Vacuum adsorption chuck, wafer bonding device and method and storage medium

Abstract

The invention provides a vacuum adsorption chuck, wafer bonding equipment, a wafer bonding method and a computer readable storage medium. And the vacuum adsorption chuck comprises an adsorption surface base driving mechanism. A plurality of sunken vacuum holes are formed in the adsorption surface and are used for forming negative pressure so as to adsorb the wafer. And the depths of the plurality of vacuum holes are gradually increased along with the increasing of the radial distances from the vacuum holes to the center of the vacuum adsorption chuck, so that the thickness of the adsorption surface at the corresponding position is reduced, and the deformation of the adsorption surface is promoted. The driving mechanism is located below the adsorption face, and upward pressure is provided for the adsorption face, so that the adsorption face deforms upwards. According to the invention, a plurality of salient points with different depths, which are adapted to the wafer bonding residual error, are arranged in the adsorption area of the chuck and are used for compensating the bonding residual error generated due to insufficient edge deformation quantity when the lower wafer and the upper wafer are bonded, so that marks after the upper wafer and the lower wafer are bonded are aligned, and the accuracy of a wafer bonding process is improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor device processing, and in particular, to a vacuum adsorption chuck, a wafer bonding device, and a computer-readable storage medium. Background Art

[0002] The wafer bonding process is used to integrate different chips in three-dimensional scale, which can reduce the power consumption and occupied space of the chips and plays an indispensable role in the semiconductor field. However, in the existing wafer bonding process, due to limitations in materials and equipment, etc., there is a problem of relatively large residual after bonding the wafers. A relatively large residual will reduce the contact area between the upper and lower copper contacts on the bonding surface, and ultimately lead to adverse factors such as chip short circuit and increased power consumption. Specifically, in the wafer bonding process, after the lower chuck of the bonding device sucks the wafer, the lower chuck bulges under the action of gas, liquid or braking device, causing the lower wafer to bend and deform. After contacting the upper wafer, it is attracted and bonded by van der Waals force and electrostatic force. However, due to the small deformation amount of the lower chuck of the bonding device, when the upper wafer has a large deformation, the compensation effect of the lower chuck is limited. At the same time, affected by other factors such as the thimble holes, the bonding device has a poor adsorption force on the edge of the lower wafer, resulting in insufficient deformation amount at the edge of the lower wafer, generating bonding residuals when bonding with the upper wafer, and further causing the marks between the upper and lower wafers to be misaligned, affecting the accuracy of the wafer bonding process.

[0003] In order to overcome the above-mentioned defects existing in the prior art, there is an urgent need in the art for an improved vacuum adsorption chuck, which is used to compensate for the bonding residuals generated due to insufficient edge deformation amount when bonding the lower wafer and the upper wafer, so as to align the marks after bonding the upper and lower wafers, and improve the accuracy of the wafer bonding process. Summary of the Invention

[0004] The following presents a brief overview of one or more aspects to provide a basic understanding of these aspects. This overview is not an exhaustive survey of all contemplated aspects, and is neither intended to identify key or decisive elements of all aspects nor to attempt to define the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to a more detailed description to follow.

[0005] In order to overcome the above-mentioned defects existing in the prior art, the present invention provides a vacuum adsorption chuck, a wafer bonding device, a wafer bonding method, and a computer-readable storage medium. By providing a plurality of bumps with different depths adapted to the wafer bonding residuals in the adsorption area of the chuck, it is used to compensate for the bonding residuals generated due to insufficient edge deformation amount when bonding the lower wafer and the upper wafer, so as to align the marks after bonding the upper and lower wafers, and improve the accuracy of the wafer bonding process.

[0006] Specifically, the above-mentioned vacuum adsorption chuck provided according to the first aspect of the present invention includes an adsorption surface and a driving mechanism. A plurality of sunken vacuum holes are provided on the adsorption surface for forming a negative pressure to adsorb the wafer. The depth of the plurality of vacuum holes increases as the radial distance from the center of the vacuum adsorption chuck increases, reducing the thickness of the adsorption surface at the corresponding position to facilitate its deformation. The driving mechanism is located below the adsorption surface and provides an upward pressure to the adsorption surface to cause it to deform upward.

[0007] Further, in some embodiments of the present invention, the driving mechanism includes a central control chamber and a pressure control device. A connection hole is provided at the edge of the hollow chamber. The pressure control device is used to fill the hollow chamber with gas or liquid to provide an upward pressure to the adsorption surface.

[0008] Further, in some embodiments of the present invention, the driving mechanism includes a piezoelectric actuator and a voltage source. The voltage source is used to supply power to the piezoelectric actuator to provide an upward pressure to the adsorption surface.

[0009] Further, in some embodiments of the present invention, the adsorption surface is divided into a plurality of adsorption zones distributed radially. Each of the adsorption zones is respectively connected to a corresponding negative pressure mechanism to form the same negative pressure.

[0010] Further, in some embodiments of the present invention, the adsorption surface is divided into three adsorption zones distributed radially. The first adsorption zone is located at the center of the adsorption surface. The second adsorption zone is located on the periphery of the first adsorption zone. The third adsorption zone is located on the periphery of the second adsorption zone and at the edge of the adsorption surface.

[0011] In addition, the above-mentioned wafer bonding equipment provided according to the second aspect of the present invention includes a first chuck, a second chuck and a thimble. The first chuck is used to adsorb the first wafer to be bonded. The second chuck selects the vacuum adsorption chuck provided according to the first aspect of the present invention and is used to adsorb the second wafer to be bonded. The thimble is used to apply pressure to the center of the first wafer so that the lower surface of the first wafer contacts the upper surface of the second wafer.

[0012] Further, in some embodiments of the present invention, a plurality of first marks are provided on the first wafer. Second marks corresponding to each of the first marks are provided on the second wafer.

[0013] In addition, the above-mentioned wafer bonding method provided according to the third aspect of the present invention includes the following steps: adsorbing a first wafer via a first chuck of a wafer bonding device provided according to the second aspect of the present invention, and adsorbing a second wafer via a second chuck. A plurality of first marks are provided on the first wafer. Second marks corresponding to each of the first marks are provided on the second wafer; and bonding the first wafer and the second wafer so that each of the first marks is aligned with each of the second marks.

[0014] Further, in some embodiments of the present invention, the step of bonding the first wafer and the second wafer so that each of the first marks is aligned with each of the second marks includes: releasing the vacuum of a first adsorption area in the inner ring of the first chuck, applying pressure to the center of the first wafer via a thimble so that the lower surface of the first wafer contacts the upper surface of the second wafer; releasing the vacuum of a first adsorption area in the inner ring of the second chuck; after a preset time, releasing the vacuum of a second adsorption area in the middle ring of the first chuck and the second chuck; starting the vacuum of the first adsorption area of the second chuck so that the inner ring of the second wafer is adsorbed on the second chuck; and releasing the vacuum of a third adsorption area in the outer ring of the first chuck and the second chuck to bond the first wafer and the second wafer so that each of the first marks is aligned with each of the second marks.

[0015] In addition, the above-mentioned computer-readable storage medium provided according to the fourth aspect of the present invention stores computer instructions, and is characterized in that when the computer instructions are executed by a processor, the wafer bonding method provided according to the third aspect of the present invention is implemented. Description of the Drawings

[0016] After reading the detailed description of the embodiments of the present disclosure in conjunction with the following drawings, the above features and advantages of the present invention can be better understood. In the drawings, the components are not necessarily drawn to scale, and components having similar relevant characteristics or features may have the same or similar reference numerals.

[0017] Figure 1 A simplified structural schematic diagram of a vacuum adsorption chuck provided according to a reference example is shown.

[0018] Figure 2 A simplified structural schematic diagram of a wafer bonding device provided according to a reference example is shown.

[0019] Figure 3 A schematic diagram of the bonding result of upper and lower wafers provided according to a reference example is shown.

[0020] Figure 4 A simplified structural schematic diagram of a wafer bonding device provided according to some embodiments of the present invention is shown.

[0021] Figure 5 Shows a schematic diagram of a first wafer and a second wafer provided according to some embodiments of the present invention.

[0022] Figure 6 Shows a schematic structural diagram of a vacuum chuck provided according to some embodiments of the present invention.

[0023] Figure 7 Shows a top view of an adsorption surface provided according to some embodiments of the present invention.

[0024] Figure 8 Shows a simplified schematic structural diagram of a vacuum chuck provided according to some embodiments of the present invention.

[0025] Figure 9 Shows a schematic flow diagram of a wafer bonding method provided according to some embodiments of the present invention.

[0026] Figure 10 Shows a schematic diagram of alignment between a first chuck and a second chuck provided according to some embodiments of the present invention.

[0027] Figure 11 Shows a schematic diagram of the first chuck adsorbing the first wafer and the second chuck adsorbing the second wafer provided according to some embodiments of the present invention.

[0028] Figure 12 Shows a schematic diagram of a thimble pressing down on the first wafer provided according to some embodiments of the present invention.

[0029] Figure 13 Shows a schematic diagram of bonding between the first wafer and the second wafer provided according to some embodiments of the present invention. Detailed implementation manners

[0030] The following specific embodiments illustrate the implementation manners of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. Although the description of the present invention will be introduced in conjunction with preferred embodiments, this does not mean that the features of this invention are limited to this implementation manner. On the contrary, the purpose of introducing the invention in conjunction with the implementation manner is to cover other alternatives or modifications that may be extended based on the claims of the present invention. In order to provide a deep understanding of the present invention, many specific details will be included in the following description. The present invention can also be implemented without these details. In addition, in order to avoid confusing or obscuring the key points of the present invention, some specific details will be omitted in the description.

[0031] In the description of the present invention, it should be noted that unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be directly connected or indirectly connected through an intermediate medium, and it can be the communication inside two components. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0032] In addition, the "upper", "lower", "left", "right", "top", "bottom", "horizontal", and "vertical" used in the following description should be understood as the orientations shown in this section and the related drawings. This relative term is only for convenience of description and does not represent that the device described needs to be manufactured or operated in a specific orientation, so it should not be understood as a limitation to the present invention.

[0033] It can be understood that although the terms "first", "second", "third", etc. can be used here to describe various components, regions, layers, and / or parts, these components, regions, layers, and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers, and / or parts. Therefore, the first component, region, layer, and / or part discussed below can be called the second component, region, layer, and / or part without departing from some embodiments of the present invention.

[0034] As described above, in the existing wafer bonding process, due to limitations in materials and equipment, etc., there is a problem of relatively large residuals in the bonded wafers. Larger residuals will reduce the contact area between the upper and lower copper contacts on the bonding surface, and ultimately adverse factors such as chip short - circuit and increased power consumption will occur.

[0035] Specifically, please refer to Figures 1 to 3 . Figure 1 shows a simplified structural schematic diagram of a vacuum chuck provided according to a reference example. Figure 2 shows a simplified structural schematic diagram of a wafer bonding device provided according to a reference example. Figure 3 shows a schematic diagram of the bonding result of upper and lower wafers provided according to a reference example.

[0036] In Figure 1 and Figure 2 In the shown embodiments, the existing vacuum chuck includes an adsorption surface and a driving device. Here, a plurality of sunken vacuum holes are provided on the adsorption surface of the vacuum chuck to form a negative pressure for adsorbing the wafer, and among them, the depths of the plurality of vacuum holes are the same.

[0037] As Figure 3As shown, in the wafer bonding process, after the lower chuck of the bonding equipment sucks the wafer, the lower chuck bulges under the action of gas, liquid or braking device, causing the lower wafer to bend and deform. After contacting the upper wafer, it is attracted and bonded by van der Waals force and electrostatic force. However, due to the small deformation amount of the lower chuck of the bonding equipment, when the upper wafer has a large deformation, the compensation effect of the lower chuck is limited. At the same time, affected by other factors such as the ejector pin holes, the bonding equipment has a poor adsorption force on the edge of the lower wafer, resulting in insufficient deformation at the edge of the lower wafer, generating bonding residuals when bonding with the upper wafer, and further causing the marks between the upper and lower wafers to be misaligned, affecting the accuracy of the wafer bonding process.

[0038] To overcome the above-mentioned defects existing in the prior art, the present invention provides a vacuum adsorption chuck, a wafer bonding equipment, a wafer bonding method and a computer-readable storage medium. By setting a plurality of bumps with different depths adapted to the wafer bonding residuals in the adsorption area of the chuck, it is used to compensate for the bonding residuals generated due to insufficient edge deformation when the lower wafer is bonded to the upper wafer, so that the marks after the upper and lower wafers are bonded are aligned, thereby improving the accuracy of the wafer bonding process.

[0039] In some non-limiting embodiments, the above-mentioned vacuum adsorption chuck provided in the first aspect of the present invention can be configured in the above-mentioned wafer bonding equipment provided in the second aspect of the present invention for implementation.

[0040] Please further refer to Figure 4 and Figure 5 . Figure 4 Fig. shows a simplified structural schematic diagram of a wafer bonding equipment provided according to some embodiments of the present invention. Figure 5 Fig. shows a schematic diagram of a first wafer and a second wafer provided according to some embodiments of the present invention.

[0041] In Figure 4 the embodiment shown, the above-mentioned wafer bonding equipment provided in the second aspect of the present invention includes a first chuck 10, a second chuck 20 and an ejector pin 30. Herein, the first chuck 10 is used to adsorb the first wafer 40 to be bonded. The second chuck 20 selects the above-mentioned vacuum adsorption chuck provided in the first aspect of the present invention and is used to adsorb the second wafer 50 to be bonded. The ejector pin 30 is used to apply pressure to the center of the first wafer 40 to make the lower surface of the first wafer 40 contact the upper surface of the second wafer 50.

[0042] Furthermore, in Figure 5 the embodiment shown, a plurality of first marks are provided on the first wafer 40, and corresponding second marks are provided on the second wafer 50.

[0043] In addition, in some non-limiting embodiments, the above-mentioned wafer bonding apparatus provided by the second aspect of the present invention includes a memory and a controller. Here, the memory includes, but is not limited to, the computer-readable storage medium provided by the aforementioned fourth aspect, on which computer instructions are stored. The controller is connected to the memory and is configured to execute the computer instructions stored on the memory to implement the wafer bonding method provided by the third aspect of the present invention.

[0044] Please further refer to Figure 6 。 Figure 6 FIG. shows a schematic structural view of a vacuum chuck provided according to some embodiments of the present invention.

[0045] In Figure 6 the embodiment shown, the above-mentioned vacuum chuck provided by the first aspect of the present invention includes an adsorption surface 21 and a driving mechanism 22. Here, a plurality of sunken vacuum holes are provided on the adsorption surface 21 for forming a negative pressure to adsorb the wafer 40. Here, the depth of the plurality of vacuum holes increases as the radial distance from the center of the vacuum chuck increases, reducing the thickness of the adsorption surface at the corresponding position to promote its deformation. The driving mechanism 22 is located below the adsorption surface 21 and provides an upward pressure to the adsorption surface 21 to cause it to deform upward.

[0046] Here, the depth range of the vacuum holes on the adsorption surface 21 is 0-2000 um. Compared with the fixed depth of 100 um, 200 um or 500 um of the vacuum holes in the vacuum chuck of the prior art, the above-mentioned vacuum chuck provided by the first aspect of the present invention, as the second chuck 20, makes the edge of the adsorption surface of the second chuck 20 relatively thinner when adsorbing the second wafer 50, enabling the entire surface and edge of the second wafer 50 to bend higher, so that the compensation unit (PPM, parts per million) can be larger, which is used to reduce the bonding residual between the first wafer 10 and the second wafer 20 during bonding.

[0047] Further, in some embodiments, the above-mentioned driving mechanism 22 includes a hollow chamber and a pressure control device. Here, a connection hole is provided at the edge of the hollow chamber. The pressure control device is used to fill the hollow chamber with gas or liquid to provide an upward pressure to the adsorption surface 21.

[0048] Alternatively, in some embodiments, the above-mentioned driving mechanism 22 includes a piezoelectric actuator (e.g., piezoelectric ceramic) and a voltage source. Here, the voltage source is used to supply power to the piezoelectric actuator to provide an upward pressure to the adsorption surface 21.

[0049] Please further refer to in combination Figure 7 and Figure 8 。 Figure 7 FIG. shows a top view of the adsorption surface provided according to some embodiments of the present invention.Figure 8 The figure shows a simplified structural schematic diagram of a vacuum adsorption chuck provided according to some embodiments of the present invention.

[0050] Furthermore, in Figure 7 and Figure 8 in the illustrated embodiment, the adsorption surface 21 is divided into a plurality of adsorption zones distributed radially. Here, each adsorption zone is respectively connected to a corresponding negative pressure mechanism to form the same negative pressure.

[0051] As Figure 7 shown, the above-mentioned adsorption surface 21 is divided into three adsorption zones distributed radially. Here, the first adsorption zone 211 is located at the center of the adsorption surface 21, the second adsorption zone 212 is located on the periphery of the first adsorption zone 211, and the third adsorption zone 213 is located on the periphery of the second adsorption zone 212 and at the edge of the adsorption surface 21.

[0052] Here, the radius range of the first adsorption zone 211 is 1 - 100 mm. The radius range of the second adsorption zone 212 is 10 - 148 mm. The radius range of the third adsorption zone 213 is 30 - 150 mm. The total radius of the adsorption surface 21 is 150 mm.

[0053] Those skilled in the art can understand that Figure 7 the embodiment in which the shown adsorption surface is divided into three adsorption zones distributed radially is only some non-restrictive implementation manners provided by the present invention, aiming to clearly show the main concept of the present invention and provide some specific solutions convenient for the public to implement, rather than being used to limit the protection scope of the present invention.

[0054] Optionally, in some other embodiments, those skilled in the art can also set different forms and numbers of adsorption zone divisions according to actual process requirements, and the specific radius range can also be set according to different wafers to be processed.

[0055] Furthermore, the above-mentioned adsorption zones are independently controlled, and the vacuum degree range therein is 0 to -800 mbar. The vacuum degree in each adsorption zone can be changed individually, used to control different pressures on the wafers adsorbed in different regions, which helps to control the change of the bonding residual when the wafer bonding interface reaches each position of the lower chuck during the wafer bonding process.

[0056] In this way, the above-mentioned vacuum adsorption chuck provided by the first aspect of the present invention can perform independent adsorption control on the surface of the wafer to be processed through a plurality of adsorption zones, thereby reducing the diffusion of the top needle pressure in the middle region to the edge of the wafer and avoiding its influence on the bonding residual when bonding the upper and lower wafers.

[0057] In addition, in some optional embodiments, a sealing ring is further included outside the above-mentioned vacuum chuck. Here, the height range of the sealing ring is 0 to 1000 um.

[0058] The working principle of the above-mentioned wafer bonding device will be described below in conjunction with some embodiments of the wafer bonding method. Those skilled in the art can understand that these embodiments of the wafer bonding method are only some non-limiting implementation manners provided by the present invention, aiming to clearly show the main concept of the present invention and provide some specific solutions convenient for the public to implement, rather than limiting all functions or all working manners of the wafer bonding device. Similarly, the wafer bonding device is also a non-limiting implementation manner provided by the present invention, and does not limit the execution subject and execution order of each step in these wafer bonding methods.

[0059] Please refer to Figure 5 and Figures 9 to 13 . Figure 9 FIG. shows a schematic flow chart of a wafer bonding method provided according to some embodiments of the present invention. Figure 10 FIG. shows a schematic diagram of the alignment of the first chuck and the second chuck provided according to some embodiments of the present invention. Figure 11 FIG. shows a schematic diagram of the first chuck adsorbing the first wafer and the second chuck adsorbing the second wafer provided according to some embodiments of the present invention. Figure 12 FIG. shows a schematic diagram of the ejector pin pressing down the first wafer provided according to some embodiments of the present invention. Figure 13 FIG. shows a schematic diagram of the bonding of the first wafer and the second wafer provided according to some embodiments of the present invention.

[0060] As Figure 10 shown, before bonding the first wafer 40 and the second wafer 50, a technician can first align the first chuck 10 and the second chuck 20 of the wafer bonding device provided in the second aspect of the present invention.

[0061] After that, as Figure 9 and Figure 11 shown, a technician can first adsorb the first wafer 40 via the first chuck 10 of the wafer bonding device provided in the second aspect of the present invention, and adsorb the second wafer 50 via the second chuck 20. Here, a plurality of first marks are provided on the first wafer 40, and second marks corresponding to each first mark are provided on the second wafer 50.

[0062] After that, as Figure 12 and Figure 13 shown, a technician can bond the first wafer 40 and the second wafer 50 so that each first mark is aligned with each second mark.

[0063] Specifically, during the bonding process of the first wafer 40 and the second wafer 50, the technician can first release the vacuum in the first adsorption area of the inner ring of the first chuck 10, and apply pressure to the center of the first wafer 40 via the ejector pin 30, so that the lower surface of the first wafer 40 contacts the upper surface of the second wafer 50.

[0064] After that, the technician can release the vacuum in the first adsorption area of the inner ring of the second chuck 20.

[0065] After that again, after a preset time, the technician can release the vacuum in the second adsorption area of the middle ring of the first chuck 10 and the second chuck 20.

[0066] After that again, the technician can activate the vacuum in the first adsorption area of the second chuck 20 to adsorb the inner ring of the second wafer on the second chuck.

[0067] After that again, the technician can release the vacuum in the third adsorption area of the outer rings of the first chuck 10 and the second chuck 20 to bond the first wafer 40 and the second wafer 50, and align each first mark with each second mark.

[0068] In this way, by selecting the above-mentioned vacuum adsorption chuck provided in the first aspect of the present invention as the second chuck 20, when the second chuck 20 adsorbs the second wafer 50, the edge of its adsorption surface is relatively thinner, enabling the entire surface and edge of the second wafer 50 to bend higher, so that the compensation unit (PPM, parts per million) can be larger, which is used to reduce the bonding residual between the first wafer 10 and the second wafer 20 during bonding.

[0069] In summary, the above-mentioned vacuum adsorption chuck, wafer bonding equipment, wafer bonding method, and computer-readable storage medium provided by the present invention can all set a plurality of bumps with different depths adapted to the wafer bonding residual in the adsorption area of the chuck, which are used to compensate for the bonding residual generated due to insufficient edge deformation during the bonding of the lower wafer and the upper wafer, so as to align the marks after the upper and lower wafers are bonded, thereby improving the accuracy of the wafer bonding process.

[0070] Although the above methods are illustrated and described as a series of actions to simplify the explanation, it should be understood and appreciated that these methods are not limited by the order of the actions, because according to one or more embodiments, some actions may occur in a different order and / or occur concurrently with other actions that are illustrated and described in this document or not illustrated and described in this document but can be understood by those skilled in the art.

[0071] The steps of a method or algorithm described in connection with the embodiments disclosed in this specification can be embodied directly in hardware, in a software module executed by a processor, or in a combination of the two. A software module may reside in RAM memory, flash memory, ROM memory, EPROM memory, EEPROM memory, registers, a hard disk, a removable disk, a CD-ROM, or any other form of storage medium known in the art. An exemplary storage medium is coupled to the processor such that the processor can read information from, and write information to, the storage medium. In an alternative, the storage medium may be integrated into the processor. The processor and the storage medium may reside in an ASIC. The ASIC may reside in a user terminal. In an alternative, the processor and the storage medium may reside as discrete components in a user terminal.

[0072] In one or more exemplary embodiments, the described functionality may be implemented in hardware, software, firmware, or any combination thereof. If implemented in software as a computer program product, the functions may be stored on or transmitted via a computer-readable medium as one or more instructions or code. The computer-readable medium includes both a computer storage medium and a communication medium including any medium that facilitates transfer of a computer program from one place to another. A storage medium may be any available medium that can be accessed by a computer. By way of example and not limitation, such a computer-readable medium may comprise RAM, ROM, EEPROM, CD-ROM or other optical disk storage, magnetic disk storage or other magnetic storage devices, or any other medium that can be used to carry or store desired program code in the form of instructions or data structures and that can be accessed by a computer. Any connection is properly termed a computer-readable medium. For example, if the software is transmitted from a web site, server, or other remote source using a coaxial cable, fiber optic cable, twisted pair, DSL, or wireless technologies such as infrared, radio, and microwave, then the coaxial cable, fiber optic cable, twisted pair, DSL, or wireless technologies such as infrared, radio, and microwave are included in the definition of medium. As used herein, disk and disc include compact disc (CD), laser disc, optical disc, digital versatile disc (DVD), floppy disk, and Blu-ray disc where disks usually reproduce data magnetically, while discs reproduce data optically with lasers. Combinations of the above should also be included within the scope of computer-readable medium.

[0073] The foregoing description of the disclosure is provided to enable any person skilled in the art to make or use the disclosure. Various modifications to the disclosure will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other variations without departing from the spirit or scope of the disclosure. Thus, the disclosure is not intended to be limited to the examples and designs described herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A vacuum adsorption chuck, characterized in that, Comprising: An adsorption surface, on which a plurality of sunken vacuum holes are provided for forming a negative pressure to adsorb the wafer. Among them, the depth of the plurality of vacuum holes increases with the increase of the radial distance from the center of the vacuum chuck, reducing the thickness of the adsorption surface at the corresponding position to promote its deformation; And A driving mechanism, located under the adsorption surface, providing an upward pressure to the adsorption surface to cause it to deform upward.

2. The vacuum adsorption chuck according to claim 1, characterized in that, The driving mechanism includes: A hollow chamber, with connection holes provided at its edge; and A pressure control device for filling the hollow chamber with gas or liquid to provide an upward pressure to the adsorption surface.

3. The vacuum adsorption chuck according to claim 1, wherein The driving mechanism includes: A piezoelectric actuating device; and A voltage source for supplying power to the piezoelectric actuating device to provide an upward pressure to the adsorption surface.

4. The vacuum adsorption chuck according to claim 1, characterized in that, The adsorption surface is divided into a plurality of adsorption zones distributed radially. Among them, each adsorption zone is respectively connected to a corresponding negative pressure mechanism to form the same negative pressure.

5. The vacuum adsorption chuck according to claim 4, wherein The adsorption surface is divided into three adsorption zones distributed radially. Among them, the first adsorption zone is located at the center of the adsorption surface, the second adsorption zone is located outside the first adsorption zone, and the third adsorption zone is located outside the second adsorption zone and at the edge of the adsorption surface.

6. A wafer bonding device, characterized in that, Comprising: A first chuck for adsorbing a first wafer to be bonded; A second chuck, which is a vacuum chuck as described in any one of claims 1 to 5, for adsorbing a second wafer to be bonded; And A thimble for applying pressure to the center of the first wafer to make the lower surface of the first wafer contact the upper surface of the second wafer.

7. The wafer bonding device according to claim 6, wherein A plurality of first marks are provided on the first wafer, and corresponding second marks are provided on the second wafer.

8. A wafer bonding method, characterized in that, Including the following steps: Adsorbing the first wafer via the first chuck of the wafer bonding device as described in claim 6 or 7, and adsorbing the second wafer via the second chuck. Among them, a plurality of first marks are provided on the first wafer, and corresponding second marks are provided on the second wafer; And Bonding the first wafer and the second wafer to align each first mark with each second mark.

9. The wafer bonding method according to claim 8, wherein, The step of bonding the first wafer and the second wafer to align each first mark with each second mark includes: Releasing the vacuum of the first adsorption zone in the inner ring of the first chuck, and applying pressure to the center of the first wafer via the thimble to make the lower surface of the first wafer contact the upper surface of the second wafer; Releasing the vacuum of the first adsorption zone in the inner ring of the second chuck; After a preset time, releasing the vacuum of the second adsorption zone in the middle ring of the first chuck and the second chuck; Starting the vacuum of the first adsorption zone of the second chuck to adsorb the inner ring of the second wafer on the second chuck; and Releasing the vacuum of the third adsorption zones in the outer rings of the first chuck and the second chuck to bond the first wafer and the second wafer to align each first mark with each second mark.

10. A computer-readable storage medium having computer instructions stored thereon, characterized in that, When the computer instructions are executed by a processor, implementing the wafer bonding method as described in claim 8 or 9.

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