Silicon wafer processing method and device

Abstract

The invention relates to a silicon wafer processing method and device. In one aspect, a silicon wafer processing method is provided for use in double-sided polishing of a silicon wafer, and the method comprises the following steps: in the double-sided polishing process, monitoring the pressure applied to the silicon wafer and the rotating speed of a polishing pad for polishing the silicon wafer in real time; classifying the pressure into one of a plurality of preset pressure ranges, and classifying the rotational speed into one of a plurality of preset speed ranges; and according to the classified pressure range and the classified speed range, a polishing solution of a corresponding formula is provided in double-sided polishing. Therefore, the polishing quality of the silicon wafer can still be kept at a better level under the condition that the pressure and the rotating speed fluctuate and change.

Description

Technical Field

[0001] The present disclosure relates to the field of semiconductor processing technologies, and in particular, to a method and apparatus for silicon wafer processing. Background Art

[0002] The double-sided polishing process of silicon wafers is a crucial step in semiconductor manufacturing. Its purpose is to remove minute unevenness and impurities on the surface of the silicon wafer through physical and chemical actions, thereby obtaining a highly flat, smooth, and clean surface, providing a good foundation for subsequent microelectronic device manufacturing. In this process, a double-sided polishing device is usually used. Through the relative movement between the polishing pad and the silicon wafer, combined with the action of the polishing liquid, fine processing of the silicon wafer surface is achieved. The polishing liquid plays a key role in this process. It can not only provide abrasives for physical grinding but also remove impurities such as surface oxide layers through chemical reactions. At the same time, it affects conditions such as temperature and pressure during the polishing process, thereby affecting the polishing effect.

[0003] In the existing double-sided polishing process of silicon wafers, to ensure the polishing quality, polishing operations are usually carried out within a certain range of operating speeds and pressures, and corresponding polishing liquid formulations are selected. For example, when the operating speed and pressure are within a certain preset appropriate range, a specific polishing liquid formulation is selected, in which parameters such as abrasive grain size, chemical composition, and pH value are optimized to achieve effective polishing of the silicon wafer surface under this operating condition, enabling the flatness and particle level of the silicon wafer to reach certain standards.

[0004] However, in the actual production process, even when the operating speed and pressure are within the normal range, it is difficult to avoid certain fluctuations and changes. These fluctuations may cause changes in the interaction between the polishing liquid and the silicon wafer, thereby adversely affecting the polishing effect. Specifically, when the operating speed or pressure is too large or too small, characteristics such as the abrasive distribution, chemical composition, and pH value in the polishing liquid may not be effectively controlled, and thus may not be able to adapt to the changed polishing conditions. In this case, even if the polishing liquid formulation remains unchanged, key indicators such as the flatness and particle level of the silicon wafer will deteriorate. For example, excessive pressure may cause scratches or depressions on the silicon wafer surface, while too little pressure may reduce the polishing efficiency and fail to effectively remove surface impurities, thereby affecting the overall quality of the silicon wafer. In addition, changes in speed will also affect the flow and distribution of the polishing liquid, further exacerbating the instability of the silicon wafer surface quality. Therefore, the existing treatment methods are difficult to always maintain a good polishing effect in the face of fluctuations in operating conditions and have certain limitations. Summary of the Invention

[0005] This section provides an overall summary of the present disclosure, rather than a full disclosure of the entire scope or all features of the present disclosure.

[0006] The object of the present disclosure is to provide a method and an apparatus capable of maintaining a relatively excellent level of the polishing quality of a silicon wafer even when fluctuations and changes occur in the pressure and the rotational speed.

[0007] To achieve the above object, according to a first aspect of the present disclosure, there is provided a method for processing a silicon wafer for use in double-sided polishing of the silicon wafer, which includes: During the double-sided polishing process, the pressure applied to the silicon wafer and the rotational speed of a polishing pad for polishing the silicon wafer are monitored in real time; The pressure is classified into one of a plurality of preset pressure ranges, and the rotational speed is classified into one of a plurality of preset speed ranges; According to the classified pressure range and the classified speed range, a polishing liquid with a corresponding formulation is provided in the double-sided polishing.

[0008] In some embodiments, the plurality of pressure ranges are divided from a total pressure range of 800 daN to 1700 daN, and the plurality of speed ranges are divided from a total speed range of 20 rpm to 40 rpm.

[0009] In some embodiments, the plurality of pressure ranges divided from the total pressure range are: 800 daN to 1000 daN, 1000 daN to 1400 daN, and 1400 daN to 1700 daN, and the plurality of speed ranges divided from the total speed range are: 20 rpm to 25 rpm, 25 rpm to 35 rpm, and 35 rpm to 40 rpm.

[0010] In some embodiments, the polishing liquid is composed of an abrasive, an oxidant, a dispersant, a surfactant, a complexing agent, and water.

[0011] In some embodiments, the formulation of the polishing liquid includes: the particle size of the abrasive, the mass percentage of the abrasive, the mass percentage of the oxidant, the mass percentage of the dispersant, the mass percentage of the surfactant, the mass percentage of the complexing agent, and the pH value of the polishing liquid.

[0012] In some embodiments, the abrasive is SiO2, the oxidant is H2O2, the dispersant is sodium polyacrylate, the surfactant is fatty alcohol polyoxyethylene ether, and the complexing agent is ethylenediaminetetraacetic acid.

[0013] In some embodiments, the providing a polishing liquid with a corresponding formulation in the double-sided polishing according to the classified pressure range and the classified speed range includes: Determine the required content of each component in the polishing liquid according to the classified pressure range and the classified speed range, and configure the polishing liquid according to the content.

[0014] In some embodiments, the polishing liquid with a corresponding formula provided in the double-sided polishing according to the classified pressure range and the classified speed range includes: When the pressure is within the classified pressure range and the duration for which the rotational speed is within the classified pressure range is greater than or equal to a predetermined duration, provide the polishing liquid in the double-sided polishing.

[0015] According to another aspect of the present disclosure, there is also provided a silicon wafer processing apparatus for use in the double-sided polishing of the silicon wafer, which includes: A monitoring unit for real-time monitoring of the pressure applied to the silicon wafer and the rotational speed of the polishing pad for polishing the silicon wafer during the double-sided polishing process; A classification unit for classifying the pressure into one of a plurality of preset pressure ranges and classifying the rotational speed into one of a plurality of preset speed ranges; A supply unit for providing a polishing liquid with a corresponding formula in the double-sided polishing according to the classified pressure range and the classified speed range.

[0016] In some embodiments, the silicon wafer processing apparatus further includes: A determination unit for determining the required content of each component in the polishing liquid according to the classified pressure range and the classified speed range; A configuration unit for configuring the polishing liquid according to the content.

[0017] According to the above embodiments, by real-time monitoring of the pressure and the rotational speed and dynamically adjusting the formula of the polishing liquid according to the monitoring results, it is possible to ensure that during the entire polishing process, the characteristics of the polishing liquid always match the current operating conditions, which enables the flatness and particle level of the silicon wafer to remain at a relatively good level even when the pressure and the rotational speed fluctuate and change, significantly improving the stability of the polishing quality. Description of the Drawings

[0018] Through the following description with reference to the drawings, the features and advantages of the embodiments of the present disclosure will become more readily understandable. The drawings are not drawn to scale, and some features may be enlarged or reduced to show details of specific parts.

[0019] Figure 1 A schematic diagram for double-sided polishing processing of a silicon wafer.

[0020] Figure 2 A flowchart of a silicon wafer processing method according to an embodiment of the present disclosure.

[0021] Figure 3 A schematic diagram of the components of a silicon wafer processing apparatus according to an embodiment of the present disclosure.

[0022] In the drawings, the same or corresponding technical features, parts or components are denoted by the same or corresponding reference numerals. Detailed Embodiments

[0023] The present disclosure will be described in detail below with reference to the drawings and by means of exemplary embodiments. It should be noted that the following detailed description of the present disclosure is for illustrative purposes only and is in no way a limitation on the present disclosure.

[0024] It should be noted that, for the sake of clarity, not all features of a specific embodiment are described and illustrated in the specification and the drawings, and, in order to avoid unnecessary details obscuring the technical solutions of interest in the present disclosure, only the device structures and parts closely related to the technical solutions of the present disclosure are described and illustrated in the specification and the drawings, while other details that are not closely related to the technical content of the present disclosure and are known to those skilled in the art are omitted.

[0025] In the field of semiconductor manufacturing, the silicon wafer double-sided polishing process is crucial for ensuring the high quality of the silicon wafer surface. This process uses physical and chemical actions, the relative movement between the polishing pad and the silicon wafer, and the synergistic effect of the polishing liquid to remove the minute unevenness and impurities on the silicon wafer surface to achieve a highly flat, smooth and clean surface. However, the prior art faces many challenges in practical applications. Although it is common practice to select a suitable polishing liquid formulation within a preset operating speed and pressure range, in the actual production process, fluctuations in operating conditions, such as unstable speed and pressure, often lead to a decline in the polishing effect. Such fluctuations make the characteristics of the polishing liquid, such as abrasive distribution, chemical composition and pH value, unable to adapt to the changed polishing conditions, thereby affecting the flatness and particle level of the silicon wafer and reducing the overall quality of the product.

[0026] In view of this limitation of the prior art, the present disclosure proposes an innovative silicon wafer processing method, which will be described in detail below.

[0027] See Figure 1 and Figure 2 , embodiments of the present disclosure provide a silicon wafer W processing method for use in the double-sided polishing of a silicon wafer W, and the method may include the following steps S101, S102 and S103.

[0028] Step S101: During the double-sided polishing process, the pressure applied to the silicon wafer W and the rotation speed of the polishing pad 2 for polishing the silicon wafer W are monitored in real time. Figure 1 As shown in FIG. 1 , the pressure applied to the silicon wafer W is schematically shown by multiple arrows on the upper and lower sides of the silicon wafer W, and the rotation of the polishing pad 2 for polishing the silicon wafer W is schematically shown by the axis X and the elliptical arrows around the axis X. In addition, the “rotation speed of the polishing pad 2” here refers to the speed in a reference system that remains stationary relative to the silicon wafer W, or in other words, refers to the relative speed between the polishing pad 2 and the silicon wafer W. In addition, Figure 1 The polishing pad 2 rotates around the axis X for exemplary purposes only, and the present disclosure is not limited thereto. For example, the polishing pad 2 may also rotate around another axis.

[0029] Step S102: classifying the pressure into one of a plurality of preset pressure ranges, and classifying the rotation speed into one of a plurality of preset speed ranges.

[0030] Step S103: According to the pressure range classified in and the speed range classified in, a polishing liquid S with a corresponding formula is provided in the double-sided polishing, such as Figure 1 In addition, Figure 1 It is exemplarily shown that the polishing liquid S is provided to the polishing pad 2 above the silicon wafer W through a pipe. In this case, the micropores of the polishing pad 2 can absorb and store a certain amount of polishing liquid S. When the silicon wafer W is tightly attached to the polishing pad 2 and starts to move relative to it, the polishing liquid S in the polishing pad 2 will be gradually released from the micropores under the action of pressure and friction, and fill the gap between the polishing pad 2 and the silicon wafer W.

[0031] The present disclosure monitors the pressure and rotation speed in real time and dynamically adjusts the formula of the polishing liquid S according to the monitoring results, thereby ensuring that the characteristics of the polishing liquid S (such as abrasive particle size, chemical composition, pH value, etc.) always match the current operating conditions during the entire polishing process. This allows the flatness and particle level of the silicon wafer W to remain at an optimal level even when the pressure and rotation speed fluctuate and change, thereby significantly improving the stability of the polishing quality.

[0032] For example, when the pressure or rotation speed is too high, the traditional polishing liquid formula may cause scratches or depressions on the surface of the silicon wafer W. The present disclosure can effectively reduce the occurrence of these surface defects by timely adjusting the formula of the polishing liquid S when the pressure and rotation speed fluctuate. For example, when it is monitored that the pressure enters an excessively large pressure range, the formula adjustment of the polishing liquid S may be performed to increase the particle size distribution range of the abrasive and the buffering capacity of the chemical composition, so as to maintain a good polishing effect under high pressure and avoid scratches or depressions on the surface of the silicon wafer W.

[0033] For example, when the pressure or rotational speed is too low, the traditional polishing fluid formula may result in a decrease in polishing efficiency and fail to effectively remove impurities on the surface of the silicon wafer W. By dynamically adjusting the formula of the polishing fluid S, the present disclosure can optimize the chemical reaction and physical grinding effect of the polishing fluid at low pressure or low rotational speed, thereby improving the polishing efficiency. For example, when it is monitored that the rotational speed enters a too-low speed range, a formula adjustment may be performed on the polishing fluid S to increase the contents of the oxidant and the surfactant, so as to still maintain a high polishing effect at a low speed and ensure that the impurities on the surface of the silicon wafer W are effectively removed.

[0034] In some embodiments of the present disclosure, the plurality of pressure ranges are divided from the total pressure range of 800 daN to 1700 daN, and the plurality of speed ranges are divided from the total speed range of 20 rpm to 40 rpm.

[0035] When the total pressure range is from 800 daN to 1700 daN and the total speed range is from 20 rpm to 40 rpm, the common operating conditions in the double-sided polishing process are covered. This means that in the general double-sided polishing process, regardless of how the pressure and speed change, they will be within these ranges, and thus the corresponding formula of the polishing fluid S can be found. This wide applicability ensures that the present method can operate stably in a variety of different production environments and adapt to the processing requirements of different batches of silicon wafers W.

[0036] In some embodiments of the present disclosure, the multiple ranges divided from the total pressure range may be: 800 daN to 1000 daN, 1000 daN to 1400 daN, and 1400 daN to 1700 daN, and the multiple ranges divided from the total speed range may be: 20 rpm to 25 rpm, 25 rpm to 35 rpm, and 35 rpm to 40 rpm.

[0037] The present disclosure subdivides the total pressure range (800 daN to 1700 daN) into three sub-ranges: 800 daN to 1000 daN, 1000 daN to 1400 daN, and 1400 daN to 1700 daN. Similarly, the total speed range (20 rpm to 40 rpm) is subdivided into three sub-ranges: 20 rpm to 25 rpm, 25 rpm to 35 rpm, and 35 rpm to 40 rpm. This way of division not only avoids changing the formula of the polishing liquid S too frequently, reducing the complexity and cost of operations, but also ensures that the polishing quality of the silicon wafer W can be maintained at a high level within each sub-range, avoiding the decline in polishing quality caused by too large a range. Specifically, the polishing liquid formula within each sub-range is relatively stable, making it easier to manage and adjust the supply of the polishing liquid S and ensuring the continuity and stability of the production process. On the other hand, the polishing liquid formula within each sub-range is carefully designed to effectively cope with the pressure and speed changes within that range. For example, within the pressure range of 1000 daN to 1400 daN, the polishing liquid formula can optimize, such as the particle size distribution and chemical composition of the abrasive, to ensure good flatness and particle level under medium pressure.

[0038] In some embodiments of the present disclosure, the polishing liquid S may be composed of an abrasive, an oxidant, a dispersant, a surfactant, a complexing agent, and water.

[0039] During the double-sided polishing process, the abrasive can play a physical grinding role. By contacting and rubbing against the surface of the silicon wafer W, the abrasive can remove the minute irregularities on the surface, making the surface of the silicon wafer W smoother. Abrasives with different particle sizes can adapt to different polishing requirements. For example, coarser abrasives are suitable for initially removing larger irregularities, while finer abrasives are used for fine polishing to improve the surface finish. The oxidant can remove the oxide layer and other impurities on the surface of the silicon wafer W through chemical reactions during the polishing process. These chemical reactions can soften the surface material, making it easier to be removed by the abrasive, and at the same time prevent the surface from re-oxidizing, maintaining the cleanliness and activity of the surface. The dispersant can ensure the uniform distribution of the abrasive in the polishing liquid S, preventing the aggregation of abrasive particles. The uniformly distributed abrasive can contact the surface of the silicon wafer W more effectively, improving the uniformity and consistency of the polishing effect. The surfactant can reduce the surface tension of the polishing liquid S, making it easier to spread on the surface of the silicon wafer W and increasing the contact area between the polishing liquid S and the surface of the silicon wafer W. The complexing agent can form stable complexes with metal ions in the polishing liquid S, preventing the precipitation and precipitation of metal ions. Water, as the main solvent of the polishing liquid S, can dissolve and disperse the above various components to form a uniform solution.

[0040] In some embodiments of the present disclosure, the formulation of the polishing liquid S may include: the particle size of the abrasive, the mass percentage of the abrasive, the mass percentage of the oxidant, the mass percentage of the dispersant, the mass percentage of the surfactant, the mass percentage of the complexing agent, and the pH value of the polishing liquid S. Here, it should be described what effects these parameters have.

[0041] The particle size of the abrasive directly affects the flatness of the silicon wafer surface. Coarser abrasive particle sizes are suitable for initially removing larger surface irregularities, capable of quickly reducing surface roughness, but may produce deeper scratches under high pressure or high rotational speeds. Finer abrasive particle sizes are suitable for fine polishing, capable of improving surface finish and reducing scratches, but the polishing speed is relatively slow. The mass percentage of the abrasive determines the concentration of the abrasive in the polishing liquid. A higher mass percentage of the abrasive can improve the polishing efficiency and quickly remove surface material, but may increase the risk of surface scratches. A lower mass percentage of the abrasive can reduce scratches and improve surface quality, but the polishing speed is slow. The mass percentage of the oxidant affects the chemical reaction activity of the polishing liquid. A higher mass percentage of the oxidant can enhance the chemical reaction, effectively remove the oxide layer and other impurities on the silicon wafer surface, and improve surface cleanliness. However, too high an oxidant concentration may corrode the silicon wafer surface. The mass percentage of the dispersant affects the uniform distribution of the abrasive in the polishing liquid. A higher mass percentage of the dispersant can prevent abrasive particles from aggregating, ensure the uniformity and stability of the polishing liquid, and reduce surface defects. However, too high a dispersant concentration may increase the viscosity of the polishing liquid and affect its fluidity. The mass percentage of the surfactant affects the surface tension and wettability of the polishing liquid. A higher mass percentage of the surfactant can reduce the surface tension of the polishing liquid, making it easier to spread on the silicon wafer surface, increasing the contact area between the polishing liquid and the silicon wafer surface, and reducing the generation of bubbles. However, too high a surfactant concentration may form excessive foam on the silicon wafer surface and affect the polishing effect. The mass percentage of the complexing agent affects the chemical stability of the polishing liquid. A higher mass percentage of the complexing agent can form stable complexes with metal ions in the polishing liquid, prevent the precipitation and precipitation of metal ions, and extend the service life of the polishing liquid. However, too high a complexing agent concentration may affect the pH value of the polishing liquid and affect the balance of chemical reactions. The pH value of the polishing liquid S affects the activity and balance of chemical reactions. An appropriate pH value can improve the activity of the oxidant, enhance the effect of chemical reactions, and reduce the corrosion of the silicon wafer surface at the same time.

[0042] In some embodiments of the present disclosure, the abrasive can be SiO2, the oxidant can be H2O2, the dispersant can be sodium polyacrylate, the surfactant can be fatty alcohol polyoxyethylene ether, and the complexing agent can be ethylenediaminetetraacetic acid.

[0043] The SiO2 abrasive has a uniform particle size distribution, which can ensure uniform grinding during the polishing process. This helps to reduce scratches and unevenness on the surface of the silicon wafer and improve flatness. As a strong oxidant, H2O2 can effectively remove the oxide layer and other impurities on the surface of the silicon wafer. It softens the surface material through chemical reactions, making it easier to be removed by the abrasive. At the same time, it can also prevent the surface from re-oxidizing and keep the surface clean and active. Sodium polyacrylate can effectively disperse the abrasive particles, prevent particle aggregation, and ensure the uniformity and stability of the polishing liquid. This helps to improve the uniformity and consistency of the polishing effect and reduce surface defects. Fatty alcohol polyoxyethylene ether can significantly reduce the surface tension of the polishing liquid, making it easier to spread on the surface of the silicon wafer and increasing the contact area between the polishing liquid and the silicon wafer surface. This not only improves the polishing efficiency but also ensures that the active ingredients in the polishing liquid act more uniformly on the silicon wafer surface. Ethylenediaminetetraacetic acid can form stable complexes with metal ions in the polishing liquid to prevent the precipitation and precipitation of metal ions. This not only improves the chemical stability of the polishing liquid but also ensures the effectiveness of the oxidant and other chemical components and extends the service life of the polishing liquid.

[0044] In some embodiments of the present disclosure, according to the classified pressure range and the classified speed range, the polishing liquid S with a corresponding formula provided in the double-sided polishing may include: determining the required content of each component in the polishing liquid S according to the classified pressure range and the classified speed range, and configuring the polishing liquid S according to the determined content.

[0045] Existing regulation of polishing liquid formulas usually only focuses on a single characteristic parameter, such as the particle size of the abrasive. This single-parameter regulation method often fails to obtain good flatness and particle level of the silicon wafer W in the face of complex polishing conditions. The present disclosure determines the content of each component, that is, by comprehensively regulating the multi-scale characteristic parameters of the polishing liquid S, including the particle size of the abrasive, the mass percentage of the abrasive, the mass percentage of the oxidant, the mass percentage of the dispersant, the mass percentage of the surfactant, the mass percentage of the complexing agent, and the pH value of the polishing liquid S, the performance of the polishing liquid can be more comprehensively optimized to adapt to different polishing conditions. By precisely controlling the multi-scale characteristics of the polishing liquid S, good polishing effects can be maintained within different pressure and rotational speed ranges.

[0046] For determining the required content of each component in the polishing liquid S, the formula corresponding to the monitored pressure and rotational speed can be queried by looking up a table, or a model can be used to output the formula corresponding to the monitored pressure and rotational speed.

[0047] Taking looking up a table as an example, Table 1 below is a correspondence table between the polishing liquid formula and operating conditions:

[0048] Table 1 In Table 1, the operating conditions include the pressure range and the rotational speed range. For the pressure range, it is divided into three sub-ranges: "excessive pressure", "appropriate pressure", and "insufficient pressure", with specific values of 800 - 1000 daN, 1000 - 1400 daN, and 1400 - 1700 daN respectively. For the rotational speed range, it is divided into three sub-ranges: "excessive speed", "appropriate speed", and "insufficient speed", with specific values of 20 - 25 rpm, 25 - 35 rpm, and 35 - 40 rpm respectively. The polishing liquid formula includes the abrasive particle size, the mass percentage of the abrasive, the mass percentage of the oxidant, the mass percentage of the dispersant, the mass percentage of the surfactant, the mass percentage of the complexing agent, and the pH value, and the remaining component is water.

[0049] The numbers 1 - 27 in Table 1 respectively correspond to the polishing liquid formulas under different pressure and rotational speed ranges. And the following polishing effect evaluation table, that is, the numbers 1 - 27 in Table 2, shows the specific evaluation results of the surface roughness, flatness, particle level, and surface quality level obtained by the corresponding formulas during the actual polishing process, thus intuitively reflecting the influence of different formulas on the polishing effect:

[0050] Table 2 Combining Table 1 and Table 2, the corresponding polishing liquid formulas under different pressure and rotational speed ranges can be selected to achieve the best polishing effect. For example, for the pressure and rotational speed ranges corresponding to numbers 1 to 3 in Table 1, referring to the evaluation results in Table 2, it can be found that the polishing effect of number 1 is the best. Therefore, the polishing liquid formula corresponding to number 1 in Table 1 can be selected to ensure the optimal polishing quality under this operating condition.

[0051] Taking the model output as an example, a model for predicting the polishing liquid formula based on pressure and rotational speed can be trained through a large amount of historical data. This model comprehensively considers the input pressure and rotational speed, and based on the correlation rules between different conditions, formulas, and polishing effects in historical data, it obtains the recommended content range of each component under the current operating conditions to achieve the best polishing effect, such as improving the surface finish and reducing particle contamination. By using this formula, the polishing process can be better adapted to the current operating parameters, thereby improving the polishing quality and production efficiency.

[0052] The above-mentioned table can be obtained by accumulating process data. During the polishing process, sensors are used to monitor the pressure and rotational speed in real time, and the corresponding polishing fluid formulation parameters and polishing effect evaluation data are recorded. Through steps such as data classification, correlation analysis, and trend analysis, the range of formulation parameters corresponding to the best polishing effect under different operating conditions is determined, and a table is constructed accordingly and filled with the corresponding data. Additionally, on the one hand, new data can be continuously accumulated to update the table and supplement new information, and on the other hand, the data can be corrected through experimental verification, the formulation can be optimized, and detailed information can be added to make it more comprehensive and accurate for guiding production.

[0053] For the above-mentioned model, for example, historical data can be collected and preprocessed first. According to the characteristics of the data, a suitable model algorithm is selected, the model is trained with the training set, and the performance of the model is verified and evaluated through methods such as evaluation with the test set and cross-validation to determine the optimal model. Additionally, the model can be updated through incremental learning and the hyperparameters can be tuned. Different models can also be fused and new features can be introduced to improve the prediction ability and practicality of the model, enabling it to better adapt to production requirements.

[0054] In some embodiments of the present disclosure, according to the classified pressure range and the classified speed range, the polishing fluid S with a corresponding formulation provided in double-sided polishing may include: when the duration during which the pressure is within the classified pressure range and the rotational speed is within the classified pressure range is greater than or equal to a predetermined duration, the polishing fluid S with a corresponding formulation is provided in double-sided polishing.

[0055] The present disclosure sets a predetermined duration. Only when the duration of the pressure and rotational speed is greater than or equal to the predetermined duration is the polishing fluid formulation adjusted. This reduces the frequency of formulation adjustment, lowers the complexity and cost of operation. Since there is no need to adjust the polishing fluid formulation, adjustment is only carried out under specific conditions, simplifying the operation process and improving production efficiency. Within the predetermined duration, the polishing fluid formulation remains stable, which can ensure the flatness and particle level of the silicon wafer surface. For the situation where the pressure and rotational speed fluctuate but the changed pressure and rotational speed are less than the predetermined duration, since the duration is short, the adverse impact on polishing is small, and thus a high-quality polishing effect can still be ensured.

[0056] See Figure 3 , embodiments of the present disclosure further provide a silicon wafer W processing device 1 for use in double-sided polishing of the silicon wafer W. The device 1 may include: A monitoring unit 10 for monitoring in real time the pressure applied to the silicon wafer W and the rotational speed of the polishing pad 2 for polishing the silicon wafer W during double-sided polishing; A classification unit 20 for classifying the pressure into one of a plurality of preset pressure ranges and classifying the rotational speed into one of a plurality of preset speed ranges; Supply unit 30, which is used to provide polishing liquid S with a corresponding formula in double-sided polishing according to the classified pressure range and classified speed range.

[0057] The silicon wafer W processing device 1 of the present disclosure monitors the pressure and rotational speed during the polishing process in real time through the monitoring unit 10, and the supply unit 30 provides polishing liquid S with a corresponding formula according to the monitoring results. This dynamic adjustment ensures that the characteristics of the polishing liquid S match the operating conditions, enabling the silicon wafer W to maintain excellent flatness and particle level even when the pressure and speed fluctuate, significantly improving the stability of the polishing quality.

[0058] In some embodiments of the present disclosure, referring to Figure 3 , the silicon wafer W processing device 1 may further include: Determination unit 40, which is used to determine the required content of each component in the polishing liquid S according to the classified pressure range and classified speed range; Configuration unit 50, which is used to configure the polishing liquid S according to the determined content.

[0059] The present disclosure determines the content of each component of the polishing liquid S through the determination unit 40, and the configuration unit 50 configures the polishing liquid S accordingly. This realizes the precise control of the multi-scale characteristics of the polishing liquid S, enabling excellent polishing effects to be maintained under different pressures and rotational speeds, and comprehensively optimizing the performance of the polishing liquid to adapt to changing polishing conditions.

[0060] In the present disclosure, although the present disclosure has been described with reference to exemplary embodiments, it should be understood that the present disclosure is not limited to the specific embodiments described and illustrated in detail herein. Without departing from the scope defined by the claims of the present disclosure, those skilled in the art can make various changes to the exemplary embodiments.

[0061] The features mentioned and / or illustrated in the above description of the exemplary embodiments of the present disclosure can be combined in the same or similar manner into one or more other embodiments, combined with the features in other embodiments or replace the corresponding features in other embodiments. The technical solutions obtained through such combination or replacement should also be regarded as being included within the protection scope of the present disclosure.

Claims

1. A silicon wafer processing method for use in double-sided polishing of the silicon wafer, characterized in that, Comprising: During the double-sided polishing process, the pressure applied to the silicon wafer and the rotational speed of the polishing pad for polishing the silicon wafer are monitored in real time; The pressure is classified into one of a plurality of preset pressure ranges, and the rotational speed is classified into one of a plurality of preset speed ranges; According to the classified pressure range and the classified speed range, a polishing liquid with a corresponding formula is provided in the double-sided polishing.

2. The silicon wafer processing method according to claim 1, wherein The plurality of pressure ranges are divided from a total pressure range of 800 daN to 1700 daN, and the plurality of speed ranges are divided from a total speed range of 20 rpm to 40 rpm.

3. The silicon wafer processing method according to claim 2, wherein, The plurality of pressure ranges divided from the total pressure range are: 800 daN to 1000 daN, 1000 daN to 1400 daN, and 1400 daN to 1700 daN, and the plurality of speed ranges divided from the total speed range are: 20 rpm to 25 rpm, 25 rpm to 35 rpm, and 35 rpm to 40 rpm.

4. The silicon wafer processing method according to any one of claims 1 to 3, characterized in that, The polishing liquid is composed of an abrasive, an oxidant, a dispersant, a surfactant, a complexing agent, and water.

5. The silicon wafer processing method according to claim 4, characterized in that, The formula of the polishing liquid includes: the particle size of the abrasive, the mass percentage of the abrasive, the mass percentage of the oxidant, the mass percentage of the dispersant, the mass percentage of the surfactant, the mass percentage of the complexing agent, and the pH value of the polishing liquid.

6. The silicon wafer processing method according to claim 4, characterized in that, The abrasive is SiO2, the oxidant is H2O2, the dispersant is sodium polyacrylate, the surfactant is fatty alcohol polyoxyethylene ether, and the complexing agent is ethylenediaminetetraacetic acid.

7. The method for processing a silicon wafer according to any one of claims 1 to 3, characterized in that, The providing a polishing liquid with a corresponding formula in the double-sided polishing according to the classified pressure range and the classified speed range includes: Determining the required content of each component in the polishing liquid according to the classified pressure range and the classified speed range, and preparing the polishing liquid according to the content.

8. The silicon wafer processing method according to any one of claims 1 to 3, characterized in that, The providing a polishing liquid with a corresponding formula in the double-sided polishing according to the classified pressure range and the classified speed range includes: When the duration during which the pressure is within the classified pressure range and the rotational speed is within the classified pressure range is greater than or equal to a preset duration, the polishing liquid is provided in the double-sided polishing.

9. A silicon wafer processing apparatus for use in double-sided polishing of the silicon wafer, characterized in that, Comprising: A monitoring unit for monitoring in real time the pressure applied to the silicon wafer and the rotational speed of the polishing pad for polishing the silicon wafer during the double-sided polishing process; A classification unit for classifying the pressure into one of a plurality of preset pressure ranges and classifying the rotational speed into one of a plurality of preset speed ranges; A supply unit for providing a polishing liquid with a corresponding formula in the double-sided polishing according to the classified pressure range and the classified speed range.

10. The silicon wafer processing device according to claim 9, characterized in that, The silicon wafer processing device further includes: A determination unit for determining the required content of each component in the polishing liquid according to the classified pressure range and the classified speed range; A configuration unit, which is used to configure the polishing liquid according to the content.

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