Highly transparent conductive glass and preparation method thereof

Abstract

The present invention relates to the technical field of functional glass, and more specifically, to a highly transparent conductive glass and a preparation method thereof. A continuous grid photolithography pattern is first prepared on a glass substrate using a photolithography process, with the glass substrate within the grid lines being exposed and the grid lines being filled with photoresist. A chromium film, a silver film, and an aluminum film are sequentially sputtered on the photolithography pattern, and then the glass substrate within the grid lines is ultrasonically cleaned in a degumming solution. This causes the photoresist to fall off, exposing the glass substrate within the grid lines. The grid lines are filled with chromium / silver / aluminum films. A first Nb2O5 film, a first SiO2 film, a second Nb2O5 film, and a second SiO2 film are then sequentially sputtered, and the films are referred to as multilayer oxide films. The glass substrate is then ultrasonically cleaned in a sodium hydroxide solution, causing the aluminum film to react with the sodium hydroxide solution and dissolve, leaving the multilayer oxide films within the grid lines and the chromium / silver films within the grid lines. The thickness of the multilayer oxide films is consistent with that of the chromium / silver films. Finally, a third SiO2 film is sputtered, thereby obtaining the highly transparent conductive glass.

Description

Technical Field

[0001] The present invention relates to the technical field of functional glass, in particular to a highly transparent conductive glass and a preparation method thereof. Background Art

[0002] Conductive glass is a functional glass made by depositing a transparent conductive film with conductive properties on the surface of ordinary glass. It is widely used in the fields of solar cells, touch displays, liquid crystal displays, light-emitting diodes, smart windows, and flexible electronic devices. While achieving the electrical functions of the device, it still needs to maintain good optical properties, especially high light transmittance, which has a crucial impact on its performance and efficiency in practical applications. However, it is well known that when a layer of transparent conductive film is introduced on the surface of glass, such as common materials such as indium tin oxide, indium zinc oxide, zinc aluminum oxide or conductive polymers, although it can effectively give the glass conductive properties, it will inevitably have an adverse effect on its optical properties, especially reducing its light transmittance. This is because the conductive material itself has a certain absorption and scattering effect on light, especially in the visible light region.

[0003] Because the transmittance of glass itself is below 91%, producing conductive glass with a transmittance greater than 90% presents a significant technical challenge. Ideal conductive glass should possess low surface resistance (e.g., below 10Ω / □) and high transmittance (e.g., above 80%). However, these two properties are often contradictory: increasing film thickness or carrier concentration can reduce resistance, but this typically also results in a decrease in transmittance. Therefore, achieving the synergistic optimization of high conductivity and high transmittance requires in-depth research in material design, film structure control, preparation processes, and post-processing technologies. Summary of the Invention

[0004] To solve the above problems, the present invention utilizes anti-reflection and metal grid technology, aiming to provide a highly transparent conductive glass and a preparation method thereof.

[0005] A method for preparing highly transparent conductive glass comprises the following steps:

[0006] (1) After cleaning the glass substrate, a layer of photoresist is coated on its surface, and a continuous grid photolithography pattern is obtained by photolithography. The glass substrate located in the grid is in a bare state, and the grid is filled with photoresist;

[0007] Furthermore, the photolithography process in step (1) is a conventional photolithography process, specifically, the glass substrate coated with the photoresist is pre-baked, then placed under the mask of the ultraviolet photolithography machine for exposure, then post-baked, and then placed in a developer for development to obtain a continuous grid photolithography pattern; the thickness of the photoresist is 1000-2000nm; the continuous grid photolithography pattern is a continuous square grid photolithography pattern with a grid line length of 300μm and a line width of 3μm; the glass substrate located in the grid line is in an exposed state, and the square grid is filled with photoresist.

[0008] Furthermore, in step (1), the pre-baking is performed at 120°C for 5 minutes; and the post-baking is performed at 110°C for 5 minutes.

[0009] (2) Place the sample obtained in step (1) into the magnetron sputtering chamber and pump the background vacuum to 5×10 -4 Below Pa, high-purity argon gas is introduced, the sputtering target is a high-purity metal chromium target, and a chromium film is sputtered on the photolithography pattern at room temperature;

[0010] Furthermore, in step (2), the sputtering pressure is 0.8-1.2 Pa, the sputtering power is 50-150 W, and the thickness of the chromium film is 10-30 nm. The film acts as a transition layer and has an adhesion effect.

[0011] (3) This step is the same as the sputtering conditions in step (2), except that high-purity metallic silver is used as the sputtering target and the silver film is sputtered on the surface of the chromium film;

[0012] Furthermore, the thickness of the silver film in step (3) is 160-180 nm; the total thickness of the silver film and the chromium film is 190 nm.

[0013] (4) The sputtering conditions in this step are the same as those in step (2), except that high-purity metal aluminum is used as the sputtering target to sputter the aluminum film on the surface of the silver film;

[0014] Furthermore, the thickness of the aluminum film in step (4) is 300-500 nm.

[0015] (5) placing the sample obtained in step (4) into a degumming solution and ultrasonically cleaning it, so that the photoresist in the grid reacts with the degumming solution and dissolves into the degumming solution, and the corresponding chromium / silver / aluminum film on the surface of the photoresist falls off. Then, in the continuous grid photolithography pattern, the glass substrate in the grid is in a bare state, and the mesh wire is filled with the chromium / silver / aluminum film, which is the film obtained by sputtering the chromium film, silver film, and aluminum film in steps (2), (3), and (4) in sequence;

[0016] Furthermore, in step (5), ultrasonic cleaning is performed for 5-10 minutes.

[0017] (6) placing the sample obtained in step (5) into a magnetron sputtering chamber, and sequentially sputtering a first Nb2O5 film, a first SiO2 film, a second Nb2O5 film, and a second SiO2 film on the side of the sample having the continuous grid photolithography pattern by magnetron sputtering, wherein the first Nb2O5 film, the first SiO2 film, the second Nb2O5 film, and the second SiO2 film are recorded as a multilayer oxide film;

[0018] Furthermore, when magnetron sputtering is used in step (6), the background vacuum is 5×10 -4 Pa or less, the sputtering gas is high-purity argon, the sputtering pressure is 0.8-1.2 Pa, the sputtering power is 50-150 W, the preparation temperature is room temperature, the target material used in preparing the first Nb2O5 film and the second Nb2O5 film is a Nb2O5 ceramic target, and the target material used in preparing the first SiO2 film and the second SiO2 film is a SiO2 ceramic target;

[0019] Furthermore, in step (6), the thickness of the first Nb2O5 film is 22 nm, the thickness of the first SiO2 film is 40 nm, the thickness of the second Nb2O5 film is 34 nm, and the thickness of the second SiO2 film is 94 nm.

[0020] (7) The sample obtained in step (6) is placed in a sodium hydroxide solution and ultrasonically cleaned. During this process, the aluminum film reacts with the sodium hydroxide solution and dissolves into the sodium hydroxide solution, and the corresponding multi-layer oxide film on the surface of the aluminum film falls off. The multi-layer oxide film located in the grid and the chromium / silver film located in the mesh line are left in the continuous grid lithography pattern. The thickness of the above-mentioned multi-layer oxide film is consistent with the thickness of the chromium / silver film.

[0021] Furthermore, in step (7), ultrasonic cleaning is performed for 10-20 minutes; the mass fraction of the sodium hydroxide solution is 5%.

[0022] (8) The sample obtained in step (7) is placed in a magnetron sputtering chamber, and a third SiO2 film is sputtered on the side of the sample having the multilayer oxide film and the chromium / silver film using the same sputtering conditions as in step (6), thereby obtaining a highly transparent conductive glass.

[0023] Furthermore, the thickness of the third SiO2 film in step (8) is 16 nm. The third SiO2 film protects silver, prevents silver from contacting with external oxygen, and prevents silver from oxidizing. At the same time, the third SiO2 film also forms an anti-reflection effect on the glass together with the multilayer oxide film obtained in step (6).

[0024] The present invention also provides a highly transparent conductive glass obtained according to the above preparation method.

[0025] Compared with the prior art, the present invention has the following beneficial effects:

[0026] The present invention utilizes anti-reflection and metal grid technology to provide a highly transparent conductive glass and a preparation method thereof. The glass has a high visible light transmittance of ≥91% and a low square resistance of 10-15Ω / □. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1 Schematic diagram of the cross-sectional structure of the highly transparent conductive glass prepared in Example 1 of the present invention;

[0028] Figure 2 This is a high-resolution optical topography image of the highly transparent conductive glass prepared in Example 1 of the present invention. DETAILED DESCRIPTION

[0029] In order to better understand the content of the present invention, the present invention will be further described below in conjunction with specific examples and drawings. The following examples are implemented based on the technology of the present invention and provide detailed implementation methods and operating steps, but the scope of protection of the present invention is not limited to the following examples.

[0030] Example 1:

[0031] (1) After cleaning the glass substrate, a 1.5 μm thick layer of photoresist was coated on its surface, pre-baked at 120°C for 5 minutes, and then placed under the mask of a UV photolithography machine for exposure for 30 seconds. Subsequently, it was post-baked at 110°C for 5 minutes, and then placed in a developer for development for 50 seconds to obtain a continuous square grid lithography pattern with a grid line length of 300 μm and a line width of 3 μm. The glass substrate located within the grid line was in an exposed state, and the square grid was filled with photoresist;

[0032] (2) Place the sample obtained in step (1) into the magnetron sputtering chamber and pump the background vacuum to 3×10 -4 Pa, high-purity argon gas was introduced, the sputtering pressure was 1.0 Pa, the sputtering power was 100 W, and a high-purity metal chromium target was used as the sputtering target. A 20 nm thick chromium film was sputtered on the photolithography pattern at room temperature;

[0033] (3) The sputtering conditions in this step are the same as those in step (2), except that high-purity metallic silver is used as the sputtering target, and a 170 nm thick silver film is sputtered on the surface of the chromium film;

[0034] (4) The sputtering conditions in this step are the same as those in step (2), except that high-purity aluminum is used as the sputtering target, and a 400 nm thick aluminum film is sputtered on the surface of the silver film;

[0035] (5) The sample obtained in step (4) is placed in a degumming solution and ultrasonically cleaned for 8 minutes. The photoresist in the square grid reacts with the degumming solution and dissolves into the degumming solution, and the chromium / silver / aluminum film on the corresponding photoresist surface falls off. In the continuous square grid photolithography pattern with a grid line length of 300 μm and a line width of 3 μm, the glass substrate in the square grid is in a bare state, and the grid line is filled with a chromium / silver / aluminum film. The chromium / silver / aluminum film is the film obtained by sputtering a chromium film, a silver film, and an aluminum film in steps (2), (3), and (4) in sequence.

[0036] (6) Place the sample obtained in step (5) into the magnetron sputtering chamber and pump the background vacuum to 3×10 -4 Pa, high-purity argon gas was introduced, the sputtering pressure was 1.0 Pa, the sputtering power was 100 W, and at room temperature, a first Nb2O5 film with a thickness of 22 nm, a first SiO2 film with a thickness of 40 nm, a second Nb2O5 film with a thickness of 34 nm, and a second SiO2 film with a thickness of 94 nm were sputtered in sequence on one side of the sample having a continuous square grid lithography pattern. The first Nb2O5 film, the first SiO2 film, the second Nb2O5 film, and the second SiO2 film are recorded as a multilayer oxide film;

[0037] (7) The sample obtained in step (6) was placed in a sodium hydroxide solution with a mass fraction of 5%, and ultrasonically cleaned for 15 minutes. During this process, the aluminum film reacted with the sodium hydroxide solution and dissolved into the sodium hydroxide solution, and the corresponding multilayer oxide film on the surface of the aluminum film fell off. The multilayer oxide film located in the square grid and the chromium / silver film located in the mesh line were left in the continuous square grid lithography pattern. The thickness of the multilayer oxide film was consistent with the thickness of the chromium / silver film, both of which were 190 nm.

[0038] (8) The sample obtained in step (7) is placed in a magnetron sputtering chamber, and a third SiO2 film with a thickness of 16 nm is sputtered on the side of the sample having the multilayer oxide film and the chromium / silver film using the same sputtering conditions as in step (6), thereby obtaining a highly transparent conductive glass.

[0039] The conductive glass obtained through testing has an average transmittance of 92.1% in the visible light region and a sheet resistance of 12.1Ω / □.

[0040] Example 2:

[0041] (1) After cleaning the glass substrate, a 1.0 μm thick layer of photoresist was coated on its surface, pre-baked at 120°C for 5 minutes, and then placed under the mask of a UV photolithography machine for exposure for 30 seconds. Subsequently, it was post-baked at 110°C for 5 minutes and then placed in a developer for development for 50 seconds to obtain a continuous square grid lithography pattern with a grid line length of 300 μm and a line width of 3 μm. The glass substrate located within the grid line was in an exposed state, and the square grid was filled with photoresist;

[0042] (2) Place the sample obtained in step (1) into the magnetron sputtering chamber and pump the background vacuum to 5×10 -4 Pa, high-purity argon gas was introduced, the sputtering pressure was 0.8 Pa, the sputtering power was 50 W, and a high-purity metal chromium target was used as the sputtering target. A 10 nm thick chromium film was sputtered on the photolithography pattern at room temperature;

[0043] (3) The sputtering conditions in this step are the same as those in step (2), except that high-purity metallic silver is used as the sputtering target, and a silver film with a thickness of 180 nm is sputtered on the surface of the chromium film;

[0044] (4) The sputtering conditions in this step are the same as those in step (2), except that high-purity aluminum is used as the sputtering target, and a 300 nm thick aluminum film is sputtered on the surface of the silver film;

[0045] (5) The sample obtained in step (4) is placed in a degumming solution and ultrasonically cleaned for 5 minutes. The photoresist in the square grid reacts with the degumming solution and dissolves into the degumming solution, and the chromium / silver / aluminum film on the corresponding photoresist surface falls off. In the continuous square grid photolithography pattern with a grid line length of 300 μm and a line width of 3 μm, the glass substrate in the square grid is in a bare state, and the grid line is filled with a chromium / silver / aluminum film. The chromium / silver / aluminum film is the film obtained by sputtering a chromium film, a silver film, and an aluminum film in steps (2), (3), and (4) in sequence.

[0046] (6) Place the sample obtained in step (5) into the magnetron sputtering chamber and pump the background vacuum to 3×10 -4 Pa, high-purity argon gas was introduced, the sputtering pressure was 1.0 Pa, the sputtering power was 100 W, and at room temperature, a first Nb2O5 film with a thickness of 22 nm, a first SiO2 film with a thickness of 40 nm, a second Nb2O5 film with a thickness of 34 nm, and a second SiO2 film with a thickness of 94 nm were sputtered in sequence on one side of the sample having a continuous square grid lithography pattern. The first Nb2O5 film, the first SiO2 film, the second Nb2O5 film, and the second SiO2 film were recorded as a multilayer oxide film;

[0047] (7) The sample obtained in step (6) was placed in a sodium hydroxide solution with a mass fraction of 5%, and ultrasonically cleaned for 10 minutes. During this process, the aluminum film reacted with the sodium hydroxide solution and dissolved into the sodium hydroxide solution, and the corresponding multilayer oxide film on the surface of the aluminum film fell off. The multilayer oxide film located in the square grid and the chromium / silver film located in the mesh line were left in the continuous square grid lithography pattern. The thickness of the multilayer oxide film was consistent with the thickness of the chromium / silver film, both of which were 190 nm.

[0048] (8) The sample obtained in step (7) is placed in a magnetron sputtering chamber, and a third SiO2 film with a thickness of 16 nm is sputtered on the side of the sample having the multilayer oxide film and the chromium / silver film using the same sputtering conditions as in step (6), thereby obtaining a highly transparent conductive glass.

[0049] The conductive glass obtained through testing has an average transmittance of 91.9% in the visible light region and a sheet resistance of 10.3Ω / □.

[0050] Example 3:

[0051] (1) After cleaning the glass substrate, a 2 μm thick layer of photoresist was coated on its surface, pre-baked at 120°C for 5 minutes, and then placed under the mask of a UV photolithography machine for exposure for 30 seconds. Subsequently, it was post-baked at 110°C for 5 minutes and then placed in a developer for development for 50 seconds to obtain a continuous square grid lithography pattern with a grid line length of 300 μm and a line width of 3 μm. The glass substrate located within the grid line was in an exposed state, and the square grid was filled with photoresist;

[0052] (2) Place the sample obtained in step (1) into the magnetron sputtering chamber and pump the background vacuum to 5×10 -4 Pa, high-purity argon gas was introduced, the sputtering pressure was 1.2 Pa, the sputtering power was 150 W, and a high-purity metal chromium target was used as the sputtering target. A 30 nm thick chromium film was sputtered on the photolithography pattern at room temperature;

[0053] (3) The sputtering conditions in this step are the same as those in step (2), except that high-purity metallic silver is used as the sputtering target, and a 160 nm thick silver film is sputtered on the surface of the chromium film;

[0054] (4) The sputtering conditions in this step are the same as those in step (2), except that high-purity aluminum is used as the sputtering target, and a 500 nm thick aluminum film is sputtered on the surface of the silver film;

[0055] (5) The sample obtained in step (4) is placed in a degumming solution and ultrasonically cleaned for 8 minutes. The photoresist in the square grid reacts with the degumming solution and dissolves into the degumming solution, and the chromium / silver / aluminum film on the corresponding photoresist surface falls off. In the continuous square grid photolithography pattern with a grid line length of 300 μm and a line width of 3 μm, the glass substrate in the square grid is in a bare state, and the grid line is filled with a chromium / silver / aluminum film. The chromium / silver / aluminum film is the film obtained by sputtering a chromium film, a silver film, and an aluminum film in steps (2), (3), and (4) in sequence.

[0056] (6) Place the sample obtained in step (5) into the magnetron sputtering chamber and pump the background vacuum to 5×10 -4 Pa, high-purity argon gas was introduced, the sputtering pressure was 1.2 Pa, the sputtering power was 150 W, and at room temperature, a first Nb2O5 film with a thickness of 22 nm, a first SiO2 film with a thickness of 40 nm, a second Nb2O5 film with a thickness of 34 nm, and a second SiO2 film with a thickness of 94 nm were sputtered in sequence on the side of the sample having a continuous square grid lithography pattern. The first Nb2O5 film, the first SiO2 film, the second Nb2O5 film, and the second SiO2 film are recorded as a multilayer oxide film;

[0057] (7) The sample obtained in step (6) was placed in a sodium hydroxide solution with a mass fraction of 5%, and ultrasonically cleaned for 20 minutes. During this process, the aluminum film reacted with the sodium hydroxide solution and dissolved into the sodium hydroxide solution, and the corresponding multilayer oxide film on the surface of the aluminum film fell off. The multilayer oxide film located in the square grid and the chromium / silver film located in the mesh line were left in the continuous square grid lithography pattern. The thickness of the multilayer oxide film was consistent with the thickness of the chromium / silver film, both of which were 190 nm.

[0058] (8) The sample obtained in step (7) is placed in a magnetron sputtering chamber, and a third SiO2 film with a thickness of 16 nm is sputtered on the side of the sample having the multilayer oxide film and the chromium / silver film using the same sputtering conditions as in step (6), thereby obtaining a highly transparent conductive glass.

[0059] The conductive glass obtained through testing has an average transmittance of 91.5% in the visible light region and a sheet resistance of 14.1Ω / □.

[0060] Example 4:

[0061] (1) After cleaning the glass substrate, a 1.5 μm thick layer of photoresist was coated on its surface, pre-baked at 120°C for 5 minutes, and then placed under the mask of a UV photolithography machine for exposure for 30 seconds. Subsequently, it was post-baked at 110°C for 5 minutes, and then placed in a developer for development for 50 seconds to obtain a continuous square grid lithography pattern with a grid line length of 300 μm and a line width of 3 μm. The glass substrate located within the grid line was in an exposed state, and the square grid was filled with photoresist;

[0062] (2) Place the sample obtained in step (1) into the magnetron sputtering chamber and pump the background vacuum to 4×10 -4 Pa, high-purity argon gas was introduced, the sputtering pressure was 1.1 Pa, the sputtering power was 120 W, and a high-purity metal chromium target was used as the sputtering target. A 25 nm thick chromium film was sputtered on the photolithography pattern at room temperature;

[0063] (3) The sputtering conditions in this step are the same as those in step (2), except that high-purity metallic silver is used as the sputtering target, and a 165 nm thick silver film is sputtered on the surface of the chromium film;

[0064] (4) The sputtering conditions in this step are the same as those in step (2), except that high-purity aluminum is used as the sputtering target, and a 450 nm thick aluminum film is sputtered on the surface of the silver film;

[0065] (5) The sample obtained in step (4) is placed in a degumming solution and ultrasonically cleaned for 8 minutes. The photoresist in the square grid reacts with the degumming solution and dissolves in the degumming solution, and the chromium / silver / aluminum film on the corresponding photoresist surface falls off. In the continuous square grid photolithography pattern with a grid line length of 300 μm and a line width of 3 μm, the glass substrate in the square grid is in a bare state, and the grid line is filled with a chromium / silver / aluminum film. The chromium / silver / aluminum film is the film obtained by sputtering a chromium film, a silver film, and an aluminum film in steps (2), (3), and (4) in sequence.

[0066] (6) Place the sample obtained in step (5) into the magnetron sputtering chamber and pump the background vacuum to 5×10 -4 Pa, high-purity argon gas was introduced, the sputtering pressure was 1.1 Pa, the sputtering power was 150 W, and at room temperature, a first Nb2O5 film with a thickness of 22 nm, a first SiO2 film with a thickness of 40 nm, a second Nb2O5 film with a thickness of 34 nm, and a second SiO2 film with a thickness of 94 nm were sputtered in sequence on one side of the sample having a continuous square grid lithography pattern. The first Nb2O5 film, the first SiO2 film, the second Nb2O5 film, and the second SiO2 film are recorded as a multilayer oxide film;

[0067] (7) The sample obtained in step (6) was placed in a sodium hydroxide solution with a mass fraction of 5%, and ultrasonically cleaned for 16 minutes. During this process, the aluminum film reacted with the sodium hydroxide solution and dissolved into the sodium hydroxide solution, and the corresponding multilayer oxide film on the surface of the aluminum film fell off. The multilayer oxide film located in the square grid and the chromium / silver film located in the mesh line were left in the continuous square grid lithography pattern. The thickness of the multilayer oxide film was consistent with the thickness of the chromium / silver film, both of which were 190 nm.

[0068] (8) The sample obtained in step (7) is placed in a magnetron sputtering chamber, and a third SiO2 film with a thickness of 16 nm is sputtered on the side of the sample having the multilayer oxide film and the chromium / silver film using the same sputtering conditions as in step (6), thereby obtaining a highly transparent conductive glass.

[0069] The average transmittance of the conductive glass in the visible light region was found to be 91.7%, and the sheet resistance was 13.2Ω / □.

[0070] The above description is merely an embodiment of the present invention and does not constitute any form of limitation to the present invention. The present invention may also have other forms of embodiments based on the above structures and functions, which are not listed here one by one. Therefore, any simple modification, equivalent changes, and modifications made to the above embodiments by any person skilled in the art in accordance with the technical essence of the present invention without departing from the scope of the technical solution of the present invention shall still fall within the scope of the technical solution of the present invention.

Claims

1. A method for preparing highly transparent conductive glass, characterized in that: The specific steps include: (1) After cleaning the glass substrate, a layer of photoresist is coated on its surface, and a continuous grid photolithography pattern is obtained by photolithography. The glass substrate located in the grid is in a bare state, and the grid is filled with photoresist; (2) Place the sample obtained in step (1) into the magnetron sputtering chamber and pump the background vacuum to 5×10 -4 Below Pa, high-purity argon gas is introduced, the sputtering target is a high-purity metal chromium target, and a chromium film is sputtered on the photolithography pattern at room temperature; (3) This step is the same as the sputtering conditions in step (2), except that high-purity metallic silver is used as the sputtering target and the silver film is sputtered on the surface of the chromium film; (4) The sputtering conditions in this step are the same as those in step (2), except that high-purity metal aluminum is used as the sputtering target to sputter the aluminum film on the surface of the silver film; (5) placing the sample obtained in step (4) into a degumming solution and ultrasonically cleaning it, so that the photoresist falls off. In the continuous grid photolithography pattern, the glass substrate in the grid is exposed, and the mesh wire is filled with chromium / silver / aluminum film; (6) sputtering a first Nb2O5 film, a first SiO2 film, a second Nb2O5 film, and a second SiO2 film in sequence on the side of the sample obtained in step (5) having the continuous grid photolithography pattern by magnetron sputtering, and recording the first Nb2O5 film, the first SiO2 film, the second Nb2O5 film, and the second SiO2 film as a multilayer oxide film; (7) The sample obtained in step (6) is placed in a sodium hydroxide solution and ultrasonically cleaned, so that the aluminum film falls off, and the multilayer oxide film located in the grid and the chromium / silver film located in the mesh line are left in the continuous grid lithography pattern, and the thickness of the multilayer oxide film is consistent with the thickness of the chromium / silver film; (8) The sample obtained in step (7) is placed in a magnetron sputtering chamber, and a third SiO2 film is sputtered on the side of the sample having the multilayer oxide film and the chromium / silver film using the same sputtering conditions as in step (6) to obtain a highly transparent conductive glass.

2. The method for preparing the highly transparent conductive glass according to claim 1, wherein: The photolithography process used in step (1) is to pre-bake the glass substrate coated with photoresist, then place it under the mask of an ultraviolet photolithography machine for exposure, then post-bake it, and then place it in a developer for development to obtain a continuous grid photolithography pattern; the thickness of the photoresist is 1000-2000nm; the continuous grid photolithography pattern is a continuous square grid photolithography pattern with a grid line length of 300μm and a line width of 3μm; the glass substrate located in the grid line is in an exposed state, and the square grid is filled with photoresist.

3. The method for preparing the highly transparent conductive glass according to claim 2, wherein: Pre-bake at 120°C for 5 minutes; post-bake at 110°C for 5 minutes.

4. The method for preparing the highly transparent conductive glass according to claim 1, wherein: In step (2), the sputtering pressure is 0.8-1.2 Pa, the sputtering power is 50-150 W, and the thickness of the chromium film is 10-30 nm.

5. The method for preparing the highly transparent conductive glass according to claim 1, wherein: In step (3), the thickness of the silver film is 160-180 nm, and the total thickness of the silver film and the chromium film is 190 nm; in step (4), the thickness of the aluminum film is 300-500 nm.

6. The method for preparing highly transparent conductive glass according to claim 1, wherein: In step (5), ultrasonic cleaning is performed for 5-10 minutes.

7. The method for preparing highly transparent conductive glass according to claim 1, wherein: When magnetron sputtering is used in step (6), the background vacuum is 5×10 -4 Pa, the sputtering gas is high-purity argon, the sputtering gas pressure is 0.8-1.2Pa, the sputtering power is 50-150W, the preparation temperature is room temperature, the target material used in preparing the first Nb2O5 film and the second Nb2O5 film is Nb2O5 ceramic target, and the target material used in preparing the first SiO2 film and the second SiO2 film is SiO2 ceramic target.

8. The method for preparing highly transparent conductive glass according to claim 1, wherein: In step (6), the thickness of the first Nb2O5 film is 22 nm, the thickness of the first SiO2 film is 40 nm, the thickness of the second Nb2O5 film is 34 nm, and the thickness of the second SiO2 film is 94 nm; in step (8), the thickness of the third SiO2 film is 16 nm.

9. The method for preparing highly transparent conductive glass according to claim 1, wherein: In step (7), ultrasonic cleaning is performed for 10-20 minutes; the mass fraction of the sodium hydroxide solution is 5%.

10. A highly transparent conductive glass prepared by the preparation method according to any one of claims 1 to 9.

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