A special cable structure for molten salt tower-type solar thermal power generation

Abstract

The present invention relates to a molten salt tower type special cable structure for solar thermal power generation in the field of cables. In this application, a temperature adjustment layer is used to protect the connection between the cable body and the cable connector. When the temperature of the environment in which the cable body and the cable connector are located changes too high, the temperature sensor detects that the temperature of the phase change material reaches a preset interference temperature, and the programmable DC power supply supplies power to the semiconductor refrigeration unit until the phase change material reaches the preset adjustment temperature. At the same time, by adding a reflective unit and a photosensitive unit, the phase change process of the phase change material is detected. When the phase change material completes the phase change process, the semiconductor refrigeration unit can be shut down in time, reducing the ineffective working time of the semiconductor refrigeration unit and effectively extending the working life of the semiconductor refrigeration unit. At the same time, the cable body is not prone to excessive thermal expansion and contraction under large temperature differences, and is not prone to irreversible damage to the working state of the cable body.

Description

Technical Field

[0001] The present invention relates to a cable structure, in particular to a molten salt tower type special cable structure for photothermal power generation used in the cable field. Background Art

[0002] The molten salt tower solar thermal power station is a novel energy system that combines solar thermal collection, molten salt heat storage, and traditional power generation technologies. Its core advantage lies in its ability to provide stable, all-weather power supply through molten salt heat storage. A large number of heliostats reflect sunlight onto the heat absorber at the top of the tower, creating a high-temperature focal point with temperatures exceeding 560°C. When power generation is required, the high-temperature molten salt exchanges heat with water to produce high-temperature, high-pressure steam, which drives a steam turbine to generate electricity. After use, the molten salt cools and flows back into a low-temperature tank, forming a circulation system.

[0003] The invention patent CN118136313B specification discloses a high-temperature voltage-resistant cable for energy storage devices and a manufacturing method. A gap-filling layer is provided between the conductor and the protective layer, and the gap-filling layer is formed by filling a plurality of matrices provided with a conductive skin layer and a phase-change heat storage inner layer. The heat absorption and heat release of the phase-change heat storage inner layer can slow down the heating and cooling rates of the conductor, thereby reducing the impact of high-frequency thermal expansion and contraction on the material, and avoiding the generation of gaps between the conductor and the protective layer due to thermal expansion and contraction. The invention patent CN109087730B specification discloses a wear-resistant and scratch-resistant cable. The provision of steel wire strips and a first insulating layer helps prevent the cable conductor from breaking due to thermal expansion and contraction when the weather alternates between hot and cold.

[0004] In the prior art, cables are multi-layer structures. Under the same temperature change conditions, the thermal expansion and contraction of the multi-layer structure are different. When used in an environment with a large temperature difference for a short period of time, it is very easy for the layers to expand and contract differently, causing local excessive deformation and tearing, thereby affecting the normal use of the cable. In particular, the wiring part of the cable, one end of which is fixedly connected to the electrical appliance, is easily loosened when thermal expansion and contraction occur, causing the entire circuit to fail. Summary of the Invention

[0005] In view of the above-mentioned prior art, the technical problem to be solved by the present invention is that when the cable body undergoes thermal expansion and contraction in an environment with a large temperature difference in a short period of time, the connection between the cable and the electrical appliance is easily loosened, thereby causing the entire circuit to fail.

[0006] To solve the above problems, the present invention provides a molten salt tower type solar thermal power generation dedicated cable structure, comprising a fixedly connected cable body and a cable connector, a temperature regulating layer and a wire box are provided on the side of the cable body close to the cable connector, the wire box is located on the side of the temperature regulating layer close to the cable connector, a phase change cavity is excavated in the temperature regulating layer, the phase change cavity is filled with phase change material, a plurality of temperature sensors are fixedly connected to the side wall of the phase change cavity, a plurality of semiconductor refrigeration units are buried in the temperature regulating layer, and the semiconductor refrigeration units are electrically connected to the wire box, the wire box comprises a wire box body, a pair of connectors are plugged into the wire box body, the positive and negative poles of the plurality of power supply lines are twisted to form two groups of wires and are electrically connected to the two connectors respectively;

[0007] A heat dissipation structure 1 is placed in the phase change cavity, and a heat dissipation structure 2 is provided on the outside of the temperature adjustment layer. Both the heat dissipation structure 1 and the heat dissipation structure 2 are made of high thermal conductivity materials, and both the heat dissipation structure 1 and the heat dissipation structure 2 are connected to the semiconductor refrigeration unit and conduct heat. The inner wall of the phase change cavity is fixedly connected with a reflective unit and a photosensitive unit with matching positions.

[0008] In the above-mentioned molten salt tower solar thermal power generation dedicated cable structure, the thermal expansion and contraction amplitude in an environment with a large temperature difference in a short period of time is reduced, which is less likely to cause the cable joint to loosen and the entire circuit to fail.

[0009] As a further improvement of the present application, multiple semiconductor refrigeration units each include a semiconductor refrigeration plate, and one end of each semiconductor refrigeration plate close to the electrical box is fixedly connected to a pair of power supply wires, and the power supply wires are electrically connected to the electrical box.

[0010] As a further improvement of the present application, the phase change material is PCM-20, and its phase change temperature is 20°C. During the phase change process of the phase change material, it will remain at around 20 degrees Celsius for a long time, providing a suitable working temperature for the cable body.

[0011] As a further improvement of the present application, the heat dissipation structure includes a fixing ring, which is located in the phase change cavity. A temperature conducting column is fixedly connected between the fixing ring and multiple semiconductor refrigeration plates, and a heat dissipation fin is fixedly connected to the inner wall of the fixing ring to increase the heat exchange effect between the semiconductor refrigeration plate and the phase change material.

[0012] As a further improvement and supplement to the present application, a plurality of bypass holes are drilled on the heat dissipation fin 1, and the bypass holes on two adjacent heat dissipation fins 1 are staggered to increase the contact area between the heat dissipation structure 1 and the phase change material. At the same time, when the heat dissipation structure 1 heats the phase change material, the warm flow of the phase change material will be restricted and guided by the plurality of heat dissipation fins 1, thereby increasing the flow distance and making the phase change material heated more evenly.

[0013] As another improvement of the present application, the second heat dissipation structure includes two heat dissipation fins mounted on the outside of the temperature adjustment layer. Two temperature conducting columns are fixedly connected between the second heat dissipation fins and multiple semiconductor refrigeration plates to increase the heat exchange effect between the semiconductor refrigeration plates and the external environment.

[0014] As another improvement and supplement to the present application, a plurality of protective columns are fixedly connected to the outer end of the heat sink fin 2, and the plurality of protective columns cover half of the outer wall area of ​​the heat sink fin 2, thereby reducing the heat dissipation to the outer wall of the heat sink fin 2 while effectively protecting the heat sink fin 2 and reducing the risk of deformation of the heat sink fin 2 due to external force.

[0015] As another improvement of the present application, a bladeless fan is provided on the outer side of the cable body, and the bladeless fan is located on the side of the temperature regulating layer away from the cable connector. The bladeless fan includes a working part, and the lower end of the working part is fixedly connected to the fan body. The working part will generate wind force during operation, so that the air in the area where the bladeless fan is located flows from the temperature regulating layer to the bladeless fan, increasing the heat exchange effect of the heat dissipation structure 2, achieving the effect of driving the air flow, accelerating the air flow in the area where the heat dissipation structure 2 is located, and increasing the heat dissipation effect.

[0016] As another improvement of the present application, the part of the temperature regulating layer away from the cable body is made of an insulating elastic material, and the part of the temperature regulating layer close to the cable body is made of a thermally conductive elastic material, and the material density of the temperature regulating layer is greater than the density of the liquefied phase change material, so that the temperature of the phase change material filled in the temperature regulating layer directly reflects the temperature of the cable body in the area, and also reduces the heat exchange between the phase change material and the external environment, thereby increasing the efficiency of the semiconductor refrigeration unit. At the same time, the debris generated by the temperature regulating layer during the deformation process falls back to the bottom of the phase change cavity, which is not easy to block the reflective unit and the photosensitive unit, and is not easy to affect the normal operation of the reflective unit and the photosensitive unit.

[0017] To sum up, in this application, a temperature-regulating layer is used to protect the connection between the cable body and the cable connector. The temperature change of the environment in which the cable body and the cable connector are located is too high. The temperature sensor detects that the temperature of the phase change material reaches the preset interference temperature. The programmable DC power supply supplies power to the semiconductor refrigeration unit, and realizes fast and efficient heat exchange through heat dissipation structure one and heat dissipation structure two respectively until the phase change material reaches the preset adjustment temperature. The programmable DC power supply is turned off, the semiconductor refrigeration plate stops working, and the phase change material is used to absorb or release a large amount of heat through phase change. Excessive thermal expansion and contraction are not likely to occur, and it is not likely to cause irreversible damage to the working state of the cable body.

[0018] At the same time, by adding reflective units and photosensitive units, the phase change process of the phase change material can be detected on the basis of the temperature sensor detecting the temperature of the phase change material. When the phase change material completes the phase change process, the semiconductor refrigeration unit can be shut down in time, thereby reducing the ineffective working time of the semiconductor refrigeration unit and effectively extending the working life of the semiconductor refrigeration unit. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 This is a schematic diagram of a dedicated cable structure for molten salt tower-type solar thermal power generation according to the first embodiment of the present application;

[0020] Figure 2 This is a side view of the molten salt tower type solar thermal power generation dedicated cable structure according to the first embodiment of the present application;

[0021] Figure 3 for Figure 2 Schematic diagram of the structure at A in the middle;

[0022] Figure 4 This is a schematic structural diagram of a semiconductor refrigeration plate according to the first embodiment of the present application;

[0023] Figure 5 This is a structural diagram of the heat dissipation structure 1 of the first embodiment of the present application;

[0024] Figure 6 This is a structural diagram of the heat dissipation structure 2 of the first embodiment of the present application;

[0025] Figure 7 This is a schematic structural diagram of a bladeless fan according to a first embodiment of the present application;

[0026] Figure 8 This is a side view of a molten salt tower-type solar thermal power generation cable structure according to the second embodiment of the present application;

[0027] Figure 9 for Figure 8 Schematic diagram of the structure at B in the middle;

[0028] Figure 10 This is a schematic diagram of the operation of the light-emitting unit and the photosensitive unit in the second embodiment of the present application.

[0029] Description of the numbers in the figure:

[0030] 1 Cable body, 2 Cable connector, 3 Temperature adjustment layer, 4 Semiconductor refrigeration unit, 401 Semiconductor refrigeration sheet, 402 Power supply line, 5 Heat dissipation structure 1, 501 Fixing ring, 502 Temperature conduction column 1, 503 Heat dissipation fin 1, 504 Flow bypass hole, 6 Heat dissipation structure 2, 601 Heat dissipation fin 2, 602 Temperature conduction column 2, 603 Protective column, 7 Wire box, 701 Wire box body, 702 Connector, 8 Temperature sensor, 9 Bladeless fan, 901 Working part, 902 Fan body, 10 Reflective unit, 11 Photosensitive unit. DETAILED DESCRIPTION

[0031] Two implementation modes of the present application are described in detail below with reference to the accompanying drawings.

[0032] The first implementation method:

[0033] Figures 1-4 A molten salt tower type solar thermal power generation cable structure is shown, including a fixedly connected cable body 1 and a cable connector 2. A temperature adjustment layer 3 and a wire box 7 are provided on one side of the cable body 1 near the cable connector 2. The wire box 7 is located on the side of the temperature adjustment layer 3 near the cable connector 2. A phase change cavity is excavated in the temperature adjustment layer 3, and the phase change cavity is filled with phase change material. A plurality of temperature sensors 8 are fixedly connected to the side wall of the phase change cavity. A plurality of semiconductor refrigeration units 4 are buried in the temperature adjustment layer 3. The plurality of semiconductor refrigeration units 4 each include a semiconductor refrigeration plate 401. A pair of power lines 402 are fixedly connected to one end of the plurality of semiconductor refrigeration plates 401 near the wire box 7, and the power lines 402 are electrically connected to the wire box 7. The wire box 7 includes a wire box body 701, and a pair of connectors 702 are plugged into the wire box body 701. The positive and negative poles of the plurality of power lines 402 are twisted to form two groups of wires and are electrically connected to the two connectors 702 respectively. The connectors 702 are also connected to excess wires, so that the connectors 702 can be pulled out of the wire box body 701.

[0034] A heat dissipation structure 5 is placed in the phase change cavity, and a heat dissipation structure 2 6 is provided on the outside of the temperature adjustment layer 3. Both the heat dissipation structure 1 5 and the heat dissipation structure 2 6 are made of high thermal conductivity materials, and both the heat dissipation structure 1 5 and the heat dissipation structure 2 6 are connected to the semiconductor refrigeration unit 4 and conduct heat.

[0035] In the present application, the cable body 1 is plugged into the corresponding electrical device through the cable connector 2, and a programmable DC power supply is provided on the electrical device, and its current output direction can be controlled under a pre-programmed program to achieve current output in different directions under the same terminal, thereby achieving the semiconductor refrigeration plate 401 under the action of current in different directions. The cooling and heating at both ends of the semiconductor refrigeration plate 401 can be interchanged.

[0036] In this application, the temperature-regulating layer 3 is used to protect the connection between the cable body 1 and the cable connector 2. During the day, the ambient temperature of the cable body 1 and the cable connector 2 is too high, and the temperature sensor 8 detects that the temperature of the phase change material reaches a preset interference temperature (judged by the staff based on the actual situation, which is higher than the phase change temperature of the phase change material and is likely to cause irreversible damage to the working state of the cable body 1). The programmable DC power supply supplies power to the semiconductor refrigeration unit 4, and the semiconductor refrigeration plate 401 cools the side close to the cable body 1 and heats the side away from the cable body 1, and realizes fast and efficient heat exchange through the heat dissipation structure 1 5 and the heat dissipation structure 2 6 respectively. When the temperature detected by the temperature sensor 8 is lower than the phase change temperature of the phase change material, the programmable DC power supply is turned off, the semiconductor refrigeration plate 401 stops working, and the phase change material is used to absorb a large amount of heat to ensure that the cable body 1 is at a relatively low working temperature relative to the environment for a long time, and is not prone to expansion due to overheating, and is not prone to causing irreversible damage to the working state of the cable body 1.

[0037] At night, the ambient temperature of the cable body 1 and the cable connector 2 is too low. When the temperature sensor 8 detects that the temperature reaches the preset interference temperature lower than the phase change temperature of the phase change material, the programmable DC power supply supplies power to the semiconductor refrigeration unit 4, and the power supply current is reversed, and the semiconductor refrigeration plate 401 is close to the side of the cable body 1 for heating, and the semiconductor refrigeration plate 401 is away from the side of the cable body 1 for cooling. When the temperature detected by the temperature sensor 8 is higher than the phase change temperature of the phase change material, the programmable DC power supply is turned off, and the semiconductor refrigeration plate 401 stops working. The phase change of the phase change material is used to release heat, ensuring that the cable body 1 is at a relatively high working temperature relative to the environment for a long time, and is not prone to shrinkage due to overcooling, and is not prone to causing connection failure of the cable connector 2, and is not prone to causing failure of the entire circuit.

[0038] At the same time, the semiconductor refrigeration unit 4 has a large power and can release and absorb a large amount of heat in a short time and store it in the phase change material, avoiding the semiconductor refrigeration unit 4 from working at high power for a long time and not easily causing the semiconductor refrigeration unit 4 to fail.

[0039] The phase change material is PCM-20, and its phase change temperature is 20°C. During the phase change process of the phase change material, it will remain at around 20°C for a long time, providing a suitable working temperature for the cable body 1.

[0040] See also Figure 2 and Figure 5The heat dissipation structure 5 includes a fixing ring 501, which is located in the phase change cavity. A temperature conducting column 502 is fixedly connected between the fixing ring 501 and multiple semiconductor refrigeration sheets 401. A heat dissipation fin 503 is fixedly connected to the inner wall of the fixing ring 501 to increase the heat exchange effect between the semiconductor refrigeration sheet 401 and the phase change material. Multiple bypass holes 504 are opened on the heat dissipation fin 503. The bypass holes 504 on two adjacent heat dissipation fins 503 are staggered to increase the contact area between the heat dissipation structure 5 and the phase change material. At the same time, when the heat dissipation structure 5 heats the phase change material, the warm current of the phase change material will be restricted and guided by the multiple heat dissipation fins 503, increasing the flow distance and making the phase change material heated more evenly.

[0041] See also Figure 2 and Figure 6 The heat dissipation structure 2 6 includes a heat dissipation fin 2 601 which is sleeved on the outside of the temperature adjustment layer 3. A temperature conducting column 2 602 is fixedly connected between the heat dissipation fin 2 601 and the multiple semiconductor refrigeration fins 401 to increase the heat exchange effect between the semiconductor refrigeration fin 401 and the external environment. A plurality of protective columns 603 are fixedly connected to the outer end of the heat dissipation fin 2 601. The plurality of protective columns 603 cover half of the outer wall area of ​​the heat dissipation fin 2 601, reducing the heat dissipation of the outer wall of the heat dissipation fin 2 601 while effectively protecting the heat dissipation fin 2 601 and reducing the risk of deformation of the heat dissipation fin 2 601 due to external force.

[0042] See also Figure 1 and Figure 7 , a bladeless fan 9 is provided on the outside of the cable body 1, and the bladeless fan 9 is located on the side of the temperature regulating layer 3 away from the cable connector 2. The bladeless fan 9 includes a working part 901, and the lower end of the working part 901 is fixedly connected to the fan body 902. The working part 901 will generate wind force during operation, so that the air in the area where the bladeless fan 9 is located flows from the temperature regulating layer 3 to the bladeless fan 9, thereby increasing the heat exchange effect of the heat dissipation structure 2 6, and the fan body 902 is equipped with the structure for the normal operation of the bladeless fan 9, such as the power supply unit and the air boosting device, to achieve the effect of driving the air flow, accelerate the air flow in the area where the heat dissipation structure 2 6 is located, and increase the heat dissipation effect.

[0043] Second implementation method:

[0044] Figure 8-Figure 9 The temperature adjustment layer 3 is shown, and the inner wall of the phase change cavity is fixedly connected with a reflective unit 10 and a photosensitive unit 11 with matching positions, and the reflective unit 10 and the photosensitive unit 11 are both located on the upper side of the cable body 1, and the area of ​​the photosensitive unit 11 is larger than that of the reflective unit 10.

[0045] Since the temperature of the phase change material will not change significantly during the phase change process, during the operation of the semiconductor refrigeration unit 4, when the temperature sensor 8 detects that the temperature changes above or below the phase change point of the phase change material, the semiconductor refrigeration unit 4 has been overworked. In this embodiment, the introduced reflective unit 10 and photosensitive unit 11 can detect the specific phase change process of the phase change material during the phase change process of the phase change material by utilizing the principle that the scattering rate of light in different forms of the same substance is different. At the same time, since the reflective unit 10 and the photosensitive unit 11 are installed at the opposite edges of the phase change cavity, when the phase change of the phase change material is detected at their positions, most of the phase change material has completed the phase change, and detection errors are not likely to occur.

[0046] See also Figure 10 When the phase change material is liquid, the scattering rate of the light emitted by the reflective unit 10 is low. The solid line direction in the figure is the scattering limit, and the area of ​​light that can be received by the photosensitive unit 11 is small. As the phase change material gradually solidifies, its scattering rate will also increase. The dotted line direction in the figure is the scattering limit when the phase change material is solid, and the area of ​​light that can be received by the photosensitive unit 11 increases. Therefore, when the semiconductor refrigeration unit 4 is started, the reflective unit 10 and the photosensitive unit 11 can be started at the same time to detect the morphology of the phase change material, which more directly reflects the situation of the phase change material. With the assistance of the temperature detection of the temperature sensor 8, the semiconductor refrigeration unit 4 can be shut down in time, thereby reducing the ineffective working time of the semiconductor refrigeration unit 4 and effectively extending the working life of the semiconductor refrigeration unit 4.

[0047] The part of the temperature-adjusting layer 3 away from the cable body 1 is made of an insulating elastic material, and the part of the temperature-adjusting layer 3 close to the cable body 1 is made of a thermally conductive elastic material. The material density of the temperature-adjusting layer 3 is greater than the density of the liquefied phase change material, so that the temperature of the phase change material filled in the temperature-adjusting layer 3 directly reflects the temperature of the cable body 1 in the area, and also reduces the heat exchange between the phase change material and the external environment, thereby increasing the working efficiency of the semiconductor refrigeration unit 4. At the same time, the debris generated by the temperature-adjusting layer 3 during the deformation process falls back to the bottom of the phase change cavity, which is not easy to block the reflective unit 10 and the photosensitive unit 11, and is not easy to affect the normal operation of the reflective unit 10 and the photosensitive unit 11.

[0048] Compared with the first embodiment, in this embodiment, by adding a reflective unit 10 and a photosensitive unit 11, the phase change process of the phase change material is detected on the basis of the temperature sensor 8 detecting the temperature of the phase change material. When the phase change material completes the phase change process, the semiconductor refrigeration unit 4 can be shut down in time, thereby reducing the ineffective working time of the semiconductor refrigeration unit 4 and effectively extending the working life of the semiconductor refrigeration unit 4.

[0049] In view of current actual needs, the protection scope of the above-mentioned implementation mode adopted in this application is not limited to this. Various changes made within the knowledge scope of technical personnel in this field without departing from the concept of this application still fall within the protection scope of the present invention.

Claims

1. A molten salt tower type special cable structure for solar thermal power generation, comprising a fixedly connected cable body (1) and a cable connector (2), characterized in that: A temperature regulating layer (3) and a wire box (7) are sleeved on one side of the cable body (1) close to the cable connector (2); the wire box (7) is located on the side of the temperature regulating layer (3) close to the cable connector (2); a phase change cavity is bored in the temperature regulating layer (3); the phase change cavity is filled with a phase change material; a plurality of temperature sensors (8) are fixedly connected to the side wall of the phase change cavity; a plurality of semiconductor refrigeration units (4) are embedded in the temperature regulating layer (3), and the semiconductor refrigeration units (4) are electrically connected to the wire box (7); the wire box (7) includes a wire box body (701); a pair of connectors (702) are plugged into the wire box body (701); A heat dissipation structure (1) (5) is placed in the phase change cavity, and a heat dissipation structure (2) (6) is provided on the outer side of the temperature adjustment layer (3). Both the heat dissipation structure (1) (5) and the heat dissipation structure (2) (6) are made of high thermal conductivity materials. A reflective unit (10) and a photosensitive unit (11) whose positions match are fixedly connected to the inner wall of the phase change cavity.

2. A molten salt tower type solar thermal power generation cable structure according to claim 1, characterized in that: The plurality of semiconductor refrigeration units (4) each include a semiconductor refrigeration sheet (401), and one end of the plurality of semiconductor refrigeration sheets (401) close to the electrical box (7) is fixedly connected to a pair of power supply wires (402), and the positive and negative poles of the plurality of power supply wires (402) are twisted to form two groups of wires and are electrically connected to two connectors (702) respectively.

3. The molten salt tower type solar thermal power generation cable structure according to claim 1, characterized in that: The phase change material is PCM-20, and its phase change temperature is 20°C.

4. The molten salt tower type solar thermal power generation cable structure according to claim 1, characterized in that: The heat dissipation structure (5) comprises a fixing ring (501), the fixing ring (501) is located in the phase change cavity, a temperature conducting column (502) is fixedly connected between the fixing ring (501) and a plurality of semiconductor refrigeration plates (401), and a heat dissipation fin (503) is fixedly connected to the inner wall of the fixing ring (501).

5. The molten salt tower type solar thermal power generation cable structure according to claim 4, characterized in that: A plurality of bypass holes (504) are bored on the heat dissipation fin one (503), and the bypass holes (504) on two adjacent heat dissipation fins one (503) are staggered.

6. The molten salt tower type solar thermal power generation cable structure according to claim 1, characterized in that: The second heat dissipation structure (6) includes a second heat dissipation fin (601) sleeved on the outside of the temperature adjustment layer (3), and a second temperature conducting column (602) is fixedly connected between the second heat dissipation fin (601) and the plurality of semiconductor refrigeration sheets (401).

7. A molten salt tower type solar thermal power generation cable structure according to claim 6, characterized in that: The outer end of the second heat dissipation fin (601) is fixedly connected to a plurality of protective columns (603), and the plurality of protective columns (603) cover half of the outer wall area of ​​the second heat dissipation fin (601).

8. The molten salt tower type solar thermal power generation cable structure according to claim 1, characterized in that: A bladeless fan (9) is sleeved on the outer side of the cable body (1), and the bladeless fan (9) is located on a side of the temperature adjustment layer (3) away from the cable connector (2). The bladeless fan (9) comprises a working part (901), and the lower end of the working part (901) is fixedly connected to the fan body (902).

9. The molten salt tower type solar thermal power generation cable structure according to claim 1, characterized in that: The portion of the temperature adjustment layer (3) away from the cable body (1) is made of a heat-insulating elastic material, and the portion of the temperature adjustment layer (3) close to the cable body (1) is made of a heat-conductive elastic material, and the material density of the temperature adjustment layer (3) is greater than the density of the liquefied phase change material.

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