Substrate processing apparatus, gas supply system, substrate processing method, method for manufacturing semiconductor device, and program

Abstract

The present invention is provided with: a first valve which is provided in a first flow path connecting a gas supply source and a first nozzle for releasing gas into a processing chamber, and which controls the release of gas from the first nozzle; a second valve that is provided in a second flow path connecting a gas supply source and a second nozzle that releases gas into the processing chamber, and that controls release of the gas from the second nozzle; a third valve that is provided in a third flow path that connects the upstream side of the first valve in the first flow path and the downstream side of the second valve in the second flow path, and that controls the release of gas from the second nozzle; and a fourth valve that is provided in a fourth flow path connecting the upstream side of the second valve in the second flow path and the downstream side of the first valve in the first flow path, and that controls the release of the gas from the first nozzle. A difference between an average value of conductivity of the first and fourth valves and an average value of conductivity of the second and third valves is less than a difference between conductivity of the first valve and conductivity of the second valve.

Description

Technical Field

[0001] The present disclosure relates to a substrate processing apparatus, a gas supply system, a substrate processing method, a method for manufacturing a semiconductor device, and a program. Background Art

[0002] As an example of a substrate processing apparatus, a semiconductor manufacturing apparatus for manufacturing a semiconductor device is known. Further, as an example of a semiconductor manufacturing apparatus, a vertical apparatus disclosed in Patent Document 1 is known, and the vertical apparatus processes while holding a plurality of substrates (hereinafter also referred to as "wafers") in multiple layers in the vertical direction.

[0003] In the technique described in Patent Document 1, a source gas is supplied to a processing chamber through two systems of piping. That is, grooves are provided in each piping, and valves are provided on the upstream side and the downstream side of the grooves, respectively, and control is performed so that the accumulation of the source gas in the grooves and the release to the processing chamber are alternately repeated.

[0004] Prior Art Documents

[0005] Patent Documents

[0006] Patent Document 1: Japanese Unexamined Patent Application Publication No. 2022-052622 Summary of the Invention

[0007] Problems to be Solved by the Invention

[0008] When gas is supplied to the processing chamber, due to changes in the conductivity of the valves provided in the piping, the flow rate or flow velocity of the gas in the processing chamber will change. Therefore, sufficient reproducibility may not be obtained for substrate processing such as film formation.

[0009] The present disclosure has been made in view of the above problems, and provides a technique capable of eliminating a decrease in the reproducibility of substrate processing due to differences in valve conductivity.

[0010] Means for Solving the Problems

[0011] According to one aspect of the present disclosure, there is provided a technique configured to include:

[0012] (a) a first valve provided in a first flow path connecting a gas supply source and a first nozzle for releasing gas into a processing chamber, and controlling the release of the gas from the first nozzle;

[0013] (b) a second valve provided in a second flow path connecting the gas supply source and a second nozzle for releasing gas into the processing chamber, and controlling the release of the gas from the second nozzle;

[0014] (c) A third valve, which is disposed on a third flow path connecting the upstream side of the first valve in the first flow path and the downstream side of the second valve in the second flow path, and controls the release of the gas from the second nozzle; and

[0015] (d) A fourth valve, which is disposed on a fourth flow path connecting the upstream side of the second valve in the second flow path and the downstream side of the first valve in the first flow path, and controls the release of the gas from the first nozzle,

[0016] (e) The substrate processing apparatus is configured such that the difference between the average conductivity of the first valve and the fourth valve and the average conductivity of the second valve and the third valve is smaller than the difference between the conductivity of the first valve and the conductivity of the second valve.

[0017] Advantages of the Invention

[0018] According to the present disclosure, it is possible to eliminate the inequality in gas supply caused by the difference in conductivity of valves provided in the piping of multiple systems. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 FIG. is a schematic diagram showing a schematic structure of a substrate processing apparatus according to an embodiment of the present disclosure.

[0020] Figure 2 FIG. is a schematic structural diagram of a controller of a substrate processing apparatus according to an embodiment of the present disclosure, and is a block diagram showing a control system of the controller.

[0021] Figure 3 FIG. is a timing chart showing an example of the opening / closing timing of each valve in a substrate processing apparatus according to an embodiment of the present disclosure.

[0022] Figure 4 FIG. is a conceptual diagram showing an example of a method of selecting each valve.

[0023] Figure 5 FIG. is a conceptual diagram showing another example of a method of selecting each valve.

[0024] Figure 6 FIG. is a schematic diagram showing a schematic structure of a substrate processing apparatus according to another embodiment of the present disclosure.

[0025] Figure 7 FIG. is a schematic diagram showing a modified example of the structure of a valve by a cross section. DETAILED DESCRIPTION OF THE INVENTION

[0026] <Structure of Substrate Processing Apparatus>

[0027] Figure 1FIG. 0 is a schematic diagram showing the schematic structure of a substrate processing apparatus 1 according to an embodiment of the present disclosure. In addition, all the drawings used in the following description are schematic drawings, and the dimensional relationships of the respective elements shown in the drawings, the ratios of the respective elements, etc. do not necessarily conform to the actual situation. In addition, even between multiple drawings, the dimensional relationships of the respective elements, the ratios of the respective elements, etc. do not necessarily match.

[0028] In a processing chamber 2 for loading a substrate 31 and performing processing, two nozzles for releasing gas into the interior are provided, namely a first nozzle 56A and a second nozzle 56B. Gas is supplied from a gas supply source 72A to the first nozzle 56A, and gas is supplied from a gas supply source 72B to the second nozzle 56B. The gas flow path from the gas supply source 72A to the first nozzle 56A is a first flow path 47A. In addition, the gas flow path from the gas supply source 72B to the second nozzle 56B is a second flow path 47B. In the figure, the arrows labeled "A" and "B" respectively indicate the directions in which the gas flows in the first flow path 47A and the second flow path 47B. In addition, the gas supply sources 72A and 72B may be a single supply source. In addition, the gas supply sources 72A and 72B may be supply sources of the same type of gas or supply sources of different types of gas. On the other hand, an exhaust pipe 66 for discharging the processed gas is provided on the downstream side of the processing chamber 2.

[0029] The processing chamber 2 can be configured as a reaction tube in a vertical furnace device. At this time, a plurality of substrates 31 are arranged in multiple layers in the processing chamber, and the first nozzle 56A or the second nozzle 56B can jet gas from the side of the substrate 31 to form a gas flow parallel to the surface of each substrate 31. As an example, the first nozzle 56A or the second nozzle 56B can be configured to be rotationally symmetric with respect to a plane passing through the center of the substrate 31 and perpendicular to the plane of the substrate 31. By means of a vacuum pump connected to the exhaust pipe 66, the pressure in the processing chamber can be reduced to below 100 Pa.

[0030] In the first flow path 47A, with the gas supply source 72A as the most upstream and in the order from this to the most downstream first nozzle 56A, a mass flow controller (hereinafter referred to as "MFC") 100A, a storage valve 93A, a first buffer tank 95A, and a first valve 97A are serially provided. A pressure sensor 94A is provided in the flow path between the storage valve 93A and the first buffer tank 95A. In the second flow path 47B, with the gas supply source 72B as the most upstream and in the order from this to the most downstream second nozzle 56B, an MFC 100B, a storage valve 93B, a second buffer tank 95B, and a second valve 97B are serially provided. A pressure sensor 94B is provided in the flow path between the storage valve 93B and the second buffer tank 95B.

[0031] That is, a first valve 97A is provided in a first flow path 47A that connects a gas supply source 72A to a first nozzle 56A that releases gas into the processing chamber 2, and controls the release of gas from the first nozzle 56A. In addition, a second valve 97B is provided in a second flow path 47B that connects a gas supply source 72B to a second nozzle 56B that releases gas into the processing chamber 2, and controls the release of gas from the second nozzle 56B. In addition, the length and conductivity of the first flow path 47A from the gas supply source 72A to the first nozzle 56A may be equal to the length and conductivity of the second flow path 47B from the gas supply source 72B to the second nozzle 56B, respectively, but are not limited thereto. In addition, the gases supplied from the gas supply sources 72A and 72B may be source gases, inert gases, or carrier gases.

[0032] Moreover, a third valve 97C is provided in a third flow path 47C that is a bypass connecting the first flow path 47A upstream of the first valve 97A and the second flow path 47B downstream of the second valve 97B. The third valve 97C controls the release of gas from the upstream side of the first valve 97A in the first flow path 47A to the second nozzle 56B. A first buffer tank 95A is provided on the upstream side of the portion (i.e., the third flow path 47C) of the first flow path 47A that branches to the third valve 97C. On the other hand, a fourth valve 97D is provided in a fourth flow path 47D that is a bypass connecting the second flow path 47B upstream of the second valve 97B and the first flow path 47A downstream of the first valve 97A. The fourth valve 97D controls the release of gas from the upstream side of the second valve 97B in the second flow path 47B to the first nozzle 56A. A second buffer tank 95B is provided on the upstream side of the portion (i.e., the fourth flow path 47D) of the second flow path 47B that branches to the fourth valve 97D. These first valve 97A to fourth valve 97D are the lowermost valves among a plurality of valves including accumulation valves 93A and 93B provided between the gas supply sources 72A and 72B and the first nozzle 56A and the second nozzle 56B, and are also referred to as final valves. As a result, the relationship between each nozzle and the flow path is not fixed, but can be appropriately switched, and as a result, the amounts of gas supplied from the respective flow paths to the processing chamber 2 are equalized.

[0033] From the first valve 97A to the fourth valve 97D, the difference between the average conductivity of the first valve 97A and the fourth valve 97D and the average conductivity of the second valve 97B and the third valve 97C is selected to be less than the difference between the conductivity of the first valve 97A and the conductivity of the second valve 97B. Conductivity refers to the conductivity of the flow path inside the valve when the valve is open. For example, assuming that the piping conductivity of the first flow path 47A and the second flow path 47B is equal, when only the first valve 97A and the second valve 97B are provided, the difference in conductivity between the first valve 97A and the second valve 97B will be manifested as the difference in the flow rate or flow velocity of the gas released from the first nozzle 56A and the second nozzle 56B. To alleviate this situation, the third valve 97C and the fourth valve 97D selected as described above are respectively provided as the third flow path 47C and the fourth flow path 47D, which are bypasses of the first flow path 47A and the second flow path 47B. Thus, it is expected that the difference in the amount of gas released from the first nozzle 56A and the second nozzle 56B will be equalized.

[0034] In addition, the structure from the gas supply sources 72A, 72B to the first nozzle 56A and the second nozzle 56B may have symmetry, but is not limited thereto. Furthermore, the third flow path 47C and the fourth flow path 47D may be configured to intersect three-dimensionally without communicating with each other, and the conductivity as the flow path may be designed to be substantially equal, but is not limited thereto.

[0035] The first buffer tank 95A and the second buffer tank 95B have substantially equal volumes and respectively accumulate the gas sent from the gas supply sources 72A, 72B via the MFCs 100A, 100B. By releasing the gas in a time shorter than the accumulation time, a pulsed supply of a large flow rate called a flash flow is performed, and the surface of the substrate 31 is uniformly exposed to the gas. This is generally useful for performing a film forming process with good uniformity and step coverage on the substrate 31 having patterns such as deep grooves with a width smaller than the mean free path of the gas in a hot wall type processing chamber accompanied by a gas phase reaction. Therefore, it is preferable to perform the flash flow supply with an error of 1% or less with respect to the standard flow rate or flow velocity.

[0036] When the accumulation valves 93A, 93B are opened, the gas with a constant mass flow rate flows into the first buffer tank 95A and the second buffer tank 95B from the MFCs 100A, 100B respectively. In addition, when the gas accumulates in the first buffer tank 95A and the second buffer tank 95B, the pressure sensors 94A, 94B respectively detect the pressure rise in the flow path. When this pressure rise is detected, the controller 41 described later closes the accumulation valves 93A, 93B respectively, thereby stopping the gas from flowing into the first buffer tank 95A and the second buffer tank 95B.

[0037] By opening the first valve 97A, the gas accumulated in the first buffer tank 95A is released from the first nozzle 56A to the processing chamber 2 via the first flow path 47A, or by opening the third valve 97C, the gas accumulated in the first buffer tank 95A is released from the second nozzle 56B to the processing chamber 2 via the third flow path 47C and the second flow path 47B. On the other hand, by opening the second valve 97B, the gas accumulated in the second buffer tank 95B is released from the second nozzle 56B to the processing chamber 2 via the second flow path 47B, or by opening the fourth valve 97D, the gas accumulated in the second buffer tank 95B is released from the first nozzle 56A to the processing chamber 2 via the fourth flow path 47D and the first flow path 47A.

[0038] Here, for example, when the conductivities of the four valves are different from each other, if the valve with the highest conductivity is set as the first valve 97A, the valve with the lowest conductivity is set as the fourth valve 97D, and the remaining two valves are set as the second valve 97B and the third valve 97C, the proof is omitted, but the difference between the average value of the conductivities of the first valve 97A and the fourth valve 97D and the average value of the conductivities of the second valve 97B and the third valve 97C is always less than the difference between the conductivity of the first valve 97A and the conductivity of the second valve 97B. At this time, the conductivity of the first valve 97A is greater than the arithmetic mean of the conductivities from the first valve 97A to the fourth valve 97D, and the conductivity of the fourth valve 97D is less than the arithmetic mean. In addition, the conductivity of one of the second valve 97B and the third valve 97C may be greater than the arithmetic mean, and the conductivity of the other may be less than the arithmetic mean, but it is not limited thereto. In addition, at least one of the group of the first valve 97A and the second valve 97B and the group of the third valve 97C and the fourth valve 97D may be a switching valve, but it is not limited thereto. Or, at least one of the group of the first valve 97A and the second valve 97B and the group of the third valve 97C and the fourth valve 97D may be set as a conductivity valve with variable opening degree, and the conductivity valve may form a part of the MFC. Even in the case of including valves with unchangeable opening degrees, it is desirable to equalize the difference in the amounts of gas released from the first nozzle 56A and the second nozzle 56B.

[0039] <Controller>

[0040] In addition, the substrate processing apparatus 1 includes a controller 41 that controls the operations of each part. Figure 2The controller 41 is shown in its outline. The controller 41 as a control unit (control unit) is configured as a computer having a CPU (Central Processing Unit) 41a, a RAM (Random Access Memory) 41b, a storage device 41c, and an I / O port 41d. The RAM 41b, the storage device 41c, and the I / O port 41d are configured to be able to exchange data with the CPU 41a via an internal bus 41e. The controller 41 is configured to be connectable to an input / output device 411 configured as a touch panel, and an external storage device 412.

[0041] The storage device 41c is composed of, for example, a flash memory, a HDD (Hard Disk Drive), etc. A control program for controlling the operation of the substrate processing device 1, a process recipe recording a substrate processing sequence or condition, a calibration recipe, etc. are readable and stored in the storage device 41c. In addition, the RAM 41b is configured as a storage area (work area) for temporarily storing programs, data, etc. read by the CPU 41a.

[0042] In addition to being connected to the pressure sensors 94A, 94B and the MFCs 100A, 100B, the I / O port 41d is also connected to the solenoid valves 92A, 92B that open and close the storage valves 93A, 93B, respectively, the solenoid valve 96A that opens and closes the first valve 97A and the second valve 97B, and the solenoid valve 96B that opens and closes the third valve 97C and the fourth valve 97D. The first valve 97A to the fourth valve 97D can be composed of pneumatic valves. The first valve 97A and the second valve 97B are opened and closed in conjunction with the working fluid controlled by the solenoid valve 96A, and the third valve 97C and the fourth valve 97D are opened and closed in conjunction with the working fluid controlled by the solenoid valve 96B. With such a structure, the influence of the change in the operating speed of the solenoid valve can be reduced compared to the case where the solenoid valves are individually set. In addition, if it is not possible to release gas from the first nozzle 56A and the second nozzle 56B at the same time, it is necessary to set corresponding solenoid valves for the first valve 97A to the fourth valve 97D.

[0043] The controller 41 controls the storage valve 93A, the first valve 97A and the third valve 97C, and the storage valve 93B, the second valve 97B and the fourth valve 97D so that the gas is stored in the first buffer tank 95A and the second buffer tank 95B and released from the first buffer tank 95A and the second buffer tank 95B alternately and repeatedly.

[0044] In addition, the controller 41 is not limited to being configured as a dedicated computer and can be configured as a general-purpose computer. For example, by preparing an external storage device 412 (e.g., a semiconductor memory such as a USB memory or a memory card) storing the above program and installing the program in a general-purpose computer using the external storage device 412, the controller 41 of the present embodiment can be configured. In addition, the method for providing the program to the computer is not limited to providing it via the external storage device 412. For example, the program can be provided using a communication method such as the Internet or a dedicated line without providing the program via the external storage device 412. Further, the storage device 41c and the external storage device 412 are configured as computer-readable recording media. Hereinafter, these are simply collectively referred to as recording media. In this specification, when using the term "recording medium", it sometimes includes only the storage device 41c alone, sometimes only the external storage device 412 alone, or sometimes includes both.

[0045] <Opening and closing timing of each valve>

[0046] Next, with reference to Figure 3 the timing chart, the opening and closing timing of each valve in the substrate processing apparatus 1 of the present embodiment will be described. In addition, in Figure 3 "O" indicates a state where the valve is open, "C" indicates a state where the valve is closed, and "..." indicates an arbitrary state.

[0047] First, at time T1, the accumulation valves 93A and 93B are opened to accumulate in the buffer tanks 95A and 95B. Then, at time T2, the accumulation valves 93A and 93B are closed and maintained in a state of accumulating at a specified pressure. After that, at time T3, when the controller 41 opens the first valve 97A and the second valve 97B and closes the third valve 97C and the fourth valve 97D in a state where both the buffer tank 95A and the buffer tank 95B are filled with gas, the gas accumulated in the buffer tank 95A passes through the first valve 97A via the first flow path 47A and is released from the first nozzle 56A into the processing chamber 2. At the same time, the gas accumulated in the buffer tank 95B passes through the second valve 97B via the second flow path 47B and is released from the second nozzle 56B into the processing chamber 2. In addition, the gas release from the first nozzle 56A and the gas release from the second nozzle 56B do not need to be performed simultaneously, and an appropriate time difference can also be set (the same applies hereinafter). After that, at time T4, the first valve 97A to the fourth valve 97D are closed to exhaust the processing chamber 2. At this time, a purge gas or other film-forming gas can also be supplied from another supply system (not shown).

[0048] Next, at time T5, the accumulation valves 93A and 93B are opened to perform accumulation into the buffer tanks 95A and 95B. Thereafter, at time T6, the accumulation valves 93A and 93B are closed and maintained in a state of accumulating at a specified pressure. Thereafter, at time T7, when both the buffer tank 95A and the buffer tank 95B are in a state of being refilled with gas again, when the controller 41 opens the third valve 97C and the fourth valve 97D and closes the first valve 97A and the second valve 97B, the gas accumulated in the buffer tank 95A passes through the third valve 97A, the third flow path 47C, and the second flow path 47B, and is released from the second nozzle 56B into the processing chamber 2. At the same time, the gas accumulated in the buffer tank 95B passes through the fourth valve 97D, the fourth flow path 47D, and the first flow path 47A, and is released from the first nozzle 56A into the processing chamber 2. Time T8 is the same as time T4.

[0049] That is, the controller 41 included in the substrate processing apparatus 1 of the present embodiment is configured to be able to perform control such that, in a state where a specified amount of gas is accumulated in the first buffer tank 95A, the first valve 97A and the third valve 97C are selectively opened, and in a state where a specified amount of gas is accumulated in the second buffer tank 95B, the second valve 97B and the fourth valve 97D are selectively opened. In addition, the controller 41 is configured to be able to perform control such that the first valve 97A and the fourth valve 97D are alternately opened, for example, at a specified frequency, and the second valve 97B and the third valve 97C are alternately opened, for example, at a specified frequency. With such a configuration, the gas accumulated in the first buffer tank 95A and the gas accumulated in the second buffer tank 95B can both be alternately released into the processing chamber 2 via the first flow path 47A and the second flow path 47B.

[0050] By performing the series of operations from time T1 to time T8 one or more times, the substrate 31 is exposed to the gas, and substrate processing such as film formation is completed. In addition, this series of operations can be repeatedly performed multiple times while rotating the substrate 31. At this time, if the first process from time T1 to time T4 and the second process from time T5 to time T8 are simply alternated, the first process and the second process can be performed at the same frequency. When the first process and the second process are performed at a ratio of n1:n2 (where n1 and n2 are natural numbers), their frequencies can be made different. For example, if the second process is omitted every 100 times, the frequency ratio will be 100:99. When one of the first process and the second process is omitted, for the other process, compared to three or more consecutive times, it can be two consecutive processes that are dispersed, but it is not limited thereto.

[0051] <Selection of each valve>

[0052] Here, reference will be made to Figure 4 and Figure 5An example of selecting the first valve 97A to the fourth valve 97D from a set of valves including more than four valves obtained from a manufacturer is described. Here, as a premise of the description, it is assumed that the numerical range of the conductivity of the valves is determined as a specification, and the conductivity of each valve follows Figure 4 and Figure 5 the normal distribution shown. Additionally, Figure 4 and Figure 5 in the horizontal axis represents the value of conductivity obtained centered on the average value expressed in Cv, and the vertical axis represents the occurrence probability of each conductivity. It can be seen from the two figures that the occurrence probability of the conductivity of the average value is the highest, so as the conductivity increases or decreases from there, the occurrence probability decreases. Additionally, centered on the conductivity of the average value, the vertical lines in each figure divide the area of the probability density into four equal parts. The four regions divided by this vertical line are defined as the first region, the second region, the third region, and the fourth region from the high-probability side. Additionally, Cv1, Cv2, Cv3, and Cv4 in the figure represent the conductivities of the first valve 97A, the second valve 97B, the third valve 97C, and the fourth valve 97D, respectively.

[0053] In Figure 4 , Cv1 is selected from the second region, Cv2 is selected from the third region, Cv3 is selected from the first region, and Cv4 is selected from the fourth region. By making such selections, the allowable variations are distributed to multiple substrate processing apparatuses, and the uneven distribution of variations between the apparatuses is reduced. Here, the combined conductivity (Cv 1*4 ) of the first valve 97A and the fourth valve 97D is defined by the following formula 1, where p1 is the opening frequency of the first valve 97A.

[0054] Cv 1*4 = p1·Cv1 + (1 - p1)·Cv4...(Formula 1)

[0055] Furthermore, assuming that the opening frequency of the second valve 97B is p2, the combined conductivity (CV 2*3 ) of the second valve 97B and the third valve 97C can similarly be defined by the following formula 2.

[0056] Cv 2*3 = p2·Cv2 + (1 - p2)·Cv3...(Formula 2)

[0057] Here, the opening frequency can be defined as the ratio of the number of times the valve of interest is opened to the total number of times multiple valves supplying gas to the same nozzle are opened, and the combined conductivity can be said to be the total value of the weighted values of the conductivities of each valve according to the opening frequency of each valve. That is, as Figure 4As shown, by selecting the conductivity of each valve, the group of the first valve 97A and the fourth valve 97D and the group of the second valve 97B and the third valve 97C can be regarded as single valves having substantially average conductivity, respectively.

[0058] According to Figure 4 the structure, by selecting the valves such that the values of Cv3 - Cv2 and Cv1 - Cv4 are approximated, the degree of change in the release from the first nozzle 56A and the release from the second nozzle 56B can be made consistent, and the symmetry of the change can be made good. By selecting the valves such that the changes in Cv3 - Cv2 and Cv1 - Cv4 converge within a specified range among a plurality of substrate processing apparatuses, the reproducibility can be improved. Further, in order to further improve the reproducibility of substrate processing, the frequency can be set as follows. That is, in the first valve 97A and the fourth valve 97D through which gas flows in the same first flow path 47A, the ratio (i.e., p1:p4) of the frequency (p1) of opening the first valve 97A having a conductivity (Cv1) closer to the average value to the frequency (p4) of opening the fourth valve 97D having a conductivity (Cv4) farther from the average value can be set to an integer value (e.g., 5:2) that is actually approximated to the ratio (δ4:δ1) of the absolute value of the deviation (i.e., the distance from the average value) of the conductivity (Cv4) of the fourth valve 97D to the absolute value of the deviation of the conductivity (Cv1) of the first valve 97A (δ4 in the figure and δ1 in the figure), but is not limited thereto. That is, in the example of this figure, the first processing frequency of opening the first valve 97A is set to 2.5 times the second processing frequency of opening the fourth valve 97D. By such a setting, the combined conductivity of the first valve 97A and the fourth valve 97D can be made close to the average value.

[0059] On the other hand, in Figure 5Among them, Cv1 is selected from the second region, Cv2 (or Cv3) is selected from the first region, Cv3 (or Cv2) is selected from the fourth region, and Cv4 is selected from the third region. More preferably, the absolute value of the deviation δ1 of the conductivity (Cv1) of the first valve 97A and the absolute value of the deviation δ4 of the conductivity (Cv4) of the fourth valve 97D are selected to be approximately the same as each other. Similarly, the absolute value of the deviation δ2 of the conductivity (Cv2) of the second valve 97B and the absolute value of the deviation δ3 of the conductivity (Cv3) of the third valve 97C are selected to be approximately the same as each other. At this time, in the first valve 97A and the fourth valve 97D that allow gas to flow to the same first flow path 47A, the ratio of the frequency (F1) at which the first valve 97A is opened to the frequency (F4) at which the fourth valve 97D is opened (i.e., F1:F4) can be set to the ratio of the absolute value of the deviation of the conductivity (Cv4) of the fourth valve 97D to the absolute value of the deviation of the conductivity (Cv1) of the first valve 97A (i.e., δ4:δ1≈1:1), but it is not limited to this. That is, in the example of this figure, by alternately opening the first valve 97A and the fourth valve 97D at the same frequency, the combined conductivity of the first valve 97A and the fourth valve 97D can be made close to the average value. Here, even when the opening frequency of the first valve 97A is set to p1 (1 / 2 in the example of this figure), the combined conductivity (Cv 1*4 ) of the first valve 97A and the fourth valve 97D can be similarly defined by the above formula 1. In addition, assuming that the probability of opening the second valve 97B is set to p2 (1 / 2 in the example of this figure), the combined conductivity (Cv 2*3 ) of the second valve 97B and the third valve 97C can also be similarly defined using the above formula 2.

[0060] It can also be seen in the example shown in Figure 5 that for the first valve 97A and the fourth valve 97D, the fourth valve 97D is selected from four or more valves including the first valve 97A to the fourth valve 97D so as to have a conductivity closest to the value obtained by reversing the sign of the conductivity deviation of the first valve 97A. And for the second valve 97B and the third valve 97C, the third valve 97C is selected from four or more valves other than the first valve 97A and the fourth valve 97D so as to have a conductivity closest to the value obtained by reversing the sign of the conductivity deviation of the second valve 97B. In other words, the first valve 97A and the fourth valve 97D are selected from N valves (where N is an integer greater than or equal to 4) including the first valve 97A to the fourth valve 97D, and are selected from the valves corresponding to n before and n after (where n≤N / 2) starting from the median value when sorting the N valves by conductivity. And the second valve 97B and the third valve 97C are selected from the N valves, and are selected from the valves corresponding to m before and m after (where m≤N / 2) starting from the median value.

[0061] By selecting the conductivities of the respective valves in this way, the group of the first valve 97A and the fourth valve 97D and the group of the second valve 97B and the third valve 97C can be regarded as single valves having substantially average conductivities, respectively. As a result, the amounts of gas supplied from the respective nozzles can be equalized.

[0062] According to Figure 5 the structure, since the valves are selected in such a way that the differences in the conductivities of the simultaneously opened valves (i.e., Cv2 - Cv1 and Cv4 - Cv3) are approximated, the intensity relationship between the release from the first nozzle 56A and the release from the second nozzle 56B can be reversed or kept constant, thereby producing excellent time symmetry. By selecting the valves so as to keep these differences in conductivity within a specified range among a plurality of substrate processing apparatuses, reproducibility can be improved. In addition, an imbalance in the release intensity (flow rate or flow velocity) of the nozzles causes the generation of eddy currents in the processing chamber 2, and the pattern of these eddy currents affects the in-plane uniformity of the processing or the exhaust time of the gas. In this example, when Cv2 is selected from the first region, in the first process and the second process, the release intensities from the first nozzle 56A and the second nozzle 56B are reversed, the rotation direction of the eddy current is reversed, and the pattern of the eddy current is similar. On the other hand, when Cv2 is selected from the fourth region, the difference in the release intensity of each nozzle is almost constant, so the pattern of the eddy current remains similar.

[0063] In addition, Figure 4 and Figure 5 the valve selection method shown is only an example, and the present invention is not limited thereto. For example, Cv1 and Cv3 (or Cv2) are selected from the first region or the second region so as to be as close to each other as possible, and Cv4 and Cv2 (or Cv3) can be selected from the third region or the fourth region such that the polarity of the deviation is opposite to that of Cv1 and the absolute value of the deviation is as close to Cv1 as possible and as close to each other as possible. Valves that are as close to each other as possible can be selected as valves corresponding to two adjacent valves when, for example, a group of valves including a sufficiently large number of more than four valves is sorted in the order of conductivity. Thereby, the symmetry between the release from the first nozzle 56A and the release from the second nozzle 56B is good, the frequencies of the first process and the second process can be set to 1:1, and furthermore, if Cv1 and Cv2 are selected in an approximate manner, the generation of eddy currents can also be suppressed. In addition, although the changes in the gas supply amounts corresponding to the differences between Cv1 and Cv4 and between Cv2 and Cv3 vary among apparatuses, as long as the relationship between the gas supply amount (flow rate or flow velocity) and the film quality parameter (e.g., film thickness) can be linearly approximated, this influence will be limited.

[0064] In addition, the average value serving as the reference for the deviation is not limited to the average value calculated based on a set of valves to be selected, and can be arbitrarily set. For example, a substrate processing apparatus with proven performance can be used as the main apparatus, and the average value of the four valves from the first valve 97A to the fourth valve 97D used in the main apparatus can always be used.

[0065] Those skilled in the art will be able to understand that by selecting the first valve 97A to the fourth valve 97D as described above, the change in the composite conductivity can be made smaller than the change in each valve. For example, if the coefficient of variation obtained by dividing the standard deviation σ of the conductivity of a set of valves by the average value is set to 0.02, and all valves converging within ±2σ are used, then the maximum change between Cv1 and Cv2 (i.e., the difference between the maximum and the minimum) will be 8%. On the other hand, if four valves are selected from a number of valves sufficiently larger than four, the change in the composite conductivity can be reduced to less than 1%.

[0066] <Relationship with flow path conductivity>

[0067] Here, as described above, Figure 1 The first flow path 47A and the second flow path 47B shown may respectively have the same length and conductivity as each other, but in practice, different situations may exist. In this case, the first valve 97A to the fourth valve can be selected as follows.

[0068] First, the piping conductivity of the first flow path 47A is set to Cp1, and the piping conductivity of the second flow path 47B is set to Cp2. At this time, in order to ensure the difference between the piping conductivity (Cp1) of the first flow path 47A and the piping conductivity (Cp2) of the second flow path 47B, when using the composite conductivity (Cv 1*4 , referring to the above formula 1) of the first valve 97A and the fourth valve 97D and the composite conductivity (CV 2*3 , referring to the above formula 2) of the second valve 97B and the third valve 97C, the relationship shown in the following formula 3 needs to be established.

[0069] 2 / Cv 1*4 +1 / Cp1 = 2 / Cv 2*3 +1 / Cp2... (Formula 3)

[0070] The above formula 3 is transformed into the following formula 4.

[0071] 2 / Cv 1*4 -2 / Cv 2*3 = 1 / Cp2 - 1 / Cp1... (Formula 4)

[0072] Here, in order to compensate the right side of the above formula 4, that is, to compensate the difference between the reciprocal of the conductivity of the second flow path 47B and the reciprocal of the conductivity of the first flow path 47A, the difference between twice the reciprocal of the combined conductivity of the first valve 97A and the fourth valve 97D and twice the reciprocal of the combined conductivity of the second valve 97B and the third valve 97C can be set. Specifically, if the combined conductivity of the first valve 97A and the fourth valve 97D and the combined conductivity of the second valve 97B and the third valve 97C are set such that the right side of the above formula 4 becomes between 0 and 2×(1 / Cp2 - 1 / Cp1), the difference in conductivity between the first flow path 47A and the second flow path 47B can be compensated.

[0073] <Gas supply system>

[0074] The above substrate processing apparatus 1 is configured to include: (a) a first valve 97A provided on a first flow path 47A connecting a gas supply source 72A, 72B and a first nozzle 56A that releases gas into the processing chamber 2, and controlling the release of the gas from the first nozzle 56A; (b) a second valve 97B provided on a second flow path 47B connecting the gas supply source 72A, 72B and a second nozzle 56B that releases gas into the processing chamber 2, and controlling the release of the gas from the second nozzle 56B; (c) a third valve 97C provided on a third flow path 47C connecting the upstream side of the first valve 97A in the first flow path 47A and the downstream side of the second valve 97B in the second flow path 47B, and controlling the release of the gas from the second nozzle 56B; and (d) a fourth valve 97D provided on a fourth flow path 47D connecting the upstream side of the second valve 97B in the second flow path 47B and the downstream side of the first valve 97A in the first flow path 47A, and controlling the release of the gas from the first nozzle 56A. The gas supply system is configured such that (e) the difference between the average conductivity of the first valve 97A and the fourth valve 97D and the average conductivity of the second valve 97B and the third valve 97C is less than the difference between the conductivity of the first valve 97A and the conductivity of the second valve 97B. The substrate processing apparatus 1 can also be regarded as a gas supply system. With such a configuration, a gas supply system capable of equalizing the difference in the amount of gas released from the first nozzle 56A and the second nozzle 56B can be provided.

[0075] <Substrate processing method>

[0076] A substrate processing method, a substrate processing method performed using the above-described substrate processing apparatus 1, the substrate processing method including the following steps: (a) a step of releasing a gas into the processing chamber 2 through a first valve 97A, the first valve 97A being provided on a first flow path 47A that connects a gas supply source 72A, 72B to a first nozzle 56A that releases the gas into the processing chamber 2, controlling the release of the gas from the first nozzle 56A; (b) a step of releasing a gas into the processing chamber 2 through a second valve 97B, the second valve 97B being provided on a second flow path 47B that connects the gas supply source 72A, 72B to a second nozzle 56B that releases the gas into the processing chamber 2, controlling the release of the gas from the second nozzle 56B; (c) a step of releasing a gas into the processing chamber 2 through a third valve 97C, the third valve 97C being provided on a third flow path 47C that connects an upstream side of the first valve 97A in the first flow path 47A to a downstream side of the second valve 97B in the second flow path 47B, controlling the release of the gas from the second nozzle 56B; and (d) a step of releasing a gas into the processing chamber 2 through a fourth valve 97D, the fourth valve 97D being provided on a fourth flow path 47D that connects an upstream side of the second valve 97B in the second flow path 47B to a downstream side of the first valve 97A in the first flow path 47A, controlling the release of the gas from the first nozzle 56A, such that (a) to (d) are performed in a state where a difference between an average value of the conductivities of the first valve 97A and the fourth valve 97D and an average value of the conductivities of the second valve 97B and the third valve 97C is less than a difference between the conductivity of the first valve 97A and the conductivity of the second valve 97B. According to such a substrate processing method, during substrate processing, it is possible to equalize a difference in the amounts of gas released from the first nozzle 56A and the second nozzle 56B.

[0077] <Method of manufacturing a semiconductor device>

[0078] A method of manufacturing a semiconductor device, the method of manufacturing a semiconductor device being performed using the above-described substrate processing apparatus 1, the method of manufacturing a semiconductor device comprising: (a) a step of releasing a gas into the processing chamber 2 through a first valve 97A, the first valve 97A being provided on a first flow path 47A that connects a gas supply source 72A, 72B to a first nozzle 56A that releases the gas into the processing chamber 2, and controlling the release of the gas from the first nozzle 56A; (b) a step of releasing a gas into the processing chamber 2 through a second valve 97B, the second valve 97B being provided on a second flow path 47B that connects the gas supply source 72A, 72B to a second nozzle 56B that releases the gas into the processing chamber 2, and controlling the release of the gas from the second nozzle 56B; (c) a step of releasing a gas into the processing chamber 2 through a third valve 97C, the third valve 97C being provided on a third flow path 47C that connects an upstream side of the first valve 97A in the first flow path 47A to a downstream side of the second valve 97B in the second flow path 47B, and controlling the release of the gas from the second nozzle 56B; and (d) a step of releasing a gas into the processing chamber 2 through a fourth valve 97D, the fourth valve 97D being provided on a fourth flow path 47D that connects an upstream side of the second valve 97B in the second flow path 47B and a downstream side of the first valve 97A in the first flow path 47A, and controlling the release of the gas from the first nozzle 56A, such that (a) to (d) are performed in a state where the difference between the average conductivity of the first valve 97A and the fourth valve 97D and the average conductivity of the second valve 97B and the third valve 97C is less than the difference between the conductivity of the first valve 97A and the conductivity of the second valve 97B. According to such a method of manufacturing a semiconductor device, during the manufacture of a semiconductor device by processing a substrate 31, it is possible to equalize the difference in the amounts of gas released from the first nozzle 56A and the second nozzle 56B.

[0079] <Procedure>

[0080] In addition, the above-described substrate processing method or semiconductor device manufacturing method can be implemented by a program that causes a substrate processing apparatus 1 to execute: (a) a step of releasing a gas into the processing chamber 2 through a first valve 97A provided on a first flow path 47A that connects a gas supply source 72A, 72B to a first nozzle 56A for releasing the gas into the processing chamber 2, and controlling the release of the gas from the first nozzle 56A; (b) a step of releasing a gas into the processing chamber 2 through a second valve 97B provided on a second flow path 47B that connects the gas supply source 72A, 72B to a second nozzle 56B for releasing the gas into the processing chamber 2, and controlling the release of the gas from the second nozzle 56B; (c) a step of releasing a gas into the processing chamber 2 through a third valve 97C provided on a third flow path 47C that connects an upstream side of the first valve 97A in the first flow path 47A to a downstream side of the second valve 97B in the second flow path 47B, and controlling the release of the gas from the second nozzle 56B; and (d) a step of releasing a gas into the processing chamber 2 through a fourth valve 97D provided on a fourth flow path 47D that connects an upstream side of the second valve 97B in the second flow path 47B to a downstream side of the first valve 97A in the first flow path 47A, and controlling the release of the gas from the first nozzle 56A, such that (a) to (d) are performed in a state where a difference between an average value of the conductivities of the first valve 97A and the fourth valve 97D and an average value of the conductivities of the second valve 97B and the third valve 97C is less than a difference between the conductivity of the first valve 97A and the conductivity of the second valve 97B. According to such a program, during substrate processing by the substrate processing apparatus 1, it is possible to equalize a difference in the amounts of gas released from the first nozzle 56A and the second nozzle 56B.

[0081] <Other Embodiments>

[0082] In addition, the above-described embodiments can be modified as Figure 6 shown in another embodiment. That is, in Figure 6In another embodiment shown, the difference from the above embodiment is as follows: A fourth valve 97D is provided which bypasses the first valve 97A on the upstream side of the first valve 97A in the first flow path 47A and controls the fluid communication to the first nozzle 56A, and a third valve 97C is provided which bypasses the second valve 97B on the upstream side of the second valve 97B in the second flow path 47B and controls the fluid communication to the second nozzle 56B. The remaining structure is the same as that of the above embodiment. In this embodiment, if the difference between the average conductivity of the first valve 97A and the fourth valve 97D and the average conductivity of the second valve 97B and the third valve 97C can be set to be less than the difference between the conductivity of the first valve 97A and the conductivity of the second valve 97B, then, similarly to the above embodiment, the difference in the amount of gas released from the first nozzle 56A and the second nozzle 56B can be equalized.

[0083] <Deformation Example>

[0084] Figure 7 It is a cross-sectional view schematically showing a deformation example of the structure of the valve. In addition, although Figure 7 it is presented as representing the structure of the first valve 97A, the second valve 97B also has the same structure.

[0085] The first valve 97A is provided in the middle of the first flow path 47A, and in the housing 97A1, it includes: a diaphragm 97A4 which reversibly closes the flow path; a valve body 97A3 which serves as a plunger for moving the diaphragm 97A4 up and down; and an actuator 97A2 which moves the valve body 97A3 up and down. The actuator 97A2 is configured such that the position of the valve body 97A3 at the open position can be electrically fine-tuned by the controller 41. The opening and closing of the valve body 97A3 can be performed by the actuator 97A2, or a piston driven by an actuating fluid controlled by a solenoid valve 92A can also be provided separately. The above structure is the same as that of the above embodiment.

[0086] In this deformation example, a position sensor 97A5 coaxial with the valve body 97A3 is provided in the actuator 97A2. The position sensor 97A5 detects the position of the valve body 97A3 and converts the detected position into a value. That is, the first valve 97A and the second valve 97B each have a position sensor 97A5 for detecting the position of the valve body 97A3, and the controller 41 is configured to be able to read the value of the position sensor 97A5.

[0087] The conductivity of the first valve 97A or the second valve 97B may change over time due to repeated use. If it deviates from a preset value, in the substrate processing apparatus 1, there may be a deviation in the amount of gas released from each nozzle. In this case, the change amount of the position of the valve body 97A3 is detected by the position sensor 97A5 and fed back to the controller 41, so that the driving amount of the actuator 97A2 can be corrected by the solenoid valve 96A.

[0088] <Others>

[0089] As described above, the embodiments of the present disclosure have been specifically described. However, the present disclosure is not limited to the above embodiments, and various changes can be made without departing from its gist.

[0090] In addition, the above embodiments do not limit the specific manner of substrate processing. However, the present disclosure is applicable not only to the case where a batch-type substrate processing apparatus that processes a plurality of substrates at a time is used to process substrates, but also to a single-chamber substrate processing apparatus that processes one or more substrates at a time. Moreover, it can be applied in the case where a substrate is processed using a substrate processing apparatus having a hot-wall type processing furnace or in the case where a substrate is processed using a substrate processing apparatus having a cold-wall type processing furnace.

[0091] Even when using these substrate processing apparatuses, each process can be executed under the same processing sequence and processing conditions as in the above embodiments and modification examples, and the same effects as in the above embodiments and modification examples can be obtained.

[0092] The above embodiments and modification examples can be used in appropriate combination. The processing sequence and processing conditions at this time can be the same as, for example, the processing sequence and processing conditions of the above embodiments and modification examples.

Claims

1. A substrate processing apparatus, characterized in that, Comprising: (a) A first valve, which is provided on a first flow path connecting a gas supply source and a first nozzle for releasing gas into a processing chamber, and controls the release of the gas from the first nozzle; (b) A second valve, which is provided on a second flow path connecting the gas supply source and a second nozzle for releasing gas into the processing chamber, and controls the release of the gas from the second nozzle; (c) A third valve, which is provided on a third flow path connecting the upstream side of the first valve in the first flow path and the downstream side of the second valve in the second flow path, and controls the release of the gas from the second nozzle; And (d) A fourth valve, which is provided on a fourth flow path connecting the upstream side of the second valve in the second flow path and the downstream side of the first valve in the first flow path, and controls the release of the gas from the first nozzle, (e) The substrate processing apparatus is configured such that the difference between the average conductivity of the first valve and the fourth valve and the average conductivity of the second valve and the third valve is less than the difference between the conductivity of the first valve and the conductivity of the second valve.

2. The substrate processing apparatus according to claim 1, wherein At least one of the group of the first valve and the second valve and the group of the third valve and the fourth valve is a switching valve.

3. The substrate processing apparatus according to claim 1, wherein At least one of the group of the first valve and the second valve and the group of the third valve and the fourth valve is a conductive valve, and the conductivity is the conductivity when the conductive valve is fully open.

4. The substrate processing apparatus according to claim 1, wherein The first valve to the fourth valve are provided at the most downstream side among a plurality of valves provided between the gas supply source and the first nozzle and the second nozzle.

5. The substrate processing apparatus according to claim 1, wherein The substrate processing apparatus further comprises: A first buffer tank, which is provided upstream of the portion where the first flow path branches to the third valve; A second buffer tank, which is provided upstream of the portion where the second flow path branches to the fourth valve.

6. The substrate processing apparatus according to claim 1, wherein The third flow path and the fourth flow path have substantially equal conductivity and are configured to be three-dimensionally crossed.

7. The substrate processing apparatus according to claim 5, wherein The substrate processing apparatus further comprises: a controller configured to be able to perform the following control: alternatively opening the first valve and the third valve when a predetermined amount of gas is accumulated in the first buffer tank, and alternatively opening the second valve and the fourth valve when a predetermined amount of gas is accumulated in the second buffer tank.

8. The substrate processing apparatus according to claim 1, wherein The substrate processing apparatus further comprises: a controller configured to be able to perform the following control: alternatively opening the first valve and the fourth valve, and alternatively opening the second valve and the third valve.

9. The substrate processing apparatus according to claim 8, wherein The conductance of the first valve is greater than an arithmetic mean of conductances of the first valve to the fourth valve, and the conductance of the fourth valve is less than the arithmetic mean.

10. The substrate processing apparatus according to claim 9, wherein: One of the second valve and the third valve has a conductance greater than the arithmetic mean, and the other has a conductance less than the arithmetic mean.

11. The substrate processing apparatus according to claim 8, wherein: The ratio of the frequency at which the first valve is opened to the frequency at which the fourth valve is opened is set to an integer ratio approximating the ratio of the absolute value of the deviation of the conductance of the fourth valve to the absolute value of the deviation of the conductance of the first valve.

12. The substrate processing apparatus according to claim 8, wherein: With respect to the first valve and the fourth valve, the fourth valve is selected to have a conductivity closest to a value obtained by reversing the sign of a deviation in conductivity of the first valve from among four or more valves including the first valve to the fourth valve. Regarding the second valve and the third valve, the third valve is selected from among the four or more valves excluding the first valve and the fourth valve to have a conductance closest to a value obtained by inverting the sign of the deviation in conductance of the second valve.

13. The substrate processing apparatus according to claim 8, wherein: The controller is configured to perform control to alternately open the first valve and the fourth valve, and alternately open the second valve and the third valve.

14. The substrate processing apparatus according to claim 8, wherein: The first to fourth valves are pneumatic valves, and are configured such that the first valve and the second valve are opened and closed in conjunction with each other, and the third valve and the fourth valve are opened and closed in conjunction with each other.

15. The substrate processing apparatus according to claim 8, wherein: The substrate processing apparatus sets a difference between an inverse of a combined conductance of the first valve and the fourth valve and an inverse of a combined conductance of the second valve and the third valve so as to compensate for a difference between an inverse of conductance of the second flow path and an inverse of conductance of the first flow path.

16. The substrate processing apparatus according to claim 8, wherein: The first valve and the second valve each include a position sensor for detecting a position of a valve body, and the controller is configured to be able to read a value of the position sensor.

17. A gas supply system, characterized in that, have: (a) a first valve provided in a first flow path connecting a gas supply source and a first nozzle releasing gas into a processing chamber, and controlling the release of the gas from the first nozzle; (b) a second valve disposed on a second flow path connecting the gas supply source and a second nozzle releasing gas into the processing chamber, and controlling the release of the gas from the second nozzle; (c) a third valve provided on a third flow path connecting an upstream side of the first valve in the first flow path and a downstream side of the second valve in the second flow path, and controlling release of the gas from the second nozzle; as well as (d) A fourth valve, which is provided on a fourth flow path connecting the upstream side of the second valve in the second flow path to the downstream side of the first valve in the first flow path, and controls the release of the gas from the first nozzle. (e) The gas supply system is configured such that the difference between the average conductivity of the first valve and the fourth valve and the average conductivity of the second valve and the third valve is less than the difference between the conductivity of the first valve and the conductivity of the second valve.

18. A substrate processing method, characterized in that Comprising: (a) A step of releasing a gas into the processing chamber through a first valve, which is provided on a first flow path connecting a gas supply source to a first nozzle for releasing the gas into the processing chamber, and controls the release of the gas from the first nozzle; (b) A step of releasing a gas into the processing chamber through a second valve, which is provided on a second flow path connecting the gas supply source to a second nozzle for releasing the gas into the processing chamber, and controls the release of the gas from the second nozzle; (c) A step of releasing a gas into the processing chamber through a third valve, which is provided on a third flow path connecting the upstream side of the first valve in the first flow path to the downstream side of the second valve in the second flow path, and controls the release of the gas from the second nozzle; And (d) A step of releasing a gas into the processing chamber through a fourth valve, which is provided on a fourth flow path connecting the upstream side of the second valve in the second flow path to the downstream side of the first valve in the first flow path, and controls the release of the gas from the first nozzle. Under the condition that the difference between the average conductivity of the first valve and the fourth valve and the average conductivity of the second valve and the third valve is less than the difference between the conductivity of the first valve and the conductivity of the second valve, the steps (a) to (d) are performed.

19. A method of manufacturing a semiconductor device, characterized in that, Providing: (a) A step of releasing a gas into the processing chamber through a first valve, which is provided on a first flow path connecting a gas supply source to a first nozzle for releasing the gas into the processing chamber, and controls the release of the gas from the first nozzle; (b) A step of releasing a gas into the processing chamber through a second valve, which is provided on a second flow path connecting the gas supply source to a second nozzle for releasing the gas into the processing chamber, and controls the release of the gas from the second nozzle; (c) A step of releasing a gas into the processing chamber through a third valve, which is provided on a third flow path connecting the upstream side of the first valve in the first flow path to the downstream side of the second valve in the second flow path, and controls the release of the gas from the second nozzle; And (d) A step of releasing a gas into the processing chamber through a fourth valve, which is provided on a fourth flow path connecting the upstream side of the second valve in the second flow path to the downstream side of the first valve in the first flow path, and controls the release of the gas from the first nozzle. Perform (a) to (d) in a state where the difference between the average conductivity of the first valve and the fourth valve and the average conductivity of the second valve and the third valve is less than the difference between the conductivity of the first valve and the conductivity of the second valve.

20. A program, characterized in that, Cause a substrate processing apparatus to execute, by a computer: (a) A step of releasing a gas into a processing chamber through a first valve, the first valve being provided in a first flow path connecting a gas supply source to a first nozzle that releases the gas into the processing chamber, and controlling the release of the gas from the first nozzle; (b) A step of releasing a gas into the processing chamber through a second valve, the second valve being provided in a second flow path connecting the gas supply source to a second nozzle that releases the gas into the processing chamber, and controlling the release of the gas from the second nozzle; (c) A step of releasing a gas into the processing chamber through a third valve, the third valve being provided in a third flow path connecting the upstream side of the first valve in the first flow path to the downstream side of the second valve in the second flow path, and controlling the release of the gas from the second nozzle; and (d) A step of releasing a gas into the processing chamber through a fourth valve, the fourth valve being provided in a fourth flow path connecting the upstream side of the second valve in the second flow path to the downstream side of the first valve in the first flow path, and controlling the release of the gas from the first nozzle, Perform (a) to (d) in a state where the difference between the average conductivity of the first valve and the fourth valve and the average conductivity of the second valve and the third valve is less than the difference between the conductivity of the first valve and the conductivity of the second valve.

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