Substrate support and transfer apparatus for substrate deformation

Abstract

Embodiments of the present disclosure relate to substrate supports, transfer apparatuses, processing chambers, and related components and methods for substrate deformation (e.g., bending). In one or more implementations, a substrate used in connection with the present disclosure may be deformed (e.g., bent) prior to and / or during processing, such as epitaxial deposition. In one implementation, a substrate support suitable for use in a semiconductor manufacturing operation includes a support body. The support body includes an outer surface, a recessed surface recessed relative to the outer surface, and a pocket surface between the outer surface and the recessed surface. The recessed surface and the pocket surface at least partially define a pocket of the support body. The support body includes a plurality of supports protruding relative to the recessed surface. The substrate support includes a barrier layer interfacing with the plurality of supports. The barrier layer includes a plurality of barrier layer supports.

Description

Technical Field

[0001] Embodiments of the present disclosure relate to substrate supports, transfer devices, processing chambers, and related components and methods for substrate deformation (e.g., bending). In one or more implementations, substrates used in connection with the present disclosure may be deformed (e.g., bent) before and / or during processing (such as epitaxial deposition). Background Art

[0002] Semiconductor substrates are processed for a wide range of applications, including the fabrication of integrated and micro components. Substrates can be deformed (e.g., bent), and the deformation can cause temperature non-uniformities throughout the processing, which can lead to deposition non-uniformities. As an example, the deformation can change the amount of surface area of the substrate that contacts other components. As another example, the deformation can change the distance of portions of the substrate relative to other components. Relatively complex deposition operations (such as high-temperature epitaxial deposition operations) exacerbate these problems.

[0003] Accordingly, there is a need for improved substrate supports, transfer devices, processing chambers, and related components and methods that account for deformation and facilitate reducing deposition non-uniformities. Summary of the Invention

[0004] Embodiments of the present disclosure relate to substrate supports, transfer devices, processing chambers, and related components and methods for substrate deformation (e.g., bending). In one or more implementations, substrates used in connection with the present disclosure may be deformed (e.g., bent) before and / or during processing (such as, epitaxial deposition).

[0005] In one implementation, a substrate support suitable for semiconductor manufacturing operations includes a support body. The support body includes an outer surface, a recessed surface that is recessed relative to the outer surface, and a cavity surface between the outer surface and the recessed surface. The recessed surface and the cavity surface at least partially define a cavity of the support body. The support body includes a plurality of supports that protrude relative to the recessed surface. The substrate support includes a barrier layer that interfaces with the plurality of supports. The barrier layer includes a plurality of barrier layer supports.

[0006] In one implementation, a processing chamber suitable for semiconductor manufacturing includes a window that at least partially defines a processing volume, a plurality of heat sources configured to heat the processing volume, and a substrate support disposed in the processing volume. The substrate support includes a support body. The support body includes an outer surface, a recessed surface that is recessed relative to the outer surface, a cavity surface between the outer surface and the recessed surface, and a plurality of supports that protrude relative to the recessed surface. The substrate support includes a barrier layer that interfaces with the plurality of supports. The barrier layer includes a plurality of barrier layer supports.

[0007] In one implementation, a transfer device for moving a substrate in semiconductor manufacturing includes a transfer body. The transfer body includes an outer surface, an arcuate recessed surface recessed relative to the outer surface, and a cavity surface between the outer surface and the arcuate recessed surface. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] In order to understand in detail the manner of the above-described features of the present disclosure, a more specific description of the present disclosure summarized above can be obtained by referring to the embodiments, some of which are shown in the drawings. However, it should be noted that the drawings only show exemplary embodiments and are not considered to limit its scope, and other equally effective embodiments are allowed.

[0009] Figure 1 is a schematic side cross-sectional view of a processing chamber according to one implementation.

[0010] Figure 2 is according to one implementation Figure 1 schematic side cross-sectional view of the substrate support shown.

[0011] Figure 3 is according to one implementation Figure 2 schematic side view of the barrier layer shown.

[0012] Figure 4 is according to one implementation Figures 2 to 3 schematic top view of the barrier layer shown.

[0013] Figure 5 is according to one implementation Figures 2 to 4 schematic bottom view of the barrier layer shown.

[0014] Figure 6 is according to one implementation Figure 2 schematic top view of the support body shown.

[0015] Figure 7 is a schematic side cross-sectional view of a substrate support according to one implementation.

[0016] Figure 8 is a schematic perspective view of a transfer device according to one implementation.

[0017] Figure 9 is according to one implementation Figure 8 schematic side cross-sectional view of the transfer device shown.

[0018] Figure 10 is a schematic side cross-sectional view of a transfer device according to one implementation.

[0019] Figure 11 FIG. 0 is a schematic block diagram view of a method of processing a substrate for semiconductor manufacturing according to one implementation.

[0020] For ease of understanding, where possible, the same reference numerals have been used to denote the same elements as in the drawings. It is contemplated that elements and features of one embodiment may be beneficially incorporated into other embodiments without further recitation. DETAILED DESCRIPTION

[0021] Embodiments of the present disclosure relate to substrate supports, transfer devices, processing chambers, and related components and methods for substrate deformation (e.g., bending). In one or more implementations, a substrate used in connection with the present disclosure may be deformed (e.g., bent) before and / or during processing (such as epitaxial deposition).

[0022] For example, it may relate to deformation associated with three-dimensional dynamic random access memory (3D DRAM) deposition operations or epitaxial deposition operations that deposit relatively thick films that may cause striae.

[0023] Figure 1 FIG. 16 is a schematic side cross-sectional view of a processing chamber 100 according to one implementation. The processing chamber 100 is a deposition chamber. In one embodiment that may be combined with other embodiments, the processing chamber 100 is an epitaxial deposition chamber. The processing chamber 100 is configured to grow an epitaxial film on a substrate 102. The processing chamber 100 generates a cross-flow of precursors through a top surface 150 of the substrate 102.

[0024] The processing chamber 100 includes an upper body 156, a lower body 148 disposed below the upper body 156, and a flow module 112 disposed between the upper body 156 and the lower body 148. The upper body 156, the flow module 112, and the lower body 148 form a chamber body. Disposed within the chamber body are a substrate support 106, an upper window 108 (such as an upper dome), a lower window 110 (such as a lower dome), a plurality of upper heat sources 141, and a plurality of lower heat sources 143. As shown, a controller 120 communicates with the processing chamber 100 and is configured to control processes and methods, such as the operations of the methods described herein. The controller 120 and the processing chamber 100 may be part of a substrate processing system.

[0025] In Figure 1 the illustrated implementation, the heat sources 141, 143 are lamps. Other heat sources, such as resistance heaters, light emitting diodes (LEDs), and / or lasers, are also contemplated.

[0026] The substrate support 106 is disposed between the upper window 108 and the lower window 110. The substrate support 106 includes a support surface 123 for supporting the substrate 102. A plurality of upper heat sources 141 are disposed between the upper window 108 and the cover 154. The plurality of upper heat sources 141 form part of the upper heating module 155. The cover 154 may include a plurality of sensors (such as pyrometers) disposed therein or thereon for measuring the temperature within the processing chamber 100. A plurality of lower heat sources 143 are disposed between the lower window 110 and the chamber bottom plate 152. The plurality of lower heat sources 143 form part of the lower heating module 145. The upper window 108 is an upper dome and is at least partially formed of an energy transmissive material (such as quartz). The lower window 110 is a lower dome and is at least partially formed of an energy transmissive material (such as quartz).

[0027] The process volume 136 and the purge volume 138 are located between the upper window 108 and the lower window 110. The process volume 136 and the purge volume 138 are part of an internal volume that is at least partially defined by the upper window 108, the lower window 110, and one or more gaskets 163. The upper window 108 at least partially defines the process volume 136.

[0028] The window 108 includes a concave or flat first surface 111 (in the Figure 1 illustrated implementation, the first surface 111 is flat). The upper window 108 includes a raised second surface 113. The second surface 113 faces the substrate support 106. Other shapes for the upper window 108 are contemplated by the present disclosure. The upper window 108 includes an inner section 122 and an outer section 124. The first surface 111 and the second surface 113 are at least part of the inner section 122. The inner section 122 is transparent and the outer section 124 is opaque. The outer section 124 is at least partially received within one or more sidewalls of the processing chamber 100 (such as in the flow module 112).

[0029] The internal volume has a substrate support 106 disposed therein. The substrate support 106 includes a top surface for supporting the substrate 102. The substrate support 106 is connected to the shaft 118. In one or more embodiments, the substrate support 106 is connected to the shaft 118 via a plurality of arms 119 connected to the shaft 118. The shaft 118 is connected to the motion assembly 121. The motion assembly 121 includes one or more actuators and / or adjustment devices that provide movement and / or adjustment for the shaft 118 and / or the substrate support 106 within the process volume 136.

[0030] The substrate support 106 may include a lift rod hole 107 disposed therein. The lift rod hole 107 is sized to accommodate a lift rod 132 for lifting the substrate 102 from the substrate support 106 before or after a deposition process. When the substrate support 106 is lowered from the processing position to the transfer position, the lift rod 132 may rest on a lift rod stopper 134. The lift rod stopper 134 may be coupled to the second shaft 104.

[0031] The flow module 112 includes a plurality of gas inlets 114, a plurality of purge gas inlets 164, and one or more exhaust outlets 116. The plurality of gas inlets 114 and the plurality of purge gas inlets 164 are disposed on a side of the flow module 112 opposite the one or more exhaust outlets 116. One or more flow guiding devices 117 are disposed below the plurality of gas inlets 114 and the one or more exhaust outlets 116. The one or more flow guiding devices may include, for example, one or more preheating rings. One or more flow guiding devices 117 are disposed above the purge gas inlets 164. One or more gaskets 163 are disposed on an inner surface of the flow module 112 and protect the flow module 112 from reactive gases used during deposition operations and / or cleaning operations. The gas inlets 114 and the purge gas inlets 164 are each positioned to flow gas parallel to a top surface 150 of the substrate 102 disposed within the process volume 136. The gas inlets 114 are fluidly connected to one or more process gas sources 151 and one or more cleaning gas sources 153. The purge gas inlets 164 are fluidly connected to one or more purge gas sources 162 and / or one or more cleaning gas sources 153. The one or more exhaust outlets 116 are fluidly connected to an exhaust pump 157. One or more process gases supplied using one or more process gas sources 151 may include one or more reactive gases (such as one or more of silicon (Si), phosphorus (P), and / or germanium (Ge)) and / or one or more carrier gases (such as one or more of nitrogen (N2) and / or hydrogen (H2)). One or more purge gases supplied using one or more purge gas sources 162 may include one or more inert gases (such as one or more of argon (Ar), helium (He), hydrogen (H2), and / or nitrogen (N2)). One or more cleaning gases supplied using one or more cleaning gas sources 153 may include one or more of hydrogen (H) and / or chlorine (Cl). In one embodiment that may be combined with other embodiments, one or more process gases include silicon phosphide (SiP) and / or phosphine (PH3), and one or more cleaning gases include hydrochloric acid (HCl).

[0032] One or more exhaust outlets 116 are further connected to or include an exhaust system 178. The exhaust system 178 is fluidly connected to the one or more exhaust outlets 116 and an exhaust pump 157. The exhaust system 178 may assist in the controlled deposition of a layer on the substrate 102. The exhaust system 178 is disposed on the opposite side of the processing chamber 100 relative to the flow module 112.

[0033] The controller 120 includes a central processing unit (CPU), a memory containing instructions, and support circuitry for the CPU. The controller 120 controls various items directly or via other computers and / or controllers. In one or more embodiments, the controller 120 is communicatively coupled to a dedicated controller and the controller 120 serves as a central controller.

[0034] The controller 120 is in any form of a general computer processor for controlling various substrate processing chambers and equipment and sub-processors thereon or therein in an industrial environment. The memory or non-transitory computer-readable medium is one or more of readily available memories such as random access memory (RAM), dynamic random access memory (DRAM), static RAM (SRAM), and synchronous dynamic RAM (SDRAM (e.g., DDR1, DDR2, DDR3, DDR3L, LPDDR3, DDR4, LPDDR4, etc.)), read only memory (ROM), floppy disks, hard disks, pen drives, or any other form of local or remote digital memory. The support circuitry of the controller 120 is coupled to the CPU to support the CPU (processor). The support circuitry includes caches, power supplies, clock circuits, input / output circuitry systems, and subsystems, etc. Operating parameters (such as the temperature of the substrate 102, the temperature of the substrate support 106, and / or the pressure and / or temperature of the process gas) and operations are stored in the memory as software routines that are executed or called to turn the controller 120 into a specific-purpose controller to control the operations of the various chambers / modules described herein. The controller 120 is configured to perform any of the operations described herein. The instructions stored in the memory cause one or more operations of method 1100 (described below) to be performed when executed.

[0035] The various operations described herein (such as the operations of method 1100) may be performed automatically using the controller 120 or may be performed automatically or manually by certain operations performed by a user.

[0036] The controller 120 is configured to control the rotational position, heating, and the gas flow through the processing chamber 100 by providing outputs to control devices for the heat sources 141, 143, the gas flow, and the motion assembly 121. The control devices include control devices for the upper heat source 141, the lower heat source 143, the process gas source 151, the purge gas source 162, the motion assembly 121, and the exhaust pump 157.

[0037] The controller 120 is configured to adjust the outputs to the control devices based on sensor readings, system models, and stored readings and calculations. The controller 120 includes embedded software and compensation algorithms for calibrating measurement values. The controller 120 may include one or more machine learning algorithms and / or artificial intelligence algorithms that estimate optimized parameters for deposition operations, purge operations, and / or cleaning operations. One or more machine learning algorithms and / or artificial intelligence algorithms may use, for example, regression models (such as linear regression models) or clustering techniques to estimate the optimized parameters. The algorithms may be unsupervised or supervised.

[0038] A substrate, such as substrate 102, is transferred into and out of the interior volume of the processing chamber 100 via a transfer gate 137, such as a slit valve. When the transfer gate 137 is open, a transfer device (on which the substrate is supported) may extend into the interior volume via the transfer gate 137 such that the lift rod 132 can lift the substrate from the transfer device and land the substrate on the substrate support 106 for processing. After processing, the lift pins 132 can lift the substrate from the substrate support 106 and land the substrate on the transfer device, and the transfer device may retract via the open transfer gate 137 to remove the substrate from the processing chamber 100.

[0039] Figure 2 is according to one implementation Figure 1 The schematic side cross-sectional view of the substrate support 106 shown.

[0040] The substrate support 106 includes a support body 210. In one or more embodiments, the support body 210 is part of a base (such as a pedestal). The support body 210 includes an outer surface 211, a recessed surface 212 that is recessed relative to the outer surface 211, and a cavity surface 213. The cavity surface 213 is located between the outer surface 211 and the recessed surface 212. The recessed surface 212 and the cavity surface 213 at least partially define a cavity 214 of the support body 210. The cavity has a trapezoidal cross-sectional shape. The substrate support 106 includes a plurality of supports 215 that project relative to the recessed surface 212 and extend into the cavity 214. In one or more embodiments, each of the plurality of supports 215 is hemispherical (such as hemispherical or semi-ovoid). The depth D1 of the cavity 214 is less than 1.0 millimeter. In one or more embodiments, the depth D1 is in the range of 0.7 millimeter to 0.8 millimeter. In one or more embodiments, the depth D1 is approximately 0.75 millimeter. The support body 210 includes a plurality of gas openings 207 that extend between the cavity surface 213 and a second outer surface 208 of the support body 210. The second outer surface 208 is opposite the outer surface 211. The plurality of gas openings 207 facilitate the inflow and outflow of flowing gas in the purge volume 138 into and out of a space 209 located between the recessed surface 212 and the back surface of the substrate 102. The gas in the space 209 can help reduce or eliminate process gas flowing into the space and depositing on the back surface of the substrate 102. The gas in the space 209 can be used to center the substrate 102 relative to the support body 210. The gas can include a purge gas and / or a cleaning gas. Gravity can be used to guide the substrate 102 along the cavity surface 213 to position and / or center the substrate 102 relative to the support body 210.

[0041] The cavity surface 213 has a surface roughness (Ra) of less than 15 micro-inches. In one or more embodiments, the surface roughness (Ra) is in the range of 6 micro-inches to 12 micro-inches. The surface roughness (Ra) can be formed, for example, by polishing the cavity surface 213. In one or more embodiments, the polishing is mechanical polishing. Other polishing techniques (such as chemical polishing or chemical-mechanical polishing) are contemplated. Other surface treatment techniques for forming the surface roughness (Ra) are contemplated.

[0042] The recess surface 213 is conical and has a cone angle A1 relative to the recessed surface 212. In one or more embodiments, the cone angle A1 is 45 degrees or greater, such as 60 degrees or greater. In one or more embodiments, the cone angle A1 is in the range of 45 degrees to 90 degrees, such as in the range of 70 degrees to 85 degrees. The cone angle A1 facilitates polishing of the recess surface 213, reduces or eliminates ingress of process gas behind the substrate 102, reduces misalignment of the substrate 102 during processing, reduces or eliminates the contact area between the substrate 102 and the support body 210, thermal uniformity, and increases deposition uniformity. The present disclosure contemplates that the recess surface 213 may be arcuate.

[0043] The substrate support 106 includes a barrier layer 230 that interfaces with a plurality of supports 215. The barrier layer 230 can act as a thermal barrier between the substrate 102 and the support body 210, enabling thermal uniformity on the substrate 102 and facilitating an increase in deposition uniformity on the substrate 102. The barrier layer 230 includes a barrier layer plate 231 and a plurality of barrier layer supports 235 that protrude from a first side of the barrier layer plate 231. In one or more embodiments, each of the plurality of barrier layer supports 235 contacts at least two of the plurality of supports 215 of the support body 210. In one or more embodiments, each of the plurality of barrier layer supports 235 contacts three or more (such as four or more) of the plurality of supports 215 of the support body 210. The barrier layer 230 includes a plurality of second barrier layer supports 240 that protrude from a second side of the barrier layer plate 231. The second barrier layer supports 240 support the substrate 102, such as during epitaxial deposition processing of the substrate 102. In one or more embodiments, each of the plurality of barrier layer supports 235 and each of the plurality of second barrier layer supports 240 are hemispherical. In one or more embodiments, the support body 210 and the barrier layer 230 are each formed of silicon carbide (SiC) or graphite coated with SiC.

[0044] The recessed surface 212 has an outer diameter OR1. A plurality of barrier layer supports 235 and a plurality of second barrier layer supports 240 are aligned with a radial position 236 that is a ratio of the outer diameter OR1. In one or more embodiments, the ratio is in the range of 0.4 to 0.6, such as in the range of 0.45 to 0.55. In one or more embodiments, the ratio is 0.5. In one or more embodiments, the radial position 236 is aligned with the geometric centers of the barrier layer supports 235 and the second barrier layer supports 240. Taking into account the outer diameter OR1 and the radial position 236 relative to the geometric center 203 of the support body 210. The barrier layer supports 235 and the second barrier layer supports 240 are disposed at a radius R1 relative to the geometric center 203. The radius R1 is a ratio of the radius R2 of the substrate 102. In one or more embodiments, the radius R1 is a radius ratio of the radius R2 of the substrate 102, and the radius ratio is in the range of 0.4 to 0.6, such as in the range of 0.45 to 0.55. In one or more embodiments, the radius ratio is 0.5. In one or more embodiments, the radius R1 is in the range of 65 mm to 85 mm, such as 75 mm. The radial position 236 of the barrier layer supports 235, 240 may be aligned with portions of the substrate 102 that remain substantially stationary during deformation due to processing, which is beneficial for uniformity and more consistently maintains a reduced or eliminated contact area between the substrate 102 and the support body 210.

[0045] Each of the barrier layer supports 235 may include one or more outer arcuate surfaces that contact one or more outer arcuate surfaces of the support 215. The one or more outer arcuate surfaces of the barrier layer supports 235 have a radius of curvature that is substantially equal to (such as a difference of 10% or less relative to this radius of curvature) the radius of curvature of the one or more outer arcuate surfaces of the support 215. Each of the second barrier layer supports 240 may include one or more outer arcuate surfaces. The one or more outer arcuate surfaces of the second barrier layer supports 240 have a radius of curvature that is substantially equal to (such as a difference of 10% or less relative to this radius of curvature) the radius of curvature of the one or more outer arcuate surfaces of the barrier layer supports 235. The radius of curvature and melting help to reduce the contact area between the barrier layer 230 and the support body 210, which helps to increase thermal uniformity and deposition uniformity.

[0046] In Figure 2 the implementation shown, the substrate 102 has an initial deformation (e.g., in the form of pre-bending into the processing chamber 100) before processing. During processing, the substrate 102 may deform (e.g., bend), and the substrate 102 may deform in the opposite direction into a subsequent deformation, as Figure 2The deformation position is shown by the dashed line in 202. For example, the substrate 102 can be deformed from a concave orientation to a convex orientation. The deformation can be caused, for example, by the attempted expansion of one or more film layers epitaxially deposited on the substrate 102 during processing. The support body 210 and the barrier layer 230 help to reliably support the substrate 102 during deformation of the substrate 102 (e.g., during processing), which helps to reduce misalignment of the substrate 102, reduce defects, increase yield, enhance component performance, and enhance deposition uniformity (such as center-to-edge uniformity).

[0047] The fusion portion 238 can fuse the barrier layer support 235 of the barrier layer 230 to the support 215 of the support body 210. For example, particles can form between the barrier layer support 235 and the support 215 to form the fusion portion 238. As another example, multiple portions of the barrier layer support 235 and / or the support 215 can be melted to form the fusion portion 238.

[0048] The support 215, the barrier layer support 235, the second barrier layer support 240, and the fusion portion 238 facilitate heat dissipation and thermal uniformity (as well as deposition uniformity).

[0049] Figure 3 is according to one implementation Figure 2 The schematic side view of the barrier layer 230 shown.

[0050] Figure 4 is according to one implementation Figures 2 to 3 The schematic top view of the barrier layer 230 shown.

[0051] Figure 5 is according to one implementation Figures 2 to 4 The schematic bottom view of the barrier layer 230 shown.

[0052] The barrier layer plate 231 is a ring. The plurality of second barrier layer supports 240 are circumferentially offset from the plurality of barrier layer supports 235 such that the second barrier layer supports 240 are misaligned with the barrier layer supports 235 in a radial direction linearly extending outward from the geometric center 232 of the barrier layer plate 231 (in a manner similar to that shown by the radius R1). In the illustrated implementation, the barrier layer 230 includes eight barrier layer supports 235 and eight second barrier layer supports 240. The present disclosure contemplates that different numbers (such as 12) can be used for the barrier layer supports 235 and the second barrier layer supports 240.

[0053] Figure 6 is according to one implementation Figure 2 The schematic top view of the support body 210 shown.

[0054] Figure 6Some supports 215 of the support body 210 are not shown. The present disclosure contemplates that the number of supports 215 may be different from the number shown in the figures described herein. The present disclosure contemplates that the location of the supports 215 may be different from the location shown in the figures described herein. As an example, at least some of the supports 215 shown in Figure 6 may be omitted. As another example, the supports 215 may be circumferentially disposed between the supports 215 shown in Figure 6 , the supports 215 may be radially disposed inside the supports 215 shown in Figure 6 , and / or the supports 215 may be radially disposed outside the supports 215 shown in Figure 6 .

[0055] Figure 7 is a schematic side cross-sectional view of a substrate support 706 according to one implementation. The substrate support 706 may be used at least in part to replace the substrate support 106 shown in Figure 1 . The substrate support 706 is similar to the substrate support 106 shown in Figure 1 and Figure 2 , and includes one or more aspects, features, components, operations, and / or characteristics thereof.

[0056] In the implementation shown in Figure 7 , the barrier layer includes a plurality of barrier layer supports 735. The plurality of barrier layer supports 735 are spherical (such as spherical or oval). The present disclosure contemplates that the barrier layer plate may be omitted such that the barrier layer supports 735 may be individually moved into place (e.g., before fusing).

[0057] Figure 8 is a schematic perspective view of a transfer device 800 according to one implementation.

[0058] Figure 9 is a schematic side cross-sectional view of the transfer device 800 shown in Figure 8 according to one implementation. The transfer device 800 is used to move substrates related to semiconductor manufacturing (such as substrate 102). For example, the transfer device 800 may move substrates into and out of the processing chamber 100 via the transfer gate 137.

[0059] The transfer device 800 includes a transfer body 802. The transfer body 802 includes one or more outer surfaces 803, an arcuate recessed surface 804 that is recessed relative to the one or more outer surfaces 803, and one or more recess surfaces 805 between the one or more outer surfaces 803 and the arcuate recessed surface 804. In one or more embodiments, the transfer body 802 is a blade, such as a robotic blade connected to a transfer robot in a transfer chamber. In one or more embodiments, the transfer body 802 includes a wrist 810 and a plurality of arms 811. In one or more embodiments, the transfer body 802 is formed of quartz. The arcuate recessed surface 804 may span one or more (such as all) of the plurality of arms 811. The one or more recess surfaces 805 may be conical or arcuate. The one or more recess surfaces 805 may have a cone angle that is the same as or less than the above-mentioned cone angle A1.

[0060] The one or more recess surfaces 805 are processed (e.g., polished) to have the above-mentioned surface roughness (Ra) relative to the above-mentioned recess surface 213. The arcuate recessed surface 804 is hemispherical and has a radius of curvature RC1 in the range of 10.5 meters to 12.0 meters. In one or more embodiments, the radius of curvature RC1 is approximately 11.25 meters (such as 11.2505 meters).

[0061] Other values of the radius of curvature RC1 are considered. In one or more embodiments, the radius of curvature RC1 is determined and set according to the following equation 1 (where R is the radius of curvature; DED is the deformation distance; and SR is the radius of the substrate being transferred):

[0062] R 2 =(R - DED) 2 + SR 2 (Equation 1)

[0063] In one or more embodiments, the deformation distance DED is approximately 1 mm, and the radius SR is approximately 150 mm. The deformation distance DED may be the maximum deformation of the substrate, which may be the distance between the vertical position of the outer edge of the substrate and the vertical position of the center of the substrate (as Figure 9 shown).

[0064] Gravity can be used to guide the substrate 102 along one or more of the recess surfaces 805 and / or the arcuate recessed surface 804 to position and / or center the substrate 102 relative to the transfer body 802.

[0065] Figure 10 is a schematic side cross-sectional view of a transfer device 1000 according to one implementation.

[0066] The transfer device 1000 can be used at least in part to replace Figure 8and Figure 9 the transfer device 800 shown. The transfer device 1000 is similar to Figure 8 and Figure 9 the transfer device 800 shown and includes one or more aspects, features, components, operations, and / or characteristics thereof.

[0067] The transfer body 1002 includes one or more recessed surfaces 1005 and one or more second recessed surfaces 1006 located between the one or more recessed surfaces 1005 and the one or more outer surfaces 803. The one or more recessed surfaces 1005 and the one or more second recessed surfaces 1006 may be conical or arcuate.

[0068] The one or more recessed surfaces 1005 may have a cone angle that is the same as or greater than the above-mentioned cone angle A1. The one or more second recessed surfaces 1006 may have a cone angle that is the same as or greater than the above-mentioned cone angle A1. The one or more second recessed surfaces 1006 may have a cone angle that is less than the cone angle of the one or more recessed surfaces 1005.

[0069] Figure 11 is a schematic block diagram view of a method 1100 for processing a substrate for semiconductor manufacturing according to one implementation.

[0070] Operation 1102 includes moving the transfer device into the processing volume to move the substrate into the processing volume of the processing chamber. The transfer device is the transfer device discussed herein.

[0071] Operation 1104 includes landing the substrate on a barrier layer supported on a support body.

[0072] Operation 1106 includes heating the substrate located in the processing volume of the processing chamber while the substrate is on the barrier layer.

[0073] Operation 1108 includes flowing one or more process gases over the substrate to form one or more layers on the substrate while positioning the substrate on the barrier layer.

[0074] Benefits of the present disclosure include considering substrate deformation; modularity of processing parameters (such as processing temperature); reliably supporting the substrate during substrate deformation (e.g., during processing); more consistent contact areas between the substrate and other components; reducing or eliminating substrate misalignment; reducing or eliminating substrate defects; increasing throughput; enhancing component performance; enhancing thermal uniformity; enhancing thermal and deposition adjustability; and enhancing deposition uniformity (such as center-to-edge uniformity).

[0075] It is contemplated that one or more aspects of the present disclosure may be combined. As an example, one or more aspects, features, components, operations, and / or characteristics of various implementations of the processing chamber 100, the controller 120, the substrate support 106, the support body 210, the barrier layer 230, the substrate support 706, the barrier layer as Figure 7 shown, the transfer device 800, the transfer device 1000, and / or the method 1100 may be combined. Additionally, it is contemplated that one or more aspects of the present disclosure may include some or all of the foregoing benefits.

[0076] Although the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the present disclosure may be designed without departing from its basic scope, and its scope is determined by the claims that follow.

Claims

1. A substrate support applicable to semiconductor manufacturing operations, the substrate support comprising: A support body, the support body comprising: An outer surface, A recessed surface, which is recessed relative to the outer surface; A cavity surface, which is between the outer surface and the recessed surface, and the recessed surface and the cavity surface at least partially define a cavity of the support body, and A plurality of supports, which protrude relative to the recessed surface; and A barrier layer, which interfaces with the plurality of supports, the barrier layer comprising a plurality of barrier layer supports.

2. The substrate support according to claim 1, wherein the depth of the cavity is less than 1.0 millimeter.

3. The substrate support according to claim 1, wherein the cavity surface is conical and has a cone angle relative to the recessed surface, and the cone angle is 45 degrees or greater.

4. The substrate support according to claim 3, wherein the cavity surface has a surface roughness less than 15 microinches.

5. The substrate support according to claim 1, wherein each of the plurality of barrier layer supports is spherical.

6. The substrate support according to claim 1, wherein the barrier layer further comprises a barrier layer plate, the plurality of barrier layer supports protrude relative to a first side of the barrier layer plate, and each barrier layer support of the plurality of barrier layer supports contacts at least two of the plurality of supports.

7. The substrate support according to claim 6, wherein the barrier layer further comprises a plurality of second barrier layer supports protruding relative to a second side of the barrier layer plate.

8. The substrate support according to claim 7, wherein each of the plurality of supports, each of the plurality of barrier layer supports, and each of the plurality of second barrier layer supports is hemispherical.

9. The substrate support according to claim 7, wherein the barrier layer plate is a ring, and the plurality of second barrier layer supports are circumferentially offset from the plurality of barrier layer supports.

10. The substrate support according to claim 1, wherein the support body further comprises a plurality of gas openings extending between the cavity surface and a second outer surface of the support body, the second outer surface being opposite to the outer surface.

11. The substrate support according to claim 1, wherein the support body and the barrier layer are each formed of silicon carbide (SiC) or graphite coated with SiC.

12. The substrate support according to claim 1, wherein the recessed surface has an outer diameter, and the plurality of barrier layer supports are aligned with a radial position that is a ratio of the outer diameter, and the ratio is in the range of 0.4 to 0.

6.

13. A processing chamber applicable to semiconductor manufacturing, the processing chamber comprising: A window, the window at least partially defining a processing volume; A plurality of heat sources, the heat sources being configured to heat the processing volume; And A substrate support, the substrate support being disposed in the processing volume, the substrate support comprising: A support body, the support body comprising: An outer surface, A recessed surface that is recessed relative to the outer surface, A cavity surface that is between the outer surface and the recessed surface, and A plurality of support members that project relative to the recessed surface, and A barrier layer that interfaces with the plurality of support members, the barrier layer including a plurality of barrier layer support members.

14. The processing chamber according to claim 13, wherein the barrier layer includes a barrier layer plate, the plurality of barrier layer support members project relative to a first side of the barrier layer plate, and each of the plurality of barrier layer support members contacts at least two of the plurality of support members.

15. The processing chamber according to claim 13, wherein the recessed surface has an outer diameter, and the plurality of barrier layer support members are aligned with a radial position that is a ratio of the outer diameter, and the ratio is in the range of 0.4 to 0.

6.

16. A transfer device for moving a substrate related to semiconductor manufacturing, the transfer device comprising: A transfer body that includes: An outer surface, A curved recessed surface that is recessed relative to the outer surface, A cavity surface that is between the outer surface and the curved recessed surface.

17. The transfer device according to claim 16, wherein the curved recessed surface is hemispherical and has a radius of curvature in the range of 10.5 meters to 12.0 meters.

18. The transfer device according to claim 17, wherein the transfer body is formed of quartz.

19. The transfer device according to claim 16, wherein the transfer body is a blade including a wrist and a plurality of arms.

20. The transfer device according to claim 16, wherein the transfer body further includes a second cavity surface between the cavity surface and the outer surface.

Images