Flexible semiconductor device and application thereof
By designing flexible semiconductor devices, using CMOS process-compatible manufacturing processes and microporous structures to adsorb DNA nucleic acid connectors, real-time detection of solution pH changes, solving the problems of low efficiency, high cost and insufficient detection sensitivity in gene sequencing technology, and achieving efficient and accurate gene sequencing.
Patent Information
- Application Number
- CN202510557213.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-04-29
- Publication Date
- 2025-07-25
AI Technical Summary
The existing gene sequencing technology has problems such as low detection efficiency, high cost, high complexity and insufficient sensitivity to solution pH changes, especially in biosensors using flexible two-dimensional film materials.
A flexible semiconductor device is designed, including a flexible substrate, a first metal layer, an insulating dielectric layer, a two-dimensional semiconductor film, a second metal layer, an ion-sensitive film and a gold film. By adsorbing a DNA nucleic acid connector on the side wall of the microporous structure, the solution pH value changes are detected in real time, and the operation process is simplified by using a CMOS process-compatible manufacturing process.
It improves the efficiency and accuracy of gene sequencing, reduces production costs, simplifies operating procedures, and enhances the detection sensitivity of solution pH changes, making it suitable for large-scale production and clinical diagnostic applications.
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Figure CN120366038A_ABST
Abstract
Description
Technical Field
[0001] The present invention belongs to the technical field at the intersection of microelectronics technology and bioscience, and specifically relates to a flexible semiconductor device and its application. Background Art
[0002] Biosensing technology is a key method for achieving precise analysis of substances at the molecular level and is widely used in the field of molecular detection. In particular, semiconductor biosensors (BioFETs) that combine biosensing technology with semiconductor technology have attracted much attention due to their advantages such as fast response speed, good selectivity, low detection cost, and high detection accuracy. With the development of semiconductor technology, the feature size of field-effect transistor (FET) devices has been continuously reduced, the power consumption has been decreased, and large-scale integration has become possible. Biosensor chips that combine biosensors with complementary metal-oxide-semiconductor (CMOS) integrated circuits have the characteristics of high sensitivity, high throughput, precise measurement, and fast speed.
[0003] Gene sequencing technology is one of the most precise methods in molecular biology analysis and is widely used in clinical diagnosis, personalized medication guidance, and disease pathogenesis research. Semiconductor gene sequencing technology based on CMOS chips uses electrical signals instead of optical signals as sequencing signals, greatly reducing the complexity and cost of sequencing equipment, increasing the sequencing speed, and being more suitable for clinical applications. The basic sensor device of gene sequencing chips, the ion-sensitive field-effect transistor (ISFET), has the characteristics of fast response speed and high signal-to-noise ratio, and its manufacturing process is gradually compatible with traditional CMOS processes, promoting the development of multifunctional biochips based on ISFET sensor arrays.
[0004] Two-dimensional nanomaterials have developed rapidly due to their good electrical, optical, and mechanical properties. Thin-film transistors (TFTs) are widely used flexible electronic devices with good biocompatibility and are widely used in wearable human health monitoring and biomolecule detection. For example, TFT sensor devices based on molybdenum disulfide are used to detect proteins, FET sensor devices combined with molybdenum disulfide nanosheets / gold nanoparticles achieve highly sensitive detection of mercurous ions in aqueous solutions, and biosensors of multilayer molybdenum disulfide FET devices are used for prostate-specific antigen detection.
[0005] Despite certain progress in related technologies, there are still many problems. Although the traditional Sanger sequencing method has high accuracy, it is slow and costly. The emerging high-throughput sequencing technology (NGS, Next Generation Sequencing) is widely used, but its sample preparation process is complex. On the other hand, it basically uses optical signals as sequencing signals, resulting in complex and costly sequencing equipment. In addition, NGS technology based on semiconductor chips requires a large number of microbead carriers to immobilize DNA molecules, increasing the sequencing cost and complexity. Existing gene sequencing chips have deficiencies in the sensitivity of detecting changes in the pH value of the solution, limiting the further improvement of sequencing accuracy.
[0006] In the field of flexible electronic devices, TFTs based on flexible two-dimensional thin film materials have advantages such as a large specific surface area, high electron mobility, adjustable bandgap, and good biocompatibility. Biosensors with two-dimensional thin film materials as conductive channels have characteristics such as small device volume, simple structure, fast response speed, high selectivity, and high sensitivity. However, there are currently no relevant achievements in applying TFTs based on flexible two-dimensional thin film materials to the field of gene sequencing.
[0007] Generally speaking, it is of great practical significance to develop a new technology or device to solve the problems existing in existing gene sequencing technologies and improve sequencing efficiency and accuracy. Summary of the Invention
[0008] To solve the deficiencies in the prior art, the present invention provides a flexible semiconductor device and its application. This device has advantages such as simple structure, stable performance, low cost, and easy operation. Using this device for gene sequencing can effectively improve the efficiency and accuracy of sequencing.
[0009] To achieve the above object, the specific solution adopted by the present invention is as follows: On the one hand, the present invention discloses a flexible semiconductor device, including: A flexible substrate; A first metal layer, serving as the gate of the device, formed on the flexible substrate; An insulating dielectric layer, formed on the flexible substrate and covering the first metal layer; A two-dimensional semiconductor thin film, serving as the conductive channel of the device, formed on the insulating dielectric layer; A second metal layer, serving as the source and drain of the device, formed on the insulating dielectric layer and surrounding the side of the two-dimensional semiconductor thin film; An ion-sensitive thin film, covering the surface of the ion-sensitive thin film and the two-dimensional semiconductor thin film, and a microporous structure is formed at the position corresponding to the two-dimensional semiconductor thin film in this ion-sensitive thin film; A gold thin film, covering the side wall of the microporous structure and capable of adsorbing DNA nucleic acid adapters.
[0010] Further, a gold thin film is deposited on the surface of the ion-sensitive thin film first; then a silicon dioxide thin film is grown on the surface of the gold thin film; after that, a self-alignment process is adopted, and through dry etching, only the silicon dioxide thin film located at the sidewall position of the microporous structure is retained; then wet etching is used to etch the gold thin film, and only the gold thin film located at the sidewall position of the microporous structure is retained; finally, the silicon dioxide thin film at the sidewall position of the microporous structure is removed by wet etching.
[0011] Further, the material of the flexible substrate is any one of polyimide, polyethylene terephthalate, polyvinyl alcohol, polyester, and polyethylene naphthalate; The material of the first metal layer is any one of aluminum, copper, gold, and silver; The material of the insulating dielectric layer is any one of aluminum oxide and silicon dioxide; The material of the two-dimensional semiconductor thin film is any one of molybdenum disulfide, tungsten disulfide, molybdenum diselenide, graphene, boron nitride, and black phosphorus; The material of the second metal layer is any one of aluminum, copper, gold, and silver; The material of the ion-sensitive thin film is any one of silicon nitride, aluminum oxide, tantalum oxide, and hafnium oxide.
[0012] Further, the preparation method of the first metal layer or the second metal layer is: coating a photoresist on the surface of the flexible substrate or the two-dimensional semiconductor thin film; exposing and developing the photoresist; depositing a layer of metal by electron beam evaporation or sputtering; using a lift-off process to strip the photoresist to form a patterned first metal layer or second metal layer.
[0013] Further, the preparation method of the first metal layer or the second metal layer: depositing a layer of metal by electron beam evaporation or sputtering; coating a photoresist on this layer of metal; exposing and developing the photoresist; etching away the metal not covered by the photoresist through a wet etching process; stripping the photoresist to form a patterned first metal layer or second metal layer.
[0014] On the other hand, the present invention discloses an application of the flexible semiconductor device in the field of gene sequencing.
[0015] Further, the method for gene sequencing is: chemically adsorbing a DNA nucleic acid linker on the gold thin film; introducing a nucleic acid molecule to be detected and an amplification reaction solution into the microporous structure; then successively introducing four nucleotide solutions, and the flexible semiconductor device detects the change in the pH value of the solution in real time and reduces it to the base information at the corresponding position on the nucleic acid molecule to be detected, and thus the nucleic acid sequence of the nucleic acid molecule to be detected can be measured.
[0016] Further, one end of the DNA nucleic acid linker is modified with a mercapto group.
[0017] Furthermore, one end of the nucleic acid molecule to be tested is modified with a nucleic acid sequence that is complementary to the base of the DNA nucleic acid linker.
[0018] Beneficial effects: (1) When the flexible semiconductor device of the present invention is used for gene sequencing, the cumbersome steps of using a large number of microbead carriers to fix DNA molecules in traditional high-throughput sequencing technology are abandoned, greatly simplifying the operation process. Its manufacturing process adopts traditional micro-machining technology and is compatible with CMOS technology, so that in large-scale production, it can use existing mature processes and equipment without large-scale replacement of production lines, effectively reducing production costs. It reduces the use of consumables in the sample preparation process, avoids sample loss and errors caused by complex operations, improves sequencing efficiency, and reduces overall cost investment.
[0019] (2) The gold film on the side wall of the device's ion-sensitive film microporous structure specifically adsorbs the DNA nucleic acid linker. When the DNA nucleic acid linker releases hydrogen ions when paired with nucleotides, the semiconductor device can detect changes in the solution's pH value in real time. Compared with traditional gene sequencing chips, this device has a higher sensitivity to changes in the solution's pH value and can accurately capture tiny changes in the base pairing process, thereby more accurately restoring the nucleic acid sequence of the DNA molecule to be tested, providing more reliable data support for clinical diagnosis, disease research, etc., and improving the accuracy of gene sequencing.
[0020] (3) The substrate is made of flexible materials, and the selected two-dimensional semiconductor films, ion-sensitive films and other materials have good biocompatibility. They have little interference with biological samples during gene sequencing and can truly reflect the characteristics of biological molecules. By directional modification of DNA nucleic acid connectors on the surface of the micropore sidewalls, the binding mode with biological molecules is optimized, and the stability and reliability in biological detection are improved. In the gene sequencing process of complex biological samples, stable performance can be maintained to ensure the accuracy and reliability of sequencing results.
[0021] (4) The device manufacturing process is compatible with traditional micromachining and CMOS processes, which facilitates large-scale production and industrial applications. Existing semiconductor manufacturing companies do not need to carry out large-scale technological transformation, but only need to make appropriate adjustments to existing production lines to achieve the production of flexible semiconductor devices, which lowers the threshold for industrialization, helps accelerate the promotion and application of technology, and promotes technological progress and industrial development in the field of biological detection.
[0022] (5) Two-dimensional thin film materials (such as MoS2) have characteristics such as a large specific surface area, high electron mobility, adjustable bandgap, and good biocompatibility. Biosensors with two-dimensional thin film materials as conductive channels have advantages such as small device volume, simple structure, fast response speed, high selectivity, and high sensitivity, and perform excellently in the detection of low-concentration complex biological samples. In addition, flexible semiconductor devices or chips based on two-dimensional materials can still maintain stable performance under repeated bending and stretching, which provides convenience for their assembly in sequencing devices.
[0023] (6) The microporous sidewall material of the flexible semiconductor device uses a gold thin film to adsorb DNA molecules. Gold has good compatibility with biological molecules, and the gold-sulfur bond formed between it and the DNA nucleic acid linker modified with a mercapto group has good mechanical properties and chemical stability, which can ensure the stable adsorption of DNA molecules on the surface of gold. BRIEF DESCRIPTION OF THE DRAWINGS
[0024] Figure 1 It is a schematic diagram of the cross-sectional structure and gene sequencing of the flexible semiconductor device in the present invention.
[0025] Figure 2 It is a schematic diagram of the preparation process of the flexible semiconductor device.
[0026] Figure 3 It is a schematic diagram of the preparation process of the microporous sidewall thin film of the flexible semiconductor device.
[0027] Figure 4 It is a schematic diagram of the DNA modification and gene sequencing process of the flexible semiconductor device Reference numerals in the figure: 1, flexible substrate; 2, first metal layer; 3, insulating dielectric layer; 4, two-dimensional semiconductor thin film; 5, second metal layer; 6, ion-sensitive thin film; 7, gold thin film; 8, silicon dioxide thin film; 9, DNA nucleic acid linker; 10, nucleic acid molecule; 11 is a nucleic acid molecule bound to a primer. DETAILED DESCRIPTION OF THE EMBODIMENTS
[0028] The technical solutions of the present invention will be clearly and completely described below in conjunction with specific embodiments. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all of the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the protection scope of the present invention.
[0029] Please refer to Figure 1, the flexible semiconductor device of the present invention includes a flexible substrate 1; a first metal layer 2 located on the flexible substrate 1 as the device gate; an insulating dielectric layer 3 formed on the flexible substrate 1 and covering the first metal layer 2; a two-dimensional semiconductor thin film 4 on the insulating dielectric layer 3 as the device conductive channel; a second metal layer 5 formed on the insulating dielectric layer 3 and surrounding the side of the two-dimensional semiconductor thin film 4 as the device source and drain; an ion-sensitive thin film 6 covering the surface of the two-dimensional semiconductor thin film 4 and having a microporous structure formed at a position corresponding to the two-dimensional semiconductor thin film 4; and a gold thin film 7 covering the side wall of the microporous structure and capable of adsorbing DNA nucleic acid linkers 9.
[0030] The preparation method of the semiconductor device will be elaborated in detail below. Please refer to Figure 2 , and its preparation method mainly includes the following steps: S1. Select the flexible substrate 1: Select one of polyimide, polyethylene terephthalate, polyvinyl alcohol, polyester, and polyethylene naphthalate glycol ester as the flexible substrate 1 material. These materials have good flexibility and stability, providing a reliable basis for subsequent device preparation; S2. Prepare the patterned first metal layer 2 (gate): The material of the first metal layer 2 can be selected from one of aluminum, copper, gold, and silver. There are two preparation methods: The first is to first coat a photoresist on the flexible substrate 1, expose and develop the photoresist, then deposit a layer of metal by electron beam evaporation or sputtering, and finally strip the photoresist to form the patterned first metal layer 2 as the device gate; The second method is to first deposit a layer of metal by electron beam evaporation or sputtering, coat a photoresist on this layer of metal, after exposure and development, etch away the metal not covered by the photoresist through a wet etching process, and then strip the photoresist to form the patterned first metal layer 2; S3. Grow the insulating dielectric layer 3: Grow an insulating dielectric layer 3 on the surface of the first metal layer 2 by methods such as chemical vapor deposition or thermal oxidation. The insulating dielectric can be selected from alumina, silica, or other high dielectric constant materials, and its function is to achieve insulation between various parts of the device and ensure the stable electrical performance of the device; S4. Transfer the two-dimensional semiconductor thin film 4: Transfer a layer of two-dimensional semiconductor thin film 4 on the surface of the insulating dielectric layer 3. The material can be selected from one of molybdenum disulfide, tungsten disulfide, molybdenum diselenide, graphene, boron nitride, and black phosphorus. The two-dimensional semiconductor thin film 4 serves as the conductive channel of the device and realizes signal conduction by utilizing its unique electrical properties; S5. Prepare the patterned second metal layer 5 (source and drain): The material and formation method of the second metal layer 5 are the same as those of the first metal layer 2; Grow the patterned second metal layer 5 on the surface of the two-dimensional semiconductor thin film 4 as the source and drain of the device, providing a current path for the device; S6. Growing an ion-sensitive film 6: By means of chemical vapor deposition or the like, an ion-sensitive film 6 is grown on the surface of the second metal layer 5 and the two-dimensional semiconductor film 4. A microporous structure is formed at the position corresponding to the two-dimensional semiconductor film 4 in the ion-sensitive film 6. The material of the ion-sensitive film 6 is one of silicon nitride, aluminum oxide, tantalum oxide, and hafnium oxide. This film is used to detect ion changes in the solution and is a key part for realizing the gene sequencing function; S7. Growing a gold film 7 on the sidewall of the microporous structure: A gold film 7 is grown at the position of the sidewall of the microporous structure of the ion-sensitive film 6. The gold film 7 can chemically adsorb DNA molecules and provide a binding site for gene sequencing. The specific process steps are as follows: Please refer to Figure 3 , first deposit a gold film 7 on the surface of the ion-sensitive film 6; then grow a silicon dioxide film 8 on the surface of the gold film 7; after that, adopt a self-alignment process and perform dry etching to only retain the silicon dioxide film 8 located at the position of the sidewall of the microporous structure; then perform wet etching on the gold film 7 to only retain the gold film 7 located at the position of the sidewall of the microporous structure; finally, remove the silicon dioxide film 8 at the position of the sidewall of the microporous structure by wet etching.
[0031] Please refer to Figure 4 , the method for gene sequencing using the above flexible semiconductor device is as follows: (1) Chemically adsorbing a DNA nucleic acid linker 9: In this step of chemically adsorbing a DNA nucleic acid linker on the gold film, it is mainly based on the specific binding ability of a mercapto group (-SH) to gold. Gold atoms have empty electron orbits, while the sulfur atom in the mercapto group contains lone pair electrons. When a DNA nucleic acid linker containing a mercapto group contacts the gold film, the lone pair electrons of the sulfur atom will form a stable gold-sulfur bond (Au-S bond) with the empty orbit of the gold atom. The formation of this chemical bond is spontaneous and has a relatively high bond energy, enabling the DNA nucleic acid linker to be firmly adsorbed on the surface of the gold film. From the perspective of chemical equilibrium, the reaction will proceed in the direction of forming the gold-sulfur bond until the adsorption equilibrium is reached. In addition, the adsorption of the DNA nucleic acid linker on the gold film surface is also affected by various factors, such as the pH value and ionic strength of the solution. At an appropriate pH value (close to neutral) and a relatively low ionic strength, the activity of the mercapto group is relatively high, which is conducive to the formation of the gold-sulfur bond. At the same time, the microscopic structure of the gold film surface will also affect the adsorption effect. The surface roughness and defects will increase the adsorption sites and improve the adsorption amount; (2) Introduce the nucleic acid molecule to be detected and the amplification reaction solution into the device. One end of the nucleic acid molecule to be detected is modified with a nucleic acid sequence that is complementary to the base of the DNA nucleic acid linker 9 and is connected to the nucleic acid linker on the gold film 7 on the sidewall of the micropore through base pairing. After the thermal cycle PCR amplification reaction, a large number of nucleic acid molecules 10 (the nucleic acid molecules 10 are completely complementary to the introduced nucleic acid molecules to be detected) are attached to the gold film 7 on the sidewall of the micropore; (3)Sequencing detection: After the nucleic acid molecule 10 binds to the primer to obtain the nucleic acid molecule 11 bound to the primer, four nucleotide solutions are sequentially introduced. Under the action of DNA polymerase, if the nucleotide is complementary to the base on the nucleic acid molecule to be detected, a polymerization reaction will occur, and hydrogen ions (H⁺) will be released simultaneously. This is because during the polymerization of nucleotides, the formation of phosphodiester bonds is accompanied by the release of protons. The change in the pH value of the solution will cause a change in the threshold voltage of the flexible semiconductor device, which is based on the working principle of the field effect transistor. The ion-sensitive film in the flexible semiconductor device is very sensitive to the hydrogen ion concentration in the solution. When the pH value of the solution changes, hydrogen ions will interact with the active sites on the surface of the ion-sensitive film, changing the charge distribution on the film surface. This change in charge distribution will affect the carrier concentration and mobility in the conductive channel of the two-dimensional semiconductor film, thereby causing a change in the threshold voltage of the device. By measuring the change in the threshold voltage, the change in the hydrogen ion concentration in the solution can be deduced, so as to determine the position where base pairing occurs and restore the base information at the corresponding position on the nucleic acid molecule to be detected, completing gene sequencing.
[0032] Example 1 This example discloses a flexible semiconductor device, including a flexible substrate 1, a first metal layer 2, an insulating dielectric layer 3, a two-dimensional semiconductor film 4, a second metal layer 5, an ion-sensitive film 6, and a gold film 7 capable of adsorbing a DNA nucleic acid linker 9. Its preparation method is as follows: S1. Preparation of the flexible substrate 1: Select polyimide as the material of the flexible substrate 1, and prepare the flexible substrate 1 with a certain thickness and size by solution casting or hot pressing; S2. Preparation of the first metal layer 2: Coating a layer of photoresist on the surface of the flexible substrate 1, performing exposure and development processes to form a gate pattern, then depositing a layer of aluminum metal by electron beam evaporation or sputtering, and finally using a lift-off process to strip the photoresist to obtain the patterned first metal layer 2; S3. Preparation of the insulating dielectric layer 3: Depositing a layer of alumina film on the surfaces of the flexible substrate 1 and the first metal layer 2 by chemical vapor deposition as the insulating dielectric layer 3; S4. Preparation of the two-dimensional semiconductor film 4: Growing a layer of molybdenum disulfide film on the surface of the insulating dielectric layer 3 by chemical vapor deposition as the conductive channel of the device; S5. Preparation of the second metal layer 5: Coating a layer of photoresist on the surfaces of the insulating dielectric layer 3 and the two-dimensional semiconductor film 4, performing exposure and development processes to form source and drain patterns; then depositing a layer of copper metal by electron beam evaporation or sputtering, and finally using a lift-off process to strip the photoresist to obtain the patterned second metal layer 5; S6. Preparation of the ion-sensitive film 6: A silicon nitride film is deposited on the surfaces of the two-dimensional semiconductor film 4 and the second metal layer 5 by chemical vapor deposition as the ion-sensitive film 6. A microporous structure is formed at the position corresponding to the two-dimensional semiconductor film 4 in the silicon nitride film through photolithography and etching processes; S7. Preparation of the gold film 7: First, a gold film 7 is deposited on the surface of the ion-sensitive film 6; then, a silicon dioxide film 8 is grown on the surface of the gold film 7; afterwards, a self-alignment process is adopted, and through dry etching, only the silicon dioxide film 8 located at the sidewall position of the microporous structure is retained; then, the gold film 7 is etched by wet etching, and only the gold film 7 located at the sidewall position of the microporous structure is retained; finally, the silicon dioxide film 8 at the sidewall position of the microporous structure is removed by wet etching to obtain the gold film 7 covering the sidewalls of the microporous structure.
[0033] Example 2 This example discloses a flexible semiconductor device, including a flexible substrate 1, a first metal layer 2, an insulating dielectric layer 3, a two-dimensional semiconductor film 4, a second metal layer 5, an ion-sensitive film 6, and a gold film 7 capable of adsorbing DNA nucleic acid adapters 9. Its preparation method is as follows: S1. Preparation of the flexible substrate 1: Polyethylene terephthalate is selected as the material of the flexible substrate 1, and the flexible substrate 1 with a certain thickness and size is prepared by a hot pressing method; S2. Preparation of the first metal layer 2: A layer of gold metal is deposited by electron beam evaporation or sputtering. A layer of photoresist is coated on this layer of metal, and exposure and development processes are carried out to form a gate pattern; then, the metal not covered by the photoresist is etched away by a wet etching process, and finally the photoresist is peeled off to obtain the patterned first metal layer 2; S3. Preparation of the insulating dielectric layer 3: A silicon dioxide film is deposited on the surfaces of the flexible substrate 1 and the first metal layer 2 by chemical vapor deposition as the insulating dielectric layer 3; S4. Preparation of the two-dimensional semiconductor film 4: A graphene film is grown on the surface of the insulating dielectric layer 3 by chemical vapor deposition as the conductive channel of the device; S5. Preparation of the second metal layer 5: A layer of silver metal is deposited by electron beam evaporation or sputtering. A layer of photoresist is coated on this layer of metal, and exposure and development processes are carried out to form source and drain patterns; then, the metal not covered by the photoresist is etched away by a wet etching process, and finally the photoresist is peeled off to obtain the patterned second metal layer 5; S6. Preparation of the ion-sensitive film 6: An aluminum oxide film is deposited on the surfaces of the two-dimensional semiconductor film 4 and the second metal layer 5 by chemical vapor deposition as the ion-sensitive film 6; a microporous structure is formed at the position corresponding to the two-dimensional semiconductor film 4 in the aluminum oxide film through photolithography and etching processes; S7. Preparation of the gold thin film 7: The gold thin film 7 covering the side walls of the microporous structure was prepared according to the method in Example 1.
[0034] The semiconductor devices prepared in Example 1 and Example 2 were used for gene sequencing. The specific method was as follows: A DNA nucleic acid linker 9 modified with a mercapto group at one end was chemically adsorbed on the gold thin film 7; a nucleic acid molecule to be detected with a nucleic acid sequence modified with a nucleic acid sequence complementary to the base of the DNA nucleic acid linker 9 at one end and an amplification reaction solution were introduced into the microporous structure; then four nucleotide solutions were introduced in sequence, and the flexible semiconductor device detected the change in the pH value of the solution in real time, and the base information at the corresponding position on the nucleic acid molecule to be detected was restored, and the nucleic acid sequence of the nucleic acid molecule to be detected could be measured.
[0035] The above are only the preferred embodiments of the present invention, and do not impose any form of limitation on the present invention. Any equivalent transformation or modification made according to the essence of the present invention should be covered within the protection scope of the present invention.
Claims
1. A flexible semiconductor device, characterized in that, Comprising: A flexible substrate; A first metal layer, serving as a device gate, formed on the flexible substrate; An insulating dielectric layer, formed on the flexible substrate and covering the first metal layer; A two-dimensional semiconductor thin film, serving as a device conductive channel, formed on the insulating dielectric layer; A second metal layer, serving as a device source and drain, formed on the insulating dielectric layer and surrounding the side of the two-dimensional semiconductor thin film; An ion-sensitive thin film, covering the surfaces of the ion-sensitive thin film and the two-dimensional semiconductor thin film, and a microporous structure is formed at the position corresponding to the two-dimensional semiconductor thin film in the ion-sensitive thin film; A gold thin film, covering the side walls of the microporous structure and capable of adsorbing DNA nucleic acid adapters.
2. A flexible semiconductor device according to claim 1, characterized in that, The preparation method of the gold thin film is as follows: First, deposit a layer of gold thin film on the surface of the ion-sensitive thin film; then grow a layer of silicon dioxide thin film on the surface of the gold thin film; after that, adopt a self-alignment process and through dry etching, only the silicon dioxide thin film located at the side wall position of the microporous structure is retained; Then, wet etching is used to etch the gold thin film, and only the gold thin film located at the side wall position of the microporous structure is retained; finally, the silicon dioxide thin film at the side wall position of the microporous structure is removed by wet etching.
3. A flexible semiconductor device according to claim 1, characterized in that The material of the flexible substrate is any one of polyimide, polyethylene terephthalate, polyvinyl alcohol, polyester, and polyethylene naphthalate glycol ester; The material of the first metal layer is any one of aluminum, copper, gold, and silver; The material of the insulating dielectric layer is any one of aluminum oxide and silicon dioxide; The material of the two-dimensional semiconductor thin film is any one of molybdenum disulfide, tungsten disulfide, molybdenum diselenide, graphene, boron nitride, and black phosphorus; The material of the second metal layer is any one of aluminum, copper, gold, and silver; The material of the ion-sensitive thin film is any one of silicon nitride, aluminum oxide, tantalum oxide, and hafnium oxide.
4. A flexible semiconductor device according to claim 1, wherein The preparation method of the first metal layer or the second metal layer is: Coating a photoresist on the surface of the flexible substrate or the two-dimensional semiconductor thin film; exposing and developing the photoresist; depositing a layer of metal by electron beam evaporation or sputtering; using a lift-off process to strip the photoresist to form a patterned first metal layer or second metal layer.
5. A flexible semiconductor device according to claim 1, wherein, The preparation method of the first metal layer or the second metal layer: Depositing a layer of metal by electron beam evaporation or sputtering; coating a photoresist on this layer of metal; exposing and developing the photoresist; Etching away the metal not covered by the photoresist through a wet etching process; Stripping the photoresist to form a patterned first metal layer or second metal layer.
6. Application of a flexible semiconductor device according to any one of claims 1 - 5 in the field of gene sequencing.
7. An application according to claim 6, characterized in that, The method for gene sequencing is as follows: Chemically adsorbing DNA nucleic acid adapters on the gold thin film; introducing the nucleic acid molecules to be detected and an amplification reaction solution into the microporous structure; then successively introducing four nucleotide solutions, and the flexible semiconductor device detects the change in the pH value of the solution in real time, and restores it to the base information at the corresponding position on the nucleic acid molecule to be detected, and thus the nucleic acid sequence of the nucleic acid molecule to be detected can be measured.
8. An application according to claim 7, characterized in that, One end of the DNA nucleic acid adapter is modified with a thiol group.
9. An application according to claim 7, characterized in that, One end of the nucleic acid molecule to be detected is modified with a nucleic acid sequence that is complementary to the base of the DNA nucleic acid adapter.