Chemical vapor deposition equipment

Abstract

The invention belongs to the technical field of vacuum coating, and discloses chemical vapor deposition equipment. The chemical vapor deposition equipment comprises a vacuum chamber, a rotating assembly and a heating assembly, the rotating assembly comprises a driving part and a rotating part, the rotating part is rotationally connected to the chamber wall of the vacuum chamber, a penetrating hole is formed in the rotating part, and a substrate carrying disc is arranged at an opening in the top end of the penetrating hole; the driving part is used for driving the rotating part to rotate; the heating assembly comprises a first heating piece and a second heating piece, the first end of the first heating piece is located in the penetrating hole and provided with a disc-shaped heating area and a center area used for heating the substrate, and the first end of the second heating piece is located in the vacuum cavity and provided with an annular heating area and a peripheral area used for heating the substrate. The device can effectively control the temperature uniformity of a large-size substrate, is also suitable for heating a small-size substrate, is wide in application range, and avoids the situation that gas at the lower part is heated to expand and rises to the upper part to be condensed and then drops.

Description

Technical Field

[0001] The present invention relates to the technical field of vacuum coating, and particularly relates to a chemical vapor deposition device. Background Art

[0002] Chemical vapor deposition is a technology in which, under certain temperature conditions, mixed gases interact with each other or with the surface of a substrate, and a thin film coating of metal or compound is formed on the surface of the substrate to modify the surface of the material to meet special performance requirements such as wear resistance, oxidation resistance, corrosion resistance, and specific electrical, optical, and tribological properties. The silicon carbide (SiC) epitaxial technology is to grow a high-quality epitaxial layer on a SiC substrate through chemical vapor deposition for manufacturing power devices.

[0003] For large-sized substrates, in existing chemical vapor deposition devices, due to the limitations of heater size and cost, only the central region of the substrate can be heated, resulting in a high temperature in the central region of the substrate and a low temperature in the peripheral region. Therefore, existing chemical vapor deposition devices cannot effectively control the temperature uniformity of large-sized substrates, leading to a low yield. In addition, existing chemical vapor deposition devices mainly heat the bottom of the substrate to achieve overall heating of the substrate. However, this will cause a large temperature difference between the upper and lower sides of the thermal field where the substrate is located, resulting in the gas in the lower part being heated and expanding to rise to the upper part, condensing and then falling, causing turbulence. Summary of the Invention

[0004] The purpose of the present invention is to provide a chemical vapor deposition device that can effectively control the temperature uniformity of large-sized substrates while saving costs, is also applicable to heating small-sized substrates, has a wide range of applications, and in addition, the temperature difference between the upper and lower sides of the thermal field where the substrate is located is small, and the situation where the gas in the lower part is heated and expands to rise to the upper part, condensing and then falling will not occur.

[0005] To achieve this purpose, the present invention adopts the following technical solutions:

[0006] A chemical vapor deposition device, comprising:

[0007] A vacuum chamber;

[0008] A rotating assembly, including a driving member and a rotating member. The rotating member is rotatably connected to the chamber wall of the vacuum chamber. The rotating member is provided with a through hole, and a substrate carrier is arranged at the top opening of the through hole. The substrate carrier is used for carrying a substrate; the driving member is fixed to the vacuum chamber, and the output end of the driving member is used to drive the rotating member to rotate;

[0009] The heating assembly includes a first heating element and a second heating element. The first end of the first heating element is located within the through-hole. The first end of the first heating element has a disc-shaped heating zone for heating the central region of the substrate. The second end of the first heating element penetrates through the chamber wall of the vacuum chamber and is fixed outside the vacuum chamber. The second heating element is disposed on the side of the substrate carrier away from the through-hole. The first end of the second heating element is located within the vacuum chamber. The first end of the second heating element has an annular heating zone for heating the peripheral region of the substrate. The second end of the second heating element penetrates through the chamber wall of the vacuum chamber and is fixed outside the vacuum chamber.

[0010] In some possible embodiments, the projection of the annular heating zone on the disc-shaped heating zone partially overlaps with the annular heating zone.

[0011] In some possible embodiments, the chemical vapor deposition apparatus further includes a temperature measurement assembly. The temperature measurement assembly includes a first temperature measurement element and a second temperature measurement element. The first temperature measurement element is used to detect the temperature of the central region of the substrate. The first temperature measurement element is communicatively connected to the first heating element. The second temperature measurement element is used to detect the temperature of the peripheral region of the substrate. The second temperature measurement element is communicatively connected to the first temperature measurement element and is communicatively connected to the second heating element.

[0012] In some possible embodiments, both the first temperature measurement element and the second temperature measurement element are infrared temperature sensors. The second heating element is provided with an inner cavity. The chamber wall of the vacuum chamber is provided with a first temperature measurement channel and a second temperature measurement channel that are both communicated with the inner cavity. The first temperature measurement element is located outside the vacuum chamber and is disposed at the opening of the first temperature measurement channel. The second temperature measurement element is located outside the vacuum chamber and is disposed at the opening of the second temperature measurement channel.

[0013] In some possible embodiments, the vacuum chamber is provided with a gas inlet. The heating temperature on the side of the second heating element close to the gas inlet is greater than the heating temperature on the side of the second heating element away from the gas inlet.

[0014] In some possible embodiments, there are two second temperature measurement elements. Both of the two second temperature measurement elements are communicatively connected to the second heating element and are both communicatively connected to the first temperature measurement element. One of the second temperature measurement elements is disposed on the side of the second heating element close to the gas inlet, and the other second temperature measurement element is disposed on the side of the second heating element away from the gas inlet.

[0015] In some possible embodiments, the driving element is a magnetic coupling rotator.

[0016] In some possible embodiments, the chemical vapor deposition apparatus further includes a top plate and a bottom plate, both of which are fixed inside the vacuum chamber. The top plate is located on the side of the second heating element close to the first heating element. The bottom plate is sleeved outside the rotating assembly. The top plate, the bottom plate and the chamber wall of the vacuum chamber enclose a process chamber. The vacuum chamber is provided with a gas inlet, and the gas inlet communicates with the process chamber.

[0017] In some possible embodiments, the chemical vapor deposition apparatus further includes a first heat-insulating member and a second heat-insulating member, both of which are fixed to the chamber wall of the vacuum chamber. The first heat-insulating member is located on the top of the top plate. The first heat-insulating member is provided with a through hole for passing through the second heating element. The second heat-insulating member is located at the bottom of the bottom plate and is sleeved outside the rotating assembly.

[0018] In some possible embodiments, the vacuum chamber is provided with a gas inlet, and the gas inlet is used for horizontally discharging gas and covering the horizontal plane of the substrate; and / or,

[0019] The chemical vapor deposition apparatus further includes a first temperature equalizing plate, and the first temperature equalizing plate is fixed at the top opening of the through hole. The substrate carrier is lapped on the first temperature equalizing plate; and / or,

[0020] The chemical vapor deposition apparatus further includes a third heat-insulating member, and the third heat-insulating member is disposed in the through hole and is sleeved outside the first heating element.

[0021] Advantages of the present invention:

[0022] The chemical vapor deposition apparatus provided by the present invention includes a vacuum chamber, a rotating assembly and a heating assembly. By combining the first heating element and the second heating element, the central region of the substrate is heated by the disc-shaped heating region of the first heating element, and the peripheral region of the substrate is heated by the annular heating region of the second heating element. While saving costs, the temperature uniformity of large-size substrates can be effectively controlled. In addition, it is also applicable to the heating of small-size substrates, so that the chemical vapor deposition apparatus has a wide range of applications. The disc-shaped heating region of the first heating element is disposed in the through hole, and the annular heating region of the second heating element is disposed on the side of the substrate carrier away from the through hole, which can ensure that the temperature difference between the upper and lower sides of the thermal field where the substrate is located is small, and the situation where the gas in the lower part expands and rises to the upper part and condenses and then descends will not occur. By driving the substrate carrier to rotate through the rotating assembly, the substrate is driven to rotate, which can ensure the quality of the epitaxial layer on the substrate, reduce surface defects, and make the thickness of the epitaxial layer more uniform. The first end of the first heating element is disposed in the through hole, which is convenient for heating the substrate while not affecting the rotation of the substrate by the rotating assembly. Description of the Drawings

[0023] Figure 1 is the first schematic structural view of the chemical vapor deposition equipment provided by the present invention;

[0024] Figure 2 is the second schematic structural view of the chemical vapor deposition equipment provided by the present invention;

[0025] Figure 3 is the sectional view of the chemical vapor deposition equipment provided by the present invention.

[0026] In the figure:

[0027] 1. Vacuum chamber; 11. First temperature measurement channel; 12. Second temperature measurement channel; 13. Gas inlet; 14. Chamber main body; 15. First flange; 16. Second flange; 17. Third flange; 18. Air extraction hole; 19. Transfer port;

[0028] 2. Rotating assembly; 21. Driving member; 22. Rotating member; 221. Through hole; 23. Substrate carrier;

[0029] 31. First heating member; 32. Second heating member; 321. Inner cavity;

[0030] 4. Top plate; 5. Bottom plate; 6. First heat insulation member; 7. Second heat insulation member; 8. First temperature equalizing plate; 81. Avoidance hole; 9. Third heat insulation member; 10. Second temperature equalizing plate; 20. Support. Detailed implementation manners

[0031] The present invention will be further described in detail below with reference to the accompanying drawings and embodiments. It can be understood that the specific embodiments described herein are only used to explain the present invention, rather than limiting the present invention. In addition, it should be noted that only the parts related to the present invention rather than all the structures are shown in the drawings for the convenience of description.

[0032] In the description of the present invention, unless otherwise clearly defined and limited, the terms "connected", "connected to", and "fixed" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or integrated; it can be a mechanical connection or an electrical connection; it can be directly connected or indirectly connected through an intermediate medium, and it can be the internal communication of two components or the interaction relationship between two components. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific situations.

[0033] In the present invention, unless otherwise clearly specified or limited, the first feature being "above" or "below" the second feature may include direct contact between the first and second features, or may include the first and second features not being in direct contact but in contact through additional features therebetween. Moreover, the first feature being "above", "over" and "on top of" the second feature includes the first feature being directly above and obliquely above the second feature, or merely indicating that the horizontal height of the first feature is higher than that of the second feature. The first feature being "below", "beneath" and "underneath" the second feature includes the first feature being directly below and obliquely below the second feature, or merely indicating that the horizontal height of the first feature is less than that of the second feature.

[0034] In the description of this embodiment, the orientation or positional relationships such as "upper", "lower", "right", etc. are based on the orientation or positional relationships shown in the drawings, and are only for the convenience of description and simplifying the operations, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as a limitation to the present invention. In addition, the terms "first" and "second" are only used for distinction in description and have no special meanings.

[0035] Such as Figures 1 to 3As shown in the figure, the present invention provides a chemical vapor deposition device, which can be specifically applied to high-temperature chemical vapor deposition or metal-organic chemical vapor deposition. In this embodiment, the chemical vapor deposition device is used to grow a high-quality epitaxial layer on a silicon carbide substrate. The chemical vapor deposition device includes a vacuum chamber 1, a rotation assembly 2 and a heating assembly. The rotation assembly 2 includes a driving member 21 and a rotating member 22. The rotating member 22 is rotatably connected to the chamber wall of the vacuum chamber 1. The rotating member 22 is provided with a through hole 221. A substrate carrier 23 is arranged at the top opening of the through hole 221. The substrate carrier 23 is used to carry the substrate. The driving member 21 is fixed to the vacuum chamber 1, and the output end of the driving member 21 is used to drive the rotating member 22 to rotate. The heating assembly includes a first heating member 31 and a second heating member 32. The first end of the first heating member 31 is located inside the through hole 221, that is, the first heating member 31 is located below the substrate carrier 23. The first end of the first heating member 31 has a disc-shaped heating area for heating the central area of the substrate. The second end of the first heating member 31 passes through the chamber wall of the vacuum chamber 1 and is fixed outside the vacuum chamber 1. Specifically, the chemical vapor deposition device further includes a support 20. The support 20 is fixed outside the vacuum chamber 1. The second end of the first heating member 31 passes through the chamber wall of the vacuum chamber 1 and is fixed to the support 20. The second heating member 32 is arranged on the side of the substrate carrier 23 away from the through hole 221, that is, the first heating member 31 is located above the substrate carrier 23. The first end of the second heating member 32 is located inside the vacuum chamber 1. The first end of the second heating member 32 has an annular heating area for heating the peripheral area of the substrate. The second end of the second heating member 32 passes through the chamber wall of the vacuum chamber 1 and is fixed outside the vacuum chamber 1. Here, the central area refers to a partial area extending from the center of the substrate outward, and the peripheral area refers to the area outside the central area.

[0036] Combining the first heating member 31 and the second heating member 32, heating the central area of the substrate through the disc-shaped heating area of the first heating member 31 and heating the peripheral area of the substrate through the annular heating area of the second heating member 32 can effectively control the temperature uniformity of a large-size substrate while saving costs. In addition, it is also applicable to heating small-size substrates, making the chemical vapor deposition device have a wide range of applications. Specifically, it can be compatible with 6-inch and 8-inch substrates. Arranging the disc-shaped heating area of the first heating member 31 inside the through hole 221 and arranging the annular heating area of the second heating member 32 on the side of the substrate carrier 23 away from the through hole 221 can ensure that the temperature difference between the upper and lower sides of the thermal field where the substrate is located is small, and the situation where the gas in the lower part expands and rises to the upper part and condenses and then drops will not occur. Driving the substrate carrier 23 to rotate through the rotation assembly 2 and driving the substrate to rotate can ensure the quality of the epitaxial layer on the substrate, reduce surface defects, and make the thickness of the epitaxial layer more uniform. Arranging the first heating member 31 inside the through hole 221 is convenient for heating the substrate and does not affect the rotation of the rotation assembly 2 on the substrate.

[0037] Optionally, in this embodiment, the projection of the annular heating zone on the disk-shaped heating zone partially overlaps with the disk-shaped heating zone. The partial overlap means that the overlapping part is the side line, that is, the projection of the annular heating zone on the disk-shaped heating zone coincides with the outer side line of the disk-shaped heating zone, or the overlapping part is an annular surface. Such a setting avoids the poor uniformity caused at the gap between the annular heating zone and the disk-shaped heating zone when the temperature is distributed along the thickness direction of the substrate, and can further ensure the temperature uniformity of the substrate. In addition, the specific overlap degree of the partial overlap of the projection of the annular heating zone on the disk-shaped heating zone can be determined according to the actual situation to ensure the temperature uniformity of the substrate.

[0038] Optionally, in this embodiment, the chemical vapor deposition equipment further includes a temperature measuring component. The temperature measuring component includes a first temperature measuring element and a second temperature measuring element. The first temperature measuring element is used to detect the temperature of the central area of the substrate. The first temperature measuring element is communicatively connected to the first heating element 31. The second temperature measuring element is used to detect the temperature of the peripheral area of the substrate. The second temperature measuring element is communicatively connected to the first temperature measuring element and is communicatively connected to the second heating element 32. By providing the first temperature measuring element and the second temperature measuring element, the temperature of the substrate is monitored separately, and the temperature data is transmitted to the first heating element 31 and the second heating element 32 respectively to accurately control the temperature of the substrate. By communicatively connecting the second temperature measuring element to the first temperature measuring element, the temperature uniformity of the whole substrate can be ensured.

[0039] Optionally, in this embodiment, both the first temperature measuring element and the second temperature measuring element are infrared temperature sensors. The second heating element 32 is provided with an inner cavity 321. The chamber wall of the vacuum chamber 1 is provided with a first temperature measuring channel 11 and a second temperature measuring channel 12 that are both communicated with the inner cavity 321. The first temperature measuring element is located outside the vacuum chamber 1 and is arranged at the opening of the first temperature measuring channel 11. The second temperature measuring element is located outside the vacuum chamber 1 and is arranged at the opening of the second temperature measuring channel 12. Using an infrared temperature sensor to detect the infrared radiation emitted by the substrate for temperature measurement does not require direct contact with the substrate, which can avoid contamination, abrasion or damage caused by contact. On the basis of providing the first temperature measuring channel 11 and the second temperature measuring channel 12 on the chamber wall of the vacuum chamber 1, the inner cavity 321 of the second heating element 32 can be used as a common temperature measuring channel for the first temperature measuring element and the second temperature measuring element, with a compact structure and convenient temperature measurement of the substrate. In addition, the first temperature measuring element and the second temperature measuring element are located outside the vacuum chamber 1, which is convenient for installing the first temperature measuring element and the second temperature measuring element.

[0040] Optionally, both the first heating element 31 and the second heating element 32 are graphite resistive heaters. In addition, the power control module of the graphite resistive heater is used to control the heating temperature. Using a graphite resistive heater to perform non-contact radiation heating on the substrate carrier 23 can meet the process temperature requirements, and radiation heating does not require contact with the substrate carrier 23, which can avoid generating mechanical stress on the substrate carrier 23.

[0041] Optionally, the vacuum chamber 1 is provided with a gas inlet 13 for introducing a carrier gas or a process gas; the heating temperature on the side of the second heating element 32 close to the gas inlet 13 is higher than the heating temperature on the side of the second heating element 32 away from the gas inlet 13. Since the temperature of the periphery of the substrate on the side close to the gas inlet 13 is lower than the temperature of the periphery of the substrate on the side away from the gas inlet 13, the above arrangement can ensure the temperature uniformity of the substrate periphery. Specifically, the carrier gas is hydrogen. Before introducing the process gas, the carrier gas is introduced first, which can make the thermal field where the substrate is located more uniform. In this embodiment, the gas inlet 13 is used to horizontally discharge the gas and cover the horizontal plane of the substrate. Here, the gas refers to the carrier gas or the process gas. With such an arrangement, the process gas can flow parallel to the substrate surface, and an epitaxial layer of higher quality can be obtained.

[0042] Optionally, there are two second temperature measuring elements, both of which are communicatively connected to the second heating element 32 and are also communicatively connected to the first temperature measuring element. One of the second temperature measuring elements is arranged on the side of the second heating element 32 close to the gas inlet 13, and the other second temperature measuring element is arranged on the side of the second heating element 32 away from the gas inlet 13. The average value of the temperatures measured by the two second temperature measuring elements is taken and compared and coupled with the temperature of the first temperature measuring element. The two second temperature measuring elements control the power of the second heating element 32, and the first temperature measuring element controls the power of the first heating element 31 to achieve the control of the overall temperature of the substrate and the control of temperature uniformity.

[0043] Optionally, the vacuum chamber 1 includes a chamber body 14, a first flange 15 and a second flange 16. The top of the chamber body 14 is provided with a first mounting opening, the first flange 15 is detachably connected to the first mounting opening, the second heating element 32 is detachably connected to the first flange 15, the bottom of the chamber body 14 is provided with a second mounting opening, the second flange 16 is detachably connected to the second mounting opening, and the rotating assembly 2 is detachably connected to the second flange 16. Through the above arrangement, it is convenient to disassemble and assemble the second heating element 32 and the rotating assembly 2. Specifically, the first flange 15 is fixed to the first mounting opening by bolts, and the second flange 16 is fixed to the second mounting opening by bolts. In addition, the gas inlet 13 is arranged on the chamber body 14. Specifically, the first flange 15 is provided with three third flanges 17, and the three third flanges 17 are respectively used to mount one first temperature measuring element and two second temperature measuring elements. The middle of the third flange 17 is hollowed out and used as a temperature measuring channel. In addition, the three third flanges 17 are located on the same straight line.

[0044] Optionally, sealing rings are provided between the first flange 15 and the chamber body 14 and between the second flange 16 and the chamber body 14 for sealing. In addition, the material of the chamber body 14 is stainless steel. Using stainless steel material makes the chamber body 14 have better vacuum tightness and can maintain the vacuum degree in the chamber body 14.

[0045] Optionally, the driving member 21 is a magnetic coupling rotator. By setting the magnetic coupling rotator, the rotation speed and precision of the substrate can be controlled. The magnetic coupling rotator belongs to the mature technology in the relevant field, and this embodiment will not be repeated. Optionally, the rotating member 22 is a rotating tube, and the inner cavity 321 of the rotating tube is used as the penetration hole 221. Specifically, the driving member 21 is located outside the vacuum chamber 1 and inside the support 20.

[0046] In addition, the chemical vapor deposition equipment also includes a first temperature averaging plate 8, which is fixed at the top opening of the through hole 221, and the substrate carrier 23 is overlapped on the first temperature averaging plate 8. The first temperature averaging plate 8 can transfer the heat radiated by the first heating element 31 to the substrate carrier 23 along the thickness direction of the first temperature averaging plate 8, and can make the temperature distribution uniform, thereby making the temperature distribution in the central area of the substrate more uniform. The magnetic coupling rotator drives the rotating member 22 to rotate, and the rotating member 22 drives the first temperature averaging plate 8 to rotate, thereby driving the substrate carrier 23 and the substrate on the substrate carrier 23 to rotate.

[0047] Optionally, the chemical vapor deposition equipment also includes a top plate 4 and a bottom plate 5, both of which are fixed in the vacuum chamber 1, the top plate 4 is located on the side of the second heating element 32 close to the first heating element 31, the bottom plate 5 is sleeved outside the rotating assembly 2, the top plate 4, the bottom plate 5 and the cavity wall of the vacuum chamber 1 are surrounded to form a process chamber, and the vacuum chamber 1 is provided with a gas inlet 13, and the gas inlet 13 is connected to the process chamber. In this way, the process gas is restricted in the process chamber, which helps the process gas flow in the horizontal direction. Specifically, the top plate 4 and the bottom plate 5 are both fixed on the cavity wall of the vacuum chamber 1. Optionally, the bottom of the vacuum chamber 1 is provided with an exhaust hole 18, and the exhaust hole 18 is located on the side of the rotating assembly 2 away from the gas inlet 13, and the exhaust hole 18 is used to connect the vacuum pump group. After the process gas enters the process chamber through the gas inlet 13, it passes through the process chamber, and the vacuum pump group extracts the process gas from the process chamber.

[0048] Optionally, the vacuum chamber 1 is further provided with a transfer port 19 , which is located on a side of the rotating assembly 2 away from the gas inlet 13 , and is communicated with the process chamber for a robot to transfer substrates.

[0049] Optionally, the chemical vapor deposition equipment further includes a first heat-insulating member 6 and a second heat-insulating member 7, both of which are fixed to the cavity wall of the vacuum chamber 1, the first heat-insulating member 6 is located at the top of the top plate 4, the first heat-insulating member 6 is provided with a through-hole for passing the second heating member 32, and the second heat-insulating member 7 is located at the bottom of the bottom plate 5 and is sleeved outside the rotating assembly 2. By providing the first heat-insulating member 6 and the second heat-insulating member 7, the temperature distribution in the vacuum chamber 1 is more balanced. Specifically, the second heating member 32 passes through the through-hole and is fixed to the cavity top wall of the vacuum chamber 1.

[0050] Specifically, the bottom plate 5 is provided with first round holes, and the second heat-insulating member 7 is provided with second round holes communicating with the first round holes, and the second round holes communicate with the air extraction holes 18. With such a setting, it is convenient to extract the process gas from the process chamber. In addition, the first heat-insulating member 6 is provided with three communication holes, and the three communication holes communicate with one first temperature measurement channel 11 and two second temperature measurement channels 12 in one-to-one correspondence, and the three communication holes are used as channels for temperature measurement.

[0051] Optionally, the materials of the first heat-insulating member 6 and the second heat-insulating member 7 are both clean heat-insulating materials, and the materials of the top plate 4, the bottom plate 5 and the substrate carrier 23 are all high-temperature resistant and clean materials.

[0052] In addition, the chemical vapor deposition equipment further includes a second temperature equalizing plate 10. The second temperature equalizing plate 10 penetrates through the top plate 4 and is fixed to the first heat-insulating member 6. The second temperature equalizing plate 10 can conduct the heat radiated by the first heating element 31 along the thickness direction of the second temperature equalizing plate 10 to the substrate, and make the temperature distribution in the peripheral area of the substrate more uniform. In addition, in this embodiment, in order to facilitate the handling of the substrate, an avoidance hole 81 communicating with the through hole 221 is provided at the bottom end of the first temperature equalizing plate 8. In other embodiments, the second temperature equalizing plate 10 is not provided with the avoidance hole 81, and all the heat radiated by the first heating element 31 is radiated to the second temperature equalizing plate 10. The first temperature equalizing plate 8 and the second temperature equalizing plate 10 in this embodiment both belong to mature technologies in the related field, and this embodiment will not elaborate on them here.

[0053] Optionally, the chemical vapor deposition equipment further includes a third heat-insulating member 9. The third heat-insulating member 9 is disposed in the through hole 221 and sleeved outside the first heating element 31. By providing the third heat-insulating member 9, the thermal field distribution in the through hole 221 is made more uniform. Further, the third heat-insulating member 9 is a heat-insulating pipe, and the outer wall of the heat-insulating pipe is cylindrical. By providing the first heat-insulating member 6, the second heat-insulating member 7 and the third heat-insulating member 9, the chemical vapor deposition equipment has excellent heat-insulating performance and high heating efficiency.

[0054] In addition, the chemical vapor deposition equipment further includes a water-cooling component, and the water-cooling component can cool the outer wall of the vacuum chamber 1, further improving the safety and reliability.

[0055] The process flow of the chemical vapor deposition equipment is as follows: The manipulator places the substrate on the substrate carrier 23, turns on the first heating element 31 and the second heating element 32 and introduces the carrier gas to heat the substrate, and at the same time turns on the rotating assembly 2 to drive the substrate carrier 23 to rotate. After the substrate reaches the temperature required by the process, the process gas is introduced to deposit a thin film on the substrate. During this period, a first temperature measuring element and two second temperature measuring elements monitor the temperature of the substrate throughout the process, and cooperate with the power control modules of the first heating element 31 and the second heating element 32 to precisely control the temperature of the substrate for uniform temperature. After the thin film deposition is completed, the process gas is stopped, the rotation is stopped, and the first heating element 31 and the second heating element 32 are turned off to cool the substrate. After the substrate is cooled to an appropriate temperature, it is removed by the manipulator outside the vacuum chamber 1 to complete the deposition.

[0056] Specific heating process: The disk-shaped heating area of the first heating element 31 radiatively heats the substrate carrier 23 and the first temperature equalizing plate 8, the substrate carrier 23 conducts contact heating on the substrate, and the annular heating area of the second heating element 32 radiatively heats the second temperature equalizing plate 10, and the second temperature equalizing plate 10 conducts radiative heating on the substrate.

[0057] Obviously, the above-mentioned embodiments of the present invention are only examples for clearly illustrating the present invention, and are not intended to limit the implementation manners of the present invention. For those of ordinary skill in the art, various obvious changes, re-adjustments and substitutions can be made without departing from the protection scope of the present invention. It is not necessary and impossible to enumerate all the implementation manners here. Any modifications, equivalent substitutions and improvements made within the spirit and principle of the present invention shall be included in the protection scope of the claims of the present invention.

Claims

1. A chemical vapor deposition device, characterized in that, Comprising: A vacuum chamber (1); A rotating assembly (2), including a driving member (21) and a rotating member (22), the rotating member (22) is rotatably connected to the chamber wall of the vacuum chamber (1), the rotating member (22) is provided with a through hole (221), a substrate carrier (23) is arranged at the top opening of the through hole (221), and the substrate carrier (23) is used for carrying a substrate; the driving member (21) is fixed to the vacuum chamber (1), and the output end of the driving member (21) is used for driving the rotating member (22) to rotate; A heating assembly, including a first heating member (31) and a second heating member (32), the first end of the first heating member (31) is located in the through hole (221), the first end of the first heating member (31) has a disc-shaped heating area for heating the central area of the substrate, the second end of the first heating member (31) passes through the chamber wall of the vacuum chamber (1) and is fixed outside the vacuum chamber (1); the second heating member (32) is arranged on the side of the substrate carrier (23) away from the through hole (221), the first end of the second heating member (32) is located inside the vacuum chamber (1), the first end of the second heating member (32) has an annular heating area for heating the peripheral area of the substrate, and the second end of the second heating member (32) passes through the chamber wall of the vacuum chamber (1) and is fixed outside the vacuum chamber (1).

2. The chemical vapor deposition apparatus according to claim 1, wherein The projection of the annular heating area on the disc-shaped heating area partially coincides with the annular heating area.

3. The chemical vapor deposition apparatus according to claim 1, wherein The chemical vapor deposition device further includes a temperature measuring assembly, the temperature measuring assembly includes a first temperature measuring member and a second temperature measuring member, the first temperature measuring member is used for detecting the temperature of the central area of the substrate, the first temperature measuring member is communicatively connected to the first heating member (31), the second temperature measuring member is used for detecting the temperature of the peripheral area of the substrate, the second temperature measuring member is communicatively connected to the first temperature measuring member and communicatively connected to the second heating member (32).

4. The chemical vapor deposition apparatus according to claim 3, wherein Both the first temperature measuring member and the second temperature measuring member are infrared temperature sensors, the second heating member (32) is provided with an inner cavity (321), and the chamber wall of the vacuum chamber (1) is provided with a first temperature measuring channel (11) and a second temperature measuring channel (12) both communicating with the inner cavity (321), the first temperature measuring member is located outside the vacuum chamber (1) and arranged at the opening of the first temperature measuring channel (11), and the second temperature measuring member is located outside the vacuum chamber (1) and arranged at the opening of the second temperature measuring channel (12).

5. The chemical vapor deposition apparatus according to claim 3, wherein The vacuum chamber (1) is provided with a gas inlet (13), and the heating temperature of one side of the second heating member (32) close to the gas inlet (13) is greater than the heating temperature of the side of the second heating member (32) away from the gas inlet (13).

6. The chemical vapor deposition apparatus according to claim 5, wherein There are two second temperature measuring elements, both of which are communicatively connected to the second heating element (32), and both of which are communicatively connected to the first temperature measuring element. One of the second temperature measuring elements is arranged on the side of the second heating element (32) close to the gas inlet (13), and the other second temperature measuring element is arranged on the side of the second heating element (32) far from the gas inlet (13).

7. The chemical vapor deposition apparatus according to claim 1, characterized in that, The driving element (21) is a magnetic coupling rotator.

8. The chemical vapor deposition apparatus according to claim 1, wherein The chemical vapor deposition equipment further includes a top plate (4) and a bottom plate (5). The top plate (4) and the bottom plate (5) are both fixed in the vacuum chamber (1). The top plate (4) is located on the side of the second heating element (32) close to the first heating element (31). The bottom plate (5) is sleeved outside the rotating assembly (2). The top plate (4), the bottom plate (5) and the chamber wall of the vacuum chamber (1) enclose a process chamber. The vacuum chamber (1) is provided with a gas inlet (13), and the gas inlet (13) is communicated with the process chamber.

9. The chemical vapor deposition apparatus according to claim 8, wherein, The chemical vapor deposition equipment further includes a first heat preservation element (6) and a second heat preservation element (7). The first heat preservation element (6) and the second heat preservation element (7) are both fixed on the chamber wall of the vacuum chamber (1). The first heat preservation element (6) is located on the top of the top plate (4). The first heat preservation element (6) is provided with a through hole for passing through the second heating element (32). The second heat preservation element (7) is located at the bottom of the bottom plate (5) and is sleeved outside the rotating assembly (2).

10. The chemical vapor deposition apparatus according to claim 1, wherein The vacuum chamber (1) is provided with a gas inlet (13), and the gas inlet (13) is used for horizontally discharging gas to cover the horizontal plane of the substrate; and / or, The chemical vapor deposition equipment further includes a first temperature equalizing plate (8). The first temperature equalizing plate (8) is fixed at the top opening of the through hole (221), and the substrate carrier (23) is lapped on the first temperature equalizing plate (8); and / or, The chemical vapor deposition equipment further includes a third heat preservation element (9). The third heat preservation element (9) is arranged in the through hole (221) and is sleeved outside the first heating element (31).

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