Gallium nitride ultraviolet partial discharge sensor system and its control method, medium and equipment

Abstract

The present invention discloses a gallium nitride ultraviolet partial discharge sensor system and its control method, medium, and equipment, relating to the technical field of gallium nitride ultraviolet partial discharge sensors. The gallium nitride ultraviolet partial discharge sensor system includes a gallium nitride ultraviolet partial discharge sensor and a back-end computing circuit. The method includes: obtaining the output voltage of the gallium nitride ultraviolet partial discharge sensor; comparing the output voltage with a preset voltage threshold, wherein the preset voltage threshold is a threshold value obtained based on a baseline voltage, which is the voltage output by the gallium nitride ultraviolet partial discharge sensor when no input signal is present; when the output voltage is less than or equal to the preset voltage threshold and the back-end computing circuit has no computing tasks, controlling the back-end computing circuit to enter a low-power sleep mode. This can reduce the power consumption of the gallium nitride ultraviolet partial discharge sensor system.

Description

Technical Field

[0001] The present invention relates to the technical field of gallium nitride ultraviolet partial discharge sensors, and in particular to a gallium nitride ultraviolet partial discharge sensor system and a control method, medium, and equipment thereof. Background Art

[0002] Partial discharge (PD) refers to the localized discharge of electrical charge in high-voltage electrical equipment caused by excessive electric field strength or internal defects. This can alter the structure of insulating materials, reducing their insulation performance, thereby impacting normal equipment operation and even causing safety incidents. Therefore, the use of GaN UV PD sensors for PD detection is crucial.

[0003] However, the GaN-based UV PD sensor system in related art includes a GaN UV PD sensor unit and a back-end computing circuit, typically operating in continuous mode. The GaN UV PD sensor unit includes a GaN UV PD sensor, and the back-end computing circuit includes a signal amplification module, an ADC (Analog-to-Digital Converter), a DSP (Digital Signal Processor) / FPGA (Field Programmable Gate Array), etc. To ensure the detection capability of the GaN UV PD sensor system, the GaN UV PD sensor unit and the back-end computing circuit are always in full-time operation. The back-end computing circuit consumes up to 200mW of power, resulting in excessive power consumption of the GaN UV PD sensor system. This limits the application of the GaN UV PD sensor system in remote monitoring or battery-powered scenarios. Summary of the Invention

[0004] The present invention aims to at least partially solve one of the technical problems in the related art. To this end, a first object of the present invention is to provide a control method for a GaN ultraviolet partial discharge sensor system to reduce the power consumption of the GaN ultraviolet partial discharge sensor system.

[0005] A second object of the present invention is to provide a computer-readable storage medium.

[0006] A third object of the present invention is to provide an electronic device.

[0007] A fourth objective of the present invention is to provide a gallium nitride ultraviolet partial discharge sensor system.

[0008] To achieve the above-mentioned objectives, an embodiment of the first aspect of the present invention proposes a gallium nitride ultraviolet partial discharge sensor system control method, wherein the gallium nitride ultraviolet partial discharge sensor system includes a gallium nitride ultraviolet partial discharge sensor and a back-end computing circuit, and the method includes: obtaining the output voltage of the gallium nitride ultraviolet partial discharge sensor; comparing the output voltage with a preset voltage threshold, wherein the preset voltage threshold is a threshold obtained according to a baseline voltage, and the baseline voltage is the voltage output by the gallium nitride ultraviolet partial discharge sensor when there is no input signal; when the output voltage is less than or equal to the preset voltage threshold and the back-end computing circuit has no computing task, controlling the back-end computing circuit to enter a low-power sleep mode.

[0009] In addition, the GaN ultraviolet partial discharge sensor system control method according to the embodiment of the present invention may also have the following additional technical features:

[0010] According to one embodiment of the present invention, the method further includes: when the output voltage is greater than the preset voltage threshold and the back-end computing circuit is in the low-power sleep mode, controlling the back-end computing circuit to exit the low-power sleep mode.

[0011] According to one embodiment of the present invention, when the back-end computing circuit is in the low-power sleep mode, the method further includes: controlling the back-end computing circuit to exit the low-power sleep mode at preset time intervals, so that the back-end computing circuit performs performance testing on the gallium nitride ultraviolet partial discharge sensor.

[0012] According to one embodiment of the present invention, the performance test of the GaN UV PD sensor includes performing time drift calculation and temperature drift calculation on the GaN UV PD sensor.

[0013] According to one embodiment of the present invention, the preset voltage threshold is obtained according to the following formula:

[0014] Vth=Vb+k×σnoise,

[0015] Among them, Vth is the preset voltage threshold, Vb is the baseline voltage, k is a preset coefficient, σnoise is the noise voltage, and the noise voltage is the voltage output by the gallium nitride ultraviolet partial discharge sensor in response to the ambient noise of the environment in which the gallium nitride ultraviolet partial discharge sensor is located.

[0016] According to one embodiment of the present invention, the method for determining the preset time includes: obtaining a historical occurrence frequency of partial discharge events in a monitoring area of ​​the gallium nitride ultraviolet partial discharge sensor; and determining the preset time according to the historical occurrence frequency.

[0017] According to one embodiment of the present invention, the method for determining the preset time includes: predicting the probability of occurrence of a partial discharge event in a monitoring area of ​​the gallium nitride ultraviolet partial discharge sensor; and determining the preset time according to the probability of occurrence.

[0018] To achieve the above objectives, a second embodiment of the present invention provides a computer-readable storage medium having a computer program stored thereon. When the computer program is executed by a processor, the above-mentioned gallium nitride ultraviolet partial discharge sensor system control method is implemented.

[0019] To achieve the above-mentioned objectives, the third aspect of the present invention proposes an electronic device, comprising a memory, a processor, and a computer program stored in the memory and running on the processor. When the computer program is executed by the processor, the above-mentioned gallium nitride ultraviolet partial discharge sensor system control method is implemented.

[0020] To achieve the above-mentioned objectives, a fourth embodiment of the present invention provides a gallium nitride ultraviolet partial discharge sensor system, including the above-mentioned electronic device.

[0021] According to embodiments of the present invention, a GaN UV PD sensor system, control method thereof, storage medium, and electronic device are configured to obtain the output voltage of the GaN UV PD sensor; compare the output voltage with a preset voltage threshold, where the preset voltage threshold is a threshold derived from a baseline voltage; and control the back-end computing circuit to enter a low-power sleep mode when the output voltage is less than or equal to the preset voltage threshold and the back-end computing circuit has no computing tasks. Thus, by controlling the back-end computing circuit to enter a low-power sleep mode when there is no input signal, the power consumption of the GaN UV PD sensor system is reduced.

[0022] Additional aspects and advantages of the present invention will be set forth in part in the description which follows and, in part, will be obvious from the description which follows, or may be learned through practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 is a flow chart of a gallium nitride ultraviolet partial discharge sensor system control method according to an embodiment of the present invention;

[0024] Figure 2 This is a flow chart of a method for controlling a gallium nitride ultraviolet partial discharge sensor system according to an example of the present invention;

[0025] Figure 3 is a flow chart of another exemplary gallium nitride ultraviolet partial discharge sensor system control method of the present invention;

[0026] Figure 4 is a structural block diagram of an electronic device according to an embodiment of the present invention;

[0027] Figure 5 4 is a structural block diagram of a gallium nitride ultraviolet partial discharge sensor system according to an embodiment of the present invention. DETAILED DESCRIPTION

[0028] The following describes a gallium nitride ultraviolet partial discharge sensor system and its control method, medium, and device according to embodiments of the present invention with reference to the accompanying drawings. Throughout, identical or similar reference numerals represent identical or similar components or components having identical or similar functions. The embodiments described with reference to the accompanying drawings are illustrative only and are not to be construed as limiting the present invention.

[0029] Figure 1 This is a flow chart of a gallium nitride ultraviolet partial discharge sensor system control method according to an embodiment of the present invention.

[0030] In an embodiment of the present invention, a gallium nitride ultraviolet partial discharge sensor system includes a gallium nitride ultraviolet partial discharge sensor and a back-end computing circuit.

[0031] like Figure 1 As shown, the GaN ultraviolet partial discharge sensor system control method includes:

[0032] S11, obtaining the output voltage of the gallium nitride ultraviolet partial discharge sensor.

[0033] Specifically, the GaN UVPD sensor system includes a GaN UVPD sensor for detection and outputting a voltage, and a back-end computing circuit, which includes a signal amplification module, an ADC, a DSP / FPGA, and other components for calculating the GaN UVPD sensor's output voltage to obtain a detection result. Thus, the GaN UVPD sensor's output voltage can be directly acquired, either in real time or at preset time intervals.

[0034] S12, comparing the output voltage with a preset voltage threshold, wherein the preset voltage threshold is a threshold obtained according to a baseline voltage, and the baseline voltage is a voltage output by the GaN ultraviolet partial discharge sensor when there is no input signal.

[0035] Specifically, in order to realize judgment based on output voltage, it is necessary to first obtain the baseline voltage of the gallium nitride ultraviolet partial discharge sensor. The above-mentioned baseline voltage refers to the output voltage of the gallium nitride ultraviolet partial discharge sensor in the absence of an input signal. For example, assuming that the above-mentioned gallium nitride ultraviolet partial discharge sensor is a gallium nitride ultraviolet partial discharge sensor, the input signal of the gallium nitride ultraviolet partial discharge sensor is ultraviolet light irradiation, that is, the baseline voltage of the gallium nitride ultraviolet partial discharge sensor refers to the output voltage of the gallium nitride ultraviolet partial discharge sensor in the absence of ultraviolet light irradiation.

[0036] Since the baseline voltage refers to the output voltage of the GaN UV partial discharge sensor when there is no input signal, and if the GaN UV partial discharge sensor receives an input signal, the output voltage of the GaN UV partial discharge sensor will rise. At the same time, since the output voltage of the GaN UV partial discharge sensor will fluctuate, that is, the real-time output voltage of the GaN UV partial discharge sensor in the absence of an input signal is not absolutely fixed, the baseline voltage obtained at a certain moment is not always consistent with the output voltage of the GaN UV partial discharge sensor in the absence of an input signal. Therefore, a preset voltage threshold is set according to the baseline voltage to eliminate the influence of the output voltage fluctuation of the GaN UV partial discharge sensor on subsequent judgments.

[0037] After obtaining the preset voltage threshold and acquiring the output voltage of the GaN ultraviolet partial discharge sensor, the output voltage of the GaN ultraviolet partial discharge sensor can be compared with the preset voltage threshold, and the current state of the GaN ultraviolet partial discharge sensor can be determined according to the comparison result.

[0038] S13, when the output voltage is less than or equal to the preset voltage threshold and the back-end computing circuit has no computing task, controlling the back-end computing circuit to enter a low-power sleep mode.

[0039] Specifically, if the output voltage is less than or equal to a preset voltage threshold, it indicates that there is currently no input signal to the GaN UV PD sensor. If the GaN UV PD sensor is a GaN UV PD sensor, this indicates that there is currently no UV light irradiating the GaN UV PD sensor, that is, there is no suspected partial discharge within the detection area of ​​the GaN UV PD sensor. At this time, if the back-end computing circuit has no computing tasks, it can be put into a low-power sleep mode, leaving only the GaN UV PD sensor in operation, thereby reducing power consumption.

[0040] Thus, a method is provided to obtain the output voltage of the GaN ultraviolet partial discharge sensor; compare the output voltage with a preset voltage threshold, where the preset voltage threshold is a threshold value obtained based on the baseline voltage; and when the output voltage is less than or equal to the preset voltage threshold and the back-end computing circuit has no computing tasks, control the back-end computing circuit to enter a low-power sleep mode. This method reduces the power consumption of the GaN ultraviolet partial discharge sensor system.

[0041] In some embodiments of the present invention, the gallium nitride ultraviolet partial discharge sensor system control method further includes: when the output voltage is greater than a preset voltage threshold and the back-end computing circuit is in a low-power sleep mode, controlling the back-end computing circuit to exit the low-power sleep mode.

[0042] Specifically, when the back-end computing circuit is in a low-power sleep mode, if the output voltage of the gallium nitride ultraviolet partial discharge sensor is greater than a preset voltage threshold, it can be considered that there is currently an input signal input into the gallium nitride ultraviolet partial discharge sensor. If the gallium nitride ultraviolet partial discharge sensor is a gallium nitride ultraviolet partial discharge sensor, it means that ultraviolet light is irradiating the gallium nitride ultraviolet partial discharge sensor, that is, partial discharge is suspected to occur in the detection area of ​​the gallium nitride ultraviolet partial discharge sensor. The back-end computing circuit exits the low-power sleep mode and performs calculations to determine whether partial discharge has indeed occurred.

[0043] It can be seen that by setting only the back-end computing circuit in the GaN UV PD sensor system to sleep, while the GaN UV PD sensor in the GaN UV PD sensor system does not sleep, it is possible to reduce the power consumption of the GaN UV PD sensor system while preventing it from affecting detection.

[0044] In some embodiments of the present invention, when the back-end computing circuit is in a low-power sleep mode, the gallium nitride ultraviolet partial discharge sensor system control method further includes: controlling the back-end computing circuit to exit the low-power sleep mode at preset time intervals, so that the back-end computing circuit performs performance testing on the gallium nitride ultraviolet partial discharge sensor.

[0045] Specifically, in order to prevent the error accumulation of the GaN UV partial discharge sensor during operation or the aging of the GaN UV partial discharge sensor from affecting the detection, it is necessary to control the back-end computing circuit to perform performance testing on the GaN UV partial discharge sensor at preset intervals to offset the impact of error accumulation or aging of the GaN UV partial discharge sensor on the GaN UV partial discharge sensor.

[0046] The following combination Figure 2 The specific embodiment shown is used for illustration. In this specific embodiment, the gallium nitride ultraviolet partial discharge sensor is a gallium nitride ultraviolet partial discharge sensor. In this specific embodiment, in order to simulate the ultraviolet light generated by partial discharge, a ultraviolet light source with a frequency of 10 kHz and a power of 8 μW is provided. This ultraviolet light source irradiates the gallium nitride ultraviolet partial discharge sensor at a preset time.

[0047] Specifically, baseline detection is continuously performed, and the output obtained by the detection is compared with the dynamic threshold, the baseline detection refers to detection using the above-mentioned baseline voltage, the output refers to the above-mentioned output voltage, and the dynamic threshold refers to the above-mentioned preset voltage threshold.

[0048] When at a certain moment, the output voltage is greater than the preset voltage threshold, it means that the above-mentioned ultraviolet light source irradiates the gallium nitride ultraviolet partial discharge sensor, and the back-end computing circuit exits the low-power sleep mode. The calculation module in the back-end computing circuit calculates the output voltage of the gallium nitride ultraviolet partial discharge sensor and performs data processing based on the calculation results.

[0049] After data processing, a sleep decision can be made to determine whether the back-end computing circuit needs to be controlled to enter a low-power sleep mode.

[0050] After determining that the back-end computing circuit enters the low-power sleep mode, the back-end computing circuit enters the sleep period.

[0051] Moreover, a trigger period is set for the back-end computing circuit. If the back-end computing circuit is in a sleep period and enters the trigger period, the back-end computing circuit is controlled to exit the low-power sleep mode, so that the back-end computing circuit can perform performance testing on the gallium nitride ultraviolet partial discharge sensor.

[0052] In some embodiments of the present invention, a performance test is performed on a GaN ultraviolet partial discharge sensor, including performing a time drift calculation and a temperature drift calculation on the GaN ultraviolet partial discharge sensor.

[0053] In some embodiments of the present invention, the preset voltage threshold is obtained according to the following formula:

[0054] Vth=Vb+k×σnoise,

[0055] Wherein, Vth is a preset voltage threshold, Vb is a baseline voltage, k is a preset coefficient, σnoise is a noise voltage, and the noise voltage is a voltage output by the GaN UV PD sensor in response to the ambient noise of the environment in which the GaN UV PD sensor is located.

[0056] That is, because the GaN UV PD sensor operates in an environment with ambient noise—for example, if the GaN UV PD sensor is a GaN UV PD sensor, then the UV light emitted by the sun can be considered the ambient noise in the environment in which the GaN UV PD sensor operates. This ambient noise is an interference signal that also enters the GaN UV PD sensor, causing it to output a voltage. The voltage output by the GaN UV PD sensor after the interference signal is input is the aforementioned noise voltage.

[0057] Through the above method, dynamic confirmation of the preset voltage threshold can be achieved.

[0058] In some embodiments of the present invention, a method for determining a preset time includes: obtaining a historical occurrence frequency of partial discharge events within a monitoring area of ​​a gallium nitride ultraviolet partial discharge sensor; and determining the preset time based on the historical occurrence frequency.

[0059] Specifically, it is necessary to obtain the historical frequency of partial discharge events in the monitoring area of ​​the gallium nitride ultraviolet partial discharge sensor. For example, the frequency of partial discharge events in the past 10 days at the moment of the preset time is obtained based on the saved records to obtain the historical frequency.

[0060] After obtaining the historical frequency of occurrence, the preset time can be determined based on the historical frequency of occurrence. For example, a standard time can be set in advance. If the historical frequency of occurrence is high, the standard time can be shortened appropriately and the shortened standard time can be used as the preset time. If the historical frequency of occurrence is low, the standard time can be extended appropriately and the extended standard time can be used as the preset time.

[0061] In some embodiments of the present invention, a method for determining a preset time includes: predicting a probability of occurrence of a partial discharge event within a monitoring area of ​​a gallium nitride ultraviolet partial discharge sensor; and determining the preset time according to the probability of occurrence.

[0062] Specifically, in order to determine the preset time, a neural network can be pre-trained. For example, a LSTM (Long Short-Term Memory) neural network can be trained using historical records of partial discharge events within the monitoring area of ​​the gallium nitride ultraviolet partial discharge sensor.

[0063] After the neural network is trained, the probability of occurrence of a partial discharge event is predicted using the neural network. For example, the probability of occurrence of a partial discharge event in the monitoring area of ​​the gallium nitride ultraviolet partial discharge sensor within the next hour at a predetermined time can be predicted.

[0064] After the probability of occurrence is predicted, the preset time can be determined based on the probability of occurrence. For example, a standard time can be set in advance. If the probability of occurrence is high, the standard time can be shortened appropriately and the shortened standard time can be used as the preset time. If the probability of occurrence is low, the standard time can be extended appropriately and the extended standard time can be used as the preset time.

[0065] Determining the time based on historical frequency of occurrence requires overcoming the dual constraints of data reliability and timeliness. Partial discharge events are sporadic and non-periodic, so the collection of historical data requires a long-term, stable monitoring system. This requires both avoiding sample loss due to GaN UV PD sensor failure or data loss, and overcoming the potential interference of various environmental factors (such as temperature, humidity, and equipment aging) on ​​the stability and sensitivity of GaN UV PD sensors. UV detector chips made from GaN, a wide-bandgap third-generation semiconductor material, fully exploit the advantages of GaN's wide bandgap properties.

[0066] Gallium nitride (GaN) material has high electron mobility and low on-resistance, enabling GaN-based UV detectors to operate at low voltages, effectively reducing power consumption. Furthermore, GaN's wide bandgap makes it highly sensitive to UV light, enabling accurate detection of UV signals generated by partial discharge events even under low-intensity conditions. GaN's high thermal conductivity (approximately 1.3 W / cm·K) improves heat dissipation, effectively reducing temperature fluctuations during chip operation and preventing performance degradation or failure caused by high temperatures. The wide bandgap reduces leakage current, reducing static power consumption and abnormal current interference with the circuit, ensuring signal stability during long-term operation. Therefore, using GaN-based UV sensor chips can significantly reduce the effects of temperature, aging, and other factors on GaN UV PD sensors, providing stable and sensitive monitoring of PD activity in monitored equipment and significantly improving the performance and reliability of PD monitoring systems. This long-term, stable, and sensitive monitoring, with an extremely low false alarm rate, addresses the underlying data challenges of low-frequency, sporadic, and non-periodic PD events. After the GaN UV PD sensor obtains accurate PD data, it can more accurately predict the probability of PD events within the monitoring area of ​​the GaN UV PD sensor, and then determine the preset time based on the probability of occurrence.

[0067] In the dynamic coordination process of determining the preset time, the difficult problem of balancing power consumption and performance must be overcome. Traditional fixed wake-up cycle solutions have limitations. Either the performance detection is delayed due to the cycle being too long (the drift anomaly of the GaN UV PD sensor may not be discovered in time), or unnecessary power consumption is wasted due to the cycle being too short. The present invention adopts a two-dimensional strategy of "historical frequency calibration + probability prediction correction" to achieve adaptive dynamic adjustment of the wake-up cycle. For example, when the historical frequency shows a high incidence of recent discharge events, the system automatically shortens the preset time to increase the detection density. At the same time, it predicts possible event peaks in advance through probability prediction to further optimize the wake-up timing. Compared with traditional methods, this "data-driven + intelligent prediction" dual-coupling control logic has formed technical advantages in reducing power consumption (measured average power consumption ≤ 8mW) and improving detection reliability (false alarm rate <0.1%).

[0068] The following combination Figure 3 The specific embodiment shown is used for description.

[0069] Specifically, the GaN UV detector chip is the aforementioned GaN UV partial discharge sensor chip. Furthermore, a temperature sensor is bonded to the surface of the GaN UV detector chip, enabling the temperature sensor to detect the GaN UV detector chip's temperature in real time. Furthermore, the GaN UV detector chip can also utilize the temperature information collected by the temperature sensor to perform preliminary corrections to its own output voltage.

[0070] Furthermore, a dynamic control system is provided, which requires dynamic threshold calculation to obtain the above-mentioned preset voltage threshold. Then, the low-power detection unit compares the above-mentioned output voltage with the preset voltage threshold. The event trigger circuit triggers an event based on the comparison result to determine whether to control the back-end computing circuit to enter or exit the low-power sleep mode. Moreover, if the triggered event is to exit the low-power sleep mode, the module implementing fast wake-up power management wakes up the back-end computing circuit.

[0071] The low-power detection unit may use an ultra-low-power comparator (such as the TI TLV3691 model, with a power consumption of 0.9 μA) to monitor the output voltage of the GaN ultraviolet partial discharge sensor in real time.

[0072] The above event trigger circuit can use a high-speed comparator (such as the MAX9995 model, with a propagation delay of 2ns).

[0073] To achieve the aforementioned fast wake-up power management, a pre-charge power supply can be provided. Specifically, when the back-end computing circuit is in low-power sleep mode, the devices in the back-end computing circuit that require charging and wake-up are pre-charged at a lower voltage or current to shorten the startup time. Furthermore, the reference voltage and clock cache required by the back-end computing circuit can be maintained in low-power sleep mode. In other words, the back-end computing circuit can be divided into three modules: the reference voltage, the clock cache, and the DSP power supply. When the back-end computing circuit enters low-power sleep mode, only the DSP power supply is turned off, further shortening the startup time.

[0074] Furthermore, an adaptive calibration is provided, which includes temperature compensation and clock calibration, that is, a time-temperature dual calibration system is provided, which can perform both clock calibration and temperature compensation.

[0075] Among them, for clock calibration, a clock self-correction module, TCX0 and satellite signal receiving module are set up. The TCX0 is a temperature-compensated crystal oscillator, which can use the SiT1569 model with an accuracy of ±0.1ppm and is used to provide the master clock; the satellite signal receiving module is used as a disciplined clock, which can use the UBLOX M10 model to receive clock signals sent by the satellite. The clock self-correction module uses a Kalman filter fusion algorithm and a clock error model. Its input is the output of the TCXO and the clock signal output by the satellite signal receiving module. The output is the optimal estimated clock error and the dynamically adjusted TCXO output.

[0076] In order to perform temperature compensation, a temperature compensation unit is set up, using a temperature sensor. The temperature sensor can be a PT1000 model with an accuracy of ±0.1°C. The temperature sensor is mounted on the surface of the gallium nitride ultraviolet detector chip. Figure 3 The temperature compensation in the temperature compensation module is used to perform preliminary processing on the received temperature information and send the processing results to the temperature compensation unit. The temperature compensation unit realizes the drift compensation of the baseline voltage output by the GaN ultraviolet partial discharge sensor by compensating the dark current.

[0077] Figure 3 The dynamic voltage regulation in the module is a dynamic voltage regulation module, which is used to dynamically adjust the output voltage of the gallium nitride ultraviolet detector chip according to the adaptive calibration result, and send the adjustment result to the hierarchical calculation circuit so that the hierarchical calculation circuit can obtain the calculation result, such as whether partial discharge occurs.

[0078] As can be seen, the above-mentioned low-power control method compares the output voltage with a preset voltage threshold, triggering different controls based on the comparison result, and flexibly setting the preset time. According to actual tests, it can achieve an average power consumption of ≤8mW for the GaN UV PD sensor system and a battery life of ≥5 years. Furthermore, the above-mentioned clock calibration method has been tested to reduce the cumulative time error from ±876 hours / year to <±10 seconds / year. Furthermore, the above-mentioned dynamic preset voltage threshold and its confirmation method have been tested to achieve a false alarm rate of <0.1% within the temperature range of -40°C to 85°C. Furthermore, the above-mentioned temperature compensation method has been tested to achieve a baseline drift suppression rate of >95% within the temperature range of -40°C to 85°C. Furthermore, the above-mentioned method for shortening the startup time has been tested to reduce the wake-up time of the back-end computing circuit from 50ms to ≤5ms.

[0079] In summary, the gallium nitride ultraviolet partial discharge sensor system control method of the embodiment of the present invention is set to obtain the output voltage of the gallium nitride ultraviolet partial discharge sensor; the output voltage is compared with a preset voltage threshold, wherein the preset voltage threshold is a threshold obtained according to the baseline voltage; when the output voltage is less than or equal to the preset voltage threshold, and the back-end computing circuit has no computing task, the back-end computing circuit is controlled to enter a low-power sleep mode. Thus, by controlling the back-end computing circuit to enter a low-power sleep mode when there is no input signal, the power consumption of the gallium nitride ultraviolet partial discharge sensor system is reduced, and because the low-power sleep mode is exited when the output voltage is greater than the preset voltage threshold, and the gallium nitride ultraviolet partial discharge sensor is not in sleep mode, the detection capability of the gallium nitride ultraviolet partial discharge sensor system can be guaranteed while reducing power consumption, and the back-end computing circuit is controlled to exit the low-power sleep mode by setting an interval preset time, so that the back-end computing circuit performs performance testing on the gallium nitride ultraviolet partial discharge sensor, thereby achieving low power consumption and ensuring the performance of the gallium nitride ultraviolet partial discharge sensor by performing performance testing on the gallium nitride ultraviolet partial discharge sensor at intervals.

[0080] Furthermore, the present invention provides a computer-readable storage medium.

[0081] In an embodiment of the present invention, a computer-readable storage medium stores a computer program, and when the computer program is executed by a processor, the above-mentioned gallium nitride ultraviolet partial discharge sensor system control method is implemented.

[0082] The computer-readable storage medium of an embodiment of the present invention implements the above-mentioned gallium nitride ultraviolet partial discharge sensor system control method, which reduces the power consumption of the gallium nitride ultraviolet partial discharge sensor system by controlling the back-end computing circuit to enter a low-power sleep mode when there is no input signal.

[0083] Furthermore, the present invention provides an electronic device.

[0084] Figure 4 It is a structural block diagram of an electronic device according to an embodiment of the present invention.

[0085] like Figure 4 As shown, electronic device 500 includes: a processor 501 and a memory 503. The processor 501 and the memory 503 are connected, for example, via a bus 502. Optionally, electronic device 500 may further include a transceiver 504. It should be noted that the structure of electronic device 500 in actual applications does not constitute a limitation on the embodiments of the present invention.

[0086] Processor 501 can be a CPU (Central Processing Unit), a general-purpose processor, a DSP, an ASIC (Application Specific Integrated Circuit), an FPGA, or other programmable logic device, a transistor logic device, a hardware component, or any combination thereof. It can implement or execute the various exemplary logic blocks, modules, and circuits described in conjunction with the present disclosure. Processor 501 can also be a combination that implements computing functions, such as a combination of one or more microprocessors, a combination of a DSP and a microprocessor, etc.

[0087] Bus 502 may include a path for transmitting information between the above components. Bus 502 may be a PCI (Peripheral Component Interconnect) bus or an EISA (Extended Industry Standard Architecture) bus. Bus 502 may be divided into an address bus, a data bus, a control bus, etc. For ease of representation, Figure 4 Only one thick line is used in the diagram, but this does not mean that there is only one bus or one type of bus.

[0088] Memory 503 is used to store a computer program corresponding to the gallium nitride ultraviolet partial discharge sensor system control method of the above-mentioned embodiment of the present invention. The computer program is controlled and executed by processor 501. Processor 501 is used to execute the computer program stored in memory 503 to implement the content described in the above-mentioned method embodiment.

[0089] in, Figure 4 The electronic device 500 shown is merely an example and should not limit the functions and scope of use of the embodiments of the present invention.

[0090] The electronic device of an embodiment of the present invention implements the above-mentioned gallium nitride ultraviolet partial discharge sensor system control method, and reduces the power consumption of the gallium nitride ultraviolet partial discharge sensor system by controlling the back-end computing circuit to enter a low-power sleep mode when there is no input signal.

[0091] Furthermore, the present invention proposes a gallium nitride ultraviolet partial discharge sensor system.

[0092] Figure 5 4 is a structural block diagram of a gallium nitride ultraviolet partial discharge sensor system according to an embodiment of the present invention.

[0093] like Figure 5 As shown, the GaN ultraviolet partial discharge sensor system 100 includes the above-mentioned electronic device 500 .

[0094] The gallium nitride ultraviolet partial discharge sensor system of an embodiment of the present invention adopts the electronic device of the above embodiment, and reduces the power consumption of the gallium nitride ultraviolet partial discharge sensor system by controlling the back-end computing circuit to enter a low-power sleep mode when there is no input signal.

[0095] It should be noted that the logic and / or steps represented in the flowcharts or otherwise described herein can be considered as a sequenced list of executable instructions for implementing the logical functions, and can be embodied in any computer-readable medium for use by, or in conjunction with, an instruction execution system, apparatus, or device (such as a computer-based system, a system including a processor, or other system that can fetch and execute instructions from an instruction execution system, apparatus, or device). For purposes of this specification, a "computer-readable medium" can be any device that can contain, store, communicate, propagate, or transport a program for use by, or in conjunction with, an instruction execution system, apparatus, or device. More specific examples (non-exhaustive list) of computer-readable media include the following: an electrical connection with one or more wires (electronic device), a portable computer disk cartridge (magnetic device), random access memory (RAM), read-only memory (ROM), erasable and programmable read-only memory (EPROM or flash memory), fiber optic devices, and portable compact disc read-only memory (CDROM). Furthermore, the computer-readable medium may even be paper or other suitable medium on which the program is printed, since the program may be obtained electronically, for example, by optically scanning the paper or other medium and then editing, interpreting or processing it in another suitable manner if necessary, and then storing it in a computer memory.

[0096] It should be understood that various components of the present invention may be implemented using hardware, software, firmware, or a combination thereof. In the aforementioned embodiments, multiple steps or methods may be implemented using software or firmware stored in a memory and executed by a suitable instruction execution system. If implemented using hardware, as in the other embodiments, any one or a combination of the following technologies known in the art may be used: a discrete logic circuit having logic gates for implementing logic functions on data signals, an application-specific integrated circuit having suitable combinational logic gates, a programmable gate array (PGA), a field-programmable gate array (FPGA), etc.

[0097] Throughout this specification, reference to terms such as "one embodiment," "some embodiments," "examples," "specific examples," or "some examples" means that a specific feature, structure, material, or characteristic described in conjunction with that embodiment or example is included in at least one embodiment or example of the present invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.

[0098] In the description of this specification, the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and should not be understood as a limitation on the present invention.

[0099] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of the technical features being referred to. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "plurality" means at least two, such as two, three, etc., unless otherwise specifically defined.

[0100] In the description of this specification, unless otherwise specified, the terms "installed," "connected," "connect," "fixed," etc. should be understood in a broad sense. For example, they can refer to fixed connection, detachable connection, or integration; mechanical connection or electrical connection; direct connection or indirect connection through an intermediate medium; internal communication between two elements or interaction between two elements, unless otherwise specified. For those skilled in the art, the specific meanings of the above terms in this invention can be understood according to specific circumstances.

[0101] In the present invention, unless otherwise expressly specified or limited, when a first feature is "above" or "below" a second feature, it may mean that the first and second features are in direct contact, or that the first and second features are in indirect contact through an intermediary. Furthermore, when a first feature is "above," "above," or "above" a second feature, it may mean that the first feature is directly above or diagonally above the second feature, or simply means that the first feature is at a higher level than the second feature. When a first feature is "below," "below," or "below" a second feature, it may mean that the first feature is directly below or diagonally below the second feature, or simply means that the first feature is at a lower level than the second feature.

[0102] Although the embodiments of the present invention have been shown and described above, it will be understood that the above embodiments are illustrative and are not to be construed as limitations on the present invention. A person skilled in the art may change, modify, replace and modify the above embodiments within the scope of the present invention.

Claims

1. A gallium nitride ultraviolet partial discharge sensor system control method, characterized in that: The gallium nitride ultraviolet partial discharge sensor system includes a gallium nitride ultraviolet partial discharge sensor and a back-end computing circuit, and the method includes: Obtaining an output voltage of the gallium nitride ultraviolet partial discharge sensor; Comparing the output voltage with a preset voltage threshold, wherein the preset voltage threshold is a threshold obtained according to a baseline voltage, and the baseline voltage is the voltage output by the gallium nitride ultraviolet partial discharge sensor when there is no input signal; When the output voltage is less than or equal to the preset voltage threshold and the back-end computing circuit has no computing task, controlling the back-end computing circuit to enter a low-power sleep mode; When the back-end computing circuit is in the low-power sleep mode, the method further includes: At preset time intervals, the back-end computing circuit is controlled to exit the low-power sleep mode, so that the back-end computing circuit performs performance detection on the gallium nitride ultraviolet partial discharge sensor.

2. The gallium nitride ultraviolet partial discharge sensor system control method according to claim 1, characterized in that: The method further comprises: When the output voltage is greater than the preset voltage threshold and the back-end computing circuit is in the low-power sleep mode, the back-end computing circuit is controlled to exit the low-power sleep mode.

3. The gallium nitride ultraviolet partial discharge sensor system control method according to claim 1, characterized in that: The performance of the gallium nitride ultraviolet partial discharge sensor is tested, including performing time drift calculation and temperature drift calculation on the gallium nitride ultraviolet partial discharge sensor.

4. The gallium nitride ultraviolet partial discharge sensor system control method according to claim 1, characterized in that: The preset voltage threshold is obtained according to the following formula: Vth=Vb+k×σnoise, Among them, Vth is the preset voltage threshold, Vb is the baseline voltage, k is a preset coefficient, σnoise is the noise voltage, and the noise voltage is the voltage output by the gallium nitride ultraviolet partial discharge sensor in response to the ambient noise of the environment in which the gallium nitride ultraviolet partial discharge sensor is located.

5. The gallium nitride ultraviolet partial discharge sensor system control method according to claim 1, characterized in that: The method for determining the preset time includes: Obtaining a historical frequency of occurrence of partial discharge events within a monitoring area of ​​the gallium nitride ultraviolet partial discharge sensor; The preset time is determined according to the historical occurrence frequency.

6. The gallium nitride ultraviolet partial discharge sensor system control method according to claim 1, characterized in that: The method for determining the preset time includes: Predicting the probability of occurrence of a partial discharge event within a monitoring area of ​​the gallium nitride ultraviolet partial discharge sensor; The preset time is determined according to the occurrence probability.

7. A computer-readable storage medium having a computer program stored thereon, characterized in that: When the computer program is executed by a processor, the gallium nitride ultraviolet partial discharge sensor system control method according to any one of claims 1 to 6 is implemented.

8. An electronic device, characterized in that: The method comprises a memory, a processor and a computer program stored in the memory and running on the processor. When the computer program is executed by the processor, the method for controlling a gallium nitride ultraviolet partial discharge sensor system according to any one of claims 1 to 6 is implemented.

9. A gallium nitride ultraviolet partial discharge sensor system, characterized in that: Comprising the electronic device according to claim 8.

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