Method and device for generating anti-counterfeiting pattern with any image distance and readable storage medium

Through the anti-counterfeiting pattern generation method of single-layer structure, the process problems of the double-layer microlens array imaging technology are solved, and the anti-counterfeiting pattern generation of arbitrary image distance is realized, which reduces production costs and increases yield.

CN120375702AActive Publication Date: 2025-07-25WUHAN MINGYU OPTOELECTRONICS TECHNOLOGY CO LTD
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Patent Information

Application Number
CN202410448463.8
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-04-15
Publication Date
2025-07-25
Estimated Expiration
2044-04-15

AI Technical Summary

Technical Problem

The existing microlens array imaging technology requires a double-layer structure, which is difficult to implement the process and requires high-precision alignment, resulting in low yield, difficult to mass production and high cost.

Method used

The anti-counterfeiting pattern generation method with a single-layer structure is adopted to realize the anti-counterfeiting pattern of any image distance through design pattern data processing, basic imaging microstructure calculation and differentiated imaging microstructure array generation, and image is performed by irradiating a point light source on the differentiated imaging microstructure array.

Benefits of technology

It achieves the effect of floating in the air and sinking at the bottom of the film at any distance, which is very easy to industrialize and mass production, reducing production costs.

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Abstract

The invention provides a method for generating an anti-counterfeiting pattern with any image distance. The method comprises the following steps: S1, designing pattern data processing; s2, calculating a basic imaging microstructure; s3, acquiring an axis coordinate according to an array rule; s4, calculating to obtain a special-shaped imaging microstructure; s5, a special-shaped imaging microstructure array is generated circularly according to the arrangement rule, and when the point light source irradiates the special-shaped imaging microstructure array, an imaged anti-fake pattern is achieved; the anti-counterfeiting pattern film with any image distance manufactured by the method can realize the effect of floating in the air and the effect of sinking at the bottom of the film at any distance, and is not inferior to a double-layer micro-lens imaging technology, and because the structure is a single layer, the technology is not different from the traditional holographic anti-counterfeiting film preparation, the industrialization is very easy to realize, and the production cost is reduced. The mass production is very easy.
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Description

Technical Field

[0001] The present invention relates to the field of visual anti-counterfeiting technology, and in particular to a method for generating anti-counterfeiting patterns with arbitrary image distances. Background Art

[0002] The microlens array imaging technology utilizes the magnification function of a three-dimensional microlens array for a micrographic array to produce a dynamic magnification effect with horizontal and vertical parallax. This technology is widely used as an anti-counterfeiting technology. The existing microlens array imaging technology samples a three-dimensional refractive lens array made of PBV (polystyrene) molding material on the upper surface, with a thickness of more than 10 μm, a PET (polyethylene terephthalate) substrate with a thickness of about 15 μm in the middle, and a functional coating with an image structure on the lower surface.

[0003] The microlens array imaging technology is a public anti-counterfeiting technology that transcends traditional optically variable images. This technology separately manufactures a microlens array and a matching micrographic array on both sides of a transparent film, and forms images through the Moiré magnification effect of the microlens array on the micrographic array, creating various strong effects such as dynamic, stereoscopic, and transformational effects, including floating, sinking, parallel movement (the dynamic effect is consistent with the moving direction), orthogonal movement (the dynamic effect is perpendicular to the moving direction), dual channels, etc.

[0004] Generally, the thickness requirement for anti-counterfeiting film products is very thin. Especially for the films used in ticket security and transparent windows, it is required to be less than 50 mm. This requires very high processing precision for the microlens array and the micrographic array. Conventional plate-making and production processes cannot meet the requirements and need to be realized by means of modern precision micro-nano processing, UV imprinting, and other high-performance materials. Moreover, there needs to be a strict structural matching relationship between the two, with very high process requirements and extremely difficult to forge. It has low requirements for the illumination light source and can be easily observed even under relatively dim lighting, making it an ideal public anti-counterfeiting technology.

[0005] However, the existing imaging technology requires a double-layer structure and a certain imaging distance so that the micrographic information can achieve an imaging effect near the focal point of the lens array. Compared with conventional single-layer micro-structured holographic anti-counterfeiting films, this method is very difficult to implement in terms of technology. The high-precision alignment requirements and the relatively thick film thickness not only result in a low yield, making it difficult to mass-produce, but also significantly increase the production cost.

[0006] In view of this, it is necessary to provide a new method for generating anti-counterfeiting patterns with arbitrary image distances to overcome the above defects. Summary of the Invention

[0007] The object of the present invention is to provide a method for generating an anti-counterfeiting pattern with an arbitrary image distance. By using the method of the present invention to produce an anti-counterfeiting pattern film with an arbitrary image distance, the effects of floating in the air at any distance and sinking to the bottom of the film can be achieved, which is no less than that of the double-layer microlens imaging technology. Moreover, since its structure is single-layer and there is no difference in the process from the preparation of traditional holographic anti-counterfeiting films, it is very easy to realize industrialization.

[0008] In order to achieve the above object, the present invention provides a method for generating an anti-counterfeiting pattern with an arbitrary image distance, including the following steps:

[0009] S1. Design pattern data processing;

[0010] S2. Basic imaging microstructure calculation;

[0011] S3. Obtain the axis center coordinates according to the array rule;

[0012] S4. Calculate and obtain the deformed imaging microstructure;

[0013] S5. Generate a deformed imaging microstructure array cyclically according to the arrangement rule. When a point light source irradiates on the deformed imaging microstructure array, an anti-counterfeiting pattern for imaging is realized.

[0014] Preferably, step S1 further includes step S11: making a design pattern to be imaged, performing binarization processing on the design pattern, and discretizing it into a binary matrix according to the required ratio. The binary matrix can be expressed as follows, where m1 and n1 are pixel coordinates:

[0015]

[0016] Among them, the value ranges of m1 and n1 are 1 to 5000. When designing different image distances, the value of the binary matrix is h1, as shown in the following formula:

[0017]

[0018] When the coordinate is the design pattern, the value in the blank area is 0.

[0019] Preferably, step S2 further includes step S21: the basic imaging microstructure can be any axisymmetric microstructure with the function of converging or diffusing light. The axis of the axisymmetric microstructure is perpendicular to the bottom plane, and the top is an axisymmetric curved surface. The basic imaging microstructure is represented by the contour curve equation g(x) of the axial section, where x is the distance from a point on the bottom plane to the axis center. When the basic imaging microstructure is a hemisphere,

[0020]

[0021] Let \(r\) be the radius of the hemisphere. When the distance \(x\) from the axis is \(0\), the height \(g(x)\) is maximum. When the distance from the axis is maximum (\(x = r\)), \(g(x)\) is \(0\). The bottom of the basic imaging microstructure can be any centrally symmetric planar pattern.

[0022] Preferably, step S4 further includes step S41: obtaining the imaging height \(h1\) by corresponding the coordinate values of the basic imaging microstructure to the binary matrix in S11, obtaining the image formed by the entire basic imaging microstructure through the imaging height \(h1\) and the refraction angle deviation equation \(w(x)\), performing rounding processing on the imaging position at the same resolution, then obtaining the corresponding position information through the binary matrix, performing special-shaped processing on the structure at the positions where the matrix value is \(1\), i.e., the areas imaged as black, and not processing the areas where the matrix value is \(0\), thus obtaining the special-shaped imaging microstructure at that position.

[0023] Preferably, for the basic imaging microstructure array, the array pattern is orthogonal, parallelogram, or honeycomb arrangement.

[0024] A computer device includes a memory, a processor, and a computer program stored on the memory and executable on the processor. The processor executes the program to implement the anti-counterfeiting pattern generation method with arbitrary image distances.

[0025] A computer-readable storage medium stores a computer-readable program, which is executed by a processor to implement the anti-counterfeiting pattern generation method with arbitrary image distances.

[0026] Compared with the prior art, the beneficial effect is that the anti-counterfeiting pattern film with arbitrary image distances produced by the method of the present invention can achieve the effects of floating in the air at any distance and sinking to the bottom of the film, not inferior to the double-layer microlens imaging technology. And since its structure is single-layer, there is no difference in the process from the preparation of traditional holographic anti-counterfeiting films, so it is very easy to realize industrialization and mass production.

[0027] Other features and advantages of the present invention will be described in the following description, and some will be obvious from the description, or can be understood through the implementation of the present invention. The features and advantages of the present invention can be realized and obtained through the elements and combinations specifically pointed out in the appended claims. These and other features of the present invention will become more clear and understandable according to the following description and the appended claims, or can be understood through the implementation of the embodiments described in the present invention. Description of the Drawings

[0028] To more clearly illustrate the technical solutions of the embodiments of the present invention, the following will briefly introduce the drawings required for the embodiments. It should be understood that the following drawings only show certain embodiments of the present invention and should not be regarded as limiting the scope. For those of ordinary skill in the art, without creative efforts, other related drawings can also be obtained based on these drawings.

[0029] Figure 1 It is a schematic optical path diagram of the basic imaging microstructure in the embodiments of the present invention.

[0030] Figure 2 It is another schematic optical path diagram of the basic imaging microstructure in the embodiments of the present invention.

[0031] Figure 3 It is a schematic diagram of the designed pattern in the embodiments of the present invention.

[0032] Figure 4 It is an imaging schematic diagram of the basic imaging microstructure.

[0033] Figure 5 It is a schematic diagram after processing the array of deformed imaging microstructures in the embodiments of the present invention.

[0034] Figure 6 For Figure 5 It is a schematic diagram of the first row area selected in

[0035] Figure 7 For Figure 6 It is a front view of the first row area shown in the schematic diagram.

[0036] Figure 8 For Figure 6 It is a top view of the first row area shown in the schematic diagram.

[0037] Figure 9 For Figure 6 It is a perspective view of the first row area shown in the schematic diagram. Detailed implementation manners

[0038] In order to make the objectives, technical solutions and beneficial technical effects of the present invention clearer and more understandable, the following will further elaborate on the present invention in combination with the drawings and specific implementation manners. It should be understood that the specific implementation manners described in this specification are only for explaining the present invention and not for limiting the present invention.

[0039] It should be understood that the orientation or positional relationship indicated by the terms "upper", "lower", "front", "rear", "left", "right", "top", "bottom", "inner", "outer", etc. is based on the orientation or positional relationship shown in the drawings. It is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation on the present invention.

[0040] It should also be noted that, unless otherwise clearly specified and limited, terms such as "installed", "connected", "joined", "fixed", "set" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or integrated; it can be a mechanical connection or an electrical connection; it can be directly connected or indirectly connected through an intermediate medium, and it can be the communication inside two elements or the interaction relationship between two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be determined according to specific circumstances.

[0041] In addition, the terms "first", "second", "third" are only used for descriptive purposes and should not be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, the features defined with "first", "second", "third" may explicitly or implicitly include one or more of such features. In addition, the meanings of "multiple" and "several" refer to two or more, unless otherwise clearly and specifically limited.

[0042] The present invention provides an anti-counterfeiting pattern generation method with an arbitrary image distance, including the following steps:

[0043] S1. Design pattern data processing;

[0044] Specifically, first, a design pattern to be imaged needs to be made with software. A corresponding vector pattern (with a size of 50mm × 50mm, as shown in the attached drawings, the design pattern is the capital letter M) is made using CorelDRAW (or other vector drawing tools such as AI), and the design pattern is binarized and discretized into a binary matrix according to the required resolution. The binary matrix can be expressed as follows, where m1 and n1 are pixel coordinates: Figure 3 where the value range of m1 and n1 is 1 to 5000. When designing different image distances, the value of the binary matrix is h1, as shown in the following formula:

[0045]

[0046] When the coordinate is the design pattern, the value in the blank area is 0.

[0047]

[0048] When the coordinate is the design pattern, the value in the blank area is 0.

[0049] S2. Calculation of the basic imaging microstructure;

[0050] Specifically, the basic imaging microstructure can be any axisymmetric microstructure with the function of converging or diverging light. The axis of this axisymmetric microstructure is perpendicular to the bottom plane, and the top is an axisymmetric curved surface. For example, simple plano-concave and plano-convex lenses. The basic imaging microstructure can be represented by the contour curve equation g(x) of the axial section, where x is the distance of a point on the bottom plane from the axis. For example, when the basic imaging microstructure is a hemisphere,

[0051]

[0052] Here r is the radius of the hemisphere, that is, the height of the basic microstructure is r. When the distance x from the axis is 0, the height g(x) is the largest, and when the distance from the axis is the largest (x = r), g(x) is 0. The bottom of this basic imaging microstructure can be any centrally symmetric planar pattern, such as a circle, an ellipse, an even polygon, or other shapes.

[0053] When the basic imaging microstructure is non-circular, the cross-section passing through the maximum diameter needs to be selected as the curve equation. For example, when the bottom is a square with side length r and the cross-section equation is a hemisphere, the equation is:

[0054]

[0055] The curve equations of other axisymmetric microstructures with the function of converging or diverging light, such as quadratic power function equations. When the bottom is a circle with radius r, the curve equation of the quadratic equation parabola is:

[0056]

[0057] Where h is the set height of the basic microstructure.

[0058] Based on the imaging microstructure with the function of converging or diverging, for different imaging patterns, the selected part on the surface of the basic imaging microstructure is processed. The selection of the processing position satisfies the microstructure imaging equation w(x), where x is the distance from the axis, and w(x) is the position where the light passing through x falls on the imaging pattern. When the area corresponding to the imaging of w(x) is black (when there is a pattern), it is processed, and other areas are not processed. The processing method can be to make the curved surface into a plane or into a noise structure, that is, this special-shaped imaging microstructure is obtained.

[0059] When light passes through the unchanged area and the changed area, there will be imaging differences. For example, when the curved surface of a fixed point is processed into a plane, the light trajectory will change, causing obvious regional brightness differences in the microstructure array with relatively uniform brightness originally. And this designed brightness difference is the image formed by the designed deformed imaging microstructure array. The designed deformed imaging microstructure array can realize imaging patterns with arbitrary heights. When imaging above the deformed imaging microstructure array, the designed pattern suspended on the surface of the deformed imaging microstructure can be seen. At the same time, by changing the topography g(x) of the basic imaging microstructure, such as changing a plano-convex lens into a plano-concave lens, or changing the imaging pattern, virtual images with arbitrary depths can be realized, and the designed pattern sunk at the bottom of the basic imaging microstructure can be observed.

[0060] Furthermore, for the basic imaging microstructure array, the array method can be regular orthogonal, parallelogram, honeycomb and other arrangements, or irregular random arrangements; the deformed imaging microstructure is designed on the axisymmetric basic imaging microstructure.

[0061] When the basic imaging microstructure adopts a plano-convex lens, as Figure 1 shown, with a thickness of h, a bottom circular diameter of d, and a refractive index of n, the geometric radius r is:

[0062]

[0063] From this, the focal length of the plano-convex lens can be obtained:

[0064]

[0065] The basic imaging microstructure of this scheme is at the micron level. Whether it is natural light or a point light source, it can be approximated as parallel light. As shown in optical path 1 in Figure 1 , parallel light rays parallel to the axis of symmetry of the basic imaging microstructure are used. Similarly, when the size of the plano-convex lens is too large, natural light cannot be equivalent to parallel light. Through the reversibility of the optical path, when we need to achieve the effect of suspension in the air and imaging above the basic imaging microstructure layer, as in optical path Figure 1 , setting the imaging height as h1 (imaging distance of the designed pattern), we only need to make the curved surface where the light rays passing through the black area shown in Figure 4 become a plane after passing through the plano-convex lens. As shown in Figure 1 , when the light rays fall on the circle marked area in the imaging area, the circle position of the plano-convex lens is changed to a plane. At this time, the w(x) equation is:

[0066]

[0067] When a designed pattern sunk below the basic imaging microstructure is needed, from Figure 2For the optical path 2 shown in the figure, the extension line of the refracted light passing through the plano-convex lens intersects the plane at a position h1 below the microstructure, and the corresponding imaging deviation equation is:

[0068]

[0069] It can be known from formula (7) that different imaging distances have different deviation equations, and different w(x) can act on the same basic imaging microstructure. For a single basic imaging microstructure, the imaging design can be represented by h(x). For example, for imaging at the same height, when the imaging is damaged, h1(x) = 0 can be taken, and when the imaging is not damaged, h1(x) = h1. Through the way of result superposition, the present invention simultaneously presents images with different designs and different image distances, presenting different patterns and different floating heights, or sinking and floating in the same design, that is, the imaging height h1 changes with x. When h1 continuously changes with x, the imaging of the 3D structure can be realized.

[0070] The axis of a single plano-convex lens and the axis of the imaging area are in one-to-one correspondence. The imaging pattern corresponding to the position can be obtained through the axis deviation position w(x). When the pattern is black, the corresponding curved surface structure is changed. When a complete imaging pattern is required, the same processing is performed on each plano-convex lens in the array.

[0071] For different curve equations, we only need to determine the geometric radius r(x) of this point, and the corresponding refraction position deviation equation can be obtained in the same way according to the above formula. Of course, we can also design the shape of the corresponding basic imaging microstructure and the corresponding refractive index according to the required deviation equation w(x).

[0072] From Figure 1 it can be known that the imaging distance range of a plano-convex lens is a circle with a diameter of d1, and its diameter d1 is:

[0073]

[0074] The angular range of parallel light rays, that is, the maximum angle with the axis:

[0075]

[0076] It can be known from the previous focal length formula that:

[0077]

[0078] Obviously, when the diameter of the plano-convex lens is greater than 2h and the thickness h remains unchanged, we can obtain a larger parallel light angle by reducing the size of d and increasing the refractive index n. A larger parallel light angle means that the imaging has a wider viewing angle. When the parallel light angle of the imaging changes, the imaging position will shift. As can be seen from the previous formula, when the light angle changes from 0 to θ, the imaging position shifts by d1 / 2. Therefore, when the point light source irradiates, the designed pattern will move with the point light source. We can control the severity of the pattern shaking by changing the size of d1. From formula (8), it can be known that when the parameters of the micro plano-convex lens array are fixed, d1 is uniquely determined by the imaging height h1. The pattern we image is a visible pattern to the naked eye. During the imaging process of the entire pattern, it is impossible for all parallel light rays passing through the micro plano-convex lens to have the same angle. When the angle difference between adjacent micro plano-convex lenses is too large, the imaging will become blurred. Especially when irradiated by a point light source, let the angle difference in the adjacent area be θ1, the imaging overlap deviation:

[0079]

[0080] Therefore, when the imaging distance h1 is too large, the designed pattern imaging will be blurred. At the same time, when designing a pattern with a large imaging distance, we can obtain a clearer imaging pattern by reducing the focal length of the plano-convex lens or increasing the refractive index.

[0081] In this embodiment, the basic imaging microstructure adopts a spherical plano-convex lens with a bottom circular plane, a diameter of d = 50 microns, and a height of h = 3 microns. When the height is fixed, the manufacturing material of the final anti-counterfeiting film is a UV glue with a refractive index n = 1.5. From the formula the geometric radius r = 105.67 microns can be obtained. At this time, the contour curve equation of the axial section is Then the focal length of the spherical plano-convex lens Calculated to get f = 105.37 mm, the imaging height of the spherical plano-convex lens is h1 = 1.5 mm. Through the formula Calculated to get the imaging range d1 of the spherical plano-convex lens = 759.76 microns.

[0082] S3. Obtain the axis center coordinates according to the array rule;

[0083] When the area of the designed pattern is 50 mm × 50 mm, we need 1000 × 1000 plano-convex lenses with a diameter of 50 microns arranged orthogonally. Obviously, it is very difficult to quickly realize the design of the deformed imaging micro-structure by calculating one by one. Therefore, the maximum imaging range of the micro-structure can be specifically obtained through the previous equations. The initial position is obtained according to the arrangement rule, such as orthogonal arrangement. After determining the period T, the first position coordinate is (T / 2, T / 2). When there is no overlap between the micro-structure and other micro-structures, the axis coordinates are obtained; otherwise, appropriate coordinates are output again. For orthogonal arrangement, when T is greater than or equal to the structure diameter d, there will be no overlap. However, for random arrangements without rules, a program to prevent overlap needs to be adopted in the arrangement rule, otherwise the program will run slowly. For example, an array arranged in a period can be used, and a certain range of random perturbations can be added to achieve a non-overlapping random arrangement rule.

[0084] S4. Calculate and obtain the deformed imaging micro-structure;

[0085] Specifically, when the values of the coordinates (m, n) of the basic imaging micro-structure are (T / 2, T / 2), the imaging height h1 is obtained corresponding to the binary matrix in S1. At this time, the center of the basic imaging micro-structure is (T / 2, T / 2). Through the imaging height h1 and the refraction angle deviation equation w(x), the image formed by the entire basic imaging micro-structure can be obtained. The imaging position is rounded at the same resolution, and then the corresponding position information is obtained through the binary matrix. For the position where the matrix value is 1, that is, the area where the image is black (when there is a pattern), the structure is deformed, such as changing the curved surface into a flat surface or a noise surface. For the area where the matrix value is 0, no processing is performed, and thus the deformed imaging micro-structure at this position is obtained.

[0086] S5. According to the arrangement rule, a deformed imaging micro-structure array is generated cyclically. When a point light source irradiates the deformed imaging micro-structure array, an anti-counterfeiting pattern can be imaged.

[0087] Specifically, when the arrangement rule is orthogonal, coordinate points are taken according to the period, and the axis positions are output sequentially from left to right and from top to bottom. By repeating step S4 through the mapping equation, a complete deformed imaging micro-structure array that can form a complete image can be finally obtained.

[0088] Furthermore, the arrangement method adopts an orthogonal arrangement with a period of T = 50 microns, and the axis coordinates are output sequentially from left to right and from top to bottom. From this, it can be known that the first axis coordinate is (25, 25) (unit: micron). The axis position area and the floating pattern area (50 × 50, unit: mm) are in one-to-one correspondence, that is, the imaging area corresponding to the first imaging micro-structure is a circle with a coordinate of (25, 25) and a diameter of 759.76 microns. Obviously, the imaging range exceeds the original 50 × 50 area. Here, for the part that exceeds the original area, it is defaulted to a white area without letters, that is, the value is 1.

[0089] As Figure 1 shown, when imaging with a spherical plano-convex lens, the axial deviation equation is given by the formula From the formula, when f = 105.67 and h1 = 1.5 mm are fixed values, this equation is a proportional equation w(x) = kx, where the proportionality coefficient k = 15.2.

[0090] Therefore, it can be simplified to perform an exclusive OR operation between the pattern in the imaging region reduced by 15.2 times and the spherical plano-convex lens. The plano-convex lens is modeled as a grayscale image with a resolution of 250 nm. As Figure 4 shown, at the highest position in the center of Figure 4 , the grayscale is 255, and at the lowest and blank positions, the grayscale is 0. When the processing method is such that the curved surface becomes flat when the corresponding region is black, it can be simplified to multiply two scaled imaging region matrices by the microlens matrix (the size of the scaled matrix needs to be processed to be the same as the microlens modeling matrix, and here nearest-neighbor interpolation is used). By processing sequentially according to the array coordinates, the complete deformed imaging microstructure array can be obtained. After processing, as Figure 5 shown, in the region where the image is formed on the black letters, the plano-convex lens becomes 0, and in the non-black regions, it remains unchanged.

[0091] Figure 6 For Figure 5 the first row selected in Figure 7 , Figure 8 , Figure 9 the front view, top view, and three-dimensional view presented in this first row region respectively can visually show the basic imaging microstructure array, that is, the finally designed deformed imaging microstructure array.

[0092] In this way, a grayscale image of the deformed imaging microstructure array can be obtained. Here, the method of fabricating the deformed imaging microstructure array is lithography using a grayscale laser direct writing device. The basic imaging microstructure can be directly lithographed on the photoresist with a 250 nm precision drawing. After lithography of the photoresist is completed, the corresponding deformed imaging microstructure array can be obtained through development.

[0093] The deformed microstructure array can be mass-replicated by nanoimprinting. The UV structure after nanoimprinting can be used for various anti-counterfeiting films. When the designed pattern paper is under natural light, the overall effect of the transferred UV structure is that an M pattern of 50X50 mm floats in the air 1.5 mm away from the basic imaging microstructure layer. When illuminated by a point light source, the M pattern sways with the point light source. Similarly, this method can be used to achieve anti-counterfeiting patterns at any image distance.

[0094] The present invention also provides a computer device, including a memory, a processor, and a computer program stored on the memory and executable on the processor. The processor executes the program to implement the anti-counterfeiting pattern generation method with an arbitrary image distance.

[0095] The present invention also provides a computer-readable storage medium storing a computer-readable program, which is executed by a processor to implement the anti-counterfeiting pattern generation method with an arbitrary image distance.

[0096] Those skilled in the art should understand that the embodiments of the present application can be provided as a method, a system, or a computer program product. Therefore, the present application can take the form of a complete hardware embodiment, a complete software embodiment, or an embodiment combining software and hardware aspects. Moreover, the present application can take the form of a computer program product implemented on one or more computer-readable storage media (but not limited to phase change memory (PRAM), static random access memory (SRAM), dynamic random access memory (DRAM), other types of random access memory (RAM), read-only memory (ROM), electrically erasable programmable read-only memory (EEPROM), flash memory, or other optical and magnetic storage media, etc.) containing computer-usable program code.

[0097] The computer-readable storage medium provided by the above embodiments of the present application and the method provided by the embodiments of the present application are based on the same inventive concept and have the same beneficial effects as the methods adopted, run, or implemented by the application programs stored therein.

[0098] The present application is described with reference to the flowcharts and / or block diagrams of methods, devices (systems), and computer program products according to the embodiments of the present application. It should be understood that each flow and / or block in the flowcharts and / or block diagrams, as well as the combination of flows and / or blocks in the flowcharts and / or block diagrams, can be implemented by computer program instructions. These computer program instructions can be provided to the processor of a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing devices to generate a machine, so that the instructions executed by the processor of the computer or other programmable data processing devices generate a device for implementing the functions specified in Figure 1 one flow or multiple flows and / or blocks Figure 1 one block or multiple blocks.

[0099] These computer program instructions can also be stored in a computer-readable memory capable of guiding a computer or other programmable data processing devices to work in a specific manner, so that the instructions stored in the computer-readable memory generate a manufactured product including an instruction device, and the instruction device implements the functions specified in Figure 1 one flow or multiple flows and / or blocks Figure 1 one block or multiple blocks.

[0100] These computer program instructions can also be loaded onto a computer or other programmable data processing apparatus, so that a series of operation steps are performed on the computer or other programmable apparatus to produce a computer-implemented process, thereby providing instructions for implementing the steps specified in one process or multiple processes and / or blocks Figure 1 one process or multiple processes and / or blocks Figure 1 steps for the functions specified in one block or multiple blocks.

[0101] The present invention is not limited solely to what is described in the specification and embodiments. Therefore, additional advantages and modifications can be easily achieved by those skilled in the art. Thus, without departing from the spirit and scope of the general concept defined by the claims and their equivalents, the present invention is not limited to the specific details, representative apparatuses, and illustrative examples shown and described herein.

Claims

1. A method for generating an anti-counterfeiting pattern with an arbitrary image distance, characterized in that, It includes the following steps: S1. Design pattern data processing; S2. Basic imaging microstructure calculation; S3. Obtain the axis coordinates according to the array rules; S4. Calculate and obtain the deformed imaging microstructure; S5. Generate a deformed imaging microstructure array cyclically according to the arrangement rules. When a point light source irradiates the deformed imaging microstructure array, an anti-counterfeiting pattern for imaging is realized.

2. The anti-counterfeiting pattern generation method with an arbitrary image distance as described in claim 1, wherein, Step S1 further includes step S11: Make a design pattern to be imaged, perform binarization processing on the design pattern, and discretize it into a binary matrix according to the required resolution. The binary matrix can be expressed as follows, where m1 and n1 are pixel coordinates: Among them, the value ranges of m1 and n1 are from 1 to 5000. When designing different image distances, the value of the binary matrix is h1, as shown in the following formula: When the coordinate is the design pattern, the value in the blank area is 0.

3. The anti-counterfeiting pattern generation method with an arbitrary image distance as described in claim 1, characterized in that Step S2 further includes step S21: The basic imaging microstructure can be any axisymmetric microstructure with the function of converging or diffusing light. The axis of the axisymmetric microstructure is perpendicular to the bottom plane, and the top is an axisymmetric curved surface. The contour curve equation g(x) of the axial section represents the basic imaging microstructure, where x is the distance of a point on the bottom plane from the axis center. When the basic imaging microstructure is a hemisphere, r is the radius of the hemisphere. When the distance x from the axis center is 0, the height g(x) is the largest. When the distance from the axis center is the largest (x = r), g(x) is 0. The bottom of the basic imaging microstructure can be any centrosymmetric plane pattern.

4. The anti-counterfeiting pattern generation method with an arbitrary image distance according to claim 2, wherein, Step S4 also includes step S41: Corresponding the coordinate value of the basic imaging microstructure to the binary matrix in S11 to obtain the imaging height h1. Obtain the image formed by the entire basic imaging microstructure through the imaging height h1 and the refraction angle deviation equation w(x). Perform rounding processing on the imaging position at the same resolution, and then obtain the corresponding position information through the binary matrix. For the position where the matrix value is 1, that is, the area imaged as black, perform deformation processing on the structure, and do not process the area where the matrix value is 0, that is, obtain the deformed imaging microstructure at this position.

5. The anti-counterfeiting pattern generation method with an arbitrary image distance according to claim 1, characterized in that, For the basic imaging microstructure array, the array method is orthogonal, parallelogram, or honeycomb arrangement.

6. A computer device, comprising a memory, a processor, and a computer program stored on the memory and executable on the processor, characterized in that, The processor executes the program to implement the anti-counterfeiting pattern generation method with an arbitrary image distance as described in any one of claims 1-5.

7. A computer-readable storage medium storing a computer-readable program, characterized in that, The program is executed by the processor to implement the anti-counterfeiting pattern generation method with an arbitrary image distance as described in any one of claims 1-5.

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