Screening test method and system of built-in RRAM microcontroller
Through the screening and testing system of built-in RRAM microcontroller, combined with programming functional testing, byte read testing and functional testing, the problem of low testing efficiency of built-in RRAM microcontroller is solved, and rapid screening and functional reliability verification are achieved.
Patent Information
- Application Number
- CN202510365566.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-03-26
- Publication Date
- 2025-07-25
AI Technical Summary
The test efficiency of built-in RRAM microcontrollers in the prior art is inefficient, especially in the rapid evaluation of the impact of process fluctuations on functional reliability.
A screening and testing system with built-in RRAM microcontroller, including a microcontroller with built-in RRAM, peripheral circuits, EEPROM memory and program memory programmer, can quickly filter out qualified products through a combination of programming function test, byte read test, bit read test and functional test.
It realizes rapid screening of built-in RRAM microcontrollers, improves testing efficiency, ensures the reliability of RRAM program memory and the verification of basic functions of the microcontroller.
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Figure CN120375902A_ABST
Abstract
Description
Technical Field
[0001] The present invention belongs to the technical field of chip screening and testing, and particularly relates to a screening and testing method and system for a microcontroller with built-in RRAM. Background Art
[0002] Resistive random access memory (RRAM) is a new type of non-volatile memory, which has the characteristics of fast operation speed, low power consumption and high integration. Based on the resistive change structure, the resistive random access memory can change the resistance value by applying different voltages. Its resistance states are divided into two types: high resistance state (HRS, High Resistance State) and low resistance state (LRS, Low Resistance State), corresponding to digital logic 1 and logic 0 respectively. There are certain ranges of process fluctuations in both the high resistance state and the low resistance state, and the resistive state transition of the resistive change structure is unstable.
[0003] For the test of a microcontroller circuit with built-in RRAM, on the one hand, the basic functions of the microcontroller need to be tested and verified, and on the other hand, the reliability of the RRAM program memory needs to be verified. At present, for the test of a microcontroller circuit with built-in RRAM, although there are certain test methods and technologies, there is still a situation of low test efficiency in terms of quickly evaluating the impact of process fluctuations on the functional reliability of a microcontroller with built-in RRAM and achieving high-efficiency testing (correctness of programming function, reliability of RRAM program memory and basic functions of the microcontroller).
[0004] Therefore, a screening and testing method for a microcontroller with built-in RRAM is needed to solve the above problems. Summary of the Invention
[0005] To solve the above problems in the prior art, that is, the low test efficiency of a microcontroller circuit with built-in RRAM, in the first aspect of the present invention, a screening and testing system for a microcontroller with built-in RRAM is proposed. The system includes: a microcontroller test system with built-in RRAM and a program memory programmer.
[0006] The microcontroller test system with built-in RRAM includes a microcontroller with built-in RRAM, a peripheral circuit, and an EEPROM memory.
[0007] The program memory programmer includes a programmer for on-chip RRAM and a programmer for off-chip EEPROM.
[0008] The microcontroller with built-in RRAM is respectively connected to the peripheral circuit, the EEPROM memory, and the programmer for on-chip RRAM, and the EEPROM memory is connected to the programmer for off-chip EEPROM.
[0009] In some preferred embodiments, the built-in RRAM microcontroller includes on-chip RRAM, the on-chip RRAM includes a plurality of RRAM cells, and the RRAM cell includes a field effect transistor T0 and a resistive switching device R0;
[0010] The field effect transistor T0 includes an N-type field effect transistor and a P-type field effect transistor;
[0011] The drain of the field effect transistor T0 and the SL connection terminal are the first pole, the forward operation terminal of the resistive switching device and the BL connection terminal are the second pole, the reverse operation terminal of the resistive switch and the source of the field effect transistor T0 are the third pole, and the word line WL and the gate of the field effect transistor T0 are the fourth pole;
[0012] Apply a write pulse to the second pole and a write gate voltage pulse to the fourth pole, and the on-chip RRAM performs writing;
[0013] Apply a read pulse to the second pole and a write gate voltage pulse to the fourth pole, and the on-chip RRAM performs reading.
[0014] The second invention of the present invention proposes a screening test method for a built-in RRAM microcontroller. Based on the screening test system for a built-in RRAM microcontroller, the method includes the following steps:
[0015] Step 1, execute a preset test process based on the screening test system for a built-in RRAM microcontroller, and sequentially determine whether the process passes; the test process includes a programming function test, a byte read test, a bit read test, and a function test;
[0016] Step 2, if all preset test processes pass, determine that the currently tested microcontroller is a qualified product and pass the screening process; if any preset test process fails, immediately determine that the currently tested microcontroller is an unqualified product and does not pass the screening process.
[0017] In some preferred embodiments, the programming function test is configured as: sending a test instruction to the programming module of the built-in RRAM microcontroller through a programmer, and sequentially performing corresponding function tests at multi-frequency baud rates. If the programming module can correctly respond and execute its functions under all set baud rate conditions, it is determined that the programming function test passes; otherwise, it is determined that the programming function test fails; the corresponding function tests include handshake, reset, and full address read and write operations.
[0018] In some preferred embodiments, the byte read test is configured as follows: writing a specific pattern group into the on-chip RRAM through a programmer; writing an instruction reading program into the EEPROM memory; performing N read operations on all the patterns of the on-chip RRAM by executing the instruction reading program in the EEPROM memory, and comparing the data read each time with the theoretical result; if all the patterns are consistent with the theoretical result in the N read operations, it is determined that the byte read test passes; otherwise, it is determined that the byte read test fails.
[0019] In some preferred embodiments, the bit read test is configured as follows: writing a physical pattern group into the on-chip RRAM through a programmer; running the programmer again to perform a read operation on the written pattern in the on-chip RRAM, calculating the bit success rate according to the ratio of the correctly read bits to the total number of bits, if the bit success rates of all the patterns exceed X%, it is determined that the bit read test passes, and a function test is performed; otherwise, it is determined that the bit read test fails.
[0020] In some preferred embodiments, the function test is configured as follows: writing a function vector group into the on-chip RRAM through a programmer; cooperating with the peripheral circuit to execute the written function vector group N times, and comparing the execution result each time with the theoretical result; if the execution results of all the vectors in the N executions are consistent with the theoretical result, it is determined that the function test passes; otherwise, it is determined that the function test fails.
[0021] In some preferred embodiments, the value of N is set according to the process characteristics and design specifications of the microcontroller of the on-chip RRAM.
[0022] In some preferred embodiments, the success rate is set according to the process characteristics and error correction ability of the on-chip RRAM.
[0023] In some preferred embodiments, the function test includes basic instructions, data storage, peripheral functions, low power mode, complex mathematical operations, multi-frequency baud rate communication.
[0024] Advantages of the present invention:
[0025] According to the read / write function of the on-chip RRAM and the basic function of the microcontroller, a preset test process is formulated: programming function test, byte read test, bit read test and function test, and these test processes are executed. After each process is completed, there will be a result of whether the process passes. If all the preset test processes pass, it is determined that the currently tested microcontroller is a qualified product and passes the screening process; if any one of the preset test processes fails, it is immediately determined that the currently tested microcontroller is an unqualified product and fails the screening process, so as to realize the rapid screening of the microcontroller chip with built-in RRAM. Brief Description of the Drawings
[0026] Other features, objects, and advantages of the present application will become more apparent by reading the following detailed description of non - restrictive embodiments with reference to the accompanying drawings:
[0027] Figure 1 is a flowchart of the test steps of a screening and testing method for an in - built RRAM microcontroller according to the present invention;
[0028] Figure 2 is a schematic diagram of the in - chip RRAM cell structure according to the present invention;
[0029] Figure 3 is a system block diagram of a screening and testing system for an in - built RRAM microcontroller according to the present invention;
[0030] Figure 4 is a flowchart of the overall steps of a screening and testing method for an in - built RRAM microcontroller according to the present invention. Detailed Embodiments
[0031] The present application will be further described in detail below with reference to the drawings and embodiments. It can be understood that the specific embodiments described herein are only used to explain the related invention and not to limit the invention. Additionally, it should be noted that for the sake of description, only parts related to the relevant invention are shown in the drawings.
[0032] It should be noted that, without conflict, the embodiments in the present application and the features in the embodiments can be combined with each other. The present application will be described in detail below with reference to the drawings and embodiments.
[0033] For a clearer description of a method for implementing a distributed seat free layout according to the present invention, the following combines Figures 1 to 4 to elaborate on each step in the embodiments of the present invention.
[0034] A first embodiment of the present invention provides a screening and testing system for an in - built RRAM microcontroller. Referring to Figure 3 , the system includes: a microcontroller test system with in - built RRAM and a program memory programmer;
[0035] The microcontroller test system with in - built RRAM includes a microcontroller with in - built RRAM, a peripheral circuit, and an EEPROM memory;
[0036] The program memory programmer includes a programmer for in - chip RRAM and a programmer for off - chip EEPROM;
[0037] The microcontroller with built-in RRAM is respectively connected to the peripheral circuit, the EEPROM memory, and the programmer of the on-chip RRAM, and the EEPROM memory is connected to the programmer of the off-chip EEPROM;
[0038] In this embodiment, refer to Figure 2 , the microcontroller with built-in RRAM includes on-chip RRAM, and the on-chip RRAM includes multiple RRAM cells. The RRAM cell includes a field-effect transistor T0 and a resistive random access memory device R0. (The microcontroller with built-in RRAM refers to a part of the packaged chip, including the on-chip RRAM, that is, the RRAM array and the microcontroller, and the on-chip RRAM includes multiple RRAM cells);
[0039] The field-effect transistor T0 includes an N-type field-effect transistor and a P-type field-effect transistor;
[0040] The drain of the field-effect transistor T0 and the SL connection terminal are the first pole, the forward operation terminal of the resistive random access memory device and the BL connection terminal are the second pole, the reverse operation terminal of the resistive random access memory and the source of the field-effect transistor T0 are the third pole, and the word line WL and the gate of the field-effect transistor T0 are the fourth pole;
[0041] Apply a write pulse to the second pole and a write gate voltage pulse to the fourth pole, and the on-chip RRAM performs writing. The write pulse is a pulse with an amplitude of V W and a pulse width of P W , and the write gate voltage pulse is a pulse with an amplitude of V gW and a pulse width of P gW . The pulse changes the resistance value of the RRAM to reach a high resistance value or a low resistance value state;
[0042] Apply a read pulse to the second pole and a write gate voltage pulse to the fourth pole, and the on-chip RRAM performs reading. The read pulse is a pulse with an amplitude of V R and a pulse width of P R , and the write gate voltage pulse is a pulse with an amplitude of V gR and a pulse width of P gR . The pulse changes to read the resistance value of the RRAM and obtains the digital logic value stored in the RRAM;
[0043] It should be noted that the screening and testing system for an embedded RRAM microcontroller provided in the above embodiments is only illustrated by dividing the above functional modules. In practical applications, the above functions can be allocated to different functional modules according to needs, that is, the modules or steps in the embodiments of the present invention can be further decomposed or combined. For example, the modules in the above embodiments can be combined into one module, or further split into multiple sub-modules to complete all or part of the functions described above. The names of the modules and steps involved in the embodiments of the present invention are only for distinguishing each module or step, and are not regarded as improper limitations of the present invention.
[0044] The second invention of the present invention, see Figure 4 , and proposes a screening and testing method for an embedded RRAM microcontroller. Based on the above-mentioned screening and testing system for an embedded RRAM microcontroller, it includes the following steps:
[0045] Step 1, execute a preset test process based on the above-mentioned screening and testing system for an embedded RRAM microcontroller, and sequentially determine whether the process passes; the test process includes a programming function test, a byte read test, a bit read test, and a function test;
[0046] Step 2, if all the preset test processes pass, then determine that the currently tested microcontroller is a qualified product and passes the screening process; if any one of the preset test processes fails, then immediately determine that the currently tested microcontroller is an unqualified product and does not pass the screening process;
[0047] In this embodiment, see Figure 1 , the programming function test is configured as follows: send a test instruction to the programming module of the microcontroller with embedded RRAM (which is a part of the circuit inside the microcontroller chip, and its function is to identify information such as start, end, and specific code patterns sent by the external programming software. In fact, it uses the external RRAM programming software to verify the function of a part of the circuit, that is, the programming module of the microcontroller chip) through a programmer (that is, the supporting programmer software, hereinafter referred to as the programmer), and execute the corresponding function test one by one at different baud rates. If the programming module can correctly respond and execute its functions under all set baud rate conditions, then it is determined that the programming function test passes, and the byte read test is performed; otherwise, it is determined that the programming function test fails; the corresponding function tests include handshake, reset, and full address read and write operations;
[0048] The byte read test is configured as follows: write a specific pattern group to the on-chip RRAM through a programmer. Specifically, write specific patterns to all addresses corresponding to the on-chip RRAM, including but not limited to the byte patterns of "00", "FF", "55", and "AA"; configure the microcontroller to work in the on-chip mode and write an instruction reading program in the EEPROM memory; by executing the instruction reading program in the EEPROM memory, perform N read operations on all patterns of the on-chip RRAM, and compare the data read each time with the theoretical result (i.e., the specific pattern group written to the on-chip RRAM); if all patterns are consistent with the theoretical result in the N read operations, it is determined that the byte read test passes and the bit read test is performed; otherwise, it is determined that the byte read test fails; the value of N is set according to the process characteristics and design specifications of the microcontroller of the on-chip RRAM, including N = 100. Here, the theoretical result means that the data read is exactly the same as the specific pattern group written to the RRAM, that is, in the byte read stage, the pattern written should be read out as it is;
[0049] The bit read test is configured as follows: write a physical pattern group to the on-chip RRAM through a programmer. Specifically, write physical patterns to all addresses corresponding to the on-chip RRAM, including but not limited to the byte patterns of "00", "FF", "55", and "AA"; run the programmer again to perform a read operation on the patterns written in the on-chip RRAM, calculate the bit success rate according to the ratio of the correctly read bits to the total number of bits. If the bit success rates of all patterns exceed X%, it is determined that the bit read test passes and the function test is performed; otherwise, it is determined that the bit read test fails; the success rate is set according to the process characteristics and error correction ability of the on-chip RRAM, including X% being set to 99.87%;
[0050] The functional test is configured as follows: write a functional vector group into the on-chip RRAM through a programmer, including basic instructions, data storage, peripheral functions, low-power mode, complex mathematical operations, and multi-frequency baud rate communication, and generate a program file recognizable by the microcontroller through programming of the programmer; and cooperate with peripheral circuits (such as LEDs and serial ports), execute the written functional vector group N times, and compare the execution result of each time with the theoretical result; if the execution results of all vectors for N times are consistent with the theoretical results, it is determined that the functional test passes; otherwise, it is determined that the functional test fails; the theoretical results here are pre-calculated or simulated according to the functional vector group and the design specifications of the RRAM, and are observed through peripheral circuits during actual use, such as the on / off of the LED and the data transmitted through the serial port. The specific process is as follows: run the programmer of the on-chip RRAM of the microcontroller, compile the program file into the on-chip RRAM, and control the microcontroller to execute the on-chip mode, and observe the program test result through the peripheral circuit. If the test result is consistent with the theoretical situation, directly record the test situation; if the test result does not match the theoretical situation, it is determined that the current test chip fails the screening process.
[0051] The specific process can also be as follows: run the EEPROM programmer outside the microcontroller, compile the program file into the EEPROM, and control the microcontroller to execute the off-chip mode, and observe the program test result through the peripheral. If the test result is consistent with the theoretical situation, directly record the test situation. If the test result does not match the theoretical situation, it is determined that the current test chip fails the screening process.
[0052] Although the above steps are described in the above order in the above embodiments, those skilled in the art can understand that in order to achieve the effects of this embodiment, different steps do not have to be executed in such an order, and they can be executed simultaneously (in parallel) or in a reversed order, and these simple changes are all within the protection scope of the present invention.
[0053] Terms such as "first" and "second" are used to distinguish similar objects, rather than to describe or represent a specific order or sequence.
[0054] The term "comprising" or any other similar term is intended to cover non-exclusive inclusion, so that a process, method, article, or device / equipment including a series of elements not only includes those elements, but also includes other elements not explicitly listed, or also includes elements inherent in these processes, methods, articles, or devices / equipment.
[0055] So far, the technical solution of the present invention has been described in conjunction with the preferred embodiments shown in the accompanying drawings. However, it is easily understood by those skilled in the art that the protection scope of the present invention is obviously not limited to these specific embodiments. Without departing from the principle of the present invention, those skilled in the art can make equivalent changes or substitutions to the relevant technical features, and the technical solutions after these changes or substitutions will all fall within the protection scope of the present invention.
Claims
1. A screening and testing system with an embedded RRAM microcontroller, characterized in that, The system includes: a microcontroller test system with built-in RRAM and a program memory programmer; The microcontroller test system with built-in RRAM includes a microcontroller with built-in RRAM, a peripheral circuit, and an EEPROM memory; The program memory programmer includes a programmer for on-chip RRAM and a programmer for off-chip EEPROM; The microcontroller with built-in RRAM is respectively connected to the peripheral circuit, the EEPROM memory, and the programmer for on-chip RRAM, and the EEPROM memory is connected to the programmer for off-chip EEPROM.
2. The screening and testing system of an embedded RRAM microcontroller according to claim 1, wherein The microcontroller with built-in RRAM includes on-chip RRAM, and the on-chip RRAM includes multiple RRAM cells. Each RRAM cell includes a field-effect transistor T0 and a resistive switching device R0; The field-effect transistor T0 includes an N-type field-effect transistor and a P-type field-effect transistor; The drain of the field-effect transistor T0 and the SL connection terminal are the first pole, the forward operation terminal of the resistive switching device and the BL connection terminal are the second pole, the reverse operation terminal of the resistive switch and the source of the field-effect transistor T0 are the third pole, and the word line WL and the gate of the field-effect transistor T0 are the fourth pole; By applying a write pulse to the second pole and a write gate voltage pulse to the fourth pole, the on-chip RRAM performs a write operation; By applying a read pulse to the second pole and a write gate voltage pulse to the fourth pole, the on-chip RRAM performs a read operation.
3. A screening test method for an RRAM-integrated microcontroller, based on the screening test system for an RRAM-integrated microcontroller according to any one of claims 1-2, characterized in that, It includes the following steps: Step 1, execute a preset test process based on the screening test system for the microcontroller with built-in RRAM, and sequentially determine whether the process passes; the test process includes a programming function test, a byte read test, a bit read test, and a function test; Step 2, if all the preset test processes pass, then determine that the currently tested microcontroller is a qualified product and passes the screening process; if any one of the preset test processes fails, then immediately determine that the currently tested microcontroller is an unqualified product and fails the screening process.
4. A screening and testing method for an internal RRAM microcontroller according to claim 3, characterized in that The programming function test is configured as follows: send a test instruction to the programming module of the microcontroller with built-in RRAM through the programmer, and execute the corresponding function test one by one at multi-frequency baud rates. If the programming module can correctly respond and execute its function under all set baud rate conditions, then determine that the programming function test passes; otherwise, determine that the programming function test fails; the corresponding function tests include handshake, reset, and full address read and write operations.
5. A screening and testing method for an internal RRAM microcontroller according to claim 3, characterized in that, The byte read test is configured as follows: write a specific pattern group to the on-chip RRAM through the programmer; write an instruction to read the program in the EEPROM memory; read the program by executing the instruction in the EEPROM memory, perform N read operations on all patterns of the on-chip RRAM, and compare the data read each time with the theoretical result; if all patterns are consistent with the theoretical result in the N read operations, then determine that the byte read test passes; otherwise, determine that the byte read test fails.
6. The screening and testing method of an in-built RRAM microcontroller according to claim 3, wherein The bit read test is configured as follows: write a physical pattern group into the on-chip RRAM through a programmer; run the programmer again, perform a read operation on the patterns written in the on-chip RRAM, calculate the bit success rate based on the ratio of the correctly read bits to the total number of bits. If the bit success rate of all patterns exceeds X%, it is determined that the bit read test passes and the function test is carried out; otherwise, it is determined that the bit read test fails.
7. A screening and testing method for an internal RRAM microcontroller according to claim 3, characterized in that, The function test is configured as follows: write a function vector group into the on-chip RRAM through a programmer; cooperate with the peripheral circuit to execute the written function vector group N times and compare the execution result of each time with the theoretical result; if the execution results of all vectors executed N times are consistent with the theoretical results, it is determined that the function test passes; otherwise, it is determined that the function test fails.
8. A screening and testing method for an in-built RRAM microcontroller according to claim 5, characterized in that The value of N is set according to the process characteristics and design specifications of the microcontroller of the on-chip RRAM.
9. A screening and testing method for an in-built RRAM microcontroller according to claim 6, characterized in that The success rate is set according to the process characteristics and error correction ability of the on-chip RRAM.
10. A screening and testing method for an embedded RRAM microcontroller according to claim 7, characterized in that, The function test includes basic instructions, data storage, peripheral functions, low power mode, complex mathematical operations, multi-frequency baud rate communication.