Substrate structure and manufacturing method thereof

Abstract

The invention provides a substrate structure and a manufacturing method thereof. The substrate structure comprises a first base material and a second base material. The first substrate comprises a first glass plate and at least one first conductive through hole penetrating through the first glass plate. The second substrate comprises a second glass plate and at least one second conductive through hole penetrating through the second glass plate. The second substrate is connected to the first substrate. The second glass plate is bonded to the first glass plate through a chemical bonding force, and a chemical bonding contact surface is defined between the second glass plate and the first glass plate. The at least one second conductive through hole is bonded to the at least one first conductive through hole through metal diffusion, and at least one metal bonding contact surface is defined between the at least one second conductive through hole and the at least one first conductive through hole. According to the substrate structure and the manufacturing method thereof, the glass through hole with the high aspect ratio is formed through chemical bonding force and metal diffusion bonding force, and the substrate structure and the manufacturing method thereof have the advantages that the manufacturing process is simple, the cost can be reduced, and the productivity can be increased.

Description

Technical Field

[0001] The present invention relates to a substrate structure and a manufacturing method thereof, and more particularly to a substrate structure having conductive vias and a manufacturing method thereof. Background Art

[0002] Currently, to fabricate glass through-holes (TGVs) with a high aspect ratio (AR) in a glass substrate, the glass substrates are usually butt-joined by a resin material, and the conductive paste in the resin material is used to electrically connect the glass through-holes in the two glass substrates. That is to say, after the two glass substrates are butt-joined, there is conductive paste between the glass through-holes. Alternatively, the thickness of the used glass substrate is greater than 200 microns, such as 500 microns, and glass through-holes with a high aspect ratio are formed through processes such as laser, etching, and hole filling. It can be seen that it is difficult to fabricate glass through-holes with a high aspect ratio in a glass substrate. Summary of the Invention

[0003] The present invention is directed to a substrate structure and a manufacturing method thereof, which utilize chemical bonding force and metal diffusion bonding force to form glass through-holes with a high aspect ratio, and have the advantages of simple manufacturing process, cost reduction, and increased production capacity.

[0004] According to an embodiment of the present invention, the substrate structure includes a first substrate and a second substrate. The first substrate includes a first glass plate and at least one first conductive via penetrating the first glass plate. The second substrate includes a second glass plate and at least one second conductive via penetrating the second glass plate. The second substrate is connected to the first substrate. The second glass plate is joined to the first glass plate by chemical bonding force and defines a chemical bonding contact surface with the first glass plate. At least one second conductive via is joined to at least one first conductive via by metal diffusion bonding and defines at least one metal bonding contact surface with at least one first conductive via.

[0005] In the substrate structure according to an embodiment of the present invention, the above substrate structure further includes a first metal layer and a second metal layer. The first metal layer is disposed on at least one first end of at least one first conductive via. The second metal layer is disposed on at least one second end of at least one second conductive via. At least one first end faces at least one second end. The second metal layer is joined to the first metal layer and defines at least one metal bonding contact surface with the first metal layer.

[0006] In the substrate structure according to an embodiment of the present invention, the materials of at least one first conductive via and at least one second conductive via respectively include copper. The materials of at least one first metal layer and at least one second metal layer respectively include gold.

[0007] In a substrate structure according to an embodiment of the present invention, the above-mentioned first substrate further includes a first silicon oxide layer, which coats the peripheral surface of the first glass plate and is partially located between at least one first conductive via and the first glass plate. The second substrate further includes a second silicon oxide layer, which coats the peripheral surface of the second glass plate and is partially located between at least one second conductive via and the second glass plate. The second silicon oxide layer is joined to the first silicon oxide layer, and a chemical bonding contact surface is defined between the first silicon oxide layers.

[0008] In a substrate structure according to an embodiment of the present invention, the first thickness of the above-mentioned first glass plate and the second thickness of the second glass plate are respectively greater than 50 microns and less than or equal to 400 microns.

[0009] In a substrate structure according to an embodiment of the present invention, the first diameter of the above-mentioned at least one first conductive via and the second diameter of the at least one second conductive via are respectively greater than 10 microns and less than or equal to 100 microns.

[0010] According to an embodiment of the present invention, a substrate structure includes a first substrate and a second substrate. The first substrate includes a first glass plate, at least one first conductive via penetrating the first glass plate, and a first organic resin layer. The first organic resin layer is joined to the first surfaces and the second surfaces of the first glass plate opposite to each other by chemical bonding force. The second substrate includes a second glass plate, at least one second conductive via penetrating the second glass plate, and a second organic resin layer. The second organic resin layer is joined to the third surfaces and the fourth surfaces of the second glass plate opposite to each other by chemical bonding force. The second substrate is connected to the first substrate. The second organic resin layer is joined to the first organic resin layer by high-temperature plasticization, and a resin bonding contact surface is defined between the second organic resin layer and the first organic resin layer. At least one second conductive via is joined to at least one first conductive via by metal diffusion, and at least one metal bonding contact surface is defined between the at least one second conductive via and the at least one first conductive via.

[0011] In a substrate structure according to an embodiment of the present invention, the above-mentioned substrate structure further includes a first metal layer and a second metal layer. The first metal layer is disposed on at least one first end of at least one first conductive via. The second metal layer is disposed on at least one second end of at least one second conductive via. At least one first end faces at least one second end. The second metal layer is joined to the first metal layer, and at least one metal bonding contact surface is defined between the second metal layer and the first metal layer.

[0012] In a substrate structure according to an embodiment of the present invention, the materials of the above-mentioned first organic resin layer and the second organic resin layer respectively include liquid crystal polymer.

[0013] In a substrate structure according to an embodiment of the present invention, the first thickness of the above-mentioned first glass plate and the second thickness of the second glass plate are respectively greater than 50 microns and less than or equal to 400 microns.

[0014] In a substrate structure according to an embodiment of the present invention, the first diameter of the at least one first conductive via and the second diameter of the at least one second conductive via are each greater than 10 micrometers and less than or equal to 100 micrometers.

[0015] According to an embodiment of the present invention, a method for manufacturing a substrate structure includes the following steps. Provide a first substrate and a second substrate. The first substrate includes a first glass plate and at least one first conductive via penetrating the first glass plate. The second substrate includes a second glass plate and at least one second conductive via penetrating the second glass plate. Bond the second substrate to the first substrate. The second glass plate is bonded to the first glass plate by a chemical bonding force and a chemical bonding contact surface is formed between the second glass plate and the first glass plate. The at least one second conductive via is bonded to the at least one first conductive via by metal diffusion and at least one metal bonding contact surface is formed between the at least one second conductive via and the at least one first conductive via.

[0016] In the method for manufacturing a substrate structure according to an embodiment of the present invention, the method for manufacturing the substrate structure further includes forming a first metal layer on at least one first end of the at least one first conductive via and forming a second metal layer on at least one second end of the at least one second conductive via before bonding the second substrate to the first substrate, wherein at least one first end faces at least one second end. When bonding the second substrate to the first substrate, the second metal layer is bonded to the first metal layer and at least one metal bonding contact surface is defined between the second metal layer and the first metal layer.

[0017] In the method for manufacturing a substrate structure according to an embodiment of the present invention, the method for manufacturing the substrate structure further includes forming a first silicon oxide layer to coat the peripheral surface of the first glass plate, wherein a part of the first silicon oxide layer is located between the at least one first conductive via and the first glass plate; and forming a second silicon oxide layer to coat the peripheral surface of the second glass plate, wherein a part of the second silicon oxide layer is located between the at least one second conductive via and the second glass plate. When bonding the second substrate to the first substrate, the second silicon oxide layer is bonded to the first silicon oxide layer and a chemical bonding contact surface is defined between the first silicon oxide layers.

[0018] Based on the above, in the substrate structure and its manufacturing method of the present invention, the second glass plate is bonded to the first glass plate by a chemical bonding force and a chemical bonding contact surface is defined between the second glass plate and the first glass plate, and the second conductive via is bonded to the first conductive via by metal diffusion and a metal bonding contact surface is defined between the second conductive via and the first conductive via, so that the second substrate is connected to the first substrate to form a substrate structure having glass vias with a high aspect ratio. Compared with the prior art, the present invention does not need to additionally add a resin material with a conductive paste, and can have the advantages of simple process, cost reduction and production capacity increase. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figures 1A to 1B is a cross-sectional schematic view of a method for manufacturing a substrate structure according to an embodiment of the present invention;

[0020] Figures 2A to 2B is a cross-sectional schematic view of a method for manufacturing a substrate structure according to another embodiment of the present invention;

[0021] Figures 3A to 3B is a cross-sectional schematic view of a method for manufacturing a substrate structure according to another embodiment of the present invention;

[0022] Figures 4A to 4B is a cross-sectional schematic view of a method for manufacturing a substrate structure according to another embodiment of the present invention;

[0023] Figures 5A to 5B is a cross-sectional schematic view of a method for manufacturing a substrate structure according to another embodiment of the present invention;

[0024] Figures 6A to 6B is a cross-sectional schematic view of a method for manufacturing a substrate structure according to another embodiment of the present invention.

[0025] Description of Reference Numerals

[0026] 100a, 100b, 100c, 100d, 100e, 100f: Substrate structure;

[0027] 110a, 110b, 110c, 110d, 110e, 110f: First substrate;

[0028] 111e, 111f: First surface;

[0029] 113e, 113f: Second surface;

[0030] 112a, 112b, 112c, 112d, 112e, 112f: First glass plate;

[0031] 114a, 114b, 114c, 114d, 114e, 114f: First conductive via;

[0032] 115b, 115d, 115f: First end;

[0033] 116c, 116d: First silicon oxide layer;

[0034] 116e, 116f: First organic resin layer;

[0035] 120a, 120b, 120c, 120d, 120e, 120f: Second substrate;

[0036] 121e, 121f: Third surface;

[0037] 123e, 123f: The fourth surface;

[0038] 122a, 122b, 122c, 122d, 122e, 122f: The second glass plate;

[0039] 124a, 124b, 124c, 124d, 124e, 124f: The second conductive via;

[0040] 125b, 125d, 125f: The second end;

[0041] 126c, 126d: The second silicon oxide layer;

[0042] 126e, 126f: The second organic resin layer;

[0043] 130: The first metal layer;

[0044] 140: The second metal layer;

[0045] C1, C2, C3, C4: The chemical bonding contact surface;

[0046] C5, C6: The resin bonding contact surface;

[0047] D1: The first diameter;

[0048] D2: The second diameter;

[0049] M1, M2, M3, M4: The metal bonding contact surface;

[0050] M5, M6: The metal bonding contact surface;

[0051] T1: The first thickness;

[0052] T2: The second thickness. Detailed implementation manners

[0053] Reference will now be made in detail to the exemplary embodiments of the present invention, examples of which are illustrated in the accompanying drawings. Whenever possible, the same reference numerals are used in the drawings and the description to refer to the same or like parts.

[0054] The embodiments of the present invention can be understood in conjunction with the accompanying drawings, and the accompanying drawings of the present invention are also regarded as part of the disclosure. It should be understood that the accompanying drawings of the present invention are not drawn to scale. In fact, the dimensions of the elements may be arbitrarily enlarged or reduced to clearly show the features of the present invention.

[0055] Figures 1A to 1B is a cross-sectional schematic view of a method for manufacturing a substrate structure according to an embodiment of the present invention. According to the method for manufacturing the substrate structure of this embodiment, first, please refer toFigure 1A A first substrate 110a and a second substrate 120a are provided. The first substrate 110a includes a first glass plate 112a and at least one first conductive via penetrating the first glass plate 112a (two first conductive vias 114a are schematically shown). The first thickness T1 of the first glass plate 112a is, for example, greater than 50 microns and less than or equal to 400 microns. The first conductive via 114a is a glass via, and its material is, for example, copper, wherein the first diameter D1 of the first conductive via 114a is, for example, greater than 10 microns and less than or equal to 100 microns.

[0056] The second substrate 120a includes a second glass plate 122a and at least one second conductive via penetrating the second glass plate 122a (two second conductive vias 124a are schematically shown). The second thickness T2 of the second glass plate 122a is, for example, greater than 50 microns and less than or equal to 400 microns. The second conductive via 124a is a glass via, and its material is, for example, copper, wherein the second diameter D2 of the second conductive via 124a is, for example, greater than 10 microns and less than or equal to 100 microns. Herein, the structure and dimensions of the first substrate 110a are substantially the same as the structure and dimensions of the second substrate 120a. In one embodiment, the first thickness T1 of the first glass plate 112a may be different from the second thickness T2 of the second glass plate 122a, but the first diameter D1 of the first conductive via 114a must be equal to the second diameter D2 of the second conductive via 124a.

[0057] Next, please refer to Figure 1A A hydrolysis process, that is, a so-called hydrolysis reaction, is performed on the surface of the first glass plate 112a of the first substrate 110a and the surface of the second glass plate 122a of the second substrate 120a, so as to form covalent bonds on the surface of the first glass plate 112a and the surface of the second glass plate 122a. It should be noted that in the concept of organic chemistry, the hydrolysis reaction refers to the reaction of water with another compound, and the compound decomposes into two parts. The H+ in water is added to one part, and the hydroxyl group (-OH) is added to the other part, thus obtaining a reaction process of two or more new compounds; in the concept of inorganic chemistry, it is the reaction of a weak acid root or a weak base ion with water to generate a weak acid and a hydroxide ion (OH-) (or a weak base and a hydrogen ion (H+).

[0058] After that, please refer to Figure 1B, the second substrate 120a is joined to the first substrate 110a at a high temperature, where the second glass plate 122a is joined to the first glass plate 112a by chemical bonding force and a chemical bonding contact surface C1 is formed between the second glass plate 122a and the first glass plate 112a. On the other hand, the second conductive via 124a is joined to the first conductive via 114a by metal diffusion and a metal bonding contact surface M1 is formed between the second conductive via 124a and the first conductive via 114a. Thus, the fabrication of the substrate structure 100a is completed.

[0059] Structurally, please refer to Figure 1B again. The substrate structure 100a includes a first substrate 110a and a second substrate 120a. The first substrate 110a includes a first glass plate 112a and a first conductive via 114a penetrating through the first glass plate 112a. The second substrate 120a includes a second glass plate 122a and a second conductive via 124a penetrating through the second glass plate 122a. The second substrate 120a is connected to the first substrate 110a. The second glass plate 122a is joined to the first glass plate 112a by chemical bonding force and a chemical bonding contact surface C1 is defined between the second glass plate 122a and the first glass plate 112a. The second conductive via 124a is joined to the first conductive via 114a by metal diffusion and a metal bonding contact surface M1 is defined between the second conductive via 124a and the first conductive via 114a. Here, the second glass plate 122a directly contacts the first glass plate 112a, and the second conductive via 124a directly contacts the first conductive via 114a.

[0060] In short, in this embodiment, the second glass plate 122a is joined to the first glass plate 112a by chemical bonding force and a chemical bonding contact surface C1 is defined between the second glass plate 122a and the first glass plate 112a, while the second conductive via 124a is joined to the first conductive via 114a by metal diffusion and a metal bonding contact surface M1 is defined between the second conductive via 124a and the first conductive via 114a, so that the second substrate 120a is connected to the first substrate 110a to form a substrate structure 100a with a glass via having a high aspect ratio. Compared with the prior art, this embodiment does not need to additionally add a resin material with conductive paste and / or adopt a thick glass substrate, and has the advantages of simple manufacturing process, cost reduction and production capacity increase.

[0061] Other embodiments will be listed below for illustration. It must be noted here that the following embodiments follow the component numbers and some contents of the foregoing embodiments, where the same numbers are used to represent the same or similar components, and the description of the same technical content is omitted. For the description of the omitted parts, reference can be made to the foregoing embodiments, and the following embodiments will not be repeated.

[0062] Figures 2A to 2B is a cross-sectional schematic view of a method for fabricating a substrate structure according to another embodiment of the present invention. Please refer to Figure 1A andFigure 2A , the manufacturing method of the substrate structure of this embodiment is similar to that of the above-mentioned substrate structure. However, the main difference between the two is that: in this embodiment, before bonding the second substrate 120b to the first substrate 110b, a first metal layer 130 is formed on the first end 115b of the first conductive via 114b, and a second metal layer 140 is formed on the second end 125b of the second conductive via 124b, where the first end 115b faces the second end 125b. The materials of the first metal layer 130 and the second metal layer 140 are, for example, gold, and can be respectively deposited on the first conductive via 114b and the second conductive via 124b through plating processes such as electroless plating, immersion plating, or similar processes.

[0063] Next, please refer to Figure 2A again. A hydrolysis process is performed on the surface of the first glass plate 112b of the first substrate 110b and the surface of the second glass plate 122b of the second substrate 120b, and covalent bonds are formed on the surfaces of the first glass plate 112b and the second glass plate 122b.

[0064] After that, please refer to Figure 2B again. The second substrate 120b is bonded to the first substrate 110b at a high temperature. Among them, the second glass plate 122b is bonded to the first glass plate 112b through chemical bonding force and a chemical bonding contact surface C2 is formed between the second glass plate 122b and the first glass plate 112b. On the other hand, the second metal layer 140 is bonded to the first metal layer 130 through metal diffusion and a metal bonding contact surface M2 is defined between the second metal layer 140 and the first metal layer 130. Here, the second glass plate 122b directly contacts the first glass plate 112b, and the second metal layer 140 directly contacts the first metal layer 130. Thus, the manufacturing of the substrate structure 100b with a high aspect ratio glass via has been completed.

[0065] Figures 3A to 3B is a cross-sectional schematic diagram of a manufacturing method of a substrate structure according to another embodiment of the present invention. Please refer to Figure 1A and Figure 3AThe manufacturing method of the substrate structure of the present embodiment is similar to the manufacturing method of the substrate structure described above, but the main difference between the two is that: in the present embodiment, before bonding the second substrate 120c to the first substrate 110c, a first silicon oxide layer 116c is formed to cover the peripheral surface of the first glass plate 112c, wherein a portion of the first silicon oxide layer 116c is located between the first conductive via 114c and the first glass plate 112c, and a second silicon oxide layer 126c is formed to cover the peripheral surface of the second glass plate 122c, wherein a portion of the second silicon oxide layer 126c is located between the second conductive via 124c and the second glass plate 122c. In one embodiment, the first silicon oxide layer 116c can be formed on the first glass plate 112c and the second silicon oxide layer 126c can be formed on the second glass plate 122c by, for example, deposition. The material of the first silicon oxide layer 116c and the material of the second silicon oxide layer 126c can be, for example, silicon dioxide, respectively, but are not limited thereto.

[0066] Next, please refer to Figure 3A , the first silicon oxide layer 116c of the first substrate 110c and the second silicon oxide layer 126c of the second substrate 120c are chemically treated, and chemical bonds are formed between the surface of the first silicon oxide layer 116c and the surface of the second silicon oxide layer 126c. The chemical treatment described here is the so-called hydrolysis reaction, and covalent bonds are formed between the surface of the first glass plate 112a and the surface of the second glass plate 122a. It should be noted that the hydrolysis reaction, in the concept of organic chemistry, refers to the reaction of water with another compound, and the compound is decomposed into two parts, H+ in the water is added to one part, and hydroxyl (-OH) is added to the other part, thereby obtaining a reaction process of two or more new compounds; the concept in inorganic chemistry is the reaction of weak acid radicals or weak base ions with water to generate weak acids and hydroxide ions (OH-) (or weak bases and hydrogen ions (H+).

[0067] Afterwards, please refer to Figure 3B , the second substrate 120c is bonded to the first substrate 110c at a high temperature, wherein the second silicon oxide layer 126c is bonded to the first silicon oxide layer 116c by chemical bonding force and a chemical bonding contact surface C3 is defined between the first silicon oxide layers 116c. On the other hand, the second conductive via 124c is bonded to the first conductive via 114c by metal diffusion and a metal bonding contact surface M3 is formed between the second conductive via 124c and the first conductive via 114c. At this point, the substrate structure 100c with a high aspect ratio through-glass via has been completed.

[0068] Figures 4A to 4B is a cross-sectional schematic diagram of a method for manufacturing a substrate structure according to another embodiment of the present invention. Figure 3A and Figure 4AThe manufacturing method of the substrate structure of the present embodiment is similar to the manufacturing method of the substrate structure described above, but the main difference between the two is that in the present embodiment, after forming the first silicon oxide layer 116d and the second silicon oxide layer 126d to respectively cover the peripheral surface of the first glass plate 112d and the peripheral surface of the second glass plate 122d, and before bonding the second substrate 120d to the first substrate 110d, a first metal layer 130 is formed on the first end 115d of the first conductive via 114d, and a second metal layer 140 is formed on the second end 125d of the second conductive via 124d, wherein the first end 115d faces the second end 125d. The material of the first metal layer 130 and the material of the second metal layer 140 are respectively gold, for example, and can be deposited on the first conductive via 114d and the second conductive via 124d respectively by a plating process such as electroless plating, immersion plating, or the like.

[0069] Next, please refer to Figure 4A , the first silicon oxide layer 116d of the first substrate 110d and the second silicon oxide layer 126d of the second substrate 120d are chemically treated, and chemical bonds are formed between the surface of the first silicon oxide layer 116d and the surface of the second silicon oxide layer 126d. The chemical treatment described here is the so-called hydrolysis reaction, and covalent bonds are formed between the surface of the first glass plate 112a and the surface of the second glass plate 122a. It should be noted that the hydrolysis reaction, in the concept of organic chemistry, refers to the reaction of water with another compound, and the compound is decomposed into two parts, H+ in the water is added to one part, and hydroxyl (-OH) is added to the other part, thereby obtaining a reaction process of two or more new compounds; the concept in inorganic chemistry is the reaction of weak acid radicals or weak base ions with water to generate weak acids and hydroxide ions (OH-) (or weak bases and hydrogen ions (H+).

[0070] Afterwards, please refer to Figure 4B , the second substrate 120d is bonded to the first substrate 110d at a high temperature, wherein the second silicon oxide layer 126d is bonded to the first silicon oxide layer 116d by chemical bonding force and a chemical bonding contact surface C4 is defined between the first silicon oxide layers 116d. On the other hand, the second metal layer 140 is bonded to the first metal layer 130 by metal diffusion and a metal bonding contact surface M4 is defined between the second metal layer 140 and the first metal layer 130. Thus, the substrate structure 100d with a high aspect ratio through glass hole has been completed.

[0071] Figures 5A to 5B is a cross-sectional schematic diagram of a method for manufacturing a substrate structure according to another embodiment of the present invention. Figure 1A and Figure 5A, the manufacturing method of the substrate structure of this embodiment is similar to that of the above-mentioned substrate structure. However, the main difference between the two is that in this embodiment, before bonding the second substrate 120e to the first substrate 110e, a first organic resin layer 116e is formed on the first surface 111e and the second surface 113e of the first glass plate 112e that face each other; and a second organic resin layer 126e is formed on the third surface 121e and the fourth surface 123e of the second glass plate 122e that face each other. In one embodiment, the materials of the first organic resin layer 116e and the second organic resin layer 126e are respectively, for example, Liquid Crystal Polymer (LCP), but it is not limited thereto.

[0072] Please refer to again Figure 5A , the first organic resin layer 116e is bonded to the first surface 111e and the second surface 113e of the first glass plate 112e that face each other through chemical bonding force. Specifically, a silane coupling agent is first applied to the first surface 111e and the second surface 113e of the first glass plate 112e that face each other to form a chemical bond, and then it is bonded to the first organic resin layer 116e. Similarly, the second organic resin layer 126e is bonded to the third surface 121e and the fourth surface 123e of the second glass plate 122e that face each other through chemical bonding force. A silane coupling agent is first applied to the third surface 121e and the fourth surface 123e of the second glass plate 122e that face each other to form a chemical bond, and then it is bonded to the second organic resin layer 126e.

[0073] After that, please refer to Figure 5B , when bonding the second substrate 120e to the first substrate 110e, the second organic resin layer 126e is bonded to the first organic resin layer 116e through high-temperature plasticization and a resin bonding contact surface C5 is defined between the second organic resin layer 126e and the first organic resin layer 116e. On the other hand, the second conductive via 124e is bonded to the first conductive via 114e through thermal expansion contact and metal diffusion, and a metal bonding contact surface M5 is formed between the second conductive via 124e and the first conductive via 114e. Thus, the manufacturing of the substrate structure 100e with a high aspect ratio glass via is completed.

[0074] Figures 6A to 6B is a cross-sectional schematic diagram of a manufacturing method of a substrate structure according to another embodiment of the present invention. Please refer to simultaneously Figure 5A and Figure 6AThe manufacturing method of the substrate structure of the present embodiment is similar to the manufacturing method of the substrate structure described above, but the main difference between the two is that in the present embodiment, after forming the first organic resin layer 116f on the first surface 111f and the second surface 113f of the first glass plate 112f and forming the second organic resin layer 126f on the third surface 121f and the fourth surface 123f of the second glass plate 122f, and before bonding the second substrate 120f to the first substrate 110f, a first metal layer 130 is formed on the first end 115f of the first conductive via 114f, and a second metal layer 140 is formed on the second end 125f of the second conductive via 124f, wherein the first end 115f faces the second end 125f. The material of the first metal layer 130 and the material of the second metal layer 140 are respectively gold, and can be deposited on the first conductive via 114f and the second conductive via 124f respectively by a plating process such as electroless plating, immersion plating or the like.

[0075] Afterwards, please refer to Figure 6B , the second substrate 120f is bonded to the first substrate 110f at high temperature, wherein the second organic resin layer 126f is bonded to the first organic resin layer 116f by high temperature plasticization and defines a resin bonding contact surface C6 with the first organic resin layer 116f. On the other hand, the second metal layer 140 is bonded to the first metal layer 130 by thermal expansion contact and metal diffusion and defines a metal bonding contact surface M6 with the first metal layer 130. Thus, the substrate structure 100f with a high aspect ratio through-glass hole has been completed.

[0076] In summary, in the substrate structure and manufacturing method of the present invention, the second glass plate is bonded to the first glass plate by chemical bonding force and defines a chemical bonding contact surface with the first glass plate, and the second conductive via is bonded to the first conductive via by metal diffusion and defines a metal bonding contact surface with the first conductive via, so that the second substrate is connected to the first substrate to form a substrate structure with a glass via with a high aspect ratio. Compared with the prior art, the present invention does not need to add additional resin material with conductive paste, and has the advantages of simple process, reduced cost and increased production capacity.

[0077] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A substrate structure, characterized in that, Comprising: A first substrate, comprising a first glass plate and at least one first conductive via penetrating the first glass plate; And A second substrate, comprising a second glass plate and at least one second conductive via penetrating the second glass plate, the second substrate being connected to the first substrate, wherein the second glass plate is bonded to the first glass plate by chemical bonding force and a chemical bonding contact surface is defined between the second glass plate and the first glass plate, and the at least one second conductive via is bonded to the at least one first conductive via by metal diffusion and at least one metal bonding contact surface is defined between the at least one second conductive via and the at least one first conductive via.

2. The substrate structure according to claim 1, wherein Further comprising: A first metal layer, disposed on at least one first end of the at least one first conductive via; And A second metal layer, disposed on at least one second end of the at least one second conductive via, wherein the at least one first end faces the at least one second end, the second metal layer is bonded to the first metal layer and at least one metal bonding contact surface is defined between the second metal layer and the first metal layer.

3. The substrate structure according to claim 2, wherein, The materials of the at least one first conductive via and the at least one second conductive via respectively comprise copper, and the materials of the at least one first metal layer and the at least one second metal layer respectively comprise gold.

4. The substrate structure according to claim 1, wherein The first substrate further comprises a first silicon oxide layer, covering the peripheral surface of the first glass plate and partially located between the at least one first conductive via and the first glass plate; and The second substrate further comprises a second silicon oxide layer, covering the peripheral surface of the second glass plate and partially located between the at least one second conductive via and the second glass plate, wherein the second silicon oxide layer is bonded to the first silicon oxide layer and the chemical bonding contact surface is defined between the first silicon oxide layers.

5. The substrate structure according to claim 1, wherein, The first thickness of the first glass plate and the second thickness of the second glass plate are respectively greater than 50 microns and less than or equal to 400 microns.

6. The substrate structure according to claim 1, wherein The first diameter of the at least one first conductive via and the second diameter of the at least one second conductive via are respectively greater than 10 microns and less than or equal to 100 microns.

7. A substrate structure, characterized in that, Comprising: A first substrate, comprising a first glass plate, at least one first conductive via penetrating the first glass plate and a first organic resin layer, the first organic resin layer being bonded to the first surface and the second surface of the first glass plate opposite to each other by chemical bonding force; And A second substrate, comprising a second glass plate, at least one second conductive via penetrating the second glass plate and a second organic resin layer, the second organic resin layer being bonded to the third surface and the fourth surface of the second glass plate opposite to each other by chemical bonding force, the second substrate being connected to the first substrate, wherein the second organic resin layer is bonded to the first organic resin layer by high-temperature plasticization and a resin bonding contact surface is defined between the second organic resin layer and the first organic resin layer, and the at least one second conductive via is bonded to the at least one first conductive via by metal diffusion and at least one metal bonding contact surface is defined between the at least one second conductive via and the at least one first conductive via.

8. The substrate structure according to claim 7, wherein: a first metal layer disposed on at least one first end of the at least one first conductive via; and a second metal layer disposed on at least one second end of the at least one second conductive via, wherein the at least one first end faces the at least one second end, and the second metal layer is joined to the first metal layer and defines the at least one metal bonding contact surface therebetween.

9. The substrate structure according to claim 7, characterized in that, The materials of the first organic resin layer and the second organic resin layer each include a liquid crystal polymer.

10. The substrate structure according to claim 7, characterized in that, The first thickness of the first glass plate and the second thickness of the second glass plate are each greater than 50 and less than or equal to 400 microns.

11. The substrate structure according to claim 7, characterized in that, The first diameter of the at least one first conductive via and the second diameter of the at least one second conductive via are each greater than 10 and less than or equal to 100 microns.

12. A manufacturing method of a substrate structure, characterized in that, Comprising: providing a first substrate and a second substrate, the first substrate including a first glass plate and at least one first conductive via penetrating the first glass plate, and the second substrate including a second glass plate and at least one second conductive via penetrating the second glass plate; and joining the second substrate to the first substrate, wherein the second glass plate is joined to the first glass plate by a chemical bonding force and forms a chemical bonding contact surface therebetween, and the at least one second conductive via is joined to the at least one first conductive via by metal diffusion and forms at least one metal bonding contact surface therebetween.

13. The manufacturing method of the substrate structure according to claim 12, wherein, Further comprising: before joining the second substrate to the first substrate, forming a first metal layer on at least one first end of the at least one first conductive via; and forming a second metal layer on at least one second end of the at least one second conductive via, wherein the at least one first end faces the at least one second end; and when joining the second substrate to the first substrate, the second metal layer is joined to the first metal layer and defines the at least one metal bonding contact surface therebetween.

14. The manufacturing method of the substrate structure according to claim 12, characterized in that, Further comprising: before joining the second substrate to the first substrate, forming a first silicon oxide layer to coat the peripheral surface of the first glass plate, wherein a part of the first silicon oxide layer is located between the at least one first conductive via and the first glass plate; and forming a second silicon oxide layer to coat the peripheral surface of the second glass plate, wherein a part of the second silicon oxide layer is located between the at least one second conductive via and the second glass plate; and when joining the second substrate to the first substrate, the second silicon oxide layer is joined to the first silicon oxide layer and defines the chemical bonding contact surface therebetween.

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