Bidirectional amplifier structure, front-end system, chip array element and phased array system

Abstract

The invention discloses a bidirectional amplifier structure, a front-end system, a chip array element and a phased array system. The bidirectional amplifier structure comprises a differential mode signal amplification path; a common mode signal amplification path; the four-branch waveguide joint comprises a common-mode amplification interface, two differential-mode amplification interfaces and two antenna interfaces, the differential-mode amplification interfaces are in one-to-one correspondence with the antenna interfaces, the differential-mode amplification interfaces are connected with the differential-mode signal amplification path, and the common-mode amplification interface is connected with the common-mode signal amplification path; the amplification stage comprises a differential amplification circuit and a common mode amplification circuit; and the matching stage comprises a differential mode matching structure and a common mode matching structure, the differential mode matching structure is connected with the differential amplification circuit, and the common mode matching structure is connected with the common mode amplification circuit. According to the structure of the bidirectional amplifier, the working mode of simultaneous working or time-sharing working is realized by utilizing the characteristics of a signal differential mode and a common mode, and the bidirectional amplifier has higher working efficiency, higher circuit multiplexing rate and higher integration level. The invention relates to the technical field of microwave communication.

Description

Technical Field

[0001] This application relates to the field of microwave communication technologies, and particularly relates to a bidirectional amplifier structure, a front-end system, a chip array element, and a phased array system. Background Art

[0002] The millimeter-wave terahertz frequency band has abundant available spectrum resources and is the target operating frequency band of the next-generation wireless communication system. Benefiting from its larger absolute bandwidth, it can support gigabit- or even terabit-rate transmission, as well as ultra-low latency communication in milliseconds or even microseconds and radar sensing with ultra-high range resolution. At the same time, 6G radar sensing applications also have requirements for angular resolution. To improve the angular resolution, the operating frequency band needs to be high. However, the electromagnetic waves in the millimeter-wave terahertz frequency band have very large air attenuation, severely limiting the operating distance of wireless systems. To meet the requirements of 6G Internet of Everything-related applications, millimeter-wave terahertz large-scale phased arrays have become an ideal solution.

[0003] Currently, in the field of millimeter-wave terahertz large-scale phased array systems, the following problems still need to be solved urgently:

[0004] (1) Low degree of transceiver circuit multiplexing: In the publicly available literature, the transceiver circuits and antennas cannot be multiplexed. Therefore, two sets of independent circuits need to be designed to process the transmitted signal and the received signal respectively, increasing the area cost of the system. In the terahertz frequency band, too large an area of the chip array element will cause too large side-lobe gain of the array, affecting the function of the system.

[0005] (2) Low degree of radar function and communication function circuit multiplexing: In the publicly available literature, since the waveforms of the radar mode and the communication mode cannot be multiplexed, independent circuits are required to process the radar signal and the communication signal respectively.

[0006] (3) Lack of large-scale phased array systems in the millimeter-wave frequency band: In the publicly available literature, only a single communication and sensing integrated chip system has been studied.

[0007] In summary, higher operating frequencies, higher integration levels, higher circuit multiplexing rates, and larger-scale arrays are an inevitable trend in the future development of millimeter-wave communication and sensing integrated RF front-end chips. Therefore, how to realize an ultra-wideband, fully integrated, and large-aperture millimeter-wave communication and sensing integrated phased array system is an important issue worthy of in-depth study. Summary of the Invention

[0008] This application aims to solve at least one of the technical problems existing in the prior art. For this purpose, this application proposes a bidirectional amplifier structure with higher operating frequency, higher integration level, and higher circuit multiplexing rate.

[0009] The present application also provides a front-end system, a chip array element, and a phased array system having the above-mentioned bidirectional amplifier structure, which can achieve ultra-wideband, fully integrated, and large-aperture signal transmission and reception.

[0010] The bidirectional amplifier structure according to the first aspect embodiment of the present application includes:

[0011] Differential-mode signal amplification path;

[0012] Common-mode signal amplification path;

[0013] A four-branch waveguide joint, which includes two differential-mode amplification interfaces, one common-mode amplification interface, and two antenna interfaces. The differential-mode amplification interfaces are connected to the antenna interfaces in one-to-one correspondence. The differential-mode amplification interfaces are connected to the differential-mode signal amplification path, and the common-mode amplification interface is connected to the common-mode signal amplification path;

[0014] An amplification stage, which includes a differential amplification circuit and a common-mode amplification circuit;

[0015] A matching stage, which includes a differential-mode matching structure and a common-mode matching structure. The differential-mode matching structure is connected to the differential amplification circuit, and the common-mode matching structure is connected to the common-mode amplification circuit.

[0016] The bidirectional amplifier structure according to the embodiment of the present application has at least the following beneficial effects: By utilizing the characteristics of differential-mode and common-mode signals, a working mode that can work simultaneously or time-divisionally is realized, with higher working efficiency and circuit multiplexing rate, and higher integration.

[0017] According to some embodiments of the present application, the differential-mode amplification interface transmits the signal to the antenna interface through the coupling between the slot line and the conductor; or the antenna interface transmits the signal to the differential-mode amplification interface through the coupling between the slot line and the conductor.

[0018] According to some embodiments of the present application, the differential amplification circuit adopts a common-source structure with a neutralization capacitor, and the common-mode amplification circuit adopts a common-source structure.

[0019] According to some embodiments of the present application, the differential amplification circuit is replaced by a differential-mode mixer, and the differential-mode matching structure is connected to the differential-mode mixer; the common-mode amplification circuit is replaced by a common-mode mixer, and the common-mode matching structure is connected to the common-mode mixer.

[0020] The front-end system according to the second aspect embodiment of the present application includes:

[0021] A bidirectional transceiver, which includes the above-mentioned bidirectional amplifier structure and a demodulator, and the demodulator is electrically connected to the bidirectional amplifier structure;

[0022] The local oscillator link includes an input end and an output end. The input end is used to receive a reference frequency signal, and the output end is connected to the input end of the demodulator.

[0023] The bidirectional baseband includes a data input end, a data output end, and an intermediate frequency port. The data input end is connected to the output end of the demodulator. The data output end is connected to the input end of the bidirectional amplifier structure. The intermediate frequency port is used to input or output data signals.

[0024] The front-end system according to the embodiment of the present application has at least the following beneficial effects: The front-end system supports direct digital sequence amplitude modulation, realizes the multiplexing of radar communication circuits, adopts the proposed bidirectional amplifier, realizes single-antenna transceiver, and realizes high-energy-efficiency frequency doubling.

[0025] According to some embodiments of the present application, the local oscillator link includes a phase shifter, a square wave shaper, a super-regenerative oscillator, a class F oscillator, and a filter amplifier. The input end of the phase shifter is the input end of the local oscillator link. The output end of the phase shifter is connected to the input end of the square wave shaper. The output end of the square wave shaper is connected to the input end of the super-regenerative oscillator. The output end of the super-regenerative oscillator is connected to the input end of the class F oscillator. The output end of the class F oscillator is connected to the input end of the filter amplifier. The output end of the filter amplifier is the output end of the local oscillator link.

[0026] According to some embodiments of the present application, the bidirectional baseband includes a received analog signal delay circuit, a transmitted digital signal delay circuit, an active balun circuit, and a signal shaping circuit. The input end of the active balun circuit is the data input end of the baseband. The output end of the active balun circuit is connected to the input end of the received analog signal delay circuit. The output end of the received analog signal delay circuit is common to the input end of the signal shaping circuit and the intermediate frequency port of the bidirectional baseband. The output end of the signal shaping circuit is connected to the input end of the transmitted digital signal delay circuit. The output end of the transmitted digital signal delay circuit is the data output end of the bidirectional baseband.

[0027] According to some embodiments of the present application, the front-end system further includes an on-chip antenna or an antenna interface. The on-chip antenna or the antenna interface is placed diagonally.

[0028] The chip element according to the embodiment of the third aspect of the present application includes:

[0029] A data signal port, a reference frequency signal port, a power splitting network system, and two of the above-mentioned front-end systems. The two front-end systems are axially symmetrically arranged. The power splitting network system includes a bidirectional data signal power splitting network and a unidirectional reference frequency signal power splitting network.

[0030] The split ends of the bidirectional data signal power splitter network are connected to the intermediate frequency ports of the two front-end systems, and the combined end of the bidirectional data signal power splitter network is connected to the data signal port; the split ends of the unidirectional reference frequency signal power splitter network are connected to the bidirectional transceivers of the two front-end systems, and the combined end of the unidirectional reference frequency signal power splitter network is connected to the reference frequency signal port.

[0031] The chip element according to the embodiment of the present application has at least the following beneficial effects: The proposed bidirectional radio frequency front-end system is adopted in this chip element, and the diagonal layout provides beneficial effects for reducing the sidelobe interference of the array.

[0032] The phased array system according to the embodiment of the fourth aspect of the present application includes:

[0033] The above-mentioned chip element;

[0034] Motherboard;

[0035] Substrates, which are arranged in an array on the motherboard;

[0036] Wherein, the chip element amplitude-modulates the carrier signal according to the data signal to obtain a modulated signal; the substrate transmits the modulated signal to the chip element and receives the echo signal.

[0037] The phased array system according to the embodiment of the present application has at least the following beneficial effects: The proposed bidirectional chip element is adopted in this phased array system, realizing the multiplexing of the transceiver circuit and the communication sensing circuit, and supporting full-duplex applications.

[0038] The additional aspects and advantages of the present application will be partially given in the following description, partially become obvious from the following description, or be understood through the practice of the present application. Description of the Drawings

[0039] The drawings are used to provide a further understanding of the technical solutions disclosed in the present application, and constitute a part of the specification. Together with the embodiments disclosed in the present application, they are used to explain the technical solutions of the present disclosure, and do not constitute a limitation to the technical solutions disclosed in the present application.

[0040] Figure 1 It is a schematic diagram of the principle framework of the bidirectional amplifier according to the embodiment of the first aspect of the present application;

[0041] Figure 2 It is a schematic diagram of the structure of the four-branch waveguide joint in the bidirectional amplifier according to the embodiment of the first aspect of the present application;

[0042] Figure 3 It is a schematic diagram of the structure of the bidirectional amplifier according to the embodiment of the first aspect of the present application;

[0043] Figure 4It is a schematic structural diagram of the front-end system according to the embodiment of the second aspect of the present application;

[0044] Figure 5 It is a schematic structural diagram of the chip array element adopting a packaged antenna according to the embodiment of the third aspect of the present application;

[0045] Figure 6 It is a schematic structural diagram of the chip array element adopting an on-chip antenna according to the embodiment of the third aspect of the present application;

[0046] Figure 7 It is a schematic structural diagram of the first phased array system according to the embodiment of the fourth aspect of the present application;

[0047] Figure 8 It is a schematic structural diagram of the second phased array system according to the embodiment of the fourth aspect of the present application. Detailed implementation manners

[0048] The embodiments of the present application will be described in detail below. The examples of the embodiments are shown in the drawings, where the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the drawings are exemplary and are only used to explain the present application, and should not be construed as a limitation of the present application.

[0049] In the description of the present application, it should be understood that the orientation or positional relationship indicated by terms such as up, down, front, back, left, right, etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the present application.

[0050] In the description of the present application, the meaning of several is more than one, and the meaning of multiple is more than two. Understandings such as greater than, less than, exceeding, etc. do not include the present number, and understandings such as above, below, within, etc. include the present number. If there is a description of first and second, it is only for the purpose of distinguishing technical features and should not be construed as indicating or implying relative importance or implicitly indicating the quantity of the indicated technical features or implicitly indicating the sequence of the indicated technical features.

[0051] In the description of the present application, unless otherwise clearly defined, words such as setting, installing, connecting, etc. should be understood in a broad sense, and those skilled in the art can reasonably determine the specific meanings of the above words in the present application in combination with the specific content of the technical solution.

[0052] In the description of the present application, the description with reference to the terms "one embodiment", "some embodiments", "illustrative embodiments", "examples", "specific examples", or "some examples" means that the specific features, structures, materials, or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described may be combined in any one or more embodiments or examples in a suitable manner.

[0053] The millimeter wave terahertz band has abundant available spectrum resources and is the target operating band for the next generation of wireless communication systems. Thanks to its larger absolute bandwidth, it can support bit rate transmission at gigabits or even terabits, ultra-low latency communications at milliseconds or even microseconds, and radar perception with ultra-high distance resolution. At the same time, 6G radar perception applications also require angular resolution. To improve angular resolution, the operating frequency band must be high. However, electromagnetic waves in the millimeter wave terahertz band have very large air attenuation, and the working distance of the wireless system is severely limited. In order to meet the needs of 6G applications related to the Internet of Everything, millimeter wave terahertz large-scale phased arrays have become an ideal solution.

[0054] At present, in the field of millimeter-wave terahertz large-scale phased array systems, the following problems still need to be solved:

[0055] (1) Low reuse of transceiver circuits: In the published literature, transceiver circuits and antennas cannot be reused, so two sets of independent circuits need to be designed to process the transmit and receive signals respectively, which increases the area cost of the system. In the terahertz frequency band, the area of the chip array element is too large, which will cause the sidelobe gain of the array to be too large, affecting the function of the system.

[0056] (2) Low degree of circuit reuse for radar and communication functions: In the published literature, since the waveforms of the radar mode and the communication mode cannot be reused, independent circuits are required to process the radar signal and the communication signal respectively.

[0057] (3) Lack of large-scale phased array systems in the millimeter wave frequency band: In the published literature, only single synaesthesia integrated chip systems have been studied.

[0058] In summary, higher operating frequency, higher integration, higher circuit reuse rate and larger array are the inevitable trends in the development of millimeter-wave interaceptive integrated RF front-end chips in the future. Therefore, how to realize ultra-wideband, fully integrated and large-aperture millimeter-wave interaceptive integrated phased array system is an important issue worthy of in-depth study.

[0059] In response to this, the present application proposes a bidirectional amplifier structure, which utilizes the characteristics of differential-mode and common-mode signals to achieve a working mode that can work simultaneously or in a time-sharing manner, has higher working efficiency and circuit multiplexing rate, and has a higher degree of integration;

[0060] The present application also proposes a front-end system adopting the above-mentioned bidirectional amplifier structure, which supports direct digital sequence amplitude modulation, realizes radar communication circuit multiplexing, adopts the proposed bidirectional amplifier, realizes single-antenna transceiver, and realizes high-energy-efficiency frequency doubling;

[0061] A chip element adopting the above-mentioned front-end system adopts the proposed bidirectional radio frequency front-end system, and the diagonal layout provides beneficial effects for reducing the sidelobe interference of the array;

[0062] And a phased array system, which adopts the proposed bidirectional chip element, realizes transceiver circuit multiplexing and communication sensing circuit multiplexing, and supports full-duplex applications.

[0063] Reference Figure 1 and Figure 3 According to

[0064] and Figure 2 the bidirectional amplifier structure in the first aspect embodiment of the present application includes a differential-mode signal amplification path, a common-mode signal amplification path, a four-branch waveguide joint, an amplification stage, and a matching stage. Among them, the differential-mode signal amplification path and the common-mode signal amplification path are in opposite directions, and the number of amplification stages and matching stages is at least one.

[0065] The four-branch waveguide joint, also known as magic T, its structure refers to

[0066] and

[0067] includes two differential-mode amplification interfaces, one common-mode amplification interface, and two antenna interfaces. The differential-mode amplification interfaces are connected to the antenna interfaces in one-to-one correspondence, the differential-mode amplification interfaces are connected to the differential-mode signal amplification path, and the common-mode amplification interface is connected to the common-mode signal amplification path.

[0068] Furthermore, the differential-mode amplification interface transmits the signal to the antenna interface through the coupling between the slot line and the conductor; or the antenna interface transmits the signal to the differential-mode amplification interface through the coupling between the slot line and the conductor.

[0069] In some embodiments, the differential amplifier circuit is replaced by a differential-mode mixer, and the differential-mode matching structure is connected to the differential-mode mixer; the common-mode amplifier circuit is replaced by a common-mode mixer, and the common-mode matching structure is connected to the common-mode mixer.

[0070] Referring to Figure 4 , the front-end system in the second aspect embodiment of the present application includes a bi-directional transceiver, a local oscillator link, and a bi-directional baseband. Among them, the bi-directional transceiver includes the above-mentioned bi-directional amplifier structure and a demodulator, and the demodulator is electrically connected to the bi-directional amplifier structure. Specifically, the local oscillator link has an output end and an input end; the bi-directional transceiver has an antenna end, a local oscillator input end, a data output end, and a data input end; the bi-directional baseband has a data input end, a data output end, and an intermediate frequency port.

[0071] The input end of the local oscillator link receives the input of the reference frequency signal through the reference frequency input port, and the output end is connected to the local oscillator input end of the bi-directional transceiver; the antenna end of the bi-directional transceiver is connected to the antenna interface, and the data output end and the data input end of the bi-directional transceiver are respectively connected to the data input end and the data output end of the bi-directional baseband; the intermediate frequency port of the bi-directional baseband is used for inputting or outputting data signals.

[0072] Specifically, the local oscillator end of the demodulator is the local oscillator input end of the bi-directional transceiver, the radio frequency end of the demodulator is connected to the first radio frequency end of the bi-directional amplifier, the data end of the demodulator is the data output end of the bi-directional transceiver, the modulation end of the bi-directional amplifier is the data input end of the bi-directional transceiver, and the second radio frequency end of the bi-directional amplifier is the antenna end of the bi-directional transceiver.

[0073] The local oscillator link includes a phase shifter, a square wave shaper, a super-regenerative oscillator, a class-F oscillator, and a filter amplifier. The input end of the phase shifter is the input end of the local oscillator link, and the output end of the phase shifter is connected to the input end of the square wave shaper. The output end of the square wave shaper is connected to the input end of the super-regenerative oscillator, the output end of the super-regenerative oscillator is connected to the input end of the class-F oscillator, the output end of the class-F oscillator is connected to the input end of the filter amplifier, and the output end of the filter amplifier is the output end of the local oscillator link.

[0074] The bi-directional baseband includes a receiving analog signal delay circuit, a transmitting digital signal delay circuit, an active balun circuit, and a signal shaping circuit. The input end of the active balun circuit is the data input end of the baseband, the output end of the active balun circuit is connected to the input end of the receiving analog signal delay circuit, the output end of the receiving analog signal delay circuit is common to the input end of the signal shaping circuit and the intermediate frequency port of the bi-directional baseband, the output end of the signal shaping circuit is connected to the input end of the transmitting digital signal delay circuit, and the output end of the transmitting digital signal delay circuit is the data output end of the bi-directional baseband.

[0075] Further, in some embodiments, the front-end system further includes an on-chip antenna or an antenna interface; the on-chip antenna or the antenna interface is placed diagonally.

[0076] Referring to Figure 5 and Figure 6 , the chip element in the third aspect embodiment of the present application includes a data signal port, a reference frequency signal port, a power distribution network system, and two front-end systems. Among them Figure 5 The chip element shown in Figure 6 uses a packaged antenna.

[0077] The chip element shown in

[0078] Referring to Figure 7 and Figure 8 , the phased array system in the fourth aspect embodiment of the present application includes the above-mentioned chip element, a motherboard, and a substrate. Among them, the substrates are arranged in an array on the motherboard. The chip element amplitude-modulates a carrier signal according to a data signal to obtain a modulated signal; the substrate transmits the modulated signal to the chip element and receives an echo signal.

[0079] Further, each substrate includes an external reference frequency input port, an external data transmission port, at least one internal data transmission port, at least one internal reference frequency output port, and at least one antenna port. The substrate receives an external reference frequency signal input through the external reference frequency input port and is connected to the reference frequency input port of each chip element through the internal reference frequency output port to output a reference frequency signal, and is connected to the antenna interface of each chip element through the antenna port; and is connected to the intermediate frequency port of each chip element through the internal data transmission port to transmit a data signal.

[0080] Further, the substrate includes a power distribution network and a power supply layer, and may have an array of packaged antennas; the array of packaged antennas is connected to the antenna port for receiving and transmitting antenna signals. The power distribution network is used for power distribution among multiple chip elements, and the chip elements are mounted on the power supply layer and establish a connection relationship with the motherboard.

[0081] The phased array system architecture proposed by the present invention can support a communication rate of 5 Gbps and a ranging accuracy of 3 cm. In this system architecture, phase shifters are used for fine phase adjustment, and baseband delay units are used for coarse phase adjustment, enabling the system to meet the requirements of large-scale array formation. Experiments have proven that after forming an 8×8 phased array system, the system can achieve a ranging range of 10 m and a communication distance of 30 m.

[0082] In some alternative embodiments, the functions / operations mentioned in the block diagrams may not occur in the order mentioned in the operation diagrams. For example, depending on the functions / operations involved, two consecutive blocks shown may actually be executed substantially simultaneously or the blocks can sometimes be executed in the reverse order. In addition, the embodiments presented and described in the flowcharts of the present application are provided by way of example for the purpose of providing a more comprehensive understanding of the technology. The disclosed methods are not limited to the operations and logical flows presented herein. Alternative embodiments are contemplated where the order of various operations is changed and where sub-operations described as part of a larger operation are executed independently.

[0083] The embodiments of the present application have been described in detail above with reference to the accompanying drawings. However, the present application is not limited to the above embodiments, and various changes can be made without departing from the spirit of the present application within the scope of knowledge possessed by those of ordinary skill in the art. In addition, the embodiments of the present application and the features in the embodiments can be combined with each other without conflict.

Claims

1. A bidirectional amplifier structure, characterized in that, Comprising: Differential-mode signal amplification path; Common-mode signal amplification path; Four-branch waveguide joint, which includes two differential-mode amplification interfaces, one common-mode amplification interface and two antenna interfaces. The differential-mode amplification interfaces are connected to the antenna interfaces in one-to-one correspondence. The differential-mode amplification interfaces are connected to the differential-mode signal amplification path, and the common-mode amplification interface is connected to the common-mode signal amplification path; Amplification stage, which includes a differential amplification circuit and a common-mode amplification circuit; Matching stage, which includes a differential-mode matching structure and a common-mode matching structure. The differential-mode matching structure is connected to the differential amplification circuit, and the common-mode matching structure is connected to the common-mode amplification circuit.

2. The two-way amplifier structure according to claim 1, wherein: The differential-mode amplification interface transmits the signal to the antenna interface through the coupling between the slot line and the conductor; or the antenna interface transmits the signal to the differential-mode amplification interface through the coupling between the slot line and the conductor.

3. The bidirectional amplifier structure according to claim 1, wherein: The differential amplification circuit adopts a common-source structure with a neutralization capacitor, and the common-mode amplification circuit adopts a common-source structure.

4. The bidirectional amplifier structure according to claim 1, wherein: The differential amplification circuit is replaced by a differential-mode mixer, and the differential-mode matching structure is connected to the differential-mode mixer; the common-mode amplification circuit is replaced by a common-mode mixer, and the common-mode matching structure is connected to the common-mode mixer.

5. A front-end system, characterized in that, Comprising: Bidirectional transceiver, which includes the bidirectional amplifier structure according to any one of claims 1 to 4 and a demodulator. The demodulator is electrically connected to the bidirectional amplifier structure; Local oscillator link, which includes an input end and an output end. The input end is used to receive a reference frequency signal, and the output end is connected to the input end of the demodulator; Bidirectional baseband, which includes a data input end, a data output end and an intermediate frequency port. The data input end is connected to the output end of the demodulator, the data output end is connected to the input end of the bidirectional amplifier structure, and the intermediate frequency port is used to input or output data signals.

6. The front-end system according to claim 5, wherein: The local oscillator link includes a phase shifter, a square wave shaper, a super-regenerative oscillator, a class F oscillator and a filter amplifier; the input end of the phase shifter is the input end of the local oscillator link, the output end of the phase shifter is connected to the input end of the square wave shaper, the output end of the square wave shaper is connected to the input end of the super-regenerative oscillator, the output end of the super-regenerative oscillator is connected to the input end of the class F oscillator, the output end of the class F oscillator is connected to the input end of the filter amplifier, and the output end of the filter amplifier is the output end of the local oscillator link.

7. The front-end system according to claim 5, wherein: The bidirectional baseband includes a received analog signal delay circuit, a transmitted digital signal delay circuit, an active balun circuit and a signal shaping circuit; the input end of the active balun circuit is the data input end of the baseband, the output end of the active balun circuit is connected to the input end of the received analog signal delay circuit, the output end of the received analog signal delay circuit is common to the input end of the signal shaping circuit and the intermediate frequency port of the bidirectional baseband, the output end of the signal shaping circuit is connected to the input end of the transmitted digital signal delay circuit, and the output end of the transmitted digital signal delay circuit is the data output end of the bidirectional baseband.

8. The front-end system according to claim 5, characterized in that: The front-end system further includes an on-chip antenna or an antenna interface; the on-chip antenna or the antenna interface is placed diagonally.

9. A chip array element, characterized in that, It includes a data signal port, a reference frequency signal port, a power distribution network system, and two front-end systems as described in any one of claims 5 to 8. The two front-end systems are arranged axially symmetrically. The power distribution network system includes a bidirectional data signal power distribution network and a unidirectional reference frequency signal power distribution network. The split ends of the bidirectional data signal power distribution network are connected to the intermediate frequency ports of the two front-end systems, and the combined end of the bidirectional data signal power distribution network is connected to the data signal port; the split ends of the unidirectional reference frequency signal power distribution network are connected to the transceivers of the two front-end systems, and the combined end of the unidirectional reference frequency signal power distribution network is connected to the reference frequency signal port.

10. A phased array system, characterized in that, It includes: The chip element as described in claim 9; A motherboard; A substrate, which is arranged in an array on the motherboard; Wherein, the chip element amplitude-modulates a carrier signal according to a data signal to obtain a modulated signal; the substrate transmits the modulated signal to the chip element and receives an echo signal.

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