High-speed high-power radio frequency electronic switch and detection assembly

Abstract

The invention relates to a high-speed high-power radio frequency electronic switch and a detection assembly, and belongs to the technical field of radio frequency switch assemblies and electronic measurement and control. The radio frequency electronic switch and detection assembly comprises an MCU control module; the control end of the driving circuit is connected with the MCU control module; the input ends of the four groups of biasing circuits are connected with the output end of the driving circuit; the output ends of the four groups of bias circuits are respectively connected with the first end, the second end, the third end and the fourth end of the switch module; one end of the first radio frequency connection module is connected with the first end of the switch module; one end of the second radio frequency connection module is connected with the second end of the switch module; one end of the third radio frequency connection module is connected with the third end of the switch module; and one end of the power detection module is connected with the third radio frequency connection module, and the other end of the power detection module is connected with the MCU control module. According to the invention, the application requirements of a high-speed high-power radio frequency switch and radio frequency power detection can be effectively met.

Description

Technical Field

[0001] The present invention relates to the technical fields of radio frequency switch components and electronic measurement and control technologies, and particularly relates to a high-speed high-power radio frequency electronic switch and a detection component. Background Art

[0002] With the development of the integrated technologies of microwave communication, radar and electronic countermeasure systems, the requirement for multi-channel and multi-mode operation of the system has become the mainstream. However, the multi-channel and multi-mode of the integrated system necessarily require a radio frequency electronic switch with high-speed performance for switching. At present, high-speed radio frequency electronic switches mainly focus on medium and small power. When passing high power, the radio frequency electronic switch is easily burned out. And high-power radio frequency switches mainly focus on mechanical coaxial switches, but their switching speed is slow and cannot meet the requirements of the integrated high-speed system. Summary of the Invention

[0003] The purpose of the present invention is to provide a high-speed high-power radio frequency electronic switch and a detection component. The present invention can effectively solve the application requirements of high-speed high-power radio frequency switches and radio frequency power detection, improve the switching speed of the switch, effectively improve the passing power of radio frequency continuous waves and radio frequency pulses, and improve the accuracy of the detection voltage.

[0004] In order to achieve the above purpose, the present invention provides a high-speed high-power radio frequency electronic switch and a detection component, and the radio frequency electronic switch and the detection component include:

[0005] MCU control module;

[0006] Driver circuit, the control end of the driver circuit is connected to the MCU control module;

[0007] Four groups of bias circuits, the input ends are connected to the output end of the driver circuit, and are used for bias output of the DC voltage output by the driver circuit;

[0008] Switch module, the output ends of the four groups of bias circuits are respectively connected to the first end, the second end, the third end and the fourth end of the switch module;

[0009] First radio frequency connection module, one end is connected to the first end of the switch module;

[0010] Second radio frequency connection module, one end is connected to the second end of the switch module;

[0011] Third radio frequency connection module, one end is connected to the third end of the switch module, and the four groups of bias circuits are used to cooperate with the switch module to conduct the first radio frequency connection module and the third radio frequency connection module or the second radio frequency connection module and the third radio frequency connection module;

[0012] The power detection module is connected to the third RF connection module at one end and to the MCU control module at the other end, and is used to detect the RF power.

[0013] Optionally, the MCU control module includes:

[0014] An MCU controller;

[0015] A switch logic control circuit, one end of which is connected to the output end of the MCU controller.

[0016] Optionally, the drive circuit includes:

[0017] A PIN diode drive circuit, one end of which is connected to the output end of the switch logic control circuit;

[0018] A DC-DC boost converter, one end of which is connected to the other end of the PIN diode drive circuit.

[0019] Optionally, the four groups of bias circuits include:

[0020] Bias circuit A, the input end of which is connected to the output end of the PIN diode drive circuit;

[0021] Bias circuit B, the input end of which is connected to the output end of the PIN diode drive circuit;

[0022] Bias circuit C, the input end of which is connected to the output end of the PIN diode drive circuit;

[0023] Bias circuit D, the input end of which is connected to the output end of the PIN diode drive circuit.

[0024] Optionally, the switch module includes:

[0025] A PIN diode SDPT switch, the first end of the PIN diode SDPT switch is connected to the output end of the bias circuit A, the second end of the PIN diode SDPT switch is connected to the output end of the bias circuit B, the third end of the PIN diode SDPT switch is connected to the output end of the bias circuit C, and the fourth end of the PIN diode SDPT switch is connected to the output end of the bias circuit D.

[0026] Optionally, the first RF connection module includes:

[0027] A first capacitor, one end of which is connected to the first end of the PIN diode SDPT switch;

[0028] An RF connector A, one end of which is connected to the other end of the first capacitor.

[0029] Optionally, the second RF connection module includes:

[0030] A second capacitor, one end of which is connected to the second end of the PIN diode SDPT switch;

[0031] A radio frequency connector B, one end of which is connected to the other end of the second capacitor.

[0032] Optionally, the third radio frequency connection module includes:

[0033] A third capacitor, one end of which is connected to the third end of the PIN diode SDPT switch;

[0034] A directional coupler, one end of which is connected to the other end of the third capacitor;

[0035] A radio frequency connector C, one end of which is connected to the other end of the directional coupler.

[0036] Optionally, the power detection module includes:

[0037] A PI attenuator A, one end of which is connected to the f end of the directional coupler;

[0038] A PI attenuator B, one end of which is connected to the r end of the directional coupler;

[0039] Forward power detection, one end of which is connected to the output end of the PI attenuator A and the other end is connected to the MCU controller;

[0040] Reverse power detection, one end of which is connected to the output end of the PI attenuator B and the other end is connected to the MCU controller.

[0041] Through the above technical solutions, the purpose of the present invention is to provide a high-speed high-power radio frequency electronic switch and detection component. The radio frequency physical channels of the switch module are turned on or off through the MCU control module, the drive circuit and four groups of bias circuits. The power and frequency passing through the switch module are adjusted through the first capacitor, the second capacitor and the third capacitor, and the power detection module realizes the conversion of power to analog voltage. The present invention can effectively solve the application requirements of high-speed high-power radio frequency switches and radio frequency power detection, improve the speed of the switch, effectively improve the passing power of radio frequency continuous waves and radio frequency pulses, and improve the accuracy of the detection voltage. BRIEF DESCRIPTION OF THE DRAWINGS

[0042] The drawings are used to provide a further understanding of the embodiments of the present invention, and constitute a part of the specification. Together with the following specific embodiments, they are used to explain the embodiments of the present invention, but do not constitute a limitation to the embodiments of the present invention. In the drawings:

[0043] Figure 1 It is a schematic diagram of a high-speed high-power radio frequency electronic switch and detection component according to an embodiment of the present invention.

[0044] Description of the Reference Numerals

[0045] U1, MCU Controller; U2, Switch Logic Control Circuit

[0046] U3, DC-DC Boost Converter; U4, PIN Diode Driver Circuit

[0047] U5, PIN Diode SDPT Switch; U6, Forward Power Detection

[0048] U7, Reverse Power Detection; U8, Directional Coupler

[0049] C1, First Capacitor; C2, Second Capacitor

[0050] C3, Third Capacitor Detailed Embodiment

[0051] The following describes in detail the specific embodiments of the embodiments of the present invention with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are only for the purpose of illustration and explanation of the embodiments of the present invention, and are not used to limit the embodiments of the present invention.

[0052] In the embodiments of the present invention, unless otherwise stated, the orientation terms such as "upper, lower, top, bottom" are generally used in the directions shown in the drawings or for the mutual positional relationship description of each component in the vertical, perpendicular or gravitational directions.

[0053] In addition, if there are descriptions involving "first", "second", etc. in the embodiments of the present invention, such descriptions of "first", "second", etc. are only for descriptive purposes and should not be understood as indicating or implying their relative importance or implicitly indicating the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include at least one such feature. In addition, the technical solutions between the various embodiments can be combined with each other, but it must be based on the fact that those skilled in the art can implement them. When the combination of technical solutions results in contradictions or cannot be implemented, it should be considered that such a combination of technical solutions does not exist and is not within the protection scope required by the present invention.

[0054] As Figure 1The figure shows a schematic diagram of a high-speed high-power radio frequency electronic switch and a detection component according to an embodiment of the present invention. The radio frequency electronic switch and the detection component include an MCU controller U1, a driving circuit, four groups of bias circuits, a switching module, a first radio frequency connection module, a second radio frequency connection module, a third radio frequency connection module, and a power detection module. Specifically, the control end of the driving circuit is connected to the MCU control module, the input ends of the four groups of bias circuits are connected to the output end of the driving circuit, and are used for biasing and outputting the DC voltage output by the driving circuit. The output ends of the four groups of bias circuits are respectively connected to the first end, the second end, the third end, and the fourth end of the switching module. One end of the first radio frequency connection module is connected to the first end of the switching module, one end of the second radio frequency connection module is connected to the second end of the switching module, one end of the third radio frequency connection module is connected to the third end of the switching module. The four groups of bias circuits are used to cooperate with the switching module to conduct the first radio frequency connection module and the third radio frequency connection module or the second radio frequency connection module and the third radio frequency connection module. One end of the power detection module is connected to the third radio frequency connection module, and the other end is connected to the MCU control module, and is used for detecting the radio frequency power. The present invention can effectively solve the application requirements of high-speed high-power radio frequency switches and radio frequency power detection, improve the speed of the switch, effectively improve the passing power of radio frequency continuous waves and radio frequency pulses, and improve the accuracy of the detection voltage.

[0055] In this embodiment, as Figure 1 shown, the MCU control module includes an MCU controller U1 and a switch logic control circuit U2. One end of the switch logic control circuit U2 is connected to the output end of the MCU controller U1. The MCU controller U1 outputs high and low levels to control the switch logic circuit. The driving circuit includes a PIN diode driving circuit U4 and a DC-DC boost converter U3. One end of the PIN diode driving circuit U4 is connected to the output end of the switch logic control circuit U2. One end of the DC-DC boost converter U3 is connected to the other end of the PIN diode driving circuit U4. The DC-DC boost converter U3 is used to complete the conversion function from low-current voltage to high-current voltage, and the output high DC voltage is adjustable, and is used to provide DC high-voltage power supply for the PIN diode driving circuit U4. The MCU controller U1, the switch logic control circuit U2, the PIN diode driving circuit U4, and the DC-DC boost converter U3 constitute a logic control and power supply circuit for the switching module. The DC-DC boost converter U3 and the PIN diode driving circuit U4 constitute a DC high-voltage power supply circuit.

[0056] In this embodiment, the four groups of bias circuits include bias circuit A, bias circuit B, bias circuit C, and bias circuit D. Specifically, the input end of bias circuit A is connected to the output end of the PIN diode drive circuit U4, the input end of bias circuit B is connected to the output end of the PIN diode drive circuit U4, the input end of bias circuit C is connected to the output end of the PIN diode drive circuit U4, and the input end of bias circuit D is connected to the output end of the PIN diode drive circuit U4.

[0057] In this embodiment, the switch module includes a PIN diode SDPT switch U5. The first end of the PIN diode SDPT switch U5 is connected to the output end of bias circuit A, the second end of the PIN diode SDPT switch U5 is connected to the output end of bias circuit B, the third end of the PIN diode SDPT switch U5 is connected to the output end of bias circuit C, and the fourth end of the PIN diode SDPT switch U5 is connected to the output end of bias circuit D. By connecting the output end of the PIN diode drive circuit U4 to bias circuit A, bias circuit B, bias circuit C, and bias circuit D respectively, a DC bias voltage and a radio frequency choke function circuit required for the radio frequency physical channel of the single-pole double-throw switch of the PIN diode SDPT switch U5 are formed. By adjusting the relevant parameters of bias circuit A, bias circuit B, bias circuit C, and bias circuit D, the operating frequency of the component is adapted.

[0058] In this embodiment, the first radio frequency connection module includes a first capacitor C1 and a radio frequency connector A. One end of the first capacitor C1 is connected to the first end of the PIN diode SDPT switch U5, and one end of the radio frequency connector A is connected to the other end of the first capacitor C1. The second radio frequency connection module includes a second capacitor C2 and a radio frequency connector B. One end of the second capacitor C2 is connected to the second end of the PIN diode SDPT switch U5, and one end of the radio frequency connector B is connected to the other end of the second capacitor C2. The third radio frequency connection module includes a third capacitor C3, a directional coupler U8, and a radio frequency connector C. One end of the third capacitor C3 is connected to the third end of the PIN diode SDPT switch U5, one end of the directional coupler U8 is connected to the other end of the third capacitor C3, and one end of the radio frequency connector C is connected to the other end of the directional coupler U8, where the directional coupler U8 can be of strip type, waveguide type or coaxial type. The radio frequency connector A, the first capacitor C1, the radio frequency connector C, the PIN diode SDPT switch U5, the third capacitor C3, and the directional coupler U8 are connected in sequence. The switches at both ends 1 and 3 of the PIN diode SDPT switch U5 are turned on to form a radio frequency transmission channel from the radio frequency connector A to the radio frequency connector C. The radio frequency connector B, the second capacitor C2, the radio frequency connector C, the PIN diode SDPT switch U5, the third capacitor C3, and the directional coupler U8 are connected in sequence. The switches at both ends 2 and 3 of the PIN diode SDPT switch U5 are turned on to form a radio frequency transmission channel from the radio frequency connector B to the radio frequency connector C. The MCU controller U1 controls the switch logic circuit to realize the DC high-voltage bias output of the PIN diode drive circuit U4 that supplies high voltage to the DC-DC boost converter U3, and provides different voltages for the bias circuit A, the bias circuit B, the bias circuit C, and the bias circuit D respectively, so as to realize the conduction or closing of the radio frequency physical channels of the PIN diode SDPT switch.

[0059] In this embodiment, the power detection module includes a PI attenuator A, a PI attenuator B, a forward power detector U6, and a reverse power detector U7. One end of the PI attenuator A is connected to the f terminal of the directional coupler U8, and one end of the PI attenuator B is connected to the r terminal of the directional coupler U8. One end of the forward power detector U6 is connected to the output terminal of the PI attenuator A, and the other end is connected to the MCU controller U1. One end of the reverse power detector U7 is connected to the output terminal of the PI attenuator B, and the other end is connected to the MCU controller U1. The forward power detector U6 is used to detect the output power of the RF connector C, and the reverse power detector is used to detect the reflected power of the RF connector C. The f port of the directional coupler U8, the PI attenuator A, the forward power detector U6, and the MCU controller U1 are connected in sequence to form the forward power detector U6 circuit. The r port of the directional coupler U8, the PI attenuator B, the reverse power detector U7, and the MCU controller U1 are connected in sequence to form the reverse power detector U7 circuit. The MCU controller U1 is used to receive the detection voltage Vf of the forward power detector U6 and the detection voltage Vr of the reverse power detector U7. The power detection function is to couple the forward and reverse RF signal powers in the RF channel through the directional coupler U8. After the forward and reverse signal powers are attenuated by the PI attenuator A and the PI attenuator B respectively, the power-to-analog voltage conversion is completed by the forward power detector U6 and the reverse power detector U7 respectively, and the analog voltage is output to the MCU controller U1 for processing to achieve.

[0060] Through the above technical solutions, the purpose of the present invention is to provide a high-speed high-power RF electronic switch and detection component. The RF physical channels of the switch module are turned on or off through the MCU control module, the drive circuit, and four groups of bias circuits. The power and frequency passed by the switch module are adjusted through the first capacitor C1, the second capacitor C2, and the third capacitor C3, and the power detection module realizes the conversion of power to analog voltage. The present invention can effectively solve the application requirements of high-speed high-power RF switches and RF power detection, improve the speed of the switch, effectively improve the passing power of RF continuous waves and RF pulses, and improve the accuracy of the detection voltage.

[0061] The preferred embodiments of the present invention have been described in detail above with reference to the accompanying drawings. However, the present invention is not limited thereto. Within the technical concept scope of the present invention, various simple modifications can be made to the technical solutions of the present invention. Including any suitable combination of each specific technical feature, in order to avoid unnecessary repetition, the present invention will not separately describe various possible combination methods. But these simple modifications and combinations should also be regarded as the content disclosed by the present invention and all fall within the protection scope of the present invention.

Claims

1. A high-speed high-power radio frequency electronic switch and a detection component, characterized in that, The radio frequency electronic switch and detection component include: MCU control module; Driver circuit, the control end of which is connected to the MCU control module; Four groups of bias circuits, the input ends of which are connected to the output end of the driver circuit and are used for bias output of the DC voltage output by the driver circuit; Switch module, the output ends of the four groups of bias circuits are respectively connected to the first end, the second end, the third end and the fourth end of the switch module; First radio frequency connection module, one end of which is connected to the first end of the switch module; Second radio frequency connection module, one end of which is connected to the second end of the switch module; Third radio frequency connection module, one end of which is connected to the third end of the switch module, and the four groups of bias circuits are used to cooperate with the switch module to conduct the first radio frequency connection module and the third radio frequency connection module or the second radio frequency connection module and the third radio frequency connection module; Power detection module, one end of which is connected to the third radio frequency connection module and the other end of which is connected to the MCU control module, and is used for detecting radio frequency power.

2. The radio frequency electronic switch and detection component according to claim 1, characterized in that The MCU control module includes: MCU controller; Switch logic control circuit, one end of which is connected to the output end of the MCU controller.

3. The radio frequency electronic switch and the detection component according to claim 2, characterized in that, The driver circuit includes: PIN diode driver circuit, one end of which is connected to the output end of the switch logic control circuit; DC-DC boost converter, one end of which is connected to the other end of the PIN diode driver circuit.

4. The radio frequency electronic switch and the detection component according to claim 3, characterized in that, The four groups of bias circuits include: Bias circuit A, the input end of which is connected to the output end of the PIN diode driver circuit; Bias circuit B, the input end of which is connected to the output end of the PIN diode driver circuit; Bias circuit C, the input end of which is connected to the output end of the PIN diode driver circuit; Bias circuit D, the input end of which is connected to the output end of the PIN diode driver circuit.

5. The radio frequency electronic switch and detection component according to claim 4, characterized in that, The switch module includes: PIN diode SDPT switch, the first end of the PIN diode SDPT switch is connected to the output end of the bias circuit A, the second end of the PIN diode SDPT switch is connected to the output end of the bias circuit B, the third end of the PIN diode SDPT switch is connected to the output end of the bias circuit C, and the fourth end of the PIN diode SDPT switch is connected to the output end of the bias circuit D.

6. The radio frequency electronic switch and detection component according to claim 5, characterized in that, The first radio frequency connection module includes: First capacitor, one end of which is connected to the first end of the PIN diode SDPT switch; Radio frequency connector A, one end of which is connected to the other end of the first capacitor.

7. The radio frequency electronic switch and detection component according to claim 5, characterized in that The second radio frequency connection module includes: Second capacitor, one end of which is connected to the second end of the PIN diode SDPT switch; Radio frequency connector B, one end of which is connected to the other end of the second capacitor.

8. The radio frequency electronic switch and the detection component according to claim 5, characterized in that, The third radio frequency connection module includes: Third capacitor, one end of which is connected to the third end of the PIN diode SDPT switch; Directional coupler, one end of which is connected to the other end of the third capacitor; Radio frequency connector C, one end of which is connected to the other end of the directional coupler.

9. The radio frequency electronic switch and detection component according to claim 8, characterized in that, The power detection module includes: PI attenuator A, one end of which is connected to the f end of the directional coupler; The PI attenuator B has one end connected to the r end of the directional coupler; The forward power detector has one end connected to the output end of the PI attenuator A and the other end connected to the MCU controller; The reverse power detector has one end connected to the output end of the PI attenuator B and the other end connected to the MCU controller.

Images