Circuit substrate, packaging structure, electronic equipment and data transceiving device

Abstract

The embodiment of the invention provides a circuit substrate, a packaging structure, electronic equipment and a data transceiving device, belongs to the technical field of signal transmission, and is used for improving the isolation degree of a device under the condition that the integration degree meets the design requirement. In the circuit substrate, a first EBG structure is located between a first transmission line and a second transmission line, the first EBG structure comprises a plurality of first periodic structures arranged in an array, and each first periodic structure comprises a first conductive column. The first SWS structure is located between the first transmission line and the second transmission line, and the first SWS structure comprises a plurality of first metal patches which are arranged at intervals in the extension direction of the first transmission line. The first EBG structure can restrain crosstalk between the first transmission line and the second transmission line in the direction that the first transmission line points to the second transmission line or the second transmission line points to the first transmission line. In the extension direction of the first transmission line, the first SWS structure can suppress crosstalk between the first transmission line and the second transmission line.

Description

Technical Field

[0001] The present application relates to the technical field of signal transmission, and in particular, to a circuit board, a packaging structure, an electronic device, and a data transceiver device. Background Art

[0002] With the development of modern communication technologies, users have increasingly higher requirements for the communication quality and integration level of communication devices. In devices that communicate using microwaves and millimeter waves, the higher the isolation degree between different signal links, the better the communication quality. Generally, the above-mentioned isolation degree is proportional to the distance between different signal links. Therefore, in order to obtain high communication quality, it is necessary to increase the spacing between different signal links. However, this will lead to a decrease in the integration level of the device, thereby increasing the manufacturing cost of the device. Summary of the Invention

[0003] The present application provides a circuit board, a packaging structure, an electronic device, and a data transceiver device, which are used to improve the isolation degree of a device while the integration level meets the design requirements.

[0004] To achieve the above object, the present application adopts the following technical solutions:

[0005] On the one hand, the present application provides a circuit board, which includes a first dielectric layer, a ground layer, a first transmission line, a second transmission line, a first EBG structure, and at least one first SWS structure. The first dielectric layer has a first surface and a second surface that are oppositely arranged. The ground layer can be disposed on the first surface, and both the first transmission line and the second transmission line are disposed on the second surface. In addition, the first EBG structure is located between the first transmission line and the second transmission line. The first EBG structure includes a plurality of first periodic structures arranged in an array, and the first periodic structure includes a first conductive column. The first conductive column penetrates the first dielectric layer, and the first conductive column is electrically connected to the ground layer. In addition, the first SWS structure is located between the first transmission line and the second transmission line. The first SWS structure includes a plurality of first metal patches arranged at intervals along the extending direction of the first transmission line, and the first metal patches are disposed on the second surface.

[0006] In this case, since the first EBG structure includes a plurality of first periodic structures, the first conductive posts in the first periodic structure can form an inductor. By adjusting the size of the first conductive posts, the equivalent inductance of the first EBG structure can be changed, and further the frequency of the first EBG structure can be changed so that the first EBG structure exhibits high impedance characteristics. Thus, in the horizontal direction, for example, in the direction where the first transmission line points to the second transmission line, the above-mentioned first EBG structure can suppress the electromagnetic wave on the first transmission line from being transmitted to the second transmission line through the first EBG structure. Similarly, in the horizontal direction, for example, in the direction where the second transmission line points to the first transmission line, the above-mentioned first EBG structure can prevent the electromagnetic wave on the second transmission line from being transmitted to the first transmission line through the first EBG structure. Thus, in the above-mentioned horizontal direction, the signal crosstalk between the first transmission line and the second transmission line can be suppressed. In addition, the above-mentioned first SWS structure can change the propagation speed of the electromagnetic wave. Since the first SWS structure is a periodic structure along the vertical direction, for example, the extending direction of the first transmission line, the signals on the first transmission line and the second transmission line can be suppressed from propagating along the vertical direction. In this way, under the action of the above-mentioned first EBG structure and the first SWS structure, the probability of mutual crosstalk between the first transmission line and the second transmission line in the plane where the first dielectric layer is located can be reduced. Thus, the distance between the transmission lines can be reduced to achieve the purpose of improving the isolation degree of the circuit board on the premise of meeting the requirements of integration degree.

[0007] In an alternative embodiment, the circuit board includes two adjacent first SWS structures, and the first EBG structure is located between the two adjacent first SWS structures. In this way, the above-mentioned first SWS structures are provided between the first transmission line and the first EBG structure, and between the second transmission line and the first EBG structure, so that the energy leakage from the first transmission line to the second transmission line can be suppressed along the extending direction of the first transmission line, and the energy leakage from the second transmission line to the first transmission line can also be suppressed, which is beneficial to further improving the isolation degree between the first transmission line and the second transmission line.

[0008] In an alternative embodiment, the first SWS structure further includes a first metal strip. The first metal strip is disposed on the second surface along the extending direction of the first transmission line. The first metal strip is located on the side of the first metal patch away from the first EBG structure, and the first metal strip is connected to the first metal patch. In this case, a metal layer can be formed on the second surface of the first dielectric layer, and then the metal layer can be etched to form the first metal patch and the first metal strip which are arranged in the same layer and connected as an integral structure, so as to achieve the purpose of simplifying the process.

[0009] In an alternative embodiment, the first metal strip is connected to the first transmission line or the second transmission line. In this way, the first metal strip can be used as part of the first transmission line or the second transmission line to transmit electromagnetic waves. In addition, the first transmission line or the second transmission line can also be used as part of the first metal strip to connect to the plurality of first metal patches. On this basis, since both the first transmission line and the second transmission line are disposed on the second surface. Therefore, a metal layer can be formed on the second surface of the first dielectric layer, and then the metal layer can be etched to form the first metal strip and the first transmission (or the second transmission line) which are disposed in the same layer and connected as an integral structure, so as to achieve the purpose of simplifying the process.

[0010] In an alternative embodiment, the first SWS structure is insulated from the ground layer, so that by etching the metal layer on the first dielectric layer in the circuit substrate, the first SWS structure can be formed, achieving the purpose of simplifying the manufacturing process. Alternatively, in some other embodiments of the present application, the first metal patch (or the first metal) in the first SWS structure can also be electrically connected to the ground layer by providing a via hole in the first dielectric layer.

[0011] In an alternative embodiment, the first periodic structure further includes a second metal patch, the second metal patch is located on the second surface, and one end of the first conductive post facing away from the ground layer is electrically connected to the second metal patch. In this way, the plurality of second metal patches in the first EBG structure can be equivalent to capacitors. By adjusting the size (for example, the side length) of the second metal patch, the equivalent inductance of the first EBG junction can be changed, and further the frequency of the first EBG structure can be changed.

[0012] In an alternative embodiment, the first periodic structure further includes a second metal patch, the second metal patch is located on the second surface, and one end of the first conductive post facing away from the ground layer is electrically connected to the second metal patch. In addition, the circuit substrate includes a plurality of first SWS structures. The first periodic structure is located between two adjacent first SWS structures, and the second metal patch is connected to the first metal patches of the two adjacent first SWS structures. In this way, the first SWS structures are provided on both sides of each second metal patch, which is beneficial to improving the suppression effect of the first EBG structure and the first SWS structure on the energy leakage between the first transmission line and the second transmission line.

[0013] In an alternative embodiment, the circuit substrate further includes a second EBG structure and a second SWS structure. Among them, the first transmission line is located between the first EBG structure and the second EBG structure. The second EBG structure includes a plurality of second periodic structures arranged in an array. The second periodic structure includes a third metal patch and a second conductive post. The third metal patch is located on the second surface. The second conductive post penetrates the first dielectric layer, and both ends of the second conductive post are electrically connected to the third metal patch and the ground layer respectively. In this way, by arranging the second EBG structure on the side of the first transmission line away from the first EBG structure, the energy from the first transmission line can be suppressed from leaking in the direction of the second EBG structure, so as to improve the signal transmission efficiency. In addition, the second SWS structure is located between the first transmission line and the second EBG structure. The second SWS structure includes a plurality of fourth metal patches arranged at intervals along the extending direction of the first transmission line. The fourth metal patches are arranged on the second surface. In this way, by arranging the second SWS structure on the side of the first transmission line away from the first EBG structure, the phenomenon that the energy from the first transmission line leaks around the edge where the second EBG structure is arranged can be suppressed, so as to improve the signal transmission efficiency.

[0014] In an alternative embodiment, the second periodic structure of the second EBG structure may only include a second conductive post. The technical effects of this second EBG structure are the same as those described above and will not be elaborated here.

[0015] In an alternative embodiment, the circuit substrate further includes a third EBG structure and a third SWS structure. Among them, the second transmission line is located between the first EBG structure and the third EBG structure. The third EBG structure includes a plurality of third periodic structures arranged in an array. The third periodic structure includes a fifth metal patch and a third conductive post. The fifth metal patch is located on the second surface. The third conductive post penetrates the first dielectric layer, and both ends of the third conductive post are electrically connected to the fifth metal patch and the ground layer respectively. The third SWS structure is located between the second transmission line and the third EBG structure; the third SWS structure includes a plurality of sixth metal patches arranged at intervals along the extending direction of the second transmission line. The sixth metal patches are arranged on the second surface. The technical effects of the above-mentioned third EBG structure and third SWS structure can be obtained by the same reasoning and will not be elaborated here.

[0016] In an alternative embodiment, the circuit substrate is a package substrate, and the first transmission line and the second transmission line are microstrip lines or radiators. The above package substrate can be applied to electronic devices for transmitting and receiving signals.

[0017] In an alternative embodiment, the first transmission line is the first radiator and the second transmission line is the second radiator. In addition, the circuit board further includes: a second dielectric layer, a third radiator, a fourth radiator, a fourth EBG structure, and a fourth SWS structure. Among them, the second dielectric layer is stacked with the first dielectric layer. The second dielectric layer has a third surface and a fourth surface arranged opposite to each other, and the grounding layer is located between the first dielectric layer and the second dielectric layer. The third radiator is disposed on the fourth surface, and the third radiator and the first radiator form a first substrate integrated waveguide. The fourth radiator is disposed on the fourth surface, and the fourth radiator and the second radiator form a second substrate integrated waveguide. The above first substrate integrated waveguide and second substrate integrated waveguide can be used as the receiving or transmitting path of electromagnetic waves. In addition, the fourth EBG structure is located between the third radiator and the fourth radiator. The fourth EBG structure includes a plurality of fourth periodic structures arranged in an array. The fourth periodic structure includes a seventh metal patch and a fourth conductive post. The seventh metal patch is located on the fourth surface, the fourth conductive post penetrates the second dielectric layer, and both ends of the fourth conductive post are electrically connected to the seventh metal patch and the grounding layer respectively. The vertical projection of a first periodic structure on the grounding layer overlaps with the vertical projection of a fourth periodic structure on the grounding layer. The fourth SWS structure is located between the third radiator and the fourth radiator. The fourth SWS structure includes a plurality of eighth metal patches arranged at intervals along the extending direction of the third radiator. The eighth metal patches are disposed on the fourth surface; the vertical projection of the fourth SWS structure on the grounding layer overlaps with the vertical projection of the first SWS structure on the grounding layer. The technical effects of the above fourth EBG structure and fourth SWS structure can be obtained by the same reasoning and will not be elaborated here.

[0018] In an alternative embodiment, the circuit board is a first printed circuit board, and the first transmission line and the second transmission line are strip lines. The above circuit board can be applied to electronic devices for transmitting electrical signals.

[0019] In an alternative embodiment, the electromagnetic waves transmitted on the first transmission line and the second transmission line have a working frequency band, and the first EBG structure has a first band-stop frequency band, and the first band-stop frequency band is the same as the working frequency band, so as to suppress the signal crosstalk between the first transmission line and the second transmission line along the horizontal direction (the direction from the first transmission line to the second transmission line, or the direction from the second transmission line to the first transmission line). The first SWS structure has a first cut-off frequency, and the first cut-off frequency is the same as the starting frequency point of the working frequency band, so as to suppress the signal crosstalk between the first transmission line and the second transmission line along the extending direction of the first transmission line.

[0020] In an alternative embodiment, the shape of the vertical projection of the second metal patch on the first dielectric layer is rectangular, circular, elliptical, triangular or polygonal, and the shape of the second metal patch is not limited in this application. In addition, the shapes of other metal patches provided in the embodiments of this application can also be set in the same manner as the shape of the second metal patch.

[0021] In an alternative embodiment, in the same first SWS structure, multiple first metal patches are strip-shaped and arranged in parallel. The multiple first metal patches arranged in parallel can simplify the pattern of the mask material or the structure of the mask plate used to fabricate the first SWS structure.

[0022] In an alternative embodiment, the first metal patch is strip-shaped. In the same first SWS structure, the lengths of at least two first metal patches in the same direction are different, and the structure of the first SWS structure can be set according to the cut-off frequency of the first SWS structure.

[0023] On the other hand, this application provides a packaging structure, including a bare chip and any one of the circuit boards described above. The circuit board is a packaging substrate, and the first transmission line and the second transmission line of the circuit board are radiators. The bare chip is disposed on the circuit board, and the bare chip is coupled to the first transmission line and the second transmission line. The above packaging structure has the same technical effects as the circuit board provided in the foregoing embodiments, and will not be elaborated here.

[0024] On the other hand, this application provides an electronic device, including a second printed circuit board and the packaging structure described above. The packaging structure is electrically connected to the second printed circuit board. The electronic device has the same technical effects as the circuit board provided in the foregoing embodiments, and will not be elaborated here.

[0025] In yet another aspect of this application, a data transceiver device is provided, including a metal transfer structure and the packaging structure described above. The first transmission line and the second transmission line in the packaging structure are radiators. The metal transfer structure is provided with an installation groove, and the packaging structure is disposed in the installation groove; the metal transfer structure is provided with a first waveguide cavity and a second waveguide cavity communicating with the installation groove; the first waveguide cavity is coupled to the first transmission line, and the second waveguide cavity is coupled to the second transmission line. The data transceiver device has the same technical effects as the circuit board provided in the foregoing embodiments, and will not be elaborated here.

[0026] In an alternative embodiment, the data transceiver device further includes a first dielectric waveguide and a second dielectric waveguide. The first dielectric waveguide is disposed in a first waveguide cavity. The first dielectric waveguide is coupled to a first transmission line through the first waveguide cavity, so that the first dielectric waveguide can be coupled to a part of the package structure in the mounting groove for transmitting or receiving signals. The second dielectric waveguide is disposed in a second waveguide cavity. The second dielectric waveguide is coupled to a second transmission line through the second waveguide cavity, so that the second dielectric waveguide can be coupled to a part of the package structure in the mounting groove for receiving or transmitting signals. Description of the Drawings

[0027] Figure 1 FIG. is a schematic structural diagram of a data center provided by an embodiment of the present application;

[0028] Figure 2 is Figure 1 a schematic structural diagram of a data transceiver device in

[0029] Figure 3 FIG. is a schematic structural diagram of a package structure provided by an embodiment of the present application;

[0030] Figure 4A is Figure 1 another schematic structural diagram of a data transceiver device in

[0031] Figure 4B is Figure 4A a schematic diagram of a metal adapter structure in

[0032] Figure 5 is Figure 1 a partial schematic structural diagram of a data transceiver device in

[0033] Figure 6 is a perspective structure diagram obtained by looking along the Figure 5 A direction in

[0034] Figure 7 is a sectional view obtained by cutting along the Figure 6 O1 - O2 in

[0035] Figure 8 is a top view structural schematic diagram obtained by looking along the Figure 7 B direction in

[0036] Figure 9A is a sectional view obtained by cutting along the Figure 6 O1 - O2 in

[0037] Figure 9B FIG. is a partial schematic structural diagram of a circuit board provided by an embodiment of the present application;

[0038] Figure 10 A top-down structural schematic diagram obtained along the Figure 9A C direction in ;

[0039] Figure 11 (a) in Figure 11 and (b) in Figure 11 and (c) in Figure 11 and (d) in are schematic diagrams of different shapes of the metal patch provided by the embodiments of the present application;

[0040] Figure 12 is the dispersion curve diagram of an EBG structure provided by the embodiments of the present application;

[0041] Figure 13 A top-down structural schematic diagram obtained along the Figure 9A C direction in ;

[0042] Figure 14 is the dispersion curve diagram of an SWS structure provided by the embodiments of the present application;

[0043] Figure 15A A top-down structural schematic diagram obtained along the Figure 9A C direction in ;

[0044] Figure 15B A top-down structural schematic diagram obtained along the Figure 9A C direction in ;

[0045] Figure 15C is the partial structural schematic diagram of a circuit board provided by the embodiments of the present application;

[0046] Figure 16 (a) in Figure 16 and (b) in are schematic diagrams of different shapes of the SWS structure provided by the embodiments of the present application;

[0047] Figure 17 A top-down structural schematic diagram obtained along the Figure 9A C direction in ;

[0048] Figure 18 is the schematic diagram of another EBG structure and SWS structure provided by the embodiments of the present application;

[0049] Figure 19A is the schematic diagram of another isolation degree and frequency curve provided by the embodiments of the present application;

[0050] Figure 19B is the schematic diagram of another insertion loss and frequency curve provided by the embodiments of the present application;

[0051] Figure 20 A top-down structural schematic diagram obtained along the Figure 5Another perspective structure diagram obtained in the A direction in;

[0052] Figure 21 is another cross-sectional view obtained by cutting along Figure 20 O3 - O4 in;

[0053] Figure 22 is a schematic diagram of another EBG structure and SWS structure provided by an embodiment of the present application;

[0054] Figure 23 is another cross-sectional view obtained by cutting along Figure 22 O5 - O6 in;

[0055] Figure 24 is another cross-sectional view obtained by cutting along Figure 5 in the A direction in;

[0056] Reference numerals:

[0057] 01 - Data center; 02 - Cabinet; 03 - Cabinet switch; 04 - Server; 05 - Aggregation switch; 10 - Data transceiver device; 101 - Connection line; 102 - Electrical connection terminal; 20 - Encapsulation structure; 200 - Second PCB; 201 - Circuit board; 202 - Bare chip; 203 - Encapsulation cover; 21 - Metal transfer structure; 1011 - First dielectric waveguide; 1012 - Second dielectric waveguide; 210 - Installation groove; 211 - First waveguide cavity; 212 - Second waveguide cavity; 221 - First transmission line; 222 - Second transmission line; 230 - First EBG structure; 231 - First conductive column; 240 - First SWS structure; 2011 - First dielectric layer; 2012 - Ground layer; 2301 - First periodic structure; 232 - Second metal patch; 241 - First metal patch; 242 - First metal strip; 250 - Second EBG structure; 2501 - Second periodic structure; 260 - Second SWS structure; 261 - Fourth metal patch; 270 - Third EBG structure; 280 - Third SWS structure; 281 - Sixth metal patch; 252 - Second conductive column; 271 - Fifth metal patch; 272 - Third conductive column; 281 - Sixth metal patch; 2210 - First radiator; 2220 - Second radiator; 2230 - Third radiator; 2240 - Fourth radiator; 290 - Fourth EBG structure; 291 - Seventh metal patch; 292 - Fourth conductive column; 310 - Fourth SWS structure; 311 - Eighth metal patch; 41 - First SIW; 42 - Second SIW. Detailed implementation manners

[0058] Next, the technical solutions in the embodiments of the present application will be described in conjunction with the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments.

[0059] Hereinafter, terms such as "first" and "second" are only for convenience of description, and cannot be understood as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, features defined with "first", "second", etc. may explicitly or implicitly include one or more of such features. In the description of the present application, unless otherwise specified, the meaning of "a plurality" is two or more.

[0060] The such limitations mentioned in the embodiments of the present application, such as parallel, perpendicular, orthogonal, the same (for example, the same length, the same width, etc.), are all in terms of the current process level, rather than a strictly absolute definition in the mathematical sense. There may be a deviation of a predetermined angle between two components that are parallel or perpendicular to each other. In one embodiment, the predetermined threshold may be less than or equal to a threshold of 1 mm. For example, the predetermined threshold may be 0.5 mm, or may be 0.1 mm. In one embodiment, the predetermined angle may be an angle within the range of ±10°, for example, the predetermined angle deviation is ±5°.

[0061] In the present application, unless otherwise clearly specified and limited, the term "connection" should be understood in a broad sense. For example, "connection" can be a fixed mechanical connection, a detachable mechanical connection, or integrated; or, "connection" can be directly connected, or indirectly connected through an intermediate medium. In addition, unless otherwise clearly specified and limited, the term "coupling" should be understood in a broad sense. For example, "coupling" can be a direct electrical connection. For example, two components are in physical contact and electrically conduct; it can also be understood that different components in a circuit structure are electrically connected through a printed circuit board (PCB) copper foil, a wire or other physical lines that can transmit electrical signals to transmit electrical signals; or, "coupling" can be an indirect electrical connection between two components through an intermediate medium; or, "coupling" can be an electrical connection between two components in an air-spaced / non-contact manner. For example, two components are electrically connected by means of capacitive coupling to transmit electrical signals.

[0062] In the embodiments of the present application, the orientation terms such as "upper", "lower", "left", "right", etc. may include but are not limited to being defined relative to the schematic placement orientation of the components in the drawings. It should be understood that these directional terms can be relative concepts, which are used for relative description and clarification, and they can change accordingly with the change of the orientation of the components in the drawings.

[0063] In the drawings of the embodiments of the present application, components are represented by guiding lines with arrows; parts are only represented by guiding lines; openings such as openings and holes are represented by guiding lines with wavy lines at the ends.

[0064] The technical solutions provided in the embodiments of the present application are applicable to electronic devices using one or more of the following communication technologies. The above communication protocols may include: Bluetooth (BT) communication technology, Global Positioning System (GPS) communication technology, Global System of Mobile Communication (GSM) communication technology, Wireless Fidelity (WiFi) communication technology, Wideband Code Division Multiple Access Wireless (WCDMA) communication technology, Long Term Evolution (LTE), 5G communication technology, and other future communication technologies.

[0065] The electronic devices in the embodiments of the present application may be mobile phones, tablets (pads), laptop computers, smart homes, smart wearable devices (such as smart watches, smart bracelets, smart glasses, smart helmets, smart earphones), virtual reality (VR) electronic devices, augmented reality (AR) electronic devices, etc. The electronic device may also be a handheld device with wireless communication function, a computing device or other processing devices connected to a wireless modem, a vehicle-mounted device, an electronic device in a 5G network, or an electronic device in a future evolved Public Land Mobile Network (PLMN).

[0066] Alternatively, the electronic devices in the embodiments of the present application may be radio frequency devices applicable to microwave, millimeter wave or terahertz bands, such as antennas in radars, base stations, multiple-input multiple-output (MIMO) antennas, and devices with data transceiver functions. The embodiments of the present application are not limited thereto. For the convenience of description below, the electronic device is taken as an example of the above device with data transceiver function.

[0067] In this case, the above electronic device may be applied to a data center in the field of communication technology. The data center generally refers to a system that realizes functions such as centralized processing, exchange, and management of data in a physical space. The above data center 01 is as Figure 1As shown, it may include multiple cabinets 02, a rack switch 03 and multiple servers 04 located within the cabinet 02. In addition, the data center 01 may further include an aggregation switch 05 located outside the cabinet 02, etc. The types of servers 04 may include file servers, database servers, application servers, web servers, etc. The main components of the server 04 may include a processor, a hard disk, a memory, a system bus, etc. Based on this, the above electronic device may be the server 04, the cabinet switch 03 or the aggregation switch 05.

[0068] Based on this, in order to enable signal communication between different servers 04, between the server 04 and the cabinet switch 03, between different cabinet switches 03, and between the cabinet switch 03 and the aggregation switch 05, the data center may further include, as Figure 2 shown, a data transceiver device 10 (for example, a cable), which is used to connect different electronic devices to achieve signal and data transmission between different electronic devices. For the sake of simplicity of the drawings, Figure 1 in the figure, the data transceiver device 10 between different servers 04 within the same cabinet 02 is not shown.

[0069] On this basis, continuing as Figure 2 shown, the data transceiver device 10 may include a connection line 101 and electrical connection terminals 102 located at both ends of the connection line 101. The two electrical connection terminals 102 may be respectively plugged into different electronic devices. The above electronic device may include a package structure 20, which may have the function of sending (transport, TX) signals or receiving (receive, RX) signals. By way of example, the above package structure 20 may be disposed within the connection structure of the electronic device. When the electrical connection terminal 102 is plugged into the connection interface of the electronic device, the electrical connection terminal 102 may be electrically connected to the above package structure 20, so that the package structures 20 in different electronic devices can achieve signal transmission through the data transceiver device 10.

[0070] In some embodiments of the present application, as Figure 3 shown, the package structure 20 may include a circuit board 201, a bare chip 202 and a package cover 203. The bare chip 202 has both signal receiving and sending functions, and the bare chip 202 is disposed on the circuit board 201 and is electrically connected to the circuit board 201. The above package cover 203 is buckled on the circuit board 201 so that the package cover 203 and the circuit board 201 can enclose a space for packaging the bare chip 202. Therefore, the above circuit board 201 may also be referred to as a package substrate.

[0071] On this basis, in order to electrically connect the encapsulation structure 20 to components in an electronic device, such as a device for data processing in a server 04, such as a processor, continue as Figure 3 shown, the electronic device, such as the server 04, may further include a second printed circuit board (PCB) 200. The encapsulation structure 20 may be electrically connected to the second PCB 200, so that the bare chip 202 in the encapsulation structure 20 can be electrically connected to the processor in the electronic device through the second PCB 200, thereby realizing data transmission between the bare chip 202 and the processor.

[0072] The above takes the example of the encapsulation structure 20 with signal transceiver function provided in an electronic device, such as the server 04. In some other embodiments of the present application, the above encapsulation structure 20 may also be provided in the data transceiver device 10 for electrically connecting different electronic devices. By way of example, Figure 2 the electrical connection terminals 102 in may include Figure 4A as shown, a metal adapter structure 21 and the above encapsulation structure 20 with signal transceiver function.

[0073] Based on this, as Figure 4B shown, the metal adapter structure 21 may be provided with an installation groove 210, and the encapsulation structure 20 (as Figure 4A shown) may be disposed in the installation groove 210. In some embodiments, the electronic device, such as the server 04, may have a data interface. The encapsulation structure 20 and the metal adapter structure 21 in the above electrical connection terminals 102 may be installed in the data interface. The encapsulation structure 20 may be electrically connected to the components for data processing in the above electronic device. The connection line 101 may be plugged into the metal adapter structures 21 in different electronic devices, so that different electronic devices are electrically connected through the data transceiver device 10.

[0074] Alternatively, in some other embodiments, the electrical connection terminals 102 at both ends of the connection line 101 may be plugged into the data interfaces of different electronic devices, such as the server 04, so that the encapsulation structures 20 in different electrical connection terminals 102 can be electrically connected to the components for data processing in the plugged electronic devices, and further different electronic devices are electrically connected through the data transceiver device 10.

[0075] On this basis, as Figure 4A shown, the above connection line 101 may include a first dielectric waveguide 1011 and a second dielectric waveguide 1012. By way of example, the first dielectric waveguide 1011 and the second dielectric waveguide 1012 may be plastic fibers or metal traces. Based on this, in order to make Figure 4AThe encapsulation structures 20 at both ends of the intermediate connection line 101 can be coupled through the first dielectric waveguide 1011 and the second dielectric waveguide 1012, as Figure 4B shown, the metal adapter structure 21 is provided with a first waveguide cavity 211 and a second waveguide cavity 212 that communicate with the mounting groove 210.

[0076] Among them, the first dielectric waveguide 1011 (as Figure 4A shown) can be disposed in the first waveguide cavity 211, so that the first dielectric waveguide 1011 can be coupled to the part of the encapsulation structure 20 (as Figure 4A shown) located in the mounting groove 210 for transmitting signals or receiving signals. Similarly, the second dielectric waveguide 1012 (as Figure 4A shown) can be disposed in the second waveguide cavity 212, so that the second dielectric waveguide 1012 can be coupled to the part of the encapsulation structure 20 (as Figure 4A shown) located in the mounting groove 210 for receiving signals or transmitting signals. As can be seen from the above, the encapsulation structure 20 may include a circuit board 201 and a bare chip 202 having a signal transceiver function. Therefore, the bare chip 202 can be coupled to the above-mentioned first waveguide cavity 211 and second waveguide cavity 212 (as Figure 4B shown) through the circuit board 201.

[0077] The embodiments of the present application do not limit the shapes of the first waveguide cavity 211 and the second waveguide cavity 212. When the first dielectric waveguide 1011 and the second dielectric waveguide 1012 are cylinders, the orifice shapes of the above-mentioned first waveguide cavity 211 and second waveguide cavity 212 can be circular. Alternatively, when the first dielectric waveguide 1011 and the second dielectric waveguide 1012 are cubes, the orifice shapes of the above-mentioned first waveguide cavity 211 and second waveguide cavity 212 can be rectangular.

[0078] In this case, as Figure 5 shown, the above-mentioned metal adapter structure 21 can not only couple the first dielectric waveguide 1011 and the second dielectric waveguide 1012 to the encapsulation structure 20 through the first waveguide cavity 211 and the second waveguide cavity 212 respectively. In addition, the metal adapter structure 21 can also fix the first dielectric waveguide 1011 and the second dielectric waveguide 1012 through the first waveguide cavity 211 and the second waveguide cavity 212. Therefore, the metal adapter structure 21 can be called a waveguide fixture.

[0079] Among them, for the convenience of description below, in Figure 5An XYZ coordinate system is added, where the X direction is the extending direction of the first dielectric waveguide 1011 and the second dielectric waveguide 1012. The Y direction can be the direction in which the first waveguide cavity 211 and the second waveguide cavity 212 are arranged side by side, and this Y direction can be set to intersect with the X direction (for example, perpendicular or intersecting at a non-90° angle). The XY plane can be parallel to the plate surface of the circuit board 201 in the packaging structure 20 (as Figure 3 shown). In addition, the Z direction is perpendicular to the XY plane, and the Z direction can be the stacking direction of the circuit board 201 and the bare chip 202 in the packaging structure 20 (as Figure 3 shown).

[0080] As can be seen from the above, the packaging structure 20 with signal transceiver function provided by the embodiments of the present application can be arranged in an electronic device, such as Figure 1 the server 04, the cabinet switch 03 or the aggregation switch 05 in Figure 2 shown, or the above packaging structure 20 can be arranged in Figure 2 the data transceiver device 10 (for example, a cable) shown in

[0081] the present application does not make a limitation on this. For the convenience of description below, all examples are given by taking the packaging structure 20 arranged in Figure 6 (the perspective structure diagram of the top view obtained along the Figure 5 A direction in

[0082] shown) as an example. Figure 7 (along Figure 6As shown in the cross-sectional view obtained by cutting along the dotted line O1-O2 in the figure, the circuit substrate 201 may include a first dielectric layer 2011, a ground layer 2012, a first transmission line 221, a second transmission line 222, a first electromagnetic band gap (EBG) structure 230 and at least one first slow wave structure (SWS) 240.

[0083] Among them, continue as Figure 7 As shown, the first dielectric layer 2011 has a first surface a1 and a second surface a2 arranged opposite to each other. The ground layer 2012 is arranged on the first surface a1. The first transmission line 221 and the second transmission line 222 are arranged on the second surface a2. In an exemplary embodiment, the circuit substrate 201 is the above-mentioned packaging substrate, and Figure 6 In the case where the bare chip 202 shown has a signal transceiver function, the first transmission line 221 and the second transmission line 222 can be microstrip lines or radiators for transmitting electromagnetic waves. The microstrip line is a strip conductor (or signal line) with a dielectric between the microstrip line and the ground plane.

[0084] For the convenience of explanation, the following description is made by taking the first transmission line 221 and the second transmission line 222 as radiators, for example, the first transmission line 221 may be a first radiator for sending signals, and the second transmission line 222 may be a second radiator for receiving signals. For example, the transmission direction of the electromagnetic waves radiated by the first transmission line 221 and the second transmission line 222 may be parallel to the board surface of the circuit substrate 201. Figure 7 In the figure, only the positions of the first transmission line 221 and the second transmission line 222 as radiators are shown, and the shapes and structures of the first transmission line 221 and the second transmission line 222 are not limited.

[0085] Based on this, the two ends of the first transmission line 221 can be respectively connected to Figure 6 The first waveguide cavity 211 and the bare chip 202 are coupled to each other so that the first transmission line 221 can transmit the radio frequency signal from the bare chip 202 to the first waveguide cavity 211. Similarly, the two ends of the second transmission line 222 can be connected to Figure 6 The second waveguide cavity 212 and the bare chip 202 are coupled to each other so that the second transmission line 222 can receive the radio frequency signal from the second waveguide cavity 212 and transmit it to the bare chip 202 .

[0086] On this basis, in order to avoid the mutual crosstalk between the signal on the first transmission line 221 and the signal on the second transmission line 222, continue as follows Figure 7 As shown, the first EBG structure 230 is located between the first transmission line 221 and the second transmission line 222. For example,Figure 8 (along Figure 7 As shown in the top view obtained by the B direction in FIG. 1 , the first EBG structure 230 may include a plurality of first periodic structures 2301 arranged in an array.

[0087] In some embodiments of the present application, the first periodic structure 2301 may include: Figure 7 The first conductive pillar 231 shown in the figure penetrates the first dielectric layer 2011, and the first conductive pillar 231 is electrically connected to the ground layer 2012. In this case, the first conductive pillar 231 in the first periodic structure 2301 of the first EBG structure 230 can constitute an inductor. By adjusting the size (e.g., diameter) of the first conductive pillar 231, the equivalent inductance of the first EBG structure 230 can be changed, and the frequency of the first EBG structure 230 can be further changed.

[0088] For example, when the diameter of the first conductive pillar 231 increases, the frequency of the first EBG structure 230 can be reduced. Conversely, when the diameter of the first conductive pillar 231 is reduced, the frequency of the first EBG structure 230 can be increased. Alternatively, the distance between two adjacent first conductive pillars 231 in the first EBG structure 230 can also be adjusted. The larger the distance, the lower the frequency of the first EBG structure 230. Conversely, the smaller the distance, the higher the frequency of the first EBG structure 230.

[0089] Or, in other embodiments of the present application, Figure 9A As shown, the first periodic structure 2301 may further include a second metal patch 232, the second metal patch 232 may be located on the second surface a2, and one end of the first conductive column 231 away from the ground layer 2012 is electrically connected to the second metal patch 232. Figure 9B As shown, in the first periodic structure 2301 , two ends of the first conductive column 231 may be electrically connected to the second metal patch 232 and the ground layer 2012 , respectively, so that the second metal patch 232 may be grounded to the ground layer 2012 through the first conductive column 231 .

[0090] In this case, the plurality of second metal patches 232 in the first EBG structure 230 may be equivalent to capacitors. By adjusting the size (eg, side length) of the second metal patches 232 , the equivalent inductance of the first EBG structure 230 may be changed, and the frequency of the first EBG structure 230 may be further changed.

[0091] For example, when the side length of the second metal patch 232 increases, the frequency of the first EBG structure 230 can decrease. Conversely, when the side length of the second metal patch 232 decreases, the frequency of the first EBG structure 230 can increase. Alternatively, the spacing between two adjacent second metal patches 232 in the first EBG structure 230 can also be adjusted. Similarly, the larger the above spacing, the lower the frequency of the first EBG structure 230. Conversely, the smaller the above spacing, the higher the frequency of the first EBG structure 230.

[0092] Based on this, the shape of the vertical projection of the second metal patch 232 on the first dielectric layer 2011 (as Figure 9A shown) can be a rectangle as shown in the top view obtained along the C direction in Figure 10 . Or, in some other embodiments of the present application, the shape of the vertical projection of the second metal patch 232 on the first dielectric layer 2011 (as Figure 9A shown) can be a circle as shown in (a) of Figure 9A , or an ellipse as shown in (b) of Figure 11 , or a triangle as shown in (c) of Figure 11 , or a polygon (e.g., a pentagon or a rhombus) as shown in (d) of Figure 11 , and the present application does not limit this. Figure 11

[0093] Based on this, by adjusting the frequency of the first EBG structure 230, the first EBG structure 230 can exhibit high impedance characteristics within a certain frequency range, so as to prevent electromagnetic waves within this frequency range from passing through the first EBG structure. For example, the electromagnetic waves transmitted on the first transmission line 221 and the second transmission line 222 can have an operating frequency band (e.g., 97 - 181 GHz). As Figure 12 shown, it can be seen from the dispersion curve of the first EBG structure 230 that the first EBG structure 230 can have a first band-stop frequency band (e.g., 97.502 - 181.98 GHz). There are no electromagnetic waves within this first band-stop frequency band (e.g., 97.502 - 181.98 GHz), and curves of different modes of electromagnetic waves are distributed outside this first band-stop frequency band. Therefore, it can be seen that the first band-stop frequency band (e.g., 7.502 - 181.98 GHz) can be the same as the operating frequency band (e.g., 97 - 181 GHz).

[0094] Among them, the fact that the above first band-stop frequency band is the same as the operating frequency band means that the starting frequency point (97.502 GHz) of the first band-stop frequency band and the starting frequency point (97 GHz) of the operating frequency band can be the same within a precision control range, and the ending frequency point (181.98 GHz) of the first band-stop frequency band and the ending frequency point (181 GHz) of the operating frequency band can be the same within a precision control range. This application does not limit the above precision control range.

[0095] Based on this, as can be seen from the above, the first EBG structure 230 can prevent electromagnetic waves within the first band-stop frequency band (for example, 7.502 - 181.98 GHz) from passing through the first EBG structure. Therefore, when the operating frequency band (for example, 97 - 181 GHz) of the electromagnetic waves transmitted on the first transmission line 221 and the second transmission line 222 is the same as the first band-stop frequency band (for example, 7.502 - 181.98 GHz), along Figure 10 the indicated Y direction (the direction pointing from the first transmission line 221 to the second transmission line 222, or from the second transmission line 222 to the first transmission line 221, that is, the horizontal direction), the energy of the electromagnetic waves on the first transmission line 221 (indicated by the black arrows in the figure) can be suppressed from passing through the first EBG structure 230 and leaking to the second transmission line 222. Similarly, the energy of the electromagnetic waves on the second transmission line 222 can be suppressed from passing through the first EBG structure 230 and leaking to the first transmission line 221.

[0096] In this way, the above first EBG structure 230 can suppress the mutual leakage of energy between the first transmission line 221 and the second transmission line 222 in the Y direction (that is, the horizontal direction), thereby reducing the coupling between the first transmission line 221 and the second transmission line 222 along the Y direction, achieving the purpose of suppressing the signal crosstalk between the first transmission line 221 and the second transmission line 222 along the Y direction and improving the isolation degree between the first transmission line 221 and the second transmission line 222. Among them, Figure 10 and in the following figures, the first transmission line 221 and the second transmission line 222 are represented by rectangular frames, which are only used to show the positions of the first transmission line 221 and the second transmission line 222 and their connection relationships with other components, and do not constitute a limitation on the structures of the first transmission line 221 and the second transmission line 222.

[0097] Exemplarily, in order to enable the first EBG structure 230 to effectively suppress the signal crosstalk between the first transmission line 221 and the second transmission line 222 in the Y direction, the vertical projections of the first transmission line 221 and the second transmission line 222 on the first EBG structure 230 are respectively located within the region where the first EBG structure 230 is located. In this way, the ends of the first EBG structure 230 in the Y direction can extend beyond the ends of the first transmission line 221 and the second transmission line 222, or be flush with the ends of the first transmission line 221 and the second transmission line 222, thereby preventing energy from leaking from the edge of the first EBG structure 230 between the first transmission line 221 and the second transmission line 222 in the Y direction.

[0098] On this basis, continuing as Figure 10 shown, since the energy on the first transmission line 221 (or the second transmission line 222) cannot pass through the first EBG structure in the Y direction, in order to prevent the above-mentioned energy from transmitting around the edge of the first EBG structure 230 and around the opposite side where the first EBG structure 230 is provided, thereby causing interference to the second transmission line 222 (or the first transmission line 221), a first SWS structure 240 as Figure 13 shown is also provided in the circuit board 201, and the first SWS structure 240 can be located between the first transmission line 221 and the second transmission line 222.

[0099] Among them, Figure 13 taking the example that the circuit board 201 includes a first SWS structure 240 and the first SWS structure 240 is provided between the first transmission line 221 and the first EBG structure 230 for illustration. In some other embodiments of the present application, when the circuit board 201 includes a first SWS structure 240, the first SWS structure 240 can be located between the second transmission line 222 and the first EBG structure 230.

[0100] Continuing as Figure 13 shown, the first SWS structure 240 can include a plurality of first metal patches 241 arranged at intervals along the extension direction of the first transmission line 221 (i.e., the X direction), and the first metal patches 241 can be provided on Figure 9A the second surface a2 of the first dielectric layer 2011 as shown. As described above, the second metal patches 232, the first transmission line 221, and the second transmission line 222 in the first EBG structure 230 are all provided on the second surface a2. Therefore, a metal layer can be formed on the second surface a2 of the first dielectric layer 2011, and then the metal layer can be etched to form the first metal patches 241, the second metal patches 232, the first transmission line 221, and the second transmission line 222 provided on the same layer.

[0101] In this case, since the first SWS structure 240 has a periodic structure along the extending direction of the first transmission line 221 (i.e., the X direction), that is, the first metal patch 241, the above-mentioned first SWS structure 240 can change the propagation speed of the electromagnetic wave along the arrangement direction of the plurality of first metal patches 241 (i.e., the X direction), so that the first SWS structure 240 has a cut-off frequency, thereby being able to suppress the propagation of electromagnetic waves above the cut-off frequency along the X direction.

[0102] Based on this, when the cut-off frequency of the first SWS structure 240 is the same as the frequency of the electromagnetic waves on the first transmission line 221 and the second transmission line 222, the propagation of the electromagnetic waves on the first transmission line 221 and the second transmission line 222 along the X direction can be suppressed. For example, when the electromagnetic waves transmitted on the first transmission line 221 and the second transmission line 222 have a working frequency band (for example, 97 - 181 GHz), as Figure 14 shown, it can be known from the dispersion curve of the first SWS structure 240 that the first SWS structure 240 can have a first cut-off frequency (for example, 97 GHz). The first cut-off frequency (for example, 97 GHz) can be the same as the starting frequency point (for example, 97 GHz) of the working frequency band (for example, 97 - 181 GHz). Similarly, the first cut-off frequency being the same as the starting frequency point of the working frequency band means that the first cut-off frequency and the starting frequency point of the working frequency band are the same within a certain accuracy range.

[0103] At this time, the first SWS structure 240 can suppress the propagation of electromagnetic waves with a frequency above the starting frequency point (for example, 97 GHz) transmitted on the first transmission line 221 and the second transmission line 222 along the X direction (i.e., the direction in which the periodic structure in the first SWS structure 240 is arranged). In this way, as Figure 13 shown, when the first SWS structure 240 is arranged between the first transmission line 221 and the first EBG structure 230, the energy from the first transmission line 221 leaking along the X direction above or below the first EBG structure 230 can be suppressed, and further, the signal crosstalk between the first transmission line 221 and the second transmission line 222 can be suppressed, achieving the purpose of improving the isolation degree between the first transmission line 221 and the second transmission line 222.

[0104] Or, when the first SWS structure 240 is arranged between the second transmission line 222 and the first EBG structure 230, the energy from the second transmission line 222 leaking along the X direction above or below the first EBG structure 230 can be suppressed, and further, the signal crosstalk between the first transmission line 221 and the second transmission line 222 can be suppressed, improving the isolation degree.

[0105] Or, in order to further improve the isolation degree, as Figure 14As shown, the circuit board 201 may include two adjacent first SWS structures 240, and the first EBG structure 230 may be located between the two adjacent first SWS structures 240. In this way, the first SWS structure 240 is provided between the first transmission line 221 and the first EBG structure 230, and between the second transmission line 222 and the first EBG structure 230, so as to be able to suppress the energy leakage from the first transmission line 221 to the second transmission line 222 along the X direction, and can also suppress the energy leakage from the second transmission line 222 to the first transmission line 221.

[0106] Exemplarily, in order to enable the first SWS structure 240 to effectively suppress the signal crosstalk between the first transmission line 221 and the second transmission line 222 along the X direction, the vertical projections of the first transmission line 221 and the second transmission line 222 on the first SWS structure 240 are respectively located within the area where the first SWS structure 240 is located. In this way, the end of the first SWS structure 240 along the X direction can extend beyond the ends of the first transmission line 221 and the second transmission line 222, or be flush with the ends of the first transmission line 221 and the second transmission line 222, so as to avoid the energy leakage from the end of the first SWS structure 240 between the first transmission line 221 and the second transmission line 222 along the X direction.

[0107] The above takes the first SWS structure 240 including Figure 15A as shown in the example of a plurality of first metal patches 241. In some other embodiments of the present application, the first SWS structure 240 may further include Figure 15B as shown in the first metal strip 242, the first metal strip 242 may be located on the side of the first metal patch 241 facing away from the first EBG structure 230, and the first metal strip 242 may be connected to the plurality of first metal patches 241. As Figure 15C shown, the first metal strip 242 may be disposed on the second surface a2 of the first dielectric layer 2011 along the extending direction of the first transmission line 221 (i.e., the X direction). In this case, a metal layer may be formed on the second surface a2 of the first dielectric layer 2011, and then the metal layer may be etched to form the first metal patch 241 and the first metal strip 242 which are arranged in the same layer and connected as an integral structure, so as to achieve the purpose of simplifying the process.

[0108] Figure 15BTherefore, taking the example that in the same first SWS structure 240, multiple first metal patches 241 are strip-shaped and arranged in parallel, the multiple first metal patches 241 arranged in parallel can simplify the pattern of the mask material or the structure of the mask plate for manufacturing the first SWS structure 240. In this case, in the same first SWS structure 240, the lengths of the multiple first metal patches 241 in the same direction, such as the Y direction (or the X direction), can be the same. Or, as shown in (a) of Figure 16 , in the same first SWS structure 240, the lengths of the multiple first metal patches 241 in the same direction, such as the Y direction (or the X direction), can be different. In addition, in the same first SWS structure 240, the multiple first metal patches 241 can all be perpendicularly arranged to the first metal strip 242, or, as shown in (b) of Figure 16 , in the same first SWS structure 240, the multiple first metal patches 241 can all be crossed (for example, inclined) with the first metal strip 242. This application does not make any limitations in this regard, and the structure of the first SWS structure 240 can be set according to the cut-off frequency of the first SWS structure 240.

[0109] In addition, as can be seen from the above, the first transmission line 221 and the second transmission line 222 are arranged on the second surface a2 of the first dielectric layer 2011. In this case, as shown in Figure 17 , in the first SWS structure 240 located between the first transmission line 221 and the first EBG structure 230, the first metal strip 242 can be connected to the first transmission line 221 to form an integral structure. Similarly, in the first SWS structure 240 located between the second transmission line 222 and the first EBG structure 230, the first metal strip 242 can be connected to the second transmission line 222. In this way, the first metal strip 242 can be used as a part of the first transmission line 221 or the second transmission line 222 to transmit electromagnetic waves. In addition, the first transmission line 221 or the second transmission line 222 can also be used as a part of the first metal strip 242 to be connected to the multiple first metal patches 241. On this basis, since the first transmission line 221 and the second transmission line 222 are both arranged on the second surface a2. Therefore, a metal layer can be formed on the second surface a2 of the first dielectric layer 2011, and then the metal layer can be etched to form the first metal strip 242 and the first transmission line 221 (or the second transmission line 222) which are arranged in the same layer and connected into an integral structure, so as to achieve the purpose of simplifying the process.

[0110] Or, in some other embodiments of this application, the setting manner of the above first SWS structure 240 can be as shown in Figure 18As shown, in the case where the first periodic structure 2301 in the first EBG structure 230 includes the second metal patch 232, the circuit substrate 201 may include a plurality of first SWS structures 240. The first periodic structure 2301 in the first EBG structure 230 is located between two adjacent first SWS structures 240, and the second metal patch 232 in the first periodic structure 2301 may be connected to the first metal patch 241 of the two adjacent first SWS structures 240. In this way, the first SWS structure 240 is disposed on both sides of each second metal patch 232, which is conducive to improving the suppression effect of the first EBG structure 230 and the first SWS structure 240 on the energy leakage between the first transmission line 221 and the second transmission line 222.

[0111] Similarly, since the first metal patch 241 and the second metal patch 232 are both disposed on the second surface a2, a metal layer can be formed on the second surface a2 of the first dielectric layer 2011, and then the metal layer is etched to form the second metal patch 232 and the plurality of first metal patches 241 disposed on the same layer and connected as an integral structure, so as to simplify the process.

[0112] The above description is based on the example that the first SWS structure 240 includes the first metal patch 241, or the first SWS structure 240 includes the first metal patch 241 and the first metal strip 242 connected to the first metal patch 241. The first SWS structure 240 can be connected to the first metal patch 241. Figure 7 The grounding layer 2012 is insulated between them, so that the metal layer on the first dielectric layer 2011 in the circuit substrate 201 is etched to form the first SWS structure 240, thereby simplifying the manufacturing process. Alternatively, in other embodiments of the present application, the first metal patch 241 (or the first metal strip 242) in the first SWS structure 240 can be electrically connected to the grounding layer 2012 by setting a via in the first dielectric layer 2011.

[0113] The present application does not limit whether the first SWS structure 240 is grounded. As long as it can be ensured that the first SWS structure 240 has a first metal patch 241 arranged along the extension direction (i.e., the X direction) of the first transmission line 221, so that the dispersion curve of the first SWS structure 240 has the following Figure 14 The low-pass characteristics shown are sufficient.

[0114] In summary, in the circuit board 201, between the first transmission line 221 and the second transmission line 222, there is a first EBG structure 230 that suppresses the signal crosstalk between the first transmission line 221 and the second transmission line 222 along the Y direction, and there is also a first SWS structure 240 that suppresses the signal crosstalk between the first transmission line 221 and the second transmission line 222 along the X direction. Thus, the isolation degree between the first transmission line 221 and the second transmission line 222 within the plane of the circuit board 201 can be improved.

[0115] For example, as Figure 19A shown, curve ① represents the isolation degree between the first transmission line 221 and the second transmission line 222 in the circuit board 201 provided by the application embodiment with the above-mentioned first EBG structure 230 and first SWS structure 240. The minimum value of this isolation degree can reach -70 dB (at about the frequency point of 162 GHz). Curve ② represents the isolation degree between adjacent two transmission lines in the circuit board only provided with the EBG structure. The minimum value of this isolation degree is about -55 dB (at about the frequency point of 112 GHz). Curve ③ represents the isolation degree between adjacent two transmission lines in the circuit board without the EBG structure and the SWS structure. The minimum value of this isolation degree is about -25 dB (at about the frequency point of 113 GHz).

[0116] Therefore, the isolation degree shown by curve ① is much higher than that of curve ② and curve ③, which indicates that when in the circuit board 201, after the first EBG structure 230 and the first SWS structure 240 are set between two adjacent transmission lines, such as the first transmission line 221 and the second transmission line 222, the isolation degree between the first transmission line 221 and the second transmission line 222 can be effectively improved. Therefore, in the package structure 20 with the above-mentioned circuit board 201, a bare chip 202 with signal transceiver function as Figure 3 shown can be set, and the isolation degree of the package structure 20 for receiving and sending signals can be ensured.

[0117] In addition, as Figure 19B shown, curve ① represents the insertion loss of the first transmission line 221 and the second transmission line 222 in the circuit board 201 provided by the application embodiment with the above-mentioned first EBG structure 230 and first SWS structure 240. The maximum value of this insertion loss (at about the frequency point of 170 GHz) can be about -1 dB. Curve ② represents the insertion loss of the transmission line in the circuit board only provided with the EBG structure. The maximum value of this insertion loss (at about the frequency point of 170 GHz) can be about -1.7 dB. Curve ③ represents the insertion loss of the transmission line in the circuit board without the EBG structure and the SWS structure. The maximum value of this insertion loss (at about the frequency point of 115 GHz) can be about -1.8 dB. Therefore, the insertion loss shown by curve ① is much smaller than that of curve ② and curve ③, and the transmission efficiency of the first transmission line 221 and the second transmission line 222 can be improved by about 1 dB.

[0118] On this basis, Figure 5 It can be seen that the metal transfer structure 21 is provided with a mounting groove 210, and the package structure 20 is disposed in the mounting groove 210. Both ends of the mounting groove 210 along the Y direction penetrate the metal transfer structure 21. Therefore, in order to suppress the energy leakage of the first transmission line 221 and the second transmission line 222 along the Y direction at both ends of the mounting groove 210 in the package structure 20, the circuit substrate 201 in the package structure 20 is as follows: Figure 20 (along Figure 5 As shown in the perspective structure diagram obtained from the A direction in FIG, it may include a second EBG structure 250, a second SWS structure 260, a third EBG structure 270 and a third SWS structure 280.

[0119] Among them, continue as Figure 20 As shown, the first transmission line 221 may be located between the first EBG structure 230 and the second EBG structure 250. The second EBG structure 250 may include a plurality of second periodic structures 2501 arranged in an array. The second periodic structure 2501 may include Figure 21 (along Figure 20 The third metal patch 251 and the second conductive pillar 252 are shown in the top view obtained by cutting along the dotted line O3-O4 in FIG. The third metal patch 251 is located on the second surface a2 of the first dielectric layer 2011, the second conductive pillar 252 penetrates the first dielectric layer 2011, and the two ends of the second conductive pillar 252 are electrically connected to the third metal patch 251 and the ground layer 2012 respectively.

[0120] The above is an example of the second periodic structure 2501 of the second EBG structure 250 including the third metal patch 251 and the second conductive column 252. In other embodiments of the present application, the second periodic structure 2501 may only include the second conductive column 252. The technical effects of the second EBG structure 250 and the first EBG structure 230 are the same, and will not be repeated here. Figure 20 As shown, the second EBG structure 250 is arranged on the side of the first transmission line 221 away from the first EBG structure 230, and the energy from the first transmission line 221 can be suppressed by the second EBG structure 250 along the Y-axis toward the second EBG structure 250, that is, Figure 5 One end of the middle mounting slot 210 along the Y direction is leaked to improve the signal transmission efficiency.

[0121] In addition, continue as Figure 20 As shown, the second SWS structure 260 may be located between the first transmission line 221 and the second EBG structure 250. The second SWS structure 260 includes a plurality of fourth metal patches 261 arranged at intervals along the extending direction of the first transmission line 221 (ie, the X direction). Figure 21As shown, the fourth metal patch 261 can be disposed on the second surface a2. In the same way as the setting method of the above first SWS structure 240,

[0122] Exemplarily, multiple fourth metal patches 261 in the second SWS structure 260 can be connected to the first transmission line 221 to form an integral structure. Or, again exemplarily, the second SWS structure 260 can also include a metal strip (not shown in the figure) connected to the multiple fourth metal patches 261 and arranged along the extension direction of the first transmission line 221, and the metal strip can connect the multiple fourth metal patches 261. In addition, the second SWS structure 260 can be Figure 21 insulated from the shown ground layer 2012, or the second SWS structure 260 can be electrically connected to the ground layer 2012, and the present application does not limit this.

[0123] The technical effects of the above second SWS structure 260 and the first SWS structure 240 are the same and will not be elaborated here. Therefore, as Figure 20 shown, by disposing the second SWS structure 260 on the side of the first transmission line 221 away from the first EBG structure 230, the energy from the first transmission line 221 can be suppressed from bypassing the edge of the second EBG structure 250 along the X-axis, and then Figure 5 the phenomenon of leakage from one end of the installation groove 210 along the Y direction in it can be prevented, so as to improve the signal transmission efficiency.

[0124] Similarly, the second transmission line 222 is located between the first EBG structure 230 and the third EBG structure 270. The third EBG structure 270 can include multiple third periodic structures 2701 arranged in an array. The third periodic structure 2701 can include Figure 21 the shown fifth metal patch 271 and the third conductive post 272. The fifth metal patch 271 is located on the second surface of the first dielectric layer 2011, the third conductive post 272 penetrates through the first dielectric layer 2011, and both ends of the third conductive post 272 are electrically connected to the fifth metal patch 271 and the ground layer 2012 respectively.

[0125] The above takes the third periodic structure 2701 of the third EBG structure 270 including the fifth metal patch 271 and the third conductive post 272 as an example for illustration. In some other embodiments of the present application, the above third periodic structure 2701 can only include the third conductive post 272. The technical effects of the above third EBG structure 270 and the first EBG structure 230 are the same and will not be elaborated here. Therefore, as Figure 20As shown, the third EBG structure 270 is disposed on the side of the second transmission line 222 away from the first EBG structure 230, and the third EBG structure 270 can suppress the energy from the second transmission line 222 in the Y-axis direction towards the third EBG structure 270, that is Figure 5 leakage at the other end of the mounting groove 210 in the Y direction.

[0126] In addition, continuing as Figure 20 shown, the third SWS structure 280 can be located between the second transmission line 222 and the third EBG structure 270. The third SWS structure 280 includes a plurality of sixth metal patches 281 arranged at intervals along the extending direction of the second transmission line 222 (i.e., the X direction), as Figure 21 shown, the sixth metal patches 281 can be disposed on the second surface a2. In the same setting manner as the above-mentioned first SWS structure 240, for example, the plurality of sixth metal patches 281 in the third SWS structure 280 can be connected to the second transmission line 222 to form an integral structure. Or, for another example, the third SWS structure 280 can also include a metal strip (not shown in the figure) connected to the above-mentioned plurality of sixth metal patches 281 and arranged along the extending direction of the second transmission line 222, and the metal strip can connect the above-mentioned plurality of sixth metal patches 281. In addition, the third SWS structure 280 can be Figure 21 insulated from the ground layer 2012 as shown, or the third SWS structure 280 can be electrically connected to the ground layer 2012, and the present application does not limit this.

[0127] The technical effects of the above-mentioned third SWS structure 280 and the first SWS structure 240 are the same, and will not be elaborated here. Therefore, as Figure 20 shown, by disposing the third SWS structure 280 on the side of the second transmission line 222 away from the first EBG structure 230, the third SWS structure 280 can suppress the energy from the second transmission line 222 from bypassing the edge of the third EBG structure 270 along the X axis, and further Figure 5 prevent the occurrence of leakage at the other end of the mounting groove 210 in the Y direction.

[0128] As described above, the first transmission line 221 and the second transmission line 222 in the circuit board 201 can be radiators, and the transmission direction of the electromagnetic waves radiated by the above radiators can be parallel to the board surface of the circuit board 201. In some other embodiments of the present application, the first transmission line 221 and the second transmission line 222 can respectively form a substrate integrated waveguide (SIW) with different radiators in the circuit board 201, and the SIW can also radiate electromagnetic waves parallel to the board surface of the circuit board 201. The structure of the above SIW will be exemplified below. For example, the first transmission line 221 can be the first radiator 2210 for transmitting signals (or receiving signals) (such as Figure 22 as shown), and the second transmission line 222 can be the second radiator 2220 for receiving signals (or transmitting signals) (such as Figure 22 as shown). In addition, the circuit board 201 can further include a third radiator 2230, a fourth radiator 2240, a fourth EBG structure 290 as shown in Figure 22 , and a second dielectric layer 2013 and a fourth SWS structure 310 as shown in Figure 23 (a cross-sectional view obtained by cutting along the dashed line O5 - O6 in Figure 22 ).

[0129] Among them, as shown in Figure 23 , the second dielectric layer 2013 is stacked with the first dielectric layer 2011, and the second dielectric layer 2013 has a third surface a3 and a fourth surface a4 arranged oppositely, and the grounding layer 2012 is located between the first dielectric layer 2011 and the second dielectric layer 2013. In addition, the third radiator 2230 is disposed on the fourth surface a4, and the third radiator 2230 and the first radiator 2210 are arranged oppositely, and the third radiator 2230 and the first radiator 2210 can form a first SIW41.

[0130] For example, as shown in Figure 24 (a perspective structure diagram obtained by looking along the A direction in Figure 5 ), the first radiator 2210 can have a horn-shaped opening facing the first waveguide cavity 211. The third radiator 2230 and the first radiator 2210 have the same shape, and the third radiator 2230 and the first radiator 2210 are stacked and arranged in reverse. In addition, the circuit board 201 can include vias (represented by black cylinders in the figure) passing through the first dielectric layer 2011 and the second dielectric layer 2013 as shown in Figure 23 . The vias are disposed around the first radiator 2210 and electrically connect the third radiator 2230 and the first radiator 2210, so that an electrical connection can be formed between the third radiator 2230 and the first radiator 2210 as shown in Figure 22The first microwave transmission path ① of the first SIW41 shown above. The above-mentioned first microwave transmission path ① can transmit electromagnetic waves parallel to the board surface of the circuit board. Similarly, as Figure 23 shown, the fourth radiator 2240 is disposed on the fourth surface a4. The fourth radiator 2240 and the second radiator 2220 are oppositely disposed, and the fourth radiator 2240 and the second radiator 2220 can form a second SIW42.

[0131] Exemplarily, as Figure 24 shown, the above-mentioned second radiator 2220 may have a horn-shaped opening facing the second waveguide cavity 212. The fourth radiator 2240 has the same shape as the second radiator 2220, and the fourth radiator 2240 and the second radiator 2220 are stacked and arranged in reverse. In addition, the via holes (represented by black cylinders in the figure) penetrating the first dielectric layer 2011 and the second dielectric layer 2013 shown above are disposed around the second radiator 2220, and electrically connect the fourth radiator 2240 and the second radiator 2220, so that a second microwave transmission path ② of the second SIW42 shown as Figure 23 shown can be formed between the fourth radiator 2240 and the second radiator 2220. The above-mentioned second microwave transmission path ② can transmit electromagnetic waves parallel to the board surface of the circuit board. Figure 22 shown can be formed between the fourth radiator 2240 and the second radiator 2220. The above-mentioned second microwave transmission path ② can transmit electromagnetic waves parallel to the board surface of the circuit board.

[0132] On this basis, as Figure 23 shown, in order to suppress signal crosstalk between the third radiator 2230 and the fourth radiator 2240, the above-mentioned fourth EBG structure 290 can be located between the third radiator 2230 and the fourth radiator 2240. The fourth EBG structure 290 can include a plurality of fourth periodic structures 2901 arranged in an array. The fourth periodic structure 2901 can include a seventh metal patch 291 and a fourth conductive post 292. Among them, the seventh metal patch 291 is located on the fourth surface a4, the fourth conductive post 292 penetrates the second dielectric layer 2013, and both ends of the fourth conductive post 292 are electrically connected to the seventh metal patch 291 and the ground layer 2012 respectively. Among them, the vertical projection of one first periodic structure 2301 on the ground layer 2012 overlaps with the vertical projection of one fourth periodic structure 2901 on the ground layer 2012. When the structures of the first periodic structure 2301 and the fourth periodic structure 2901 are the same, the above-mentioned first periodic structure 2301 and the fourth periodic structure 2901 can be prepared by the same manufacturing process, which is beneficial to simplifying the manufacturing process.

[0133] The above takes the fourth - period structure 2901 of the fourth EBG structure 290, which includes the seventh metal patch 291 and the fourth conductive post 292, as an example for illustration. In some other embodiments of the present application, the above - mentioned fourth EBG structure 290 may only include the fourth conductive post 292. The technical effects of the above - mentioned fourth - period structure 2901 and the first EBG structure 230 are the same, and will not be elaborated here.

[0134] In addition, continuing as Figure 23 shown, the fourth SWS structure 310 is located between the third radiator 2230 and the fourth radiator 2240. The fourth SWS structure 310 includes a plurality of eighth metal patches 311 arranged at intervals along the extending direction of the third radiator 2230. The eighth metal patches 311 are disposed on the fourth surface a4. The vertical projection of the fourth SWS structure 310 on the ground layer 2012 overlaps with the vertical projection of the first SWS structure 240 on the ground layer 2012. The setting manner of the metal patches in the fourth SWS structure 310 and the first SWS structure 240, as well as the technical effects, are the same as those described above, and will not be elaborated here.

[0135] Based on this, as Figure 24 shown, the above - mentioned second EBG structure 250 and second SWS structure 260 can be disposed on the side of the first SIW41 away from the first EBG structure, and the above - mentioned third EBG structure 270 and third SWS structure 280 can be disposed on the side of the second SIW42 away from the first EBG structure. Thus, while improving the isolation between the first SIW41 and the second SIW42, the leakage of the energy of the first SIW41 and the second SIW42 in the direction away from the first EBG structure can be suppressed.

[0136] In this case, continuing as Figure 24 shown, the signal from the bare chip 202 can be transmitted through the first SIW41 to the first waveguide cavity 211 in the metal transition structure 21 and output to other electronic devices through the first dielectric waveguide 1011. In addition, the second SIW42 can receive the signal received by the second dielectric waveguide 1012 and transmitted through the second waveguide cavity 212. The second SIW42 transmits the above - mentioned signal to the bare chip 202, thereby realizing signal transmission and reception.

[0137] The above takes Figure 21 the first transmission line 221 in Figure 22An example is given with the first SIW41 shown being used to transmit signals and the second SIW42 being used to receive signals. In some other embodiments of the present application, the first transmission line 221 may be a radiator for receiving signals, the second transmission line 222 may be a radiator for transmitting signals, and the first SIW41 may be used to receive signals while the second SIW42 may be used to transmit signals. Or, in some other embodiments, the first transmission line 221, the second transmission line 222, the first SIW41, and the second SIW42 are all used to transmit signals. Or, in some other embodiments, the first transmission line 221, the second transmission line 222, the first SIW41, and the second SIW42 are all used to receive signals. The present application does not limit this.

[0138] Moreover, the above description is given by taking the electromagnetic waves transmitted by the first transmission line 221, the second transmission line 222, the first SIW41, and the second SIW42 as being parallel to the Figure 24 plane of the circuit board 201 shown as an example. When the structures of the first transmission line 221, the second transmission line 222, the first SIW41, and the second SIW42 are changed, the electromagnetic waves transmitted by the above-mentioned first transmission line 221, second transmission line 222, first SIW41, and second SIW42 can also be perpendicular to the plane of the circuit board 201. In this case, the first waveguide cavity 211 and the second waveguide cavity 212 in the metal transition structure 21, and the first dielectric waveguide 1011 located in the first waveguide cavity 211 and the second dielectric waveguide 1012 located in the second waveguide cavity 212 can be perpendicular to the plane of the circuit board 201.

[0139] In addition, the above description is given by taking the circuit board 201 as the above-mentioned packaging substrate and the bare chip 202 having signal transceiver functions, and the first transmission line 221 and the second transmission line 222 (as Figure 21 shown) can be radiators (or microstrip lines) for transmitting electromagnetic waves as an example. In some other embodiments of the present application, when the circuit board 201 is the first PCB, the first transmission line 221 and the second transmission line 222 can be striplines within the first PCB. Among them, the stripline can be a metal trace in the dielectric between two conductive metal layers provided in the first PCB.

[0140] As described above, the above is only the specific implementation manner of the present application, but the protection scope of the present application is not limited thereto. Any change or replacement within the technical scope disclosed in the present application should be covered within the protection scope of the present application. Therefore, the protection scope of the present application should be subject to the protection scope of the claimed rights.

Claims

1. A circuit board, characterized in that, Comprising: A first dielectric layer having a first surface and a second surface disposed opposite to each other; A ground layer disposed on the first surface; A first transmission line disposed on the second surface; A second transmission line disposed on the second surface; A first electromagnetic bandgap (EBG) structure located between the first transmission line and the second transmission line. The first EBG structure includes a plurality of first periodic structures arranged in an array. The first periodic structure includes a first conductive post. The first conductive post penetrates through the first dielectric layer, and the first conductive post is electrically connected to the ground layer; At least one first slow wave structure (SWS) located between the first transmission line and the second transmission line. The first SWS structure includes a plurality of first metal patches arranged at intervals along the extending direction of the first transmission line. The first metal patches are disposed on the second surface.

2. The circuit board according to claim 1, characterized in that The circuit board includes two adjacent first SWS structures, and the first EBG structure is located between the two adjacent first SWS structures.

3. The circuit board according to claim 2, wherein The first SWS structure further includes: A first metal strip disposed on the second surface along the extending direction of the first transmission line. The first metal strip is located on the side of the first metal patch away from the first EBG structure, and the first metal strip is connected to the first metal patch.

4. The circuit board according to claim 3, wherein The first metal strip is connected to the first transmission line or the second transmission line.

5. The circuit board according to any one of claims 1-4, characterized in that, The first SWS structure is insulated from the ground layer.

6. The circuit board according to any one of claims 1-5, characterized in that, The first periodic structure further includes a second metal patch located on the second surface. One end of the first conductive post away from the ground layer is electrically connected to the second metal patch.

7. The circuit board according to claim 1, wherein The first periodic structure further includes a second metal patch located on the second surface. One end of the first conductive post away from the ground layer is electrically connected to the second metal patch; The circuit board includes a plurality of the first SWS structures. The first periodic structure is located between two adjacent first SWS structures, and the second metal patch is connected to the first metal patches of the two adjacent first SWS structures.

8. The circuit board according to any one of claims 1-7, characterized in that, The circuit board further includes: A second EBG structure. The first transmission line is located between the first EBG structure and the second EBG structure. The second EBG structure includes a plurality of second periodic structures arranged in an array. The second periodic structure includes a third metal patch and a second conductive post. The third metal patch is located on the second surface. The second conductive post penetrates through the first dielectric layer, and both ends of the second conductive post are electrically connected to the third metal patch and the ground layer respectively; A second SWS structure located between the first transmission line and the second EBG structure. The second SWS structure includes a plurality of fourth metal patches arranged at intervals along the extending direction of the first transmission line. The fourth metal patches are disposed on the second surface.

9. The circuit board according to any one of claims 1-8, characterized in that, The circuit board further includes: The third EBG structure, where the second transmission line is located between the first EBG structure and the third EBG structure; the third EBG structure includes a plurality of third periodic structures arranged in an array; the third periodic structure includes a fifth metal patch and a third conductive post; the fifth metal patch is located on the second surface, the third conductive post penetrates through the first dielectric layer, and both ends of the third conductive post are electrically connected to the fifth metal patch and the ground layer respectively; The third SWS structure, located between the second transmission line and the third EBG structure; the third SWS structure includes a plurality of sixth metal patches arranged at intervals along the extending direction of the second transmission line, and the sixth metal patches are disposed on the second surface.

10. The circuit substrate according to any one of claims 1-9, wherein the circuit substrate is a package substrate, and the first transmission line and the second transmission line are microstrip lines or radiators.

11. The circuit board according to claim 10, characterized in that, The first transmission line is a first radiator, and the second transmission line is a second radiator; The circuit substrate further includes: A second dielectric layer, stacked with the first dielectric layer, the second dielectric layer having a third surface and a fourth surface disposed opposite to each other; the ground layer is located between the first dielectric layer and the second dielectric layer; A third radiator, disposed on the fourth surface; the third radiator and the first radiator form a first substrate integrated waveguide; A fourth radiator, disposed on the fourth surface; the fourth radiator and the second radiator form a second substrate integrated waveguide; A fourth EBG structure, located between the third radiator and the fourth radiator, the fourth EBG structure includes a plurality of fourth periodic structures arranged in an array; the fourth periodic structure includes a seventh metal patch and a fourth conductive post; the seventh metal patch is located on the fourth surface, the fourth conductive post penetrates through the second dielectric layer, and both ends of the fourth conductive post are electrically connected to the seventh metal patch and the ground layer respectively; the vertical projection of one of the first periodic structures on the ground layer overlaps with the vertical projection of one of the fourth periodic structures on the ground layer; A fourth SWS structure, located between the third radiator and the fourth radiator; the fourth SWS structure includes a plurality of eighth metal patches arranged at intervals along the extending direction of the third radiator, and the eighth metal patches are disposed on the fourth surface; the vertical projection of the fourth SWS structure on the ground layer overlaps with the vertical projection of the first SWS structure on the ground layer.

12. The circuit substrate according to any one of claims 1-11, wherein the circuit substrate is a first printed circuit board, and the first transmission line and the second transmission line are strip lines.

13. The circuit board according to any one of claims 1-12, characterized in that, The electromagnetic waves transmitted on the first transmission line and the second transmission line have an operating frequency band; The first EBG structure has a first band-stop frequency band, and the first band-stop frequency band is the same as the operating frequency band; The first SWS structure has a first cut-off frequency, and the first cut-off frequency is the same as the starting frequency point of the operating frequency band.

14. The circuit board according to any one of claims 5-13, characterized in that, The shape of the vertical projection of the second metal patch on the first dielectric layer is rectangular, circular, elliptical, triangular or polygonal.

15. The circuit board according to any one of claims 1 to 12, characterized in that, In the same first SWS structure, multiple first metal patches are strip-shaped and arranged in parallel.

16. The circuit board according to any one of claims 1-15, characterized in that, The first metal patch is strip-shaped, and in the same first SWS structure, the lengths of at least two first metal patches in the same direction are different.

17. An encapsulation structure, characterized in that, Comprising: The circuit board according to any one of claims 1-16, wherein the circuit board is a packaging board; the first transmission line and the second transmission line of the circuit board are radiators. A bare chip is disposed on the circuit board, and the bare chip is coupled to the first transmission line and the second transmission line.

18. An electronic device, characterized in that, Comprising: The packaging structure according to claim 17. A second printed circuit board, and the packaging structure is electrically connected to the second printed circuit board.

19. A data transceiver device, characterized in that, Comprising: The packaging structure according to claim 17, wherein the first transmission line and the second transmission line in the packaging structure are radiators. A metal transfer structure is provided with a mounting groove, and the packaging structure is disposed in the mounting groove. The metal transfer structure is provided with a first waveguide cavity and a second waveguide cavity communicating with the mounting groove; the first waveguide cavity is coupled to the first transmission line, and the second waveguide cavity is coupled to the second transmission line.

20. The data transceiver device according to claim 19, wherein The data transceiver device further comprises: A first dielectric waveguide is disposed in the first waveguide cavity, and the first dielectric waveguide is coupled to the first transmission line through the first waveguide cavity. A second dielectric waveguide is disposed in the second waveguide cavity, and the second dielectric waveguide is coupled to the second transmission line through the second waveguide cavity.

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