Plasma processing apparatus and control method

Abstract

The susceptor is disposed in a plasma processing chamber, and a flow path for a heat transfer medium is formed in the susceptor. The temperature adjustment unit can circulate the heat transfer medium in the flow path and can adjust the temperature of the heat transfer medium. The electrostatic chuck is disposed on an upper surface of the susceptor, and includes a substrate placement portion and an edge ring placement portion surrounding the substrate. The first electrostatic electrode layer is disposed in the substrate mounting portion. The second electrostatic electrode layer is disposed in the edge ring mounting portion. The first electrostatic adsorption power supply can be electrically connected to the first electrostatic electrode layer. The second electrostatic adsorption power supply can be electrically connected to the second electrostatic electrode layer. The adsorption sheet is disposed between the substrate mounting part and the substrate and / or between the edge ring mounting part and the edge ring, and the adhesion force of the adsorption sheet can be changed by changing the temperature.

Description

Technical Field

[0001] The present invention relates to a plasma processing apparatus and a control method. Background Art

[0002] Patent Document 1 below discloses "a plasma processing apparatus having a focusing ring disposed outside a substrate placed on a mounting table having a temperature adjusting mechanism, in contact with the mounting table via a heat transfer sheet, characterized in that: on the surface of the focusing ring on the heat transfer sheet side, an insulating layer having a thermal conductivity lower than that of the focusing ring is provided".

[0003] In addition, Patent Document 2 below discloses "a mounting table including: an electrostatic chuck for supporting a substrate and an edge ring; and a base for supporting the electrostatic chuck, the electrostatic chuck having: a first region having a first upper surface capable of supporting a substrate placed above the first upper surface; a second region having a second upper surface integrally provided around the first region and capable of supporting an edge ring placed above the second upper surface; a first electrode provided in the first region capable of applying a DC voltage; a second electrode provided in the second region capable of applying a DC voltage; and a third electrode capable of applying a bias electric power".

[0004] Prior Art Documents

[0005] Patent Documents

[0006] Patent Document 1: Japanese Unexamined Patent Application Publication No. 2016-39344

[0007] Patent Document 2: Japanese Unexamined Patent Application Publication No. 2020-205379 Summary of the Invention

[0008] Technical Problem to be Solved by the Invention

[0009] The present invention provides a technique for improving the thermal conductivity between at least one of a substrate and an edge ring and a mounting table.

[0010] Means for Solving the Technical Problem

[0011] One embodiment of the plasma processing apparatus of the present invention includes a plasma processing chamber, a susceptor, a temperature control unit, an electrostatic chuck, a first electrostatic electrode layer, a second electrostatic electrode layer, a first electrostatic adsorption power supply, a second electrostatic adsorption power supply, and an adsorption sheet. The susceptor is disposed in the plasma processing chamber, and a flow path for a heat transfer medium is formed inside the susceptor. The temperature control unit can circulate the heat transfer medium in the flow path and can adjust the temperature of the heat transfer medium. The electrostatic chuck is disposed on the upper surface of the susceptor and includes a substrate placement portion capable of placing a substrate and an edge ring placement portion capable of placing an edge ring surrounding the substrate. The first electrostatic electrode layer is disposed in the substrate placement portion. The second electrostatic electrode layer is disposed in the edge ring placement portion. The first electrostatic adsorption power supply can be electrically connected to the first electrostatic electrode layer. The second electrostatic adsorption power supply can be electrically connected to the second electrostatic electrode layer. The adsorption sheet is disposed between the substrate placement portion and the substrate placed on the substrate placement portion and / or between the edge ring placement portion and the edge ring placed on the edge ring placement portion, and the adhesive force of the adsorption sheet can be changed by changing the temperature.

[0012] Advantages of the Invention

[0013] By adopting the present invention, the heat conductivity between at least one of the substrate and the edge ring and the placement table can be improved. Description of the Drawings

[0014] Figure 1 It is a diagram for explaining a structural example of a capacitively coupled plasma processing apparatus.

[0015] Figure 2 It is a diagram showing an example of the structure of a substrate support portion.

[0016] Figure 3A It is a diagram showing an example of the change in the adhesive force of the adsorption sheet.

[0017] Figure 3B It is a diagram showing an example of bonding an object using the adsorption sheet.

[0018] Figure 4A It is a diagram showing an example of cutting a ring-shaped adsorption sheet into a plurality of regions.

[0019] Figure 4B It is a diagram showing an example of cutting a ring-shaped adsorption sheet into a plurality of regions.

[0020] Figure 5 It is a diagram for explaining the improvement of the heat conductivity of the ring assembly in the embodiment.

[0021] Figure 6 It is a diagram for explaining the improvement of the heat conductivity of the substrate W in the embodiment.

[0022] Figure 7 This is a diagram schematically showing an example of the structure of a conventional substrate support section.

[0023] Figure 8 This is a flowchart showing an example of the control process flow of the control method including the embodiment.

[0024] Figure 9A This is a diagram schematically showing an example of the process of holding a retaining ring assembly.

[0025] Figure 9B This is a diagram showing an example of the temperature change of the adsorption sheet.

[0026] Figure 10 This is a diagram showing an example of the schematic structure near the top of the upper part of the plasma processing chamber. Detailed Embodiments

[0027] Hereinafter, embodiments of the plasma processing apparatus and the control method will be described in detail based on the drawings. In addition, the plasma processing apparatus and the control method of the present invention are not limited to the following embodiments.

[0028] Conventionally, a plasma processing apparatus for performing plasma processing on a substrate such as a semiconductor wafer (hereinafter also referred to as "wafer") has been known. In the plasma processing apparatus, a mounting table for mounting a substrate is provided inside a vacuum chamber. In addition, on the mounting table, an edge ring such as a focus ring is arranged so as to surround the outer periphery of the substrate. The edge ring can expand the distribution area of the plasma generated above the substrate not only to the substrate but also to the edge ring, thereby ensuring the uniformity of processing such as etching performed on the entire surface of the substrate.

[0029] Since the substrate and the edge ring are directly exposed to the plasma, their temperatures will rise due to the heat input from the plasma. Therefore, in the plasma processing apparatus, in order to diffuse the heat of the substrate and the edge ring to the mounting table side, a technique capable of increasing the heat conductivity between at least one of the substrate and the edge ring and the mounting table is expected.

[0030] (Embodiment)

[0031] [Device Structure]

[0032] An example of the plasma processing apparatus of the present invention will be described. In the embodiment described below, the case where the plasma processing apparatus of the present invention is a plasma processing system having a system structure will be taken as an example for description.

[0033] Hereinafter, a structural example of the plasma processing system will be described. Figure 1 This is a diagram for explaining a structural example of a capacitively coupled plasma processing apparatus.

[0034] The plasma processing system includes a capacitively coupled plasma processing apparatus 1 and a control unit 2. The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply 30, and an exhaust system 40. In addition, the plasma processing apparatus 1 includes a substrate support unit 11 and a gas introduction unit. The gas introduction unit is capable of introducing at least one processing gas into the plasma processing chamber 10. The gas introduction unit includes a showerhead 13. The substrate support unit 11 is disposed in the plasma processing chamber 10. The showerhead 13 is disposed above the substrate support unit 11. In one embodiment, the showerhead 13 forms at least a part of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the showerhead 13, the sidewall 10a of the plasma processing chamber 10, and the substrate support unit 11. The plasma processing chamber 10 has at least one gas supply port for supplying at least one processing gas to the plasma processing space 10s, and at least one gas discharge port for discharging gas from the plasma processing space. The plasma processing chamber 10 is grounded. The showerhead 13 and the substrate support unit 11 are electrically insulated from the housing of the plasma processing chamber 10.

[0035] The substrate support unit 11 includes a main body portion 111 and a ring assembly 112. The main body portion 111 has a central region 111a for supporting a substrate W, and a ring-shaped region 111b for supporting the ring assembly 112. A wafer is an example of the substrate W. The ring-shaped region 111b of the main body portion 111 surrounds the central region 111a of the main body portion 111 in a plan view. The substrate W is disposed on the central region 111a of the main body portion 111, and the ring assembly 112 is disposed on the ring-shaped region 111b of the main body portion 111 so as to surround the substrate W on the central region 111a of the main body portion 111. Therefore, the central region 111a is also referred to as a substrate support surface for supporting the substrate W, and the ring-shaped region 111b is also referred to as a ring support surface for supporting the ring assembly 112.

[0036] In one embodiment, the body portion 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive member. The conductive member of the base 1110 can function as a lower electrode. The electrostatic chuck 1111 is disposed on the base 1110. The electrostatic chuck 1111 includes a ceramic member 1111a and electrostatic electrodes 1111b, 1111c disposed within the ceramic member 1111a. The ceramic member 1111a has a central region 111a. In one embodiment, the ceramic member 1111a further has an annular region 111b. The electrostatic electrode 1111b is disposed in a portion of the central region 111a within the ceramic member 1111a. The electrostatic electrode 1111c is disposed in a portion of the annular region 111b within the ceramic member 1111a. The electrostatic electrode 1111b is connected to a DC power supply 114a via a wiring 113a. The electrostatic electrode 1111c is connected to a DC power supply 114b via a wiring 113b. DC voltages can be applied to the electrostatic electrodes 1111b, 1111c from the DC power supplies 114a, 114b, respectively. The DC power supplies 114a, 114b can also be configured as one DC power supply. Further, other components surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member, may have the annular region 111b. In this case, the ring assembly 112 can be disposed on the annular electrostatic chuck or the annular insulating member, or can be disposed on both the electrostatic chuck 1111 and the annular insulating member. Additionally, at least one RF / DC electrode coupled to an RF (Radio Frequency) power supply 31 and / or a DC (Direct Current) power supply 32 described later can be disposed within the ceramic member 1111a. In this case, the at least one RF / DC electrode can function as a lower electrode. When a bias RF signal and / or a DC signal described later is supplied to the at least one RF / DC electrode, the RF / DC electrode is also referred to as a bias electrode. Further, the conductive member of the base 1110 and the at least one RF / DC electrode can function as a plurality of lower electrodes. Further, the electrostatic electrode 1111b can function as a lower electrode. Accordingly, the substrate support portion 11 includes at least one lower electrode.

[0037] The ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one cover ring. The edge ring is formed of a conductive material or an insulating material, and the cover ring is formed of an insulating material.

[0038] In addition, the substrate support portion 11 may include a temperature adjustment module for adjusting at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate to a target temperature. The temperature adjustment module may include a heater, a heat transfer medium, a flow path 1110a, or a combination thereof. A heat transfer fluid such as brine or gas may flow in the flow path 1110a. In one embodiment, the flow path 1110a is formed in the base 1110, and one or more heaters are disposed in the ceramic member 1111a of the electrostatic chuck 1111. Both ends of the flow path 1110a are respectively connected to the temperature adjustment unit 116 via the pipes 115. The temperature adjustment unit 116 circulates a heat transfer medium such as a heat transfer fluid that can be used for temperature adjustment in the flow path 1110a via the pipes 115. In addition, the temperature adjustment unit 116 can control the temperature of the heat transfer medium by the control from the control unit 2 described later. The heat transfer medium supplied from the temperature adjustment unit 116 can circulate in the flow path 1110a and the pipes 115 to adjust the temperature of the main body portion 111. In the present embodiment, the pipes 115 and the temperature adjustment unit 116 correspond to the temperature adjustment portion of the present invention.

[0039] The showerhead 13 can introduce at least one processing gas from the gas supply unit 20 into the plasma processing space 10s. The showerhead 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and a plurality of gas introduction ports 13c. The processing gas supplied to the gas supply port 13a can be introduced into the plasma processing space 10s from the plurality of gas introduction ports 13c through the gas diffusion chamber 13b. In addition, the showerhead 13 includes at least one upper electrode. Further, the gas introduction portion may include, in addition to the showerhead 13, one or more side gas injectors (SGI) installed in one or more openings formed in the side wall 10a.

[0040] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 can supply at least one processing gas from the respective corresponding gas source 21 to the showerhead 13 via the respective corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Moreover, the gas supply unit 20 may include one or more flow modulation devices for modulating or pulsing the flow rate of at least one processing gas.

[0041] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is capable of supplying at least one RF signal (RF electric power) to at least one lower electrode and / or at least one upper electrode. Thereby, a plasma can be formed from at least one processing gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least a part of a plasma generation unit that can generate a plasma from one or more processing gases in the plasma processing chamber 10. In addition, by supplying a bias RF signal to at least one lower electrode, a bias potential can be generated on the substrate W to attract the ion component in the formed plasma to the substrate W.

[0042] In one embodiment, the RF power supply 31 includes a first RF generation unit 31a and a second RF generation unit 31b. The first RF generation unit 31a is coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit and is capable of generating a source RF signal (source RF electric power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, it may be that the first RF generation unit 31a can generate a plurality of source RF signals having different frequencies. The one or more generated source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0043] The second RF generation unit 31b is coupled to at least one lower electrode via at least one impedance matching circuit and is capable of generating a bias RF signal (bias RF electric power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, it may be that the second RF generation unit 31b can generate a plurality of bias RF signals having different frequencies. The one or more generated bias RF signals are supplied to at least one lower electrode. In addition, in various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0044] In addition, the power supply 30 may include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generation unit 32a and a second DC generation unit 32b. In one embodiment, the first DC generation unit 32a is connected to at least one lower electrode and is capable of generating a first DC signal. The generated first bias DC signal is applied to at least one lower electrode. In one embodiment, the second DC generation unit 32b is connected to at least one upper electrode and is capable of generating a second DC signal. The generated second DC signal is applied to at least one upper electrode.

[0045] In various embodiments, at least one of the first DC signal and the second DC signal may be pulsed. In this case, a sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulses may have a pulse waveform in the shape of a rectangle, trapezoid, triangle, or a combination thereof. In one embodiment, a waveform generation unit for generating a sequence of voltage pulses from the DC signal is connected between the first DC generation unit 32a and at least one lower electrode. Thus, the first DC generation unit 32a and the waveform generation unit constitute a voltage pulse generation unit. In the case where the second DC generation unit 32b and the waveform generation unit constitute a voltage pulse generation unit, the voltage pulse generation unit is connected to at least one upper electrode. The voltage pulses may have a positive polarity or a negative polarity. In addition, the sequence of voltage pulses may include one or more positive-polarity voltage pulses and one or more negative-polarity voltage pulses within one cycle. In addition, it may be that in addition to the RF power supply 31, the first DC generation unit 32a and the second DC generation unit 32b are provided, or it may be that the first DC generation unit 32a is provided instead of the second RF generation unit 31b.

[0046] The exhaust system 40 can be connected, for example, to a gas discharge port 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 10s can be adjusted using the pressure regulating valve. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0047] The control unit 2 can process computer-executable commands for causing the plasma processing apparatus 1 to execute various processes described in the present invention. The control unit 2 can control each element of the plasma processing apparatus 1 to execute various processes described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 is implemented by a computer 2a, for example. The processing unit 2a1 can read a program from the storage unit 2a2 and execute various control actions by executing the read program. The program may be pre-stored in the storage unit 2a2 or may be acquired via a medium when needed. The acquired program is stored in the storage unit 2a2 and read and executed by the processing unit 2a1 from the storage unit 2a2. The medium may be various storage media readable by the computer 2a or a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a CPU (Central Processing Unit). The storage unit 2a2 may include a RAM (Random Access Memory), a ROM (Read Only Memory), an HDD (Hard Disk Drive), an SSD (Solid State Drive), or a combination thereof. The communication interface 2a3 can communicate with the plasma processing apparatus 1 via a communication line such as a LAN (Local Area Network).

[0048] The plasma processing apparatus 1 configured as described above can be comprehensively controlled in its operation by the control unit 2 described above.

[0049] The control unit 2 can control plasma etching. For example, the control unit 2 controls the exhaust system 40 to evacuate the inside of the plasma processing chamber 10 to a prescribed degree of vacuum. The control unit 2 controls the gas supply unit 20 to introduce a processing gas for etching from the gas supply unit 20 into the plasma processing space 10s. The control unit 2 controls the power supply 30 to supply electric power from the power supply 30 in cooperation with the introduction of the processing gas to generate plasma inside the plasma processing chamber 10 and perform etching on the substrate W. Since the substrate W and the ring assembly 112 are directly exposed to the plasma, the temperature rises due to the heat input from the plasma.

[0050] In the plasma processing apparatus 1 of the present embodiment, in order to efficiently diffuse the heat of the substrate W and the ring assembly 112 toward the main body portion 111 side, the substrate support portion 11 is configured as follows.

[0051] Figure 2 FIG. is an example of the structure of the substrate support portion 11.Figure 2 Schematically shows the structure of the main body 111 of the substrate support portion 11. The substrate support portion 11 includes a main body 111 and a ring assembly 112. The main body 111 includes a base 1110 and an electrostatic chuck 1111.

[0052] An adsorption sheet 120a is disposed in the central region 111a of the electrostatic chuck 1111, and a substrate W is placed on the adsorption sheet 120a. An adsorption sheet 120b is disposed in the annular region 111b of the electrostatic chuck 1111, and the ring assembly 112 is placed on the adsorption sheet 120a. A flow path 1110a is formed in a region of the base 1110 that at least partially overlaps the regions where the adsorption sheets 120a and 120b are disposed when viewed from above.

[0053] The adhesive force of the adsorption sheets 120a and 120b can be changed by changing the temperature. For example, the adsorption sheets 120a and 120b are composed of a temperature-sensitive adhesive sheet, and the adhesive force changes in a first temperature range and a second temperature range higher than the first temperature range. As such a temperature-sensitive adhesive sheet, for example, INTERMER (registered trademark) tape of NITTA Corporation can be cited. The temperature-sensitive adhesive sheet has a switching temperature at which the adhesive force switches, and the adhesive force changes significantly in a first temperature range lower than the switching temperature and a second temperature range higher than the switching temperature. The switching temperature can be adjusted by the materials contained in the temperature-sensitive adhesive sheet. The temperature-sensitive adhesive sheet has a cool-off type and a warm-off type. For the cool-off type, the adhesive force decreases in the first temperature range and increases in the second temperature range. For the warm-off type, the adhesive force increases in the first temperature range and decreases in the second temperature range.

[0054] In the present embodiment, the adsorption sheets 120a and 120b are of the cool-off type, and the adhesive force increases in a second temperature range higher than the first temperature range. Figure 3A It is a diagram showing an example of the change in the adhesive force of the adsorption sheets 120a and 120b. The adhesive force of the adsorption sheets 120a and 120b decreases in a first temperature range lower than the switching temperature, and the adhesive force of the adsorption sheets 120a and 120b increases in a second temperature range higher than the switching temperature. The switching temperature is, for example, 50°C. Figure 3B It is a diagram showing an example of bonding an object using the adsorption sheets 120a and 120b. For example, when the temperature of the adsorption sheets 120a and 120b becomes the first temperature range (for example, 70°C to 200°C), they become in a state of strong adsorption and can hold the placed object. On the other hand, when the temperature of the adsorption sheets 120a and 120b becomes the second temperature range (for example, 30°C or lower), they become in a state of weak adsorption and can easily peel off the placed object.

[0055] The adsorption sheet 120a is disposed in the central region 111a and thus is formed in a circular shape. The adsorption sheet 120b is disposed in the annular region 111b and thus is formed in an annular shape. When cutting out such a circular adsorption sheet 120a and an annular adsorption sheet 120b from the temperature-sensitive adhesive sheet as the base material without slits, the cut-out size is large. Therefore, there is a situation where the remaining area of the temperature-sensitive adhesive sheet of the base material cannot be effectively utilized. Therefore, each of the adsorption sheets 120a and 120b can be cut out from the temperature-sensitive adhesive sheet in multiple regions. In this case, it is cut out from the temperature-sensitive adhesive sheet as the base material in a smaller size. Therefore, the remaining area of the temperature-sensitive adhesive sheet of the base material becomes larger, the number of cut-out temperature-sensitive adhesive sheets can be increased, and the temperature-sensitive adhesive sheet of the base material can be effectively utilized. Figure 4A and Figure 4B FIG. is an example showing a case where the annular adsorption sheet 120b is cut out in multiple regions. Figure 4A and Figure 4B In, the sheet 121 is cut out by dividing it into multiple arc-shaped regions, and the annular adsorption sheet 120b is formed by arranging the sheets 121 in an annular shape. For example, in Figure 4A , 2 sheets 121 are cut out by dividing it into semi-circular arc-shaped regions, and the annular adsorption sheet 120b is formed by arranging the 2 sheets 121 in an annular shape. In Figure 4B , the sheet 121 is cut out by dividing it into 6 arc-shaped partial regions, and the annular adsorption sheet 120b is formed by arranging the 6 sheets 121 in an annular shape. The arc-shaped sheets 121 can be cut out from one temperature-sensitive adhesive sheet in the same direction. Therefore, the useless area that cannot be used in the adsorption sheet 120b can be reduced. The gap between the sheets 121 is likely to be a temperature singularity point. Therefore, the gap between the sheets 121 is preferably 2 mm or less. In addition, the adsorption sheet 120b preferably has a linear gap formed between the multiple arc-shaped sheets 121, and the sheet 121 is cut out such that the angle θ of the gap between the sheets 121 with respect to the radial direction of the adsorption sheet 120b is 30° to 60°. Thereby, the angle formed by the direction of the gap of the adsorption sheet 120b and the radial direction of the ring assembly 112 is 30° to 60°. Thereby, the adsorption sheet 120b can reduce the influence of the gap between the sheets 121 on the temperature singularity point.

[0056] Return to Figure 2 . The lower surfaces of the adsorption sheets 120a and 120b are bonded to the electrostatic chuck 1111, and the adhesive force on the upper surfaces of the adsorption sheets 120a and 120b can be increased within a range lower than the adhesive force generated by bonding on the lower surface side by changing the temperature. For example, the adsorption sheets 120a and 120b are composed of multiple layers. The upper surface layer is composed of a cold-removing type temperature-sensitive adhesive sheet, and the lower surface layer is an adhesive layer having an adhesive force greater than the adhesive force in the second temperature range of the temperature-sensitive adhesive sheet.

[0057] The electrostatic chuck 1111 is internally provided with an electrostatic electrode 1111b in the central region 111a portion and an electrostatic electrode 1111c in the annular region 111b portion. A DC voltage can be applied from the DC power supplies 114a and 114b to the electrostatic electrodes 1111b and 1111c according to the control of the control unit 2.

[0058] Return to Figure 1 The control unit 2 can control the temperature adjustment unit 116 to control the temperature of the heat transfer medium supplied from the temperature adjustment unit 116, so that the heat transfer medium circulates in the flow path 1110a and the pipe 115, thereby controlling the temperature of the substrate support portion 11.

[0059] When performing plasma processing in the plasma processing chamber 10, the control unit 2 controls the temperature of the heat transfer medium using the temperature adjustment unit 116 to increase the adhesion force of the adsorption sheets 120a and 120b. For example, the control unit 2 controls the temperature of the heat transfer medium supplied from the temperature adjustment unit 116 to control the temperature of the substrate support portion 11 to be in a second temperature range. Then, the control unit 2 controls the DC power supplies 114a and 114b to apply a DC voltage of a specified voltage as an adsorption voltage from the DC power supply 114a to the electrostatic electrode 1111b and a DC voltage of a specified voltage as an adsorption voltage from the DC power supply 114b to the electrostatic electrode 1111c.

[0060] In addition, when replacing at least one of the substrate W and the ring assembly 112, the control unit 2 controls the temperature of the heat transfer medium using the temperature adjustment unit 116 to reduce the adhesion force of the adsorption sheets 120a and 120b. For example, the control unit 2 controls the temperature of the heat transfer medium supplied from the temperature adjustment unit 116 to control the temperature of the substrate support portion 11 to be in a first temperature range. Then, the control unit 2 controls the DC power supplies 114a and 114b to stop applying a DC voltage from the DC power supplies 114a and 114b to the electrostatic electrodes 1111b and 1111c.

[0061] Figure 5 It is a diagram for explaining the improvement of the thermal conductivity of the ring assembly 112 of the embodiment. In Figure 5 It schematically shows the structure of the portion of the substrate support portion 11 for mounting the ring assembly 112.

[0062] During plasma processing, when the temperature of the substrate support portion 11 is within the second temperature range, the adsorption force of the adsorption sheet 120b increases, and the ring assembly 112 can be strongly held. Further, when a DC voltage is applied to the electrostatic electrode 1111c, the ring assembly 112 can be electrostatically adsorbed by the electrostatic chuck 1111. Thus, the ring assembly 112 is in close contact with the adsorption sheet 120b. By bringing the ring assembly 112 into close contact with the adsorption sheet 120b in this way, the interfacial thermal resistance between the ring assembly 112 and the adsorption sheet 120b decreases. Thereby, the heat conduction rate between the ring assembly 112 and the main body portion 111 can be increased. Thus, the ring assembly 112 can efficiently diffuse the heat input from the plasma to the main body portion 111 side.

[0063] On the other hand, when replacing at least one of the substrate W and the ring assembly 112, when the temperature of the substrate support portion 11 is within the first temperature range, the adsorption force of the adsorption sheet 120b decreases. Further, when the application of the DC voltage to the electrostatic electrode 1111c is stopped, the ring assembly 112 can no longer be electrostatically adsorbed by the electrostatic chuck 1111. Thus, the ring assembly 112 can be easily peeled off from the main body portion 111.

[0064] Figure 6 It is a diagram for explaining the improvement of the heat conduction rate of the substrate W of the embodiment. In Figure 6 it schematically shows the structure of the portion of the substrate support portion 11 for placing the substrate W.

[0065] During plasma processing, when the temperature of the substrate support portion 11 is within the second temperature range, the adsorption force of the adsorption sheet 120a increases, and the substrate W can be strongly held. Further, when a DC voltage is applied to the electrostatic electrode 1111b, the substrate W can be electrostatically adsorbed by the electrostatic chuck 1111. Thus, the substrate W is in close contact with the adsorption sheet 120a. By bringing the substrate W into close contact with the adsorption sheet 120a in this way, the interfacial thermal resistance between the substrate W and the adsorption sheet 120a decreases. Thereby, the heat conduction rate between the substrate W and the main body portion 111 can be increased. Thus, the substrate W can efficiently diffuse the heat input from the plasma to the main body portion 111 side.

[0066] On the other hand, when replacing at least one of the substrate W and the ring assembly 112, when the temperature of the substrate support portion 11 is within the first temperature range, the adsorption force of the adsorption sheet 120a decreases. Further, when the application of the DC voltage to the electrostatic electrode 1111b is stopped, the substrate W can no longer be electrostatically adsorbed by the electrostatic chuck 1111. Thus, the substrate W can be easily peeled off from the main body portion 111.

[0067] Here, as a comparative example, an example of the structure of a conventional plasma processing apparatus will be described. In the conventional plasma processing apparatus, in order to improve the heat conductivity between the substrate W, the ring assembly 112, and the main body 111, helium (He) gas is supplied as a heat transfer gas between the substrate W, the ring assembly 112, and the electrostatic chuck 1111.

[0068] Figure 7 FIG. is a diagram schematically showing an example of the structure of a conventional substrate support portion 11. In Figure 7 FIG., the structure of a portion for placing the substrate W in the substrate support portion 11 in the conventional plasma processing apparatus is schematically shown. In the conventional plasma processing apparatus, a plurality of protruding points 111a1 are formed on the upper surface of the electrostatic chuck 1111. The substrate W is supported by the plurality of points 111a1, and a space is formed between the substrate W and the electrostatic chuck 1111. In the conventional plasma processing apparatus, helium gas is supplied as a heat transfer gas to the space between the upper surface of the electrostatic chuck 1111 and the substrate W.

[0069] However, in the conventional plasma processing apparatus, there are effects on plasma processing and risks of discharge caused by leakage of the supplied helium gas from around the substrate W and the ring assembly 112. In addition, in the conventional plasma processing apparatus, a gas pipe for supplying helium gas to the main body 111 needs to be provided. In addition, in the conventional plasma processing apparatus, the thermal resistances of the point 111a1 portion and the helium gas portion between the substrate W and the electrostatic chuck 1111 are different, and thus the in-plane uniformity of the temperature of the substrate W deteriorates. In addition, since the electrostatic chuck 1111 is made of a ceramic component, it is very hard and insufficient in following the warpage of the substrate W, and there is a case where a gap is generated between the electrostatic chuck 1111 and the substrate W, resulting in helium gas leakage. In addition, there is a case where particles are generated due to contact and friction between the substrate W, the ring assembly 112, and the electrostatic chuck 1111.

[0070] In the plasma processing apparatus 1 of the present embodiment, adsorption sheets 120a and 120b are provided between the substrate W and the ring assembly 112 and the electrostatic chuck 1111. Moreover, in the plasma processing apparatus 1 of the present embodiment, a DC voltage is applied to the electrostatic electrodes 1111b and 1111c to electrostatically adsorb the substrate W and the ring assembly 112. Thereby, the plasma processing apparatus 1 of the present embodiment can improve the heat conductivity between the substrate W and the ring assembly 112 and the main body portion 111. In addition, since it is not necessary to supply helium gas between the substrate W and the ring assembly 112 and the electrostatic chuck 1111, leakage of helium gas does not occur, and the risk of discharge can be reduced. In addition, since the substrate W and the ring assembly 112 and the electrostatic chuck 1111 are in surface contact with the adsorption sheets 120a and 120b, the in-plane uniformity of the temperature of the substrate W and the ring assembly 112 can be improved. In addition, since the substrate W and the ring assembly 112 are disposed on the adsorption sheets 120a and 120b, contact between the substrate W and the ring assembly 112 and the electrostatic chuck 1111 can be suppressed, and the risk of particle generation can be reduced.

[0071] [Control method]

[0072] Figure 8 It is a flowchart showing an example of the flow of a control process of a process including the control method of the embodiment. Figure 8 The illustrated process can be implemented by the processing unit 2a1 of the control unit 2 reading a program from the storage unit 2a2, executing the read program, and controlling each part of the plasma processing apparatus 1 via the communication interface 2a3. Figure 8 The illustrated process is executed, for example, when the substrate W is placed on the central region 111a of the substrate support portion 11 by a transfer arm (not shown) and plasma processing is performed in the plasma processing chamber 10.

[0073] The control unit 2 controls the temperature of the heat transfer medium using the temperature adjustment unit 116 to increase the adhesion force of the adsorption sheets 120a and 120b (S10). For example, the control unit 2 controls the temperature of the heat transfer medium supplied from the temperature adjustment unit 116 to control the temperature of the substrate support portion 11 to be in a second temperature range.

[0074] The control unit 2 controls the DC power supplies 114a and 114b, applies a DC voltage from the DC power supply 114a to the electrostatic electrode 1111b, and applies a DC voltage from the DC power supply 114b to the electrostatic electrode 1111c (S11).

[0075] The control unit 2 performs plasma etching (S12). For example, the control unit 2 controls the exhaust system 40 to evacuate the inside of the plasma processing chamber 10 to a specified degree of vacuum. The control unit 2 controls the gas supply unit 20 to introduce a processing gas for etching from the gas supply unit 20 into the plasma processing space 10s. The control unit 2 controls the power supply 30 to supply electric power from the power supply 30 in cooperation with the introduction of the processing gas to generate plasma inside the plasma processing chamber 10 and perform etching on the substrate W.

[0076] When the etching of the substrate W is completed, the control unit 2 controls the temperature of the heat transfer medium using the temperature adjustment unit 116 to reduce the adhesion force of the adsorption sheets 120a and 120b (S13). For example, the control unit 2 controls the temperature of the heat transfer medium supplied from the temperature adjustment unit 116 to control the temperature of the substrate support portion 11 to be within a first temperature range.

[0077] The control unit 2 controls the DC power supplies 114a and 114b to stop applying DC voltage from the DC power supplies 114a and 114b to the electrostatic electrodes 1111b and 1111c (S14), ending the processing shown in this flowchart. The substrate W after etching is sent out of the plasma processing apparatus 1 by a transfer arm (not shown).

[0078] In addition, in the above-described embodiment, the case where the adsorption sheets 120a and 120b are arranged in the central region 111a for placing the substrate W and the annular region 111b for placing the ring assembly 112 has been described as an example. However, it is not limited thereto. The plasma processing apparatus 1 may be configured to arrange only one of the adsorption sheets 120a and 120b. For example, the plasma processing apparatus 1 may arrange only the adsorption sheet 120b in the annular region 111b to hold the ring assembly 112. Figure 9A is a diagram schematically showing an example of the process of holding the ring assembly 112. In Figure 9A , the respective processes up to the configuration and replacement of the new ring assembly 112 are sequentially shown as processes (1) to (6). Figure 9B is a diagram showing an example of the temperature change of the adsorption sheet 120b. In Figure 9B the temperature change of the adsorption sheet 120b in the processes (1) to (6) of Figure 9A is schematically shown.

[0079] In step (1), the plasma processing chamber 10 is opened, and the carrier ring assembly 112 is placed. The control unit 2 controls the temperature of the heat transfer medium using the temperature adjustment unit 116 to reduce the adhesion force of the adsorption sheet 120b. For example, in step (1), control is performed so that the temperature of the adsorption sheet 120b becomes a first temperature range lower than the switching temperature. In step (2), the carrier ring assembly 112 is placed on the adsorption sheet 120b. In step (2), control is performed so that the temperature of the adsorption sheet 120b becomes the first temperature range. The adsorption of the adsorption sheet 120b to the carrier ring assembly 112 becomes a weak state.

[0080] In step (3), the control unit 2 controls the temperature of the heat transfer medium using the temperature adjustment unit 116 to increase the adhesion force of the adsorption sheet 120b. For example, in step (3), control is performed so that the temperature of the adsorption sheet 120b becomes a second temperature range higher than the switching temperature. In addition, the control unit 2 controls the DC power supply 114b, and applies a DC voltage from the DC power supply 114b to the electrostatic electrode 1111c. Thereby, the carrier ring assembly 112 and the adsorption sheet 120b are in close contact. In step (4), plasma processing is performed. In step (4), control is performed so that the temperature of the adsorption sheet 120b becomes the second temperature range. In step (4), due to the heat input from the plasma, the temperature of the adsorption sheet 120b rises compared to step (3). In step (4), since the carrier ring assembly 112 and the adsorption sheet 120b are in close contact, the heat of the carrier ring assembly 112 can be efficiently diffused to the main body portion 111 side.

[0081] Step (5) represents the preparation stage for replacing the carrier ring assembly 112. In step (5), the control unit 2 controls the temperature of the heat transfer medium using the temperature adjustment unit 116 to reduce the adhesion force of the adsorption sheet 120b. For example, in step (5), control is performed so that the temperature of the adsorption sheet 120b becomes the first temperature range. In addition, the control unit 2 controls the DC power supply 114b, and stops applying the DC voltage from the DC power supply 114b to the electrostatic electrode 1111c. Thereby, the adsorption of the adsorption sheet 120b to the carrier ring assembly 112 becomes a weak state. In step (6), the plasma processing chamber 10 is opened, and the carrier ring assembly 112 is taken out. In step (6), since the adsorption of the adsorption sheet 120b to the carrier ring assembly 112 is in a weak state, the carrier ring assembly 112 can be easily peeled off from the adsorption sheet 120b.

[0082] In addition, in the above-described embodiment, an example was described in which the lower surfaces of the adsorption sheets 120a and 120b are bonded to the electrostatic chuck 1111, and the adhesive force on the upper surfaces of the adsorption sheets 120a and 120b can be increased within a range lower than the adhesive force on the lower surface side by changing the temperature. However, it is not limited thereto. It may be that the upper surface of the adsorption sheet 120a is bonded to the substrate W, and the adhesive force on the lower surface of the adsorption sheet 120a can be increased within a range lower than the adhesive force generated by bonding on the upper surface side by changing the temperature. In addition, it may be that the upper surface of the adsorption sheet 120b is bonded to the ring assembly 112, and the adhesive force on the lower surface of the adsorption sheet 120b can be increased within a range lower than the adhesive force generated by bonding on the upper surface side by changing the temperature. For example, the adsorption sheets 120a and 120b are composed of multiple layers, the layer on the lower surface is composed of a cold-removing type thermosensitive adhesive sheet, and the layer on the upper surface is an adhesive layer having an adhesive force greater than the adhesive force in the second temperature range of the thermosensitive adhesive sheet. In this case, the adsorption sheets 120a and 120b are attached to and detached from the substrate W and the ring assembly 112 outside the plasma processing apparatus 1. For example, the module of the transfer system for transferring the substrate W is configured to be able to attach and detach the adsorption sheet 120a with respect to the substrate W.

[0083] In addition, in the above-described embodiment, an example was described in which the electrostatic electrode 1111c is disposed inside the annular region 111b portion of the electrostatic chuck 1111. However, it is not limited thereto. The electrostatic chuck 1111 may also have a structure without the electrostatic electrode 1111c.

[0084] In addition, in the above-described embodiment, an example was described in which the substrate W and the ring assembly 112 are adsorbed and held by the adsorption sheets 120a and 120b whose adhesive force can be changed by changing the temperature. However, it is not limited thereto. It may also be that a component for constituting the plasma processing apparatus 1 is adsorbed and held by an adsorption sheet whose adhesive force can be changed by changing the temperature. For example, the holding of the shower head 13 may also use an adsorption sheet. Figure 10 It is a diagram showing an example of the schematic structure near the top of the upper part of the plasma processing chamber 10. In Figure 10The top plate 10b that constitutes the upper part of the plasma processing chamber 10 is shown. The showerhead 13 includes a base plate 150 and a shower plate 151. The base plate 150 is flatly formed of a conductive member and functions as an upper electrode. In order to introduce a processing gas into the plasma processing chamber 10, the shower plate 151 is formed with gas flow paths such as a gas diffusion chamber and a plurality of gas inlets (not shown). The base plate 150 is disposed on the lower surface of the top plate 10b. The shower plate 151 is disposed on the lower surface of the base plate 150. In addition, gas flow paths may also be formed in the base plate 150. For example, a gas diffusion chamber may be formed in the base plate 150, and holes may be formed in the base plate 150 that communicate with the gas diffusion chamber corresponding to the respective gas inlets of the shower plate 151. An adsorption sheet 152a is provided between the top plate 10b and the base plate 150. An adsorption sheet 152b is provided between the base plate 150 and the shower plate 151. The adhesive force of the adsorption sheets 152a and 152b can be changed by changing the temperature. For example, the adsorption sheets 152a and 152b are composed of cold-removing type temperature-sensitive adhesive sheets. The base plate 150 is adsorbed and held on the top plate 10b by the adsorption sheet 152a. The shower plate 151 is adsorbed and held on the base plate 150 by the adsorption sheet 152b. The periphery of the showerhead 13 is supported by a support portion 153. The support portion 153 is fixed to the top plate 10b by bolts 154 at multiple locations. During plasma processing, the temperature of the showerhead 13 rises due to heat input from the plasma. As a result, the adsorption force of the adsorption sheets 152a and 152b increases, and the interfacial thermal resistance between the base plate 150 and the shower plate 151, and between the top plate 10b and the base plate 150 decreases. Thus, the showerhead 13 can efficiently diffuse the heat input from the plasma to the top plate 10b side. Additionally, for example, when maintaining the showerhead 13, the plasma processing chamber 10 is made into a normal temperature of 50 °C or less, the plasma processing chamber 10 is opened, and the showerhead 13 is taken out. Since the adsorption sheets 152a and 152b are in a weakly adsorbed state at a normal temperature of 50 °C or less, the showerhead 13 can be simply peeled off from the top plate 10b, and the base plate 150 and the shower plate 151 can be simply separated.

[0085] Above, the embodiments have been described. As described above, the substrate processing system of the embodiment includes a plasma processing chamber 10, a susceptor 1110, a temperature adjustment unit (pipe 115 and temperature adjustment unit 116), an electrostatic chuck 1111, a first electrostatic electrode layer (electrostatic electrode 1111b), a second electrostatic electrode layer (electrostatic electrode 1111c), a first electrostatic adsorption power supply (DC power supply 114a), a second electrostatic adsorption power supply (DC power supply 114b), and adsorption sheets (adsorption sheets 120a, 120b). The susceptor 1110 is disposed in the plasma processing chamber 10, and a flow path 1110a for a heat transfer medium is formed inside the susceptor 1110. The temperature adjustment unit can circulate the heat transfer medium in the flow path 1110a and can adjust the temperature of the heat transfer medium. The electrostatic chuck 1111 is disposed on the upper surface of the susceptor 1110 and includes a substrate placement portion (portion of the central region 111a) capable of placing the substrate W and an edge ring placement portion (portion of the annular region 111b) capable of placing an edge ring (ring assembly 112) surrounding the substrate W. The first electrostatic electrode layer is disposed inside the substrate placement portion. The second electrostatic electrode layer is disposed inside the edge ring placement portion. The first electrostatic adsorption power supply can be electrically connected to the first electrostatic electrode layer. The second electrostatic adsorption power supply can be electrically connected to the second electrostatic electrode layer. The adsorption sheets are disposed between the substrate placement portion and the substrate W placed on the substrate placement portion and / or between the edge ring placement portion and the edge ring placed on the edge ring placement portion, and the adhesive force of the adsorption sheets can be changed by changing the temperature. Thus, the substrate processing system can increase the heat conductivity between at least any one of the substrate W and the edge ring and the placement table.

[0086] In addition, the substrate processing system of the embodiment further includes a control unit 2. The control unit 2 can perform control to execute a process including the following steps: when performing plasma processing in the plasma processing chamber 10, a step of controlling the temperature of the heat transfer medium by the temperature adjustment unit to increase the adhesive force of the adsorption sheets; and a step of applying an adsorption voltage from the first electrostatic adsorption power supply to the first electrostatic electrode layer and applying an adsorption voltage from the second electrostatic adsorption power supply to the second electrostatic electrode layer. Thus, the substrate processing system of the embodiment can increase the heat conductivity between at least any one of the substrate W and the edge ring and the placement table when performing plasma processing.

[0087] In addition, the control unit 2 can perform control to execute a process including the following steps: when at least one of the substrate W and the edge ring is replaced, a step of controlling the temperature of the heat transfer medium by the temperature adjustment unit to reduce the adhesion force of the adsorption sheet; and when the substrate is replaced, a step of stopping the application of the adsorption voltage from the first electrostatic adsorption power supply to the first electrostatic electrode layer, and when the edge ring is replaced, a step of stopping the application of the adsorption voltage from the second electrostatic adsorption power supply to the second electrostatic electrode layer. Thus, in the substrate processing system of the embodiment, when at least one of the substrate W and the edge ring is replaced, the substrate W and the edge ring can be easily taken out.

[0088] Alternatively, the adhesion force of the adsorption sheet may decrease within a first temperature range and increase within a second temperature range higher than the first temperature range. Thus, in the substrate processing system of the embodiment, by setting the adsorption sheet to the second temperature range, the heat conduction rate between at least one of the substrate W and the edge ring and the mounting table can be increased. In addition, in the substrate processing system of the embodiment, by setting the adsorption sheet to the first temperature range, the substrate W and the edge ring can be easily taken out.

[0089] Alternatively, the adhesion force of the adsorption sheet may increase within a first temperature range and decrease within a second temperature range higher than the first temperature range. Thus, in the substrate processing system of the embodiment, by setting the adsorption sheet to the first temperature range, the heat conduction rate between at least one of the substrate W and the edge ring and the mounting table can be increased. In addition, in the substrate processing system of the embodiment, by setting the adsorption sheet to the second temperature range, the substrate W and the edge ring can be easily taken out.

[0090] In addition, a flow path 1110a is formed in a region that at least partially overlaps with the region where the adsorption sheet is disposed when viewed from above the base 1110. Thus, in the substrate processing system of the embodiment, the temperature of the heat transfer medium can be easily conducted to the adsorption sheet, and the temperature of the adsorption sheet can be changed by changing the temperature of the heat transfer medium.

[0091] In addition, the adsorption sheet is divided into a plurality of regions. Thus, when cutting out the adsorption sheet from the thermosensitive adhesive sheet, the useless region that cannot be used as the adsorption sheet can be reduced.

[0092] In addition, the gap between the plurality of regions of the adsorption sheet is 2 mm or less. Thus, the influence of the gap on the temperature singularity point can be reduced.

[0093] In addition, the adsorption sheet (adsorption sheet 120b) disposed between the edge ring mounting portion and the edge ring is divided into a plurality of arc-shaped regions when viewed from above, and a linear gap is formed between the plurality of arc-shaped regions, and the angle formed by the direction of the gap and the radial direction of the edge ring is 30° to 60°. Thus, the influence of the gap on the temperature singularity point can be reduced.

[0094] Alternatively, the adsorption sheet (adsorption sheet 120a) may be bonded to the substrate placement portion, and the adsorption force of the surface on the substrate W side of the adsorption sheet (adsorption sheet 120a) can be varied within a range lower than the adhesive force on the substrate placement portion side by changing the temperature. The adsorption sheet (adsorption sheet 120b) may be bonded to the edge ring placement portion, and the adhesive force of the surface on the edge ring side of the adsorption sheet (adsorption sheet 120b) can be varied within a range lower than the adhesive force on the edge ring placement portion side by changing the temperature. Thus, it is possible to peel off the substrate W side and the edge ring side in a state where the adsorption sheets are bonded to the substrate placement portion and the edge ring placement portion.

[0095] Alternatively, the adsorption sheet (adsorption sheet 120a) may be bonded to the substrate W, and the adhesive force of the surface on the substrate placement portion side of the adsorption sheet (adsorption sheet 120a) can be varied within a range lower than the adhesive force on the substrate W side by changing the temperature. The adsorption sheet (adsorption sheet 120b) may be bonded to the edge ring, and the adhesive force of the surface on the edge ring placement portion side of the adsorption sheet (adsorption sheet 120b) can be varied within a range lower than the adhesive force on the edge ring side by changing the temperature. Thus, it is possible to peel off the substrate placement portion side and the edge ring placement portion side in a state where the adsorption sheets are bonded to the substrate W and the edge ring.

[0096] In addition, the embodiments disclosed herein should be considered illustrative rather than restrictive in all respects. In fact, the above embodiments can be implemented in various ways. Further, the above embodiments can be omitted, replaced, or changed in various ways without departing from the appended claims and their gist.

[0097] In addition, in the above embodiments, the case where a capacitively coupled plasma (CCP) is used as an example of a plasma source has been described. However, the technology of the present invention is not limited thereto. As the plasma source, for example, an inductively coupled plasma (ICP), a microwave-excited surface wave plasma (SWP), an electron cyclotron resonance plasma (ECP), or a helicon wave-excited plasma (HWP) may also be used.

[0098] Alternatively, in the above embodiments, the case where plasma processing such as plasma etching of the substrate W is used as the substrate processing has been described, but it is not limited thereto. The substrate processing may be any processing as long as it generates heat input to the substrate W. For example, the substrate processing may also be a film-forming process, a modification process, or a heat treatment such as ashing.

[0099] In addition, in the above-described embodiment, a plasma processing apparatus for performing plasma processing has been described as an example. However, the technology of the present invention is not limited thereto. The technology of the present invention can also be applied to substrate processing apparatuses such as plasma processing apparatuses, film forming apparatuses, and modification apparatuses that perform substrate processing on a substrate W.

[0100] In addition, regarding the above-described embodiment, the following appended notes are also disclosed.

[0101] (Appended Note 1)

[0102] A plasma processing apparatus, characterized by comprising:

[0103] A plasma processing chamber;

[0104] A susceptor disposed in the plasma processing chamber, and a flow path for a heat transfer medium is formed inside the susceptor;

[0105] A temperature adjustment unit that can circulate the heat transfer medium in the flow path and can adjust the temperature of the heat transfer medium;

[0106] An electrostatic chuck disposed on the upper surface of the susceptor, which includes a substrate placement portion capable of placing a substrate and an edge ring placement portion capable of placing an edge ring surrounding the substrate;

[0107] A first electrostatic electrode layer disposed in the substrate placement portion;

[0108] A second electrostatic electrode layer disposed in the edge ring placement portion;

[0109] A first electrostatic adsorption power source capable of being electrically connected to the first electrostatic electrode layer;

[0110] A second electrostatic adsorption power source capable of being electrically connected to the second electrostatic electrode layer; and

[0111] An adsorption sheet disposed between the substrate placement portion and the substrate placed on the substrate placement portion and / or between the edge ring placement portion and the edge ring placed on the edge ring placement portion, and the adhesive force of the adsorption sheet can be changed by changing the temperature.

[0112] (Appended Note 2)

[0113] The plasma processing apparatus according to Appended Note 1, characterized in that:

[0114] It further includes a control unit,

[0115] The control unit can control the plasma processing apparatus to perform a process including the following steps:

[0116] When performing plasma processing in the plasma processing chamber, a step of controlling the temperature of the heat transfer medium by using the temperature adjustment unit to increase the adhesion force of the adsorption sheet; and

[0117] A step of applying an adsorption voltage to the first electrostatic electrode layer from the first electrostatic adsorption power supply and applying an adsorption voltage to the second electrostatic electrode layer from the second electrostatic adsorption power supply.

[0118] (Supplementary Note 3)

[0119] The plasma processing apparatus according to Supplementary Note 2, characterized in that:

[0120] The control unit can control the plasma processing apparatus to perform a process including the following steps:

[0121] When replacing at least one of the substrate and the edge ring, a step of controlling the temperature of the heat transfer medium by using the temperature adjustment unit to decrease the adhesion force of the adsorption sheet; and

[0122] When replacing the substrate, stop applying the adsorption voltage from the first electrostatic adsorption power supply to the first electrostatic electrode layer, and when replacing the edge ring, stop applying the adsorption voltage from the second electrostatic adsorption power supply to the second electrostatic electrode layer.

[0123] (Supplementary Note 4)

[0124] The plasma processing apparatus according to any one of Supplementary Notes 1 to 3, characterized in that:

[0125] The adhesion force of the adsorption sheet decreases within a first temperature range, and the adhesion force of the adsorption sheet increases within a second temperature range higher than the first temperature range.

[0126] (Supplementary Note 5)

[0127] The plasma processing apparatus according to any one of Supplementary Notes 1 to 3, characterized in that:

[0128] The adhesion force of the adsorption sheet increases within a first temperature range, and the adhesion force of the adsorption sheet decreases within a second temperature range higher than the first temperature range.

[0129] (Supplementary Note 6)

[0130] The plasma processing apparatus according to any one of Supplementary Notes 1 to 5, characterized in that:

[0131] The flow path is formed in a region where at least a part of the base overlaps with the region where the adsorption sheet is disposed when viewed from above.

[0132] (Supplementary Note 7)

[0133] The plasma processing apparatus according to any one of Appendices 1 to 6, characterized in that:

[0134] The adsorption sheet is divided into a plurality of regions.

[0135] (Appendix 8)

[0136] The plasma processing apparatus according to Appendix 7, characterized in that:

[0137] The gap between the plurality of regions of the adsorption sheet is 2 mm or less.

[0138] (Appendix 9)

[0139] The plasma processing apparatus according to Appendix 7, characterized in that:

[0140] The adsorption sheet disposed between the edge ring placement portion and the edge ring is divided into a plurality of arc-shaped regions in a plan view, and a linear gap is formed between the plurality of arc-shaped regions, and the angle formed by the direction of the gap and the radial direction of the edge ring is 30° to 60°.

[0141] (Appendix 10)

[0142] The plasma processing apparatus according to any one of Appendices 1 to 9, characterized in that:

[0143] The adsorption sheet is bonded to the substrate placement portion, and the adsorption force of the surface of the adsorption sheet on the substrate side can be changed within a range lower than the adhesive force on the substrate placement portion side by changing the temperature, or the adsorption sheet is bonded to the edge ring placement portion, and the adhesive force of the surface of the adsorption sheet on the edge ring side can be changed within a range lower than the adhesive force on the edge ring placement portion side by changing the temperature.

[0144] (Appendix 11)

[0145] The plasma processing apparatus according to any one of Appendices 1 to 9, characterized in that:

[0146] The adsorption sheet is bonded to the substrate, and the adhesive force of the surface of the adsorption sheet on the substrate placement portion side can be changed within a range lower than the adhesive force on the substrate side by changing the temperature, or the adsorption sheet is bonded to the edge ring, and the adhesive force of the surface of the adsorption sheet on the edge ring placement portion side can be changed within a range lower than the adhesive force on the edge ring side by changing the temperature.

[0147] (Appendix 12)

[0148] A control method, which is a control method for a plasma processing apparatus, characterized in that:

[0149] The plasma processing apparatus includes:

[0150] A plasma processing chamber;

[0151] A susceptor disposed in the plasma processing chamber, and a flow path for a heat transfer medium is formed inside the susceptor;

[0152] A temperature adjusting unit that can circulate the heat transfer medium in the flow path and can adjust the temperature of the heat transfer medium;

[0153] An electrostatic chuck disposed on the upper surface of the susceptor, which includes a substrate placement portion capable of placing a substrate and an edge ring placement portion capable of placing an edge ring surrounding the substrate;

[0154] A first electrostatic electrode layer disposed in the substrate placement portion;

[0155] A second electrostatic electrode layer disposed in the edge ring placement portion;

[0156] A first electrostatic adsorption power source capable of being electrically connected to the first electrostatic electrode layer;

[0157] A second electrostatic adsorption power source capable of being electrically connected to the second electrostatic electrode layer; and

[0158] An adsorption sheet, which is disposed between the substrate placement portion and the substrate placed on the substrate placement portion, and / or between the edge ring placement portion and the edge ring placed on the edge ring placement portion, and can change the adhesion force of the adsorption sheet by changing the temperature,

[0159] The control method of the plasma processing apparatus includes:

[0160] When performing plasma processing in the plasma processing chamber, a step of controlling the temperature of the heat transfer medium by using the temperature adjusting unit to increase the adhesion force of the adsorption sheet; and

[0161] A step of applying an adsorption voltage to the first electrostatic electrode layer from the first electrostatic adsorption power source, or applying an adsorption voltage to the first electrostatic electrode layer from the second electrostatic adsorption power source.

[0162] Description of reference numerals

[0163] 1 Plasma processing apparatus, 2 Control unit, 2a Computer, 2a1 Processing unit, 2a2 Storage unit, 2a3 Communication interface, 10 Plasma processing chamber, 10a Side wall, 10b Top plate, 10e Gas discharge port, 10s Plasma processing space, 11 Substrate support, 13 Shower head, 13a Gas supply port, 13b Gas diffusion chamber, 13c Gas introduction port, 20 Gas supply unit, 21 Gas source, 22 Flow controller, 30 Power supply, 31 Power supply, 31a First RF generation unit, 31b Second RF generation unit, 32 Power supply, 32a First DC generation unit, 32a Second DC generation unit, 32b Second DC generation unit, 40 Exhaust system, 111 Main body, 111a Central region, 111a1 Point, 111b Annular region, 112 Ring assembly, 113a Wiring, 113b Wiring, 114a DC power supply, 114b DC power supply, 115 Pipe, 116 Temperature adjustment unit, 120a Adsorption sheet, 120b Adsorption sheet, 121 Sheet, 150 Substrate plate, 151 Shower plate, 152a Adsorption sheet, 152b Adsorption sheet, 153 Support, 154 Bolt, 1110 Base, 1110a Flow path, 1111 Electrostatic chuck, 1111a Ceramic component, 1111b Electrostatic electrode, 1111c Electrostatic electrode, W Substrate.

Claims

1. A plasma processing apparatus, characterized in that, Comprising: A plasma processing chamber; A susceptor disposed in the plasma processing chamber, and a flow path for a heat transfer medium is formed inside the susceptor; A temperature adjusting unit capable of circulating the heat transfer medium in the flow path and adjusting the temperature of the heat transfer medium; An electrostatic chuck disposed on the upper surface of the susceptor, which includes a substrate mounting portion capable of mounting a substrate and an edge ring mounting portion capable of mounting an edge ring surrounding the substrate; A first electrostatic electrode layer disposed in the substrate mounting portion; A second electrostatic electrode layer disposed in the edge ring mounting portion; A first electrostatic adsorption power source capable of being electrically connected to the first electrostatic electrode layer; A second electrostatic adsorption power source capable of being electrically connected to the second electrostatic electrode layer; And An adsorption sheet disposed between the substrate mounting portion and the substrate mounted on the substrate mounting portion, and / or between the edge ring mounting portion and the edge ring mounted on the edge ring mounting portion, and capable of changing the adhesion force of the adsorption sheet by changing the temperature.

2. The plasma processing apparatus according to claim 1, wherein: It further includes a control unit, The control unit can control the plasma processing apparatus to perform a process including the following steps: When performing plasma processing in the plasma processing chamber, using the temperature adjusting unit to control the temperature of the heat transfer medium to increase the adhesion force of the adsorption sheet; And Applying an adsorption voltage from the first electrostatic adsorption power source to the first electrostatic electrode layer and applying an adsorption voltage from the second electrostatic adsorption power source to the second electrostatic electrode layer.

3. The plasma processing apparatus according to claim 2, wherein: The control unit can control the plasma processing apparatus to perform a process including the following steps: When replacing at least one of the substrate and the edge ring, using the temperature adjusting unit to control the temperature of the heat transfer medium to reduce the adhesion force of the adsorption sheet; And When replacing the substrate, stopping applying the adsorption voltage from the first electrostatic adsorption power source to the first electrostatic electrode layer, and when replacing the edge ring, stopping applying the adsorption voltage from the second electrostatic adsorption power source to the second electrostatic electrode layer.

4. The plasma processing apparatus according to claim 1, wherein: The adhesion force of the adsorption sheet decreases within a first temperature range, and the adhesion force of the adsorption sheet increases within a second temperature range higher than the first temperature range.

5. The plasma processing apparatus according to claim 1, wherein: The adhesion force of the adsorption sheet increases within a first temperature range, and the adhesion force of the adsorption sheet decreases within a second temperature range higher than the first temperature range.

6. The plasma processing apparatus according to claim 1, wherein: The flow path is formed in a region where at least a part of the susceptor overlaps with the region where the adsorption sheet is disposed when viewed from above.

7. The plasma processing apparatus according to claim 1, wherein: The adsorption sheet is divided into a plurality of regions.

8. The plasma processing apparatus according to claim 7, wherein: The gap between the plurality of regions of the adsorption sheet is 2 mm or less.

9. The plasma processing apparatus according to claim 7, wherein: The adsorption sheet disposed between the edge ring mounting portion and the edge ring is divided into a plurality of arc-shaped regions in a plan view, and a linear gap is formed between the plurality of arc-shaped regions, and the angle formed by the direction of the gap and the radial direction of the edge ring is 30° to 60°.

10. The plasma processing apparatus according to claim 1, wherein: The adsorption sheet is bonded to the substrate mounting portion, and the adsorption force of the surface on the substrate side of the adsorption sheet can be changed within a range lower than the adhesive force on the substrate mounting portion side by changing the temperature, or the adsorption sheet is bonded to the edge ring mounting portion, and the adhesive force of the surface on the edge ring side of the adsorption sheet can be changed within a range lower than the adhesive force on the edge ring mounting portion side by changing the temperature.

11. The plasma processing apparatus according to claim 1, wherein: The adsorption sheet is bonded to the substrate, and the adhesive force of the surface on the substrate mounting portion side of the adsorption sheet can be changed within a range lower than the adhesive force on the substrate side by changing the temperature, or the adsorption sheet is bonded to the edge ring, and the adhesive force of the surface on the edge ring mounting portion side of the adsorption sheet can be changed within a range lower than the adhesive force on the edge ring side by changing the temperature.

12. A control method, which is a control method of a plasma processing apparatus, wherein: The plasma processing apparatus includes: A plasma processing chamber; A pedestal disposed in the plasma processing chamber, and a flow path for a heat transfer medium is formed inside the pedestal; A temperature adjusting unit capable of circulating the heat transfer medium in the flow path and adjusting the temperature of the heat transfer medium; An electrostatic chuck disposed on the upper surface of the pedestal, which includes a substrate mounting portion capable of mounting a substrate and an edge ring mounting portion capable of mounting an edge ring surrounding the substrate; A first electrostatic electrode layer disposed in the substrate mounting portion; A second electrostatic electrode layer disposed in the edge ring mounting portion; A first electrostatic adsorption power supply capable of being electrically connected to the first electrostatic electrode layer; A second electrostatic adsorption power supply capable of being electrically connected to the second electrostatic electrode layer; and An adsorption sheet disposed between the substrate mounting portion and the substrate mounted on the substrate mounting portion, and / or between the edge ring mounting portion and the edge ring mounted on the edge ring mounting portion, and the adhesive force of the adsorption sheet can be changed by changing the temperature, The control method of the plasma processing apparatus includes: When performing plasma processing in the plasma processing chamber, a step of controlling the temperature of the heat transfer medium by the temperature adjusting unit to increase the adhesive force of the adsorption sheet; and A step of applying an adsorption voltage to the first electrostatic electrode layer from the first power source for electrostatic adsorption, or applying an adsorption voltage to the second electrostatic electrode layer from the second power source for electrostatic adsorption.

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