Magnetron sputtering cabin escape particle capturing cover and method

Abstract

The invention belongs to the technical field of magnetron sputtering equipment, and discloses a magnetron sputtering cabin escape particle capturing cover and method, and the magnetron sputtering cabin escape particle capturing cover comprises a sputtering cabin body and a capturing cover body arranged in an inner cavity of the sputtering cabin body; a target material is arranged at the top of an inner cavity of the sputtering cabin, a substrate bracket for placing a workpiece to be coated is arranged at the bottom of the inner cavity, a suspension bracket is arranged on the substrate bracket, a hollow grid collecting cover is clamped on the suspension bracket, and the collecting cover body is arranged at the upper end of the hollow grid collecting cover; the trapping cover body comprises a gradient outer layer, a gradient middle layer and a gradient inner layer which are sequentially arranged from outside to inside, through the gradient structure of the trapping cover body, physical field cooperation and PLC dynamic control, the efficient trapping and secondary escape prevention effects of escape particles are achieved, meanwhile, the rapid maintenance efficiency is improved, and the service life of the trapping cover body is prolonged. And the problems of efficiency and potential safety hazards of a traditional cleaning mode are solved, the working efficiency is improved, dust occupational injuries are reduced, the quality is improved, and the production cost is reduced.

Description

Technical Field

[0001] The present invention belongs to the technical field of magnetron sputtering equipment, and particularly relates to a capture cover and method for escape particles in a magnetron sputtering chamber. Background Technique

[0002] The magnetron sputtering reaction is a type of physical vapor deposition reaction, usually carried out in a vacuum chamber. A target is fixed at the top of the chamber, and a magnet is installed on the back of the target. By enhancing the ability to confine electrons through a magnetic field, gases such as argon are introduced between the substrate and the target, and a negative voltage is applied to the target, causing the gas to ionize and generate plasma. Argon ions impact the target to generate particles such as atoms or ions of the target material. These particles are sputtered and deposited on the substrate to finally form the required film layer. Magnetron sputtering (PVD) is to use energetic particles to bombard the target surface in a high-vacuum chamber, so that the bombarded particles are deposited on one or both sides of the substrate. The sputtering process has become the main choice for the dry surface treatment method of materials such as composite copper foils and composite functional films;

[0003] In addition to depositing metal thin films, the magnetron sputtering reaction can also be used for the deposition of metal oxides (such as titanium oxide, tantalum oxide, silicon dioxide, etc.). When depositing metal oxides, in addition to the sputtering gas (argon) in the chamber, a reaction gas (such as oxygen) also needs to be introduced simultaneously;

[0004] However, the existing magnetron sputtering in the prior art still has the following deficiencies:

[0005] 1. Sputtered particles escape. The sputtered particles adhere to the surfaces such as the chamber wall, anode plate, and target base, triggering abnormal discharge, resulting in product perforation, charring, and coating peeling;

[0006] 2. The existing methods for intercepting ion escape use fixed baffles or simple filters, with low interception efficiency. Moreover, it is inevitable that the intercepted particles escape again due to thermal vibration or air flow disturbance. Even with the installation of baffles and other trapping aids, due to the special structure and function of the anode plate, adverse effects and deficiencies such as electric field interference, heat dissipation obstruction, arc risk, and particle rebound cannot be avoided.

[0007] Therefore, we propose a capture cover and method for escape particles in a magnetron sputtering chamber to solve the problems existing in the prior art, provide a cover-type active induction capture cover, and through gradient structure, physical field coordination, and PLC dynamic control, achieve efficient capture of escape particles, improve the interception rate, prevent secondary escape, and enable rapid maintenance, solve the efficiency and safety hazard problems of traditional cleaning methods, improve work efficiency, reduce dust occupational injuries, improve quality, and reduce production costs. Summary of the Invention

[0008] The object of the present invention is to provide a magnetic sputtering chamber escape particle capture cover and method to solve the problems of sputtered particle escape, complex sputtered particle cleaning process, and particle interception limitation in the prior art mentioned in the above background art.

[0009] To achieve the above object, the present invention adopts the following technical solutions:

[0010] A magnetic sputtering chamber escape particle capture cover, comprising:

[0011] A sputtering chamber body, and a capture cover body disposed in the inner cavity of the sputtering chamber;

[0012] A target is disposed at the top of the inner cavity of the sputtering chamber body, and a substrate support for placing the workpiece to be coated is disposed at the bottom of the inner cavity. A suspension support is disposed on the substrate support, and a hollow grid collection cover is clamped on the suspension support. The capture cover body is disposed at the upper end of the hollow grid collection cover;

[0013] The capture cover body includes a gradient outer layer, a gradient middle layer, and a gradient inner layer sequentially disposed from outside to inside. An anti-backward escape barb-shaped nano-groove is disposed inside the gradient inner layer. The pore number of the gradient outer layer, the pore number of the gradient middle layer, and the pore number of the gradient inner layer increase in sequence. A radially radiating flow guide groove is disposed outside the gradient outer layer.

[0014] Further, the capture cover body is mainly composed of a nickel-based alloy. A silicon carbide ceramic layer is sprayed on the outside of the capture cover body, a hafnium oxide active layer is sprayed on the inside of the capture cover body, and an insulating layer is sprayed on the surface of the hollow grid collection cover.

[0015] Further, the temperature tolerance of the capture cover body is 800 °C, the hardness of the silicon carbide ceramic layer is greater than 2000 HV, and the number of times the hafnium oxide active layer can be regenerated by high-temperature annealing is greater than 50 times.

[0016] Further, the gradient outer layer is a 100-mesh sparse grid, the gradient middle layer is a 200-mesh medium-density grid, and the gradient inner layer is a 300-mesh dense grid.

[0017] Further, the pore diameter of the gradient outer layer is 0.5 - 1 mm, the pore diameter of the gradient middle layer is 0.3 mm, the pore diameter of the gradient inner layer is less than 0.1 mm, the width of the barb-shaped nano-groove is less than 1 μm, and the depth of the barb-shaped nano-groove is 5 - 10 microns.

[0018] Further, the suspension support includes a plurality of clamping feet disposed on the substrate support for positioning the hollow grid collection cover. A suspension ring is fixedly connected to one side of the plurality of clamping feet.

[0019] Further, a PLC controller is provided on the outer side of the sputtering chamber body. An exhaust duct is provided at the upper end of the sputtering chamber body, and a particle counter is provided inside the exhaust duct. An infrared temperature sensor is provided on the inner side of the capture hood body. The PLC controller is electrically connected to the particle counter and the infrared temperature sensor respectively.

[0020] Further, an inert gas injection pipe is provided at the upper end of the sputtering chamber body. A plurality of permanent magnets are provided in the inner cavity of the sputtering chamber body, and the plurality of permanent magnets are arranged in a circular array outside the capture hood body.

[0021] Further, a plurality of electrode strips are embedded on the outer side of the capture hood body, and the plurality of electrode strips are arranged at equal intervals. An auxiliary electrode is provided on the outer side of the capture hood. A probe-type integrated electric field sensor electrically connected to the PLC controller is provided on the capture hood body.

[0022] Based on the above-described magnetic control sputtering chamber escape particle capture hood, the present invention also provides a method for using a magnetic control sputtering chamber escape particle capture hood, including the following steps:

[0023] S1. Sputtered particles are guided by the capture hood body and land on the surface of the workpiece to be coated for coating work. The barbed nano-grooves on the inner wall of the capture hood body adsorb tiny particles through van der Waals force, inhibiting the rebound escape caused by thermal vibration or air flow disturbance.

[0024] S2. Ensure that the electric field direction is consistent with the particle path to avoid reverse escape. Embedded compensation electrodes on the capture hood body, apply a bias voltage with the same potential as the substrate support to offset the electric field distortion and ensure the uniform distribution of the plasma.

[0025] A magnetic control sputtering chamber escape particle capture hood and method proposed by the present invention have the following advantages compared with the prior art:

[0026] Through the structural design of the capture hood body and the PLC controller, the present invention realizes the efficient capture and prevention of secondary escape of escape particles through the gradient structure, physical field coordination of the capture hood body and PLC dynamic control. At the same time, it improves the efficiency of rapid maintenance, solves the efficiency and safety hazard problems of traditional cleaning methods, improves work efficiency, reduces dust occupational injuries, improves quality, and reduces production costs. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1 It is a schematic cross-sectional structure diagram of the sputtering chamber body of the present invention;

[0028] Figure 2 It is a schematic structure diagram of the sputtering chamber body of the present invention;

[0029] Figure 3 It is a schematic three-dimensional structure diagram of the capture hood body of the present invention;

[0030] Figure 4 Schematic cross-sectional structure diagram of the capture cover body of the present invention;

[0031] Figure 5 Schematic diagram of the barbed nano-groove structure of the present invention.

[0032] In the figure: 1, sputtering chamber body; 2, PLC controller; 3, inert gas injection pipe; 4, exhaust pipe; 5, particle counter; 6, target; 7, substrate support; 8, permanent magnet; 9, capture cover body; 91, gradient outer layer; 92, gradient middle layer; 93, gradient inner layer; 94, diversion groove; 95, barbed nano-groove; 10, infrared temperature sensor; 11, probe-type integrated electric field sensor; 12, auxiliary electrode; 13, suspension bracket; 131, suspension ring; 132, clamping support leg; 14, electrode strip; 15, silicon carbide ceramic layer; 16, hafnium oxide active layer; 17, hollow grid collection cover. Specific embodiments

[0033] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. The specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts belong to the scope of protection of the present invention.

[0034] Embodiment 1

[0035] When adapting to high-end equipment, the capture cover body 9 uses a nickel-based alloy matrix and a surface-sprayed silicon carbide coating. At the same time, the thickness of the hafnium oxide active layer 16 on the inner wall of the capture cover body 9 is 50 nm, and the PLC controller 2 is used to automatically adjust the electric field to 300 V based on the data of the infrared temperature sensor 10. At the same time, the air flow rate is 0.5 L / min. After every 5000 g of particles are captured, it is ultrasonically cleaned and then annealed at 600 °C. The capture cover body 9 is replaced after 50 cycles.

[0036] The present invention provides a Figures 1-5 magnetron sputtering chamber escape particle capture cover as shown in

[0037] a sputtering chamber body 1, and a capture cover body 9 provided in the inner cavity of the sputtering chamber body 1;

[0038] A target 6 is provided at the top of the inner cavity of the sputtering chamber body 1, and a substrate support 7 for placing the workpiece to be coated is provided at the bottom of the inner cavity. A suspension bracket 13 is provided on the substrate support 7, and a hollow grid collection cover 17 is clamped on the suspension bracket 13. The capture cover body 9 is provided at the upper end of the hollow grid collection cover 17;

[0039] The trapping hood 9 includes a gradient outer layer 91, a gradient middle layer 92, and a gradient inner layer 93 arranged in sequence from outside to inside. An anti-backward-escape barbed nano-groove 95 is provided on the inner side of the gradient inner layer 93. The pore numbers per inch of the gradient outer layer 91, the gradient middle layer 92, and the gradient inner layer 93 increase in sequence. A radially arranged diversion groove 94 is provided on the outside of the gradient outer layer 91.

[0040] The trapping hood 9 is mainly made of nickel-based alloy. A silicon carbide ceramic layer 15 is sprayed on the outside of the trapping hood 9, and a hafnium oxide active layer 16 is sprayed on the inner side of the trapping hood 9. An insulating layer is sprayed on the surface of the hollow grid collecting hood 17. The use of nickel-based alloy improves the service life and corrosion resistance of the trapping hood 9.

[0041] The temperature tolerance of the trapping hood 9 is 800 °C. The hardness of the silicon carbide ceramic layer 15 is greater than 2000 HV. The number of times the hafnium oxide active layer 16 can be regenerated by high-temperature annealing is greater than 50 times. The material selection of the trapping hood 9 and the setting of the silicon carbide ceramic layer 15 make the trapping hood 9 highly corrosion-resistant. At the same time, the hafnium oxide active layer 16 can be regenerated by high-temperature annealing, reducing the maintenance cost.

[0042] The gradient outer layer 91 is a sparse grid with 100 mesh, the gradient middle layer 92 is a medium-density grid with 200 mesh, and the gradient inner layer 93 is a dense grid with 300 mesh. The pore diameter of the trapping hood 9 gradually decreases from outside to inside, forming a unidirectional diversion channel to force particles to concentrate inside the hood.

[0043] The pore diameter of the gradient outer layer 91 is 0.5 - 1 mm, the pore diameter of the gradient middle layer 92 is 0.3 mm, the pore diameter of the gradient inner layer 93 is less than 0.1 mm. The width of the barbed nano-groove 95 is less than 1 μm, and the depth of the barbed nano-groove 95 is 5 - 10 microns. The barbed nano-groove 95 can adsorb tiny particles through van der Waals force to prevent particle rebound and escape.

[0044] The suspension bracket 13 includes multiple sets of clamping feet 132 provided on the substrate bracket 7 for positioning the hollow grid collecting hood 17. A suspension ring 131 is fixedly connected to one side of each set of clamping feet 132. The use of the suspension bracket 13 can prevent the trapping hood 9 from contacting the substrate bracket, thereby avoiding interfering with the electric field and having a negative impact on the function of the substrate bracket 7 (anode plate).

[0045] A PLC controller 2 is provided on the outside of the sputtering chamber 1. An exhaust duct 4 is provided at the upper end of the sputtering chamber 1. A particle counter 5 is provided in the exhaust duct 4. An infrared temperature sensor 10 is provided on the inside of the collection cover 9. The PLC controller 2 is electrically connected to the particle counter 5 and the infrared temperature sensor 10, respectively. The infrared temperature sensor 10 and the particle counter 5 can monitor the particle concentration in the collection cover 90 in real time, thereby adjusting the electric field voltage (100-500V) and the airflow rate (0.1-1L / min) through the PLC controller 2.

[0046] During the magnetron sputtering process, in addition to maintaining a vacuum environment, some chemical reactions will also occur. Since inert gas is used as the sputtering gas, these gases will carry some sputtering particles and reaction products after interacting with the target material and the workpiece. The exhaust pipe 4 can discharge these reaction exhaust gases in time to ensure the purity of the gas composition in the chamber, avoid the adverse effects of the exhaust gas on the coating process, maintain a stable vacuum coating environment, and avoid the accumulation of exhaust gas in the chamber, affecting the vacuum degree, thereby ensuring the normal progress of magnetron sputtering.

[0047] An inert gas injection pipe 3 is provided at the upper end of the sputtering chamber 1, and multiple groups of permanent magnets 8 are provided in the inner cavity of the sputtering chamber 1. The multiple groups of permanent magnets 8 are arranged in a circular array on the outside of the capture cover 9. The permanent magnets 8 use magnetic field lines to constrain the movement trajectory of particles and guide them in a direction to the collection area.

[0048] Multiple groups of electrode strips 14 are embedded on the outside of the collection cover 9, and the multiple groups of electrode strips 14 are arranged at equal intervals. An auxiliary electrode 12 is provided on the outside of the collection cover. A probe-type integrated electric field sensor 11 electrically connected to the PLC controller 2 is provided on the collection cover 9. After the collection cover 9 is disassembled, it is immersed in a nitric acid-hydrofluoric acid mixture (pH = 1.5) and cleaned with 60kHz ultrasonic waves for 10 minutes, which can remove ≥95% of the attachments.

[0049] Traditional particle sputtering prevention has an interception efficiency of less than 70%, and the secondary escape volume is greater than 20%. The single maintenance time is 8-16 hours, the average annual maintenance cost is high, and the concentration of metal dust is high.

[0050] The interception efficiency of particle sputtering in this technical solution is greater than 98%, which is 40% higher than the traditional method. The amount of secondary escape of particles is reduced to less than 5%, and the effect of preventing secondary escape is improved by 97.5%. The time for single maintenance is shortened to less than 1 hour, further reducing the maintenance cost of the equipment and the concentration of metal dust, and the safety of the equipment is significantly improved.

[0051] In summary, a unidirectional diversion channel is formed by the trapping cover 9, so that the sputtered escaping particles are unidirectionally enriched into the trapping cover 9. The barbed nano-grooves 95 adsorb microparticles through van der Waals forces to inhibit reverse escape. At the same time, the diversion grooves 94 outside the trapping cover 9 guide the escaping particles to gather in the edge enrichment area to reduce rebound. The auxiliary electrode 12 on the trapping cover 9 can be externally connected to a bias voltage with the same potential as the substrate support 7 to offset the electric field distortion. The probe-type integrated electric field sensor 11 dynamically adjusts the compensation voltage through the PLC to maintain the electric field uniformity. The electrode strip 14 is externally connected to an electric field of DC 200 - 500V to attract the directional movement of charged particles. And the permanent magnet 8 uses magnetic field lines to constrain the movement trajectory of charged particles. The direction of the electric field is consistent with the particle movement path to prevent reverse escape, further divert the particles to the enrichment area, and reduce random scattering.

[0052] Example 2,

[0053] The difference from Example 1 is that the trapping cover 9 uses a 316L stainless steel substrate and an alumina coating, and the thickness of the alumina coating is 20 nm. At the same time, the electric field is adjusted to 200 V in manual mode, the gas flow rate is 0.3 L / min, the metal is recovered by pickling after single use, and the substrate is remelted and regenerated, reducing the particle sputtering cost.

[0054] Finally, it should be noted that the above are only the preferred embodiments of the present invention and are not used to limit the present invention. Although the present invention has been described in detail with reference to the foregoing embodiments, for those skilled in the art, they can still modify the technical solutions described in the foregoing embodiments, or perform equivalent replacements for some of the technical features. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present invention shall be included within the protection scope of the present invention.

Claims

1. A magnetic sputtering chamber escape particle capture cover, characterized in that Comprising: A sputtering chamber (1), and a trapping cover (9) disposed inside the sputtering chamber (1); At the top of the inner cavity of the sputtering chamber (1), a target (6) is provided. At the bottom of the inner cavity, a substrate holder (7) for placing the workpiece to be coated is provided. On the substrate holder (7), a floating holder (13) is provided. An open-grid collection cover (17) is clamped on the floating holder (13). The trapping cover (9) is disposed at the upper end of the open-grid collection cover (17); The trapping cover (9) includes a gradient outer layer (91), a gradient middle layer (92), and a gradient inner layer (93) arranged in sequence from outside to inside. On the inner side of the gradient inner layer (93), barbed nano-grooves (95) for preventing particle back-escape are provided. The pore number of the gradient outer layer (91), the pore number of the gradient middle layer (92), and the pore number of the gradient inner layer (93) increase in sequence. On the outer side of the gradient outer layer (91), radial flow guiding grooves (94) are provided.

2. The particle capture cover for escaping particles in a magnetron sputtering chamber according to claim 1, wherein: The trapping cover (9) is mainly composed of a nickel-based alloy. A silicon carbide ceramic layer (15) is sprayed on the outer side of the trapping cover (9). A hafnium oxide active layer (16) is sprayed on the inner side of the trapping cover (9). An insulating layer is sprayed on the surface of the open-grid collection cover (17).

3. A magnetic sputtering chamber escape particle capture cover according to claim 2, characterized in that: The trapping cover (9) can withstand a temperature of 800 °C. The hardness of the silicon carbide ceramic layer (15) is greater than 2000 HV. The number of times the hafnium oxide active layer (16) can be regenerated by high-temperature annealing is greater than 50 times.

4. A magnetic sputtering chamber escape particle capture cover according to claim 3, characterized in that: The gradient outer layer (91) is a sparse grid with 100 meshes. The gradient middle layer (92) is a medium-density grid with 200 meshes. The gradient inner layer (93) is a dense grid with 300 meshes.

5. A magnetic sputtering chamber escape particle capture cover according to claim 4, characterized in that: The pore diameter of the gradient outer layer (91) is 0.5 - 1 mm. The pore diameter of the gradient middle layer (92) is 0.3 mm. The pore diameter of the gradient inner layer (93) is less than 0.1 mm. The width of the barbed nano-grooves (95) is less than 1 μm. The depth of the barbed nano-grooves (95) is 5 - 10 microns.

6. The particle capture cover for escaping particles in a magnetron sputtering chamber according to claim 5, characterized in that: The floating holder (13) includes multiple groups of clamping feet (132) disposed on the substrate holder (7) for positioning the open-grid collection cover (17). On one side of each group of clamping feet (132), a floating ring (131) is fixedly connected.

7. A magnetic sputtering chamber escape particle capture cover according to claim 6, characterized in that: On the outer side of the sputtering chamber (1), a PLC controller (2) is provided. At the upper end of the sputtering chamber (1), an exhaust pipe (4) is provided. A particle counter (5) is disposed inside the exhaust pipe (4). An infrared temperature sensor (10) is disposed on the inner side of the trapping cover (9). The PLC controller (2) is electrically connected to the particle counter (5) and the infrared temperature sensor (10) respectively.

8. A magnetic sputtering chamber escape particle capture cover according to claim 7, characterized in that: At the upper end of the sputtering chamber (1), an inert gas injection pipe (3) is provided. Inside the sputtering chamber (1), multiple groups of permanent magnets (8) are provided. The multiple groups of permanent magnets (8) are arranged in a circular array outside the trapping cover (9).

9. A magnetic sputtering chamber escape particle capture cover according to claim 8, characterized in that: A plurality of electrode strips (14) are embedded on the outer side of the capture hood (9), and the plurality of electrode strips (14) are arranged at equal intervals. An auxiliary electrode (12) is arranged on the outer side of the capture hood, and a probe type integrated electric field sensor (11) electrically connected to the PLC controller (2) is arranged on the capture hood body (9).

10. A method for using a capture cover for escaping particles in a magnetron sputtering chamber according to any one of claims 1-9, characterized in that, The method includes the following steps: S1. Sputtered particles fall on the surface of the workpiece to be coated under the guidance of the capture hood body for coating work. The barbed nano-grooves on the inner wall of the capture hood body adsorb tiny particles through van der Waals forces, inhibiting the rebound and escape caused by thermal vibration or air flow disturbance; S2. Ensure that the electric field direction is consistent with the particle path to avoid reverse escape. Embedded compensation electrodes on the capture hood body, apply a bias voltage with the same potential as the substrate support to offset the electric field distortion and ensure the uniform distribution of the plasma.

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