Construction method and system of spot plating anode model based on cone jet flow

Abstract

The invention relates to a construction method and system of a spot plating anode model based on cone jet flow. The method comprises the following steps: providing a spot plating anode mechanism; assembling a plating device mechanism; metal types and density data of a plating solution are selected, and the selected plating solution is put into a groove body of a plating device mechanism; arranging the semiconductor lead frame to be processed at the determined position of the plating device mechanism; calculating the jet flow range H of a conical anode jet flow through hole of the spot plating anode mechanism; and constructing a spot plating anode model based on the plating solution fluid kinetic energy equation and the plating solution fluid dissipation rate equation. According to the invention, the accuracy of simulating the local coating film thickness of the semiconductor lead frame can be quickly realized, the error with the coating film thickness of an actual electroplating product is greatly reduced, the technical level of a spot plating anode cone jet device can be further improved, the uniformity of the coating film thickness of the semiconductor lead frame is further improved, and the application prospect is wide. And the requirements of high-end semiconductor lead frame products on high-end performance and high quality are met.

Description

Technical Field

[0001] The present invention relates to a construction method and system of a point plating anode model based on a conical jet, belonging to the technical field of the integration of artificial intelligence control and point plating anode devices. Background Art

[0002] An electronic point plating anode is an important part of a system device that is very sensitive to the local electrochemical and physical space environment of metal ions during the metal plating process of a semiconductor lead frame. It has extremely wide applications in high-end manufacturing fields such as the research and development of micro-precision electronic products, electrochemical research, and the metal plating of semiconductor lead frames. During the production and operation process of semiconductor lead frame plating, factors such as the electronic point plating anode, the diameter of its configured pipeline, and the flow rate of the electroplating solution pump transporting the electroplating solution have complex influencing factors on the plating of metal ions on the surface of the semiconductor lead frame; therefore, due to the interference of various influencing factors, the actual plated metal coatings will have various differences. In the light case, it will be difficult to control the coating area, the coating will precipitate too quickly and be rough. In the severe case, the coating will lack density and the coating thickness distribution will be uneven, making it difficult to meet the high-end performance requirements of semiconductor lead frames.

[0003] Currently, the screening method for verifying the optimal conditions of an electronic point plating anode is the golden section method. During the process of its performance evaluation, a large number of experimental works need to be carried out for the range of the diameter of the electronic point plating through hole, the diameter of its configured pipeline, and the flow rate of the electroplating solution pump transporting the electroplating solution. At the same time, electroplating equipment modules need to be configured to process the plated metal coating samples of semiconductor electronic components for evaluation. The research and development cycle is long, and it is difficult to meet the current needs of semiconductor electronic components for the rapid development of various precision electroless plating solutions; therefore, exploring and creating a construction method and system of an electronic point plating anode model with a short cycle and accurate metal plating has become a very important topic. Summary of the Invention

[0004] To solve the above problems, the present invention provides a construction method and system of a point plating anode model based on a conical jet to meet the accuracy requirements for screening the optimal conditions of an electronic point plating anode and the need to shorten the research and development cycle during the metal plating process of high-end semiconductor lead frames.

[0005] To achieve the above object, the technical solution adopted by the present invention is as follows: In the first aspect, the present invention provides a construction method of a point plating anode model, and the method includes: Step 1: Provide a point plating anode mechanism, the point plating anode mechanism includes an outer cylinder and an inner cylinder disposed inside the outer cylinder, and the outer cylinder is provided with an anodic jet through hole in a conical shape; Step 2: Assemble the plating device mechanism including the dot plating anode mechanism, and configure a pump and a flow meter for transporting the plating solution; Step 3: Select the metal type and density data of the plating solution, and place the selected plating solution into the tank of the plating device mechanism; Step 4: Set the semiconductor lead frame to be processed at a specified position of the plating device mechanism; Step 5: Calculate the jet range of the anode jet through-hole of the dot plating anode mechanism in the shape of a cone H ; Step 6: Based on the plating solution fluid kinetic energy k equation and the plating solution fluid dissipation rate ε equation, construct a dot plating anode model; Step 7: Optimize and simulate the jet range of the plating solution through the dot plating anode model in Step 6 H 模拟射程 , apply it to the high-end plating equipment module for testing, and obtain the actual jet range of the plating solution H 实测射程 Step 8: Compare H 模拟射程 with H 实测射程 . If it satisfies: (100% - 0.8%) H 模拟射程 ≤ H 实测射程 ≤ (100% + 0.8%) H 模拟射程 Formula 4 Then confirm the dot plating anode model; otherwise, based on the actual jet range of the plating solution H 实测射程 , correct the simulated jet range of the plating solution H 模拟射程 and loop Step 6 until the condition is satisfied.

[0006] In an embodiment of the present invention, in Step 5, the jet range of the anode jet through-hole of the dot plating anode mechanism in the shape of a cone is calculated by Formula 1 H :

[0007] Since

[0008] Therefore, Formula 1 In the formula: H is the jet range, m; P is the pump power, Kg·m / h; η is the pumping efficiency, %; is the pumping flow rate, Kg / h; m is a parameter associated with the plating anode.

[0009] In an embodiment of the present invention, the fluid kinetic energy of the plating solution k equation is: Formula 2 wherein, in Formula 2, ρ is the fluid density, k is the turbulent energy, ε is the turbulent dissipation rate, t is the time, is the velocity component, μ t is the turbulent viscosity value, P is the parameter, G is the turbulent kinetic energy generated by the mean velocity gradient, Y M is the influence of the fluctuating expansion in the jet on the total dissipation rate; In Formula 2, represents t the differential term of the continuous turbulent energy at time represents x j the differential terms of the continuous turbulent energy and the pulsating mean energy in the represents x j direction of the energy differential term shown, P k is the turbulence generation term, G b is the turbulent kinetic energy term generated by the mean velocity gradient, ρε represents the energy correction term corresponding to the fluid density and the turbulent dissipation rate, Y M represents the contribution of the fluctuating expansion in the compressible jet to the total dissipation rate; The fluid dissipation rate of the plating solution ε equation is: Formula 3 wherein, in Formula 3, ρ is the fluid density, k is the turbulent energy, ε is the turbulent dissipation rate, t is the time, is the velocity component, μ t is the turbulent viscosity value,P is a parameter G is the turbulent kinetic energy generated by the average velocity gradient; In Formula 3, represents t the differential term of the turbulent dissipation rate at time represents x i the continuous dissipation rate and the differential term of the average pulsating energy in the represents x j direction, and the right side of the equal sign is the specific expansion; represents the first correction term of the jet energy of the electroplating anode, represents the second correction term of the jet energy of the electroplating anode; where C ε1 , C ε2 and C ε3 are correction coefficients.

[0010] In an embodiment of the present invention, step 7 specifically includes: selecting the simulated plating solution jet range H obtained according to the inlet and outlet diameters of the electroplating anode jet, and passing the operation equation of the electroplating anode cone jet in step 6 through the jet range H the shaft power P in Formula 1 and the correlation of the fluid kinetic energy of the plating solution in Formula 2, optimizing the obtained simulated plating solution jet range H 模拟射程 , and applying it to the high-end plating equipment module for testing to obtain the actual plating solution jet range H 实测射程 .

[0011] In an embodiment of the present invention, step 8 further includes: discarding the correction data that still does not satisfy Formula 4 after multiple cycles of optimization.

[0012] In an embodiment of the present invention, the metal types of the plating solution include: monomer coatings Au, Ag, Ni, Sn, Cu, Pd, Rh, Pt; alloy coatings Au-Ni, Pd-Ni, Ni-P, W-Ni, Ag-Sn, Au-Sn, Rh-Ru, and Pt-Rh or ternary and above alloy metals such as Au-W-Ni.

[0013] In an embodiment of the present invention, the inner diameter of the conical anode jet through-hole > the outer diameter; the inner cylinder is provided with a jet through-opening in the shape of a long trapezoid, and the inner width of the jet through-opening > the outer width.

[0014] In a second aspect, the present invention provides a system for constructing a dot plating anode model, which is used to implement the method for constructing the dot plating anode model. The system includes: A dot plating anode mechanism, including an outer cylinder and an inner cylinder disposed within the outer cylinder. The outer cylinder is provided with an anodic jet through-hole in a conical shape. The dot plating anode mechanism is used to form a jet of the plating solution through the anodic jet through-hole in a conical shape and direct it towards a partial plating area of the semiconductor lead frame. At the same time, the dot plating anode acts as a conductive carrier; A plating device mechanism, including a dot plating anode mechanism, a pump circulation filtration system for transporting the plating solution and equipped with a flowmeter, and a plating electrolysis power supply. The plating device mechanism is used to perform actual tests using the simulated plating solution jet range H 模拟射程 calculated based on the selected jet outlet diameter D of the dot plating anode as a standard set value; A dot plating anode conical jet operation system, which is used to calculate the simulated plating solution jet range through Formulas 1, 2, and 3 based on various parameters of the dot plating anode and various characteristic data of the plating solution H 模拟射程 and use it as the set standard value for the actual test of the plating device; A dot plating anode jet range control module, which is used to detect and regulate the conical jet range of the dot plating anode in real time H 实测射程 and the simulated plating solution jet range H 模拟射程 data, and at the same time detect and regulate their difference H 模拟射程 - H 模拟射程 data; An intelligent control system for the dot plating anode plating device, which is used to detect and regulate the relative positions of the jet outlets of the outer cylinder and the inner cylinder of the dot plating anode mechanism in real time; synchronously feed back the actual conical jet range H 实测射程 result to the dot plating anode conical jet operation system in real time, and provide real-time test data by discriminating with the simulated dot plating anode jet range H 模拟射程 result; A dot plating anode jet range discrimination module, which is used to discriminate the conical jet range of the dot plating anode detected in real time H 实测射程 and the simulated plating solution jet range H 模拟射程 data, and perform discrimination through Formula 4. The jet range that satisfies Formula 4 H 模拟射程Data enters the training system of the point plating anode cone jet model for training to optimize the measured cone jet range. H 实测射程 And the simulated plating solution jet range H 模拟射程 The difference between the data H 实测射程 - H 模拟射程 to improve the control precision of the cone jet range of the point plating anode; conversely, the jet range data that does not satisfy Formula 4 H 实测射程 According to the measured cone jet range H 模拟射程 The difference of the data, re-correct according to the point plating anode cone jet operation system to obtain the corrected simulated plating solution jet range H 实测射程 as the standard setting value for actual testing again; if the jet range data of the point plating anode that still cannot satisfy Formula 4 after cyclic training and actual testing will be discarded; H 模拟射程 The point plating anode cone jet model training system is used to train the jet range data that meets the criteria of Formula 4 and the corresponding measured cone jet range H 模拟射程 data to realize the construction of an optimized point plating anode model based on the cone jet. Q 实测射程

[0015] In a third aspect, the present invention provides a computer-readable storage medium storing computer instructions, and the computer instructions are executed by a processor to perform the method.

[0016] In a fourth aspect, the present invention provides a computer program product storing computer instructions, and the computer instructions are executed by a processor to perform the method.

[0017] The beneficial effects of the present invention are as follows: Through the optimization of the point plating anode model based on the cone jet and the implementation of training through the point plating anode cone jet model training system, the constructed jet range H 模拟射程 data of the point plating anode and the measured cone jet range H 实测射程 data obtained from the actual operation detection of the plating device mechanism H 实测射程 - H 模拟射程 ​; When the difference meets the conditions of Formula 4, the smaller the difference, the more accurate the constructed dot-plating anode model; conversely, the dot-plating anode jet range data that still cannot meet Formula 4 after implementing cyclic training will be discarded, strictly controlling the high-end quality requirements of the dot-plating anode cone jet plating system according to this standard.

[0018] Based on the optimization result of the double-cylinder structure of the inner cylinder and the outer cylinder of the dot-plating anode of the present invention, by slightly adjusting the inner cylinder of the dot-plating anode clockwise, the overlapping degree between the long trapezoidal jet outlet of the inner cylinder of the dot-plating anode and the cone inlet of the outer cylinder of the dot-plating anode can be automatically adjusted within a limited range, realizing the actual range of the plating solution jet flowing from the outer cylinder of the dot-plating anode to the local plating area of the semiconductor lead frame. H 实测射程 and the simulated range for constructing the model H 模拟射程 The difference is small, stable, and easy to control, that is, the intelligent integration of the inner and outer double-cylinder structure of the dot-plating anode and the dot-plating anode cone jet model system accurately meets the management requirements of the dot-plating anode jet range threshold formula 4.

[0019] Based on the optimization result of the dot-plating anode model of the present invention, in the actual production process, the design and manufacturing method conditions of the dot-plating anode cone jet for various different semiconductor lead frames can be quickly established. Furthermore, by obtaining the optimal control method of the dot-plating anode cone jet for the semiconductor lead frame, not only can the accuracy of simulating the local coating film thickness of the semiconductor lead frame be quickly achieved, the error between the coating film thickness of the actual electroplated product and the simulated one can be greatly reduced, but also the technical level of the dot-plating anode cone jet device can be further improved, and the uniformity of the coating film thickness of the semiconductor lead frame can be further increased, meeting the requirements of high-end semiconductor lead frame products for high-end performance and high quality. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the following drawings are only some embodiments of the present invention. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts.

[0021] Figure 1 is a schematic assembly diagram of the outer cylinder and the inner cylinder of the dot-plating anode mechanism provided by the present invention.

[0022] Figure 2 is a schematic structural diagram of the outer cylinder of the dot-plating anode mechanism provided by the present invention.

[0023] Figure 3 is a schematic structural diagram of the inner cylinder of the dot-plating anode mechanism provided by the present invention.

[0024] Figure 4 It is a schematic structural diagram of the anode jet through-hole in the shape of a cone of the dot plating anode mechanism provided by the present invention.

[0025] Figure 5 It is a composition diagram of the construction system of the dot plating anode model based on cone jet provided by the present invention.

[0026] Figure 6 It is a schematic diagram showing the change of the dot plating anode cone range with time in the third embodiment of the present invention.

[0027] Figure 7 It is a schematic diagram showing the change of the dot plating anode cone range with time in the comparative example of the present invention.

[0028] In the figure: 110, inner cylinder; 120, outer cylinder; 200, dot plating anode mechanism; 300, plating device mechanism; 400, dot plating anode cone jet operation system; 500, dot plating anode jet range control module; 600, dot plating anode plating device intelligent control system; 700, dot plating anode jet range discrimination module; 800, dot plating anode cone jet model training system. Detailed implementation manners

[0029] Next, the technical solutions of the present invention will be clearly and completely described in conjunction with the accompanying drawings. Obviously, the described embodiments are part of the embodiments of the present invention, rather than all of the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the protection scope of the present invention.

[0030] Embodiment 1: As Figures 1 to 5 shown, this embodiment provides a method for constructing a dot plating anode model based on cone jet, including: Step 1: Store the design dimensions of the dot plating anode mechanism 200 in the database of the intelligent control system: As Figure 1 shown, the dot plating anode mechanism 200 includes an outer cylinder 120 and an inner cylinder 110 arranged inside the outer cylinder 120; the selected outer cylinder 120 has a diameter of 250 mm; the height of the outer cylinder 120 is 70 mm; the wall thickness of the outer cylinder 120 is 5 mm; the inner cylinder 110 has a diameter of 230 mm; the height of the inner cylinder 110 is 120 mm; the wall thickness of the inner cylinder 110 is 5 mm.

[0031] Further, as Figure 2 shown, the outer cylinder 120 is provided with four columns and four rows of anode jet through-holes, and the anode jet through-holes are in the shape of a cone, with the inner diameter > the outer diameter. Specifically, its inner diameter is 6 mm; its outer diameter is 3 mm.

[0032] As Figure 3As shown, the inner cylinder 110 is provided with four columns of jet through-holes. The jet through-holes are in the shape of long trapezoids, with the inner width > the outer width. Specifically, the inner width is 5 mm; the outer width is 2 mm, and the outer outlet length is 29 mm.

[0033] Step 2: Assemble the plating device mechanism 300 including the dot plating anode mechanism 200, and configure the corresponding pump and flowmeter for transporting the plating solution; Step 3: Select the metal type and density data of the plating solution, place the selected plating solution into the tank of the plating device mechanism 300, and input the determined metal density data into the dot plating anode cone jet operation system 400; Step 4: Place the semiconductor lead frame to be processed at the designated position of the plating device mechanism 300; Step 5: Calculate the jet range of the anode jet through-hole of the dot plating anode mechanism 200 in the shape of a cone H ; The jet range of the anode jet through-hole of the dot plating anode mechanism 200 in the shape of a cone H , and the relationship with the jet outlet diameter D is:

[0034] Since

[0035] Therefore, Formula 1 In the formula: H is the jet range, m; P is the pump power, Kg·m / h; η is the pump efficiency, %; is the pump flow rate, Kg / h; m is the parameter associated with the dot plating anode; Step 6: Based on the operation equation of the dot plating anode cone jet mode for intelligently controlling the transport of the plating solution, construct a dot plating anode model. The operation equation of the dot plating anode cone jet mode includes the kinetic energy k equation of the plating solution fluid and the dissipation rate ε equation of the solution fluid; The kinetic energy k equation of the plating solution fluid is: Formula 2 The kinetic energy k equation of the plating solution fluid can simulate the kinetic energy distribution scenario of the plating solution passing through the through-hole of the dot plating anode cone, predict the energy required for the dot plating anode cone jet; and satisfy the jet impact on the designated surface area of the semiconductor lead frame.

[0036] Fluid dissipation rate of plating solution ε The equation is as follows: Formula 3 Fluid dissipation rate of plating solution ε The equation can simulate jet impingement, which is very similar to the process of the plating solution of the present invention shooting out from the liquid spraying outlet of the dot plating anode and impinging on the surface of the opposite semiconductor lead frame.

[0037] Among them, in Formula 2, ρ is the fluid density, k is the turbulent kinetic energy, ε is the turbulent dissipation rate, t is the time, is the velocity component, μ t is the turbulent viscosity value, P is the parameter, G is the turbulent kinetic energy generated by the mean velocity gradient, Y M is the influence of the fluctuating expansion in the jet on the total dissipation rate; In Formula 2, represents t the differential term of the continuous turbulent kinetic energy at time represents x j the differential terms of the continuous turbulent kinetic energy and the pulsating mean energy in the represents x j direction, and the right side of the equal sign is the specific expansion; P k is the turbulent generation term, G b is the turbulent kinetic energy term generated by the mean velocity gradient, ρε represents the energy correction term corresponding to the fluid density and the turbulent dissipation rate, Y M represents the contribution of the fluctuating expansion in the compressible jet to the total dissipation rate; Among them, in Formula 3, ρ is the fluid density, k is the turbulent kinetic energy, ε is the turbulent dissipation rate, t is the time, is the velocity component, μ t is the turbulent viscosity value, P is the parameter, G is the turbulent kinetic energy generated by the mean velocity gradient; In Formula 3, represents tThe differential term of the turbulent dissipation rate at a moment represents x i the continuous dissipation rate and the differential term of the average pulsating energy in the represents x j direction, and the right side of the equal sign is the specific expansion formula; represents the first correction term of the jet energy of the point plating anode, represents the second correction term of the jet energy of the point plating anode.

[0038] In the first correction term and the second correction term C ε1 , C ε2 and C ε3 are correction coefficients closely related to the point plating anode injection system of the present invention. Only within the range of the point plating anode injection range defined by the present invention, by selecting the corresponding correction coefficients, can an accurate simulated injection range standard be obtained H 模拟射程 .

[0039] Based on Formula 1, Formula 2 and Formula 3, the present invention can simulate the jet impact of the point plating anode, that is, the plating solution fluid is ejected from the liquid ejection outlet of the point plating anode and impacts the surface of the semiconductor lead frame; at the same time, through the correction coefficients C ε1 , C ε2 , C ε3 which are closely related to the intelligent control mode of the point plating anode jet impact of the present invention, training and optimization are carried out to realize excellent intelligent control of the point plating anode, and a method and system for quickly obtaining the construction of a precision injection point plating anode model.

[0040] Step 7: Select the simulated plating solution jet range obtained according to the inlet and outlet diameters of the point plating anode jet H , and through the jet range H the shaft power in Formula 1 P and the correlation of the kinetic energy of the plating solution fluid in Formula 2, further optimize the obtained simulated plating solution jet range H 模拟射程 , and apply it to the high-end plating equipment module for testing to obtain the actual plating solution jet range H 实测射程 ; Step 8: According to the simulated plating solution jet range H 模拟射程 of the point plating anode, and the actual tested plating solution jet rangeH 实测射程 Compare as follows: (100% - 0.8%) H 模拟射程 ≤ H 实测射程 ≤ (100% + 0.8%) H 模拟射程 Formula 4 The results of the jet range of the plating solution for the actual test that satisfy Formula 4 H 实测射程 , and the jet outlet diameter of the corresponding dot plating anode D The simulated jet range of the plating solution calculated and obtained H 模拟射程 The difference H 实测射程 - H 模拟射程 The smaller the value, the more beneficial it is to further train and optimize the dot plating anode cone jet model to obtain an accurate jet range of the plating solution; If Formula 4 is not satisfied, then based on the jet range of the plating solution for the actual test H 实测射程 , the simulated jet range of the plating solution H 模拟射程 is corrected; and the process of Step 6 is looped until Formula 4 is satisfied, and the data obtained by the correction can be further trained and optimized. Otherwise, the correction data that still does not satisfy Formula 4 after multiple loop optimizations will be discarded, and the high-end quality requirements of the dot plating anode cone jet plating system are strictly controlled according to this standard.

[0041] Optionally, the metal types of the electroplating solution include: Monomer coatings Au, Ag, Ni, Sn, Cu, Pd, Rh, Pt; Alloy coatings Au-Ni, Pd-Ni, Ni-P, W-Ni, Ag-Sn, Au-Sn, Rh-Ru, and Pt-Rh or ternary and above alloy metals such as Au-W-Ni.

[0042] Example 2: This embodiment provides a construction system for a dot plating anode model based on a cone jet, which is used to implement the construction method of the dot plating anode model based on a cone jet described in Example 1, including: The spot-plating anode mechanism 200 includes an outer cylinder 120 and an inner cylinder 110 disposed within the outer cylinder 120. The outer cylinder 120 is provided with a conical anode jet flow hole. The spot-plating anode mechanism 200 is used to form a jet of plating solution through the conical anode jet flow hole and direct it toward a localized plating area of the semiconductor lead frame. By fine-tuning the inner cylinder 110, the plating solution is more accurately directed toward the localized area of the semiconductor lead frame. At the same time, the spot-plating anode acts as a conductive carrier. The plating device mechanism 300 includes a point plating anode mechanism 200, a pump circulation filtration system for conveying plating solution and equipped with a flow meter, and a plating electrolysis power supply; the plating device mechanism 300 is used to calculate the simulated plating solution jet range obtained by the selected point plating anode jet outlet diameter D. H 模拟射程 , used as the standard setting value for actual testing; The point plating anode cone jet calculation system 400 is used to calculate various parameters of the point plating anode and various characteristic data of the plating solution through formula 1, formula 2 and formula 3 to obtain the simulated plating solution jet range. H 模拟射程 and use it as a set standard value for actual testing of the plating device; The spot plating anode jet range control module 500 is used to detect and control the cone jet range of the spot plating anode in real time. H 实测射程 Jet range of simulated plating solution H 模拟射程 Data, and real-time detection and regulation of the difference H 模拟射程 - H 模拟射程 Data; Among them, the real-time detection and control of the cone jet range of the point-plated anode is achieved by real-time adjustment of the pump flow rate of the pump circulation filtration system equipped with a flow meter; The intelligent control system 600 of the spot anode plating device is used to detect and control the relative positions of the jet outlets of the outer cylinder 120 and the inner cylinder 110 of the spot anode plating mechanism 200 in real time; H 实测射程 The results are fed back to the spot plating anode cone jet calculation system 400 in real time, and the simulated spot plating anode jet range is H 模拟射程 The results are judged and real-time test data is provided; The spot plating anode jet range determination module 700 is used to determine the cone jet range of the spot plating anode detected in real time. H 实测射程 Jet range of simulated plating solution H 模拟射程 Data is judged by formula 4, and the jet range that satisfies formula 4 isH 模拟射程 Data enters the training system 800 of the cone jet of the plating anode for training to optimize the measured cone jet range H 实测射程 And the simulated plating solution jet range H 模拟射程 The difference between the data H 实测射程 - H 模拟射程 , improve the control precision of the cone jet range of the plating anode; conversely, the jet range data that does not satisfy Formula 4 H 实测射程 , according to the difference in the measured cone jet range H 模拟射程 Data, re-correct according to the cone jet operation system 400 of the plating anode according to the difference to obtain the corrected simulated plating solution jet range H 实测射程 , and use it as the standard setting value to conduct actual tests again; if the jet range data of the plating anode that still cannot satisfy Formula 4 after cyclic training and actual tests will be discarded; H 模拟射程 The training system 800 of the cone jet of the plating anode is used to train the jet range Data that passes the discrimination of Formula 4 and the corresponding measured cone jet range H 模拟射程 Data to realize the construction of an optimized plating anode model based on the cone jet. Q 实测射程 Data to realize the construction of an optimized plating anode model based on the cone jet.

[0043] In this embodiment, through the constructed plating anode model based on the cone jet, the functions of rapid, accurate screening and classification discrimination of the model system of the cone jet range of the electron plating anode swirl are realized.

[0044] Embodiment Three: This embodiment combines the actual case to be selected, and details the construction process of the fast operation, precise optimization, and classification discrimination model data processing system of the cone jet plating anode system of the present invention. This embodiment uses the Figure 1 The plating anode mechanism 200 shown, and its specific dimensions are described in detail in Step 1 of Embodiment 1, and its jet range is 50-300 mm / s.

[0045] In this embodiment, the cone jet range of the plating anode is set to 100 mm / s, that is, the modeling standard jet range H 模拟射程is 100 mm / s. Using the dot plating anode coating device and its intelligent control system of the present invention, actual measurement operations are carried out on a specific silver plating solution and a high-speed silver plating device for semiconductor lead frames. The running time is 100 minutes, and an actual jet range is read and recorded every 10 seconds during the running process H 实测平均射程 data, the average value of 30 data every five minutes H 实测平均射程 As Figure 6 shown From Figure 6 it can be seen that the actual measurement results of the dot plating anode coating device and its intelligent control system of the present invention are 99.2 < H 实测平均射程 < 100.9 99.2 - 100 < H 实测平均射程 - H 模拟射程 < 100.9 - 100 Therefore, -0.8 < △H < 0.9 The above results clearly confirm that under the actual measurement conditions of the present invention, the allowable deviation of the cone jet range of the dot plating anode is 100% - 0.8% < H 实测平均射程 < 100% + 0.9%; The construction method and system of the dot plating anode model based on the cone jet established by the present invention are characterized in that according to the intelligent control accuracy requirements, the interval range of the operation equation operation time of the intelligent control system 600 of the dot plating anode coating device of the present invention can be set as 1 second ≤ time interval ≤ 60 seconds; It can be seen from this formula that the smaller the interval of the operation time, the more times the cone jet range of the actual measurement dot plating anode is trained per unit time, and the closer the obtained jet range result is to the H 实测平均射程 standard value of 100 mm / s set by the modeling; In other words, as long as there is a slight deviation tendency between the cone jet range of the actual measurement dot plating anode and the H 模拟射程 set H 实测平均射程 standard value, it can instantaneously perform operation training on the budding state of the slight deviation and maintain the cone jet range of the real-time dot plating anode H 模拟射程 infinitely approaching the simulated set H 实测平均射程 standard value of 100 mm / s, that is, the cone jet range of the actual measurement dot plating anode H 模拟射程 can meet the threshold range of formula 4 H 实测平均射程 ​

[0046] Furthermore, Figure 5 The cone jet range results of the dot plating anode for each five-minute interval in

[0047] and the change amount of the cone range jet flow of the dot plating anode are shown in Table 1.

[0048] Comparative example: Except for deactivating the dot plating anode plating device and its intelligent control system of the present invention, other set conditions and data are the same as those in Example 1: Set the cone jet range of the dot plating anode to 100 mm / s, that is, the modeling standard jet range H 模拟射程 is 100 mm / s. Conduct actual measurement operations on a specific silver plating solution and a high-speed silver plating device for semiconductor lead frames. The running time is 100 minutes, and an actual measured jet range is read and recorded every 10 seconds during the running process H 实测平均射程 data, and the average value of 30 data every five minutes H 实测平均射程 As Figure 7 shown.

[0049] From Figure 7 it can be seen that the actual measurement results of the dot plating anode plating device and its intelligent control system of the present invention: 96.4 < H 实测平均射程 < 103.5 96.4 - 100 < H 实测平均射程 - H 标准射程 < 103.5 - 100 Therefore, -3.6 < △H < 3.5 Furthermore, Figure 7 The cone jet range results of the dot plating anode for each five-minute interval in

[0050] and the change amount of the cone range jet flow of the dot plating anode are shown in Table 2.

[0051] For the above results, under the actual measurement conditions of the comparative example, the allowable deviation of the cone jet range of the dot plating anode is 100% - 3.6% < H 实测平均射程< 100% + 3.5%; the minimum deviation from the standard jet range is -3.6%, and the maximum deviation is 3.5%; therefore, for the prior art of the comparative example, the deviation of the cone jet range is large, and it cannot provide a stable jet range of the plating solution, resulting in uneven thickness distribution of the plating film on the semiconductor lead frame and affecting the signal transmission function of semiconductor chip electronic products.

[0052] Through the optimization of the spot plating anode model based on the cone jet and the implementation of training through the spot plating anode cone jet model training system 800, the jet range of the spot plating anode constructed H 模拟射程 data, and the measured cone jet range obtained from the actual operation detection of the plating device mechanism 300 H 实测射程 the difference between the data H 实测射程 - H 模拟射程 ; when the difference satisfies the conditions of Formula 4, the smaller the difference, the more accurate the constructed spot plating anode model; on the contrary, the spot plating anode jet range data that still cannot satisfy Formula 4 after implementing cyclic training will be discarded, so as to strictly control the high-end quality requirements of the spot plating anode cone jet plating system with this standard.

[0053] Based on the optimization result of the double-cylinder structure of the inner cylinder 110 and the outer cylinder 120 of the spot plating anode of the present invention, by finely adjusting the inner cylinder 110 of the spot plating anode clockwise, the overlapping degree between the long trapezoidal jet outlet and the cone inlet of the outer cylinder 120 of the spot plating anode can be automatically adjusted within a limited range, so as to realize the actual range of the plating solution jet from the outer cylinder 120 of the spot plating anode to the local plating area of the semiconductor lead frame H 实测射程 and the simulated range of the constructed model H 模拟射程 The difference is small, stable and easy to control, that is, the intelligent integration of the inner and outer double-cylinder structure of the spot plating anode and the spot plating anode cone jet model system accurately meets the management requirements of the spot plating anode jet range threshold formula 4.

[0054] In summary, the present invention solves the difficult-to-solve practical problems existing in the prior art, such as the large allowable deviation of the cone jet range of the spot plating anode, the uneven distribution of the coating film thickness of the semiconductor lead frame, and the influence on the signal transmission function of semiconductor chip electronic products. Through the optimization results of the spot plating anode model based on the cone jet of the present invention, the design and manufacturing method conditions of the cone jet of the spot plating anode for various different semiconductor lead frames can be quickly established during the actual production process. Furthermore, by obtaining the optimal control method of the cone jet of the spot plating anode for the semiconductor lead frame, not only can the accuracy of simulating the local coating film thickness of the semiconductor lead frame be quickly achieved, the error between the coating film thickness of the actual electroplated product can be greatly reduced, but also the technical level of the cone jet device of the spot plating anode can be further improved, and the uniformity of the coating film thickness of the semiconductor lead frame can be further increased, meeting the requirements of high-end semiconductor lead frame products for high-end performance and high quality.

[0055] Some steps in the embodiments of the present invention can be implemented by software, and the corresponding software program can be stored in a readable storage medium, such as an optical disc or a hard disk, etc.

[0056] The above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that they can still modify the technical solutions recorded in the foregoing embodiments, or perform equivalent replacements for some of the technical features; and these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention, and should all be included in the protection scope of the present invention.

Claims

1. A method for constructing a dot plating anode model, characterized in that The method comprises: Step 1: providing a spot-plating anode mechanism (200), the spot-plating anode mechanism (200) comprising an outer cylinder (120) and an inner cylinder (110) disposed within the outer cylinder (120), wherein the outer cylinder (120) is provided with a conical anode jet flow hole; Step 2: Assembling a plating device mechanism (300) including the point plating anode mechanism (200), and configuring a pump and a flow meter for conveying the plating solution; Step 3: Select the metal type and density data of the plating solution, and place the selected plating solution into the tank of the plating device mechanism (300); Step 4: placing the semiconductor lead frame to be processed at a predetermined position of the plating device mechanism (300); Step 5: Calculate the jet range of the anodic jet through-hole of the point plating anode mechanism (200) in a conical shape H ; Step 6: Based on the fluid kinetic energy of the plating solution k equation and the fluid dissipation rate of the plating solution ε equation, construct a point plating anode model; Step 7: Optimize and simulate the jet range of the plating solution through the dot plating anode model in Step 6 H 模拟射程 , apply it to the high-end plating equipment module for testing, and obtain the actual jet range of the plating solution H 实测射程 Step 8: Compare H 模拟射程 with H 实测射程 , if the following condition is met: (100% - 0.8%) H 模拟射程 ≤ H 实测射程 ≤ (100% + 0.8%) H 模拟射程 Formula 4 Then confirm the dot plating anode model; otherwise, use the actual jet range of the plating solution H 实测射程 as a reference to correct the simulated jet range of the plating solution H 模拟射程 And loop through step 6 until the conditions are met.

2. The method for constructing a dot plating anode model according to claim 1, characterized in that In the step 5, the jet range of the jet through hole of the point plating anode mechanism (200) in a conical shape is calculated by the formula 1 H : Due to Therefore, Formula 1 Wherein: H is the jet range, m; P is the pump power, Kg·m / h; η is the pumping efficiency, %; is the pump flow rate, Kg / h; m Parameters associated with the dot plating anode.

3. The method for constructing a dot plating anode model according to claim 2, wherein The fluid kinetic energy of the plating solution k The equation is: Formula 2 Among them, in Formula 2, ρ is the fluid density, k is the turbulent kinetic energy, ε is the turbulent dissipation rate, t is the time, is the velocity component, μ t is the turbulent viscosity value, P is the parameter, G is the turbulent kinetic energy generated by the mean velocity gradient, Y M is the influence of the fluctuating expansion in the jet on the total dissipation rate; In Equation 2, represents t the differential term of the continuous turbulent energy at the moment, represents x j the differential terms of the continuous turbulent energy and the pulsating mean energy in the direction. The right side of the equal sign is the specific expansion; represents x j the differential term of the energy in the direction shown by P k is the turbulence generation term, G b is the turbulent kinetic energy term generated by the mean velocity gradient, ρε represents the energy correction term corresponding to the fluid density and the turbulent dissipation rate, Y M represents the contribution of the fluctuating expansion to the total dissipation rate in the compressible jet; The fluid dissipation rate of the plating solution ε The equation is as follows: Formula 3 Among them, in Equation 3, ρ is the fluid density, k is the turbulent kinetic energy, ε is the turbulent dissipation rate, t is the time, is the velocity component, μ t is the turbulent viscosity value, P is the parameter, G is the turbulent kinetic energy generated by the mean velocity gradient; In Equation 3, represents t the differential term of the turbulent dissipation rate at time represents x i the continuous dissipation rate and the differential term of the mean pulsating energy in the represents x j direction, and the right side of the equal sign is the specific expansion; represents the first correction term of the jet energy of the plated anode, represents the second correction term of the jet energy of the plated anode; where C ε1 , C ε2 and C ε3 are correction coefficients.

4. The method for constructing the dot plating anode model according to claim 3, wherein Step 7 specifically includes: selecting the simulated plating solution jet range obtained based on the inlet and outlet diameters of the dot plating anode jet H , and through the jet range H the shaft power in Formula 1 P and the correlation of the plating solution fluid kinetic energy in Formula 2, optimize the obtained simulated plating solution jet range H 模拟射程 , apply it to the high-end plating equipment module for testing to obtain the actual plating solution jet range H 实测射程 .

5. The method for constructing a dot plating anode model according to claim 1, characterized in that The step 8 also includes discarding the corrected data that still does not satisfy the formula 4 after multiple cycles of optimization.

6. The method for constructing a dot plating anode model according to claim 1, characterized in that The metal types of the plating solution include: Single layer plating Au, Ag, Ni, Sn, Cu, Pd, Rh, Pt; Alloy plating: Au-Ni, Pd-Ni, Ni-P, W-Ni, Ag-Sn, Au-Sn, Rh-Ru and Pt-Rh or Au-W-Ni ternary or above alloy metals.

7. The method for constructing a dot plating anode model according to claim 1, characterized in that The inner diameter of the cone-shaped anode jet flow hole is greater than the outer diameter; the inner cylinder (110) is provided with a jet flow opening in the form of a long trapezoid, and the inner width of the jet flow opening is greater than the outer width.

8. A system for constructing a dot plating anode model, characterized in that, A method for constructing a spot plating anode model according to any one of claims 3 to 7, wherein the system comprises: The spot plating anode mechanism (200) comprises an outer cylinder (120) and an inner cylinder (110) disposed within the outer cylinder (120), wherein the outer cylinder (120) is provided with a conical anode jet flow hole; the spot plating anode mechanism (200) is used to form a jet of a plating solution through the conical anode jet flow hole, and to eject the jet toward a local plating area of a semiconductor lead frame, while the spot plating anode acts as a conductive carrier; Plating device mechanism (300), including a dot plating anode mechanism (200), a pump circulation filtration system for conveying a plating solution and equipped with a flow meter, and a plating electrolysis power supply; the plating device mechanism (300) is used to perform actual tests on the simulated plating solution jet range obtained by calculating the selected dot plating anode jet outlet diameter D H 模拟射程 , as a standard setting value A dot plating anode cone jet operation system (400) is used to calculate the simulated jet range of the plating solution by using Formula 1, Formula 2 and Formula 3 for various parameters of the dot plating anode and various characteristic data of the plating solution, and use it as the set standard value for actual testing of the plating device; H 模拟射程 and use it as the set standard value for actual testing of the plating device; Dot plating anode jet range control module (500), for real-time detection and regulation of the cone jet range of the dot plating anode H 实测射程 And the simulated plating solution jet range H 模拟射程 Data, while real-time detecting and regulating their difference H 模拟射程 - H 模拟射程 Data; The intelligent control system (600) of the dot-plating anode plating device is used to detect and regulate in real time the relative positions of the outer cylinder (120) and the inner cylinder (110) jet outlets of the dot-plating anode mechanism (200); synchronously feed the actual cone jet range H 实测射程 results back to the dot-plating anode cone jet operation system (400) in real time, and compare with the simulated dot-plating anode jet range H 模拟射程 results to provide real-time test data for discrimination; Spot Plating Anode Jet Range Discrimination Module (700), used to determine the cone jet range of the spot plating anode detected in real time H 实测射程 and the simulated plating solution jet range H 模拟射程 data, perform discrimination through Formula 4, and the jet range data that satisfies Formula 4 H 模拟射程 enters the Spot Plating Anode Cone Jet Model Training System (800) for training to optimize the measured cone jet range H 实测射程 and the simulated plating solution jet range H 模拟射程 the difference between the data H 实测射程 - H 模拟射程 , improve the control precision of the cone jet range of the spot plating anode H 实测射程 ; conversely, the jet range data that does not satisfy Formula 4 H 模拟射程 data, according to the difference in the measured cone jet range H 实测射程 is corrected again according to the Spot Plating Anode Cone Jet Operation System (400) to obtain the corrected simulated plating solution jet range H 模拟射程 , and is used as the standard setting value for actual testing again; if the spot plating anode jet range data that still cannot satisfy Formula 4 after cyclic training and actual testing will be discarded; Dot-plating anode cone jet model training system (800), for the jet range qualified by formula 4 H 模拟射程 data and the corresponding measured cone jet range Q 实测射程 data for training, to realize the construction of an optimized dot-plating anode model based on cone jet.

9. A computer-readable storage medium, characterized in that, The computer-readable storage medium stores computer instructions, and the computer instructions are used by a processor to execute the method according to any one of claims 1 to 7.

10. A computer program product, characterized in that, The computer program product stores computer instructions, and the computer instructions are used by a processor to execute the method according to any one of claims 1 to 7.

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