Method and system for constructing a point-plating anode model based on a conical jet

Abstract

The application relates to a construction method and system of a point-plating anode model based on a conical jet, and the method comprises the following steps: providing a point-plating anode mechanism; assembling a plating device mechanism; selecting the metal type and density data of a plating solution, and placing the selected plating solution into a groove body of the plating device mechanism; setting a semiconductor lead frame to be processed at a certain position of the plating device mechanism; calculating the jet range of a jet hole of a conical anode of the point-plating anode mechanism H ; and constructing a point-plating anode model based on a plating solution fluid kinetic energy equation and a plating solution fluid dissipation rate equation. The application can quickly realize the accuracy of simulation of local plating film thickness of a semiconductor lead frame, greatly reduce the error of the plating film thickness of an actual electroplating product, further improve the point-plating anode conical jet device technical level, further improve the uniformity of the plating film thickness of the semiconductor lead frame, and meet the requirements of high-end performance and high quality of high-end semiconductor lead frame products.

Description

Technical Field

[0001] The invention relates to a method and system for constructing a spot plating anode model based on a cone jet, and belongs to the technical field of integration of artificial intelligence control and spot plating anode devices. Background Art

[0002] Electron point plating anodes are a crucial component of systems used in the metal plating process of semiconductor lead frames, sensitive to the effects of local electrochemistry and the physical spatial environment on metal ions. They are widely used in high-end manufacturing fields such as the development of micro-precision electronic products, electrochemical research, and metal plating of semiconductor lead frames. During the production and operation of semiconductor lead frame plating, complex factors influence the deposition of metal ions in the plating solution on the surface of the semiconductor lead frame, including the electron point plating anode, the diameter of the piping used to house it, and the flow rate of the electroplating solution pump. Consequently, these factors can interfere with the actual metal coating, resulting in various differences. In mild cases, this can lead to difficulty controlling the coating area, rapid deposition, and roughness. In severe cases, this can result in a lack of coating density and uneven thickness distribution, making it difficult to meet the high-end performance requirements of semiconductor lead frames.

[0003] At present, the screening method for verifying the optimal conditions of electronic spot plating anodes is the golden section method. In the process of its performance evaluation, a large amount of experimental work is required for the range of diameters of electronic spot plating through holes, the diameter of its configuration pipeline and the flow rate of the electroplating solution pump. At the same time, a matching electroplating equipment module is required to process and evaluate the metal coating samples of semiconductor electronic components. The research and development cycle is long, and it is difficult to adapt to the current semiconductor electronic components and the rapid development of various precision chemical plating solutions. Therefore, exploring and creating a method and system for constructing an electronic spot plating anode model with a fast cycle, short precision and metal coating has become a very important topic. Summary of the Invention

[0004] To solve the above problems, the present invention provides a method and system for constructing a spot plating anode model based on a cone jet, so as to meet the requirements of accurate screening of optimal conditions for electronic spot plating anodes and shortening the R&D cycle during the metal plating process of high-end semiconductor lead frames.

[0005] In order to achieve the above object, the technical solution adopted by the present invention is as follows:

[0006] In a first aspect, the present invention provides a method for constructing a spot plating anode model, the method comprising:

[0007] Step 1: providing a spot plating anode mechanism, the spot plating anode mechanism comprising an outer cylinder and an inner cylinder disposed within the outer cylinder, the outer cylinder being provided with a conical anode jet flow hole;

[0008] Step 2: Assemble the plating device including the anode point plating mechanism, and configure a pump and a flow meter for conveying the plating solution;

[0009] Step 3: Select the metal type and density data of the plating solution, and place the selected plating solution into the tank of the plating device;

[0010] Step 4: placing the semiconductor lead frame to be processed at a predetermined position of the plating device mechanism;

[0011] Step 5: Calculate the jet range of the cone-shaped anode jet flow hole of the point plating anode mechanism H ;

[0012] Step 6: Based on the kinetic energy of the plating solution fluid k Equation and plating solution fluid dissipation rate e The equations are used to construct the point plating anode model;

[0013] Step 7: Optimize the simulation of the plating solution jet range by the point plating anode model in step 6 H 模拟射程 , used in high-end plating equipment modules for testing to obtain the actual plating solution jet range H 实测射程

[0014] Step 8: Compare H 模拟射程 and H 实测射程 , if:

[0015] (100%-0.8%) H 模拟射程 ≤ H 实测射程 ≤ (100% + 0.8%) H 模拟射程 Formula 4

[0016] Then confirm the point plating anode model; otherwise, use the actual plating solution jet range H 实测射程 As a benchmark, the simulated plating solution jet range was corrected H 模拟射程 And loop step 6 until the condition is met.

[0017] In one embodiment of the present invention, in step 5, the jet range of the cone-shaped anode jet flow hole of the point plating anode mechanism is calculated by formula 1: H :

[0018]

[0019] because

[0020] therefore, Formula 1

[0021] Where: H is the jet range, m;

[0022] P is the pump power, Kg·m / h;

[0023] or is the pump efficiency, %;

[0024] is the pump flow rate, Kg / h;

[0025] m is a parameter associated with the spot plating anode.

[0026] In one embodiment of the present invention, the kinetic energy of the plating solution fluid k The equation is:

[0027] Formula 2

[0028] In formula 2, r is the fluid density, k is the turbulent energy, e is the turbulent dissipation rate, t For time, is the velocity component, m t is the turbulent viscosity value, P is the parameter, G is the turbulent kinetic energy generated by the mean velocity gradient, Y M is the effect of wave expansion in the jet on the total dissipation rate;

[0029] In formula 2, express t The continuous turbulent energy differential term at time , express x j The continuous turbulent energy and the differential term of the pulsating average energy in the direction are shown in the right side of the equal sign. express x j The energy differential term shown in the direction, P k is the turbulence generation term, G b is the turbulent kinetic energy term generated by the mean velocity gradient, hey represents the energy correction term corresponding to the fluid density and turbulent dissipation rate, Y Mrepresents the contribution of the fluctuating expansion to the total dissipation rate in a compressible jet;

[0030] The plating solution fluid dissipation rate e The equation is:

[0031] Formula 3

[0032] In formula 3, r is the fluid density, k is the turbulent energy, e is the turbulent dissipation rate, t For time, is the velocity component, m t is the turbulent viscosity value, P is the parameter, G is the turbulent kinetic energy generated by the mean velocity gradient;

[0033] In formula 3, express t The differential term of the turbulent dissipation rate at time , express x i The continuous dissipation rate in the direction and the differential term of the average pulsation energy, the right side of the equal sign is the specific expansion; express x j The energy differential term in the direction shown, The first correction term representing the jet energy of the point plating anode, The second correction term represents the jet energy of the point plating anode; C ε1 , C ε2 and C ε3 is the correction factor.

[0034] In one embodiment of the present invention, the step 7 specifically includes: selecting the simulated plating solution jet range obtained according to the point plating anode jet inlet and outlet diameters H , and the calculation equation of the anode cone jet from step 6 is converted into the jet range H Shaft power in Formula 1 P The relationship between the kinetic energy of the plating solution fluid in Equation 2 is used to optimize the obtained simulated plating solution jet range. H 模拟射程 , applied to the high-end plating equipment module for testing to obtain the actual plating solution jet range H 实测射程 .

[0035] In one embodiment of the present invention, step 8 further includes discarding the corrected data that still does not satisfy formula 4 after multiple cycles of optimization.

[0036] In one embodiment of the present invention, the metal types of the plating solution include:

[0037] Single layer plating Au, Ag, Ni, Sn, Cu, Pd, Rh, Pt;

[0038] Alloy plating: Au-Ni, Pd-Ni, Ni-P, W-Ni, Ag-Sn, Au-Sn, Rh-Ru and Pt-Rh or Au-W-Ni ternary or above alloy metals.

[0039] In one embodiment of the present invention, the inner diameter of the conical anode jet flow hole is greater than the outer diameter; the inner cylinder is provided with a jet flow opening in the form of a long trapezoid, and the inner width of the jet flow opening is greater than the outer width.

[0040] In a second aspect, the present invention provides a system for constructing a spot plating anode model, for implementing the method for constructing the spot plating anode model, the system comprising:

[0041] The spot plating anode mechanism comprises an outer cylinder and an inner cylinder disposed within the outer cylinder, wherein the outer cylinder is provided with a conical anode jet flow hole; the spot plating anode mechanism is used to form a jet of plating solution through the conical anode jet flow hole and eject the jet toward the local plating area of ​​the semiconductor lead frame, while the spot plating anode acts as a conductive carrier;

[0042] The plating device mechanism includes a point plating anode mechanism, a pump circulation filtration system for conveying plating solution and equipped with a flow meter, and a plating electrolysis power supply; the plating device mechanism is used to calculate the simulated plating solution jet range obtained by the selected point plating anode jet outlet diameter D H 模拟射程 , used as the standard setting value for actual testing;

[0043] The point plating anode cone jet calculation system is used to calculate various parameters of the point plating anode and various characteristic data of the plating solution through formula 1, formula 2 and formula 3 to obtain the simulated plating solution jet range H 模拟射程 and use it as a set standard value for actual testing of the plating device;

[0044] Spot plating anode jet range control module, used for real-time detection and control of the cone jet range of spot plating anodes H 实测射程 Jet range of simulated plating solution H 模拟射程 data, and detect and adjust the difference in real time H模拟射程 - H 模拟射程 data;

[0045] The intelligent control system of the spot anode plating device is used to detect and control the relative positions of the outer cylinder and inner cylinder jet outlets of the spot anode mechanism in real time; synchronously adjust the actual cone jet range H 实测射程 The results are fed back to the spot plating anode cone jet calculation system in real time, and the simulated spot plating anode jet range is H 模拟射程 The results are judged and real-time test data is provided;

[0046] The spot plating anode jet range discrimination module is used to detect the cone jet range of the spot plating anode in real time. H 实测射程 Jet range of simulated plating solution H 模拟射程 Data is judged by formula 4, and the jet range that satisfies formula 4 is H 模拟射程 The data enters the point-plating anode cone jet model training system for training to optimize the measured cone jet range H 实测射程 Jet range of simulated plating solution H 模拟射程 The difference between the data H 实测射程 - H 模拟射程 , improve the cone jet range of point plating anode H 实测射程 On the contrary, the jet range does not meet the requirements of formula 4. H 模拟射程 Data, based on the measured cone jet range H 实测射程 The difference is re-corrected according to the point plating anode cone jet calculation system to obtain the corrected simulated plating solution jet range H 模拟射程 , and conduct actual testing again as the standard setting value; if the spot plating anode jet range data still cannot meet Formula 4 after cyclic training and actual testing, it will be discarded;

[0047] Point plating anode cone jet model training system, used to determine the qualified jet range of formula 4 H 模拟射程 Data and corresponding measured cone jet range Q 实测射程 The data is used for training to build an optimized point plating anode model based on cone jet.

[0048] In a third aspect, the present invention provides a computer-readable storage medium storing computer instructions, wherein the computer instructions are executed by a processor to perform the method described above.

[0049] In a fourth aspect, the present invention provides a computer program product, wherein the computer program product stores computer instructions, and the computer instructions are executed by a processor to perform the method described.

[0050] The beneficial effects of the present invention are:

[0051] The invention optimizes the spot plating anode model based on cone jet and implements training through the spot plating anode cone jet model training system. The spot plating anode jet range constructed is H 模拟射程 Data, and the actual operation test of the coating device mechanism to obtain the measured cone jet range H 实测射程 The difference between the data H 实测射程 - H 模拟射程 ; When the difference satisfies the condition of formula 4, the smaller the difference, the more accurate the constructed point plating anode model; on the contrary, the point plating anode jet range data that still cannot meet formula 4 through the implementation of cyclic training will be discarded, and this standard will strictly control the high-end quality requirements of the point plating anode cone jet plating system.

[0052] Based on the optimization results of the double-cylinder structure of the inner and outer cylinders of the spot plating anode of the present invention, the overlap degree of the long trapezoidal jet outlet and the cone inlet of the spot plating anode outer cylinder can be automatically fine-tuned within a limited range by fine-tuning the inner cylinder of the spot plating anode clockwise, thereby realizing the actual range of the plating solution jet shot from the outer cylinder of the spot plating anode to the local plating area of ​​the semiconductor lead frame. H 实测射程 Simulation range with built model H 模拟射程 The difference is small, stable and easy to control, that is, the intelligent integration of the inner and outer double-tube structure of the spot plating anode and the spot plating anode cone jet model system can accurately meet the management needs of the spot plating anode jet range threshold formula 4.

[0053] Based on the optimization results of the spot plating anode model of the present invention, the design and manufacturing method conditions of the spot plating anode cone jet of various semiconductor lead frames can be quickly established in the actual production process, and then by obtaining the optimal control method of the spot plating anode cone jet of the semiconductor lead frame, not only can the accuracy of the local coating thickness of the semiconductor lead frame be quickly simulated, and the error with the actual electroplating product coating thickness be greatly reduced, but the technical level of the spot plating anode cone jet device can also be further improved, and the uniformity of the semiconductor lead frame coating thickness can be further improved, so as to meet the high-end performance and high quality requirements of high-end semiconductor lead frame products. BRIEF DESCRIPTION OF THE DRAWINGS

[0054] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0055] Figure 1 It is a schematic diagram of the assembly of the outer cylinder and the inner cylinder of the spot plating anode mechanism provided by the present invention.

[0056] Figure 2 It is a structural schematic diagram of the outer cylinder of the spot plating anode mechanism provided by the present invention.

[0057] Figure 3 It is a structural schematic diagram of the inner cylinder of the spot plating anode mechanism provided by the present invention.

[0058] Figure 4 It is a structural schematic diagram of a conical anode jet flow hole of the spot plating anode mechanism provided by the present invention.

[0059] Figure 5 It is a composition diagram of a construction system of a point plating anode model based on a cone jet provided by the present invention.

[0060] Figure 6 Schematic diagram of the change of the point-plating anode cone range over time in the third embodiment of the present invention.

[0061] Figure 7 It is a schematic diagram of the change of the projection range of the point-plated anode cone over time in the comparative example of the present invention.

[0062] In the figure: 110, inner cylinder; 120, outer cylinder; 200, spot plating anode mechanism; 300, plating device mechanism; 400, spot plating anode cone jet operation system; 500, spot plating anode jet range control module; 600, spot plating anode plating device intelligent control system; 700, spot plating anode jet range discrimination module; 800, spot plating anode cone jet model training system. DETAILED DESCRIPTION

[0063] The technical solution of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the embodiments described are only some embodiments of the present invention, not all embodiments. All other embodiments obtained by ordinary technicians in this field based on the embodiments of the present invention without making any creative efforts shall fall within the scope of protection of the present invention.

[0064] Example 1:

[0065] like Figure 1 to Figure 5 As shown, this embodiment provides a method for constructing a point plating anode model based on a cone jet, comprising:

[0066] Step 1: Store the design dimensions of the spot anode plating mechanism 200 in the database of the intelligent control system:

[0067] like Figure 1 As shown, the spot plating anode mechanism 200 includes an outer cylinder 120 and an inner cylinder 110 arranged in the outer cylinder 120; the selected outer cylinder 120 has a diameter of 250 mm; the outer cylinder 120 has a height of 70 mm; the outer cylinder 120 has a wall thickness of 5 mm; the inner cylinder 110 has a diameter of 230 mm; the inner cylinder 110 has a height of 120 mm; and the inner cylinder 110 has a wall thickness of 5 mm.

[0068] Furthermore, if Figure 2 As shown, the outer cylinder 120 is provided with four rows and four columns of anode jet flow holes. The anode jet flow holes are cone-shaped, with an inner diameter greater than an outer diameter. Specifically, the inner diameter is 6 mm and the outer diameter is 3 mm.

[0069] like Figure 3 As shown, the inner cylinder 110 is provided with four rows of jet flow openings, each of which is in the shape of a long trapezoid, with an inner width greater than an outer width. Specifically, the inner width is 5 mm, the outer width is 2 mm, and the outer outlet length is 29 mm.

[0070] Step 2: Assemble the plating device mechanism 300 including the anode point plating mechanism 200, and configure corresponding pumps and flow meters for conveying the plating solution;

[0071] Step 3: Select the metal type and density data of the plating solution, place the selected plating solution into the tank of the plating device mechanism 300, and input the determined metal density data into the anode plating cone jet operation system 400;

[0072] Step 4: placing the semiconductor lead frame to be processed at a predetermined position of the plating device mechanism 300;

[0073] Step 5: Calculate the jet range of the cone-shaped anode jet flow hole of the spot plating anode mechanism 200 H The anode plating mechanism 200 is a cone-shaped anode jet flow range H , and the jet outlet diameter D The relationship is:

[0074]

[0075] because

[0076] therefore, Formula 1

[0077] Where: H is the jet range, m;

[0078] P is the pump power, Kg·m / h;

[0079] or is the pump efficiency, %;

[0080] is the pump flow rate, Kg / h;

[0081] m are parameters associated with spot plating anodes;

[0082] Step 6: Construct a point plating anode model based on the operation equation of the point plating anode cone jet pattern for intelligently controlling the transport of the plating solution, wherein the operation equation of the point plating anode cone jet pattern includes the kinetic energy of the plating solution fluid k Equation and solution fluid dissipation rate e equation;

[0083] The plating solution fluid kinetic energy k The equation is:

[0084] Formula 2

[0085] Plating solution fluid kinetic energy k The equation can simulate the kinetic energy distribution scenario of the plating solution passing through the through-hole of the spot plating anode cone and predict the energy required for the spot plating anode cone jet; it can also meet the jet impact on the specified surface area of ​​the semiconductor lead frame.

[0086] Plating solution fluid dissipation rate e The equation is:

[0087] Formula 3

[0088] Plating solution fluid dissipation rate eThe equation can simulate the jet impact, which is very similar to the process in which the plating solution fluid of the present invention is ejected from the spray outlet of the point plating anode and sprayed onto the opposite surface of the semiconductor lead frame to collide.

[0089] In formula 2, r is the fluid density, k is the turbulent energy, e is the turbulent dissipation rate, t For time, is the velocity component, m t is the turbulent viscosity value, P is the parameter, G is the turbulent kinetic energy generated by the mean velocity gradient, Y M is the effect of wave expansion in the jet on the total dissipation rate;

[0090] In formula 2, express t The continuous turbulent energy differential term at time , express x j The continuous turbulent energy and the differential term of the pulsating average energy in the direction are shown in the right side of the equal sign. express x j The energy differential term shown in the direction, P k is the turbulence generation term, G b is the turbulent kinetic energy term generated by the mean velocity gradient, hey represents the energy correction term corresponding to the fluid density and turbulent dissipation rate, Y M represents the contribution of the fluctuating expansion to the total dissipation rate in a compressible jet;

[0091] In formula 3, r is the fluid density, k is the turbulent energy, e is the turbulent dissipation rate, t For time, is the velocity component, m t is the turbulent viscosity value, P is the parameter, G is the turbulent kinetic energy generated by the mean velocity gradient;

[0092] In formula 3, express t The differential term of the turbulent dissipation rate at time , express x iThe continuous dissipation rate in the direction and the differential term of the average pulsation energy, the right side of the equal sign is the specific expansion; express x j The energy differential term in the direction shown, The first correction term representing the jet energy of the point plating anode, The second correction term representing the jet energy of the spot plating anode.

[0093] In the first and second amendments C ε1 , C ε2 and C ε3 It is a correction coefficient closely related to the spot plating anode spraying system of the present invention. Only by selecting the corresponding correction coefficient within the spot plating anode spraying range specified by the present invention can the accurate simulation spraying range standard be obtained. H 模拟射程 .

[0094] Based on formula 1, formula 2 and formula 3, the present invention can simulate the impact of the spot plating anode jet, that is, the plating solution fluid is ejected from the spray outlet of the spot plating anode and impacts the surface of the semiconductor lead frame; at the same time, through the correction coefficient closely related to the intelligent control of the spot plating anode jet impact mode of the present invention C ε1 、 C ε2 、 C ε3 Conduct training optimization to achieve excellent intelligent control of point anode plating, and quickly obtain the construction method and system of precision jet point anode plating model.

[0095] Step 7: Select the simulated plating solution jet range obtained based on the point plating anode jet inlet and outlet diameters H , and the calculation equation of the anode cone jet from step 6 is converted into the jet range H Shaft power in Formula 1 P The obtained simulated plating solution jet range is further optimized by correlating it with the plating solution fluid kinetic energy in formula 2. H 模拟射程 , applied to the high-end plating equipment module for testing to obtain the actual plating solution jet range H 实测射程 ;

[0096] Step 8: Simulated plating solution jet range based on point plating anode H 模拟射程 , and the actual tested plating solution jet range H 实测射程 For comparison:

[0097] (100%-0.8%) H 模拟射程 ≤ H 实测射程 ≤ (100% + 0.8%) H 模拟射程 Formula 4

[0098] The results of the actual test of the plating solution jet range satisfying Formula 4 H 实测射程 , and the corresponding point plating anode jet outlet diameter D The calculated simulated plating solution jet range H 模拟射程 The difference H 实测射程 - H 模拟射程 The smaller it is, the more conducive it is to further training and optimization of the spot plating anode cone jet model and obtaining the accurate jet range of the plating solution;

[0099] If the formula 4 is not satisfied, the actual test of the plating solution jet range H 实测射程 As a benchmark, the jet range of the simulated plating solution H 模拟射程 Make corrections; and loop the process of step 6 until formula 4 is satisfied. The corrected data can be further trained and optimized. Otherwise, the corrected data that still does not satisfy formula 4 after multiple cycles of optimization will be discarded. This standard is used to strictly control the high-end quality requirements of the point anode cone jet plating system.

[0100] Optionally, the metal types of the electronic plating solution include:

[0101] Single layer plating Au, Ag, Ni, Sn, Cu, Pd, Rh, Pt;

[0102] Alloy plating: Au-Ni, Pd-Ni, Ni-P, W-Ni, Ag-Sn, Au-Sn, Rh-Ru and Pt-Rh or Au-W-Ni ternary or above alloy metals.

[0103] Example 2:

[0104] This embodiment provides a system for constructing a point plating anode model based on a cone jet, which is used to implement the method for constructing a point plating anode model based on a cone jet described in the first embodiment, including:

[0105] The spot-plating anode mechanism 200 includes an outer cylinder 120 and an inner cylinder 110 disposed within the outer cylinder 120. The outer cylinder 120 is provided with a conical anode jet flow hole. The spot-plating anode mechanism 200 is used to form a jet of plating solution through the conical anode jet flow hole and direct it toward a localized plating area of ​​the semiconductor lead frame. By fine-tuning the inner cylinder 110, the plating solution is more accurately directed toward the localized area of ​​the semiconductor lead frame. At the same time, the spot-plating anode acts as a conductive carrier.

[0106] The plating device mechanism 300 includes a point plating anode mechanism 200, a pump circulation filtration system for conveying plating solution and equipped with a flow meter, and a plating electrolysis power supply; the plating device mechanism 300 is used to calculate the simulated plating solution jet range obtained by the selected point plating anode jet outlet diameter D. H 模拟射程 , used as the standard setting value for actual testing;

[0107] The point plating anode cone jet calculation system 400 is used to calculate various parameters of the point plating anode and various characteristic data of the plating solution through formula 1, formula 2 and formula 3 to obtain the simulated plating solution jet range. H 模拟射程 and use it as a set standard value for actual testing of the plating device;

[0108] The spot plating anode jet range control module 500 is used to detect and control the cone jet range of the spot plating anode in real time. H 实测射程 Jet range of simulated plating solution H 模拟射程 data, and detect and adjust the difference in real time H 模拟射程 - H 模拟射程 Data; Among them, the real-time detection and control of the cone jet range of the point-plated anode is achieved by real-time adjustment of the pump flow rate of the pump circulation filtration system equipped with a flow meter;

[0109] The intelligent control system 600 of the spot anode plating device is used to detect and control the relative positions of the jet outlets of the outer cylinder 120 and the inner cylinder 110 of the spot anode plating mechanism 200 in real time; H 实测射程 The results are fed back to the spot plating anode cone jet calculation system 400 in real time, and the simulated spot plating anode jet range is H 模拟射程 The results are judged and real-time test data is provided;

[0110] The spot plating anode jet range determination module 700 is used to determine the cone jet range of the spot plating anode detected in real time. H实测射程 The jet range of the simulated plating solution H 模拟射程 The data, by formula 4 implementation discriminant, meet the jet range of formula 4 H 模拟射程 Data into point anode cone jet model training system 800 for training, optimization of measured cone jet range H 实测射程 The jet range of the simulated plating solution H 模拟射程 The difference between the data H 实测射程 - H 模拟射程 The jet range of the simulated plating solution H 实测射程 The control precision; otherwise, the jet range of formula 4 is not satisfied H 模拟射程 Data, according to the measured cone jet range H 实测射程 The difference between the data, re-according to the point anode cone jet operation system 400, to obtain the corrected jet range of the simulated plating solution H 模拟射程 , as a standard set value again for actual test; if still can't meet the point anode jet range data of formula 4 through the cycle training and actual test will be discarded;

[0111] Point anode cone jet model training system 800, for formula 4 discriminant qualified jet range H 模拟射程 Data and corresponding measured cone jet range Q 实测射程 Data training, to realize the construction of optimized point anode model based on cone jet.

[0112] The embodiment realizes the function of rapid, accurate screening, classification and discrimination of the model system of the cone jet range of the electronic point anode rotating flow by the constructed point anode model based on cone jet.

[0113] Example three:

[0114] The embodiment combines the actual selected case, and describes the construction process of the rapid operation, accurate optimization, classification and discrimination model data processing system of the point anode system of the cone jet in detail. The embodiment adopts the point anode mechanism 200 as shown in Figure 1 , and the specific size is described in detail in step 1 of example one, and the jet range thereof is 50-300 mm / s.

[0115] In this embodiment, the cone jet range of the set point anode plating is 100 mm / s, that is, the modeling standard jet range H 模拟射程 The speed is 100 mm / s. The spot anode plating device and the intelligent control system of the present invention are used to perform actual measurement on a specific silver plating solution and a semiconductor lead frame high-speed silver plating device. The operation time is 100 minutes, and the measured jet range is read and recorded every 10 seconds during the operation. H 实测平均射程 Data, the average value of 30 data points every five minutes H 实测平均射程 like Figure 6 As shown:

[0116] from Figure 6 It can be seen that the measured results of the point-plating anode plating device and its intelligent control system of the present invention are:

[0117] 99.2< H 实测平均射程 <100.9

[0118] 99.2-100< H 实测平均射程 - H 模拟射程 <100.9-100

[0119] Therefore, -0.8< △H <0.9

[0120] The above results clearly confirm that under the actual measurement conditions of the present invention, the allowable deviation of the cone jet range of the point-plated anode is 100%-0.8%< H 实测平均射程 <100% + 0.9%; The method and system for constructing a point plating anode model based on a cone jet established by the present invention are characterized in that the interval range of the operation time of the operation equation of the intelligent control system 600 of the point plating anode plating device of the present invention can be set to 1 second ≤ time interval ≤ 60 seconds according to the intelligent control accuracy requirements; it can be seen from the formula that the smaller the interval of the operation time, the greater the cone jet range of the measured point plating anode per unit time. H 实测平均射程 The more times you train, the closer the jet range results are to the modeling settings. H 模拟射程 The standard value is 100 mm / s; in other words, the cone jet range of the spot plating anode in real-time testing H 实测平均射程 As long as the set H 模拟射程 If there is a slight deviation from the standard value, the operator can instantly perform calculation training for the budding state of the slight deviation and maintain the cone jet range of the real-time anode plating. H实测平均射程 Infinitely close to the simulation setting H 模拟射程 The standard value is 100 mm / s, which is the measured cone jet range of the point plating anode H 实测平均射程 The threshold range of Formula 4 can be satisfied.

[0121] Furthermore, Figure 5 The results of the cone jet range of the point-plated anode at every five-minute interval and the change in the cone jet range of the point-plated anode are shown in Table 1.

[0122] Table 1 Results of cone jet range of point-plated anode and variation of cone jet range of point-plated anode in Example 3

[0123]

[0124] Comparative Example:

[0125] Except for deactivating the spot anode plating device and its intelligent control system of the present invention, other setting conditions and data are the same as those in Example 1:

[0126] The cone jet range of the set-point anode is 100 mm / s, which is the modeling standard jet range. H 模拟射程 The actual measurement is 100 mm / s. The specific silver plating solution and the semiconductor lead frame high-speed silver plating device are used for actual measurement. The running time is 100 minutes. During the operation, a reading and recording of the actual jet range is recorded every 10 seconds. H 实测平均射程 Data, the average value of 30 data points every five minutes H 实测平均射程 like Figure 7 shown.

[0127] from Figure 7 It can be seen that the measured results of the point-plating anode plating device and its intelligent control system of the present invention are:

[0128] 96.4< H 实测平均射程 <103.5

[0129] 96.4-100< H 实测平均射程 - H 标准射程 <103.5-100

[0130] Therefore, -3.6< △H <3.5

[0131] Furthermore, Figure 7The results of the cone jet range of the point-plated anode at every five-minute interval and the change in the cone jet range of the point-plated anode are shown in Table 2.

[0132] Table 2 Results of cone jet range of point-plated anode and change of cone jet range of point-plated anode in comparative example

[0133]

[0134] The above results show that under the actual measurement conditions of the comparative example, the allowable deviation of the cone jet range of the spot plating anode is 100%-3.6%< H 实测平均射程 <100% + 3.5%; the minimum deviation from the standard jet range is -3.6%, and the maximum deviation is 3.5%; therefore, in the comparative prior art, the deviation of the cone jet range is large, and a stable jet range of the plating solution cannot be provided, resulting in uneven distribution of the coating film thickness of the semiconductor lead frame, affecting the signal transmission function of the semiconductor chip electronic product.

[0135] The present invention optimizes the spot plating anode model based on cone jet and implements training through the spot plating anode cone jet model training system 800, and the spot plating anode jet range constructed is H 模拟射程 The measured cone jet range is obtained by the actual operation test of the coating device mechanism 300. H 实测射程 The difference between the data H 实测射程 - H 模拟射程 ; When the difference satisfies the condition of formula 4, the smaller the difference, the more accurate the constructed point plating anode model; on the contrary, the point plating anode jet range data that still cannot meet formula 4 through the implementation of cyclic training will be discarded, and this standard will strictly control the high-end quality requirements of the point plating anode cone jet plating system.

[0136] Based on the optimization results of the double-cylinder structure of the spot plating anode inner cylinder 110 and outer cylinder 120 of the present invention, by fine-tuning the spot plating anode inner cylinder 110 clockwise, the overlap degree of the long trapezoidal body jet outlet and the cone inlet of the spot plating anode outer cylinder 120 can be automatically fine-tuned within a limited range, thereby realizing the actual range of the plating solution jet shot from the spot plating anode outer cylinder 120 to the local plating area of ​​the semiconductor lead frame. H 实测射程 Simulation range with built model H 模拟射程 The difference is small, stable and easy to control, that is, the intelligent integration of the inner and outer double-tube structure of the spot plating anode and the spot plating anode cone jet model system can accurately meet the management needs of the spot plating anode jet range threshold formula 4.

[0137] In summary, the present invention solves the practical problems in the prior art that the allowable deviation of the cone jet range of the spot plating anode is large, the coating film thickness of the semiconductor lead frame is unevenly distributed, and the signal transmission function of the semiconductor chip electronic product is affected. Through the optimization results of the spot plating anode model based on the cone jet of the present invention, the design and manufacturing method conditions of the spot plating anode cone jet of various different semiconductor lead frames can be quickly established in the actual production process, and then by obtaining the optimal control method of the spot plating anode cone jet of the semiconductor lead frame, not only can the accuracy of the local coating film thickness of the semiconductor lead frame be quickly simulated, and the error with the actual electroplating product coating film thickness can be greatly reduced, but also the technical level of the spot plating anode cone jet device can be further improved, and the uniformity of the semiconductor lead frame coating film thickness can be further improved, so as to meet the high-end performance and high quality requirements of high-end semiconductor lead frame products.

[0138] Some steps in the embodiments of the present invention may be implemented using software, and the corresponding software program may be stored in a readable storage medium, such as a CD or a hard disk.

[0139] The above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit the same. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. These modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the various embodiments of the present invention, and should all be included in the scope of protection of the present invention.

Claims

1. A method for constructing a spot plating anode model, characterized in that: The method comprises: Step 1: providing a spot-plating anode mechanism (200), the spot-plating anode mechanism (200) comprising an outer cylinder (120) and an inner cylinder (110) disposed within the outer cylinder (120), wherein the outer cylinder (120) is provided with a conical anode jet flow hole; Step 2: Assembling a plating device mechanism (300) including the point plating anode mechanism (200), and configuring a pump and a flow meter for conveying the plating solution; Step 3: Select the metal type and density data of the plating solution, and place the selected plating solution into the tank of the plating device mechanism (300); Step 4: placing the semiconductor lead frame to be processed at a predetermined position of the plating device mechanism (300); Step 5: Calculate the jet range of the cone-shaped anode jet flow hole of the point plating anode mechanism (200) H ; Step 6: Based on the kinetic energy of the plating solution fluid k Equation and plating solution fluid dissipation rate ε The equations are used to construct the point plating anode model; Step 7: Optimize the simulation of the plating solution jet range by the point plating anode model in step 6 H 模拟射程 , used in high-end plating equipment modules for testing to obtain the actual plating solution jet range H 实测射程； Step 8: Compare H 模拟射程 and H 实测射程 , if: (100%-0.8%) H 模拟射程 ≤ H 实测射程 ≤ (100% + 0.8%) H 模拟射程 Formula 4 Then confirm the point plating anode model; otherwise, use the actual plating solution jet range H 实测射程 As a benchmark, correct the simulated plating solution jet range H 模拟射程 And loop step 6 until the condition is met; The plating solution fluid kinetic energy k The equation is: Formula 2 The plating solution fluid dissipation rate ε The equation is: Formula 3 in, ρ is the fluid density, k is the turbulent energy, ε is the turbulent dissipation rate, t For time, is the velocity component, μ t is the turbulent viscosity value, P is a parameter; express t The continuous turbulent energy differential term at time , express x j The continuous turbulent energy and the differential term of the pulsating average energy in the direction are shown in the right side of the equal sign. express x j The energy differential term shown in the direction, P k is the turbulence generation term, G b is the turbulent kinetic energy term generated by the mean velocity gradient, ρε represents the energy correction term corresponding to the fluid density and turbulent dissipation rate, Y M represents the contribution of the fluctuating expansion in a compressible jet to the total dissipation rate; express t The differential term of the turbulent dissipation rate at time , express x i The continuous dissipation rate in the direction and the differential term of the average pulsation energy, the right side of the equal sign is the specific expansion; express x j The energy differential term in the direction shown, The first correction term representing the jet energy of the point plating anode, The second correction term represents the jet energy of the point plating anode; C ε1 , C ε2 and C ε3 is the correction factor.

2. The method for constructing a spot plating anode model according to claim 1, wherein In step 5, the jet range of the cone-shaped anode jet flow hole of the point plating anode mechanism (200) is calculated by formula 1. H : because therefore, Formula 1 Where: H is the jet range, m; P is the pump power, Kg·m / h; η is the pump efficiency, %; is the pump flow rate, Kg / h; m is a parameter associated with the spot plating anode.

3. The method for constructing a spot plating anode model according to claim 2, wherein: The step 7 specifically includes: selecting the simulated plating solution jet range obtained according to the inlet and outlet diameters of the spot plating anode jet H , and the calculation equation of the anode cone jet from step 6 is converted into the jet range H Shaft power in Formula 1 P The relationship between the kinetic energy of the plating solution fluid in Equation 2 is used to optimize the obtained simulated plating solution jet range. H 模拟射程 , applied to the high-end plating equipment module for testing to obtain the actual plating solution jet range H 实测射程 .

4. The method for constructing a spot plating anode model according to claim 1, wherein The step 8 also includes discarding the corrected data that still does not satisfy the formula 4 after multiple cycles of optimization.

5. The method for constructing a spot plating anode model according to claim 1, wherein: The metal types of the plating solution include: Single layer plating Au, Ag, Ni, Sn, Cu, Pd, Rh, Pt; Alloy plating: Au-Ni, Pd-Ni, Ni-P, W-Ni, Ag-Sn, Au-Sn, Rh-Ru and Pt-Rh or Au-W-Ni ternary or above alloy metals.

6. The method for constructing a spot plating anode model according to claim 1, wherein: The inner diameter of the cone-shaped anode jet flow hole is greater than the outer diameter; the inner cylinder (110) is provided with a jet flow opening in the form of a long trapezoid, and the inner width of the jet flow opening is greater than the outer width.

7. A system for constructing a spot plating anode model, characterized in that: A method for constructing a spot plating anode model according to any one of claims 2 to 6, the system comprising: The spot plating anode mechanism (200) comprises an outer cylinder (120) and an inner cylinder (110) disposed within the outer cylinder (120), wherein the outer cylinder (120) is provided with a conical anode jet flow hole; the spot plating anode mechanism (200) is used to form a jet of a plating solution through the conical anode jet flow hole, and to eject the jet toward a local plating area of ​​a semiconductor lead frame, while the spot plating anode acts as a conductive carrier; The plating device mechanism (300) comprises a point plating anode mechanism (200), a pump circulation filtration system for conveying plating solution and equipped with a flow meter, and a plating electrolysis power supply; the plating device mechanism (300) is used to calculate the simulated plating solution jet range obtained by the selected point plating anode jet outlet diameter D. H 模拟射程 , used as the standard setting value for actual testing; A point plating anode cone jet calculation system (400) is used to calculate various parameters of the point plating anode and various characteristic data of the plating solution through formula 1, formula 2 and formula 3 to obtain a simulated plating solution jet range. H 模拟射程 and use it as a set standard value for actual testing of the plating device; A spot plating anode jet range control module (500) is used for real-time detection and regulation of the cone jet range of the spot plating anode. H 实测射程 Jet range of simulated plating solution H 模拟射程 Data, and real-time detection and regulation of the difference H 模拟射程 - H 模拟射程 data; The intelligent control system (600) of the spot anode plating device is used for real-time detection and regulation of the relative positions of the jet outlets of the outer cylinder (120) and the inner cylinder (110) of the spot anode plating mechanism (200); synchronously adjusting the actual cone jet range H 实测射程 The result is fed back to the spot plating anode cone jet calculation system (400) in real time, and the simulated spot plating anode jet range is H 模拟射程 The results are judged and real-time test data is provided; The spot plating anode jet range discrimination module (700) is used for real-time detection of the cone jet range of the spot plating anode. H 实测射程 Jet range of simulated plating solution H 模拟射程 Data is judged by formula 4, and the jet range that satisfies formula 4 is H 模拟射程 The data enters the point-plated anode cone jet model training system (800) for training to optimize the measured cone jet range. H 实测射程 Jet range of simulated plating solution H 模拟射程 The difference between the data H 实测射程 - H 模拟射程 , improve the cone jet range of point plating anode H 实测射程 On the contrary, the jet range does not meet the requirements of formula 4. H 模拟射程 Data, based on the measured cone jet range H 实测射程 The difference is re-corrected according to the point plating anode cone jet calculation system (400), and the corrected simulated plating solution jet range is obtained. H 模拟射程 , and conduct actual testing again as the standard setting value; if the spot plating anode jet range data still cannot meet Formula 4 after cyclic training and actual testing, it will be discarded; Point plating anode cone jet model training system (800), used to judge the qualified jet range of formula 4 H 模拟射程 Data and corresponding measured cone jet range Q 实测射程 The data is used for training to build an optimized point plating anode model based on cone jet.

8. A computer-readable storage medium, characterized in that The computer-readable storage medium stores computer instructions, and the computer instructions are used by a processor to execute the method according to any one of claims 1 to 6.

9. A computer program product, characterized in that The computer program product stores computer instructions, and the computer instructions are used by a processor to execute the method according to any one of claims 1 to 6.

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