Semiconductor etching equipment

Abstract

The invention provides semiconductor etching equipment. A gas distribution assembly in the semiconductor etching equipment comprises a cover plate, a first distribution disc and a second distribution disc, the cover plate is provided with a first air inlet, and a first air chamber is defined by the cover plate and the first distribution disc. The first distribution disc is provided with a plurality of first flow channels, and outlets of the first flow channels are first flow guide sections with gradually-enlarged cross sectional areas; the second distribution disc is provided with a second air inlet, a second air chamber is defined by the second air inlet and the first distribution disc, the second distribution disc is provided with a second flow channel surrounding the first flow channel, and an outlet of the second flow channel is a second flow guide section with the gradually-enlarged cross section area. The two kinds of process gas are conveyed through independent first and second runners respectively, and the cross sectional area of a first flow guide section at an outlet of the first runner is gradually increased from upstream to downstream; the cross section area of a second flow guide section at the outlet of the second flow channel is gradually increased from upstream to downstream, so that the process gases are sprayed out in a conical diffusion shape, and the two process gases are converged in an optimal mixing area, close to the bearing seat, of the reaction chamber to realize full mixing.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor processing, and particularly relates to a semiconductor etching device. Background Art

[0002] In semiconductor manufacturing processes, etching technology is one of the key links in integrated circuit production, and its process accuracy directly affects the performance and yield of devices. During dry etching, the uniform distribution and sufficient mixing of process gases are crucial for etching rate, selectivity, and uniformity.

[0003] Currently, common semiconductor etching devices usually use a gas distribution component to introduce two process gases into the reaction chamber. However, in actual production, the existing gas distribution components have the following technical problems: 1. The two process gases are mixed prematurely, resulting in unnecessary reactions of the two process gases in a high-temperature environment. The deposits generated by the prematurely mixed two process gases will deposit on the lower surface of the gas distribution component, and then contaminate the equipment when falling off; moreover, the prematurely mixed two process gases will cause a decrease in the effective gas concentration; 2. The two process gases are not mixed evenly, thus affecting the etching uniformity of the wafer. Summary of the Invention

[0004] The purpose of the present invention is to provide a semiconductor etching device to solve the above-mentioned technical problems existing in the prior art.

[0005] To achieve the above purpose, the present invention is realized through the following technical solutions:

[0006] A semiconductor etching device, the semiconductor etching device includes a reaction chamber, a carrier, and a gas distribution component. The gas distribution component covers the reaction chamber, the carrier is arranged in the reaction chamber, and the gas distribution component includes:

[0007] A cover plate, on which a first gas inlet is opened;

[0008] A first distribution plate, a first gas chamber is formed by enclosing between the first distribution plate and the cover plate. The first gas chamber is used to accommodate the first process gas introduced through the first gas inlet. The first distribution plate is provided with a plurality of first flow channels communicating with the first gas chamber along the thickness direction;

[0009] A second distribution plate, a second gas chamber is formed by enclosing between the second distribution plate and the first distribution plate; the second distribution plate is provided with a second gas inlet to introduce the second process gas into the second gas chamber; the second distribution plate is provided with second flow channels corresponding to each of the first flow channels one by one. The second flow channels surround the periphery of the corresponding first flow channels, and each of the second flow channels communicates with the second gas chamber;

[0010] Among them, the first flow channel includes a first diversion section at its outlet, and the cross-sectional area of the first diversion section increases from upstream to downstream; the second flow channel includes a second diversion section at its outlet, and the cross-sectional area of the second diversion section increases from upstream to downstream; the first process gas guided by the first diversion section and the second process gas guided by the second diversion section cross-mix in the area near the susceptor in the reaction chamber.

[0011] Through the independent design of the first flow channel and the second flow channel in the gas distribution component of the semiconductor etching equipment of the present application, the two process gases do not interfere with each other during the distribution stage, avoiding the generation of deposits in the gas distribution component due to the premature mixing of the two process gases;

[0012] Moreover, the first diversion section of the first flow channel / the second diversion section of the second flow channel adopts a conical structure with a cross-sectional area increasing from upstream to downstream, so that the gas is ejected in a conical diffusion shape, expanding the coverage range, enabling the two process gases to cross-mix in the area near the susceptor;

[0013] The conically diffused process gases form a natural intersection area at the position near the susceptor in the lower part of the reaction chamber. The intersection and mixing of the two conically diffused process gases can make the two process gases mix more fully at the position near the susceptor;

[0014] In summary, the gas distribution component in the semiconductor etching equipment ensures that the two process gases are fully mixed in the optimal mixing area and avoids the negative impacts brought by premature mixing.

[0015] In some embodiments, the reaction chamber includes a mixing suppression area and a mixing promotion area located above the susceptor, and the mixing suppression area is located upstream of the mixing promotion area; the first process gas guided by the first diversion section and the second process gas guided by the second diversion section cross-mix in the mixing promotion area;

[0016] There is a horizontal interface between the mixing suppression area and the mixing promotion area;

[0017] The mixing suppression area has a first height h1, and the first height h1 is the distance from the interface to the lower end face of the second distribution plate; <^

[0018] The mixing promotion area has a second height h2, and the second height h2 is the distance from the interface to the bearing surface of the susceptor;

[0019] The ratio range of the first height h1 to the second height h2 is 2:1 to 4:1.

[0020] By dividing the reaction chamber in the semiconductor etching equipment into a mixing suppression zone and a mixing promotion zone, with the mixing suppression zone located upstream of the mixing promotion zone, the ratio range of the height h1 of the mixing suppression zone to the height h2 of the mixing promotion zone is 2:1 to 4:1; this zoning design can precisely control the timing and position of gas mixing, alleviating the problem of sediment formation caused by premature mixing of the two process gases in the mixing suppression zone of the reaction chamber and avoiding the problem of uneven etching caused by insufficient mixing of the two process gases in the mixing promotion zone near the susceptor.

[0021] In some embodiments, the included angle between the extension lines of the generatrices of two opposite inner sidewalls of the first diversion section is 30° - 120°;

[0022] The included angle between the extension line of the generatrix of the inner sidewall of the second diversion section and the central axis of the second diversion section is 10° - 75°.

[0023] By the size of the included angle between two opposite wall surfaces of the first diversion section and the size of the included angle between the extension line of the generatrix of the inner sidewall of the second diversion section and the central axis of the second diversion section, the position of the intersection area of the two process gases can be adjusted; by adjusting the above two included angles, the intersection area of the two process gases can be made close to the susceptor carrying the wafer, enabling the two process gases to be fully mixed on the wafer surface.

[0024] In some embodiments, the end face of the outlet end of the first flow channel and the end face of the outlet end of the second flow channel are located in the same plane.

[0025] Through the co-planar design of the outlet ends of the first flow channel / second flow channel, it is possible to prevent sediment formation in the gas distribution component due to premature meeting of the two process gases; if the end face of the outlet end of the first flow channel is lower than the end face of the outlet end of the second flow channel, that is, the first flow channel extends out of the second flow channel, then sediments may be generated on the outer sidewall of the first flow channel; if the end face of the outlet end of the first flow channel is higher than the end face of the outlet end of the second flow channel, then sediments may be generated on the outlet end face of the first flow channel and the inner sidewall of the second flow channel.

[0026] In some embodiments, the first distribution plate is provided with a plurality of first through holes along the thickness direction, and the outlet ends of the first through holes all extend downstream to form air guiding columns, and the column walls of the air guiding columns are formed by extending from the circumferential walls of the corresponding first through holes downstream; a second through hole communicating with the corresponding first through hole is provided inside the air guiding column, and the second through hole and the corresponding first through hole are combined to form a first flow channel;

[0027] The second distribution plate is provided with third through holes corresponding to the air guiding columns one by one along the thickness direction, the outlet ends of the air guiding columns are inserted into the corresponding third through holes, and the annular gap between the outer peripheral wall of the air guiding column and the inner hole wall of the corresponding third through hole forms a second flow channel.

[0028] The coaxial flow channel is formed by the nested design of the air guide column and the third through hole, saving space and simplifying the assembly; the annular gap surrounding the first flow channel serves as the second flow channel, realizing the separated transportation of two process gases; the structure of the air guide column inserted into the third through hole also reduces the gas cross-flow path between the two process gases.

[0029] In some embodiments, the third through hole includes a guiding portion, a flowing portion, and an outlet end arranged in sequence from upstream to downstream. The aperture of the guiding portion is larger than that of the flowing portion to facilitate the corresponding air guide column to be assembled into the third through hole.

[0030] By designing the third through hole as a conical structure with an entrance aperture larger than the middle aperture, the assembly difficulty of the air guide column is significantly reduced; this conical entrance design allows a certain centering deviation when the air guide column is inserted. Through the two-stage assembly process of guiding and positioning, both the final fitting accuracy is ensured and the assembly difficulty is reduced.

[0031] In some embodiments, the first flow channel further includes a buffer section and an acceleration section located upstream of the first diversion section. The buffer section is located upstream of the acceleration section, and the cross-sectional area of the acceleration section is smaller than that of the buffer section;

[0032] The buffer section is used to buffer the first process gas entering the first flow channel and gradually release the buffered first process gas to the acceleration section through the flow resistance formed by the cross-sectional area difference;

[0033] The acceleration section is used to increase the flow rate of the first process gas to shorten the residence time of the first process gas at the outlet end of the first flow channel and make the flow rate of the first process gas flowing out through the first flow channel greater than that of the second process gas flowing out through the second flow channel.

[0034] By arranging the buffer section upstream of the first flow channel, the first process gas can flow out evenly from each first flow channel; the large-volume design of the buffer section can effectively solve the problem of uneven distribution of the first process gas caused by the position of the first air inlet in the traditional design; through the flow resistance effect, the buffer section can buffer the first process gas in the first air chamber, so that the buffer sections of each first flow channel always buffer the first process gas, making the gas flow rate of each flow channel as consistent as possible, and then the first process gas can be transported to the reaction chamber evenly and stably; the design of the buffer section can significantly improve the gas distribution uniformity on the wafer surface;

[0035] By arranging the acceleration section with a reduced cross-sectional area downstream of the buffer section, the flow rate of the first process gas can be increased. The higher flow rate significantly reduces the residence time of the first process gas at the outlet end of the first flow channel and in the mixing suppression area of the reaction chamber, reducing the possibility of sediment formation between the first process gas and the second process gas at the outlet end of the first flow channel and in the mixing suppression area of the reaction chamber.

[0036] In some embodiments, the ratio of the length of the first diversion section to the length of the acceleration section is between 1 / 20 and 1 / 4.

[0037] By limiting the ratio of the length of the first diversion section to the length of the acceleration section between 1 / 20 and 1 / 4, the shorter first diversion section ensures that after the first process gas obtains sufficient kinetic energy in the acceleration section, it can quickly diffuse in the first diversion section without losing too much speed; this structural design perfectly balances the conflicting requirements of gas diffusion and kinetic energy retention.

[0038] In some embodiments, the sum of the lengths of the first diversion section and the acceleration section is equal to the total length of the second flow channel.

[0039] The design that the sum of the lengths of the first diversion section and the acceleration section is equal to the total length of the second flow channel enables the two process gases to have similar flow characteristics, and this matching avoids the problem of uneven mixing caused by differences in flow characteristics.

[0040] In some embodiments, there are multiple second air inlets, and the multiple second air inlets are arranged circumferentially on the side wall of the second distribution plate;

[0041] A number of ventilation holes are provided in the middle of the second distribution plate along the thickness direction.

[0042] By providing multiple second air inlets arranged circumferentially on the side wall of the second distribution plate, the second process gas can be introduced into the second gas chamber from the circumferential side wall of the second distribution plate;

[0043] Since the second process gas is introduced into the second gas chamber from the circumferential side wall of the second distribution plate, the gas distribution at the edge part of the second distribution plate will be more than that at the middle part of the second distribution plate. Therefore, ventilation holes are provided in the middle of the second distribution plate to make the second process gas enter the reaction chamber more evenly.

[0044] In some embodiments, the cover plate and the first distribution plate, and the first distribution plate and the second distribution plate are detachably connected.

[0045] The detachable structure among the cover plate, the first distribution plate, and the second distribution plate allows each part to be thoroughly cleaned, solving the problem of hard-to-clean dead corners; moreover, the modular design enables each part to be independently replaced without replacing the entire gas distribution component.

[0046] In some embodiments, the cover plate has opposite first and second surfaces; the first distribution plate has opposite third and fourth surfaces; the second distribution plate has opposite fifth and sixth surfaces;

[0047] An annular first flange is provided at the edge portion of the third surface of the first distribution plate. The first flange includes a vertically extending portion and a horizontally bearing portion. The vertically extending portion is formed by extending upward from the edge of the third surface, and the horizontally bearing portion is formed by extending outward from the top end of the vertically extending portion in the horizontal direction. The horizontally bearing portion has opposite seventh and eighth surfaces, and the seventh surface of the horizontally bearing portion abuts against the second surface of the cover plate.

[0048] An annular second flange is provided on the fifth surface of the second distribution plate, and the top surface of the second flange abuts against the eighth surface of the horizontally bearing portion.

[0049] Through the design of the first flange, a first air chamber is formed by enclosing between the side wall of the first flange, the second surface of the cover plate, and the third surface of the first distribution plate.

[0050] Through the design of the second flange, a second air chamber is formed by enclosing between the side wall of the second flange, the fourth surface of the first distribution plate, and the fifth surface of the second distribution plate.

[0051] Moreover, the stepped first flange provides an assembly positioning reference, facilitating the docking of the second distribution plate with the first distribution plate.

[0052] In some embodiments, a first sealing ring is provided at the annular mating surface where the horizontally bearing portion is in contact with the cover plate.

[0053] A second sealing ring is provided at the annular contact surface where the second flange is in contact with the horizontally bearing portion.

[0054] By providing a first sealing ring at the annular mating surface where the horizontally bearing portion is in contact with the cover plate, the sealing performance of the first air chamber can be improved.

[0055] By providing a second sealing ring at the annular contact surface where the second flange is in contact with the horizontally bearing portion, the sealing performance of the second air chamber can be improved.

[0056] In some embodiments, the cover plate, the first distribution plate, and the second distribution plate are circular.

[0057] The central axes of the cover plate and the first distribution plate coincide.

[0058] The central axes of the first distribution plate and the second distribution plate coincide.

[0059] The central axes of the cover plate, the first distribution plate, and the second distribution plate coincide. The coaxiality of the three ensures the symmetry of gas distribution, thereby reducing the etching rate difference at different positions of the wafer.

[0060] In some embodiments, the central axis of the second distribution plate coincides with the central axis of the bearing seat.

[0061] The coaxial design of the second distribution plate and the carrier seat can ensure that the gas distribution is axisymmetric, eliminating the uneven etching of the wafer edge caused by eccentricity. Description of the Drawings

[0062] In order to more clearly illustrate the technical solutions of the present invention, the drawings required for description will be briefly introduced below. Obviously, the drawings in the following description are an embodiment of the present invention. For those of ordinary skill in the art, without creative efforts, other drawings can be obtained based on these drawings.

[0063] Figure 1 It is a schematic structural diagram of the semiconductor etching equipment in the embodiment of the present application;

[0064] Figure 2 is Figure 1 a partial enlarged schematic diagram at A in

[0065] Figure 3 It is an assembly schematic diagram of the first distribution plate and the second distribution plate in the embodiment of the present application; the red arrow in the figure is the flow direction of the first process gas flowing out of the first diversion section, and the green arrow in the figure is the flow direction of the second process gas flowing out of the second diversion section;

[0066] Figure 4 It is a schematic diagram of the reaction chamber in the embodiment of the present application being divided into a mixing suppression area and a mixing promotion area;

[0067] Figure 5 It is a partial structural schematic diagram of the first distribution plate in the embodiment of the present application;

[0068] Figure 6 It is a schematic diagram of the included angle α between two opposite wall surfaces of the first diversion section in the embodiment of the present application;

[0069] Figure 7 It is a partial structural schematic diagram of the second distribution plate in the embodiment of the present application, and the extension line of the generatrix of the inner side wall of the second diversion section and the included angle β between the central axis of the second diversion section are also shown in the figure;

[0070] Figure 8 It is a sectional three-dimensional structural schematic diagram of the first distribution plate in the embodiment of the present application;

[0071] Figure 9 It is a sectional three-dimensional structural schematic diagram of the second distribution plate in the embodiment of the present application;

[0072] Figures 1 to 9 It includes:

[0073] Gas distribution assembly 1:

[0074] Cover plate 11, first air inlet 111,

[0075] The first gas chamber 12,

[0076] the first distribution plate 13, the first flow channel 131, the first through hole 132, the air guide column 133, the buffer section 134, the acceleration section 135, the first diversion section 136, the first flange 137, the vertically extending portion 138, and the horizontally bearing portion 139,

[0077] the second gas chamber 14,

[0078] the second distribution plate 15, the second air inlet 151, the third through hole 152, the second flow channel 153, the second diversion section 154, the ventilation hole 155, and the second flange 156;

[0079] the reaction chamber 2: the mixing suppression area 21 and the mixing promotion area 22;

[0080] the carrier seat 3. Specific embodiments

[0081] The solution proposed by the present invention will be further described in detail below in conjunction with the drawings and specific embodiments. According to the following description, the advantages and features of the present invention will be clearer. It should be noted that the drawings are in a very simplified form and all use non-precise scales, only for the purpose of facilitating and clearly assisting in explaining the embodiments of the present invention. In order to make the purpose, features, and advantages of the present invention more obvious and understandable, please refer to the drawings. It should be noted that the structures, scales, sizes, etc. shown in the drawings of this specification are only used to cooperate with the content disclosed in the specification for those familiar with this technology to understand and read, and are not used to limit the limiting conditions for the implementation of the present invention. Therefore, they do not have a technical essence. Any modification of the structure, change of the proportional relationship, or adjustment of the size, without affecting the effects that the present invention can produce and the purposes that can be achieved, should still fall within the scope that the technical content disclosed by the present invention can cover.

[0082] As Figures 1 - 3 shown, a semiconductor etching device includes a reaction chamber 2, a carrier seat 3, and a gas distribution assembly 1. The gas distribution assembly 1 covers the reaction chamber 2, and the carrier seat 3 is disposed in the reaction chamber 2;

[0083] The gas distribution assembly 1 in the semiconductor etching device includes:

[0084] a cover plate 11, and a first air inlet 111 is formed on the cover plate 11;

[0085] a first distribution plate 13. A first gas chamber 12 is formed by enclosing between the first distribution plate 13 and the cover plate 11. The first gas chamber 12 is used to accommodate the first process gas introduced through the first air inlet 111. The first distribution plate 13 is provided with a plurality of first flow channels 131 communicating with the first gas chamber 12 along the thickness direction;

[0086] The second distribution plate 15, a second gas chamber 14 is formed by enclosing between the second distribution plate 15 and the first distribution plate 13; the second distribution plate 15 is provided with a second air inlet 151 to introduce a second process gas into the second gas chamber 14; the second distribution plate 15 is provided with second flow channels 153 corresponding one by one to the first flow channels 131 along the thickness direction, the second flow channels 153 surround the periphery of the corresponding first flow channels 131, and each of the second flow channels 153 communicates with the second gas chamber 14;

[0087] Wherein, the first flow channel 131 includes a first diversion section 136 at its outlet, and the cross-sectional area of the first diversion section 136 increases from the upstream to the downstream; the second flow channel 153 includes a second diversion section 154 at its outlet, and the cross-sectional area of the second diversion section 154 increases from the upstream to the downstream; the first process gas guided by the first diversion section 136 and the second process gas guided by the second diversion section 154 cross and mix in the area near the carrier 3 in the reaction chamber 2.

[0088] Please refer to Figure 3 , Figure 3 illustrates the process of the first process gas guided by the first diversion section 136 and the second process gas guided by the second diversion section 154 cross and mix in the area near the carrier 3 in the reaction chamber 2; Figure 3 The red arrow in the figure is the flow direction of the first process gas flowing out of the first diversion section, and the green arrow in the figure is the flow direction of the second process gas flowing out of the second diversion section;

[0089] When the first process gas flows through the first diversion section 136 at the outlet of the first flow channel 131, it diffuses in a conical shape due to the increasing cross-sectional area; when the second process gas flows through the second diversion section 154 at the outlet of the second flow channel 153, it also diffuses in a conical shape due to the increasing cross-sectional area.

[0090] From Figure 3 it can be seen that there are multiple intersection points between the first process gas and the second process gas, which are specifically described as follows:

[0091] One, Figure 3 The first process gas flowing out of the middle first flow channel 131 intersects with the second process gas flowing out of the second flow channel 153 surrounding it at S1 and S2. Since Figure 3 it is a plan view, in fact, the two are annular intersection and mixing, and S1 and S2 are just two of the points;

[0092] Two, Figure 3 The first process gas flowing out of the middle first flow channel 131 intersects with Figure 3 the second process gas flowing out of the second flow channel 153 on the left at S3, Figure 3 The first process gas flowing out of the middle first flow channel 131 intersects with Figure 3The second process gas flowing out of the second flow channel 153 on the right converges at S5; of course, since Figure 3 is a plan view, S3 and S5 are just two of the points in the convergence area;

[0093] III. Figure 3 The first process gas flowing out of the middle second flow channel 153 converges with Figure 3 the second process gas flowing out of the first flow channel 131 on the left at S4, Figure 3 the first process gas flowing out of the middle second flow channel 153 converges with Figure 3 the second process gas flowing out of the first flow channel 131 on the right at S6; of course, since Figure 3 is a plan view, S4 and S6 are just two of the points in the convergence area.

[0094] It should be noted that Figure 3 the shown is a plan view. Actually, a plurality of first flow channels 131 are provided on the first distribution plate 13, and the plurality of first flow channels 131 form a first flow channel array; similarly, a plurality of second flow channels 153 corresponding to each of the first flow channels 131 are provided on the second distribution plate 15, and the plurality of second flow channels 153 form a second flow channel array; therefore, the first process gas diffusing in a conical shape crosses and mixes with a plurality of second process gases diffusing in a conical shape around it in the area near the carrier 3 in the reaction chamber; it can be understood that the first process gas diffusing in a conical shape crosses and mixes with the second process gases diffusing in a conical shape in each adjacent direction in the area near the carrier 3 in the reaction chamber; of course, the second process gas diffusing in a conical shape also crosses and mixes with a plurality of first process gases diffusing in a conical shape around it in the area near the carrier 3 in the reaction chamber.

[0095] That is to say, the first process gas diffusing in a conical shape from the first flow channel 131 will cross and mix with the second process gases diffusing in a conical shape from a plurality of second flow channels 153 distributed around it in a three-dimensional space in the area near the carrier 3 in the reaction chamber; similarly, the second process gas diffusing in a conical shape from the second flow channel 153 will also cross and mix with the first process gases diffusing in a conical shape from a plurality of adjacent first flow channels 131 in a three-dimensional space in the area near the carrier 3 in the reaction chamber.

[0096] The working process of this semiconductor etching equipment includes:

[0097] The first process gas enters the first gas chamber 12 through the first gas inlet 111 of the cover plate 11, and the second process gas enters the second gas chamber 14 through the second gas inlet 151 of the second distribution plate 15; the two gases are independently stored in their respective gas chambers without mixing with each other;

[0098] The first process gas flows downward from the first gas chamber 12 through the first flow channel 131 of the first distribution plate 13, and the second process gas flows downward from the second gas chamber 14 through the second flow channel 153 of the second distribution plate 15; the second flow channels 153 surround the first flow channels 131 one by one, are independent of each other, and the two process gases are kept isolated in their respective flow channels;

[0099] When the first process gas flows through the first diversion section 136 at the outlet of the first flow channel 131, it diffuses in a conical shape due to the increasing cross-sectional area; when the second process gas flows through the second diversion section 154 at the outlet of the second flow channel 153, it also diffuses in a conical shape due to the increasing cross-sectional area;

[0100] The two process gases that diffuse in a conical shape cross and mix in the area near the carrier 3 in the reaction chamber 2 to ensure the mixing uniformity of the two process gases near the wafer surface;

[0101] The two process gases with uniform mixing undergo an etching reaction on the wafer surface on the carrier 3.

[0102] In this application, the gas distribution component 1 is designed as a multi-layer structure (cover plate 11, first distribution plate 13, second distribution plate 15), and independent first gas chamber 12 and second gas chamber 14 as well as independent first flow channels 131 and second flow channels 153 are designed. The first gas chamber 12 introduces the first process gas through the first air inlet 111, and the second gas chamber 14 introduces the second process gas through the second air inlet 151. The two process gases flow independently in their respective flow channels without interference; this makes the first process gas and the second process gas completely isolated before entering the reaction chamber 2, avoiding the sediment problem caused by the premature mixing of the two process gases in the traditional design; if sediments are generated in the gas distribution component 1, the cleaning gas will blow the sediments onto the carrier 3 after the process is completed, which will cause secondary pollution to the carrier 3 and affect the quality of the next-stage process;

[0103] Both the first flow channel 131 and the second flow channel 153 adopt the diversion section design, and the cross-sectional area of the diversion section increases from the upstream to the downstream, so that the process gas diffuses in a conical shape at the outlet and cross-mixes in the area near the carrier 3 in the reaction chamber 2; this design can effectively solve the problem of uneven etching caused by uneven mixing of the process gas on the wafer surface in the traditional design, making the mixing of the two process gases on the wafer surface more uniform, thereby improving the stability and consistency of the etching process.

[0104] Optionally, as Figure 4 shown, the reaction chamber 2 includes a mixing suppression area 21 and a mixing promotion area 22 located above the carrier 3, and the mixing suppression area 21 is located upstream of the mixing promotion area 22; the first process gas guided by the first diversion section 136 and the second process gas guided by the second diversion section 154 cross and mix in the mixing promotion area 22;

[0105] There is a horizontal interface between the mixing suppression zone 21 and the mixing promotion zone 22 (such as Figure 4 the dashed line shown);

[0106] The mixing suppression zone 21 has a first height h1, and the first height h1 is the distance from the interface to the lower end face of the second distribution plate 15;

[0107] The mixing promotion zone 22 has a second height h2, and the second height h2 is the distance from the interface to the bearing surface of the bearing seat 3;

[0108] The ratio range of the first height h1 to the second height h2 is 2:1 to 4:1.

[0109] By dividing the reaction chamber 2 in the semiconductor etching equipment into a mixing suppression zone 21 and a mixing promotion zone 22, the mixing suppression zone 21 is located upstream of the mixing promotion zone 22, and the ratio range of the height h1 of the mixing suppression zone 21 to the height h2 of the mixing promotion zone 22 is 2:1 to 4:1; this zoning design can precisely control the timing and position of gas mixing, which not only alleviates the problem of sediment formation caused by premature mixing of the two process gases in the mixing suppression zone 21 of the reaction chamber 2, but also avoids the problem of uneven etching caused by insufficient mixing of the two process gases in the mixing promotion zone 22 near the bearing seat 3.

[0110] Optionally, as Figures 5 - 6 shown, the included angle α between the two opposite wall surfaces of the first diversion section 136 is 30° - 120°; from Figure 6 it can be seen that the included angle α is the included angle between the extended lines of the generatrices of the two opposite inner side walls of the first diversion section 136.

[0111] Optionally, as Figure 7 shown, the included angle β between the extended line of the generatrix of the inner side wall of the second diversion section 154 and the central axis of the second diversion section is 10° - 75°;

[0112] Or, it can be expressed as:

[0113] The included angle between the two opposite wall surfaces of the second diversion section 154 is 20° - 150°, that is, the included angle between the extended lines of the generatrices of the two opposite inner side walls of the second diversion section 154 is 20° - 150°.

[0114] The position of the intersection area of the two process gases can be adjusted by the magnitudes of the included angle α and the included angle β; by adjusting the included angle α and the included angle β, the intersection area of the two process gases can be made close to the bearing seat 3 carrying the wafer, so that the two process gases can be fully mixed on the wafer surface.

[0115] Optionally, the semiconductor etching equipment further includes a driving component (not shown), and the driving end of the driving component is connected to the carrier 3; the driving component is configured to drive the carrier 3 to move up and down to adjust the distance H between the bearing surface of the carrier 3 and the lower end surface of the second distribution plate 15; the included angle between two opposite wall surfaces of the first diversion section 136 / the included angle between two opposite wall surfaces of the second diversion section 154 is inversely proportional to the distance H; by adjusting the height of the carrier 3 and the included angle of the diversion section, the position of the mixing promotion area 22 can be flexibly adjusted to meet the requirements of different etching processes.

[0116] Optionally, the semiconductor etching equipment further includes a heating component (not shown), and the heating component is used to heat the two process gases in the reaction chamber 2; the position of the heating component can be adjusted by those skilled in the art according to the process requirements.

[0117] Optionally, please continue to refer to Figure 2 , the end surface of the outlet end of the first flow channel 131 and the end surface of the outlet end of the second flow channel 153 are located on the same plane.

[0118] Through the coplanar design of the outlet ends of the first flow channel 131 / the second flow channel 153, it is possible to prevent the two process gases from meeting prematurely and forming deposits in the gas distribution component 1; if the end surface of the outlet end of the first flow channel 131 is lower than the end surface of the outlet end of the second flow channel 153, that is, the first flow channel 131 extends out of the second flow channel 153, then deposits may be generated on the outer side wall of the first flow channel 131; if the end surface of the outlet end of the first flow channel 131 is higher than the end surface of the outlet end of the second flow channel 153, then deposits may be generated on the outlet end surface of the first flow channel 131 and the inner side wall of the second flow channel 153.

[0119] Optionally, please refer to Figures 1 - 2 and Figures 8 - 9 , the first distribution plate 13 is provided with a plurality of first through holes 132 in the thickness direction, and the outlet ends of the first through holes 132 all extend downstream to form air guiding columns 133, and the column walls of the air guiding columns 133 are formed by extending the circumferential walls of the corresponding first through holes 132 downstream; the air guiding column 133 has a second through hole communicated with the corresponding first through hole 132 inside, and the second through hole and the corresponding first through hole 132 are combined to form the first flow channel 131;

[0120] The second distribution plate 15 is provided with third through holes 152 corresponding to the air guiding columns 133 one by one in the thickness direction, the outlet ends of the air guiding columns 133 are inserted into the corresponding third through holes 152, and the annular gap between the outer peripheral wall of the air guiding column 133 and the inner hole wall of the corresponding third through hole 152 forms the second flow channel 153.

[0121] In this solution, the included angle β is the included angle between the extended lines of the generatrices of two opposite inner side walls of the outlet end of the third through hole 152.

[0122] By extending and arranging a plurality of gas guiding columns 133 corresponding to the first through holes 132 one by one on the first distribution plate 13, and inserting the gas guiding columns 133 into the third through holes 152 of the second distribution plate 15, a coaxial nested design of the first flow channel 131 and the second flow channel 153 (annular gap) is achieved; compared with the traditional flow channel design, this structure significantly saves space and makes the gas distribution assembly 1 more compact; under the trend of miniaturization of semiconductor devices, this design can reduce the equipment volume without reducing performance and improve the utilization rate of the fab space;

[0123] The cooperation between the gas guiding columns 133 and the third through holes 152 forms a physical isolation. The annular gap surrounding the first flow channel 131 serves as the second flow channel 153, realizing the separated transportation of two process gases and ensuring the complete separation of the two process gases during the transportation in the gas distribution assembly 1; in the traditional design, the gases between adjacent flow channels may cross-talk through the assembly gap, and this application completely solves this problem through the physical isolation of the nested structure.

[0124] Optionally, the included angle between the extension line of the generatrix of the inner side wall of the second diversion section 154 and the extension line of the generatrix of the outer peripheral wall of the gas guiding column is 10°-75°.

[0125] Optionally, please continue to refer to Figure 2 The third through hole 152 includes a guiding portion, a flowing portion, and an outlet end arranged in sequence from upstream to downstream. The aperture of the guiding portion is larger than that of the flowing portion to facilitate the assembly of the corresponding gas guiding column 133 into the third through hole 152.

[0126] By designing the third through hole 152 as a conical structure with an entrance aperture larger than the middle aperture, the assembly difficulty of the gas guiding column 133 is significantly reduced; this conical entrance design allows a certain centering deviation when the gas guiding column 133 is inserted. Through the two-stage assembly process of guiding and positioning, both the final fitting accuracy is ensured and the assembly difficulty is reduced;

[0127] This design makes the disassembly of the gas distribution assembly 1 more convenient. During equipment maintenance, technicians can easily separate the first and second distribution plates 15 for cleaning or replacement. The conical structure at the entrance of the third through hole 152 alleviates the problem of wear on the mating surface caused by repeated disassembly and assembly in the traditional design.

[0128] Optionally, please continue to refer to Figure 2 The first flow channel 131 further includes a buffer section 134 and an acceleration section 135 located upstream of the first diversion section 136. The buffer section 134 is located upstream of the acceleration section 135, and the cross-sectional area of the acceleration section 135 is smaller than that of the buffer section 134;

[0129] The buffer section 134 is used to buffer the first process gas entering the first flow channel 131, and gradually release the buffered first process gas to the acceleration section 135 through the flow resistance formed by the cross-sectional area difference.

[0130] The acceleration section 135 is used to increase the flow rate of the first process gas, so as to shorten the residence time of the first process gas at the outlet end of the first flow channel 131, and make the flow rate of the first process gas flowing out of the first flow channel 131 greater than the flow rate of the second process gas flowing out of the second flow channel 153.

[0131] By arranging the buffer section 134 upstream of the first flow channel 131, the first process gas can flow out evenly from each first flow channel 131; the large-volume design of the buffer section 134 can effectively solve the problem of uneven distribution of the first process gas caused by the position of the first air inlet 111 in the traditional design; through the flow resistance effect, the buffer section 134 can be used as a storage cavity to buffer the first process gas in the first air chamber 12, so that the buffer sections 134 of each first flow channel 131 always buffer the first process gas, making the gas flow rate of each flow channel as consistent as possible, and then the first process gas can be evenly and stably transported to the reaction chamber 2; the design of the buffer section 134 can significantly improve the gas distribution uniformity on the wafer surface;

[0132] By arranging the acceleration section 135 with a reduced cross-sectional area downstream of the buffer section 134, the flow rate of the first process gas can be increased. The higher flow rate significantly reduces the residence time of the first process gas at the outlet end of the first flow channel 131 and in the mixing suppression area 21 of the reaction chamber 2, and reduces the possibility of sediment formation of the first process gas and the second process gas at the outlet end of the first flow channel 131 and in the mixing suppression area 21 of the reaction chamber 2.

[0133] Optionally, please continue to refer to Figure 2 that the ratio of the length of the first diversion section 136 to the length of the acceleration section 135 is between 1 / 20 and 1 / 4.

[0134] By limiting the ratio of the length of the first diversion section 136 to the length of the acceleration section 135 between 1 / 20 and 1 / 4, the shorter first diversion section 136 ensures that after the first process gas obtains sufficient kinetic energy through the acceleration section 135, it can quickly diffuse in the first diversion section 136 without losing too much speed; this structural design perfectly balances the contradictory requirements of gas diffusion and kinetic energy retention.

[0135] Optionally, please continue to refer to Figure 2 that the sum of the lengths of the first diversion section 136 and the acceleration section 135 is equal to the total length of the second flow channel 153.

[0136] By designing that the sum of the lengths of the first guide section 136 and the acceleration section 135 is equal to the total length of the second flow channel 153, the two process gases have similar flow characteristics. This matching avoids the problem of uneven mixing caused by differences in flow characteristics.

[0137] Optionally, the first process gas includes at least one first reaction gas and at least one first carrier gas, and the first gas chamber 12 is configured to contain and mix the first process gas;

[0138] The second process gas includes at least one second reaction gas and at least one second carrier gas, and the second gas chamber 14 is configured to contain and mix the second process gas; wherein the first reaction gas and the second reaction gas are different.

[0139] The independent design of the first gas chamber 12 and the second gas chamber 14 prevents the two process gases from interfering with each other during the distribution phase, thus avoiding premature mixing of the two process gases and the generation of deposits in the gas distribution assembly 1.

[0140] Moreover, since both the first process gas and the second process gas contain multiple gases, the first gas chamber 12 can accommodate and mix the first process gas so that the first reaction gas and the first carrier gas in the first process gas are evenly mixed; the second gas chamber 14 can accommodate and mix the second process gas so that the second reaction gas and the second carrier gas in the second process gas are evenly mixed.

[0141] Optionally, the first carrier gas and the second carrier gas are the same or different.

[0142] Optionally, the first reaction gas is a fluorine-containing reaction gas (including but not limited to hydrogen fluoride), and the second reaction gas is a hydrogen-containing reaction gas (including but not limited to ammonia); the first carrier gas and the second carrier gas are either hydrogen or argon, an inert gas.

[0143] Optionally, the shape of the first air chamber 12 and the second air chamber 14 is any one of a cylinder, a cube, and an ellipsoid; the ellipsoid is an oblate sphere that is stretched in the horizontal direction and gradually decreases in vertical height from the center to both ends, so that the first process gas / the second process gas can be fully diffused after entering the first air chamber 12 / the second air chamber 14 respectively.

[0144] Optional, please continue to Figure 1 and Figure 9 A plurality of second air inlets 151 are provided, and the plurality of second air inlets 151 are circumferentially arranged on the side wall of the second distribution plate 15;

[0145] A plurality of vent holes 155 are formed in the middle region of the second distribution plate 15 along the thickness direction.

[0146] Optionally, the radial distance from the edge of the central region of the second distribution plate 15 to the center of the plate is L1, and the radial distance from the edge of the second distribution plate 15 to the center of the plate is L2. The ratio range of L2 / L1 is between 4:1 and 1:1.

[0147] By providing a plurality of circumferentially arranged second air inlets 151 on the side wall of the second distribution plate 15, the second process gas can be introduced into the second gas chamber 14 from the circumferential side wall of the second distribution plate 15.

[0148] Since the second process gas is introduced into the second gas chamber 14 from the circumferential side wall of the second distribution plate 15, the gas distribution at the edge portion of the second distribution plate 15 will be more than that at the central portion of the second distribution plate 15, that is, the gas flux in the edge region of the second gas chamber 14 is higher than that in the central region. Therefore, an air vent hole 155 is provided in the middle of the second distribution plate 15 to enable the second process gas to enter the reaction chamber 2 more uniformly.

[0149] Optionally, the cover plate 11 and the first distribution plate 13, and the first distribution plate 13 and the second distribution plate 15 are detachably connected.

[0150] The following gives examples of detachable connections. For example, the cover plate 11 and the first distribution plate 13, and the first distribution plate 13 and the second distribution plate 15 can be respectively connected by bolts; or the cover plate 11, the first distribution plate 13, and the second distribution plate 15 can be connected by bolts passing through the edges of the cover plate 11, the first distribution plate 13, and the second distribution plate 15 in sequence. Specifically, how to make the detachable connection can be selected by those skilled in the art.

[0151] The detachable structure among the cover plate 11, the first distribution plate 13, and the second distribution plate 15 allows each part to be thoroughly cleaned, solving the problem of hard-to-clean dead corners; moreover, the modular design enables each part to be independently replaced without replacing the entire gas distribution assembly 1.

[0152] Optionally, please continue to refer to Figure 1 and Figures 8 - 9 , the cover plate 11 has opposite first and second surfaces; the first distribution plate 13 has opposite third and fourth surfaces; the second distribution plate 15 has opposite fifth and sixth surfaces;

[0153] From Figure 1Viewed from the orientation, from upstream to downstream, the arrangement order of the above surfaces is: the first surface, the second surface, the third surface, the fourth surface, the fifth surface, and the sixth surface; wherein, the first surface and the second surface are respectively the upper and lower surfaces of the cover plate 11 facing away from each other; the third surface and the fourth surface are respectively the upper and lower surfaces of the first distribution plate 13 facing away from each other; a first air chamber 12 is formed between the third surface and the second surface; the fifth surface and the sixth surface are respectively the upper and lower surfaces of the second distribution plate 15 facing away from each other; a second air chamber 14 is formed between the fourth surface and the fifth surface;

[0154] An annular first flange 137 is provided at the edge portion of the third surface of the first distribution plate 13. The first flange 137 includes a vertically extending portion 138 and a horizontally bearing portion 139. The vertically extending portion 138 is formed by extending upward from the edge of the third surface, and the horizontally bearing portion 139 is formed by extending outward in the horizontal direction from the top end of the vertically extending portion 138. The horizontally bearing portion 139 has opposite seventh and eighth surfaces, and the seventh surface of the horizontally bearing portion 139 abuts against the second surface of the cover plate 11;

[0155] From Figure 8 the orientation, the seventh surface and the eighth surface are respectively the upper and lower surfaces of the horizontally bearing portion 139;

[0156] Please refer to Figure 9 , a ring-shaped second flange 156 is provided on the fifth surface of the second distribution plate 15. The top surface of the second flange 156 abuts against the eighth surface of the horizontally bearing portion 139, that is, the upper surface of the second flange 156 supports the lower surface of the horizontally bearing portion 139 in the first flange 137.

[0157] Through the design of the first flange 137, a first air chamber 12 is formed by enclosing between the side wall of the first flange 137, the second surface of the cover plate 11, and the third surface of the first distribution plate 13;

[0158] Through the design of the second flange 156, a second air chamber 14 is formed by enclosing between the side wall of the second flange 156, the fourth surface of the first distribution plate 13, and the fifth surface of the second distribution plate 15;

[0159] Moreover, the stepped first flange 137 provides an assembly positioning reference, facilitating the docking of the second distribution plate 15 with the first distribution plate 13.

[0160] Optionally, a first sealing ring is provided at the annular mating surface where the horizontally bearing portion 139 is in contact with the cover plate 11;

[0161] A second sealing ring is provided at the annular contact surface where the second flange 156 is in contact with the horizontally bearing portion 139.

[0162] By providing a first sealing ring at the annular mating surface where the horizontal bearing portion 139 is in contact with the cover plate 11, the sealing performance of the first air chamber 12 can be improved;

[0163] By providing a second sealing ring at the annular contact surface where the second flange 156 is in contact with the horizontal bearing portion 139, the sealing performance of the second air chamber 14 can be improved.

[0164] Optionally, the cover plate 11, the first distribution plate 13, and the second distribution plate 15 are circular;

[0165] The central axes of the cover plate 11 and the first distribution plate 13 coincide;

[0166] The central axes of the first distribution plate 13 and the second distribution plate 15 coincide.

[0167] The central axes of the cover plate 11, the first distribution plate 13, and the second distribution plate 15 coincide. The coaxial arrangement of the three ensures the symmetry of gas distribution, thereby reducing the etching rate difference at different positions of the wafer.

[0168] Optionally, the central axis of the second distribution plate 15 coincides with the central axis of the carrier 3.

[0169] The coaxial design of the second distribution plate 15 and the carrier 3 can ensure that the gas distribution is axisymmetric, eliminating the uneven etching at the wafer edge caused by eccentricity.

[0170] Optionally, the cover plate 11, the first gas equalizing plate, and the second gas equalizing plate are made of the same material or different materials.

[0171] Optionally, the material of the cover plate 11 is any one of aluminum, anodized aluminum, stainless steel, and nickel-plated stainless steel; the material of the first distribution plate 13 is any one of aluminum, anodized aluminum, stainless steel, and nickel-plated stainless steel; the material of the second distribution plate 15 is any one of aluminum, anodized aluminum, stainless steel, and nickel-plated stainless steel;

[0172] The materials of the cover plate 11, the first gas equalizing plate, and the second gas equalizing plate can be determined by those skilled in the art according to process conditions. The above are only examples of several materials that can effectively prevent gas corrosion and / or compound deposition, and do not mean that the materials of the cover plate 11, the first gas equalizing plate, and the second gas equalizing plate are limited to these several.

[0173] It should be noted that in this text, relational terms such as "first" and "second" are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the terms "comprising", "including" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device comprising a series of elements not only includes those elements, but also includes other elements not expressly listed, or further includes elements inherent to such process, method, article or device. Without further limitation, an element defined by the statement "comprising an..." does not exclude the existence of additional identical elements in the process, method, article or device comprising said element. Additionally, the term "connected" in this text means that A and B are directly connected, or that A and B are indirectly connected. Indirect connection means that A and B are connected through C, or even through more components such as C and D. The connection between A and B can be integral or separable, detachable or fixed. The term "optional" in this text means that this technical feature can be combined or not combined with any feature in the text.

[0174] Although the content of the present invention has been described in detail through the above preferred embodiments, it should be recognized that the above description should not be considered as a limitation of the present invention. After those skilled in the art have read the above content, various modifications and alternatives to the present invention will be obvious. Therefore, the protection scope of the present invention should be defined by the appended claims.

Claims

1. A semiconductor etching device, the semiconductor etching device comprising a reaction chamber, a carrier, and a gas distribution assembly, the gas distribution assembly covering the reaction chamber, the carrier being disposed in the reaction chamber, characterized in that, The gas distribution assembly includes: a cover plate, on which a first air inlet is formed; a first distribution plate, which forms a first gas chamber together with the cover plate. The first gas chamber is used to accommodate a first process gas introduced through the first air inlet. The first distribution plate is provided with a plurality of first flow channels in the thickness direction, and each of the first flow channels communicates with the first gas chamber; a second distribution plate, which forms a second gas chamber together with the first distribution plate. The second distribution plate is provided with a second air inlet to introduce a second process gas into the second gas chamber. The second distribution plate is provided with second flow channels corresponding to the first flow channels one by one in the thickness direction. The second flow channels surround the corresponding first flow channels on the periphery, and each of the second flow channels communicates with the second gas chamber; Wherein, the first flow channel includes a first diversion section at its outlet, and the cross-sectional area of the first diversion section increases from the upstream to the downstream; the second flow channel includes a second diversion section at its outlet, and the cross-sectional area of the second diversion section increases from the upstream to the downstream; the first process gas guided by the first diversion section and the second process gas guided by the second diversion section cross-mix in the area near the carrier in the reaction chamber.

2. The semiconductor etching equipment according to claim 1, wherein the reaction chamber includes a mixing suppression area and a mixing promotion area above the carrier, and the mixing suppression area is located upstream of the mixing promotion area; the first process gas guided by the first diversion section and the second process gas guided by the second diversion section cross-mix in the mixing promotion area.

3. The semiconductor etching equipment according to claim 2, wherein there is a horizontal interface between the mixing suppression area and the mixing promotion area; the mixing suppression area has a first height h1, and the first height h1 is the distance from the interface to the lower end face of the second distribution plate; the mixing promotion area has a second height h2, and the second height h2 is the distance from the interface to the bearing surface of the carrier; the ratio range of the first height h1 to the second height h2 is 2:1 to 4:

1.

4. The semiconductor etching equipment according to any one of claims 1-3, wherein the included angle between the extended lines of the generatrices of two opposite inner side walls of the first diversion section is 30°-120°; the included angle between the extended line of the generatrix of the inner side wall of the second diversion section and the central axis of the second diversion section is 10°-75°.

5. The semiconductor etching equipment according to claim 1, wherein The end face of the outlet end of the first flow channel and the end face of the outlet end of the second flow channel are located on the same plane.

6. The semiconductor etching equipment according to claim 1, wherein the first distribution plate is provided with a plurality of first through holes in the thickness direction, and the outlet ends of the first through holes all extend downstream to form air guiding columns. The column walls of the air guiding columns are formed by extending from the circumferential walls of the corresponding first through holes downstream; a second through hole communicating with the corresponding first through hole is provided inside the air guiding column, and the second through hole and the corresponding first through hole form a first flow channel together; The second distribution plate is provided with third through holes corresponding to each of the air guide columns along the thickness direction, the air outlet end of the air guide column is inserted into the corresponding third through hole, and the annular gap between the outer peripheral wall of the air guide column and the inner wall of the corresponding third through hole forms a second flow channel.

7. The semiconductor etching equipment according to claim 6, wherein, The third through hole includes a guide portion, a flow portion and an outlet end arranged in sequence from upstream to downstream. The aperture of the guide portion is larger than the aperture of the flow portion to facilitate the corresponding air guide column to be assembled into the third through hole.

8. The semiconductor etching equipment according to claim 1, wherein: The first flow channel further includes a buffer section and an acceleration section located upstream of the first flow guide section, the buffer section is located upstream of the acceleration section, and the cross-sectional area of the acceleration section is smaller than the cross-sectional area of the buffer section; The buffer section is used to buffer the first process gas entering the first flow channel, and gradually release the buffered first process gas to the acceleration section through the flow resistance formed by the cross-sectional area difference; The acceleration section is used to increase the flow rate of the first process gas to shorten the residence time of the first process gas at the outlet end of the first flow channel, and make the flow rate of the first process gas flowing out through the first flow channel greater than the flow rate of the second process gas flowing out through the second flow channel.

9. The semiconductor etching equipment according to claim 8, wherein, The ratio of the length of the first guide section to the length of the acceleration section is between 1 / 20 and 1 / 4.

10. The semiconductor etching equipment according to claim 8, wherein The sum of the lengths of the first guide section and the acceleration section is equal to the total length of the second flow channel.

11. The semiconductor etching equipment according to claim 1, wherein There are a plurality of second air inlets, and the plurality of second air inlets are arranged circumferentially on the side wall of the second distribution plate; A plurality of ventilation holes are provided in the middle of the second distribution plate along the thickness direction.

12. The semiconductor etching equipment according to claim 1, wherein: The cover plate has a first surface and a second surface opposite to each other; the first distribution plate has a third surface and a fourth surface opposite to each other; the second distribution plate has a fifth surface and a sixth surface opposite to each other; An annular first flange is provided at an edge portion of the third surface of the first distribution plate. The first flange includes a vertical extension portion and a horizontal bearing portion. The vertical extension portion is formed by extending upward from the edge of the third surface. The horizontal bearing portion is formed by extending horizontally outward from the top end of the vertical extension portion. The horizontal bearing portion has a seventh surface and an eighth surface opposite to each other. The seventh surface of the horizontal bearing portion receives the second surface of the cover plate. A second annular flange is provided on the fifth surface of the second distribution plate, and a top surface of the second flange supports the eighth surface of the horizontal bearing portion.

13. The semiconductor etching equipment according to claim 12, wherein: A first sealing ring is provided at the annular mating surface where the horizontal bearing portion and the cover plate meet; A second sealing ring is provided at the annular contact surface where the second flange meets the horizontal bearing portion.

14. The semiconductor etching equipment according to claim 1, wherein: The cover plate, the first distribution plate and the second distribution plate are circular; The central axes of the cover plate and the first distribution plate coincide with each other; The central axes of the first distribution plate and the second distribution plate coincide with each other; The central axis of the second distribution plate coincides with the central axis of the bearing seat.

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