Display panel, preparation method thereof and display device

Abstract

The invention discloses a display panel, a preparation method thereof and a display device. The display panel comprises an array substrate; the light-emitting layer is arranged on the array substrate, the light-emitting layer comprises a plurality of light-emitting elements arranged in an array mode, each light-emitting element comprises an epitaxial layer and a color conversion layer, and the epitaxial layer comprises a first semiconductor layer, a quantum well light-emitting layer and a second semiconductor layer which are arranged in a stacked mode; the first electrode is arranged on one side close to the first semiconductor layer; the second electrode is arranged on one side close to the second semiconductor layer; wherein the color conversion layer comprises a first color conversion layer arranged on one side, close to the first semiconductor layer, of the epitaxial layer, the first color conversion layer is provided with at least one first opening for exposing the first semiconductor layer, and the first electrode is in contact with the first semiconductor layer through the first opening; and / or the color conversion layer comprises a second color conversion layer arranged on the side, close to the second semiconductor layer, of the epitaxial layer, at least one second opening for exposing the second semiconductor layer is formed in the second color conversion layer, and the second electrode is in contact with the second semiconductor layer through the second opening.

Description

Technical Field

[0001] The present application generally relates to the field of display technologies, and more particularly to a display panel, a method for manufacturing the same, and a display device. Background Art

[0002] In recent years, quantum dot displays using quantum dots as pixel materials or color conversion layer materials have rapidly emerged. Nano-semiconductor quantum dots have become a new focus in the field of information display due to their low power consumption, ultra-thinness, narrow-band light emission, high color saturation and light emission brightness, and solution processability. Currently, micro-LED display panels using photo-induced quantum dots as color conversion layers (e.g., Micro LED) have become one of the two most cutting-edge applications of quantum dot materials as self-luminous panels, which also makes the application of color conversion film layers for micro-LEDs an important development direction and research focus in display technologies.

[0003] Although in the prior art, a Micro LED display device that can emit red, green, and blue light can be obtained by adding a color conversion film layer on a display panel, it requires a cell process, which is complex, has poor blue light utilization, and requires CF technology. In addition, there are also problems in display effects such as uneven light emission and low light utilization rate. Summary of the Invention

[0004] In view of the above-mentioned defects or deficiencies in the prior art, it is desirable to provide a display panel, a method for manufacturing the same, and a display device that can improve the light emission effect and light efficiency utilization rate of the display panel.

[0005] In a first aspect, the present application provides a display panel, comprising:

[0006] An array substrate;

[0007] A light-emitting layer disposed on the array substrate, the light-emitting layer comprising a plurality of light-emitting elements arranged in an array, each light-emitting element comprising an epitaxial layer and a color conversion layer, the epitaxial layer comprising a first semiconductor layer, a quantum well light-emitting layer, and a second semiconductor layer stacked;

[0008] A first electrode disposed on a side of the first semiconductor layer and a second electrode disposed on a side of the second semiconductor layer;

[0009] Wherein, the color conversion layer comprises a first color conversion layer disposed on a side of the epitaxial layer close to the first semiconductor layer, at least one first opening exposing the first semiconductor layer is provided on the first color conversion layer, and the first electrode is in contact with the first semiconductor layer through the first opening; and / or

[0010] The color conversion layer includes a second color conversion layer disposed on a side of the epitaxial layer close to the second semiconductor layer. At least one second opening exposing the second semiconductor layer is provided on the second color conversion layer, and the second electrode contacts the second semiconductor layer through the second opening.

[0011] Optionally, the first semiconductor layer is disposed on a side of the quantum well light-emitting layer away from the array substrate. A plurality of first grooves are spaced apart on the first semiconductor layer, and the first grooves do not penetrate the first semiconductor layer.

[0012] The first color conversion layer includes filling the first grooves and forming the first opening between two adjacent first grooves. A side surface of the first color conversion layer away from the second semiconductor layer is flush with a side surface of the first semiconductor layer away from the second semiconductor layer.

[0013] Optionally, the first electrode is disposed on a side surface of the first semiconductor layer and the first color conversion layer away from the second semiconductor layer.

[0014] A gap is provided between the epitaxial layers of adjacent light-emitting elements, and the first electrode is electrically connected to the array substrate through the gap.

[0015] Optionally, the second semiconductor is disposed on a side of the quantum well light-emitting layer close to the array substrate.

[0016] The second color conversion layer is disposed on a side surface of the first semiconductor layer away from the second semiconductor layer, and at least one of the second openings is provided on the second color conversion layer.

[0017] Optionally, the second electrode is disposed on a side surface of the second color conversion layer away from the second semiconductor layer.

[0018] A bonding metal layer bonded to the second electrode is provided on the array substrate.

[0019] Optionally, a reflective layer is further provided on a side surface of the light-emitting layer away from the array substrate, and the first electrode is disposed on a side surface of the reflective layer away from the array substrate.

[0020] A first via exposing the first semiconductor layer is provided on the reflective layer, and the first electrode contacts the first semiconductor layer through the first via.

[0021] Optionally, the first electrode includes a first sub-electrode disposed on a side surface of the reflective layer close to the array substrate and a second sub-electrode disposed on a side surface of the reflective layer away from the array substrate, and the first sub-electrode contacts the first semiconductor layer.

[0022] A second via exposing the first sub - electrode is provided on the reflection layer, and the second sub - electrode contacts the first sub - electrode through the second via.

[0023] Optionally, the first sub - electrode is disposed on a surface of the first semiconductor away from the second semiconductor, and a plurality of second grooves are spaced on the first sub - electrode, and the second grooves extend to the first semiconductor layer and do not penetrate the first semiconductor.

[0024] The first color conversion layer includes filling the second grooves and forming the first openings between two adjacent second grooves, and a surface of the first color conversion layer away from the second semiconductor layer is flush with a surface of the first sub - electrode away from the second semiconductor layer.

[0025] Optionally, the display panel includes a plurality of sub - pixels, and each sub - pixel is correspondingly disposed with one light - emitting element; the sub - pixels include red sub - pixels, green sub - pixels, and blue sub - pixels; the light - emitting element emits blue light or ultraviolet light.

[0026] Optionally, the first color conversion layer includes a first color conversion sub - part disposed on the red sub - pixel and a second color conversion sub - part disposed on the green sub - pixel.

[0027] Optionally, the blue sub - pixel includes a first transparent part disposed on a side of the epitaxial layer close to the first semiconductor layer, and at least one third opening exposing the first semiconductor layer is provided on the first transparent part, and the first electrode contacts the first semiconductor layer through the third opening.

[0028] Optionally, the second color conversion layer includes a first color conversion sub - part disposed on the red sub - pixel and a second color conversion sub - part disposed on the green sub - pixel.

[0029] Optionally, the blue sub - pixel includes a second transparent part disposed on a side of the epitaxial layer close to the second semiconductor layer, and at least one fourth opening exposing the second semiconductor layer is provided on the second transparent part, and the second electrode contacts the second semiconductor layer through the fourth opening.

[0030] Optionally, the reflection layer includes a first reflection part disposed on the red sub - pixel and a second reflection part disposed on the green sub - pixel, and a positive projection of the first reflection part on the array substrate at least partially overlaps a positive projection of the red sub - pixel on the array substrate.

[0031] Optionally, one of the first semiconductor layer and the second semiconductor layer is an N - type GaN layer, and the other is a P - type GaN layer.

[0032] The first electrode is a transparent electrode, and the second electrode is a reflective electrode.

[0033] In a second aspect, the present application provides a method for manufacturing a display panel, including:

[0034] Forming an epitaxial layer, including: providing a substrate, and sequentially forming a first semiconductor layer, a quantum well light-emitting layer, and a second semiconductor layer on the substrate;

[0035] Forming a color conversion layer on the epitaxial layer to form a light-emitting element, including: forming a first color conversion layer on a side of the epitaxial layer close to the first semiconductor layer, and at least one first opening exposing the first semiconductor layer is provided on the first color conversion layer; and / or, forming a second color conversion layer on a side of the epitaxial layer close to the second semiconductor layer, and at least one second opening exposing the second semiconductor layer is provided on the second color conversion layer;

[0036] Forming a first electrode on a side close to the first semiconductor layer and a second electrode on a side close to the second semiconductor layer; wherein, the first electrode contacts the first semiconductor layer through the first opening, and the second electrode contacts the second semiconductor layer through the second opening;

[0037] Transferring a plurality of the light-emitting elements onto an array substrate.

[0038] Optionally, forming a first color conversion layer on a side of the epitaxial layer close to the first semiconductor layer, the method including:

[0039] After forming the second electrode on a side close to the second semiconductor layer, forming a sacrificial layer on a surface of the second electrode away from the first semiconductor layer, and transferring the epitaxial layer onto an intermediate substrate through the sacrificial layer;

[0040] Removing the substrate on the epitaxial layer;

[0041] Etching a surface of the first semiconductor layer away from the second semiconductor layer to form a plurality of first grooves;

[0042] Forming the first color conversion layer in the first grooves.

[0043] Optionally, forming a second color conversion layer on a side of the epitaxial layer close to the second semiconductor layer, the method including:

[0044] Forming the second color conversion layer on a surface of the second semiconductor layer away from the first semiconductor layer;

[0045] Patterning the second color conversion layer to form at least one of the second openings.

[0046] Optionally, transferring a plurality of the light-emitting elements onto an array substrate, the method comprising:

[0047] Removing the intermediate substrate and the sacrificial layer to expose the second electrode;

[0048] Providing an array substrate, on which a bonding metal layer bonded to the second electrode is provided;

[0049] Bonding through the second electrode and the bonding metal layer.

[0050] In a third aspect, the present application provides a display device, including the display panel as described in any one of the above.

[0051] The technical solutions provided by the embodiments of the present application may include the following beneficial effects:

[0052] For the display panel provided by the embodiment of the present application, by providing a color conversion layer between the first electrode and the second electrode, through the reflection of light between the first electrode and the second electrode, the light utilization rate is high, the light efficiency is improved, and the technical effect of achieving a high color gamut can be realized without specially manufacturing a CF, solving the technical problems of complex existing processes and low light efficiency. Description of the Drawings

[0053] By reading the detailed description of the non-limiting embodiments with reference to the following drawings, other features, objects, and advantages of the present application will become more apparent:

[0054] Figure 1 A schematic structural diagram of a display panel provided by an embodiment of the present application;

[0055] Figure 2 A schematic structural diagram of a display panel provided by an embodiment of the present application;

[0056] Figure 3 A schematic structural diagram of an array substrate provided by an embodiment of the present application;

[0057] Figure 4 A schematic structural diagram of a display panel provided by an embodiment of the present application;

[0058] Figure 5 A schematic structural diagram of a display panel provided by an embodiment of the present application;

[0059] Figure 6 A schematic structural diagram of a display panel provided by an embodiment of the present application;

[0060] Figure 7 A schematic structural diagram of a display panel provided by an embodiment of the present application;

[0061] Figure 8A schematic structural diagram of a display panel provided by an embodiment of the present application;

[0062] Figure 9 A top view of a display panel provided by an embodiment of the present application;

[0063] Figure 10 A schematic structural diagram of a display panel provided by an embodiment of the present application;

[0064] Figure 11 A schematic structural diagram of a display panel provided by an embodiment of the present application;

[0065] Figure 12 A schematic structural diagram of a display panel provided by an embodiment of the present application;

[0066] Figure 13 A schematic structural diagram of a display panel provided by an embodiment of the present application;

[0067] Figure 14 A partial schematic structural diagram of an array substrate provided by an embodiment of the present application;

[0068] Figure 15 A partial schematic structural diagram of a display panel provided by an embodiment of the present application;

[0069] Figure 16 A partial schematic structural diagram of a display panel provided by an embodiment of the present application;

[0070] Figure 17 A schematic diagram of the preparation process of a display panel provided by an embodiment of the present application;

[0071] Figure 18 A partial schematic structural diagram of a display panel provided by an embodiment of the present application;

[0072] Figure 19 A schematic structural diagram of a display panel provided by an embodiment of the present application;

[0073] Figure 20 A partial schematic structural diagram of a display panel provided by an embodiment of the present application;

[0074] Figure 21 A partial schematic structural diagram of a display panel provided by an embodiment of the present application;

[0075] Figure 22 A partial schematic structural diagram of a display panel provided by an embodiment of the present application;

[0076] Figure 23 A partial schematic structural diagram of a display panel provided by an embodiment of the present application. Detailed Implementation Modes

[0077] The present application will be further described in detail below with reference to the accompanying drawings and embodiments. It can be understood that the specific embodiments described herein are only used to explain the related invention and are not intended to limit the invention. Additionally, it should be noted that for the sake of description, only the parts related to the invention are shown in the drawings.

[0078] It should be noted that, without conflict, the embodiments in the present application and the features in the embodiments can be combined with each other. The present application will be described in detail below with reference to the drawings and embodiments.

[0079] Please refer to Figure 1-2 The present application provides a display panel, including:

[0080] An array substrate 100;

[0081] A light-emitting layer 200 disposed on the array substrate 100, the light-emitting layer 200 includes a plurality of light-emitting elements arranged in an array, the light-emitting elements include an epitaxial layer 210 and a color conversion layer 220, and the epitaxial layer 210 includes a first semiconductor layer 211, a quantum well light-emitting layer 212, and a second semiconductor layer 213 which are stacked;

[0082] A first electrode 300 disposed on one side close to the first semiconductor layer 211 and a second electrode 400 disposed on one side close to the second semiconductor layer 213;

[0083] Wherein, the color conversion layer 220 includes a first color conversion layer 221 disposed on one side of the epitaxial layer 210 close to the first semiconductor layer 211, at least one first opening 223 exposing the first semiconductor layer 211 is disposed on the first color conversion layer 221, and the first electrode 300 is in contact with the first semiconductor layer 211 through the first opening 223; and / or

[0084] The color conversion layer 220 includes a second color conversion layer 222 disposed on one side of the epitaxial layer 210 close to the second semiconductor layer 213, at least one second opening 224 exposing the second semiconductor layer 213 is disposed on the second color conversion layer 222, and the second electrode 400 is in contact with the second semiconductor layer 213 through the second opening 224.

[0085] In the present invention, the light-emitting element can be a micro light-emitting diode (Micro Light Emitting Diode Display, Micro LED), or can also be a nano light-emitting diode (Nano-Pixel Light-Emitting Display, Nano LED).

[0086] The light-emitting elements may be arranged in an array along a first direction or a second direction on the light-emitting layer 200. In the embodiments of the present application, the first direction and the second direction may be perpendicular to each other or nearly perpendicular, and the present application does not limit the specific directions of the first direction and the second direction.

[0087] Wherein, one of the first semiconductor layer 211 and the second semiconductor layer 213 is an N-type GaN layer, and the other is a P-type GaN layer; in this embodiment, the first semiconductor layer 211 is disposed on a side of the quantum well light-emitting layer 212 away from the array substrate 100, and the second semiconductor layer 213 is disposed on a side of the quantum well light-emitting layer 212 close to the array substrate 100; exemplarily in the present application, the first semiconductor layer 211 is an N-type GaN layer, and the second semiconductor layer 213 is a P-type GaN layer. The material of the quantum well light-emitting layer 212 may be InGaN, and the component of In determines the color of light emitted by the LED structure. In the embodiments of the present application, the color of light emitted by the light-emitting elements is not limited and may be designed to be blue or ultraviolet light. Of course, the present application is not limited thereto, and in different embodiments, the color of light emitted by the light-emitting elements may also be green, etc.

[0088] In this embodiment, the first electrode 300 is disposed on a side of the first semiconductor layer 211 away from the array substrate 100, and the second electrode 400 is disposed on a side of the second semiconductor layer 213 away from the array substrate 100. Corresponding to the first semiconductor layer 211 being an N-type GaN layer and the second semiconductor layer 213 being a P-type GaN layer, the first electrode 300 is a cathode, and the second electrode 400 is an anode.

[0089] In the embodiments of the present application, the first electrode 300 is a transparent electrode, and the second electrode 400 is a reflective electrode.

[0090] In the embodiments of the present application, the transparent electrode may be indium tin oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AZO), zinc oxide (ZnO), indium gallium zinc oxide (IGZO), or other suitable materials.

[0091] In the embodiments of the present application, the second electrode 400 is a reflective electrode, and the material of the second electrode 400 includes a metal. In the embodiments of the present application, the material of the second electrode 400 is not limited. The second electrode 400 may include, for example, a reflective film formed of Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, or a mixture thereof, and a transparent film formed of ITO, IZO, ZnO, or In2O3. In an exemplary embodiment, the second electrode 400 may have a structure of ITO / Ag / ITO. In the embodiments of the present application, by using a reflective electrode as the second electrode 400, the light emitted by the pixel unit passing through the second electrode 400 can be reflected to the light-emitting side of the light-emitting element.

[0092] In the embodiments of the present application, as Figure 3 shown, the array substrate 100 includes a substrate 110 and a driving layer 111 disposed on the substrate 110. The driving layer 111 includes a plurality of pixel circuits and a plurality of signal lines. The pixel circuit may include one or more thin-film transistors, and the signal lines are used to provide signals to the pixel circuits. The plurality of signal lines may include a common voltage line, a driving voltage line, a power supply line, a clock signal line, a data line, and the like.

[0093] In the embodiments of the present application, a bonding metal layer 120 is disposed on the array substrate 100 and is bonded to the second electrode 400. The bonding metal layer 120 is disposed on one side of the array substrate 100 close to the second electrode 400, and the bonding metal layer 120 can be electrically connected to the driving layer 111 through a metal via 130. The bonding metal layer 120 may include, for example, Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, or a mixture thereof

[0094] Optionally, the display panel includes a plurality of sub-pixels, and each sub-pixel is correspondingly disposed with one light-emitting element; the sub-pixels include a red sub-pixel R, a green sub-pixel G, and a blue sub-pixel B; the light-emitting element emits blue light or ultraviolet light.

[0095] It should be noted that, according to the type of the light-emitting element, the setting manners of the first color conversion layer 221 and the second color conversion layer 222 are different. For example, when the light-emitting element emits ultraviolet light, as Figure 1-2As shown, the first color conversion layer 221 includes a third color rotor part 203, and the second color conversion layer 222 includes a third color conversion sub-part 206. The third color rotor part 203 and the third color conversion sub-part 206 are respectively used to convert the ultraviolet light emitted by the light-emitting element into blue light and emit it. The specific setting manner of the third color rotor part 203 can refer to the first color rotor part 201 and the second color rotor part 202, and the specific setting manner of the third color conversion sub-part 206 can refer to the first color conversion sub-part 204 and the second color conversion sub-part 205. When the light emitted by the light-emitting element is blue light, transparent organic resin is provided at the positions corresponding to the third color rotor part 203 and the third color conversion sub-part 206. Of course, in other embodiments, the third color rotor part 203 and the third color conversion sub-part 206 can also be cancelled.

[0096] The first color conversion layer 221 includes a first color rotor part 201 provided on the red sub-pixel R and a second color rotor part 202 provided on the green sub-pixel G. Optionally, the first color conversion layer 221 includes a third color rotor part 203 provided on the blue sub-pixel B. Wherein, the first color rotor part 201 includes red quantum dots, and the second color rotor part 202 includes green quantum dots. The third color rotor part 203 includes blue quantum dots.

[0097] When the light emitted by the light-emitting element is blue light, as Figure 4 shown, at the position corresponding to the blue sub-pixel B, the blue sub-pixel B includes a first transparent part 207 provided on one side of the epitaxial layer 210 close to the first semiconductor layer 211. At least one third opening 225 exposing the first semiconductor layer 211 is provided on the first transparent part 207, and the first electrode 300 contacts the first semiconductor layer 211 through the third opening 225.

[0098] It can be understood that in the embodiments of the present application, the setting of the first transparent part 207 can refer to the setting manner of the third color conversion sub-part 206, and details are not described herein again. Of course, in different embodiments, the structures of the third color rotor part 203 and the first transparent part 207 can be cancelled, and the first electrode 300 is in direct contact with the first semiconductor layer 211.

[0099] The second color conversion layer 222 includes a first color conversion sub-part 204 provided on the red sub-pixel and a second color conversion sub-part 205 provided on the green sub-pixel. Optionally, the second color conversion layer 222 includes a third color conversion sub-part 206 provided on the blue sub-pixel. Wherein, the first color conversion sub-part 204 includes red quantum dots, and the second color conversion sub-part 205 includes green quantum dots. The third color conversion sub-part 206 includes blue quantum dots.

[0100] Similarly, when the light emitted by the light-emitting element is blue light, as Figure 5 shown, the blue sub-pixel B includes a second transparent portion 208 disposed on a side of the epitaxial layer 210 close to the second semiconductor layer 213. At least one fourth opening 226 exposing the second semiconductor layer 213 is disposed on the second transparent portion 208, and the second electrode 400 contacts the second semiconductor layer 213 through the fourth opening 226.

[0101] It can be understood that in the embodiments of the present application, the setting of the second transparent portion 208 can refer to the setting manner of the third color conversion portion 206, which will not be elaborated herein. Of course, in different embodiments, the structures of the third color conversion portion 206 and the second transparent portion 208 can be cancelled, and the second electrode 400 is in direct contact with the second semiconductor layer 213.

[0102] In order to improve the optical characteristics of the light-emitting element, in an embodiment of the present application, the display panel further includes a reflection layer 500 disposed on a surface of the light-emitting layer 200 away from the array substrate 100. The first electrode 300 is disposed on a surface of the reflection layer 500 away from the array substrate 100. A first via 501 exposing the first semiconductor layer 211 is disposed on the reflection layer 500, and the first electrode 300 contacts the first semiconductor layer 211 through the first via 501.

[0103] It should be noted that in the present application, the reflection layer 500 can adopt DBR (distributed Bragg reflector). Those skilled in the art can further preferably determine the single-period thickness range and the number of periods of the reflection layer 500 according to the different emission wavelengths of the light-emitting diodes of the products to be prepared. In the embodiments of the present application, the reflection layer 500 is disposed between the first electrode 300 and the first semiconductor layer 211, and a DBR structure formed by alternately arranging SiO2 and Si3N4 layers in sequence can be adopted to form a reflective electrode on the first electrode 300 and improve the reflectivity of the first electrode 300. By reflecting light between the first electrode 300 and the second electrode 400, the light extraction efficiency of the LED is effectively improved.

[0104] In an embodiment of the present application, the reflection layer 500 can reflect blue light and can transmit red light and green light. In another embodiment of the present application, the reflection layer 500 can reflect ultraviolet light and can transmit red light, green light, and blue light.

[0105] When the light emitted by the light-emitting element is ultraviolet light, the reflective layer 500 includes a first reflective portion 510 disposed on the red sub-pixel R, a second reflective portion 520 disposed on the green sub-pixel G, and a third reflective portion 530 disposed on the blue sub-pixel B. The orthographic projection of the first reflective portion 510 on the array substrate 100 at least partially overlaps with the orthographic projection of the red sub-pixel R on the array substrate 100. The orthographic projection of the second reflective portion 520 on the array substrate 100 at least partially overlaps with the orthographic projection of the green sub-pixel G on the array substrate 100. The orthographic projection of the third reflective portion 530 on the array substrate 100 at least partially overlaps with the orthographic projection of the blue sub-pixel B on the array substrate 100.

[0106] It can be understood that in the embodiments of the present application, the setting manner of the third reflective portion 530 is not limited. When the light emitted by the light-emitting element is ultraviolet light, the setting manner of the third reflective portion 530 can refer to the first reflective portion 510 and the second reflective portion 520.

[0107] When the light emitted by the light-emitting element is blue light, as Figure 6 shown, a third transparent portion 209 (transparent organic resin) can be provided at the position corresponding to the third reflective portion 530. The setting of the third transparent portion 209 can refer to the third reflective portion 530. Of course, in other embodiments, the settings of the third reflective portion 530 and the third transparent portion 209 can be cancelled, as Figure 7 shown, the first electrode 300 is in direct contact with the first semiconductor layer 211, and the present application does not limit this. It is set as needed in different embodiments.

[0108] It should be noted that in the embodiments of the present application, the first electrode 300 can be disposed on the side of the reflective layer 500 away from the array substrate 100, and the first electrode 300 can also be disposed on the side of the reflective layer 500 close to the array substrate 100. It is set as needed in different embodiments, and the present application does not limit this.

[0109] In the embodiments of the present application, by fabricating the color conversion layer 220 between the first electrode 300 and the second electrode 400, and through the light utilization rate between the first electrode 300 and the second electrode 400, the QD (quantum dot) excitation of the color conversion layer 220 is realized, the light efficiency is improved, and the technical effect of high color gamut can be achieved without specially fabricating the CF. In this way, the uniformity of the emitted light can be improved, and the display panel can be provided without a light homogenizing film layer or with a reduced number of light homogenizing film layers, which is beneficial to reducing the thickness of the display panel.

[0110] In the embodiments of the present application, quantum dots are provided on the color conversion layer 220. Most of the quantum dots are nanomaterials composed of group II-VI or III-V elements. After being excited by external energy, quantum dots of different sizes will emit fluorescent lights of different wavelengths, that is, lights of various colors.

[0111] In the embodiments of the present application, the color conversion layer 220 may be disposed on one side of the first semiconductor layer 211 (i.e., the first color conversion layer 221), so that the light of the light-emitting element can undergo color conversion when exiting through the first color conversion layer 221; the color conversion layer 220 may also be on one side of the second semiconductor layer 213 (i.e., the second color conversion layer 222), so that the light of the light-emitting element can undergo color conversion on the side facing the second electrode 400, and after being reflected by the second electrode 400, it can be emitted from the display side. In the embodiments of the present application, the position of the color conversion layer 220 is not limited. The color conversion layer 220 may be disposed on any film layer between the first electrode 300 and the second electrode 400, or the light conversion effect may be improved by providing multiple layers of the color conversion layer 220.

[0112] In the embodiments of the present application, the setting position of the color conversion layer 220 is not limited. In the embodiments of the present application, multiple different embodiments are exemplified. The color conversion layer 220 may be disposed between the first semiconductor layer 211 and the first electrode 300, or within the first semiconductor layer 211, or between the second semiconductor layer 213 and the second electrode 400 serving as a reflective electrode. The following will be described by way of examples.

[0113] Embodiment 1

[0114] As Figure 1 and Figure 4 shown, the color conversion layer 220 includes a first color conversion layer 221 disposed on the surface of the first semiconductor layer 211 away from the array substrate 100; the first electrode 300 is disposed on the side of the first color conversion layer 221 away from the array substrate 100. A first opening 223 is provided on the first color conversion layer 221, and the first electrode 300 is in contact with the first semiconductor layer 211 through the first opening 223.

[0115] In the embodiments of the present application, the first electrode 300 may be disposed on the surface of the reflective layer 500 away from the array substrate 100 or the reflective layer 500 may be disposed on the surface of the first electrode 300 away from the array substrate 100.

[0116] It should be noted that in the embodiments of the present application, the light-emitting element further includes at least one insulating layer disposed on the epitaxial layer 210. The insulating layer is disposed on the side surface of the light-emitting element and can surround the side edges of the second electrode 400.

[0117] The material of the insulating layer can be silicon nitride, silicon oxide, aluminum oxide, etc. It can be grown between two adjacent light-emitting elements on the epitaxial layer 210 by Plasma Enhanced Chemical Vapor Deposition (PECVD for short), with a thickness of 0.1 - 2 μm. It can achieve insulating isolation between two adjacent light-emitting elements, and can also achieve insulation between the first electrode 300 and the second electrode 400 on the same light-emitting element.

[0118] Of course, in other embodiments, the light-emitting element can adopt a variety of different structures in the prior art, and the present application does not limit this. The light-emitting principle of Mini LED is through two semiconductor layers, a P-type semiconductor layer and an N-type semiconductor layer, and a PN junction is formed between these two materials. When a voltage is applied, electrons will migrate from the N-type semiconductor to the P-type semiconductor, and at the same time, energy is released to emit light.

[0119] In an embodiment of the present application, the first electrode 300 is disposed on a surface of the first color conversion layer 221 away from the second semiconductor layer 213; a gap 230 is provided between the epitaxial layers 210 of adjacent light-emitting elements, and the first electrode 300 is electrically connected to the array substrate 100 through the gap 230. The reflective layer 500 is disposed on a surface of the first electrode 300 away from the array substrate 100.

[0120] It should be noted that, in other embodiments, a planarization layer is filled in the gap 230 between the light-emitting elements. The surface of the planarization layer away from the array substrate 100 is flush with the surface of the first semiconductor layer 211 away from the substrate 110, and the first electrode 300 is disposed on the surfaces of the first semiconductor layer 211 and the planarization layer away from the array substrate 100.

[0121] In another embodiment of the present application, the reflective layer 500 is disposed on a surface of the first semiconductor layer 211 away from the array substrate 100, and the first electrode 300 is disposed on a surface of the reflective layer 500 away from the second semiconductor layer 213; a gap 230 is provided between the epitaxial layers 210 of adjacent light-emitting elements, and the reflective layer 500 is filled in the gap 230.

[0122] Embodiment Two

[0123] As Figure 8-9As shown, in the embodiment of the present application, by disposing the first color conversion layer 221 within the first semiconductor layer 211, the contact area between the first electrode 300 and the first semiconductor layer 211 can be increased, the thickness of the display panel can be reduced, and the light-emitting performance of the light-emitting element can be improved.

[0124] Specifically, the first semiconductor layer 211 is disposed on a side of the quantum well light-emitting layer 212 away from the array substrate 100; a plurality of first grooves 330 are spaced apart on the first semiconductor layer 211, and the first grooves 330 do not penetrate through the first semiconductor layer 211.

[0125] The first color conversion layer 221 includes filling the first grooves 330 and forming a plurality of the first openings 223 between two adjacent first grooves 330. A surface of the first color conversion layer 221 on a side away from the second semiconductor layer 213 is flush with a surface of the first semiconductor layer 211 on a side away from the second semiconductor layer 213.

[0126] In the embodiment of the present application, by disposing the first color conversion layer 221 inside the first semiconductor layer 211, while reducing the thickness of the display panel, the height of the first color conversion layer 221 can be extended, the light conversion effect can be achieved, and the display uniformity can be improved.

[0127] In the embodiment of the present application, the first color conversion layer 221 does not penetrate to a surface of the first semiconductor layer 211 close to the quantum well light-emitting layer 212, ensuring the contact effect between the first semiconductor layer 211 and the quantum well light-emitting layer 212 and ensuring the light-emitting effect of the light-emitting element. The height of the first grooves 330 is not limited in the embodiment of the present application and is set as needed in different embodiments.

[0128] It should be noted that in the embodiment of the present application, there is a gap between two adjacent first grooves 330, and the gap exposes the surface of the first semiconductor layer 211. Therefore, when the first electrode 300 is disposed on the surface of the first semiconductor layer 211, the first electrode 300 contacts the first semiconductor layer 211 through the gap, and the gap can be regarded as the first opening 223 described in the present application.

[0129] The width and the number of the gaps on the first grooves 330 are not limited in the embodiment of the present application and are set as needed in different embodiments. In an embodiment of the present application, the first grooves 330 are periodically disposed on the first semiconductor layer 211. The grating period can be determined by the diffraction angle of light with a given wavelength. By adopting the groove method for the first color conversion layer 221, the light passing through the first grooves 330 can be optically coupled, the light utilization rate of the first color conversion layer 221 can be improved, and the light-emitting effect of the light-emitting element can be improved.

[0130] In one embodiment of the present application, as Figure 10 shown, the first electrode 300 is disposed on a surface of the first color conversion layer 221 away from the second semiconductor layer 213; a gap 230 is provided between the epitaxial layers 210 of adjacent light-emitting elements, and the first electrode 300 is electrically connected to the array substrate 100 through the gap 230. The reflective layer 500 is disposed on a surface of the first electrode 300 away from the array substrate 100.

[0131] It should be noted that, in other embodiments, as Figure 11 shown, the gap 230 between the light-emitting elements is filled with a planarization layer, and the planarization layer is flush with a surface of the first semiconductor layer 211 away from the substrate 110 on a surface away from the array substrate 100, and the first electrode 300 is disposed on surfaces of the first semiconductor layer 211 and the planarization layer away from the array substrate 100.

[0132] As Figure 12 shown, in this embodiment, in order to improve the contact effect between the first semiconductor layer 211 and the first electrode 300, the first electrode 300 includes a first sub-electrode 310 disposed on a surface of the reflective layer 500 close to the array substrate 100 and a second sub-electrode 320 disposed on a surface of the reflective layer 500 away from the array substrate 100, and the first sub-electrode 310 is in contact with the first semiconductor layer 211.

[0133] A second via 502 exposing the first sub-electrode 310 is provided on the reflective layer 500, and the second sub-electrode 320 is in contact with the first sub-electrode 310 through the second via 502.

[0134] Optionally, the first sub-electrode 310 is disposed on a surface of the first semiconductor away from the second semiconductor, and a plurality of second grooves 340 are spaced on the first sub-electrode 310, and the second grooves 340 extend to the first semiconductor layer 211 and do not penetrate the first semiconductor;

[0135] The first color conversion layer 221 includes filling the second grooves 340 and forming the first openings 223 between two adjacent second grooves 340, and the first color conversion layer 221 is flush with a surface of the first sub-electrode 310 away from the second semiconductor layer 213 on a surface away from the second semiconductor layer 213.

[0136] In the embodiments of the present application, by providing transparent electrodes on both sides of the reflective layer 500, the contact effect of the transparent electrodes can be improved, so as to further improve the light effect of the light-emitting element.

[0137] It should be noted that in the embodiments of the present application, the first groove 330 and the second groove 340 may be formed by the same etching process, and the first color conversion layer 221 in the first groove 330 and the second color conversion layer 222 in the second groove 340 may be formed by the same process. Of course, in other embodiments, the first groove 330 and the second groove 340 may be formed by different etching processes, and the first color conversion layer 221 in the first groove 330 and the second color conversion layer 222 in the second groove 340 may also be formed separately. The present application does not limit this.

[0138] In the embodiments of the present application, by extending the first color conversion layer 221 from the first sub-electrode 310 into the first semiconductor layer 211, the contact area between the first electrode 300 and the first semiconductor layer 211 can be increased through the first sub-electrode 310, and the height of the first color conversion layer 221 can be extended, so as to improve the light conversion effect of the first color conversion layer 221.

[0139] Embodiment Three

[0140] As Figure 2 、 Figure 5 、 Figure 7 、 Figure 13 shown, in the embodiments of the present application, on the basis of Embodiment One or Embodiment Two, the color conversion layer 220 includes a second color conversion layer 222 provided on the side of the epitaxial layer 210 close to the second semiconductor layer 213.

[0141] In this embodiment, the second semiconductor is provided on the side of the quantum well light-emitting layer 212 close to the array substrate 100; the second color conversion layer 222 is provided on the surface of the first semiconductor layer 211 away from the second semiconductor layer 213, and at least one of the second openings 224 is provided on the second color conversion layer 222.

[0142] As Figure 2 shown, the second color conversion layer 222 includes a first color conversion sub-portion 204 provided on the red sub-pixel R, a second color conversion sub-portion 205 provided on the green sub-pixel G, and a third color conversion sub-portion 206 provided on the blue sub-pixel B. Among them, the first color conversion sub-portion 204 includes red quantum dots, the second color conversion sub-portion 205 includes green quantum dots, and the third color conversion sub-portion 206 includes blue quantum dots.

[0143] When the light emitted by the light-emitting element is blue light, optionally, as Figure 5 、Figure 7 , Figure 13 As shown in Figure 13 , the blue sub-pixel B includes a second transparent portion 208 disposed on a side of the epitaxial layer 210 close to the second semiconductor layer 213. At least one fourth opening 226 exposing the second semiconductor layer 213 is provided on the second transparent portion 208, and the second electrode 400 contacts the second semiconductor layer 213 through the fourth opening 226.

[0144] In the embodiment of the present application, by providing a second color conversion layer 222 between the second semiconductor layer 213 and the second electrode 400, light is converted and emitted before being reflected by the second electrode 400. Of course, the light incident on the second electrode 400 through the second opening 224 on the second color conversion layer 222 can also pass through the second color conversion layer 222 again for secondary light conversion after reflection, improving the light utilization rate.

[0145] The present application also provides a method for manufacturing a display panel, including:

[0146] S100. Forming an epitaxial layer 210, including: providing a substrate 600, and sequentially forming a first semiconductor layer 211, a quantum well light-emitting layer 212, and a second semiconductor layer 213 on the substrate 600.

[0147] The specific type of the substrate 600 may be a sapphire substrate 600, a silicon substrate 600, an n-type doped silicon carbide substrate 600, or an n-type doped gallium nitride substrate 600. Those skilled in the art can flexibly select a suitable type of substrate 600 according to the specific structure type of the LED chip. In this embodiment, the first semiconductor layer 211 may be an N-type GaN layer, the second semiconductor layer 213 may be a P-type GaN layer, and the material of the quantum well layer may be InGaN.

[0148] S200. Forming a color conversion layer 220 on the epitaxial layer 210 to form a light-emitting element, including: forming a first color conversion layer 221 on a side of the epitaxial layer 210 close to the first semiconductor layer 211, and at least one first opening 223 exposing the first semiconductor layer 211 is provided on the first color conversion layer 221; and / or, forming a second color conversion layer 222 on a side of the epitaxial layer 210 close to the second semiconductor layer 213, and at least one second opening 224 exposing the second semiconductor layer 213 is provided on the second color conversion layer 222.

[0149] S300. Form a first electrode 300 on one side close to the first semiconductor layer 211 and form a second electrode 400 on one side close to the second semiconductor layer 213; wherein, the first electrode 300 is in contact with the first semiconductor layer 211 through the first opening 223, and the second electrode 400 is in contact with the second semiconductor layer 213 through the second opening 224.

[0150] S400. Transfer a plurality of the light-emitting elements onto the array substrate 100.

[0151] Embodiment 4

[0152] In the embodiment of the present application, corresponding to the structure of the display panel in Embodiment 2, the method includes:

[0153] S100. Form an epitaxial layer 210, including: providing a substrate 600, and sequentially forming a first semiconductor layer 211, a quantum well light-emitting layer 212, and a second semiconductor layer 213 on the substrate 600. The formed structure is as Figure 14 shown.

[0154] S210. Form a second electrode 400 on the surface of the side of the second semiconductor layer 213 away from the first semiconductor layer 211. The formed structure is as Figure 15 shown.

[0155] S220. After forming a second electrode 400 on one side of the second semiconductor layer 213, form a sacrificial layer 700 on the surface of the second electrode 400 on the side away from the first semiconductor layer 211, and transfer the epitaxial layer 210 onto an intermediate substrate 800 through the sacrificial layer 700.

[0156] The sacrificial layer 700 can be a bonding adhesive. By transferring the epitaxial layer 210 onto the intermediate substrate 800, it is convenient to subsequently strip the substrate 600 and form a first color conversion layer 221 on the surface after stripping the substrate 600. In the embodiment of the present application, the method of transferring the epitaxial layer 210 onto the intermediate substrate 800 can adopt various transfer techniques in the prior art, and the present application does not limit this.

[0157] S230. Remove the substrate 600 on the epitaxial layer 210. The formed structure is as Figure 16 shown.

[0158] For example, the substrate 600 on the side of the first semiconductor layer 211 in the epitaxial layer 210 can be removed by a femtosecond (or picosecond) pulsed laser stripping method. For example, using a femtosecond pulsed laser with a wavelength of nm, the first semiconductor layer 211 can also be thinned.

[0159] S240. Etch the surface of the first semiconductor layer 211 away from the second semiconductor layer 213 to form a plurality of first grooves 330.

[0160] In the embodiment of the present application, as Figure 17 shown, the first grooves 330 can be etched by using a mask 910 and photoresist 920. For example, photoresist 920 is formed on the first semiconductor layer 211, and after exposure and development, the residual photoresist 920 is removed to form the first grooves 330.

[0161] The material of the photoresist 920 in the embodiment of the present application can be a positive photoresist 920. After exposure and development through the mask 910, the photoresist 920 layer in the exposed area can be removed during development, and the photoresist 920 in the unexposed area can be retained during development. A negative photoresist 920 layer can also be used, that is, the photoresist 920 layer in the exposed area is retained during development, while the photoresist 920 in the unexposed area is removed during development. The present application does not limit this.

[0162] S250. Form the first color conversion layer 221 in the first grooves 330. The formed structure is as Figure 18 shown.

[0163] It should be noted that in the embodiment of the present application, the process methods for forming each film layer include depositing a film layer, coating photoresist 920, mask exposure, development, etching, and stripping photoresist 920, etc. Deposition can be any one or more selected from sputtering, evaporation, and chemical vapor deposition. Coating can be any one or more selected from spraying and spin coating. Etching can be any one or more selected from dry etching and wet etching. Selection is made according to needs in different embodiments.

[0164] In addition, it should be noted that in the embodiment of the present application, each light-emitting element located on the same intermediate substrate 800 can correspond to a color conversion layer 220 of the same color. For example, it can be the first color conversion sub-part 201 corresponding to the red sub-pixel R and the second color conversion sub-part 202 provided on the green sub-pixel G, etc. After the first color conversion layer 221 is formed, the light-emitting elements are separated, and then the separated light-emitting elements are transferred to the array substrate 100 for sub-pixel arrangement.

[0165] Specifically, the method of transferring a plurality of the light-emitting elements to the array substrate 100 includes:

[0166] S260. Remove the intermediate substrate 800 and the sacrificial layer 700 to expose the second electrode 400;

[0167] Removing the intermediate substrate 800 and the sacrificial layer 700 can be removed and thinned by femtosecond (or picosecond) pulsed laser lift-off method.

[0168] S270. Provide an array substrate 100, and a bonding metal layer 120 bonded to the second electrode 400 is provided on the array substrate 100;

[0169] S280. Bond through the second electrode 400 and the bonding metal layer 120. The formed structure is as Figure 8 and Figure 10 shown.

[0170] In the embodiment of the present application, the first electrode 300 and the reflective layer 500 can be used as a common layer, and can be formed after transferring the light-emitting element to the array substrate 100.

[0171] S290. Form a first electrode 300 and a reflective layer 500 in sequence on the side of the first semiconductor layer 211 on the array substrate 100 away from the array substrate 100. The formed structure is as Figure 19 shown. Alternatively, form a reflective layer 500 and a first electrode 300 in sequence on the side of the first semiconductor layer 211 on the array substrate 100 away from the array substrate 100. The formed structure is as Figure 6 shown.

[0172] Embodiment Five

[0173] In the embodiment of the present application, corresponding to the structure of the display panel in Embodiment Three, the method includes:

[0174] ST100. Form an epitaxial layer 210, including: providing a substrate 600, and sequentially forming a first semiconductor layer 211, a quantum well light-emitting layer 212, and a second semiconductor layer 213 on the substrate 600. The formed structure is as Figure 14 shown.

[0175] ST210. Form the second color conversion layer 222 on the surface of the second semiconductor layer 213 on the side away from the first semiconductor layer 211; the formed structure is as Figure 20 shown.

[0176] ST220. Pattern the second color conversion layer 222 to form at least one second opening 224; the formed structure is as Figure 21 shown.

[0177] ST230. Form a second electrode 400 on the side close to the second color conversion layer 222 on the side away from the first semiconductor layer 211; the second electrode 400 contacts the second semiconductor layer 213 through the second opening 224. The formed structure is asFigure 22 as shown

[0178] ST240. A sacrificial layer 700 is formed on a surface of the second electrode 400 away from the first semiconductor layer 211, and the epitaxial layer 210 is transferred onto an intermediate substrate 800 through the sacrificial layer 700. The formed structure is as Figure 23 shown

[0179] ST250. The substrate 600 on the epitaxial layer 210 is removed.

[0180] ST260. A plurality of the light-emitting elements are transferred onto an array substrate 100.

[0181] Among them, the specific process methods of each step can refer to Embodiment 4, and the present application will not elaborate herein.

[0182] In the field of display technology, the patterning process may only include a photolithography process, or include a photolithography process and an etching step, and may also include other processes for forming a predetermined pattern such as printing and inkjet; the photolithography process refers to a process for forming a pattern using a photoresist 920, a mask, an exposure machine, etc. including processes such as film formation, exposure, and development. The corresponding patterning process can be selected according to the structure formed in the present invention.

[0183] It should be noted that the above settings of materials and values are only for facilitating those skilled in the art to fully implement this embodiment, and they can be adjusted accordingly according to actual needs. Those skilled in the art should know that any obvious conventional material substitution and numerical change are within the protection scope of this embodiment.

[0184] Based on the same concept, the present application provides a display device including a display panel as described in any one of the above. The display device can be any product or component with a display function such as a mobile phone, a tablet computer, a wearable device, an in-vehicle display, a television, a monitor, a laptop computer, a digital photo frame, a navigator, etc.

[0185] It should be understood that the orientation or positional relationship indicated by terms such as "length", "width", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. is based on the orientation or positional relationship shown in the drawings, and is only for facilitating the description of the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation to the present invention.

[0186] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, features defined with "first" and "second" may explicitly or implicitly include one or more of such features. In the description of the present invention, "a plurality of" means two or more, unless otherwise specifically defined.

[0187] Unless otherwise defined, the technical and scientific terms used herein have the same meanings as commonly understood by those skilled in the technical field of the present invention. The terms used herein are only for the purpose of describing specific embodiments and are not intended to limit the present invention. Terms such as "arranged" as used herein may mean that one component is directly attached to another component or that one component is attached to another component through an intermediate component. Features described in one embodiment herein may be applied to another embodiment alone or in combination with other features, unless the feature is not applicable or otherwise stated in that other embodiment.

[0188] The present invention has been described by the above embodiments, but it should be understood that the above embodiments are only for illustrative and explanatory purposes and are not intended to limit the present invention to the scope of the described embodiments. Those skilled in the art can understand that more variations and modifications can be made according to the teachings of the present invention, and these variations and modifications all fall within the scope of protection required by the present invention.

Claims

1. A display panel, characterized in that, Comprising: An array substrate; A light-emitting layer disposed on the array substrate, the light-emitting layer comprising a plurality of light-emitting elements arranged in an array, the light-emitting element comprising an epitaxial layer and a color conversion layer, the epitaxial layer comprising a first semiconductor layer, a quantum well light-emitting layer, and a second semiconductor layer stacked; A first electrode disposed on a side of the first semiconductor layer and a second electrode disposed on a side of the second semiconductor layer; Wherein, the color conversion layer comprises a first color conversion layer disposed on a side of the epitaxial layer close to the first semiconductor layer, at least one first opening exposing the first semiconductor layer is provided on the first color conversion layer, and the first electrode contacts the first semiconductor layer through the first opening; And / or The color conversion layer comprises a second color conversion layer disposed on a side of the epitaxial layer close to the second semiconductor layer, at least one second opening exposing the second semiconductor layer is provided on the second color conversion layer, and the second electrode contacts the second semiconductor layer through the second opening.

2. The display panel according to claim 1, characterized in that, The first semiconductor layer is disposed on a side of the quantum well light-emitting layer away from the array substrate, and a plurality of first grooves are spaced on the first semiconductor layer, and the first grooves do not penetrate the first semiconductor layer; The first color conversion layer comprises filling the first grooves and forming the first opening between two adjacent first grooves, and a surface of the first color conversion layer on a side away from the second semiconductor layer is flush with a surface of the first semiconductor layer on a side away from the second semiconductor layer.

3. The display panel according to claim 2, characterized in that, The first electrode is disposed on a surface of the first semiconductor layer and the first color conversion layer on a side away from the second semiconductor layer; A gap is provided between the epitaxial layers of adjacent light-emitting elements, and the first electrode is electrically connected to the array substrate through the gap.

4. The display panel according to claim 1, characterized in that, The second semiconductor is disposed on a side of the quantum well light-emitting layer close to the array substrate; The second color conversion layer is disposed on a surface of the first semiconductor layer on a side away from the second semiconductor layer, and at least one of the second openings is provided on the second color conversion layer.

5. The display panel according to claim 4, wherein The second electrode is disposed on a surface of the second color conversion layer on a side away from the second semiconductor layer; A bonding metal layer bonded to the second electrode is provided on the array substrate.

6. The display panel according to claim 1, wherein Further comprising a reflective layer disposed on a surface of the light-emitting layer away from the array substrate, and the first electrode is disposed on a surface of the reflective layer away from the array substrate; A first via exposing the first semiconductor layer is provided on the reflective layer, and the first electrode contacts the first semiconductor layer through the first via.

7. The display panel according to claim 6, wherein, The first electrode comprises a first sub-electrode disposed on a surface of the reflective layer on a side close to the array substrate and a second sub-electrode disposed on a surface of the reflective layer on a side away from the array substrate, and the first sub-electrode contacts the first semiconductor layer; A second via exposing the first sub-electrode is provided on the reflective layer, and the second sub-electrode contacts the first sub-electrode through the second via.

8. The display panel according to claim 7, wherein The first sub - electrode is disposed on the surface of the first semiconductor away from the second semiconductor. A plurality of second grooves are spacedly arranged on the first sub - electrode, and the second grooves extend to the first semiconductor layer and do not penetrate the first semiconductor. The first color conversion layer includes filling the second grooves and forming the first openings between two adjacent second grooves. The surface of the first color conversion layer away from the second semiconductor layer is flush with the surface of the first sub - electrode away from the second semiconductor layer.

9. The display panel according to claim 6, characterized in that, The display panel includes a plurality of sub - pixels, and each sub - pixel is correspondingly arranged with one of the light - emitting elements one by one. The sub - pixels include red sub - pixels, green sub - pixels, and blue sub - pixels. The light - emitting element emits blue light or ultraviolet light.

10. The display panel according to claim 9, wherein The first color conversion layer includes a first color conversion sub - part disposed on the red sub - pixel and a second color conversion sub - part disposed on the green sub - pixel.

11. The display panel according to claim 9, characterized in that, The blue sub - pixel includes a first transparent part disposed on the side of the epitaxial layer close to the first semiconductor layer. At least one third opening exposing the first semiconductor layer is provided on the first transparent part, and the first electrode contacts the first semiconductor layer through the third opening.

12. The display panel according to claim 9, wherein, The second color conversion layer includes a first color conversion sub - part disposed on the red sub - pixel and a second color conversion sub - part disposed on the green sub - pixel.

13. The display panel according to claim 9, wherein The blue sub - pixel includes a second transparent part disposed on the side of the epitaxial layer close to the second semiconductor layer. At least one fourth opening exposing the second semiconductor layer is provided on the second transparent part, and the second electrode contacts the second semiconductor layer through the fourth opening.

14. The display panel according to any one of claims 9-13, characterized in that, The reflective layer includes a first reflective part disposed on the red sub - pixel and a second reflective part disposed on the green sub - pixel. The orthographic projection of the first reflective part on the array substrate at least partially overlaps with the orthographic projection of the red sub - pixel on the array substrate.

15. The display panel according to claim 1, wherein One of the first semiconductor layer and the second semiconductor layer is an N - type GaN layer, and the other is a P - type GaN layer. The first electrode is a transparent electrode, and the second electrode is a reflective electrode.

16. A method for preparing a display panel, characterized in that, Comprising: Forming an epitaxial layer, including: providing a substrate, and sequentially forming a first semiconductor layer, a quantum well light - emitting layer, and a second semiconductor layer on the substrate. Forming a color conversion layer on the epitaxial layer to form a light - emitting element, including: forming a first color conversion layer on the side of the epitaxial layer close to the first semiconductor layer, and at least one first opening exposing the first semiconductor layer is provided on the first color conversion layer; and / or, forming a second color conversion layer on the side of the epitaxial layer close to the second semiconductor layer, and at least one second opening exposing the second semiconductor layer is provided on the second color conversion layer. Forming a first electrode on the side close to the first semiconductor layer and a second electrode on the side close to the second semiconductor layer; wherein, the first electrode contacts the first semiconductor layer through the first opening, and the second electrode contacts the second semiconductor layer through the second opening. Transferring a plurality of the light - emitting elements to an array substrate.

17. The manufacturing method of the display panel according to claim 16, wherein, A first color conversion layer is formed on one side of the epitaxial layer close to the first semiconductor layer. The method includes: After forming a second electrode on one side close to the second semiconductor layer, a sacrificial layer is formed on the surface of the second electrode away from the first semiconductor layer, and the epitaxial layer is transferred to an intermediate substrate through the sacrificial layer; The substrate on the epitaxial layer is removed; The surface of the first semiconductor layer away from the second semiconductor layer is etched to form a plurality of first grooves; The first color conversion layer is formed in the first grooves.

18. The method for manufacturing a display panel according to claim 16, wherein, A second color conversion layer is formed on one side of the epitaxial layer close to the second semiconductor layer. The method includes: The second color conversion layer is formed on the surface of the second semiconductor layer away from the first semiconductor layer; The second color conversion layer is patterned to form at least one second opening.

19. The manufacturing method of the display panel according to claim 17, characterized in that, A plurality of the light-emitting elements are transferred to an array substrate. The method includes: The intermediate substrate and the sacrificial layer are removed to expose the second electrode; An array substrate is provided, and a bonding metal layer bonded to the second electrode is provided on the array substrate; Bonding is performed through the second electrode and the bonding metal layer.

20. A display device, characterized in that, A display panel according to any one of claims 1-15 is included.

Images