Physically unimitable functional element and method for producing same
By introducing physical incommendable functional units with transistor and magnetic tunneling junction structures into IoT devices, and using semiconductor process technology to generate unpredictable identification codes, the problem of high cost of identity stealing and decryption in the encryption method of IoT devices is solved, and high security and low-cost identity verification are achieved.
Patent Information
- Application Number
- CN202410123306.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-01-29
- Publication Date
- 2025-07-29
AI Technical Summary
The encryption methods of traditional IoT devices have problems such as identities that are easily stolen, the loss of key passwords, and the high cost of frequent decryption operations.
Using a physically incommensurable functional unit composed of transistors and magnetic tunneling junction structures, random variables are introduced through semiconductor process technology to generate unpredictable identification codes, and the parallel operation circuit is used to output a unique identity verification code.
Provides high security and low cost authentication, avoids key loss and identity theft, and reduces the power consumption and time cost of decryption operations.
Smart Images
Figure CN120389849A_ABST
Abstract
Description
Technical Field
[0001] The present disclosure relates to a semiconductor device and a manufacturing method thereof, and more particularly to a physically unclonable function (PUF) device and a manufacturing method thereof. Background Art
[0002] With the increasing popularity of the Internet of Things (IoT) technology, various internet-connected devices (e.g., mobile communication devices, sensors installed on devices, and their built-in software) can be interconnected through the Internet, allowing more and more data to be stored and shared in digital form. However, while providing convenience for information integration, it also brings higher security risks. Therefore, the security of internet-connected devices and the networks they connect to are receiving increasing attention.
[0003] Traditional IoT encryption methods use a mathematical model (algorithm) to encode the information or data to be protected into ciphertext. A decryption key, a numeric string, or a password generated by the algorithm is stored in a hardware device. After receiving the ciphertext, the hardware device decodes the data back into plaintext based on the stored decryption key, numeric string, or algorithm. Unauthorized parties cannot guess the correct key, nor can they use a computer to easily calculate or crack the correct decryption key string or password by trying possible combinations.
[0004] However, traditional encryption methods still pose risks of user identity theft, tampering, and key loss. Furthermore, because the key is stored in a hardware device, each key multiplication and addition operation requires frequent and repeated access to the hardware device's memory, incurring significant additional operational costs (power and time consumption).
[0005] Therefore, there is a need to provide an advanced physically non-copyable functional element and a manufacturing method thereof to solve the problems faced by the prior art. Summary of the Invention
[0006] According to an embodiment of the present specification, a physically unclonable function element is disclosed. This physically unclonable function element includes N physically unclonable function units (hereinafter referred to as PUF units) and an operation circuit. Each PUF unit is substantially composed of a transistor, a first magnetic tunneling junction (MTJ) structure component (hereinafter referred to as the MTJ structure component) and a second MTJ structure component. The first MTJ structure component and the second MTJ structure component are connected in parallel to the drain of the transistor; and at least one of the first MTJ structure component and the second MTJ structure component has a collapsed magnetic tunneling oxide layer. The operation circuit is electrically connected to the N PUF units, and is used to read a set of conduction states of the N PUF units by using at least one reading order, and output a set of values according to this set of conduction states. Where N is a positive integer greater than two.
[0007] According to another embodiment of the present specification, a method for manufacturing a physically unclonable function element is disclosed, including the following steps: First, N PUF units are formed, and each PUF unit is substantially composed of a transistor, a first MTJ structure component and a second MTJ structure component, wherein the first MTJ structure component and the second MTJ structure component are connected in parallel to the drain of the transistor. Then, an operation circuit is formed and electrically connected to the N PUF units. Then, a write voltage is applied to the N PUF units through the operation circuit, so that at least one of the first MTJ structure component and the second MTJ structure component has a collapsed magnetic tunneling oxide layer. Where N is a positive integer greater than two.
[0008] According to the above embodiments, the present specification provides a physically unclonable function element and a manufacturing method thereof. This physically unclonable function element includes N PUF units and an operation circuit. Where N is a positive integer greater than two. Each PUF unit is substantially composed of a transistor and two MTJ structure components connected in parallel to the drain of the transistor. By using random variables in semiconductor manufacturing processes, physical properties or process variation characteristics that cannot be predicted, controlled, and replicated are generated in the magnetic tunneling oxide layer of at least one of the two MTJ structure components (for example, making the magnetic tunneling junction structure that should originally be in an insulating state have a collapsed state), which is used as the unique identification code for verifying the identity of the element. And it can provide more combinations of identity identification codes than the known technology.
[0009] When a hardware device built with this physically unclonable function element receives an external ciphertext encrypted with this identification code, it can be verified according to this identification code, and then the external ciphertext can be decoded and translated back into plaintext, which can prevent the loss of keys and prevent the identity and digital data content of users from being stolen and tampered with, thereby reducing the risk of system security.
[0010] Moreover, since the identification code provided by the physically unclonable function element is a native key directly generated in hardware by introducing random variables through fabrication variations, the entropy source for decryption and the native key can both be prepared within microseconds (micro-sec) without the need for additional software support. This also eliminates the additional operation (power consumption and detection time) costs required by known technologies to frequently and repeatedly access the decryption key from storage hardware devices, and it is relatively easy to integrate the physically unclonable function element into a chip. BRIEF DESCRIPTION OF THE DRAWINGS
[0011] To better understand the above and other aspects of this specification, the following specific embodiments are given and described in detail in conjunction with the accompanying drawings:
[0012] Figure 1A FIG. is a structural configuration diagram of a physically unclonable function element according to an embodiment of this specification;
[0013] Figure 1B is according to Figure 1A a structural cross-sectional schematic diagram of an MTJ structural component shown for the physically unclonable function element;
[0014] Figure 2 FIG. is a structural configuration diagram of another physically unclonable function element shown according to another embodiment of this specification;
[0015] Figure 3 FIG. shows a binary matrix diagram of a physically unclonable function element according to an embodiment of this specification; and
[0016] Figure 4 FIG. shows a ternary matrix diagram of a physically unclonable function element shown according to another embodiment of this specification.
[0017] SYMBOL DESCRIPTION
[0018] 100: Physically unclonable function element
[0019] 101 - 104: PUF cells
[0020] 101R - 104R: First MTJ structural component
[0021] 101L - 104L: Second MTJ structural component
[0022] 101S: PUF cell string
[0023] 105: Operation circuit
[0024] 200: Physically Unclonable Function Element
[0025] 200M: Magnetoresistive Random Access Memory Cell Array (Matrix) Structure
[0026] 201 - 204, 211 - 214, 221 - 224, 231 - 234: PUF Cells
[0027] 201S, 211S, 221S, 231S: PUF Cell Strings
[0028] 205: Operating Circuit
[0029] 205R: Column Decoder
[0030] 205C: Row Decoder
[0031] BL, BL1 - BL4: Bit Lines
[0032] BLB: Inverted Phase Line
[0033] E1: Lower Electrode Layer
[0034] M1: First Magnetic Layer
[0035] MO: Magnetic Tunnel Oxide Layer
[0036] M2: Second Magnetic Layer
[0037] E2: Upper Electrode Layer
[0038] WL1 - WL4: Word Lines
[0039] SL1 - SL4: Source Lines
[0040] T1 - T4: Transistors
[0041] Vr: Read Voltage
[0042] Vp: Write Voltage Detailed Implementation Manner
[0043] This specification provides a physically unclonable function element and its manufacturing method, which can prevent the loss of keys and the risk of the user's identity and digital data content being stolen or tampered with; it also eliminates the additional operating (power consumption and detection time) costs required for repeatedly accessing decryption keys in hardware devices. At the same time, it can provide a higher information security density and level than the known technology in components of the same size. To make the above embodiments and other purposes, features, and advantages of this specification more obvious and understandable, multiple embodiments are specifically given below and detailed descriptions are provided in conjunction with the accompanying drawings.
[0044] It should be noted, however, that these specific implementation cases and methods are not intended to limit the present invention. The present invention can still be implemented using other features, elements, methods, and parameters. The presentation of the preferred embodiments is only used to illustrate the technical features of the present invention and is not intended to limit the claims of the present invention. Those skilled in the art will be able to make equivalent modifications and variations within the spirit of the present invention based on the following description of the specification. In different embodiments and drawings, the same elements will be denoted by the same element symbols.
[0045] Please refer to Figure 1A , Figure 1A FIG. [X] is a structural configuration diagram of a physically unclonable function element 100 according to an embodiment of this specification. In some embodiments of this specification, the physically unclonable function element 100 includes N PUF units (for example, PUF units 101-104) and an operation circuit 105. Wherein, N is a positive integer greater than two.
[0046] In this embodiment, the physically unclonable function element 100 may include a PUF unit string 101S composed of 4 PUF units 101-104 (but not limited thereto). The operation circuit 105 is electrically connected to each of the PUF units 101-104 through a bit line BL, an inverted bit line BLB, a plurality of word lines WL1-WL4, and a plurality of source lines SL1-SL4.
[0047] Each PUF unit (for example, one of the PUF units 101-104) is substantially composed of a transistor (for example, one of the transistors T1-T4), a first MTJ structure component (for example, one of the first MTJ structure components 101R-104R), and a second MTJ structure component (for example, one of the second MTJ structure components 101L-104L) (but not limited thereto, for example, it may still include more active / passive components), which is a magnetic random access memory (MRAM) unit.
[0048] For example, please refer to Figure 1B , Figure 1B is according to Figure 1AA schematic cross-sectional view of an MTJ structure component (e.g., the first MTJ structure component 101R) depicted by the physically unclonable function element 100. In this embodiment, the MTJ structure component of each PUF unit in the physically unclonable function element 100 (e.g., the first MTJ structure component 101L of the PUF unit 103) includes a lower electrode layer E1, a first magnetic layer M1, a magnetic tunneling oxide layer MO, a second magnetic layer M2, and an upper electrode layer E2 stacked in sequence, and the three together form a vertical MTJ structure.
[0049] In some embodiments of this specification, the materials constituting the first magnetic layer M1 and the second magnetic layer M2 may include an iron-containing magnetic material, such as cobalt iron boron (CoFeB). And the material constituting the magnetic tunneling oxide layer MO may include magnesium oxide (MgO), amorphous aluminum oxide (AIO x ), amorphous hafnium oxide (HfO x ) or any combination of the above. The conductive material constituting the upper electrode layer E2 may include (but is not limited to) ruthenium, tantalum, platinum, copper (Cu), gold (Au), aluminum (Al), or any combination of the above. The material constituting the lower electrode layer 101E1 may include one of tantalum (Ta), tungsten (W), platinum (pt), cobalt (Co), ruthenium (Ru), or a combination of the above.
[0050] In this embodiment, both the first magnetic layer M1 and the second magnetic layer M2 of the first magnetic layer M1 are cobalt iron boron layers. The material constituting the magnetic tunneling oxide layer MO preferably includes magnesium oxide. The upper electrode layer E2 may be a laminate composed of tantalum metal and ruthenium metal. The lower electrode layer E1 may be a tungsten metal layer. And there is perpendicular magnetic anisotropy (PMA) between the first magnetic layer M1 and the second magnetic layer M2. Among them, the second magnetic layer M2 includes a ferromagnetic material (also known as the pinned layer) whose magnetic orientation has been fixed or pinned and is not easily flipped by an external magnetic field. The first magnetic layer M1 includes a ferromagnetic material that is not fixed or pinned in a specific magnetic orientation, and its magnetic direction can be rotated during subsequent writing (programing process) (also known as the free layer (pinned layer)).
[0051] When the operation circuit 105 applies a read voltage Vr through the bit line BL, the anti-phase line BLB, the word line WL1, and the source line SL1 to select and turn on the transistor T1 to read the magnetization orientations of both the first magnetic layer M1 and the second magnetic layer M2, if the magnetization orientations of both the first magnetic layer M1 and the second magnetic layer M2 are in the parallel direction (parallel to the perpendicular magnetic tunneling junction direction), the perpendicular resistance between them is very small. If the magnetization orientations of both the first magnetic layer M1 and the second magnetic layer M2 are in the anti-parallel direction AP (anti-parallel to the perpendicular magnetic tunneling junction direction), the perpendicular resistance between them is very large.
[0052] Please refer to again Figure 1A , one end of each word line (for example, one of the word lines WL1 - WL4) is electrically connected to the operation circuit 105, and the other end is electrically connected to the gate of the transistor (for example, one corresponding to the transistors T1 - T4) of the corresponding PUF unit (for example, one corresponding to the PUF units 101 - 104). Each source line (for example, one of the source lines SL1 - SL4) is electrically connected to the source of the transistor (for example, one corresponding to the transistors T1 - T4) corresponding to each PUF unit 101 - 104. The bit line BL is electrically connected to the second MTJ structure components 101L - 104L of each PUF unit 101 - 104. The anti-phase line BLB is electrically connected to the first MTJ structure components 101R - 104R of each PUF unit 101 - 104.
[0053] Taking the PUF unit 101 as an example, one end (for example, the upper electrode layer 101E2) of its first MTJ structure component 101R is electrically connected to the drain of the transistor T1, and the other end (for example, the lower electrode layer E1) is electrically connected to the anti-phase line BLB. One end (for example, the upper electrode layer E2) of the second MTJ structure component 101L is electrically connected to the drain of the transistor T1, and the other end (for example, the lower electrode layer E1) is electrically connected to the bit line BL. And both the first MTJ structure component 101R and the second MTJ structure component 101L are electrically connected to the drain of the transistor T1 in parallel with each other.
[0054] Although the above physical unclonable function element 100 can be fabricated by existing semiconductor manufacturing process technologies. However, during the manufacturing process, random variables can be introduced into the manufacturing process by adjusting parameters in the manufacturing process, such as deposition temperature, thermal budget, types of reaction gases, flow rates... etc., so that there are obvious material or structural substantial differences between the magnetic tunneling oxide layers MO of the first MTJ structure components 101R - 104R and the second MTJ structure components 101L - 104L in each PUF unit 101 - 104 of the physical unclonable function element 100.
[0055] When the operation circuit 105 applies a relatively high-level programming voltage Vp to each PUF cell 101-104, at least one of the first MTJ structure components 101R and the second MTJ structure components 101L in each PUF cell (e.g., PUF cell 101) will have the magnetic tunneling oxide layer MO of at least one of them in a breakdown state because it cannot withstand the high voltage.
[0056] For example, in this embodiment, the step of applying the write voltage Vp includes: applying a turn-on voltage to the gates of the transistors T1-T4 in each PUF cell 101-104 through the word source lines WL1-WL4, so that a high voltage difference is generated between the source lines SL1-SL4 and the drains of each corresponding transistor T1-T4. This causes the magnetic tunneling oxide layer MO of at least one of the first tunneling junction structure components 101R-104R and the second MTJ structure components 101L-104L (e.g., the first tunneling junction structure component 101R) to be in a breakdown state. Thus, the first MTJ structure component 101R with the magnetic tunneling oxide layer MO in the breakdown state exhibits a permanently electrically conductive state. Regardless of whether the magnetization orientation written to the first tunneling junction structure component 101R is in the parallel direction or the antiparallel direction, its perpendicular resistance reading is close to 0. In other words, the first tunneling junction structure component 101R with the magnetic tunneling oxide layer MO in the breakdown state can be regarded as a failed component.
[0057] Subsequently, when the operation circuit 105 applies a read voltage Vr through the bit lines BL, the anti-phase lines BLB, the word lines WL1-WL4, and the source lines SL1-SL4, and selects to turn on the transistors T1-T4 to read the magnetization orientations (and perpendicular resistance readings) of the first tunneling junction structure components 101R-104R and the second MTJ structure components 101L-104L of each PUF cell 101-104, a set of values can be obtained and output according to the turn-on sequence of the transistors T1-T4 and the group conduction states of the first tunneling junction structure components 101R-104R and the second MTJ structure components 101L-104L, which is used as the unique identification code for verifying the identity of the component.
[0058] In some embodiments of this specification, the operation circuit 105 can control the level and / or pulse time of the write voltage Vp applied to each PUF cell 101-104, so that only one of the first MTJ structure components 101R-104R and the second MTJ structure components 101L-104L in each PUF cell 101-104 fails due to the magnetic tunneling oxide layer MO being in a breakdown state. For example, in this embodiment, only the first MTJ structure components 101R and 102R are failed components in the PUF cells 101 and 102; only the second MTJ structure components 103L and 104L are failed components in the PUF cells 103 and 104.
[0059] The PUF cells 101 and 102 of the first MTJ structural elements 101R and 102R in a failed state (indicated by R:×) and the second MTJ structural elements 101L and 102L in a normal state (indicated by L:0) are respectively assigned a state value of 1 (R:× / L:0=1). The PUF cells 103 and 104 of the second MTJ structural elements 103L and 104L in a failed state (indicated by L:×) and the first MTJ structural elements 103R and 104R in a normal state (indicated by R:0) are respectively assigned a state value of 0 (R:0 / L:×=0). Based on the forward reading order of the PUF cells 101-104, the PUF cell string 101S of the physically unclonable functional element 100 can obtain and output a state sequence of 1, 1, 0, 0 (as described in Table 1).
[0060] Table 1
[0061]
[0062]
[0063] In this embodiment, since the state value obtained and output by each PUF unit 101-104 is a binary code of 0 or 1, each state sequence has 2 N In this embodiment, the physically un-clonable functional element 100 has four PUF units 101-104 (ie, N=4), and each state sequence can have 16 (2 4 ) combinations. If we also consider the variations in the reading order of the four PUF units 101-104, we can obtain 24 (4! = 4×3×2×1) reading orders. In other words, the non-clonable functional element 100 can provide 384 (16×24) combinations of binary code sequences (excluding repeated sequences) that can be used as a unique identification code to verify the identity of the physical non-clonable functional element 100.
[0064] In addition, in some other embodiments of the present specification, the write voltage Vp level and / or pulse duration applied by the operating circuit 105 to each PUF unit 101-104 can be controlled to allow one of the first MTJ structure component 101R-104R and the second MTJ structure component 101L-104L in each PUF unit 101-104 to fail due to the breakdown of its magnetic tunneling oxide layer MO, or both to fail completely.
[0065] For example, in this embodiment, by adjusting the level and / or pulse time of the write voltage Vp, only the first MTJ structural element 101R in the PUF unit 101 can be made a failed component; both the first MTJ structural element 102R and the second MTJ structural element 102L in the PUF unit 102 can be made completely failed; and only the second MTJ structural elements 103L and 104L in the PUF units 103 and 104 can be made failed components.
[0066] The PUF unit 101 having a failed first MTJ structure component 101R (represented by R:×) and a normal second MTJ structure component 101L (represented by L:O) is given a state value of 1 (R:× / L:O=1); the PUF unit 102 having a failed state (represented by R:×) and a failed state (represented by L:×) of the first MTJ structure component 102R is given a state value of X (R:× / L:×=X); the PUF units 103 and 104 having a failed state (represented by L:×) and the first MTJ structure components 103R and 104R are given a state value of 0 (R:O / L:×=0), respectively. According to the forward reading order of the PUF units 101 - 104 , the PUF unit string 101S of the physically unclonable functional element 100 can obtain and output a state sequence of 1, X, 0, 0 (as described in Table 2).
[0067] Table 2
[0068]
[0069]
[0070] Since the state sequence obtained and output by each PUF unit 101-104 is a ternary code of 0, 1 or X, each state sequence has 3 N In this embodiment, each state sequence of the physically non-copyable functional element 100 may have 81 (3 4 Considering the 24 (4! = 4 × 3 × 2 × 1) read sequences of the four PUF units 101-104, the non-clonable functional element 100 can provide 1,944 (81 × 24) combinations of binary code sequences (excluding repeated sequences) that can be used as unique identification codes to verify the identity of the physical non-clonable functional element 100.
[0071] Compared with the physical unclonable function element composed of only 8 magnetoresistive random access memories, the state value of each magnetoresistive random access memory is a binary code of 0 or 1, which can only provide 256 (2 8 ) combinations of binary code sequences. The physical unclonable function element 100 described in the embodiment of the present application can obviously provide more (384 or 1,944) identification code combinations.
[0072] It should be noted that the structure of the physical unclonable function element 200 is not limited to a single PUF unit string 101S. For example, please refer to Figure 2 , Figure 2 which is a structural configuration diagram of another physical unclonable function element 200 illustrated according to another embodiment of this specification. In this embodiment, the physical unclonable function element 200 can be a magnetoresistive random access memory cell array (matrix) structure 200M including multiple unit strings (for example, 4 PUF unit strings 201S, 211S, 221S, and 231S).
[0073] Among them, each PUF unit string 201S, 211S, 221S, and 231S includes four PUF units 201-204, 211-214, 221-224, and 231-234. The operation circuit 205 of the physical unclonable function element 200 further includes a column decoder 205R and a row decoder 205C. Among them, the row decoder 205C is electrically connected to the PUF unit strings 201S, 211S, 221S, and 231S through word lines WL1-WL4 respectively; the column decoder 205R is electrically connected to the PUF unit strings 201S, 211S, 221S, and 231S through bit lines BL1-BL4 respectively. Since the structure and connection method of each PUF unit string 201S, 211S, 221S, and 231S are roughly similar to those of the PUF unit string 101S, they will not be elaborated here.
[0074] In some embodiments of this specification, the write voltage Vp level and / or pulse time applied by the operation circuit 205 to each of the PUF units 201-204, 211-214, 221-224, and 231-234 can be controlled such that only one of the first MTJ structure component and the second MTJ structure component in each of the PUF units 201-204, 211-214, 221-224, and 231-234 fails due to the magnetic tunneling oxide layer MO presenting a breakdown state; thereby causing the state value output by each of the PUF units 201-204, 211-214, 221-224, and 231-234 to be a binary code of 0 or 1. In other words, the physical unclonable function element 200 can provide a 4×4 binary code array (matrix) diagram with 2 16 combinations (without considering duplicate arrays) (as Figure 3 illustrated), which is used as the unique identification code for verifying the identity of the physical unclonable function element 200.
[0075] In some other embodiments of this specification, the write voltage Vp level and / or pulse time applied by the operation circuit 205 to each of the PUF units 201-204, 211-214, 221-224, and 231-234 can be controlled such that one of the first MTJ structure component and the second MTJ structure component in each of the PUF units 201-204, 211-214, 221-224, and 231-234 fails due to the magnetic tunneling oxide layer MO presenting a breakdown state, or both fail; thereby causing the state value output by each of the PUF units 201-204, 211-214, 221-224, and 231-234 to be a ternary code of 0 or 1 or X.
[0076] In other words, the physical unclonable function element 200 can provide a 4×4 ternary code array (matrix) diagram with 3 16 combinations (without considering duplicate arrays) (as Figure 4 illustrated), which is used as the unique identification code for verifying the identity of the physical unclonable function element 200. Compared with the physical unclonable function element composed of 8 magnetoresistive random access memories alone and the aforementioned physical unclonable function element 100, the physical unclonable function element 200 can provide more combinations of identity identification codes.
[0077] When a hardware device (not shown) built with this physical unclonable function element 100 and 200 receives an external ciphertext encrypted with this identification code, it can be verified according to this unique identification and the external ciphertext can be decoded into plaintext, which can prevent the risk of key loss and the theft and tampering of user identity and digital data content.
[0078] If the (serial) matrix scale of the physically unclonable function elements 100 and 200 is increased, more combinations of identification codes, more complex Challenge-Response Pairs (CRPs), and more combinations of random numbers can be provided, thereby improving the unpredictability of the original key, preventing hackers from destroying the trusted foundation, and thus providing better anti-hacker attack and password cracking prevention capabilities.
[0079] In addition, as mentioned above, the physically unclonable function elements 100 and 200 described in the embodiments of the present application can provide more identification code combinations and higher information security density and level on the premise of having the same number of magnetoresistive random access memory elements. In other words, under the same information security level, the size of the physically unclonable function elements 100 and 200 can be reduced by reducing the number of PUF units in the physically unclonable function elements 100 and 200, making the circuit containing the physically unclonable function elements 100 and 200 relatively easier to be designed into the chip.
[0080] Also, since the identification codes provided by the physically unclonable function elements 100 and 200 can be directly generated by the original key of the hardware, without additional software support, the additional operation costs required to store the decryption key in the known technology in the hardware device frequently are also eliminated. Also, since the entropy source of the identification code and the original key can be prepared within microseconds without additional software support, the additional operation (power consumption and detection time) costs required to frequently and repeatedly access the decryption key from the storage hardware device in the known technology can be eliminated.
[0081] Although the present invention has been disclosed above with preferred embodiments, it is not intended to limit the present invention. Those skilled in the art can make some changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the scope defined by the appended claims.
Claims
1. A physically unclonable function element, comprising: N physically unclonable function units, each of the N physically unclonable function units being substantially composed of a transistor, a first magnetic tunneling junction (MTJ) structure component, and a second magnetic tunneling junction structure component, wherein the first magnetic tunneling junction structure component and the second magnetic tunneling junction structure component are connected in parallel to the drain of the transistor; and at least one of the first magnetic tunneling junction structure component and the second magnetic tunneling junction structure component has a breakdown state magnetic tunneling oxide layer; and An operation circuit, electrically connected to the N physically unclonable function units, for reading a set of conduction states of the N physically unclonable function units by using at least one reading sequence and outputting a set of values according to the set of conduction states; where N is a positive integer greater than two.
2. The physically unclonable function element according to claim 1, wherein the first magnetic tunneling junction structure component and the second magnetic tunneling junction structure component include: a fixed ferromagnetic layer, a free ferromagnetic layer, and the magnetic tunneling oxide layer oxygen located between the fixed ferromagnetic layer and the free ferromagnetic layer.
3. The physically unclonable function element according to claim 1, wherein the fixed ferromagnetic layer and the free ferromagnetic layer include cobalt iron boron (CoFeB); the magnetic tunneling oxide layer includes magnesium oxide (MgO).
4. The physically unclonable function element according to claim 1, wherein only the first magnetic tunneling junction structure component has the breakdown state magnetic tunneling oxide layer.
5. The physically unclonable function element according to claim 1, wherein both the first magnetic tunneling junction structure component and the second magnetic tunneling junction structure component have the breakdown state magnetic tunneling oxide layer.
6. The physically unclonable function element according to claim 1, wherein the N physically unclonable function units are included in a unit array.
7. The physically unclonable function element according to claim 1, wherein the N physically unclonable function units form a unit array, and the operation circuit includes a column decoder and a row decoder.
8. The physically unclonable function element according to claim 7, wherein the operation circuit further includes: A word line, one end electrically connected to the row decoder and the other end electrically connected to the gate of the transistor in each of the N physically unclonable function units; A bit line, one end electrically connected to the column decoder and the other end electrically connected to the first magnetic tunneling junction structure component in each of the N physically unclonable function units; And An anti-phase line (bit line bar, BLB), one end electrically connected to the row decoder and the other end electrically connected to the second magnetic tunneling junction structure component in each of the N physically unclonable function units; And A source line (sourceline, SL), one end connected to a voltage source and the other end electrically connected to the source of the transistor in each of the N physically unclonable function units.
9. The physically non-copyable functional element as described in claim 1, wherein only one of the first magnetic tunneling junction structure component and the second magnetic tunneling junction structure component in each of the N physically non-copyable functional units has the magnetic tunneling oxide layer in the collapsed state, so that the set of values has 2N components. 10 . The physically non-clonable functional element as claimed in claim 9 , wherein each of the 2N components comprises a binary code sequence or a binary code array.
11. The physically non-copyable functional element as described in claim 1, wherein any one or both of the first magnetic tunneling junction structure component and the second magnetic tunneling junction structure component in each of the N physically non-copyable functional units has the magnetic tunneling oxide layer in the collapsed state, so that the set of values has 3N components. 12 . The physically non-clonable functional device as claimed in claim 11 , wherein each of the 3N different components comprises a ternary code string or a ternary code array.
13. A method for manufacturing a physically non-imitable functional element, comprising: Form N physically unclonable function units, where each of the N physically unclonable function units is substantially composed of a transistor, a first magnetic tunneling junction structure component, and a second magnetic tunneling junction structure component, and the first magnetic tunneling junction structure component and the second magnetic tunneling junction structure component are connected in parallel to the drain of the transistor; as well as forming an operating circuit electrically connected to the N physically non-copyable functional units; as well as The operating circuit applies a write voltage to the N physically non-copyable functional units, so that at least one of the first magnetic tunneling junction structure component and the second magnetic tunneling junction structure component has a collapsed magnetic tunneling oxide layer; wherein N is a positive integer greater than two.
14. The method for manufacturing a physically non-copyable functional element as claimed in claim 13 , wherein the operating circuit further comprises: a word line having one end electrically connected to the row decoder and one end electrically connected to the gate of the transistor in each of the N physically non-clonable functional units; A bit line, one end of which is electrically connected to the column decoder, and one end of which is electrically connected to the first magnetic tunneling junction structure element in each of the N physically non-cloneable functional units; as well as an inverting bit line, one end of which is electrically connected to the row decoder, and one end of which is electrically connected to the second magnetic tunneling junction structure element in each of the N physically non-cloneable functional units; as well as A source line has one end connected to a voltage source and another end electrically connected to the source of the transistor in each of the N physically non-cloneable functional units.
15. The method for manufacturing a physically non-imitable functional element as described in claim 13, wherein the step of applying the write voltage to the N physically non-imitable functional units comprises: applying a turn-on voltage to the gate of the transistor in each of the N physically non-imitable functional units via the word source line, and applying a high voltage via the source line to cause the magnetic tunneling oxide layer of at least one of the first magnetic tunneling junction structure component and the second magnetic tunneling junction structure component to enter the breakdown state.