Substrate processing apparatus and substrate processing system

Abstract

The present invention provides a substrate processing apparatus capable of executing a substrate transport process, a first ring transport process, and a second ring transport process, in which a substrate lift pin is moved in a longitudinal direction in a state in which the substrate lift pin and a ring lift pin are separated, a substrate is lifted by the substrate lift pin, and the ring lift pin is moved in a longitudinal direction in a state in which the ring lift pin is separated from the substrate lift pin. In a first ring conveying process, a substrate lifting pin and a ring lifting pin are simultaneously moved in the longitudinal direction in a state in which the substrate lifting pin and the ring lifting pin are connected, and a first ring is lifted by an upper portion of the ring lifting pin, and in a second ring conveying process, a second ring is lifted by a lower portion of the ring lifting pin. In a state in which the substrate lifting pin and the ring lifting pin are connected, the substrate lifting pin and the ring lifting pin are moved in the longitudinal direction at the same time, and the second ring is lifted by the lower portion of the ring lifting pin.

Description

Technical Field

[0001] The present invention relates to a substrate processing apparatus and a substrate processing system. Background Art

[0002] Patent Document 1 discloses a plasma processing apparatus including a wafer mounting surface for mounting a wafer, an annular mounting surface, lift pins, and a drive mechanism. In the plasma processing apparatus disclosed in Patent Document 1, the annular mounting surface is for mounting: a first ring having a first engaging portion; and a second ring having a through hole reaching the lower surface of the first engaging portion. Further, each lift pin has: a first holding portion for engaging with the through hole; and a second holding portion connected in the axial direction of the first holding portion and having a protruding portion protruding from the outer periphery of the first holding portion.

[0003] Prior Art Documents

[0004] Patent Documents

[0005] Patent Document 1: Japanese Unexamined Patent Application Publication No. 2020-113603 Summary of the Invention

[0006] Technical Problem to be Solved by the Invention

[0007] The technology of the present invention provides a plasma processing apparatus capable of raising and lowering a substrate and an annular component on a mounting surface by using a common drive mechanism.

[0008] Means for Solving the Technical Problem

[0009] One aspect of the present invention is a substrate processing apparatus, characterized by comprising: a chamber; a substrate support portion disposed in the chamber, which has a substrate support surface and a ring support surface; a first ring configured to surround a substrate on the substrate support surface; a second ring disposed on the ring support surface, having an inner diameter larger than that of the first ring and an outer diameter larger than that of the first ring, the second ring having an inner annular portion and an outer annular portion, the inner annular portion being capable of supporting the first ring and having a plurality of through holes, the outer annular portion surrounding the first ring supported on the inner annular portion; a plurality of substrate lifting pins disposed below the substrate support surface; a plurality of ring lifting pins disposed below the ring support surface in a manner corresponding to the plurality of substrate lifting pins respectively and matching the plurality of through holes respectively, each ring lifting pin having an upper portion and a lower portion, the upper portion having a first width smaller than the through hole, and the lower portion having a second width larger than the through hole; at least one actuator capable of moving the plurality of substrate lifting pins longitudinally; at least one connection and separation mechanism capable of switching the connection state and the separation state between the substrate lifting pins and the corresponding ring lifting pins; and a control unit capable of controlling such that the substrate processing apparatus executes a substrate transfer process, a first ring transfer process, and a second ring transfer process, the substrate transfer process including: a step of lifting the substrate on the substrate support surface by the plurality of substrate lifting pins by moving the plurality of substrate lifting pins longitudinally in the separation state, the first ring transfer process including: a step of lifting the first ring by the upper portion of each of the plurality of ring lifting pins by moving the plurality of substrate lifting pins and the plurality of ring lifting pins simultaneously longitudinally in the connection state, and the second ring transfer process including: a step of lifting the second ring by the lower portion of each of the plurality of ring lifting pins by moving the plurality of substrate lifting pins and the plurality of ring lifting pins simultaneously longitudinally in the connection state.

[0010] Advantages of the Invention

[0011] By adopting the present invention, a plasma processing apparatus capable of lifting a substrate and a ring assembly on a placement surface by using a shared drive mechanism can be provided. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 It is a schematic explanatory diagram showing the outline of the structure of a plasma processing system.

[0013] Figure 2 It is a schematic explanatory diagram showing the outline of the structure of a transfer device.

[0014] Figure 3It is a longitudinal sectional view showing an outline of the structure of a plasma processing apparatus according to an embodiment.

[0015] Figure 4 It is Figure 3 a partial enlarged view.

[0016] Figure 5 It is an explanatory view showing the relationship between the lifting pins for the ring and the through holes.

[0017] Figure 6 It is a front view showing an outline of the structure of the connection / separation mechanism.

[0018] Figure 7 It is a longitudinal sectional view showing another structural example of the connection / separation mechanism.

[0019] Figure 8 It is an explanatory view showing the state of the substrate transfer process.

[0020] Figure 9 It is an explanatory view showing the state of the edge ring transfer process.

[0021] Figure 10 It is an explanatory view showing the state of the cover ring transfer process.

[0022] Figure 11 It is a front view showing another structural example of the connection / separation mechanism.

[0023] Figure 12 It is a perspective view showing another structural example of the connection / separation mechanism.

[0024] Figure 13 It is a plan view showing the relationship between the lifting pins and the transfer picker.

[0025] Figure 14 It is a plan view showing the relationship between the lifting pins and the transfer picker. Detailed Embodiment

[0026] In a manufacturing process of semiconductor devices and the like, plasma processing such as etching using plasma is performed on a semiconductor substrate (hereinafter simply referred to as "substrate"). The plasma processing is performed in a state where the substrate is placed on a substrate support portion disposed in a processing container capable of reducing pressure.

[0027] In order to obtain good and uniform processing results in the central portion and the peripheral portion of a substrate during plasma processing, the substrate support portion includes a plurality of annular members arranged so as to surround the periphery of the substrate on the placement surface. The plurality of annular members include an edge ring arranged adjacent to the substrate on the placement surface, and a cover ring arranged so as to cover the outer side surface of the edge ring. These annular members are consumed due to being exposed to plasma, and thus need to be replaced regularly. The replacement of the annular members is performed, for example, using a lift that can lift and lower in a state of supporting the annular members and a transfer mechanism that can transfer the annular members.

[0028] Here, in a conventional plasma processing apparatus, a drive mechanism for a substrate lift used in the transfer of a substrate from inside the processing chamber and a drive mechanism for an annular member lift used in the replacement of the annular members are separately and independently arranged. Therefore, there is room for improvement from the viewpoints of space constraints and cost. Moreover, in the plasma processing apparatus disclosed in Patent Document 1, although it is disclosed that a ring assembly as a consumable component is lifted and transferred using lift pins, there is no mention of the relationship with the lift pins for the substrate.

[0029] The technology of the present invention has been completed in view of the above circumstances, and provides a plasma processing apparatus capable of lifting a substrate and a ring assembly on a placement surface using a common drive mechanism. Hereinafter, a plasma processing system as a substrate processing system including the substrate processing apparatus of the present embodiment will be described with reference to the drawings. In addition, in this specification and the drawings, for elements having substantially the same functional configuration, repeated description is omitted by assigning the same reference numerals.

[0030] <Plasma Processing System>

[0031] In one embodiment, as Figure 1 shown, the plasma processing system includes a plasma processing apparatus 1, a transfer apparatus 2, and a control unit 3. The plasma processing system is an example of a substrate processing system, and the plasma processing apparatus 1 is an example of a substrate processing apparatus. The plasma processing apparatus 1 includes a plasma processing chamber 10, a substrate support portion 11, and a plasma generation portion 12. The plasma processing chamber 10 has a plasma processing space. In addition, the plasma processing chamber 10 has: at least one gas supply port for supplying at least one processing gas to the plasma processing space; and at least one gas discharge port for discharging gas from the plasma processing space. The gas supply port is connected to a gas supply portion 20 described later, and the gas discharge port is connected to an exhaust system 40 described later. The substrate support portion 11 is arranged in the plasma processing space and has a substrate support surface for supporting a substrate. A wafer is an example of a substrate.

[0032] The plasma generation unit 12 can generate plasma from at least one process gas supplied into the plasma processing space. The plasma formed in the plasma processing space can be capacitively coupled plasma (CCP), inductively coupled plasma (ICP), ECR plasma (Electron-Cyclotron-Resonance Plasma), helicon wave plasma (HWP), surface wave plasma (SWP), etc. In addition, various types of plasma generation units including an AC (Alternating Current) plasma generation unit and a DC (Direct Current) plasma generation unit can also be used. In one embodiment, the AC signal (AC electric power) used in the AC plasma generation unit has a frequency in the range of 100 kHz to 10 GHz. Therefore, the AC signal includes RF (Radio Frequency) signals and microwave signals. In one embodiment, the RF signal has a frequency in the range of 100 kHz to 150 MHz.

[0033] In one example, the transfer device 2 has a transfer chamber 2a, a transfer picker 2b, and a plurality of transfer arms 2c. The transfer chamber 2a has a substrate transfer space, and the transfer picker 2b and the plurality of transfer arms 2c are disposed inside. The transfer chamber 2a is configured to be adjacent to the plasma processing chamber 10 of the plasma processing device 1 and can communicate with the inside (plasma processing space) of the plasma processing chamber 10. The transfer picker 2b, also referred to as an end effector, can hold and transfer the substrate W and the ring assembly 120 described later. As Figure 2 shown, the transfer picker 2b has a substantially U-shaped configuration in a top view and is rotatably connected to the front transfer arm 2c among the plurality of transfer arms 2c. The plurality of transfer arms 2c have a link arm structure that is rotatably connected to each other. Moreover, the transfer device 2 can transfer the substrate W and the ring assembly 120, for example, between the outside of the plasma processing device 1 and the substrate support portion 11 disposed inside the plasma processing device 1.

[0034] In addition, in the technology of the present invention, the above-mentioned transfer picker 2b and transfer arms 2c are sometimes collectively referred to as a "transfer robot". That is, a transfer robot is disposed inside the transfer chamber 2a.

[0035] The control unit 3 can process computer-executable commands for causing the plasma processing apparatus 1 and the transfer apparatus 2 to execute various steps described in the present invention. The control unit 3 can control each element of the plasma processing apparatus 1 and the transfer apparatus 2 to execute various steps described herein. In one embodiment, part or all of the control unit 3 may be included in the plasma processing apparatus 1. The control unit 3 may include a processing unit 3a1, a storage unit 3a2, and a communication interface 3a3. The control unit 3 can be implemented by a computer 3a, for example. The processing unit 3a1 can perform various control operations by reading a program from the storage unit 3a2 and executing the read program. The program may be pre-stored in the storage unit 3a2 or may be acquired via a medium when needed. The acquired program is stored in the storage unit 3a2 and read and executed by the processing unit 3a1 from the storage unit 3a2. The medium may be various storage media readable by the computer 3a or a communication line connected to the communication interface 3a3. The processing unit 3a1 may be a CPU (Central Processing Unit). The storage unit 3a2 may include a RAM (Random Access Memory), a ROM (Read Only Memory), an HDD (Hard Disk Drive), an SSD (Solid State Drive), or a combination thereof. The communication interface 3a3 can communicate with the plasma processing apparatus 1 via a communication line such as a LAN (Local Area Network). In addition, the above storage medium may be temporary or non-temporary.

[0036] <Plasma Processing Apparatus>

[0037] Next, as an example of the above-described plasma processing apparatus 1, a structural example of a capacitively coupled plasma processing apparatus 1 will be described. Figure 3 is a longitudinal sectional view showing an outline of the structure of the plasma processing apparatus 1. Figure 4 is to Figure 3 a partial enlarged view showing an enlarged part of the structure of the substrate support portion 11 shown.

[0038] The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply 30, and an exhaust system 40. In addition, the plasma processing apparatus 1 includes a substrate support unit 11 and a gas introduction unit. The gas introduction unit can introduce at least one processing gas into the plasma processing chamber 10. The gas introduction unit includes a shower head 13. The substrate support unit 11 is disposed in the plasma processing chamber 10. The shower head 13 is disposed above the substrate support unit 11. In one embodiment, the shower head 13 forms at least a part of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the shower head 13, the side wall 10a of the plasma processing chamber 10, and the substrate support unit 11. The plasma processing chamber 10 is grounded. The shower head 13 and the substrate support unit 11 are electrically insulated from the housing of the plasma processing chamber 10.

[0039] The substrate support unit 11 includes a main body portion 110, a ring assembly 120, and a lifter 130. The main body portion 110 has a central region 110a for supporting a substrate W and a ring-shaped region 110b for supporting the ring assembly 120. The ring-shaped region 110b of the main body portion 110 surrounds the central region 110a of the main body portion 110 in a plan view. The substrate W is disposed on the central region 110a of the main body portion 110, and the ring assembly 120 is disposed on the ring-shaped region 110b of the main body portion 110 so as to surround the substrate W on the central region 110a of the main body portion 110. Therefore, the central region 110a is also referred to as a substrate support surface for supporting the substrate W, and the ring-shaped region 110b is also referred to as a ring support surface for supporting the ring assembly 120.

[0040] As Figure 4 shown, in one embodiment, the main body portion 110 includes a base 111, an electrostatic chuck 112, and an insulator 113.

[0041] The base 111 includes a conductive member. The conductive member of the base 111 can function as a lower electrode. The electrostatic chuck 112 is disposed on the base 111. The electrostatic chuck 112 includes a ceramic member 112a and an electrostatic electrode 112b disposed within the ceramic member 112a. The ceramic member 112a has a central region 110a. In one embodiment, the ceramic member 112a also has a ring-shaped region 110b. In addition, instead of the ceramic member 112a having a ring-shaped region 110b, other members such as a ring-shaped electrostatic chuck or a ring-shaped insulating member that surrounds the electrostatic chuck 112 (central region 110a) may have a ring-shaped region 110b. The ring assembly 120 may be disposed above the ring-shaped electrostatic chuck or the ring-shaped insulating member, or may be disposed above both the electrostatic chuck 112 and the ring-shaped insulating member.

[0042] In addition, at least one RF / DC electrode coupled to the RF power supply 31 and / or the DC power supply 32 described later can be disposed within the ceramic component 112a. In this case, the at least one RF / DC electrode functions as a lower electrode. When a bias RF signal and / or a DC signal described later is supplied to the at least one RF / DC electrode, the RF / DC electrode is also referred to as a bias electrode. Further, it may be that the conductive component of the susceptor 111 and the at least one RF / DC electrode function as a plurality of lower electrodes. Further, it may be that the electrostatic electrode 112b functions as a lower electrode. Accordingly, the substrate support portion 11 includes at least one lower electrode.

[0043] In addition, in each of the susceptor 111 and the electrostatic chuck 112, a plurality of, in this embodiment, three through holes 111h and 112h that penetrate in the thickness direction in a portion corresponding to the annular region 110b (ring support surface), and a plurality of, in this embodiment, three through holes 111g and 112g that penetrate in the thickness direction in a portion corresponding to the central region 110a (substrate support surface) are respectively formed. As Figure 4 shown, the ring lifting pins 131 of the lifter 130 described later can be inserted through the through holes 111h and 112h. As Figure 4 shown, the substrate lifting pins 132 of the lifter 130 described later can be inserted through the through holes 111g and 112g.

[0044] The insulator 113 is a cylindrical component formed of ceramics or the like and is used to support the susceptor 111 and the electrostatic chuck 112. The insulator 113 is formed, for example, to have an outer diameter equal to the outer diameter of the susceptor 111 and can support the peripheral portion of the susceptor 111 from below. In addition, the lower end of the insulator 113 is fastened to the lower surface (so-called base plate) of the plasma processing chamber 10.

[0045] The ring assembly 120 includes a plurality of annular components. As Figure 4 shown as an example in, the ring assembly 120 includes a cover ring 121 and an edge ring 122 as the plurality of annular components. The cover ring 121 and the edge ring 122 are stacked in sequence and are supported on the annular region 110b (ring support surface). In addition, the ring assembly 120 can be lifted from the annular region 110b (ring support surface) by the operation of the elevator 130, so that it can be transferred between the transfer picker 2b of the transfer device 2 disposed outside the plasma processing apparatus 1.

[0046] The cover ring 121 as the second ring is made of an insulating material such as quartz, for example. A step is formed on the upper portion of the cover ring 121, and the upper surface of the outer peripheral portion of the cover ring 121 is formed higher than the upper surface of the inner peripheral portion.

[0047] The inner diameter of the inner annular portion that covers the inner peripheral portion of the cover ring 121 is formed to be larger than the inner diameter of the edge ring 122, and the upper surface of this inner annular portion constitutes the support surface of the edge ring 122. Further, in the inner annular portion that is the inner peripheral portion of the cover ring 121, a plurality of, in this embodiment, three through holes 121h that penetrate in the thickness direction are formed. The through holes 121h are formed at positions corresponding to the through holes 111h and 112h formed in the base 111 and the electrostatic chuck 112, as Figure 4 shown, the first pin portion 131a of the ring lifting pin 131 described later can be inserted through the through hole 121h. The through hole 121h has at least a smaller diameter than the through holes 111h and 112h.

[0048] Therefore, the inner annular portion of the second ring 121 has an inner diameter larger than the inner diameter of the first ring 122, and a plurality of through holes 121h that penetrate in the thickness direction are formed, and can support the first ring 122 from below.

[0049] The outer annular portion that is the outer peripheral portion of the cover ring 121 has a larger thickness than the inner annular portion. Further, the outer diameter of the outer annular portion is formed to be larger than the outer diameter of the edge ring 122, and the outer annular portion is arranged so as to surround the periphery of the edge ring 122 supported by the inner annular portion.

[0050] Therefore, the outer annular portion of the second ring 121 has an outer diameter larger than the outer diameter of the first ring 122, is formed with a thickness larger than the inner annular portion, and is arranged so as to surround the edge ring 122.

[0051] The edge ring 122 as the first ring is sometimes also referred to as a focus ring, and is supported on the inner annular portion of the cover ring 121 so as to surround the periphery of the substrate W on the central region 110a, and can improve the in-plane uniformity of the plasma processing of the substrate W. The edge ring 122 can be formed of a conductive material such as silicon, silicon carbide, or quartz. Further, as Figure 4 shown, a plurality of, in this embodiment, three recesses 122h are formed on the bottom surface of the edge ring 122. The recesses 122h are formed at positions corresponding to the through holes 121h formed in the cover ring 121, and the front end portion of the first pin portion 131a of the ring lifting pin 131 inserted through the through hole 121h can contact the recesses 122h.

[0052] In one embodiment, in the plasma processing apparatus 1, corresponding to the through holes (111h and 111g) formed in the main body portion 110 of the substrate support portion 11, a plurality of, in this embodiment, three lifters 130 are arranged. Each lifter 130 includes: three ring lifter pins 131 corresponding to the through holes 111h, 112h formed in the annular region 110b (ring support surface) and the through holes 121h and recesses 122h of the ring assembly 120; and three substrate lifter pins 132 corresponding to the through holes 111g, 112g formed in the central region 110a (substrate support surface). In addition, each lifter 130 includes: an actuator 133 as a drive mechanism capable of moving the ring lifter pins 131 and the substrate lifter pins 132 longitudinally; a connection / disconnection mechanism 134 capable of switching the connection state / disconnection state between the ring lifter pins 131 and the substrate lifter pins 132; and a sealing portion 135.

[0053] The ring lifter pin 131 includes a plurality of pin portions with different diameters. As Figure 4 shown as an example, the ring lifter pin 131 includes a first pin portion 131a and a second pin portion 131b as the plurality of pin portions. The first pin portion 131a and the second pin portion 131b are connected in the axial direction and configured as an integral body.

[0054] The first pin portion 131a as the upper side portion has a first width W1 (refer to Figure 5 ) that is at least smaller than the width W3 of the through hole 121h formed in the covering ring 121 (refer to Figure 5 ). The first pin portion 131a is connected axially from the upper surface of the second pin portion 131b and can move integrally with the second pin portion 131b longitudinally (axially) by the operation of the actuator 133. Moreover, the first pin portion 131a can project into and out of the upper surface of the inner annular portion of the covering ring 121 via the through hole 121h, and thereby can support the lower surface of the edge ring 122 supported by the upper surface of the covering ring 121, more specifically, the recess 122h and move it longitudinally (lift it).

[0055] The second pin portion 131b as the lower side portion has a second width W2 (refer to Figure 5 ) that is at least larger than the width W3 of the through hole 121h formed in the covering ring 121. That is, the second pin portion 131b has a stepped portion S that projects radially outward from the outer periphery of the first pin portion 131a on the upper surface. Moreover, the second pin portion 131b can support the lower surface of the through hole 121h (the lower surface of the covering ring 121) by using the stepped portion S, and thereby can support the lower surface of the covering ring 121 and move it longitudinally (lift it).

[0056] As Figure 4As shown, the lower end of the second pin portion 131b is supported by the retainer 145.

[0057] The actuator 133 can at least move the substrate lifting pin 132 axially (longitudinally) to lift and lower the substrate W on the electrostatic chuck 112. Thereby, the substrate W is moved to the transfer height (hereinafter simply referred to as "transfer height") at which it can be transferred between the transfer picker 2b of the transfer device 2. An example of the actuator includes an electric actuator, a cylinder, a motor, etc. In one embodiment, as Figure 3 shown, the actuator 133 is arranged outside the plasma processing chamber 10.

[0058] In addition, when the ring lifting pin 131 and the substrate lifting pin 132 are in a connected state by the connection and separation mechanism 134 described later, the actuator 133 can move the ring lifting pin 131 and the substrate lifting pin 132 integrally axially (longitudinally) to lift and lower the ring assembly 120 on the electrostatic chuck 112. Thereby, the cover ring 121 or the edge ring 122 is moved to the transfer height at which it can be transferred between the transfer picker 2b of the transfer device 2.

[0059] In one embodiment, the connection and separation mechanism 134 has: an expansion and contraction member 140 that can be connected to the substrate lifting pin 132, more specifically, to the actuator 133; and a cylinder 141 that is arranged to be connectable to the ring lifting pin 131.

[0060] As Figure 6 shown, the expansion and contraction member 140 is, for example, a balloon that can be repeatedly expanded / contracted by injecting / discharging air from the air supply source 142 via the three-way valve 143. In one example, the expansion and contraction member 140 is made of an elastic member such as rubber. The expansion and contraction member 140 is arranged inside the cylinder 141 in the standby state (the state at the lowest position) of the substrate lifting pin 132. Then, the expansion and contraction member 140 can expand by injecting air from the air supply source 142, press and hold the inner wall surface of the cylinder 141 to be integrated with the cylinder 141 (connected state). In addition, the expansion and contraction member 140 can contract by discharging air using the function of the three-way valve 143 to disengage from the inner wall surface of the cylinder 141 and release the holding (separated state).

[0061] In addition, as described above, the expansion and contraction member 140 is arranged to be connected to the substrate lifting pin 132 (actuator 133) and can move integrally with the substrate lifting pin 132 longitudinally by the action of the actuator 133.

[0062] The cylinder block 141 is disposed in a state of being connected to the ring lifting pin 131 via the holding member 145. When the cylinder block 141 is in a connected state due to the expansion of the expansion and contraction member 140, it moves integrally with the expansion and contraction member 140 in the longitudinal direction by the operation of the actuator 133. When it is in a separated state due to the contraction of the expansion and contraction member 140, it does not move in the longitudinal direction by the operation of the actuator 133 but remains at the standby position.

[0063] In other words, in the plasma processing apparatus 1 of the present embodiment, when the expansion and contraction member 140 and the cylinder block 141 are in a connected state, the lifter 130 can move the substrate lifting pin 132 and the ring lifting pin 131 integrally in the longitudinal direction by the operation of the actuator 133. On the other hand, when the expansion and contraction member 140 and the cylinder block 141 are in a separated state, only the substrate lifting pin 132 can move in the longitudinal direction.

[0064] In addition, the number of the actuators 133 and the connection and separation mechanisms 134 disposed in the lifter 130 is not particularly limited. That is, for example, one actuator 133 may be used to move a plurality of ring lifting pins 131 and substrate lifting pins 132 integrally in the longitudinal direction. In this case, for example, as Figure 7 shown, a plurality of ring lifting pins 131 are integrally formed by a ring-shaped member 136 at the lower part of the second pin portion 131b, and a plurality of substrate lifting pins 132 are integrally formed by a ring-shaped member 137 at the lower part.

[0065] Moreover, in this case, as Figure 7 shown, by connecting the cylinder block 141 to the ring-shaped member 136 and connecting the expansion and contraction member 140 to the ring-shaped member 137, the connection state and the separation state between the ring-shaped member 136 (ring lifting pin 131) and the ring-shaped member 137 (substrate lifting pin 132) can be switched by the expansion and contraction of the expansion and contraction member 140. That is, all of the plurality of ring lifting pins 131 and substrate lifting pins 132 can be moved in the longitudinal direction by one actuator 133.

[0066] In addition, the arrangements of the expansion and contraction member 140 and the cylinder block 141 are not limited to the illustrated example.

[0067] As Figure 4 shown, a seal portion 135 is provided in the through holes 111h, 111g to prevent the communication between the upper space (plasma processing space 10s) as a vacuum atmosphere and the lower space (below the substrate support portion 11) as an atmospheric pressure atmosphere. The seal portion 135 is, for example, a shaft seal or a bellows.

[0068] The substrate support portion 11 may include a temperature adjustment module for adjusting at least one of the electrostatic chuck 112, the ring assembly 120, and the substrate W to a target temperature. The temperature adjustment module may include a heater, a heat transfer medium, a flow path, or a combination thereof. A heat transfer fluid such as brine or gas may flow in the flow path. In one embodiment, the flow path is formed in the base 111, and one or more heaters are disposed in the ceramic member 112a of the electrostatic chuck 112. Additionally, the substrate support portion 11 may include a heat transfer gas supply portion for supplying a heat transfer gas (backside gas) to the gap between the back surface of the substrate W and the upper surface of the electrostatic chuck 112.

[0069] Return to Figure 3 the description of.

[0070] The showerhead 13 can introduce at least one processing gas from the gas supply unit 20 into the plasma processing space 10s. The showerhead 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and a plurality of gas introduction ports 13c. The processing gas supplied from the gas supply unit 20 to the gas supply port 13a can be introduced into the plasma processing space 10s from the plurality of gas introduction ports 13c through the gas diffusion chamber 13b. Additionally, the showerhead 13 includes at least one upper electrode. Furthermore, the gas introduction unit may include, in addition to the showerhead 13, one or more side gas injectors (SGI) installed in one or more openings formed in the side wall 10a.

[0071] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 can supply at least one processing gas from the respective corresponding gas source 21 to the showerhead 13 via the respective corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Moreover, the gas supply unit 20 may include at least one flow modulation device for modulating or pulsing the flow rate of at least one processing gas.

[0072] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 can supply at least one RF signal (RF electric power) to at least one lower electrode and / or at least one upper electrode. Thereby, plasma can be formed from at least one processing gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least a part of the plasma generation unit 12. Additionally, by supplying a bias RF signal to at least one lower electrode, a bias potential can be generated on the substrate W to attract the ion component in the formed plasma to the substrate W.

[0073] In one embodiment, the RF power supply 31 includes a first RF generation unit 31a and a second RF generation unit 31b. The first RF generation unit 31a is coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit, and is capable of generating a source RF signal (source RF electric power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, it may be that the first RF generation unit 31a is capable of generating a plurality of source RF signals having different frequencies. The one or more generated source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0074] The second RF generation unit 31b is coupled to at least one lower electrode via at least one impedance matching circuit, and is capable of generating a bias RF signal (bias RF electric power). The frequency of the bias RF signal may be the same as the frequency of the source RF signal or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, it may be that the second RF generation unit 31b is capable of generating a plurality of bias RF signals having different frequencies. The one or more generated bias RF signals are supplied to at least one lower electrode. Additionally, in various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0075] Additionally, the power supply 30 may include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generation unit 32a and a second DC generation unit 32b. In one embodiment, the first DC generation unit 32a is connected to at least one lower electrode and is capable of generating a first DC signal. The generated first DC signal is applied to at least one lower electrode. In one embodiment, the second DC generation unit 32b is connected to at least one upper electrode and is capable of generating a second DC signal. The generated second DC signal is applied to at least one upper electrode.

[0076] In various embodiments, the first DC signal and the second DC signal may be pulsed. In this case, a sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulses may have a pulse waveform in the shape of a rectangle, trapezoid, triangle, or a combination thereof. In one embodiment, a waveform generation unit for generating a sequence of voltage pulses from a DC signal is connected between the first DC generation unit 32a and at least one lower electrode. Thus, the first DC generation unit 32a and the waveform generation unit constitute a voltage pulse generation unit. In the case where the second DC generation unit 32b and the waveform generation unit constitute a voltage pulse generation unit, the voltage pulse generation unit is connected to at least one upper electrode. The voltage pulses may have a positive polarity or a negative polarity. Additionally, the sequence of voltage pulses may include one or more positive-polarity voltage pulses and one or more negative-polarity voltage pulses within one cycle. Further, it may be that in addition to the RF power supply 31, the first DC generation unit 32a and the second DC generation unit 32b are provided, or it may be that the first DC generation unit 32a is provided in place of the second RF generation unit 31b.

[0077] The exhaust system 40 can be connected, for example, to the gas discharge port 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The internal pressure of the plasma processing space 10s can be regulated using the pressure regulating valve. The vacuum pump may include a turbo molecular pump, a dry pump, or a combination thereof.

[0078] Above, various exemplary embodiments have been described, but are not limited to the above-described exemplary embodiments, and various additions, omissions, substitutions, and changes can be made. Additionally, elements in different embodiments can be combined to form other embodiments.

[0079] <Transport operation of the lifter 130>

[0080] Next, a substrate transfer process, a first ring transfer process, and a second ring transfer process, which are transfer operations of the substrate W and the ring assembly 120 performed using the lifter 130, will be described. The operation of the lifter 130 for performing various transfer processes is, as an example, performed under the control of the control unit 3.

[0081] (1) Substrate transfer process

[0082] First, the transfer operation of the substrate W relative to the substrate support portion 11 will be described.

[0083] When the substrate W placed on the central region 110a of the substrate support portion 11 is sent out from the plasma processing chamber 10, first, as Figure 8As shown in (a) thereof, air is discharged from the expansion and contraction member 140, and the expansion and contraction member 140 and the cylinder block 141 are in a separated state.

[0084] Next, the actuator 133 is driven so that the substrate lifting pin 132 rises longitudinally (axially) from the standby position. At this time, since the expansion and contraction member 140 and the cylinder block 141 are in a separated state, the substrate lifting pin 132 and the ring lifting pin 131 rise independently. Thus, the substrate W on the central region 110a is transferred to the substrate lifting pin 132. As shown in Figure 8 (b) thereof, the substrate W is lifted to the transfer height H1. The transfer height H1 is the height at which the transfer pick-up device 2b does not interfere with the transfer object (substrate W or ring assembly 120) supported by the lifter 130 when the transfer pick-up device 2b is inserted and removed between the upper surface of the substrate support portion 11 and the transfer object.

[0085] When the substrate W is lifted to the transfer height, thereafter, the transfer pick-up device 2b of the transfer device 2 is inserted below the substrate W supported by the substrate lifting pin 132. Furthermore, as shown in Figure 8 (c) thereof, the substrate lifting pin 132 is lowered by driving the actuator 133, and thus the substrate W is transferred from the substrate lifting pin 132 to the transfer pick-up device 2b.

[0086] The substrate W transferred to the transfer pick-up device 2b is then transferred from the plasma processing chamber 10 to the transfer chamber 2a.

[0087] On the other hand, when the substrate W is fed into the plasma processing chamber 10 and placed on the central region 110a of the substrate support portion 11, a process opposite to the action shown in Figure 8 is performed.

[0088] That is, after the transfer pick-up device 2b holding the substrate W enters the plasma processing chamber 10, the substrate lifting pin 132 is raised to receive the substrate W on the transfer pick-up device 2b ( Figure 8 (c) thereof). Thereafter, after the transfer pick-up device 2b is retracted, the substrate lifting pin 132 is lowered, and thus the substrate W is placed on the central region 110a ( Figure 8 (b) thereof). At this time, it is preferable that the expansion and contraction member 140 and the cylinder block 141 are in a separated state ( Figure 8 (a) thereof).

[0089] (2) Edge ring 122 (first ring) transfer process

[0090] Next, the transfer operation of the edge ring 122 relative to the substrate support portion 11 will be described.

[0091] When the edge ring 122 placed on the inner circumferential portion of the cover ring 121 in the circumferential region 110b of the substrate support portion 11 is sent out from the plasma processing chamber 10, first, as shown in Figure 9 (a) of FIG. Figure 9 , air is injected into the expansion / contraction member 140 to bring the expansion / contraction member 140 into a connected state with the cylinder block 141.

[0092] Next, the actuator 133 is driven so that the substrate lifting pin 132 rises in the longitudinal direction (axial direction) from the standby position. At this time, since the expansion / contraction member 140 is in a connected state with the cylinder block 141, the ring lifting pin 131 and the substrate lifting pin 132 rise integrally in the longitudinal direction from the standby position. Further, at this time, the first pin portion 131a of the ring lifting pin 131 has a first width W1 smaller than the through-hole 121h formed in the cover ring 121. Therefore, the edge ring 122 is transferred to the first pin portion 131a of the ring lifting pin 131 via the through-hole 121h. As shown in Figure 9 (b) of FIG. Figure 9 , the edge ring 122 is lifted to the transfer height H1.

[0093] When the edge ring 122 is lifted to the transfer height, thereafter, the transfer picker 2b of the transfer device 2 is inserted below the edge ring 122 supported by the first pin portion 131a of the ring lifting pin 131. Further, as shown in Figure 9 (c) of FIG. Figure 9 , the ring lifting pin 131 is lowered by driving the actuator 133, so that the edge ring 122 is transferred from the ring lifting pin 131 to the transfer picker 2b.

[0094] The edge ring 122 transferred to the transfer picker 2b is then transported from the plasma processing chamber 10 to the transfer chamber 2a.

[0095] Here, when the edge ring 122 is supported by the first pin portion 131a of the ring lifting pin 131, there is a case where the cover ring 121 is supported and lifted by the step portion S of the second pin portion 131b due to the difference in the length L1 of the first pin portion 131a (refer to Figure 9 (b) of FIG. Figure 9 ). Therefore, when the interval between the lower surface of the edge ring 122 supported by the first pin portion 131a and the upper surface of the cover ring 121 supported by the second pin portion 131b is small, there is a possibility that the transfer picker 2b may interfere with the cover ring 121 and the edge ring 122 may not be properly transferred.

[0096] Therefore, the length L1 of the first pin portion 131a that defines the interval between the lower surface of the edge ring 122 and the upper surface of the cover ring 121 is at least greater than the total thickness L2 of the transfer picker 2b and the cover ring 121 (refer to Figure 9(c)), and in order to efficiently convey the subsequent covering ring 121, it is preferable to set the difference from the above-mentioned total thickness L2 as small as possible. However, this is not limited thereto as long as there is no interference between the conveying picker 2b and the covering ring 121 even when the covering ring 121 is held at the stepped portion S.

[0097] In addition, when feeding the edge ring 122 into the plasma processing chamber 10 and placing it on the annular region 110b of the substrate support portion 11, it is necessary to perform a process opposite to the Figure 9 shown operation. However, it is preferable to feed the edge ring 122 integrally with the covering ring 121 constituting the ring assembly 120.

[0098] (3) Conveying process of the covering ring 121 (second ring)

[0099] Finally, the conveying operation of the covering ring 121 relative to the substrate support portion 11 will be described.

[0100] When sending out the covering ring 121 placed on the annular region 110b of the substrate support portion 11 from the plasma processing chamber 10, first, as Figure 10 (a) shown, air is injected into the expansion and contraction member 140 to make the expansion and contraction member 140 and the cylinder block 141 in a connected state.

[0101] Next, the actuator 133 is driven so that the substrate lifting pin 132 rises longitudinally (axially) from the standby position. At this time, since the expansion and contraction member 140 and the cylinder block 141 are in a connected state, the ring lifting pin 131 and the substrate lifting pin 132 rise integrally from the standby position. At this time, the second pin portion 131b of the ring lifting pin 131 has a second width W2 larger than the through hole 121h formed in the covering ring 121. Therefore, the covering ring 121 is handed over to the second pin portion 131b of the ring lifting pin 131. As Figure 10 (b) shown, the covering ring 121 is lifted to the handover height H1.

[0102] When the covering ring 121 is lifted to the handover height, then, the conveying picker 2b of the conveying device 2 is inserted below the covering ring 121 supported by the second pin portion 131b of the ring lifting pin 131. Furthermore, as Figure 10 (c) shown, the ring lifting pin 131 is lowered by driving the actuator 133, so that the covering ring 121 is handed over from the ring lifting pin 131 to the conveying picker 2b.

[0103] The covering ring 121 handed over to the conveying picker 2b is then conveyed from the plasma processing chamber 10 to the conveying chamber 2a.

[0104] Here, when the length of the first pin portion 131a of the lifting pin 131 for the ring is set to be larger than the above-described total thickness and the difference from the total thickness is also set to be large, the relative support height of the covering ring 121 in the axial direction of the lifting pin 131 for the ring decreases. Therefore, the rising amplitude of the lifting pin 131 for the ring required to lift the covering ring 121 to the transfer height H1 becomes large, and thus the transfer efficiency of the covering ring 121 decreases.

[0105] In view of this point, the length of the first pin portion 131a is preferably set to have as small a difference as possible from the total thickness L2 as described above.

[0106] In addition, when the covering ring 121 is fed into the plasma processing chamber 10 and placed on the annular region 110b of the substrate support portion 11, it is necessary to perform a process opposite to the Figure 10 shown operation, but it is preferable that the feeding of the covering ring 121 is performed integrally with the edge ring 122 constituting the ring assembly 120.

[0107] Specifically, after the transfer picker 2b holding the ring assembly 120 enters the plasma processing chamber 10, the lifting pin 131 for the ring connected to the lifting pin 132 for the substrate is raised to receive the ring assembly 120 on the transfer picker 2b. At this time, the edge ring 122 is supported by the first pin portion 131a via the through hole 121h of the covering ring 121, and the covering ring 121 is supported by the second pin portion 131b. After that, after the transfer picker 2b is retracted, the lifting pin 131 for the ring is lowered, so that the covering ring 121 and the edge ring 122 are sequentially placed on the annular region 110b.

[0108] The transfer operations of the substrate W and the ring assembly 120 performed by the lifter 130 are controlled as described above.

[0109] As described above, in the plasma processing apparatus 1 of the present embodiment, the lifting pin 132 for the substrate used for lifting the substrate W and the lifting pin 131 for the ring used for lifting the ring assembly 120 can be connected / separated by the connection / separation mechanism 134, so that it is not necessary to independently arrange the actuator 133 for lifting them, the arrangement of other components can be performed (improving the space constraint), and the cost can be reduced. In addition, in the present embodiment, the connection / separation mechanism 134 has a so-called pneumatic chuck structure composed of the expansion / contraction member 140 and the cylinder body 141. Therefore, for miniaturization and weight reduction, it is easy to arrange the components, and the degree of freedom of the chuck clamping portion is high. By setting the mechanical stopper, it is easy to adjust the height of the lifting pin.

[0110] In addition, in the plasma processing apparatus 1 of the present embodiment, as described above, the ring lifting pins 131 and the substrate lifting pins 132 (hereinafter collectively referred to as "lifting pins") are arranged across the sealing portion 135 from the lower portion of the substrate support portion 11 in the atmospheric pressure atmosphere to the plasma processing space 10s in the vacuum atmosphere. Therefore, for example, when a pressure difference is generated inside and outside the plasma processing chamber 10 during plasma processing, a first stress (the vacuum force in the plasma processing chamber 10, which is about 70 [gf] in one example) is caused on the lifting pins in the attracting direction toward the plasma processing chamber 10. In addition, particularly when evacuating the plasma processing space 10s at the start of the plasma processing apparatus 1, a second stress (about 280 [gf] in one example) larger than the first stress (vacuum force) is instantaneously applied.

[0111] Regarding this point, as described above, the substrate lifting pin 132 is connected to the actuator 133, and the actuator 133 is fastened to the bottom surface of the plasma processing chamber 10. Therefore, the self-weight (the weight including the actuator 133) can be used to counteract the above-mentioned first stress and second stress, and the attraction toward the plasma processing chamber 10 can be suppressed.

[0112] On the other hand, regarding the ring lifting pin 131, particularly when it is in a state separated from the substrate lifting pin 132 and is subjected to the first stress or the second stress in the attracting direction, the height of the front end of the pin changes, and it may not be possible to appropriately perform the transfer between the ring assembly 120 and the transfer picker 2b of the transfer device 2.

[0113] Therefore, in the plasma processing apparatus 1 of the technology of the present invention, it is preferable that the ring lifting pin 131 has a weight that is at least not lifted by the vacuum force, that is, the gravitational force exerted by the ring lifting pin 131 due to its self-weight is equal to or greater than the first stress (for example, about 100 g or more). Thus, for example, even when the ring lifting pin 131 is in a separated state from the substrate lifting pin 132 during plasma processing, the attraction of the ring lifting pin 131 caused by the vacuum force can be suppressed.

[0114] The self-weight of the ring lifting pin 131 can be increased, for example, by enlarging the holding member 145 that holds the ring lifting pin 131 or the cylinder 141 connected to the holding member 145, or by forming these holding member 145 or cylinder 141 from a material having weight, such as SUS (stainless steel).

[0115] In addition, in the plasma processing apparatus 1 of the technology of the present invention, in order to counteract the second stress instantaneously received during evacuation when the plasma processing apparatus 1 is started up, the self-weight of the ring lifting pin 131 can be made larger (for example, 300 g or more). Thereby, for example, even when the ring lifting pin 131 is in a separated state from the substrate lifting pin 132 during plasma processing, attraction to the ring lifting pin 131 can be suppressed.

[0116] However, in the case of counteracting the second stress by using the self-weight in this way, there is a possibility that the holding member 145 or the cylinder block 141 may be enlarged due to this. In view of this, for the second stress, instead of counteracting it by using the self-weight, it can be counteracted by integrating with the substrate lifting pin 132 (switching to the connected state).

[0117] Specifically, when the plasma processing apparatus 1 is started up, before evacuation of the plasma processing chamber 10, air is injected into the expansion and contraction member 140 to make the expansion and contraction member 140 and the cylinder block 141 (the ring lifting pin 131 and the substrate lifting pin 132) in a connected state. Thereby, the weight of the substrate lifting pin 132 and the actuator 133 is added to the substantial weight of the ring lifting pin 131, and attraction to the ring lifting pin 131 can be suppressed when the plasma processing apparatus 1 is started up.

[0118] In addition, in the example shown in the above-described embodiment, as described above, the lower part of the ring lifting pin 131 is held by the holding member 145, and the first gravity is counteracted by the weight of the holding member 145. However, in this case, as described above, there is a case where the holding member 145 or the cylinder block 141 needs to be enlarged due to the increase in weight.

[0119] Therefore, in the technology of the present invention, a biasing member can be provided at the lower part of the ring lifting pin 131 in place of the holding member 145.

[0120] Figure 11 It is an explanatory diagram showing an outline of the structure of the connection and separation mechanism 234 of another embodiment.

[0121] As Figure 11 shown, the connection and separation mechanism 234 of another embodiment has a biasing member 245 such as a spring in place of the holding member 145. When the expansion and contraction member 140 and the cylinder block 141 are in a separated state, when only the substrate lifting pin 132 is moved longitudinally, the biasing member 245 can apply a force to the ring lifting pin 131 in the direction opposite to the reaction force direction (opposite side) of the vacuum force in the plasma processing space 10s in the plasma processing chamber 10.

[0122] Moreover, in the connection and separation mechanism 234, when only the substrate lift pin 132 is moved longitudinally as described above, by selecting the biasing member 245 such that the reaction force (spring force) acting on the ring lift pin 131 becomes greater than the vacuum force which is the first stress (for example, 1.0 N or more), even when in a separated state from the substrate lift pin 132 during plasma processing, the attraction of the substrate lift pin 132 caused by the vacuum force can be suppressed.

[0123] In addition, in the above-described embodiment, for example, as Figure 4 shown, the ring lift pin 131, the connection and separation mechanism 134, and the substrate lift pin 132 are illustrated as being arranged in a substantially straight line in a plan view, but the arrangements of these ring lift pin 131, connection and separation mechanism 134, and substrate lift pin 132 are not limited.

[0124] Specifically, for example, as Figure 12 shown, the ring lift pin 131, the connection and separation mechanism 134, and the substrate lift pin 132 may be arranged in a substantially triangular shape in a plan view.

[0125] By arranging the ring lift pin 131, the connection and separation mechanism 134, and the substrate lift pin 132 in a substantially triangular shape as described above, the linear distance between the ring lift pin 131 and the substrate lift pin 132 can be reduced. Therefore, the connection and separation mechanism 134 can be miniaturized, and the component strength can be improved.

[0126] In addition, by reducing the linear distance between the ring lift pin 131 and the substrate lift pin 132 as described above, as Figure 13 shown, the interference between the substrate lift pin 132 and the transfer picker 2b during the transfer of the substrate W and the ring assembly 120 can be suppressed.

[0127] More specifically, in the case where the ring lift pin 131, the connection and separation mechanism 134, and the substrate lift pin 132 are arranged in a substantially straight line in a plan view as described above, compared with the case where they are arranged in a substantially triangular shape in a plan view, the linear distance between the ring lift pin 131 and the substrate lift pin 132 becomes larger. As a result, the substrate lift pin 132 and the transfer picker 2b may interfere longitudinally (overlap in a plan view), and it may become impossible to appropriately transfer the object to be transferred.

[0128] Therefore, in the plasma processing apparatus 1 of the technology of the present invention, by arranging the ring lifting pins 131, the connection and separation mechanism 134, and the substrate lifting pins 132 in a substantially triangular configuration in a plan view, the linear distance between the ring lifting pins 131 and the substrate lifting pins 132 can be reduced. As a result, the connection and separation mechanism 134 can be miniaturized to improve the component strength, and the interference between the substrate lifting pins 132 and the transfer picker 2b can be suppressed.

[0129] In this case, at least two of the multiple, in this embodiment, three substrate lifting pins 132 can be arranged in the outer region A of the U-shaped transfer picker 2b as shown in Figure 13 and at least one can be arranged in the inner region B.

[0130] In addition, from the viewpoint of suppressing the longitudinal interference between the substrate lifting pins 132 and the transfer picker 2b as described above, it can also be as shown in Figure 14 where all of the multiple, in this embodiment, three substrate lifting pins 132 are arranged in the inner region B of the transfer picker 2b.

[0131] However, in this case, when constructing the connection and separation mechanism 134, the linear distance between the ring lifting pins 131 and the substrate lifting pins 132 becomes larger. Therefore, from the viewpoint of miniaturizing the mechanism, it is preferable to arrange at least one or more substrate lifting pins 132 in the outer region A by arranging the ring lifting pins 131, the connection and separation mechanism 134, and the substrate lifting pins 132 in a substantially triangular configuration.

[0132] The embodiments disclosed herein should be considered illustrative rather than restrictive in all respects. The above embodiments can be omitted, replaced, or changed in various ways without departing from the appended claims and their gist. For example, the components of the above embodiments can be arbitrarily combined. From such an arbitrary combination, of course, the functions and effects of each component involved in the combination can be obtained, and other functions and other effects obvious to those skilled in the art according to the description of this specification can also be obtained.

[0133] In addition, the effects described in this specification are merely illustrative or exemplary and not restrictive. That is, the technology of the present invention can achieve the above effects and other effects obvious to those skilled in the art according to the description of this specification, or the technology of the present invention can achieve other effects obvious to those skilled in the art according to the description of this specification instead of the above effects.

[0134] Description of Reference Numerals

[0135] 1 Plasma processing apparatus, 3 Control unit, 10 Plasma processing chamber, 11 Substrate support unit, 110a Central region, 110b Annular region, 121 Cover ring, 121a Through-hole, 122 Edge ring, 131 Lift pin for ring, 131a First pin portion, 131b Second pin portion, 132 Lift pin for substrate, 133 Actuator, 134 Connecting and separating mechanism, H1 Handover height, W Substrate, W1 First width, W2 Second width.

Claims

1. A substrate processing apparatus, characterized in that, Comprising: A chamber; A substrate support portion disposed within the chamber, having a substrate support surface and an annular support surface; A first ring configured to surround a substrate on the substrate support surface; A second ring disposed on the annular support surface, having an inner diameter larger than that of the first ring and an outer diameter larger than that of the first ring. The second ring has an inner annular portion and an outer annular portion. The inner annular portion can support the first ring and has a plurality of through holes, and the outer annular portion surrounds the first ring supported on the inner annular portion; A plurality of substrate lifting pins disposed below the substrate support surface; A plurality of ring lifting pins disposed below the annular support surface in a manner corresponding to the plurality of substrate lifting pins respectively and matching the plurality of through holes respectively. Each ring lifting pin has an upper portion and a lower portion. The upper portion has a first width smaller than that of the through hole, and the lower portion has a second width larger than that of the through hole; At least one actuator capable of moving the plurality of substrate lifting pins longitudinally; At least one connection and separation mechanism capable of switching the connection state and the separation state between the substrate lifting pins and the corresponding ring lifting pins; And A control unit capable of controlling such that the substrate processing apparatus executes a substrate transfer process, a first ring transfer process, and a second ring transfer process, The substrate transfer process includes: a step of lifting the substrate on the substrate support surface by the plurality of substrate lifting pins by moving the plurality of substrate lifting pins longitudinally in the separation state, The first ring transfer process includes: a step of lifting the first ring by the upper portions of the plurality of ring lifting pins respectively by moving the plurality of substrate lifting pins and the plurality of ring lifting pins simultaneously longitudinally in the connection state, The second ring transfer process includes: a step of lifting the second ring by the lower portions of the plurality of ring lifting pins respectively by moving the plurality of substrate lifting pins and the plurality of ring lifting pins simultaneously longitudinally in the connection state.

2. The substrate processing apparatus according to claim 1, wherein: The connection and separation mechanism includes: A cylinder body connected to the ring lifting pin; and An expansion and contraction member connected to the actuator, The expansion and contraction member can form the connection state by expanding within the cylinder body and can form the separation state by contracting within the cylinder body.

3. The substrate processing apparatus according to claim 2, wherein: The cylinder body has a weight that cannot be lifted by the vacuum force within the chamber.

4. The substrate processing apparatus according to claim 3, wherein: The cylinder body is formed of stainless steel.

5. The substrate processing apparatus according to claim 1, wherein: The connection and separation mechanism includes: A cylinder body connected to one of the ring lifting pin and the actuator; and An expansion and contraction member connected to the other of the ring lifting pin and the actuator, The expansion and contraction member can form the connection state by expanding within the cylinder body, and can form the separation state by contracting within the cylinder body.

6. The substrate processing apparatus according to claim 5, wherein: The connection and separation mechanism further includes a biasing member that can bias the ring lifting pins in the direction opposite to the reaction force of the vacuum force within the chamber.

7. The substrate processing apparatus according to any one of claims 1 to 6, wherein: The first ring is formed of a conductive material, and the second ring is formed of an insulating material.

8. A substrate processing apparatus, characterized in that, Comprising: A chamber; A substrate support portion disposed within the chamber, which has a substrate support surface and a ring support surface; An edge ring disposed so as to surround the substrate on the substrate support surface; A plurality of substrate lifting pins disposed below the substrate support surface; A plurality of ring lifting pins disposed below the ring support surface in a manner corresponding to the plurality of substrate lifting pins respectively; At least one actuator capable of moving the plurality of substrate lifting pins longitudinally; At least one connection and separation mechanism capable of switching between a connection state and a separation state between the substrate lifting pins and the corresponding ring lifting pins; And A control unit capable of controlling such that the substrate processing apparatus executes a substrate transfer process and an edge ring transfer process, The substrate transfer process includes: a step of lifting the substrate on the substrate support surface by the plurality of substrate lifting pins by moving the plurality of substrate lifting pins longitudinally in the separation state, The edge ring transfer process includes: a step of lifting the edge ring by the plurality of ring lifting pins by moving the plurality of substrate lifting pins and the plurality of ring lifting pins longitudinally simultaneously in the connection state.

9. The substrate processing apparatus according to claim 8, wherein: The connection and separation mechanism includes: A cylinder body connected to the ring lifting pins; and An expansion and contraction member connected to the actuator, The expansion and contraction member can form the connection state by expanding within the cylinder body, and can form the separation state by contracting within the cylinder body.

10. The substrate processing apparatus according to claim 9, wherein: The cylinder body has a weight that cannot be lifted by the vacuum force within the chamber.

11. The substrate processing apparatus according to claim 10, wherein: The cylinder body is formed of stainless steel.

12. The substrate processing apparatus according to claim 8, wherein: The connection and separation mechanism includes: A cylinder body connected to one of the ring lifting pins and the actuator; and An expansion and contraction member connected to the other of the ring lifting pins and the actuator, The expansion and contraction member can form the connection state by expanding within the cylinder body, and can form the separation state by contracting within the cylinder body.

13. The substrate processing apparatus according to claim 12, wherein: The connection and separation mechanism further includes a biasing member that can bias the ring lifting pins in the direction opposite to the reaction force of the vacuum force within the chamber.

14. A substrate processing system, which is a substrate processing system including a transfer device and a substrate processing device, characterized in that: The transfer device includes: A transfer chamber; and A transfer robot disposed in the transfer chamber and having an end effector, The substrate processing device includes: A substrate processing chamber capable of communicating with the transfer chamber; A substrate support portion disposed in the substrate processing chamber, which has a substrate support surface and an annular support surface; An edge ring disposed so as to surround the substrate on the substrate support surface; A plurality of substrate lifting pins disposed below the substrate support surface; A plurality of annular lifting pins disposed below the annular support surface in a manner corresponding to the plurality of substrate lifting pins respectively; At least one actuator capable of moving the plurality of substrate lifting pins longitudinally; At least one connection and separation mechanism capable of switching the connection state and the separation state between the substrate lifting pins and the corresponding annular lifting pins; and A control unit capable of controlling so that the substrate processing system executes a substrate transfer process and an edge ring transfer process, The substrate transfer process includes: A step of lifting the substrate on the substrate support surface by the plurality of substrate lifting pins by moving the plurality of substrate lifting pins longitudinally in the separation state; A step of receiving the lifted substrate by the end effector; and A step of transferring the substrate received by the end effector from the substrate processing chamber to the transfer chamber, The edge ring transfer process includes: A step of lifting the edge ring by the plurality of annular lifting pins by moving the plurality of substrate lifting pins and the plurality of annular lifting pins longitudinally simultaneously in the connection state; A step of receiving the lifted edge ring by the end effector; and A step of transferring the edge ring received by the end effector from the substrate processing chamber to the transfer chamber.

15. The substrate processing system according to claim 14, characterized in that: The connection and separation mechanism includes: A cylinder body connected to the annular lifting pin; and An expansion and contraction member connected to the actuator, The expansion and contraction member can form the connection state by expanding in the cylinder body and can form the separation state by contracting in the cylinder body.

16. The substrate processing system according to claim 15, characterized in that: The cylinder body has a weight that cannot be lifted by the vacuum force in the substrate processing chamber.

17. The substrate processing system according to claim 16, characterized in that: The cylinder body is formed of stainless steel.

18. The substrate processing system according to any one of claims 14 to 17, characterized in that: The end effector has a U-shaped shape in plan view, The plurality of substrate lifting pins are arranged in the following manner: when the end effector receives the substrate or the edge ring, the plurality of substrate lifting pins are located inside the end effector.

19. The substrate processing system according to any one of claims 14 to 17, characterized in that: The end effector has a U-shaped shape in plan view, The plurality of substrates are arranged by lift pins in such a manner that when the end effector receives the substrate or the edge ring, at least two of the plurality of substrate lift pins are located outside the end effector.

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