Atmospheric pressure low-temperature plasma treatment device

Abstract

The invention discloses an atmospheric pressure low-temperature plasma treatment device, and belongs to the technical field of treatment devices. The device comprises a plasma pen, a main machine and a high-pressure gas storage tank, the plasma pen and the high-pressure gas storage tank are connected to the main machine, a nanosecond pulse boosting unit is arranged in the main machine, and the nanosecond pulse boosting unit comprises a high-voltage pulse circuit. The high-voltage pulse circuit comprises an external power supply, a first capacitor C1, a first inductor L1, a second capacitor C2, a second inductor L2, a transistor M1, a voltage stabilizing diode D1 and a resistor R1. Low-temperature plasma jet is generated by ionizing working gas through high-voltage nanosecond pulses, a nanosecond-level high-voltage generator is directly integrated into the plasma pen, therefore, completely diffused (uniform) plasmas are obtained, and reactive oxygen species (ROS) and reactive nitrogen species (RNS) play a role in sterilization.

Description

Technical Field

[0001] The present invention relates to the technical field of treatment devices, and particularly to an atmospheric pressure low-temperature plasma treatment device. Background Art

[0002] The research on atmospheric pressure low-temperature plasma technology began in the 1990s. With the in-depth understanding of plasma physics and chemistry, this technology has gradually moved from the laboratory to practical applications. Due to the high-temperature limitation, traditional high-temperature plasma technologies (such as arc plasma) are difficult to be applied in fields such as biomedical and material surface treatment. However, low-temperature plasma technology has gradually become a research hotspot due to its low-temperature characteristics, high reactivity, and no chemical residues.

[0003] Early research mainly focused on the generation mechanism and basic characteristics of plasma. Researchers generated low-temperature plasma at atmospheric pressure through different discharge methods (such as dielectric barrier discharge, radio frequency discharge, microwave discharge, etc.) and studied its physical and chemical properties. With the in-depth understanding of plasma characteristics, low-temperature plasma technology has gradually been applied in fields such as material surface modification, biomedicine, and environmental governance. Especially in the biomedical field, low-temperature plasma is used for wound healing, cancer treatment, disinfection and sterilization, etc. In recent years, researchers have been committed to optimizing plasma generation devices, improving their energy efficiency, stability, and controllability, and applying them in industrial, medical, and other fields. At the same time, the integration of plasma technology with other technologies (such as nanotechnology and biotechnology) has also become a research hotspot. Currently, in the existing technology, cold plasma is usually generated by microwave, radio frequency, or DC power supply. Some devices generate low-temperature plasma by exciting gases such as nitrogen and air under normal pressure through an electric field.

[0004] However, there are still some deficiencies in the existing technology when in use. Specifically:

[0005] Dependence on effects: The plasma treatment effect is affected by various factors, including gas type, voltage, frequency, treatment time, environmental conditions such as temperature and humidity. Individual differences of patients, lesion types, lesion locations, etc. may also affect the treatment effect. Therefore, the stability and consistency of treatment results need to be improved.

[0006] Precision and control issues in treatment: Although modern low-temperature plasma devices have certain precise control capabilities, in actual treatment, it is still difficult to precisely adjust each parameter to ensure the best treatment effect. Especially when facing complex lesions, how to ensure the precise action of plasma in a specific lesion area is still a technical challenge.

[0007] Device complexity and cost issues: Current atmospheric pressure low-temperature plasma treatment devices usually require relatively complex equipment and technologies, such as gas supply, plasma generators, power supply systems, etc. This makes the cost of the equipment relatively high. In addition, the maintenance and operation of the equipment also require professional personnel, which limits its popularity in families or small clinics;

[0008] Influence of environmental factors: The generation and stability of low-temperature plasma may be affected by environmental factors (such as temperature, humidity, atmospheric composition, etc.). These factors may lead to unstable treatment effects, causing the performance of the equipment to vary in different environments;

[0009] Low technology popularity: Due to the high cost, complexity of the equipment and the professional requirements for operators, the popularity of low-temperature plasma treatment devices is relatively low. Many small clinics or non-professional medical institutions may not be able to afford the purchase and maintenance costs of such equipment, which limits its wide application. Summary of the Invention

[0010] The purpose of the present invention is to provide an atmospheric pressure low-temperature plasma treatment device. By using high-voltage nanosecond pulses to ionize the working gas (helium / argon) to generate a low-temperature plasma jet, the problems of poor treatment effect and high cost in the prior art are solved.

[0011] The present invention is realized through the following technical solutions:

[0012] The present invention is an atmospheric pressure low-temperature plasma treatment device, including a plasma pen, a mainframe, and a high-pressure gas storage tank. The plasma pen and the high-pressure gas storage tank are connected to the mainframe. A nanosecond pulse boosting unit is arranged inside the mainframe. The nanosecond pulse boosting unit includes a high-voltage pulse circuit. The high-voltage pulse circuit includes: an external power supply, a first capacitor C1, a first inductor L1, a second capacitor C2, a second inductor L2, a transistor M1, a zener diode D1, and a resistor R1.

[0013] The first capacitor C1 is connected in parallel across the external power supply to stabilize the power supply voltage.

[0014] The second inductor L2, the second capacitor C2, the transistor M1, and the branch composed of the zener diode D1 and the resistor R1 form a series LCR resonance circuit.

[0015] Before the pulse is generated, the transistor M1 is in the off state. The second capacitor C2 is charged to the power supply voltage through the resistor R1. A short pulse is applied to the gate of the transistor M1 to turn it on, triggering the second capacitor C2 to discharge forward through the zener diode D1. At the same time, the first inductor L1 and the second inductor L2 start to store energy. When the LCR circuit is in the underdamped state, the current oscillates periodically. After half of the oscillation period T1, the transistor M1 turns off. During the time interval T1, the zener diode D1 conducts forward and injects PN junction charges. During the time interval T2, the transient oscillation of the LCR circuit causes the current to reverse, and the zener diode D1 conducts reversely and depletes the PN junction charges. When the charges return to zero, the diode D1 cuts off and generates a high-voltage pulse due to the self-induction effect.

[0016] The high-voltage pulse generated by the nanosecond pulse boosting unit ionizes the working gas introduced into the plasma pen from the high-pressure gas storage tank to generate a low-temperature plasma jet, which is discharged from one end of the plasma pen.

[0017] Further, the plasma pen includes a stainless-steel housing. An insulating tube is fixed to the inner wall of the stainless-steel housing. A high-voltage pulse tube is fixed in the inner cavity of the insulating tube, and a plasma electrode is installed on the high-voltage pulse tube.

[0018] The plasma pen includes a quartz tube. A stainless-steel upper cover is fixed to the outer wall of the quartz tube. When the stainless-steel upper cover is assembled with the stainless-steel housing, the quartz tube cooperates with the insulating tube. One end of the plasma electrode extends into the inner cavity of the quartz tube. A stainless-steel end cap is provided at one end of the plasma pen away from the stainless-steel upper cover, and a through hole communicating with the insulating tube is opened on the stainless-steel end cap.

[0019] Further, the host is connected to one end of the high-voltage pulse tube passing out of the through hole. A flow control valve is installed on the air outlet pipe of the high-pressure gas storage tank, and an air delivery pipe is fixedly connected to the flow control valve.

[0020] Further, a stainless-steel bellows is fixed to the host. One end of the high-voltage pulse tube passing out of the through hole is located inside the stainless-steel bellows. One end of the stainless-steel bellows is fixed to the stainless-steel end cap and communicates with the through hole on the stainless-steel end cap. One end of the air delivery pipe passes into the stainless-steel bellows and then extends into the insulating tube. One end of the air delivery pipe passes into the host, passes out and then extends into the insulating tube through the stainless-steel bellows.

[0021] Further, when the insulating tube is assembled inside the stainless-steel housing, there is an assembly port between the insulating tube and the stainless-steel housing.

[0022] Further, a sealing ring is sleeved on the assembly port. When the stainless-steel upper cover is connected to the stainless-steel housing, one end of the quartz tube abuts against the sealing ring.

[0023] Further, an opening is provided at one end of the quartz tube away from the stainless-steel housing, and the opening communicates with the inner cavity of the quartz tube.

[0024] Furthermore, the flow control valve is an electric flow control valve, and the gas pipeline is a silicone tube.

[0025] The present invention has the following beneficial effects:

[0026] The present invention generates a low-temperature plasma jet by ionizing a working gas (helium / argon) with a high-voltage nanosecond pulse, and directly integrates a nanosecond-level high-voltage generator into a plasma pen, thus obtaining a fully diffused (uniform) plasma, and the temperature of the plasma flow does not exceed 40 °C. When the plasma jet acts on a human object, it will immediately be affected by the entire complex of chemically active particles, photons, charged particles and electric fields, stimulating eukaryotic cells. Reactive oxygen species (ROS) and reactive nitrogen species (RNS) play a sterilizing role. Specifically, it also has the following advantages:

[0027] High-efficiency sterilization and disinfection effects: Active substances such as free radicals, ozone, and nitrogen oxides generated by low-temperature plasma have strong sterilization capabilities, and can effectively kill various pathogenic microorganisms, including bacteria, viruses, fungi, etc., especially onychomycosis (a skin disease caused by fungi) and bacterial infections in skin diseases. The plasma can effectively destroy the cell walls of pathogens to achieve a therapeutic effect.

[0028] Non-invasive and non-intrusive treatment: Compared with traditional surgical treatment or drug treatment, low-temperature plasma treatment is a non-intrusive treatment method. During the treatment process, there is no need to directly contact the skin or the affected area, reducing the risk of infection and pain. Low-temperature plasma treatment will not cause harm to normal skin tissues because the temperature of the plasma usually remains at a relatively low level and will not cause skin burns or excessive irritation.

[0029] Less irritation to the skin: Atmospheric pressure low-temperature plasma can act gently on the skin and soft tissues during the treatment process, and will not cause discomfort to the skin like high-temperature plasma. The treatment process felt by the patient is relatively comfortable. The low-temperature plasma device can effectively play a therapeutic role without damaging the skin, so it is particularly suitable for long-term treatment needs such as skin diseases, onychomycosis, and wound healing.

[0030] Avoid overuse of drugs: Many skin diseases (such as onychomycosis, skin infections, etc.) usually require long-term drug treatment, and long-term drug use may lead to problems such as side effects and drug resistance. Low-temperature plasma treatment is a drug-independent treatment method, which can reduce the overuse of drugs, thus avoiding the problem of drug resistance.

[0031] Easy to operate and suitable for home use: Low-temperature plasma treatment devices are usually designed as small, portable devices for easy home use. Patients can perform the treatment at home by themselves, without having to go to the hospital or clinic frequently, which is convenient and economical. The device is easy to operate and does not require complex technical support. Patients only need to use it according to the instructions to perform the treatment safely and effectively.

[0032] Scarless treatment: Non-invasive treatment leaves no scars: For skin diseases or wounds, traditional treatment methods may leave scars or pigmentation, while low-temperature plasma treatment can avoid this problem. It can achieve the treatment effect without damaging the skin structure, reducing scars and adverse reactions after treatment.

[0033] Of course, it is not necessary for any product implementing the present invention to achieve all the above-mentioned advantages simultaneously. Description of the Drawings

[0034] Figure 1 It is a schematic structural diagram of the treatment device.

[0035] Figure 2 It is a schematic internal structure diagram of the plasma pen.

[0036] Figure 3 It is a schematic assembly structure diagram of the stainless steel upper cover and the stainless steel end cover.

[0037] Figure 4 It is a schematic principle diagram of the treatment device.

[0038] Figure 5 It is a schematic diagram of the conduction condition of transistor M1 in the treatment device.

[0039] Figure 6 It is a schematic principle diagram of the high-voltage pulse circuit.

[0040] In the figure: 1. Plasma pen; 100. Stainless steel shell; 101. Insulating tube; 102. High-voltage pulse tube; 103. Plasma electrode; 104. Quartz tube; 105. Stainless steel upper cover; 106. Assembly port; 107. Sealing ring; 108. Stainless steel end cover; 2. Main unit; 200. Stainless steel corrugated pipe; 3. High-pressure gas storage tank; 300. Flow control valve. Detailed Embodiments

[0041] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts belong to the scope of protection of the present invention.

[0042] Please refer toFigure 1-6 , the present invention provides a technical solution: an atmospheric pressure low-temperature plasma treatment device, including a plasma pen 1, a mainframe 2, and a high-pressure gas storage tank 3. The plasma pen 1 and the high-pressure gas storage tank 3 are connected to the mainframe 2. A nanosecond pulse boosting unit is provided inside the mainframe 2. The nanosecond pulse boosting unit includes a high-voltage pulse circuit, and the high-voltage pulse circuit includes: an external power supply, a first capacitor C1, a first inductor L1, a second capacitor C2, a second inductor L2, a transistor M1, a zener diode D1, and a resistor R1.

[0043] The first capacitor C1 is connected in parallel across the external power supply to stabilize the power supply voltage.

[0044] The second inductor L2, the second capacitor C2, the transistor M1, and the branch formed by the zener diode D1 and the resistor R1 constitute a series LCR resonance circuit.

[0045] Among them, before the pulse generation starts, the transistor M1 is not conducting (the circuit between the drain terminal and the source terminal is open), and the capacitor C2 is charged to the power supply voltage through the load resistor R1. To start generating nanosecond pulses, a short pulse is applied to the gate of M1 to make it start conducting. Once the transistor M1 starts conducting, two events will occur:

[0046] 1) The capacitor C2 discharges through the forward conduction of D1,

[0047] 2) The inductors L2 and L1 start to accumulate energy.

[0048] If the series LCR circuit composed of L2, C2, M1, and D1 / R1 is underdamped, that is: its total resistance is less than Then the current flowing through L2 is essentially periodic, and the period of this oscillation is equal to

[0049] After approximately half of this oscillation period (after the time interval T1), the transistor M1 stops conducting, as Figure 5 .

[0050] During T1, the D1 diode conducts forward, and charge is injected into its PN junction. For the manifestation of the DSR effect, it is very important that the T1 interval is short enough (hundreds of nanoseconds) so that the injected charge does not reach the other side of the PN junction. During T1, the periodic current flowing through the series LCR circuit reaches its peak and then drops back to zero. At the beginning of T2, due to the transient oscillation of the series RLC circuit, the current flowing through D1 starts to reverse direction, effectively causing D1 to conduct in reverse and gradually depleting the charge injected into its PN junction during T1.

[0051] Starting from T2, the current flowing through L1 converges with the currents flowing through L2, D1, C1, C2, and R1. Once the charge injected into the D1 PN junction drops to zero, the DSR diode suddenly stops conducting at the end of T2. Since this sudden interruption occurs when a non-zero reverse (negative) current flows through D1, L1, L2, C1, C2, and R1, a high-voltage pulse appears across the D1 terminals due to the self-inductance effect. The rise time of this pulse is determined by the inductances L1 and L2 and the reverse capacitance of D1. The energy accumulated in L1 starting from the conduction of M1 and in L2 during the reverse conduction of D1 (T2) is converted into a high electric potential that appears across the reverse capacitance of D1. The peak power of this pulse is approximately equal to the product of the interruption current amplitude, which is determined by the impedance of the relevant components and the reverse capacitance of the DSR diode D1.

[0052] To maximize the effect of the DSR diode, the forward current through the diode should be low and the duration long, while the reverse current should be high and the duration short. If the forward and reverse current waveforms are the same, the DSR diode stops conducting when the current flowing through the diode is zero, and the DSR effect disappears. The optimal operating point of the DSR effect occurs when the DSR diode stops conducting at the peak of its reverse current.

[0053] The high-voltage pulse generated by the nanosecond pulse booster unit ionizes the working gas introduced into the plasma pen 1 from the high-pressure gas storage tank 3 to generate a low-temperature plasma jet, which is discharged from one end of the plasma pen 1.

[0054] The plasma pen 1 includes a stainless-steel housing 100 and a quartz tube 104. An insulating tube 101 is fixed to the inner wall of the stainless-steel housing 100. A high-voltage pulse tube 102 is fixed in the inner cavity of the insulating tube 101. A plasma electrode 103 is installed on the high-voltage pulse tube 102. A stainless-steel upper cover 105 is fixed to the outer wall of the quartz tube 104. When the stainless-steel upper cover 105 is assembled with the stainless-steel housing 100, the quartz tube 104 cooperates with the insulating tube 101. One end of the plasma electrode 103 extends into the inner cavity of the quartz tube 104. A stainless-steel end cap 108 is provided at one end of the plasma pen 1 away from the stainless-steel upper cover 105, and a through hole communicating with the insulating tube 101 is opened on the stainless-steel end cap 108.

[0055] The insulating tube 101 serves as electrical insulation to prevent the high voltage generated by the high-voltage pulse tube 102 from leaking to the stainless-steel housing 100, avoiding the risk of electric shock to the operator, and at the same time providing a relatively stable installation space for the high-voltage pulse tube 102.

[0056] The high-voltage pulse tube 102 converts the electrical energy output by the host 2 into a high-voltage pulse signal and transmits it to the plasma electrode 103, generating a strong electric field around the plasma electrode 103, thereby ionizing the gas to generate plasma.

[0057] The interior of the main unit 2 includes a power boost module, a control unit (such as an MCU), and a nanosecond pulse boost unit, and it has a panel human-machine interface externally. These are technical means well-known in the art. The power boost module converts the externally input low voltage into an adapted voltage to provide a suitable power supply for the subsequent nanosecond pulse boost unit. The control unit is used to control the working parameters of the nanosecond pulse boost unit, such as the frequency, width, amplitude, etc. of the pulse, so as to precisely adjust the high-voltage pulse signal output to the high-voltage pulse tube 102. Through this connection, the main unit 2 can provide the required high-voltage electrical energy for the high-voltage pulse tube 102, enabling it to generate high-voltage pulses that can excite plasma.

[0058] Among them, the inert gas stored in the high-pressure gas storage tank 3 is helium / argon. This device is powered by 24V DC, the pulse width is from 100 ns to 900 ns, the frequency is from 1K to 60K, and the flow rate of the inert gas is from 0.5 to 1 L / min.

[0059] Among them, the main unit 2 is connected to one end of the high-voltage pulse tube 102 that passes through the through-hole. A flow control valve 300 is installed on the air outlet pipe of the high-pressure gas storage tank 3. A gas delivery pipe is fixedly connected to the flow control valve 300. The flow control valve 300 is an electric flow control valve, and the gas delivery pipe is a silica gel tube.

[0060] Among them, a stainless-steel bellows 200 is fixed on the main unit 2. One end of the high-voltage pulse tube 102 passing through the through-hole is located inside the stainless-steel bellows 200. One end of the stainless-steel bellows 200 is fixed on the stainless-steel end cap 108 and is communicated with the through-hole on the stainless-steel end cap 108. One end of the gas delivery pipe passes through the stainless-steel bellows 200 and then extends into the insulating tube 101. One end of the gas delivery pipe passes through the main unit 2 and, after passing through, extends into the insulating tube 101 through the stainless-steel bellows 200.

[0061] Among them, when the insulating tube 101 is assembled inside the stainless-steel housing 100, there is an assembly port 106 between the insulating tube 101 and the stainless-steel housing 100.

[0062] Among them, a sealing ring 107 is sleeved on the assembly port 106. When the stainless-steel upper cover 105 is connected to the stainless-steel housing 100, one end of the quartz tube 104 abuts against the sealing ring 107.

[0063] Among them, an opening is provided at one end of the quartz tube 104 away from the stainless-steel housing 100. The opening is communicated with the inner cavity of the quartz tube 104, and the opening serves as the discharge channel for the ionized plasma.

[0064] In this embodiment, the host 2 is externally connected to a 24V DC power supply. After the host 2 is powered on, the power boost module converts it into an adapted voltage to supply power to the nanosecond pulse boost unit. The control unit (such as an MCU) in the host 2 regulates the nanosecond pulse boost unit, sets the operating parameters with a pulse width ranging from 100 ns to 900 ns and a frequency ranging from 1K to 60K, so as to generate corresponding high-voltage pulse signals.

[0065] High-voltage pulse transmission: The high-voltage pulse signal generated by the host 2 is transmitted through a connecting line to one end of the high-voltage pulse tube 102 that passes through the through-hole of the stainless-steel end cap 108. After receiving the signal, the high-voltage pulse tube 102 further converts the electrical energy into a high-voltage pulse form suitable for exciting the plasma and transmits it to the plasma electrode 103 mounted on itself. During this process, the insulating tube 101 plays an electrical insulation role to prevent the high voltage of the high-voltage pulse tube 102 from leaking to the stainless-steel housing 100, ensuring operational safety.

[0066] Gas delivery: Inert gases such as helium or argon stored in the high-pressure gas storage tank 3 flow through the outlet pipe towards the flow control valve 300 under their own pressure, and then are delivered to the inside of the insulating tube 101 through a silica gel gas delivery pipe passing through the stainless-steel corrugated pipe 200, and finally reach the inner cavity of the quartz tube 104, filling the area around the plasma electrode 103 with the inert gas.

[0067] Plasma generation: When the high-voltage pulse is transmitted to the plasma electrode 103, a strong electric field is formed around the electrode. The inert gas filling the inner cavity of the quartz tube 104 is ionized under the action of the strong electric field. Electrons in the gas molecules gain enough energy to break away from the bondage of the atomic nucleus and become free electrons, while positive ions are generated at the same time, and the gas is ionized to form a plasma containing particles such as electrons, ions, excited atoms and molecules.

[0068] Plasma discharge: The opening at one end of the quartz tube 104 far from the stainless-steel housing 100 is connected to the inner cavity to form a discharge channel. The generated plasma is ejected from this opening under the action of the internal pressure and electric field for therapeutic operations.

[0069] In this embodiment, taking the treatment of onychomycosis as an example for operation description:

[0070] Treatment process: The patient places the hand or foot in the treatment area of the device, ensuring that the onychomycosis is directly under the action of the low-temperature plasma jet, that is, at the opening position. The device generates a high-voltage nanosecond pulse electric field to ionize the gas (such as argon or helium) into plasma, generating active substances such as free radicals, ozone, and nitrogen oxides, which directly act on the nail and nail bed. Each treatment lasts for 5 - 10 minutes, and the treatment is carried out 2 - 3 times a week for 4 - 6 consecutive weeks.

[0071] Effect evaluation: Within 2-3 weeks after treatment, the patient's nails gradually returned to normal, and the symptoms of onychomycosis (such as thickened, discolored, and brittle nails) were significantly alleviated. After treatment, the nail growth rate increased, and new healthy nails gradually replaced the damaged ones, without any side effects such as skin irritation or allergic reactions.

[0072] Treatment effect: Through low-temperature plasma treatment, the symptoms of onychomycosis were significantly reduced, the discolored diseased nails returned to normal, the nail surface was smooth, and the fungal infection was controlled. Compared with traditional drug treatment, patients do not need to rely on antifungal drugs for a long time and do not need to experience possible side effects.

[0073] The preferred embodiments of the present invention disclosed above are only used to help illustrate the present invention. The preferred embodiments do not describe all the details in detail, nor do they limit the invention to the specific embodiments described. Obviously, many modifications and variations can be made according to the content of this specification. These embodiments are selected and specifically described in this specification to better explain the principles and practical applications of the present invention, so that those skilled in the art can well understand and utilize the present invention. The present invention is only limited by the claims and their full scope and equivalents.

Claims

1. An atmospheric pressure low-temperature plasma treatment device, comprising a plasma pen (1), a mainframe (2) and a high-pressure gas storage tank (3). The plasma pen (1) and the high-pressure gas storage tank (3) are connected to the mainframe (2). It is characterized in that: A nanosecond pulse boosting unit is provided inside the mainframe (2). The nanosecond pulse boosting unit includes a high-voltage pulse circuit, and the high-voltage pulse circuit includes: an external power supply, a first capacitor C1, a first inductor L1, a second capacitor C2, a second inductor L2, a transistor M1, a zener diode D1 and a resistor R1; The first capacitor C1 is connected in parallel across the external power supply to stabilize the power supply voltage; The second inductor L2, the second capacitor C2, the transistor M1 and the branch formed by the zener diode D1 and the resistor R1 constitute a series LCR resonant circuit; Among them, before the pulse is generated, the transistor M1 is in the off state, and the second capacitor C2 is charged to the power supply voltage through the resistor R1; A short pulse is applied to the gate of the transistor M1 to make it conduct, triggering the second capacitor C2 to discharge forward through the zener diode D1. At the same time, the first inductor L1 and the second inductor L2 start to store energy; When the LCR circuit is in the underdamped state, the current oscillates periodically. After half of the oscillation period T1, the transistor M1 turns off; Within the time interval T1, the zener diode D1 conducts forward and injects PN junction charges; Within the time interval T2, the transient oscillation of the LCR circuit causes the current to reverse. The zener diode D1 conducts reversely and depletes the PN junction charges. When the charges return to zero, the diode D1 cuts off and generates a high-voltage pulse due to the self-induction effect; The high-voltage pulse generated by the nanosecond pulse boosting unit ionizes the working gas introduced from the high-pressure gas storage tank (3) into the plasma pen (1) to generate a low-temperature plasma jet, which is discharged from one end of the plasma pen (1).

2. The atmospheric pressure low temperature plasma treatment device according to claim 1, characterized in that, The plasma pen (1) includes a stainless steel outer shell (100). An insulating tube (101) is fixed to the inner wall of the stainless steel outer shell (100). A high-voltage pulse tube (102) is fixed in the inner cavity of the insulating tube (101). A plasma electrode (103) is installed on the high-voltage pulse tube (102); The plasma pen (1) includes a quartz tube (104). A stainless steel upper cover (105) is fixed to the outer wall of the quartz tube (104). When the stainless steel upper cover (105) is assembled with the stainless steel outer shell (100), the quartz tube (104) cooperates with the insulating tube (101). One end of the plasma electrode (103) extends into the inner cavity of the quartz tube (104). A stainless steel end cap (108) is provided at one end of the plasma pen (1) away from the stainless steel upper cover (105). A through hole communicating with the insulating tube (101) is opened on the stainless steel end cap (108).

3. An atmospheric pressure low-temperature plasma treatment device according to claim 1, characterized in that, The mainframe (2) is connected to one end of the high-voltage pulse tube (102) passing through the through hole; A flow control valve (300) is installed on the air outlet pipe of the high-pressure gas storage tank (3). An air delivery pipe is fixedly connected to the flow control valve (300).

4. The atmospheric pressure low-temperature plasma treatment device according to claim 3, wherein A stainless steel bellows (200) is fixed on the host (2). One end of the high-voltage pulse tube (102) passing through the through-hole is located inside the stainless steel bellows (200). One end of the stainless steel bellows (200) is fixed on the stainless steel end cap (108) and communicates with the through-hole on the stainless steel end cap (108). One end of the gas transmission pipe penetrates into the stainless steel bellows (200) and then extends into the insulating pipe (101). One end of the gas transmission pipe penetrates into the host (2), passes through and then extends into the insulating pipe (101) through the stainless steel bellows (200).

5. The atmospheric pressure low temperature plasma treatment device according to claim 2, wherein When the insulating pipe (101) is assembled inside the stainless steel housing (100), there is an assembly port (106) between the insulating pipe (101) and the stainless steel housing (100).

6. The atmospheric pressure low temperature plasma treatment device according to claim 5, characterized in that, A sealing ring (107) is sleeved on the assembly port (106). When the stainless steel upper cover (105) is connected to the stainless steel housing (100), one end of the quartz tube (104) abuts against the sealing ring (107).

7. The atmospheric pressure low-temperature plasma treatment device according to claim 6, wherein An opening is provided at one end of the quartz tube (104) away from the stainless steel housing (100), and the opening communicates with the inner cavity of the quartz tube (104).

8. The atmospheric pressure low temperature plasma treatment device according to claim 3, wherein The flow control valve (300) is an electric flow control valve, and the gas transmission pipe is a silica gel tube.

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