Semiconductor workpiece coating device and control method thereof

Abstract

The present application relates to a semiconductor workpiece coating device and a control method thereof, belonging to the field of semiconductor manufacturing. It includes: a coating chamber for containing coating liquid; a wafer clamp for clamping the wafer and driving the wafer to immerse in the coating liquid; the wafer clamp includes a first posture and a second posture, the first posture is the posture of the clamp when the wafer is gradually immersed in the coating liquid, and the second posture is the posture of the clamp when the wafer is completely immersed in the coating liquid; in the first posture, the bottom surface of the bottom of the wafer is tilted relative to the horizontal plane, and the wafer has a first end and a second end higher than the first end; in the second posture, the bottom surface is parallel to the horizontal plane; a gas exhaust component is arranged at least around a part of the circumference of the wafer, and the gas exhaust component has a plurality of liquid outlets; the gas exhaust component is configured so that the coating liquid flows out from the plurality of liquid outlets to form a lateral flow field along the first direction, and the first direction is the direction from the first end to the second end. The technical solution of the present application can improve the coating quality.

Description

Technical Field

[0001] The present application relates to the field of semiconductor manufacturing, and in particular to a semiconductor workpiece coating device and a control method thereof. Background Art

[0002] A wafer is a silicon wafer used in the manufacture of silicon semiconductor integrated circuits. Its starting material is silicon, and due to its round shape, it is called a wafer or silicon wafer. During the production process, the wafer undergoes coating processes such as electroplating, which coats the wafer with a layer of conductive metal. This conductive metal layer is then processed to form conductive circuits. As the basic material of chips, the wafer has extremely high requirements for coating and plating, and therefore the process requirements are also high. The uniformity of the coating must be ensured during wafer coating to guarantee wafer quality.

[0003] At present, there are two main types of electroplating devices in the coating process of semiconductor workpieces, based on the position of the anode and cathode: one is a vertical electroplating device and the other is a horizontal electroplating device. As for the horizontal electroplating device, during electroplating, the wafer is placed horizontally with the surface to be plated facing down, which facilitates the loading and unloading of the wafer. Moreover, since the surface to be plated of the wafer is at the same depth in the plating solution, the pressure is the same everywhere, which can achieve better electroplating uniformity compared to the vertical electroplating device. However, compared with the trend of miniaturization of process nodes in semiconductor manufacturing, such as the development from 16 nanometers to 7 nanometers, the electroplating quality still cannot meet the needs. Summary of the Invention

[0004] In view of this, the present application provides a semiconductor workpiece coating device and a control method thereof to solve at least one problem existing in the background technology.

[0005] To achieve the above objectives, the technical solution of this application is implemented as follows:

[0006] In a first aspect, an embodiment of the present application provides a semiconductor workpiece coating device, comprising:

[0007] a coating chamber for containing a coating liquid;

[0008] A wafer clamp is used to clamp a wafer and drive the wafer to be immersed in the coating liquid; the wafer clamp includes a first posture and a second posture, the first posture is the posture of the clamp when the wafer is gradually immersed in the coating liquid, and the second posture is the posture of the clamp when the wafer is completely immersed in the coating liquid; in the first posture, the bottom surface of the bottom of the wafer is inclined relative to the horizontal plane, and the wafer has a first end and a second end higher than the first end; in the second posture, the bottom surface is parallel to the horizontal plane;

[0009] A gas exhaust component is arranged at least around a portion of the circumference of the wafer, and the gas exhaust component has a plurality of liquid outlets; the gas exhaust component is configured so that the coating liquid flows out from the plurality of liquid outlets to form a lateral flow field along a first direction, and the first direction is the direction from the first end to the second end.

[0010] In an optional embodiment, the gas exhaust assembly includes a supporting component and a plurality of guide members arranged on the supporting component, and the guide members are extended in a first direction; the plurality of liquid outlets are located on the supporting component, and the guide members are configured on one side or both sides of the liquid outlets.

[0011] In an optional embodiment, the guide member is arranged to be inclined from bottom to top from the first end to the second end.

[0012] In an optional embodiment, the central angle of the arc formed by the plurality of liquid outlets on the supporting component is 90°-180°.

[0013] In an optional embodiment, the length of a line connecting the two liquid outlets located at the edge of the supporting component is 1.2-1.5 times the diameter of the wafer.

[0014] In an optional embodiment, it further includes a flow equalizer plate and a seal located below the gas exhaust component, the flow equalizer plate includes a filtering portion and an abutting portion abutting the gas exhaust component, and the seal is located between the gas exhaust component and the abutting portion.

[0015] In a second aspect, an embodiment of the present application provides a method for controlling the semiconductor workpiece coating device described above, the method comprising:

[0016] Controlling the wafer clamp to drive the wafer to be immersed in the coating liquid in a first posture, and switching from the first posture to a second posture after the wafer is immersed in the coating liquid;

[0017] During the process of immersing the wafer in the coating liquid in a first posture, the flow rate of the liquid outlet is controlled to increase from a first preset flow rate to a second preset flow rate; after the wafer is converted from the first posture to the second posture, the flow rate of the liquid outlet is controlled to recover from the second preset flow rate to the first preset flow rate; the second preset flow rate is greater than the first preset flow rate.

[0018] In an optional embodiment, the method further includes:

[0019] During the process of immersing the wafer in the coating liquid in a first posture, the flow rate and flow of the fluid at the liquid inlet at the bottom of the coating chamber are controlled; the flow rate of the fluid flowing out of the liquid inlet and through the vertical DC field formed by the flow uniforming plate is made to be a third preset flow rate; the third preset flow rate is less than the second preset flow rate, and the flow rate of the vertical DC field is greater than the flow rate of the lateral flow field.

[0020] In an optional embodiment, controlling the wafer clamp to drive the wafer to be immersed in the coating liquid in a first posture, and switching from the first posture to a second posture after the wafer is immersed in the coating liquid, includes:

[0021] The wafer clamp is controlled so that the movement of the wafer immersed in the coating liquid is a uniform downward movement or a uniformly accelerated downward movement; the downward movement speed of the wafer before entering the horizontal state is 45mm / s-150mm / s.

[0022] In an optional embodiment, the ratio of the second preset flow rate to the first preset flow rate is 2-4.

[0023] The semiconductor workpiece coating device and control method of the embodiment of the present application set the wafer clamp to include a first posture and a second posture. In the first posture, the bottom surface of the bottom of the wafer is tilted relative to the horizontal plane, and the coating device also includes a gas exhaust component, which has a plurality of liquid outlets; the gas flows out through the liquid outlet to form a lateral flow field along the first direction. In the process of the wafer gradually being immersed in the coating liquid in the first posture, the lateral flow field in the first direction is combined with the coating liquid in the coating chamber to produce a tendency to surge toward the bottom surface of the wafer directly toward the corner formed between the second end of the wafer, the coating liquid and the wafer clamp. As the wafer descends, the coating liquid with directionally surging quickly fills the corner, thereby squeezing out the gas at the corner, preventing bubbles from forming at the corner when the wafer is completely immersed in the coating liquid, thereby improving the quality of wafer coating.

[0024] Additional aspects and advantages of the present application will be given in part in the description below, and in part will become apparent from the description below, or will be learned through practice of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] The drawings described herein are used to provide a further understanding of the present application and constitute a part of the present application. The illustrative embodiments of the present application and their descriptions are used to explain the present application and do not constitute an improper limitation on the present application. In the drawings:

[0026] Figure 1 A schematic cross-sectional view of a semiconductor workpiece coating device provided in an embodiment of the present application;

[0027] Figure 2 for Figure 1 Schematic diagram of the side projection;

[0028] Figure 3 for Figure 1 A partial cross-sectional schematic diagram of the gas exhaust assembly in FIG. 1 (with the right end partially cut away);

[0029] Figure 4 A schematic top view of a gas exhaust assembly in a semiconductor workpiece coating apparatus provided in an embodiment of the present application;

[0030] Figure 5 A bottom view schematically shows a gas exhaust assembly in a semiconductor workpiece coating apparatus according to an embodiment of the present application;

[0031] Figure 6 A diagram showing the positional relationship between a guide member and a wafer in a semiconductor workpiece coating device provided in an embodiment of the present application;

[0032] Figure 7 Schematic diagram of the distribution of the liquid outlet of the gas exhaust assembly in the semiconductor workpiece coating device provided in the embodiment of the present application Figure 1 ;

[0033] Figure 8 Schematic diagram of the distribution of the liquid outlet of the gas exhaust assembly in the semiconductor workpiece coating device provided in the embodiment of the present application Figure 2 ;

[0034] Figure 9 A schematic diagram of a flow distribution plate and a sealing member in a semiconductor workpiece coating device provided in an embodiment of the present application;

[0035] Figure 10 A schematic flow chart of a control method for a semiconductor workpiece coating device according to an embodiment of the present application;

[0036] Figure 11 Schematic diagram of the vertical flow field and the lateral flow field in the control method of the semiconductor workpiece coating device provided in an embodiment of the present application.

[0037] Description of reference numerals:

[0038] 10. Coating chamber; 20. Wafer fixture; 30. Gas exhaust assembly; 31. Liquid outlet; 32. Guide member; 321. Guide bar; 322. First enclosure; 323. Second enclosure; 33. Support member; 40. Wafer; 50. Flow equalizer; 51. Abutment portion; 52. Filtering portion; 60. Sealing member. DETAILED DESCRIPTION

[0039] To make the technical solutions and beneficial effects of this application more clearly understood, the following detailed description is given by way of specific embodiments. The accompanying drawings are not necessarily drawn to scale, and local features may be enlarged or reduced to more clearly illustrate the details of the local features. Unless otherwise defined, the technical and scientific terms used herein have the same meanings as those in the technical field to which this application belongs.

[0040] In the description of this application, the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "height", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise" and the like to indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of simplifying the description of this application, and do not indicate that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and should not be understood as a limitation to this application.

[0041] In this application, the terms "first" and "second" are used solely for descriptive purposes and should not be construed as indicating the relative importance of the features indicated or the quantity of the technical features indicated. Therefore, a feature specified as "first" or "second" may explicitly include at least one of such features. Throughout this application, "plurality" means at least two, such as two or three, and "several" means at least one, such as one, two, or three, unless otherwise specifically defined.

[0042] In this application, unless otherwise expressly defined, the terms "installed," "connected," "connect," "fixed," and "disposed" should be interpreted broadly. For example, "connection" can mean fixed, removable, or integrated; it can mean mechanical or electrical; it can mean direct or indirect connection through an intermediary; it can also mean internal communication between two components or an interaction between two components. Those skilled in the art will understand the specific meanings of these terms in this application based on the specific circumstances.

[0043] In the present application, unless otherwise explicitly defined, when a first feature is “on,” “above,” “above,” “above,” “below,” “below,” or “below” a second feature, the first feature and the second feature may be in direct contact, or the first feature and the second feature may be in indirect contact via an intermediate medium. Moreover, when a first feature is “on,” “above,” or “above” a second feature, it may mean that the first feature is directly above or obliquely above the second feature, or simply means that the horizontal height of the first feature is higher than the horizontal height of the second feature. When a first feature is “below,” “below,” or “below” a second feature, it may mean that the first feature is directly below or obliquely below the second feature, or simply means that the horizontal height of the first feature is lower than the horizontal height of the second feature.

[0044] In order to fully understand the present application, detailed steps and detailed structures will be presented in the following description to illustrate the technical solution of the present application. The preferred embodiments of the present application are described in detail below. However, in addition to these detailed descriptions, the present application may also have other implementation methods.

[0045] During the research and development, the applicant of this application discovered that the part of the wafer hanger in the horizontal electroplating device that supports the wafer protrudes from the bottom surface of the wafer, forming a corner. As the wafer gradually immerses into the electroplating solution, some gas is trapped at the corner and cannot be discharged. After the wafer is completely immersed in the coating chamber, bubbles are formed between the bottom surface of the wafer and the coating liquid due to the presence of air, resulting in the surface of the wafer to be coated at the bubble being unable to contact the coating liquid to complete the coating, affecting the quality of electroplating. In response to this discovery, the applicant conducted further research and development and proposed the following technical solution.

[0046] The present application provides a semiconductor workpiece coating device. In this embodiment, the coating device is specifically an electroplating device. Figure 1-Figure 3 , a semiconductor workpiece coating device includes:

[0047] a coating chamber 10 for containing a coating liquid;

[0048] The wafer clamp 20 is used to clamp the wafer 40 and drive the wafer 40 to be immersed in the coating liquid. The wafer clamp 20 includes a first posture and a second posture. The first posture is the posture of the clamp when the wafer 40 is gradually immersed in the coating liquid, and the second posture is the posture of the clamp when the wafer 40 is completely immersed in the coating liquid. In the first posture, the bottom surface of the bottom of the wafer 40 is inclined relative to the horizontal plane, and the wafer 40 has a first end and a second end higher than the first end. In the second posture, the bottom surface is parallel to the horizontal plane.

[0049] The gas exhaust assembly 30 is at least arranged around a portion of the circumference of the wafer 40, and the gas exhaust assembly 30 has a plurality of liquid outlets 31; the gas exhaust assembly 30 is configured so that the coating liquid flows out from the plurality of liquid outlets 31 to form a lateral flow field along a first direction, wherein the first direction is the direction from the first end to the second end, Figure 7 , the first direction is the same as the direction of F1.

[0050] As will be appreciated, coating chamber 10 can be made of corrosion-resistant materials and have sufficient volume to accommodate the coating liquid and allow wafer 40 to be fully immersed. The inner walls of coating chamber 10 are smooth to prevent unnecessary turbulence in the coating liquid. A refill port (not shown) is provided at the bottom of coating chamber 10 for injecting coating liquid into the chamber, and an overflow port is provided at the top for controlling the coating liquid level.

[0051] Specifically, the wafer clamp 20 may include a clamping part and a driving part. The clamping part is made of a material that does not affect the coating effect, and can firmly clamp the edge of the wafer 40 without damaging the wafer 40. The driving part can control the movement of the clamping part, including up and down movement and angle adjustment. The wafer clamp 20 has two working postures: a first posture and a second posture. The first posture is the posture of the clamp when the wafer 40 is gradually immersed in the coating liquid. At this time, the bottom surface of the bottom of the wafer 40 is tilted relative to the horizontal plane, and the wafer 40 has a first end and a second end higher than the first end. In the first posture, the inclination angle of the wafer 40 is adjustable, usually maintained between 3° and 10°, so that the gas can be discharged smoothly from the corner. The second posture is the posture of the clamp when the wafer 40 is completely immersed in the coating liquid, and the bottom surface is parallel to the horizontal plane.

[0052] The gas exhaust assembly 30 is designed to generate a directional lateral flow field during the process of immersing the wafer 40 in the coating liquid, and the directional lateral flow field can flow from the first end to the second end along the inclined bottom surface of the wafer 40, and quickly fill the second end of the wafer 40, the corner between the coating liquid and the wafer clamp 20, so that when the wafer 40 is about to be completely immersed in the coating liquid but not completely immersed, that is, the second end of the wafer 40 is slightly higher than the coating liquid surface, and the corner is connected to the air, the directional lateral flow field enables the coating liquid to quickly fill the corner, thereby squeezing out the gas at the corner, thereby ensuring that when the wafer 40 is completely immersed in the coating liquid, no bubbles are formed at the corner.

[0053] The number of liquid outlets 31 of the gas exhaust assembly 30 is determined based on the size of the wafer 40 and coating requirements. In this embodiment, the number of liquid outlets 31 can be 8-24, evenly distributed in a specific area around the wafer 40. The diameter of the liquid outlet 31 can be set to 0.5 mm to 2 mm to generate an appropriate flow rate and flow rate.

[0054] It should be noted that, in this embodiment, when the wafer clamp 20 is in the second posture, in the height direction, the liquid outlet 31 is located below the wafer 40 to prevent the first end of the wafer 40 from blocking the coating liquid flowing out of the liquid outlet 31 to form a lateral flow field. Specifically, in this embodiment, when the wafer clamp 20 is in the second posture, the distance between the liquid outlet 31 and the bottom of the wafer clamp 20 is 2-5 mm.

[0055] Specifically, the gas exhaust assembly 30 further includes a liquid inlet (not shown) to supply coating liquid to the liquid outlets 31. Specifically, the diameter of the liquid inlet is larger than the diameter of the liquid outlets 31. This ensures that the flow rate of the liquid inlet can meet the flow rate required by the lateral flow field generated by the plurality of liquid outlets 31.

[0056] In some embodiments of the present application, reference is made to Figure 3-Figure 5 The gas exhaust assembly 30 includes a support component 33 and a plurality of guide members 32 arranged on the support component 33, and the guide members 32 extend in the first direction; the plurality of liquid outlets 31 are located on the support component 33, and the guide members 32 are arranged on one side or both sides of the liquid outlet 31.

[0057] As will be appreciated, the support member 33 can be made of a corrosion-resistant material and be partially annular in shape, with an appropriate gap between it and the inner wall of the coating chamber 10. A liquid channel is provided within the support member 33, connected to an external liquid supply system via a liquid inlet, facilitating a stable liquid supply to each liquid outlet 31. The guide member 32 can be made of the same material as the support member 33. The provision of the guide member 32 allows the coating liquid to flow along the extension direction of the guide member 32, forming an effective directional flow field that squeezes out gas from corners.

[0058] Specifically, the guide member 32 includes a plurality of guide bars 321 spaced apart from each other, the guide bars 321 extending in a first direction, and the plurality of guide bars 321 are parallel to each other; the liquid outlet 31 is also provided with a plurality of guide bars 321, and each guide bar 321 is located between two adjacent guide bars 321. In this way, in addition to the guide bars 321 being able to guide the flow of the coating liquid, relatively independent channels can be formed between adjacent guide bars 321, and the coating liquid flowing out of each liquid outlet 31 can flow in its own channel, thereby forming a lateral flow field along the first direction, and the liquid flowing out of each channel is consistent in direction and does not interfere with each other. Specifically, the end of the guide bar 321 facing one end of the liquid outlet 31 is an arcuate surface or a spherical surface. It can be understood that the flow resistance of the liquid on the arcuate surface or the spherical surface is relatively small. In this way, the resistance of the coating liquid flowing out of the liquid outlet 31 can be reduced, and the flow rate of the coating liquid can be increased.

[0059] In some embodiments of the present application, reference is made to Figure 6, the guide member 32 is tilted from bottom to top from the first end to the second end. Specifically, the guide member 32 is tilted from bottom to top from the first end to the second end. At this time, the corner is on the trajectory of the coating liquid flowing out of the guide member 32 to form a directional lateral flow field. The directional lateral flow field can push the coating liquid in the coating chamber 10 to have a tendency to surge toward the first direction. When the wafer 40 continues to descend, the coating liquid surging toward the first direction can more directly fill the corner to squeeze out the gas in the corner. In this embodiment, the angle between the guide member 32 and the horizontal plane, that is, the inclination angle can be 15°-45°. In other embodiments, the angle of the guide member 32 can also be unchanged, and the guide bar 321 can be set to tilt from bottom to top from the first end to the second end to achieve this effect.

[0060] Specifically, the guide member 32 further includes a first blocking portion 322, which surrounds the liquid outlets 31 from one end of the plurality of liquid outlets 31 away from the guide bar 321 to prevent the coating liquid from flowing in a direction away from the guide bar 321. Thus, on the one hand, the coating liquid flowing out of the liquid outlet 31 is blocked by the first blocking portion 322, allowing the coating liquid to flow more concentratedly toward the second end (i.e., the higher end); on the other hand, the coating liquid flowing toward the first blocking portion 322 generates a recoil force when blocked by the first blocking portion 322, pushing the coating liquid in the opposite direction, i.e., toward the second end.

[0061] Specifically, the guide member 32 further includes a second enclosing portion 323, one end of which is connected to the first enclosing portion 322 and the other end of which extends in the first direction. The second enclosing portion 323 can play the same role as the guide strip 321, cooperating with adjacent guide strips 321 to guide liquid flowing out of the edge liquid outlet in the first direction, thereby forming a transverse flow field along the first direction.

[0062] In some embodiments of the present application, reference is made to Figure 7 The central angle of the arc formed by the plurality of liquid outlets 31 on the support component 33 is 90°-180°.

[0063] It is understandable that this layout makes the liquid outlet 31 concentrated in the lower end area of ​​the wafer 40 when it is immersed in the coating liquid, that is, the first end. This is conducive to forming a concentrated lateral flow field in the first direction, driving the gas to move toward the second end. If the central angle exceeds 180 degrees, the flow direction of the liquid flowing out of the liquid outlet 31 intersects with the first direction, and may even be changed by the side wall of the guide member, resulting in a flow field opposite to the lateral flow field in the first direction, such as Figure 7 As shown by the dotted arrow in the figure, it not only fails to increase the intensity of the flow field in the first direction, but will interfere with the flow field in the first direction, affecting the effect of removing gas. Figure 7The interference flow field formed by the dotted arrow is marked as F1 in the figure. Figure 7 The angle of the central angle is marked as F2. Figure 7 Marked as A.

[0064] Specifically, the radius of the arc is slightly larger than the radius of the wafer 40 , which is beneficial for the liquid outlet 31 to maintain an appropriate distance from the surface of the wafer 40 , thereby effectively removing gas without causing excessive impact on the surface of the wafer 40 .

[0065] In some embodiments of the present application, reference is made to Figure 8 The length of the line connecting the two liquid outlets 31 at the edge is 1.2-1.5 times the diameter of the wafer 40.

[0066] This design is conducive to the lateral flow field formed by the gas exhaust component 30 to cover the entire wafer 40, ensuring that the coating liquid in the lateral flow field can completely fill the corners and improve the gas exhaust effect. Figure 8 Marked as L1.

[0067] In some embodiments of the present application, reference is made to Figure 9 The device also includes a flow equalizer 50 and a seal 60 located below the gas exhaust component 30, the flow equalizer 50 filtering portion 52 and an abutting portion 51 abutting the gas exhaust component, and the seal 60 is located between the gas exhaust component 30 and the abutting portion 51.

[0068] Specifically, the flow plate 50 can be made of a porous material to evenly distribute the liquid flowing into the liquid inlet below to form a more uniform vertical DC field. The abutment portion 51 of the flow plate 50 matches the bottom shape of the gas exhaust component 30, and a sealed connection is achieved through the seal 60 to prevent liquid from leaking from the connection. The seal 60 is made of a corrosion-resistant elastic material, such as fluororubber or silicone rubber, which can maintain good sealing performance for a long time in the coating liquid environment. The filter portion 52 of the flow plate 50 faces the direction of the wafer 40, and its surface area is larger than the surface area of ​​the wafer 40, which is conducive to the flow field being able to completely cover the surface of the wafer 40.

[0069] The present application also provides a method for controlling a semiconductor workpiece coating device. The semiconductor workpiece coating device is the semiconductor workpiece coating device in the above embodiment. Figure 10 , the method comprising:

[0070] S801: Controlling the wafer clamp to drive the wafer to be immersed in the coating liquid in a first posture, and switching from the first posture to a second posture after the wafer is immersed in the coating liquid;

[0071] S802: During the process of immersing the wafer in the coating liquid in the first posture, the flow rate of the liquid outlet is controlled to increase from the first preset flow rate to the second preset flow rate; after the wafer is converted from the first posture to the second posture, the flow rate of the liquid outlet is controlled to recover from the second preset flow rate to the first preset flow rate; the second preset flow rate is greater than the first preset flow rate.

[0072] Specifically, in the first posture, the bottom surface of the wafer is tilted relative to the horizontal plane at an angle of 3°-10°. This angle range effectively guides gas outflow and prevents bubble formation while minimizing instability during immersion of the wafer 40. The precise motion trajectory of the wafer holder 20 ensures smooth immersion of the wafer 40 in the coating solution, minimizing uneven coating caused by shaking.

[0073] It should be noted that the dynamic adjustment of the flow rate is synchronized with the immersion process of the wafer 40. When the wafer 40 is first immersed, the flow rate is low. As the immersion depth of the wafer 40 increases, the flow rate gradually increases until it reaches the second preset flow rate. This flow rate control strategy can provide the strongest gas exhaust effect at the stage when bubbles are most likely to form.

[0074] In some embodiments of the present application, the ratio of the second preset flow rate to the first preset flow rate is 2-4.

[0075] Understandably, if the ratio is too small, the designed effect will be difficult to achieve, while if the ratio is too large, turbulence and splashing will easily occur, affecting the coating effect. It should be noted that this ratio range has been verified through extensive experiments and can improve gas exhaust efficiency while avoiding turbulence and splashing of the coating liquid caused by excessive flow rate differences.

[0076] Specifically, the first preset flow rate can be 0.5m / s-1m / s, and the second preset flow rate can be 1.5m / s-3m / s. After a lot of experiments, this preset flow rate can not only squeeze out the gas at the corners, but also reduce the impact on the coating process.

[0077] In some embodiments of the present application, the method further comprises:

[0078] During the process of immersing the wafer in the coating liquid in a first posture, the flow rate and flow of the fluid at the liquid inlet at the bottom of the coating chamber are controlled; the flow rate of the vertical DC field formed by the fluid flowing out of the liquid inlet and passing through the flow uniforming plate is made to be a third preset flow rate; the third preset flow rate is less than the second preset flow rate, and the flow rate of the vertical DC field is greater than the flow rate of the lateral flow field.

[0079] Specifically, the ratio of the third preset flow rate to the second preset flow rate may be 1:2, and the ratio of the flow rate of the vertical flow field to the flow rate of the transverse flow field may be 3:1.

[0080] Specifically, the third preset flow rate can be 0.75m / s-1.5m / s. The vertical flow field is primarily used to provide a stable coating environment, while the lateral flow field is primarily used to squeeze out gas from corners. The two flow fields work synergistically to effectively prevent air bubbles and improve coating quality.

[0081] Specifically, the coating liquid forms a vertical direct current field because there is a liquid replenishing port at the bottom, and the function of the flow plate 50 is only to uniformize the metal ions in the coating liquid replenished by the liquid replenishing port.

[0082] Furthermore, the ratio of the third preset flow rate to the second preset flow rate is 1:2, and the ratio of the flow rate of the vertical flow field to the flow rate of the horizontal flow field is 3:1. Figure 11 As shown, the solid arrow is the lateral flow field, and the dotted arrow is the vertical DC field. The replenishment of metal ions mainly depends on the vertical DC field of the dotted arrow, and the vertical DC field is set to a large flow rate; on the one hand, the coating liquid in the coating chamber can be replenished in time to meet the consumption of metal ions in the coating process of the wafer surface to be coated in time. On the other hand, the large flow rate of the vertical DC field can produce a larger surge amplitude on the surface of the coating liquid. Then, by setting the lateral flow field to a flow rate greater than that of the vertical DC field, a certain driving force can be generated by the lateral flow field, thereby pushing the surge formed by the vertical DC field to the corner at the bottom of the wafer 40. As the wafer 40 descends, the surge with a certain direction quickly enters the corner, thereby squeezing the air out of the corner, and the vertical DC field is adjacent Figure 11 Marked as F3.

[0083] In some embodiments of the present application, controlling the wafer clamp to drive the wafer to be immersed in the coating liquid in a first posture, and switching from the first posture to a second posture after the wafer is immersed in the coating liquid, includes:

[0084] The wafer clamp 20 is controlled so that the movement of the wafer 40 immersed in the coating liquid is a uniform downward movement or a uniformly accelerated downward movement; the downward movement speed of the wafer 40 before entering the horizontal state is 45mm / s-150mm / s.

[0085] It should be noted that uniform descent is suitable for applications requiring high coating uniformity, while uniformly accelerated descent is suitable for applications requiring rapid coating. The choice of descent speed requires consideration of factors such as the viscosity of the coating liquid and wafer size. For example, a lower descent speed is typically used for larger wafers 40. This will not be discussed in detail here.

[0086] It should be understood that the above embodiments are exemplary and are not intended to encompass all possible implementations of the technical solutions of the present application. Various modifications and variations may be made based on the above embodiments without departing from the scope disclosed herein. Similarly, the various technical features of the above embodiments may be arbitrarily combined to form additional embodiments of the present application that may not be explicitly described. Therefore, the above embodiments merely illustrate several implementations of the present application and do not limit the scope of protection of the patent application.

Claims

1. A semiconductor workpiece coating device, characterized in that: include: a coating chamber for containing a coating liquid; A wafer clamp, used for clamping a wafer and driving the wafer to immerse in the coating liquid; The wafer clamp includes a first posture and a second posture, wherein the first posture is the posture of the clamp when the wafer is gradually immersed in the coating liquid, and the second posture is the posture of the clamp when the wafer is completely immersed in the coating liquid; in the first posture, the bottom surface of the bottom of the wafer is inclined relative to the horizontal plane, and the wafer has a first end and a second end higher than the first end; in the second posture, the bottom surface is parallel to the horizontal plane; a gas exhaust assembly disposed at least around a portion of the circumference of the wafer, the gas exhaust assembly having a plurality of liquid outlets; the gas exhaust assembly is configured such that the coating liquid flows out of the plurality of liquid outlets to form a lateral flow field along a first direction, the first direction being a direction from the first end to the second end; The gas exhaust assembly includes a support member and a plurality of guide members disposed on the support member, the guide members extending in a first direction; a plurality of liquid outlets are located on the support member, and the guide members are disposed on one or both sides of the liquid outlets; the guide members are inclined upward from the first end to the second end and include a plurality of guide bars spaced apart; The guide member also includes a first enclosing portion and a second enclosing portion, the first enclosing portion enclosing the liquid outlet from one end of the plurality of liquid outlets away from the guide strip to prevent the coating liquid from flowing in the direction away from the guide strip; one end of the second enclosing portion is connected to the first enclosing portion, and the other end extends along the first direction; the second enclosing portion cooperates with the adjacent guide strip to guide the liquid flowing out of the edge liquid outlet to flow along the first direction, thereby forming a transverse flow field along the first direction.

2. The semiconductor workpiece coating device according to claim 1, characterized in that: The central angle of the arc formed by the plurality of liquid outlets on the supporting component is 90°-180°.

3. The semiconductor workpiece coating device according to claim 1, characterized in that: The length of the line connecting the two liquid outlets located at the edge of the supporting component is 1.2-1.5 times the diameter of the wafer.

4. The semiconductor workpiece coating device according to any one of claims 1 to 3, characterized in that: It also includes a flow equalizer plate and a seal located below the gas exhaust component. The flow equalizer plate includes a filtering portion and an abutting portion abutting the gas exhaust component. The seal is located between the gas exhaust component and the abutting portion.

5. The control method of the semiconductor workpiece coating device according to any one of claims 1 to 4, characterized in that: The method comprises: Controlling the wafer clamp to drive the wafer to be immersed in the coating liquid in a first posture, and switching from the first posture to a second posture after the wafer is immersed in the coating liquid; During the process of immersing the wafer in the coating liquid in a first posture, the flow rate of the liquid outlet is controlled to increase from a first preset flow rate to a second preset flow rate; after the wafer is converted from the first posture to the second posture, the flow rate of the liquid outlet is controlled to recover from the second preset flow rate to the first preset flow rate; the second preset flow rate is greater than the first preset flow rate.

6. The control method of the semiconductor workpiece coating device according to claim 5, characterized in that: The method further comprises: During the process of immersing the wafer in the coating liquid in a first posture, the flow rate and flow of the fluid at the liquid inlet at the bottom of the coating chamber are controlled; the flow rate of the fluid flowing out of the liquid inlet and through the vertical DC field formed by the flow uniforming plate is made to be a third preset flow rate; the third preset flow rate is less than the second preset flow rate, and the flow rate of the vertical DC field is greater than the flow rate of the lateral flow field.

7. The control method of the semiconductor workpiece coating device according to claim 6, characterized in that: The controlling the wafer clamp to drive the wafer to be immersed in the coating liquid in a first posture, and switching from the first posture to a second posture after the wafer is immersed in the coating liquid, comprises: The wafer clamp is controlled so that the movement of the wafer immersed in the coating liquid is a uniform downward movement or a uniformly accelerated downward movement; the downward movement speed of the wafer before entering the horizontal state is 45mm / s-150mm / s.

8. The control method of the semiconductor workpiece coating device according to claim 6, characterized in that: The ratio of the second preset flow rate to the first preset flow rate is 2-4.

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