Special silicon carbide double-sided polishing machine based on high-speed and high-pressure CMP (chemical mechanical polishing) technology

Abstract

The invention discloses a special silicon carbide double-sided polishing machine based on a high-speed and high-pressure CMP polishing technology, and belongs to the technical field of silicon carbide polishing. A polishing machine base for supporting is arranged, and a control box is mounted on the side face of the polishing machine base; comprising a polishing liquid barrel which is installed on the upper side of a polishing machine base, a polishing chamber is installed on the upper side of the polishing machine base, a dustproof chamber is installed on the upper side of the polishing chamber, and meanwhile the polishing liquid barrel is provided with a cooling circulation mechanism. According to the special silicon carbide double-sided polishing machine based on the high-speed and high-pressure CMP polishing technology, the adsorption bases assembled by the rotating plates are arranged at equal angles, automatic feeding and discharging can be achieved, the silicon carbide wafer polishing efficiency is effectively improved, the requirement for automation of a production line is met, automatic machining of the production line can be completed in cooperation with a mature mechanical arm mechanism, and the production efficiency is improved. And moreover, the polishing piece is matched with the radial reciprocating movement during polishing, so that the surface precision of the product is improved.

Description

Technical Field

[0001] The present invention relates to the technical field of polishing for silicon carbide, and specifically to a special double-sided polishing machine for silicon carbide based on high-speed and high-pressure CMP polishing technology. Background Art

[0002] As an emerging third-generation semiconductor material, silicon carbide has the characteristics of large bandgap, high breakdown electric field, high thermal conductivity, high saturated electron migration rate, and the ability to withstand high power compared with traditional first-generation and second-generation semiconductors, and is favored in the industry. However, during production, due to the high processing difficulty of silicon carbide, it is difficult to polish it for use, which affects the production efficiency of silicon carbide.

[0003] To overcome the above defects, the prior art (a Chinese patent application with the application number CN202323157443.5 and the application date November 22, 2023) is a silicon carbide polishing machine with a cleaning device. The electric cylinder pushes the mounting shell, the first motor, and the linkage rod to move until the polishing pad abuts against the two side surfaces of the silicon carbide part. During this process, the extension length of the output end of the electric cylinder can be adjusted according to the pressure sensed by the electric cylinder until the pressures applied by the two electric cylinders to the surface of the silicon carbide part are the same. This can avoid one of the polishing pads contacting the surface of the silicon carbide part too tightly or too loosely, and can also adapt to the processing of silicon carbide parts with different thicknesses. At the same time, it can also adapt to the different positions of the silicon carbide part when held by the operator. Therefore, this solution not only solves the defect in the traditional solution that only one-sided polishing of the silicon carbide part leads to low processing efficiency, but also, under the action of the transposition plate, the equipment is only in a suspended processing state during the movement of the transposition plate, that is, the processing continuity of the equipment is better. There is also the prior art (a Chinese patent application with the application number CN202220611307.5 and the application date March 21, 2022) is a double-sided polishing machine for silicon carbide processing. The motor drives the gear to rotate, and then through the cooperation of the gear and the gear ring, one of the second fixed shafts rotates. Then, through the cooperation of the limiting groove and the limiting prism, the two second fixed shafts rotate simultaneously. Then, the second fixed shaft drives the second sprocket to rotate. Through the design of the chain, the first sprocket, and the second sprocket, the other first fixed shaft rotates, and then the lower polishing disc and the upper polishing disc rotate simultaneously, which can polish the two surfaces at the same time and improve the polishing efficiency. And the prior art (a Chinese patent application with the application number CN202220394740.8 and the application date February 25, 2022) is a silicon carbide double-sided polishing machine with a dust collection device. The installation cavity in the installation frame is used to install the motor of the grinding component, and the grinding operation is carried out in the grinding cavity, effectively avoiding dust from entering the motor and causing damage, and improving the service life of the motor. The pressure mechanism can fit with the limiting cam, and cooperate with the buffer spring at the other end of the limiting cam, which can squeeze the limiting cam and ensure its connection with the claw-type clamping mechanism, and can drive the polishing head to polish through the motor. It can effectively remove the dust generated during the use of the double-sided polishing machine, avoid the dust adhering to the polishing head, and avoid the particles adhered during the re-polishing affecting the polishing quality. Although the prior art can complete the polishing of it, in the process of use, to obtain a finished silicon carbide wafer, its processing difficulty is much higher than that of traditional semiconductors. Especially for the polishing of silicon carbide, due to the extremely high hardness and stable chemical properties of silicon carbide, the traditional polishing process has a very low processing efficiency and is difficult to meet the actual production and use requirements.

[0004] In view of the above problems, there is an urgent need to innovate and design on the basis of the original polishing machine for silicon carbide. Summary of the Invention

[0005] The object of the present invention is to provide a special double-sided polishing machine for silicon carbide based on high-speed and high-pressure CMP polishing technology, so as to solve the problem proposed in the above background technology that in the process of use, to obtain a finished silicon carbide wafer, the processing difficulty is much higher than that of traditional semiconductors. Especially for the polishing of silicon carbide, due to the extremely high hardness and stable chemical properties of silicon carbide, the traditional polishing process has very low processing efficiency and is difficult to meet the actual production and use requirements.

[0006] To achieve the above object, the present invention provides the following technical solution: A special double-sided polishing machine for silicon carbide based on high-speed and high-pressure CMP polishing technology is provided with a polishing machine base for support, and a control box is installed on the side of the polishing machine base; it includes: a polishing liquid cylinder, installed on the upper side of the polishing machine base, and a polishing chamber is installed on the upper side of the polishing machine base, and a dust-proof chamber is installed on the upper side of the polishing chamber. At the same time, the polishing liquid cylinder is provided with a cooling circulation mechanism; a support plate, installed on the inner surface of the polishing chamber, and a gear seat is rotatably connected to the upper side of the support plate, and a driving gear is meshed with the outer surface of the gear seat. At the same time, a rotating plate is installed on the upper side of the gear seat, and through holes are opened on the inner surface of the rotating plate. At the same time, the rotating plate is provided with a limiting sliding mechanism.

[0007] Preferably, the polishing liquid cylinder and the polishing machine base form an integrated structure, the polishing machine base and the polishing chamber form a support structure, and the polishing chamber and the dust-proof chamber form a dust-proof structure.

[0008] Through the above structure, it is convenient to effectively control the effect during the detection of silicon carbide during use, and improve the use stability and safety.

[0009] Preferably, the cooling circulation mechanism includes a polishing component installed on the lower surface of the polishing liquid cylinder, a cooling water chamber one is opened in the side wall of the polishing liquid cylinder, and a cooling disc is installed on the lower surface of the polishing component. At the same time, a cooling water chamber two is opened on the inner surface of the cooling disc, and an inlet and an outlet are opened on the inner surface of the cooling disc, and the inlet and the outlet are arranged in a staggered height; the polishing liquid cylinder and the polishing component form an integrated structure, and the polishing liquid cylinder and the cooling water chamber one form a cooling structure. At the same time, the cooling disc and the inlet and the outlet form a water circulation structure.

[0010] Through the above structure, it is convenient to effectively control the circulation setting of the cooling water during use and improve the circulation effect.

[0011] Preferably, a central control type speed reducer is installed on the lower side of the inner surface of the polishing machine base, an outlet flow channel is rotatably connected to the inner surface of the central control type speed reducer, a liquid outlet is installed on the lower side of the outlet flow channel, an inlet is arranged on the side of the outlet flow channel, and an inlet flow channel is installed on the outer surface of the inlet, and the inlet flow channel is nested on the outside of the outlet flow channel.

[0012] With the above structure, during use, it is convenient to control the stability of the flow through the inlet and outlet settings and to control the temperature for the work.

[0013] Preferably, the support plate and the polishing chamber form a nested structure, and the support plate and the driving gear form a meshing rotation structure through a gear seat. Moreover, the gear seat and the rotating plate form an integral structure, and the through holes are arranged at equal angles with respect to the central axis of the inner surface of the rotating plate.

[0014] With the above structure, during use, it can effectively support the rotating plate and control the rotation angle, facilitating the work during subsequent polishing.

[0015] Preferably, the limiting sliding mechanism includes a slide rail installed on the upper surface of the rotating plate. A moving seat is slidably connected to the upper surface of the slide rail. An installation seat is installed on the upper surface of the moving seat. A servo motor I is installed on the side surface of the outer surface of the installation seat. A driving gear is rotatably connected to the surface of the servo motor I. A driven gear is meshed with the outer surface of the driving gear, and the driven gear is positioned and rotated above the installation seat. The rotating plate and the moving seat form a limiting movement structure through the slide rail. The moving seat, the installation seat, and the servo motor I are integrally connected. The servo motor I and the driven gear form a meshing structure through the driving gear. At the same time, the driven gear and the installation seat form a nested rotation.

[0016] With the above structure, during use, it can effectively improve the movement stability of the moving seat position, and through the cooperation of the driving gear and the driven gear, control the stability of the adsorption tube in the later stage.

[0017] Preferably, an adsorption tube is installed on the inner surface of the driven gear. A swivel joint is rotatably connected to the upper surface of the adsorption tube. An adsorption seat is installed on the lower surface of the adsorption tube. Vacuum adsorption holes are provided on the inner surface of the adsorption seat. A diversion tube is provided on the side surface of the outer surface of the adsorption seat, and the diversion tube is positioned and installed on the lower surface of the rotating plate.

[0018] With the above structure, during use, it can improve the adsorption stability, and in combination with the rotation of the adsorption tube, control the rotation for use during subsequent adsorption and polishing of silicon carbide.

[0019] Preferably, the driven gear and the adsorption tube form an integral structure. The adsorption tube and the swivel joint form a nested rotation structure. The adsorption tube and the vacuum adsorption holes form a through structure through the adsorption seat. At the same time, the diversion tube is embedded and installed on the lower side of the rotating plate, and the outer surface shape of the diversion tube is an arc structure.

[0020] With the above structure, during use, it can effectively improve the assembly stability of the adsorption tube, and through the swivel joint, improve the connection stability.

[0021] Preferably, a support seat is mounted on the upper surface of the gear seat, a second servo motor is mounted on the upper surface of the support seat, and a rotating member is threadedly connected to the lower surface of the second servo motor through a threaded rod. The rotating member is limited and slid on the inner surface of the support seat. At the same time, a connecting rod is rotatably connected to the outer surface of the rotating member, and a fixing member is rotatably connected to the lower side of the connecting rod. The fixing member is mounted on the outer surface of the moving seat.

[0022] With the above structure, it is convenient to control the position of the support seat during use, so as to adjust the position of the moving seat according to the polishing requirements.

[0023] Preferably, the lower surface of the gear seat and the support seat are embedded and installed. The support seat and the rotating member form a limit lifting structure through the second servo motor, and the rotating member, the connecting rod and the fixing member form a pushing structure with the moving seat.

[0024] With the above structure, the stability of the position adjustment of the moving seat is improved during use, tilting is prevented, and the polishing effect is improved.

[0025] Compared with the prior art, the beneficial effects of the present invention are: 1. The special double-sided polishing machine for silicon carbide based on high-speed high-pressure CMP polishing technology is provided with an adsorption seat assembled with a rotating plate for equiangular setting, which can realize automatic loading and unloading, effectively improve the polishing efficiency of silicon carbide wafers, meet the requirements of production line automation, and cooperate with a mature manipulator mechanism to complete automatic processing of the production line, ensure that no steps are generated on the polished parts, and cooperate with radial back-and-forth movement during polishing to improve the surface accuracy of the product.

[0026] 2. The special double-sided polishing machine for silicon carbide based on high-speed high-pressure CMP polishing technology is provided with a cooling circulation mechanism, which is convenient to work with polishing liquid through a polishing component assembled with a polishing liquid cylinder, and is cooled and circulated through a first cooling water chamber. Moreover, through the cooling disk assembled under the polishing liquid cylinder and the second cooling water chamber opened therein, in cooperation with the use of the water inlet and the water outlet, the cooling circulation effect is improved; further, through the cooperation of the outlet flow channel assembled with the cooling disk and the liquid outlet, water is discharged, and through the inlet flow channel nested outside the outlet flow channel, in cooperation with the liquid inlet, the first cooling water chamber and the cooling disk are cooled by water circulation.

[0027] 3. The special double-sided polishing machine for silicon carbide based on high-speed and high-pressure CMP polishing technology is provided with a limit sliding mechanism. The rotatable rotating plate assembled through the support plate can control the limit movement of silicon carbide by the adsorption seats assembled at equal angles on its upper side. Moreover, in cooperation with the position adjustment of the adsorption seats, it controls the adsorption of silicon carbide through the vacuum adsorption holes, and in cooperation with the use of the adsorption tube by the mounting seat, it controls the up-and-down adjustment of the adsorption tube. Further, the servo motor two assembled through the support seat effectively controls the position of the rotating part, thereby adjusting the moving seat on the fixing part assembled by the connecting rod, improving the adjustment stability of the moving seat, and controlling the position of the adsorbed silicon carbide to improve the polishing effect. Description of the Drawings

[0028] Figure 1 Schematic three-dimensional structure diagram of the polishing machine base of the present invention; Figure 2 Schematic three-dimensional structure diagram of the interior of the polishing machine base of the present invention; Figure 3 Schematic three-dimensional structure diagram of the half-sectional view of the polishing machine base of the present invention; Figure 4 Schematic three-dimensional structure diagram of the half-sectional view of the polishing liquid cylinder of the present invention; Figure 5 Schematic three-dimensional structure diagram of the partial sectional view of the polishing assembly of the present invention; Figure 6 Schematic three-dimensional structure diagram of the cooling disk of the present invention; Figure 7 Schematic three-dimensional structure diagram of the moving seat of the present invention; Figure 8 Schematic three-dimensional structure diagram of the half-sectional view of the mounting seat of the present invention; Figure 9 Schematic three-dimensional structure diagram of the partial sectional view of the rotating plate of the present invention.

[0029] In the figure: 1. Polishing machine base; 2. Control box; 3. Polishing liquid cylinder; 301. Polishing assembly; 302. Cooling water chamber one; 4. Polishing chamber; 5. Dust-proof chamber; 6. Cooling disk; 7. Cooling water chamber two; 8. Water inlet; 9. Water outlet; 10. Central control type reduction gear; 11. Outlet flow channel; 12. Liquid outlet; 13. Liquid inlet; 14. Inlet flow channel; 15. Support plate; ; 16. Gear seat; 17. Driving gear; 18. Rotating plate; 19. Through hole; 20. Slide rail; 21. Moving seat; 22. Mounting seat; 23. Servo motor one; 24. Driving gear; 25. Driven gear; 26. Adsorption tube; 27. Adapter; 28. Adsorption seat; 29. Vacuum adsorption hole; 30. Diversion tube; 31. Support seat; 32. Servo motor two; 33. Rotating part; 34. Connecting rod; 35. Fixing part. Detailed Embodiments

[0030] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the protection scope of the present invention.

[0031] Please refer to Figures 1 - 9 , the present invention provides a technical solution: a special double-sided polishing machine for silicon carbide based on high-speed and high-pressure CMP polishing technology, provided with a polishing machine base 1 for support, and a control box 2 is installed on the side of the polishing machine base 1.

[0032] Embodiment 1: As Figures 1 - 6 shown in this technical solution, the present invention provides the following technical solution: a special double-sided polishing machine for silicon carbide based on high-speed and high-pressure CMP polishing technology, which discloses: including: a polishing liquid cylinder 3, installed on the upper side of the polishing machine base 1, and a polishing chamber 4 is installed on the upper side of the polishing machine base 1, and a dust-proof chamber 5 is installed on the upper side of the polishing chamber 4. At the same time, the polishing liquid cylinder 3 is provided with a cooling circulation mechanism; the polishing liquid cylinder 3 and the polishing machine base 1 form an integrated structure, and the polishing machine base 1 and the polishing chamber 4 form a support structure, and the polishing chamber 4 and the dust-proof chamber 5 form a dust-proof structure; the cooling circulation mechanism includes a polishing component 301 installed on the lower surface of the polishing liquid cylinder 3, and a cooling water chamber 302 is opened in the side wall of the polishing liquid cylinder 3, and a cooling disk 6 is installed on the lower surface of the polishing component 301. At the same time, a cooling water chamber 7 is opened on the inner surface of the cooling disk 6, and a water inlet 8 and a water outlet 9 are opened on the inner surface of the cooling disk 6, and the water inlet 8 and the water outlet 9 are arranged in a staggered height; the polishing liquid cylinder 3 and the polishing component 301 form an integrated structure, and the polishing liquid cylinder 3 and the cooling water chamber 302 form a cooling structure, and at the same time, the cooling disk 6 and the water inlet 8 and the water outlet 9 form a water circulation structure; a central control type reduction gear 10 is installed on the lower side of the inner surface of the polishing machine base 1, and an outlet flow channel 11 is rotatably connected to the inner surface of the central control type reduction gear 10, and a liquid outlet 12 is installed on the lower side of the outlet flow channel 11. At the same time, a liquid inlet 13 is arranged on the side of the outlet flow channel 11, and an inlet flow channel 14 is installed on the outer surface of the liquid inlet 13, and the inlet flow channel 14 is nested on the outer side of the outlet flow channel 11.

[0033] During use, the internal components of the start control box 2 will be activated, and a sufficient amount of polishing liquid will be injected into the polishing liquid cylinder 3 assembled on the polishing machine base 1 to ensure that the liquid height can completely submerge the product during processing. Then, the coolant can be transported through the inlet channel 14 assembled at the bottom of the polishing machine base 1 and its installed liquid inlet 13, and transported to the cooling water chamber 302 of the polishing liquid cylinder 3. In cooperation with the cooling disk 6 assembled by the polishing assembly 301 connected to the polishing liquid cylinder 3, the coolant is transported to the water inlet 8, circulated in the cooling water chamber 7 of the cooling disk 6, and the bottom of the polishing assembly 301 is cooled. Then, it is discharged through the water outlet 9 opened in the cooling disk 6 and discharged through the liquid outlet 12 assembled with the outlet channel 11. In cooperation with the central control type reduction gear 10, by continuously circulating the cooling water, the temperature of the processing surface is controlled within a reasonable range.

[0034] Embodiment 2: As Figure 1 , Figure 2 , Figure 3 , Figure 7 and Figure 8The described technical solution, on the basis of Embodiment 1, also discloses the position adjustment of the adsorption seat 28 for adsorption polishing, and the specific content is as follows: The support plate 15 is installed on the inner surface of the polishing chamber 4, and a gear seat 16 is rotatably connected to the upper side of the support plate 15. The outer surface of the gear seat 16 is meshed with a driving gear 17. At the same time, a rotating plate 18 is installed on the upper side of the gear seat 16. Through holes 19 are formed on the inner surface of the rotating plate 18. At the same time, the rotating plate 18 is provided with a limiting sliding mechanism; The support plate 15 and the polishing chamber 4 form a nested structure, and the support plate 15 and the driving gear 17 form a meshing rotation structure through the gear seat 16. The gear seat 16 and the rotating plate 18 form an integral structure, and the through holes 19 are arranged at equal angles about the central axis of the inner surface of the rotating plate 18; The limiting sliding mechanism includes a slide rail 20 installed on the upper surface of the rotating plate 18. A moving seat 21 is slidably connected to the upper surface of the slide rail 20. An installation seat 22 is installed on the upper surface of the moving seat 21. A first servo motor 23 is installed on the side surface of the outer surface of the installation seat 22. A driving gear 24 is rotatably connected to the surface of the first servo motor 23. The outer surface of the driving gear 24 is meshed with a driven gear 25, and the driven gear 25 is positioned and rotated above the installation seat 22; The rotating plate 18 and the moving seat 21 form a limiting movement structure through the slide rail 20. The moving seat 21 and the installation seat 22 and the first servo motor 23 are integrally connected. The first servo motor 23 and the driven gear 25 form a meshing structure through the driving gear 24. At the same time, the driven gear 25 and the installation seat 22 form a nested rotation; An adsorption pipe 26 is installed on the inner surface of the driven gear 25. A rotary joint 27 is rotatably connected to the upper surface of the adsorption pipe 26. An adsorption seat 28 is installed on the lower surface of the adsorption pipe 26. Vacuum adsorption holes 29 are formed on the inner surface of the adsorption seat 28. A diversion pipe 30 is arranged on the side surface of the outer surface of the adsorption seat 28, and the diversion pipe 30 is positioned and installed on the lower surface of the rotating plate 18; The driven gear 25 and the adsorption pipe 26 form an integral structure. The adsorption pipe 26 and the rotary joint 27 form a nested rotation structure. The adsorption pipe 26 and the vacuum adsorption holes 29 form a through structure through the adsorption seat 28. At the same time, the diversion pipe 30 is embedded and installed on the lower side of the rotating plate 18, and the outer surface shape of the diversion pipe 30 is an arc-shaped structure.

[0035] When polishing silicon carbide, the working position of the moving seat 21 for loading and unloading is controlled. Then, the adsorption tube 26 assembled on the mounting seat 22 is controlled to move upward, driving the adsorption seat 28 and the vacuum adsorption holes 29 installed on the adsorption tube 26 to adsorb and load the silicon carbide. Also, the support plate 15 assembled in the polishing chamber 4 is controlled, and the driving gear 17 is controlled to rotate, adjusting the gear seat 16 to rotate on the support plate 15. Then, the rotating plate 18 is adjusted to rotate a certain angle, and another set of adsorption seats 28 is controlled to hold silicon carbide. After the adsorption seats 28 on the rotating plate 18 all adsorb silicon carbide, the height of the adsorption tube 26 can be adjusted by controlling the mounting seat 22, driving the adapter 27 to move downward synchronously. And the silicon carbide adsorbed by the adsorption seat 28 is controlled to contact the polishing assembly 301. Then, the servo motor one 23 installed on the mounting seat 22 is started to drive the driving gear 24 to rotate, and the driven gear 25 is engaged and adjusted to control the rotation of the adsorption tube 26, thereby driving the silicon carbide to rotate synchronously for polishing. And in cooperation with the adjustment of the rotation of the gear seat 16 by the driving gear 17, the position is alternately polished synchronously to improve the polishing effect. Then, the silicon carbide can be rotated and polished in the polishing liquid cylinder 3, and in cooperation with the use of the diversion tube 30, the polishing liquid flows back from the outer circle to the center, improving the polishing effect.

[0036] Embodiment 3: As Figure 1 , Figure 3 and Figure 9 shown in the technical solution, on the basis of Embodiment 2, the position adjustment and transformation of the moving seat 21 are also disclosed, and the specific content is as follows: A support seat 31 is installed on the upper surface of the gear seat 16, and a servo motor two 32 is installed on the upper surface of the support seat 31. And the lower surface of the servo motor two 32 is threadedly connected with a rotating member 33 through a threaded rod, and the rotating member 33 is limited and slid on the inner surface of the support seat 31. At the same time, a connecting rod 34 is rotatably connected to the outer surface of the rotating member 33, and the lower side of the connecting rod 34 is rotatably connected with a fixing member 35, and the fixing member 35 is installed on the outer surface of the moving seat 21; The lower surface of the gear seat 16 and the support seat 31 are embedded and installed, and the support seat 31 and the rotating member 33 form a limit lifting structure through the servo motor two 32, and the rotating member 33 and the moving seat 21 form a pushing structure through the connecting rod 34 and the fixing member 35.

[0037] When the radial position of the adsorption seat 28 on the moving seat 21 is adjusted, the servo motor two 32 assembled on the support seat 31 is controlled, and the rotating member 33 is controlled to be adjusted by thread limit, thereby controlling the up and down movement of the rotating member 33, driving the connecting rod 34 to control the position of the fixing member 35, and thus adjusting the position of the moving seat 21 installed with the fixing member 35. Then, the adsorption tube 26 assembled on the moving seat 21 can be controlled to slide in the through hole 19 opened on the rotating plate 18, thereby improving the polishing effect and avoiding the generation of steps on the polished part.

[0038] The content not described in detail in this specification belongs to the prior art well-known to those of ordinary skill in the art.

[0039] Although embodiments of the present invention have been shown and described, it will be understood by those of ordinary skill in the art that various changes, modifications, substitutions and variations can be made to these embodiments without departing from the principles and spirit of the present invention, and the scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. A special double-sided polishing machine for silicon carbide based on high-speed and high-pressure CMP polishing technology is provided with a polishing machine base (1) for support, and a control box (2) is installed on the side of the polishing machine base (1); It is characterized in that It includes: A polishing liquid cylinder (3) is installed on the upper side of the polishing machine base (1), and a polishing chamber (4) is installed on the upper side of the polishing machine base (1), and a dust-proof chamber (5) is installed on the upper side of the polishing chamber (4). At the same time, the polishing liquid cylinder (3) is provided with a cooling circulation mechanism; A support plate (15) is installed on the inner surface of the polishing chamber (4), and a gear seat (16) is rotatably connected to the upper side of the support plate (15). The outer surface of the gear seat (16) is meshed with a driving gear (17). At the same time, a rotating plate (18) is installed on the upper side of the gear seat (16), and through holes (19) are opened on the inner surface of the rotating plate (18). At the same time, the rotating plate (18) is provided with a limiting sliding mechanism.

2. The double-sided polishing machine for special use of silicon carbide based on high-speed and high-pressure CMP polishing technology according to claim 1, wherein: The polishing liquid cylinder (3) and the polishing machine base (1) form an integral structure, and the polishing machine base (1) and the polishing chamber (4) form a support structure, and the polishing chamber (4) and the dust-proof chamber (5) form a dust-proof structure.

3. A special double-sided polishing machine for silicon carbide based on high-speed and high-pressure CMP polishing technology according to claim 1, characterized in that: The cooling circulation mechanism includes a polishing component (301) installed on the lower surface of the polishing liquid cylinder (3). A cooling water chamber one (302) is opened in the side wall of the polishing liquid cylinder (3). A cooling disk (6) is installed on the lower surface of the polishing component (301). At the same time, a cooling water chamber two (7) is opened on the inner surface of the cooling disk (6). Inlets (8) and outlets (9) are opened on the inner surface of the cooling disk (6), and the inlets (8) and outlets (9) are arranged in a staggered manner in height; The polishing liquid cylinder (3) and the polishing component (301) form an integral structure, and the polishing liquid cylinder (3) and the cooling water chamber one (302) form a cooling structure. At the same time, the cooling disk (6) and the inlets (8) and outlets (9) form a water circulation structure.

4. A special double-sided polishing machine for silicon carbide based on high-speed and high-pressure CMP polishing technology according to claim 3, characterized in that: A central control type speed reducer (10) is installed on the lower side of the inner surface of the polishing machine base (1). An outlet flow channel (11) is rotatably connected to the inner surface of the central control type speed reducer (10). An outlet (12) is installed on the lower side of the outlet flow channel (11). At the same time, an inlet (13) is arranged on the side of the outlet flow channel (11). An inlet flow channel (14) is installed on the outer surface of the inlet (13), and the inlet flow channel (14) is nested on the outer side of the outlet flow channel (11).

5. The special double-sided polishing machine for silicon carbide based on high-speed and high-pressure CMP polishing technology according to claim 1, characterized in that: The support plate (15) and the polishing chamber (4) form a nested structure, and the support plate (15) and the driving gear (17) form a meshing rotation structure through the gear seat (16). The gear seat (16) and the rotating plate (18) form an integral structure, and the through holes (19) are arranged at equal angles with respect to the central axis of the inner surface of the rotating plate (18).

6. The special double-sided polishing machine for silicon carbide based on high-speed and high-pressure CMP polishing technology according to claim 1, wherein: The described limit sliding mechanism includes a slide rail (20) installed on the upper surface of a rotating plate (18), and a moving seat (21) is slidably connected to the upper surface of the slide rail (20). An installation seat (22) is installed on the upper surface of the moving seat (21). A first servo motor (23) is installed on the side surface of the outer surface of the installation seat (22). A driving gear (24) is rotatably connected to the surface of the first servo motor (23). A driven gear (25) is meshed with the outer surface of the driving gear (24), and the driven gear (25) is positioned and rotated above the installation seat (22). The rotating plate (18) and the moving seat (21) form a limit movement structure through the slide rail (20). The moving seat (21), the installation seat (22), and the first servo motor (23) are integrally connected. The first servo motor (23) and the driven gear (25) form a meshing structure through the driving gear (24). The driven gear (25) and the installation seat (22) form a nested rotation structure.

7. A special double-sided polishing machine for silicon carbide based on high-speed and high-pressure CMP polishing technology according to claim 6, characterized in that: An adsorption tube (26) is installed on the inner surface of the driven gear (25). A swivel joint (27) is rotatably connected to the upper surface of the adsorption tube (26). An adsorption seat (28) is installed on the lower surface of the adsorption tube (26). Vacuum adsorption holes (29) are formed on the inner surface of the adsorption seat (28). A diversion tube (30) is arranged on the side surface of the outer surface of the adsorption seat (28), and the diversion tube (30) is positioned and installed on the lower surface of the rotating plate (18).

8. A dedicated double-sided polishing machine for silicon carbide based on high-speed and high-pressure CMP polishing technology according to claim 7, characterized in that: The driven gear (25) and the adsorption tube (26) form an integrated structure. The adsorption tube (26) and the swivel joint (27) form a nested rotation structure. The adsorption tube (26) and the vacuum adsorption holes (29) form a through structure through the adsorption seat (28). The diversion tube (30) is embedded and installed on the lower side of the rotating plate (18), and the outer surface of the diversion tube (30) has an arc-shaped structure.

9. A special double-sided polishing machine for silicon carbide based on high-speed and high-pressure CMP polishing technology according to claim 1, characterized in that: A support seat (31) is installed on the upper surface of the gear seat (16). A second servo motor (32) is installed on the upper surface of the support seat (31). A rotating part (33) is threadedly connected to the lower surface of the second servo motor (32) through a threaded rod, and the rotating part (33) is limited and slid on the inner surface of the support seat (31). A connecting rod (34) is rotatably connected to the outer surface of the rotating part (33). A fixing part (35) is rotatably connected to the lower side of the connecting rod (34), and the fixing part (35) is installed on the outer surface of the moving seat (21).

10. A special double-sided polishing machine for silicon carbide based on high-speed and high-pressure CMP polishing technology according to claim 9, characterized in that: The gear seat (16) and the support seat (31) are embedded and installed on the lower surface. The support seat (31) and the rotating part (33) form a limit lifting structure through the second servo motor (32). The rotating part (33), the connecting rod (34), and the fixing part (35) form a pushing structure with the moving seat (21).

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