Cutting method of 210R specification silicon wafer, electronic equipment and storage medium
By dividing the cutting process into multiple stages and setting corresponding process parameters, the silicon wafer is cut by forward and reverse reciprocating wiring, the problem of immature cutting process of 210R silicon wafers is solved, and stable production yield and efficient production are achieved.
Patent Information
- Application Number
- CN202510648399.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-05-20
- Publication Date
- 2025-08-01
AI Technical Summary
In the prior art, the cutting process of 210R silicon wafers is immature, the production yield is unstable, which affects the production efficiency.
The cutting process is divided into multiple stages, and the corresponding process parameters are set according to the physical characteristics of the silicon wafer and the diamond wire state, and the cutting is carried out using forward and reverse reciprocating lines to monitor the cutting position in real time to optimize the cutting process.
It improves the cutting quality of the silicon wafer, reduces the disconnection, reduces the depth of the trace and the trace rate, and improves production efficiency.
Smart Images
Figure CN120396148A_ABST
Abstract
Description
Technical Field
[0001] This application relates to the technical field of semiconductor material preparation, and particularly to a cutting method, an electronic device, and a storage medium for 210R standard silicon wafers. Background Art
[0002] Currently, the components made of rectangular silicon wafers in the market have diverse sizes, which not only increases the inventory cost and the impairment caused by price fluctuations, but also increases the operation and management troubles and management costs. However, the large-size design of 210R silicon wafers can effectively reduce the unit cost of components and improve production efficiency. Compared with the traditional 182mm silicon wafers, 210R silicon wafers have significant advantages in power and efficiency, and can significantly save value. In addition, 210R components are unanimously recognized by the upstream and downstream of the industrial chain due to their higher production efficiency, higher power and system value, and lower BOS cost. The development of 210R can also promote the construction of the photovoltaic industry ecosystem. The unified component size can extend the life cycle of existing production capacity and enable the enterprises in the industry to develop continuously and with high quality. However, the current cutting process for 210R silicon wafers is not yet mature, and there are problems with unstable production yield. Summary of the Invention
[0003] To overcome the deficiencies in the prior art, this application provides a cutting method, an electronic device, and a storage medium for 210R standard silicon wafers, which can stabilize the production yield and improve production efficiency.
[0004] In the first aspect, this application provides a cutting method for 210R standard silicon wafers, and the method includes the following steps:
[0005] Dividing the cutting process into multiple stages based on the physical properties of the silicon wafer and the state of the diamond wire during the cutting process; wherein, each stage corresponds to a different interval of the position of the diamond wire during the cutting process of the single-crystal silicon ingot;
[0006] Setting corresponding process parameters for each divided stage;
[0007] Real-time monitoring the cutting position of the diamond wire in the single-crystal silicon ingot, determining the target stage of the current cutting process according to the cutting position, and cutting the single-crystal silicon ingot in a forward and reverse reciprocating wire-walking manner according to the target process parameters corresponding to the target stage to obtain silicon wafers.
[0008] Among them, the cutting process is divided into five stages based on the physical properties of the silicon wafer and the state of the diamond wire during the cutting process; the first stage corresponds to the 0-2.27% interval of the position of the diamond wire during the cutting of the monocrystalline silicon ingot; the second stage corresponds to the 2.27%-6.82% interval of the position of the diamond wire during the cutting of the monocrystalline silicon ingot; the third stage corresponds to the 6.82%-36.36% interval of the position of the diamond wire during the cutting of the monocrystalline silicon ingot; the fourth stage corresponds to the 36.36%-90.91% interval of the position of the diamond wire during the cutting of the monocrystalline silicon ingot; the fifth stage corresponds to the 90.91%-100% interval of the position of the diamond wire during the cutting of the monocrystalline silicon ingot.
[0009] In a possible implementation manner, the process parameters of the first stage are set as follows:
[0010] During the forward wire feeding process, the wire speed first increases uniformly from 0 m / min to 1200 m / min, then decreases uniformly from 1200 m / min to 0 m / min and then reverse wire feeding is carried out; during the reverse wire feeding process, the wire speed changes in the same way as the forward wire feeding process, and the table speed remains 1800 um / min.
[0011] In a possible implementation manner, the process parameters of the second stage are set as follows:
[0012] During the forward wire feeding process, the wire speed first increases uniformly from 0 m / min to 2100 m / min, then decreases uniformly from 2100 m / min to 0 m / min and then reverse wire feeding is carried out; during the reverse wire feeding process, the wire speed changes in the same way as the forward wire feeding process, and the table speed increases uniformly to 2500 um / min.
[0013] In a possible implementation manner, the process parameters of the third stage are set as follows:
[0014] During the forward wire feeding process, the wire speed first increases uniformly from 0 m / min to 2100 m / min, then decreases uniformly from 2100 m / min to 0 m / min and then reverse wire feeding is carried out; during the reverse wire feeding process, the wire speed changes in the same way as the forward wire feeding process, and the table speed increases uniformly to the maximum value of 2900 um / min.
[0015] In a possible implementation manner, the process parameters of the fourth stage are set as follows:
[0016] During the forward wire feeding process, the wire speed first increases uniformly from 0 m / min to 2100 m / min, then decreases uniformly from 2100 m / min to 0 m / min and then reverse wire feeding is carried out; during the reverse wire feeding process, the wire speed changes in the same way as the forward wire feeding process, and the table speed decreases uniformly to 2000 um / min.
[0017] In a possible implementation, the process parameters of the fifth stage are set as follows:
[0018] During the forward wire feeding process, the wire speed first increases uniformly from 0 m / min to the corresponding set value, then decreases uniformly from this set value to 0 m / min and then the reverse wire feeding is carried out; during the reverse wire feeding process, the wire speed changes in the same way as the forward wire feeding process, and the table speed decreases uniformly to the corresponding set value.
[0019] In a possible implementation, the method further includes the following steps:
[0020] Set the tool retraction process strategy; wherein, when the diamond wire is in the 90.91%-100% interval of the cutting position of the single crystal silicon ingot, the table speed is set to 25 um / min; when the diamond wire is in the 9.09%-90.90% interval of the cutting position of the single crystal silicon ingot, the table speed is set to 50 um / min; when the diamond wire is in the 0%-9.09% interval of the cutting position of the single crystal silicon ingot, the table speed is set to 30 um / min;
[0021] After cutting the single crystal silicon ingot according to the process parameters set for each stage, unload the material according to the tool retraction process strategy.
[0022] In a second aspect, the present application provides an electronic device, including: a processor, a memory and a bus, the memory stores machine-readable instructions executable by the processor, when the electronic device runs, the processor communicates with the memory through the bus, and when the machine-readable instructions are executed by the processor, the steps of the cutting method of the 210R specification silicon wafer described in any one of the first aspect are executed.
[0023] In a third aspect, the present application provides a computer-readable storage medium, characterized in that a computer program is stored on the computer-readable storage medium, and when the computer program is run by a processor, the steps of the cutting method of the 210R specification silicon wafer described in any one of the first aspect are executed.
[0024] A cutting method, an electronic device, and a storage medium for 210R standard silicon wafers provided in this embodiment divide the cutting process into multiple stages based on the physical properties of the silicon wafers and the state of the diamond wire during the cutting process. Among them, each stage corresponds to a different interval of the position of the diamond wire during the cutting of the monocrystalline silicon ingot. Corresponding process parameters are set for each divided stage. The cutting position of the diamond wire in the monocrystalline silicon ingot is monitored in real time, and the target stage of the current cutting process is determined according to the cutting position. Then, the monocrystalline silicon ingot is cut in a forward and reverse reciprocating wire-walking manner according to the target process parameters corresponding to the target stage to obtain silicon wafers. Therefore, by accurately and reasonably setting process parameters such as the table speed and wire speed at different cutting positions, the wire breakage situation during the cutting process is effectively reduced, the groove depth and wire mark rate of the silicon wafers are decreased, and the cutting quality of the silicon wafers is improved. BRIEF DESCRIPTION OF THE DRAWINGS
[0025] To more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of the present invention, and thus should not be regarded as limiting the scope. For those of ordinary skill in the art, without creative efforts, other related drawings can also be obtained based on these drawings.
[0026] Figure 1 Shows a flowchart of the cutting method for 210R standard silicon wafers according to an embodiment of the present application;
[0027] Figure 2 Shows a schematic diagram of the cutting position according to an embodiment of the present application;
[0028] Figure 3 Shows a structural block diagram of the electronic device according to an embodiment of the present application. DETAILED DESCRIPTION OF THE EMBODIMENTS
[0029] To make the objectives, technical solutions, and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. It should be understood that the drawings in the present application only serve the purposes of illustration and description, and are not used to limit the protection scope of the present application. In addition, it should be understood that the schematic drawings are not drawn to scale. The flowcharts used in the present application show the operations implemented according to some embodiments of the present application. It should be understood that the operations in the flowchart may not be implemented in sequence, and steps without logical context relationships may be reversed or implemented simultaneously. In addition, those skilled in the art can add one or more other operations to the flowchart or remove one or more operations from the flowchart under the guidance of the content of the present application.
[0030] In addition, the described embodiments are only a part of the embodiments of the present application, rather than all embodiments. The components of the embodiments of the present application generally described and illustrated in the drawings herein can be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of the present application provided in the drawings is not intended to limit the scope of the claimed present application, but merely represents selected embodiments of the present application. All other embodiments obtained by those skilled in the art based on the embodiments of the present application without creative efforts fall within the scope of protection of the present application.
[0031] It should be noted that the term "including" will be used in the embodiments of the present application to indicate the existence of the features stated hereinafter, but does not exclude the addition of other features.
[0032] In view of the technical problems proposed in the background art, the present application provides a cutting method, an electronic device and a storage medium for 210R specification silicon wafers, which can stably produce the yield and improve the production efficiency.
[0033] In one embodiment, referring to the accompanying drawings of the specification Figure 1 a cutting method for 210R specification silicon wafers provided by the present application, the method includes the following steps:
[0034] S1. Divide the cutting process into multiple stages based on the physical properties of the silicon wafer and the state of the diamond wire during the cutting process; wherein, each stage corresponds to a different interval of the position of the diamond wire during the cutting process of the monocrystalline silicon ingot;
[0035] S2. Set corresponding process parameters for each divided stage;
[0036] S3. Real-time monitor the cutting position of the diamond wire in the monocrystalline silicon ingot, determine the target stage of the current cutting process according to the cutting position, and cut the monocrystalline silicon ingot in a reciprocating manner in both forward and reverse directions according to the target process parameters corresponding to the target stage to obtain silicon wafers.
[0037] Specifically, in step S1, the different stages of the 210R silicon wafer cutting process are mainly divided based on the change of the physical properties of the silicon wafer and the state of the diamond wire during the cutting process. In one embodiment, referring to the accompanying drawings of the specification Figure 2 the cutting process is divided into five stages.
[0038] The first stage corresponds to the 0-2.27% interval of the position of the diamond wire during the cutting process of the monocrystalline silicon ingot; this stage is the knife-in stage. The diamond wire just starts to contact and cut the harder monocrystalline silicon ingot. To avoid the wire breaking away from the groove and causing wire twisting, which will lead to the loss of the monocrystalline silicon ingot, a lower wire speed and table speed are required to slowly cut in, and at the same time, a smaller slurry flow rate is coordinated. Therefore, this stage is separately divided, and specific parameter settings are used to ensure the stability of the cutting start.
[0039] The second stage corresponds to the interval of 2.27% - 6.82% of the position of the diamond wire during the cutting process of the single-crystal silicon ingot; the diamond wire has entered the interior of the single-crystal silicon ingot, and the cutting environment is relatively improved compared to the knife-in stage. The cutting wire speed and table speed can be gradually increased. During this stage, the depth of the single-crystal silicon ingot being cut gradually deepens, and the cutting conditions are constantly changing. It is necessary to gradually increase the wire speed and table speed to adapt to the cutting process. Therefore, they are combined into a single stage range for parameter adjustment.
[0040] The third stage corresponds to the interval of 6.82% - 36.36% of the position of the diamond wire during the cutting process of the single-crystal silicon ingot; during this stage, all the wires on the wire mesh are new wires participating in the cutting. The cutting ability of the new wires is relatively strong, allowing the table speed to reach the maximum value to make full use of the cutting performance of the new wires and improve the cutting efficiency. The cutting state in this stage is significantly different from that before and after, so it is separately divided and corresponding higher table speed and other parameter settings are adopted.
[0041] The fourth stage corresponds to the interval of 36.36% - 90.91% of the position of the diamond wire during the cutting process of the single-crystal silicon ingot; this stage belongs to the secondary utilization stage of the cutting wire. Since the diamond wire has been used in the early stage, its cutting ability has decreased. To ensure the cutting quality, the table speed needs to be gradually decreased while the wire speed remains unchanged. Based on the changes in the state of the cutting wire and the requirements for cutting quality, it is divided into an independent stage for targeted parameter adjustment.
[0042] The fifth stage corresponds to the interval of 90.91% - 100% of the position of the diamond wire during the cutting process of the single-crystal silicon ingot; this stage is close to the end of the cutting. To reduce the loss of the diamond wire caused by abnormal material lifting, during the cycle, the wire pay-off amount needs to be 200 - 1300 m less than the wire rewinding amount to reasonably use the diamond wire. The cutting purpose and parameter settings in this stage are different from those in the previous stage, so it is separately divided and specific wire pay-off, wire rewinding amounts, and gradually decreasing table speed and other parameter settings are adopted.
[0043] In step S2, set the process parameters for the first stage: during the forward wire feeding process, the wire speed first increases uniformly from 0 m / min to 1200 m / min, then decreases uniformly from 1200 m / min to 0 m / min and then reverse wire feeding is performed; during the reverse wire feeding process, the wire speed changes in the same manner as the forward wire feeding process, and the table speed is maintained at 1800 um / min. Set the process parameters for the second stage: during the forward wire feeding process, the wire speed first increases uniformly from 0 m / min to 2100 m / min, then decreases uniformly from 2100 m / min to 0 m / min and then reverse wire feeding is performed; during the reverse wire feeding process, the wire speed changes in the same manner as the forward wire feeding process, and the table speed uniformly increases to 2500 um / min. Set the process parameters for the third stage: during the forward wire feeding process, the wire speed first increases uniformly from 0 m / min to 2100 m / min, then decreases uniformly from 2100 m / min to 0 m / min and then reverse wire feeding is performed; during the reverse wire feeding process, the wire speed changes in the same manner as the forward wire feeding process, and the table speed uniformly increases to the maximum value of 2900 um / min. Set the process parameters for the fourth stage: during the forward wire feeding process, the wire speed first increases uniformly from 0 m / min to 2100 m / min, then decreases uniformly from 2100 m / min to 0 m / min and then reverse wire feeding is performed; during the reverse wire feeding process, the wire speed changes in the same manner as the forward wire feeding process, and the table speed uniformly decreases to 2000 um / min. Set the process parameters for the fifth stage: during the forward wire feeding process, the wire speed first increases uniformly from 0 m / min to the corresponding set value, then decreases uniformly from the set value to 0 m / min and then reverse wire feeding is performed; during the reverse wire feeding process, the wire speed changes in the same manner as the forward wire feeding process, and the table speed uniformly decreases to the corresponding set value.
[0044] Further, divide each stage into at least one step step according to the cutting position of the single-crystal silicon ingot by the cutting wire, and set the corresponding process parameters for each step step. The process parameters include wire speed, table speed, wire feeding amount, wire returning amount, left and right tensions, flow rate, and cycle. Specifically:
[0045] The starting position of step 1 in the first stage is -1 mm (the diamond wire has not contacted the single-crystal silicon ingot), and the corresponding process parameters are wire speed 720 m / min, table speed 1500 um / min, wire feeding amount 750 m, wire returning amount 720 m, left and right tensions 3.7, flow rate 190 L / min, and cycle 0.45;
[0046] The second stage includes steps step2 - step4. The starting position of Step2 is 5, the wire speed is 1200 m / min, the table speed is 1800 um / min, the wire feeding amount is 750 m, the wire retracting amount is 720 m, the left - right tension is 3.7, the flow rate is 190 L / min, and the cycle is 0.72; The starting position of Step3 is 10, the wire speed is 1800 m / min, the table speed is 2000 um / min, the wire feeding amount is 520 m, the wire retracting amount is 490 m, the left - right tension is 3.7, the flow rate is 190 L / min, and the cycle is 1.36; The starting position of Step4 is 15, the wire speed is 2100 m / min, the table speed is 2500 um / min, the wire feeding amount is 530 m, the wire retracting amount is 482 m, the left - right tension is 3.7, the flow rate is 210 L / min, and the cycle is 1.53;
[0047] The third stage includes steps step5 - step8. The starting position of Step5 is 20, the wire speed is 2100 m / min, the table speed is 2900 um / min, the wire feeding amount is 550 m, the wire retracting amount is 486 m, the left - right tension is 3.7, the flow rate is 220 L / min, and the cycle is 1.50; The starting position of Step6 is 40, the wire speed is 2100 m / min, the table speed is 2900 um / min, the wire feeding amount is 570 m, the wire retracting amount is 487 m, the left - right tension is 3.7, the flow rate is 220 L / min, and the cycle is 1.48; The starting position of Step7 is 60, the wire speed is 2100 m / min, the table speed is 2900 um / min, the wire feeding amount is 575 m, the wire retracting amount is 492 m, the left - right tension is 3.7, the flow rate is 220 L / min, and the cycle is 1.47; The starting position of Step8 is 80, the wire speed is 2100 m / min, the table speed is 2900 um / min, the wire feeding amount is 580 m, the wire retracting amount is 496 m, the left - right tension is 3.7, the flow rate is 220 L / min, and the cycle is 1.46.
[0048] The fourth stage includes steps step9-step16. The starting position of Step9 is 100, wire speed is 2100 m / min, table speed is 2800 um / min, wire feeding amount is 590 m, wire retracting amount is 501 m, left and right tension is 3.7, flow rate is 210 L / min, and cycle is 1.44; The starting position of Step10 is 130, wire speed is 2100 m / min, table speed is 2600 um / min, wire feeding amount is 620 m, wire retracting amount is 503 m, left and right tension is 3.7, flow rate is 210 L / min, and cycle is 1.41; The starting position of Step11 is 150, wire speed is 2100 m / min, table speed is 2500 um / min, wire feeding amount is 630 m, wire retracting amount is 506 m, left and right tension is 3.7, flow rate is 210 L / min, and cycle is 1.40; The starting position of Step12 is 160, wire speed is 2100 m / min, table speed is 2400 um / min, wire feeding amount is 650 m, wire retracting amount is 508 m, left and right tension is 3.7, flow rate is 210 L / min, and cycle is 1.38; The starting position of Step13 is 170, wire speed is 2100 m / min, table speed is 2300 um / min, wire feeding amount is 660 m, wire retracting amount is 510 m, left and right tension is 3.7, flow rate is 210 L / min, and cycle is 1.37; The starting position of Step14 is 180, wire speed is 2100 m / min, table speed is 2200 um / min, wire feeding amount is 680 m, wire retracting amount is 512 m, left and right tension is 3.7, flow rate is 210 L / min, and cycle is 1.35; The starting position of Step15 is 190, wire speed is 2100 m / min, table speed is 2100 um / min, wire feeding amount is 700 m, wire retracting amount is 516 m, left and right tension is 3.7, flow rate is 210 L / min, and cycle is 1.33; The starting position of Step16 is 200, wire speed is 2100 m / min, table speed is 2000 um / min, wire feeding amount is 720 m, wire retracting amount is 520 m, left and right tension is 3.7, flow rate is 210 L / min, and cycle is 1.31.
[0049] The fifth stage includes steps step17-step22. The starting position of Step17 is 208, the wire speed is 2100 m / min, the table speed is 1800 um / min, the wire feeding amount is 700 m, the wire returning amount is 900 m, the left and right tensions are 3.7, the flow rate is 210 L / min, and the cycle is 1.07; the starting position of Step18 is 212, the wire speed is 2100 m / min, the table speed is 1300 um / min, the wire feeding amount is 800 m, the wire returning amount is 1000 m, the left and right tensions are 3.7, the flow rate is 210 L / min, and the cycle is 0.97; the starting position of Step19 is 216, the wire speed is 1800 m / min, the table speed is 1000 um / min, the wire feeding amount is 850 m, the wire returning amount is 1250 m, the left and right tensions are 3.7, the flow rate is 210 L / min, and the cycle is 0.75; the starting position of Step20 is 218, the wire speed is 1600 m / min, the table speed is 500 um / min, the wire feeding amount is 950 m, the wire returning amount is 1550 m, the left and right tensions are 3.7, the flow rate is 200 L / min, and the cycle is 0.58; the starting position of Step21 is 219, the wire speed is 1500 m / min, the table speed is 130 um / min, the wire feeding amount is 1050 m, the wire returning amount is 1800 m, the left and right tensions are 3.7, the flow rate is 200 L / min, and the cycle is 0.48; the starting position of Step22 is 220, the wire speed is 1500 m / min, the table speed is 80 um / min, the wire feeding amount is 1200 m, the wire returning amount is 2500 m, the left and right tensions are 3.7, the flow rate is 200 L / min, and the cycle is 0.38.
[0050] Among them, the wire speed represents the running speed of the diamond wire when cutting the monocrystalline silicon ingot; the wire feeding amount represents the length of the diamond wire from the wire returning wheel to the wire feeding wheel within a cycle; the wire returning amount represents the length of the diamond wire from the wire feeding wheel to the wire returning wheel within a cycle; the cutting flow rate represents the flow rate value ejected from the mortar pipe during cutting. The wire feeding calculation method is (cycle wire feeding / cycle + (60 / cycle - wire speed / 60 / acceleration * 2 - cutting pause time * 2) * wire speed / 60) / 2), and the wire returning calculation method is (cycle wire feeding - new wire supply amount / cycle). The cycle reflects the number of back-and-forth cutting times within 1 minute. In this embodiment, the acceleration and deceleration time of the diamond wire running is 5.0 s; the cutting pause time is 0.2 s. Thus, the table speed, wire speed, wire feeding and returning of each step Step can be well matched.
[0051] In step S3, the cutting position of the diamond wire in the monocrystalline silicon ingot is monitored in real time, and the corresponding process parameters are obtained to perform cutting according to the process parameters set for each step Step.
[0052] It should be noted that a tool withdrawal process strategy is also set in this application. Among them, when the diamond wire is in the range of 90.91%-100% of the cutting position of the single-crystal silicon ingot, the table speed is set to 25 um / min; when the diamond wire is in the range of 9.09%-90.90% of the cutting position of the single-crystal silicon ingot, the table speed is set to 50 um / min; when the diamond wire is in the range of 0%-9.09% of the cutting position of the single-crystal silicon ingot, the table speed is set to 30 um / min, the flow rate is 180 L / min, and the wire speed is 5 m / min. After cutting the single-crystal silicon ingot according to the process parameters set in each stage, unloading is carried out according to the tool withdrawal process strategy.
[0053] Through the reasonable connection of the process parameters of each step in this application, the wear of the diamond wire is balanced, the wear on the silicon wafer caused by the diamond wire commutation is reduced, the pattern depth is effectively reduced, the generation of wire marks is reduced, and the flatness and smoothness of the silicon wafer are increased, thereby improving the cutting quality of the silicon wafer.
[0054] Table 1 is a summary comparison of the experimental data of this application and the original process. The yield is effectively improved, the additional cutting rate is reduced, and the production efficiency is improved.
[0055]
[0056]
[0057] Table 1
[0058] Among them, the existing process is as follows: The starting position of Step1 is -1mm, the wire speed is 720m / min, the table speed is 1500um / min, the wire feeding amount is 886m, the wire returning amount is 789m, the left and right tensions are 3.7, the flow rate is 190L / min, and the cycle is 0.4; The starting position of Step2 is 5mm, the wire speed is 1200m / min, the table speed is 1800um / min, the wire feeding amount is 773m, the wire returning amount is 611m, the left and right tensions are 3.7, the flow rate is 190L / min, and the cycle is 0.75; The starting position of Step3 is 10mm, the wire speed is 1800m / min, the table speed is 2200um / min, the wire feeding amount is 860m, the wire returning amount is 711m, the left and right tensions are 3.7, the flow rate is 190L / min, and the cycle is 0.96; The starting position of Step4 is 15mm, the wire speed is 2100m / min, the table speed is 2400um / min, the wire feeding amount is 735m, the wire returning amount is 609m, the left and right tensions are 3.7, the flow rate is 190L / min, and the cycle is 1.23; The starting position of Step5 is 20mm, the wire speed is 2100m / min, the table speed is 2600um / min, the wire feeding amount is 682m, the wire returning amount is 556m, the left and right tensions are 3.7, the flow rate is 210L / min, and the cycle is 1.31; For Step6, the starting position is 40mm, the wire speed is 2100m / min, the table speed is 2600um / min, the wire feeding amount is 676m, the wire returning amount is 537m, the left and right tensions are 3.7, the flow rate is 210L / min, and the cycle is 1.33; The starting position of Step7 is 60mm, the wire speed is 2100m / min, the table speed is 2600um / min, the wire feeding amount is 658m, the wire returning amount is 522m, the left and right tensions are 3.7, the flow rate is 210L / min, and the cycle is 1.36; The starting position of Step8 is 80mm, the wire speed is 2100m / min, the table speed is 2600um / min, the wire feeding amount is 646m, the wire returning amount is 512m, the left and right tensions are 3.7, the flow rate is 210L / min, and the cycle is 1.38; The starting position of Step9 is 100mm, the wire speed is 2100m / min, the table speed is 2600um / min, the wire feeding amount is 648m, the wire returning amount is 510m, the left and right tensions are 3.7, the flow rate is 210L / min, and the cycle is 1.38; The starting position of Step10 is 130mm, the wire speed is 2100m / min, the table speed is 2600um / min, the wire feeding amount is 631m, the wire returning amount is 495m, the left and right tensions are 3.7, the flow rate is 210L / min, and the cycle is 1.41; The starting position of Step11 is 150mm, the wire speed is 2100m / min, the table speed is 2550um / min, the wire feeding amount is 620m, the wire returning amount is 485m, the left and right tensions are 3.7, the flow rate is 210L / min, and the cycle is 1.43; The starting position of Step12 is 160mm, the wire speed is 2100m / min, the table speed is 2450um / min, the wire feeding amount is 630m, the wire returning amount is 493m, the left and right tensions are 3.7, flow rate 210 L / min, cycle 1.41; The starting position of Step13 is 170 mm, wire speed 2100 m / min, table speed 2400 um / min, wire feeding amount 635 m, wire retracting amount 490 m, left and right tension 3.7, flow rate 210 L / min, cycle 1.41; The starting position of Step14 is 180 mm, wire speed 2100 m / min, table speed 2300 um / min, wire feeding amount 628 m, wire retracting amount 487 m, left and right tension 3.7, flow rate 210 L / min, cycle 1.42; The starting position of Step15 is 190 mm, wire speed 2100 m / min, table speed 2200 um / min, wire feeding amount 628 m, wire retracting amount 487 m, left and right tension 3.7, flow rate 210 L / min, cycle 1.42; The starting position of Step16 is 200 mm, wire speed 2100 m / min, table speed 2000 um / min, wire feeding amount 497 m, wire retracting amount 639 m, left and right tension 3.7, flow rate 210 L / min, cycle 1.40; The starting position of Step17 is 208 mm, wire speed 2100 m / min, table speed 1800 um / min, wire feeding amount 812 m, wire retracting amount 1144 m, left and right tension 3.7, flow rate 210 L / min, cycle 0.91; The starting position of Step18 is 212 mm, wire speed 2100 m / min, table speed 1300 um / min, wire feeding amount 1074 m, wire retracting amount 1576 m, left and right tension 3.7, flow rate 210 L / min, cycle 0.70; The starting position of Step19 is 216 mm, wire speed 1800 m / min, table speed 1000 um / min, wire feeding amount 1048 m, wire retracting amount 1629 m, left and right tension 3.7, flow rate 210 L / min, cycle 0.60; The starting position of Step20 is 218 mm, wire speed 1600 m / min, table speed 500 um / min, wire feeding amount 1039 m, wire retracting amount 1582 m, left and right tension 3.7, flow rate 200 L / min, cycle 0.55; The starting position of Step21 is 219 mm, wire speed 1500 m / min, table speed 130 um / min, wire feeding amount 1012 m, wire retracting amount 1843 m, left and right tension 3.7, flow rate 200 L / min, cycle 0.48; The starting position of Step22 is 220 mm, wire speed 1500 m / min, table speed 80 um / min, wire feeding amount 960 m, wire retracting amount 1895 m, left and right tension 3.7, flow rate 200 L / min, cycle 0.48..
[0059] As can be seen, the 210R silicon wafer cutting method provided in this application achieves significant results in cutting quality, production efficiency, and cost control through parameter and process optimization. The optimized cutting process ensures a smoother cutting process, significantly increasing output per unit time. Precisely controlling parameters such as cutting position, table speed, wire speed, return line, and flow rate effectively reduces wire breakage, reduces grain depth and line mark rate, and improves the flatness and smoothness of the silicon wafer.
[0060] Based on the same concept of the present invention, the attached Figure 3 As shown, an embodiment of the present application provides a structure of an electronic device 300, which includes: at least one processor 301, at least one network interface 304 or other user interface 303, a memory 305, and at least one communication bus 302. The communication bus 302 is used to achieve connection and communication between these components. The electronic device 300 optionally includes a user interface 303, including a display (for example, a touch screen, LCD, CRT, holographic imaging (Holographic) or projection (Projector), etc.), a keyboard or a pointing device (for example, a mouse, trackball (trackball), touchpad or touch screen, etc.).
[0061] The memory 305 may include a read-only memory and a random access memory, and provides instructions and data to the processor 301. A portion of the memory 305 may also include a non-volatile random access memory (NVRAM).
[0062] In some embodiments, the memory 305 stores the following elements, executable modules, or data structures, or a subset or extended set thereof:
[0063] Operating system 3051, including various system programs for implementing various basic services and processing hardware-based tasks;
[0064] The application module 3052 includes various application programs, such as a launcher, a media player, a browser, etc., which are used to implement various application services.
[0065] In an embodiment of the present application, by calling the program or instructions stored in the memory 305, the processor 301 is used to execute steps in a method for cutting 210R specification silicon wafers, which can stabilize the production yield and improve production efficiency.
[0066] The present application also provides a computer-readable storage medium, on which a computer program is stored. When the computer program is executed by a processor, the steps in the method for cutting 210R specification silicon wafers are executed.
[0067] Specifically, the storage medium can be a general storage medium, such as a removable disk, a hard disk, etc. When the computer program on the storage medium is run, it can execute the cutting method of the 210R specification silicon wafer described above.
[0068] In the embodiments provided in the present application, it should be understood that the disclosed devices and methods can be implemented in other ways. The device embodiments described above are only illustrative. For example, the division of units is only a logical function division. In actual implementation, there may be other division methods. For another example, multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the displayed or discussed coupling or direct coupling or communication connection between each other can be through some communication interfaces. The indirect coupling or communication connection of devices or units can be in electrical, mechanical or other forms.
[0069] The units described as separate components may or may not be physically separated. The components shown as units may or may not be physical units, that is, they can be located in one place, or they can be distributed to multiple network units. Some or all of the units can be selected according to actual needs to achieve the purpose of the solution of this embodiment.
[0070] In addition, each functional unit in the embodiments provided in the present application can be integrated in a processing unit, or each unit can exist physically alone, or two or more units can be integrated in one unit.
[0071] If the function is implemented in the form of a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the present application, in essence, or the part that contributes to the prior art, or a part of this technical solution, can be embodied in the form of a software product. The computer software product is stored in a storage medium and includes several instructions to enable a computer device (which can be a personal computer, a server, or a network device, etc.) to execute all or part of the steps of the methods in various embodiments of the present application. The aforementioned storage medium includes: various media such as USB flash drives, mobile hard disks, read-only memory (ROM), random access memory (RAM), magnetic disks, or optical discs that can store program codes.
[0072] Finally, it should be noted that the above embodiments are only specific implementation manners of the present application, used to illustrate the technical solutions of the present application, rather than limiting it. The protection scope of the present application is not limited thereto. Although the present application has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that any person skilled in the art within the technical scope disclosed by the present application can still modify the technical solutions recorded in the foregoing embodiments, or can easily think of changes, or perform equivalent replacements on some of the technical features; and these modifications, changes or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the embodiments of the present application. All should be covered within the protection scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.
Claims
1. A cutting method for 210R specification silicon wafers, characterized in that, The method includes the following steps: Dividing the cutting process into multiple stages based on the physical characteristics of the silicon wafer and the state of the diamond wire during the cutting process; wherein, each stage corresponds to a different interval of the position of the diamond wire during the cutting of the single-crystal silicon ingot; Setting corresponding process parameters for each divided stage; Real-time monitoring of the cutting position of the diamond wire in the single-crystal silicon ingot, determining the target stage of the current cutting process according to the cutting position, and cutting the single-crystal silicon ingot in a forward and reverse reciprocating wire-walking manner according to the target process parameters corresponding to the target stage to obtain silicon wafers.
2. The cutting method of a 210R specification silicon wafer according to claim 1, characterized in that, Wherein, Dividing the cutting process into five stages based on the physical characteristics of the silicon wafer and the state of the diamond wire during the cutting process; the first stage corresponds to the 0-2.27% interval of the position of the diamond wire during the cutting of the single-crystal silicon ingot; the second stage corresponds to the 2.27%-6.82% interval of the position of the diamond wire during the cutting of the single-crystal silicon ingot; the third stage corresponds to the 6.82%-36.36% interval of the position of the diamond wire during the cutting of the single-crystal silicon ingot; the fourth stage corresponds to the 36.36%-90.91% interval of the position of the diamond wire during the cutting of the single-crystal silicon ingot; the fifth stage corresponds to the 90.91%-100% interval of the position of the diamond wire during the cutting of the single-crystal silicon ingot.
3. The cutting method of a 210R specification silicon wafer according to claim 2, characterized in that, Setting the process parameters of the first stage in the following manner: During the forward wire-walking process, the wire speed first increases uniformly from 0 m / min to 1200 m / min, then decreases uniformly from 1200 m / min to 0 m / min and then reverse wire-walking is performed; during the reverse wire-walking process, the wire speed changes in the same manner as the forward wire-walking process, and the table speed remains at 1800 um / min.
4. The cutting method of a 210R specification silicon wafer according to claim 2, characterized in that, Setting the process parameters of the second stage in the following manner: During the forward wire-walking process, the wire speed first increases uniformly from 0 m / min to 2100 m / min, then decreases uniformly from 2100 m / min to 0 m / min and then reverse wire-walking is performed; during the reverse wire-walking process, the wire speed changes in the same manner as the forward wire-walking process, and the table speed uniformly increases to 2500 um / min.
5. The cutting method of a 210R specification silicon wafer according to claim 2, wherein, Setting the process parameters of the third stage in the following manner: During the forward wire-walking process, the wire speed first increases uniformly from 0 m / min to 2100 m / min, then decreases uniformly from 2100 m / min to 0 m / min and then reverse wire-walking is performed; during the reverse wire-walking process, the wire speed changes in the same manner as the forward wire-walking process, and the table speed uniformly increases to the maximum value of 2900 um / min.
6. The cutting method of a 210R specification silicon wafer according to claim 2, characterized in that, Setting the process parameters of the fourth stage in the following manner: During the forward wire-walking process, the wire speed first increases uniformly from 0 m / min to 2100 m / min, then decreases uniformly from 2100 m / min to 0 m / min and then reverse wire-walking is performed; during the reverse wire-walking process, the wire speed changes in the same manner as the forward wire-walking process, and the table speed uniformly decreases to 2000 um / min.
7. The cutting method of a 210R specification silicon wafer according to claim 2, wherein Setting the process parameters of the fifth stage in the following manner: During the forward wire feeding process, the wire speed first increases uniformly from 0 m / min to the corresponding set value, then decreases uniformly from this set value to 0 m / min and then the reverse wire feeding is carried out; during the reverse wire feeding process, the change mode of the wire speed is the same as that in the forward wire feeding process, and the table speed decreases uniformly to the corresponding set value.
8. The cutting method of a 210R specification silicon wafer according to claim 2, wherein, The method further includes the following steps: Set the tool withdrawal process strategy; among them, when the diamond wire is in the range of 90.91%-100% of the cutting position of the single-crystal silicon ingot, the table speed is set to 25 um / min; when the diamond wire is in the range of 9.09%-90.90% of the cutting position of the single-crystal silicon ingot, the table speed is set to 50 um / min; when the diamond wire is in the range of 0%-9.09% of the cutting position of the single-crystal silicon ingot, the table speed is set to 30 um / min; After cutting the single-crystal silicon ingot according to the process parameters set for each stage, unload the material according to the tool withdrawal process strategy.
9. An electronic device, characterized in that, Including: A processor, a memory and a bus, the memory stores machine-readable instructions executable by the processor. When the electronic device runs, the processor communicates with the memory through the bus. When the machine-readable instructions are executed by the processor, the steps of the cutting method of the 210R specification silicon wafer as described in any one of claims 1 to 8 are executed.
10. A computer-readable storage medium, characterized in that, A computer program is stored on the computer-readable storage medium. When the computer program is run by the processor, the steps of the cutting method of the 210R specification silicon wafer as described in any one of claims 1 to 8 are executed.