Preparation method of anti-dazzle glass and anti-dazzle glass

Abstract

The invention discloses a preparation method of anti-dazzle glass and the anti-dazzle glass, and the preparation method of the anti-dazzle glass comprises the following steps: attaching a mask layer on a to-be-etched surface of a glass substrate, the mask layer comprising a through hole array formed by a plurality of rows of through holes arranged in parallel; each column of the through hole array comprises a plurality of through holes which are not completely identical in diameter size and identical in circle center distance size of the adjacent through holes; etching the surface, attached with the mask layer, of the glass substrate; removing the mask layer; and carrying out chemical polishing on one surface of the glass substrate after the mask layer is removed.

Description

Technical Field

[0001] The present invention relates to the technical field of anti-glare glass, and particularly to a preparation method of anti-glare glass and anti-glare glass. Background Art

[0002] Anti-glare glass is a kind of functional glass widely used in consumer electronic products. Its anti-glare property can reduce the reflection and scattering of ambient light on the display screen, thereby making the display effect clearer. Therefore, AG anti-glare glass is widely used on the display screens of electronic devices such as vehicle-mounted displays, laptop computers, tablet computers, smartphones, and televisions.

[0003] With the continuous development and popularization of the electronic product market, the demand for anti-glare glass is also increasing. Traditional anti-glare glass preparation technologies usually involve chemically etching or physically sandblasting the surface of a glass substrate and then chemically polishing it. However, traditional anti-glare glass preparation technologies have many defects, such as high preparation costs, poor environmental friendliness, and difficulties in balancing anti-glare effects and sparkle. Especially when the anti-glare performance of the glass is very strong, the sparkle value on the glass surface is very large, which easily causes visual fatigue for users. These all limit its wide application.

[0004] Although the Chinese patent with the publication number CN116675439B has solved the technical problem of being unable to balance high anti-glare performance and low sparkle, there is still the problem of moiré. How to have both low sparkle and high anti-glare performance while also solving the moiré problem has become an urgent technical problem in the industry. Summary of the Invention

[0005] In order to at least solve the above technical problems, the purpose of the present invention is to provide a preparation method of anti-glare glass and anti-glare glass, which has high anti-glare performance while eliminating sparkle and moiré.

[0006] To achieve the above purpose, the preparation method of anti-glare glass provided in this application includes:

[0007] Attaching a mask layer, attaching a mask layer to the surface to be etched of the glass substrate, and the mask layer includes a through-hole array composed of multiple parallel columns of through-holes;

[0008] Each column of the through-hole array includes multiple through-holes with different diameter sizes and the same center distance between adjacent through-holes;

[0009] Chemical etching, etching the side of the glass substrate attached with the mask layer;

[0010] Remove the mask layer. After the chemical etching is completed, remove the mask layer to obtain a glass substrate with independent concave particles uniformly distributed on the surface;

[0011] Chemical polishing. Perform chemical polishing on one side of the glass substrate after removing the mask layer;

[0012] The chemical polishing stops when adjacent concave particles are polished until they intersect and share the same edge, and the transmission haze of the surface of the glass substrate after removing the mask layer reaches 5% - 85%.

[0013] Further, the diameter size range of the through - holes is 5 - 50μm, and the center - to - center distance of adjacent through - holes in each column of the through - hole array is 20 - 120μm;

[0014] There is no overlapping area between any through - holes on the through - hole array, and the distance between adjacent columns is not greater than cos30° times the center - to - center distance;

[0015] The difference between the maximum diameter size and the minimum diameter size of the through - holes on the mask layer is not less than 2μm.

[0016] Further, the difference between the maximum diameter size and the minimum diameter size of the through - holes on the mask layer is not less than 2μm and not greater than 10μm.

[0017] Further, the diameter sizes of the through - holes on the mask layer are normally distributed or approximately normally distributed with the average value of a single maximum diameter size and a single minimum diameter size as the central value.

[0018] Further, the mask layer at least includes a photosensitive layer;

[0019] The through - hole array is arranged on the photosensitive layer.

[0020] Further, the mask layer further includes a metal layer. When the mask layer includes a metal layer, the metal layer is attached to the glass substrate, and the photosensitive layer is arranged on the side of the metal layer facing away from the glass substrate.

[0021] Further, when the mask layer includes a metal layer, before the chemical etching step, it further includes:

[0022] Etch the metal layer to etch out a through - hole array on the metal layer.

[0023] Further, the chemical etching includes etching the glass substrate located in the through - holes on the side with the mask layer attached, etching until the depth size of the particles on the surface of the glass substrate is 0.5 - 30μm, and the maximum depth size of the particles is 5 - 30μm.

[0024] Further, chemical polishing further includes polishing the glass substrate to a depth dimension range of the particles of 0.3 - 25 μm, the difference between the maximum depth and the minimum depth dimension of the particles being 0.5 - 15 μm, the diameter dimension range of the particles being 20 - 150 μm, and the difference between the maximum diameter dimension and the minimum diameter dimension of the particles being 3 - 70 μm.

[0025] Further, the chemical etching uses an acidic etching solution or an alkaline etching solution;

[0026] The chemical polishing uses an acidic polishing solution or an alkaline polishing solution.

[0027] Further, the acidic etching solution includes, by mass parts: 10 - 15 parts of ammonium bifluoride, 2 - 5 parts of potassium bifluoride, 30 - 40 parts of glycerol, and 30 - 40 parts of deionized water.

[0028] Further, the alkaline etching solution includes, by mass parts: 45 - 60 parts of sodium hydroxide, 20 - 30 parts of glycerol, and 40 - 55 parts of deionized water.

[0029] Further, the acidic polishing solution includes, by mass parts: 8 - 12 parts of hydrofluoric acid, 8 - 12 parts of sulfuric acid, and 60 - 80 parts of deionized water.

[0030] Further, the alkaline polishing solution includes, by mass parts: 45 - 60 parts of sodium hydroxide and 40 - 55 parts of deionized water.

[0031] To achieve the above object, the anti-glare glass provided in this application includes: being made by using the preparation method of the above anti-glare glass.

[0032] The preparation method of the anti-glare glass and the anti-glare glass in the embodiments of the present invention greatly reduce the flash point of the anti-glare glass under the same anti-glare performance, solve the technical problem of the conflict between high anti-glare performance and low flash point, and have high surface roughness and anti-fingerprint performance; while having high anti-glare performance, it also eliminates the flash point and moiré patterns, enhancing the market competitiveness of the terminal; when the etching solution and / or the polishing solution use an alkaline solution, compared with the existing acidic solutions of hydrofluoric acid type, it is more environmentally friendly, because hydrofluoric acid is volatile and easily causes personal injury to operators, and fluoride ions are highly toxic, and the usual treatment methods are also more complex; when using an alkaline solution of sodium hydroxide type, sodium hydroxide has low volatility, and the waste liquid treatment is also simpler. Its waste liquid can be neutralized with acid, and the products are water and precipitates, which is very beneficial to environmental protection.

[0033] Other features and advantages of this application will be described in the subsequent description, and part of them will become obvious from the description, or be understood by implementing this application. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] The accompanying drawings are used to provide a further understanding of the present application, and constitute a part of the specification. Together with the embodiments of the present application, they are used to explain the present application, and do not constitute a limitation to the present application. In the accompanying drawings:

[0035] Figure 1 is a schematic flow chart of a method for preparing anti-glare glass according to an embodiment of the present application;

[0036] Figure 2 is a schematic diagram of a through-hole array according to an embodiment of the present application;

[0037] Figure 3 is a three-dimensional view of anti-glare glass according to an embodiment of the present application;

[0038] Figure 4 is a side view of anti-glare glass according to an embodiment of the present application;

[0039] Figure 5 is a top view of anti-glare glass according to an embodiment of the present application;

[0040] Figure 6 is an SEM image of anti-glare glass according to an embodiment of the present application. Detailed Embodiments

[0041] The following describes the preferred embodiments of the present application with reference to the accompanying drawings. It should be understood that the preferred embodiments described herein are only used to illustrate and explain the present application, and are not used to limit the present application.

[0042] The embodiments of the present application will be described in more detail below with reference to the accompanying drawings. Although some embodiments of the present application are shown in the drawings, it should be understood that the present application can be implemented in various forms and should not be construed as limited to the embodiments set forth herein. On the contrary, these embodiments are provided to more thoroughly and completely understand the present application. It should be understood that the drawings and embodiments of the present application are only for exemplary purposes and are not used to limit the protection scope of the present application.

[0043] As used herein, the term "including" and its variations are open-ended, i.e., "including but not limited to". The term "based on" means "at least partially based on". The term "one embodiment" means "at least one embodiment"; the term "another embodiment" means "at least one additional embodiment"; the term "some embodiments" means "at least some embodiments". The relevant definitions of other terms will be given in the following description.

[0044] It should be noted that the concepts such as "first" and "second" that may be mentioned in the present application are only used to distinguish different devices, components or parts, and are not used to limit the order of functions performed by these devices, components or parts or their interdependent relationships.

[0045] It should be noted that the modifications of "one" and "multiple" that may be mentioned in this application are illustrative rather than restrictive. Those skilled in the art should understand that unless otherwise clearly specified in the context, it should be understood as "one or more". "Multiple" should be understood as two or more.

[0046] The preparation method of the anti-glare glass of the present application includes:

[0047] Attaching a mask layer, attaching a mask layer on the surface to be etched of the glass substrate, and the mask layer includes a via array composed of multiple parallel columns of vias;

[0048] Each column of the via array includes multiple vias with different diameter sizes and the same center distance between adjacent vias;

[0049] Chemical etching, etching the side of the glass substrate attached with the mask layer;

[0050] Removing the mask layer, removing the mask layer after the chemical etching is completed to obtain a glass substrate with independent concave particles evenly distributed on the surface;

[0051] Chemical polishing, chemically polishing the side of the glass substrate after removing the mask layer;

[0052] The chemical polishing stops when adjacent concave particles are polished until they intersect and share the same edge, and the transmission haze of the surface of the glass substrate after polishing and removing the mask layer reaches 5% - 85%.

[0053] Example 1 Figure 1 It is a schematic flow chart of the preparation method of the anti-glare glass in the embodiment of the present application. The preparation method of the anti-glare glass in the embodiment of the present invention is used for surface treatment of the anti-glare function of the glass, such as anti-glare glass for vehicles, anti-glare glass on the surface of mobile terminals, etc.

[0054] First, in step 101, attach a mask layer, attach a mask layer on the surface to be etched of the glass substrate, and the mask layer includes a via array composed of multiple parallel columns of vias.

[0055] In an exemplary embodiment, according to needs, before attaching the mask layer, it also includes cleaning the surface of the glass substrate, and after cleaning, removing surface stains and water stains of the glass substrate, etc., until the requirements for attaching the mask layer are met.

[0056] In an exemplary embodiment, a mask layer is attached to the surface to be etched of the glass substrate. For example, when there is only one surface to be etched, the mask layer is attached to the surface of the glass substrate that needs to be etched. For example, the mask layer is attached to the front side of the glass substrate or the back side of the glass substrate. Of course, if necessary, the mask layer can be attached to both the front and back sides of the glass substrate, that is, when both the front and back sides of the glass substrate need to be etched.

[0057] In an exemplary embodiment, generally, anti-glare glass only has technical requirements for the front and / or back sides, and the side surfaces of the glass substrate do not affect the optical parameters and performance. Therefore, the surfaces of the glass substrate in the method for preparing anti-glare glass in the embodiments of the present application refer to the front and back sides.

[0058] In an exemplary embodiment, the mask layer includes a via array composed of multiple columns of vias arranged in parallel. Each column of the via array includes multiple vias with diameters that are not completely the same, and the center-to-center distance of adjacent vias is the same. It can be understood that multiple continuous vias are provided on each column of the via array, and the centers of each via are located on the same straight line, and the center-to-center distance of adjacent vias is the same.

[0059] In an exemplary embodiment, each column of the via array includes multiple vias with diameters that are not completely the same. It can be understood that there are cases where the diameters of the vias on each column of the via array are not completely the same, that is, the diameters of the vias on each column can be partially the same or partially different.

[0060] In an exemplary embodiment, each column of the via array on the mask layer is in a parallel relationship with each other.

[0061] In an exemplary embodiment, the diameter size range of the vias is 5 - 50 μm.

[0062] In an exemplary embodiment, the center-to-center distance of adjacent vias on each column of the via array is 20 - 120 μm.

[0063] In an exemplary embodiment, adjacent vias on the same column do not intersect or touch each other, that is, there is no overlapping part.

[0064] In an exemplary embodiment, the distance between adjacent columns of the via array is not greater than cos30° times the center-to-center distance. In this case, the distance between adjacent via arrays is taken as an example to be maintained at cos30° times the center-to-center distance for explanation.

[0065] In an exemplary embodiment, the spacing between adjacent columns can be understood as the centers of the through-holes on each column being located on the same straight line. The spacing between adjacent columns is the spacing between the straight lines formed by adjacent centers, and these straight lines formed by adjacent centers are parallel to each other.

[0066] In an exemplary embodiment, the difference between the maximum diameter size and the minimum diameter size of the through-holes on the mask layer is not less than 2 μm.

[0067] In an exemplary embodiment, the maximum difference between the diameter sizes of the through-holes on the mask layer is not less than 2 μm and not greater than 10 μm.

[0068] In an exemplary embodiment, the diameter sizes of the through-holes on the mask layer are normally distributed or approximately normally distributed with the average value of a single maximum diameter size and a single minimum diameter size as the central value.

[0069] In an exemplary embodiment, for example, the diameter of the through-hole is 7 - 13 μm, and the diameter value gradient of the through-hole is 1 μm, that is, the diameter values of the through-holes are: 7 μm, 8 μm, 9 μm, 10 μm, 11 μm, 12 μm, and 13 μm. It can be understood that the diameter change range between adjacent through-holes on each column of the through-hole array is controlled within 1 μm, and it is normally distributed or approximately normally distributed with 10 μm as the central value, where the aperture ratio of 9 - 11 μm is about 60%, the aperture ratio of 7 - 8 μm is about 20%, and the aperture ratio of 12 - 13 μm is about 20%.

[0070] In an exemplary embodiment, the diameter sizes of the through-holes on the mask layer are divided into multiple equal parts with the maximum diameter size and the minimum diameter size as the end values, and the number of through-holes in each equal part accounts for the same proportion of the total number of through-holes on the mask layer; for example, the maximum diameter size of the through-holes on the mask layer is 13 μm, and the minimum diameter size is 7 μm. The through-holes are divided into a total of 7 equal parts of 7 μm, 8 μm, 9 μm, 10 μm, 11 μm, 12 μm, and 13 μm according to 7 - 13 μm, and the number of through-holes in each equal part accounts for the same proportion of the total number on the mask layer. It can be understood that the number of 7-μm holes is the same as the number of holes of 8 μm, 9 μm, 10 μm, 11 μm, 12 μm, and 13 μm.

[0071] In an exemplary embodiment, the mask layer at least includes a photosensitive layer; it can be understood that the mask layer may only have a photosensitive layer according to needs. Of course, when necessary, the mask layer may also include other film layers besides the photosensitive layer.

[0072] In an exemplary embodiment, the mask layer further includes a metal layer, that is, the mask layer includes a photosensitive layer and a metal layer.

[0073] In an exemplary embodiment, when the mask layer includes a metal layer, the metal layer is attached to the glass substrate, and the photosensitive layer is disposed on a side of the metal layer facing away from the glass substrate.

[0074] In an exemplary embodiment, a via hole array is disposed on the photosensitive layer; the via hole array on the photosensitive layer can be realized by an exposure and development method.

[0075] In an exemplary embodiment, when the mask layer includes a photosensitive layer and a metal layer, the metal layer is, for example, a metal chromium layer or a composite layer containing metal chromium.

[0076] In an exemplary embodiment, when the mask layer includes a photosensitive layer and a metal layer, for example, a metal layer is deposited on the surface to be etched of the glass substrate by a vacuum evaporation method. In this case, taking the metal layer as a metal chromium layer as an example, the photosensitive layer is explained by taking a photoresist layer as an example.

[0077] In an exemplary embodiment, a metal chromium layer is deposited on the surface to be etched of the glass substrate by a vacuum evaporation method, and then a photoresist is spin-coated on the surface of the metal chromium layer. The thickness of the metal chromium layer is 200 nm, and the thickness of the photoresist is 2 μm; the metal chromium layer is deposited on the surface to be etched of the glass substrate by a planar continuous vacuum evaporation machine.

[0078] In an exemplary embodiment, after a via hole array is formed on the photosensitive layer by an exposure and development method, a corresponding via hole array is formed at a corresponding position on the metal chromium layer by etching the via hole array on the photosensitive layer on the metal chromium layer with a chromium etchant; it can be understood that the via hole array on the photosensitive layer is transferred to the metal chromium layer.

[0079] In an exemplary embodiment, the chromium etchant is composed of ammonium cerium nitrate, glacial acetic acid, and deionized water, wherein the mass fraction of ammonium cerium nitrate is 16%wt, the mass fraction of glacial acetic acid is 3%wt, and the mass fraction of deionized water is 81%wt, and the etching time is 3 min.

[0080] Step 102, chemical etching, etching the side of the glass substrate attached with the mask layer.

[0081] In an exemplary embodiment, before chemical etching, it further includes attaching an anti-corrosion layer to the non-etched surface, that is, when the mask layer is only attached to one side of the glass substrate, an anti-corrosion layer is attached to the opposite side of the glass substrate. The anti-corrosion layer is an acid-resistant and / or alkali-resistant corrosion layer; for example, when the etchant is an acid etchant, the anti-corrosion layer is an acid-resistant corrosion layer or a corrosion layer with both acid and alkali resistance. Similarly, when the etchant is an alkaline etchant, the anti-corrosion layer is an alkali-resistant corrosion layer or an anti-corrosion layer with both acid and alkali resistance.

[0082] In an exemplary embodiment, after the through-hole array on the mask layer is set up and an anti-corrosion layer is provided on the non-etching surface, it further includes surface activation treatment of the etching surface with the mask layer attached.

[0083] In an exemplary embodiment, before the step of surface activation, it further includes: providing an anti-corrosion layer on the non-etching surface.

[0084] In an exemplary embodiment, the anti-corrosion layer is an acid-resistant and / or alkali-resistant corrosion layer; that is, the specific anti-corrosion layer can be selected according to the activation solution used during surface activation. For example, if an acidic solution is used for surface activation, an acid-resistant or an acid- and alkali-resistant anti-corrosion layer is correspondingly selected. In an exemplary embodiment, surface activation can be understood as using hydrofluoric acid to remove a layer of passivation layer on the glass surface, for example, removing a passivation layer with a thickness of 0.1 - 3 μm, which makes subsequent etching faster.

[0085] In an exemplary embodiment, for surface activation, for example, a solution with a mass ratio of hydrofluoric acid of 3%wt is used to perform surface activation treatment on the glass substrate surface with the mask layer attached by the spraying method, with a treatment temperature of 35°C and a treatment time of 60 s.

[0086] In an exemplary embodiment, chemical etching is performed on the glass substrate, and the chemical etching is etching on the side with the mask layer attached.

[0087] In an exemplary embodiment, since only the area with through-holes on the mask layer on the side with the mask layer attached is exposed, the chemical etching is etching on the glass substrate within the through-holes.

[0088] In an exemplary embodiment, the etching solution enters the area with through-holes in the mask layer on the glass substrate, and concave particles with a certain depth are etched.

[0089] In an exemplary embodiment, the etching depth dimension is 0.5 - 30 μm.

[0090] In an exemplary embodiment, of course, the etching depth does not exceed the thickness of the glass substrate, and generally the etching depth does not exceed half of the thickness of the glass substrate.

[0091] In an exemplary embodiment, the etching time using an acidic etching solution or an alkaline etching solution during etching is 5 min - 30 min.

[0092] In an exemplary embodiment, the acidic etching solution in this application refers to a fluorine-containing acidic etching solution, for example, composed of ammonium bifluoride, potassium bifluoride, glycerol, and deionized water; the alkaline etching solution is, for example, composed of sodium hydroxide, glycerol, and deionized water.

[0093] In an exemplary embodiment, the etching depth can be adjusted by adjusting the concentration of the etching solution and / or the etching time.

[0094] In an exemplary embodiment, the etching solution is a fluorine-containing acidic etching solution or an alkaline etching solution.

[0095] In an exemplary embodiment, the temperature of the acidic etching solution is 20°C - 22°C.

[0096] In an exemplary embodiment, the temperature of the alkaline etching solution is 115°C - 125°C.

[0097] In an exemplary embodiment, after chemical etching, the particle profile morphology is "U"-shaped, and the particle depth is 0.5 μm - 30 μm.

[0098] In an exemplary embodiment, as needed, during chemical etching, the chemical etching can be stopped when the maximum particle depth reaches 5 - 30 μm.

[0099] Step 103, removing the mask layer. After the chemical etching is completed, the mask layer is removed to obtain a glass substrate with independent concave particles uniformly distributed on the surface.

[0100] In an exemplary embodiment, when etching the glass substrate in the through-hole and the etching depth reaches the requirement, the chemical etching is stopped, and the mask layer on the surface where the etching is completed is removed.

[0101] In an exemplary embodiment, removing the mask layer includes removing the photosensitive layer and the metal chromium layer. A solution with a sodium hydroxide mass fraction of 5%wt is used to remove the photoresist, and the treatment time is 1 min; then a chromium etching solution is used to remove the metal chromium layer, and the treatment time is 5 min.

[0102] In an exemplary embodiment, at this time, pits appear on the surface of the glass substrate on the side where the mask layer is removed in the through-hole area. These pits are the concave particles, and the positions of the concave particles are consistent with the holes on the mask layer. The cross-section of the concave particles is "U"-shaped; in the non-through-hole area, it is the unetched area. At this time, the surface of the glass substrate is uniformly distributed with multiple independent concave particles; at this time, the unetched area is a raised platform area relative to the concave particles.

[0103] Step 104, chemical polishing. The side of the glass substrate after removing the mask layer is chemically polished.

[0104] In an exemplary embodiment, after removing the mask layer, the side of the glass substrate after removing the mask layer is chemically polished, that is, the entire surface of this side is chemically polished, because the corrosion of the glass substrate by the polishing solution causes the diameter of the concave particles to gradually increase.

[0105] In an exemplary embodiment, during chemical polishing, the concave particles on the basis of chemical etching will gradually be polished to expand the scope; taking the concave particles as circles for explanation, the radius range of each concave particle area will gradually expand until it is tangent to the adjacent circular particles, and then gradually intersect.

[0106] In an exemplary embodiment, since chemical polishing is performed on the entire glass substrate on this surface, the original non-concave particle areas are also within the scope of polishing during chemical polishing. When the glass substrate on this surface is completely polished and etched, when the adjacent circular particles intersect with each other and there is no planar protrusion, that is, when the adjacent circular particles expand to share the same edge, after the adjacent concave particles are polished to intersect and share the same edge during chemical polishing, it further includes continuing to polish the surface of the glass substrate after removing the mask layer. Polishing is stopped when the transmittance haze of the surface of the glass substrate after removing the mask layer after polishing reaches 5% - 85%.

[0107] In an exemplary embodiment, chemical polishing further includes polishing the glass substrate to a depth dimension range of the particles of 0.3 - 25 μm, the difference between the maximum depth and the minimum depth dimension of the particles is 0.5 - 15 μm, the diameter dimension range of the particles is 20 - 150 μm, and the difference between the maximum diameter dimension and the minimum diameter dimension of the particles is 3 - 70 μm.

[0108] In an exemplary embodiment, the diameter of the particles can be understood as the diameter of the largest circumscribed circle of the particles, because the particles are polygons, such as quadrilaterals, pentagons, hexagons, and heptagons, etc.

[0109] In an exemplary embodiment, the above chemical etching is performed using an acidic etching solution or an alkaline etching solution.

[0110] In an exemplary embodiment, the above chemical polishing is performed using an acidic polishing solution or an alkaline polishing solution.

[0111] In an exemplary embodiment, the acidic etching solution is a mixed solution of ammonium bifluoride, potassium bifluoride, glycerol, and deionized water.

[0112] In an exemplary embodiment, the acidic etching solution includes, by mass parts: 10 - 15 parts of ammonium bifluoride, 2 - 5 parts of potassium bifluoride, 30 - 40 parts of glycerol, and 30 - 40 parts of deionized water.

[0113] In an exemplary embodiment, the acidic polishing solution is a mixed solution of hydrofluoric acid, sulfuric acid, and deionized water.

[0114] In an exemplary embodiment, the acidic polishing solution comprises, by mass parts: 8 to 12 parts of hydrofluoric acid, 8 to 12 parts of sulfuric acid, and 60 to 80 parts of deionized water.

[0115] In an exemplary embodiment, during chemical polishing, the temperature of the acidic polishing solution is 30°C to 33°C.

[0116] In an exemplary embodiment, the alkaline etching solution is a mixed solution of sodium hydroxide, glycerol, and deionized water.

[0117] In an exemplary embodiment, the alkaline etching solution comprises, by mass parts: 45 to 60 parts of sodium hydroxide, 20 to 30 parts of glycerol, and 40 to 55 parts of deionized water.

[0118] In an exemplary embodiment, the alkaline polishing solution is a mixed solution of sodium hydroxide and deionized water.

[0119] In an exemplary embodiment, the alkaline polishing solution comprises, by mass parts: 45 to 60 parts of sodium hydroxide and 40 to 55 parts of deionized water.

[0120] In an exemplary embodiment, during chemical polishing, the temperature of the alkaline polishing solution is 115°C to 125°C.

[0121] In an exemplary embodiment, the anti-glare glass obtained by the preparation method of the anti-glare glass according to the embodiments of the present application can greatly reduce the flash point value of the anti-glare glass, and can obtain excellent properties of small flash point and no moiré while having high anti-glare performance.

[0122] Example 2 In an exemplary embodiment, Example 2 is a specific embodiment of the preparation method of the anti-glare glass according to the embodiments of the present application.

[0123] In an exemplary embodiment, in order to make a horizontal comparison of each embodiment, all glass substrates are selected as Corning 2320. Corning 2320 in the present application is only used for illustration and is not used for limitation; that is, the alkaline etching solution or fluorine-containing acidic etching solution in the embodiments of the present application is used for etching glass products, or it can be understood that glass products that can be corroded by sodium hydroxide solution or fluorine-containing acidic solution can all use the alkaline etching solution or fluorine-containing acidic etching solution in the present application to make anti-glare glass.

[0124] In an exemplary embodiment, first, a 200-nm-thick chromium metal film layer is deposited on one side of a clean glass by vacuum evaporation, and then a 2-μm-thick photoresist is coated on the surface of the chromium film layer by roll coating.

[0125] In an exemplary embodiment, the chromium metal film layer is formed by a planar continuous vacuum evaporation machine with a power of 5 KW and a linear velocity of 7 mm / s.

[0126] In an exemplary embodiment, then a pattern is preset on the surface of the photoresist by exposure and development, and the pattern distribution rules are as follows: a via array composed of multiple parallel columns of vias.

[0127] In an exemplary embodiment, the diameter of the vias is 5 - 7 μm, that is, the difference between the maximum diameter and the minimum diameter of the vias is 2 μm, and the number of vias is evenly distributed among 5 μm, 5.5 μm, 6 μm, 6.5 μm, and 7 μm, that is, the number of vias is the same when the diameter is 5 μm, 5.5 μm, 6 μm, 6.5 μm, and 7 μm.

[0128] In an exemplary embodiment, the center distance between adjacent vias on each column of the via array composed of multiple columns of vias is 20 μm.

[0129] In an exemplary embodiment, the vertical distance between adjacent columns on the via array is 20 times cos30°, that is, 17.32 μm.

[0130] In an exemplary embodiment, a chromium etchant is used to transfer the pattern on the surface of the photoresist to the metal chromium layer, and the corresponding hole pattern array is exposed on the metal chromium layer until the corresponding hole pattern array is exposed on the glass substrate.

[0131] In an exemplary embodiment, the chromium etchant is composed of ammonium cerium nitrate, glacial acetic acid, and deionized water, wherein the mass fraction of ammonium cerium nitrate is 16% wt, the mass fraction of glacial acetic acid is 3% wt, and the mass fraction of deionized water is 81% wt. The etching time is 3 min.

[0132] In an exemplary embodiment, an acid-resistant PET protective film is attached to the side of the glass substrate without the mask layer, and a solution with a mass fraction of 3% wt of hydrofluoric acid is used to perform surface activation treatment on the side of the glass substrate with the mask layer by the spraying method. The treatment temperature is 35 °C and the treatment time is 60 s.

[0133] In an exemplary embodiment, a fluorine-containing acidic etchant is used to chemically etch the side of the glass substrate with the mask layer, and the glass substrate is cleaned after etching.

[0134] In an exemplary embodiment, the etchant includes, by mass, 10 parts of ammonium bifluoride, 2 parts of potassium bifluoride, 40 parts of glycerol, and 40 parts of deionized water. The etching time is 5 min and the etchant temperature is 20 °C.

[0135] In an exemplary embodiment, after chemical etching, the particle depth on the glass substrate is 0.5 - 5 μm.

[0136] In an exemplary embodiment, after chemical etching, the maximum particle depth on the glass substrate is 5 μm, and the maximum difference in depth dimensions between particles is 4.5 μm.

[0137] In an exemplary embodiment, a solution with a 5%wt sodium hydroxide mass ratio is used to remove the photoresist, and the treatment time is 1 min.

[0138] In an exemplary embodiment, a chromium etchant is used to remove the metal chromium layer, and the treatment time is 5 min.

[0139] In an exemplary embodiment, chemical polishing is performed on the side of the glass substrate from which the mask layer has been removed, and the polishing is stopped when the transmittance haze reaches 5%.

[0140] In an exemplary embodiment, the polishing solution includes, by mass parts: 12 parts of hydrofluoric acid, 12 parts of sulfuric acid, and 60 parts of deionized water. The temperature of the polishing solution is 30 °C, and the polishing time is 35 min.

[0141] In an exemplary embodiment, the surface particle depth of the antiglare glass obtained after polishing is 0.3 - 0.8 μm, the maximum difference in depth dimensions between particles is 0.5 μm, the particle diameter is 20 - 35.9 μm, and the maximum difference in diameter dimensions between particles is 15.9 μm.

[0142] In an exemplary embodiment, for the antiglare glass of the embodiment of the present application, the specular gloss at a 60-degree angle: 70.1 GU; DOI: 1.6%; haze: 5%; roughness: 0.167 μm; flash point: none; moiré pattern: none.

[0143] In an exemplary embodiment, as needed, the mask layer may only include a photosensitive layer, that is, only a photoresist is provided without using a metal chromium layer; it can be understood that when the metal chromium layer is not provided, there is naturally no need to use a chromium etchant to etch the metal chromium layer.

[0144] In an exemplary embodiment, as needed, after the chemical etching step is completed and before chemical polishing, cleaning of the glass substrate may also be included.

[0145] Example 3 In an exemplary embodiment, first, a 200-nm-thick chromium metal film layer is deposited on one side of a clean glass by vacuum evaporation, and then a 2-μm-thick photoresist is coated on the surface of the chromium film layer by roll coating.

[0146] In an exemplary embodiment, the chromium metal film layer is formed by a planar continuous vacuum evaporation machine with a power of 5 Kw and a linear velocity of 7 mm / s.

[0147] In an exemplary embodiment, then a pattern is preset on the photoresist surface by exposure and development, and the pattern distribution rules are as follows: a via array composed of multiple columns of vias arranged in parallel.

[0148] In an exemplary embodiment, the diameter of the via is 5 - 7 μm, that is, the difference between the maximum diameter and the minimum diameter of the via is 2 μm, and the number of vias is evenly distributed among 5 μm, 5.5 μm, 6 μm, 6.5 μm, and 7 μm, that is, the number of vias is the same when the diameter is 5 μm, 5.5 μm, 6 μm, 6.5 μm, and 7 μm.

[0149] In an exemplary embodiment, the center distance between adjacent vias on each column of the via array composed of multiple columns of vias is 20 μm.

[0150] In an exemplary embodiment, the vertical distance between adjacent columns on the via array is 20 times cos30°, that is, 17.32 μm.

[0151] In an exemplary embodiment, a chromium etching solution is used to transfer the pattern on the photoresist surface to the surface of the chromium film layer, exposing the glass substrate at the corresponding pattern positions.

[0152] In an exemplary embodiment, the chromium etching solution is composed of ammonium cerium nitrate, glacial acetic acid, and deionized water, wherein the mass fraction of ammonium cerium nitrate is 16% wt, the mass fraction of glacial acetic acid is 3% wt, and the mass fraction of deionized water is 81% wt, and the etching time is 3 min.

[0153] In an exemplary embodiment, a acid-resistant PET protective film is attached to the side of the glass substrate without the mask layer, and a solution with a mass fraction of 3% wt of hydrofluoric acid is used to perform surface activation treatment on the side of the glass substrate with the mask layer by the spraying method, with a treatment temperature of 35 °C and a treatment time of 60 s.

[0154] In an exemplary embodiment, a fluorine-containing acidic etching solution is used to chemically etch the side of the glass substrate with the mask layer, and after etching, the glass substrate is cleaned.

[0155] In an exemplary embodiment, the etching solution includes, by mass parts: 12 parts of ammonium bifluoride, 3 parts of potassium bifluoride, 38 parts of glycerol, and 38 parts of deionized water, with an etching time of 5 min and an etching solution temperature of 21 °C.

[0156] In an exemplary embodiment, after chemical etching, the particle depth on the glass substrate is 4.5 - 7.5 μm.

[0157] In an exemplary embodiment, after chemical etching, the maximum particle depth on the glass substrate is 7.5 μm, and the maximum difference in depth dimensions between particles is 3 μm.

[0158] In an exemplary embodiment, a solution with a 5%wt sodium hydroxide mass ratio is used to remove the photoresist, and the treatment time is 1 min.

[0159] In an exemplary embodiment, a chromium etchant is used to remove the metal chromium layer, and the treatment time is 5 min.

[0160] In an exemplary embodiment, the glass substrate with the mask layer removed is chemically polished until the transmission haze reaches 10.7% and then stopped.

[0161] In an exemplary embodiment, the polishing liquid includes, by mass parts: 10 parts of hydrofluoric acid, 10 parts of sulfuric acid, and 68 parts of deionized water. The temperature of the polishing liquid is 30 °C, and the polishing time is 30 min.

[0162] In an exemplary embodiment, the surface particle depth of the anti-glare glass obtained after polishing is 1.5 - 2.6 μm, and the maximum difference in depth dimensions between particles is 1.1 μm; the particle diameter is 20.4 - 32.6 μm, and the maximum difference in diameter dimensions between particles is 12.2 μm.

[0163] In an exemplary embodiment, for the anti-glare glass of the embodiment of the present application, the specular gloss at a 60-degree angle: 44.9 GU; DOI: 0.9%; haze: 10.7%; surface roughness: 0.196 μm; flash point: none; moiré: none.

[0164] Example 4

[0165] In an exemplary embodiment, first, a 200-nm-thick chromium metal film layer is deposited on one side of a clean glass by vacuum evaporation, and then a 2-μm-thick photoresist is coated on the surface of the chromium film layer by roll coating.

[0166] In an exemplary embodiment, the chromium metal film layer is deposited by a planar continuous vacuum evaporation machine with a power of 5 Kw and a linear speed of 7 mm / s.

[0167] In an exemplary embodiment, then a preset pattern is formed on the surface of the photoresist by exposure and development, and the pattern distribution rule is as follows: a via array composed of multiple parallel columns of vias.

[0168] In an exemplary embodiment, the diameter of the through hole is 5 - 7 μm, that is, the difference between the maximum diameter and the minimum diameter of the through hole is 2 μm, and the number of through holes is evenly distributed among 5 μm, 5.5 μm, 6 μm, 6.5 μm, and 7 μm, that is, the number of through holes is the same when the diameter is 5 μm, 5.5 μm, 6 μm, 6.5 μm, and 7 μm.

[0169] In an exemplary embodiment, the center distance between adjacent through holes on each column of the through hole array composed of multiple columns of through holes is 20 μm.

[0170] In an exemplary embodiment, the vertical distance between adjacent columns on the through hole array is 20 times cos30°, that is, 17.32 μm.

[0171] In an exemplary embodiment, a chromium etching solution is used to transfer the pattern on the photoresist surface to the chromium film layer surface, exposing the glass substrate at the corresponding pattern positions.

[0172] In an exemplary embodiment, the chromium etching solution is composed of ammonium cerium nitrate, glacial acetic acid, and deionized water, where the mass fraction of ammonium cerium nitrate is 16%wt, the mass fraction of glacial acetic acid is 3%wt, the mass fraction of deionized water is 81%wt, and the etching time is 3 min.

[0173] In an exemplary embodiment, an acid-resistant PET protective film is attached to the side of the glass substrate without the mask layer, and a solution with a mass fraction of 3%wt of hydrofluoric acid is used to perform surface activation treatment on the side of the glass substrate with the mask layer by the spraying method, with a treatment temperature of 35 °C and a treatment time of 60 s.

[0174] In an exemplary embodiment, a solution with a mass fraction of 5%wt of sodium hydroxide is used to remove the photoresist, and the treatment time is 1 min.

[0175] In an exemplary embodiment, the etching solution includes, by mass parts: 14 parts of ammonium bifluoride, 4 parts of potassium bifluoride, 33 parts of glycerol, and 33 parts of deionized water, with an etching time of 6.5 min and an etching solution temperature of 22 °C.

[0176] In an exemplary embodiment, after chemical etching, the particle depth on the glass substrate is 5.9 - 8.2 μm. In an exemplary embodiment, the maximum particle depth is 8.2 μm, and the maximum difference in depth dimensions between particles is 2.3 μm.

[0177] In an exemplary embodiment, a chromium etching solution is used to remove the metal chromium layer, and the treatment time is 5 min.

[0178] In an exemplary embodiment, a polishing solution is used to perform chemical polishing on the side of the glass substrate from which the mask layer has been removed, and the polishing is stopped when the transmission haze reaches 22.4%.

[0179] In an exemplary embodiment, the polishing liquid comprises, by mass parts: 10 parts of hydrofluoric acid, 8 parts of sulfuric acid, 73 parts of deionized water, the temperature of the polishing liquid is 33 °C, and the polishing time is 21 min.

[0180] In an exemplary embodiment, the particle depth is 1.9 - 3.8 μm, and the maximum difference in the depth dimension between particles is 1.9 μm; the particle diameter is 20.1 - 29.5 μm, and the maximum difference in the particle diameter dimension is 9.4 μm.

[0181] In an exemplary embodiment, for the anti-glare glass of the embodiment of the present application, the specular gloss at a 60-degree angle: 26.7 GU; DOI: 0.7%; haze: 22.4%; surface roughness: 0.261 μm; flash point: none; moiré: none.

[0182] Example 5 In an exemplary embodiment, first, a chromium metal film layer with a thickness of 200 nm is deposited on one side of a clean glass by vacuum evaporation, and then a layer of photoresist with a thickness of 2 μm is coated on the surface of the chromium film layer by roll coating.

[0183] In an exemplary embodiment, the chromium metal film layer is deposited using a planar continuous vacuum evaporation machine with a power of 5 Kw and a linear speed of 7 mm / s.

[0184] In an exemplary embodiment, then a preset pattern is formed on the surface of the photoresist by exposure and development, and the pattern distribution rules are as follows: a via array composed of multiple columns of vias arranged in parallel.

[0185] In an exemplary embodiment, the diameter of the vias is 5 - 7 μm, and the diameter value gradient of the vias is 0.5 μm, that is, the diameter values of the vias are 5 μm, 5.5 μm, 6 μm, 6.5 μm, and 7 μm. The via diameters are normally distributed or approximately normally distributed with a central value of 6 μm, where the proportion of 6-μm apertures is about 50%, the proportion of 5-μm apertures is about 10%, the proportion of 5.5-μm apertures is about 15%, the proportion of 6.5-μm apertures is about 15%, and the proportion of 7-μm apertures is about 10%.

[0186] In an exemplary embodiment, the center distance between adjacent holes in each column of the via array is 20 μm.

[0187] In an exemplary embodiment, the vertical distance between adjacent columns in the via array is 20 times cos30°, that is, 17.32 μm.

[0188] In an exemplary embodiment, a chromium etchant is used to transfer the pattern on the surface of the photoresist to the surface of the chromium film layer, exposing the glass substrate at the corresponding pattern positions.

[0189] In an exemplary embodiment, the chromium etching solution is composed of ammonium cerium nitrate, glacial acetic acid, and deionized water, wherein the mass fraction of ammonium cerium nitrate is 16% wt, the mass fraction of glacial acetic acid is 3% wt, and the mass fraction of deionized water is 81% wt, and the etching time is 3 min.

[0190] In an exemplary embodiment, an acid-resistant PET protective film is attached to the side of the glass substrate without the mask layer, and a hydrofluoric acid solution with a mass percentage of 3% by weight is sprayed to activate the surface of the glass substrate with the mask layer at a treatment temperature of 35° C. for 60 seconds.

[0191] In an exemplary embodiment, a solution containing 5% by weight of sodium hydroxide is used to remove the photoresist, and the treatment time is 1 minute.

[0192] In an exemplary embodiment, the glass substrate on the side with the mask layer is chemically etched with a fluorine-containing acidic etching solution, and the glass substrate is cleaned after the etching is completed.

[0193] In an exemplary embodiment, the etching solution includes, by weight, 14 parts of ammonium bifluoride, 4 parts of potassium bifluoride, 33 parts of glycerol, and 33 parts of deionized water. The etching time is 6.5 minutes, and the etching solution temperature is 22°C.

[0194] In an exemplary embodiment, after chemical etching, the depth of the particles on the glass substrate is 5.9-8.2 μm.

[0195] In an exemplary embodiment, the maximum particle depth is 8.2 μm, and the maximum difference in depth size between particles is 2.3 μm.

[0196] In an exemplary embodiment, a chromium etching solution is used to remove the metal chromium layer, and the processing time is 5 minutes.

[0197] In an exemplary embodiment, the glass substrate from which the mask layer is removed is chemically polished using an alkaline polishing solution, and the polishing is stopped when the transmission haze reaches 22.5%.

[0198] In an exemplary embodiment, the polishing liquid includes, by weight, 10 parts of hydrofluoric acid, 8 parts of sulfuric acid, and 73 parts of deionized water. The temperature of the polishing liquid is 33° C., and the polishing time is 21 minutes.

[0199] In an exemplary embodiment, the particle depth is 1.9-3.8 μm, and the maximum difference in depth between particles is 1.9 μm; the particle diameter is 20.1-29.5 μm, and the maximum difference in particle diameter is 9.4 μm.

[0200] In an exemplary embodiment, the anti-glare glass of the embodiment of the present application has a 60-degree mirror glossiness of 26.5 GU, distinctness of image of 0.6%, haze of 22.5%, roughness of 0.259 μm, flash point of none, and moiré of none.

[0201] Example 6 In an exemplary embodiment, first, a 200 nm thick chromium metal film is deposited on one side of a clean glass by vacuum evaporation, and then a 2 μm thick photoresist is coated on the surface of the chromium film by roller coating.

[0202] In an exemplary embodiment, the chromium metal film layer is deposited using a flat continuous vacuum evaporation machine with a power of 5 kW and a line speed of 7 mm / s.

[0203] In an exemplary embodiment, a pattern is preset on the surface of the photoresist by exposure and development, and the pattern distribution rule is as follows: a through-hole array consisting of multiple columns of through-holes arranged in parallel.

[0204] In an exemplary embodiment, the diameter of the through hole is 5-7 μm, that is, the difference between the maximum diameter and the minimum diameter of the through hole is 2 μm, and the number of through holes is evenly distributed among 5 μm, 5.5 μm, 6 μm, 6.5 μm and 7 μm, that is, the number of through holes is the same when the diameter is 5 μm, 5.5 μm, 6 μm, 6.5 μm and 7 μm.

[0205] In an exemplary embodiment, the center distance between adjacent through-holes in each column of the through-hole array consisting of multiple columns of through-holes is 20 μm.

[0206] In an exemplary embodiment, the vertical distance between adjacent columns on the through-hole array is 20 times cos30°, or 17.32 μm.

[0207] In an exemplary embodiment, a chromium etching solution is used to transfer the surface pattern of the photoresist to the surface of the chromium film layer, exposing the glass substrate at the position corresponding to the pattern.

[0208] In an exemplary embodiment, the chromium etching solution is composed of ammonium cerium nitrate, glacial acetic acid, and deionized water, wherein the mass fraction of ammonium cerium nitrate is 16%wt, the mass fraction of glacial acetic acid is 3%wt, and the mass fraction of deionized water is 81%wt, and the etching time is 3 minutes.

[0209] In an exemplary embodiment, an acid-resistant PET protective film is attached to the side of the glass substrate without the mask layer, and a hydrofluoric acid solution with a mass percentage of 3% by weight is sprayed to activate the surface of the glass substrate with the mask layer at a treatment temperature of 35° C. for 60 seconds.

[0210] In an exemplary embodiment, a solution with a sodium hydroxide mass fraction of 5%wt is used to remove the photoresist, and the treatment time is 1 min.

[0211] In an exemplary embodiment, a fluorine-containing acidic etching solution is used to chemically etch the glass substrate on the side with the mask layer, and the glass substrate is cleaned after etching is completed.

[0212] In an exemplary embodiment, the etching solution includes, by mass parts: 15 parts of ammonium bifluoride, 5 parts of potassium bifluoride, 30 parts of glycerol, and 30 parts of deionized water. The etching time is 5 min, and the temperature of the etching solution is 21 °C.

[0213] In an exemplary embodiment, after chemical etching, the particle depth on the glass substrate is 6.1 - 8.5 μm.

[0214] In an exemplary embodiment, the maximum particle depth is 8.5 μm, and the maximum difference in depth dimensions between particles is 2.4 μm.

[0215] In an exemplary embodiment, a chromium etching solution is used to remove the metal chromium layer, and the treatment time is 5 min.

[0216] In an exemplary embodiment, an alkaline polishing solution is used to chemically polish the glass substrate on the side where the mask layer is removed, and the polishing is stopped when the transmission haze reaches 41.2%.

[0217] In an exemplary embodiment, the polishing solution includes, by mass parts: 8 parts of hydrofluoric acid, 8 parts of sulfuric acid, and 80 parts of deionized water. The temperature of the polishing solution is 30 °C, and the polishing time is 12 min.

[0218] In an exemplary embodiment, the particle depth is 2.6 - 4.9 μm, and the maximum difference in depth dimensions between particles is 2.3 μm; the particle diameter is 20 - 23 μm, and the maximum difference in diameter dimensions between particles is 3 μm.

[0219] In an exemplary embodiment, for the anti-glare glass of the embodiment of the present application, the specular gloss at a 60-degree angle: 18.1 GU; DOI: 0.3%; haze: 41.2%; surface roughness: 0.362 μm; flash point: none; moiré: none.

[0220] Example 7 In an exemplary embodiment, first, a chromium metal film layer with a thickness of 200 nm is deposited on one side of a clean glass by vacuum evaporation, and then a photoresist layer with a thickness of 2 μm is coated on the surface of the chromium film layer by roll coating.

[0221] In an exemplary embodiment, the chromium metal film layer is deposited by a planar continuous vacuum evaporation machine with a power of 5 Kw and a linear speed of 7 mm / s.

[0222] In an exemplary embodiment, a pattern is preset on the surface of the photoresist by exposure and development, and the pattern distribution rule is as follows: a via array composed of multiple columns of vias arranged in parallel.

[0223] In an exemplary embodiment, the diameter of the via is 5 - 7 μm, that is, the difference between the maximum diameter and the minimum diameter of the via is 2 μm, and the number of vias is evenly distributed among 5 μm, 5.5 μm, 6 μm, 6.5 μm, and 7 μm, that is, the number of vias is the same when the diameter is 5 μm, 5.5 μm, 6 μm, 6.5 μm, and 7 μm.

[0224] In an exemplary embodiment, the center distance between adjacent vias in each column of the via array composed of multiple columns of vias is 20 μm.

[0225] In an exemplary embodiment, the vertical distance between adjacent columns in the via array is 20 times cos30°, that is, 17.32 μm.

[0226] In an exemplary embodiment, a chromium etching solution is used to transfer the pattern on the surface of the photoresist to the surface of the chromium film layer, exposing the glass substrate at the corresponding pattern position.

[0227] In an exemplary embodiment, the chromium etching solution is composed of ammonium cerium nitrate, glacial acetic acid, and deionized water, where the mass fraction of ammonium cerium nitrate is 16%wt, the mass fraction of glacial acetic acid is 3%wt, the mass fraction of deionized water is 81%wt, and the etching time is 3 min.

[0228] In an exemplary embodiment, an acid-resistant PET protective film is attached to the side of the glass substrate without a mask layer, and a solution with a mass fraction of 3%wt of hydrofluoric acid is used to perform surface activation treatment on the side of the glass substrate with a mask layer by the spraying method, with a treatment temperature of 35°C and a treatment time of 60 s.

[0229] In an exemplary embodiment, a solution with a mass fraction of 5%wt of sodium hydroxide is used to remove the photoresist, with a treatment time of 1 min.

[0230] In an exemplary embodiment, a chemical etching is performed on the side of the glass substrate with a mask layer using an alkaline etching solution, and after the etching is completed, the glass substrate is cleaned.

[0231] In an exemplary embodiment, the etching solution includes, by mass parts: 45 parts of sodium hydroxide, 30 parts of glycerol, 55 parts of deionized water, an etching time of 10 min, and an etching temperature of 125°C.

[0232] In an exemplary embodiment, after the chemical etching, the particle depth on the glass substrate is 0.5 - 5 μm.

[0233] In an exemplary embodiment, the maximum particle depth is 5 μm, and the maximum difference in the depth dimension between particles is 4.5 μm.

[0234] In an exemplary embodiment, a chromium etching solution is used to remove the metal chromium layer, and the treatment time is 5 min.

[0235] In an exemplary embodiment, an alkaline polishing solution is used to chemically polish the glass substrate on the side where the mask layer has been removed, and the polishing is stopped when the transmission haze reaches 5.1%.

[0236] In an exemplary embodiment, the polishing solution includes, by mass: 45 parts of sodium hydroxide, 55 parts of deionized water, the temperature is 125 °C, and the polishing time is 36 min.

[0237] In an exemplary embodiment, the particle depth is 0.4 - 1.6 μm, and the maximum difference in the depth dimension between particles is 1.2 μm; the particle diameter is 20 - 34.5 μm, and the maximum difference in the particle diameter dimension is 14.5 μm.

[0238] In an exemplary embodiment, for the antiglare glass of the embodiment of the present application, the specular gloss at a 60-degree angle is 70.3 GU; the DOI is 1.5%; the haze is 5.1%; the surface roughness is 0.122 μm; there is no flash point; and there is no moiré pattern.

[0239] Example 8 In an exemplary embodiment, first, a chromium metal film layer with a thickness of 200 nm is deposited on one side of a clean glass by vacuum evaporation, and then a photoresist layer with a thickness of 2 μm is coated on the surface of the chromium film layer by roll coating.

[0240] In an exemplary embodiment, the chromium metal film layer is deposited by a planar continuous vacuum evaporation machine with a power of 5 Kw and a linear speed of 7 mm / s.

[0241] In an exemplary embodiment, then a preset pattern is formed on the surface of the photoresist by exposure and development, and the pattern distribution rule is as follows: a through-hole array composed of multiple parallel columns of through-holes.

[0242] In an exemplary embodiment, the diameter of the through-hole is 5 - 7 μm, that is, the difference between the maximum diameter and the minimum diameter of the through-hole is 2 μm, and the number of through-holes is evenly distributed among 5 μm, 5.5 μm, 6 μm, 6.5 μm, and 7 μm, that is, the number of through-holes is the same when the diameter is 5 μm, 5.5 μm, 6 μm, 6.5 μm, and 7 μm.

[0243] In an exemplary embodiment, the center distance between adjacent through-holes in each column of the through-hole array composed of multiple columns of through-holes is 20 μm.

[0244] In an exemplary embodiment, the vertical distance between adjacent columns in the via hole array is 20 times cos30°, that is, 17.32 μm.

[0245] In an exemplary embodiment, a photoresist surface pattern is transferred to the surface of the chromium film layer using a chromium etchant, exposing the glass substrate at the corresponding pattern positions.

[0246] In an exemplary embodiment, the chromium etchant is composed of ammonium cerium nitrate, glacial acetic acid, and deionized water, where the mass fraction of ammonium cerium nitrate is 16% wt, the mass fraction of glacial acetic acid is 3% wt, the mass fraction of deionized water is 81% wt, and the etching time is 3 min.

[0247] In an exemplary embodiment, an acid-resistant PET protective film is attached to the side of the glass substrate without the mask layer, and a 3% wt solution of hydrofluoric acid is used to perform surface activation treatment on the side of the glass substrate with the mask layer by the spraying method, with a treatment temperature of 35 °C and a treatment time of 60 s.

[0248] In an exemplary embodiment, a solution with a 5% wt proportion of sodium hydroxide is used to remove the photoresist, and the treatment time is 1 min.

[0249] In an exemplary embodiment, a chemical etching is performed on the side of the glass substrate with the mask layer using an alkaline etchant, and after the etching is completed, the glass substrate is cleaned.

[0250] In an exemplary embodiment, the etchant includes, by mass parts: 50 parts of sodium hydroxide, 25 parts of glycerol, 50 parts of deionized water, an etching time of 8.5 min, and an etching temperature of 120 °C.

[0251] In an exemplary embodiment, after the chemical etching, the particle depth on the glass substrate is 4.3 - 7.6 μm.

[0252] In an exemplary embodiment, after the chemical etching, the maximum particle depth on the glass substrate is 7.6 μm, and the maximum difference in depth dimensions between particles is 3.3 μm.

[0253] In an exemplary embodiment, a chromium etchant is used to remove the metal chromium layer, and the treatment time is 5 min.

[0254] In an exemplary embodiment, chemical polishing is performed on the side of the glass substrate from which the mask layer has been removed, and the polishing is stopped when the transmission haze reaches 10.4%.

[0255] In an exemplary embodiment, the polishing solution includes, by mass parts: 50 parts of sodium hydroxide, 50 parts of deionized water, a temperature of 120 °C, and a polishing time of 30 min.

[0256] In an exemplary embodiment, the surface particle depth of the anti-glare glass obtained after polishing is 1.2 - 2.7 μm, the maximum difference in the depth dimension between particles is 1.5 μm, the particle diameter is 20.3 - 32.3 μm, and the maximum difference in the diameter dimension between particles is 12 μm.

[0257] In an exemplary embodiment, for the anti-glare glass of the embodiment of the present application, the specular gloss at a 60-degree angle: 45.2 GU; DOI: 0.6%; haze: 10.4%; roughness: 0.207 μm; flash point: none; moiré: none.

[0258] Example 9 In an exemplary embodiment, first, a 200-nm-thick chromium metal film layer is deposited on one side of a clean glass by vacuum evaporation, and then a 2-μm-thick photoresist is coated on the surface of the chromium film layer by roll coating.

[0259] In an exemplary embodiment, the chromium metal film layer is deposited by a planar continuous vacuum evaporation machine with a power of 5 Kw and a linear speed of 7 mm / s.

[0260] In an exemplary embodiment, then a preset pattern is formed on the surface of the photoresist by exposure and development, and the pattern distribution rule is as follows: a through-hole array composed of multiple parallel columns of through-holes.

[0261] In an exemplary embodiment,

[0262] The diameter of the through-holes is 5 - 7 μm, that is, the difference between the maximum diameter and the minimum diameter of the through-holes is 2 μm, and the number of through-holes is evenly distributed among 5 μm, 5.5 μm, 6 μm, 6.5 μm, and 7 μm, that is, the number of through-holes is the same when the diameter is 5 μm, 5.5 μm, 6 μm, 6.5 μm, and 7 μm.

[0263] In an exemplary embodiment, the center distance between adjacent through-holes in each column of the through-hole array composed of multiple columns of through-holes is 20 μm.

[0264] In an exemplary embodiment, the vertical distance between adjacent columns in the through-hole array is 20 times cos30°, that is, 17.32 μm.

[0265] In an exemplary embodiment, a chromium etching solution is used to transfer the pattern on the surface of the photoresist to the surface of the chromium film layer, exposing the glass substrate at the corresponding pattern positions.

[0266] In an exemplary embodiment, the chromium etching solution is composed of ammonium cerium nitrate, glacial acetic acid, and deionized water, where the mass fraction of ammonium cerium nitrate is 16% wt, the mass fraction of glacial acetic acid is 3% wt, the mass fraction of deionized water is 81% wt, and the etching time is 3 min.

[0267] In an exemplary embodiment, an acid-resistant PET protective film is attached to the side of the glass substrate without the mask layer, and a solution with a mass ratio of hydrofluoric acid of 3%wt is used to perform surface activation treatment on the side of the glass substrate with the mask layer by the spraying method. The treatment temperature is 35°C and the treatment time is 60s.

[0268] In an exemplary embodiment, a solution with a mass ratio of sodium hydroxide of 5%wt is used to remove the photoresist, and the treatment time is 1min.

[0269] In an exemplary embodiment, a basic etching solution is used to chemically etch the side of the glass substrate with the mask layer, and after the etching is completed, the glass substrate is cleaned.

[0270] In an exemplary embodiment, the etching solution includes, by mass parts: 55 parts of sodium hydroxide, 20 parts of glycerol, 45 parts of deionized water, the etching time is 8min, and the etching temperature is 118°C.

[0271] In an exemplary embodiment, after chemical etching, the particle depth on the glass substrate is 5.4 - 8.3μm.

[0272] In an exemplary embodiment, the maximum particle depth is 8.3μm, and the maximum difference in the depth dimension between particles is 2.9μm.

[0273] In an exemplary embodiment, a chromium etching solution is used to remove the metal chromium layer, and the treatment time is 5min.

[0274] In an exemplary embodiment, a basic polishing solution is used to chemically polish the side of the glass substrate from which the mask layer has been removed, and the polishing is stopped when the transmission haze reaches 22.4%.

[0275] In an exemplary embodiment, the polishing solution includes, by mass parts: a mixed solution of 55 parts of sodium hydroxide and 45 parts of deionized water, the temperature is 118°C, and the polishing time is 22min.

[0276] In an exemplary embodiment, the particle depth is 1.6 - 3.7μm, and the maximum difference in the depth dimension between particles is 2.1μm; the particle diameter is 20.2 - 29.7μm, and the maximum difference in the particle diameter dimension is 9.5μm.

[0277] In an exemplary embodiment, for the anti-glare glass of the embodiment of the present application, the specular gloss at a 60-degree angle: 26.2GU; DOI: 0.7%; haze: 22.4%; roughness: 0.261μm; flash point: none; moiré pattern: none.

[0278] Example 10 In an exemplary embodiment, first, a chromium metal film layer with a thickness of 200 nm is deposited on one side of a clean glass by vacuum evaporation, and then a photoresist layer with a thickness of 2 μm is coated on the surface of the chromium film layer by roll coating.

[0279] In an exemplary embodiment, the chromium metal film layer is deposited by a planar continuous vacuum evaporation machine with a power of 5 KW and a linear velocity of 7 mm / s.

[0280] In an exemplary embodiment, then a preset pattern is formed on the surface of the photoresist by exposure and development, and the pattern distribution rule is as follows: a through-hole array composed of multiple parallel columns of through-holes.

[0281] In an exemplary embodiment, the diameter of the through-holes is 5 - 7 μm, and the diameter value gradient of the through-holes is 0.5 μm, that is, the diameter values of the through-holes are 5 μm, 5.5 μm, 6 μm, 6.5 μm, and 7 μm. The diameter of the through-holes is normally distributed or approximately normally distributed with a central value of 6 μm. Among them, the proportion of the 6-μm aperture is about 50%, the proportion of the 5-μm aperture is about 10%, the proportion of the 5.5-μm aperture is about 15%, the proportion of the 6.5-μm aperture is about 15%, and the proportion of the 7-μm aperture is about 10%.

[0282] In an exemplary embodiment, the center distance between adjacent holes in each column of the through-hole array composed of multiple columns of through-holes is 20 μm.

[0283] In an exemplary embodiment, the vertical distance between adjacent columns in the through-hole array is 20 times cos30°, that is, 17.32 μm.

[0284] In an exemplary embodiment, a chromium etchant is used to transfer the pattern on the surface of the photoresist to the metal chromium layer, and the corresponding hole pattern array is exposed on the metal chromium layer until the corresponding hole pattern array is exposed on the glass substrate.

[0285] In an exemplary embodiment, the chromium etchant is composed of ammonium cerium nitrate, glacial acetic acid, and deionized water, where the mass fraction of ammonium cerium nitrate is 16%wt, the mass fraction of glacial acetic acid is 3%wt, the mass fraction of deionized water is 81%wt, and the etching time is 3 min.

[0286] In an exemplary embodiment, an acid-resistant PET protective film is attached to the side of the glass substrate without a mask layer, and a solution with a mass fraction of 3%wt of hydrofluoric acid is used to perform surface activation treatment on the side of the glass substrate with a mask layer by the spray method. The treatment temperature is 35 °C, and the treatment time is 60 s.

[0287] In an exemplary embodiment, a solution with a mass fraction of 5%wt of sodium hydroxide is used to remove the photoresist, and the treatment time is 1 min.

[0288] In an exemplary embodiment, the glass substrate with the mask layer on one side is chemically etched using an alkaline etching solution, and after the etching is completed, the glass substrate is cleaned.

[0289] In an exemplary embodiment, the etching solution includes, by mass parts: 55 parts of sodium hydroxide, 20 parts of glycerol, 45 parts of deionized water, an etching time of 9 min, and an etching solution temperature of 118 °C.

[0290] In an exemplary embodiment, after chemical etching, the particle depth on the glass substrate is 5.6 - 8.3 μm.

[0291] In an exemplary embodiment, after chemical etching, the maximum particle depth on the glass substrate is 8.3 μm, and the maximum difference in depth dimensions between particles is 2.7 μm.

[0292] In an exemplary embodiment, a solution with a 5%wt sodium hydroxide mass ratio is used to remove the photoresist, and the treatment time is 1 min.

[0293] In an exemplary embodiment, a chromium etching solution is used to remove the metal chromium layer, and the treatment time is 5 min.

[0294] In an exemplary embodiment, the glass substrate with the mask layer removed is chemically polished, and the polishing is stopped when the transmittance haze reaches 22.3%.

[0295] In an exemplary embodiment, the polishing solution includes, by mass parts: 55 parts of sodium hydroxide, 45 parts of deionized water, the temperature of the polishing solution is 118 °C, and the polishing time is 22 min.

[0296] In an exemplary embodiment, the surface particle depth of the anti-glare glass obtained after polishing is 1.8 - 3.9 μm, the maximum difference in depth dimensions between particles is 2.1 μm, the particle diameter is 20.1 - 29.4 μm, and the maximum difference in diameter dimensions between particles is 9.3 μm.

[0297] In an exemplary embodiment, for the anti-glare glass of the embodiment of the present application, the specular gloss at a 60-degree angle: 26.5 GU; DOI: 0.7%; haze: 22.3%; roughness: 0.267 μm; flash point: none; moiré: none.

[0298] Example 11 In an exemplary embodiment, first, a 200-nm-thick chromium metal film layer is deposited on one side of a clean glass by vacuum evaporation, and then a 2-μm-thick photoresist is coated on the surface of the chromium film by roll coating.

[0299] In an exemplary embodiment, the chromium metal film layer is deposited using a flat continuous vacuum evaporation machine with a power of 5 kW and a line speed of 7 mm / s.

[0300] In an exemplary embodiment, a pattern is preset on the surface of the photoresist by exposure and development, and the pattern distribution rule is as follows: a through-hole array consisting of multiple columns of through-holes arranged in parallel.

[0301] In an exemplary embodiment, the diameter of the through hole is 5-7 μm, that is, the difference between the maximum diameter and the minimum diameter of the through hole is 2 μm, and the number of through holes is evenly distributed among 5 μm, 5.5 μm, 6 μm, 6.5 μm and 7 μm, that is, the number of through holes is the same when the diameter is 5 μm, 5.5 μm, 6 μm, 6.5 μm and 7 μm.

[0302] In an exemplary embodiment, the center distance between adjacent through-holes in each column of the through-hole array consisting of multiple columns of through-holes is 20 μm.

[0303] In an exemplary embodiment, the vertical distance between adjacent columns on the through-hole array is 20 times cos30°, or 17.32 μm.

[0304] In an exemplary embodiment, a chromium etching solution is used to transfer the surface pattern of the photoresist to the metal chromium layer, and a corresponding hole array pattern is exposed on the metal chromium layer until the glass substrate exposes the corresponding hole array pattern.

[0305] In an exemplary embodiment, the chromium etching solution is composed of ammonium cerium nitrate, glacial acetic acid, and deionized water, wherein the mass fraction of ammonium cerium nitrate is 16%wt, the mass fraction of glacial acetic acid is 3%wt, and the mass fraction of deionized water is 81%wt, and the etching time is 3 minutes.

[0306] In an exemplary embodiment, an acid-resistant PET protective film is attached to the side of the glass substrate without the mask layer, and a hydrofluoric acid solution with a mass percentage of 3% by weight is sprayed to activate the surface of the glass substrate with the mask layer at a treatment temperature of 35° C. for 60 seconds.

[0307] In an exemplary embodiment, an alkaline etching solution is used to chemically etch the glass substrate on the side with the mask layer, and the glass substrate is cleaned after the etching is completed.

[0308] In an exemplary embodiment, the etching solution includes, by weight, 60 parts of sodium hydroxide, 20 parts of glycerol, and 40 parts of deionized water. The etching time is 9 minutes, and the etching solution temperature is 115°C.

[0309] In an exemplary embodiment, after chemical etching, the depth of the particles on the glass substrate is 6-8.5 μm.

[0310] In an exemplary embodiment, after chemical etching, the maximum particle depth on the glass substrate is 8.5 μm, and the maximum difference in depth dimensions between particles is 2.5 μm.

[0311] In an exemplary embodiment, a solution with a 5%wt sodium hydroxide mass ratio is used to remove the photoresist, and the treatment time is 1 min.

[0312] In an exemplary embodiment, a chromium etchant is used to remove the metal chromium layer, and the treatment time is 5 min.

[0313] In an exemplary embodiment, the glass substrate on the side where the mask layer is removed is chemically polished and stopped when the transmission haze reaches 40.9%.

[0314] In an exemplary embodiment, the polishing liquid includes, by mass parts: 60 parts of sodium hydroxide and 40 parts of deionized water. The temperature of the polishing liquid is 115°C, and the polishing time is 13 min.

[0315] In an exemplary embodiment, the surface particle depth of the anti-glare glass obtained after polishing is 2.4 - 5.1 μm, the maximum difference in depth dimensions between particles is 2.7 μm, the particle diameter is 20 - 23.3 μm, and the maximum difference in diameter dimensions between particles is 3.3 μm.

[0316] In an exemplary embodiment, for the anti-glare glass of the embodiment of the present application, the specular gloss at a 60-degree angle: 18.3 GU; DOI: 0.5%; haze: 40.9%; roughness: 0.373 μm; flash point: none; moiré pattern: none.

[0317] Example 12 In an exemplary embodiment, first, a 200-nm-thick chromium metal film layer is deposited on one side of a clean glass by vacuum evaporation, and then a 2-μm-thick photoresist is coated on the surface of the chromium film layer by roll coating.

[0318] In an exemplary embodiment, the chromium metal film layer is deposited by a planar continuous vacuum evaporation machine with a power of 5 KW and a linear speed of 7 mm / s.

[0319] In an exemplary embodiment, then a pattern is preset on the surface of the photoresist by exposure and development. The pattern distribution rule is as follows: a through-hole array composed of multiple columns of through-holes arranged in parallel.

[0320] In an exemplary embodiment, the diameter of the through holes is 7 - 13 μm, that is, the difference between the maximum diameter and the minimum diameter of the through holes is 6 μm. The number of through holes is evenly distributed among 7 μm, 8 μm, 9 μm, 10 μm, 11 μm, 12 μm, and 13 μm, that is, the number of through holes is the same when the diameter is 7 μm, 8 μm, 9 μm, 10 μm, 11 μm, 12 μm, and 13 μm.

[0321] In an exemplary embodiment, the center distance between adjacent through holes on each column of the through hole array composed of multiple columns of through holes is 40 μm.

[0322] In an exemplary embodiment, the vertical distance between adjacent columns on the through hole array is 40 times cos30°, that is, 34.64 μm.

[0323] In an exemplary embodiment, a chromium etchant is used to transfer the photoresist surface pattern onto the metal chromium layer, and the corresponding hole pattern array is exposed on the metal chromium layer until the corresponding hole pattern array of the glass substrate is exposed.

[0324] In an exemplary embodiment, the chromium etchant is composed of ammonium cerium nitrate, glacial acetic acid, and deionized water, wherein the mass fraction of ammonium cerium nitrate is 16% wt, the mass fraction of glacial acetic acid is 3% wt, the mass fraction of deionized water is 81% wt, and the etching time is 3 min.

[0325] In an exemplary embodiment, an acid-resistant PET protective film is attached to the side of the glass substrate without the mask layer, and a solution with a mass fraction of 3% wt of hydrofluoric acid is used to perform surface activation treatment on the side of the glass substrate with the mask layer by the spraying method. The treatment temperature is 35 °C and the treatment time is 60 s. In an exemplary embodiment, a fluorine-containing acidic etchant is used to chemically etch the side of the glass substrate with the mask layer, and the glass substrate is cleaned after etching.

[0326] In an exemplary embodiment, the etchant includes, by mass parts: 15 parts of ammonium bifluoride, 3 parts of potassium bifluoride, 30 parts of glycerol, and 35 parts of deionized water. The etching time is 11 min and the temperature of the etchant is 22 °C.

[0327] In an exemplary embodiment, after chemical etching, the particle depth on the glass substrate is 9.1 - 12.8 μm.

[0328] In an exemplary embodiment, after chemical etching, the maximum particle depth on the glass substrate is 12.8 μm, and the maximum difference in depth dimensions between particles is 3.7 μm.

[0329] In an exemplary embodiment, a solution with a mass fraction of 5% wt of sodium hydroxide is used to remove the photoresist, and the treatment time is 1 min.

[0330] In an exemplary embodiment, a chromium etchant is used to remove the metal chromium layer, and the processing time is 5 minutes.

[0331] In an exemplary embodiment, the glass substrate on the side where the mask layer is removed is chemically polished until the transmission haze reaches 22.1% and then stopped.

[0332] In an exemplary embodiment, the polishing liquid includes, by mass parts: 10 parts of hydrofluoric acid, 10 parts of sulfuric acid, and 68 parts of deionized water. The temperature of the polishing liquid is 30 °C, and the polishing time is 52 minutes.

[0333] In an exemplary embodiment, the surface particle depth of the anti-glare glass obtained after polishing is 1.0 - 4.3 μm, the maximum difference in depth dimensions between particles is 3.3 μm, the particle diameter is 32.9 - 72.2 μm, and the maximum difference in diameter dimensions between particles is 39.3 μm.

[0334] In an exemplary embodiment, for the anti-glare glass of the embodiment of the present application, the specular gloss at a 60-degree angle is 27.7 GU; the DOI is 0.3%; the haze is 22.1%; the surface roughness is 0.681 μm; there is no flash point; and there is no moiré pattern.

[0335] Example 13 In an exemplary embodiment, first, a chromium metal film layer with a thickness of 200 nm is deposited on one side of a clean glass by vacuum evaporation, and then a layer of photoresist with a thickness of 2 μm is coated on the surface of the chromium film layer by roll coating.

[0336] In an exemplary embodiment, the chromium metal film layer is deposited by a planar continuous vacuum evaporation machine with a power of 5 KW and a linear speed of 7 mm / s.

[0337] In an exemplary embodiment, then a preset pattern is formed on the surface of the photoresist by exposure and development. The pattern distribution rules are as follows: a through-hole array composed of multiple parallel columns of through-holes.

[0338] In an exemplary embodiment, the diameter of the through-hole is 7 - 13 μm, that is, the difference between the maximum diameter and the minimum diameter of the through-hole is 6 μm. The number of through-holes is evenly distributed among 7 μm, 8 μm, 9 μm, 10 μm, 11 μm, 12 μm, and 13 μm, that is, the number of through-holes with diameters of 7 μm, 8 μm, 9 μm, 10 μm, 11 μm, 12 μm, and 13 μm is the same.

[0339] In an exemplary embodiment, the center distance between adjacent through-holes in each column of the through-hole array composed of multiple columns of through-holes is 40 μm.

[0340] In an exemplary embodiment, the vertical distance between adjacent columns on the through-hole array is 40 times cos30°, or 34.64 μm.

[0341] In an exemplary embodiment, a chromium etching solution is used to transfer the surface pattern of the photoresist to the metal chromium layer, and a corresponding hole array pattern is exposed on the metal chromium layer until the glass substrate exposes the corresponding hole array pattern.

[0342] In an exemplary embodiment, the chromium etching solution is composed of ammonium cerium nitrate, glacial acetic acid, and deionized water, wherein the mass fraction of ammonium cerium nitrate is 16%wt, the mass fraction of glacial acetic acid is 3%wt, and the mass fraction of deionized water is 81%wt, and the etching time is 3 minutes.

[0343] In an exemplary embodiment, an acid-resistant PET protective film is attached to the side of the glass substrate without the mask layer, and a hydrofluoric acid solution with a mass percentage of 3% by weight is sprayed to activate the surface of the glass substrate with the mask layer at a treatment temperature of 35° C. for 60 seconds.

[0344] In an exemplary embodiment, a fluorine-containing acidic etching solution is used to chemically etch the glass substrate on the side with the mask layer, and the glass substrate is cleaned after the etching is completed.

[0345] In an exemplary embodiment, the etching solution includes, by weight, 55 parts of sodium hydroxide, 20 parts of glycerol, and 45 parts of deionized water. The etching time is 16 minutes, and the etching solution temperature is 120°C.

[0346] In an exemplary embodiment, after chemical etching, the depth of the particles on the glass substrate is 10.3-14.5 μm.

[0347] In an exemplary embodiment, after chemical etching, the maximum depth of particles on the glass substrate is 14.5 μm, and the maximum difference in depth between particles is 4.2 μm.

[0348] In an exemplary embodiment, a solution containing 5% by weight of sodium hydroxide is used to remove the photoresist, and the treatment time is 1 minute.

[0349] In an exemplary embodiment, a chromium etching solution is used to remove the metal chromium layer, and the processing time is 5 minutes.

[0350] In an exemplary embodiment, the glass substrate on the side where the mask layer is removed is chemically polished, and the polishing is stopped when the transmission haze reaches 53.1%.

[0351] In an exemplary embodiment, the polishing liquid includes, by weight, 55 parts of sodium hydroxide and 45 parts of deionized water. The temperature of the polishing liquid is 120° C., and the polishing time is 22 minutes.

[0352] In an exemplary embodiment, the surface particle depth of the anti-glare glass obtained after polishing is 2.8 - 6.7 μm, the maximum difference in depth dimensions between particles is 3.9 μm, the particle diameter is 37.4 - 55.8 μm, and the maximum difference in diameter dimensions between particles is 18.4 μm.

[0353] In an exemplary embodiment, for the anti-glare glass of the embodiment of the present application, the specular gloss at a 60-degree angle: 15.1 GU; DOI: 0.4%; haze: 53.1%; surface roughness: 0.865 μm; flash point: none; moiré: none.

[0354] Example 14 In an exemplary embodiment, first, a chromium metal film layer with a thickness of 200 nm is deposited on one side of the clean glass by vacuum evaporation, and then a photoresist layer with a thickness of 2 μm is coated on the surface of the chromium film layer by roll coating.

[0355] In an exemplary embodiment, the chromium metal film layer is deposited by a planar continuous vacuum evaporation machine with a power of 5 KW and a linear speed of 7 mm / s.

[0356] In an exemplary embodiment, then a preset pattern is formed on the surface of the photoresist by exposure and development, and the pattern distribution rules are as follows: a through-hole array composed of multiple parallel columns of through-holes.

[0357] In an exemplary embodiment, the diameter of the through-holes is 7 - 13 μm, the diameter value gradient of the through-holes is 1 μm, that is, the diameter values of the through-holes are 7 μm, 8 μm, 9 μm, 10 μm, 11 μm, 12 μm, and 13 μm. The through-hole diameters are normally distributed or approximately normally distributed with 10 μm as the central value. Among them, the aperture ratio of 9 - 11 μm accounts for about 50%, the aperture ratio of 7 - 8 μm accounts for about 25%, and the aperture ratio of 12 - 13 μm accounts for about 25%.

[0358] In an exemplary embodiment, the center distance between adjacent holes in each column of the through-hole array composed of multiple columns of through-holes is 40 μm.

[0359] In an exemplary embodiment, the vertical distance between adjacent columns in the through-hole array is 40 times cos30°, that is, 34.64 μm.

[0360] In an exemplary embodiment, a chromium etchant is used to transfer the pattern on the surface of the photoresist to the metal chromium layer, and the corresponding hole pattern array is exposed on the metal chromium layer until the corresponding hole pattern array of the glass substrate is exposed.

[0361] In an exemplary embodiment, the chromium etching solution is composed of ammonium cerium nitrate, glacial acetic acid, and deionized water, wherein the mass fraction of ammonium cerium nitrate is 16%wt, the mass fraction of glacial acetic acid is 3%wt, and the mass fraction of deionized water is 81%wt, and the etching time is 3 minutes.

[0362] In an exemplary embodiment, an acid-resistant PET protective film is attached to the side of the glass substrate without the mask layer, and a hydrofluoric acid solution with a mass percentage of 3% by weight is sprayed to activate the surface of the glass substrate with the mask layer at a treatment temperature of 35° C. for 60 seconds.

[0363] In an exemplary embodiment, a fluorine-containing acidic etching solution is used to chemically etch the glass substrate on the side with the mask layer, and the glass substrate is cleaned after the etching is completed.

[0364] In an exemplary embodiment, the etching solution includes, by weight, 15 parts of ammonium bifluoride, 5 parts of potassium bifluoride, 30 parts of glycerol, and 32 parts of deionized water. The etching time is 14 minutes, and the etching solution temperature is 20°C.

[0365] In an exemplary embodiment, after chemical etching, the depth of the particles on the glass substrate is 9.8-13.2 μm.

[0366] In an exemplary embodiment, after chemical etching, the maximum depth of particles on the glass substrate is 13.2 μm, and the maximum difference in depth between particles is 3.4 μm.

[0367] In an exemplary embodiment, a solution containing 5% by weight of sodium hydroxide is used to remove the photoresist, and the treatment time is 1 minute.

[0368] In an exemplary embodiment, a chromium etching solution is used to remove the metal chromium layer, and the processing time is 5 minutes.

[0369] In an exemplary embodiment, the glass substrate on the side where the mask layer is removed is chemically polished, and the polishing is stopped when the transmission haze reaches 85%.

[0370] In an exemplary embodiment, the polishing liquid includes, by weight, 10 parts of hydrofluoric acid, 10 parts of sulfuric acid, and 68 parts of deionized water. The temperature of the polishing liquid is 30° C., and the polishing time is 8 minutes.

[0371] In an exemplary embodiment, the surface particle depth of the anti-glare glass obtained after polishing is 4.6-7.5 μm, the maximum difference in depth between particles is 2.9 μm, the particle diameter is 39.1-46.3 μm, and the maximum difference in diameter between particles is 7.2 μm.

[0372] In an exemplary embodiment, for the anti-glare glass of the embodiments of the present application, the specular gloss at a 60-degree angle is 14.2 GU; the DOI is 0.2%; the haze is 85%; the surface roughness is 1.109 μm; the flash point is none; and moiré is none.

[0373] Example 15 In an exemplary embodiment, first, a chromium metal film layer with a thickness of 200 nm is deposited on one side of a clean glass by vacuum evaporation, and then a layer of photoresist with a thickness of 2 μm is coated on the surface of the chromium film by roll coating.

[0374] In an exemplary embodiment, the chromium metal film layer is deposited by a planar continuous vacuum evaporation machine with a power of 5 KW and a linear speed of 7 mm / s.

[0375] In an exemplary embodiment, then a preset pattern is formed on the surface of the photoresist by exposure and development, and the pattern distribution rules are as follows: a via array composed of multiple parallel columns of vias.

[0376] In an exemplary embodiment, the diameter of the vias is 7 - 13 μm, and the diameter value gradient of the vias is 1 μm, that is, the diameter values of the vias are 7 μm, 8 μm, 9 μm, 10 μm, 11 μm, 12 μm, and 13 μm. The via diameters are normally distributed or approximately normally distributed with a central value of 10 μm. Among them, the aperture ratio of 9 - 11 μm accounts for about 50%, the aperture ratio of 7 - 8 μm accounts for about 25%, and the aperture ratio of 12 - 13 μm accounts for about 25%.

[0377] In an exemplary embodiment, the center distance between adjacent holes in each column of the via array composed of multiple columns of vias is 40 μm.

[0378] In an exemplary embodiment, the vertical distance between adjacent columns in the via array is 40 times cos30°, that is, 34.64.

[0379] In an exemplary embodiment, a chromium etchant is used to transfer the pattern on the surface of the photoresist to the metal chromium layer, and the corresponding hole pattern array is exposed on the metal chromium layer until the corresponding hole pattern array is exposed on the glass substrate.

[0380] In an exemplary embodiment, the chromium etchant is composed of ammonium cerium nitrate, glacial acetic acid, and deionized water, where the mass fraction of ammonium cerium nitrate is 16% wt, the mass fraction of glacial acetic acid is 3% wt, and the mass fraction of deionized water is 81% wt, and the etching time is 3 min.

[0381] In an exemplary embodiment, an acid-resistant PET protective film is attached to the side of the glass substrate without the mask layer, and a solution with a mass fraction of 3%wt of hydrofluoric acid is used to perform surface activation treatment on the side of the glass substrate with the mask layer by the spraying method. The treatment temperature is 35°C, and the treatment time is 60s.

[0382] In an exemplary embodiment, a fluorine-containing acidic etching solution is used to chemically etch the side of the glass substrate with the mask layer, and after the etching is completed, the glass substrate is cleaned.

[0383] In an exemplary embodiment, the etching solution includes, by mass parts: 15 parts of ammonium bifluoride, 5 parts of potassium bifluoride, 30 parts of glycerol, and 32 parts of deionized water. The etching time is 14min, and the temperature of the etching solution is 20°C.

[0384] In an exemplary embodiment, after chemical etching, the particle depth on the glass substrate is 9.6 - 13.3μm.

[0385] In an exemplary embodiment, after chemical etching, the maximum particle depth on the glass substrate is 13.3μm, and the maximum difference in depth size between particles is 3.7μm.

[0386] In an exemplary embodiment, a solution with a mass fraction of 5%wt of sodium hydroxide is used to remove the photoresist, and the treatment time is 1min.

[0387] In an exemplary embodiment, a chromium etching solution is used to remove the metal chromium layer, and the treatment time is 5min.

[0388] In an exemplary embodiment, the side of the glass substrate from which the mask layer has been removed is chemically polished, and the polishing is stopped when the transmission haze reaches 45.3%.

[0389] In an exemplary embodiment, the polishing solution includes, by mass parts: 55 parts of hydrofluoric acid sodium hydroxide, 45 parts of deionized water. The temperature of the polishing solution is 120°C, and the polishing time is 43min.

[0390] In an exemplary embodiment, the surface particle depth of the anti-glare glass obtained after polishing is 2.2 - 6.2μm, the maximum difference in depth size between particles is 4μm, the particle diameter is 35.6 - 62.7μm, and the maximum difference in diameter size between particles is 27.1μm.

[0391] In an exemplary embodiment, for the anti-glare glass of the embodiment of the present application, the specular gloss at a 60-degree angle: 17.9GU; DOI: 0.7%; haze: 45.3%; roughness: 0.813μm; flash point: none; moiré: none.

[0392] Example 16 In an exemplary embodiment, first, a chromium metal film layer with a thickness of 200 nm is deposited on one side of a clean glass by vacuum evaporation, and then a photoresist layer with a thickness of 2 μm is coated on the surface of the chromium film layer by roll coating.

[0393] In an exemplary embodiment, the chromium metal film layer is deposited by a planar continuous vacuum evaporation machine with a power of 5 KW and a linear speed of 7 mm / s.

[0394] In an exemplary embodiment, then a preset pattern is formed on the surface of the photoresist by exposure and development, and the pattern distribution rule is as follows: a via array composed of multiple parallel columns of vias.

[0395] In an exemplary embodiment, the diameter of the vias is 7 - 13 μm, that is, the difference between the maximum diameter and the minimum diameter of the vias is 6 μm, and the number of vias is evenly distributed among 7 μm, 8 μm, 9 μm, 10 μm, 11 μm, 12 μm, and 13 μm, that is, the number of vias is the same when the diameter is 7 μm, 8 μm, 9 μm, 10 μm, 11 μm, 12 μm, and 13 μm.

[0396] In an exemplary embodiment, the center distance between adjacent vias in each column of the via array composed of multiple columns of vias is 50 μm.

[0397] In an exemplary embodiment, the vertical distance between adjacent columns in the via array is 50 times cos30°, that is, 43.30 μm.

[0398] In an exemplary embodiment, a chromium etchant is used to transfer the pattern on the surface of the photoresist to the metal chromium layer, and the corresponding hole pattern array is exposed on the metal chromium layer until the corresponding hole pattern array of the glass substrate is exposed.

[0399] In an exemplary embodiment, the chromium etchant is composed of ammonium cerium nitrate, glacial acetic acid, and deionized water, where the mass fraction of ammonium cerium nitrate is 16% wt, the mass fraction of glacial acetic acid is 3% wt, the mass fraction of deionized water is 81% wt, and the etching time is 3 min.

[0400] In an exemplary embodiment, a acid-resistant PET protective film is attached to the side of the glass substrate without the mask layer, and a solution with a mass fraction of 3% wt of hydrofluoric acid is used to perform surface activation treatment on the side of the glass substrate with the mask layer by spraying method, with a treatment temperature of 35 °C and a treatment time of 60 s.

[0401] In an exemplary embodiment, a fluorine-containing acidic etchant is used to chemically etch the side of the glass substrate with the mask layer, and after etching, the glass substrate is cleaned.

[0402] In an exemplary embodiment, the etching solution comprises, by mass parts: 15 parts of ammonium bifluoride, 4 parts of potassium bifluoride, 30 parts of glycerol, 40 parts of deionized water, the etching time is 13.5 min, and the temperature of the etching solution is 20 °C.

[0403] In an exemplary embodiment, after chemical etching, the particle depth on the glass substrate is 9.3 - 12.7 μm.

[0404] In an exemplary embodiment, after chemical etching, the maximum particle depth on the glass substrate is 12.7 μm, and the maximum difference in depth dimensions between particles is 3.4 μm.

[0405] In an exemplary embodiment, a solution with a 5%wt mass ratio of sodium hydroxide is used to remove the photoresist, and the treatment time is 1 min.

[0406] In an exemplary embodiment, a chromium etching solution is used to remove the metal chromium layer, and the treatment time is 5 min.

[0407] In an exemplary embodiment, the glass substrate on the side where the mask layer is removed is chemically polished, and the polishing is stopped when the transmission haze reaches 22.4%.

[0408] In an exemplary embodiment, the polishing solution comprises, by mass parts: 55 parts of sodium hydroxide, 45 parts of deionized water, the temperature of the polishing solution is 123 °C, and the polishing time is 62 min.

[0409] In an exemplary embodiment, the surface particle depth of the anti-glare glass obtained after polishing is 0.6 - 3.9 μm, the maximum difference in depth dimensions between particles is 3.3 μm, the particle diameter is 41.9 - 86.2 μm, and the maximum difference in diameter dimensions between particles is 44.3 μm.

[0410] In an exemplary embodiment, for the anti-glare glass of the embodiment of the present application, the specular gloss at a 60-degree angle: 26.1 GU; DOI: 0.8%; haze: 22.4%; roughness: 0.69 μm; flash point: none; moiré pattern: none.

[0411] Example 17 In an exemplary embodiment, first, a 200-nm-thick chromium metal film layer is deposited on one side of the clean glass by vacuum evaporation, and then a 2-μm-thick photoresist is coated on the surface of the chromium film layer by roll coating.

[0412] In an exemplary embodiment, the chromium metal film layer is deposited by a planar continuous vacuum evaporation machine with a power of 5 KW and a linear speed of 7 mm / s.

[0413] In an exemplary embodiment, a pattern is preset on the photoresist surface by exposure and development, and the pattern distribution rules are as follows: a via array composed of multiple parallel columns of vias.

[0414] In an exemplary embodiment, the diameter of the via is 7 - 13 μm, that is, the difference between the maximum diameter and the minimum diameter of the via is 6 μm, and the number of vias is evenly distributed among 7 μm, 8 μm, 9 μm, 10 μm, 11 μm, 12 μm, and 13 μm, that is, the number of vias is the same when the diameter is 7 μm, 8 μm, 9 μm, 10 μm, 11 μm, 12 μm, and 13 μm.

[0415] In an exemplary embodiment, the center distance between adjacent vias on each column of the via array composed of multiple columns of vias is 50 μm.

[0416] In an exemplary embodiment, the vertical distance between adjacent columns on the via array is 50 times cos30°, that is, 43.30 μm.

[0417] In an exemplary embodiment, the pattern on the photoresist surface is transferred to the metal chromium layer using a chromium etchant, and the corresponding hole pattern array is exposed on the metal chromium layer until the corresponding hole pattern array of the glass substrate is exposed.

[0418] In an exemplary embodiment, the chromium etchant is composed of ammonium cerium nitrate, glacial acetic acid, and deionized water, where the mass fraction of ammonium cerium nitrate is 16%wt, the mass fraction of glacial acetic acid is 3%wt, the mass fraction of deionized water is 81%wt, and the etching time is 3 min.

[0419] In an exemplary embodiment, an acid-resistant PET protective film is attached to the side of the glass substrate without the mask layer, and a solution with a mass fraction of 3%wt of hydrofluoric acid is used to perform surface activation treatment on the side of the glass substrate with the mask layer by the spraying method, with a treatment temperature of 35°C and a treatment time of 60 s.

[0420] In an exemplary embodiment, the glass substrate with the mask layer on one side is chemically etched using an alkaline etchant, and after the etching is completed, the glass substrate is cleaned.

[0421] In an exemplary embodiment, the etchant includes, by mass parts: 48 parts of sodium hydroxide, 30 parts of glycerol, and 50 parts of deionized water, with an etching time of 14 min and an etchant temperature of 123°C.

[0422] In an exemplary embodiment, after chemical etching, the particle depth on the glass substrate is 8.5 - 12.9 μm.

[0423] In an exemplary embodiment, after chemical etching, the maximum particle depth on the glass substrate is 12.9 μm, and the maximum difference in depth dimensions between particles is 4.4 μm.

[0424] In an exemplary embodiment, a solution with a 5%wt sodium hydroxide mass ratio is used to remove the photoresist, and the treatment time is 1 min.

[0425] In an exemplary embodiment, a chromium etchant is used to remove the metal chromium layer, and the treatment time is 5 min.

[0426] In an exemplary embodiment, chemical polishing is performed on the side of the glass substrate from which the mask layer has been removed, and the polishing is stopped when the transmission haze reaches 29.2%.

[0427] In an exemplary embodiment, the polishing liquid includes, by mass parts: 53 parts of sodium hydroxide and 48 parts of deionized water. The temperature of the polishing liquid is 125 °C, and the polishing time is 65 min.

[0428] In an exemplary embodiment, the surface particle depth of the anti-glare glass obtained after polishing is 1.6 - 4.7 μm, the maximum difference in depth dimensions between particles is 3.1 μm, the particle diameter is 54.6 - 96.5 μm, and the maximum difference in diameter dimensions between particles is 41.9 μm.

[0429] In an exemplary embodiment, for the anti-glare glass of the embodiment of the present application, the specular gloss at a 60-degree angle: 23.6 GU; DOI: 0.3%; haze: 29.2%; roughness: 0.815 μm; flash point: none; moiré: none.

[0430] Example 18 In an exemplary embodiment, first, a 200-nm-thick chromium metal film layer is deposited on one side of the clean glass by vacuum evaporation, and then a 2-μm-thick photoresist is coated on the surface of the chromium film layer by roll coating.

[0431] In an exemplary embodiment, the chromium metal film layer is deposited using a planar continuous vacuum evaporation machine with a power of 5 KW and a linear speed of 7 mm / s.

[0432] In an exemplary embodiment, then a preset pattern is formed on the surface of the photoresist by exposure and development, and the pattern distribution rule is as follows: a via array composed of multiple parallel columns of vias.

[0433] In an exemplary embodiment, the diameter of the through-hole is 7 - 13 μm, that is, the difference between the maximum diameter and the minimum diameter of the through-hole is 6 μm, and the diameter value gradient of the through-hole is 1 μm. That is, the through-hole diameters are 7 μm, 8 μm, 9 μm, 10 μm, 11 μm, 12 μm, and 13 μm. The through-hole diameters are normally distributed or approximately normally distributed with 10 μm as the central value. Among them, the aperture ratio of 9 - 11 μm accounts for about 50%, the aperture ratio of 7 - 8 μm accounts for about 25%, and the aperture ratio of 12 - 13 μm accounts for about 25%.

[0434] In an exemplary embodiment, the center distance between adjacent holes on each column of the through-hole array composed of multiple columns of through-holes is 110 μm.

[0435] In an exemplary embodiment, the vertical distance between adjacent columns on the through-hole array is 110 times cos30°, that is, 95.26 μm.

[0436] In an exemplary embodiment, a chromium etching solution is used to transfer the surface pattern of the photoresist onto the metal chromium layer, and the corresponding hole pattern array is exposed on the metal chromium layer until the corresponding hole pattern array of the glass substrate is exposed.

[0437] In an exemplary embodiment, the chromium etching solution is composed of ammonium cerium nitrate, glacial acetic acid, and deionized water. Among them, the mass fraction of ammonium cerium nitrate is 16%wt, the mass fraction of glacial acetic acid is 3%wt, the mass fraction of deionized water is 81%wt, and the etching time is 3 min.

[0438] In an exemplary embodiment, an acid-resistant PET protective film is attached to the side of the glass substrate without a mask layer, and a solution with a mass fraction of 3%wt of hydrofluoric acid is used to perform surface activation treatment on the side of the glass substrate with a mask layer by the spraying method. The treatment temperature is 35°C, and the treatment time is 60 s.

[0439] In an exemplary embodiment, a fluorine-containing acidic etching solution is used to chemically etch the side of the glass substrate with a mask layer, and after the etching is completed, the glass substrate is cleaned.

[0440] In an exemplary embodiment, the etching solution includes, by mass parts: 15 parts of ammonium bifluoride, 3 parts of potassium bifluoride, 33 parts of glycerol, and 35 parts of deionized water. The etching time is 18 min, and the temperature of the etching solution is 21°C.

[0441] In an exemplary embodiment, after chemical etching, the particle depth on the glass substrate is 11.8 - 17 μm.

[0442] In an exemplary embodiment, after chemical etching, the maximum particle depth on the glass substrate is 17 μm, and the maximum difference in depth dimensions between particles is 5.2 μm.

[0443] In an exemplary embodiment, a solution with a 5%wt sodium hydroxide content is used to remove the photoresist, and the treatment time is 1 min.

[0444] In an exemplary embodiment, a chromium etchant is used to remove the metal chromium layer, and the treatment time is 5 min.

[0445] In an exemplary embodiment, chemical polishing is performed on the glass substrate on the side where the mask layer is removed, and the polishing is stopped when the transmission haze reaches 46.2%.

[0446] In an exemplary embodiment, the polishing solution includes, by mass parts: 10 parts of hydrofluoric acid, 10 parts of sulfuric acid, and 68 parts of deionized water. The temperature of the polishing solution is 33°C, and the polishing time is 63 min.

[0447] In an exemplary embodiment, the surface particle depth of the anti-glare glass obtained after polishing is 5.3 - 6.8 μm, the maximum difference in the depth dimension between particles is 1.5 μm, the particle diameter is 113.1 - 131.8 μm, and the maximum difference in the diameter dimension between particles is 18.7 μm.

[0448] In an exemplary embodiment, for the anti-glare glass of the embodiment of the present application, the specular gloss at a 60-degree angle is 18.1 GU; the DOI is 0.8%; the haze is 46.2%; the roughness is 1.516 μm; the flash point is none; and moiré is none.

[0449] Example 19 In an exemplary embodiment, first, a 200-nm-thick chromium metal film layer is deposited on one side of a clean glass by vacuum evaporation, and then a 2-μm-thick photoresist layer is coated on the surface of the chromium film layer by roll coating.

[0450] In an exemplary embodiment, a planar continuous vacuum evaporation machine is used for the chromium metal film layer, with a power of 5 KW and a linear speed of 7 mm / s.

[0451] In an exemplary embodiment, then a pattern is preset on the surface of the photoresist by exposure and development, and the pattern distribution rules are as follows: a through-hole array composed of multiple parallel columns of through-holes.

[0452] In an exemplary embodiment, the diameter of the through-holes is 10 - 16 μm, that is, the difference between the maximum diameter and the minimum diameter of the through-holes is 6 μm. The number of through-holes is evenly distributed among 10 μm, 11 μm, 12 μm, 13 μm, 14 μm, 15 μm, and 16 μm, that is, the number of through-holes at diameters of 10 μm, 11 μm, 12 μm, 13 μm, 14 μm, 15 μm, and 16 μm is the same, that is, each accounts for one-seventh of the total number of through-holes.

[0453] In an exemplary embodiment, the center distance between adjacent vias on each column of a via array composed of multiple columns of vias is 90 μm.

[0454] In an exemplary embodiment, the vertical distance between adjacent columns on the via array is 90 times cos30°, that is, 77.94 μm.

[0455] In an exemplary embodiment, a photoresist surface pattern is transferred onto a metal chromium layer using a chromium etching solution, and the corresponding hole pattern array is exposed on the metal chromium layer until the corresponding hole pattern array on the glass substrate is exposed.

[0456] In an exemplary embodiment, the chromium etching solution is composed of ammonium cerium nitrate, glacial acetic acid, and deionized water, where the mass fraction of ammonium cerium nitrate is 16% wt, the mass fraction of glacial acetic acid is 3% wt, the mass fraction of deionized water is 81% wt, and the etching time is 3 min.

[0457] In an exemplary embodiment, an acid-resistant PET protective film is attached to the side of the glass substrate without a mask layer, and a solution with a hydrogen fluoride mass fraction of 3% wt is used to perform surface activation treatment on the side of the glass substrate with a mask layer by the spraying method, with a treatment temperature of 35 °C and a treatment time of 60 s.

[0458] In an exemplary embodiment, a chemical etching is performed on the side of the glass substrate with a mask layer using an alkaline etching solution, and after the etching is completed, the glass substrate is cleaned.

[0459] In an exemplary embodiment, the etching solution includes, by mass parts: 50 parts of sodium hydroxide, 20 parts of glycerol, and 45 parts of deionized water, with an etching time of 18.5 min and an etching solution temperature of 125 °C.

[0460] In an exemplary embodiment, after chemical etching, the particle depth on the glass substrate is 11.4 - 16.9 μm.

[0461] In an exemplary embodiment, after chemical etching, the maximum particle depth on the glass substrate is 16.9 μm, and the maximum difference in depth dimensions between particles is 5.5 μm.

[0462] In an exemplary embodiment, a solution with a sodium hydroxide mass fraction of 5% wt is used to remove the photoresist, with a treatment time of 1 min.

[0463] In an exemplary embodiment, a chromium etching solution is used to remove the metal chromium layer, with a treatment time of 5 min.

[0464] In an exemplary embodiment, chemical polishing is performed on the side of the glass substrate from which the mask layer has been removed, and the polishing is stopped when the transmission haze reaches 70.5%.

[0465] In an exemplary embodiment, the polishing liquid comprises, by mass parts: 10 parts of hydrofluoric acid, 10 parts of sulfuric acid, 68 parts of deionized water. The temperature of the polishing liquid is 33 °C and the polishing time is 51 min.

[0466] In an exemplary embodiment, the surface particle depth of the anti-glare glass obtained after polishing is 4.1 - 8.4 m, the maximum difference in depth dimensions between particles is 4.3 μm, the particle diameter is 95.9 - 123.4 μm, and the maximum difference in diameter dimensions between particles is 27.5 μm.

[0467] In an exemplary embodiment, for the anti-glare glass of the embodiment of the present application, the specular gloss at a 60-degree angle is 17.6 GU; the distinctness of image is 0.4%; the haze is 70.5%; the surface roughness is 1.65 μm; there is no flash point; and there is no moiré pattern.

[0468] Example 20 In an exemplary embodiment, first, a chromium metal film layer with a thickness of 200 nm is deposited on one side of a clean glass by vacuum evaporation, and then a layer of photoresist with a thickness of 2 μm is coated on the surface of the chromium film layer by roll coating.

[0469] In an exemplary embodiment, the chromium metal film layer is deposited by a planar continuous vacuum evaporation machine with a power of 5 KW and a linear velocity of 7 mm / s.

[0470] In an exemplary embodiment, then a preset pattern is formed on the surface of the photoresist by exposure and development. The pattern distribution rule is as follows: a via hole array composed of multiple parallel columns of via holes.

[0471] In an exemplary embodiment, the diameter of the via holes is 13 - 19 μm, that is, the difference between the maximum diameter and the minimum diameter of the via holes is 6 μm. The diameter value gradient of the via holes is 1 μm, that is, the diameter values of the via holes are 13 μm, 14 μm, 15 μm, 16 μm, 17 μm, 18 μm, and 19 μm. The diameter of the via holes is normally distributed or approximately normally distributed with 16 μm as the central value. Among them, the aperture ratio of 15 - 17 μm accounts for about 50%, the aperture ratio of 13 - 14 μm accounts for about 25%, and the aperture ratio of 18 - 19 μm accounts for about 25%.

[0472] In an exemplary embodiment, the center distance between adjacent holes in each column of the via hole array composed of multiple columns of via holes is 90 μm.

[0473] In an exemplary embodiment, the vertical distance between adjacent columns in the via hole array is 90 times cos30°, that is, 77.94 μm.

[0474] In an exemplary embodiment, the pattern on the photoresist surface is transferred to the metal chromium layer using a chromium etchant, and the corresponding hole array pattern is exposed on the metal chromium layer until the corresponding hole array pattern on the glass substrate is exposed.

[0475] In an exemplary embodiment, the chromium etchant is composed of ammonium cerium nitrate, glacial acetic acid, and deionized water, where the mass fraction of ammonium cerium nitrate is 16%wt, the mass fraction of glacial acetic acid is 3%wt, the mass fraction of deionized water is 81%wt, and the etching time is 3 min.

[0476] In an exemplary embodiment, an acid-resistant PET protective film is attached to the side of the glass substrate without the mask layer, and a solution with a mass fraction of 3%wt of hydrofluoric acid is used to perform surface activation treatment on the side of the glass substrate with the mask layer by the spraying method, with a treatment temperature of 35°C and a treatment time of 60 s.

[0477] In an exemplary embodiment, the side of the glass substrate with the mask layer is chemically etched using an alkaline etchant, and after etching, the glass substrate is cleaned.

[0478] In an exemplary embodiment, the etchant includes, by mass parts: 52 parts of sodium hydroxide, 20 parts of glycerol, and 45 parts of deionized water, with an etching time of 19 min and an etchant temperature of 120°C.

[0479] In an exemplary embodiment, after chemical etching, the particle depth on the glass substrate is 12.8 - 17.5 μm.

[0480] In an exemplary embodiment, after chemical etching, the maximum particle depth on the glass substrate is 17.5 μm, and the maximum difference in depth dimensions between particles is 4.7 μm.

[0481] In an exemplary embodiment, a solution with a mass fraction of 5%wt of sodium hydroxide is used to remove the photoresist, with a treatment time of 1 min.

[0482] In an exemplary embodiment, the metal chromium layer is removed using a chromium etchant, with a treatment time of 5 min.

[0483] In an exemplary embodiment, the side of the glass substrate from which the mask layer has been removed is chemically polished until the transmission haze reaches 35.3% and then stopped.

[0484] In an exemplary embodiment, the polishing solution includes, by mass parts: 52 parts of sodium hydroxide and 45 parts of deionized water, with a polishing solution temperature of 124°C and a polishing time of 70 min.

[0485] In an exemplary embodiment, the surface particle depth of the anti-glare glass obtained after polishing is 3.4 - 5.3 μm, the maximum difference in the depth dimension between particles is 1.9 μm, the particle diameter is 90.1 - 120.6 μm, and the maximum difference in the diameter dimension between particles is 30.5 μm.

[0486] In an exemplary embodiment, for the anti-glare glass of the embodiment of the present application, the specular gloss at a 60-degree angle is 18.9 GU; the DOI is 0.5%; the haze is 35.3%; the surface roughness is 1.219 μm; there is no flash point; and there is no moiré.

[0487] Example 21 In an exemplary embodiment, first, a chromium metal film layer with a thickness of 200 nm is deposited on one side of a clean glass by vacuum evaporation, and then a photoresist layer with a thickness of 2 μm is coated on the surface of the chromium film layer by roll coating. The chromium metal film layer is deposited using a planar continuous vacuum evaporation machine with a power of 5 KW and a linear speed of 7 mm / s.

[0488] In an exemplary embodiment, then a preset pattern is formed on the surface of the photoresist by exposure and development, and the pattern distribution rules are as follows: a via array composed of multiple parallel columns of vias.

[0489]

[0490] In an exemplary embodiment, the diameter of the vias is 16 - 22 μm, that is, the difference between the maximum diameter and the minimum diameter of the vias is 6 μm, the diameter value gradient of the vias is 1 μm, that is, the diameter values of the vias are 16 μm, 17 μm, 18 μm, 19 μm, 20 μm, 21 μm, and 22 μm, and the diameter of the vias is normally distributed or approximately normally distributed with 19 μm as the central value. Among them, the aperture ratio of 18 - 20 μm accounts for about 50%, the aperture ratio of 16 - 17 μm accounts for about 25%, and the aperture ratio of 21 - 22 μm accounts for about 25%.

[0491] In an exemplary embodiment, the center distance between adjacent holes in each column of the via array composed of multiple columns of vias is 90 μm.

[0492] In an exemplary embodiment, a chromium etchant is used to transfer the pattern on the surface of the photoresist to the metal chromium layer, and the corresponding hole pattern array is exposed on the metal chromium layer until the corresponding hole pattern array of the glass substrate is exposed.

[0493] ​In an exemplary embodiment, the chromium etchant is composed of ammonium cerium nitrate, glacial acetic acid, and deionized water, where the mass fraction of ammonium cerium nitrate is 16%wt, the mass fraction of glacial acetic acid is 3%wt, the mass fraction of deionized water is 81%wt, and the etching time is 3 min.

[0494] In an exemplary embodiment, an acid-resistant PET protective film is attached to the side of the glass substrate without a mask layer, and a solution with a mass fraction of 3%wt of hydrofluoric acid is used to perform surface activation treatment on the side of the glass substrate with a mask layer by the spraying method. The treatment temperature is 35°C, and the treatment time is 60 s.

[0495] In an exemplary embodiment, an alkaline etchant is used to chemically etch the side of the glass substrate with a mask layer, and the glass substrate is cleaned after etching is completed.

[0496] In an exemplary embodiment, the etchant includes, by mass parts: 52 parts of sodium hydroxide, 20 parts of glycerol, and 45 parts of deionized water. The etching time is 23.5 min, and the temperature of the etchant is 120°C.

[0497] In an exemplary embodiment, after chemical etching, the particle depth on the glass substrate is 14.3 - 19.8 μm.

[0498] In an exemplary embodiment, after chemical etching, the maximum particle depth on the glass substrate is 19.8 μm, and the maximum difference in depth dimensions between particles is 5.5 μm.

[0499] In an exemplary embodiment, a solution with a mass fraction of 5%wt of sodium hydroxide is used to remove the photoresist, and the treatment time is 1 min.

[0500] In an exemplary embodiment, a chromium etchant is used to remove the metal chromium layer, and the treatment time is 5 min.

[0501] In an exemplary embodiment, chemical polishing is performed on the side of the glass substrate from which the mask layer has been removed, and the polishing is stopped when the transmission haze reaches 6.7%.

[0502] In an exemplary embodiment, the polishing solution includes, by mass parts: 55 parts of sodium hydroxide and 43 parts of deionized water. The temperature of the polishing solution is 118°C, and the polishing time is 160 min.

[0503] In an exemplary embodiment, the surface particle depth of the anti-glare glass obtained after polishing is 0.3 - 3.2 μm, the maximum difference in depth dimensions between particles is 2.9 μm, the particle diameter is 106.7 - 142.9 μm, and the maximum difference in diameter dimensions between particles is 36.2 μm.

[0504] In an exemplary embodiment, for the anti-glare glass of the embodiments of the present application, the specular gloss at a 60-degree angle is 65.1 GU; the DOI is 0.9%; the haze is 6.7%; the surface roughness is 0.621 μm; there is no flash point; and there is no moiré pattern.

[0505] Example 22

[0506] In an exemplary embodiment, first, a chromium metal film layer with a thickness of 200 nm is deposited on one side of a clean glass by vacuum evaporation, and then a layer of photoresist with a thickness of 2 μm is coated on the surface of the chromium film layer by roll coating.

[0507] In an exemplary embodiment, a planar continuous vacuum evaporation machine is used for the chromium metal film layer, with a power of 5 KW and a linear speed of 7 mm / s.

[0508] In an exemplary embodiment, then a preset pattern is formed on the surface of the photoresist by exposure and development, and the pattern distribution rule is as follows: a through-hole array composed of multiple parallel columns of through-holes.

[0509] In an exemplary embodiment, the diameter of the through-holes is 19 - 25 μm, that is, the difference between the maximum diameter and the minimum diameter of the through-holes is 6 μm. The number of through-holes is evenly distributed among 19 μm, 20 μm, 21 μm, 22 μm, 23 μm, 24 μm, and 25 μm, that is, the number of through-holes at diameters of 19 μm, 20 μm, 21 μm, 22 μm, 23 μm, 24 μm, and 25 μm is the same, each accounting for one-seventh of the total number of through-holes.

[0510] In an exemplary embodiment, the center distance between adjacent through-holes in each column of the through-hole array composed of multiple columns of through-holes is 90 μm.

[0511] In an exemplary embodiment, the vertical distance between adjacent columns in the through-hole array is 90 times cos30°, that is, 77.94 μm.

[0512] In an exemplary embodiment, a chromium etching solution is used to transfer the pattern on the surface of the photoresist to the metal chromium layer, and the corresponding hole pattern array is exposed on the metal chromium layer until the corresponding hole pattern array is exposed on the glass substrate.

[0513] In an exemplary embodiment, the chromium etching solution is composed of ammonium cerium nitrate, glacial acetic acid, and deionized water, where the mass fraction of ammonium cerium nitrate is 16% wt, the mass fraction of glacial acetic acid is 3% wt, the mass fraction of deionized water is 81% wt, and the etching time is 3 min.

[0514] In an exemplary embodiment, an acid-resistant PET protective film is attached to the side of the glass substrate without the mask layer, and a solution with a mass fraction of 3%wt of hydrofluoric acid is used to perform surface activation treatment on the side of the glass substrate with the mask layer by the spraying method. The treatment temperature is 35°C and the treatment time is 60s.

[0515] In an exemplary embodiment, a fluorine-containing acidic etching solution is used to chemically etch the side of the glass substrate with the mask layer, and the glass substrate is cleaned after etching.

[0516] In an exemplary embodiment, the etching solution includes, by mass parts: 14 parts of ammonium bifluoride, 4 parts of potassium bifluoride, 35 parts of glycerol, 35 parts of deionized water, the etching time is 22.5min, and the temperature of the etching solution is 20°C.

[0517] In an exemplary embodiment, after chemical etching, the particle depth on the glass substrate is 13.5 - 19.2μm.

[0518] In an exemplary embodiment, after chemical etching, the maximum particle depth on the glass substrate is 19.2μm, and the maximum difference in depth dimensions between particles is 5.7μm.

[0519] In an exemplary embodiment, a solution with a mass fraction of 5%wt of sodium hydroxide is used to remove the photoresist, and the treatment time is 1min.

[0520] In an exemplary embodiment, a chromium etching solution is used to remove the metal chromium layer, and the treatment time is 5min.

[0521] In an exemplary embodiment, the side of the glass substrate from which the mask layer has been removed is chemically polished, and the polishing is stopped when the transmittance haze reaches 31.7%.

[0522] In an exemplary embodiment, the polishing solution includes, by mass parts: 58 parts of sodium hydroxide, 43 parts of deionized water, the temperature of the polishing solution is 120°C, and the polishing time is 131min.

[0523] In an exemplary embodiment, the surface particle depth of the anti-glare glass obtained after polishing is 3.5 - 6.9μm, the maximum difference in depth dimensions between particles is 3.4μm, the particle diameter is 92.4 - 128.3μm, and the maximum difference in diameter dimensions between particles is 35.9μm.

[0524] In an exemplary embodiment, for the anti-glare glass of the embodiment of the present application, the specular gloss at a 60-degree angle: 20.8GU; DOI: 0.7%; haze: 31.7%; roughness: 1.171μm; flash point: none; moiré: none.

[0525] Example 23 In an exemplary embodiment, first, a chromium metal film layer with a thickness of 200 nm is deposited on one side of a clean glass by vacuum evaporation, and then a layer of photoresist with a thickness of 2 μm is coated on the surface of the chromium film layer by roll coating.

[0526] In an exemplary embodiment, the chromium metal film layer is deposited by a planar continuous vacuum evaporation machine with a power of 5 KW and a linear speed of 7 mm / s.

[0527] In an exemplary embodiment, then a preset pattern is formed on the surface of the photoresist by exposure and development, and the pattern distribution rules are as follows: a via array composed of multiple parallel columns of vias.

[0528] In an exemplary embodiment, the diameter of the vias is 19 - 25 μm, that is, the difference between the maximum diameter and the minimum diameter of the vias is 6 μm, and the diameter value gradient of the vias is 1 μm, that is, the via diameters are 19 μm, 20 μm, 21 μm, 22 μm, 23 μm, 24 μm, and 25 μm. The via diameters are normally distributed or approximately normally distributed with 22 μm as the central value, where the aperture ratio of 21 - 23 μm accounts for about 50%, the aperture ratio of 19 - 20 μm accounts for about 25%, and the aperture ratio of 24 - 25 μm accounts for about 25%.

[0529] In an exemplary embodiment, the center distance between adjacent holes in each column of the via array composed of multiple columns of vias is 110 μm.

[0530] In an exemplary embodiment, the vertical distance between adjacent columns in the via array is 110 times cos30°, that is, 95.26 μm.

[0531] In an exemplary embodiment, a chromium etchant is used to transfer the pattern on the surface of the photoresist to the metal chromium layer, and the corresponding hole pattern array is exposed on the metal chromium layer until the corresponding hole pattern array of the glass substrate is exposed.

[0532] In an exemplary embodiment, the chromium etchant is composed of ammonium cerium nitrate, glacial acetic acid, and deionized water, where the mass fraction of ammonium cerium nitrate is 16% wt, the mass fraction of glacial acetic acid is 3% wt, the mass fraction of deionized water is 81% wt, and the etching time is 3 min.

[0533] In an exemplary embodiment, a acid - resistant PET protective film is attached to the side of the glass substrate without a mask layer, and a solution with a mass fraction of 3% wt of hydrofluoric acid is used to perform surface activation treatment on the side of the glass substrate with a mask layer by the spray method, with a treatment temperature of 35 °C and a treatment time of 60 s.

[0534] In an exemplary embodiment, an alkaline etchant is used to chemically etch the side of the glass substrate with a mask layer, and after etching, the glass substrate is cleaned.

[0535] In an exemplary embodiment, the etching solution comprises, by mass parts: 55 parts of sodium hydroxide, 30 parts of glycerol, 45 parts of deionized water, an etching time of 23 min, and an etching solution temperature of 115 °C.

[0536] In an exemplary embodiment, after chemical etching, the particle depth on the glass substrate is 12.4 - 17.6 μm.

[0537] In an exemplary embodiment, after chemical etching, the maximum particle depth on the glass substrate is 17.6 μm, and the maximum difference in depth dimensions between particles is 5.2 μm.

[0538] In an exemplary embodiment, a solution with a 5%wt sodium hydroxide mass ratio is used to remove the photoresist, and the treatment time is 1 min.

[0539] In an exemplary embodiment, a chromium etching solution is used to remove the metal chromium layer, and the treatment time is 5 min.

[0540] In an exemplary embodiment, the side of the glass substrate from which the mask layer has been removed is chemically polished until the transmission haze reaches 57.8% and then stopped.

[0541] In an exemplary embodiment, the polishing solution comprises, by mass parts: 58 parts of sodium hydroxide, 43 parts of deionized water, the temperature of the polishing solution is 125 °C, and the polishing time is 97 min.

[0542] In an exemplary embodiment, the surface particle depth of the anti-glare glass obtained after polishing is 5.3 - 9.9 μm, the maximum difference in depth dimensions between particles is 4.6 μm, the particle diameter is 112.7 - 125.7 μm, and the maximum difference in diameter dimensions between particles is 13 μm.

[0543] In an exemplary embodiment, for the anti-glare glass of the embodiment of the present application, the specular gloss at a 60-degree angle: 15.6 GU; DOI: 0.1%; haze: 57.8%; roughness: 1.416 μm; flash point: none; moiré pattern: none.

[0544] Example 24 In an exemplary embodiment, first, a 200-nm-thick chromium metal film layer is deposited on one side of the clean glass by vacuum evaporation, and then a 2-μm-thick photoresist layer is coated on the surface of the chromium film layer by roll coating.

[0545] In an exemplary embodiment, the chromium metal film layer is deposited using a planar continuous vacuum evaporation machine with a power of 5 KW and a linear speed of 7 mm / s.

[0546] In an exemplary embodiment, a pattern is preset on the surface of the photoresist by exposure and development, and the pattern distribution rule is as follows: a via array composed of multiple columns of vias arranged in parallel.

[0547] In an exemplary embodiment, the diameter of the via is 26 - 34 μm, that is, the difference between the maximum diameter and the minimum diameter of the via is 8 μm. The number of vias is evenly distributed among 26 μm, 27 μm, 28 μm, 29 μm, 30 μm, 31 μm, 32 μm, 33 μm, and 34 μm, that is, the number of vias at diameters of 26 μm, 27 μm, 28 μm, 29 μm, 30 μm, 31 μm, 32 μm, 33 μm, and 34 μm is the same, that is, each accounts for one-ninth of the total number of vias.

[0548] In an exemplary embodiment, the center distance between adjacent vias in each column of the via array composed of multiple columns of vias is 100 μm.

[0549] In an exemplary embodiment, the vertical distance between adjacent columns in the via array is 100 times cos30°, that is, 86.60 μm.

[0550] In an exemplary embodiment, the pattern on the surface of the photoresist is transferred to the metal chromium layer using a chromium etching solution, and the corresponding hole pattern array is exposed on the metal chromium layer until the corresponding hole pattern array of the glass substrate is exposed.

[0551] In an exemplary embodiment, the chromium etching solution is composed of ammonium cerium nitrate, glacial acetic acid, and deionized water, where the mass fraction of ammonium cerium nitrate is 16%wt, the mass fraction of glacial acetic acid is 3%wt, the mass fraction of deionized water is 81%wt, and the etching time is 3 min.

[0552] In an exemplary embodiment, an acid-resistant PET protective film is attached to the side of the glass substrate without the mask layer, and a solution with a mass fraction of 3%wt of hydrofluoric acid is used to perform surface activation treatment on the side of the glass substrate with the mask layer by the spraying method, with a treatment temperature of 35°C and a treatment time of 60 s.

[0553] In an exemplary embodiment, the side of the glass substrate with the mask layer is chemically etched using an alkaline etching solution, and after the etching is completed, the glass substrate is cleaned.

[0554] In an exemplary embodiment, the etching solution includes, by mass parts: 55 parts of sodium hydroxide, 25 parts of glycerol, and 45 parts of deionized water, with an etching time of 21 min and an etching solution temperature of 124°C.

[0555] In an exemplary embodiment, after chemical etching, the particle depth on the glass substrate is 10.3 - 19.6 μm.

[0556] In an exemplary embodiment, after chemical etching, the maximum particle depth on the glass substrate is 19.6 μm, and the maximum difference in depth dimensions between particles is 9.3 μm.

[0557] In an exemplary embodiment, a solution with a 5%wt sodium hydroxide mass ratio is used to remove the photoresist, and the treatment time is 1 min.

[0558] In an exemplary embodiment, a chromium etchant is used to remove the metal chromium layer, and the treatment time is 5 min.

[0559] In an exemplary embodiment, the side of the glass substrate from which the mask layer has been removed is chemically polished and stopped when the transmission haze reaches 49.2%.

[0560] In an exemplary embodiment, the polishing liquid includes, by mass parts: 58 parts of sodium hydroxide and 43 parts of deionized water. The temperature of the polishing liquid is 119 °C, and the polishing time is 135 min.

[0561] In an exemplary embodiment, the surface particle depth of the anti-glare glass obtained after polishing is 5.9 - 11.2 μm, the maximum difference in depth dimensions between particles is 5.3 μm, the particle diameter is 102.7 - 127.6 μm, and the maximum difference in diameter dimensions between particles is 24.9 μm.

[0562] In an exemplary embodiment, for the anti-glare glass of the embodiment of the present application, the specular gloss at a 60-degree angle: 16 GU; DOI: 0.2%; haze: 49.2%; roughness: 1.937 μm; flash point: none; moiré: none.

[0563] Example 25 In an exemplary embodiment, first, a 200-nm-thick chromium metal film layer is deposited on one side of a clean glass by vacuum evaporation, and then a 2-μm-thick photoresist is coated on the surface of the chromium film by roll coating. The chromium metal film layer is deposited using a planar continuous vacuum evaporation machine with a power of 5 KW and a linear speed of 7 mm / s.

[0564] In an exemplary embodiment, then a pattern is preset on the surface of the photoresist by exposure and development, and the pattern distribution rule is as follows: a through-hole array composed of multiple parallel columns of through-holes.

[0565] In an exemplary embodiment, the diameter of the through hole is 26-34 μm, that is, the difference between the maximum diameter and the minimum diameter of the through hole is 8 μm, and the gradient of the diameter of the through hole is 1 μm, that is, the diameter of the through hole is 26 μm, 27 μm, 28 μm, 29 μm, 30 μm, 31 μm, 32 μm, 33 μm and 34 μm, and the diameter of the through hole is normally distributed or similar to a normal distribution with 30 μm as the center value, among which the pore diameter of 29-31 μm accounts for approximately 34%, the pore diameter of 26-28 μm accounts for approximately 33%, and the pore diameter of 32-34 μm accounts for approximately 33%.

[0566] In an exemplary embodiment, the center distance between adjacent holes in each column of the through-hole array consisting of multiple columns of through-holes is 120 μm.

[0567] In an exemplary embodiment, the vertical distance between adjacent columns on the through-hole array is 120 times cos30°, or 103.92 μm.

[0568] In an exemplary embodiment, a chromium etching solution is used to transfer the surface pattern of the photoresist to the metal chromium layer, and a corresponding hole array pattern is exposed on the metal chromium layer until the glass substrate exposes the corresponding hole array pattern.

[0569] In an exemplary embodiment, the chromium etching solution is composed of ammonium cerium nitrate, glacial acetic acid, and deionized water, wherein the mass fraction of ammonium cerium nitrate is 16%wt, the mass fraction of glacial acetic acid is 3%wt, and the mass fraction of deionized water is 81%wt, and the etching time is 3 minutes.

[0570] In an exemplary embodiment, an acid-resistant PET protective film is attached to the side of the glass substrate without the mask layer, and a hydrofluoric acid solution with a mass percentage of 3% by weight is sprayed to activate the surface of the glass substrate with the mask layer at a treatment temperature of 35° C. for 60 seconds.

[0571] In an exemplary embodiment, a fluorine-containing acidic etching solution is used to chemically etch the glass substrate on the side with the mask layer, and the glass substrate is cleaned after the etching is completed.

[0572] In an exemplary embodiment, the etching solution includes, by weight, 14 parts of ammonium bifluoride, 4 parts of potassium bifluoride, 35 parts of glycerol, and 35 parts of deionized water. The etching time is 24 minutes, and the etching solution temperature is 21°C.

[0573] In an exemplary embodiment, after chemical etching, the depth of the particles on the glass substrate is 11.5-19.7 μm.

[0574] In an exemplary embodiment, after chemical etching, the maximum particle depth on the glass substrate is 19.7 μm, and the maximum difference in depth dimensions between particles is 8.2 μm.

[0575] In an exemplary embodiment, a solution with a sodium hydroxide mass fraction of 5%wt is used to remove the photoresist, and the treatment time is 1 min.

[0576] In an exemplary embodiment, a chromium etchant is used to remove the metal chromium layer, and the treatment time is 5 min.

[0577] In an exemplary embodiment, the side of the glass substrate from which the mask layer has been removed is chemically polished until the transmission haze reaches 22.9% and then stopped.

[0578] In an exemplary embodiment, the polishing liquid includes, by mass parts: 12 parts of hydrofluoric acid, 12 parts of sulfuric acid, and 65 parts of deionized water. The temperature of the polishing liquid is 31 °C, and the polishing time is 173 min.

[0579] In an exemplary embodiment, the surface particle depth of the anti-glare glass obtained after polishing is 3.2 - 9.4 μm, the maximum difference in depth dimensions between particles is 6.2 μm, the particle diameter is 115.7 - 149.7 μm, and the maximum difference in diameter dimensions between particles is 34 μm.

[0580] In an exemplary embodiment, for the anti-glare glass of the embodiment of the present application, the specular gloss at a 60-degree angle is 26.6 GU; the DOI is 0.6%; the haze is 22.9%; the surface roughness is 1.697 μm; there is no flash point; and there is no moiré pattern.

[0581] Example 26 In an exemplary embodiment, first, a 200-nm-thick chromium metal film layer is deposited on one side of a clean glass by vacuum evaporation, and then a 2-μm-thick photoresist is coated on the surface of the chromium film by roll coating.

[0582] In an exemplary embodiment, a planar continuous vacuum evaporation machine is used for the chromium metal film layer, with a power of 5 KW and a linear speed of 7 mm / s.

[0583] In an exemplary embodiment, then a pattern is preset on the surface of the photoresist by exposure and development, and the pattern distribution rule is as follows: a via array composed of multiple columns of vias arranged in parallel.

[0584] In an exemplary embodiment, the diameter of the through-hole is 40 - 50 μm, that is, the difference between the maximum diameter and the minimum diameter of the through-hole is 10 μm. The number of through-holes is evenly distributed among 40 μm, 42 μm, 44 μm, 46 μm, 48 μm, and 50 μm, that is, the number of through-holes at diameters of 40 μm, 42 μm, 44 μm, 46 μm, 48 μm, and 50 μm is the same, each accounting for one-sixth of the total number of through-holes.

[0585] In an exemplary embodiment, the center distance between adjacent through-holes on each column of the through-hole array composed of multiple columns of through-holes is 120 μm.

[0586] In an exemplary embodiment, the vertical distance between adjacent columns on the through-hole array is 120 times cos30°, that is, 103.92 μm.

[0587] In an exemplary embodiment, a chromium etching solution is used to transfer the pattern on the photoresist surface to the metal chromium layer, and the corresponding hole pattern array is exposed on the metal chromium layer until the corresponding hole pattern array of the glass substrate is exposed.

[0588] In an exemplary embodiment, the chromium etching solution is composed of ammonium cerium nitrate, glacial acetic acid, and deionized water, where the mass fraction of ammonium cerium nitrate is 16%wt, the mass fraction of glacial acetic acid is 3%wt, the mass fraction of deionized water is 81%wt, and the etching time is 3 min.

[0589] In an exemplary embodiment, an acid-resistant PET protective film is attached to the side of the glass substrate without the mask layer, and a solution with a mass fraction of 3%wt of hydrofluoric acid is used to perform surface activation treatment on the side of the glass substrate with the mask layer by the spraying method, with a treatment temperature of 35°C and a treatment time of 60 s.

[0590] In an exemplary embodiment, a fluorine-containing acidic etching solution is used to chemically etch the side of the glass substrate with the mask layer, and the glass substrate is cleaned after etching.

[0591] In an exemplary embodiment, the etching solution includes, by mass parts: 14 parts of ammonium bifluoride, 4 parts of potassium bifluoride, 35 parts of glycerol, 35 parts of deionized water, an etching time of 22 min, and an etching solution temperature of 21°C.

[0592] In an exemplary embodiment, after chemical etching, the particle depth on the glass substrate is 8.9 - 19.5 μm.

[0593] In an exemplary embodiment, after chemical etching, the maximum particle depth on the glass substrate is 19.5 μm, and the maximum difference in the depth dimension between particles is 10.6 μm.

[0594] In an exemplary embodiment, a photoresist is removed using a solution with a 5%wt sodium hydroxide content, and the treatment time is 1 minute.

[0595] In an exemplary embodiment, a metal chromium layer is removed using a chromium etchant, and the treatment time is 5 minutes.

[0596] In an exemplary embodiment, chemical polishing is performed on the side of the glass substrate from which the mask layer has been removed, and the polishing is stopped when the transmission haze reaches 5.7%.

[0597] In an exemplary embodiment, the polishing liquid comprises, by mass parts: 12 parts of hydrofluoric acid, 10 parts of sulfuric acid, and 68 parts of deionized water. The temperature of the polishing liquid is 31°C, and the polishing time is 195 minutes.

[0598] In an exemplary embodiment, the surface particle depth of the anti-glare glass obtained after polishing is 1.5 - 6.7 m, the maximum difference in depth dimensions between particles is 5.2 μm, the particle diameter is 78.6 - 148.6 μm, and the maximum difference in diameter dimensions between particles is 70 μm.

[0599] In an exemplary embodiment, for the anti-glare glass of the embodiment of the present application, the specular gloss at a 60-degree angle is 68.4 GU; the DOI is 0.5%; the haze is 5.7%; the surface roughness is 1.297 μm; there is no flash point; and there is no moiré pattern.

[0600] Example 27 In an exemplary embodiment, first, a 200-nm-thick chromium metal film layer is deposited on one side of a clean glass by vacuum evaporation, and then a 2-μm-thick photoresist is coated on the surface of the chromium film layer by roll coating.

[0601] In an exemplary embodiment, the chromium metal film layer is deposited using a planar continuous vacuum evaporation machine with a power of 5 KW and a linear speed of 7 mm / s.

[0602] In an exemplary embodiment, a pattern is then preset on the surface of the photoresist by exposure and development. The pattern distribution rules are as follows: a via array composed of multiple parallel columns of vias.

[0603] In an exemplary embodiment, the diameter of the through-hole is 40 - 50 μm, that is, the difference between the maximum diameter and the minimum diameter of the through-hole is 10 μm. The number of through-holes is evenly distributed among 40 μm, 41 μm, 42 μm, 43 μm, 44 μm, 45 μm, 46 μm, 47 μm, 48 μm, 49 μm, and 50 μm. That is, the number of through-holes at diameters of 40 μm, 41 μm, 42 μm, 43 μm, 44 μm, 45 μm, 46 μm, 47 μm, 48 μm, 49 μm, and 50 μm is the same, each accounting for one-eleventh of the total number of through-holes.

[0604] In an exemplary embodiment, the center distance between adjacent through-holes on each column of a through-hole array composed of multiple columns of through-holes is 120 μm.

[0605] In an exemplary embodiment, the vertical distance between adjacent columns on the through-hole array is 120 times cos30°, that is, 103.92 μm.

[0606] In an exemplary embodiment, a chromium etching solution is used to transfer the pattern on the photoresist surface to the metal chromium layer, and the corresponding hole pattern array is exposed on the metal chromium layer until the corresponding hole pattern array of the glass substrate is exposed.

[0607] In an exemplary embodiment, the chromium etching solution is composed of ammonium cerium nitrate, glacial acetic acid, and deionized water. Among them, the mass fraction of ammonium cerium nitrate is 16%wt, the mass fraction of glacial acetic acid is 3%wt, the mass fraction of deionized water is 81%wt, and the etching time is 3 min.

[0608] In an exemplary embodiment, an acid-resistant PET protective film is attached to the side of the glass substrate without a mask layer, and a solution with a mass fraction of 3%wt of hydrofluoric acid is used to perform surface activation treatment on the side of the glass substrate with a mask layer by the spraying method. The treatment temperature is 35°C, and the treatment time is 60 s.

[0609] In an exemplary embodiment, an alkaline etching solution is used to chemically etch the side of the glass substrate with a mask layer, and after the etching is completed, the glass substrate is cleaned.

[0610] In an exemplary embodiment, the etching solution includes, by mass parts: 60 parts of sodium hydroxide, 20 parts of glycerol, and 40 parts of deionized water. The etching time is 21 min, and the temperature of the etching solution is 120°C.

[0611] In an exemplary embodiment, after chemical etching, the particle depth on the glass substrate is 8.4 - 19.7 μm.

[0612] In an exemplary embodiment, after chemical etching, the maximum particle depth on the glass substrate is 19.7 μm, and the maximum difference in depth dimensions between particles is 11.3 μm.

[0613] In an exemplary embodiment, a solution with a 5%wt sodium hydroxide content is used to remove the photoresist, and the treatment time is 1 minute.

[0614] In an exemplary embodiment, a chromium etchant is used to remove the metal chromium layer, and the treatment time is 5 minutes.

[0615] In an exemplary embodiment, the side of the glass substrate from which the mask layer has been removed is chemically polished, and the polishing is stopped when the transmission haze reaches 22.1%.

[0616] In an exemplary embodiment, the polishing liquid includes, by mass parts: 60 parts of sodium hydroxide and 40 parts of deionized water. The temperature of the polishing liquid is 122 °C, and the polishing time is 160 minutes.

[0617] In an exemplary embodiment, the surface particle depth of the anti-glare glass obtained after polishing is 3.4 - 9.7 μm, the maximum difference in depth dimensions between particles is 6.3 μm, the particle diameter is 114.8 - 145.7 μm, and the maximum difference in diameter dimensions between particles is 30.9 μm.

[0618] In an exemplary embodiment, for the anti-glare glass of the embodiment of the present application, the specular gloss at a 60-degree angle is 26.8 GU; the DOI is 0.6%; the haze is 22.1%; the surface roughness is 1.657 μm; there is no flash point; and there are no moiré patterns.

[0619] Example 28 In an exemplary embodiment, first, a 200-nm-thick chromium metal film layer is deposited on one side of a clean glass by vacuum evaporation, and then a 2-μm-thick photoresist is coated on the surface of the chromium film by roll coating. The chromium metal film layer is deposited using a planar continuous vacuum evaporation machine with a power of 5 KW and a linear speed of 7 mm / s.

[0620] In an exemplary embodiment, then a pattern is preset on the surface of the photoresist by exposure and development, and the pattern distribution rule is as follows: a via array composed of multiple parallel columns of vias.

[0621] In an exemplary embodiment, the diameter of the through-hole is 40 - 50 μm, that is, the difference between the maximum diameter and the minimum diameter of the through-hole is 10 μm, and the diameter value gradient of the through-hole is 1 μm. That is, the through-hole diameters are 40 μm, 41 μm, 42 μm, 43 μm, 44 μm, 45 μm, 46 μm, 47 μm, 48 μm, 49 μm, and 50 μm. The through-hole diameters are normally distributed or approximately normally distributed with 45 μm as the central value, where the aperture ratio of 43 - 47 μm is about 40%, the aperture ratio of 40 - 42 μm is about 30%, and the aperture ratio of 48 - 50 μm is about 30%.

[0622] In an exemplary embodiment, the center distance between adjacent holes on each column of the through-hole array composed of multiple columns of through-holes is 120 μm.

[0623] In an exemplary embodiment, the vertical distance between adjacent columns on the through-hole array is 120 times cos30°, that is, 103.92 μm.

[0624] In an exemplary embodiment, a chromium etching solution is used to transfer the pattern on the photoresist surface to the metal chromium layer, and the corresponding hole pattern array is exposed on the metal chromium layer until the corresponding hole pattern array of the glass substrate is exposed.

[0625] In an exemplary embodiment, the chromium etching solution is composed of ammonium cerium nitrate, glacial acetic acid, and deionized water, where the mass fraction of ammonium cerium nitrate is 16%wt, the mass fraction of glacial acetic acid is 3%wt, the mass fraction of deionized water is 81%wt, and the etching time is 3 min.

[0626] In an exemplary embodiment, an acid-resistant PET protective film is attached to the side of the glass substrate without the mask layer, and a solution with a mass fraction of 3%wt of hydrofluoric acid is used to perform surface activation treatment on the side of the glass substrate with the mask layer by the spraying method. The treatment temperature is 35°C, and the treatment time is 60 s.

[0627] In an exemplary embodiment, a fluorine-containing acidic etching solution is used to chemically etch the side of the glass substrate with the mask layer, and the glass substrate is cleaned after etching.

[0628] In an exemplary embodiment, the etching solution includes, by mass parts: 15 parts of ammonium bifluoride, 5 parts of potassium bifluoride, 30 parts of glycerol, 30 parts of deionized water, the etching time is 25 min, and the etching solution temperature is 22°C.

[0629] In an exemplary embodiment, after chemical etching, the particle depth on the glass substrate is 15.9 - 25.4 μm.

[0630] In an exemplary embodiment, after chemical etching, the maximum particle depth on the glass substrate is 25.4 μm, and the maximum difference in depth dimensions between particles is 9.5 μm.

[0631] In an exemplary embodiment, a solution with a 5%wt sodium hydroxide mass ratio is used to remove the photoresist, and the treatment time is 1 min.

[0632] In an exemplary embodiment, a chromium etchant is used to remove the metal chromium layer, and the treatment time is 5 min.

[0633] In an exemplary embodiment, chemical polishing is performed on the side of the glass substrate from which the mask layer has been removed, and the polishing is stopped when the transmission haze reaches 73.5%.

[0634] In an exemplary embodiment, the polishing liquid includes, by mass parts: 12 parts of hydrofluoric acid, 12 parts of sulfuric acid, and 60 parts of deionized water. The temperature of the polishing liquid is 33 °C, and the polishing time is 59 min.

[0635] In an exemplary embodiment, the surface particle depth of the anti-glare glass obtained after polishing is 6.7 - 15 μm, the maximum difference in depth dimensions between particles is 8.3 μm, the particle diameter is 120.3 - 139.4 μm, and the maximum difference in diameter dimensions between particles is 19.1 μm.

[0636] In an exemplary embodiment, for the anti-glare glass of the embodiment of the present application, the specular gloss at a 60-degree angle: 16.2 GU; DOI: 0.1%; haze: 73.5%; roughness: 2.674 μm; flash point: none; moiré: none.

[0637] Example 29 In an exemplary embodiment, first, a 200-nm-thick chromium metal film layer is deposited on one side of a clean glass by vacuum evaporation, and then a 2-μm-thick photoresist is coated on the surface of the chromium film layer by roll coating.

[0638] In an exemplary embodiment, the chromium metal film layer is deposited using a planar continuous vacuum evaporation machine with a power of 5 KW and a linear speed of 7 mm / s.

[0639] In an exemplary embodiment, then a preset pattern is formed on the surface of the photoresist by exposure and development, and the pattern distribution rule is as follows: a via array composed of multiple parallel columns of vias.

[0640] In an exemplary embodiment, the diameter of the through hole is 40 - 50 μm, that is, the difference between the maximum diameter and the minimum diameter of the through hole is 10 μm. The number of through holes is evenly distributed among 40 μm, 41 μm, 42 μm, 43 μm, 44 μm, 45 μm, 46 μm, 47 μm, 48 μm, 49 μm, and 50 μm. That is, the number of through holes at diameters of 40 μm, 41 μm, 42 μm, 43 μm, 44 μm, 45 μm, 46 μm, 47 μm, 48 μm, 49 μm, and 50 μm is the same, each accounting for one-eleventh of the total number of through holes.

[0641] In an exemplary embodiment, the center distance between adjacent through holes on each column of the through hole array composed of multiple columns of through holes is 120 μm.

[0642] In an exemplary embodiment, the vertical distance between adjacent columns on the through hole array is 120 times cos30°, that is, 103.92 μm.

[0643] In an exemplary embodiment, a chromium etchant is used to transfer the pattern on the photoresist surface to the metal chromium layer, and the corresponding hole pattern array is exposed on the metal chromium layer until the corresponding hole pattern array of the glass substrate is exposed.

[0644] In an exemplary embodiment, the chromium etchant is composed of ammonium cerium nitrate, glacial acetic acid, and deionized water. Among them, the mass fraction of ammonium cerium nitrate is 16%wt, the mass fraction of glacial acetic acid is 3%wt, the mass fraction of deionized water is 81%wt, and the etching time is 3 min.

[0645] In an exemplary embodiment, an acid-resistant PET protective film is attached to the side of the glass substrate without the mask layer, and a solution with a mass fraction of 3%wt of hydrofluoric acid is used to perform surface activation treatment on the side of the glass substrate with the mask layer by the spraying method. The treatment temperature is 35°C, and the treatment time is 60 s.

[0646] In an exemplary embodiment, an alkaline etchant is used to chemically etch the side of the glass substrate with the mask layer, and after the etching is completed, the glass substrate is cleaned.

[0647] In an exemplary embodiment, the etchant includes, by mass parts: 60 parts of sodium hydroxide, 20 parts of glycerol, and 40 parts of deionized water. The etching time is 30 min, and the temperature of the etchant is 123°C.

[0648] In an exemplary embodiment, after chemical etching, the particle depth on the glass substrate is 15 - 30 μm.

[0649] In an exemplary embodiment, after chemical etching, the maximum particle depth on the glass substrate is 30 μm, and the maximum difference in depth dimensions between particles is 15 μm.

[0650] In an exemplary embodiment, a solution with a mass percentage of sodium hydroxide of 5%wt is used to remove the photoresist, and the treatment time is 1 min.

[0651] In an exemplary embodiment, a chromium etchant is used to remove the metal chromium layer, and the treatment time is 5 min.

[0652] In an exemplary embodiment, the glass substrate on the side where the mask layer is removed is chemically polished and stopped when the transmitted haze reaches 22.1%.

[0653] In an exemplary embodiment, the polishing liquid includes, by mass parts: 60 parts of sodium hydroxide, 40 parts of deionized water. The temperature of the polishing liquid is 125°C, and the polishing time is 45 min.

[0654] In an exemplary embodiment, the surface particle depth of the anti-glare glass obtained after polishing is 10 - 25 μm, the maximum difference in depth dimensions between particles is 15 μm, the particle diameter is 120.7 - 133.1 μm, and the maximum difference in diameter dimensions between particles is 12.4 μm.

[0655] In an exemplary embodiment, for the anti-glare glass of the embodiment of the present application, the specular gloss at a 60-degree angle: 13.7 GU; DOI: 0.1%; haze: 84.9%; roughness: 4.571 μm; flash point: none; moiré: none.

[0656] Example 30 Embodiment 30 of the present invention is an anti-glare glass, which is made by using the preparation method of the anti-glare glass in the above embodiment.

[0657] In an exemplary embodiment, in order to further demonstrate the excellent performance of the anti-glare glass of the embodiment of the present application, Table 1 is a performance comparison table of the anti-glare glass of the embodiment of the present application and the anti-glare glass formed by traditional chemical etching on the surface of the glass substrate in the prior art: Table 1:

[0658] 60 - degree Angle specular gloss DOI (distinctness of image) Haze Roughness Flash point (220 PPI) Moiré pattern Comparative Example 1 63 GU 98.90% 18.60% 0.028 μm 0.50 None Comparative Example 2 25.40 GU 39.50% 25.60% 0.227 μm 4.09 None Comparative Example 3 22.2 GU 2.2% 33% 0.316 μm 1.85 Yes Comparative Example 4 65.2 GU 22.3% 5.4% 0.143 μm 2.213 Yes Example 2 70.1 GU 1.6% 5% 0.167 μm None None Example 3 44.9 GU 0.9% 10.7% 0.196 μm None None Example 7 70.3 GU 1.5% 5.1% 0.122 μm None None Example 12 27.7 GU 0.3% 22.1% 0.681 μm None None Example 13 15.1 GU 0.4% 53.1% 0.865 μm None None Example 16 26.1 GU 0.8% 22.4% 0.69 μm None None Example 19 17.6 GU 0.4% 70.5% 1.65 μm None None Example 25 26.6 GU 0.6% 22.9% 1.697 μm None None Example 29 13.7 GU 0.1% 84.9% 4.571 μm None None In an exemplary embodiment, as shown in Table 1, Comparative Example 1 and Comparative Example 2 are both anti-glare glasses formed by traditional chemical etching on the surface of a glass substrate. The process of traditional chemical etching to form anti-glare glass is generally as follows: First, directly spray a chemical etching solution evenly on the glass surface, keep it for a certain time and then clean it, and then perform chemical polishing. Chemical polishing is also to directly spray a polishing solution evenly on the surface of the chemically etched glass and keep it for a certain time. The effect of anti-glare glass treatment is achieved by different compositions of the chemical etching solution and the polishing solution and different reaction times. For example, for the anti-glare glass in Comparative Example 1 in Table 1, the process adopted is as follows: First, directly spray a chemical etching solution evenly on the glass surface, take it out and clean it after 3 minutes; the components of the chemical etching solution include ammonium fluoride, oxalic acid, ammonium sulfate, sodium sulfate, glycerol and water, where the concentration of ammonium fluoride is 16.8 wt%, oxalic acid is 8 wt%, ammonium sulfate is 9 wt%, sodium sulfate is 15.7 wt%, glycerol is 39.3 wt%, and the proportion of water is 11.2 wt%. Then, directly spray a chemical polishing solution evenly on the surface of the chemically etched glass. The anti-glare glass prepared by Comparative Example 1 has a low flash point but poor anti-glare ability.

[0659] For the anti-glare glass in Comparative Example 2 in Table 1, the process adopted is as follows: First, directly spray a chemical etching solution evenly on the glass surface, take it out and clean it after 20 minutes; the components of the chemical etching solution include ammonium fluoride, oxalic acid, ammonium sulfate, sodium sulfate, glycerol and water, where the concentration of ammonium fluoride is 9.8 wt%, oxalic acid is 4.5 wt%, ammonium sulfate is 6.5 wt%, sodium sulfate is 11 wt%, glycerol is 25.2 wt%, and the proportion of water is 43 wt%. Then, directly spray a chemical polishing solution evenly on the surface of the chemically etched glass. Although the anti-glare effect of the anti-glare glass prepared by Comparative Example 2 is improved, the flash point is also very high.

[0660] As can be seen from Table 1, when the flash point is very small in Comparative Example 1, there is a problem of weak anti-glare performance; while when the anti-glare performance is improved in Comparative Example 2, there will be a problem of large flash point, and it cannot, like the anti-glare glass of the embodiment of the present application, have high anti-glare performance while also eliminating the technical requirements of flash point and moiré.

[0661] Comparative Examples 3 and 4 in Table 1 are data obtained from a Chinese patent with publication number CN116675439B. Although they take into account high anti-glare performance and low flash point, the flash point problem still exists and has not been completely solved, and there is also a problem of moiré.

[0662] Those of ordinary skill in the art can understand that the above are only preferred embodiments of the present application and are not intended to limit the present application. Although the present application has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions described in the foregoing embodiments or perform equivalent replacements for some of the technical features. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present application shall be included within the protection scope of the present application.

Claims

1. A method for preparing anti-glare glass, characterized in that, Comprising: An attached mask layer, the mask layer is attached to the surface to be etched of the glass substrate, and the mask layer includes a through-hole array composed of multiple parallel columns of through-holes; each column of the through-hole array includes a plurality of through-holes with different diameter sizes and the same center distance between adjacent through-holes; Chemical etching is performed on the surface of the glass substrate attached with the mask layer; the mask layer is removed, and after the chemical etching is completed, the mask layer is removed to obtain a glass substrate with independent concave particles uniformly distributed on the surface; Chemical polishing is performed on the surface of the glass substrate after the mask layer is removed; the chemical polishing stops when adjacent concave particles are polished to intersect and share the same edge, and the transmission haze of the surface of the glass substrate after the mask layer is removed reaches 5%-85%.

2. The preparation method of the anti-glare glass according to claim 1, characterized in that The diameter size range of the through-holes is 5-50μm, and the center distance between adjacent through-holes in each column of the through-hole array is 20-120μm; there is no overlapping area between any through-holes on the through-hole array, and the distance between adjacent columns is not greater than cos30° times the center distance; the difference between the maximum diameter size and the minimum diameter size of the through-holes on the mask layer is not less than 2μm.

3. The preparation method of the anti-glare glass according to claim 2, characterized in that, The difference between the maximum diameter size and the minimum diameter size of the through-holes on the mask layer is not less than 2μm and not greater than 10μm.

4. The preparation method of the anti-glare glass according to claim 2, wherein The diameter sizes of the through-holes on the mask layer are normally distributed or approximately normally distributed with the average value of a single maximum diameter size and a single minimum diameter size as the central value.

5. The preparation method of the anti-glare glass according to claim 3, characterized in that, The diameter sizes of the through-holes on the mask layer are divided into multiple equal parts with the maximum diameter size and the minimum diameter size as the end values, and the number of through-holes in each equal part accounts for the same proportion of the total number of through-holes on the mask layer.

6. The preparation method of the anti-glare glass according to claim 2, characterized in that, The mask layer at least includes a photosensitive layer; The through-hole array is arranged on the photosensitive layer.

7. The preparation method of the anti-glare glass according to claim 6, wherein, The mask layer further includes a metal layer. When the mask layer includes a metal layer, the metal layer is attached to the glass substrate, and the photosensitive layer is arranged on the side of the metal layer facing away from the glass substrate.

8. The preparation method of the anti-glare glass according to claim 7, wherein When the mask layer includes the metal layer, before the chemical etching step, it further includes: etching the metal layer to etch out the through-hole array on the metal layer.

9. The preparation method of the anti-glare glass according to claim 4 or 5, characterized in that The chemical etching includes etching the glass substrate in the through-holes on the surface attached with the mask layer until the depth size of the particles on the surface of the glass substrate is 0.5-30μm, and the maximum depth size of the particles is 5-30μm.

10. The preparation method of the anti-glare glass according to claim 9, wherein, The chemical polishing further includes polishing the glass substrate until the depth size range of the particles is 0.3-25μm, the difference between the maximum depth size and the minimum depth size of the particles is 0.5-15μm, the diameter size range of the particles is 20-150μm, and the difference between the maximum diameter size and the minimum diameter size of the particles is 3-70μm.

11. The preparation method of the anti-glare glass according to claim 1, characterized in that, The chemical etching uses an acidic etching solution or an alkaline etching solution; the chemical polishing uses an acidic polishing solution or an alkaline polishing solution.

12. The preparation method of the anti-glare glass according to claim 11, wherein, The acidic etching solution includes, by mass parts: 10 parts - 15 parts of ammonium bifluoride, 2 parts - 5 parts of potassium bifluoride, 30 parts - 40 parts of glycerol, and 30 - 40 parts of deionized water.

13. The method for preparing the anti-glare glass according to claim 11, wherein, The alkaline etching solution includes, by mass parts: 45 parts - 60 parts of sodium hydroxide, 20 parts - 30 parts of glycerol, and 40 parts - 55 parts of deionized water.

14. The preparation method of the anti-glare glass according to claim 11, wherein, The acidic polishing solution includes, by mass parts: 8 parts - 12 parts of hydrofluoric acid, 8 parts - 12 parts of sulfuric acid, and 60 parts - 80 parts of deionized water.

15. The preparation method of the anti-glare glass according to claim 11, wherein, The alkaline polishing solution includes, by mass parts: 45 parts - 60 parts of sodium hydroxide, and 40 parts - 55 parts of deionized water.

16. An anti-glare glass, characterized in that, It is made by using the preparation method of the anti-glare glass described in any one of claims 1 - 15.

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