Preparation method of anti-dazzle glass and anti-dazzle glass

Abstract

The invention discloses a preparation method of anti-dazzle glass and the anti-dazzle glass, and the preparation method of the anti-dazzle glass comprises the following steps: attaching a mask layer: attaching the mask layer on a to-be-etched surface of a glass substrate, and arranging a through hole array formed by irregularly arranging a plurality of through holes on the mask layer; etching the surface, attached with the mask layer, of the glass substrate; the mask layer is removed, the mask layer is removed after etching is completed, and the glass substrate with independent concave particles distributed on the surface is obtained; carrying out chemical polishing on one surface of the glass substrate after the mask layer is removed; and stopping polishing when the adjacent concave particles are polished to intersect and share the same edge and the transmission haze of one surface of the polished glass substrate after the mask layer is removed reaches 5-85%.

Description

Technical Field

[0001] The present invention relates to the technical field of anti-glare glass, and particularly to a preparation method of anti-glare glass and the anti-glare glass. Background Art

[0002] Anti-Glare Glass is a kind of functional glass widely used in consumer electronic products. Its anti-glare property can reduce the reflection and scattering of ambient light on the display screen, thereby making the display effect clearer. Therefore, AG anti-glare glass is widely used on the display screens of electronic devices such as vehicle-mounted displays, laptop computers, tablet computers, smart phones, and televisions.

[0003] With the continuous development and popularization of the electronic product market, the demand for anti-glare glass is also increasing. The traditional preparation technology of anti-glare glass usually involves chemically etching or physically sandblasting the surface of the glass substrate and then chemically polishing it. However, the traditional preparation technology of anti-glare glass has many defects, such as high preparation cost, poor environmental protection, and difficulty in balancing the anti-glare effect and sparkle. Especially when the anti-glare performance of the glass is very strong, the sparkle value on the glass surface is very large, which is likely to cause visual fatigue to users. These all limit its wide application.

[0004] Although the Chinese patent with the publication number CN116675439B solves the technical problem that high anti-glare performance and low sparkle cannot be balanced, there are still problems of moiré and rainbow patterns. How to have the low sparkle performance while also solving the problems of moiré and rainbow patterns has become an urgent technical problem in the industry. Summary of the Invention

[0005] In order to solve at least the above technical problems, the purpose of the present invention is to provide a preparation method of anti-glare glass and the anti-glare glass, which have high anti-glare performance and also eliminate sparkle, moiré, and rainbow patterns.

[0006] To achieve the above purpose, the preparation method of anti-glare glass provided by the present application includes:

[0007] Attaching a mask layer, attaching a mask layer on the surface of the glass substrate to be etched, and a through-hole array formed by irregularly arranging a plurality of through-holes is provided on the mask layer;

[0008] Chemical etching, etching the surface of the glass substrate with the mask layer attached;

[0009] Removing the mask layer, removing the mask layer after the chemical etching is completed to obtain a glass substrate with independent concave particles distributed on the surface;

[0010] Chemical polishing, chemically polishing the surface of the glass substrate after removing the mask layer;

[0011] Chemical polishing is stopped when adjacent concave particles are polished until they intersect and share the same edge, and the transmission haze of one surface of the polished glass substrate after removing the mask layer reaches 5%-85%.

[0012] Furthermore, the through-hole array includes a plurality of through-holes with different diameter sizes, and the center distance sizes between any adjacent through-holes are not completely the same;

[0013] The diameter size range of the through-holes is 5-50μm;

[0014] The center distance size between adjacent through-holes is 15-120μm;

[0015] The difference between the maximum diameter size and the minimum diameter size of a single through-hole on the through-hole array is not less than 2μm;

[0016] There is no overlapping part between any through-holes on the through-hole array;

[0017] The difference between the maximum center distance size and the minimum center distance size of adjacent through-holes on the through-hole array is not less than 2μm.

[0018] Furthermore, the difference between the maximum diameter size and the minimum diameter size of a single through-hole on the through-hole array is not less than 2μm and not greater than 10μm.

[0019] Furthermore, the difference between the maximum center distance size and the minimum center distance size of adjacent through-holes on the through-hole array is not less than 2μm and not greater than 20μm.

[0020] Furthermore, the diameter sizes of the through-holes on the through-hole array are normally distributed or approximately normally distributed with the average value of a single maximum diameter size and a single minimum diameter size as the central value.

[0021] Furthermore, the diameter sizes of the through-holes on the through-hole array are divided into multiple equal parts with the maximum diameter size and the minimum diameter size as the end values, and the number of through-holes in each equal part accounts for the same proportion of the number of the through-holes on the mask layer.

[0022] Furthermore, the through-hole array further includes: the diameter sizes between adjacent through-holes are the same.

[0023] Furthermore, the through-hole array further includes: the center distances between adjacent through-holes are the same.

[0024] Furthermore, the center distance sizes between adjacent through-holes on the through-hole array are normally distributed or approximately normally distributed with the average value of a single maximum center distance size and a single minimum center distance size as the central value.

[0025] Further, the center distance dimensions between adjacent through-holes on the through-hole array are divided into multiple equal parts with the maximum center distance dimension and the minimum center distance dimension as the end values, and the number of center distances within each equal part accounts for the same proportion of the total number of center distances on the through-hole array.

[0026] Further, the mask layer at least includes a photosensitive layer;

[0027] The through-hole array is disposed on the photosensitive layer.

[0028] Further, the mask layer further includes a metal layer. When the mask layer includes a metal layer, the metal layer is adhered to the glass substrate, and the photosensitive layer is disposed on the side of the metal layer facing away from the glass substrate;

[0029] When the mask layer includes a metal layer, before the chemical etching step, it further includes:

[0030] Etching the metal layer to etch out a through-hole array on the metal layer.

[0031] Further, the chemical etching includes etching the glass substrate within the through-holes on the side where the mask layer is attached, and etching to a depth dimension of the particles on the surface of the glass substrate of 0.5 - 30 μm, and the maximum depth dimension of the particles is 5 - 30 μm.

[0032] Further, the chemical polishing further includes polishing the glass substrate to a depth dimension range of the particles of 0.3 - 25 μm, the difference between the maximum depth dimension and the minimum depth dimension of the particles is 1 - 15 μm, the diameter dimension range of the particles is 15 - 150 μm, and the difference between the maximum diameter dimension and the minimum diameter dimension of the particles is 3 - 70 μm.

[0033] Further, the chemical etching uses an acidic etching solution or an alkaline etching solution;

[0034] The chemical polishing uses an acidic polishing solution or an alkaline polishing solution.

[0035] Further, the acidic etching solution includes, by mass parts: 10 - 15 parts of ammonium bifluoride, 2 - 5 parts of potassium bifluoride, 30 - 40 parts of glycerol, and 30 - 40 parts of deionized water.

[0036] Further, the alkaline etching solution includes, by mass parts: 45 - 60 parts of sodium hydroxide, 20 - 30 parts of glycerol, and 40 - 55 parts of deionized water.

[0037] Further, the acidic polishing solution includes, by mass parts: 8 - 12 parts of hydrofluoric acid, 8 - 12 parts of sulfuric acid, and 60 - 80 parts of deionized water.

[0038] Further, the alkaline polishing solution includes, by mass parts: 45 - 60 parts of sodium hydroxide and 40 - 55 parts of deionized water.

[0039] To achieve the above object, the anti-glare glass provided by this application includes: being made by using the preparation method of the above anti-glare glass.

[0040] The preparation method of the anti-glare glass and the anti-glare glass according to the embodiments of the present invention greatly reduce the flash point of the anti-glare glass with the same anti-glare performance, and solve the technical problem of the conflict between high anti-glare performance and low flash point; while having high anti-glare performance, it also eliminates flash points, moiré patterns and rainbow patterns, enhancing the market competitiveness of the terminal; when the etching solution and / or polishing solution use alkaline solutions, compared with the existing acidic solutions of hydrofluoric acid type, it is more environmentally friendly, because hydrofluoric acid is volatile and easily causes personal injury to operating workers, and fluoride ions are highly toxic, and the usual treatment methods are also more complex; when using alkaline solutions such as sodium hydroxide, sodium hydroxide has low volatility, and the waste liquid treatment is also simpler. Its waste liquid can be neutralized with acid, and the products are water and precipitates, which is very beneficial to environmental protection.

[0041] Other features and advantages of this application will be described in the following specification, and, in part, will be obvious from the specification, or will be understood by implementing this application. BRIEF DESCRIPTION OF THE DRAWINGS

[0042] The drawings are used to provide a further understanding of this application, and constitute a part of the specification, and together with the embodiments of this application, are used to explain this application, and do not constitute a limitation to this application. In the drawings:

[0043] Figure 1 is a schematic flow chart of the preparation method of the anti-glare glass according to the embodiment of this application;

[0044] Figure 2 is a schematic diagram of a through-hole array according to the embodiment of this application;

[0045] Figure 3 is a three-dimensional view of the anti-glare glass according to the embodiment of this application;

[0046] Figure 4 is a side view of the anti-glare glass according to the embodiment of this application;

[0047] Figure 5 is a top view of the anti-glare glass according to the embodiment of this application;

[0048] Figure 6 is a SEM image of the anti-glare glass according to the embodiment of this application. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0049] The following describes the preferred embodiments of this application with reference to the drawings. It should be understood that the preferred embodiments described herein are only used to illustrate and explain this application, and are not used to limit this application.

[0050] Embodiments of the present application will be described in more detail below with reference to the accompanying drawings. Although some embodiments of the present application are shown in the drawings, it should be understood that the present application can be implemented in various forms and should not be construed as limited to the embodiments set forth herein. On the contrary, these embodiments are provided to more thoroughly and completely understand the present application. It should be understood that the drawings and embodiments of the present application are only for exemplary purposes and are not used to limit the protection scope of the present application.

[0051] As used herein, the term "comprising" and its variations are open-ended, that is, "including but not limited to". The term "based on" is "at least partially based on". The term "one embodiment" means "at least one embodiment"; the term "another embodiment" means "at least one additional embodiment"; the term "some embodiments" means "at least some embodiments". The relevant definitions of other terms will be given in the following description.

[0052] It should be noted that concepts such as "first" and "second" that may be mentioned in the present application are only used to distinguish different devices, components or parts, and are not used to limit the order or interdependence of the functions performed by these devices, components or parts.

[0053] It should be noted that the modification of "one" and "plural" that may be mentioned in the present application is illustrative rather than restrictive. Those skilled in the art should understand that unless otherwise clearly specified in the context, it should be understood as "one or more". "Plural" should be understood as two or more.

[0054] The preparation method of the anti-glare glass of the present application includes:

[0055] Attaching a mask layer, attaching a mask layer on the surface of the glass substrate to be etched, and a via array formed by irregularly arranging a plurality of vias is provided on the mask layer;

[0056] Chemical etching, etching the side of the glass substrate attached with the mask layer;

[0057] Removing the mask layer, removing the mask layer after the chemical etching is completed, and obtaining a glass substrate with independent concave particles distributed on the surface;

[0058] Chemical polishing, chemically polishing the side of the glass substrate after removing the mask layer;

[0059] The chemical polishing stops when adjacent concave particles are polished until they intersect and share the same edge, and the transmission haze of the surface of the glass substrate after removing the mask layer reaches 5%-85%.

[0060] Example 1 Figure 1It is a schematic flowchart of the preparation method of the anti-glare glass according to the embodiments of the present application. The preparation method of the anti-glare glass according to the embodiments of the present invention is used for surface treatment of the glass to perform the anti-glare function, such as the anti-glare glass for vehicles, the anti-glare glass on the surface of mobile terminals, and so on.

[0061] First, in step 101, a mask layer is attached. A mask layer is attached to the surface to be etched of the glass substrate. The mask layer is provided with a via array formed by irregular arrangement of a plurality of vias.

[0062] In an exemplary embodiment, as needed, before attaching the mask layer, it further includes cleaning the surface of the glass substrate and drying the cleaned glass substrate. The surface stains and water stains of the glass substrate are removed during cleaning, and drying is performed until the requirements for attaching the mask layer are met.

[0063] In an exemplary embodiment, when attaching the mask layer to the surface to be etched of the glass substrate, for example, when there is only one surface to be etched, the mask layer is attached to the surface of the glass substrate that needs to be etched. For example, the mask layer is attached to the front surface of the glass substrate, or the mask layer is attached to the back surface of the glass substrate; of course, if necessary, the mask layer can be attached to the front and back surfaces of the glass substrate simultaneously, that is, when both the front and back surfaces of the glass substrate need to be etched.

[0064] In an exemplary embodiment, generally, the anti-glare glass only has technical requirements for the front and / or back surfaces, and the side surfaces of the glass substrate do not affect the optical parameters and performance. Therefore, the surface of the glass substrate referred to in the preparation method of the anti-glare glass according to the embodiments of the present application refers to the front and back surfaces.

[0065] In an exemplary embodiment, the mask layer is provided with a via array formed by irregular arrangement of a plurality of vias; it can be understood that the via array includes a plurality of vias, and the pattern of the arrangement of these vias is irregular. The irregularity can be understood as that the vias do not have a strict row and column arrangement order.

[0066] In an exemplary embodiment, the via array includes a plurality of vias with different diameter sizes, and the center distances between any adjacent vias are not completely the same; it can be understood that the via array is mainly composed of vias with different diameters and different center distances between adjacent vias. According to the needs, there may also be a small part of vias with the same diameter and a small part of adjacent vias with the same center distance; of course, according to the needs, it is also possible that all the via diameters are different and all the center distances between adjacent vias are different.

[0067] In an exemplary embodiment, the diameter sizes of adjacent vias on the via array are different, and the center distances of adjacent vias are different.

[0068] In an exemplary embodiment, as needed, the centers of a large number of continuous through-holes do not lie on the same straight line.

[0069] In an exemplary embodiment, the diameter size range of the through-holes is 5 - 50 μm.

[0070] In an exemplary embodiment, the diameter size range of the through-holes is 5 - 7 μm.

[0071] In an exemplary embodiment, the diameter size range of the through-holes is 7 - 13 μm.

[0072] In an exemplary embodiment, the diameter size range of the through-holes is 40 - 50 μm.

[0073] In an exemplary embodiment, the center distance size range of adjacent through-holes on the through-hole array is 15 - 120 μm.

[0074] In an exemplary embodiment, the center distance size range of adjacent through-holes on the through-hole array is 15 - 20 μm.

[0075] In an exemplary embodiment, the center distance size range of adjacent through-holes on the through-hole array is 18 - 20 μm.

[0076] In an exemplary embodiment, the center distance size range of adjacent through-holes on the through-hole array is 20 - 25 μm.

[0077] In an exemplary embodiment, the center distance size range of adjacent through-holes on the through-hole array is 60 - 70 μm.

[0078] In an exemplary embodiment, the center distance size range of adjacent through-holes on the through-hole array is 100 - 120 μm.

[0079] In an exemplary embodiment, adjacent through-holes do not overlap, are not tangent to each other, and do not intersect, that is, there is no overlapping part.

[0080] In an exemplary embodiment, there is no overlapping part between any through-holes on the through-hole array.

[0081] In an exemplary embodiment, for example, when the center distance of adjacent through-holes is 15 - 120 μm; since adjacent through-holes are not tangent to each other, it can be understood that when the diameter size of the through-hole is 15 μm, the center distance of adjacent through-holes is greater than 15 μm.

[0082] In an exemplary embodiment, the difference between the maximum diameter size and the minimum diameter size of the through-holes on the through-hole array is not less than 2 μm, that is, the difference between the maximum diameter size of a single through-hole and the minimum diameter size of a single through-hole among all the through-holes in the through-hole array on the mask layer is not less than 2 μm.

[0083] In an exemplary embodiment, the difference between the maximum diameter size and the minimum diameter size of the through-holes on the through-hole array is not less than 2 μm and not more than 10 μm.

[0084] In an exemplary embodiment, the diameter sizes of the through-holes on the through-hole array are normally distributed or approximately normally distributed with the average value of the single maximum diameter size and the single minimum diameter size as the central value.

[0085] In an exemplary embodiment, the maximum difference between the diameter sizes of adjacent through-holes on the mask layer is controlled between 0.5 - 1 μm. For example, if the diameter size of one through-hole is 8 μm, the diameter size of the through-hole adjacent to this through-hole ranges from 7 - 9 μm, and can be 7 μm, 7.4 μm, 7.5 μm, 8.5 μm, 8.6 μm, 9 μm, etc.

[0086] In an exemplary embodiment, the diameter sizes of the through-holes on the through-hole array are normally distributed or approximately normally distributed with the average value of the single maximum diameter size and the single minimum diameter size as the central value. Taking the through-hole diameter range on the through-hole array as 7 - 13 μm as an example, the proportion of through-hole diameters of 7 - 8 μm is about 25%, the proportion of through-hole diameters of 9 - 11 μm is about 50%, and the proportion of through-hole diameters of 12 - 13 μm is about 25%.

[0087] In an exemplary embodiment, the diameter sizes of the through-holes on the through-hole array are divided into multiple equal parts with the maximum diameter size and the minimum diameter size as the end values, and the number of through-holes in each equal part accounts for the same proportion of the number of through-holes on the mask layer; for example, the maximum diameter size of the through-holes on the mask layer is 13 μm, and the minimum diameter size is 7 μm. The through-holes are divided into a total of 7 equal parts of 7 μm, 8 μm, 9 μm, 10 μm, 11 μm, 12 μm, and 13 μm according to 7 - 13 μm, and the number of through-holes in each equal part accounts for the same proportion of the number on the mask layer. It can be understood that the number of holes with a diameter of 7 μm is the same as the number of holes with diameters of 8 μm, 9 μm, 10 μm, 11 μm, 12 μm, and 13 μm.

[0088] In an exemplary embodiment, the diameter sizes of adjacent through-holes on the through-hole array are different; of course, according to needs, the diameter sizes of adjacent through-holes can be the same in a small number of cases in the through-hole array.

[0089] In an exemplary embodiment, the difference between the maximum center distance dimension and the minimum center distance dimension of the vias on the via array is not less than 2 μm, that is, the difference between the maximum center distance dimension and the minimum center distance dimension of all adjacent vias in the via array on the mask layer is not less than 2 μm.

[0090] In an exemplary embodiment, the difference between the maximum center distance dimension and the minimum center distance dimension of adjacent vias on the mask layer is not less than 2 μm and not greater than 20 μm.

[0091] In an exemplary embodiment, the center distance dimensions of adjacent vias on the mask layer are normally distributed or approximately normally distributed with the average value of a single maximum center distance dimension and a single minimum center distance dimension as the central value.

[0092] In an exemplary embodiment, the maximum difference between the center distance dimensions of any adjacent vias on the mask layer is controlled between 2 - 20 μm; for example, when the center distance range is 100 - 120 μm, the minimum center distance dimension of any two adjacent vias is 100 μm, and the maximum center distance dimension of any two adjacent vias is 120 μm.

[0093] In an exemplary embodiment, the center distance dimensions of adjacent vias on the mask layer are normally distributed or approximately normally distributed with the average value of a single maximum center distance dimension and a single minimum center distance dimension as the central value; taking the center distance range of adjacent vias on the mask layer as 100 - 120 μm and the center distance value gradient of adjacent vias as 1 μm as an example, that is, the center distances of adjacent vias are 101 μm, 102 μm, 103 μm, 104 μm, 105 μm, 106 μm, 107 μm, 108 μm, 109 μm, 110 μm, 111 μm, 112 μm, 113 μm, 114 μm, 115 μm, 116 μm, 117 μm, 118 μm, 119 μm, and 120 μm, and are normally distributed or approximately normally distributed with 110 μm and 111 μm as the central values, where the proportion of adjacent via center distances of 100 - 105 μm is about 20%, the proportion of adjacent via center distances of 106 - 115 μm is about 60%, and the proportion of adjacent via center distances of 116 - 120 μm is about 20%.

[0094] In an exemplary embodiment, the maximum difference between the center distance dimensions of any adjacent vias on the mask layer is controlled between 2 - 20 μm. For example, when the center distance dimension range of any adjacent vias is 100 - 120 μm, the continuous change gradient of the center distance is 4 μm, and the number of gradients is 6, that is, the center distance dimensions are 100 μm, 104 μm, 108 μm, 112 μm, 116 μm, and 120 μm.

[0095] In an exemplary embodiment, the maximum difference between the center distances of any adjacent through-holes on the mask layer is controlled to be between 2 - 20 μm. For example, the center distance range of any adjacent through-holes is 20 - 22 μm, the continuous change gradient of the center distance is 0.5 μm, and the number of gradients is 5, that is, the center distance dimensions are 20 μm, 20.5 μm, 21 μm, 21.5 μm, and 22 μm respectively.

[0096] In an exemplary embodiment, the specific change gradient and the number of gradients can be adjusted according to actual needs.

[0097] In an exemplary embodiment, the center distances of adjacent through-holes on the through-hole array are divided into multiple equal parts with the maximum center distance dimension and the minimum center distance dimension as the end values, and the number of center distances within each equal part accounts for the same proportion of the number of center distances on the through-hole array; for example, when the center distance dimension is selected as 15 - 20 μm, the center distance is divided into six equal parts: 15 μm, 16 μm, 17 μm, 18 μm, 19 μm, and 20 μm. The number within each equal part is the same, which can be understood as the number of center distances of 15 μm is the same as the numbers of center distances of 16 μm, 17 μm, 18 μm, 19 μm, and 20 μm.

[0098] In an exemplary embodiment, the center distances of adjacent through-holes on the through-hole array are different. Of course, according to needs, the center distances of adjacent through-holes being the same can be a small number of individual cases in the through-hole array.

[0099] In an exemplary embodiment, the mask layer at least includes a photosensitive layer; it can be understood that the mask layer can only have a photosensitive layer according to needs. Of course, when necessary, the mask layer can also include other film layers besides the photosensitive layer.

[0100] In an exemplary embodiment, the mask layer includes other film layers besides the photosensitive layer. For example, the mask layer includes a photosensitive layer and a metal layer.

[0101] In an exemplary embodiment, when the mask layer includes a metal layer, the metal layer is attached to the glass substrate, and the photosensitive layer is disposed on the side of the metal layer facing away from the glass substrate.

[0102] In an exemplary embodiment, the through-hole array is disposed on the photosensitive layer; the through-hole array on the photosensitive layer can be realized by means of exposure and development.

[0103] In an exemplary embodiment, when the mask layer includes a photosensitive layer and a metal layer, the metal layer is, for example, a metal chromium layer or a composite layer containing metal chromium.

[0104] In an exemplary embodiment, when the mask layer includes a photosensitive layer and a metal layer, for example, a metal layer is deposited on the surface to be etched of the glass substrate by vacuum evaporation. In this case, taking the metal layer as a chromium layer as an example and the photosensitive layer as a photoresist layer for explanation.

[0105] In an exemplary embodiment, a chromium layer is deposited on the surface to be etched of the glass substrate by vacuum evaporation, and then a photoresist is spin-coated on the surface of the chromium layer. The thickness of the chromium layer is 200 nm, and the thickness of the photoresist is 2 μm; the chromium layer is deposited on the surface to be etched of the glass substrate by a planar continuous vacuum evaporation machine.

[0106] In an exemplary embodiment, after a via hole array is formed on the photosensitive layer by exposure and development, a chromium etchant is used to etch the via hole array on the photosensitive layer at the corresponding position on the chromium layer to form a corresponding via hole array on the chromium layer; it can be understood that the via hole array on the photosensitive layer is transferred to the chromium layer.

[0107] In an exemplary embodiment, the chromium etchant is composed of ammonium cerium nitrate, glacial acetic acid, and deionized water, where the mass fraction of ammonium cerium nitrate is 16%wt, the mass fraction of glacial acetic acid is 3%wt, and the mass fraction of deionized water is 81%, and the etching time is 3 min.

[0108] Step 102, chemical etching, etching the side of the glass substrate with the mask layer attached.

[0109] In an exemplary embodiment, before chemical etching, it further includes attaching an anti-corrosion layer to the non-etched surface, that is, when the mask layer is attached only on one side of the glass substrate, an anti-corrosion layer is attached to the opposite side of the glass substrate. The anti-corrosion layer is an acid-resistant and / or alkali-resistant corrosion layer; for example, when the etchant is an acid etchant, the anti-corrosion layer is an acid-resistant corrosion layer or a corrosion layer with both acid and alkali resistance. Similarly, when the etchant is an alkaline etchant, the anti-corrosion layer is an alkali-resistant corrosion layer or a corrosion layer with both acid and alkali resistance.

[0110] In an exemplary embodiment, taking the example of performing an anti-glare treatment on the front side of the glass substrate alone in this application, the anti-corrosion layer is attached to the back side of the glass substrate.

[0111] In an exemplary embodiment, after the via hole array on the mask layer is set, and after the anti-corrosion layer is set on the non-etched surface, it further includes surface activation treatment on the etched surface with the mask layer attached.

[0112] In an exemplary embodiment, before the step of surface activation, it further includes: arranging an anti-corrosion layer on the non-etched surface.

[0113] In an exemplary embodiment, the anti-corrosion layer is an acid-resistant and / or alkali-resistant corrosion layer; that is, the specific anti-corrosion layer can be selected according to the activation solution used during surface activation. For example, if an acidic solution is used for surface activation, an acid-resistant or an acid- and alkali-resistant anti-corrosion layer is correspondingly selected.

[0114] In an exemplary embodiment, surface activation can be understood as using a low-concentration hydrofluoric acid solution to remove a passivation layer on the glass surface. For example, a passivation layer with a thickness of 0.1 - 3 μm is removed, so that the independent concave particle profile structure formed during subsequent chemical etching is a "U" shape, and this structure can be formed more quickly.

[0115] In an exemplary embodiment, the low-concentration hydrofluoric acid solution, such as a solution with a hydrofluoric acid mass ratio of 1%wt - 3%wt, and the remaining substances in the low-concentration hydrofluoric acid solution are deionized water.

[0116] In an exemplary embodiment, for surface activation, for example, a solution with a hydrofluoric acid mass ratio of 3%wt is used to perform surface activation treatment on the side of the glass substrate with a mask layer by the spraying method, with a treatment temperature of 35°C and a treatment time of 60 s.

[0117] In an exemplary embodiment, in an exemplary embodiment, chemical etching is performed on the glass substrate, and the chemical etching is to etch the side with the attached mask layer.

[0118] In an exemplary embodiment, since only the area with through holes on the mask layer is exposed on the side with the attached mask layer, the chemical etching is to etch the glass substrate within the through holes.

[0119] In an exemplary embodiment, the etching solution enters the area on the glass substrate where there are through holes in the mask layer, and concave particles with a certain depth are etched.

[0120] In an exemplary embodiment, the etching depth dimension is 0.5 - 30 μm.

[0121] In an exemplary embodiment, the etching depth does not exceed the thickness of the glass substrate, and generally the etching depth does not exceed half of the thickness of the glass substrate.

[0122] In an exemplary embodiment, the etching time for both the acidic etching solution and the alkaline etching solution during etching is 5 min - 30 min.

[0123] In an exemplary embodiment, the acidic etching solution in this application refers to a fluorine-containing acidic etching solution, for example, composed of ammonium bifluoride, potassium bifluoride, glycerol, and deionized water; the alkaline etching solution is, for example, composed of sodium hydroxide, glycerol, and deionized water.

[0124] In an exemplary embodiment, the etching depth can be adjusted by adjusting the concentration of the etching solution and / or the etching time.

[0125] In an exemplary embodiment, the etching solution is an acidic etching solution or an alkaline etching solution.

[0126] In an exemplary embodiment, the acidic etching solution is, for example, a fluorine-containing acidic etching solution.

[0127] In an exemplary embodiment, the acidic etching solution is a mixed solution of ammonium bifluoride, potassium bifluoride, glycerol, and deionized water.

[0128] In an exemplary embodiment, the acidic etching solution comprises, by mass: 10 parts - 15 parts of ammonium bifluoride, 2 parts - 5 parts of potassium bifluoride, 30 - 40 parts of glycerol, and 30 - 40 parts of deionized water.

[0129] In an exemplary embodiment, the temperature of the acidic etching solution is 20°C - 22°C.

[0130] In an exemplary embodiment, the alkaline etching solution is a mixed solution of sodium hydroxide, glycerol, and deionized water.

[0131] In an exemplary embodiment, the alkaline etching solution comprises, by mass: 45 parts - 60 parts of sodium hydroxide, 20 - 30 parts of glycerol, and 40 parts - 55 parts of deionized water.

[0132] In an exemplary embodiment, the temperature of the alkaline etching solution is 115°C - 125°C.

[0133] In an exemplary embodiment, after chemical etching, the particle profile morphology is "U"-shaped, and the particle depth is 0.5 μm - 30 μm.

[0134] In an exemplary embodiment, as needed, during chemical etching, the chemical etching can be stopped when the maximum particle depth reaches 5 - 30 μm.

[0135] Step 103, removing the mask layer. After the chemical etching is completed, the mask layer is removed to obtain a glass substrate with independently distributed concave particles on the surface.

[0136] In an exemplary embodiment, when etching the glass substrate in the through hole and when the etching depth meets the requirements, the chemical etching is stopped, and the mask layer on the surface where the etching is completed is removed.

[0137] In an exemplary embodiment, when the mask layer includes a photosensitive layer and a metal layer, removing the mask layer includes removing the photosensitive layer and the metal chromium layer. Use a solution with a 5%wt sodium hydroxide content to remove the photoresist, with a processing time of 1 minute; then use a chromium etchant to remove the metal chromium layer, with a processing time of 5 minutes.

[0138] In an exemplary embodiment, at this time, pits appear on the surface of the glass substrate on one side of the mask layer being removed within the via hole region. These pits are concave particles, and the positions of the concave particles are consistent with the holes on the mask layer; the non-via hole regions are unetched regions, and at this time, the surface of the glass substrate is distributed with multiple independent concave particles; at this time, the unetched regions are raised platform regions relative to the concave particles.

[0139] Step 104, chemical polishing, chemically polish one side of the glass substrate after removing the mask layer.

[0140] In an exemplary embodiment, after removing the mask layer, chemically polish one side of the glass substrate after removing the mask layer, that is, perform chemical polishing on the entire surface of this side, because the corrosion of the polishing liquid on the glass substrate causes the diameter of the concave particles to gradually expand.

[0141] In an exemplary embodiment, during chemical polishing, the concave particles formed on the basis of chemical etching will gradually have their polished ranges expanded; taking the concave particles as circles as an example for explanation, the radius range of each concave particle region will gradually expand until it is tangent to adjacent circular particles, and then gradually intersect.

[0142] In an exemplary embodiment, since chemical polishing is performed on the entire surface of the glass substrate on this side, the original non-concave particle regions are also within the polishing range during chemical polishing. When the entire surface of the glass substrate on this side is polished and etched, when adjacent circular particles intersect each other and there is no planar protrusion, that is, when adjacent circular particles expand to share the same edge, after chemically polishing adjacent concave particles until they intersect and share the same edge, it further includes continuing to polish one side of the glass substrate after removing the mask layer, and stopping polishing when the transmission haze on the surface of one side of the glass substrate after removing the mask layer reaches 5% - 85%.

[0143] In an exemplary embodiment, chemical polishing further includes polishing the glass substrate to a depth dimension range of the particles of 0.3 - 25 μm, the difference between the maximum depth dimension and the minimum depth dimension of the particles is 1 - 15 μm, the diameter dimension range of the particles is between 15 - 150 μm, and the difference between the maximum diameter dimension and the minimum diameter dimension of the particles is 3 - 70 μm.

[0144] In an exemplary embodiment, the diameter of the particle can be understood as the diameter of the largest circumscribed circle of the particle, since the particle is a polygon, such as a quadrilateral, pentagon, hexagon, heptagon, and so on.

[0145] In an exemplary embodiment, the above chemical polishing is carried out using an acidic polishing solution or an alkaline polishing solution.

[0146] In an exemplary embodiment, the time of chemical polishing is 8 min - 195 min.

[0147] In an exemplary embodiment, the acidic polishing solution is a mixed solution of hydrofluoric acid, sulfuric acid, and deionized water.

[0148] In an exemplary embodiment, the acidic polishing solution includes, by mass: 8 parts - 12 parts of hydrofluoric acid, 8 parts - 12 parts of sulfuric acid, and 60 parts - 80 parts of deionized water.

[0149] In an exemplary embodiment, during chemical polishing, the temperature of the acidic polishing solution is 30°C - 33°C.

[0150] In an exemplary embodiment, the alkaline polishing solution is a mixed solution of sodium hydroxide and deionized water.

[0151] In an exemplary embodiment, the alkaline polishing solution includes, by mass: 45 parts - 60 parts of sodium hydroxide and 40 parts - 55 parts of deionized water.

[0152] In an exemplary embodiment, during chemical polishing, the temperature of the alkaline polishing solution is 115°C - 125°C.

[0153] In an exemplary embodiment, the anti-glare glass obtained by the preparation method of the anti-glare glass of the embodiments of the present application can significantly reduce the flash point value of the anti-glare glass, and can obtain excellent properties such as no flash point, no moiré pattern, no rainbow pattern, smooth touch, and anti-fingerprint while having high anti-glare performance.

[0154] Example 2 In an exemplary embodiment, Example 2 is a specific embodiment of the preparation method of the anti-glare glass of the embodiments of the present application.

[0155] In an exemplary embodiment, in order to make a horizontal comparison of each embodiment, the glass substrate is uniformly selected as Corning 2320. Corning

[0156] In an exemplary embodiment, first, a chromium metal film layer with a thickness of 200 nm is deposited on one side of a clean glass by vacuum evaporation, and then a photoresist layer with a thickness of 2 μm is coated on the surface of the chromium film layer by roll coating.

[0157] In an exemplary embodiment, a planar continuous vacuum evaporation machine is used for the chromium metal film layer, with a power of 5 KW and a linear velocity of 7 mm / s.

[0158] In an exemplary embodiment, then a preset pattern is formed on the surface of the photoresist by exposure and development, and the pattern distribution rules are as follows: a via array formed by irregular arrangement of multiple vias.

[0159] In an exemplary embodiment, the diameter sizes of the vias on the mask layer are divided into multiple equal parts with the maximum diameter size and the minimum diameter size as the end values, and the number of vias in each equal part accounts for the same proportion of the total number of vias on the mask layer.

[0160] In an exemplary embodiment, the diameter of the vias in the via array is 5 - 7 μm, that is, the difference between the maximum diameter size and the minimum diameter size of the vias is 2 μm. The maximum diameter size of the vias on the mask layer is 7 μm, and the minimum diameter size is 5 μm. The vias are divided into 5 equal parts of 5 μm, 5.5 μm, 6 μm, 6.5 μm, and 7 μm. The number of vias in each equal part accounts for the same proportion of the total number of vias on the mask layer. It can be understood that the number of 5-μm vias is the same as the number of 5.5-μm, 6-μm, 6.5-μm, and 7-μm vias, and each accounts for one-fifth of the total number of vias on the mask layer.

[0161] In an exemplary embodiment, the center distance between adjacent holes in the via array is 15 - 20 μm, that is, the difference between the maximum size and the minimum size of the center distance between adjacent vias is 5 μm.

[0162] In an exemplary embodiment, the center distance between adjacent vias on the mask layer is divided into multiple equal parts with the maximum center distance size and the minimum center distance size as the end values, and the number of vias in each equal part accounts for the same proportion of the total number of vias on the mask layer.

[0163] In an exemplary embodiment, the center distance between adjacent holes in the via array is 15 - 20 μm, that is, the maximum center distance size is 20 μm, and the minimum center distance size is 15 μm. The center distance is divided into six equal parts of 15 μm, 16 μm, 17 μm, 18 μm, 19 μm, and 20 μm. The number of vias in each equal part accounts for the same proportion, that is, each accounts for one-sixth.

[0164] In an exemplary embodiment, the center distances between adjacent holes in the through-hole array are counted once for every center distance between two identical through-holes.

[0165] In an exemplary embodiment, a chromium etching solution is used to transfer the surface pattern of the photoresist to the metal chromium layer, and a corresponding hole array pattern is exposed on the metal chromium layer until the glass substrate exposes the corresponding hole array pattern.

[0166] In an exemplary embodiment, the chromium etching solution is composed of ammonium cerium nitrate, glacial acetic acid, and deionized water, wherein the mass proportion of ammonium cerium nitrate is 16%wt, the mass proportion of glacial acetic acid is 3%wt, and the mass proportion of deionized water is 81%wt. The etching time is 3 minutes.

[0167] In an exemplary embodiment, an acid-resistant PET protective film is attached to the side of the glass substrate without the mask layer, and a hydrofluoric acid solution with a mass percentage of 3% by weight is sprayed to activate the surface of the glass substrate with the mask layer at a treatment temperature of 35° C. for 60 seconds.

[0168] In an exemplary embodiment, a fluorine-containing acidic etching solution is used to chemically etch the glass substrate on the side with the mask layer, and the glass substrate is cleaned after the etching is completed.

[0169] In an exemplary embodiment, the etching solution includes, by weight, 10 parts of ammonium bifluoride, 2 parts of potassium bifluoride, 40 parts of glycerol, and 40 parts of deionized water. The etching time is 5 minutes, and the etching solution temperature is 20°C.

[0170] In an exemplary embodiment, after chemical etching, the depth of the particles on the glass substrate is 0.5-5 μm, the maximum particle depth is 5 μm, and the maximum difference in depth size between particles is 4.5 μm.

[0171] In an exemplary embodiment, a solution containing 5% by weight of sodium hydroxide is used to remove the photoresist, and the treatment time is 1 minute.

[0172] In an exemplary embodiment, a chromium etching solution is used to remove the metal chromium layer, and the processing time is 5 minutes.

[0173] In an exemplary embodiment, the glass substrate on the side where the mask layer is removed is chemically polished, and the polishing is stopped when the transmission haze reaches 5%.

[0174] In an exemplary embodiment, the polishing liquid includes, by weight, 12 parts of hydrofluoric acid, 12 parts of sulfuric acid, and 60 parts of deionized water. The temperature of the polishing liquid is 30° C., and the polishing time is 35 minutes.

[0175] In an exemplary embodiment, the surface particle depth of the anti-glare glass obtained after polishing is 0.3 - 1.3 μm, the maximum difference in the depth dimension between particles is 1 μm, the particle diameter is 15 - 30.9 μm, and the maximum difference in the diameter dimension between particles is 15.9 μm.

[0176] In an exemplary embodiment, for the anti-glare glass of the embodiment of the present application, the specular gloss at a 60-degree angle: 70.1 GU; DOI: 1.6%; haze: 5%; surface roughness: 0.107 μm; flash point: none; moiré pattern: none; rainbow pattern: none.

[0177] In an exemplary embodiment, as needed, the mask layer may only include a photosensitive layer, that is, only a photoresist is provided without using a metal chromium layer; it can be understood that when the metal chromium layer is not provided, there is naturally no need to use a chromium etchant to etch the metal chromium layer.

[0178] In an exemplary embodiment, as needed, after the chemical etching step is completed and before chemical polishing, the glass substrate may also be cleaned.

[0179] Example 3 In an exemplary embodiment, first, a 200-nm-thick chromium metal film layer is deposited on one side of a clean glass by vacuum evaporation, and then a 2-μm-thick photoresist is coated on the surface of the chromium film layer by roll coating.

[0180] In an exemplary embodiment, the chromium metal film layer is deposited by a planar continuous vacuum evaporation machine with a power of 5 KW and a linear speed of 7 mm / s.

[0181] In an exemplary embodiment, then a preset pattern is formed on the surface of the photoresist by exposure and development, and the pattern distribution rules are as follows: a through-hole array formed by irregular arrangement of a plurality of through-holes.

[0182] In an exemplary embodiment, the diameter of the through-holes in the through-hole array is 5 - 7 μm, that is, the difference between the maximum diameter dimension and the minimum diameter dimension of the through-holes is 2 μm. The maximum diameter dimension of the through-holes on the mask layer is 7 μm, and the minimum diameter dimension is 5 μm. The through-holes are divided into a total of 5 equal parts of 5 μm, 5.5 μm, 6 μm, 6.5 μm, and 7 μm according to 5 - 7 μm. The proportion of the number of through-holes in each equal part in the number of through-holes on the mask layer is the same. It can be understood that the number of 5-μm through-holes is the same as the number of 5.5-μm, 6-μm, 6.5-μm, and 7-μm through-holes, and each accounts for one-fifth of the total number of through-holes on the mask layer.

[0183] In an exemplary embodiment, the center distance between adjacent holes in the through-hole array is 15 - 20 μm, that is, the difference between the maximum dimension and the minimum dimension of the center distance between adjacent through-holes is 5 μm.

[0184] In an exemplary embodiment, the center distance between adjacent through-holes on the through-hole array is 15 - 20 μm, that is, the maximum center distance dimension is 20 μm, and the minimum center distance dimension is 15 μm. The center distances are 15 μm, 16 μm, 17 μm, 18 μm, 19 μm, and 20 μm. It can be understood that the value gradient of the center distance is 1 μm, and it is normally distributed or approximately normally distributed with 17 - 18 μm as the central value, where the proportion of 15 - 16 μm is 30%, the proportion of 17 - 18 μm is 40%, and the proportion of 19 - 20 μm is 30%.

[0185] In an exemplary embodiment, a chromium etching solution is used to transfer the pattern on the photoresist surface to the metal chromium layer, and the corresponding hole pattern array is exposed on the metal chromium layer until the corresponding hole pattern array on the glass substrate is exposed.

[0186] In an exemplary embodiment, the chromium etching solution is composed of ammonium cerium nitrate, glacial acetic acid, and deionized water, where the mass proportion of ammonium cerium nitrate is 16%wt, the mass proportion of glacial acetic acid is 3%wt, and the mass proportion of deionized water is 81%wt. The etching time is 3 min.

[0187] In an exemplary embodiment, an acid-resistant PET protective film is attached to the side of the glass substrate without the mask layer, and a solution with a mass proportion of 3%wt of hydrofluoric acid is used to perform surface activation treatment on the side of the glass substrate with the mask layer by the spraying method. The treatment temperature is 35°C, and the treatment time is 60 s.

[0188] In an exemplary embodiment, a fluorine-containing acidic etching solution is used to chemically etch the side of the glass substrate with the mask layer, and after the etching is completed, the glass substrate is cleaned.

[0189] In an exemplary embodiment, the etching solution includes, by mass parts: 12 parts of ammonium bifluoride, 3 parts of potassium bifluoride, 38 parts of glycerol, and 38 parts of deionized water. The etching time is 5 min, and the temperature of the etching solution is 21°C.

[0190] In an exemplary embodiment, after chemical etching, the particle depth on the glass substrate is 4.1 - 7.3 μm, the maximum particle depth is 7.3 μm, and the maximum difference in depth dimensions between particles is 3.2 μm.

[0191] In an exemplary embodiment, a solution with a mass proportion of 5%wt of sodium hydroxide is used to remove the photoresist, and the treatment time is 1 min.

[0192] In an exemplary embodiment, a chromium etching solution is used to remove the metal chromium layer, and the treatment time is 5 min.

[0193] In an exemplary embodiment, the glass substrate on the side where the mask layer is removed is chemically polished and stopped when the transmission haze reaches 10.3%.

[0194] In an exemplary embodiment, the polishing liquid comprises, by mass parts: 10 parts of hydrofluoric acid, 10 parts of sulfuric acid, 68 parts of deionized water. The temperature of the polishing liquid is 35 °C and the polishing time is 30 min.

[0195] In an exemplary embodiment, the surface particle depth of the anti-glare glass obtained after polishing is 1.3 - 2.2 μm, the maximum difference in depth dimensions between particles is 0.9 μm, the particle diameter is 15.2 - 26.6 μm, and the maximum difference in diameter dimensions between particles is 11.4 μm.

[0196] In an exemplary embodiment, for the anti-glare glass of the embodiment of the present application, the specular gloss at a 60-degree angle: 45.2 GU; DOI: 0.9%; haze: 10.3%; roughness: 0.156 μm; flash point: none; moiré pattern: none; rainbow pattern: none.

[0197] In an exemplary embodiment, as needed, the mask layer may only include a photosensitive layer, that is, only a photoresist is provided without using a metal chromium layer; it can be understood that when the metal chromium layer is not provided, there is naturally no need to use a chromium etching solution to etch the metal chromium layer.

[0198] In an exemplary embodiment, as needed, after the chemical etching step is completed and before chemical polishing, the glass substrate may also be cleaned.

[0199] Example 4 In an exemplary embodiment, first, a 200-nm-thick chromium metal film layer is deposited on one side of a clean glass by vacuum evaporation, and then a 2-μm-thick photoresist is coated on the surface of the chromium film layer by roll coating.

[0200] In an exemplary embodiment, the chromium metal film layer is deposited by a planar continuous vacuum evaporation machine with a power of 5 KW and a linear speed of 7 mm / s.

[0201] In an exemplary embodiment, then a preset pattern is formed on the surface of the photoresist by exposure and development, and the pattern distribution rules are as follows: a via array formed by irregularly arranged multiple vias.

[0202] In an exemplary embodiment, the diameter of the vias in the via array is 5 - 7 μm, and the diameter value gradient of the vias is 0.5 μm (i.e., 5 μm, 5.5 μm, 6 μm, 6.5 μm, 7 μm), which is normally distributed or approximately normally distributed with a central value of 6 μm. Among them, the proportion of the 6 - μm aperture is about 50%, the proportion of the 5 - μm aperture is about 10%, the proportion of the 5.5 - μm aperture is about 15%, the proportion of the 6.5 - μm aperture is about 15%, and the proportion of the 7 - μm aperture is about 10%.

[0203] In an exemplary embodiment, the center - to - center distance of adjacent holes on the via array is 18 - 25 μm.

[0204] In an exemplary embodiment, the center - to - center distance of adjacent holes on the via array is 18 - 25 μm, that is, the maximum center - to - center distance dimension is 25 μm, and the minimum center - to - center distance dimension is 18 μm. That is, the center - to - center distance is divided into eight equal parts: 18 μm, 19 μm, 20 μm, 21 μm, 22 μm, 23 μm, 24 μm, and 25 μm. The quantity proportion within each equal part is the same, that is, each accounts for one - eighth.

[0205] In an exemplary embodiment, a chromium etchant is used to transfer the photoresist surface pattern onto the metal chromium layer, and the corresponding hole - type array pattern is exposed on the metal chromium layer until the corresponding hole - type array pattern of the glass substrate is exposed.

[0206] In an exemplary embodiment, the chromium etchant is composed of ammonium cerium nitrate, glacial acetic acid, and deionized water. Among them, the mass proportion of ammonium cerium nitrate is 16% wt, the mass proportion of glacial acetic acid is 3% wt, and the mass proportion of deionized water is 81% wt. The etching time is 3 min.

[0207] In an exemplary embodiment, an acid - resistant PET protective film is attached to the side of the glass substrate without the mask layer, and a solution with a mass proportion of 3% wt of hydrofluoric acid is used to perform surface activation treatment on the side of the glass substrate with the mask layer by the spraying method. The treatment temperature is 35 °C, and the treatment time is 60 s.

[0208] In an exemplary embodiment, a solution with a mass proportion of 5% wt of sodium hydroxide is used to remove the photoresist, and the treatment time is 1 min.

[0209] In an exemplary embodiment, an etchant is used to chemically etch the side of the glass substrate with the mask layer, and after etching, the glass substrate is cleaned.

[0210] In an exemplary embodiment, the etchant includes, by mass parts: 14 parts of ammonium bifluoride, 4 parts of potassium bifluoride, 33 parts of glycerol, and 33 parts of deionized water. The etching time is 6.5 min, and the etching temperature is 22 °C.

[0211] In an exemplary embodiment, the depth of particles on the glass substrate is 5.3 - 8.2 μm, the maximum particle depth is 8.2 μm, and the maximum difference in depth dimensions between particles is 2.9 μm.

[0212] In an exemplary embodiment, a chromium etching solution is used to remove the metal chromium layer, and the treatment time is 5 min.

[0213] In an exemplary embodiment, an alkaline polishing solution is used to chemically polish the side of the glass substrate from which the mask layer has been removed, and the polishing is stopped when the transmission haze reaches 22.1%.

[0214] In an exemplary embodiment, the polishing solution includes, by mass: 10 parts of hydrofluoric acid, 8 parts of sulfuric acid, 73 parts of deionized water, the temperature is 33 °C, and the polishing time is 21 min.

[0215] In an exemplary embodiment, the particle depth is 1.7 - 3.6 μm, and the maximum difference in depth dimensions between particles is 1.9 μm; the particle diameter is 17.5 - 29.5 μm, and the maximum difference in particle diameter dimensions is 12 μm.

[0216] In an exemplary embodiment, for the anti-glare glass of the embodiment of the present application, the specular gloss at a 60-degree angle: 26.9 GU; DOI: 0.6%; haze: 22.1%; surface roughness: 0.3029 μm; flash point: none; moiré pattern: none; rainbow pattern: none.

[0217] In an exemplary embodiment, according to requirements, the mask layer may only include a photosensitive layer, that is, only a photoresist is provided without using a metal chromium layer; it can be understood that when the metal chromium layer is not provided, there is naturally no need to use a chromium etching solution to etch the metal chromium layer.

[0218] In an exemplary embodiment, according to requirements, after the chemical etching step is completed and before chemical polishing, the glass substrate can also be cleaned.

[0219] Example 5 In an exemplary embodiment, first, a chromium metal film layer with a thickness of 200 nm is deposited on one side of a clean glass by vacuum evaporation, and then a photoresist layer with a thickness of 2 μm is coated on the surface of the chromium film layer by roll coating.

[0220] In an exemplary embodiment, the chromium metal film layer is deposited by a planar continuous vacuum evaporation machine with a power of 5 KW and a linear speed of 7 mm / s.

[0221] In an exemplary embodiment, then a preset pattern is formed on the surface of the photoresist by exposure and development, and the pattern distribution rule is as follows: a via array formed by irregular arrangement of multiple vias.

[0222] In an exemplary embodiment, the diameter of the vias in the via array is 5-7 μm, that is, the difference between the maximum diameter size and the minimum diameter size of the vias is 2 μm. The maximum diameter size of the vias on the mask layer is 7 μm, and the minimum diameter size is 5 μm. The vias are divided into a total of 5 equal parts of 5 μm, 5.5 μm, 6 μm, 6.5 μm, and 7 μm according to 5-7 μm. The proportion of the number of vias in each equal part on the mask layer is the same. It can be understood that the number of 5-μm vias is the same as the number of 5.5-μm, 6-μm, 6.5-μm, and 7-μm vias, and each accounts for one-fifth of the total number of vias on the mask layer.

[0223] In an exemplary embodiment, the center distance between adjacent holes on the via array is 20-25 μm, that is, the difference between the maximum size and the minimum size of the center distance between adjacent vias is 5 μm.

[0224] In an exemplary embodiment, the center distance between adjacent holes on the via array is 20-25 μm, that is, the maximum center distance size is 25 μm, and the minimum center distance size is 20 μm. That is, the center distance is divided into six equal parts of 20 μm, 21 μm, 22 μm, 23 μm, 24 μm, and 25 μm. The proportion of the number in each equal part is the same, that is, each accounts for one-sixth.

[0225] In an exemplary embodiment, a chromium etching solution is used to transfer the surface pattern of the photoresist onto the metal chromium layer, and the corresponding hole pattern array is exposed on the metal chromium layer until the corresponding hole pattern array of the glass substrate is exposed.

[0226] In an exemplary embodiment, the chromium etching solution is composed of ammonium cerium nitrate, glacial acetic acid, and deionized water. Among them, the mass proportion of ammonium cerium nitrate is 16%wt, the mass proportion of glacial acetic acid is 3%wt, and the mass proportion of deionized water is 81%wt. The etching time is 3 min.

[0227] In an exemplary embodiment, an acid-resistant PET protective film is attached to the side of the glass substrate without the mask layer. A solution with a mass proportion of 3%wt of hydrofluoric acid is used to perform surface activation treatment on the side of the glass substrate with the mask layer by the spraying method. The treatment temperature is 35°C, and the treatment time is 60 s.

[0228] In an exemplary embodiment, a solution with a mass proportion of 5%wt of sodium hydroxide is used to remove the photoresist, and the treatment time is 1 min.

[0229] In an exemplary embodiment, an etching solution is used to chemically etch the side of the glass substrate with the mask layer, and the glass substrate is cleaned after etching is completed.

[0230] In an exemplary embodiment, the etching solution includes, by mass parts: 15 parts of ammonium bifluoride, 5 parts of potassium bifluoride, 30 parts of glycerol, 30 parts of deionized water, the etching time is 5 min, and the etching temperature is 21 °C.

[0231] In an exemplary embodiment, the depth of the particles on the glass substrate is 5.9 - 8.7 μm, the maximum particle depth is 8.7 μm, and the maximum difference in the depth dimension between particles is 2.8 μm.

[0232] In an exemplary embodiment, a chromium etching solution is used to remove the metal chromium layer, and the treatment time is 5 min.

[0233] In an exemplary embodiment, an alkaline polishing solution is used to chemically polish the side of the glass substrate from which the mask layer has been removed, and the polishing is stopped when the transmission haze reaches 44.5%.

[0234] In an exemplary embodiment, the polishing solution includes, by mass parts: 8 parts of hydrofluoric acid, 8 parts of sulfuric acid, 80 parts of deionized water, the temperature is 30 °C, and the polishing time is 12 min.

[0235] In an exemplary embodiment, the particle depth is 2.7 - 5.1 μm, and the maximum difference in the depth dimension between particles is 2.4 μm; the particle diameter is 19.7 - 28.4 μm, and the maximum difference in the particle diameter dimension is 8.7 μm.

[0236] In an exemplary embodiment, for the anti-glare glass of the embodiment of the present application, the specular gloss at a 60-degree angle: 16 GU; DOI: 0.3%; haze: 44.5%; roughness: 0.413 μm; flash point: none; moiré pattern: none; rainbow pattern: none.

[0237] In an exemplary embodiment, as needed, the mask layer may only include a photosensitive layer, that is, only a photoresist is provided without using a metal chromium layer; it can be understood that when the metal chromium layer is not provided, naturally there is no need to use a chromium etching solution to etch the metal chromium layer.

[0238] In an exemplary embodiment, as needed, after the chemical etching step is completed and before the chemical polishing, the glass substrate can also be cleaned.

[0239] Example 6 In an exemplary embodiment, first, a 200-nm-thick chromium metal film layer is deposited on one side of a clean glass by vacuum evaporation, and then a 2-μm-thick photoresist is coated on the surface of the chromium film layer by roll coating.

[0240] In an exemplary embodiment, the chromium metal film layer is deposited by a planar continuous vacuum evaporation machine with a power of 5 KW and a linear speed of 7 mm / s.

[0241] In an exemplary embodiment, a pattern is preset on the surface of the photoresist by exposure and development. The pattern distribution rules are as follows: a via array formed by irregular arrangement of a plurality of vias.

[0242] In an exemplary embodiment, the diameter of the vias in the via array is 5 - 7 μm, that is, the difference between the maximum diameter size and the minimum diameter size of the vias is 2 μm. The maximum diameter size of the vias on the mask layer is 7 μm, and the minimum diameter size is 5 μm. The vias are divided into a total of 5 equal parts of 5 μm, 5.5 μm, 6 μm, 6.5 μm, and 7 μm. The proportion of the number of vias in each equal part on the mask layer is the same. It can be understood that the number of 5-μm vias is the same as the number of 5.5-μm, 6-μm, 6.5-μm, and 7-μm vias, and each accounts for one-fifth of the total number of vias on the mask layer.

[0243] In an exemplary embodiment, the center distance between adjacent holes in the via array is 25 - 30 μm, that is, the difference between the maximum size and the minimum size of the center distance between adjacent vias is 5 μm.

[0244] In an exemplary embodiment, the center distance between adjacent holes in the via array is 25 - 30μm, that is, the maximum center distance size is 30 μm, and the minimum center distance size is 25 μm. The center distance is divided into a total of six equal parts of 25 μm, 26 μm, 27 μm, 28 μm, 29 μm, and 30 μm. The proportion of the number in each equal part is the same, that is, each accounts for one-sixth.

[0245] In an exemplary embodiment, a chromium etchant is used to transfer the pattern on the surface of the photoresist to the metal chromium layer, and the corresponding hole pattern array is exposed on the metal chromium layer until the corresponding hole pattern array of the glass substrate is exposed.

[0246] In an exemplary embodiment, the chromium etchant is composed of ammonium cerium nitrate, glacial acetic acid, and deionized water. The mass proportion of ammonium cerium nitrate is 16%wt, the mass proportion of glacial acetic acid is 3%wt, and the mass proportion of deionized water is 81%wt. The etching time is 3 min.

[0247] In an exemplary embodiment, an acid-resistant PET protective film is attached to the side of the glass substrate without the mask layer. A solution with a mass proportion of 3%wt of hydrofluoric acid is used to perform surface activation treatment on the side of the glass substrate with the mask layer by the spraying method. The treatment temperature is 35 °C, and the treatment time is 60 s.

[0248] In an exemplary embodiment, a solution with a mass proportion of 5%wt of sodium hydroxide is used to remove the photoresist, and the treatment time is 1 min.

[0249] In an exemplary embodiment, the glass substrate with the mask layer on one side is chemically etched using an alkaline etching solution, and after the etching is completed, the glass substrate is cleaned.

[0250] In an exemplary embodiment, the etching solution includes, by mass parts: 45 parts of sodium hydroxide, 30 parts of glycerol, 55 parts of deionized water, an etching time of 10 min, and an etching temperature of 125 °C.

[0251] In an exemplary embodiment, the particle depth on the glass substrate is 0.6 - 5.1 μm, the maximum particle depth is 5.1 μm, and the maximum difference in depth dimensions between particles is 4.5 μm.

[0252] In an exemplary embodiment, a chromium etching solution is used to remove the metal chromium layer, and the treatment time is 5 min.

[0253] In an exemplary embodiment, the glass substrate with the mask layer removed on one side is chemically polished using an alkaline polishing solution, and the polishing is stopped when the transmission haze reaches 5.3%.

[0254] In an exemplary embodiment, the polishing solution includes, by mass parts: 45 parts of sodium hydroxide and 55 parts of deionized water, a temperature of 125 °C, and a polishing time of 36 min.

[0255] In an exemplary embodiment, the particle depth is 0.4 - 1.6 μm, and the maximum difference in depth dimensions between particles is 1.2 μm; the particle diameter is 24.3 - 35.4 μm, and the maximum difference in particle diameter dimensions is 11.1 μm.

[0256] In an exemplary embodiment, for the anti-glare glass of the embodiment of the present application, the specular gloss at a 60-degree angle is 68.9 GU; the DOI is 1.5%; the haze is 5.3%; the surface roughness is 0.148 μm; there is no flash point; there is no moiré; there is no rainbow pattern.

[0257] [[ID=2,4]]In an exemplary embodiment, according to requirements, the mask layer may only include a photosensitive layer, that is, only a photoresist is provided without using a metal chromium layer; it can be understood that when the metal chromium layer is not provided, there is naturally no need to use a chromium etching solution to etch the metal chromium layer.

[0258] In an exemplary embodiment, according to requirements, after the chemical etching step is completed and before the chemical polishing, the glass substrate can also be cleaned.

[0259] Example 7 In an exemplary embodiment, first, a chromium metal film layer with a thickness of 200 nm is deposited on one side of a clean glass by vacuum evaporation, and then a photoresist layer with a thickness of 2 μm is coated on the surface of the chromium film layer by roll coating.

[0260] In an exemplary embodiment, a planar continuous vacuum evaporation coater is used for the chromium metal film layer, with a power of 5 KW and a linear velocity of 7 mm / s.

[0261] In an exemplary embodiment, then a pattern is preset on the photoresist surface by means of exposure and development, and the pattern distribution rules are as follows: a via array formed by irregular arrangement of a plurality of vias.

[0262] In an exemplary embodiment, the diameter of the vias in the via array is 5 - 7 μm, that is, the difference between the maximum diameter size and the minimum diameter size of the vias is 2 μm. The maximum diameter size of the vias on the mask layer is 7 μm, and the minimum diameter size is 5 μm. The vias are divided into a total of 5 equal parts of 5 μm, 5.5 μm, 6 μm, 6.5 μm, and 7 μm according to 5 - 7 μm. The proportion of the number of vias in each equal part on the mask layer is the same. It can be understood that the number of 5 - μm vias is the same as the number of vias of 5.5 μm, 6 μm, 6.5 μm, and 7 μm, and each accounts for one - fifth of the total number of vias on the mask layer.

[0263] In an exemplary embodiment, the center - to - center distance between adjacent holes in the via array is 20 - 23 μm, that is, the difference between the maximum size and the minimum size of the center - to - center distance between adjacent vias is 3 μm.

[0264] In an exemplary embodiment, the center - to - center distance between adjacent vias in the via array is 20 - 23 μm, that is, the maximum center - to - center distance size is 23 μm, and the minimum center - to - center distance size is 20 μm. The center - to - center distance is divided into 20 μm, 20.5 μm, 21 μm, 21.5 μm, 22 μm, 22.5 μm, and 23 μm. It can be understood that the value gradient of the center - to - center distance is 1 μm, and it is normally distributed or approximately normally distributed with 21 - 22 μm as the central value, where the proportion of 20 - 20.5 μm is 25%, the proportion of 21 - 22 μm is 50%, and the proportion of 22.5 - 23 μm is 25%.

[0265] In an exemplary embodiment, a chromium etchant is used to transfer the pattern on the photoresist surface to the chromium metal layer, and the corresponding hole - type array pattern is exposed on the chromium metal layer until the corresponding hole - type array pattern of the glass substrate is exposed.

[0266] In an exemplary embodiment, the chromium etchant is composed of ammonium cerium nitrate, glacial acetic acid, and deionized water, where the mass proportion of ammonium cerium nitrate is 16% wt, the mass proportion of glacial acetic acid is 3% wt, and the mass proportion of deionized water is 81% wt. The etching time is 3 min.< /

[0267]

[0267] In an exemplary embodiment, an acid-resistant PET protective film is attached to the side of the glass substrate without the mask layer, and a hydrofluoric acid solution with a mass percentage of 3% by weight is sprayed to activate the surface of the glass substrate with the mask layer at a treatment temperature of 35° C. for 60 seconds.

[0268] In an exemplary embodiment, a solution containing 5% by weight of sodium hydroxide is used to remove the photoresist, and the treatment time is 1 minute.

[0269] In an exemplary embodiment, an alkaline etching solution is used to chemically etch the glass substrate on the side with the mask layer, and the glass substrate is cleaned after the etching is completed.

[0270] In an exemplary embodiment, the alkaline etching solution is a solution containing sodium hydroxide.

[0271] In an exemplary embodiment, the etching solution includes, by weight, 50 parts of sodium hydroxide, 25 parts of glycerol, and 50 parts of deionized water. The etching time is 8.5 minutes and the etching temperature is 120°C.

[0272] In an exemplary embodiment, the depth of the particles on the glass substrate is 4.6-7.4 μm, the maximum particle depth is 7.4 μm, and the maximum difference in depth between particles is 2.8 μm.

[0273] In an exemplary embodiment, a chromium etching solution is used to remove the metal chromium layer, and the processing time is 5 minutes.

[0274] In an exemplary embodiment, the glass substrate from which the mask layer is removed is chemically polished using an alkaline polishing solution, and the polishing is stopped when the transmission haze reaches 10.3%.

[0275] In an exemplary embodiment, the polishing liquid includes, by weight, 50 parts of sodium hydroxide and 50 parts of deionized water, at a temperature of 120° C., and a polishing time of 30 minutes.

[0276] In an exemplary embodiment, the particle depth is 1.7-3.2 μm, and the maximum difference in depth between particles is 1.5 μm; the particle diameter is 15-32.3 μm, and the maximum difference in particle diameter is 17.3 μm.

[0277] In an exemplary embodiment, the anti-glare glass of the embodiment of the present application has a 60-degree mirror glossiness of 45.2 GU, distinctness of image of 0.6%, haze of 10.3%, roughness of 0.167 μm, flash point of none, moiré of none, and rainbow pattern of none.

[0278] In an exemplary embodiment, if necessary, the mask layer may only include a photosensitive layer, that is, only a photoresist is provided without using a metal chromium layer. It can be understood that when the metal chromium layer is not provided, there is naturally no need to use a chromium etching solution to etch the metal chromium layer.

[0279] In an exemplary embodiment, if necessary, after the chemical etching step is completed and before chemical polishing, cleaning of the glass substrate may also be included.

[0280] Example 8 In an exemplary embodiment, first, a 200-nm-thick chromium metal film layer is deposited on one side of a clean glass by vacuum evaporation, and then a 2-μm-thick photoresist is coated on the surface of the chromium film layer by roll coating.

[0281] In an exemplary embodiment, the chromium metal film layer is deposited by a planar continuous vacuum evaporation machine with a power of 5 KW and a linear velocity of 7 mm / s.

[0282] In an exemplary embodiment, then a preset pattern is formed on the surface of the photoresist by exposure and development. The pattern distribution rules are as follows: a via array formed by irregular arrangement of multiple vias.

[0283] In an exemplary embodiment, the diameter of the vias in the via array is 5 - 7 μm, that is, the difference between the maximum diameter size and the minimum diameter size of the vias is 2 μm. The maximum diameter size of the vias on the mask layer is 7 μm, and the minimum diameter size is 5 μm. The vias are divided into a total of 5 equal parts of 5 μm, 5.5 μm, 6 μm, 6.5 μm, and 7 μm. The number of vias in each equal part accounts for the same proportion on the mask layer. It can be understood that the number of 5-μm vias is the same as the number of 5.5-μm, 6-μm, 6.5-μm, and 7-μm vias, and each accounts for one-fifth of the total number of vias on the mask layer.

[0284] In an exemplary embodiment, the center distance between adjacent holes in the via array is 20 - 24 μm, that is, the difference between the maximum center distance size and the minimum center distance size of adjacent vias is 4 μm.

[0285] In an exemplary embodiment, the center distance between adjacent holes in the via array is 20 - 24 μm, that is, the maximum center distance size is 24 μm, and the minimum center distance size is 20 μm. That is, the center distance is divided into 5 equal parts of 20 μm, 21 μm, 22 μm, 23 μm, and 24 μm. The number in each equal part accounts for the same proportion, that is, each accounts for one-fifth.

[0286] In an exemplary embodiment, a chromium etching solution is used to transfer the surface pattern of the photoresist to the metal chromium layer, and a corresponding hole array pattern is exposed on the metal chromium layer until the glass substrate exposes the corresponding hole array pattern.

[0287] In an exemplary embodiment, the chromium etching solution is composed of ammonium cerium nitrate, glacial acetic acid, and deionized water, wherein the mass proportion of ammonium cerium nitrate is 16%wt, the mass proportion of glacial acetic acid is 3%wt, and the mass proportion of deionized water is 81%wt. The etching time is 3 minutes.

[0288] In an exemplary embodiment, an acid-resistant PET protective film is attached to the side of the glass substrate without the mask layer, and a hydrofluoric acid solution with a mass percentage of 3% by weight is sprayed to activate the surface of the glass substrate with the mask layer at a treatment temperature of 35° C. for 60 seconds.

[0289] In an exemplary embodiment, a solution containing 5% by weight of sodium hydroxide is used to remove the photoresist, and the treatment time is 1 minute.

[0290] In an exemplary embodiment, an etching solution is used to chemically etch the glass substrate on the side with the mask layer, and the glass substrate is cleaned after the etching is completed.

[0291] In an exemplary embodiment, the etching solution includes, by weight, 55 parts of sodium hydroxide, 20 parts of glycerol, and 45 parts of deionized water. The etching time is 8 minutes, and the etching solution temperature is 118°C.

[0292] In an exemplary embodiment, after chemical etching, the depth of the particles on the glass substrate is 5.2-8.5 μm, the maximum particle depth is 8.5 μm, and the maximum difference in depth size between particles is 3.3 μm.

[0293] In an exemplary embodiment, a chromium etching solution is used to remove the metal chromium layer, and the processing time is 5 minutes.

[0294] In an exemplary embodiment, the glass substrate from which the mask layer is removed is chemically polished using an alkaline polishing solution, and the polishing is stopped when the transmission haze reaches 22.4%.

[0295] In an exemplary embodiment, the polishing liquid includes, by weight, 55 parts of sodium hydroxide and 45 parts of deionized water. The temperature of the polishing liquid is 118° C., and the polishing time is 22 minutes.

[0296] In an exemplary embodiment, the surface particle depth of the anti-glare glass obtained after polishing is 2.1 - 3.9 μm, the maximum difference in the depth dimension between particles is 1.8 μm, the particle diameter is 18.5 - 29.7 μm, and the maximum difference in the diameter dimension between particles is 11.2 μm.

[0297] In an exemplary embodiment, for the anti-glare glass of the embodiment of the present application, the specular gloss at a 60-degree angle is 26.2 GU; the DOI is 0.7%; the haze is 22.4%; the surface roughness is 0.281 μm; there is no flash point; there is no moiré pattern; there is no rainbow pattern.

[0298] In an exemplary embodiment, as needed, the mask layer may only include a photosensitive layer, that is, only a photoresist is provided without using a metal chromium layer; it can be understood that when the metal chromium layer is not provided, there is naturally no need to use a chromium etchant to etch the metal chromium layer.

[0299] In an exemplary embodiment, as needed, after the chemical etching step is completed and before chemical polishing, the glass substrate may also be cleaned.

[0300] Example 9 In an exemplary embodiment, first, a 200-nm-thick chromium metal film layer is deposited on one side of the clean glass by vacuum evaporation, and then a 2-μm-thick photoresist is coated on the surface of the chromium film layer by roll coating.

[0301] In an exemplary embodiment, the chromium metal film layer is deposited by a planar continuous vacuum evaporation machine with a power of 5 KW and a linear speed of 7 mm / s.

[0302] In an exemplary embodiment, then a preset pattern is formed on the surface of the photoresist by exposure and development, and the pattern distribution rules are as follows: a through-hole array formed by irregular arrangement of multiple through-holes.

[0303] In an exemplary embodiment, the diameter of the through-holes in the through-hole array is 5 - 7 μm, the diameter value gradient of the through-holes is 0.5 μm (i.e., 5 μm, 5.5 μm, 6 μm, 6.5 μm, 7 μm), and it is normally distributed or approximately normally distributed with 6 μm as the central value, where the proportion of the 6-μm aperture is about 50%, the proportion of the 5-μm aperture is about 10%, the proportion of the 5.5-μm aperture is about 15%, the proportion of the 6.5-μm aperture is about 15%, and the proportion of the 7-μm aperture is about 10%.

[0304] In an exemplary embodiment, the center distance between adjacent holes in the through-hole array is 18 - 22 μm, that is, the difference between the maximum size and the minimum size of the center distance between adjacent through-holes is 4 μm.

[0305] In an exemplary embodiment, the center distance between adjacent holes on the via hole array is 18 - 22 μm, that is, the maximum center distance dimension is 22 μm, and the minimum center distance dimension is 18 μm. That is, the center distance is divided into five equal parts: 18 μm, 19 μm, 20 μm, 21 μm, and 22 μm, and the quantity proportion within each equal part is the same, that is, each accounts for one-fifth.

[0306] In an exemplary embodiment, a chromium etching solution is used to transfer the photoresist surface pattern onto the metal chromium layer, and the corresponding hole pattern array is exposed on the metal chromium layer until the corresponding hole pattern array of the glass substrate is exposed.

[0307] In an exemplary embodiment, the chromium etching solution is composed of ammonium cerium nitrate, glacial acetic acid, and deionized water, wherein the mass proportion of ammonium cerium nitrate is 16%wt, the mass proportion of glacial acetic acid is 3%wt, and the mass proportion of deionized water is 81%wt. The etching time is 3 min.

[0308] In an exemplary embodiment, an acid-resistant PET protective film is attached to the side of the glass substrate without the mask layer, and a solution with a mass proportion of 3%wt of hydrofluoric acid is used to perform surface activation treatment on the side of the glass substrate with the mask layer by the spraying method. The treatment temperature is 35°C, and the treatment time is 60 s.

[0309] In an exemplary embodiment, a solution with a mass proportion of 5%wt of sodium hydroxide is used to remove the photoresist, and the treatment time is 1 min.

[0310] In an exemplary embodiment, an etching solution is used to chemically etch the side of the glass substrate with the mask layer, and after the etching is completed, the glass substrate is cleaned.

[0311] In an exemplary embodiment, the etching solution includes, by mass parts: 55 parts of sodium hydroxide, 20 parts of glycerol, and 45 parts of deionized water. The etching time is 9 min, and the etching temperature is 118°C.

[0312] In an exemplary embodiment, after chemical etching, the particle depth on the glass substrate is 5.1 - 8.3 μm, the maximum particle depth is 8.3 μm, and the maximum difference in depth dimensions between particles is 3.2 μm.

[0313] In an exemplary embodiment, a chromium etching solution is used to remove the metal chromium layer, and the treatment time is 5 min.

[0314] In an exemplary embodiment, an alkaline polishing solution is used to chemically polish the side of the glass substrate from which the mask layer has been removed, and the polishing is stopped when the transmission haze reaches 22.5%.

[0315] In an exemplary embodiment, the polishing liquid includes, by mass parts: 55 parts of sodium hydroxide, 45 parts of deionized water, a temperature of 118 °C, and a polishing time of 22 min.

[0316] In an exemplary embodiment, the surface particle depth of the anti-glare glass obtained after polishing is 1.8 - 3.5 μm, and the maximum difference in the depth dimension between particles is 1.7 μm; the particle diameter is 16.9 - 26.4 μm, and the maximum difference in the diameter dimension is 9.5 μm.

[0317] In an exemplary embodiment, for the anti-glare glass of the embodiment of the present application, the specular gloss at a 60-degree angle: 27.1 GU; DOI: 0.7%; haze: 22.5%; roughness: 0.233 μm; flash point: none; moiré pattern: none; rainbow pattern: none.

[0318] In an exemplary embodiment, as needed, the mask layer may only include a photosensitive layer, that is, only a photoresist is provided without using a metal chromium layer; it can be understood that when the metal chromium layer is not provided, naturally there is no need to use a chromium etchant to etch the metal chromium layer.

[0319] In an exemplary embodiment, as needed, after the chemical etching step is completed and before chemical polishing, cleaning of the glass substrate may also be included.

[0320] Example 10 In an exemplary embodiment, first, a chromium metal film layer with a thickness of 200 nm is deposited on one side of a clean glass by vacuum evaporation, and then a photoresist layer with a thickness of 2 μm is coated on the surface of the chromium film layer by roll coating.

[0321] In an exemplary embodiment, the chromium metal film layer is deposited by a planar continuous vacuum evaporation machine with a power of 5 KW and a linear speed of 7 mm / s.

[0322] In an exemplary embodiment, then a preset pattern is formed on the surface of the photoresist by exposure and development, and the pattern distribution rule is as follows: a via array formed by irregular arrangement of multiple vias.

[0323] In an exemplary embodiment, the diameter of the vias in the via array is 5 - 7 μm, that is, the difference between the maximum diameter dimension and the minimum diameter dimension of the vias is 2 μm, the maximum diameter dimension of the vias on the mask layer is 7 μm, and the minimum diameter dimension is 5 μm. The vias are divided into a total of 5 equal parts of 5 μm, 5.5 μm, 6 μm, 6.5 μm, and 7 μm according to 5 - 7 μm. The number of vias in each equal part accounts for the same proportion on the mask layer. It can be understood that the number of 5-μm vias is the same as the number of 5.5-μm, 6-μm, 6.5-μm, and 7-μm vias, and each accounts for one-fifth of the total number of vias on the mask layer.

[0324] In an exemplary embodiment, the center distance between adjacent holes in the via hole array is 18 - 23 μm, that is, the difference between the maximum size and the minimum size of the center distance between adjacent via holes is 5 μm.

[0325] In an exemplary embodiment, the center distance between adjacent holes in the via hole array is 18 - 23 μm, that is, the maximum center distance size is 23 μm, the minimum center distance size is 18 μm, that is, the center distance is divided into six equal parts: 18 μm, 19 μm, 20 μm, 21 μm, 22 μm, and 23 μm. The quantity proportion within each equal part is the same, that is, each accounts for one-sixth.

[0326] In an exemplary embodiment, a photoresist surface pattern is transferred onto a metal chromium layer using a chromium etching solution, and the corresponding hole pattern array is exposed on the metal chromium layer until the corresponding hole pattern array of the glass substrate is exposed.

[0327] In an exemplary embodiment, the chromium etching solution is composed of ammonium cerium nitrate, glacial acetic acid, and deionized water, where the mass proportion of ammonium cerium nitrate is 16%wt, the mass proportion of glacial acetic acid is 3%wt, and the mass proportion of deionized water is 81%wt. The etching time is 3 min.

[0328] In an exemplary embodiment, an acid-resistant PET protective film is attached to the side of the glass substrate without a mask layer, and a solution with a mass proportion of 3%wt of hydrofluoric acid is used to perform surface activation treatment on the side of the glass substrate with a mask layer by the spraying method. The treatment temperature is 35°C, and the treatment time is 60 s.

[0329] In an exemplary embodiment, a chemical etching is performed on the side of the glass substrate with a mask layer using an etching solution, and after the etching is completed, the glass substrate is cleaned.

[0330] In an exemplary embodiment, the etching solution includes, by mass parts: 60 parts of sodium hydroxide, 20 parts of glycerol, and 40 parts of deionized water. The etching time is 9 min, and the temperature of the etching solution is 115°C.

[0331] In an exemplary embodiment, after chemical etching, the particle depth on the glass substrate is 4.7 - 8.5 μm, the maximum particle depth is 8.5 μm, and the maximum difference in depth size between particles is 3.8 μm.

[0332] In an exemplary embodiment, a solution with a mass proportion of 5%wt of sodium hydroxide is used to remove the photoresist, and the treatment time is 1 min.

[0333] In an exemplary embodiment, a chromium etching solution is used to remove the metal chromium layer, and the treatment time is 5 min.

[0334] In an exemplary embodiment, the glass substrate on the side where the mask layer is removed is chemically polished and stopped when the transmission haze reaches 40.9%.

[0335] In an exemplary embodiment, the polishing liquid includes, by mass: 60 parts of sodium hydroxide and 40 parts of deionized water. The temperature of the polishing liquid is 115 °C and the polishing time is 13 min.

[0336] In an exemplary embodiment, the surface particle depth of the anti-glare glass obtained after polishing is 2.7 - 5.8 μm, the maximum difference in the depth dimension between particles is 3.1 μm, the particle diameter is 17.1 - 27.3 μm, and the maximum difference in the diameter dimension between particles is 10.2 μm.

[0337] In an exemplary embodiment, for the anti-glare glass of the embodiment of the present application, the specular gloss at a 60-degree angle is 18.3 GU; the DOI is 0.5%; the haze is 40.9%; the roughness is 0.373 μm; there is no flash point; there is no moiré; there is no rainbow pattern.

[0338] In an exemplary embodiment, as needed, the mask layer may only include a photosensitive layer, that is, only a photoresist is provided without using a metal chromium layer; it can be understood that when the metal chromium layer is not provided, there is naturally no need to use a chromium etchant to etch the metal chromium layer.

[0339] In an exemplary embodiment, as needed, after the chemical etching step is completed and before chemical polishing, the glass substrate may also be cleaned.

[0340] Example 11 In an exemplary embodiment, first, a 200-nm-thick chromium metal film layer is deposited on one side of a clean glass by vacuum evaporation, and then a 2-μm-thick photoresist is coated on the surface of the chromium film layer by roll coating.

[0341] In an exemplary embodiment, the chromium metal film layer is deposited by a planar continuous vacuum evaporation machine with a power of 5 KW and a linear speed of 7 mm / s.

[0342] In an exemplary embodiment, then a preset pattern is formed on the surface of the photoresist by exposure and development, and the pattern distribution rules are as follows: a via array formed by irregularly arranging a plurality of vias.

[0343] In an exemplary embodiment, the diameter of the vias in the via array is 7 - 13 μm, that is, the difference between the maximum diameter size and the minimum diameter size of the vias is 6 μm. The maximum diameter size of the vias on the mask layer is 13 μm, and the minimum diameter size is 7 μm. The vias are divided into a total of 7 equal parts of 7 μm, 8 μm, 9 μm, 10 μm, 11 μm, 12 μm, and 13 μm according to 7 - 13 μm. The proportion of the number of vias in each equal part on the mask layer is the same. It can be understood that the number of 7 - μm vias is the same as the number of vias of 8 μm, 9 μm, 10 μm, 11 μm, 12 μm, and 13 μm, and each accounts for one - seventh of the total number of vias on the mask layer.

[0344] In an exemplary embodiment, the center - to - center distance of adjacent holes on the via array is 37 - 43 μm, that is, the difference between the maximum center - to - center distance size and the minimum size of adjacent vias is 6 μm.

[0345] In an exemplary embodiment, the center - to - center distance of adjacent vias on the via array is 37 - 43 μm, that is, the maximum center - to - center distance size is 43 μm, and the minimum center - to - center distance size is 37 μm. The center - to - center distance is divided into 37 μm, 38 μm, 39 μm, 40 μm, 41 μm, 42 μm, and 43 μm. It can be understood that the value gradient of the center - to - center distance is 1 μm, and it is normally distributed or approximately normally distributed with 39 - 41 μm as the central value. Among them, the proportion of 37 - 38 μm is 25%, the proportion of 39 - 41 μm is 50%, and the proportion of 42 - 43 μm is 25%.

[0346] In an exemplary embodiment, a chromium etchant is used to transfer the photoresist surface pattern onto the metal chromium layer, and the corresponding hole - type array pattern is exposed on the metal chromium layer until the corresponding hole - type array pattern of the glass substrate is exposed.

[0347] In an exemplary embodiment, the chromium etchant is composed of ammonium cerium nitrate, glacial acetic acid, and deionized water. Among them, the mass proportion of ammonium cerium nitrate is 16%wt, the mass proportion of glacial acetic acid is 3%wt, and the mass proportion of deionized water is 81%wt. The etching time is 3 min.

[0348] In an exemplary embodiment, an acid - resistant PET protective film is attached to the side of the glass substrate without the mask layer. A solution with a mass proportion of hydrofluoric acid of 3%wt is used to perform surface activation treatment on the side of the glass substrate with the mask layer by the spraying method. The treatment temperature is 35°C, and the treatment time is 60 s.

[0349] In an exemplary embodiment, a fluorine - containing acidic etchant is used to chemically etch the side of the glass substrate with the mask layer, and the glass substrate is cleaned after etching is completed.

[0350] In an exemplary embodiment, the etching solution includes, by mass parts: 15 parts of ammonium bifluoride, 3 parts of potassium bifluoride, 30 parts of glycerol, and 35 parts of deionized water. The etching time is 11 min, and the temperature of the etching solution is 22 °C.

[0351] In an exemplary embodiment, after chemical etching, the particle depth on the glass substrate is 8.9 - 12.8 μm, the maximum particle depth is 12.8 μm, and the maximum difference in depth dimensions between particles is 3.9 μm.

[0352] In an exemplary embodiment, a solution with a 5%wt sodium hydroxide mass ratio is used to remove the photoresist, and the treatment time is 1 min.

[0353] In an exemplary embodiment, a chromium etching solution is used to remove the metal chromium layer, and the treatment time is 5 min.

[0354] In an exemplary embodiment, the glass substrate on the side where the mask layer is removed is chemically polished and stopped when the transmission haze reaches 22.3%.

[0355] In an exemplary embodiment, the polishing solution includes, by mass parts: 10 parts of hydrofluoric acid, 10 parts of sulfuric acid, and 68 parts of deionized water. The temperature of the polishing solution is 30 °C, and the polishing time is 52 min.

[0356] In an exemplary embodiment, the surface particle depth of the anti-glare glass obtained after polishing is 1.6 - 5.3 μm, the maximum difference in depth dimensions between particles is 3.7 μm, the particle diameter is 32.9 - 72.2 μm, and the maximum difference in diameter dimensions between particles is 39.3 μm.

[0357] In an exemplary embodiment, for the anti-glare glass of the embodiment of the present application, the specular gloss at a 60-degree angle is 27.2 GU; the DOI is 0.3%; the haze is 22.3%; the roughness is 0.688 μm; the flash point is none; the moiré pattern is none; the rainbow pattern is none.

[0358] In an exemplary embodiment, as needed, the mask layer may only include a photosensitive layer, that is, only a photoresist is provided without using a metal chromium layer; it can be understood that when the metal chromium layer is not provided, there is naturally no need to use a chromium etching solution to etch the metal chromium layer.

[0359] In an exemplary embodiment, as needed, after the chemical etching step is completed and before chemical polishing, the glass substrate can also be cleaned.

[0360] Example 12 In an exemplary embodiment, first, a chromium metal film layer with a thickness of 200 nm is deposited on one side of a clean glass by vacuum evaporation, and then a photoresist layer with a thickness of 2 μm is coated on the surface of the chromium film layer by roll coating.

[0361] In an exemplary embodiment, the chromium metal film layer is deposited by a planar continuous vacuum evaporation machine with a power of 5 KW and a linear speed of 7 mm / s.

[0362] In an exemplary embodiment, then a preset pattern is formed on the surface of the photoresist by exposure and development, and the pattern distribution rules are as follows: a via array formed by irregular arrangement of multiple vias.

[0363] In an exemplary embodiment, the diameter of the vias in the via array is 7 - 13 μm, that is, the difference between the maximum diameter size and the minimum diameter size of the vias is 6 μm. The maximum diameter size of the vias on the mask layer is 13 μm, and the minimum diameter size is 7 μm. The vias are divided into 7 equal parts of 7 μm, 8 μm, 9 μm, 10 μm, 11 μm, 12 μm, and 13 μm. The number of vias in each equal part accounts for the same proportion on the mask layer. It can be understood that the number of 7-μm vias is the same as that of 8-μm, 9-μm, 10-μm, 11-μm, 12-μm, and 13-μm vias, and each accounts for one-seventh of the total number of vias on the mask layer.

[0364] In an exemplary embodiment, the center distance between adjacent holes in the via array is 35 - 45 μm, that is, the difference between the maximum size and the minimum size of the center distance between adjacent vias is 10 μm.

[0365] In an exemplary embodiment, the center distance between adjacent holes in the via array is 35 - 45 μm, that is, the maximum center distance size is 45 μm, and the minimum center distance size is 35 μm. The center distance is divided into 11 equal parts of 35 μm, 36 μm, 37 μm, 38 μm, 39 μm, 40 μm, 41 μm, 42 μm, 43 μm, 44 μm, and 45 μm. The number in each equal part accounts for the same proportion, that is, each accounts for one-eleventh.

[0366] In an exemplary embodiment, a chromium etchant is used to transfer the pattern on the surface of the photoresist to the metal chromium layer, and the corresponding hole pattern array is exposed on the metal chromium layer until the corresponding hole pattern array of the glass substrate is exposed.

[0367] In an exemplary embodiment, the chromium etchant is composed of ammonium cerium nitrate, glacial acetic acid, and deionized water. Among them, the mass proportion of ammonium cerium nitrate is 16%wt, the mass proportion of glacial acetic acid is 3%wt, and the mass proportion of deionized water is 81%wt. The etching time is 3 min.

[0368] In an exemplary embodiment, an acid-resistant PET protective film is attached to the side of the glass substrate without the mask layer, and a solution with a mass ratio of hydrofluoric acid of 3%wt is used to perform surface activation treatment on the side of the glass substrate with the mask layer by the spraying method. The treatment temperature is 35°C and the treatment time is 60s.

[0369] In an exemplary embodiment, a chemical etching is performed on the side of the glass substrate with the mask layer using an etching solution, and after the etching is completed, the glass substrate is cleaned.

[0370] In an exemplary embodiment, the etching solution includes, by mass parts: 55 parts of sodium hydroxide, 20 parts of glycerol, and 45 parts of deionized water. The etching time is 16 min and the temperature of the etching solution is 120°C.

[0371] In an exemplary embodiment, after the chemical etching, the particle depth on the glass substrate is 10.2 - 14.7 μm, the maximum particle depth is 14.7 μm, and the maximum difference in depth dimensions between particles is 4.5 μm.

[0372] In an exemplary embodiment, a solution with a mass ratio of sodium hydroxide of 5%wt is used to remove the photoresist, and the treatment time is 1 min.

[0373] In an exemplary embodiment, a chromium etching solution is used to remove the metal chromium layer, and the treatment time is 5 min.

[0374] In an exemplary embodiment, chemical polishing is performed on the side of the glass substrate from which the mask layer has been removed, and the polishing is stopped when the transmission haze reaches 53.4%.

[0375] In an exemplary embodiment, the polishing solution includes, by mass parts: 55 parts of sodium hydroxide, 45 parts of deionized water. The temperature of the polishing solution is 120°C and the polishing time is 22 min.

[0376] In an exemplary embodiment, the surface particle depth of the anti-glare glass obtained after polishing is 2.9 - 6.9 μm, the maximum difference in depth dimensions between particles is 4 μm, the particle diameter is 33.4 - 51.8 μm, and the maximum difference in diameter dimensions between particles is 18.4 μm.

[0377] In an exemplary embodiment, for the anti-glare glass of the embodiment of the present application, the specular gloss at 60 degrees: 15.1 GU; DOI: 0.4%; Haze: 53.4%; Roughness: 0.886 μm; Flash point: none; Moiré pattern: none; Rainbow pattern: none.

[0378] In an exemplary embodiment, if necessary, the mask layer may only include a photosensitive layer, that is, only a photoresist is provided without using a metal chromium layer. It can be understood that when the metal chromium layer is not provided, there is naturally no need to use a chromium etching solution to etch the metal chromium layer.

[0379] In an exemplary embodiment, if necessary, after the chemical etching step and before chemical polishing, cleaning of the glass substrate may also be included.

[0380] Example 13 In an exemplary embodiment, first, a 200-nm-thick chromium metal film layer is deposited on one side of a clean glass by vacuum evaporation, and then a 2-μm-thick photoresist is coated on the surface of the chromium film layer by roll coating.

[0381] In an exemplary embodiment, the chromium metal film layer is deposited by a planar continuous vacuum evaporation machine with a power of 5 KW and a linear speed of 7 mm / s.

[0382] In an exemplary embodiment, then a preset pattern is formed on the surface of the photoresist by exposure and development. The pattern distribution rules are as follows: a via array formed by irregular arrangement of multiple vias.

[0383] In an exemplary embodiment, the diameter of the vias in the via array is 7 - 13 μm, that is, the difference between the maximum diameter size and the minimum diameter size of the vias is 6 μm. The maximum diameter size of the vias on the mask layer is 13 μm, and the minimum diameter size is 7 μm. The vias are divided into a total of 7 equal parts of 7 μm, 8 μm, 9 μm, 10 μm, 11 μm, 12 μm, and 13 μm according to 7 - 13 μm. The number of vias in each equal part accounts for the same proportion on the mask layer. It can be understood that the number of 7-μm vias is the same as that of 8-μm, 9-μm, 10-μm, 11-μm, 12-μm, and 13-μm vias, and each accounts for one-seventh of the total number of vias on the mask layer.

[0384] In an exemplary embodiment, the center distance between adjacent holes in the via array is 50 - 55 μm, that is, the difference between the maximum size and the minimum size of the center distance between adjacent vias is 5 μm.

[0385] In an exemplary embodiment, the center distance between adjacent holes in the via array is 50 - 55 μm, that is, the maximum center distance size is 55 μm, and the minimum center distance size is 50 μm. That is, the center distance is divided into a total of six equal parts of 50 μm, 51 μm, 52 μm, 53 μm, 54 μm, and 55 μm, and the number in each equal part accounts for the same proportion, that is, each accounts for one-sixth.

[0386] In an exemplary embodiment, a chromium etching solution is used to transfer the surface pattern of the photoresist to the metal chromium layer, and a corresponding hole array pattern is exposed on the metal chromium layer until the glass substrate exposes the corresponding hole array pattern.

[0387] In an exemplary embodiment, the chromium etching solution is composed of ammonium cerium nitrate, glacial acetic acid, and deionized water, wherein the mass proportion of ammonium cerium nitrate is 16%wt, the mass proportion of glacial acetic acid is 3%wt, and the mass proportion of deionized water is 81%wt. The etching time is 3 minutes.

[0388] In an exemplary embodiment, an acid-resistant PET protective film is attached to the side of the glass substrate without the mask layer, and a hydrofluoric acid solution with a mass percentage of 3% by weight is sprayed to activate the surface of the glass substrate with the mask layer at a treatment temperature of 35° C. for 60 seconds.

[0389] In an exemplary embodiment, a fluorine-containing acidic etching solution is used to chemically etch the glass substrate on the side with the mask layer, and the glass substrate is cleaned after the etching is completed.

[0390] In an exemplary embodiment, the etching solution includes, by weight, 15 parts of ammonium bifluoride, 4 parts of potassium bifluoride, 30 parts of glycerol, and 40 parts of deionized water. The etching time is 14 minutes, and the etching solution temperature is 20°C.

[0391] In an exemplary embodiment, after chemical etching, the depth of the particles on the glass substrate is 9.8-12.7 μm, the maximum particle depth is 12.7 μm, and the maximum difference in depth size between particles is 2.9 μm.

[0392] In an exemplary embodiment, a solution containing 5% by weight of sodium hydroxide is used to remove the photoresist, and the treatment time is 1 minute.

[0393] In an exemplary embodiment, a chromium etching solution is used to remove the metal chromium layer, and the processing time is 5 minutes.

[0394] In an exemplary embodiment, the glass substrate on the side where the mask layer is removed is chemically polished, and the polishing is stopped when the transmission haze reaches 22.2%.

[0395] In an exemplary embodiment, the polishing liquid includes, by weight, 55 parts of sodium hydroxide and 45 parts of deionized water. The temperature of the polishing liquid is 123° C., and the polishing time is 62 minutes.

[0396] In an exemplary embodiment, the surface particle depth of the anti-glare glass obtained after polishing is 2.6 - 5.9 μm, the maximum difference in the depth dimension between particles is 3.3 μm, the particle diameter is 41.9 - 86.2 μm, and the maximum difference in the diameter dimension between particles is 44.3 μm.

[0397] In an exemplary embodiment, for the anti-glare glass of the embodiment of the present application, the specular gloss at a 60-degree angle: 26.7 GU; DOI: 0.8%; haze: 22.2%; roughness: 0.657 μm; flash point: none; moiré pattern: none; rainbow pattern: none.

[0398] In an exemplary embodiment, as needed, the mask layer may only include a photosensitive layer, that is, only a photoresist is provided without using a metal chromium layer; it can be understood that when the metal chromium layer is not provided, there is naturally no need to use a chromium etchant to etch the metal chromium layer.

[0399] In an exemplary embodiment, as needed, after the chemical etching step is completed and before chemical polishing, the glass substrate can also be cleaned.

[0400] Example 14 In an exemplary embodiment, first, a chromium metal film layer with a thickness of 200 nm is deposited on one side of the clean glass by vacuum evaporation, and then a photoresist layer with a thickness of 2 μm is coated on the surface of the chromium film layer by roll coating.

[0401] In an exemplary embodiment, the chromium metal film layer is deposited by a planar continuous vacuum evaporation machine with a power of 5 KW and a linear speed of 7 mm / s.

[0402] In an exemplary embodiment, then a preset pattern is formed on the surface of the photoresist by exposure and development, and the pattern distribution rules are as follows: a through-hole array formed by irregular arrangement of multiple through-holes.

[0403] In an exemplary embodiment, the diameter of the through-holes in the through-hole array is 7 - 13 μm, that is, the difference between the maximum diameter dimension and the minimum diameter dimension of the through-holes is 6 μm. The maximum diameter dimension of the through-holes on the mask layer is 13 μm, and the minimum diameter dimension is 7 μm. The through-holes are divided into a total of 7 equal parts of 7 μm, 8 μm, 9 μm, 10 μm, 11 μm, 12 μm, and 13 μm according to 7 - 13 μm. The proportion of the number of through-holes in each equal part on the mask layer is the same. It can be understood that the number of 7-μm through-holes is the same as the number of 8-μm, 9-μm, 10-μm, 11-μm, 12-μm, and 13-μm through-holes, and each accounts for one-seventh of the total number of through-holes on the mask layer.

[0404] In an exemplary embodiment, the distance between the centers of adjacent holes in the through-hole array is 60-70 μm, that is, the difference between the maximum and minimum dimensions of the centers of adjacent through-holes is 10 μm.

[0405] In an exemplary embodiment, the center distance between adjacent through holes in the through hole array is 60-70 μm, that is, the maximum center distance size is 70 μm, the minimum center distance size is 60 μm, and the center distances are divided into 60 μm, 61 μm, 62 μm, 63 μm, 64 μm, 65 μm, 66 μm, 67 μm, 68 μm, 69 μm and 70 μm. It can be understood that the center distance value gradient is 1 μm, and is normally distributed or similar to a normal distribution with 65 μm as the center value, among which 60-62 μm accounts for 25%, 63-67 μm accounts for 50%, and 68-70 μm accounts for 25%.

[0406] In an exemplary embodiment, a chromium etching solution is used to transfer the surface pattern of the photoresist to the metal chromium layer, and a corresponding hole array pattern is exposed on the metal chromium layer until the glass substrate exposes the corresponding hole array pattern.

[0407] In an exemplary embodiment, the chromium etching solution is composed of ammonium cerium nitrate, glacial acetic acid, and deionized water, wherein the mass proportion of ammonium cerium nitrate is 16%wt, the mass proportion of glacial acetic acid is 3%wt, and the mass proportion of deionized water is 81%wt. The etching time is 3 minutes.

[0408] In an exemplary embodiment, an acid-resistant PET protective film is attached to the side of the glass substrate without the mask layer, and a hydrofluoric acid solution with a mass percentage of 3% by weight is sprayed to activate the surface of the glass substrate with the mask layer at a treatment temperature of 35° C. for 60 seconds.

[0409] In an exemplary embodiment, an etching solution is used to chemically etch the glass substrate on the side with the mask layer, and the glass substrate is cleaned after the etching is completed.

[0410] In an exemplary embodiment, the etching solution includes, by weight, 48 parts of sodium hydroxide, 30 parts of glycerol, and 50 parts of deionized water. The etching time is 14 minutes, and the etching solution temperature is 123°C.

[0411] In an exemplary embodiment, after chemical etching, the depth of the particles on the glass substrate is 8.6-12.5 μm, the maximum particle depth is 12.5 μm, and the maximum difference in depth size between particles is 3.9 μm.

[0412] In an exemplary embodiment, a solution containing 5% by weight of sodium hydroxide is used to remove the photoresist, and the treatment time is 1 minute.

[0413] In an exemplary embodiment, a chromium etchant is used to remove the metal chromium layer, and the treatment time is 5 minutes.

[0414] In an exemplary embodiment, the glass substrate on the side where the mask layer is removed is chemically polished and stopped when the transmission haze reaches 30.1%.

[0415] In an exemplary embodiment, the polishing liquid includes, by mass: 53 parts of sodium hydroxide and 48 parts of deionized water. The temperature of the polishing liquid is 125 °C, and the polishing time is 65 minutes.

[0416] In an exemplary embodiment, the surface particle depth of the antiglare glass obtained after polishing is 1.6 - 6.7 μm, the maximum difference in the depth dimension between particles is 5.1 μm, the particle diameter is 54.6 - 96.59 μm, and the maximum difference in the diameter dimension between particles is 41.99 μm.

[0417] In an exemplary embodiment, for the antiglare glass of the embodiment of the present application, the specular gloss at a 60-degree angle: 23.2 GU; DOI: 0.3%; haze: 30.1%; roughness: 0.934 μm; flash point: none; moiré pattern: none; rainbow pattern: none.

[0418] In an exemplary embodiment, as needed, the mask layer may only include a photosensitive layer, that is, only a photoresist is provided without using a metal chromium layer; it can be understood that when the metal chromium layer is not provided, there is naturally no need to use a chromium etchant to etch the metal chromium layer.

[0419] In an exemplary embodiment, as needed, after the chemical etching step and before the chemical polishing, the glass substrate can also be cleaned.

[0420] Example 15 In an exemplary embodiment, first, a 200-nm-thick chromium metal film layer is deposited on one side of a clean glass by vacuum evaporation, and then a 2-μm-thick photoresist is coated on the surface of the chromium film layer by roll coating.

[0421] In an exemplary embodiment, the chromium metal film layer is deposited by a planar continuous vacuum evaporation machine with a power of 5 KW and a linear speed of 7 mm / s.

[0422] In an exemplary embodiment, then a preset pattern is formed on the surface of the photoresist by exposure and development, and the pattern distribution rule is as follows: a via array formed by irregular arrangement of multiple vias.

[0423] In an exemplary embodiment, the diameter of the vias in the via array is 7 - 13 μm, and the difference in diameter dimensions between adjacent vias is controlled within 0.5 - 1 μm. For example, the difference in diameter dimensions between adjacent vias is 1 μm. It can be understood that the variation range of the diameters between adjacent vias on the via array is controlled within 1 μm, that is, the via diameters are 7 μm, 8 μm, 9 μm, 10 μm, 11 μm, 12 μm, and 13 μm, and are normally distributed or approximately normally distributed with 10 μm as the central value. Among them, the aperture ratio of 7 - 8 μm accounts for about 25%, the aperture ratio of 9 - 11 μm accounts for about 50%, and the aperture ratio of 12 - 13 μm accounts for about 25%.

[0424] In an exemplary embodiment, the center distance between adjacent holes on the via array is 70 - 80 μm.

[0425] In an exemplary embodiment, the center distance between adjacent holes on the via array is 70 - 80 μm, that is, the maximum center distance dimension is 80 μm, and the minimum center distance dimension is 70 μm. That is, the center distances are 70 μm, 72 μm, 74 μm, 76 μm, 78 μm, and 80 μm, a total of six equal parts, and the quantity ratio within each equal part is the same, that is, each accounts for one-sixth.

[0426] In an exemplary embodiment, the pattern on the photoresist surface is transferred to the metal chromium layer using a chromium etching solution, and the corresponding hole pattern array is exposed on the metal chromium layer until the corresponding hole pattern array is exposed on the glass substrate.

[0427] In an exemplary embodiment, the chromium etching solution is composed of ammonium cerium nitrate, glacial acetic acid, and deionized water, wherein the mass ratio of ammonium cerium nitrate is 16% wt, the mass ratio of glacial acetic acid is 3% wt, and the mass ratio of deionized water is 81% wt of the chromium etching solution, and the etching time is 3 min.

[0428] In an exemplary embodiment, an acid-resistant PET protective film is attached to the side of the glass substrate without a mask layer, and a solution with a mass ratio of 3% wt of hydrofluoric acid is used to perform surface activation treatment on the side of the glass substrate with a mask layer by the spraying method, with a treatment temperature of 35 °C and a treatment time of 60 s.

[0429] In an exemplary embodiment, the glass substrate on the side with a mask layer is chemically etched using an alkaline etching solution, and after etching is completed, the glass substrate is cleaned.

[0430] In an exemplary embodiment, the etching solution includes, by mass parts: 55 parts of sodium hydroxide, 28 parts of glycerol, and 45 parts of deionized water, with an etching time of 15.5 min and an etching solution temperature of 120 °C.

[0431] In an exemplary embodiment, after chemical etching, the particle depth on the glass substrate is 9.2 - 14.7 μm, the maximum particle depth is 14.7 μm, and the maximum difference in depth size between particles is 5.5 μm.

[0432] In an exemplary embodiment, a solution with a 5%wt sodium hydroxide mass ratio is used to remove the photoresist, and the treatment time is 1 min.

[0433] In an exemplary embodiment, a chromium etchant is used to remove the metal chromium layer, and the treatment time is 5 min.

[0434] In an exemplary embodiment, the glass substrate on the side where the mask layer is removed is chemically polished and stopped when the transmission haze reaches 67.1%.

[0435] In an exemplary embodiment, the polishing liquid includes, by mass parts: 10 parts of hydrofluoric acid, 10 parts of sulfuric acid, and 68 parts of deionized water. The temperature of the polishing liquid is 32 °C, and the polishing time is 37 min.

[0436] In an exemplary embodiment, the surface particle depth of the anti-glare glass obtained after polishing is 2.8 - 7.2 μm, the maximum difference in depth size between particles is 4.4 μm, the particle diameter is 72.72 - 96.76 μm, and the maximum difference in diameter size between particles is 24.04 μm.

[0437] In an exemplary embodiment, for the anti-glare glass of the embodiment of the present application, the specular gloss at a 60-degree angle is 15.5 GU; the DOI is 0.7%; the haze is 67.1%; the roughness is 1.231 μm; the flash point is none; the moiré pattern is none; the rainbow pattern is none.

[0438] In an exemplary embodiment, as needed, the mask layer may only include a photosensitive layer, that is, only a photoresist is provided without using a metal chromium layer; it can be understood that when the metal chromium layer is not provided, there is naturally no need to use a chromium etchant to etch the metal chromium layer.

[0439] In an exemplary embodiment, as needed, after the chemical etching step is completed and before chemical polishing, the glass substrate can also be cleaned. <![CDATA[ ]]>

[0440] Example 16 In an exemplary embodiment, first, a 200-nm-thick chromium metal film layer is deposited on one side of a clean glass by vacuum evaporation, and then a 2-μm-thick photoresist is coated on the surface of the chromium film layer by roll coating.

[0441] In an exemplary embodiment, the chromium metal film layer is deposited by a planar continuous vacuum evaporation machine with a power of 5 KW and a linear speed of 7 mm / s.

[0442] In an exemplary embodiment, a pattern is preset on the surface of the photoresist by exposure and development, and the pattern distribution rule is as follows: a via array formed by irregular arrangement of a plurality of vias.

[0443] In an exemplary embodiment, the diameter of the vias in the via array is 10 - 16 μm, that is, the difference between the maximum diameter size and the minimum diameter size of the vias is 6 μm. The maximum diameter size of the vias on the mask layer is 16 μm, and the minimum diameter size is 10 μm. The vias are divided into a total of 7 equal parts of 10 μm, 11 μm, 12 μm, 13 μm, 14 μm, 15 μm, and 16 μm according to 10 - 16 μm. The proportion of the number of vias in each equal part on the mask layer is the same. It can be understood that the number of 10-μm vias is the same as the number of vias of 11 μm, 12 μm, 13 μm, 14 μm, 15 μm, and 16 μm, and each accounts for one-seventh of the total number of vias on the mask layer.

[0444] In an exemplary embodiment, the center distance between adjacent holes in the via array is 90 - 100 μm, that is, the difference between the maximum size and the minimum size of the center distance between adjacent vias is 10 μm.

[0445] In an exemplary embodiment, the center distance between adjacent holes in the via array is 90 - 100 μm, that is, the maximum center distance size is 100 μm, and the minimum center distance size is 90 μm. That is, the center distance is divided into a total of six equal parts of 90 μm, 92 μm, 94 μm, 96 μm, 98 μm, and 100 μm, and the proportion of the number in each equal part is the same, that is, each accounts for one-sixth.

[0446] In an exemplary embodiment, a chromium etching solution is used to transfer the pattern on the surface of the photoresist to the metal chromium layer, and the corresponding hole pattern array is exposed on the metal chromium layer until the corresponding hole pattern array of the glass substrate is exposed.

[0447] In an exemplary embodiment, the chromium etching solution is composed of ammonium cerium nitrate, glacial acetic acid, and deionized water, wherein the mass proportion of ammonium cerium nitrate is 16%wt, the mass proportion of glacial acetic acid is 3%wt, and the mass proportion of deionized water is 81%wt. The etching time is 3 min.

[0448] In an exemplary embodiment, an acid-resistant PET protective film is attached to the side of the glass substrate without the mask layer, and a solution with a mass proportion of 3%wt of hydrofluoric acid is used to perform surface activation treatment on the side of the glass substrate with the mask layer by the spraying method. The treatment temperature is 35°C, and the treatment time is 60 s.

[0449] In an exemplary embodiment, an alkaline etching solution is used to chemically etch the glass substrate on the side with the mask layer, and after the etching is completed, the glass substrate is cleaned.

[0450] In an exemplary embodiment, the etching solution includes, by mass parts: 50 parts of sodium hydroxide, 20 parts of glycerol, and 45 parts of deionized water, the etching time is 18.5 min, and the temperature of the etching solution is 125 °C.

[0451] In an exemplary embodiment, after chemical etching, the particle depth on the glass substrate is 11.6 - 17.1 μm, the maximum particle depth is 17.1 μm, and the maximum difference in depth size between particles is 5.5 μm.

[0452] In an exemplary embodiment, a solution with a 5%wt mass ratio of sodium hydroxide is used to remove the photoresist, and the treatment time is 1 min.

[0453] In an exemplary embodiment, a chromium etching solution is used to remove the metal chromium layer, and the treatment time is 5 min.

[0454] In an exemplary embodiment, the glass substrate on the side where the mask layer is removed is chemically polished, and the polishing is stopped when the transmission haze reaches 71.6%.

[0455] In an exemplary embodiment, the polishing solution includes, by mass parts: 10 parts of hydrofluoric acid, 10 parts of sulfuric acid, and 68 parts of deionized water, the temperature of the polishing solution is 33 °C, and the polishing time is 51 min.

[0456] In an exemplary embodiment, the surface particle depth of the anti-glare glass obtained after polishing is 3.2 - 8.4 μm, the maximum difference in depth size between particles is 5.2 μm, the particle diameter is 88.6 - 113.2 μm, and the maximum difference in diameter size between particles is 24.6 μm.

[0457] In an exemplary embodiment, for the anti-glare glass of the embodiment of the present application, the specular gloss at a 60-degree angle: 16.7 GU; DOI: 0.4%; haze: 71.6%; roughness: 1.71 μm; flash point: none; moiré pattern: none; rainbow pattern: none.

[0458] In an exemplary embodiment, as needed, the mask layer may only include a photosensitive layer, that is, only a photoresist is provided without using a metal chromium layer; it can be understood that when the metal chromium layer is not provided, there is naturally no need to use a chromium etching solution to etch the metal chromium layer.

[0459] In an exemplary embodiment, as needed, after the chemical etching step is completed and before chemical polishing, cleaning of the glass substrate may also be included.

[0460] Example 17 In an exemplary embodiment, first, a chromium metal film layer with a thickness of 200 nm is deposited on one side of a clean glass by vacuum evaporation, and then a photoresist layer with a thickness of 2 μm is coated on the surface of the chromium film layer by roll coating.

[0461] In an exemplary embodiment, the chromium metal film layer is deposited by a planar continuous vacuum evaporation machine with a power of 5 KW and a linear velocity of 7 mm / s.

[0462] In an exemplary embodiment, then a preset pattern is formed on the surface of the photoresist by exposure and development, and the pattern distribution rules are as follows: a via array formed by irregular arrangement of a plurality of vias.

[0463] In an exemplary embodiment, the difference in diameter between vias in the via array with a diameter of 13 - 19 μm is controlled within 0.5 - 1 μm. For example, the difference in diameter between adjacent vias is 1 μm. It can be understood that the variation range of the diameter between adjacent vias on the via array is controlled within 1 μm, that is, the via diameters are 13 μm, 14 μm, 15 μm, 16 μm, 17 μm, 18 μm, and 19 μm, and are normally distributed or approximately normally distributed with 16 μm as the central value, where 13 - 14 μm accounts for about 25%, 15 - 17 μm accounts for about 50%, and 18 - 19 μm accounts for about 25%.

[0464] In an exemplary embodiment, the center distance between adjacent holes on the via array is 90 - 110 μm, that is, the difference between the maximum and minimum center distances of adjacent vias is 20 μm.

[0465] In an exemplary embodiment, the center distance between adjacent vias on the via array is 90 - 110 μm, that is, the maximum center distance size is 110 μm, the minimum center distance size is 90 μm, and the center distances are 90 μm, 92.5 μm, 95 μm, 97.5 μm, 100 μm, 102.5 μm, 105 μm, 107.5 μm, and 110 μm. It can be understood that the value gradient of the center distance is 2.5 μm, and is normally distributed or approximately normally distributed with 100 μm as the central value, where 90 - 95 μm accounts for 25%, 97.5 - 102.5 μm accounts for 50%, and 105 - 110 μm accounts for 25%.

[0466] In an exemplary embodiment, a chromium etchant is used to transfer the pattern on the surface of the photoresist to the metal chromium layer, and the corresponding hole pattern array is exposed on the metal chromium layer until the corresponding hole pattern array of the glass substrate is exposed.

[0467] In an exemplary embodiment, the chromium etching solution is composed of ammonium cerium nitrate, glacial acetic acid, and deionized water, wherein the mass proportion of ammonium cerium nitrate is 16%wt, the mass proportion of glacial acetic acid is 3%wt, and the mass proportion of deionized water is 81%wt. The etching time is 3 minutes.

[0468] In an exemplary embodiment, an acid-resistant PET protective film is attached to the side of the glass substrate without the mask layer, and a hydrofluoric acid solution with a mass percentage of 3% by weight is sprayed to activate the surface of the glass substrate with the mask layer at a treatment temperature of 35° C. for 60 seconds.

[0469] In an exemplary embodiment, an alkaline etching solution is used to chemically etch the glass substrate on the side with the mask layer, and the glass substrate is cleaned after the etching is completed.

[0470] In an exemplary embodiment, the etching solution includes, by weight, 52 parts of sodium hydroxide, 20 parts of glycerol, and 45 parts of deionized water. The etching time is 19 minutes, and the etching solution temperature is 120°C.

[0471] In an exemplary embodiment, after chemical etching, the depth of the particles on the glass substrate is 11.9-17.7 μm, the maximum particle depth is 17.7 μm, and the maximum difference in depth size between particles is 5.8 μm.

[0472] In an exemplary embodiment, a solution containing 5% by weight of sodium hydroxide is used to remove the photoresist, and the treatment time is 1 minute.

[0473] In an exemplary embodiment, a chromium etching solution is used to remove the metal chromium layer, and the processing time is 5 minutes.

[0474] In an exemplary embodiment, the glass substrate on the side where the mask layer is removed is chemically polished, and the polishing is stopped when the transmission haze reaches 36.3%.

[0475] In an exemplary embodiment, the polishing liquid includes, by weight, 52 parts of sodium hydroxide and 45 parts of deionized water. The temperature of the polishing liquid is 124° C., and the polishing time is 70 minutes.

[0476] In an exemplary embodiment, the surface particle depth of the anti-glare glass obtained after polishing is 3.4-6.3 μm, the maximum difference in depth between particles is 2.9 μm, the particle diameter is 86.7-120.1 μm, and the maximum difference in diameter between particles is 33.4 μm.

[0477] In an exemplary embodiment, for the anti-glare glass of the embodiments of the present application, the specular gloss at a 60-degree angle is 18.2 GU; the DOI is 0.5%; the haze is 36.3%; the surface roughness is 1.349 μm; there is no flash point; there is no moiré pattern; there is no rainbow pattern.

[0478] In an exemplary embodiment, as needed, the mask layer may only include a photosensitive layer, that is, only a photoresist is provided without using a metal chromium layer; it can be understood that when the metal chromium layer is not provided, there is naturally no need to use a chromium etchant to etch the metal chromium layer.

[0479] In an exemplary embodiment, as needed, after the chemical etching step is completed and before chemical polishing, the glass substrate may also be cleaned.

[0480] Example 18 In an exemplary embodiment, first, a 200-nm-thick chromium metal film layer is deposited on one side of a clean glass by vacuum evaporation, and then a 2-μm-thick photoresist is coated on the surface of the chromium film layer by roll coating.

[0481] In an exemplary embodiment, the chromium metal film layer is deposited by a planar continuous vacuum evaporation machine with a power of 5 KW and a linear speed of 7 mm / s.

[0482] In an exemplary embodiment, then a preset pattern is formed on the surface of the photoresist by exposure and development, and the pattern distribution rules are as follows: a via array formed by irregular arrangement of a plurality of vias.

[0483] In an exemplary embodiment, the diameter of the vias in the via array is 16 - 22 μm, that is, the difference between the maximum diameter size and the minimum diameter size of the vias is 6 μm. The maximum diameter size of the vias on the mask layer is 22 μm, and the minimum diameter size is 16 μm. The vias are divided into a total of 7 equal parts of 16 μm, 17 μm, 18 μm, 19 μm, 20 μm, 21 μm, and 22 μm according to 16 - 22 μm. The proportion of the number of vias in each equal part on the mask layer is the same. It can be understood that the number of 16-μm vias is the same as the number of 17-μm, 18-μm, 19-μm, 20-μm, 21-μm, and 22-μm vias, and each accounts for one-seventh of the total number of vias on the mask layer.

[0484] In an exemplary embodiment, the center distance between adjacent holes in the via array is 80 - 90 μm, that is, the difference between the maximum size and the minimum size of the center distance between adjacent vias is 10 μm.

[0485] In an exemplary embodiment, the center distance between adjacent holes in the via hole array is 80 - 90 μm, that is, the maximum center distance dimension is 90 μm, and the minimum center distance dimension is 80 μm. That is, the center distance is divided into eleven equal parts: 80 μm, 81 μm, 82 μm, 83 μm, 84 μm, 85 μm, 86 μm, 87 μm, 88 μm, 89 μm, and 90 μm. The quantity proportion within each equal part is the same, that is, each accounts for one-eleventh.

[0486] In an exemplary embodiment, a chromium etching solution is used to transfer the pattern on the photoresist surface to the metal chromium layer, and the corresponding hole pattern array is exposed on the metal chromium layer until the corresponding hole pattern array on the glass substrate is exposed.

[0487] In an exemplary embodiment, the chromium etching solution is composed of ammonium cerium nitrate, glacial acetic acid, and deionized water. Among them, the mass proportion of ammonium cerium nitrate is 16%wt, the mass proportion of glacial acetic acid is 3%wt, and the mass proportion of deionized water is 81%wt. The etching time is 3 min.

[0488] In an exemplary embodiment, an acid-resistant PET protective film is attached to the side of the glass substrate without the mask layer, and a solution with a mass proportion of 3%wt of hydrofluoric acid is used to perform surface activation treatment on the side of the glass substrate with the mask layer by the spraying method. The treatment temperature is 35 °C, and the treatment time is 60 s.

[0489] In an exemplary embodiment, a fluorine-containing acidic etching solution is used to chemically etch the side of the glass substrate with the mask layer, and after the etching is completed, the glass substrate is cleaned.

[0490] In an exemplary embodiment, the etching solution includes, by mass parts: 14 parts of ammonium bifluoride, 4 parts of potassium bifluoride, 40 parts of glycerol, and 40 parts of deionized water. The etching time is 20.5 min, and the etching solution temperature is 21 °C.

[0491] In an exemplary embodiment, after chemical etching, the particle depth on the glass substrate is 12.2 - 18.5 μm, the maximum particle depth is 18.5 μm, and the maximum difference in depth dimensions between particles is 6.3 μm.

[0492] In an exemplary embodiment, a solution with a mass proportion of 5%wt of sodium hydroxide is used to remove the photoresist, and the treatment time is 1 min.

[0493] In an exemplary embodiment, a chromium etching solution is used to remove the metal chromium layer, and the treatment time is 5 min.

[0494] In an exemplary embodiment, the side of the glass substrate from which the mask layer has been removed is chemically polished, and the polishing is stopped when the transmission haze reaches 9.4%.

[0495] In an exemplary embodiment, the polishing liquid comprises, by mass parts: 10 parts of hydrofluoric acid, 10 parts of sulfuric acid, and 68 parts of deionized water. The temperature of the polishing liquid is 30 °C, and the polishing time is 106 min.

[0496] In an exemplary embodiment, the surface particle depth of the anti-glare glass obtained after polishing is 1.3 - 5.7 μm, the maximum difference in the depth dimension between particles is 4.4 μm, the particle diameter is 82.9 - 123.7 μm, and the maximum difference in the diameter dimension between particles is 40.8 μm.

[0497] In an exemplary embodiment, for the anti-glare glass of the embodiment of the present application, the specular gloss at a 60-degree angle is 50.1 GU; the DOI is 1.2%; the haze is 9.4%; the surface roughness is 0.835 μm; there is no flash point; there are no moiré patterns; there are no rainbow patterns.

[0498] In an exemplary embodiment, according to requirements, the mask layer may only include a photosensitive layer, that is, only a photoresist is provided, and the metal chromium layer is not used; it can be understood that when the metal chromium layer is not provided, there is naturally no need to use a chromium etchant to etch the metal chromium layer.

[0499] In an exemplary embodiment, according to requirements, after the chemical etching step is completed and before chemical polishing, the glass substrate can also be cleaned.

[0500] Example 19 In an exemplary embodiment, first, a chromium metal film layer with a thickness of 200 nm is deposited on one side of a clean glass by vacuum evaporation, and then a photoresist layer with a thickness of 2 μm is coated on the surface of the chromium film layer by roll coating.

[0501] In an exemplary embodiment, the chromium metal film layer is deposited by a planar continuous vacuum evaporation machine with a power of 5 KW and a linear speed of 7 mm / s.

[0502] In an exemplary embodiment, then a preset pattern is formed on the surface of the photoresist by exposure and development, and the pattern distribution rules are as follows: a via array formed by irregular arrangement of multiple vias.

[0503] In an exemplary embodiment, the difference in diameter between through-holes with a diameter of 16 - 22 μm within the through-hole array is controlled between 0.5 - 1 μm. For example, the difference in diameter between adjacent through-holes is 1 μm, which can be understood as the diameter change range between adjacent through-holes on the through-hole array being controlled within 1 μm. That is, the through-hole diameters are 16 μm, 17 μm, 18 μm, 19 μm, 20 μm, 21 μm, and 22 μm, and they are normally distributed or approximately normally distributed with 19 μm as the central value. Among them, 16 - 17 μm accounts for about 25%, 18 - 20 μm accounts for about 50%, and 21 - 22 μm accounts for about 25%.

[0504] In an exemplary embodiment, the center distance between adjacent holes on the through-hole array is 95 - 105 μm.

[0505] In an exemplary embodiment, the center distance between adjacent holes on the through-hole array is 95 - 105 μm, that is, the maximum center distance dimension is 105 μm, and the minimum center distance dimension is 95 μm. That is, the center distances are 95 μm, 96 μm, 97 μm, 98 μm, 99 μm, 100 μm, 101 μm, 102 μm, 103 μm, 104 μm, and 105 μm, totaling eleven equal parts, and the quantity proportion within each equal part is the same, that is, each accounts for one-eleventh.

[0506] In an exemplary embodiment, a chromium etching solution is used to transfer the pattern on the photoresist surface to the metal chromium layer, and the corresponding hole pattern array is exposed on the metal chromium layer until the corresponding hole pattern array on the glass substrate is exposed.

[0507] In an exemplary embodiment, the chromium etching solution is composed of ammonium cerium nitrate, glacial acetic acid, and deionized water. Among them, the mass proportion of ammonium cerium nitrate is 16%wt, the mass proportion of glacial acetic acid is 3%wt, and the mass proportion of deionized water is 81%wt. The etching time is 3 min.

[0508] In an exemplary embodiment, an acid-resistant PET protective film is attached to the side of the glass substrate without the mask layer, and a solution with a mass proportion of 3%wt of hydrofluoric acid is used to perform surface activation treatment on the side of the glass substrate with the mask layer by the spraying method. The treatment temperature is 35 °C, and the treatment time is 60 s.

[0509] In an exemplary embodiment, a basic etching solution is used to chemically etch the side of the glass substrate with the mask layer, and the glass substrate is cleaned after etching is completed.

[0510] In an exemplary embodiment, the etching solution includes, by mass parts: 52 parts of sodium hydroxide, 20 parts of glycerol, and 45 parts of deionized water. The etching time is 23.5 min, and the etching solution temperature is 120 °C.

[0511] In an exemplary embodiment, after chemical etching, the particle depth on the glass substrate is 13.7 - 19.6 μm, the maximum particle depth is 19.6 μm, and the maximum difference in depth dimensions between particles is 4.1265.9 μm.

[0512] In an exemplary embodiment, a solution with a 5%wt sodium hydroxide mass ratio is used to remove the photoresist, and the treatment time is 1 min.

[0513] In an exemplary embodiment, a chromium etchant is used to remove the metal chromium layer, and the treatment time is 5 min.

[0514] In an exemplary embodiment, chemical polishing is performed on the side of the glass substrate from which the mask layer has been removed, and the polishing is stopped when the transmission haze reaches 6.2%.

[0515] In an exemplary embodiment, the polishing liquid includes, by mass parts: 55 parts of sodium hydroxide and 43 parts of deionized water. The temperature of the polishing liquid is 118 °C, and the polishing time is 160 min.

[0516] In an exemplary embodiment, the surface particle depth of the anti-glare glass obtained after polishing is 0.5 - 4.6 μm, the maximum difference in depth dimensions between particles is 4.1 μm, the particle diameter is 92.7 - 122.4 μm, and the maximum difference in diameter dimensions between particles is 29.7 μm.

[0517] In an exemplary embodiment, for the anti-glare glass of the embodiment of the present application, the specular gloss at a 60-degree angle is 66.1 GU; the DOI is 0.9%; the haze is 6.2%; the roughness is 0.637 μm; the flash point is none; the moiré pattern is none; the rainbow pattern is none.

[0518] In an exemplary embodiment, as needed, the mask layer may only include a photosensitive layer, that is, only a photoresist is provided without using a metal chromium layer; it can be understood that when the metal chromium layer is not provided, there is naturally no need to use a chromium etchant to etch the metal chromium layer.

[0519] In an exemplary embodiment, as needed, after the chemical etching step is completed and before chemical polishing, the glass substrate may also be cleaned.

[0520] Example 20 In an exemplary embodiment, first, a 200-nm-thick chromium metal film layer is deposited on one side of a clean glass by vacuum evaporation, and then a 2-μm-thick photoresist is coated on the surface of the chromium film layer by roll coating.

[0521] In an exemplary embodiment, the chromium metal film layer is deposited using a planar continuous vacuum evaporation machine with a power of 5 KW and a linear speed of 7 mm / s.

[0522] In an exemplary embodiment, a pattern is preset on the surface of the photoresist by exposure and development, and the pattern distribution rule is as follows: a via array formed by irregular arrangement of a plurality of vias.

[0523] In an exemplary embodiment, the diameter of the vias in the via array is 19 - 25 μm, that is, the difference between the maximum diameter size and the minimum diameter size of the vias is 6 μm. The maximum diameter size of the vias on the mask layer is 25 μm, and the minimum diameter size is 19 μm. The vias are divided into a total of 7 equal parts of 19 μm, 20 μm, 21 μm, 22 μm, 23 μm, 24 μm, and 25 μm according to 19 - 25 μm. The proportion of the number of vias in each equal part in the number on the mask layer is the same. It can be understood that the number of 19 - μm vias is the same as the number of vias of 20 μm, 21 μm, 22 μm, 23 μm, 24 μm, and 25 μm, and each accounts for one-seventh of the total number of vias on the mask layer.

[0524] In an exemplary embodiment, the center distance between adjacent holes in the via array is 90 - 110 μm, that is, the difference between the maximum size and the minimum size of the center distance between adjacent vias is 20 μm.

[0525] In an exemplary embodiment, the center distance between adjacent holes in the via array is 90 - 110 μm, that is, the maximum center distance size is 110 μm, and the minimum center distance size is 90 μm. That is, the center distance is divided into a total of eleven equal parts of 90 μm, 92 μm, 94 μm, 96 μm, 98 μm, 100 μm, 102 μm, 104 μm, 106 μm, 108 μm, and 110 μm. The proportion of the number in each equal part is the same, that is, each accounts for one-eleventh.

[0526] In an exemplary embodiment, a chromium etching solution is used to transfer the pattern on the surface of the photoresist to the metal chromium layer, and the corresponding hole pattern array is exposed on the metal chromium layer until the corresponding hole pattern array of the glass substrate is exposed.

[0527] In an exemplary embodiment, the chromium etching solution is composed of ammonium cerium nitrate, glacial acetic acid, and deionized water, wherein the mass proportion of ammonium cerium nitrate is 16%wt, the mass proportion of glacial acetic acid is 3%wt, and the mass proportion of deionized water is 81%wt. The etching time is 3 min.

[0528] In an exemplary embodiment, an acid-resistant PET protective film is attached to the side of the glass substrate without the mask layer, and a solution with a mass proportion of 3%wt of hydrofluoric acid is used to perform surface activation treatment on the side of the glass substrate with the mask layer by the spraying method. The treatment temperature is 35°C, and the treatment time is 60 s.

[0529] In an exemplary embodiment, a fluorine-containing acidic etching solution is used to chemically etch the glass substrate on the side with the mask layer, and after the etching is completed, the glass substrate is cleaned.

[0530] In an exemplary embodiment, the etching solution includes, by mass parts: 14 parts of ammonium bifluoride, 4 parts of potassium bifluoride, 35 parts of glycerol, and 35 parts of deionized water. The etching time is 22.5 min, and the temperature of the etching solution is 20 °C.

[0531] In an exemplary embodiment, after chemical etching, the particle depth on the glass substrate is 13.3 - 19.6 μm, the maximum particle depth is 19.6 μm, and the maximum difference in depth dimensions between particles is 6.3 μm.

[0532] In an exemplary embodiment, a solution with a 5%wt sodium hydroxide mass ratio is used to remove the photoresist, and the treatment time is 1 min.

[0533] In an exemplary embodiment, a chromium etching solution is used to remove the metal chromium layer, and the treatment time is 5 min.

[0534] In an exemplary embodiment, the glass substrate on the side where the mask layer is removed is chemically polished and stopped when the transmission haze reaches 33.1%.

[0535] In an exemplary embodiment, the polishing solution includes, by mass parts: 58 parts of sodium hydroxide and 43 parts of deionized water. The temperature of the polishing solution is 120 °C, and the polishing time is 131 min.

[0536] In an exemplary embodiment, the surface particle depth of the antiglare glass obtained after polishing is 2.8 - 8.9 μm, the maximum difference in depth dimensions between particles is 6.1 μm, the particle diameter is 81.3 - 128.3 μm, and the maximum difference in diameter dimensions between particles is 47 μm.

[0537] In an exemplary embodiment, for the antiglare glass of the embodiment of the present application, the specular gloss at a 60-degree angle: 20.5 GU; DOI: 0.7%; haze: 33.1%; roughness: 1.421 μm; flash point: none; moiré pattern: none; rainbow pattern: none.

[0538] In an exemplary embodiment, as needed, the mask layer may only include a photosensitive layer, that is, only a photoresist is provided without using a metal chromium layer; it can be understood that when the metal chromium layer is not provided, there is naturally no need to use a chromium etching solution to etch the metal chromium layer.

[0539] In an exemplary embodiment, as needed, after the chemical etching step is completed and before chemical polishing, cleaning of the glass substrate may also be included.

[0540] Example 21 In an exemplary embodiment, first, a chromium metal film layer with a thickness of 200 nm is deposited on one side of a clean glass by vacuum evaporation, and then a layer of photoresist with a thickness of 2 μm is coated on the surface of the chromium film by roll coating.

[0541] In an exemplary embodiment, the chromium metal film layer is deposited by a planar continuous vacuum evaporation machine with a power of 5 KW and a linear speed of 7 mm / s.

[0542] In an exemplary embodiment, then a preset pattern is formed on the surface of the photoresist by exposure and development, and the pattern distribution rules are as follows: a via array formed by irregular arrangement of multiple vias.

[0543] In an exemplary embodiment, the difference in diameter between the vias in the via array with a diameter of 19 - 25 μm is controlled between 0.5 - 1 μm. For example, the difference in diameter between adjacent vias is 1 μm. It can be understood that the variation range of the diameter between adjacent vias on the via array is controlled within 1 μm, that is, the via diameters are 19 μm, 20 μm, 21 μm, 22 μm, 23 μm, 24 μm, and 25 μm, and are normally distributed or approximately normally distributed with 22 μm as the central value. Among them, the proportion of vias with a diameter of 19 - 20 μm is about 25%, the proportion of vias with a diameter of 21 - 23 μm is about 50%, and the proportion of vias with a diameter of 24 - 25 μm is about 25%.

[0544] In an exemplary embodiment, the center distance between adjacent holes on the via array is 100 - 120 μm, that is, the difference between the maximum and minimum center distances of adjacent vias is 20 μm.

[0545] In an exemplary embodiment, the center distance between adjacent vias on the via array is 100 - 120 μm, that is, the maximum center distance size is 120 μm, the minimum center distance size is 100 μm, and the center distances are 100 μm, 102 μm, 104 μm, 106 μm, 108 μm, 110 μm, 112 μm, 114 μm, 116 μm, 118 μm, and 120 μm. It can be understood that the value gradient of the center distance is 2 μm, and it is normally distributed or approximately normally distributed with 110 μm as the central value. Among them, the proportion of center distance sizes of 100 - 104 μm is 25%, the proportion of center distance sizes of 106 - 114 μm is 50%, and the proportion of center distance sizes of 116 - 120 μm is 25%.

[0546] In an exemplary embodiment, a chromium etchant is used to transfer the pattern on the surface of the photoresist to the metal chromium layer, and the corresponding hole pattern array is exposed on the metal chromium layer until the corresponding hole pattern array is exposed on the glass substrate.

[0547] In an exemplary embodiment, the chromium etching solution is composed of ammonium cerium nitrate, glacial acetic acid, and deionized water, wherein the mass proportion of ammonium cerium nitrate is 16%wt, the mass proportion of glacial acetic acid is 3%wt, and the mass proportion of deionized water is 81%wt. The etching time is 3 minutes.

[0548] In an exemplary embodiment, an acid-resistant PET protective film is attached to the side of the glass substrate without the mask layer, and a hydrofluoric acid solution with a mass percentage of 3% by weight is sprayed to activate the surface of the glass substrate with the mask layer at a treatment temperature of 35° C. for 60 seconds.

[0549] In an exemplary embodiment, an alkaline etching solution is used to chemically etch the glass substrate on the side with the mask layer, and the glass substrate is cleaned after the etching is completed.

[0550] In an exemplary embodiment, the etching solution includes, by weight, 55 parts of sodium hydroxide, 3 parts of glycerol, and 45 parts of deionized water. The etching time is 23 minutes, and the etching solution temperature is 115°C.

[0551] In an exemplary embodiment, after chemical etching, the depth of the particles on the glass substrate is 11.8-18.9 μm, the maximum particle depth is 18.9 μm, and the maximum difference in depth size between particles is 7.1 μm.

[0552] In an exemplary embodiment, a solution containing 5% by weight of sodium hydroxide is used to remove the photoresist, and the treatment time is 1 minute.

[0553] In an exemplary embodiment, a chromium etching solution is used to remove the metal chromium layer, and the processing time is 5 minutes.

[0554] In an exemplary embodiment, the glass substrate on the side where the mask layer is removed is chemically polished, and the polishing is stopped when the transmission haze reaches 58.1%.

[0555] In an exemplary embodiment, the polishing liquid includes, by weight, 58 parts of sodium hydroxide and 43 parts of deionized water. The temperature of the polishing liquid is 125° C., and the polishing time is 97 minutes.

[0556] In an exemplary embodiment, the surface particle depth of the anti-glare glass obtained after polishing is 3.3-9.9 μm, the maximum difference in depth between particles is 6.6 μm, the particle diameter is 95.7-125.7 μm, and the maximum difference in diameter between particles is 30 μm.

[0557] In an exemplary embodiment, for the anti-glare glass of the embodiments of the present application, the specular gloss at a 60-degree angle is 16.2 GU; the DOI is 0.1%; the haze is 58.1%; the surface roughness is 1.661 μm; there is no flash point; there is no moiré pattern; there is no rainbow pattern.

[0558] In an exemplary embodiment, as needed, the mask layer may only include a photosensitive layer, that is, only a photoresist is provided without using a metal chromium layer; it can be understood that when the metal chromium layer is not provided, there is naturally no need to use a chromium etchant to etch the metal chromium layer.

[0559] In an exemplary embodiment, as needed, after the chemical etching step is completed and before chemical polishing, cleaning of the glass substrate may also be included.

[0560] Example 22 In an exemplary embodiment, first, a 200-nm-thick chromium metal film layer is deposited on one side of a clean glass by vacuum evaporation, and then a 2-μm-thick photoresist is coated on the surface of the chromium film layer by roll coating.

[0561] In an exemplary embodiment, the chromium metal film layer is deposited by a planar continuous vacuum evaporation machine with a power of 5 KW and a linear speed of 7 mm / s.

[0562] In an exemplary embodiment, then a preset pattern is formed on the surface of the photoresist by exposure and development, and the pattern distribution rules are as follows: a via array formed by irregular arrangement of a plurality of vias.

[0563] In an exemplary embodiment, the diameter of the vias in the via array is 26-34 μm, that is, the difference between the maximum diameter size and the minimum diameter size of the vias is 8 μm. The maximum diameter size of the vias on the mask layer is 34 μm, and the minimum diameter size is 26 μm. The vias are divided into a total of 9 equal parts of 26 μm, 27 μm, 28 μm, 29 μm, 30 μm, 31 μm, 32 μm, 33 μm, and 34 μm according to 26-34 μm. The proportion of the number of vias in each equal part on the mask layer is the same. It can be understood that the number of 26-μm vias is the same as the number of 27-μm, 28-μm, 29-μm, 30-μm, 31-μm, 32-μm, 33-μm, and 34-μm vias, and each accounts for one-ninth of the total number of vias on the mask layer.

[0564] In an exemplary embodiment, the center distance between adjacent holes in the via array is 105-120 μm, that is, the difference between the maximum size and the minimum size of the center distance between adjacent vias is 15 μm.

[0565] In an exemplary embodiment, the center distance between adjacent holes on the via hole array is 105 - 120 μm, that is, the maximum center distance dimension is 120 μm, and the minimum center distance dimension is 105 μm. That is, the center distances are divided into six equal parts: 105 μm, 108 μm, 111 μm, 114 μm, 117 μm, and 120 μm. The quantity proportion within each equal part is the same, that is, each accounts for one-sixth.

[0566] In an exemplary embodiment, a chromium etching solution is used to transfer the pattern on the photoresist surface to the metal chromium layer, and the corresponding hole pattern array is exposed on the metal chromium layer until the corresponding hole pattern array on the glass substrate is exposed.

[0567] In an exemplary embodiment, the chromium etching solution is composed of ammonium cerium nitrate, glacial acetic acid, and deionized water, wherein the mass proportion of ammonium cerium nitrate is 16%wt, the mass proportion of glacial acetic acid is 3%wt, and the mass proportion of deionized water is 81%wt. The etching time is 3 min.

[0568] In an exemplary embodiment, an acid-resistant PET protective film is attached to the side of the glass substrate without a mask layer, and a solution with a mass proportion of 3%wt of hydrofluoric acid is used to perform surface activation treatment on the side of the glass substrate with a mask layer by the spraying method. The treatment temperature is 35 °C, and the treatment time is 60 s.

[0569] In an exemplary embodiment, an alkaline etching solution is used to chemically etch the side of the glass substrate with a mask layer, and after the etching is completed, the glass substrate is cleaned.

[0570] In an exemplary embodiment, the etching solution includes, by mass parts: 55 parts of sodium hydroxide, 25 parts of glycerol, and 45 parts of deionized water. The etching time is 21 min, and the temperature of the etching solution is 124 °C.

[0571] In an exemplary embodiment, after chemical etching, the particle depth on the glass substrate is 10.1 - 19.5 μm, the maximum particle depth is 19.5 μm, and the maximum difference in depth dimensions between particles is 9.4 μm.

[0572] In an exemplary embodiment, a solution with a mass proportion of 5%wt of sodium hydroxide is used to remove the photoresist, and the treatment time is 1 min.

[0573] In an exemplary embodiment, a chromium etching solution is used to remove the metal chromium layer, and the treatment time is 5 min.

[0574] In an exemplary embodiment, the side of the glass substrate from which the mask layer has been removed is chemically polished until the transmission haze reaches 49.4% and then stopped.

[0575] In an exemplary embodiment, the polishing liquid comprises, by mass parts: 58 parts of sodium hydroxide and 43 parts of deionized water. The temperature of the polishing liquid is 119 °C, and the polishing time is 135 min.

[0576] In an exemplary embodiment, the surface particle depth of the anti-glare glass obtained after polishing is 3.9 - 11.4 μm, the maximum difference in depth dimensions between particles is 7.5 μm, the particle diameter is 102.7 - 129.6 μm, and the maximum difference in diameter dimensions between particles is 26.9 μm.

[0577] In an exemplary embodiment, for the anti-glare glass of the embodiment of the present application, the specular gloss at a 60-degree angle is 16.3 GU; the DOI is 0.2%; the haze is 49.4%; the surface roughness is 1.981 μm; there is no flash point; there is no moiré pattern; there is no rainbow pattern.

[0578] In an exemplary embodiment, according to requirements, the mask layer may only include a photosensitive layer, that is, only a photoresist is provided without using a metal chromium layer; it can be understood that when the metal chromium layer is not provided, there is naturally no need to use a chromium etchant to etch the metal chromium layer.

[0579] In an exemplary embodiment, according to requirements, after the chemical etching step is completed and before chemical polishing, the glass substrate can also be cleaned.

[0580] Example 23 In an exemplary embodiment, first, a chromium metal film layer with a thickness of 200 nm is deposited on one side of a clean glass by vacuum evaporation, and then a photoresist layer with a thickness of 2 μm is coated on the surface of the chromium film layer by roll coating.

[0581] In an exemplary embodiment, the chromium metal film layer is deposited by a planar continuous vacuum evaporation machine with a power of 5 KW and a linear speed of 7 mm / s.

[0582] In an exemplary embodiment, then a preset pattern is formed on the surface of the photoresist by exposure and development. The pattern distribution rule is as follows: a via array formed by irregular arrangement of multiple vias.

[0583] In an exemplary embodiment, the difference in diameter between through-holes with a diameter of 26 - 34 μm within the through-hole array is controlled between 0.5 - 1 μm. For example, the difference in diameter between adjacent through-holes is 1 μm. It can be understood that the variation range of the diameter between adjacent through-holes on the through-hole array is controlled within 1 μm, that is, the through-hole diameters are 26 μm, 27 μm, 28 μm, 29 μm, 30 μm, 31 μm, 32 μm, 33 μm, and 34 μm, and are normally distributed or approximately normally distributed with 30 μm as the central value, where 26 - 28 μm accounts for approximately 33%, 29 - 31 μm accounts for approximately 34%, and 32 - 34 μm accounts for approximately 33%.

[0584] In an exemplary embodiment, the center distance between adjacent holes on the through-hole array is 105 - 120 μm, that is, the difference between the maximum and minimum center distances of adjacent through-holes is 15 μm.

[0585] In an exemplary embodiment, the center distance between adjacent through-holes on the through-hole array is 105 - 120 μm, that is, the maximum center distance dimension is 120 μm, the minimum center distance dimension is 105 μm, and the center distances are 105 μm, 106 μm, 107 μm, 108 μm, 109 μm, 110 μm, 111 μm, 112 μm, 113 μm, 114 μm, and 115 μm. It can be understood that the value gradient of the center distance is 1 μm, and it is normally distributed or approximately normally distributed with 110 μm as the central value, where 105 - 107 μm accounts for 25%, 108 - 112 μm accounts for 50%, and 113 - 115 μm accounts for 25%.

[0586] In an exemplary embodiment, a chromium etchant is used to transfer the pattern on the photoresist surface to the metal chromium layer, and the corresponding hole pattern array is exposed on the metal chromium layer until the corresponding hole pattern array of the glass substrate is exposed.

[0587] In an exemplary embodiment, the chromium etchant is composed of ammonium cerium nitrate, glacial acetic acid, and deionized water, where the mass ratio of ammonium cerium nitrate is 16%wt, the mass ratio of glacial acetic acid is 3%wt, and the mass ratio of deionized water is 81%wt. The etching time is 3 minutes.

[0588] In an exemplary embodiment, an acid-resistant PET protective film is attached to the side of the glass substrate without a mask layer, and a solution with a mass ratio of hydrofluoric acid of 3%wt is used to perform surface activation treatment on the side of the glass substrate with a mask layer by the spraying method. The treatment temperature is 35°C, and the treatment time is 60 seconds.

[0589] In an exemplary embodiment, a fluorine-containing acidic etchant is used to chemically etch the side of the glass substrate with a mask layer, and the glass substrate is cleaned after etching is completed.

[0590] In an exemplary embodiment, the etching solution includes, by mass parts: 14 parts of ammonium bifluoride, 4 parts of potassium bifluoride, 35 parts of glycerol, and 35 parts of deionized water. The etching time is 24 min, and the temperature of the etching solution is 21°C.

[0591] In an exemplary embodiment, after chemical etching, the particle depth on the glass substrate is 11.3 - 19.9 μm, the maximum particle depth is 19.9 μm, and the maximum difference in depth dimensions between particles is 8.6 μm.

[0592] In an exemplary embodiment, a solution with a 5%wt sodium hydroxide mass ratio is used to remove the photoresist, and the treatment time is 1 min.

[0593] In an exemplary embodiment, a chromium etching solution is used to remove the metal chromium layer, and the treatment time is 5 min.

[0594] In an exemplary embodiment, chemical polishing is performed on the side of the glass substrate from which the mask layer has been removed, and the polishing is stopped when the transmission haze reaches 22.3%.

[0595] In an exemplary embodiment, the polishing solution includes, by mass parts: 12 parts of hydrofluoric acid, 12 parts of sulfuric acid, and 65 parts of deionized water. The temperature of the polishing solution is 31°C, and the polishing time is 173 min.

[0596] In an exemplary embodiment, the surface particle depth of the anti-glare glass obtained after polishing is 3.2 - 9.7 μm, the maximum difference in depth dimensions between particles is 6.5 μm, the particle diameter is 102.7 - 136.7 μm, and the maximum difference in diameter dimensions between particles is 35 μm.

[0597] In an exemplary embodiment, for the anti-glare glass of the embodiment of the present application, the specular gloss at a 60-degree angle is 26.2 GU; the distinctness of image is 0.6%; the haze is 22.3%; the surface roughness is 1.637 μm; there is no flash point; there are no moiré patterns; there are no rainbow patterns.

[0598] In an exemplary embodiment, as needed, the mask layer may only include a photosensitive layer, that is, only a photoresist is provided without using a metal chromium layer; it can be understood that when the metal chromium layer is not provided, there is naturally no need to use a chromium etching solution to etch the metal chromium layer.

[0599] In an exemplary embodiment, as needed, after the chemical etching step is completed and before chemical polishing, the glass substrate can also be washed.

[0600] Example 24 In an exemplary embodiment, first, a chromium metal film layer with a thickness of 200 nm is deposited on one side of a clean glass by vacuum evaporation, and then a photoresist layer with a thickness of 2 μm is coated on the surface of the chromium film layer by roll coating.

[0601] In an exemplary embodiment, the chromium metal film layer is deposited by a planar continuous vacuum evaporation machine with a power of 5 KW and a linear speed of 7 mm / s.

[0602] In an exemplary embodiment, then a preset pattern is formed on the surface of the photoresist by exposure and development, and the pattern distribution rules are as follows: a via array formed by irregularly arranging a plurality of vias.

[0603] In an exemplary embodiment, the diameter of the vias in the via array is 40 - 50 μm, that is, the difference between the maximum diameter size and the minimum diameter size of the vias is 10 μm. The maximum diameter size of the vias on the mask layer is 50 μm, and the minimum diameter size is 40 μm. The vias are divided into a total of 6 equal parts of 40 μm, 42 μm, 44 μm, 46 μm, 48 μm, and 50 μm according to 40 - 50 μm. The number of vias in each equal part accounts for the same proportion on the mask layer. It can be understood that the number of 40 - μm vias is the same as the number of vias of 42 μm, 44 μm, 46 μm, 48 μm, and 50 μm, and each accounts for one-sixth of the total number of vias on the mask layer.

[0604] In an exemplary embodiment, the center distance between adjacent holes in the via array is 110 - 120 μm, that is, the difference between the maximum size and the minimum size of the center distance between adjacent vias is 10 μm.

[0605] In an exemplary embodiment, the center distance between adjacent holes in the via array is 110 - 120 μm, that is, the maximum center distance size is 120 μm, and the minimum center distance size is 110 μm. That is, the center distance is divided into a total of 11 equal parts of 110 μm, 111 μm, 112 μm, 113 μm, 114 μm, 115 μm, 116 μm, 117 μm, 118 μm, 119 μm, and 120 μm. The number of each equal part accounts for the same proportion, that is, each accounts for one-eleventh.

[0606] In an exemplary embodiment, a chromium etchant is used to transfer the pattern on the surface of the photoresist to the metal chromium layer, and the corresponding hole pattern array is exposed on the metal chromium layer until the corresponding hole pattern array of the glass substrate is exposed.

[0607] In an exemplary embodiment, the chromium etchant is composed of ammonium cerium nitrate, glacial acetic acid, and deionized water. Among them, the mass ratio of ammonium cerium nitrate is 16%wt, the mass ratio of glacial acetic acid is 3%wt, and the mass ratio of deionized water is 81%wt. The etching time is 3 min.

[0608] In an exemplary embodiment, an acid-resistant PET protective film is attached to the side of the glass substrate without a mask layer, and a solution with a mass ratio of hydrofluoric acid of 3%wt is used to perform surface activation treatment on the side of the glass substrate with a mask layer by the spraying method, with a treatment temperature of 35°C and a treatment time of 60 s.

[0609] In an exemplary embodiment, a chemical etching is performed on the side of the glass substrate with a mask layer using an etching solution, and after the etching is completed, the glass substrate is cleaned.

[0610] In an exemplary embodiment, the etching solution includes, by mass parts: 14 parts of ammonium bifluoride, 4 parts of potassium bifluoride, 35 parts of glycerol, and 35 parts of deionized water, with an etching time of 22 min and an etching solution temperature of 21°C.

[0611] In an exemplary embodiment, after the chemical etching, the particle depth on the glass substrate is 8.4 - 19.4 μm, the maximum particle depth is 19.4 μm, and the maximum difference in depth dimensions between particles is 11 μm.

[0612] In an exemplary embodiment, a solution with a mass ratio of sodium hydroxide of 5%wt is used to remove the photoresist, with a treatment time of 1 min.

[0613] In an exemplary embodiment, a chromium etching solution is used to remove the metal chromium layer, with a treatment time of 5 min.

[0614] In an exemplary embodiment, chemical polishing is performed on the side of the glass substrate from which the mask layer has been removed, and the polishing is stopped when the transmission haze reaches 5.7%.

[0615] In an exemplary embodiment, the polishing solution includes, by mass parts: 12 parts of hydrofluoric acid, 10 parts of sulfuric acid, and 68 parts of deionized water, with a polishing solution temperature of 31°C and a polishing time of 195 min.

[0616] In an exemplary embodiment, the surface particle depth of the anti-glare glass obtained after polishing is 0.9 - 5.7 μm, the maximum difference in depth dimensions between particles is 4.8 μm, the particle diameter is 78.6 - 148.6 μm, and the maximum difference in diameter dimensions between particles is 70 μm.

[0617] In an exemplary embodiment, for the anti-glare glass of the embodiment of the present application, the specular gloss at a 60-degree angle: 68.7 GU; DOI: 0.5%; haze: 5.7%; roughness: 1.317 μm; flash point: none; moiré pattern: none; rainbow pattern: none.

[0618] In an exemplary embodiment, if necessary, the mask layer may only include a photosensitive layer, that is, only a photoresist is provided without using a metal chromium layer; it can be understood that when the metal chromium layer is not provided, there is naturally no need to use a chromium etching solution to etch the metal chromium layer.

[0619] In an exemplary embodiment, if necessary, after the chemical etching step is completed and before chemical polishing, cleaning of the glass substrate may also be included.

[0620] Example 25 In an exemplary embodiment, first, a chromium metal film layer with a thickness of 200 nm is deposited on one side of a clean glass by vacuum evaporation, and then a photoresist layer with a thickness of 2 μm is coated on the surface of the chromium film layer by roll coating.

[0621] In an exemplary embodiment, the chromium metal film layer is deposited by a planar continuous vacuum evaporation machine with a power of 5 KW and a linear velocity of 7 mm / s.

[0622] In an exemplary embodiment, then a preset pattern is formed on the surface of the photoresist by exposure and development, and the pattern distribution rules are as follows: a via array formed by irregular arrangement of a plurality of vias.

[0623] In an exemplary embodiment, the diameter of the vias in the via array is 40 - 50 μm, that is, the difference between the maximum diameter size and the minimum diameter size of the vias is 10 μm. The maximum diameter size of the vias on the mask layer is 50 μm, and the minimum diameter size is 40 μm. The vias are divided into 11 equal parts of 40 μm, 41 μm, 42 μm, 43 μm, 44 μm, 45 μm, 46 μm, 47 μm, 48 μm, 49 μm, and 50 μm according to 40 - 50 μm. The number of vias in each equal part accounts for the same proportion on the mask layer. It can be understood that the number of 40 - μm vias is the same as the number of 41 - μm, 42 - μm, 43 - μm, 44 - μm, 45 - μm, 46 - μm, 47 - μm, 48 - μm, 49 - μm, and 50 - μm vias, and each accounts for one-eleventh of the total number of vias on the mask layer.

[0624] In an exemplary embodiment, the center distance between adjacent holes in the via array is 110 - 120 μm, that is, the difference between the maximum size and the minimum size of the center distance between adjacent vias is 10 μm.

[0625] In an exemplary embodiment, the center distance between adjacent holes on the via hole array is 110 - 120 μm, that is, the maximum center distance dimension is 120 μm, the minimum center distance dimension is 110 μm. The center distances are 110 μm, 111 μm, 112 μm, 113 μm, 114 μm, 115 μm, 116 μm, 117 μm, 118 μm, 119 μm, and 120 μm. It can be understood that the value gradient of the center distance is 1 μm, and it is normally distributed or approximately normally distributed with 115 μm as the central value. Among them, the proportion of 110 - 112 μm is 25%, the proportion of 113 - 117 μm is 50%, and the proportion of 118 - 120 μm is 25%.

[0626] In an exemplary embodiment, a photoresist surface pattern is transferred onto a metal chromium layer using a chromium etching solution, and the corresponding hole pattern array is exposed on the metal chromium layer until the corresponding hole pattern array of the glass substrate is exposed.

[0627] In an exemplary embodiment, the chromium etching solution is composed of ammonium cerium nitrate, glacial acetic acid, and deionized water, where the mass proportion of ammonium cerium nitrate is 16%wt, the mass proportion of glacial acetic acid is 3%wt, and the mass proportion of deionized water is 81%wt. The etching time is 3 min.

[0628] In an exemplary embodiment, an acid-resistant PET protective film is attached to the side of the glass substrate without a mask layer, and a solution with a mass proportion of 3%wt of hydrofluoric acid is used to perform surface activation treatment on the side of the glass substrate with a mask layer by the spray method. The treatment temperature is 35°C, and the treatment time is 60 s.

[0629] In an exemplary embodiment, a fluorine-containing acidic etching solution is used to chemically etch the side of the glass substrate with a mask layer, and after the etching is completed, the glass substrate is cleaned.

[0630] In an exemplary embodiment, the etching solution includes, by mass parts: 60 parts of sodium hydroxide, 20 parts of glycerol, and 40 parts of deionized water. The etching time is 21 min, and the temperature of the etching solution is 120°C.

[0631] In an exemplary embodiment, after chemical etching, the particle depth on the glass substrate is 8.6 - 19.2 μm, the maximum particle depth is 19.2 μm, and the maximum difference in depth dimensions between particles is 10.6 μm.

[0632] In an exemplary embodiment, a solution with a mass proportion of 5%wt of sodium hydroxide is used to remove the photoresist, and the treatment time is 1 min.

[0633] In an exemplary embodiment, a chromium etching solution is used to remove the metal chromium layer, and the treatment time is 5 min.

[0634] In an exemplary embodiment, the glass substrate on the side where the mask layer is removed is chemically polished and the polishing is stopped when the transmission haze reaches 22.3%.

[0635] In an exemplary embodiment, the polishing liquid includes, by mass parts: 60 parts of sodium hydroxide and 40 parts of deionized water. The temperature of the polishing liquid is 122 °C and the polishing time is 160 min.

[0636] In an exemplary embodiment, the surface particle depth of the anti-glare glass obtained after polishing is 2.4 - 9.7 μm, the maximum difference in depth dimensions between particles is 7.3 μm, the particle diameter is 109.8 - 149.7 μm, and the maximum difference in diameter dimensions between particles is 39.9 μm.

[0637] In an exemplary embodiment, for the anti-glare glass of the embodiment of the present application, the specular gloss at a 60-degree angle is 26.7 GU; the DOI is 0.6%; the haze is 22.4%; the surface roughness is 1.637 μm; there is no flash point; there is no moiré pattern; there is no rainbow pattern.

[0638] In an exemplary embodiment, if needed, the mask layer may only include a photosensitive layer, that is, only a photoresist is provided without using a metal chromium layer; it can be understood that when the metal chromium layer is not provided, there is naturally no need to use a chromium etchant to etch the metal chromium layer.

[0639] In an exemplary embodiment, if needed, after the chemical etching step and before the chemical polishing, the glass substrate may also be cleaned.

[0640] Example 26 In an exemplary embodiment, first, a chromium metal film layer with a thickness of 200 nm is deposited on one side of a clean glass by vacuum evaporation, and then a photoresist layer with a thickness of 2 μm is coated on the surface of the chromium film layer by roll coating.

[0641] In an exemplary embodiment, the chromium metal film layer is deposited by a planar continuous vacuum evaporation machine with a power of 5 KW and a linear speed of 7 mm / s.

[0642] In an exemplary embodiment, then a preset pattern is formed on the surface of the photoresist by exposure and development. The pattern distribution rule is as follows: a via array formed by irregular arrangement of multiple vias.

[0643] In an exemplary embodiment, the difference in diameter between through-holes within the through-hole array, where the diameters of the through-holes are between 40 - 50 μm, is controlled within 0.5 - 1 μm. For example, the difference in diameter between adjacent through-holes is 1 μm. It can be understood that the variation range of the diameters between adjacent through-holes on the through-hole array is controlled within 1 μm, that is, the through-hole diameters are 40 μm, 41 μm, 42 μm, 43 μm, 44 μm, 45 μm, 46 μm, 47 μm, 48 μm, 49 μm, and 50 μm, and they are normally distributed or approximately normally distributed with 45 μm as the central value, where 40 - 42 μm accounts for about 30%, 43 - 47 μm accounts for about 40%, and 48 - 50 μm accounts for about 30%.

[0644] In an exemplary embodiment, the center distance between adjacent holes on the through-hole array is 100 - 120 μm, that is, the difference between the maximum and minimum dimensions of the center distance between adjacent through-holes is 20 μm.

[0645] In an exemplary embodiment, the center distance between adjacent through-holes on the through-hole array is 100 - 120 μm, that is, the maximum center distance dimension is 120 μm, and the minimum center distance dimension is 100 μm. That is, the center distances are 100 μm, 104 μm, 108 μm, 112 μm, 116 μm, and 120 μm, a total of six equal parts, and the quantity proportion within each equal part is the same, that is, each accounts for one-sixth.

[0646] In an exemplary embodiment, a chromium etchant is used to transfer the pattern on the photoresist surface to the metal chromium layer, and the corresponding hole pattern array is exposed on the metal chromium layer until the corresponding hole pattern array of the glass substrate is exposed.

[0647] In an exemplary embodiment, the chromium etchant is composed of ammonium cerium nitrate, glacial acetic acid, and deionized water, where the mass proportion of ammonium cerium nitrate is 16%wt, the mass proportion of glacial acetic acid is 3%wt, and the mass proportion of deionized water is 81%wt. The etching time is 3 minutes.

[0648] In an exemplary embodiment, an acid-resistant PET protective film is attached to the side of the glass substrate without a mask layer, and a solution with a mass proportion of 3%wt of hydrofluoric acid is used to perform surface activation treatment on the side of the glass substrate with a mask layer by the spraying method. The treatment temperature is 35°C, and the treatment time is 60 s.

[0649] In an exemplary embodiment, an etchant is used to chemically etch the side of the glass substrate with a mask layer, and after the etching is completed, the glass substrate is cleaned.

[0650] In an exemplary embodiment, the etching solution includes, by mass parts: 15 parts of ammonium bifluoride, 5 parts of potassium bifluoride, 30 parts of glycerol, and 30 parts of deionized water. The etching time is 25 min, and the temperature of the etching solution is 22 °C.

[0651] In an exemplary embodiment, after chemical etching, the particle depth on the glass substrate is 15.6 - 25.3 μm, the maximum particle depth is 25.3 μm, and the maximum difference in depth dimensions between particles is 9.7 μm.

[0652] In an exemplary embodiment, a solution with a 5%wt sodium hydroxide mass ratio is used to remove the photoresist, and the treatment time is 1 min.

[0653] In an exemplary embodiment, a chromium etching solution is used to remove the metal chromium layer, and the treatment time is 5 min.

[0654] In an exemplary embodiment, chemical polishing is performed on the side of the glass substrate from which the mask layer has been removed, and the polishing is stopped when the transmission haze reaches 75.3%.

[0655] In an exemplary embodiment, the polishing solution includes, by mass parts: 12 parts of hydrofluoric acid, 12 parts of sulfuric acid, and 60 parts of deionized water. The temperature of the polishing solution is 33 °C, and the polishing time is 59 min.

[0656] In an exemplary embodiment, the surface particle depth of the anti-glare glass obtained after polishing is 5.3 - 15 μm, the maximum difference in depth dimensions between particles is 9.7 μm, the particle diameter is 95.7 - 138.4 μm, and the maximum difference in diameter dimensions between particles is 42.7 μm.

[0657] In an exemplary embodiment, for the anti-glare glass of the embodiment of the present application, the specular gloss at a 60-degree angle is 15.9 GU; the DOI is 0.1%; the haze is 75.3%; the surface roughness is 2.634 μm; there is no flash point; there is no moiré pattern; there is no rainbow pattern.

[0658] In an exemplary embodiment, according to requirements, the mask layer may only include a photosensitive layer, that is, only a photoresist is provided without using a metal chromium layer; it can be understood that when the metal chromium layer is not provided, there is naturally no need to use a chromium etching solution to etch the metal chromium layer.

[0659] In an exemplary embodiment, according to requirements, after the chemical etching step is completed and before chemical polishing, the glass substrate may also be cleaned.

[0660] Example 27 In an exemplary embodiment, first, a chromium metal film layer with a thickness of 200 nm is deposited on one side of a clean glass by vacuum evaporation, and then a photoresist layer with a thickness of 2 μm is coated on the surface of the chromium film layer by roll coating.

[0661] In an exemplary embodiment, the chromium metal film layer is deposited by a planar continuous vacuum evaporation machine with a power of 5 KW and a linear velocity of 7 mm / s.

[0662] In an exemplary embodiment, then a preset pattern is formed on the surface of the photoresist by exposure and development, and the pattern distribution rules are as follows: a via array formed by irregular arrangement of multiple vias.

[0663] In an exemplary embodiment, the diameter of the vias in the via array is 40 - 50 μm, that is, the difference between the maximum diameter size and the minimum diameter size of the vias is 10 μm. The maximum diameter size of the vias on the mask layer is 50 μm, and the minimum diameter size is 40 μm. The vias are divided into 11 equal parts of 40 μm, 41 μm, 42 μm, 43 μm, 44 μm, 45 μm, 46 μm, 47 μm, 48 μm, 49 μm, and 50 μm according to 40 - 50 μm. The number of vias in each equal part accounts for the same proportion on the mask layer. It can be understood that the number of 40 - μm vias is the same as that of 41 μm, 42 μm, 43 μm, 44 μm, 45 μm, 46 μm, 47 μm, 48 μm, 49 μm, and 50 - μm vias, and each accounts for one - eleventh of the total number of vias on the mask layer.

[0664] In an exemplary embodiment, the center - to - center distance between adjacent holes in the via array is 100 - 120 μm, that is, the difference between the maximum size and the minimum size of the center - to - center distance between adjacent vias is 20 μm.

[0665] In an exemplary embodiment, the center - to - center distance between adjacent holes in the via array is 100 - 120 μm, that is, the maximum center - to - center distance size is 120 μm, and the minimum center - to - center distance size is 100 μm. The center - to - center distance is divided into five equal parts of 100 μm, 105 μm, 110 μm, 115 μm, and 120 μm, and the number in each equal part accounts for the same proportion, that is, each accounts for one - fifth.

[0666] In an exemplary embodiment, a chromium etching solution is used to transfer the pattern on the surface of the photoresist to the metal chromium layer, and the corresponding hole - type array pattern is exposed on the metal chromium layer until the corresponding hole - type array pattern of the glass substrate is exposed.

[0667] In an exemplary embodiment, the chromium etching solution is composed of ammonium cerium nitrate, glacial acetic acid, and deionized water, wherein the mass proportion of ammonium cerium nitrate is 16%wt, the mass proportion of glacial acetic acid is 3%wt, and the mass proportion of deionized water is 81%wt. The etching time is 3 minutes.

[0668] In an exemplary embodiment, an acid-resistant PET protective film is attached to the side of the glass substrate without the mask layer, and a hydrofluoric acid solution with a mass percentage of 3% by weight is sprayed to activate the surface of the glass substrate with the mask layer at a treatment temperature of 35° C. for 60 seconds.

[0669] In an exemplary embodiment, an etching solution is used to chemically etch the glass substrate on the side with the mask layer, and the glass substrate is cleaned after the etching is completed.

[0670] In an exemplary embodiment, the etching solution includes, by weight, 60 parts of sodium hydroxide, 20 parts of glycerol, and 40 parts of deionized water. The etching time is 30 minutes, and the etching solution temperature is 123°C.

[0671] In an exemplary embodiment, after chemical etching, the depth of the particles on the glass substrate is 15-30 μm, the maximum particle depth is 30 μm, and the maximum difference in depth size between particles is 15 μm.

[0672] In an exemplary embodiment, a solution containing 5% by weight of sodium hydroxide is used to remove the photoresist, and the treatment time is 1 minute.

[0673] In an exemplary embodiment, a chromium etching solution is used to remove the metal chromium layer, and the processing time is 5 minutes.

[0674] In an exemplary embodiment, the glass substrate on the side where the mask layer is removed is chemically polished, and the polishing is stopped when the transmission haze reaches 85%.

[0675] In an exemplary embodiment, the polishing liquid includes, by weight, 60 parts of sodium hydroxide and 40 parts of deionized water. The temperature of the polishing liquid is 125° C., and the polishing time is 45 minutes.

[0676] In an exemplary embodiment, the surface particle depth of the anti-glare glass obtained after polishing is 10-25 μm, the maximum difference in depth between particles is 15 μm, the particle diameter is 99.2-143.1 μm, and the maximum difference in diameter between particles is 43.9 μm.

[0677] In an exemplary embodiment, for the anti-glare glass of the embodiments of the present application, the specular gloss at a 60-degree angle is 13.2 GU; the DOI is 0.1%; the haze is 84.7%; the surface roughness is 4.551 μm; the flash point is none; moiré is none; rainbow pattern is none.

[0678] In an exemplary embodiment, as needed, the mask layer may only include a photosensitive layer, that is, only a photoresist is provided without using a metal chromium layer; it can be understood that when the metal chromium layer is not provided, there is naturally no need to use a chromium etchant to etch the metal chromium layer.

[0679] In an exemplary embodiment, as needed, after the chemical etching step is completed and before chemical polishing, the glass substrate may also be cleaned.

[0680] Example 28 Embodiment 28 of the present invention is an anti-glare glass, which is made by using the preparation method of the anti-glare glass of the above embodiment.

[0681] In an exemplary embodiment, in order to further demonstrate the excellent performance of the anti-glare glass of the embodiments of the present application, Table 1 is a performance comparison table of the anti-glare glass of the embodiments of the present application and the anti-glare glass formed by traditional chemical etching on the surface of a glass substrate in the prior art:

[0682] Table 1 60 - degree Angle specular gloss DOI (distinctness of image) Haze Roughness Flash point (220PPI) Moiré pattern Rainbow pattern Comparative Example 1 63GU 98.90% 18.60% 0.028μm 0.50 None None Comparative Example 2 25.40GU 39.50% 25.60% 0.227μm 4.09 None None Comparative Example 3 22.2GU 2.2% 33% 0.316μm 1.85 Yes Yes Comparative Example 4 65.2GU 22.3% 5.4% 0.143μm 2.213 Yes Yes Example 2 70.1GU 1.6% 5.0% 0.107μm None None None Example 3 45.2GU 0.9% 10.3% 0.156μm None None None Example 4 26.9GU 0.6% 22.1% 0.3029μm None None None Example 5 16GU 0.3% 44.5% 0.413μm None None ​ ​ ​ 1.5% 5.3% ​ ​ ​ ​ ​ ​ 0.6% 10.3% ​ ​ ​ ​ ​ ​ 0.7% 22.4% ​ ​ ​ ​ ​ ​ 0.7% 22.5% ​ ​ ​ ​ ​ ​ 0.5% 40.9% ​ ​ ​ ​ ​ ​ 0.3% 22.3% ​ ​ ​ ​ In an exemplary embodiment, as shown in Table 1, Comparative Example 1 and Comparative Example 2 are both anti-glare glasses formed by traditional chemical etching on the surface of a glass substrate. The process of the anti-glare glass formed by traditional chemical etching is generally as follows: First, a chemical etchant is directly and evenly sprayed on the glass surface, and after a certain period of time, it is cleaned, and then chemical polishing is performed. Chemical polishing is also to directly and evenly spray a polishing liquid on the surface of the glass after chemical etching and keep it for a certain period of time. The anti-glare glass treatment effect is achieved by different compositions of the chemical etchant and the polishing liquid and different reaction times. For example, for the anti-glare glass in Comparative Example 1 in Table 1, the process adopted is as follows: First, a chemical etchant is directly and evenly sprayed on the glass surface, and after 3 minutes, it is taken out and cleaned; the chemical etchant composition includes ammonium fluoride, oxalic acid, ammonium sulfate, sodium sulfate, glycerol and water, where the concentration of ammonium fluoride is 16.8 wt%, oxalic acid is 8 wt%, ammonium sulfate is 9 wt%, sodium sulfate is 15.7 wt%, glycerol is 39.3 wt%, and the proportion of water is 11.2 wt%; then, a chemical polishing liquid is directly and evenly sprayed on the surface of the glass after chemical etching. The anti-glare glass prepared by Comparative Example 1 has a low flash point but poor anti-glare ability.

[0683] For the anti-glare glass in Comparative Example 2 in Table 1, the process used is as follows: First, directly spray the chemical etching solution evenly on the glass surface, and after maintaining for 20 minutes, take it out and clean it; the chemical etching solution composition includes ammonium fluoride, oxalic acid, ammonium sulfate, sodium sulfate, glycerol and water, where the concentration of ammonium fluoride is 9.8wt%, oxalic acid is 4.5wt%, ammonium sulfate is 6.5wt%, sodium sulfate is 11wt%, glycerol is 25.2wt%, and the proportion of water is 43wt%. Then, directly spray the chemical polishing solution evenly on the surface of the chemically etched glass. Although the anti-glare effect of the anti-glare glass prepared by Comparative Example 2 is improved, the flash point is also very high.

[0684] As can be seen from Table 1, when the flash point is very small in Comparative Example 1, there is a problem of weak anti-glare performance; while when improving the anti-glare performance in Comparative Example 2, there will be a problem of large flash point, and it cannot meet the technical requirements of having no flash point, moiré pattern and rainbow pattern while having high anti-glare performance like the anti-glare glass in the embodiment of the present application.

[0685] Comparative Examples 3 and 4 in Table 1 are data obtained from a Chinese patent with the publication number CN116675439B. Although they take into account both high anti-glare performance and low flash point, the flash point problem still exists and has not been completely solved, and there are also problems of moiré pattern and rainbow pattern.

[0686] Those of ordinary skill in the art can understand that the above are only the preferred embodiments of the present application and are not used to limit the present application. Although the present application has been described in detail with reference to the foregoing embodiments, for those skilled in the art, they can still modify the technical solutions described in the foregoing embodiments, or perform equivalent replacements for some of the technical features. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A method for preparing anti-glare glass, characterized in that, Comprising: An attached mask layer, which is attached to the surface to be etched of the glass substrate, and a via hole array formed by irregular arrangement of a plurality of via holes is provided on the mask layer; Chemical etching, etching the side of the glass substrate with the attached mask layer; Removing the mask layer, removing the mask layer after the chemical etching is completed to obtain a glass substrate with independent concave particles distributed on the surface; Chemical polishing, chemically polishing the side of the glass substrate after removing the mask layer; The chemical polishing stops when adjacent concave particles are polished until they intersect and share the same edge, and the transmission haze of the surface of the glass substrate after removing the mask layer reaches 5%-85%.

2. The preparation method of the anti-glare glass according to claim 1, characterized in that, The via hole array includes a plurality of via holes with different diameter sizes, and the center distance sizes between any adjacent via holes are not completely the same; The diameter size range of the via holes is 5-50μm; The center distance size between adjacent via holes is 15-120μm; The difference between the maximum diameter size and the minimum diameter size of a single via hole on the via hole array is not less than 2μm; There is no overlapping part between any via holes on the via hole array; The difference between the maximum center distance size and the minimum center distance size of adjacent via holes on the via hole array is not less than 2μm.

3. The preparation method of the anti-glare glass according to claim 2, characterized in that, The difference between the maximum diameter size and the minimum diameter size of a single via hole on the via hole array is not less than 2μm and not more than 10μm.

4. The preparation method of the anti-glare glass according to claim 2, wherein, The difference between the maximum center distance size and the minimum center distance size of adjacent via holes on the via hole array is not less than 2μm and not more than 20μm.

5. The preparation method of the anti-glare glass according to claim 2, characterized in that, The diameter sizes of the via holes on the via hole array are normally distributed or approximately normally distributed with the average value of a single maximum diameter size and a single minimum diameter size as the central value.

6. The preparation method of the anti-glare glass according to claim 2, characterized in that, The diameter sizes of the via holes on the via hole array are divided into multiple equal parts with the maximum diameter size and the minimum diameter size as the end values, and the number of via holes in each equal part accounts for the same proportion of the total number of via holes on the mask layer.

7. The preparation method of the anti-glare glass according to claim 2, characterized in that, The via hole array includes: the diameter sizes between adjacent via holes are the same.

8. The preparation method of the anti-glare glass according to claim 2, characterized in that, The via hole array includes: the center distances between adjacent via holes are the same.

9. The preparation method of the anti-glare glass according to claim 2, wherein, The center distance sizes between adjacent via holes on the via hole array are normally distributed or approximately normally distributed with the average value of a single maximum center distance size and a single minimum center distance size as the central value.

10. The preparation method of the anti-glare glass according to claim 2, characterized in that, The center distance sizes between adjacent via holes on the via hole array are divided into multiple equal parts with the maximum center distance size and the minimum center distance size as the end values, and the number of center distances in each equal part accounts for the same proportion of the total number of center distances on the via hole array.

11. The preparation method of the anti-glare glass according to claim 2, characterized in that, The mask layer at least includes a photosensitive layer; The via hole array is arranged on the photosensitive layer.

12. The preparation method of the anti-glare glass according to claim 11, characterized in that, The mask layer further includes a metal layer. When the mask layer includes a metal layer, the metal layer is attached to the glass substrate, and the photosensitive layer is arranged on the side of the metal layer facing away from the glass substrate; When the mask layer includes the metal layer, before the chemical etching step, it further includes: Etching the metal layer to etch out the via hole array on the metal layer.

13. The preparation method of the anti-glare glass according to claim 2, characterized in that, The chemical etching includes etching the glass substrate within the through hole on the side with the mask layer attached thereto until the depth dimension of the particles on the surface of the glass substrate is 0.5 - 30 μm, and the maximum depth dimension of the particles is 5 - 30 μm.

14. The method for preparing the anti-glare glass according to claim 13, wherein The chemical polishing further includes polishing the glass substrate until the depth dimension range of the particles is 0.3 - 25 μm, the difference between the maximum depth dimension and the minimum depth dimension of the particles is 1 - 15 μm, the diameter dimension range of the particles is 15 - 150 μm, and the difference between the maximum diameter dimension and the minimum diameter dimension of the particles is 3 - 70 μm.

15. The preparation method of the anti-glare glass according to claim 1, wherein, The chemical etching uses an acidic etching solution or an alkaline etching solution; The chemical polishing uses an acidic polishing solution or an alkaline polishing solution.

16. The method for preparing the anti-glare glass according to claim 15, wherein The acidic etching solution includes, by mass parts: 10 - 15 parts of ammonium bifluoride, 2 - 5 parts of potassium bifluoride, 30 - 40 parts of glycerol, and 30 - 40 parts of deionized water.

17. The preparation method of the anti-glare glass according to claim 15, characterized in that, The alkaline etching solution includes, by mass parts: 45 - 60 parts of sodium hydroxide, 20 - 30 parts of glycerol, and 40 - 55 parts of deionized water.

18. The preparation method of the anti-glare glass according to claim 15, characterized in that, The acidic polishing solution includes, by mass parts: 8 - 12 parts of hydrofluoric acid, 8 - 12 parts of sulfuric acid, and 60 - 80 parts of deionized water.

19. The preparation method of the anti-glare glass according to claim 15, wherein, The alkaline polishing solution includes, by mass parts: 45 - 60 parts of sodium hydroxide and 40 - 55 parts of deionized water.

20. An anti-glare glass, characterized in that, It is made by using the preparation method of the anti-glare glass according to any one of claims 1 - 19.

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