Isolated and sealed double-gas-path reaction device

Abstract

The invention discloses an isolating and sealing double-gas-path reaction device which comprises an outer gas inlet ring, an inner gas inlet ring, a gas pipeline connecting piece, a sealing cover and a base, the inner gas inlet ring is arranged in the outer gas inlet ring in a sleeved mode, and an upper isolating chamber and a lower isolating chamber which are vertically isolated are arranged in the gas pipeline connecting piece; a first connecting pipe communicated with the upper isolation chamber and a second connecting pipe communicated with the lower isolation chamber are arranged on the gas pipeline connecting piece; an upper air inlet and a lower air inlet which are distributed up and down are formed in the side wall of the side, connected with the gas pipeline connecting piece, of the outer air inlet ring, the upper air inlet is communicated with the upper isolation chamber, and the lower air inlet is communicated with the lower isolation chamber. According to the device provided by the invention, different reaction gases can enter the interior of the chamber through different passages respectively, and incompatible reaction gases are isolated in space, so that the incompatible gases can be prevented from reacting at the gas pipeline connecting piece, and pollution to the interior of the reaction device is avoided.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor composite film coating devices, and more specifically, to an isolated and sealed dual-gas-path reaction device. Background Art

[0002] In the semiconductor manufacturing process, wafer coating is a crucial step, and its quality directly affects the performance and reliability of chips. With the development of chip manufacturing technology towards higher precision and more complex processes, strict requirements are put forward for indicators such as the uniformity and purity of wafer coating. For some advanced memory chips, during the coating process of their wafers, it is often necessary to introduce two or more different reaction gases to deposit on the wafers; before the gases of the existing reaction devices enter the interior of the reaction device, they are prone to mixing at the places connected to the pipelines, and incompatible gases are prone to react at the connectors, and the reaction products are prone to pollute the internal environment of the reaction device, thereby affecting the coating effect of the wafers. Summary of the Invention

[0003] In view of this, the purpose of the present invention is to provide an isolated and sealed dual-gas-path reaction device to solve the problems existing in the prior art.

[0004] To achieve the above purpose, the technical solution of the present invention is as follows: An isolated and sealed dual-gas-path reaction device, comprising: An outer air inlet ring; An inner air inlet ring sleeved inside the outer air inlet ring, and a reaction chamber is formed inside the inner air inlet ring; A gas pipeline connector connected to the side wall of the outer air inlet ring; A sealing cover connected to the top of the outer air inlet ring and a base connected to the bottom of the outer air inlet ring; The interior of the gas pipeline connector is provided with an upper isolation chamber and a lower isolation chamber that are separated up and down. The gas pipeline connector is provided with a first connecting pipe communicating with the upper isolation chamber and a second connecting pipe communicating with the lower isolation chamber; On the side wall of the outer air inlet ring connected to the gas pipeline connector, upper air inlets and lower air inlets are arranged up and down. The upper air inlet communicates with the upper isolation chamber, and the lower air inlet communicates with the lower isolation chamber; On the inner air inlet ring, an upper air distribution channel is opened corresponding to the upper air inlet, and a lower air distribution channel is opened corresponding to the lower air inlet; both the upper air distribution channel and the lower air distribution channel are formed by a plurality of through holes evenly distributed; The gas entering through the first connecting pipe sequentially passes through the upper isolation chamber, the upper air inlet, and the upper air distribution channel and enters the reaction chamber; the gas entering through the second connecting pipe sequentially passes through the lower isolation chamber, the lower air inlet, and the lower air distribution channel and enters the reaction chamber.

[0005] Further, an outer sealing ring installation groove surrounding both the upper air distribution channel and the lower air distribution channel, and an inner sealing ring installation groove surrounding only the lower air distribution channel or only the upper air distribution channel are provided on the inner air inlet ring; an outer sealing ring is provided in the outer sealing ring installation groove, and an inner sealing ring is provided in the inner sealing ring installation groove.

[0006] Further, an arc-shaped notch is machined on one side of the inner air inlet ring opposite to the side where the upper air distribution channel is provided.

[0007] Further, the central angle corresponding to the arc-shaped notch is greater than 180°.

[0008] Further, the central angles corresponding to the upper air inlet and the lower air inlet are both 100° - 150°.

[0009] Further, the number of through holes in the upper air distribution channel is set to 5 - 10, and the number of through holes in the lower air distribution channel is set to 5 - 10.

[0010] The beneficial effects of the present invention are as follows: The device provided by the present invention is mainly used for semiconductor thin film processes, and this device is mainly used for the deposition of two or more different reaction gases on a wafer; through the processing of double air channels on two annular parts, namely the outer air inlet ring and the inner air inlet ring, and the design of the air distribution channels, it can achieve the sequential and uniform deposition of two or more incompatible reaction gases on the wafer in the reaction device without generating particulate matter before the reaction; further, the isolation and sealing method of this device mainly passes through the setting of double sealing grooves, namely the outer sealing ring installation groove and the inner sealing ring installation groove, on the annular seal. By optimizing its structure, when installing, the inner air inlet ring with the sealing groove undergoes an "L" motion to achieve the sealing effect and realize the isolation and sealing of two different gases; As a whole, it can enable different reaction gases to enter the chamber interior through different paths respectively, separate incompatible reaction gases spatially, and avoid the reaction of incompatible gases at the gas pipeline connectors, thus avoiding pollution to the interior of the reaction device. Description of the Drawings

[0011] To more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the following will briefly introduce the accompanying drawings required for the description of the embodiments or the prior art. Obviously, the accompanying drawings in the following description are only some embodiments of the present application. For those of ordinary skill in the art, other embodiments can also be obtained based on these drawings.

[0012] Figure 1 is a schematic diagram of the overall structure of the present invention.

[0013] Figure 2 is an exploded schematic diagram of the present invention.

[0014] Figure 3 is a schematic top view structure diagram of the present invention.

[0015] Figure 4 is along Figure 3 the cross-sectional structure diagram taken at B-B in

[0016] Figure 5 is a schematic structure diagram of the gas pipeline connector in the present invention.

[0017] Figure 6 is a schematic structure diagram of the inner intake ring in the present invention.

[0018] Explanation of reference numerals: 1. Sealing cover; 2. Gas pipeline connector; 21. Upper isolation chamber; 22. Lower isolation chamber; 23. First connecting pipe; 24. Second connecting pipe; 3. Inner intake ring; 31. Upper gas distribution channel; 32. Lower gas distribution channel; 33. Outer sealing ring installation groove; 34. Inner sealing ring installation groove; 35. Arc surface notch; 36. Reaction chamber; 4. Outer intake ring; 41. Upper intake port; 42. Lower intake port; 5. Base; 100. Wafer. Detailed implementation manners

[0019] The following will explain and illustrate in detail the structure provided by the present invention in conjunction with the accompanying drawings of the specification.

[0020] Refer to Figures 1 to 6 as shown, this embodiment specifically discloses an isolation and sealing dual-gas reaction device, which is mainly used for the deposition of two or more different reaction gases on a wafer, and includes: Outer intake ring 4; An inner intake ring 3 sleeved inside the outer intake ring 4, and a reaction chamber 36 is formed inside the inner intake ring 3; A gas pipeline connector 2 connected to the side wall of the outer intake ring 4; A sealing cover 1 connected to the top of the outer intake ring 4 and a base 5 connected to the bottom of the outer intake ring 4; An upper isolation chamber 21 and a lower isolation chamber 22 that are vertically separated are provided inside the gas pipeline connector 2. A first connecting pipe 23 communicating with the upper isolation chamber 21 and a second connecting pipe 24 communicating with the lower isolation chamber 22 are provided on the gas pipeline connector 2; Upper air inlets 41 and lower air inlets 42 that are vertically distributed are provided on the side wall of the outer intake ring 4 on the side connected to the gas pipeline connector 2. The upper air inlet 41 communicates with the upper isolation chamber 21, and the lower air inlet 42 communicates with the lower isolation chamber 22; An upper air distribution channel 31 is provided on the inner intake ring 3 corresponding to the upper air inlet 41, and a lower air distribution channel 32 is provided corresponding to the lower air inlet 42; both the upper air distribution channel 31 and the lower air distribution channel 32 are formed by uniformly distributing a plurality of through holes; The gas entering through the first connecting pipe 23 sequentially passes through the upper isolation chamber 21, the upper air inlet 41, and the upper air distribution channel 31 and enters the reaction chamber 36; the gas entering through the second connecting pipe 24 sequentially passes through the lower isolation chamber 22, the lower air inlet 42, and the lower air distribution channel 32 and enters the reaction chamber 36.

[0021] In this embodiment, the sealing cover 1 is hermetically installed at the upper end of the outer intake ring 4. The wafer 100 to be deposited can be placed inside the inner intake ring 3 at the upper end through a carrier (not shown in the figure), that is, inside the reaction chamber 36. The entire reaction device can be hermetically connected to a bracket (not shown in the figure) for supporting the entire reaction device through the base 5 at the bottom; One of the external reaction gases can enter the upper isolation chamber 21 through the first connecting pipe 23, and then enter the chamber inside the inner intake ring 3, that is, the reaction chamber 36, through the upper air inlet 41 and the upper air distribution channel 31, and can then contact the internal wafer 100 to achieve deposition; when depositing another gas, it can enter the lower isolation chamber 22 through the second connecting pipe 24, and then enter the chamber inside the inner intake ring 3, that is, the reaction chamber 36, through the lower air inlet 42 and the lower air distribution channel 32, and can also contact the internal wafer 100 to achieve deposition.

[0022] Through the above settings, different reaction gases enter the chamber interior through different paths, separating incompatible reaction gases spatially, which can avoid reactions between incompatible gases at the gas pipeline connector 2 (generally, after a certain gas is introduced, there will be residues in its corresponding path. If another reaction gas is introduced through the same path, it is easy to react with the residual gas, causing contamination), and avoid contaminating the interior of the reaction device.

[0023] In the illustrated embodiment, the first connecting pipe 23 is arranged at the upper end of the gas pipeline connector 2, and the second connecting pipe 24 is arranged at the bottom of the gas pipeline connector 2; it can be directly communicated with the corresponding chamber inside the gas pipeline connector 2.

[0024] Optionally, in some other embodiments, if three different reaction gases need to be introduced, a middle chamber separated from the upper isolation chamber 21 and the lower isolation chamber 22 can be further arranged in the gas pipeline connector 2. A middle air inlet is opened on the corresponding outer air inlet ring 4. One end of the middle chamber is also communicated with the pipeline for conveying the third reaction gas outside, and the other end is communicated with the middle air inlet.

[0025] It should be noted that in the actual atomic deposition process, different reaction gases are usually not introduced simultaneously. For example, generally, the reaction gas A is introduced for a period of time for deposition first, then the introduction of the reaction gas A is stopped, and then the reaction gas B is introduced for a period of time for deposition, and so on alternately.

[0026] In some embodiments, an outer seal installation groove 33 that surrounds both the upper air distribution channel 31 and the lower air distribution channel 32, and an inner seal installation groove 34 that surrounds only the lower air distribution channel 32 or only the upper air distribution channel 31 are provided on the inner air inlet ring 3; an outer seal (not shown in the figure) is arranged in the outer seal installation groove 33, and an inner seal (not shown in the figure) is arranged in the inner seal installation groove 34.

[0027] By installing seals on the outer peripheries of the upper air distribution channel 31 and the lower air distribution channel 32 corresponding to the inner air inlet ring 3, the sealing performance of the corresponding air channels during the introduction of different gases can be further improved. In the illustrated embodiment, the inner seal installation groove 34 is arranged on the outer periphery of the lower air distribution channel 32. The reaction gas entering through the second connecting pipe 24, the lower air inlet 42, and the lower air distribution channel 32 will basically not leak to the upper air distribution channel 31 under the action of the inner seal, effectively improving the sealing and isolation effect.

[0028] In this embodiment, an arc surface notch 35 is machined on one side of the inner air inlet ring 3 opposite to the side where the upper air distribution channel 31 is provided; the central angle corresponding to the arc surface notch 35 is greater than 180°.

[0029] That is, after the arc surface notch 35 is machined on one side of the inner air inlet ring 3, the radius dimension corresponding to this side is smaller than that of the other side (the side where the upper and lower air distribution channels are opened). The outer diameter of the side where the upper and lower air distribution channels are opened is the same as the inner diameter of the outer air inlet ring 4; combined with Figure 6, on its right side is an arc surface notch 35, and on its left side is the sealing surface side (the side where the upper and lower gas equalizing channels are opened). Moreover, the proportion on the right side is greater than that on the left side, that is, the central angle corresponding to the arc surface notch 35 is greater than 180°, so that after installing the inner and outer sealing rings, it is convenient to install and sleeve the intake air ring 3 inside the outer intake air ring 4. Specifically, during installation, the inner intake air ring 3 can be first installed from the right side close to the outer intake air ring 4 into the inner bottom of the outer intake air ring 4, generating a vertical displacement. After reaching the bottom, a horizontal displacement to the left is then carried out, that is, a movement in an "L" trajectory is formed to achieve the tight fit between the left side of the inner intake air ring 3 and the left side of the outer intake air ring 4, and sealing is formed through the corresponding sealing rings in the corresponding sealing grooves.

[0030] It can be understood that after the inner intake air ring 3 moves to the left, a certain gap will be formed between the right arc surface notch 35 and the inner wall of the outer intake air ring 4. The movement of the inner intake air ring 3 can be restricted by setting a limiting member in the gap or directly fixing the inner intake air ring 3 and the outer intake air ring 4 through a positioning member (such as a bolt) after the inner intake air ring 3 is installed in place, so as to achieve a stable sealing effect.

[0031] In some embodiments, the central angles corresponding to the upper air inlet 41 and the lower air inlet 42 are both 100° - 150°, the number of through holes in the upper gas equalizing channel 31 is set to 5 - 10, and the number of through holes in the lower gas equalizing channel 32 is set to 5 - 10; it can be understood that the outlet of the upper isolation chamber 21 needs to completely cover the upper air inlet 41, and the outlet of the lower isolation chamber 22 also needs to completely cover the lower air inlet 42 to avoid leakage of reaction gases and ensure the sealing performance. By setting the central angles corresponding to the upper air inlet 41 and the lower air inlet 42 to 100° - 150° and uniformly setting the number of through holes at the same time, the introduced reaction gases can be more evenly distributed, and then deposited into the desired thin film.

[0032] In summary, the isolation and sealing dual-gas-path reaction device provided by this embodiment can solve the isolation of two or more incompatible gases to prevent the generation of particulate matter inside the reaction chamber (the chamber for placing wafers) or at the front pipeline of the reaction chamber; It can solve the sealing of two annular components, and improve the problem of later assembly and sealing performance by modifying the structure of the internal annular component (inner intake air ring).

[0033] It can evenly distribute gases through the design of the gas equalizing structure to achieve the effect of uniform deposition, so as to meet the consistency requirements of the thin film process.

[0034] In the description of the present invention, it should be understood that the orientation or positional relationships indicated by the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. are based on the orientation or positional relationships shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation on the present invention.

[0035] In the present invention, unless otherwise clearly defined and limited, the terms "mounted", "connected", "connected to", "fixed", etc. shall be construed in a broad sense. For example, it may be a fixed connection, a detachable connection, or integrated; it may be a mechanical connection or an electrical connection; it may be directly connected or indirectly connected through an intermediate medium, and it may be the internal communication of two elements or the interaction relationship between two elements, unless otherwise clearly limited. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0036] In the description of this specification, the descriptions referring to the terms "this embodiment", "one embodiment", "some embodiments", "examples", "specific examples", or "some examples", etc. mean that the specific features, structures, materials, or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic descriptions of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described can be combined in a suitable manner in any at least one embodiment or example. In addition, without contradiction, those skilled in the art can combine and combine the different embodiments or examples described in this specification and the features of different embodiments or examples.

[0037] In addition, the terms "first" and "second" are only used for descriptive purposes and cannot be construed as indicating or implying relative importance or implicitly indicating the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include at least one of such features. In the description of the present invention, the meaning of "a plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0038] The above are only the preferred embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent replacements, and simple improvements made to the substantial content of the present invention shall be included in the protection scope of the present invention.

Claims

1. An isolation-sealed dual-gas-path reaction device, characterized in that Comprising: An outer air inlet ring (4); An inner air inlet ring (3) sleeved inside the outer air inlet ring (4), with a reaction chamber (36) formed inside the inner air inlet ring (3); A gas pipeline connector (2) connected to the side wall of the outer air inlet ring (4); A sealing cover (1) connected to the top of the outer air inlet ring (4) and a base (5) connected to the bottom of the outer air inlet ring (4); An upper isolation chamber (21) and a lower isolation chamber (22) are provided inside the gas pipeline connector (2) and are separated up and down. A first connecting pipe (23) communicating with the upper isolation chamber (21) and a second connecting pipe (24) communicating with the lower isolation chamber (22) are provided on the gas pipeline connector (2); Upper air inlets (41) and lower air inlets (42) are provided on the side wall of the outer air inlet ring (4) connected to the gas pipeline connector (2) and are distributed up and down. The upper air inlet (41) communicates with the upper isolation chamber (21), and the lower air inlet (42) communicates with the lower isolation chamber (22); An upper air distribution channel (31) is provided on the inner air inlet ring (3) corresponding to the upper air inlet (41), and a lower air distribution channel (32) is provided corresponding to the lower air inlet (42); both the upper air distribution channel (31) and the lower air distribution channel (32) are formed by evenly distributing a plurality of through holes; The gas entering through the first connecting pipe (23) sequentially passes through the upper isolation chamber (21), the upper air inlet (41), and the upper air distribution channel (31) and enters the reaction chamber (36); the gas entering through the second connecting pipe (24) sequentially passes through the lower isolation chamber (22), the lower air inlet (42), and the lower air distribution channel (32) and enters the reaction chamber (36).

2. The isolated and sealed dual-gas-path reaction device according to claim 1, wherein An outer sealing ring installation groove (33) surrounding both the upper air distribution channel (31) and the lower air distribution channel (32) and an inner sealing ring installation groove (34) surrounding only the lower air distribution channel (32) or only the upper air distribution channel (31) are provided on the inner air inlet ring (3); an outer sealing ring is provided in the outer sealing ring installation groove (33), and an inner sealing ring is provided in the inner sealing ring installation groove (34).

3. The isolated and sealed dual-gas-path reaction device according to claim 2, wherein, An arc-shaped notch (35) is machined on one side of the inner air inlet ring (3) opposite to the side where the upper air distribution channel (31) is provided.

4. The isolated and sealed dual-gas-path reaction device according to claim 3, wherein, The central angle corresponding to the arc-shaped notch (35) is greater than 180°.

5. The isolated and sealed dual-gas-path reaction device according to claim 1, wherein The central angles corresponding to both the upper air inlet (41) and the lower air inlet (42) are 100° - 150°.

6. The isolated and sealed dual-gas-path reaction device according to claim 1, wherein The number of through holes in the upper air distribution channel (31) is set to 5 - 10, and the number of through holes in the lower air distribution channel (32) is set to 5 - 10.

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