Sensing device for sensing an x-ray signal

Abstract

The present disclosure provides a sensing device for sensing an X-ray signal. The sensing device comprises a first scintillator, a first sensing circuit, a second sensing circuit and a processor. The first scintillator converts an X-ray signal into an optical signal. The first sensing circuit provides first image data according to an optical signal. The first sensing circuit includes a plurality of first sensing pixels. The plurality of first sensing pixels each have a first pixel size in a first direction and a second pixel size in a second direction. The second sensing circuit provides second image data according to the optical signal. The first sensing circuit is superposed between the second sensing circuit and the first scintillator. An offset exists between the second sensing circuit and the first sensing circuit. The offset is less than the first pixel size in the first direction and less than the second pixel size in the second direction. The processor generates an X-ray image according to the first image data and the second image data.

Description

Technical Field

[0001] The present disclosure relates to a sensing device, and in particular, to a sensing device for sensing X-ray signals. Background Art

[0002] In the application field of X-rays, a sensing device can receive X-ray signals after an object is irradiated with X-rays and generate X-ray images based on the X-ray signals. The sensing device may include a plurality of sensing pixels. Each sensing pixel includes a control circuit. To reduce the cost of the sensing device, the control circuit can be implemented using thin-film transistors (TFTs). However, limited by the size of the TFTs, the fill factor (FF) of the sensing area in the sensing pixels will be reduced. Therefore, the size of the sensing pixels must be increased. Therefore, the control circuit implemented by TFTs will limit the resolution of the sensing device. Summary of the Invention

[0003] The present disclosure is directed to a sensing device for sensing X-ray signals, which can improve the resolution of the sensing device.

[0004] According to an embodiment of the present disclosure, the sensing device includes a first scintillator, a first sensing circuit, a second sensing circuit, and a processor. The first scintillator converts X-ray signals into optical signals. The first sensing circuit provides first image data based on the optical signals. The first sensing circuit includes a plurality of first sensing pixels. Each of the plurality of first sensing pixels has a first pixel size in a first direction and a second pixel size in a second direction. The second sensing circuit provides second image data based on the optical signals. The first sensing circuit is stacked between the second sensing circuit and the first scintillator. There is an offset between the second sensing circuit and the first sensing circuit. The offset is less than the first pixel size in the first direction and less than the second pixel size in the second direction. The processor is coupled to the first sensing circuit and the second sensing circuit. The processor generates an X-ray image based on the first image data and the second image data.

[0005] Based on the above, the processor generates an X-ray image based on the first image data and the second image data. It should be noted that there is an offset between the second sensing circuit and the first sensing circuit. Therefore, the first image data and the second image data have the same offset. The resolution of the X-ray image can be determined based on the offset. Therefore, the resolution of the sensing device can be improved. Brief Description of the Drawings

[0006] Figure 1 is a schematic diagram of a sensing device shown according to an embodiment of the present disclosure;

[0007] Figure 2A , Figure 2B are respectively schematic diagrams of the configurations of the sensing devices shown according to an embodiment of the present disclosure;

[0008] Figure 3A , Figure 3B are respectively schematic diagrams of the configurations of the sensing devices shown according to an embodiment of the present disclosure;

[0009] Figure 4A , Figure 4B , Figure 4C are respectively schematic diagrams of the configurations of the sensing devices shown according to an embodiment of the present disclosure;

[0010] Figure 5 is a schematic diagram of a first sensing circuit and a second sensing circuit shown according to an embodiment of the present disclosure;

[0011] Figure 6 is a schematic diagram of the calculation of the grayscale value shown according to an embodiment of the present disclosure.

[0012] Description of Reference Numerals

[0013] 100, 200A, 200B, 300A, 300B, 400A, 400B, 400C: Sensing devices

[0014] 110: First scintillator

[0015] 120_1: First sensing circuit

[0016] 120_2: Second sensing circuit

[0017] 130: Processor

[0018] 140: Second scintillator

[0019] 150: Light reflection layer

[0020] D: Offset

[0021] DIMG1: First image data

[0022] DIMG2: Second image data

[0023] DRX: First direction

[0024] DRY: Second direction

[0025] DRZ: Lamination direction

[0026] DX: First offset dimension

[0027] DY: Second offset dimension

[0028] GR’, GR1~GR4, GR1’~GR4’: Gray scale values

[0029] P’: Target sensing pixel

[0030] P1~P4: Overlapped sensing pixels

[0031] P1’~P4’: Regions

[0032] PC1: First pixel control circuit

[0033] PC2: Second pixel control circuit

[0034] PX: First pixel size

[0035] PXC1: First sensing pixel

[0036] PXC2: Second sensing pixel

[0037] PY: Second pixel size

[0038] SL: Optical signal

[0039] PL1: First surface

[0040] PL2: Second surface

[0041] SUB: Transparent substrate

[0042] SUB1: First transparent substrate

[0043] SUB2: Second transparent substrate

[0044] SX: X-ray signal

[0045] W1~W4: Weights

[0046] XIMG: X-ray image Detailed implementation manners

[0047] Some embodiments of the present disclosure will be described in detail below in conjunction with the accompanying drawings. For the component symbols cited in the following description, when the same component symbols appear in different drawings, they will be regarded as the same or similar components. These embodiments are only a part of the present disclosure and do not disclose all the implementable manners of the present disclosure. More precisely, these embodiments are only examples in the claims of the present disclosure.

[0048] Throughout the specification and the appended claims of the present disclosure, certain terms will be used to refer to specific components. Those skilled in the art should understand that electronic device manufacturers may use different names to refer to the same component. This document does not intend to distinguish components that have the same function but different names. In the following specification and claims, words such as "comprising" and "including" are open-ended words, and thus should be interpreted as meaning "including but not limited to...".

[0049] The directional terms mentioned in this document, such as "upper", "lower", "front", "rear", "left", "right", etc., are only references to the directions in the accompanying drawings. Therefore, the directional terms used are for illustration purposes and not for limiting the present disclosure. In the accompanying drawings, each drawing shows the general characteristics of the methods, structures, and / or materials used in specific embodiments. However, these drawings should not be construed as defining or limiting the scope or nature covered by these embodiments. For example, for clarity, the relative sizes, thicknesses, and positions of each film layer, region, and / or structure may be reduced or enlarged.

[0050] In some embodiments of the present disclosure, terms related to joining and connecting, such as "joining", "connecting", "interconnecting", etc., unless otherwise specifically defined, may refer to two structures being in direct contact, or may also refer to two structures not being in direct contact, with other structures disposed between these two structures. And these terms related to joining and connecting may also include cases where both structures are movable, or both structures are fixed. In addition, the term "coupled" includes any means of direct or indirect electrical connection. In the case of direct electrical connection, the endpoints of the components on two circuits are directly connected or interconnected by a conductor segment, and in the case of indirect electrical connection, there are switches, diodes, capacitors, inductors, resistors, other suitable components, or combinations of the above components between the endpoints of the components on two circuits, but not limited thereto.

[0051] The terms "about", "equal to", "equivalent to" or "the same", "substantially" or "approximately" are generally interpreted as being within 20% of the given value or range, or within 10%, 5%, 3%, 2%, 1%, or 0.5% of the given value or range.

[0052] The ordinal numbers used in the specification and claims, such as "first", "second", etc., are used to modify components, and do not themselves imply or represent any previous ordinal numbers of the said, or said plurality of, components, nor do they represent the order of one component and another component, or the order in the manufacturing method. The use of these ordinal numbers is only to clearly distinguish a component with a certain name from another component with the same name. The claims and the specification may not use the same terms. Accordingly, the first component in the specification may be the second component in the claims. It should be noted that, without departing from the spirit of the present disclosure, the technical features in several different embodiments can be replaced, recombined, and mixed to complete other embodiments.

[0053] It should be noted that, without departing from the spirit of the present disclosure, the features in several different embodiments can be replaced, recombined, and mixed to complete other embodiments. As long as the features between the embodiments do not violate the inventive spirit or conflict with each other, they can be arbitrarily mixed and used.

[0054] Unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure pertains. It is understood that such terms, if defined in a commonly used dictionary, should be interpreted as having a meaning consistent with the relevant art and the background or context of this disclosure, and should not be interpreted in an idealized or overly formal manner, unless specifically defined in the embodiments of this disclosure.

[0055] The electronic device in the present disclosure may include a light detection device or a splicing device, but is not limited thereto. The electronic device (such as a photodetector) may be a bendable or flexible electronic device. In the present disclosure, the electronic device (such as a photodetector) may include electronic components, and the electronic components may include passive components and active components, such as capacitors, resistors, inductors, diodes, transistors, etc. The diode may include a light-emitting diode or a photodiode. The light-emitting diode may include, for example, an organic light-emitting diode (OLED), a mini light-emitting diode (mini LED), a micro light-emitting diode (micro LED), or a quantum dot light-emitting diode (quantum dot LED), but is not limited thereto. Hereinafter, the detection device will be used as the electronic device or the splicing device to illustrate the content of the present disclosure, but the present disclosure is not limited thereto.

[0056] In the present disclosure, embodiments use "pixel" or "pixel unit" as a unit for describing a specific area including at least one functional circuit for at least one specific function. The area of the "pixel" depends on the unit for providing the specific function, and adjacent pixels may share the same part or wire, but may also include its own specific part therein. For example, adjacent pixels may share the same scan line or the same data line, but the pixel may also have its own transistor or capacitor.

[0057] It should be noted that the technical features in the following described different embodiments can be replaced, recombined, or mixed with each other without departing from the spirit of the present disclosure to form another embodiment.

[0058] Please refer to Figure 1 , Figure 1 is a schematic diagram of a sensing device according to an embodiment of the present disclosure. In this embodiment, the sensing device 100 is used to sense the X-ray signal SX. The sensing device 100 includes a first scintillator 110, a first sensing circuit 120_1, a second sensing circuit 120_2, and a processor 130. The first scintillator 110 converts the X-ray signal SX into an optical signal SL. For example, the first scintillator 110 may convert the X-ray signal SX into an optical signal SL having a visible light wavelength.

[0059] In this embodiment, the first sensing circuit 120_1 receives the optical signal SL. The first sensing circuit 120_1 provides the first image data DIMG1 based on the optical signal SL. The first sensing circuit 120_1 includes a plurality of first sensing pixels PXC1. Each of the plurality of first sensing pixels PXC1 has a first pixel size PX in the first direction DRX. Each of the plurality of first sensing pixels PXC1 has a second pixel size PY in the second direction DRY. The second sensing circuit 120_2 receives the optical signal SL and provides the second image data DIMG2 based on the optical signal SL.

[0060] The first sensing circuit 120_1 is stacked between the second sensing circuit 120_2 and the first scintillator 110. There is an offset D between the second sensing circuit 120_2 and the first sensing circuit 120_1. The offset D is less than the first pixel size PX in the first direction DRX. The offset D is less than the second pixel size PY in the second direction DRY.

[0061] Furthermore, the offset D has a first offset size DX in the first direction DRX. The offset D has a second offset size DY in the second direction DRY. The first offset size DX is less than the first pixel size PX. The second offset size DY is less than the second pixel size PY.

[0062] For example, the first offset size DX is equal to one half of the first pixel size PX. The second offset size DY is equal to one half of the second pixel size PY, but the present disclosure is not limited thereto.

[0063] In this embodiment, the processor 130 is coupled to the first sensing circuit 120_1 and the second sensing circuit 120_2. The processor 130 receives the first image data DIMG1 and the second image data DIMG2. The processor 130 generates the X-ray image XIMG based on the first image data DIMG1 and the second image data DIMG2.

[0064] It is worth mentioning here that the processor 130 generates the X-ray image XIMG based on the first image data DIMG1 and the second image data DIMG2. It should be noted that there is an offset D between the second sensing circuit 120_2 and the first sensing circuit 120_1. Therefore, there is also the same offset D between the first image data DIMG1 and the second image data DIMG2. The resolution of the X-ray image XIMG can be determined based on the offset D. In this way, the resolution of the sensing device 100 can be improved.

[0065] In addition, during the reception of the same X-ray image XIMG, both the first sensing circuit 120_1 and the second sensing circuit 120_2 can receive the optical signal SL. The first image data DIMG1 and the second image data DIMG2 are generated almost simultaneously. Therefore, the time length required for the processor 130 to generate the X-ray image XIMG can be shortened.

[0066] In this embodiment, the second sensing circuit 120_2 includes a plurality of second sensing pixels PXC2. Taking this embodiment as an example, each of the plurality of second sensing pixels PXC2 has a first pixel size PX in the first direction DRX. Each of the plurality of second sensing pixels PXC2 has a second pixel size PY in the second direction DRY. In other words, the sizes of the plurality of second sensing pixels PXC2 are the same as those of the plurality of first sensing pixels PXC1.

[0067] In this embodiment, the processor 130 is, for example, a Central Processing Unit (CPU), or other programmable general-purpose or special-purpose microprocessors, Digital Signal Processors (DSPs), programmable controllers, Application Specific Integrated Circuits (ASICs), Programmable Logic Devices (PLDs), or other similar devices, or a combination of these devices, which can load and execute computer programs.

[0068] Please refer to Figure 2A , Figure 2A FIG. is a schematic configuration diagram of a sensing device according to an embodiment of the present disclosure. In this embodiment, the sensing device 200A includes a first scintillator 110, a first sensing circuit 120_1, a second sensing circuit 120_2, a processor 130 (not shown), a first transparent substrate SUB1, and a second transparent substrate SUB2. The first sensing circuit 120_1 is disposed on the first transparent substrate SUB1. The second sensing circuit 120_2 is disposed on the second transparent substrate SUB2. The first transparent substrate SUB1 and the second transparent substrate SUB2 are substrates having a high light transmittance, respectively. For example, the first transparent substrate SUB1 and the second transparent substrate SUB2 are glass substrates, sapphire substrates, quartz substrates, or plastic substrates, but the present disclosure is not limited to the materials of the first transparent substrate SUB1 and the second transparent substrate SUB2.

[0069] In this embodiment, the first sensing circuit 120_1 is located between the first transparent substrate SUB1 and the first scintillator 110. In other words, the first sensing circuit 120_1 and the first transparent substrate SUB1 form the first structure STR1. The second sensing circuit 120_2 and the second transparent substrate SUB2 form the second structure STR2. The first structure STR1 is stacked between the second structure STR2 and the first scintillator 110.

[0070] The offset configuration between the first sensing circuit 120_1 and the second sensing circuit 120_2 has been clearly described in the Figure 1 embodiment, and thus will not be repeated here.

[0071] Please refer to Figure 2B , Figure 2B which is a schematic configuration diagram of a sensing device according to an embodiment of the present disclosure. In this embodiment, the sensing device 200B includes a first scintillator 110, a first sensing circuit 120_1, a second sensing circuit 120_2, a processor 130 (not shown), a first transparent substrate SUB1, and a second transparent substrate SUB2. The first sensing circuit 120_1 is disposed on the first transparent substrate SUB1. The second sensing circuit 120_2 is disposed on the second transparent substrate SUB2.

[0072] Different from Figure 2A , in this embodiment, the first scintillator 110 is located between the first transparent substrate SUB1 and the second sensing circuit 120_2. In other words, the first sensing circuit 120_1 and the first transparent substrate SUB1 form the first structure STR1. The second sensing circuit 120_2 and the second transparent substrate SUB2 form the second structure STR2. The first scintillator 110 is stacked between the first structure STR1 and the second structure STR2. Therefore, the first scintillator 110 receives X-ray signals (e.g., Figure 1 X-ray signal SX) through the first sensing circuit 120_1 and the first transparent substrate SUB1, and converts the X-ray signals into optical signals (e.g., Figure 1 optical signal SL).

[0073] Please refer to Figure 3A , Figure 3A which is a schematic configuration diagram of a sensing device according to an embodiment of the present disclosure. In this embodiment, the sensing device 300A includes a first scintillator 110, a second scintillator 140, a first sensing circuit 120_1, a second sensing circuit 120_2, a processor 130 (not shown), a first transparent substrate SUB1, and a second transparent substrate SUB2. The first sensing circuit 120_1 is disposed on the first transparent substrate SUB1. The second sensing circuit 120_2 is disposed on the second transparent substrate SUB2.

[0074] The offset configuration between the first sensing circuit 120_1 and the second sensing circuit 120_2 has been clearly described in the Figure 1 embodiment and will not be repeated here.

[0075] In this embodiment, the second scintillator 140 converts an X-ray signal (e.g., Figure 1 the X-ray signal SX) into an optical signal (e.g., Figure 1 the optical signal SL). The second sensing circuit 120_2 is located between the second scintillator 140 and the first sensing circuit 120_1. The second scintillator 140 can increase the conversion rate of converting the X-ray signal into an optical signal. In other words, the first sensing circuit 120_1 and the first transparent substrate SUB1 form the first structure STR1. The second sensing circuit 120_2 and the second transparent substrate SUB2 form the second structure STR2. The second structure STR2 is stacked between the second scintillator 140 and the first structure STR1.

[0076] In some embodiments, the second scintillator 140 can be stacked between the second structure STR2 and the first structure STR1.

[0077] Please refer to Figure 3B , Figure 3B which is a schematic configuration diagram of a sensing device according to an embodiment of the present disclosure. In this embodiment, the sensing device 300B includes a first scintillator 110, a second scintillator 140, a first sensing circuit 120_1, a second sensing circuit 120_2, a processor 130 (not shown), a first transparent substrate SUB1, a second transparent substrate SUB2, and a light reflection layer 150. The first sensing circuit 120_1 is disposed on the first transparent substrate SUB1. The second sensing circuit 120_2 is disposed on the second transparent substrate SUB2.

[0078] In this embodiment, the light reflection layer 150 reflects the optical signal from the second scintillator 140. The second scintillator 140 is located between the light reflection layer 150 and the second sensing circuit 120_2. In other words, the second scintillator 140 is stacked between the light reflection layer 150 and the second structure STR2. The second scintillator 140 and the light reflection layer 150 can increase the conversion rate of converting the X-ray signal (e.g., Figure 1 the X-ray signal SX) into an optical signal.

[0079] In some embodiments, the second scintillator 140 can be omitted. The second sensing circuit 120_2 is located between the light reflection layer 150 and the first sensing circuit 120_1. In other words, the second structure STR2 is stacked between the light reflection layer 150 and the first structure STR1. The light reflection layer 150 reflects the optical signal from the first scintillator 110 (e.g., Figure 1optical signal SL).

[0080] Please refer to Figure 4A , Figure 4A FIG. Figure 4A is a schematic diagram of the configurations of a first sensing circuit and a second sensing circuit according to an embodiment of the present disclosure. In this embodiment, the sensing device 400A includes a first scintillator 110, a first sensing circuit 120_1, a second sensing circuit 120_2, a processor 130 (not shown), and a transparent substrate SUB. The transparent substrate SUB has a first surface PL1 and a second surface PL2. The second surface PL2 faces the first surface PL1. The first sensing circuit 120_1 is disposed on the first surface PL1 of the transparent substrate SUB. The second sensing circuit 120_2 is disposed on the second surface PL2 of the transparent substrate SUB.

[0081] In this embodiment, the first sensing circuit 120_1 is located between the first scintillator 110 and the transparent substrate SUB. In other words, the first sensing circuit 120_1 is stacked between the first scintillator 110 and the transparent substrate SUB.

[0082] Please refer to Figure 4B , Figure 4B FIG. Figure 4B is a schematic diagram of the configurations of a first sensing circuit and a second sensing circuit according to an embodiment of the present disclosure. In this embodiment, the sensing device 400B includes a first scintillator 110, a second scintillator 140, a first sensing circuit 120_1, a second sensing circuit 120_2, a processor 130 (not shown), and a transparent substrate SUB. The transparent substrate SUB has a first surface PL1 and a second surface PL2. The second surface PL2 faces the first surface PL1. The first sensing circuit 120_1 is disposed on the first surface PL1 of the transparent substrate SUB. The second sensing circuit 120_2 is disposed on the second surface PL2 of the transparent substrate SUB.

[0083] In this embodiment, the second sensing circuit 120_2 is located between the second scintillator 140 and the first sensing circuit 120_1. The second scintillator 140 can increase the conversion rate of converting an X-ray signal (e.g., Figure 1 X-ray signal SX) into an optical signal. In other words, the second sensing circuit 120_2 is stacked between the second scintillator 140 and the transparent substrate SUB.

[0084] Please refer to Figure 4C , Figure 4CIt is a schematic diagram of the configuration of a first sensing circuit and a second sensing circuit shown in an embodiment of the present disclosure. In this embodiment, the sensing device 400C includes a first scintillator 110, a second scintillator 140, a first sensing circuit 120_1, a second sensing circuit 120_2, a processor 130 (not shown), a transparent substrate SUB, and a light reflection layer 150. The transparent substrate SUB has a first surface PL1 and a second surface PL2. The second surface PL2 faces the first surface PL1. The first sensing circuit 120_1 is disposed on the first surface PL1 of the transparent substrate SUB. The second sensing circuit 120_2 is disposed on the second surface PL2 of the transparent substrate SUB.

[0085] In this embodiment, the light reflection layer 150 reflects the optical signal from the second scintillator 140. The second scintillator 140 is located between the light reflection layer 150 and the second sensing circuit 120_2. In other words, the second scintillator 140 is stacked between the light reflection layer 150 and the second sensing circuit 120_2. The second scintillator 140 and the light reflection layer 150 can increase the conversion rate of converting the X-ray signal into an optical signal.

[0086] In some embodiments, the second scintillator 140 can be omitted. The second sensing circuit 120_2 is located between the light reflection layer 150 and the first sensing circuit 120_1. In other words, the second sensing circuit 120_2 is stacked between the light reflection layer 150 and the transparent substrate SUB. The light reflection layer 150 reflects the optical signal from the first scintillator 110 (e.g., Figure 1 the optical signal SL).

[0087] Please refer to Figure 1 and Figure 5 Figure 5 is a schematic diagram of a first sensing circuit and a second sensing circuit shown in an embodiment of the present disclosure. In this embodiment, the first sensing pixel PXC1 includes a first pixel control circuit PC1. The second sensing pixel PXC2 includes a second pixel control circuit PC2. In the stacking direction DRZ of the second sensing circuit 120_2 and the first sensing circuit 120_1, the projection area of the first pixel control circuit PC1 and the projection area of the second pixel control circuit PC2 at least partially overlap. The stacking direction DRZ is the same as or opposite to the direction of the X-ray signal SX.

[0088] ​In this embodiment, the layout position of the first pixel control circuit PC1 in the first sensing pixel PXC1 is different from the layout position of the second pixel control circuit PC2 in the second sensing pixel PXC2. In the stacking direction DRZ, the projection area of the first pixel control circuit PC1 and the projection area of the second pixel control circuit PC2 partially overlap. In some embodiments, in the stacking direction DRZ, the projection area of the first pixel control circuit PC1 and the projection area of the second pixel control circuit PC2 completely overlap.

[0089] Generally speaking, each of the first pixel control circuit PC1 and the second pixel control circuit PC2 includes at least one transistor. The transistor is, for example, a thin-film transistor (TFT). The transistor is electrically connected to the data line and the scan line. It should be noted that the first pixel control circuit PC1 and the second pixel control circuit PC2 are not light-transmissive. Therefore, in the case where the first pixel control circuit PC1 and the second pixel control circuit PC2 do not overlap with each other at all. The received amount of the optical signal SL of the second sensing pixel PXC2 will decrease.

[0090] It should be noted that in this embodiment, in the stacking direction DRZ, the projection area of the first pixel control circuit PC1 and the projection area of the second pixel control circuit PC2 at least partially overlap. Therefore, the area where the optical signal SL is blocked in the stacking direction DRZ is reduced. The received amount of the optical signal SL of the second sensing pixel PXC2 will increase.

[0091] In this embodiment, the data line and the scan line of the first sensing circuit 120_1 and the data line and the scan line of the second sensing circuit 120_2 at least partially overlap.

[0092] Please refer to Figure 1 and Figure 6 , Figure 6 is a schematic diagram of the calculation of the grayscale value shown according to an embodiment of the present disclosure. In this embodiment, Figure 6 shows the target sensing pixel P' of the second sensing circuit 120_2 and a plurality of overlapping sensing pixels P1 to P4 among the first sensing pixels of the first sensing circuit 120_1. In the stacking direction DRZ, the target sensing pixel P' and the overlapping sensing pixels P1 to P4 partially overlap. In other words, in the stacking direction DRZ, the projection area of the target sensing pixel P' and the projection areas of the overlapping sensing pixels P1 to P4 partially overlap.

[0093] In this embodiment, the processor 130 receives a plurality of grayscale values GR1-GR4 corresponding to the overlapped sensing pixels P1-P4 and the grayscale value GR' of the target sensing pixel P'. The processor 130 generates a weight W1 based on the sum of the grayscale values GR1-GR4 and the grayscale value GR1. The processor 130 then calculates the grayscale value GR1' of the region P1' where the overlapped sensing pixel P1 overlaps the target sensing pixel P' based on the weight W1 and the grayscale value GR' of the target sensing pixel P'.

[0094] The processor 130 generates a weight W2 based on the sum of the grayscale values GR1-GR4 and the grayscale value GR2, and calculates the grayscale value GR2' of the region P2' where the overlapped sensing pixel P2 overlaps with the target sensing pixel P' based on the weight W2 and the grayscale value GR' of the target sensing pixel P'. The processor 130 generates a weight W3 based on the sum of the grayscale values GR1-GR4 and the grayscale value GR3, and calculates the grayscale value GR3' of the region P3' where the overlapped sensing pixel P3 overlaps with the target sensing pixel P' based on the weight W3 and the grayscale value GR' of the target sensing pixel P'. The processor 130 generates a weight W4 based on the sum of the grayscale values GR1-GR4 and the grayscale value GR4, and calculates the grayscale value GR4' of the region P4' where the overlapped sensing pixel P4 overlaps with the target sensing pixel P' based on the weight W4 and the grayscale value GR' of the target sensing pixel P'.

[0095] In this embodiment, the processor 130 may obtain the grayscale values GR1 ′ to GR4 ′ based on formula (1).

[0096]

[0097] In this embodiment, “n” is equal to one of “1”, “2”, “3”, and “4”.

[0098] It should be noted that the target sensing pixel P' is divided into regions P1' to P4' based on the offset D. The unit resolution area of the sensing device 100 can be reduced from the target sensing pixel P' to the region P1'. Therefore, the resolution of the sensing device 100 can be improved.

[0099] Furthermore, the second sensing circuit 120_2 receives the light signal SL via the first sensing circuit 120_1. The intensity of the light signal SL received by the second sensing circuit 120_2 is lower than the intensity of the light signal SL received by the first sensing circuit 120_1. Therefore, in some embodiments, the processor 130 may obtain the grayscale values GR1'-GR4' based on formula (2).

[0100]

[0101] In this embodiment, "λ" is a compensation constant. For example, "λ" can be greater than "1".

[0102] In summary, the processor generates an X-ray image based on the first image data and the second image data. It should be noted that there is an offset between the second sensing circuit and the first sensing circuit. Therefore, there is also the same offset between the first image data and the second image data. The resolution of the X-ray image can be determined based on the offset. In this way, the resolution of the sensing device can be improved. In addition, during the reception of the same X-ray image, both the first sensing circuit and the second sensing circuit can receive optical signals. The first image data and the second image data are generated almost simultaneously. Therefore, the time length required for the processor to generate an X-ray image can be shortened.

[0103] Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present disclosure, rather than to limit them; although the present disclosure has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that: they can still modify the technical solutions recorded in the foregoing embodiments, or perform equivalent replacements on some or all of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present disclosure.

Claims

1. A sensing device for sensing X-ray signals, characterized in that, The sensing device includes: A first scintillator configured to convert the X-ray signal into an optical signal; A first sensing circuit configured to provide first image data based on the optical signal, wherein the first sensing circuit includes a plurality of first sensing pixels, and each of the plurality of first sensing pixels has a first pixel size in a first direction and a second pixel size in a second direction; A second sensing circuit configured to provide second image data based on the optical signal, wherein the first sensing circuit is stacked between the second sensing circuit and the first scintillator, and there is an offset between the second sensing circuit and the first sensing circuit, and the offset is less than the first pixel size in the first direction and less than the second pixel size in the second direction; and A processor coupled to the first sensing circuit and the second sensing circuit and configured to generate an X-ray image based on the first image data and the second image data.

2. The sensing device according to claim 1, wherein The sensing device further includes: A first transparent substrate, wherein the first sensing circuit is disposed on the first transparent substrate; and A second transparent substrate, wherein the second sensing circuit is disposed on the second transparent substrate.

3. The sensing device according to claim 2, wherein The first sensing circuit is located between the first transparent substrate and the first scintillator.

4. The sensing device according to claim 2, wherein The first scintillator is located between the first transparent substrate and the second sensing circuit.

5. The sensing device according to claim 1, wherein The sensing device further includes: A transparent substrate having a first surface and a second surface opposite to the first surface, wherein the first sensing circuit is disposed on the first surface, and wherein the second sensing circuit is disposed on the second surface.

6. The sensing device according to claim 5, wherein, The first sensing circuit is located between the first scintillator and the transparent substrate.

7. The sensing device according to claim 1, wherein The sensing device further includes: A second scintillator configured to convert the X-ray signal into an optical signal, wherein the second sensing circuit is located between the second scintillator and the first sensing circuit.

8. The sensing device according to claim 7, wherein The sensing device further includes: A light reflection layer configured to reflect the optical signal from the second scintillator, wherein the second scintillator is located between the light reflection layer and the second sensing circuit.

9. The sensing device according to claim 1, wherein: Each of the plurality of first sensing pixels includes a first pixel control circuit, Each of the plurality of second sensing pixels of the second sensing circuit includes a second pixel control circuit, and In the stacking direction of the second sensing circuit and the first sensing circuit, the projection areas of the first pixel control circuit and the second pixel control circuit at least partially overlap.

10. The sensing device according to claim 1, wherein: The second sensing circuit includes target sensing pixels, In the stacking direction of the second sensing circuit and the first sensing circuit, the target sensing pixels partially overlap with a plurality of stacked sensing pixels among the plurality of first sensing pixels, and The processor receives a plurality of gray-scale values corresponding to the plurality of stacked sensing pixels and a gray-scale value corresponding to the target sensing pixel, generates a weight based on the sum of the plurality of gray-scale values corresponding to the plurality of stacked sensing pixels and the gray-scale value corresponding to the first stacked sensing pixel, and calculates a gray-scale value of a region where the first stacked sensing pixel and the target sensing pixel are stacked based on the weight and the gray-scale value of the target sensing pixel.

11. The sensing device according to claim 1, wherein: The offset has a first offset size in the first direction and a second offset size in the second direction, The first offset size is equal to one half of the first pixel size, and The second offset size is equal to one half of the second pixel size.

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