Electronic device

By using electro-optical hybrid transmission path and optoelectronic interposer in electronic devices, the signal attenuation and power consumption problems of long-distance transmission between dies in large-size packages are solved, and efficient communication with low power loss and low latency is achieved.

CN120405865APending Publication Date: 2025-08-01ADVANCED SEMICON ENG INC
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Patent Information

Application Number
CN202411104718.5
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Priority Date
2024-01-31
Filing Date
2024-08-13
Publication Date
2025-08-01

AI Technical Summary

Technical Problem

In large-size packages, long-distance data transmission between dies has problems of signal attenuation and power consumption, and the prior art is difficult to effectively improve transmission efficiency.

Method used

The circuit structure is adopted to connect electronic components along different paths, including short-distance circuit paths and long-distance optical paths, and combine the optoelectronic interposer to achieve electrical and optical communication, reducing power consumption and signal loss.

Benefits of technology

By combining the electro-optical transmission path, signal loss and power consumption between electronic components are significantly reduced, and the performance and efficiency of electronic devices are improved.

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Abstract

The invention provides an electronic device. The electronic device includes a plurality of electronic components and a circuit structure connected to the plurality of electronic components. The circuit structure is configured to connect the electronic components adjacent to each other along a first path, and the circuit structure is further configured to connect the electronic components not adjacent to each other along a second path, the second path having a greater length and a higher speed than the first path.
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Description

Technical Field

[0001] The present disclosure generally relates to an electronic device. Background Art

[0002] Currently, data transmission between dies in large-size packages is achieved through multi-layer redistribution layers (RDLs). However, long-distance data transmission between dies suffers from severe signal attenuation and power consumption. Therefore, it is necessary to improve the efficiency of long-distance data transmission between dies in large-size packages. Summary of the Invention

[0003] In one or more arrangements, an electronic device includes a plurality of electronic components and circuitry connected to the plurality of electronic components. The circuitry is configured to connect the electronic components adjacent to each other along a first path, and the circuitry is further configured to connect the electronic components not adjacent to each other along a second path, the second path having a greater length and a higher speed compared to the first path.

[0004] In one or more arrangements, an electronic device includes a plurality of electronic components, an optoelectronic interposer, and a plurality of power modules. The optoelectronic interposer is located at a first side of the plurality of electronic components and is configured to provide electrical and optical transmission between the electronic components. The power modules are located at a second side opposite to the first side of the plurality of electronic components and are configured to supply power to the plurality of electronic components.

[0005] In one or more arrangements, an electronic device includes a plurality of electronic components, a plurality of optoelectronic components, and circuitry. The optoelectronic components are configured to provide electrical communication between the electronic components. The circuitry includes an optical channel configured to optically couple to the optoelectronic components and provide optical communication between the optoelectronic components. Brief Description of the Drawings

[0006] Aspects of the present disclosure are better understood from the following detailed description when read in conjunction with the accompanying drawings. It should be noted that the various features may not be drawn to scale, and the dimensions of the various features may be arbitrarily increased or decreased for the sake of clarity of discussion.

[0007] Figure 1A Is a cross-sectional view of an electronic device according to some arrangements of the present disclosure.

[0008] Figure 1B Is a top view of an electronic device according to some arrangements of the present disclosure.

[0009] Figure 2Ais a cross-section of an electronic device according to some arrangements of the present disclosure.

[0010] Figure 2B is a top view of an electronic device according to some arrangements of the present disclosure.

[0011] Figure 2C is a top view of an electronic device according to some arrangements of the present disclosure.

[0012] Figure 3A is a cross-section of an electronic device according to some arrangements of the present disclosure.

[0013] Figure 3B is a cross-section of an electronic device according to some arrangements of the present disclosure.

[0014] Figure 3C is a cross-section of an electronic device according to some arrangements of the present disclosure.

[0015] Figure 3D is a cross-section of an electronic device according to some arrangements of the present disclosure.

[0016] Figure 4A is a cross-section of an electronic device according to some arrangements of the present disclosure.

[0017] Figure 4B is a top view of an electronic device according to some arrangements of the present disclosure.

[0018] Figure 5 is a cross-section of an electronic device according to some arrangements of the present disclosure.

[0019] Figure 6A 、 Figure 6B 、 Figure 6C 、 Figure 6D 、 Figure 6E 、 Figure 6F 、 Figure 6G 、 Figure 6H and Figure 6I Various stages of an exemplary method for manufacturing an electronic device according to some embodiments of the present disclosure are shown.

[0020] Figure 7A 、 Figure 7B 、 Figure 7C 、 Figure 7D 、 Figure 7E 、 Figure 7F 、 Figure 7G 、 Figure 7H and Figure 7I Various stages of an exemplary method for manufacturing an electronic device according to some embodiments of the present disclosure are shown.

[0021] Figure 8A 、 Figure 8B 、 Figure 8C 、Figure 8D , Figure 8E , Figure 8F and Figure 8G illustrate various stages of an exemplary method for manufacturing an electronic device in accordance with some embodiments of the present disclosure.

[0022] Common reference numerals are used throughout the drawings and the detailed description to indicate the same or similar elements. The present disclosure will become more apparent from the following detailed description in conjunction with the accompanying drawings. DETAILED DESCRIPTION

[0023] Figure 1A is a cross-section of an electronic device 1 in accordance with some arrangements of the present disclosure. The electronic device 1 may include circuitry 10, an optical engine 40, electronic components 50, a bridging component 60, and a photonic component 70. In some arrangements, the electronic device 1 may be or include an extreme large scale panel (ELSP). The electronic device 1 may be or include a data center that includes a large number of processing components, where the distance between the processing components is relatively long.

[0024] The circuit structure 10 can support the electronic components 50. In some arrangements, the circuit structure 10 is configured to provide electrical communication (or electrical transmission) and optical communication (or optical transmission) between at least two or more of the electronic components 50. In some arrangements, the circuit structure 10 is configured to provide electrical communication between the electronic components 50 along one or more transmission paths P1, and to provide optical communication between the electronic components 50 along the transmission path P2. In some arrangements, the circuit structure 10 is further configured to provide electrical communication between the electronic components 50 along one or more transmission paths P3 different from the transmission path P1. In some arrangements, the transmission path P2 is longer than the transmission path P1. In some arrangements, the transmission path P2 is longer than the transmission path P3. In some arrangements, the transmission path P2 is greater than about 10 mm. In some arrangements, the transmission paths P1 and P2 extend in different directions. In some arrangements, the transmission paths P3 and P2 extend in different directions. In some arrangements, the transmission path P1 is generally perpendicular to the transmission path P2. In some arrangements, the transmission path P3 is generally perpendicular to the transmission path P2. In some arrangements, the transmission paths P1 and P3 can be referred to as electrical paths or electrical communication paths, and the transmission path P2 can be referred to as an optical path or an optical communication path. In some arrangements, the circuit structure 10 is configured to connect adjacent electronic components 50 along the transmission path P3, and the circuit structure 10 is further configured to connect non-adjacent electronic components 50 along the transmission path P2, the transmission path P2 having a greater length and a lower power consumption per unit length compared to the transmission path P3. The term "power consumption per unit length" as used hereinafter indicates the consumption of power transmitted by a unit length of the transmission path, which can also be referred to as the power consumption rate. The term "power consumption" as used hereinafter indicates the power consumption between terminals such as: electronic components, electrodes / terminals of electronic components, and terminals of the circuit structure and terminals of electronic components.In some arrangements, the short communication paths (i.e., transmission paths P1 and P3) between adjacent electronic components 50 can be on the order of millimeters (mm) and can be implemented by circuit paths. The longer communication paths (e.g., transmission path P2) between electronic components 50 can be below the centimeter (cm) or meter (m) scale and can be implemented by circuit paths or optical paths. The optical path can provide lower power consumption per unit length compared to the circuit path. In some arrangements, although transmission path P2 has lower power consumption per unit length, due to its greater length, the total power consumption of transmission path P2 may be greater than the total power consumption of transmission paths P1 and P3. For example, the length of transmission path P3 connecting adjacent electronic components 50 can be on the order of millimeters (mm), and the power consumption of transmission path P3 can be approximately 0.5 pJ / bit. The length of transmission path P2 connecting electronic components 50 can be on the order of centimeters (cm) or meters (m), and the power consumption of transmission path P2 can be approximately 2 pJ / bit.

[0025] In some arrangements, circuit structure 10 is configured to connect adjacent electronic components 50 along transmission path P3, and circuit structure 10 is further configured to connect non-adjacent electronic components 50 along transmission path P2, where transmission path P2 has a greater length and a higher speed compared to transmission path P3. When the transmission distance is the same, the signal attenuation and loss of optical transmission (e.g., optical fiber) are relatively less than those of electrical transmission (e.g., copper cable) because electrical transmission is more susceptible to external interference. The speed of optical transmission is higher than that of electrical transmission. For example, the transmission rate of optical transmission can be as high as approximately 100 Gbps, and the transmission rate of electrical transmission can be approximately 40 Gbps. Therefore, transmission path P2 can have a higher speed compared to transmission path P3. In some embodiments, the speed of transmission path P3 can be approximately 50% to 75% of the speed of transmission path P2. Depending on the optical medium (e.g., optical fiber), the speed of light can be approximately 200,000 km / s to approximately 300,000 km / s. Depending on the arrangements and components other than electrical transmission, the electrical speed can be approximately 150,000 km / s to 297,000 km / s.

[0026] In some arrangements, circuit structure 10 includes circuits 20A, 20B, and 30. Circuits 20A and 20B can be referred to as circuit layers, redistribution layers (RDLs), etc. In some arrangements, circuits 20A and 20B can be collectively referred to as circuit 20. Circuit 30 can be referred to as an optical waveguide, an optical channel, etc.

[0027] In some arrangements, circuit 20A is disposed between circuit 30 and electronic component 50 and is configured to connect at least two of the electronic components 50 along transmission path P1 and / or transmission path P3. Circuit 20A may include a dielectric layer and conductive structures formed in the dielectric layer ( Figure 1A not shown). The conductive structures may include interconnect structures, which may include, for example, a plurality of conductive traces and / or a plurality of vias. The interconnect structure may be or include a circuit layer. In some arrangements, transmission path P1 passes through a portion of the conductive structures of circuit 20A to electrically connect to electronic component 50 to provide electrical communication or electrical connection. In some arrangements, transmission path P3 passes through a portion of the conductive structures of circuit 20A to electrically connect to electronic component 50 to provide electrical communication or electrical connection.

[0028] In some arrangements, circuit 30 (or optical channel) is configured to connect to electronic component 50 along transmission path P2. In some arrangements, circuit 30 and two or more of the electronic components 50 vertically overlap. In some arrangements, circuit 30 includes an optical channel. In some arrangements, circuit 30 includes an optical waveguide. Circuit 30 may be formed of or include an optical waveguide material (e.g., a polymer material (e.g., a polymer waveguide), silicon nitride, silicon oxide, or other suitable material). In some arrangements, transmission path P2 passes through a portion of circuit 30 (or optical waveguide) to provide optical communication or optical connection. In some arrangements, transmission path P2 and transmission path P3 are at different heights. In some arrangements, transmission path P3 is closer to electronic component 50 than transmission path P2.

[0029] Circuit 20B may support optical engine 40. In some arrangements, optical engine 40 is disposed between circuit 20A and circuit 20B. Circuit 20B may include a dielectric layer and conductive structures formed in the dielectric layer ( Figure 1A not shown). The conductive structures may include interconnect structures, which may include, for example, a plurality of conductive traces and / or a plurality of vias. The interconnect structure may be or include a circuit layer. In some arrangements, circuit 30 may be formed in the dielectric layer of circuit 20B. In some arrangements, the top surface of circuit 30 may be generally coplanar or aligned with the top surface of circuit 20B. In some arrangements, circuit 20B may be replaced by a substrate in which no conductive structures are formed, and the substrate is configured to support the components / elements above it.

[0030] The optical engine 40 can be disposed on the circuit 30. In some arrangements, the optical engine 40 includes a transducer 410 (or a photon element or a photon component) and an electronic element 420 (or an electronic component). In some arrangements, the optical engine 40 further includes connection elements 430 and 440 and a protective layer 450. In some arrangements, the transducer 410 is connected (e.g., electrically connected) to the electronic element 420 through the connection element 430, and the electronic element 420 is connected (e.g., electrically connected) to the circuit 20A through the connection element 440. In some arrangements, the protective layer 450 encapsulates the connection element 440. The protective layer 450 can be or include an underfill. In some arrangements, the transducer 410 is or includes a photon component, such as a photon integrated circuit (PIC), and the electronic element 420 is or includes an electronic component, such as an electronic integrated circuit (EIC). In some arrangements, the optical engine 40 is or includes a photon component. In some arrangements, N optical engines 40A1 to 40N1 are arranged in a row, and each of the optical engines 40A1 to 40N1 is disposed below a corresponding one of the electronic components 50A1 to 50N1. N can be equal to or greater than 6, 10, 15, 20, or 25. In some arrangements, the distance between the electronic component 50A1 and the electronic component 50N1 can be about 0.35 meters or greater, such as 1 meter or greater.

[0031] In some arrangements, transducer 410 is configured to provide photoelectric conversion and electrically connect circuitry 10 to one or more of electronic components 50. In some arrangements, transducer 410 is disposed between circuitry 30 (or optical channel) and electronic components 50. In some arrangements, transducer 410 is disposed between circuitry 30 and circuitry 20A and is configured to provide photoelectric conversion. In some arrangements, transducer 410 is configured to convey optical signals (or modulated optical signals). For example, transducer 410 may be configured to transmit or receive optical signals. In some embodiments, transducer 410 includes an optical component (e.g., a waveguide) configured to transmit optical signals (e.g., light) received from, for example, a laser diode, an optical fiber, or an optical fiber array. In some arrangements, transducer 410 includes a photonic integrated circuit (PIC) or a photonic die. In some embodiments, transducer 410 may include a laser diode, a receiver, a waveguide, a photodetector, a photodiode, a semiconductor optical amplifier (SOA), a grating coupler, an optical fiber coupling structure, an optical modulator (e.g., a Mach-Zehnder modulator or a microring modulator), or a combination thereof. For example, transducer 410 may include a combination of photonic devices in a circuit and other active and passive optical devices on a single substrate to achieve the desired functionality. In some arrangements, transducer 410 includes vias 410P extending between the top and bottom surfaces of transducer 410. Vias 410P may include one or more conductive vias configured to transmit electrical signals and one or more optical vias configured to transmit optical signals. Vias 410P may be or include through-silicon vias (TSVs).

[0032] In some arrangements, the electronic component 420 is disposed between the circuit 30 and the circuit 20A and is connected to the transducer 410. In some arrangements, the electronic component 420 is closer to the electronic assembly 50 than the transducer 410. In some arrangements, the electronic component 420 is configured to control the modulation of an optical signal. In some arrangements, the electronic component 420 is configured to amplify an electrical signal. In some arrangements, the electronic component 420 includes a plurality of devices, each configured to control the modulation of an optical signal and configured to amplify an electrical signal. In some arrangements, the electronic component 420 is configured to control an optical modulator. In some arrangements, the electronic component 420 is configured to amplify an electrical signal received from the transducer 410 (e.g., the photodetector of the transducer 410). In some arrangements, the photodetector is configured to convert an optical signal into an electrical signal. In some arrangements, the electronic component 420 may include a modulator driver (DRV), a transimpedance amplifier (TIA), or a combination thereof. In some arrangements, the electronic component 420 may include one or more active devices, one or more passive circuit components, and conductive paths that interconnect the active devices and the passive circuit components through the circuit for performing the desired sub-circuit control functions. In some arrangements, the electronic component 420 includes vias 420P that extend between the top and bottom surfaces of the electronic component 420. The vias 420P may include one or more conductive vias configured to transmit electrical signals. The vias 420P may be or include through-silicon vias (TSVs).

[0033] The electronic component 50 can be supported by the circuit structure 10. The electronic component 50 can include terminals 510 configured to be electrically connected to the circuit 20A. In some arrangements, N electronic components 50A1 to 50N1 are arranged in a row above the circuit 20A. N can be equal to or greater than 6, 10, 15, 20, or 25. In some arrangements, the terminal 510 can be or include a conductive pad adjacent to or below the surface (e.g., bottom surface) of the electronic component 50. In some arrangements, the terminal 510 can be or include a conductive pad embedded in and exposed from the surface (e.g., bottom surface) of the electronic component 50. In some arrangements, the terminal 510 is arranged in an array on or adjacent to the surface (e.g., bottom surface) of the electronic component 50. In some arrangements, the terminals 510 of the electronic component 50 can use the Universal Chiplet Interconnect express (UCIe) interconnect protocol to connect the electronic component 50 in the electronic device 1. In some arrangements, the terminals 510 of the electronic component 50 can use the UCIe interconnect protocol to connect the electronic component 50 of the electronic device 1 to a device outside the electronic device 1. In some arrangements, the terminal 510 can replace one or more discrete input / output (I / O) components or I / O dies arranged side by side with the electronic component 50 in the electronic device 1.

[0034] According to some arrangements of the present disclosure, the terminal 510 adjacent to or below the bottom surface of the electronic component 50 can act as an I / O component of the electronic device 1, so discrete I / O components or I / O dies can be omitted. Therefore, the device area occupied by the discrete I / O components or I / O dies can be reduced, the volume of the electronic device 1 can be reduced, and the cost can also be reduced. Additionally, arranging the terminal 510 in an array on or adjacent to the bottom surface of the electronic component 50 instead of using discrete I / O components or I / O dies can significantly increase the off-chip bandwidth. Furthermore, the terminal 510 adopts a Wide I / O interface instead of a SerDes interface, such that the power consumption for transmitting a distance of about 50 cm between the electronic components 50 can be reduced from about 25 pJ / bit to about 2 pJ / bit or even about 0.5 pJ / bit.

[0035] In some arrangements, the electronic component 50 may include electronic components 50A1 to 50N1. In some arrangements, the electronic component 50 may include electronic component 50A1, electronic component 50B1 adjacent to electronic component 50A1, and electronic component 50N1 remote from electronic components 50A1 and 50B1. In some arrangements, the distance between electronic component 50A1 and electronic component 50B1 is less than the distance between electronic component 50A1 and electronic component 50N1. The electronic component 50 may include a processing component. In some arrangements, electronic components 50A1 to 50N1 may independently include an ASIC, an FPGA, a GPU, etc., or a combination thereof. In some arrangements, electronic components 50A1 to 50N1 may independently include a processing core or a processing chiplet.

[0036] In some arrangements, electronic component 50A1 is connected to electronic component 50B1 through electrical communication (or electrical transmission) provided by circuitry 10. In some arrangements, circuitry 10 is configured to provide electrical communication (or electrical transmission) between adjacent electronic components (e.g., electronic component 50A1 and electronic component 50B1) along transmission path P3.

[0037] In some arrangements, electronic component 50A1 is connected to electronic component 50N1 through optical communication (or optical transmission) provided by circuitry 10. In some arrangements, electronic component 50A1 is connected to electronic component 50N1 through a combination of electrical communication (or electrical transmission) and optical communication (or optical transmission) provided by circuitry 10. In some arrangements, circuitry 10 is configured to provide optical communication (or optical transmission) between electronic component 50A1 and electronic component 50N1 along transmission path P2. In some arrangements, circuitry 10 is configured to provide electrical communication (or electrical transmission) between electronic component 50A1 and electronic component 50N1 along transmission path P1. In some arrangements, the optical engine 40A1 may receive an electrical signal from electronic component 50A1 through transmission path P1, the electrical signal may be converted into an optical signal by the optical engine 40A1, and then the optical signal may be transmitted through transmission path P2 to the optical engine 40N1 below electronic component 50N1 and converted into an electrical signal, and the electrical signal is then transmitted through transmission path P1 to electronic component 50N1.

[0038] The bridging component 60 can be disposed between the circuit 30 and the circuit 20A. In some arrangements, the bridging component 60 is configured to electrically connect at least one of the electronic components 50 along the transmission path P3 through the circuit 20A. In some arrangements, the gap between the bridging component 60 and the adjacent electronic component 50 (e.g., the gap between the electronic component 50A1 and the electronic component 50B1) vertically overlaps. In some arrangements, the bridging component 60 does not contact the circuit 30. In some arrangements, the bridging component 60 is not located at the transmission path P3. In some arrangements, the bridging component 60 is adhered to the circuit 20B through the adhesive layer 610. The adhesive layer 610 can be or include a die attach film (DAF). In some arrangements, the bridging component 60 includes a connection element 620 electrically connected to the circuit 20A.

[0039] In some arrangements, the circuit structure 10, the optical engine 40, and the bridging component 60 together construct an optoelectronic interposer. The optoelectronic interposer can be configured to communicate with the electronic components 50 spaced apart by a relatively long distance through a combination of electrical transmission and optical transmission. In some arrangements, the optoelectronic interposer includes the circuit 20A (or RDL), the circuit 30 (or optical waveguide), the optical engine 40, and the bridging component 60. In some arrangements, the optoelectronic interposer is disposed at one side (the first side or the upper side) of the electronic component 50 and is configured to provide electrical transmission (or electrical communication) and optical transmission (or optical communication) between the electronic components 50. In some arrangements, the optoelectronic interposer includes a photonic component (e.g., the optical engine 40) and an optical channel (e.g., the circuit 30) connecting the photonic components. In some arrangements, the optical channel (e.g., the circuit 30) is configured to be connected to an optical component outside the electronic device 1.

[0040] The photonic component 70 can be disposed between the circuit 30 and the circuit 20A and is optically coupled to the circuit 30. In some arrangements, the photonic component 70 is configured to transmit an optical signal to the circuit 30. In some arrangements, the photonic component 70 is configured to receive an optical signal from the circuit 30. In some arrangements, the photonic component 70 is further configured to provide photoelectric conversion and is electrically connected to the circuit 20A. In some arrangements, the photonic component 70 is configured to convert an optical signal into an electrical signal and then transmit the electrical signal to the circuit 20A. In some arrangements, the photonic component 70 is configured to receive an electrical signal from the circuit 20A and convert the electrical signal into an optical signal.

[0041] Figure 1B Is a top view of the electronic device 1 according to some arrangements of the present disclosure. In some arrangements, Figure 1A Shows a cross-section along Figure 1B The line 1A-1A' in

[0042] In some arrangements, the electronic device 1 includes an array of electronic components 50 arranged in columns and rows, and an array of optical engines 40 arranged in columns and rows. In some arrangements, there are N columns and m rows in the array. In some arrangements, referring to Figure 1A , the electronic component 50A1 can be connected to the electronic component 50Nm via electrical communication through the transmission path P1 and optical communication through the transmission path P2. In some arrangements, the optical communication between the electronic component 50A1 and the electronic component 50Nm involves optoelectronic conversion performed by the optical engine 40A1 to convert an electrical signal into an optical signal and transmit the optical signal from the optical engine 40A1 to the optical engine 40Nm through the circuit 30, and optoelectronic conversion performed by the optical engine 40Nm to convert the optical signal into an electrical signal. In some arrangements, referring to Figure 1A , the electronic component 50Am can be connected to the electronic component 50N1 via electrical communication through the transmission path P1 and optical communication through the transmission path P2. In some arrangements, the optical communication between the electronic component 50Am and the electronic component 50N1 involves optoelectronic conversion performed by the optical engine 40Am to convert an electrical signal into an optical signal and transmit the optical signal from the optical engine 40Am to the optical engine 40N1 through the circuit 30, and optoelectronic conversion performed by the optical engine 40N1 to convert the optical signal into an electrical signal.

[0043] In some arrangements, the circuit 30 includes an optical mesh network. In some arrangements, the circuit 30 includes a grid structure. In some arrangements, the circuit 30 includes a single-layer grid structure. In some arrangements, the optoelectronic interposer includes an optical waveguide network (e.g., the circuit 30) for optical transmission or optical communication. In some arrangements, the circuit 30 includes an optical waveguide network (or an optical grid structure) that includes a plurality of waveguides 30a1 to 30ai and a plurality of waveguides 30b1 to 30bi passing through the waveguides 30a1 to 30ai. In some arrangements, the intersections of the waveguides are positioned below the optical engines 40. In some arrangements, an intersection is formed by two waveguides that cross and stack on each other. The network of intersections formed by the cross and stacked waveguides can be referred to as an optical mesh network. In some arrangements, the intersections are formed in a single layer by waveguides that are directly connected to each other and / or integrally formed. The network of intersections formed in a single layer can be referred to as a single-layer optical grid structure. In some arrangements, each of the intersections of the waveguides 30a1 to 30ai and the waveguides 30b1 to 30bi is positioned below and optically coupled to a corresponding one of the optical engines 40 to receive an optical signal from or transmit an optical signal to the corresponding one of the optical engines 40.

[0044] In some situations, when long - distance communication between electronic components is required in a relatively large device or package, signal transmission through a circuit path (e.g., RDL, fan - out structure, etc.) may suffer from relatively large power loss and high latency. To solve the relatively large power loss problem, a relatively high power can be supplied at the beginning of the circuit path; however, this correspondingly increases the power consumption. In contrast, according to some arrangements of the present disclosure, in the case of a design that integrates long - distance transmission through an optical path (e.g., transmission path P2) and short - distance transmission through a circuit path (e.g., transmission paths P1 and P3), since the power loss of optical transmission is relatively low, the signal loss and power consumption of the transmission between the electronic components 50 adopting the aforementioned combination of long - distance optical transmission and short - distance electrical transmission can be significantly reduced, and thus the performance of the electronic device 1 can be improved.

[0045] Additionally, according to some arrangements of the present disclosure, in the case of a design where the optoelectronic interposer includes the RDL of the circuit 20 (or circuit 20A), the optical mesh network of the circuit 30, and the transducers 410 (or optical engines 40) arranged corresponding to the network of the circuit 30, a large number of electronic components 50 can be arranged in an array, where the corresponding transducers 410 (or corresponding optical engines 40) are placed corresponding to the corresponding electronic components 50. Thus, although the electronic components 50 occupy a relatively large device area, the combination of short - distance electrical transmission through the circuit path and long - distance optical transmission through the optical path between the electronic components 50 can be achieved by the optoelectronic interposer to achieve the performance of low power loss and low latency.

[0046] Furthermore, according to some arrangements of the present disclosure, in the case of a design where the optoelectronic conversion element (transducer 410 or optical engine 40) is placed directly below the corresponding electronic component 50, the transmission path P1 for electrical transmission between the electronic component 50 and the corresponding optoelectronic conversion element is defined by the vertical distance between the electronic component 50 and the optoelectronic conversion element. Therefore, the length of the circuit path can be relatively short compared to the length of the optical path between the electronic components 50 that are spaced relatively far apart from each other. Additionally, according to some arrangements of the present disclosure, the vertical distance between the electronic component 50 and the optoelectronic conversion element can be defined by the thickness of the circuit 20A, which is an RDL having at most two conductive layers. Thus, the length of the circuit path between the electronic component 50 and the optoelectronic conversion element is significantly reduced.

[0047] Moreover, according to some arrangements of the present disclosure, both the transmission path P3 for electrical communication between adjacent electronic components 50 and the transmission path P1 for electrical communication between the electronic component 50 and the corresponding optical engine 40 or transducer 410 pass through a part of the circuit 20 or 20A of the circuit structure 10. Therefore, the layer or thickness of the conductive structure for electrical communication can be reduced, which further facilitates the reduction of the size of the electronic device 1.

[0048] In addition, according to some arrangements of the present disclosure, electrical communication between adjacent electronic components 50 can be achieved through a transmission path P3 that passes through or utilizes a bridging component 60 rather than a conductive interconnect structure within circuit 20A. Accordingly, the number of layers within circuit 20A can be reduced, and thus the thickness of circuit 20A can be reduced, which is beneficial for reducing the device size. Additionally, according to some arrangements of the present disclosure, electrical communication between adjacent electronic components 50 can be achieved through a transmission path P3 that passes through or utilizes a conductive layer of the conductive interconnect structure within circuit 20A and does not pass through or utilize a bridging component 60. Accordingly, the space saved by not providing a bridging component 60 can be used to accommodate additional electronic components, and thus, the functionality and performance of the electronic device 1 can be improved.

[0049] Figure 2A FIG. 6 is a cross-sectional view of an electronic device 2 according to some arrangements of the present disclosure. Figure 2B FIG. 7 is a top view of an electronic device 2 according to some arrangements of the present disclosure. Figure 2C FIG. 7 is a top view of an electronic device 2 according to some arrangements of the present disclosure. In some arrangements, Figure 2A shows a cross-section along Figure 2B and / or Figure 2C line 2A-2A' in FIGS. 6. The electronic device 2 is similar to the electronic device 1 in FIGS. 1 and 2, and the differences therebetween are described below. Figure 1A and Figure 1B 2, and the differences therebetween are described below.

[0050] In some arrangements, the electronic device 2 further includes one or more optical components 72, a power module 80, a cooling device 90, encapsulants 91 and 93, guide posts 20P, 30P, 91P and 91P', an underfill 92, and connection elements 94 and 95. In some arrangements, the optical engine 40 may include a structure that is the same as or similar to the structures shown in FIGS. 1 and 2. Figure 1A and 1B 2.

[0051] In some arrangements, circuit 20A includes conductive structures 20m1 and 20m2. In some arrangements, conductive structure 20m1 includes conductive traces or layers and vias. Conductive structure 20m`1 may be configured to provide electrical communication along transmission path P1. In some arrangements, conductive structure 20m1 electrically connects electronic component 50 to optical engine 40. In some arrangements, conductive structure 20m2 includes conductive posts or vias. Conductive structure 20m2 may be configured to provide electrical communication along transmission path P3. In some arrangements, conductive structure 20m2 electrically connects electronic component 50 to bridging component 60.

[0052] In some arrangements, the via 20P extends between the top and bottom surfaces of the circuit 20B. The vias 20P, 91P, and 91P' may be or include conductive vias. In some arrangements, the via 20P may be formed of or include a conductive material (e.g., metal, such as copper (Cu)). In some arrangements, the via 20P electrically connects the via 91P to the photonics assembly 70.

[0053] In some arrangements, the via 30P extends between the top and bottom surfaces of the circuit 20B. In some arrangements, the via 30P may be or include an optical via. In some arrangements, the via 30P optically couples the circuit 30 to the photonics assembly 70. In some arrangements, as Figure 2B shown, the circuit 30 includes an optical waveguide network that includes crossing waveguides. In some arrangements, the circuit 30 includes optical channels that include an optical grating structure. In some arrangements, the circuit 30 (or the optical channels) is optically coupled to a photonics assembly (e.g., the optical engine 40) and is configured to connect to the electronic component 50 along the transmission path P2. In some arrangements, the circuit layer 20A is disposed between the optical channel (e.g., the circuit 30) and the electronic component 50 and is configured to electrically connect to the electronic component 50 along the transmission path P3. In some arrangements, the bridging component 60 is located between the circuit layer 20A and the optical channel (e.g., the circuit 30) and is configured to electrically connect to the electronic component 50 along the transmission path P3.

[0054] The electronic component 50 may include a processing component, a memory component, etc., or a combination thereof. In some arrangements, the electronic components 50A, 50B, 50C, 50D, 50E, and 50F may independently include an ASIC, an FPGA, a GPU, etc., or a combination thereof. In some arrangements, the electronic component 50M may include a memory component, e.g., HBM.

[0055] The optical component 72 may be optically coupled to the photonics assembly 70. The optical component 72 may be configured to optically couple the electronic device 2 to a device external to the electronic device 2. In some arrangements, the optical component 72 is or includes a fiber array unit (FAU). In some arrangements, the electronic device 2 includes a plurality of optical components 72, each configured to couple a corresponding optical signal. In some arrangements, the electronic device 2 includes one optical component 72, and the circuit 20A may include a modulator circuit configured to divide an optical signal into a plurality of optical signals having different optical properties (e.g., waveguides, polarization, etc.).

[0056] The power supply module 80 can be configured to supply power to the electronic component 50. In some arrangements, each of the power supply modules 80 is connected to a corresponding one of the electronic components 50. In some arrangements, the power supply module 80 is connected to the circuit 20B through the connection element 95. The connection element 95 can be or include C4 bumps. In some arrangements, the circuit 20A (or RDL) is disposed between the electronic component 50 and the power supply module 80. In some arrangements, each of the power supply modules 80 is below each of the electronic components 50 and is configured to supply the modulated power to each of the electronic components. In some arrangements, the power supply module 80 is configured to supply power to the electronic component 50 through the guide post 91P' between the bridging components 60. The power path for the modulated power can pass through the circuit 20B, the guide post 91P', and the circuit 20A. The power supply module 80 can be or include a voltage regulation module (VRM).

[0057] The cooling device 90 can be disposed above the electronic component 50. In some arrangements, the cooling device 90 contacts the electronic component 50. The cooling device 90 is configured to dissipate heat from the electronic component 50. The cooling device 90 can be or include a water cooling plate.

[0058] In some arrangements, the encapsulant 91 encapsulates the optical engines 40A, 40B, 40C, 40D, 40E, and 40F, the bridging component 60, and the guide post 91P. In some arrangements, the encapsulant 91 further encapsulates the connection elements 440 and 620 and the adhesive layer 610. In some arrangements, the guide post 91P can be formed of or include a conductive material (e.g., metal, such as copper (Cu)). In some arrangements, at least one of the guide posts 91P is electrically connected to the guide post 20P. In some arrangements, some of the guide posts 91P can act as heat pipes for heat dissipation. The heat pipes can be disposed between the optical engines 40. In some arrangements, the optoelectronic interposer (e.g., the combination of the circuit structure 10, the optical engine 40, and the bridging component 60) includes transducers integrated within the optical engine 40 and arranged in the same layer, and the heat pipes (e.g., the guide posts 91P) are disposed between the transducers.

[0059] In some arrangements, the connection element 94 electrically connects the electronic component 50 to the circuit 20A, and the underfill 92 encapsulates the connection element 94. In some arrangements, the connection element 94 can be or include micro bumps. Each of the connection elements 94 can include portions 94a and 94b. The portion 94a can be a conductive pad or post, and the portion 94b can be a solder bump. In some arrangements, the encapsulant 93 encapsulates the electronic components 50A to 50F and 50M and the underfill 92.

[0060] In some arrangements, the cooling device 90 is disposed on the encapsulant 93 and contacts the exposed surface 501 of the electronic component 50.

[0061] In some arrangements, with reference to Figure 2C , optical communication between electronic components 50 may be provided by various transmission paths. In some arrangements, as Figure 2A and 2C shown, electronic component 50A may be optically communicatively connected to electronic component 50F via an optical communication through transmission path P2. In some arrangements, electronic component 50A may be optically communicatively connected to electronic component 50Z via an optical communication through transmission path P2A, which passes through two waveguide strips of an optical grid structure (e.g., circuit 30). In some arrangements, transmission path P2A passes through waveguide strips between optical engine 40A and optical engine 40F and waveguide strips between optical engine 40F and optical engine 40Z. In some arrangements, electronic component 50A may be optically communicatively connected to electronic component 50X via an optical communication through transmission path P2B, which passes through three waveguide strips of an optical grid structure (e.g., circuit 30). In some arrangements, transmission path P2B passes through waveguide strips between optical engine 40A and optical engine 40B, waveguide strips between optical engine 40B and optical engine 40Y (which is located below electronic component 50Y), and waveguide strips between optical engine 40Y and optical engine 40X. In some arrangements, electronic component 50A may be electrically communicatively connected to electronic component 50B via an electrical communication through transmission path P3. In some arrangements, electronic component 50A may be electrically communicatively connected to electronic component 50W via an electrical communication through transmission path P3A.

[0062] According to some arrangements of the present disclosure, the power module 80, the optical engine 40, and the electronic components 50 are vertically stacked, so that the device area in the horizontal direction can be reduced. Additionally, the cooling device 90 is further vertically stacked on the electronic components 50 and contacts the electronic components, so that heat dissipation can be achieved without increasing the device area in the horizontal direction.

[0063] Figure 3A is a cross-section of an electronic device 3A according to some arrangements of the present disclosure. Figure 3B is a cross-section of an electronic device 3A according to some arrangements of the present disclosure. In some arrangements, Figure 3A and Figure 3B are cross-sections along different cross-section lines in Figure 1B . For example, Figure 3B may be a cross-section along line 1A-1A' in Figure 1B , and Figure 3A may be a cross-section along another line that is generally parallel to line 1A-1A' in Figure 1B . The electronic device 3A is similar to the electronic device 1 in Figure 1A and Figure 1B , and the differences therebetween are described below.

[0064] In some arrangements, each of the electronic components 50 may include or be integrated with an electronic element (e.g., an EIC that is the same as or similar to the electronic element 420 shown in [[ID=6 and ​ ). In some arrangements, the electronic component 50 includes a processing component (e.g., an ASIC) and an EIC integrated with the processing component.

[0065] In some arrangements, the electronic device 3A includes connection elements 4301 and 4302 connected to transducers 410 (e.g., transducers 410A1 and 410B1 to 410N1). In some arrangements, referring to ​ , the circuit 30 (or optical channel) is disposed between the photon component (e.g., the transducer 410) and the electronic component 50 and is optically coupled to the photon component (e.g., the transducer 410). In some arrangements, the transducer 410 is directly connected to the circuit 30. In some arrangements, the transducer 410 is electrically connected to the circuit 20 through the connection element 4301 shown in ​ , and the transducer 410 is optically coupled to the circuit 30 through the connection element 4302 shown in ​ . In some arrangements, the connection elements 4301 and 4302 are formed of or include different materials. In some arrangements, the connection element 4301 is or includes a conductive material. In some arrangements, the connection element 4302 is or includes an optical waveguide material. In some arrangements, the electronic component 50 is electrically connected to the transducer 410 through the circuit 20 and the connection element 4301 along the transmission path P1. In some arrangements, the transducer 410 is optically coupled to the circuit 30 through the connection element 4302.

[0066] According to some arrangements of the present disclosure, the EIC is integrated in the electronic component 50, and an optical mesh network (e.g., the circuit 30) is disposed between the electronic component 50 and the transducer 410, so that an interconnection structure (e.g., a conductive layer or a wiring structure) outside the electronic component 50 and electrically connected between the electronic component 50 and the electronic element 420 of the optical engine 40 can be omitted. For example, the conductive layer or the wiring structure in the circuit 20 for electrically connecting between the electronic component 50 and the transducer 410 of the optical engine 40 can be omitted. Therefore, the number of conductive layers in the circuit 20 can be reduced, and thus the thickness of the circuit 20 can be reduced. Additionally, according to some arrangements of the present disclosure, in the case where the optical channel (e.g., the circuit 30) is formed on or in the circuit 20, an additional circuit (e.g., ​ the circuit 20B shown in can be omitted, so that the length of the power supply path between the electronic component 50 and the power supply module disposed below the photon component (e.g., the transducer 410) can be reduced, which further reduces power consumption.

[0067] ​ A cross-section of an electronic device 3C according to some arrangements of the present disclosure. ​ A cross-section of an electronic device 3C according to some arrangements of the present disclosure. In some arrangements, ​ and ​ are cross-sections along different cross-sectional lines of the electronic device 3C. The electronic device 3C is similar to ​ the electronic device 3A in , and the differences therebetween are described below.

[0068] In some arrangements, each of the electronic components 50 may include an electronic element (e.g., an EIC the same as or similar to the electronic element 420 shown in ​ and ​ ), or be integrated therewith, and each of the electronic components 50 may be connected to each of the transducers 410 (e.g., transducers 410A, 410B, 410C, 410D, 410E, and 410F). In some arrangements, the electronic component 50 includes a processing component (e.g., an ASIC) and an EIC integrated with the processing component.

[0069] In some arrangements, the electronic device 3C further includes encapsulants 91 and 93, underfills 92, and connection elements 94. The circuit 20 includes conductive structures 20m1 and 20m2. The above elements are similar to ​ the elements shown in , and their descriptions are omitted below.

[0070] ​ A cross-section of an electronic device 4 according to some arrangements of the present disclosure. ​ A top view of an electronic device 4 according to some arrangements of the present disclosure. In some arrangements, ​ shows a cross-section along the line 4A - 4A' in ​ . The electronic device 4 is similar to ​ and ​ the electronic device 2 in , and the differences therebetween are described below.

[0071] In some arrangements, the circuit structure 10 further includes a circuit 20C between the electronic component 50 and a power supply module 80 (e.g., power supply modules 80A, 80B, 80C, and 80D). In some arrangements, the electronic device 4 further includes a connection element 96 that connects the electronic component 50 to the circuit 20C. Each of the connection elements 96 may include portions 96a and 96b. The portion 96a may be a conductive pad or post, and the portion 96b may be a solder bump.

[0072] In some arrangements, at least the circuit structure 10, the optical engine 40, and the bridging component 60 may jointly construct an optoelectronic interposer. In some arrangements, the guide post 91P (or thermal pipe) is embedded in the optoelectronic interposer and is configured to dissipate heat from the electronic component 50 to the cooling device 90.

[0073] In some arrangements, the electronic component 50 includes active surfaces on opposite sides. In some arrangements, the optical engine 40 and the bridging component 60 are located at one side (e.g., the first side or the upper side) of the electronic component 50 and are connected to that side. In some arrangements, the power module 80 is located at the opposite side (e.g., the second side or the lower side) of the electronic component 50 and is connected to that opposite side. In some arrangements, the power module 80 is configured to supply power to the electronic component to 50 along a power path V1 between the power module 80 and the electronic component 50. In some arrangements, the modulated power may be provided along a power path V1 that is generally parallel to a transmission path P1 (or circuit path) of the electrical transmission. In some arrangements, the transmission path P2 (or optical path) of the optical transmission is longer than the transmission path P1 (or circuit path) and the power path V1. According to some arrangements of the present disclosure, in the case of a design where the circuit 30 (or optical channel), the optical engine 40, and the bridging component 60 are located on one side of the electronic component 50 and the power module 80 is located on the opposite side of the electronic component 50, the power path V1 that does not pass through the space between the optical engine 40 and / or the bridging component 60 is further reduced. Additionally, the structure of the power delivery network within the circuit 20C can be simplified without having to reserve space for placing or forming the optical channel. Therefore, the power consumption can be further reduced, and the overall structure and manufacturing process can be simplified.

[0074] In some arrangements, the top surface of the optical engine 4 has a tapered profile or inclined surface that contacts the waveguide material of the circuit 30. In some arrangements, a patterned layer 30' (e.g., a patterned silicon layer) is further disposed between the circuit 20B and the circuit 30.

[0075] ​ Is a cross-section of the electronic device 5 according to some arrangements of the present disclosure. The electronic device 5 is similar to ​ and ​ The electronic device 4 in, and the differences therebetween are described below.

[0076] In some arrangements, the electronic device 5 includes an optoelectronic component 40I and an electronic component 50P. In some arrangements, the optoelectronic component 40I is configured to provide optoelectronic conversion at the transmission path P2 and provide electrical communication between adjacent electronic components 50 (e.g., electrical communication from the electronic component 50A to the electronic component 50I, where the electronic component 50I is, for example, an I / O component). In some arrangements, the electronic component 50P is disposed between the optoelectronic components 40I. The electronic component 50P may be or include a passive component, such as a capacitor, an inductor, or other suitable passive component. In some arrangements, the electronic component 50P is or includes a power regulation element (e.g., a voltage regulation module (VRM)). In some arrangements, the power module 80 is disposed below the circuit 20B and is configured to supply power to the electronic components 50 through a power regulation element (e.g., the electronic component 50P). In some arrangements, the electronic component 50P may include at least one viaduct 50PV extending between the top and bottom surfaces of the electronic component 50P, and the power path V1 passes through the circuit 20B and the power regulation element (e.g., the viaduct 50PV of the electronic component 50P).

[0077] In some arrangements, the optoelectronic component 40I includes a transducer (e.g., the transducer of the optical engine 40) and a bridging element integrated with the transducer (e.g., the bridging component 60). In some arrangements, the optoelectronic component 40I includes the optical engine 40 and the bridging component 60 integrated with the optical engine 40. In some arrangements, the bridging component 60 is configured to provide electrical communication between the electronic components 50A1 and 50B1, and the optical engine 40 (or the transducer) is configured to provide optoelectronic conversion for optical communication between the electronic components 50A1 and 50N1. In some arrangements, the bridging component 60 may be or include a patterned conductive layer or a patterned conductive trace formed on the top surface of the optical engine 40. In some arrangements, the circuit 20B includes an optical channel (e.g., the circuit 30), which is configured to be optically coupled to the optoelectronic component 40I and provide optical communication between the optoelectronic components 40I.

[0078] ​ , ​ , ​ , ​ , ​ , ​ , ​ , ​ and ​ illustrate various stages of an exemplary method for manufacturing an electronic device 2 according to some embodiments of the present disclosure.

[0079] Reference ​, a carrier 1000 can be provided, and a circuit 20B can be formed on the carrier 1000. The circuit 20B can include a conductive structure, and the conductive structure includes at least conductive posts 20P. The conductive posts 20P can be or include conductive posts.

[0080] Reference ​ , a circuit 30 can be formed in the circuit 20B and exposed from the surface of the circuit 20B, and conductive posts 30P can be further formed in the circuit 20B. The conductive posts 30P can be or include optical posts. In some arrangements, the circuit 30 is formed in a dielectric layer of the circuit 20B. The circuit 30 can be or include an optical waveguide, an optical channel, etc. In some arrangements, the conductive posts 30P and the circuit 30 can be formed by removing a portion of the circuit 20B to form a recess and a via, and then forming an optical waveguide material in the recess to form the circuit 30 and forming an optical waveguide material in the via to form the conductive posts 30P. In some other arrangements, the circuit 30 can be formed on the top surface of the circuit 20B, for example, by deposition.

[0081] Reference ​ , conductive posts 91P can be formed on the circuit 20B. The conductive posts 91P can be or include metal posts, for example, Cu posts.

[0082] Reference ​ , an optical engine 40 and a bridging component 60 can be formed on the circuit 20B and between the conductive posts 91P, and a capsule 91 can be formed to encapsulate the optical engine 40 and the bridging component 60. In some arrangements, the optical engine 40 is formed above the circuit 30 and optically coupled to the circuit 30. In some arrangements, the bridging component 60 is adhered to the circuit 20B through an adhesive layer 610. In some arrangements, the connecting elements 620 of the bridging component 60 are exposed by the capsule 93.

[0083] Reference ​ , a circuit 20A can be formed on the capsule 91 and electrically connected to the optical engine 40 and the bridging component 60.

[0084] Reference ​ , an electronic component 50 can be formed above the circuit 20A and connected to the circuit 20A through a connecting element 94, and a bottom fill 92 can be formed to encapsulate the connecting element 94.

[0085] Reference ​ , a capsule 93 can be formed to encapsulate the electronic component 50 and the bottom fill 92. In some arrangements, a capsule material can be formed above the electronic component 50 and the bottom fill 92 and cover the electronic component 50 and the bottom fill 92, and a grinding operation can be performed on the capsule material to expose the top surface of the electronic component 50 to form the capsule 93.

[0086] Reference ​ , the carrier 1000 can be removed, and​ The structure shown in

[0087] Reference ​ , ​ The structure shown in can be flipped, the power module 80 can be connected to the circuit 20B through the connecting element 95, the photon component 70 can be formed to be connected to the guide posts 20P and 30P, and the optical component 72 can be formed to be optically coupled to the photon component 70. In some arrangements, the power module 80 is attached to the circuit 20B by surface mount technology (SMT). Thus, an ​ and 2B electronic device 2 shown in

[0088] ​ , ​ , ​ , ​ , ​ , ​ , ​ , ​ and ​ show various stages of an exemplary method for manufacturing an electronic device 3C according to some embodiments of the present disclosure.

[0089] Reference ​ , a carrier 1000 can be provided, and the transducer 410, the bridging component 60, and the photon component 70 can be disposed on or attached to the carrier 1000. In some arrangements, the transducer 410 and the photon component 70 are formed or disposed on the carrier 1000. In some arrangements, the bridging component 60 is adhered to the carrier 1000 through the adhesive layer 610.

[0090] Reference ​ , a capsule 91 can be formed to encapsulate the transducer 410, the bridging component 60, and the photon component 70. In some arrangements, the encapsulation material can be formed above the transducer 410, the bridging component 60, and the photon component 70 and cover the transducer 410, the bridging component 60, and the photon component 70, and a grinding operation can be performed on the encapsulation material to expose the top surface of the photon component 70, the connecting elements 4301 and 4302 of the transducer 410, and the connecting element 620 of the bridging component 60 to form the capsule 91.

[0091] Reference ​ , the circuit 30 can be formed above the capsule 91. In some arrangements, the circuit 30 is optically coupled to the transducer 410 and the photon component 70.

[0092] Reference ​ and ​ showing different cross-sections along different cross-sectional lines, the circuit 20 can be formed above the circuit 30. As ​As shown, the conductive structure 20m1 of circuit 20 may be formed above and spaced apart from circuit 30. As ​ shown, in a different cross-sectional perspective view, circuit 20 may be electrically connected to transducer 410, bridging assembly 60, and photonics assembly 70.

[0093] Referring ​ to, electronic component 50 may be disposed above circuit 20. In some arrangements, electronic component 50 may be connected to circuit 20 via connection element 94. In some arrangements, underfill 92 may be formed to encapsulate connection element 94.

[0094] Referring ​ to, encapsulant 93 may be formed to encapsulate electronic component 50 and underfill 92. In some arrangements, encapsulant material may be formed above and cover electronic component 50 and underfill 92, and a grinding operation may be performed on the encapsulant material to expose the top surface of electronic component 50 to form encapsulant 93.

[0095] Referring ​ to, cooling device 90 may be attached to electronic component 50.

[0096] Referring ​ to, ​ the structure shown in may be flipped, carrier 1000 may be removed, and optical component 72 may be attached to photonics assembly 70. In some arrangements, cooling device 90 may act as a support carrier when attaching optical component 72 to photonics assembly 70. Thus, an ​ electronic device 3C as shown in may be formed.

[0097] ​ 、 ​ 、 ​ 、 ​ 、 ​ 、 ​ and ​ show various stages of an exemplary method for manufacturing an electronic device 4 according to some embodiments of the present disclosure.

[0098] Referring ​ to, carrier 1000 may be provided, and circuit 20C may be formed on carrier 1000.

[0099] Referring ​ to, electronic component 50 may be formed above circuit 20C and connected to circuit 20C via connection element 96, and encapsulant 93 may be formed to encapsulate electronic component 50. In some arrangements, encapsulant material may be formed above and cover electronic component 50, and a grinding operation may be performed on the encapsulant material to expose connection element 94 of electronic component 50.

[0100] Reference ​ , the circuit 20A can be formed on the electronic component 50 and the encapsulant 93, and the guide post 91P can be formed on the circuit 20A. The guide post 91P can be or include a metal guide post, for example, a Cu guide post.

[0101] Reference ​ , the optical engine 40 and the bridge component 60 can be formed between the circuit 20A and the guide post 91P, and the encapsulant 91 can be formed to encapsulate the optical engine 40 and the bridge component 60. In some arrangements, the optical engine 40 is formed above the circuit 20A and electrically connected to the circuit 20A. In some arrangements, the bridge component 60 is electrically connected to the circuit 20A through the connection element 620.

[0102] Reference ​ , the circuit 30 can be formed on the encapsulant 91 and optically coupled to the optical engine 40, and the circuit 20B can be formed on the encapsulant 91. In some arrangements, reference ​ , the top surface of the optical engine 40 can be etched to form a tapered profile or an inclined surface, and the circuit 30 is formed on the top surface of the optical engine 40. In some arrangements, reference ​ , the patterned layer 30' can be further formed on the circuit 30 by depositing a material (for example, a silicon layer), and then patterning the material to form the patterned layer 30' on the circuit 30.

[0103] Reference ​ , the optical component 72 can be attached to the circuit 30, and the cooling device 90 can be disposed above the circuit 20B.

[0104] Reference ​ , ​ The structure shown in ​ and 4B can be flipped, the carrier 1000 can be removed, and the power module 80 can be connected to the circuit 20C through the connection element 95. In some arrangements, when the power module 80 is disposed above the circuit 20C, the cooling device 90 can act as a support carrier. Thus, the electronic device 4 shown in

[0105] Unless otherwise specified, spatial descriptions such as "above", "below", "on", "left", "right", "down", "top", "bottom", "vertical", "horizontal", "side", "higher than", "lower than", "upper", "above", "below", etc. are indicated relative to the orientation shown in the figure. It should be understood that the spatial descriptions used herein are for illustrative purposes only, and the embodiments of the structures described herein can be spatially arranged in any orientation or manner, provided that the advantages of the embodiments of the present disclosure are not deviated due to such arrangements.

[0106] As used herein, the terms "approximately", "substantially", "substantive", "about", and "circa" are used to describe and account for minor variations. When used in connection with an event or circumstance, these terms can refer to instances where the event or circumstance occurs precisely as well as instances where the event or circumstance occurs very nearly. For example, when used in connection with a numerical value, these terms can refer to a range of variation that is less than or equal to ±10% of the numerical value, such as less than or equal to ±5%, less than or equal to ±4%, less than or equal to ±3%, less than or equal to ±2%, less than or equal to ±1%, less than or equal to ±0.5%, less than or equal to ±0.1%, or less than or equal to ±0.05%. For example, if a first numerical value is within a range of variation that is less than or equal to ±10% of a second numerical value, such as less than or equal to ±5%, less than or equal to ±4%, less than or equal to ±3%, less than or equal to ±2%, less than or equal to ±1%, less than or equal to ±0.5%, less than or equal to ±0.1%, or less than or equal to ±0.05%, then the first numerical value can be considered to be "substantially" the same as or equal to the second numerical value. For example, "substantially" vertical can refer to an angular range of variation that is less than or equal to ±10° relative to 90°, such as less than or equal to ±5°, less than or equal to ±4°, less than or equal to ±3°, less than or equal to ±2°, less than or equal to ±1°, less than or equal to ±0.5°, less than or equal to ±0.1%, or less than or equal to ±0.05°.

[0107] If the displacement amount between two surfaces is not greater than 5 μm, not greater than 2 μm, not greater than 1 μm, or not greater than 0.5 μm, then the two surfaces can be considered to be coplanar or substantially coplanar. If the displacement amount between the highest point and the lowest point of a surface does not exceed 5 μm, does not exceed 2 μm, does not exceed 1 μm, or does not exceed 0.5 μm, then the surface can be considered to be substantially flat.

[0108] As used herein, unless the context clearly indicates otherwise, the singular forms "a / an" and "the" can include plural referents.

[0109] As used herein, the terms "conductive", "electrically conductive", and "conductivity" refer to the ability to conduct an electric current. A conductive material is a material that presents little or no resistance to the flow of an electric current. One unit of measure for conductivity is siemens per meter (S / m). Generally, a conductive material is a material having a conductivity greater than about 10 4 S / m, such as at least 10 5 S / m or at least 10 6 S / m. The conductivity of a material sometimes varies with temperature. Unless otherwise specified, the conductivity of a material is measured at room temperature.

[0110] In addition, quantities, ratios, and other numerical values are sometimes presented herein in a range format. It should be understood that such range formats are used for convenience and brevity and should be interpreted flexibly as encompassing not only the explicitly specified values as the limits of the range, but also all individual values or sub-ranges subsumed within that range as if each value and sub-range were explicitly specified.

[0111] Although the present disclosure has been described and illustrated with reference to specific embodiments thereof, such description and illustration are not restrictive. Those skilled in the art will understand that various changes can be made and equivalents can be substituted without departing from the true spirit and scope of the present disclosure as defined by the appended claims. The drawings may not necessarily be drawn to scale. Due to manufacturing processes and tolerances, there may be differences between the process reproductions and the actual devices in the present disclosure. There may be other embodiments not specifically described in the present disclosure. The specification and drawings should be regarded as illustrative rather than restrictive. Modifications can be made to adapt a particular situation, material, composition of matter, method, or process to the objectives, spirit, and scope of the present disclosure. All such modifications are considered to be within the scope of the appended claims. Although the methods disclosed herein have been described with reference to specific operations performed in a particular order, it should be understood that these operations can be combined, sub-divided, or re-ordered without departing from the teachings of the present disclosure to form equivalent methods. Accordingly, unless specifically indicated herein, the order and grouping of the operations are not limitations of the present disclosure.

Claims

1. An electronic device, comprising: a plurality of electronic components; and a circuit structure connected to the plurality of electronic components, wherein the circuit structure is configured to connect the adjacent electronic components along a first path, and the circuit structure is further configured to connect the electronic components along a second path, the second path having a greater length and a higher speed compared to the first path.

2. The electronic device according to claim 1, wherein the first path is an electrical communication path, and the second path is an optical communication path.

3. The electronic device according to claim 1, wherein the circuit structure includes an optical channel configured to connect the electronic components along the second path.

4. The electronic device according to claim 1, wherein a first speed of the first path is 50% to 75% of a second speed of the second path.

5. The electronic device according to claim 1, wherein the first path and the second path extend in different directions.

6. The electronic device according to claim 1, wherein at least a portion of the first path is substantially parallel to the second path.

7. The electronic device according to claim 1, wherein the first path and the second path are at different heights.

8. The electronic device according to claim 7, wherein the first path is closer to the electronic components than the second path.

9. The electronic device according to claim 1, further comprising a photon component configured to provide photoelectric conversion and electrically connect the circuit structure to the plurality of electronic components.

10. The electronic device according to claim 9, wherein the circuit structure includes an optical channel disposed between the photon component and the electronic components and optically coupled to the photon component.

11. The electronic device according to claim 9, wherein the circuit structure includes an optical channel optically coupled to the photon component and configured to connect the electronic components along the second path.

12. The electronic device according to claim 11, wherein the circuit structure further includes a circuit layer disposed between the optical channel and the electronic components and configured to electrically connect the electronic components along the first path.

13. The electronic device according to claim 12, further comprising a bridging component located between the circuit layer and the optical channel and configured to electrically connect the electronic components along the first path.

14. An electronic device, comprising: a plurality of electronic components; an optoelectronic interposer located at a first side of the plurality of electronic components and configured to provide electrical transmission and optical transmission between the electronic components; and a plurality of power modules located at a second side opposite to the first side of the plurality of electronic components and configured to supply power to the plurality of electronic components.

15. The electronic device according to claim 14, wherein a power path between the power module and the electronic components is shorter than an optical path of the optical transmission between the electronic components.

16. The electronic device according to claim 14, wherein the optoelectronic interlayer includes a plurality of photon components and optical channels connecting the photon components, and the optical channels are configured to be connected to optical components outside the electronic device.

17. The electronic device according to claim 14, wherein each of the power modules is connected to each of the corresponding electronic components.

18. An electronic device, comprising: a plurality of electronic components; a plurality of optoelectronic components configured to provide electrical communication between the electronic components; and a circuit including optical channels configured to optically couple to the optoelectronic components and provide optical communication between the optoelectronic components.

19. The electronic device according to claim 18, further comprising a power conditioning element disposed between the optoelectronic components.

20. The electronic device according to claim 19, further comprising a power module disposed below the circuit and configured to supply power to the electronic components through the power conditioning element.