A method, system and medium for calculating thermal conductivity of graphene / copper composite interface

Abstract

This application discloses a method, system, and medium for calculating the interfacial thermal conductivity of a graphene / copper composite material. These methods primarily relate to the field of interfacial thermal conductivity technology and address the problem that existing solutions are unable to calculate the interfacial thermal conductivity of graphene / copper composite materials based on phonon-electron coupling, thereby failing to provide an optimal graphene / copper composite material. The method comprises: obtaining the degree of coupling between phonons and electrons using a phonon-electron coupling formula and basic parameters of the current graphene / copper composite material; then constructing a dual-temperature model incorporating the degree of coupling between phonons and electrons in simulation software; using the simulation parameters, the simulation software incorporating the dual-temperature model simulates the interface structure model to obtain the interfacial thermal conductivity of the graphene / copper composite material to be tested; and determining that the graphene / copper composite material with the structure corresponding to the maximum value in the interfacial thermal conductivity is the optimal graphene / copper composite material.

Description

Technical Field

[0001] The present application relates to the field of interface thermal conductivity technology, and in particular to a method, system, and medium for calculating the interface thermal conductivity of a graphene / copper composite material. Background Art

[0002] Microelectronic devices are continuously advancing towards nanoscale miniaturization and three-dimensional heterogeneous integration, with power density increasing exponentially. This has resulted in heat fluxes exceeding 1000 W / cm² in electronic devices. In the development of thermal packaging technology, device performance degradation and shortened service life due to thermal effects have become primary constraints and failure modes. Against this backdrop, graphene / copper composites, as a new generation of thermal interface materials, significantly enhance the thermal conductivity of composites by adding highly thermally conductive materials like graphene to a metal matrix, making them valuable for applications in electronic device packaging.

[0003] Although current preparation technology has achieved a certain improvement in the thermal conductivity of composite materials, there is still a significant gap with the theoretical expectation. Clarifying the thermal conductivity mechanism of graphene / copper composites is the core prerequisite for promoting material design and process optimization. However, the current understanding of the thermal conductivity mechanism of copper / graphene composites is still in its infancy. Most existing studies have only been carried out from the perspective of phonon conduction, and generally fail to fully consider the important role of electrons in the copper matrix in the heat conduction process. This makes it difficult to deeply analyze the actual contribution of phonon-electron coupling in the composite material to the overall heat conduction.

[0004] To this end, a method, system and medium for calculating the interface thermal conductivity of graphene / copper composite materials are urgently needed to solve the problem that existing solutions cannot calculate the interface thermal conductivity of graphene / copper composite materials based on phonon-electron coupling, and thus cannot provide the optimal graphene / copper composite materials. Summary of the Invention

[0005] The present application provides a method, system, and medium for calculating the thermal conductivity of the interface of a graphene / copper composite material to solve the problem that existing solutions cannot calculate the thermal conductivity of the interface of a graphene / copper composite material based on phonon-electron coupling, and thus cannot provide an optimal graphene / copper composite material.

[0006] In a first aspect, the present application provides a method for calculating the thermal conductivity of a graphene / copper composite interface, the method comprising:

[0007] Establish interface structure models of graphene / copper composite materials with different structures to be tested; obtain simulation parameters that are consistent with the properties of the current graphene / copper composite materials;

[0008] The degree of coupling between phonons and electrons is obtained by using the phonon-electron coupling formula and the basic parameters of the current graphene / copper composite material. Then, a dual-temperature model that includes the degree of coupling between phonons and electrons is constructed in the simulation software.

[0009] The simulation software including the dual-temperature model uses simulation parameters to simulate the interface structure model and obtain the interface thermal conductivity of the graphene / copper composite material to be tested;

[0010] The graphene / copper composite material with the structure corresponding to the maximum value in the interface thermal conductivity is determined to be the optimal graphene / copper composite material.

[0011] In one implementation of the present application, the graphene / copper composite materials to be tested with different structures include graphene / copper composite materials of different lengths, graphene / copper composite materials with different copper crystal planes, and graphene / copper composite materials with different defect concentrations; wherein the defects corresponding to the defect concentration include at least: Stone Wales defect, single vacancy defect, double vacancy V2555777 defect, and double vacancy V2585 defect.

[0012] In one implementation of the present application, an interface structure model of the graphene / copper composite material to be tested with different structures is established, specifically including:

[0013] Create interface structure models of graphene / copper composite materials with different structures to be tested in Materials Studio

[0014] In one implementation of the present application, the coupling degree between phonons and electrons is obtained by using the phonon-electron coupling formula and the basic parameters of the current graphene / copper composite material, and then a dual-temperature model including the coupling degree between phonons and electrons is constructed in the simulation software, specifically including:

[0015] Through the phonon-electron coupling formula:

[0016] , calculate the coupling degree between phonons and electrons ;

[0017] Among them, the parameters of graphene / copper composite materials whose defect concentrations are to be tested include: electronic specific heat capacity , electron density , electronic thermal conductivity , phonon temperature , electron temperature , electron temperature gradient , laser heat source S(x,t);

[0018] A two-temperature model that includes the degree of coupling between phonons and electrons was constructed in the simulation software.

[0019] In one implementation of the present application, simulation software including a dual-temperature model utilizes simulation parameters to simulate an interface structure model to obtain the interface thermal conductivity of the graphene / copper composite material to be tested, specifically including:

[0020] The simulation software including the dual-temperature model uses simulation parameters to simulate the interface structure model to obtain the accumulated energy q and temperature gradient of the graphene / copper composite material to be tested. and cross-sectional area A;

[0021] By formula:

[0022] , the interface thermal conductivity is calculated .

[0023] In one implementation of the present application, obtaining simulation parameters that conform to the properties of the current graphene / copper composite material specifically includes:

[0024] Get simulation parameters through the preset interface.

[0025] In a second aspect, the present application provides a system for calculating the thermal conductivity of a graphene / copper composite interface, the system comprising:

[0026] Establish a module for establishing interface structure models of graphene / copper composite materials with different structures to be tested; obtain simulation parameters that meet the properties of the current graphene / copper composite materials;

[0027] The dual-temperature module is used to obtain the degree of coupling between phonons and electrons using the phonon-electron coupling formula and the basic parameters of the current graphene / copper composite material, and then construct a dual-temperature model that includes the degree of coupling between phonons and electrons in the simulation software;

[0028] An acquisition module is used to simulate the interface structure model using simulation parameters using simulation software including a dual-temperature model to obtain the interface thermal conductivity of the graphene / copper composite material to be tested;

[0029] The determination module is used to determine that the graphene / copper composite material having a structure corresponding to a maximum value in the interface thermal conductivity is the optimal graphene / copper composite material.

[0030] In one implementation of the present application, the dual-temperature module includes a dual-temperature unit.

[0031] The formula for electron coupling via phonons is:

[0032] , calculate the coupling degree between phonons and electrons ;

[0033] Among them, the parameters of graphene / copper composite materials whose defect concentrations are to be tested include: electronic specific heat capacity , electron density , electronic thermal conductivity , phonon temperature , electron temperature , electron temperature gradient , laser heat source S(x,t);

[0034] A two-temperature model that includes the degree of coupling between phonons and electrons was constructed in the simulation software.

[0035] In one implementation of the present application, the obtaining module includes an obtaining unit,

[0036] Used to simulate the interface structure model using simulation parameters through simulation software containing a dual-temperature model to obtain the accumulated energy q and temperature gradient of the graphene / copper composite material to be tested and cross-sectional area A;

[0037] By formula:

[0038] , the interface thermal conductivity is calculated .

[0039] In a third aspect, the present application provides a non-volatile computer storage medium having computer instructions stored thereon, which, when executed, implement a method for calculating the thermal conductivity of the interface of a graphene / copper composite material as described above.

[0040] A non-volatile computer storage medium stores computer instructions, which, when executed, implement any of the above methods for calculating the thermal conductivity of a graphene / copper composite interface.

[0041] It can be seen from the above technical solutions that this application has the following advantages:

[0042] This application studies the interface heat transport mechanism of composite materials based on non-equilibrium molecular dynamics simulation combined with a dual-temperature model. This application can perform large-scale molecular dynamics simulations of the thermal transport properties of different graphene / copper materials while achieving accuracy comparable to first-principles methods, and obtains the effects of different copper crystal planes and graphene defects on the thermal properties of composite materials, guiding the development of thermal packaging materials. This application seeks the theoretical conditions for the maximum thermal transport of the graphene / copper thermal packaging material to be tested, considers the effects of electrons and phonons on thermal transport through molecular dynamics simulation methods, and adopts a variety of temperature control methods to simulate the effects of length, crystal planes, and graphene defects on graphene / copper, thereby solving the problem that existing solutions cannot calculate the thermal conductivity of the graphene / copper composite interface based on phonon-electron coupling, and thus cannot provide the optimal graphene / copper composite material. BRIEF DESCRIPTION OF THE DRAWINGS

[0043] In order to more clearly illustrate the technical solution of the present invention, the following is a brief introduction to the drawings required for the description. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0044] Figure 1 This is a flow chart of a method for calculating the thermal conductivity of a graphene / copper composite interface provided in an embodiment of the present application.

[0045] Figure 2 This is a molecular dynamics simulation method model of a graphene / copper composite material provided in an embodiment of the present application.

[0046] Figure 3 This is a schematic diagram of a graphene / copper composite material provided in an embodiment of the present application changing with length.

[0047] Figure 4 This is a schematic diagram of the variation of thermal conductivity of the interface of a graphene / copper composite material with the copper crystal plane provided in an embodiment of the present application.

[0048] Figure 5 This is a schematic diagram of a graphene defect provided in an embodiment of the present application.

[0049] Figure 6 This is a schematic diagram of a graphene / copper composite material provided in an embodiment of the present application that changes with graphene defects.

[0050] Figure 7 This is a schematic diagram of the internal structure of a system for calculating the thermal conductivity of the interface of a graphene / copper composite material provided in an embodiment of the present application. DETAILED DESCRIPTION

[0051] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0052] It should be understood by those skilled in the art that the embodiments described below are merely preferred embodiments of the present disclosure and do not imply that the present disclosure can only be implemented through these preferred embodiments. These preferred embodiments are merely intended to explain the technical principles of the present disclosure and are not intended to limit the scope of protection of the present disclosure. Based on the preferred embodiments provided by the present disclosure, all other embodiments obtained by those skilled in the art without creative effort should still fall within the scope of protection of the present disclosure.

[0053] It should also be noted that the terms "comprises," "includes," or any other variations thereof are intended to encompass non-exclusive inclusion, such that a process, method, commodity, or apparatus that includes a series of elements includes not only those elements but also other elements not explicitly listed, or includes elements inherent to such process, method, commodity, or apparatus. In the absence of further limitations, an element defined by the phrase "comprises a ..." does not exclude the presence of other identical elements in the process, method, commodity, or apparatus that includes the element.

[0054] The technical solutions proposed in the embodiments of the present application are described in detail below with reference to the accompanying drawings.

[0055] The embodiment provides a method for calculating the thermal conductivity of the interface of graphene / copper composite materials, such as Figure 1 As shown, the method provided in the embodiment of the present application mainly includes the following steps:

[0056] Step 110: Establish interface structure models of the graphene / copper composite materials to be tested with different structures; and obtain simulation parameters that meet the properties of the current graphene / copper composite material.

[0057] It should be noted that the graphene / copper composite materials to be tested with different structures may include graphene / copper composite materials of different lengths, graphene / copper composite materials with different copper crystal planes, and graphene / copper composite materials with different defect concentrations; wherein the defects corresponding to the defect concentration include at least: Stone Wales defect, single vacancy defect, double vacancy V2555777 defect, and double vacancy V2585 defect.

[0058] In some embodiments, establishing an interface structure model of the graphene / copper composite material to be tested with different structures specifically includes:

[0059] The interface structure models of the graphene / copper composite materials to be tested with different structures were created in Materials Studio.

[0060] In some embodiments, obtaining simulation parameters that conform to the properties of the current graphene / copper composite material specifically includes:

[0061] Get simulation parameters through the preset interface.

[0062] Step 120: Obtain the coupling degree between phonons and electrons using the phonon-electron coupling formula and the basic parameters of the current graphene / copper composite material, and then construct a dual-temperature model including the coupling degree between phonons and electrons in the simulation software.

[0063] This step can be specifically as follows:

[0064] Through the phonon-electron coupling formula:

[0065] , calculate the coupling degree between phonons and electrons ;

[0066] Among them, the parameters of graphene / copper composite materials whose defect concentrations are to be tested include: electronic specific heat capacity , electron density , electronic thermal conductivity , phonon temperature , electron temperature , electron temperature gradient , laser heat source S(x,t); t is time, x is the position in the direction of laser propagation.

[0067] A two-temperature model that includes the degree of coupling between phonons and electrons was constructed in the simulation software.

[0068] Step 130: The simulation software including the dual-temperature model uses simulation parameters to simulate the interface structure model to obtain the interface thermal conductivity of the graphene / copper composite material to be tested.

[0069] This step can be specifically as follows:

[0070] The simulation software including the dual-temperature model uses simulation parameters to simulate the interface structure model to obtain the accumulated energy q and temperature gradient of the graphene / copper composite material to be tested. and cross-sectional area A;

[0071] By formula:

[0072] , the interface thermal conductivity is calculated .

[0073] Step 140: Determine the graphene / copper composite material having a structure corresponding to a maximum value in the interface thermal conductivity as the optimal graphene / copper composite material.

[0074] Based on the above description, as an example, when the graphene / copper composite materials to be tested have different structures and are graphene / copper composite materials with different lengths, the above simulation process may be:

[0075] Step 1.1: Establish a non-equilibrium molecular dynamics graphene / copper composite model using Materias Studio software. Angstrom graphene / copper interface structure model (e.g. Figure 2 As shown in the figure), simulate it in the simulation software.

[0076] Step 1.2: Enter the simulation parameters into the simulation software. Set the temperature to 300 K and the time step to 0.5 fs. Use periodic boundary conditions. Use the isothermal and isobaric ensemble (NPT) with a step of 0.5 fs for a total of 0.5 ns, and the canonical ensemble (NVT) with a step of 0.5 fs for a total of 0.5 ns.

[0077] Step 1.3 sets the hot end and the cold end, and layers the interface structure model along the z-axis, for a total of 50 layers. While maintaining the number of particles, volume, and energy of the system constant through the NVE ensemble, the dual-temperature model is introduced, and the interaction between electrons and phonons is set, which mainly includes Parameters, through the formula:

[0078] ,in, is the electronic specific heat capacity, is the electron density, is the electronic thermal conductivity, and are the phonon and electron temperatures, is the electron temperature gradient, The coupling degree between phonons and electrons is calculated by the above formula: To simulate heat conduction and other related physical processes, the accumulated energy and temperature gradient are calculated, and then the interface thermal conductivity is calculated.

[0079] like Figure 3 As shown, the horizontal axis is the reciprocal of the length (unit: angstrom ), the ordinate is the inverse of the interface thermal conductivity, that is, the interface thermal resistance (unit: ), by converting the model length (different lengths to be tested) into the inverse of the length, and converting the interface thermal conductance of different lengths calculated in steps 1.1, 1.2 and 1.3 into the interface thermal resistance, we can get Figure 3 , and then the interface thermal conductivity of the composite material at infinite size is obtained by fitting the least squares method (the interface thermal conductivity is obtained by converting the interface thermal resistance).

[0080] Based on the above description, as a second example, when the graphene / copper composite materials with different structures to be tested are graphene / copper composite materials with different copper crystal planes, the above simulation process can be:

[0081] It should be noted that the copper crystal planes to be tested may be copper (111), (110), (321), (410), and (653) copper crystal planes.

[0082] like Figure 4As shown, different crystal planes (copper (111), (110), (321), (410), (653)) will correspond to different interface thermal conductivities (units are: The specific acquisition process can be:

[0083] Step 2.1, create the interface structure model of copper (111), (110), (321), (410), (653) and graphene in Materias Studio, set the heat source and heat sink lengths to 5 angstroms, and set the temperatures to 325 K and 275 K, respectively; the interface structure model is optimized to obtain a stable crystal structure.

[0084] Step 2.2, introduce the two-temperature model and set the interaction between electrons and phonons, mainly including Parameters, through the formula:

[0085] ,in, is the electronic specific heat capacity, is the electron density, is the electronic thermal conductivity, and are the phonon and electron temperatures, is the electron temperature gradient, The coupling degree between phonons and electrons is calculated using the above formula. Based on this, the interfacial thermal conductivities of different crystal planes and graphene are obtained.

[0086] Based on the above description, as a third example, when the graphene / copper composite materials to be tested with different structures are graphene / copper composite materials with different defect concentrations, the above simulation process can be:

[0087] Step 3.1, construct Stone Wales (SW), single vacancy V1, double vacancy V2 (555777), double vacancy V2 (585) defects in graphene using Material Studio (graphene defects such as Figure 5 (As shown, units are in angstroms). In Materials Studio, defective graphene and copper were combined into a sandwich structure (interface structure model). The heat source and heat sink lengths were both set to 5 angstroms, and the temperatures were 325 K and 275 K, respectively. After optimization, the model yielded a stable structure.

[0088] Step 3.2, introduce the two-temperature model and set the interaction between electrons and phonons, mainly including Parameter setting. Taking copper (111) / graphene as an example, the formula is:

[0089] ,in, is the electron specific heat capacity, is the electron density, is the electronic thermal conductivity, and are the phonon and electron temperatures, is the electron temperature gradient, The coupling degree between phonons and electrons is calculated by the above formula: On this basis, the interface thermal conductivity of graphene with different defects and copper (111) was obtained (such as Figure 6 As shown, the graphene / copper composite varies with graphene defects).

[0090] In addition, this application Figure 7 The present invention provides a system for calculating the thermal conductivity of the interface of graphene / copper composite materials. Figure 7 As shown, the system provided in the embodiment of the present application mainly includes:

[0091] Establishing module 210, for establishing interface structure models of graphene / copper composite materials to be tested with different structures; obtaining simulation parameters that conform to the properties of the current graphene / copper composite material;

[0092] The dual-temperature module 220 is used to obtain the coupling degree between phonons and electrons by using the phonon-electron coupling formula and the basic parameters of the current graphene / copper composite material, and then construct a dual-temperature model including the coupling degree between phonons and electrons in the simulation software;

[0093] The dual temperature module 220 includes a dual temperature unit.

[0094] The formula for electron coupling via phonons is:

[0095] , calculate the coupling degree between phonons and electrons ;

[0096] Among them, the parameters of graphene / copper composite materials whose defect concentrations are to be tested include: electronic specific heat capacity , electron density , electronic thermal conductivity , phonon temperature , electron temperature , electron temperature gradient , laser heat source S(x,t);

[0097] A two-temperature model that includes the degree of coupling between phonons and electrons was constructed in the simulation software.

[0098] An acquisition module 230 is configured to simulate the interface structure model using simulation parameters using simulation software including a dual-temperature model to obtain the interface thermal conductivity of the graphene / copper composite material to be tested;

[0099] The acquisition module 230 includes an acquisition unit for simulating the interface structure model using simulation parameters using simulation software including a dual-temperature model to obtain the accumulated energy q and temperature gradient of the graphene / copper composite material to be tested. and cross-sectional area A; by the formula:

[0100] , the interface thermal conductivity is calculated .

[0101] The determination module 240 is configured to determine that the graphene / copper composite material having the structure corresponding to the maximum value of the interface thermal conductivity is the optimal graphene / copper composite material.

[0102] In addition, an embodiment of the present application further provides a non-volatile computer storage medium having executable instructions stored thereon. When the executable instructions are executed, a method for calculating the thermal conductivity of the interface of the graphene / copper composite material as described above is implemented.

[0103] The above description of the disclosed embodiments is intended to enable one skilled in the art to implement or use the present invention. Various modifications to these embodiments will be readily apparent to one skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention is not limited to the embodiments shown herein but is intended to conform to the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A method for calculating the thermal conductivity of a graphene / copper composite interface, characterized in that: The method comprises: Establish interface structure models of graphene / copper composite materials with different structures to be tested; obtain simulation parameters that are consistent with the properties of the current graphene / copper composite materials; The degree of coupling between phonons and electrons is obtained by using the phonon-electron coupling formula and the basic parameters of the current graphene / copper composite material. Then, a dual-temperature model that includes the degree of coupling between phonons and electrons is constructed in the simulation software. The simulation software including the dual-temperature model uses simulation parameters to simulate the interface structure model and obtain the interface thermal conductivity of the graphene / copper composite material to be tested; specifically, it includes: The simulation software including the dual-temperature model uses simulation parameters to simulate the interface structure model to obtain the accumulated energy q and temperature gradient of the graphene / copper composite material to be tested. and cross-sectional area A; By formula: , the interface thermal conductivity is calculated ; The graphene / copper composite material with the structure corresponding to the maximum value in the interface thermal conductivity is determined to be the optimal graphene / copper composite material.

2. The method for calculating the thermal conductivity of the graphene / copper composite material interface according to claim 1, wherein: The graphene / copper composite materials to be tested with different structures include graphene / copper composite materials with different lengths, graphene / copper composite materials with different copper crystal planes, and graphene / copper composite materials with different defect concentrations; wherein the defects corresponding to the defect concentration include at least: Stone Wales defect, single vacancy defect, double vacancy V2555777 defect, and double vacancy V2585 defect.

3. The method for calculating the thermal conductivity of the graphene / copper composite material interface according to claim 1, characterized in that: Establish interface structure models of graphene / copper composite materials with different structures to be tested, including: The interface structure models of the graphene / copper composite materials to be tested with different structures were created in Materials Studio.

4. The method for calculating the thermal conductivity of the graphene / copper composite material interface according to claim 1, wherein: The degree of coupling between phonons and electrons is obtained by using the phonon-electron coupling formula and the basic parameters of the current graphene / copper composite material. Then, a dual-temperature model that includes the degree of coupling between phonons and electrons is constructed in the simulation software. Specifically, the following are the steps: Through the phonon-electron coupling formula: , calculate the coupling degree between phonons and electrons ; Among them, the parameters of graphene / copper composite materials whose defect concentrations are to be tested include: electronic specific heat capacity , electron density , electronic thermal conductivity , phonon temperature , electron temperature , electron temperature gradient , laser heat source S(x,t); A two-temperature model that includes the degree of coupling between phonons and electrons was constructed in the simulation software.

5. The method for calculating the thermal conductivity of the graphene / copper composite material interface according to claim 1, characterized in that: Obtain simulation parameters that are consistent with the properties of the current graphene / copper composite material, including: Get simulation parameters through the preset interface.

6. A system for calculating the thermal conductivity of a graphene / copper composite interface, characterized in that: The system comprises: Establish a module for establishing interface structure models of graphene / copper composite materials with different structures to be tested; obtain simulation parameters that meet the properties of the current graphene / copper composite materials; The dual-temperature module is used to obtain the degree of coupling between phonons and electrons using the phonon-electron coupling formula and the basic parameters of the current graphene / copper composite material, and then construct a dual-temperature model that includes the degree of coupling between phonons and electrons in the simulation software; An acquisition module is used to simulate the interface structure model using simulation parameters using simulation software including a dual-temperature model to obtain the interface thermal conductivity of the graphene / copper composite material to be tested; The acquisition module includes an acquisition unit for simulating the interface structure model using simulation parameters through simulation software containing a dual-temperature model to obtain the accumulated energy q and temperature gradient of the graphene / copper composite material to be tested. and cross-sectional area A; By formula: , the interface thermal conductivity is calculated ; The determination module is used to determine that the graphene / copper composite material having a structure corresponding to a maximum value in the interface thermal conductivity is the optimal graphene / copper composite material.

7. The system for calculating thermal conductivity of a graphene / copper composite material interface according to claim 6, characterized in that: The dual temperature module includes a dual temperature unit. The formula for electron coupling via phonons is: , calculate the coupling degree between phonons and electrons ; Among them, the parameters of graphene / copper composite materials whose defect concentrations are to be tested include: electronic specific heat capacity , electron density , electronic thermal conductivity , phonon temperature , electron temperature , electron temperature gradient , laser heat source S(x,t); A two-temperature model that includes the degree of coupling between phonons and electrons was constructed in the simulation software.

8. A non-volatile computer storage medium, characterized in that Computer instructions are stored thereon, and when the computer instructions are executed, the method for calculating the thermal conductivity of the interface of the graphene / copper composite material according to any one of claims 1 to 5 is implemented.

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