Double-phase high-power-density power supply based on double-sided heat dissipation MOSFET

Abstract

The invention discloses a double-phase high-power-density power supply based on a double-sided heat dissipation MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor), which belongs to the technical field of switching power supplies and comprises the following steps: a double-phase power supply main control chip generates control signals of each phase of power supply; the first phase power supply main power half-bridge circuit and the second phase power supply main power half-bridge circuit are designed according to a double-sided heat dissipation MOSFET and generate output voltage of each phase power supply according to a control signal; the double-phase power supply main control chip is arranged at the center of the back surface of the PCB; the first-phase power supply main power half-bridge circuit and the second-phase power supply main power half-bridge circuit are symmetrically arranged at the two ends of the PCB; in the first-phase power supply main power half-bridge circuit and the second-phase power supply main power half-bridge circuit, double-sided heat dissipation MOSFETs forming an upper tube circuit are arranged on the front surface of the PCB, and double-sided heat dissipation MOSFETs forming a lower tube circuit are arranged on the back surface of the PCB; main power inductors in the main power half-bridge circuits of the first phase power supply and the second phase power supply are arranged above the double-sided heat dissipation MOSFETs of the upper tube circuit, and the area of a PCB (printed circuit board) is not occupied by utilizing the longitudinal space above the power tubes.

Description

Technical Field

[0001] The present invention belongs to the technical field of switching power supplies, and particularly relates to a dual-phase high-power density power supply based on a double-sided heat dissipation MOSFET. Background Art

[0002] As an important component of electronic products, switching power supplies are commonly found in various electronic products. With the development of technology, the trend of electronic product size is towards smaller and higher integration. Therefore, as a part of electronic products, switching power supplies also need to continuously reduce their own size.

[0003] When designing a switching power supply, it usually requires a power control chip and its peripheral devices, a main power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), a switching tube, a power inductor or a transformer, etc. Therefore, in order to reduce the volume of the power supply, in some power supply designs, this goal is achieved by reducing the number of power supply circuit devices. For example, by using a shared multi-phase power control chip to achieve the output of a multi-phase power supply, reducing the number of power control chips and their peripheral devices, thereby reducing the PCB (Printed Circuit Board) area occupied by the devices in the circuit. However, if the layout design of the multi-phase power control chip and the power devices of each phase is unreasonable, it will lead to problems such as possible interference in the power supply circuit and abnormal circuit operation. At the same time, an unreasonable layout will also cause uneven temperature distribution of the devices in the power supply circuit, and the working temperature of the main power circuit devices is too high, which may damage the circuit. The reduction of the size of electronic products means that in a smaller size, the switching power supply in electronic products needs to provide greater power.

[0004] For a switching power supply, the main power MOSFET in the power supply circuit needs to be able to withstand and conduct a larger current. When conducting a large current, the heat generated by the MOSFET should be transferred in a timely manner to avoid device damage due to overheating. According to the working principle of the MOSFET, conducting a larger current through the MOSFET means that the MOSFET will generate greater losses and temperature rises. At this time, a MOSFET power tube with a larger package is generally selected to increase the heat dissipation area of the device or add heat dissipation measures to reduce the temperature rise of the device in the state of conducting a larger current. However, this increases the size of the power supply circuit. Additionally, by selecting power supply technologies with low power tube losses, such as soft switching technology, active clamping technology, etc., the losses of the main power MOSFET can be reduced. However, these technologies increase the complexity of circuit design and the number of other devices, adding to the design difficulty and size of the circuit. The commonly used PCB board in electronic circuit design serves as the main carrier for devices and the carrier for electrical connections in the design of switching power supplies and is widely used in power supply design. When designing a power supply, devices in the power supply circuit are arranged on the front and back sides of the PCB board. When there are not enough circuit devices to be placed on the PCB board, the area of the PCB board is usually further increased to meet the layout design of all power supply devices. Increasing the area of the PCB board means increasing the area of the overall power supply circuit. In view of the above problems, the layout design of the multi-phase power supply circuit is unreasonable, resulting in uneven temperature distribution in the power supply circuit and increasing the risk of circuit design; for high-power power supplies, larger package MOSFET power tubes and additional heat dissipation measures are used, increasing the size of the overall power supply; in the design of the power supply PCB, the layout area of the PCB board is increased to meet the arrangement of devices in the power supply circuit, increasing the overall size of the power supply, all of which are not conducive to the miniaturization, integration, and reliability design of the power supply circuit.

[0005] Therefore, there is an urgent need to design a switching power supply to meet the design requirements of low temperature rise, multi-phase output, large current output, and high power density. Summary of the Invention

[0006] To solve the above problems existing in the prior art, the present invention provides a dual-phase high-power density power supply based on a double-sided heat dissipation MOSFET. The technical problems to be solved by the present invention are achieved through the following technical solutions: An embodiment of the present invention provides a dual-phase high-power density power supply based on a double-sided heat dissipation MOSFET, and the dual-phase high-power density power supply includes: A dual-phase power supply main control chip for generating control signals for each phase of the power supply; The first-phase power supply main power half-bridge circuit and the second-phase power supply main power half-bridge circuit are used to generate corresponding output voltages for each phase according to the control signal; the first-phase power supply main power half-bridge circuit and the second-phase power supply main power half-bridge circuit are respectively designed based on a number of double-sided heat dissipation MOSFET power tubes and a main power inductor; Among them, the dual-phase power supply main control chip is arranged in the central area on the back of the PCB board, and the first-phase power supply main power half-bridge circuit and the second-phase power supply main power half-bridge circuit are symmetrically arranged in the two end areas of the PCB board; the first-phase power supply main power half-bridge circuit includes a first upper tube circuit, a first lower tube circuit and a first main power inductor, and the second-phase power supply main power half-bridge circuit includes a second upper tube circuit, a second lower tube circuit and a second main power inductor. The first upper tube circuit, the second upper tube circuit, the first lower tube circuit and the second lower tube circuit are respectively designed based on a number of double-sided heat dissipation MOSFET power tubes, and all the double-sided heat dissipation MOSFET power tubes constituting the first upper tube circuit and the second upper tube circuit are arranged on the front of the PCB board, and all the double-sided heat dissipation MOSFET power tubes constituting the first lower tube circuit and the second lower tube circuit are arranged on the back of the PCB board. The first main power inductor is arranged above all the double-sided heat dissipation MOSFET power tubes constituting the first upper tube circuit, and the second main power inductor is arranged above all the double-sided heat dissipation MOSFET power tubes constituting the second upper tube circuit, using the longitudinal space above the first upper tube circuit and the second upper tube circuit without occupying the area of the PCB board.

[0007] Advantages of the present invention: The dual-phase high-power density power supply based on the double-sided heat dissipation MOSFET proposed by the present invention can meet the design requirements of low temperature rise, dual-phase output, large current output, and high power density. The overall power supply adopts a centralized high-density distribution. In the design, a double-sided heat dissipation MOSFET power tube is used for ingenious design. Not only can the PCB board located below the double-sided heat dissipation MOSFET be utilized to transfer the heat generated during the operation of the MOSFET, but also the power inductor closely attached above the double-sided heat dissipation MOSFET can transfer the heat generated during the operation of the MOSFET power tube. This power supply design realizes the conduction of heat in multiple directions, greatly reducing the temperature rise during the operation of the MOSFET power tube, ensuring the design reliability of the main power devices of the power supply, and enabling the MOSFET power tube to conduct a larger current. Without increasing the MOSFET package, the power density of the designed power supply is improved. In the design of the present invention, the main power inductors of each phase of the power supply are arranged above the corresponding double-sided heat dissipation MOSFET power tubes of each phase. This way of mounting the main power inductor on the top surface of the double-sided heat dissipation MOSFET utilizes the longitudinal space above the double-sided heat dissipation MOSFET power tube, saving the board area on the PCB board while facilitating the rapid transfer of heat during the operation of the double-sided heat dissipation MOSFET, and improving the power density of the designed power supply. In the design of the present invention, a dual-phase power supply control chip is used as the main control chip of the circuit. Combining the double-sided heat dissipation MOSFET power tubes and the corresponding main power inductors of each phase of the power supply symmetrically distributed on the PCB board, the output of the dual-phase power supply is designed and realized under the control of a single main control power supply chip, reducing the number of power circuit devices; the dual-phase power supply control chip is located in the center of the PCB board, and the main power circuits of the two phases of the power supply are symmetrically distributed at both ends of the PCB board, separating the position of the power control circuit part from the main power circuit part of each phase of the power supply, dispersing the heat from each other, and not interfering with each other during operation, improving the design reliability of each part of the power circuit. At the same time, this power supply design can make the overall temperature distribution of the power supply more uniform, facilitating the heat dissipation treatment of the dual-phase power supply, avoiding the temperature rise aggregation at the position where the power control circuit part is located, and improving the design reliability of the power supply. Generally speaking, the power supply designed by the present invention uses a double-sided heat dissipation MOSFET power tube for multi-directional heat transfer, resulting in a low temperature rise during device operation and enabling a larger current to be conducted. The main control chip of the power supply selects a dual-phase power supply control chip, and the circuit layout is symmetrically designed. While realizing the dual-phase power supply voltage output, the number of power circuit devices is saved. And the symmetrical distribution improves the design reliability of each part of the power supply circuit while facilitating the uniform distribution of the overall power supply temperature. Moreover, the main power inductor in the power supply circuit is arranged above the double-sided heat dissipation MOSFET power tube, saving the board area of the devices on the PCB board. From the above aspects, the low temperature rise and integration of the power supply design are improved, and the design reliability and power density of the overall power supply are enhanced.

[0008] The present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. Description of the Drawings

[0009] Figure 1 is a schematic structural diagram of a dual-phase high-power density power supply based on a double-sided heat dissipation MOSFET provided by an embodiment of the present invention; Figure 2 is a schematic structural diagram of the top and bottom surfaces of a double-sided heat dissipation MOSFET power tube provided by an embodiment of the present invention; Figure 3 is a schematic structural diagram of the main power half-bridge circuit of the first-phase power supply in the dual-phase high-power density power supply provided by an embodiment of the present invention; Figure 4 is a schematic structural diagram of the main power half-bridge circuit of the second-phase power supply in the dual-phase high-power density power supply provided by an embodiment of the present invention; Figure 5 is a schematic circuit diagram of a dual-phase high-power density power supply based on a double-sided heat dissipation MOSFET provided by an embodiment of the present invention; Figure 6 is a schematic top view structural diagram of a dual-phase high-power density power supply based on a double-sided heat dissipation MOSFET provided by an embodiment of the present invention; [[ID=2)]] Figure 7 is a schematic bottom view structural diagram of a dual-phase high-power density power supply based on a double-sided heat dissipation MOSFET provided by an embodiment of the present invention; Figure 8 is a schematic side view structural diagram of a dual-phase high-power density power supply based on a double-sided heat dissipation MOSFET provided by an embodiment of the present invention.

[0010] Description of the Reference Numerals: 1 - PCB board; 2 - Dual-phase power supply main control chip; 3 - First upper transistor circuit; 31 - First double-sided heat dissipation MOSFET power tube; 32 - Second double-sided heat dissipation MOSFET power tube; 4 - First lower transistor circuit; 41 - Third double-sided heat dissipation MOSFET power tube; 42 - Fourth double-sided heat dissipation MOSFET power tube; 5 - Second upper transistor circuit; 51 - Fifth double-sided heat dissipation MOSFET power tube; 52 - Sixth double-sided heat dissipation MOSFET power tube; 6 - Second lower transistor circuit; 61 - Seventh double-sided heat dissipation MOSFET power tube; 62 - Eighth double-sided heat dissipation MOSFET power tube; 7 - First main power inductor; 8 - Second main power inductor; 91 - First region; 92 - Second region; 10 - Heat sink; 11 - Thermal conductive material. Detailed Embodiments

[0011] The present invention will be further described in detail below in conjunction with specific embodiments, but the embodiments of the present invention are not limited thereto.

[0012] An embodiment of the present invention provides a dual-phase high-power density power supply based on a double-sided heat dissipation MOSFET. The dual-phase power supply includes: A dual-phase power supply main control chip for generating control signals for each phase of the power supply; A first-phase power supply main power half-bridge circuit and a second-phase power supply main power half-bridge circuit for generating corresponding output voltages for each phase according to the control signals; the first-phase power supply main power half-bridge circuit and the second-phase power supply main power half-bridge circuit are respectively designed based on a number of double-sided heat dissipation MOSFET power tubes and a main power inductor; Among them, the dual-phase power supply main control chip is disposed in the central area on the back of the PCB board, and the first-phase power supply main power half-bridge circuit and the second-phase power supply main power half-bridge circuit are symmetrically disposed in the two end areas of the PCB board; the first-phase power supply main power half-bridge circuit includes a first upper tube circuit, a first lower tube circuit and a first main power inductor, and the second-phase power supply main power half-bridge circuit includes a second upper tube circuit, a second lower tube circuit and a second main power inductor. The first upper tube circuit, the second upper tube circuit, the first lower tube circuit and the second lower tube circuit are respectively designed based on a number of double-sided heat dissipation MOSFET power tubes, and all the double-sided heat dissipation MOSFET power tubes constituting the first upper tube circuit and the second upper tube circuit are disposed on the front of the PCB board, and all the double-sided heat dissipation MOSFET power tubes constituting the first lower tube circuit and the second lower tube circuit are disposed on the back of the PCB board. The first main power inductor is disposed above all the double-sided heat dissipation MOSFET power tubes constituting the first upper tube circuit, and the second main power inductor is disposed above all the double-sided heat dissipation MOSFET power tubes constituting the second upper tube circuit, utilizing the longitudinal space above the first upper tube circuit and the second upper tube circuit without occupying the area of the PCB board.

[0013] As Figure 1 shown, the dual-phase high-power density power supply in the embodiment of the present invention includes: a dual-phase power supply main control chip 2 as the power control circuit part in the power supply, a first-phase power supply main power half-bridge circuit and a second-phase power supply main power half-bridge circuit as the main power circuit part in the power supply. The first-phase power supply main power half-bridge circuit includes a first upper tube circuit 3 and a first lower tube circuit 4, and the second-phase power supply main power half-bridge circuit includes a second upper tube circuit 5 and a second lower tube circuit 6. The power supply of the present invention further includes: a first main power inductor 7 in the first-phase power supply main power half-bridge circuit and a second main power inductor 8 in the second-phase power supply main power half-bridge circuit. The power supply in the embodiment of the present invention further includes: peripheral related control components, which can be selected according to actual needs and can be disposed in the first area 91 on the front of the PCB board as Figure 1 shown, or can be disposed in the second area 92 on the back of the PCB board as Figure 1 shown.

[0014] As Figure 1As shown in the figure, the overall power supply design of the embodiment of the present invention adopts a centralized high-density distribution, and selects the PCB board 1 as the carrier for carrying the designed power supply and transmitting signals and currents in the circuit. A dual-phase power supply main control chip 2 is arranged in the central area on the back of the PCB board 1, and peripheral related control devices are arranged in the second area 92 around the dual-phase power supply main control chip 2; symmetrically to the dual-phase power supply main control chip 2 in the central area of the PCB board 1, a first-phase power supply main power half-bridge circuit and a second-phase power supply main power half-bridge circuit are respectively arranged in the two end areas of the PCB board 1. Among them, a first upper tube circuit 3 composed of a plurality of double-sided heat dissipation MOSFET power tubes, a first lower tube circuit 4 composed of a plurality of double-sided heat dissipation MOSFET power tubes, and a first main power inductor 7 form a first-phase power supply main power half-bridge circuit, and all the devices of the first-phase power supply main power half-bridge circuit are arranged at the same end of the PCB board 1. Particularly, the first upper tube circuit 3 and the first lower tube circuit 4 in the first-phase power supply main power half-bridge circuit are symmetrically distributed on the front and back of the PCB board 1, the bottoms of the first upper tube circuit 3 and the first lower tube circuit 4 are mounted on the PCB board 1, and the first main power inductor 7 is arranged above all the double-sided heat dissipation MOSFET power tubes of the first upper tube circuit 3. In the same way, a second upper tube circuit 5 composed of a plurality of double-sided heat dissipation MOSFET power tubes, a second lower tube circuit 6 composed of a plurality of double-sided heat dissipation MOSFET power tubes, and a second main power inductor 8 form a second-phase power supply main power half-bridge circuit, and all the devices of the second-phase power supply main power half-bridge circuit are arranged at the other end of the PCB board 1. Particularly, the second upper tube circuit 5 and the second lower tube circuit 6 in the second-phase power supply main power half-bridge circuit are symmetrically distributed on the front and back of the PCB board 1, the bottoms of the second upper tube circuit 5 and the second lower tube circuit 6 are mounted on the PCB board 1, and the second main power inductor 8 is arranged above all the double-sided heat dissipation MOSFET power tubes of the second upper tube circuit 5.

[0015] The present invention adopts a centralized layout design of double-sided heat dissipation MOSFET power tubes to build a high-power density power supply. In the design of the present invention, both sides of all the double-sided heat dissipation MOSFET power tubes constituting the upper tube circuit are respectively mounted on the PCB board and the main power inductor. In this way, when the double-sided heat dissipation MOSFET power tubes conduct large currents, the PCB board and the main power inductor on both sides of the double-sided heat dissipation MOSFET power tubes are respectively used to conduct the heat generated by the devices, which can greatly reduce the temperature rise of the power devices, improve the reliability of the devices, and at the same time increase the current that the main power devices can pass, thereby improving the power of the designed power supply. Secondly, the present invention adopts a bottom-up device design and layout method, and arranges the main power inductor above all the double-sided heat dissipation MOSFET power tubes constituting the upper tube circuit, saving the board space occupied by the main power inductor on the PCB board, utilizing the longitudinal space above all the double-sided heat dissipation MOSFET power tubes constituting the upper tube circuit, and improving the power density of the power supply.

[0016] The master control chip designed in the present invention adopts a dual-phase power master control chip. By using a single power master control chip, the control of the dual-phase power circuit can be realized, and the dual-phase power voltage can be output, reducing the number of the power master control chip and its peripheral related control devices. Therefore, the occupied area of the power supply on the PCB board is also reduced, and the overall size of the power supply can be reduced by the design of the present invention. At the same time, the dual-phase power master control chip and its peripheral related control devices are arranged in the central area of the PCB board, and the main power transistors and power inductors of each phase of the power supply are symmetrically arranged at both ends of the PCB board. When the designed dual-phase power supply works, the main heat-generating devices, namely the main power transistors and the main power inductors, generate heat at both ends of the PCB board, without affecting the power control circuit part in the center of the PCB board. And with such a design and layout method, the heat of the main power devices of each phase of the power supply is relatively dispersed and does not affect each other. It can be seen that the power supply design of the present invention is in a centralized and symmetrical distribution, which can evenly distribute the temperature rise of each part of the power supply, improve the design reliability of the power supply, and at the same time spatially isolate the power control circuit part and the main power circuit parts of each phase of the power supply, avoiding mutual interference of each part of the power supply circuit during circuit operation, improving the reliability of the power supply circuit design, and ensuring the stability of the operation of the main power circuits of each phase of the power supply.

[0017] Further, in the first-phase power main power half-bridge circuit and the second-phase power main power half-bridge circuit of the embodiment of the present invention, all the double-sided heat dissipation MOSFET power transistors constituting the upper transistor circuit and the lower transistor circuit have a bottom heat dissipation pad and a top heat dissipation pad. A specific structure of each double-sided heat dissipation MOSFET power transistor is as Figure 2 shown, the top heat dissipation pad is denoted as D, and the bottom heat dissipation pad is denoted as C; wherein, the bottom heat dissipation pad C of each double-sided heat dissipation MOSFET power transistor constituting the first upper transistor circuit 3 in the first-phase power main power half-bridge circuit and the bottom heat dissipation pad C of each double-sided heat dissipation MOSFET power transistor constituting the second upper transistor circuit 5 in the second-phase power main power half-bridge circuit are attached to the PCB board, and the top heat dissipation pad D is attached to the corresponding main power inductor; the bottom heat dissipation pad C of each double-sided heat dissipation MOSFET power transistor constituting the first lower transistor circuit 4 in the first-phase power main power half-bridge circuit and the bottom heat dissipation pad C of each double-sided heat dissipation MOSFET power transistor constituting the second lower transistor circuit 6 in the second-phase power main power half-bridge circuit are attached to the PCB board, and the top heat dissipation pad D is selectively attached to the radiator according to the heat dissipation requirement. That is to say, for each double-sided heat dissipation MOSFET power transistor constituting the first lower transistor circuit 4 in the first-phase power main power half-bridge circuit and the second lower transistor circuit 6 in the second-phase power main power half-bridge circuit, according to the heat dissipation requirement, the radiator can be selectively attached or not attached.

[0018] Further, the present invention exemplarily designs as Figure 3The first-phase power main power half-bridge circuit based on the double-sided heat dissipation MOSFET shown in the figure includes: a first double-sided heat dissipation MOSFET power tube 31, a second double-sided heat dissipation MOSFET power tube 32, a third double-sided heat dissipation MOSFET power tube 41, a fourth double-sided heat dissipation MOSFET power tube 42, and a first main power inductor 7; among them, the first double-sided heat dissipation MOSFET power tube 31 and the second double-sided heat dissipation MOSFET power tube 32 form the first upper tube circuit 3 in the first-phase power main power half-bridge circuit, and are arranged side by side on the front side of the PCB board 1; the third double-sided heat dissipation MOSFET power tube 41 and the fourth double-sided heat dissipation MOSFET power tube 42 form the first lower tube circuit 4 in the first-phase power main power half-bridge circuit, and are arranged side by side on the back side of the PCB board 1; the first main power inductor 7 is arranged above the first double-sided heat dissipation MOSFET power tube 31 and the second double-sided heat dissipation MOSFET power tube 32. The bottom heat dissipation pads C of the first double-sided heat dissipation MOSFET power tube 31 and the second double-sided heat dissipation MOSFET power tube 32 are both in close contact with the PCB board 1; heat conduction materials 11 are evenly arranged on the top surfaces of the first double-sided heat dissipation MOSFET power tube 31 and the second double-sided heat dissipation MOSFET power tube 32. The heat conduction materials 11 can be heat conduction gaskets, so that the top heat dissipation pads D of the first double-sided heat dissipation MOSFET power tube 31 and the second double-sided heat dissipation MOSFET power tube 32 are in close contact with the heat conduction materials 11; the other side of the heat conduction materials 11 is in close contact with the first main power inductor 7, and a radiator 10 is arranged on the other side of the first main power inductor 7. More specifically, the implementation method in the power supply design is as follows: The first upper transistor circuit 3 in the first-phase power supply main power half-bridge circuit is implemented by using two double-sided heat dissipation MOSFET power transistors, namely the first double-sided heat dissipation MOSFET power transistor 31 and the second double-sided heat dissipation MOSFET power transistor 32. The first double-sided heat dissipation MOSFET power transistor 31 and the second double-sided heat dissipation MOSFET power transistor 32 are connected in parallel in the power supply circuit. During power supply design, the first double-sided heat dissipation MOSFET power transistor 31 and the second double-sided heat dissipation MOSFET power transistor 32 are arranged side by side on the front side of the PCB board 1, and the bottom heat dissipation pads C of the first double-sided heat dissipation MOSFET power transistor 31 and the second double-sided heat dissipation MOSFET power transistor 32 are both closely attached to the PCB board 1, using the PCB board 1 as the first heat dissipation conduction path for the first double-sided heat dissipation MOSFET power transistor 31 and the second double-sided heat dissipation MOSFET power transistor 32. A heat conduction material 11 is arranged on the top surfaces of the first double-sided heat dissipation MOSFET power transistor 31 and the second double-sided heat dissipation MOSFET power transistor 32, such that the top heat dissipation pads D of the first double-sided heat dissipation MOSFET power transistor 31 and the second double-sided heat dissipation MOSFET power transistor 32 are closely attached to the heat conduction material 11. Through the heat conduction material 11 and the first main power inductor 7, it serves as the second heat dissipation conduction path for the first double-sided heat dissipation MOSFET power transistor 31 and the second double-sided heat dissipation MOSFET power transistor 32; the other side of the heat conduction material 11 is closely attached to the first main power inductor 7, and a radiator 10 is arranged on the other side of the first main power inductor 7. It should be noted that the first double-sided heat dissipation MOSFET power transistor 31 and the second double-sided heat dissipation MOSFET power transistor 32 are preferably double-sided heat dissipation MOSFET devices of the same model and specification.

[0019] Here, when designing, the first double-sided heat dissipation MOSFET power transistor 31 and the second double-sided heat dissipation MOSFET power transistor 32 connected in parallel can jointly bear the current passing through the circuit during circuit operation, reducing the loss and stress of a single power transistor. While ensuring the reliable operation of the device, it improves the overall power supply working current and power. Using double-sided heat dissipation MOSFET power transistors of the same model and specification can further improve the uniformity of heat and current flow distribution of each MOSFET, enhancing the design reliability of the power supply. The power supply design of the present invention uses double-sided heat dissipation MOSFET power transistors, and the bottom heat dissipation pads C and the top heat dissipation pads D of the double-sided heat dissipation MOSFET power transistors are respectively attached to the PCB board and the heat conduction material, where the heat conduction material is also attached to the first main power inductor 7. Figure 3The black arrows side by side only indicate the heat dissipation direction. When the power supply works normally and the double-sided heat dissipation MOSFET power tube passes current, the heat generated by the double-sided heat dissipation MOSFET power tube can be transferred to the PCB board 1 through the bottom heat dissipation pad C respectively, and through the top heat dissipation pad D and then through the heat conduction material 11 to the first main power inductor 7. The double-sided heat dissipation MOSFET power tube realizes the conduction of heat in multiple directions, which can greatly reduce the temperature rise of the double-sided heat dissipation MOSFET power tube, so as to be applied in the designed circuit with larger current and higher power. When designing the power supply circuit, a radiator 10 is arranged on the top surface of the first main power inductor 7, which can further take away the heat generated when the first main power inductor 7 works and the heat transferred from the double-sided heat dissipation MOSFET power tube, reducing the temperature of the overall power supply circuit, so that the designed power supply can work under the condition of larger current and higher power. In addition, the first main power inductor 7 designed by the present invention is attached above the double-sided heat dissipation MOSFET power tube through the heat conduction material 11, making use of the longitudinal space above the double-sided heat dissipation MOSFET power tube, saving the layout area of the first main power inductor 7 on the PCB board 1, designing a centralized and compact layout, and improving the power density of the overall power supply. Therefore, through the design of the present invention, the heat generated when the main heating device of each phase of the designed power supply works, that is, the main power tube, is conducted and dissipated in different directions, so that by adopting the double-sided heat dissipation MOSFET power tube and carrying out reasonable layout design, the low temperature rise during the operation of the power device, the high power and high density of the power supply circuit can be realized.

[0020] Similarly, as Figure 4 shown, the main power half-bridge circuit of the second-phase power supply includes: the fifth double-sided heat dissipation MOSFET power tube 51, the sixth double-sided heat dissipation MOSFET power tube 52, the seventh double-sided heat dissipation MOSFET power tube 61, the eighth double-sided heat dissipation MOSFET power tube 62 and the second main power inductor 8; wherein, the fifth double-sided heat dissipation MOSFET power tube 51 and the sixth double-sided heat dissipation MOSFET power tube 52 constitute the second upper tube circuit 5 in the main power half-bridge circuit of the second-phase power supply, and are arranged side by side on the front side of the PCB board 1; the seventh double-sided heat dissipation MOSFET power tube 61 and the eighth double-sided heat dissipation MOSFET power tube 62 constitute the second lower tube circuit 6 in the main power half-bridge circuit of the second-phase power supply, and are arranged side by side on the back side of the PCB board 1; the second main power inductor 8 is arranged above the fifth double-sided heat dissipation MOSFET power tube 51 and the sixth double-sided heat dissipation MOSFET power tube 52. The specific implementation is similar to that of the main power half-bridge circuit of the first-phase power supply. For details, please refer to the description of the main power half-bridge circuit of the first-phase power supply above, and will not be repeated here.

[0021] Exemplarily, as Figure 5The dual-phase power supply master control chip 2 of the present invention shown has six output pins for control signals, among which three output pins for control signals are used to control the switching states of all double-sided heat dissipation MOSFET power tubes in the first-phase power supply main power half-bridge circuit, and the other three output pins for control signals are used to control the switching states of all double-sided heat dissipation MOSFET power tubes in the second-phase power supply main power half-bridge circuit. Specifically, the key pins of the dual-phase power supply master control chip 2 include: the output pin TG1 for generating the first control signal to control the first double-sided heat dissipation MOSFET power tube 31 and the second double-sided heat dissipation MOSFET power tube 32, the output pin BG1 for generating the second control signal to control the third double-sided heat dissipation MOSFET power tube 41 and the fourth double-sided heat dissipation MOSFET power tube 42, the output pin SW1 for controlling the midpoint of the upper tube circuit and the lower tube circuit connecting the first-phase power supply main power half-bridge circuit, the output pin TG2 for generating the fourth control signal to control the fifth double-sided heat dissipation MOSFET power tube 51 and the sixth double-sided heat dissipation MOSFET power tube 52, the output pin BG2 for generating the fifth control signal to control the seventh double-sided heat dissipation MOSFET power tube 61 and the eighth double-sided heat dissipation MOSFET power tube 62, and the output pin SW2 for controlling the midpoint of the upper tube circuit and the lower tube circuit connecting the second-phase power supply main power half-bridge circuit.

[0022] Exemplarily, such as Figure 5The present invention provides a specific design of the main power half-bridge circuit of the first-phase power supply. In the main power half-bridge circuit of the first-phase power supply: the gates of the first double-sided heat dissipation MOSFET power tube 31 and the second double-sided heat dissipation MOSFET power tube 32 are both connected to the output pin TG1 of the first control signal of the dual-phase power supply main control chip 2; the drains of the first double-sided heat dissipation MOSFET power tube 31 and the second double-sided heat dissipation MOSFET power tube 32 are both connected to the input voltage; the sources of the first double-sided heat dissipation MOSFET power tube 31 and the second double-sided heat dissipation MOSFET power tube 32 are both connected to the output pin SW1 of the third control signal of the dual-phase power supply main control chip 2; the gates of the third double-sided heat dissipation MOSFET power tube 41 and the fourth double-sided heat dissipation MOSFET power tube 42 are both connected to the output pin BG1 of the second control signal of the dual-phase power supply main control chip 2; the drains of the third double-sided heat dissipation MOSFET power tube 41 and the fourth double-sided heat dissipation MOSFET power tube 42 are both connected to the output pin SW1 of the third control signal of the dual-phase power supply main control chip 2; the sources of the third double-sided heat dissipation MOSFET power tube 41 and the fourth double-sided heat dissipation MOSFET power tube 42 are both grounded; one end of the first main power inductor 7 is connected to the output pin SW1 of the third control signal of the dual-phase power supply main control chip 2, and the other end of the first main power inductor 7 is used as the output end of the first-phase (phase A) power supply to output the phase A output voltage. As Figure 5 shown in the main power half-bridge circuit of the second-phase power supply: the gates of the fifth double-sided heat dissipation MOSFET power tube 51 and the sixth double-sided heat dissipation MOSFET power tube 52 are both connected to the output pin TG2 of the fourth control signal of the dual-phase power supply main control chip 2; the drains of the fifth double-sided heat dissipation MOSFET power tube 51 and the sixth double-sided heat dissipation MOSFET power tube 52 are both connected to the input voltage; the sources of the fifth double-sided heat dissipation MOSFET power tube 51 and the sixth double-sided heat dissipation MOSFET power tube 52 are both connected to the output pin SW2 of the sixth control signal of the dual-phase power supply main control chip 2; the gates of the seventh double-sided heat dissipation MOSFET power tube 61 and the eighth double-sided heat dissipation MOSFET power tube 62 are both connected to the output pin BG1 of the fifth control signal of the dual-phase power supply main control chip 2; the drains of the seventh double-sided heat dissipation MOSFET power tube 61 and the eighth double-sided heat dissipation MOSFET power tube 62 are both connected to the output pin SW2 of the sixth control signal of the dual-phase power supply main control chip 2; the sources of the seventh double-sided heat dissipation MOSFET power tube 61 and the eighth double-sided heat dissipation MOSFET power tube 62 are both grounded; one end of the second main power inductor 8 is connected to the output pin SW2 of the sixth control signal of the dual-phase power supply main control chip 2, and the other end of the second main power inductor 8 is used as the output end of the second-phase (phase B) power supply to output the phase B output voltage. The more specific circuit description is as follows: In the dual-phase power supply designed by the present invention, the drain (D), source (S), and gate (G) terminals of the same name of the first double-sided heat dissipation MOSFET power transistor 31 and the second double-sided heat dissipation MOSFET power transistor 32 are connected in one-to-one correspondence. The first double-sided heat dissipation MOSFET power transistor 31 and the second double-sided heat dissipation MOSFET power transistor 32 are designed in parallel and together constitute the first upper transistor circuit 3 in the main power half-bridge circuit of the first-phase power supply. In a similar connection manner, the drain (D), source (S), and gate (G) terminals of the same name of the fifth double-sided heat dissipation MOSFET power transistor 51 and the sixth double-sided heat dissipation MOSFET power transistor 52 in the dual-phase power supply designed by the present invention are connected in one-to-one correspondence. The fifth double-sided heat dissipation MOSFET power transistor 51 and the sixth double-sided heat dissipation MOSFET power transistor 52 are designed in parallel and together constitute the second upper transistor circuit 5 in the main power half-bridge circuit of the second-phase power supply. The D terminals of the first double-sided heat dissipation MOSFET power transistor 31 and the second double-sided heat dissipation MOSFET power transistor 32 connected together are also connected to the D terminals of the fifth double-sided heat dissipation MOSFET power transistor 51 and the sixth double-sided heat dissipation MOSFET power transistor 52 connected together, and together serve as the input terminal of the dual-phase power supply based on double-sided heat dissipation MOSFET designed by the present invention to receive an external input voltage. The drain (D), source (S), and gate (G) terminals of the same name of the third double-sided heat dissipation MOSFET power transistor 41 and the fourth double-sided heat dissipation MOSFET power transistor 42 in the dual-phase power supply designed by the present invention are connected in one-to-one correspondence. The third double-sided heat dissipation MOSFET power transistor 41 and the fourth double-sided heat dissipation MOSFET power transistor 42 are designed in parallel and together constitute the first lower transistor circuit 4 in the main power half-bridge circuit of the first-phase power supply. The D terminal of the third double-sided heat dissipation MOSFET power transistor 41 and the fourth double-sided heat dissipation MOSFET power transistor 42 connected together is also connected to the S terminal of the first double-sided heat dissipation MOSFET power transistor 31 and the second double-sided heat dissipation MOSFET power transistor 32 connected together and is connected to one end of the first main power inductor 7. This node is also connected to the output pin SW1 of the third control signal of the dual-phase power supply main control chip 2 to receive a control signal from the dual-phase power supply main control chip 2. The other end of the first main power inductor 7 is connected to the output terminal of the A-phase power supply of the power supply designed by the present invention to provide an output voltage to the outside. The S terminal of the third double-sided heat dissipation MOSFET power transistor 41 and the fourth double-sided heat dissipation MOSFET power transistor 42 connected together is connected to the output ground of the A-phase power supply of the designed power supply.

[0023] In a similar manner, the same-named D, S, and G poles of the seventh double-sided heat dissipation MOSFET power transistor 61 and the eighth double-sided heat dissipation MOSFET power transistor 62 in the dual-phase power supply designed by the present invention are connected in one-to-one correspondence. The seventh double-sided heat dissipation MOSFET power transistor 61 and the eighth double-sided heat dissipation MOSFET power transistor 62 are designed in parallel and together constitute the second lower transistor circuit 6 in the main power half-bridge circuit of the designed second-phase power supply. The D poles of the seventh double-sided heat dissipation MOSFET power transistor 61 and the eighth double-sided heat dissipation MOSFET power transistor 62 connected together are also connected to the S poles of the fifth double-sided heat dissipation MOSFET power transistor 51 and the sixth double-sided heat dissipation MOSFET power transistor 52 connected together, and are connected to one end of the second main power inductor 8. This node is also connected to the output pin SW2 of the sixth control signal of the dual-phase power supply main control chip 2 to receive the control signal from the dual-phase power supply main control chip 2. The other end of the second main power inductor 8 is connected to the output end of the B-phase power supply of the power supply designed by the present invention to provide an output voltage to the outside. The S poles of the seventh double-sided heat dissipation MOSFET power transistor 61 and the eighth double-sided heat dissipation MOSFET power transistor 62 connected together are connected to the output ground of the B-phase power supply of the designed power supply.

[0024] In addition, the G poles of the first double-sided heat dissipation MOSFET power transistor 31 and the second double-sided heat dissipation MOSFET power transistor 32 connected together are also connected to the output pin TG1 of the first control signal of the dual-phase power supply main control chip 2 to receive the control signal provided by the dual-phase power supply main control chip 2 for the upper transistor circuit in the main power half-bridge circuit of the first-phase power supply. The G poles of the third double-sided heat dissipation MOSFET power transistor 41 and the fourth double-sided heat dissipation MOSFET power transistor 42 connected together are also connected to the output pin BG1 of the second control signal of the dual-phase power supply main control chip 2 to receive the control signal provided by the dual-phase power supply main control chip 2 for the lower transistor circuit in the main power half-bridge circuit of the first-phase power supply. In a similar connection manner, the G poles of the fifth double-sided heat dissipation MOSFET power transistor 51 and the sixth double-sided heat dissipation MOSFET power transistor 52 connected together are also connected to the output pin TG2 of the fourth control signal of the dual-phase power supply main control chip 2 to receive the control signal provided by the dual-phase power supply main control chip 2 for the upper transistor circuit in the main power half-bridge circuit of the second-phase power supply. The G poles of the seventh double-sided heat dissipation MOSFET power transistor 61 and the eighth double-sided heat dissipation MOSFET power transistor 62 connected together are also connected to the output pin BG2 of the fifth control signal of the dual-phase power supply main control chip 2 to receive the control signal provided by the dual-phase power supply main control chip 2 for the lower transistor circuit in the main power half-bridge circuit of the second-phase power supply.

[0025] According to the above connection manner, the power supply designed by the present invention realizes generating two output voltages of phase A and phase B under the same input voltage.

[0026] The dual-phase high-power density power supply based on a double-sided heat dissipation MOSFET designed by the present invention uses a single dual-phase power supply master control chip to generate the control signals required for two groups of main power half-bridge circuits. Among them, the control signals required for the first group of main power half-bridge circuits are respectively provided by the output pin TG1 of the first control signal and the output pin BG1 of the second control signal, controlling the regular on and off of the first double-sided heat dissipation MOSFET power tube 31, the second double-sided heat dissipation MOSFET power tube 32, the third double-sided heat dissipation MOSFET power tube 41, and the fourth double-sided heat dissipation MOSFET power tube 42 corresponding to the designed phase A power supply. Cooperating with the first main power inductor 7 corresponding to the designed phase A power supply, the external input voltage commonly input from the dual-phase power supply is converted into the required output voltage and output at the output end of the phase A power supply. Among them, the output pin SW1 of the third control signal of the dual-phase power supply master control chip 2 is connected to the midpoint of the first-phase power supply main power half-bridge circuit composed of the first double-sided heat dissipation MOSFET power tube 31, the second double-sided heat dissipation MOSFET power tube 32, the third double-sided heat dissipation MOSFET power tube 41, and the fourth double-sided heat dissipation MOSFET power tube 42, and cooperates with the first-phase power supply main power half-bridge circuit to adjust the power conversion of the phase A power supply. In a similar working mode, the control signals required for the second group of main power half-bridge circuits are respectively provided by the output pin TG2 of the fourth control signal and the output pin BG2 of the fifth control signal, controlling the regular on and off of the fifth double-sided heat dissipation MOSFET power tube 51, the sixth double-sided heat dissipation MOSFET power tube 52, the seventh double-sided heat dissipation MOSFET power tube 61, and the eighth double-sided heat dissipation MOSFET power tube 62 in the designed second-phase main power half-bridge circuit. Cooperating with the second main power inductor 8 of the designed phase B power supply, the external input voltage commonly input from the dual-phase power supply is converted into the required output voltage and output at the output end of the phase B power supply. Among them, the output pin SW2 of the sixth control signal of the dual-phase power supply master control chip 2 is connected to the midpoint of the second-phase power supply main power half-bridge circuit composed of the fifth double-sided heat dissipation MOSFET power tube 51, the sixth double-sided heat dissipation MOSFET power tube 52, the seventh double-sided heat dissipation MOSFET power tube 61, and the eighth double-sided heat dissipation MOSFET power tube 62, and cooperates with the second-phase power supply main power half-bridge circuit to adjust the power conversion of the phase B power supply.

[0027] Furthermore, the dual-phase high-power density power supply designed by the present invention can be a symmetric power supply with the same electrical specifications for each phase power supply; among them, the main power half-bridge circuits of the first-phase power supply and the second-phase power supply adopt the design method with the same power supply devices, the same circuit parameters, and the same layout; all the double-sided heat dissipation MOSFET power tubes in the main power half-bridge circuits of the first-phase power supply and the second-phase power supply adopt double-sided heat dissipation MOSFETs of the same model and the same specifications; the main power inductors in the main power half-bridge circuits of the first-phase power supply and the second-phase power supply both adopt power inductors of the same model and the same specifications. More specifically: The first double-sided heat dissipation MOSFET power transistor 31, the second double-sided heat dissipation MOSFET power transistor 32, the third double-sided heat dissipation MOSFET power transistor 41, the fourth double-sided heat dissipation MOSFET power transistor 42, the fifth double-sided heat dissipation MOSFET power transistor 51, the sixth double-sided heat dissipation MOSFET power transistor 52, the seventh double-sided heat dissipation MOSFET power transistor 61, and the eighth double-sided heat dissipation MOSFET power transistor 62 designed by the present invention preferably use double-sided heat dissipation MOSFET power transistors of the same model and specification. The first double-sided heat dissipation MOSFET power transistor 31 and the second double-sided heat dissipation MOSFET power transistor 32 use devices of the same model and the same specification, which is beneficial for the first double-sided heat dissipation MOSFET power transistor 31 and the second double-sided heat dissipation MOSFET power transistor 32 to act as parallel MOSFETs during circuit operation, pass currents of uniform magnitude, and jointly bear the current stress during circuit operation, thereby enhancing the current-carrying and heat dissipation advantages of the parallel use of the first double-sided heat dissipation MOSFET power transistor 31 and the second double-sided heat dissipation MOSFET power transistor 32. Similarly, the third double-sided heat dissipation MOSFET power transistor 41 and the fourth double-sided heat dissipation MOSFET power transistor 42 use devices of the same model and the same specification, which is beneficial for the third double-sided heat dissipation MOSFET power transistor 41 and the fourth double-sided heat dissipation MOSFET power transistor 42 to act as parallel MOSFETs during circuit operation, pass currents of uniform magnitude, and jointly bear the current stress during circuit operation, thereby enhancing the current-carrying and heat dissipation advantages of the parallel use of the third double-sided heat dissipation MOSFET power transistor 41 and the fourth double-sided heat dissipation MOSFET power transistor 42. Similar designs and effects are also reflected in the parallel fifth double-sided heat dissipation MOSFET power transistor 51, the sixth double-sided heat dissipation MOSFET power transistor 52, and the parallel seventh double-sided heat dissipation MOSFET power transistor 61 and the eighth double-sided heat dissipation MOSFET power transistor 62. In addition, it is also possible to design the first main power inductor 7 of the A-phase power supply and the second main power inductor 8 of the B-phase power supply to use devices of the same model and the same specification. It can be seen that when designing the A-phase power supply and the B-phase power supply of the present invention, other circuit devices, circuit parameters, and circuit layouts can be designed to be the same, so that the A-phase power supply and the B-phase power supply are symmetric power supplies with the same electrical specifications, simplifying the device selection design process of the double-phase symmetric power supply while improving the parameter consistency of the design of power supplies with similar specifications for each phase.

[0028] The design of the present invention uses a double-sided heat dissipation MOSFET power tube as the main power switch tube of the power supply circuit, and adopts a dual-phase power supply main control chip to provide the control signal of the designed dual-phase power supply, so as to realize the dual-phase power supply. In the dual-phase power supply designed by the present invention, the main power tube adopts a double-sided heat dissipation MOSFET power tube, which can reduce the temperature rise during the operation of the main power device of the power supply, and is beneficial to improving the power of the power supply designed by the present invention. In the design, a single main control power supply chip is adopted to realize the output of the dual-phase power supply, reducing the number of the designed dual-phase power supply control chip and its peripheral related devices, which is beneficial to reducing the size of the designed dual-phase power supply and improving the power density of the power supply. When designing the power supply, the design method of using the same power supply devices, the same circuit parameters and the same layout is adopted, and the designed dual-phase power supply simplifies the design time of the multi-phase power supply and improves the power supply design efficiency. In the dual-phase power supply circuit designed by the present invention, the main power switch tubes of the phase A power supply and the phase B power supply adopt double-sided heat dissipation MOSFET power tubes of the same model and the same specification, which not only unifies the selection of the power tubes during the power supply design, but also is beneficial to giving full play to the advantages of the parallel connection of the power tubes to improve the current-carrying capacity and reduce the temperature rise for the double-sided heat dissipation MOSFET power tubes used in parallel; at the same time, the selection design of the power devices of the same model and the same specification shortens the design cycle of the multi-phase power supply circuit with similar specifications. Particularly, for the design of the dual-phase power supply with the same output voltage and current, the main power inductors of the designed dual-phase power supply also adopt devices of the same model and the same specification, further reducing the difficulty of the device design selection of the overall dual-phase power supply circuit and optimizing the design cycle of the power supply. A symmetrical power supply structure is designed. The main power devices used in the design adopt devices of the same model and specification. The structures and circuit devices of each phase of the power supply are the same, making the power supply design more symmetrical and the overall temperature distribution of the dual-phase power supply more uniform. Through the design of the power supply circuit parameters, the thermal design is more convenient and the reliability of the power supply design is higher.

[0029] Figure 6 Schematically shows a top view of the dual-phase high power density power supply based on double-sided heat dissipation MOSFET proposed by the present invention. From Figure 6It can be seen that on the front side of the PCB board 1, at one end of the PCB board 1, the first double-sided heat dissipation MOSFET power tube 31 and the second double-sided heat dissipation MOSFET power tube 32 that constitute the first upper tube circuit 3 in the first-phase power main power half-bridge circuit are arranged side by side. Above the first double-sided heat dissipation MOSFET power tube 31 and the second double-sided heat dissipation MOSFET power tube 32, the first main power inductor 7 is arranged. Symmetric to the central area of the PCB board 1, in a similar design method, at the other end of the PCB board 1, the fifth double-sided heat dissipation MOSFET power tube 51 and the sixth double-sided heat dissipation MOSFET power tube 52 that constitute the second upper tube circuit 5 in the second-phase power main power half-bridge circuit are arranged side by side. Above the fifth double-sided heat dissipation MOSFET power tube 51 and the sixth double-sided heat dissipation MOSFET power tube 52, the second main power inductor 8 is arranged. In the central area of the front side of the PCB board 1, a first area 91 is arranged, and this first area 91 is used to arrange some peripheral related control components, which can be peripheral related control resistor and capacitor components of the two-phase power main control chip 2, etc.

[0030] Figure 7 Schematically shows a bottom view of the two-phase high power density power supply based on double-sided heat dissipation MOSFET proposed by the present invention. From Figure 7 It can be seen that on the back side of the PCB board 1 corresponding to the first upper tube circuit 3 in the first-phase power main power half-bridge circuit, the third double-sided heat dissipation MOSFET power tube 41 and the fourth double-sided heat dissipation MOSFET power tube 42 that constitute the first lower tube circuit 4 in the first-phase power main power half-bridge circuit are arranged side by side. Similarly, on the back side of the PCB board 1 corresponding to the second upper tube circuit 5 in the second-phase power main power half-bridge circuit, the seventh double-sided heat dissipation MOSFET power tube 61 and the eighth double-sided heat dissipation MOSFET power tube 62 that constitute the second lower tube circuit 6 in the second-phase power main power half-bridge circuit are arranged side by side. In the central area of the back side of the PCB board 1, the two-phase power main control chip 2 is arranged, and a second area 92 is arranged around the two-phase power main control chip 2. This second area 92 is used to arrange some peripheral related control components, which can be peripheral related control resistor and capacitor components of the two-phase power main control chip 2, etc.

[0031] Figure 8Schematically shows a side view of the dual-phase high-power density power supply based on a double-sided heat dissipation MOSFET proposed by the present invention, from which the positional relationship of each device in the dual-phase power supply can be seen as a whole. The overall dual-phase power supply design adopts the following method: with the dual-phase power supply master control chip as the center, each phase of the power supply is symmetrically distributed on both sides. This design method can well isolate and distinguish the power control circuit part and the power circuit part of the designed dual-phase power supply, avoid mutual interference between the control circuit of the designed dual-phase power supply and the power circuits of each phase of the power supply, and enhance the circuit reliability of the designed dual-phase power supply. At the same time, taking the center of the PCB board as the power control circuit area and the two ends of the PCB board as the power circuit areas, when the designed dual-phase power supply circuit works, the heat generated by the main heat-generating devices, namely power transistors and power inductors, can be dispersed and distributed around the PCB board, which is conducive to power supply heat dissipation and also avoids the influence of excessive power supply heat on the power control circuit part, improving the design reliability of the overall designed dual-phase power supply.

[0032] The dual-phase power supply designed by the present invention is symmetrically designed with the center of the PCB board as a whole, and the A-phase power supply and the B-phase power supply are correspondingly distributed at both ends. Moreover, the upper transistor circuit and the lower transistor circuit of the main power half-bridge circuit of each phase of the power supply are also symmetrically distributed on the front and back sides of the PCB board. The overall layout of the dual-phase power supply designed by the present invention is centrosymmetric as a whole and symmetrically designed with the PCB board locally, which can make the temperature rise generated when each part of the overall power supply works more uniform, avoid the device temperature in some areas of the dual-phase power supply being too high, and reduce the risk of device damage during use. And the symmetric structure also simplifies the thermal design process of the designed dual-phase power supply. Exemplarily, the thermal design parameters and structure of the A-phase power supply in the designed dual-phase power supply can be selectively used as the thermal design parameters and structure of the B-phase power supply in the designed dual-phase power supply, or design fine-tuning can be carried out.

[0033] It should be noted that the present invention takes the dual-phase power supply design as an example to elaborate on the implementation of the solution in detail. However, the design concept of the dual-phase high-power density power supply based on the double-sided heat dissipation MOSFET proposed by the present invention can be extended to the multi-phase power supply design. The difference is that as Figure 5 shown, the specific circuit can be extended to implement a multi-phase power supply. The design adopts a multi-phase power supply master control chip, referring to the circuit design implementation method of the dual-phase power supply of the present invention, and arranging the devices of the multi-phase power supply on the PCB board in a similar way to the corresponding devices in the dual-phase power supply design, so as to meet the design requirements of low temperature rise, multi-phase output, large current output, and high power density.

[0034] In summary, the dual-phase high-power density power supply based on double-sided heat dissipation MOSFET proposed in the embodiments of the present invention can meet the design requirements of low temperature rise, dual-phase output, large current output, and high power density. In the design, double-sided heat dissipation MOSFET power tubes are ingeniously designed. Not only can the PCB board located under the double-sided heat dissipation MOSFET be used to transfer the heat generated during the operation of the MOSFET, but also the power inductor closely attached above the double-sided heat dissipation MOSFET can transfer the heat generated during the operation of the MOSFET power tube. This power supply design realizes the conduction of heat in multiple directions, greatly reducing the temperature rise of the MOSFET power tube during operation, ensuring the design reliability of the main power devices of the power supply, and enabling the MOSFET power tube to conduct a larger current. Without increasing the MOSFET package, the power density of the designed power supply is improved. In the design of the present invention, the main power inductors of each phase of the power supply are arranged above the corresponding double-sided heat dissipation MOSFET power tubes of each phase. This way of mounting the main power inductor on the top surface of the double-sided heat dissipation MOSFET utilizes the longitudinal space above the double-sided heat dissipation MOSFET power tube, saving the board area on the PCB board while facilitating the rapid transfer of heat during the operation of the double-sided heat dissipation MOSFET, thereby improving the power density of the designed power supply. In the design of the present invention, a dual-phase power supply control chip is used as the main control chip of the circuit. Combining the double-sided heat dissipation MOSFET power tubes and the corresponding main power inductors of each phase of the power supply symmetrically distributed on the PCB board, the output of the dual-phase power supply is designed and realized under the control of a single main control power supply chip, reducing the number of power supply circuit devices; the dual-phase power supply control chip is located in the center of the PCB board, and the main power circuits of the two phases of the power supply are symmetrically distributed, separating the power control circuit part from the main power circuit part of each phase of the power supply, dispersing the heat from each other, and not interfering with each other during operation, improving the design reliability of each part of the power supply circuit. At the same time, this power supply design can make the overall temperature distribution of the power supply more uniform, facilitating the heat dissipation treatment of the dual-phase power supply, avoiding the temperature rise aggregation at the location where the power control circuit part is located, and improving the design reliability of the power supply. Generally speaking, the power supply designed in the present invention uses double-sided heat dissipation MOSFET power tubes for multi-directional heat transfer, resulting in a low temperature rise during device operation and enabling a larger current to be conducted. The main control chip of the power supply selects a dual-phase power supply control chip, and the circuit layout is symmetrically designed. While realizing the dual-phase power supply voltage output, the number of power supply circuit devices is saved, and the symmetrical distribution improves the design reliability of each part of the power supply circuit while also facilitating the uniform distribution of the overall power supply temperature. Moreover, the main power inductors in the power supply circuit are arranged above the double-sided heat dissipation MOSFET power tubes, saving the board area occupied by the devices on the PCB board. From the above aspects, the low temperature rise and integration of the power supply design are improved, and the design reliability and power density of the overall power supply are enhanced.

[0035] In the description of the present invention, it should be understood that the terms "first" and "second" are used for descriptive purposes only and cannot be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, features defined with "first" and "second" may explicitly or implicitly include one or more of such features. In the description of the present invention, "a plurality of" means two or more, unless otherwise specifically defined.

[0036] Although the present invention has been described in conjunction with various embodiments, however, in the process of implementing the claimed invention, those skilled in the art can understand and achieve other variations of the disclosed embodiments by referring to the specification and its drawings. In the specification, the term "comprising" does not exclude other components or steps, and "a" or "one" does not exclude a plurality of cases. Certain measures are recited in different embodiments, but this does not mean that these measures cannot be combined to produce good results.

[0037] The above content is a further detailed description of the present invention in conjunction with specific preferred embodiments, and it cannot be determined that the specific implementation of the present invention is limited only to these descriptions. For those of ordinary skill in the technical field to which the present invention pertains, without departing from the concept of the present invention, several simple deductions or substitutions can be made, and all should be regarded as belonging to the protection scope of the present invention.

Claims

1. A dual-phase high-power density power supply based on a double-sided heat dissipation MOSFET, characterized in that The dual-phase high-power density power supply includes: A dual-phase power supply main control chip for generating control signals for each phase of the power supply; A first-phase power supply main power half-bridge circuit and a second-phase power supply main power half-bridge circuit for generating the output voltage corresponding to each phase of the power supply according to the control signals; the first-phase power supply main power half-bridge circuit and the second-phase power supply main power half-bridge circuit are respectively designed based on a number of double-sided heat dissipation MOSFET power tubes and a main power inductor; Among them, the dual-phase power supply main control chip is disposed in the central area on the back of the PCB board, and the first-phase power supply main power half-bridge circuit and the second-phase power supply main power half-bridge circuit are symmetrically disposed in the two end areas of the PCB board; the first-phase power supply main power half-bridge circuit includes a first upper tube circuit, a first lower tube circuit and a first main power inductor, and the second-phase power supply main power half-bridge circuit includes a second upper tube circuit, a second lower tube circuit and a second main power inductor. The first upper tube circuit, the second upper tube circuit, the first lower tube circuit and the second lower tube circuit are respectively designed based on a number of double-sided heat dissipation MOSFET power tubes, and all the double-sided heat dissipation MOSFET power tubes constituting the first upper tube circuit and the second upper tube circuit are disposed on the front of the PCB board, and all the double-sided heat dissipation MOSFET power tubes constituting the first lower tube circuit and the second lower tube circuit are disposed on the back of the PCB board. The first main power inductor is disposed above all the double-sided heat dissipation MOSFET power tubes constituting the first upper tube circuit, and the second main power inductor is disposed above all the double-sided heat dissipation MOSFET power tubes constituting the second upper tube circuit, utilizing the longitudinal space above the first upper tube circuit and the second upper tube circuit without occupying the area of the PCB board.

2. The dual-phase high-power density power supply based on a double-sided heat dissipation MOSFET according to claim 1, wherein The dual-phase power supply main control chip includes six output pins for control signals, where three output pins for control signals are used to control the switching states of all the double-sided heat dissipation MOSFET power tubes in the first-phase power supply main power half-bridge circuit, and the other three output pins for control signals are used to control the switching states of all the double-sided heat dissipation MOSFET power tubes in the second-phase power supply main power half-bridge circuit.

3. The dual-phase high-power density power supply based on a double-sided heat dissipation MOSFET according to claim 2, wherein The first-phase power supply main power half-bridge circuit includes a first double-sided heat dissipation MOSFET power tube, a second double-sided heat dissipation MOSFET power tube, a third double-sided heat dissipation MOSFET power tube, a fourth double-sided heat dissipation MOSFET power tube and a first main power inductor; among them, The first double-sided heat dissipation MOSFET power tube and the second double-sided heat dissipation MOSFET power tube constitute the first upper tube circuit; the first double-sided heat dissipation MOSFET power tube and the second double-sided heat dissipation MOSFET power tube are arranged side by side on the front of the PCB board; The third double-sided heat dissipation MOSFET power tube and the fourth double-sided heat dissipation MOSFET power tube constitute the first lower tube circuit; the third double-sided heat dissipation MOSFET power tube and the fourth double-sided heat dissipation MOSFET power tube are arranged side by side on the back of the PCB board; The first main power inductor is disposed above the first double-sided heat dissipation MOSFET power tube and the second double-sided heat dissipation MOSFET power tube.

4. The dual-phase high-power density power supply based on a double-sided heat dissipation MOSFET according to claim 3, wherein, In the first-phase power supply main power half-bridge circuit: The gates of the first double-sided heat dissipation MOSFET power tube and the second double-sided heat dissipation MOSFET power tube are both connected to the output pin of the first control signal of the dual-phase power supply main control chip. The drains of the first double-sided heat dissipation MOSFET power tube and the second double-sided heat dissipation MOSFET power tube are both connected to the input terminal of the input voltage. The sources of the first double-sided heat dissipation MOSFET power tube and the second double-sided heat dissipation MOSFET power tube are both connected to the output pin of the third control signal of the dual-phase power supply main control chip; The gates of the third double-sided heat dissipation MOSFET power tube and the fourth double-sided heat dissipation MOSFET power tube are both connected to the output pin of the second control signal of the dual-phase power supply main control chip. The drains of the third double-sided heat dissipation MOSFET power tube and the fourth double-sided heat dissipation MOSFET power tube are both connected to the output pin of the third control signal of the dual-phase power supply main control chip. The sources of the third double-sided heat dissipation MOSFET power tube and the fourth double-sided heat dissipation MOSFET power tube are both grounded; One end of the first main power inductor is connected to the output pin of the third control signal of the dual-phase power supply main control chip, and the other end of the first main power inductor serves as the output terminal of the first-phase power supply.

5. The dual-phase high-power density power supply based on a double-sided heat dissipation MOSFET according to claim 2, wherein, The second-phase power supply main power half-bridge circuit includes a fifth double-sided heat dissipation MOSFET power tube, a sixth double-sided heat dissipation MOSFET power tube, a seventh double-sided heat dissipation MOSFET power tube, an eighth double-sided heat dissipation MOSFET power tube, and a second main power inductor; among them, The fifth double-sided heat dissipation MOSFET power tube and the sixth double-sided heat dissipation MOSFET power tube constitute the second upper tube circuit; the fifth double-sided heat dissipation MOSFET power tube and the sixth double-sided heat dissipation MOSFET power tube are arranged side by side on the front side of the PCB board; The seventh double-sided heat dissipation MOSFET power tube and the eighth double-sided heat dissipation MOSFET power tube constitute the second lower tube circuit; the seventh double-sided heat dissipation MOSFET power tube and the eighth double-sided heat dissipation MOSFET power tube are arranged side by side on the back side of the PCB board; The second main power inductor is disposed above the fifth double-sided heat dissipation MOSFET power tube and the sixth double-sided heat dissipation MOSFET power tube.

6. The dual-phase high-power density power supply based on a double-sided heat dissipation MOSFET according to claim 5, wherein In the second-phase power supply main power half-bridge circuit: The gates of the fifth double-sided heat dissipation MOSFET power tube and the sixth double-sided heat dissipation MOSFET power tube are both connected to the output pin of the fourth control signal of the dual-phase power supply main control chip. The drains of the fifth double-sided heat dissipation MOSFET power tube and the sixth double-sided heat dissipation MOSFET power tube are both connected to the input terminal of the input voltage. The sources of the fifth double-sided heat dissipation MOSFET power tube and the sixth double-sided heat dissipation MOSFET power tube are both connected to the output pin of the sixth control signal of the dual-phase power supply main control chip; The gates of the seventh double-sided heat dissipation MOSFET power tube and the eighth double-sided heat dissipation MOSFET power tube are both connected to the output pin of the fifth control signal of the dual-phase power supply main control chip. The drains of the seventh double-sided heat dissipation MOSFET power tube and the eighth double-sided heat dissipation MOSFET power tube are both connected to the output pin of the sixth control signal of the dual-phase power supply main control chip. The sources of the seventh double-sided heat dissipation MOSFET power tube and the eighth double-sided heat dissipation MOSFET power tube are both grounded; One end of the second main power inductor is connected to the output pin of the sixth control signal of the dual-phase power supply main control chip, and the other end of the second main power inductor serves as the output terminal of the second-phase power supply.

7. The dual-phase high-power density power supply based on a double-sided heat dissipation MOSFET according to claim 1, characterized in that, All the double-sided heat dissipation MOSFET power tubes in the first upper tube circuit, the second upper tube circuit, the first lower tube circuit, and the second lower tube circuit have a bottom heat dissipation pad and a top heat dissipation pad; among them, The bottom heat dissipation pad of each double-sided heat dissipation MOSFET power tube in the first upper tube circuit is attached to the PCB board, and the top heat dissipation pad is attached to the first main power inductor; The bottom heat dissipation pad of each double-sided heat dissipation MOSFET power tube in the second upper tube circuit is attached to the PCB board, and the top heat dissipation pad is attached to the second main power inductor; The bottom heat dissipation pad of each double-sided heat dissipation MOSFET power tube in the first lower tube circuit and the second lower tube circuit is attached to the PCB board, and the top heat dissipation pad is selectively attached to the radiator according to the heat dissipation requirement.

8. The dual-phase high-power density power supply based on a double-sided heat dissipation MOSFET according to claim 7, wherein For all the double-sided heat dissipation MOSFET power tubes in the first upper tube circuit, each top heat dissipation pad is attached to the first main power inductor through a heat conductive material; For all the double-sided heat dissipation MOSFET power tubes in the second upper tube circuit, each top heat dissipation pad is attached to the second main power inductor through a heat conductive material.

9. The dual-phase high-power density power supply based on a double-sided heat dissipation MOSFET according to claim 1, characterized in that, Radiators are attached to the main power inductors in both the first-phase power main power half-bridge circuit and the second-phase power main power half-bridge circuit.

10. The dual-phase high-power density power supply based on a double-sided heat dissipation MOSFET according to claim 1, wherein The dual-phase high-power density power supply is a symmetric power supply with the same electrical specifications for each phase power supply; among them, The first-phase power main power half-bridge circuit and the second-phase power main power half-bridge circuit adopt the design method with the same power supply devices, the same circuit parameters, and the same layout; All the double-sided heat dissipation MOSFET power tubes in the first-phase power main power half-bridge circuit and the second-phase power main power half-bridge circuit adopt double-sided heat dissipation MOSFETs of the same model and the same specification; The main power inductors in the first-phase power main power half-bridge circuit and the second-phase power main power half-bridge circuit adopt power inductors of the same model and the same specification.

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