Dual-wavelength laser

Abstract

A method of manufacturing a semiconductor device, the method comprising: providing a first semiconductor layer; forming a first laser on the first semiconductor layer, wherein the first laser is used for emitting at a first frequency; removing a portion of the first laser formed on the first semiconductor layer; forming a second laser on the first semiconductor layer by using a butt coupling growth technology, wherein the second laser is used for emitting at a second frequency; wherein the first laser and the second laser are optically isolated from each other. A semiconductor device is also described herein.

Description

Technical Field

[0001] The present invention relates to a semiconductor device composed of dual-wavelength lasers sharing a common semiconductor wafer and a method for manufacturing the semiconductor device. Background Art

[0002] In the communication industry, the passive optical network (PON) market is a multi-billion-dollar market, which includes the application of lasers as part of semiconductor devices. Specifically, in the field of passive optical networks, distributed feedback lasers (DFBs) and electroabsorption modulated (EML) lasers are known. However, it is difficult to integrate multiple lasers into a system as a part. When multiple lasers are used as part of a system, their wavelengths are usually very different, so it is difficult and troublesome to integrate them into a single system. A common solution to this problem is to fabricate separate wafers / chips for each laser operating at different wavelengths and then package them separately. For two lasers, this typically requires co-packaging two separate semiconductor wafers / chips or packaging them in separate transistor outline cans (TO-CANs). Using this method requires two separately packaged chips and two TO-CANs, so this method is time-consuming. In addition, known configurations for integrating multiple lasers into a single system require multiple modules, which in turn require a large amount of space because multiple chips must be used. This results in large-sized components, more expensive devices, and time-consuming and laborious manufacturing.

[0003] Therefore, an object of the present invention is to solve the above technical problems by providing the semiconductor device and manufacturing method as described herein. Summary of the Invention

[0004] According to a first aspect of the present invention, there is provided a semiconductor device, the device comprising: a first semiconductor layer; two or more lasers for emitting at different frequencies and formed on the first semiconductor layer; wherein the two or more lasers are optically isolated from each other. This enables the size and cost of the semiconductor device including multiple lasers to be reduced exponentially.

[0005] According to another aspect of the above semiconductor device, the device further comprises: a second semiconductor layer, wherein the two or more lasers are located between the first semiconductor layer and the second semiconductor layer. This enables the semiconductor device to better control the flow of current.

[0006] According to another aspect of the semiconductor device described above, the device further includes: one or more diffraction gratings located between the two or more lasers and the second semiconductor. This enables the semiconductor device to emit light of only the desired wavelength.

[0007] According to another aspect of the semiconductor device described above, each of the one or more diffraction gratings is associated with a different one of the two or more lasers. This enables the device to customize the output of each laser.

[0008] According to another aspect of the semiconductor device described above, the two or more lasers are separated by at least one gap on the first semiconductor layer. This provides improved interference properties between the two or more lasers.

[0009] According to another aspect of the semiconductor device described above, at least a portion of the at least one gap is at least partially at a 45-degree angle to the first semiconductor layer to change the optical path to be perpendicular to the longitudinal direction of the first semiconductor layer and toward the second semiconductor layer. This enables the light emitted by the two or more lasers to be redirected within the semiconductor device.

[0010] According to another aspect of the semiconductor device described above, the device further includes: a reflector located within the at least one gap on the first surface of the first semiconductor layer, the reflector including two or more surfaces that are at a 45-degree angle to the first semiconductor layer to change the optical path to be perpendicular to the longitudinal direction of the first semiconductor layer and toward the second semiconductor layer; wherein the width of the at least one gap is uniform. This enables the light emitted by the two or more lasers to be redirected within the semiconductor device through an alternative configuration.

[0011] According to another aspect of the semiconductor device described above, the device further includes: a reflective coating applied at the boundary between the two or more lasers. This reduces interference between the two or more lasers and helps to achieve a configuration for emitting a beam in the longitudinal direction of the device and the first semiconductor layer.

[0012] According to another aspect of the semiconductor device described above, the device further includes a lens for focusing the light emitted from one or more of the two or more lasers. This enables the beams of the multiple lasers to be focused simultaneously and reduces the size of the device.

[0013] According to another aspect of the semiconductor device described above, the first semiconductor layer is an n-doped layer and / or the second semiconductor layer is a p-doped layer. This enables the semiconductor device to better control the flow of current.

[0014] According to another aspect of the semiconductor device described above, the device further comprises: a first metal layer formed on the first semiconductor layer such that the first semiconductor layer is located between the first metal layer and the two or more lasers; a second metal layer formed on a portion of the second semiconductor layer such that the second semiconductor layer is located between the second metal layer and the two or more lasers. This allows current to be injected into the semiconductor device.

[0015] According to another aspect of the semiconductor device described above, the device further comprises: at least one first coating formed on at least a portion of each side surface of the device, the side surface of the device being a surface perpendicular to the first semiconductor layer and facing the second semiconductor layer; at least one second coating formed on the second semiconductor layer such that the second semiconductor layer is located between the second coating and the two or more lasers; wherein the first coating is more reflective than the second coating. This allows the light emitted from the lasers to be contained within the device and to exit the device at an appropriate location.

[0016] According to another aspect of the present invention, there is provided a method of manufacturing a semiconductor device, the method comprising: providing a first semiconductor layer; forming a first laser on the first semiconductor layer, the first laser being configured to emit at a first frequency; removing a portion of the first laser formed on the first semiconductor layer; forming a second laser on the first semiconductor layer using butt-joint coupling growth technology, the second laser being configured to emit at a second frequency;

[0017] wherein the first laser and the second laser are optically isolated from each other. This allows the size and cost of a semiconductor device comprising multiple lasers to be reduced multiplicatively.

[0018] According to another aspect of the manufacturing method described above, the method further comprises the step of: providing a second semiconductor layer, the position of the second semiconductor layer being such that the first laser and the second laser are located between the first semiconductor layer and the second semiconductor layer. This allows the semiconductor device to better control the flow of current.

[0019] According to another aspect of the manufacturing method described above, the method further comprises the step of: providing one or more diffraction gratings located between the second semiconductor layer and the two or more lasers. This allows the semiconductor device to emit only light of a desired wavelength.

[0020] According to another aspect of the above manufacturing method, the method further comprises the step of removing a portion of the first laser and / or the second laser such that the first laser and the second laser are separated by at least one gap. This provides improved interference properties between the two or more lasers.

[0021] According to another aspect of the above manufacturing method, the portion removed from the first laser and / or the second laser is a portion at the butt-coupling interface between the first laser and the second laser. This provides improved interference properties between the two or more lasers.

[0022] According to another aspect of the above manufacturing method, when removing a portion of the first laser and / or the second laser, at least a portion of the at least one gap is at least partially at a 45-degree angle to the first semiconductor layer to change the optical path to be perpendicular to the longitudinal direction of the first semiconductor layer and towards the second semiconductor layer. This causes the light emitted by the two or more lasers to be redirected within the semiconductor device.

[0023] According to another aspect of the above manufacturing method, the method further comprises: providing a reflector located within the at least one gap on the first semiconductor layer, the reflector comprising two or more surfaces that are at a 45-degree angle to the first semiconductor layer to change the optical path to be perpendicular to the longitudinal direction of the first semiconductor layer and towards the second semiconductor layer; wherein, when removing a portion of the first laser and / or the second laser, the width of the at least one gap is uniform. This enables the light emitted by the two or more lasers to be redirected within the semiconductor device through an alternative configuration.

[0024] According to another aspect of the above manufacturing method, the method further comprises the step of applying a reflective coating at the boundary between the two or more lasers. This reduces interference between the two or more lasers and helps to achieve a configuration for emitting a beam in the longitudinal direction of the device and the first semiconductor layer.

[0025] According to another aspect of the above manufacturing method, the removal of a portion of the first laser is performed by facet etching. This helps to accurately remove a portion of the material from the device while retaining another portion of the material.

[0026] According to another aspect of the above manufacturing method, the method further comprises the steps of: applying a first metal layer to the first semiconductor layer such that the first semiconductor layer is located between the first metal layer and the first laser and / or the second laser; applying a second metal layer to a portion of the second semiconductor layer such that the second semiconductor layer is located between the second metal layer and the first laser and / or the second laser. This enables current to be injected into the semiconductor device.

[0027] According to another aspect of the above manufacturing method, the method further comprises the steps of: applying at least one first coating to at least a portion of each side surface of the device, the side surface of the device being a surface perpendicular to the first semiconductor layer and facing the second semiconductor layer; applying at least one second coating to the second semiconductor layer such that the second semiconductor layer is located between the at least one second coating and the first laser and / or the second laser; wherein the first coating is more reflective than the second coating. This enables the light emitted from the laser to be contained within the device and exit the device at an appropriate location. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] The present invention will now be described by way of example in conjunction with the accompanying drawings. In the drawings:

[0029] Figures 1A to 1H The semiconductor device of the present invention is shown at each stage of the manufacturing method of the present invention;

[0030] Figure 2 The manufacturing method of the semiconductor device of the present invention is shown;

[0031] Figure 3 An alternative configuration of the semiconductor device of the present invention is shown, which includes four lasers;

[0032] FIG. 4 shows an alternative configuration of the semiconductor device of the present invention, in which the light beam is emitted from the semiconductor device in an alternative direction;

[0033] Figure 5 An alternative configuration of the semiconductor device of the present invention is shown, in which reflectors are used to deflect the light from each laser. DETAILED DESCRIPTION

[0034] Embodiments of the system will now be described in conjunction with the accompanying drawings.

[0035] The present invention proposes a new solution to the above technical problems. Specifically, the present invention provides a method for forming multiple lasers on a single semiconductor wafer. The present invention also provides a device composed of two or more lasers formed on a single semiconductor wafer to reduce the cost and size of a passive optical network device composed of multiple lasers. Although the multiple lasers are formed on a common semiconductor layer, they are optically isolated from each other, which will be discussed later. The proposed method can integrate multiple lasers (e.g., distributed feedback lasers (DFB)) or electro absorption modulated lasers (EML) with different wavelengths onto a single chip. This enables the application of multiple lasers to require only one package, saving cost and space.

[0036] Figures 1A to 1H Stages of forming the semiconductor device of the present invention are shown. Figure 2 Each step of the manufacturing method shown in Figures 1A to 1H is described in combination with the device formed at each stage shown in Figure 1A A semiconductor device 100 is shown, and the semiconductor device 100 is composed of a first semiconductor layer 101 and a first laser (L1) 110 for emitting at a first frequency. In Figure 1A the first step and the second step in the manufacturing process are shown. In the first step S201, the first semiconductor layer 101 is provided, and then in the second step S202, the first laser 110 is formed on the first semiconductor layer 101. In the second step S202, the first laser 110 can be formed on the first semiconductor layer 101 using epitaxial growth technology. And it can be formed on the whole or part of the first semiconductor layer 101. Among them, the laser can be formed on the surface of the first semiconductor layer 101 including a multiple quantum well (MQW) layer and can be composed of a buried heterojunction structure with a p-n current blocking layer. The first laser 110 of the present invention can be a distributed feedback laser (DFB) or an electro absorption modulated laser (EML) or an EML with a semiconductor optical amplifier (SOA). The first semiconductor layer 101 can include multiple layers, such as more than one layer, and can include one or more n-doped layers, and the n-doped layers are used to form the semiconductor device 100. The material can be InP, GaAs, GaN, or other semiconductor materials.

[0037] Figure 1B Shows the next step S203 of the manufacturing method of the semiconductor device 100 of the present invention. In step S203, a part of the first laser 110 formed on the first semiconductor layer 101 is removed, so that a part of the first semiconductor layer 101 is exposed. This helps to form another laser on the first semiconductor layer 101. Figure 1B Shows the semiconductor device 100 after a part of the first laser 110 is removed. The part to be removed can be removed by etching away a part of the material of the first laser 110 formed on the first semiconductor layer 101. Known etching techniques, such as an optimized dry etching process, can be used to remove a part of the material of the first laser from the first semiconductor layer 101.

[0038] Once a part of the first laser 110 has been removed from the first semiconductor layer 101, Figure 1C Shows the fourth step S204 in the method of manufacturing the semiconductor device 100 of the present invention. Figure 1C Shows the configuration of the semiconductor device 100, in which a second laser (L2) 111 has been formed on the first semiconductor layer 101, so that the semiconductor device 101 now includes two lasers L1 and L2. The second laser 111 can be used to emit at a different frequency from the first laser 110 formed on the common first semiconductor layer 101. In some cases, more than two lasers can be formed on the same semiconductor layer 101 (for example, the first semiconductor layer), and each of these more than two lasers can be used to emit at a different frequency. When multiple lasers are formed on the first semiconductor layer 101, as Figure 1C and Figure 3 shown, preferably these lasers are optically isolated from each other. For the purposes of the present disclosure, optical isolation should be understood to mean that the light emitted from each laser is isolated from the light emitted from other lasers. In other words, the light emitted from the first laser 110 does not interfere with the light from the second laser 111 and subsequent lasers. This allows both lasers to operate without the light emitted by one interfering with the light emitted by the other. The second laser 111 can be the same type of laser as the first laser 110 discussed above, or a different type of laser. In some cases, the first laser 110 is used to emit at a wavelength between 1400 nm and 1500 nm, preferably between 1450 nm and 1500 nm, and most preferably at a wavelength of 1490 nm, while the second laser 111 is used to emit at a wavelength between 1501 nm and 1600 nm, preferably between 1550 nm and 1600 nm, and most preferably at a wavelength of 1577 nm. However, other different wavelengths can also be emitted by each laser.

[0039] A second laser or subsequent lasers can be formed on the first semiconductor layer 101 using butt-joint coupling growth technology to grow an epitaxial structure on the first semiconductor layer. Thus, the structure of the second laser 111 is grown using the butt-joint coupling process. In this way, multiple lasers can be formed on the first semiconductor layer 101. This can be step S204 in the method of manufacturing the semiconductor device 100 of the present invention, and the device shown in the present invention will be produced. Figure 1C In this way, the butt-joint coupling growth technology can be used to form other lasers on the first semiconductor layer 101 in the same manner as the second laser 111 is formed in step S204. Importantly, when the second laser or subsequent lasers are formed on the first semiconductor layer 101, as described above, each laser is optically isolated from each other. This can be achieved by providing a barrier or other known isolation techniques between the lasers on the first semiconductor layer 101.

[0040] In Figure 1D , the semiconductor device 100 is shown in one configuration in which one or more diffraction gratings G1, G2 can be provided for the semiconductor device 100, step S205. In Figure 1D , each of the first laser 110 and the second laser 111 is respectively provided with its own diffraction grating as the first diffraction grating 120 and the second diffraction grating 121. In the case where multiple gratings are employed in the device of the present invention, each diffraction grating can have a different grating period, which corresponds to the desired wavelength emitted by each laser. In some cases, the emission direction of the laser is in the plane of the longitudinal direction 10 of the first semiconductor layer 101, and there may be no grating in the device 100.

[0041] In some cases, the semiconductor device 100 can be provided with a second semiconductor layer 102, as Figure 1EStep S206 as shown. The position of the second semiconductor layer 102 can be such that two or more lasers are located between the first semiconductor layer 101 and the second semiconductor layer 102. In other words, the two semiconductor layers are used to "clamp" two or more lasers within the semiconductor device 100. When providing the second semiconductor layer 102, the optional manufacturing step S206 can include filling each laser with one or more epitaxially grown p-doped layers, and the p-doped layers can include metal contact layers. When one or more diffraction gratings are used as part of the semiconductor device, the one or more gratings are located between two or more lasers and the second semiconductor layer 102. When the semiconductor device 100 employs one or more diffraction gratings 120, 121, the same process used to provide the second semiconductor layer 102 is used, and the second semiconductor layer can be composed of one or more layers. For example, the second semiconductor layer can be one or more layers and can be composed of one or more p-doped layers, as Figure 1E shown. For simplicity, the present invention refers to the first semiconductor layer and the second semiconductor layer as single layers. However, it should be understood that the first conductor layer and the second semiconductor layer can each be composed of more than one layer. In addition, the first laser and the second laser can also be formed in layers. Therefore, in manufacturing step S203, when removing a part of the first laser, it may remove one layer out of the multiple layers of the first laser formed in the layer. The same applies to the second laser or subsequent lasers.

[0042] Once the second semiconductor layer is provided to the semiconductor device, as Figure 1E shown, then the wafer already constructed by the first semiconductor layer 101 is processed. A possible result of such processing can be seen in Figure 1F the present application. In step S207, a spacer 150 can be formed between two or more lasers L1, L2 on the first semiconductor layer 101 using a facet etching process, such that the two or more lasers are separated by the spacer 150. The way to create the spacer is to remove a part of the first laser and / or the second laser to create the spacer 150 between them. The part removed from the first laser 110 and / or the second laser 111 can be the part at the butt-coupling interface between the first laser 110 and the second laser 111. In other words, the interface between two or more lasers is formed when the second laser is provided by the butt-coupling growth technique.

[0043] In step S207, a portion of the material of the second semiconductor layer 102 is removed by a faceted etching process, removing one or more diffraction gratings G1, G2 (if present). In some cases, the removed material can be between the first laser 110 and the second laser 111, thus forming a uniform channel between the first diffraction grating 120 and the second diffraction grating 121, such that the second semiconductor layer 102 is segmented at the location where the material is removed. In the case of forming a uniform channel, the spacing 150 between the first laser 110 and the second laser 111 can be uniform, or the width can vary along the length of the channel forming the spacing 150. In some cases, when a portion of the first laser 110 and / or the second laser 111 is removed, at least a portion of at least one spacing 150 forms a 45-degree angle with at least a portion of the first semiconductor layer 101. This provides a surface that can change the optical path emitted from two or more lasers such that the optical path is perpendicular to the longitudinal direction 10 of the first semiconductor layer 101 and towards the second semiconductor layer 102. At least a portion of the angled spacing 150 is as Figure 1F shown. In this case, a portion of the spacing is formed by a channel with a uniform spacing 150, and another portion of the spacing 150 forms a 45-degree angle with the longitudinal direction of the first semiconductor layer 101 ( Figure 1F θ in). Another portion of the material is removed from each laser and / or grating and / or the second semiconductor layer 102 using an etching technique to form the desired angle.

[0044] Once the semiconductor device has been processed as described above and has undergone the above manufacturing steps, a first metal layer 130 (M1) can be applied to the first semiconductor layer 101 such that the first semiconductor layer 101 is located between the first metal layer 130 and the first laser and / or the second laser. In addition, one or more second metal layers 131 (M2) can also be applied to at least a portion of the second semiconductor layer 102 such that the second semiconductor layer 102 is located between the second metal layer 131 and the first laser L1 and / or the second laser L2. This configuration is shown in Figure 1G of the present invention and is shown by step S208 in Figure 2 . In Figure 1G , the diffraction gratings have been omitted to simplify the figure. However, it should be understood that the diffraction gratings G1, G2 (if present) are located at the same positions as shown in Figure 1F , between two or more lasers and the second semiconductor layer 102. As shown in Figure 1FAs shown, a configuration is illustrated in which there is a single first metal layer 130 applied to the first semiconductor layer 101, labeled as the bottom metal. However, the first metal layer 130 may alternatively be formed by a plurality of metal layers that are inlaid or stacked to be provided on the first semiconductor layer 101. Similarly, Figure 1F a plurality of "top metal" layers 131 are shown provided on the second semiconductor layer 102. It should be understood that the second metal layer 131 collectively includes these "top metal" layers 131 that are used to cover at least a portion of the second semiconductor layer 102. The first metal layer 130 and the second metal layer 131 enable the device to withstand current injection.

[0045] Finally, when the second metal layer 131 is provided on the second semiconductor layer 102, the uncovered portion of the second semiconductor layer 102 may have at least one second coating 140 applied thereto. In other words, another manufacturing step S209 may be performed in which at least one second coating 140 is applied to the second semiconductor layer 102 such that the second semiconductor layer 102 is located between the at least one second coating 140 and the first laser L1 and / or the second laser L2. Similarly, at least one first coating 141 may be applied to at least a portion of each side surface of the device, the side surface of the device being a surface perpendicular to the first semiconductor layer 101 and facing the second semiconductor layer 102. In some cases, the first coating 141 is more reflective than the second coating 140. The purpose of the at least one second coating 140 is to allow the light from each laser to exit the device for use. In this embodiment, the first coating 141 is highly reflective. In this embodiment, the purpose of the at least one first coating 141 is to reflect light along the longitudinal direction 10 of the first semiconductor layer 101 towards the center of the device such that it is directed by the angled portions of two or more lasers towards the at least one second coating 140 and can thus exit the device. The first coating 141 may be a high-reflection coating (HR coating), and the second coating 140 may be an anti-reflection coating (AR coating). The AR coating 140 is used to emit the light emitted by the device, such as a "window" in the device. The AR coating 140 only needs to provide a wide-spectrum coating to allow a wide range of light to pass through.

[0046] The semiconductor device itself or a system including the semiconductor device described herein may include a lens that may be used to focus the light emitted from one or both of two or more lasers. The advantage of using lasers that emit similar but different wavelengths is that in some cases, they can be focused by a single lens, thereby further reducing the size of the device 100.

[0047] It should be understood that Figure 2The method of the present invention described in [reference] can be adapted to reorder the steps shown. For example, the formation of the spacings in step S207 can occur before the provision of the diffraction grating and the second semiconductor layer in steps S205 and S206. In this case, portions of the diffraction grating and the second semiconductor of appropriate size can be provided to ensure that the formed spacings remain. Additionally, the method steps S205 to S209 shown in the dashed box are optional and not necessary for the method, particularly for providing multiple lasers on a single semiconductor wafer as described herein.

[0048] Figure 3 shows Figure 1F a plan view of the semiconductor device 100 shown in [reference], and also includes two additional lasers L3 and L4 to demonstrate one method for providing multiple lasers L1, L2, L3, and L4 on a single first semiconductor layer 101. Figure 3 The dashed lines on each laser in [reference] represent Figure 1F the cross-section shown in [reference], where the laser material has been removed by etching at an angle to form an angled surface that is not visible from the plan view. The dashed lines are used to show the bottom edge of the angled portion, where the angled portion of each laser abuts the first semiconductor layer 101. Figure 3 Each of the lasers L1, L2, L3, L4 shown in [reference] can be optically isolated from each other and can be evenly spaced around a central spacing 150. As Figure 3 shown, the lasers can be spaced apart at the center and at their outer edges. However, it should be understood that the shape of the spacing between the lasers shown in the corners of the square first semiconductor layer is purely exemplary and can be of any size or shape desired, as long as the lasers are optically isolated from each other. It should be understood that Figure 1F the grating and the second semiconductor layer are omitted from Figure 3 [reference] such that the positions of the lasers can be seen in the Figure 1F plan view of [reference]. It should also be understood that Figure 1G and Figure 1H the metal layers 130, 131 and the reflective coatings 140, 141 in [reference] can be applied in the same manner as shown in Figure 1G and Figure 1H [reference] to the Figure 3 configuration of [reference] such that light is emitted as Figure 3 shown in [reference].

[0049] In an alternative embodiment, step S207, i.e., the formation of the spacings, can be omitted from the manufacturing process, such that no spacings 150 are formed between two or more lasers. The semiconductor device 400 of this embodiment is shown in Figure 4A and Figure 4B [reference], which represents Figure 1Cconfigured as shown and formed using fabrication steps S201, S202, S203, and S204. In this configuration, two or more lasers L1, L2 are used to emit light along the longitudinal direction of the first semiconductor layer 201, as Figure 4A and Figure 4B shown by the solid and dashed lines in. However, in this embodiment, there may be an additional step of forming a reflective coating. The reflective coating may be formed between two or more lasers 410, 411 at the butt-coupling interface 470 (the boundary between two lasers), or may be formed at one end of one of the lasers L1, L2, which is the first end 480 in Figure 4A . The first end 480 of FIG. 4 is defined such that one of the lasers in L2 is located between the reflective coating R2 and the laser L1. The interface 470 between the two lasers can be considered as the contact surface between the two lasers. In this configuration, the spacer 450 is not necessary because two or more lasers will be used to emit light along the longitudinal direction of the first semiconductor layer 401, as Figure 4A and Figure 4B shown by the arrows in. Since in this configuration, the light emitted from each laser may intersect with the light emitted from other lasers, each laser can only be used individually, and two or more lasers can only be used together without interfering with each other. Figure 4A and Figure 4B The solid arrows in show the optical path when the reflective coating R1 is applied at the interface 470 and the light is emitted by the laser L1, while L2 is not used to emit light. As can be seen, the light will be reflected from the reflective coating R1 and guided out of the device at the end opposite to the end 480. Figure 4A and Figure 4B The dashed arrows in show how the light emitted from the laser L2 will leave the device in the case where the reflective coating R2 is applied to the end 480 and no reflective coating is provided at the interface 470, for example, no reflective coating R1 and the laser L1 is inactive. Figure 4B shows other components of the semiconductor device 400, which are similar to the components in Figure 1H , but are located at different positions due to different emission positions of the light beams from the lasers L1 or L2. Since the light beam is configured to be emitted from the end of the device, an anti-reflective coating 440 can be applied to the end of the device, and a high-reflective coating 441 can be applied to Figure 4BOutside the first semiconductor layer 401 and the second semiconductor layer 402 shown in the figure. The first metal layer 430 and the second metal layer 431 can also be applied outside the first semiconductor layer 401 and the second semiconductor layer 402, such that the high-reflection coating 441 is located between the metal layers 430, 431 and the first semiconductor layer 401 and the second semiconductor layer 402. Since there is no deflection of the beam emitted from the laser, the beam emitted from the laser can be made to exit the device in a direction perpendicular to the longitudinal direction of the first semiconductor layer 401 through the antireflection coating 440 located at the end of the device 400.

[0050] Combined Figure 5 describes another embodiment. Figure 5 The configuration of is created via the same manufacturing steps S201 to S207 as the configuration shown in, however, the spacing created by the facet etching process is uniform along its length. In this case, a uniform channel is created between two or more lasers. For simplicity, Figure 1F the diffraction grating, the second semiconductor layer, the metal layer, and the reflective coating of have been omitted from, but it should be understood that these can be applied to the device shown in if the user desires and in the same manner. In Figures 1F to 1H the embodiment of, the spacing between the lasers 510, 511 is uniform, and thus, the manufacturing method can include a further step of providing a reflector 580 on the first semiconductor layer 501. The reflector 580 on the first semiconductor layer 501 within at least one spacing 550 can include two or more surfaces that are at a 45-degree angle to the first semiconductor layer 501 to change the optical path to be perpendicular to the longitudinal direction of the first semiconductor layer 501 and towards the second semiconductor layer (not shown). The path of the light emitted from each laser can be regarded as Figure 5 the solid arrows in. This can be achieved by providing a triangular reflector in the spacing, which has a uniform width as shown in Figure 5 The surface of the reflector 580 then deflects the light emitted from each laser to a direction perpendicular to the longitudinal direction of the plane of the first semiconductor layer, for example, perpendicular to the longitudinal direction 10 shown in Figure 5 The reflector can take any suitable shape that can correctly deflect the light emitted from the laser. For example, the reflector 580 can be a single-sided angle mirror that can deflect the light from only one laser and can be configured to rotate to face the laser emitting the light. Optionally, if Figure 5 the device of is modified to have a uniform spacing instead of as described above with respect to Figure 5 shown in Figure 1C shown in Figure 3 the device of is modified to have a uniform spacing instead of as described above with respect to Figure 3For the described angled facets, in order to face all lasers simultaneously, the reflector can be in the shape of a pyramid with four surfaces, each surface facing one of the four lasers L1, L2, L3, and L4. Thus, Figure 5 The semiconductor device 500 of Figure 5 provides a configuration in which the etching performed can be simplified to provide uniform spacing, thus saving manufacturing costs.

[0051] In addition, the lasers L1, L2, L3, L4 of the present invention can be directly modulated lasers (DMLs) or electro-absorption modulated lasers (EMLs), and / or EMLs with semiconductor optical amplifiers (SOAs). Using the above manufacturing techniques to produce the above semiconductor device of the present invention makes the beams from each laser very close, for example, on the order of a few micrometers, preferably 20 micrometers apart. Compared with known systems, this provides the ability to produce compact devices, reducing size and cost.

[0052] The applicant hereby separately discloses each individual feature described herein and any combination of two or more such features. With the ordinary knowledge of those skilled in the art, such features or combinations can be implemented as a whole based on this specification, regardless of whether such features or combinations of features can solve any of the problems disclosed herein, and without limiting the scope of the claims. This application shows that the aspects of the present invention can be constituted by any such individual feature or combination of features. In view of the above description, various modifications within the scope of the present invention will be obvious to those skilled in the art.

Claims

1. A semiconductor device, characterized in that, The device includes: A first semiconductor layer; Two or more lasers for emitting at different frequencies and disposed on the first semiconductor layer; Wherein, the two or more lasers are optically isolated from each other.

2. The semiconductor device according to claim 1, wherein, The device further includes: A second semiconductor layer; Wherein, the two or more lasers are located between the first semiconductor layer and the second semiconductor layer.

3. The semiconductor device according to claim 2, wherein, The device further includes: One or more diffraction gratings located between the two or more lasers and the second semiconductor.

4. The semiconductor device according to claim 3, characterized in that, Each of the one or more diffraction gratings is associated with a different one of the two or more lasers.

5. The semiconductor device according to any one of the above claims, characterized in that, The two or more lasers are separated by at least one gap on the first semiconductor layer.

6. The semiconductor device according to any one of the above claims, characterized in that, At least a part of the at least one gap forms a 45-degree angle with at least a part of the first semiconductor layer to change the optical path to be perpendicular to the longitudinal direction of the first semiconductor layer and towards the second semiconductor layer.

7. The semiconductor device according to any one of claims 1 to 5, characterized in that, The device further includes: A reflector located within the at least one gap on the first surface of the first semiconductor layer, the reflector including two or more surfaces that form a 45-degree angle with the first semiconductor layer to change the optical path to be perpendicular to the longitudinal direction of the first semiconductor layer and towards the second semiconductor layer; Wherein, the width of the at least one gap is uniform.

8. The semiconductor device according to any one of claims 1 to 4, characterized in that, The device further includes: A reflective coating applied at the boundary between the two or more lasers.

9. The semiconductor device according to any one of the above claims, characterized in that, The device further includes a lens for focusing light emitted from one or more of the two or more lasers.

10. The semiconductor device according to any one of claims 2 to 9, characterized in that, The first semiconductor layer is an n-doped layer and / or the second semiconductor layer is a p-doped layer.

11. The semiconductor device according to any one of claims 2 to 10, characterized in that, The device further includes: A first metal layer formed on the first semiconductor layer such that the first semiconductor layer is located between the first metal layer and the two or more lasers; A second metal layer formed on a part of the second semiconductor layer such that the second semiconductor layer is located between the second metal layer and the two or more lasers.

12. The semiconductor device according to claim 11, wherein The device further includes: At least one first coating formed on at least a part of each side surface of the device, the side surface of the device being a surface perpendicular to the first semiconductor layer and towards the second semiconductor layer; At least one second coating formed on the second semiconductor layer such that the second semiconductor layer is located between the second coating and the two or more lasers; Wherein, the first coating is more reflective than the second coating.

13. A method of manufacturing a semiconductor device, characterized in that, The method includes: Providing a first semiconductor layer; Forming a first laser on the first semiconductor layer, the first laser for emitting at a first frequency; Removing a part of the first laser formed on the first semiconductor layer; Using a butt-joint coupling growth technique to form a second laser on the first semiconductor layer, the second laser for emitting at a second frequency; Wherein, the first laser and the second laser are optically isolated from each other.

14. The method of manufacturing a semiconductor device according to claim 13, wherein, The method further includes the following steps: Provide a second semiconductor layer, the position of the second semiconductor layer can be such that the first laser and the second laser are located between the first semiconductor layer and the second semiconductor layer.

15. The method for manufacturing a semiconductor device according to claim 14, wherein, The method further comprises the steps of: Provide one or more diffraction gratings, the one or more diffraction gratings being located between the second semiconductor layer and the two or more lasers.

16. The method of manufacturing a semiconductor device according to any one of claims 13 to 15, characterized in that, It further comprises the steps of: Remove a part of the first laser and / or the second laser such that the first laser and the second laser are separated by at least one gap.

17. The method of manufacturing a semiconductor device according to claim 16, wherein, The part removed from the first laser and / or the second laser is the part at the butt-coupling interface between the first laser and the second laser.

18. The method of manufacturing a semiconductor device according to claim 16 or 17, characterized in that, When removing a part of the first laser and / or the second laser, at least a part of the at least one gap is at an angle of 45 degrees with at least a part of the first semiconductor layer to change the optical path to be perpendicular to the longitudinal direction of the first semiconductor layer and towards the second semiconductor layer.

19. The method for manufacturing a semiconductor device according to claim 16 or 17, characterized in that, The method further comprises: Provide a reflector, the reflector being located within the at least one gap on the first semiconductor layer, the reflector comprising two or more surfaces that are at an angle of 45 degrees with the first semiconductor layer to change the optical path to be perpendicular to the longitudinal direction of the first semiconductor layer and towards the second semiconductor layer; Wherein, when removing a part of the first laser and / or the second laser, the width of the at least one gap is uniform.

20. The method of manufacturing a semiconductor device according to any one of claims 13 to 15, characterized in that, The method further comprises the steps of: Apply a reflective coating at the boundary between the two or more lasers.

21. The method of manufacturing a semiconductor device according to any one of claims 16 to 20, characterized in that, The removal of a part of the first laser is performed by facet etching.

22. The method of manufacturing a semiconductor device according to any one of claims 14 to 21, characterized in that, It further comprises the steps of: Apply a first metal layer to the first semiconductor layer such that the first semiconductor layer is located between the first metal layer and the first laser and / or the second laser; Apply a second metal layer to a part of the second semiconductor layer such that the second semiconductor layer is located between the second metal layer and the first laser and / or the second laser.

23. The method of manufacturing a semiconductor device according to claim 22, wherein, It further comprises the steps of: Apply at least one first coating to at least a part of each side surface of the device, the side surface of the device being the surface perpendicular to the first semiconductor layer and towards the second semiconductor layer; Apply at least one second coating to the second semiconductor layer such that the second semiconductor layer is located between the at least one second coating and the first laser and / or the second laser; Wherein, the first coating is more reflective than the second coating.

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