Carbon fiber loaded metal oxide memristor and preparation method thereof

Abstract

The invention belongs to the technical field of memristors, and particularly discloses a carbon fiber loaded metal oxide memristor and a preparation method thereof, and the method comprises the following steps: firstly, carrying out the soaking treatment and water washing of carbon fibers; secondly, sensitization treatment and activation treatment are carried out; carrying out chemical plating reaction again, reducing metal ions into metal atoms through a reducing agent, and depositing a uniform nanoscale metal active film (such as Cu, Co, Ni and Fe) on the surface of the light high-strength high-curvature carbon fiber to obtain the carbon fiber plated with a metal coating; and finally, carrying out heat treatment, oxidizing and introducing vacancies to obtain carbon fibers plated with metal oxide films, and carrying out lap joint to obtain the carbon fiber loaded metal oxide memristor. According to the carbon fiber loaded metal oxide memristor and the preparation method thereof, the fiber electrode can be woven with any conductive fiber electrode to obtain the memristor, the memristor shows excellent memristive performance, the process is simple, and the requirements of large-scale preparation and practical application can be effectively met.

Description

Technical Field

[0001] The present invention relates to the technical field of memristors, and in particular to a carbon fiber-loaded metal oxide memristor and a preparation method thereof. Background Art

[0002] Flexible memristors, due to their multi-level storage capabilities, high speed, low power consumption, and important applications in neuromorphic computing, have become a key component in the field of wearable electronic devices. Furthermore, the simple two-terminal structure of memristors allows them to be fabricated into woven wearable devices. Electronic fabrics with memristive properties can be constructed by coating a resistive switching functional layer on a fibrous substrate or electrode material and then weaving them together. Compared to planar thin-film memristors, woven memristors offer improved tensile strength, breathability, flexibility, and overall comfort.

[0003] The fiber electrodes used in research on woven flexible memristors have certain limitations in practical applications. For example, metal wires lack flexibility, making them difficult to weave. Organic fibers are generally insulators and lack high-temperature resistance, making them impractical for direct use as electrode materials. They typically require a conductive metal coating. Carbon fiber, however, is widely used in composite materials. It not only offers advantages such as high strength, high modulus, high-temperature resistance, corrosion resistance, and good weavability, but also excellent conductivity. Its mature technology makes it economical to use. Therefore, flexible memristors fabricated using carbon fiber as a base electrode material would exhibit enhanced flexibility, bendability, breathability, and high-temperature resistance, and would be compatible with existing wearable fabrics.

[0004] Currently, practical wearable fiber memristors require further effort to improve their durability under harsh operating conditions and achieve high reproducibility across different devices to support large-scale array applications. Metal oxide memristors, among others, have attracted widespread attention due to their high on / off ratio, excellent cycle stability, and fast reversal speed. Memristors based on oxides and other materials can mimic the functions of nociceptors in vivo, such as pain perception, desensitization, allodynia, and hyperalgesia, laying a solid foundation for the development of neuromorphic computing. Compared to other materials, metal oxide memristors are less sensitive to deposition conditions and allow for precise control of thin film properties. Carbon fiber electrodes with high curvature surfaces face difficulties in obtaining high-quality memristive functional layers using traditional memristor fabrication methods such as physical vapor deposition, chemical vapor deposition, or spin coating. However, research on memristive functional fibers and their preparation methods is relatively scarce. Therefore, methods for loading memristive functional layers onto fiber electrodes are urgently needed to achieve high-performance textile memristive devices and provide new insights for the development of novel flexible information processing devices.

[0005] Based on the above content, a carbon fiber loaded metal oxide memristor and a preparation method thereof are proposed. Summary of the Invention

[0006] The purpose of the present invention is to provide a carbon fiber-loaded metal oxide memristor and a preparation method thereof. The fiber electrode can be cross-woven with any conductive fiber electrode to obtain a soft and breathable textile memristor. The memristor unit at each intersection exhibits excellent memristive performance. The process is simple, controllable, and low-cost, which can effectively meet the needs of large-scale preparation and practical application.

[0007] To achieve the above object, the present invention provides a method for preparing a carbon fiber-loaded metal oxide memristor, comprising the following steps:

[0008] S1, soaking the carbon fiber in a sodium hydroxide solution and washing with water;

[0009] S2, placing the carbon fiber obtained in S1 into a stannous chloride solution for sensitization treatment;

[0010] S3, placing the carbon fiber obtained in S2 into a palladium chloride solution for activation treatment;

[0011] S4, dissolving the main salt, chelating agent, buffer and reducing agent in deionized water in proportion, adding the carbon fiber obtained in S3, then adding sodium hydroxide solution to adjust the pH, performing chemical plating reaction, washing and drying to obtain carbon fiber plated with a metal coating;

[0012] S5, heat-treating the metal-coated carbon fiber obtained in S4 in an air environment to obtain a carbon fiber coated with a metal oxide film;

[0013] S6. Overlapping the carbon fiber or the metal-coated carbon fiber obtained in S4 with the carbon fiber coated with the metal oxide film obtained in S5 to obtain a carbon fiber-loaded metal oxide memristor.

[0014] Preferably, in S1, the concentration of the sodium hydroxide solution is 0.1 to 1 mol / L, the temperature of the solution for the immersion treatment is 40 to 80° C., and the immersion time is 10 to 60 min.

[0015] Preferably, in S2, the concentration of the stannous chloride solution is 10 to 60 mmol / L, and the sensitization treatment time is 10 to 30 minutes.

[0016] Preferably, in S3, the concentration of the palladium chloride solution is 0.1 to 0.5 mmol / L, and the activation treatment time is 10 to 30 minutes.

[0017] Preferably, in S4, the concentrations of the main salt, the chelating agent, the buffer and the reducing agent are 50-250 mmol / L, 50-270 mmol / L, 40-150 mmol / L and 0.1-0.5 mol / L, respectively;

[0018] The main salt is one of sulfate or chloride, the sulfate is specifically one or more of copper sulfate, nickel sulfate, cobalt sulfate, and ferrous ammonium sulfate, and the chloride is specifically one or more of copper chloride, nickel chloride, cobalt chloride, and ferrous chloride;

[0019] The chelating agent is one of a polyaminocarboxylic acid ligand or a hydrogen carboxylic acid ligand, the polyaminocarboxylic acid ligand is specifically one or both of disodium ethylenediaminetetraacetic acid and triacetic acid, and the hydrogen carboxylic acid ligand is specifically one or both of tartaric acid and trisodium citrate;

[0020] The buffer is one of organic acid salts, amino acids, and ammonium salts. The organic acid salt is specifically one or more of sodium acetate, sodium citrate, sodium propionate, and sodium lactate. The amino acid is specifically glycine. The ammonium salt is specifically one or two of ammonium sulfate and ammonia water.

[0021] The reducing agent is one of hypophosphite, borohydride, hydrazine type, and organic reducing agent. The hypophosphite is specifically sodium hypophosphite. The borohydride is specifically one or both of sodium borohydride and potassium borohydride. The hydrazine type is specifically one or both of hydrazine and hydrazine hydrate. The organic reducing agent is specifically one or both of formaldehyde and glyoxylic acid.

[0022] Preferably, in S4, the reaction time of the chemical plating reaction is 5 to 30 minutes.

[0023] Preferably, in S4, the step of adding sodium hydroxide solution to adjust the pH is as follows:

[0024] Adjust the pH of the solution to 4-6 for nickel plating;

[0025] Alternatively, adjust the solution pH to a value greater than 8 for cobalt plating;

[0026] Alternatively, adjust the solution pH to a value greater than 12 for copper and iron plating.

[0027] Preferably, in S4, the washing and drying are specifically:

[0028] The resulting product was washed with deionized water for 3 to 4 times, then washed with anhydrous ethanol for 3 to 4 times, and then dried at 30 to 60° C. for 3 to 24 hours.

[0029] Preferably, in S5, the heat treatment temperature is 100-400° C., and the time is 0.5-3 h.

[0030] The present invention also provides a carbon fiber loaded metal oxide memristor, comprising a top electrode and a bottom electrode formed by cross-lapping, wherein the top electrode is an active carbon fiber coated with a metal coating or an inert carbon fiber, and the bottom electrode is a carbon fiber coated with a metal oxide film, and the fiber electrode diameters of the top electrode and the bottom electrode are both 7 to 10 microns.

[0031] Therefore, the present invention adopts the above-mentioned carbon fiber-loaded metal oxide memristor and its preparation method, and the beneficial effects are as follows:

[0032] (1) In the carbon fiber loaded metal oxide memristor prepared by the present invention, different metal oxide memristors can all show excellent memristive performance, such as CuO@C f 、CoO@C f 、NiO@C f 、Fe3O4@C f ), such as stable set voltage (~1V, low average set voltage, narrow distribution range), high on-off ratio (>10 3 ), good cycling stability, and excellent data retention. Furthermore, the introduction of a large number of oxygen vacancies significantly improves the chemical properties of the oxidized nanomaterials, facilitating the formation of conductive filaments. Furthermore, metal oxide memristors exhibit bipolar nonvolatile switching properties, enabling them to mimic basic neurobiological synaptic functions.

[0033] (2) The present invention uses chemical plating to reduce metal ions into metal atoms through a reducing agent, and deposits a uniform nanoscale metal active film (such as Cu, Co, Ni, Fe) on the surface of a lightweight, high-strength, high-curvature carbon fiber. The fiber electrode can be cross-woven with any conductive fiber electrode to obtain a soft and breathable textile memristor. The preparation method is simple and has good performance reproducibility between devices. The prepared metal oxide is very stable and inexpensive, which can effectively meet the needs of large-scale preparation and practical application.

[0034] The technical solution of the present invention is further described in detail below through the accompanying drawings and embodiments. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] Figure 1 A schematic diagram of the structure and functional interface of a carbon fiber-loaded metal oxide memristor according to the present invention;

[0036] Figure 2 The CuO@C of Example 1 of the present invention f SEM surface image of fiber electrode;

[0037] Figure 3 The CoO@C of Example 2 of the present invention f SEM surface image of fiber electrode;

[0038] Figure 4 NiO@C of Example 4 of the present invention f SEM surface image of fiber electrode;

[0039] Figure 5 The CuO@C of Example 1 of the present invention f XRD pattern of fiber electrode;

[0040] Figure 6 The CuO@C of Example 1 of the present invention f XPS full spectrum of fiber electrode;

[0041] Figure 7 The CoO@C of Example 2 of the present invention f XPS full spectrum of fiber electrode;

[0042] Figure 8 NiO@C of Example 4 of the present invention f XPS full spectrum of fiber electrode;

[0043] Figure 9 This is the IV cycle curve of the memristor obtained in Example 1 of the present invention;

[0044] Figure 10 This is the IV cycle curve of the memristor obtained in Example 2 of the present invention;

[0045] Figure 11 The high and low resistance state retention time of the memristor obtained in Example 2 of the present invention;

[0046] Figure 12 This is the IV cycle curve of the memristor obtained in Example 3 of the present invention;

[0047] Figure 13 This is the IV cycle curve of the memristor obtained in Example 4 of the present invention. DETAILED DESCRIPTION

[0048] The technical solution of the present invention is further described below with reference to the accompanying drawings and embodiments.

[0049] Unless otherwise defined, technical or scientific terms used in the present invention shall have the same meaning as commonly understood by one of ordinary skill in the art to which the present invention belongs.

[0050] The structural diagram and functional interface diagram of the carbon fiber loaded metal oxide memristor obtained in the embodiment are as follows: Figure 1The carbon fiber-loaded metal oxide memristor includes a top electrode and a bottom electrode formed by cross-stacked connections. The top electrode is an active carbon fiber coated with a metal coating or an inert carbon fiber, and the bottom electrode is a carbon fiber coated with a metal oxide film. The diameter of the fiber electrodes of the top and bottom electrodes is 7 to 10 microns.

[0051] Example 1

[0052] A CuO@C f The preparation method of carbon fiber loaded metal oxide memristor is as follows:

[0053] 1) Dissolve 10 g of sodium hydroxide in 100 ml of deionized water to obtain Solution A. Dissolve 0.5 g of stannous chloride in 50 ml of deionized water to obtain Solution B. Dissolve 0.005 g of palladium chloride in 100 ml of deionized water to obtain Solution C. Dissolve 1.5 g of copper sulfate, 2 g of EDTA, 1 g of potassium sodium tartrate, and 10 ml of glyoxylic acid in 100 ml of deionized water and mix thoroughly to obtain Solution D.

[0054] 2) A section of carbon fiber was placed in solution A and treated at 50° C. for 30 min, and then the obtained carbon fiber was washed three times with deionized water.

[0055] 3) The carbon fiber treated in step 2) was placed in solution B and sensitized for 30 minutes.

[0056] 4) The carbon fibers treated in step 3) were placed in solution C and activated for 30 min.

[0057] 5) Place the carbon fiber treated in step 4) into solution D, add solution A to adjust the pH value to greater than 12, wait for the chemical plating reaction for 30 minutes, wash and dry the obtained carbon fiber to obtain Cu@C f .

[0058] 6) Cu@C obtained in step 5) f After heat treatment at 200℃ for 1h in air environment, CuO@C f Fiber electrodes.

[0059] CuO@C f The surface SEM of the fiber electrode is shown in Figure 2. Figure 2 As shown, the XRD pattern is Figure 5 As shown in the XPS diagram Figure 6 shown.

[0060] Depend on Figure 2 It can be seen that the surface of carbon fibers is successfully loaded with metal oxide nanoparticles.

[0061] Depend on Figure 5 It can be seen that the prepared CuO contains a small amount of incompletely oxidized Cu2O and does not contain other compound impurities.

[0062] Depend on Figure 6 It can be seen that Cu and O elements are successfully deposited on carbon fibers. It is worth noting that the content of vacant oxygen is very high, which is conducive to the formation of conductive filaments.

[0063] 7) Cu@C obtained in step 5) f and CuO@C obtained in step 6) f The fiber electrodes are cross-stacked to finally obtain a carbon fiber-loaded metal oxide memristor.

[0064] Test its resistance switching performance, the results are as follows Figure 9 As shown, the window is larger and the on / off ratio is close to 10 3 , and the memristor is bipolar, which can meet practical needs.

[0065] Example 2

[0066] A CoO@C f The preparation method of carbon fiber loaded metal oxide memristor is as follows:

[0067] 1) Weigh 10 g of sodium hydroxide and dissolve it in 100 ml of deionized water to obtain solution A. Weigh 0.5 g of stannous chloride and dissolve it in 50 ml of deionized water to obtain solution B. Weigh 0.005 g of palladium chloride and dissolve it in 100 ml of deionized water to obtain solution C. Dissolve 1.5 g of cobalt sulfate, 2 g of EDTA, 1.5 g of potassium sodium tartrate, and 3 g of sodium hypophosphite in 100 ml of deionized water and mix thoroughly to obtain solution D.

[0068] 2) A section of carbon fiber was placed in solution A and treated at 60° C. for 30 min, and then the obtained carbon fiber was washed three times with deionized water.

[0069] 3) The carbon fiber treated in step 2) was placed in solution B and sensitized for 30 minutes.

[0070] 4) The carbon fibers treated in step 3) were placed in solution C and activated for 30 min.

[0071] 5) Place the carbon fiber treated in step 4) into solution D, add solution A to adjust the pH value to greater than 8, wait for the chemical plating reaction for 10 minutes, wash and dry the obtained carbon fiber to obtain Co@C f .

[0072] 6) The Co@C obtained in step 5) f After heat treatment at 300℃ for 1h in air environment, CoO@C f Fiber electrodes.

[0073] CoO@C f The surface SEM of the fiber electrode is shown in Figure 2. Figure 3 As shown in the XPS diagram Figure 7 shown.

[0074] Depend on Figure 3 It can be seen that the surface of carbon fibers is successfully loaded with metal oxide nanoparticles.

[0075] Depend on Figure 7 It can be seen that Co and O elements are successfully deposited on carbon fibers. It is worth noting that the content of vacant oxygen is very high, which is conducive to the formation of conductive filaments.

[0076] 7) Cu@C f Fiber electrode and CoO@C obtained in step 6) f The fiber electrodes are cross-stacked to finally obtain a carbon fiber-loaded metal oxide memristor.

[0077] Test its resistance switching performance, the results are as follows Figure 10 As shown, the window is larger and the on / off ratio is greater than 10 3 , and the memristor is bipolar. Reading the memristor resistance at 0.1V, the result is as follows Figure 11 As shown, the high and low resistance holding time is more than 10 3 s, which can meet actual needs.

[0078] Example 3

[0079] A CoO@C f The preparation method of carbon fiber loaded metal oxide memristor is as follows:

[0080] 1) Dissolve 10 g of sodium hydroxide in 100 ml of deionized water to obtain Solution A. Dissolve 1 g of stannous chloride in 50 ml of deionized water to obtain Solution B. Dissolve 0.005 g of palladium chloride in 100 ml of deionized water to obtain Solution C. Dissolve 1 g of cobalt sulfate, 2 g of EDTA, 1.2 g of potassium sodium tartrate, and 2 g of sodium hypophosphite in 100 ml of deionized water and mix thoroughly to obtain Solution D.

[0081] 2) A section of carbon fiber was placed in solution A and treated at 70° C. for 30 min, and then the obtained carbon fiber was washed three times with deionized water.

[0082] 3) The carbon fiber treated in step 2) was placed in solution B and sensitized for 30 minutes.

[0083] 4) The carbon fibers treated in step 3) were placed in solution C and activated for 30 min.

[0084] 5) Place the carbon fiber treated in step 4) into solution D, add solution A to adjust the pH value to greater than 10, wait for the chemical plating reaction for 20 minutes, wash and dry the obtained carbon fiber to obtain Co@C f .

[0085] 6) The Co@C obtained in step 5) f After heat treatment at 300℃ for 1h in air environment, CoO@C f Fiber electrodes.

[0086] 7) Carbon fiber and CoO@C obtained in step 6) f The fiber electrodes are cross-stacked to finally obtain a carbon fiber-loaded metal oxide memristor.

[0087] Test its resistance switching performance, the results are as follows Figure 12 As shown, the window is larger and the on / off ratio is close to 10 3 , and the memristor is bipolar, which can meet practical needs.

[0088] Example 4

[0089] A NiO@C f The preparation method of carbon fiber loaded metal oxide memristor is as follows:

[0090] 1) Dissolve 10 g of sodium hydroxide in 100 ml of deionized water to obtain Solution A. Dissolve 1 g of stannous chloride in 50 ml of deionized water to obtain Solution B. Dissolve 0.005 g of palladium chloride in 100 ml of deionized water to obtain Solution C. Dissolve 3 g of nickel sulfate, 2 g of EDTA, 1.6 g of potassium sodium tartrate, and 3.5 g of sodium hypophosphite in 100 ml of deionized water and mix thoroughly to obtain Solution D.

[0091] 2) A section of carbon fiber was placed in solution A and treated at 60° C. for 30 min, and then the obtained carbon fiber was washed three times with deionized water.

[0092] 3) The carbon fiber treated in step 2) was placed in solution B and sensitized for 30 minutes.

[0093] 4) The carbon fibers treated in step 3) were placed in solution C and activated for 30 min.

[0094] 5) Place the carbon fiber treated in step 4) into solution D, add solution A to adjust the pH value to 5, wait for the chemical plating reaction for 10 minutes, wash and dry the obtained carbon fiber to obtain Ni@C f .

[0095] 6) Ni@C obtained in step 5) f NiO@C was obtained by heat treatment at 200℃ for 1h in air environment. f Fiber electrodes.

[0096] NiO@C f The surface SEM of the fiber electrode is shown in Figure 2. Figure 4 As shown, the XPS diagram is as follows Figure 8 shown.

[0097] Depend on Figure 4 It can be seen that the surface of carbon fibers is successfully loaded with metal oxide nanoparticles.

[0098] Depend on Figure 8 It can be seen that Ni and O elements are successfully deposited on carbon fibers. It is worth noting that the content of vacant oxygen is very high, which is conducive to the formation of conductive filaments.

[0099] 7) Carbon fiber and NiO@C obtained in step 6) f The fiber electrodes are cross-stacked to finally obtain a carbon fiber-loaded metal oxide memristor.

[0100] Test its resistance switching performance, the results are as follows Figure 13 As shown, the window is larger and the on / off ratio is greater than 10 3 , and the memristor is bipolar, which can meet practical needs.

[0101] In summary, the carbon fiber-loaded metal oxide memristors finally obtained in Examples 1 to 4 exhibit bipolarity and can meet actual needs.

[0102] Therefore, the present invention adopts the above-mentioned carbon fiber-loaded metal oxide memristor and its preparation method. The fiber electrode can be cross-woven with any conductive fiber electrode to obtain a soft and breathable textile memristor. The memristor unit at each intersection exhibits excellent memristive performance. The process is simple, controllable, and low-cost, which can effectively meet the needs of large-scale preparation and practical application.

[0103] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention rather than to limit the same. Although the present invention has been described in detail with reference to the preferred embodiments, those skilled in the art should understand that they can still modify or replace the technical solutions of the present invention with equivalents, and these modifications or equivalent replacements cannot cause the modified technical solutions to deviate from the spirit and scope of the technical solutions of the present invention.

Claims

1. A method for preparing a carbon fiber loaded metal oxide memristor, characterized in that: The following steps are involved: S1, soaking the carbon fiber in a sodium hydroxide solution and washing with water; S2, placing the carbon fiber obtained in S1 into a stannous chloride solution for sensitization treatment; S3, placing the carbon fiber obtained in S2 into a palladium chloride solution for activation treatment; S4, dissolving the main salt, chelating agent, buffer and reducing agent in deionized water in proportion, adding the carbon fiber obtained in S3, then adding sodium hydroxide solution to adjust the pH, performing chemical plating reaction, washing and drying to obtain carbon fiber plated with a metal coating; S5, heat-treating the metal-coated carbon fiber obtained in S4 in an air environment to obtain a carbon fiber coated with a metal oxide film; S6. Overlapping the carbon fiber or the metal-coated carbon fiber obtained in S4 with the carbon fiber coated with the metal oxide film obtained in S5 to obtain a carbon fiber-loaded metal oxide memristor.

2. The method for preparing a carbon fiber loaded metal oxide memristor according to claim 1, characterized in that: In S1, the concentration of the sodium hydroxide solution is 0.1-1 mol / L, the temperature of the solution for the immersion treatment is 40-80° C., and the immersion time is 10-60 min.

3. The method for preparing a carbon fiber loaded metal oxide memristor according to claim 1, characterized in that: In S2, the concentration of the stannous chloride solution is 10 to 60 mmol / L, and the sensitization treatment time is 10 to 30 minutes.

4. The method for preparing a carbon fiber loaded metal oxide memristor according to claim 1, characterized in that: In S3, the concentration of the palladium chloride solution is 0.1 to 0.5 mmol / L, and the activation treatment time is 10 to 30 minutes.

5. The method for preparing a carbon fiber loaded metal oxide memristor according to claim 1, characterized in that: In S4, the concentrations of the main salt, the chelating agent, the buffer and the reducing agent are 50-250 mmol / L, 50-270 mmol / L, 40-150 mmol / L and 0.1-0.5 mol / L respectively; The main salt is one of sulfate or chloride, the sulfate is specifically one or more of copper sulfate, nickel sulfate, cobalt sulfate, and ferrous ammonium sulfate, and the chloride is specifically one or more of copper chloride, nickel chloride, cobalt chloride, and ferrous chloride; The chelating agent is one of a polyaminocarboxylic acid ligand or a hydrogen carboxylic acid ligand, the polyaminocarboxylic acid ligand is specifically one or both of disodium ethylenediaminetetraacetic acid and triacetic acid, and the hydrogen carboxylic acid ligand is specifically one or both of tartaric acid and trisodium citrate; The buffer is one of organic acid salts, amino acids, and ammonium salts. The organic acid salt is specifically one or more of sodium acetate, sodium citrate, sodium propionate, and sodium lactate. The amino acid is specifically glycine. The ammonium salt is specifically one or two of ammonium sulfate and ammonia water. The reducing agent is one of hypophosphite, borohydride, hydrazine type, and organic reducing agent. The hypophosphite is specifically sodium hypophosphite. The borohydride is specifically one or both of sodium borohydride and potassium borohydride. The hydrazine type is specifically one or both of hydrazine and hydrazine hydrate. The organic reducing agent is specifically one or both of formaldehyde and glyoxylic acid.

6. The method for preparing a carbon fiber loaded metal oxide memristor according to claim 1, characterized in that: In S4, the reaction time of the chemical plating reaction is 5 to 30 minutes.

7. The method for preparing a carbon fiber loaded metal oxide memristor according to claim 1, characterized in that: In S4, the step of adding sodium hydroxide solution to adjust the pH is as follows: Adjust the pH of the solution to 4-6 for nickel plating; Alternatively, adjust the solution pH to a value greater than 8 for cobalt plating; Alternatively, adjust the solution pH to a value greater than 12 for copper and iron plating.

8. The method for preparing a carbon fiber loaded metal oxide memristor according to claim 1, characterized in that: In S4, the washing and drying are specifically as follows: The resulting product was washed with deionized water for 3 to 4 times, then washed with anhydrous ethanol for 3 to 4 times, and then dried at 30 to 60° C. for 3 to 24 hours.

9. The method for preparing a carbon fiber loaded metal oxide memristor according to claim 1, characterized in that: In S5, the heat treatment temperature is 100-400° C., and the time is 0.5-3 hours.

10. A carbon fiber loaded metal oxide memristor prepared by the method for preparing a carbon fiber loaded metal oxide memristor according to any one of claims 1 to 9, characterized in that: It includes a top electrode and a bottom electrode formed by cross-stacked connection. The top electrode is active carbon fiber coated with a metal coating or inert carbon fiber, and the bottom electrode is carbon fiber coated with a metal oxide film. The fiber electrode diameters of the top electrode and the bottom electrode are both 7 to 10 microns.

Images