Mask preparation method and patterning method
The mask preparation by micro-nanoparticles and combined with template transfer technology, the cost of lithography technology and surface processing problems are solved, and a low-cost and fast patterning method is realized, which is suitable for flexible electronic preparation.
Patent Information
- Application Number
- CN202410154118.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-02-02
- Publication Date
- 2025-08-05
AI Technical Summary
The existing lithography technology is expensive and difficult to process on curved surfaces, and cannot meet the production needs of flexible electrons.
The mask is prepared by micro-nanoparticles and patterned through the template, and a mask layer that is closely bound to the substrate is formed by combining thermal sintering or chemical modification methods.
A low-cost and fast-prepared mask is realized, suitable for pattern processing on planes and curved surfaces, replacing traditional photoresist masks, and suitable for the preparation of flexible electrons.
Smart Images
Figure CN120428508A_ABST
Abstract
Description
Technical Field
[0001] The present disclosure relates to the field of semiconductor technology, and particularly to a method for preparing a mask and a patterning method. Background Art
[0002] Lithography technology is a core key technology in the semiconductor field, and its quality directly affects the backend process and device performance. Currently, the critical dimensions of semiconductor devices are getting smaller and smaller, and more precise lithography equipment is required to achieve the definition of patterns with smaller line widths. In order to obtain finer line widths, a huge cost is required to purchase more precise lithography machines. Especially for the currently available extreme ultraviolet lithography machines, the selling price of a single machine has exceeded 100 million US dollars. In addition, with the rise of the concept of flexible electronics, its manufacturing technology has also received increasing attention. Traditional lithography technology is only suitable for planar processes and does not have the ability to directly process on complex curved surfaces.
[0003] Therefore, it is necessary to develop a new technology with low cost and capable of replacing traditional lithography technology. Summary of the Invention
[0004] The purpose of the present disclosure is to provide a method for preparing a mask and a patterning method to solve the problems pointed out in the above background art or other similar problems.
[0005] According to one aspect of an embodiment of the present disclosure, a method for preparing a mask is provided, including: providing a substrate, a template, and micro-nano particles, wherein the substrate has a first surface, the template has a second surface, and a preset transfer pattern is provided on the second surface; assembling the micro-nano particles on the first surface or the second surface to form a micro-nano particle layer; stacking the template and the substrate so that the micro-nano particle layer is located between the first surface and the second surface; pressing the template and the substrate, wherein a part of the micro-nano particle layer corresponding to the preset transfer pattern binds to the substrate, and another part of the micro-nano particle layer binds to the template; separating the template from the substrate to obtain a patterned micro-nano particle array on the substrate, wherein the pattern of the micro-nano particle array is consistent with the preset transfer pattern; modifying the micro-nano particle array to obtain a mask layer tightly bound to the substrate.
[0006] In some embodiments, the preset transfer pattern is a concave pattern or a convex pattern; assembling the micro-nano particles on the first surface or the second surface to form a micro-nano particle layer includes: assembling the micro-nano particles on the one of the first surface and the second surface with a smaller binding force between the micro-nano particles.
[0007] In some embodiments, the binding force between the first surface and the micro-nano particles is the first binding force, and the binding force between the second surface and the micro-nano particles is the second binding force. The first binding force is greater than the second binding force, and the preset transfer pattern is a convex pattern. Assembling the micro-nano particles on the first surface or the second surface to form a micro-nano particle layer includes: assembling the micro-nano particles on the second surface.
[0008] In some embodiments, the binding force between the first surface and the micro-nano particles is the first binding force, and the binding force between the second surface and the micro-nano particles is the second binding force. The second binding force is greater than the first binding force, and the preset transfer pattern is a concave pattern. Assembling the micro-nano particles on the first surface or the second surface to form a micro-nano particle layer includes: assembling the micro-nano particles on the first surface.
[0009] In some embodiments, assembling the micro-nano particles on the first surface or the second surface to form a micro-nano particle layer includes: using a gas-liquid interface self-assembly process to assemble the micro-nano particles on the first surface or the second surface.
[0010] In some embodiments, assembling the micro-nano particles on the first surface or the second surface to form a micro-nano particle layer includes: arranging the micro-nano particles closely on the first surface or the second surface in a direction parallel to the first surface or the second surface to form a continuous micro-nano particle layer; and / or arranging the micro-nano particles monolayer on the first surface or the second surface in a direction perpendicular to the first surface or the second surface to form a monolayer micro-nano particle layer.
[0011] In some embodiments, the particle size of the micro-nano particles is 100 nm to 100 μm.
[0012] In some embodiments, the glass transition temperature of the micro-nano particles is less than 100 °C.
[0013] In some embodiments, pressing the template and the substrate includes: thermally pressing the template and the substrate, where the temperature of the thermal pressing is the glass transition temperature of the micro-nano particles.
[0014] In some embodiments, modifying the micro-nano particle array to obtain a mask layer tightly bound to the substrate includes: using a thermal sintering method to completely melt and re-plasticize the micro-nano particles of the micro-nano particle array to obtain a dense mask layer; or using a thermal sintering method to partially melt and re-plasticize the micro-nano particles of the micro-nano particle array to obtain a porous mask layer; or using a chemical modification method to modify the micro-nano particle array to obtain a functional mask.
[0015] In some embodiments, the line width of the micro-nano particle array is in the micron scale or the nanometer scale.
[0016] In some embodiments, the template is made of a flexible material.
[0017] In some embodiments, the first surface is planar or curved.
[0018] According to one aspect of the embodiments of the present disclosure, a patterning method is provided, which includes the mask preparation method of the first aspect embodiments.
[0019] In some embodiments, the mask layer is in direct contact with the first surface of the substrate; the patterning method further includes: performing a stripping process. Performing the stripping process includes: forming a material layer on the first surface of the substrate and the mask layer, wherein the material layer includes a first portion formed on the first surface and a second portion formed on the mask; removing the mask layer and the second portion of the material layer, and the remaining first portion of the material layer forms a patterned material layer with a target pattern.
[0020] In some embodiments, a material layer is provided on the first surface of the substrate, the mask layer is in direct contact with the material layer, and the material layer includes a first portion covered by the mask layer and a second portion not covered by the mask layer; the patterning method further includes: performing an etching process. Performing the etching process includes: removing the second portion of the material layer; removing the mask layer, and the remaining first portion of the material layer forms a patterned material layer with a target pattern.
[0021] The beneficial effects of the embodiments of the present disclosure include:
[0022] The mask preparation method of the embodiments of the present disclosure uses micro-nano particles to prepare a mask and uses a template for pattern transfer printing, without relying on complex optical paths and equipment, having the advantages of low cost, fast preparation, and low requirements for equipment, and can replace traditional photoresist masks to a certain extent.
[0023] The mask preparation method of the embodiments of the present disclosure is not only suitable for pattern processing on a plane, but also suitable for pattern processing on a curved surface, thus providing a new pattern processing method for the preparation technology of flexible electronics.
[0024] Referring to the following description and the accompanying drawings, specific embodiments of the present disclosure are disclosed in detail, indicating the ways in which the principles of the present disclosure can be adopted. It should be understood that the embodiments of the present disclosure are not limited in scope thereby. Within the spirit and terms of the appended claims, the embodiments of the present disclosure include many changes, modifications, and equivalents. Description of the Drawings
[0025] To more clearly illustrate the technical solutions in the embodiments of the present disclosure or the prior art, the following will briefly introduce the drawings required for the description of the embodiments or the prior art. Obviously, the drawings in the following description are only some embodiments recorded in the present disclosure. For those of ordinary skill in the art, without creative efforts, other drawings can be obtained based on these drawings. In the drawings:
[0026] Figure 1 is a flowchart of a mask preparation method according to a first embodiment of the present disclosure;
[0027] Figure 2 is a schematic diagram of an intermediate structure in the mask preparation method according to a first embodiment of the present disclosure;
[0028] Figure 3 and Figure 4 are schematic diagrams of different examples of intermediate structures in steps 1 to 3 of the mask preparation method according to a first embodiment of the present disclosure;
[0029] Figure 5 is a flowchart of a mask preparation method according to a second embodiment of the present disclosure;
[0030] Figure 6 is a schematic diagram of an intermediate structure in the mask preparation method according to a second embodiment of the present disclosure;
[0031] Figure 7 is a schematic diagram of an intermediate structure in the stripping process of a patterning method according to an embodiment of the present disclosure;
[0032] Figure 8 is a schematic diagram of an intermediate structure in the etching process of a patterning method according to an embodiment of the present disclosure. Detailed implementation manners
[0033] In order to enable those skilled in the art to better understand the technical solutions in the present disclosure, the following will clearly and completely describe the technical solutions in the embodiments of the present disclosure in conjunction with the drawings in the embodiments of the present disclosure. Obviously, the described embodiments are only a part of the embodiments of the present disclosure, rather than all of the embodiments. Based on the embodiments in the present disclosure, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the scope of protection of the present disclosure.
[0034] In the embodiments of the present disclosure, terms such as "first" and "second" are used to distinguish different elements in terms of appellation, but do not represent the spatial arrangement or time sequence of these elements, and these elements should not be limited by these terms. The term "and / or" includes any one and all combinations of one or more of the associated listed terms. Terms such as "comprising", "including", "having", etc. mean the existence of the stated features, elements, components or assemblies, but do not exclude the existence or addition of one or more other features, elements, components or assemblies.
[0035] In the embodiments of the present disclosure, singular forms such as "a" and "the" may include plural forms and should be broadly understood as "a kind of" or "a class of" rather than being limited to the meaning of "one"; in addition, the term "the" should be understood to include both singular and plural forms unless the context clearly indicates otherwise; in addition, the term "according to" should be understood as "at least partially according to...", and the term "based on" should be understood as "at least partially based on...", unless the context clearly indicates otherwise; in addition, the meaning of the term "plural" is two or more, unless otherwise stated.
[0036] Embodiments of the first aspect
[0037] The following describes the implementation manners of the embodiments of the present disclosure with reference to the accompanying drawings.
[0038] Embodiments of the first aspect of the present disclosure provide a mask preparation method, which includes:
[0039] Step 1: Provide a substrate, a template, and micro-nano particles. Among them, the substrate has a first surface, the template has a second surface, and a preset transfer pattern is provided on the second surface;
[0040] Step 2: Assemble the micro-nano particles on the first surface or the second surface to form a micro-nano particle layer;
[0041] Step 3: Stack the template and the substrate so that the micro-nano particle layer is located between the first surface and the second surface;
[0042] Step 4: Press the template and the substrate. Among them, a part of the micro-nano particle layer corresponding to the preset transfer pattern is combined with the substrate, and another part of the micro-nano particle layer is combined with the template;
[0043] Step 5: Separate the template from the substrate to obtain a patterned micro-nano particle array on the substrate, where the pattern of the micro-nano particle array is consistent with the preset transfer pattern;
[0044] Step 6: Modify the micro-nano particle array to obtain a mask that is tightly combined with the first surface of the substrate.
[0045] The beneficial effects of the present invention are as follows: The mask preparation method of the present disclosure embodiment uses micro-nano particles to prepare a mask and uses a template for patterned transfer printing. It does not rely on complex optical paths and equipment, has the advantages of low cost, rapid preparation, and low requirements for equipment, and can replace traditional photoresist masks to a certain extent. In addition, traditional lithography technology is only suitable for pattern processing on a plane, while the mask preparation method of the present disclosure embodiment is not only suitable for pattern processing on a plane but also suitable for pattern processing on a curved surface, thus providing a new pattern processing method for the preparation technology of flexible electronics.
[0046] In some embodiments, the binding forces between the micro-nano particles and the first surface of the substrate and the second surface of the template are different, the preset transfer pattern on the second surface of the template is convex or concave, and the other regions on the second surface of the template except the preset transfer pattern are matching patterns that are concave or convex; in step two, the micro-nano particles are assembled on the one with a smaller binding force between the first surface and the second surface and the micro-nano particles; in step four, a part of the micro-nano particle layer corresponding to the preset transfer pattern (referred to as the first part of the micro-nano particle layer) binds to the substrate, and another part of the micro-nano particle layer corresponding to the matching pattern (referred to as the second part of the micro-nano particle layer) binds to the template; in step five, when the template is separated from the substrate, the second part of the micro-nano particle layer is separated from the first part of the micro-nano particle layer together with the template, while the first part of the micro-nano particle layer remains on the substrate and becomes a micro-nano particle array with a pattern consistent with the preset transfer pattern.
[0047] Figure 1 FIG. is a flowchart of steps one to six in the mask preparation method according to the first embodiment of the present disclosure. Figure 2 FIG. is a schematic diagram of an intermediate structure in steps one to six in the mask preparation method according to the first embodiment of the present disclosure; Figure 3 and Figure 4 FIG. is a schematic diagram of different examples of the intermediate structure in steps one to three in the mask preparation method according to the first embodiment of the present disclosure.
[0048] It should be understood that the order of each step of the mask preparation method shown in the figure is only for illustrative purposes, and the shown order of these steps should not be construed as having a restrictive meaning. For example, certain steps may occur in a different order and / or may occur simultaneously with other steps other than those shown herein. In addition, not all steps may be required when implementing one or more embodiments of the present disclosure; or one or more of the shown steps may be replaced by other steps, or other steps may also be included.
[0049] Reference Figure 1 and Figure 2, in Step 1, the provided substrate 100 has a first surface 101. For example, the substrate 100 may include a substrate, which may be a semiconductor substrate such as a silicon substrate, a dielectric substrate such as a glass substrate, a circuit board such as a printed circuit board, or any other type of substrate 100. The present disclosure does not limit the type of the substrate 100.
[0050] For example, the substrate 100 may further include one or more film layers formed on the substrate, and the one or more film layers may be one or more selected from a dielectric layer, a semiconductor layer, a metal layer, and other types of material layers.
[0051] Reference Figure 1 and Figure 2 , in Step 1, the provided template 200 has a second surface 201, on which a convex preset transfer pattern 202 is provided, and the remaining area on the second surface 201 except the preset transfer pattern 202 is a concave mating pattern 203, or in other words, the other areas adjacent to the preset transfer pattern 202 on the second surface 201 are concave mating patterns 203, and the preset transfer pattern 202 and the mating pattern 203 surround each other.
[0052] It can be understood that the convex shape of the preset transfer pattern 202 and the concave shape of the mating pattern 203 are relative. That is, the preset transfer pattern 202 protrudes relative to the mating pattern 203 and is convex, and the mating pattern 203 is recessed relative to the preset transfer pattern 202 and is concave. The protruding height of the preset transfer pattern 202 is equal to the recessed depth of the mating pattern 203. The preset transfer pattern 202 may be configured to be consistent with the required mask pattern, and the line width of the preset transfer pattern 202 may be configured to be consistent with the line width of the required mask pattern.
[0053] The line width of the preset transfer pattern 202 may be an integer multiple of the particle size of the micro-nano particles, and the line width of the mating pattern 203 may be an integer multiple of the particle size of the micro-nano particles, so as to further improve the transfer accuracy. Of course, since the particle size of the micro-nano particles is in the micro-nano scale, the transfer error generated by such a small particle size is completely acceptable. Even if the line widths of the preset transfer pattern 202 and the mating pattern 203 are not integer multiples of the particle size of the micro-nano particles, the transfer error of the line width is not greater than the particle size of a single micro-nano particle, so it still has a high transfer accuracy.
[0054] For example, the template 200 may be made of a flexible material, and the flexible material may be one or more selected from polydimethylsiloxane (PDMS), polyimide (PI), and rubber.
[0055] For example, the thickness of the template 200 may be 1 mm to 100 mm, and the back surface of the template 200 opposite to the second surface 201 may be a flat surface or a curved surface.
[0056] In Figure 2 the example of, the first surface 101 of the substrate 100 is a flat surface, and the surface of the entire preset transfer pattern 202 of the template 200 is a discontinuous flat surface, and the surface of the entire mating pattern 203 of the template 200 is a discontinuous flat surface. In other words, Figure 2 the substrate 100 as a whole in can be a flat plate, and the template 200 as a whole can be a flat plate.
[0057] However, the present application is not limited thereto. The substrate 100 as a whole can be a curved plate, and the template 200 as a whole can be a curved plate to achieve pattern processing on a curved surface. The first surface 101 of the substrate 100 can be a curved surface, the surface of the entire preset transfer pattern 202 of the template 200 can be a discontinuous curved surface, and the surface of the entire mating pattern 203 of the template 200 can be a discontinuous curved surface. Of course, the locally continuous surface of the preset transfer pattern 202 can be a flat surface, and the locally continuous surface of the mating pattern 203 can be a flat surface.
[0058] For example, in Figure 3 the example of, the substrate 100 as a whole is an arc-shaped plate, and the template 200 as a whole is an arc-shaped plate; the first surface 101 of the substrate 100 is an arc-shaped surface, and the back surface of the substrate 100 opposite to the first surface 101 is an arc-shaped surface; the surface of the entire preset transfer pattern 202 of the template 200 is a discontinuous arc-shaped surface, but the locally continuous surface of the preset transfer pattern 202 is substantially a flat surface, the surface of the entire mating pattern 203 of the template 200 is a discontinuous arc-shaped surface, but the locally continuous surface of the mating pattern 203 is substantially a flat surface, and the back surface of the template 200 opposite to the second surface 201 is an arc-shaped surface.
[0059] For another example, in Figure 4 the example of, the substrate 100 as a whole is a wavy plate, and the template 200 as a whole is a wavy plate; the first surface 101 of the substrate 100 is a wavy surface, and the back surface of the substrate 100 opposite to the first surface 101 is a wavy surface; the surface of the entire preset transfer pattern 202 of the template 200 is a discontinuous wavy surface, but the locally continuous surface of the preset transfer pattern 202 is substantially a flat surface, the surface of the entire mating pattern 203 of the template 200 is a discontinuous wavy surface, but the locally continuous surface of the mating pattern 203 is substantially an arc-shaped surface, and the back surface of the template 200 opposite to the second surface 201 is a wavy surface.
[0060] Refer to Figure 1 and Figure 2, in Step 1, the binding force between the provided micro-nano particles 301 and the first surface 101 of the substrate 100 is the first binding force, and the binding force between the provided micro-nano particles 301 and the second surface 201 of the template 200 is the second binding force, and the first binding force is greater than the second binding force. In other words, the binding force between the micro-nano particles 301 and the substrate 100 is greater.
[0061] For example, the method for determining the first binding force and the second binding force can be to use a surface energy tester to measure the surface energy of the first surface 101 and the second surface 201. The surface with a larger surface energy has a greater binding force.
[0062] Reference Figure 1 and Figure 2 , in Step 1, the particle size of the provided micro-nano particles 301 is nanoscale or microscale.
[0063] For example, the particle size of the micro-nano particles 301 is 100 nm to 100 μm. Since the particle size of the micro-nano particles 301 is nanoscale or microscale, patterning with a fine line width can be achieved, which requires lower equipment requirements and lower costs compared with the prior art of using precision lithography equipment to obtain a fine line width.
[0064] For example, the material of the micro-nano particles 301 can be selected from one or more of polystyrene, silica, and polytetrafluoroethylene (PTFE). Selecting a polymer material with a lower glass transition temperature as the material of the micro-nano particles 301 helps to reduce the heating temperature in subsequent hot pressing and modification processes, further reducing costs and shortening the time. Optionally, the glass transition temperature of the provided micro-nano particles 301 in this embodiment is less than 100 °C.
[0065] For example, the shape of the micro-nano particles 301 can be spherical, ellipsoidal, etc. When the micro-nano particles 301 are non-spherical particles, the particle size of the micro-nano particles 301 mentioned in this article refers to the equivalent particle size.
[0066] Reference Figure 1 and Figure 2 , in Step 2, the micro-nano particles 301 are assembled on the second surface 201 of the template 200 to form a micro-nano particle layer 300 on the second surface 201 of the template 200. Among them, a part of the micro-nano particle layer 300 corresponding to the preset transfer pattern 202 (referred to as the first part 310 of the micro-nano particle layer 300) is combined with the substrate 100, and another part of the micro-nano particle layer 300 corresponding to the matching pattern 203 (referred to as the second part 320 of the micro-nano particle layer 300) is combined with the template 200.
[0067] In the second step, the micro-nano particles 301 are assembled on the template 200 with which they have a smaller binding force, rather than on the substrate 100 with which they have a greater binding force, because the latter would cause the second part 320 of the micro-nano particle layer 300 corresponding to the mating pattern 203 to be difficult to detach from the substrate 100, and thus cause the second part 320 to remain on the substrate 100, which is not desired in the present disclosure.
[0068] The present disclosure does not limit the method for assembling the micro-nano particles 301, as long as the micro-nano particles 301 can be assembled on the surface of the template 200.
[0069] For example, the micro-nano particles 301 can be assembled on the second surface 201 of the template 200 by using a gas-liquid interface self-assembly process. In this embodiment, the existing gas-liquid interface self-assembly process can be used to assemble the micro-nano particles 301, so the present disclosure will not elaborate on this.
[0070] Optionally, in the direction parallel to the second surface 201 of the template 200, the micro-nano particles 301 are closely arranged on the second surface 201 to form a continuous micro-nano particle layer 300. In other words, the micro-nano particles 301 are compactly arranged on the second surface 201, and any two adjacent micro-nano particles 301 are in contact rather than spaced apart, and the micro-nano particle layer 300 covers the entire preset transfer pattern 202 and the entire mating pattern 203.
[0071] Optionally, in the direction perpendicular to the second surface 201 of the template 200, the micro-nano particles 301 are arranged in a single layer on the second surface 201 to form a single-layer micro-nano particle layer 300. In other words, only one layer of micro-nano particle layer 300 is arranged on the second surface 201 of the template 200 so that all the micro-nano particles 301 can be in direct contact with the second surface 201.
[0072] Reference Figure 1 and Figure 2, in Step 3, the template 200 and the substrate 100 are stacked in such a way that the micro-nano particle layer 300 is located between the first surface 101 and the second surface 201. In the stacked state, the first part 310 of the micro-nano particle layer 300 corresponding to the convex preset transfer pattern 202 contacts both the second surface 201 of the template 200 and the first surface 101 of the substrate 100, while the second part 320 of the micro-nano particle layer 300 corresponding to the concave mating pattern 203 only contacts the second surface 201 of the template 200 and cannot contact the first surface 101 of the substrate 100. There is a gap between the second part 320 of the micro-nano particle layer 300 and the first surface 101 of the substrate 100, and this gap is approximately equal to the height by which the preset transfer pattern 202 protrudes. Since there is a certain bonding force between the micro-nano particles and the template 200, the second part 320 of the micro-nano particle layer 300 can be held on the second surface 201 of the template 200 by this bonding force without falling off from the second surface 201.
[0073] Reference Figure 1 and Figure 2 , in Step 4, the template 200 and the substrate 100 are pressed together so that the first part 310 of the micro-nano particle layer 300 fully contacts and firmly bonds to the first surface 101 of the substrate 100.
[0074] For example, the template 200 and the substrate 100 are hot-pressed. The temperature of the hot-pressing is approximately equal to the glass transition temperature of the micro-nano particles 301. Through the hot-pressing, the micro-nano particles in the first part 310 of the micro-nano particle layer 300 undergo a glass transition, thereby firmly bonding to the substrate 100. In the embodiments of the present disclosure, existing hot-pressing processes and hot-pressing equipment can be used to hot-press the template 200 and the substrate 100, so the present disclosure will not elaborate on this.
[0075] Reference Figure 1 and Figure 2, in Step Five, the template 200 is separated from the substrate 100. This can be achieved by removing the template 200 from the substrate 100 or by removing the substrate 100 from the template 200. In either case, the second part 320 of the micro-nano particle layer 300 is removed together with the template 200, that is, it is separated from the entire micro-nano particle layer 300. The first part 310 of the micro-nano particle layer 300 is retained on the substrate 100 because it has a greater binding force with the substrate 100 and will not separate from the substrate 100 along with the template 200. The first part 310 of the micro-nano particle layer 300 remaining on the first surface 101 of the substrate 100 is a patterned micro-nano particle array 330, and the pattern of this array is consistent with the preset transfer pattern 202. Thus, the preset transfer pattern 202 is transferred onto the substrate 100 in the form of the micro-nano particle array 330, with high transfer accuracy, simple process, and low equipment requirements.
[0076] Reference Figure 1 and Figure 2 , in Step Six, the micro-nano particle array 330 is modified, and the modified micro-nano particle array 330 becomes a mask layer 400 that is tightly bonded to the substrate 100.
[0077] Regarding the specific modification method, the present disclosure does not impose any restrictions as long as it can achieve the tight bonding of the micro-nano particle array 330 to the first surface 101 of the substrate 100.
[0078] In the first example, the thermal sintering method is used to melt and re-shape all the micro-nano particles 301 of the micro-nano particle array 330 to obtain a dense and pore-free mask layer 400.
[0079] In the second example, the thermal sintering method is used to melt and re-shape some of the micro-nano particles 301 of the micro-nano particle array 330 to obtain a loose and porous mask layer 400.
[0080] In the third example, the chemical modification method is used to modify the micro-nano particles 301 of the micro-nano particle array 330 to obtain a mask layer 400.
[0081] For example, an organic solvent can be used to swell the micro-nano particles 301, and the swollen micro-nano particles 301 fill the gaps between each other and connect to form a mask layer 400.
[0082] For another example, for the micro-nano particles 301 made of photosensitive materials, ultraviolet light can be used to irradiate the micro-nano particles 301 to cause crosslinking and curing, thereby forming a mask layer 400.
[0083] For another example, the substrate 100 carrying the micro-nanoparticle array 330 is placed in a polymer solution. The micro-nanoparticles 301 serve as growth sites and catalysts, causing the chemical substances in the polymer solution to crystallize and grow. The formed crystals fill the gaps between the micro-nanoparticles 301 and between the micro-nanoparticles 301 and the substrate 100, thereby forming a dense mask layer 400. The main component of the micro-nanoparticles 301 can be a polymer, such as polystyrene, PP, PVC, etc., or an inorganic substance, such as silicon dioxide. The chemical substances in the polymer solution and the main component of the micro-nanoparticles 301 can be the same. Therefore, the formed crystals can better combine with the micro-nanoparticles 301 to form a dense mask layer 400.
[0084] Figure 5 Flowchart of steps 1 to 6 in the mask preparation method according to the second embodiment of the present disclosure. Figure 6 Schematic diagram of the intermediate structure in steps 1 to 6 in the mask preparation method according to the second embodiment of the present disclosure.
[0085] The following focuses on the differences between this embodiment and the first embodiment.
[0086] refer to Figure 5 and Figure 6 In step 1, the transfer pattern 202 is concave, the matching pattern 203 is convex, and the second binding force is greater than the first binding force. In other words, the binding force between the micro-nano particles 301 and the template 200 is greater.
[0087] refer to Figure 5 and Figure 6 In step 2, the micro-nano particles 301 are assembled on the first surface 101 of the substrate 100 to form a micro-nano particle layer 300 located on the first surface 101 of the substrate 100. In step 2 of this embodiment, the micro-nano particles 301 are assembled on the substrate 100 with which they have a weaker binding force, rather than on the template 200 with which they have a stronger binding force, because the latter will make it difficult for the first portion 310 of the micro-nano particle layer 300 corresponding to the preset transfer pattern 202 to be separated from the template 200, thereby causing the first portion 310 to not remain on the substrate 100.
[0088] Optionally, refer to Figure 5 and Figure 6, in a direction parallel to the first surface 101 of the substrate 100, the micro-nano particles 301 are closely arranged on the first surface 101 to form a continuous micro-nano particle layer 300. In other words, the micro-nano particles 301 are compactly arranged on the first surface 101, and any two adjacent micro-nano particles 301 are in contact rather than spaced apart. The micro-nano particle layer 300 covers the entire area of the first surface 101 corresponding to the entire preset transfer pattern 202 and the entire mating pattern 203.
[0089] Optionally, referring to Figure 5 and Figure 6 , in a direction perpendicular to the first surface 101 of the substrate 100, the micro-nano particles 301 are arranged in a single layer on the first surface 101 to form a single-layer micro-nano particle layer 300. In other words, only one layer of micro-nano particle layer 300 is arranged on the first surface 101 of the template 200 so that all the micro-nano particles 301 can be in direct contact with the first surface 101.
[0090] Referring to Figure 5 and Figure 6 , in step three, in the state where the template 200 and the substrate 100 are stacked, the second part 320 of the micro-nano particle layer 300 corresponding to the convex mating pattern 203 contacts both the second surface 201 of the template 200 and the first surface 101 of the substrate 100, while the first part 310 of the micro-nano particle layer 300 corresponding to the concave preset transfer pattern 202 only contacts the first surface 101 of the substrate 100 and cannot contact the second surface 201 of the template 200. There is a spacing between the first part 310 of the micro-nano particle layer �00 and the second surface 201 of the template 200, and this spacing is approximately equal to the depth of the depression of the mating pattern 203.
[0091] Referring to Figure 5 and Figure 6 , in step four, the template 200 and the substrate 100 are pressed together so that the second part 320 of the micro-nano particle layer 300 is in full contact with and firmly bonded to the second surface 201 of the template 200.
[0092] Referring to Figure 5 and Figure 6 , in step five, when the template 200 is separated from the substrate 100, the second part 320 of the micro-nano particle layer 300 is removed together with the template 200 because it has a greater bonding force with the template 200, that is, it is separated from the entire micro-nano particle layer 300, while the first part 310 of the micro-nano particle layer 300 remains on the substrate 100. The first part 310 of the micro-nano particle layer 300 remaining on the first surface 101 of the substrate 100 is the patterned micro-nano particle array 330.
[0093] The above only describes the differences between this embodiment and the first embodiment. Similar or identical parts will not be repeated.
[0094] Embodiments of the second aspect
[0095] Embodiments of the second aspect of the present disclosure provide a patterning method, which includes the mask preparation method of the first aspect embodiment. Since in the embodiments of the first aspect, the mask preparation method and its beneficial effects have been described in detail, the content is incorporated herein and the description is omitted here.
[0096] In some embodiments, referring to Figure 7 , the mask layer 400 is in direct contact with the first surface 101 of the substrate 100; the patterning method further includes: performing a stripping process.
[0097] In this embodiment, the stripping process is performed after the mask layer 400 is prepared. Referring to Figure 7 , the stripping process includes:
[0098] A material layer 500 is formed on the first surface 101 of the substrate 100 and the mask layer 400. Among them, the material layer 500 includes a first part 510 formed on the first surface 101 and a second part 520 formed on the mask layer 400;
[0099] The mask layer 400 and the second part 520 of the material layer 500 are removed, and the remaining first part 510 of the material layer 500 forms a patterned material layer 600 with a target pattern.
[0100] The target pattern obtained in this embodiment is consistent with the matching pattern 203 of the template 200. Therefore, in this embodiment, according to the required target pattern, the matching pattern 203 of the template 200 can be configured, for example, the matching pattern 203 of the template 200 can be configured to be exactly the same as the required target pattern.
[0101] In other embodiments, referring to Figure 8 , a material layer 700 is provided on the first surface 101 of the substrate 100, and the mask layer 400 is in direct contact with the material layer 700, that is, the material layer 700 is located between the first surface 101 of the substrate 100 and the mask layer 400. The material layer 700 includes a first part 710 covered by the mask layer 400 and a second part 720 not covered by the mask layer 400; the patterning method further includes: performing an etching process.
[0102] In this embodiment, the etching process is performed after the mask layer 400 is prepared. Referring to Figure 6 , the etching process includes:
[0103] Removing the second part 720 of the material layer 700;
[0104] The mask layer 400 is removed, and the first part 710 of the remaining material layer 700 forms a patterned material layer 800 having a target pattern.
[0105] In this embodiment, the obtained target pattern is consistent with the preset transfer pattern 202 of the template 200. Therefore, in this embodiment, the preset transfer pattern 202 of the template 200 can be configured according to the required target pattern. For example, the preset transfer pattern 202 of the template 200 can be configured to be exactly the same as the required target pattern.
[0106] In the patterning method of the embodiment of the present disclosure, the first surface 101 of the substrate 100 can be a flat surface or a curved surface. When the first surface 101 is a curved surface, the patterning method of the embodiment of the present disclosure is a curved surface patterning method, which can implement circuit processing on a curved surface and does not rely on complex optical paths and equipment.
[0107] The above are only the embodiments of the present disclosure and are not used to limit the present disclosure. For those skilled in the art, various changes and modifications can be made to the present disclosure. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present disclosure shall be included within the scope of the claims of the present disclosure.
Claims
1. A mask preparation method, characterized in that: include: Providing a substrate, a template, and micro-nano particles, wherein the substrate has a first surface, the template has a second surface, and a preset transfer pattern is provided on the second surface; assembling the micro-nanoparticles on the first surface or the second surface to form a micro-nanoparticle layer; superimposing the template and the substrate so that the micro-nanoparticle layer is located between the first surface and the second surface; Pressing the template and the substrate, wherein a portion of the micro-nano particle layer corresponding to the preset transfer pattern is combined with the substrate, and another portion of the micro-nano particle layer is combined with the template; separating the template from the substrate to obtain a patterned micro-nanoparticle array on the substrate, wherein the pattern of the micro-nanoparticle array is consistent with the preset transfer pattern; The micro-nano particle array is modified to obtain a mask layer that is tightly combined with the substrate.
2. The mask preparation method according to claim 1, characterized in that: The preset transfer pattern is a concave pattern or a convex pattern; The step of assembling the micro-nano particles on the first surface or the second surface to form a micro-nano particle layer comprises: The micro-nanoparticles are assembled on the one of the first surface and the second surface with which the micro-nanoparticles have a smaller binding force.
3. The mask preparation method according to claim 2, characterized in that: The binding force between the first surface and the micro-nano particles is a first binding force, the binding force between the second surface and the micro-nano particles is a second binding force, the first binding force is greater than the second binding force, and the preset transfer pattern is a convex pattern; The step of assembling the micro-nano particles on the first surface or the second surface to form a micro-nano particle layer includes: assembling the micro-nano particles on the second surface.
4. The mask preparation method according to claim 2, characterized in that: The binding force between the first surface and the micro-nano particles is a first binding force, the binding force between the second surface and the micro-nano particles is a second binding force, the second binding force is greater than the first binding force, and the preset transfer pattern is a concave pattern; The step of assembling the micro-nano particles on the first surface or the second surface to form a micro-nano particle layer includes: assembling the micro-nano particles on the first surface.
5. The mask preparation method according to any one of claims 1 to 4, characterized in that: The step of assembling the micro-nano particles on the first surface or the second surface to form a micro-nano particle layer comprises: The micro-nano particles are assembled on the first surface or the second surface by using a gas-liquid interface self-assembly process.
6. The mask preparation method according to any one of claims 1 to 4, characterized in that: The step of assembling the micro-nano particles on the first surface or the second surface to form a micro-nano particle layer comprises: In a direction parallel to the first surface or the second surface, the micro-nanoparticles are densely arranged on the first surface or the second surface to form a continuous micro-nanoparticle layer; and / or, The micro-nanoparticles are arranged in a monolayer on the first surface or the second surface in a direction perpendicular to the first surface or the second surface to form a monolayer micro-nanoparticle layer.
7. The mask preparation method according to any one of claims 1 to 4, characterized in that: The particle size of the micro-nano particles is 100 nm to 100 μm.
8. The mask preparation method according to any one of claims 1 to 4, characterized in that: The glass transition temperature of the micro-nano particles is less than 100°C.
9. The mask preparation method according to any one of claims 1 to 4, characterized in that: The pressing the template and the substrate comprises: The template and the substrate are thermally pressed together, wherein the temperature of the thermal pressing is the glass transition temperature of the micro-nano particles.
10. The mask preparation method according to any one of claims 1 to 4, characterized in that: The step of modifying the micro-nano particle array to obtain a mask layer tightly bonded to the substrate comprises: A thermal sintering method is used to completely melt and reshape the micro-nanoparticles of the micro-nanoparticle array to obtain a dense mask layer; or, A thermal sintering method is used to partially melt and reshape the micro-nanoparticles of the micro-nanoparticle array to obtain a loose mask layer; or, The micro-nano particle array is modified by a chemical modification method to obtain a mask layer.
11. The mask preparation method according to any one of claims 1 to 4, characterized in that: The line width of the micro-nano particle array is in the micrometer or nanometer level.
12. The mask preparation method according to any one of claims 1 to 4, characterized in that: The template is made of flexible material.
13. The mask preparation method according to any one of claims 1 to 4, characterized in that: The first surface is a plane or a curved surface.
14. A patterning method, characterized in that: The mask preparation method includes any one of claims 1 to 13.
15. The patterning method according to claim 14, wherein: The mask layer is in direct contact with the first surface of the substrate; The patterning method further comprises: Perform a stripping process, including: forming a material layer on the first surface of the substrate and the mask layer, wherein the material layer includes a first portion formed on the first surface and a second portion formed on the mask; The mask layer and the second portion of the material layer are removed, and the remaining first portion of the material layer forms a patterned material layer having a target pattern.
16. The patterning method according to claim 14, wherein: A material layer is provided on the first surface of the substrate, the mask layer is in direct contact with the material layer, and the material layer includes a first portion covered by the mask layer and a second portion not covered by the mask layer; The patterning method further comprises: Perform an etching process, including: removing the second portion of the material layer; The mask layer is removed, and the remaining first portion of the material layer forms a patterned material layer having a target pattern.