Substrate processing apparatus

Abstract

A substrate processing capable of minimizing an influence of a filling gas of a lower space on the substrate processing includes: a substrate supporting unit; a processing unit on the substrate supporting unit; and a discharge unit connected to the reaction space between the substrate support unit and the processing unit, in which the first gas in the reaction space and the second gas in the lower space below the substrate support unit meet each other outside the reaction space.

Description

[0001] This application is a divisional application of Chinese patent application No. 202011201971.4 filed on November 2, 2020 (Applicant: ASMIP Private Holding Co., Ltd.; Invention Name: Substrate Processing Equipment). Technical Field

[0002] One or more embodiments relate to a substrate processing apparatus, and more particularly, to a substrate processing apparatus having an improved exhaust structure. Background Art

[0003] In substrate processing equipment, the reaction gases introduced into the reaction space are discharged to the outside through the exhaust space. However, some of the reaction gases are introduced into the bottom of the heating block, particularly the bottom of the reactor, on which a base, such as a substrate mounting portion, is mounted. In particular, when a non-homogeneous gas is supplied, reaction byproducts are generated in the lower space of the chamber. These reaction byproducts become contaminants in the processed substrates and reduce the yield of the device. In addition, when a highly corrosive cleaning gas is used to remove the reaction byproducts, there is a problem of damaging chamber components and thus shortening the life of the substrate processing equipment.

[0004] To prevent the reaction gas supplied to the reaction space from flowing into the bottom of the reactor, gas is supplied from the bottom of the reactor. This gas is also called a filler gas because it fills the bottom of the reactor, and is typically an inert gas such as Ar or N2. The filler gas balances the pressure between the reaction space above the substrate mounting portion and the lower space of the reactor, preventing the reaction gas from entering the lower space of the reactor. U.S. Patent Publication No. 2018-0155836 discloses a substrate processing apparatus configuration using this filler gas. Summary of the Invention

[0005] One or more embodiments include a substrate processing apparatus capable of minimizing the influence of a filling gas on substrate processing when achieving pressure balance between a reaction space and a lower space of a reactor using the filling gas.

[0006] Additional aspects will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the presented embodiments of the disclosure.

[0007] According to one or more embodiments, a substrate processing apparatus includes: a substrate supporting unit; a processing unit on the substrate supporting unit; and an exhaust unit connected to a reaction space between the substrate supporting unit and the processing unit, wherein a first gas in the reaction space is transferred to the exhaust unit through a first channel, a second gas in a lower space below the substrate supporting unit is transferred to the exhaust unit through a second channel, and the first channel and the second channel may be combined with each other below the exhaust unit.

[0008] According to another example of the substrate processing equipment, the discharge unit may further include: a partition wall that defines a side of the reaction space; an outer wall parallel to the partition wall; and a connecting wall that extends to connect the partition wall to the outer wall, wherein a joining point where the first channel and the second channel are combined with each other may be below the partition wall.

[0009] According to an example of a substrate processing apparatus, the substrate processing apparatus may further include a flow control ring arranged to surround the substrate supporting unit, wherein the first gas in the reaction space may be transferred to the exhaust unit through a first surface of the flow control ring, and the second gas in the lower space below the substrate supporting unit may be transferred to the exhaust unit through a second surface of the flow control ring.

[0010] According to another example of the substrate treating apparatus, the flow control ring may be arranged to overlap at least a portion of the discharge unit below the discharge unit.

[0011] According to another example of the substrate processing apparatus, the substrate processing apparatus may further include an outer ring disposed to surround the flow control ring, wherein the first channel may be between the discharge unit and the flow control ring, and the second channel may be between the outer ring and the flow control ring.

[0012] According to another example of the substrate processing apparatus, the substrate processing apparatus may further include a support configured to support the processing unit and the discharge unit, and the outer ring may be located between the discharge unit and the support.

[0013] According to another example of the substrate processing apparatus, the substrate supporting unit may be configured to be vertically movable, and the flow control ring may be configured to move up and down along with the vertical movement of the substrate supporting unit.

[0014] According to another example of the substrate processing apparatus, a corner portion adjacent to a junction of the outer ring may include a first bent structure.

[0015] According to another example of the substrate treating apparatus, one corner portion of the discharge unit may include a second bent structure, and the junction may be between the first bent structure and the second bent structure.

[0016] According to another example of the substrate processing apparatus, the flow control ring may include a first portion disposed to overlap at least a portion of the substrate supporting unit and a second portion extending from the first portion along a side of the substrate supporting unit.

[0017] According to another example of the substrate treating apparatus, the flow control ring may further include a third portion extending from the second portion to overlap at least a portion of the discharge unit.

[0018] According to another example of the substrate processing apparatus, the flow control ring may include a first portion disposed to overlap at least a portion of the outer ring and a second portion extending from the first portion along a side of the substrate supporting unit.

[0019] According to another example of the substrate processing apparatus, the substrate supporting unit may be configured to be vertically movable, and when the substrate supporting unit moves up and down, the flow control ring may slide against the outer ring by a pushing force of the substrate supporting unit.

[0020] According to another example of the substrate processing apparatus, the first portion of the flow control ring may include an uneven structure, and the second channel may be formed between the first portion of the flow control ring and the outer ring through the uneven structure.

[0021] According to another example of the substrate treating apparatus, the second portion of the flow control ring may have a surface inclined with respect to the substrate supporting unit.

[0022] According to one or more embodiments, a substrate processing apparatus includes: a substrate supporting unit; a processing unit located on the substrate supporting unit; an exhaust unit connected to a reaction space between the substrate supporting unit and the processing unit; and a ring disposed below the exhaust unit to overlap with at least a portion of the exhaust unit, wherein a first gas in the reaction space can be transferred to the exhaust unit through a first surface of the ring, and a second gas in a lower space below the substrate supporting unit can be transferred to the exhaust unit through a second surface of the ring.

[0023] According to an example of the substrate treating apparatus, the first gas and the second gas may meet each other outside the reaction space.

[0024] According to one or more embodiments, a substrate processing apparatus includes: a substrate supporting unit; a processing unit located on the substrate supporting unit; and an exhaust unit connected to a reaction space between the substrate supporting unit and the processing unit, wherein a first gas in the reaction space and a second gas in a lower space below the substrate supporting unit can meet each other outside the reaction space.

[0025] According to an example of the substrate treating apparatus, the first gas and the second gas may meet each other at a point below the exhaust unit, which is outside the reaction space.

[0026] According to another example of the substrate processing apparatus, the exhaust unit may include a partition wall defining a side of the reaction space, and the first gas and the second gas may be configured to meet each other outside a surface of the partition wall contacting the reaction space. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] The above and other aspects, features and advantages of certain embodiments of the present disclosure will become more apparent through the following description in conjunction with the accompanying drawings, in which:

[0028] Figures 1 to 2 is a diagram of a substrate treating apparatus according to some embodiments of the inventive concept.

[0029] Figures 3 to 5 is a diagram of a substrate treating apparatus according to some embodiments of the inventive concept.

[0030] Figure 6 is a diagram of a substrate treating apparatus according to some embodiments of the inventive concept.

[0031] Figures 7 and 8 is a diagram of a substrate treating apparatus according to some embodiments of the inventive concept.

[0032] Figures 9 to 11 is a diagram of a substrate treating apparatus according to some embodiments of the inventive concept.

[0033] Figures 12 to 14 is a diagram of a substrate treating apparatus according to some embodiments of the inventive concept.

[0034] Figure 15 is a diagram of a substrate treating apparatus according to some embodiments of the inventive concept.

[0035] Figure 16 yes Figure 15 A partial enlarged view of the substrate processing equipment.

[0036] Figure 17 is a diagram of a substrate treating apparatus according to some embodiments of the inventive concept.

[0037] Figure 18 is a diagram of a substrate treating apparatus according to some embodiments of the inventive concept.

[0038] Figure 19 yes Figure 18 A partial enlarged view of the substrate processing equipment.

[0039] Figures 20 to 21 is a diagram of a substrate treating apparatus according to some embodiments of the inventive concept.

[0040] Figure 221 is a diagram illustrating the ring self-alignment process performed as the heating block rises.

[0041] Figure 23 yes Figure 22 A view of the ring is shown. DETAILED DESCRIPTION

[0042] Reference will now be made in detail to the embodiments, examples of which are illustrated in the accompanying drawings, wherein the same reference numerals always represent the same elements. In this regard, the present embodiment may have different forms and should not be construed as being limited to the description set forth herein. Therefore, the embodiments are described below only by reference to the accompanying drawings to explain various aspects of this specification. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items. When an expression such as "at least one" precedes a list of elements, it modifies the entire list of elements and does not modify the individual elements of the list.

[0043] The terms used herein are for the purpose of describing specific example embodiments only and are not intended to limit the present disclosure. As used herein, the singular forms of "a", "an" and "the" may also be intended to include the plural forms, unless the context clearly indicates otherwise. It should also be understood that when the terms "include", "have" and / or "comprise" are used in this specification, the presence of the features, integers, steps, processes, components, parts and / or combinations thereof is specified, but the presence or addition of one or more other features, integers, steps, processes, components, parts and / or combinations thereof is not excluded. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0044] It should be understood that although the terms first, second, etc. may be used herein to describe various components, parts, regions, layers, and / or portions, these components, parts, regions, layers, and / or portions should not be limited by these terms. These terms do not indicate any order, quantity, or importance, but are only used to distinguish one component, region, layer, and / or portion from another component, region, layer, and / or portion. Thus, a first component, component, region, layer, or portion discussed below may be referred to as a second component, component, region, layer, or portion without departing from the teachings of the example embodiments.

[0045] Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings, in which embodiments of the present disclosure are schematically shown. In the drawings, variations from the shapes shown are to be expected due to, for example, manufacturing techniques and / or tolerances. Therefore, the embodiments of the present disclosure should not be construed as limited to the specific shapes of the regions shown herein, but may include deviations in shapes resulting from, for example, the manufacturing process.

[0046] Figures 1 to 2is a diagram of a substrate treating apparatus according to some embodiments of the inventive concept. Figure 1 A substrate processing apparatus and a portion of the substrate processing apparatus (a cross section of a portion where the opening of the discharge unit 120 is not formed) are shown. Figure 2 The substrate processing apparatus and another portion of the substrate processing apparatus (a cross section of a portion forming the opening OP of the discharge unit 120 ) are shown.

[0047] Reference Figure 1 and Figure 2 The substrate processing apparatus may include a partition 100 , a substrate supporting unit 150 , a processing unit 110 , a discharge unit 120 , and at least one ring R. The substrate processing apparatus may include a reaction space 51 and a discharge space 55 connected to the reaction space 51 .

[0048] The partition 100 is a chamber for accommodating the substrate support unit 150, which may also be referred to as a chamber. In one embodiment, the reactor including the reaction space 51 is referred to as an inner chamber, and the overall structure of the substrate processing equipment surrounding multiple reactors (e.g., four reactors) may be referred to as an outer chamber. The exhaust line 18 may be disposed in the partition 100. In some embodiments, the exhaust line 18 may be formed to extend along the inner side of the sidewall of the partition 100. In one embodiment, the substrate processing equipment includes a first surface and a second surface adjacent to the first surface, and the exhaust line 18 may extend along the edge between the first surface and the second surface. In another embodiment, the exhaust line 18 may be formed to extend along the inner side of the lower wall of the partition 100.

[0049] The processing unit 110 may be located on a substrate supporting unit 150 configured to support a substrate. A reaction space 51 may be defined between the substrate supporting unit 150 and the processing unit 110. The processing unit 110 may serve as a first cover defining an upper surface of the reaction space 51. In other words, the first cover on the substrate supporting unit may include at least one processing unit 110.

[0050] The processing unit 110 may include components that perform appropriate functions depending on the function of the substrate processing apparatus. For example, when the substrate processing apparatus performs a deposition function, the processing unit 110 may include a reactant supplier (e.g., a showerhead assembly). In another embodiment, when the substrate processing apparatus performs a polishing function, the processing unit 110 may include a polishing pad.

[0051] The processing unit 110 may be a conductor and may function as an electrode for generating plasma. Specifically, the processing unit 110 may function as one electrode for generating plasma. Hereinafter, the processing unit 110 in this manner (in which the processing unit 110 functions as an electrode) is referred to as a gas supply electrode.

[0052] The substrate support unit 150 can be configured to provide a seating area for an object to be processed (not shown), such as a semiconductor or display substrate. The substrate support unit 150 can be supported by a drive (not shown) capable of vertical and rotational movement. Furthermore, the substrate support unit 150 can be a conductor and can serve as an electrode for generating plasma (i.e., an electrode opposite to a gas supply electrode).

[0053] The exhaust unit 120 may be located between the process unit 110 and the support member TLD. The exhaust unit 120 may extend to surround the reaction space 51. Gas in the reaction space 51 may be exhausted to the exhaust port 13 through the exhaust unit 120.

[0054] In one embodiment, the discharge unit 120 may serve as a second cover defining a side surface of the reaction space 51. The second cover including the discharge unit 120 may include a discharge space 55 connected to the reaction space 51. Thus, the discharge unit 120 may provide the discharge space 55. In addition, the discharge unit 120 may provide a space in which the processing unit 110 is accommodated. When the processing unit 110 is accommodated in the space, the processing unit 110 may contact the discharge unit 120.

[0055] The discharge unit 120 may include a partition wall W between the reaction space 51 and the discharge space 55. A first surface (e.g., an outer surface) of the partition wall W may define the reaction space 51, and a second surface (i.e., an inner surface facing the first surface) of the partition wall W may define the discharge space 55. For example, the reaction space 51 may be defined by the first surface side of the partition wall W, the upper surface of the substrate support unit 150, and the lower surface of the processing unit 110 serving as the first cover. In other words, one side of the reaction space 51 may be defined by the partition wall W of the discharge unit 120.

[0056] The exhaust unit 120 can provide a portion of the space for the object to be processed. For example, when the substrate processing apparatus performs a deposition function, the exhaust unit 120 can define a reaction space 51 for deposition. Furthermore, an exhaust space 55 can be defined within the exhaust unit 120. The reaction space 51 can be connected to the exhaust port 13 via the exhaust space 55 of the exhaust unit 120. More specifically, the gas in the reaction space 51 can be exhausted to the exhaust port 13 through the first channel C1, the exhaust space 55, and the opening OP.

[0057] In an example, the discharge unit 120 may include a connection wall C and an outer wall O extending from the partition wall W. The outer wall O of the discharge unit 120 is arranged parallel to the partition wall W and may contact the support member TLD. An opening OP may be formed in the outer wall O, and the discharge unit 120 and the discharge port 13 may be connected to each other through the opening OP. The connection wall C of the discharge unit 120 may extend to connect the partition wall W to the outer wall O. The connection wall C may provide a contact surface with the processing unit 110. The processing unit 110, which serves as the first cover, and the discharge unit 120, which serves as the second cover, may contact each other through the contact surface.

[0058] The support member TLD may contact the discharge unit 120 to support the process unit 110 and the discharge unit 120. The support member TLD may be supported by the partition plate 100. As described above, the support member TLD may function as a top cover supported by the partition plate 100 to cover the outer chamber while supporting the process unit 110 as a first cover and the discharge unit 120 as a second cover.

[0059] The support member TLD may be positioned between the partition 100 and a cover (e.g., a second cover including the discharge unit 120). Furthermore, the support member TLD may be positioned between the partition 100 and the discharge port 13. The support member TLD may include a path P connecting the discharge port 13 to the discharge line 18 of the partition 100. In another embodiment, a sealing member (not shown) may be positioned between the support member TLD and the partition. The sealing member may extend along the path P or the circumference of the discharge line 18 to prevent leakage of gas from the path P to the discharge line 18.

[0060] The at least one ring R may be disposed so as to surround the substrate support unit 150. For example, the at least one ring R may include a flow control ring FCR. The flow control ring FCR may be located below the discharge unit 120. More specifically, the flow control ring FCR may be arranged to vertically overlap at least a portion of the discharge unit 120. Due to this overlapping arrangement, a first channel C1 may be formed between the flow control ring FCR and the discharge unit 120. As a result, the first gas (e.g., source gas and / or reactant gas) in the reaction space 51 may be transferred to the discharge space 55 of the discharge unit 120 via the first surface (e.g., the upper surface) of the flow control ring FCR.

[0061] In more detail, the partition wall W of the discharge unit 120 may provide a first channel C1 connecting the reaction space 51 to the discharge space 55. For example, the first channel C1 may be formed between the discharge unit 120 and the at least one ring R, particularly between the discharge unit 120 and the flow control ring FCR. The first channel C1 may serve as a channel between the reaction space 51 and the discharge space 55. Therefore, the reaction space 51 and the discharge space 55 may communicate with each other through the first channel C1 provided by the partition wall W.

[0062] The flow control ring FCR can be separated from the support member TLD to form a second channel C2. The flow control ring FCR can move laterally on the substrate support unit 150 (i.e., slide against the substrate support unit 150). By adjusting the width or spacing of the second channel C2 through lateral movement, the pressure balance between the reaction space 51 and the lower space 57 below the substrate support unit 150 (i.e., the interior space of the outer chamber) can be controlled.

[0063] The second gas introduced into the lower space 57 through the filling gas inlet 114 can be transferred to the discharge space 55 through the second channel C2. In more detail, the second gas in the lower space 57 can be transferred to the discharge space 55 of the discharge unit 120 through the second surface (eg, side surface) of the flow control ring FCR.

[0064] The support member TLD may provide a second channel C2 connecting the lower space 57 to the drain space 55. For example, the second channel C2 may be formed between the support member TLD and the at least one ring R, particularly between the support member TLD and the flow control ring FCR. The second channel C2 may serve as a passage between the lower space 57 and the drain space 55. Therefore, the lower space 57 and the drain space 55 may communicate with each other through the second channel C2 provided by the support member TLD.

[0065] In this way, the first gas in the reaction space 51 and the second gas in the lower space 57 can move through different channels (i.e., the first channel C1 and the second channel C2). The first gas and the second gas that move to different channels can meet each other at a point other than the reaction space 51. For example, the first gas and the second gas can meet each other outside the reaction space 51. In more detail, the first gas and the second gas can meet each other at a location outside the reaction space 51 below the discharge unit 120.

[0066] In an example, the first gas and the second gas may be transferred from the corresponding channels C1 and C2 to the discharge unit 120 through a junction I below the discharge unit 120. The junction I may be disposed outside the partition wall W. More specifically, the junction I may be disposed outside the surface of the partition wall W that contacts the reaction space 51, among the side surfaces of the partition wall W. In one example, the junction I may be below the partition wall W of the discharge unit 120. In another example, the junction I may be the discharge space 55 in the discharge unit 120.

[0067] In either example, the first gas in the reaction space 51 and the second gas in the lower space 57 will not encounter each other in the reaction space 51. Therefore, the first gas (e.g., the reaction gas) and the second gas (e.g., the filler gas) can be prevented from colliding in the substrate edge region. In other words, by configuring the substrate processing apparatus so that the first gas in the reaction space 51 and the second gas in the lower space 57 encounter each other outside the surface of the partition wall in contact with the reaction space 51, turbulence that may occur in the substrate edge region can be prevented.

[0068] Furthermore, the first channel C1, through which the first gas in the reaction space 51 passes, and the second channel C2, through which the second gas in the lower space 57 passes, can be separated from each other by at least one ring R. Separation of the channels here means that the two channels extend without encountering each other. Therefore, the first channel C1 and the second channel C2, separated by at least one ring R, particularly the flow control ring FCR, can each extend without encountering each other. The first channel C1 and the second channel C2, separated by the flow control ring FCR, may meet at a junction I outside the flow control ring FCR and be conveyed to the exhaust space 55.

[0069] Thus, according to embodiments of the present inventive concept, the effect of the fill gas supplied from the lower portion of the reactor on the processing on the substrate can be minimized. In addition, according to embodiments of the present inventive concept, rapid gas discharge can be achieved by allowing the gas to be diverted and discharged through at least one ring structure (such as a flow control ring).

[0070] Figures 3 to 5 is a view of a substrate processing apparatus according to some embodiments of the present inventive concept. In more detail, Figure 3 A portion of the substrate processing apparatus (eg, exhaust lines 18 and 28 , a connection port CP, an external path EC connected to an external pump, etc.) is shown except for the cover (ie, the processing unit and the exhaust unit) and the exhaust port. Figure 4 Observed from the first direction Figure 3 View, Figure 5 Observed from the second direction Figure 3 The substrate processing apparatus according to the embodiment may be a variation of the substrate processing apparatus according to the above-described embodiment. Hereinafter, a repeated description of the embodiment will not be given here.

[0071] Reference Figures 3 to 5, exhaust lines 18 and 28 are formed in the partition plate 100. The exhaust lines 18 and 28 are connected to the external path EC through the connection port CP, and the external path EC is connected to the main exhaust path 211. Therefore, the gas in the reaction space and the gas in the lower space are exhausted to the exhaust pump EP via the exhaust ports 13 and 23, the exhaust lines 18 and 28, the external path EC, and the main exhaust path 211. Although not shown in the drawings, according to an embodiment of the present inventive concept, each of the exhaust ports 13 and 23 is provided with a flow control unit.

[0072] like Figure 4 As shown, two reactors R1a and R1b in a first orientation use internal discharge lines 18a and 18b, while the remaining two reactors in the opposite orientation use other internal discharge lines 28a and 28b. The two internal discharge lines 18 and 28 are connected to an external path EC via connection ports CP and CP', respectively. The external path EC can be implemented in one configuration or in multiple configurations.

[0073] As can be seen, the four reactors utilize at least one of the external paths EC and EC', the main exhaust path 211, and the exhaust pump EP. An isolation valve 210 may be added to the main exhaust path 211. Thus, during maintenance, the exhaust pump EP can be protected from the external atmosphere by the isolation valve 210. Furthermore, a pressure control valve (e.g., a throttle valve) may be added to the main exhaust path 211. The external path EC may be fixed in close contact with the lower surface of the outer chamber's partition 100, preventing movement. In an alternative embodiment, the two internal exhaust lines 18 and 28 may be connected to each other within the bottom wall of the outer chamber's partition 100 and directly connected to the main exhaust path 211, without the external path EC.

[0074] Reference again Figure 3 , a first external path EC connected to the first connection port CP may extend below the partition plate 100 toward the first corner portion C1 of the outer chamber. Additionally, a second external path EC' connected to the second connection port CP' (not shown) may extend below the partition plate 100 toward the second corner portion C2 of the outer chamber. The drain pump EP may be arranged on one surface of the substrate processing apparatus, for example, corresponding to the center between the first corner portion C1 and the second corner portion C2. The first external path EC may extend from the portion extending to the first corner portion C1 to the drain pump EP. Additionally, the second external path EC' may extend from the portion extending to the second corner portion C2 to the drain pump EP.

[0075] Figure 61 is a view of a substrate processing apparatus according to some embodiments of the present inventive concept. The substrate processing apparatus according to the embodiment may be a variation of the substrate processing apparatus according to the above-described embodiment. Hereinafter, a repeated description of the embodiment will not be given here.

[0076] Figure 6 There is shown an upper surface of the multi-reactor chamber 311. A plurality of reactors R are arranged in the chamber 311, and one side of each reactor R is connected to a discharge port 313. Figure 6 It is shown that each reactor R is connected to each discharge port 313 , and the discharge ports 313 are asymmetrically disposed with respect to the center of each reactor R.

[0077] A plurality of drain lines (not shown) may be formed in the partition of the chamber 311. For example, the chamber 311 may be rectangular in shape, and the plurality of drain lines may include a first drain line, a second drain line, a third drain line, and a fourth drain line. In some embodiments, the first to fourth drain lines may be arranged to correspond to the four vertices of the rectangle.

[0078] The chamber 311 may include a first reactor, a second reactor, a third reactor, and a fourth reactor. Each reactor may include a substrate supporting unit, at least one ring, a processing unit, an exhaust unit, and an exhaust port.

[0079] In more detail, the first reactor may include a first substrate supporting unit (not shown) housed in a partition of a chamber 311, at least one first ring surrounding the first substrate supporting unit, a first processing unit 312 on the first substrate supporting unit, a first exhaust unit 314 connected to a first reaction space between the first substrate supporting unit and the first processing unit 312, and a first exhaust port 313 connected to at least a portion of the first exhaust unit 314. As described above, the gas in the first reaction space and the gas in the lower space below the first substrate supporting unit can meet each other outside the first reaction space. Alternatively, the gas in the first reaction space and the gas in the lower space below the first substrate supporting unit can be transported to the first exhaust unit 314 via different channels. The different channels may be separated by the at least one first ring. The different channels may also extend along different surfaces of the at least one first ring.

[0080] The second reactor may include a second substrate supporting unit (not shown) housed in a partition of the chamber 311, at least one second ring surrounding the second substrate supporting unit, a second processing unit 312 on the second substrate supporting unit, a second exhaust unit 314 connected to a second reaction space between the second substrate supporting unit and the second processing unit 312, and a second exhaust port 313 connected to at least a portion of the second exhaust unit 314. As described above, the gas in the second reaction space and the gas in the lower space below the second substrate supporting unit can meet each other outside the second reaction space. Alternatively, the gas in the second reaction space and the gas in the lower space below the second substrate supporting unit can be transported to the second exhaust unit 314 via different channels. The different channels may be separated by the at least one second ring. The different channels may also extend along different surfaces of the at least one second ring.

[0081] The third reactor may include a third substrate supporting unit (not shown) housed in a partition of the chamber 311, at least one third ring surrounding the third substrate supporting unit, a third processing unit 312 on the third substrate supporting unit, a third exhaust unit 314 connected to a third reaction space between the third substrate supporting unit and the third processing unit 312, and a third exhaust port 313 connected to at least a portion of the third exhaust unit 314. As described above, the gas in the third reaction space and the gas in the lower space below the third substrate supporting unit can meet each other outside the third reaction space. Alternatively, the gas in the third reaction space and the gas in the lower space below the third substrate supporting unit can be transported to the third exhaust unit 314 via different channels. The different channels may be separated by the at least one third ring. The different channels may also extend along different surfaces of the at least one third ring.

[0082] The fourth reactor may include a fourth substrate supporting unit (not shown) housed in a partition of the chamber 311, at least one fourth ring surrounding the fourth substrate supporting unit, a fourth processing unit 312 on the fourth substrate supporting unit, a fourth exhaust unit 314 connected to a fourth reaction space between the fourth substrate supporting unit and the fourth processing unit 312, and a fourth exhaust port 313 connected to at least a portion of the fourth exhaust unit 314. As described above, the gas in the fourth reaction space and the gas in the lower space below the fourth substrate supporting unit may meet each other outside the fourth reaction space. Alternatively, the gas in the fourth reaction space and the gas in the lower space below the fourth substrate supporting unit may be transported to the fourth exhaust unit 314 via different channels. The different channels may be separated by the at least one fourth ring. The different channels may also extend along different surfaces of the at least one fourth ring.

[0083] Figures 7 and 81 is a view of a substrate processing apparatus according to some embodiments of the present inventive concept. The substrate processing apparatus according to the embodiment may be a variation of the substrate processing apparatus according to the above-described embodiment. Hereinafter, a repeated description of the embodiment will not be given here.

[0084] Reference Figure 7 and Figure 8 The at least one ring R may include at least one of a flow control ring FCR and an outer ring OR. The outer ring OR may be arranged to surround the flow control ring FCR. Therefore, the flow control ring FCR may be between the substrate support unit 150 and the outer ring OR.

[0085] The first channel C1 through which the first gas of the reaction space 51 flows may be between the exhaust unit 120 and the flow control ring FCR. The second channel C2 through which the second gas of the lower space 57 flows may be between the outer ring OR and the flow control ring FCR. In this way, the first channel C1 and the second channel C2 are separated by the flow control ring FCR, and since the separated first channel C1 and the second channel C2 can be connected to each other at the junction I outside the reaction space 51 and connected to the exhaust space 55, a stable processing schedule can be achieved.

[0086] The flow control ring FCR may be implemented in an "L" shape, and to this end, the flow control ring FCR may include a first portion FCR-1 and a second portion FCR-2. The first portion FCR-1 may be defined as a portion overlapping at least a portion of the substrate support unit 150. In an alternative embodiment, the first portion FCR-1 of the flow control ring FCR may be configured to be slidable on the substrate support unit 150.

[0087] In some embodiments, the substrate support unit 150 may be configured to be vertically movable. When the substrate support unit 150 is elevated, the flow control ring FCR may move up and down along with the vertical movement of the substrate support unit 150 by virtue of the first portion FCR-1 of the flow control ring FCR being arranged to overlap with the substrate support unit 150.

[0088] The second portion FCR-2 may be defined as a portion extending from the first portion FCR-1 in the vertical direction along the side of the substrate support unit 150. In addition, the second portion FCR-2 of the flow control ring FCR may extend in the horizontal direction (circumferential direction) along the side of the support member TLD. In some embodiments, the second portion FCR-2 may extend to overlap with at least a portion of the discharge unit 120. Although not shown in the drawings, in another embodiment, the flow control ring FCR may further include a third portion extending from the second portion FCR-2 to overlap with at least a portion of the discharge unit 120 (see FIG. Figure 18 FCR-3 in ).

[0089] The outer ring OR may be on the support TLD. More specifically, the outer ring OR may be between the discharge unit 120 and the support TLD. The outer ring OR may be slidable on the support TLD. The flow control ring FCR may be separated from the outer ring OR to form a second channel C2. The pressure balance between the reaction space 51 and the interior space of the outer chamber (i.e., the lower space 57) can be controlled by adjusting the spacing of the second channel C2.

[0090] The outer ring OR may include a curved structure at a corner portion adjacent to the junction I between the first channel C1 and the second channel C2. Such a curved structure can accelerate the flow of gas around the curved structure. In an alternative embodiment, the discharge unit 120 may also include a curved structure at a corner portion adjacent to the junction I. In this case, the junction I will be between the curved structure of the outer ring OR and the curved structure of the discharge unit 120.

[0091] By introducing the curved structure of the outer ring OR, the second gas moving through the second channel C2 can be accelerated to the discharge unit 120 with a laminar flow along the curved structure. Therefore, the collision between the first gas flowing in the first channel C1 and the second gas flowing in the second channel C2 at the junction I can be reduced. As a result, the curved structure can facilitate the discharge of gas around the junction I.

[0092] Figures 9 to 11 1 is a view of a substrate processing apparatus according to some embodiments of the present inventive concept. The substrate processing apparatus according to the embodiment may be a variation of the substrate processing apparatus according to the above-described embodiment. Hereinafter, a repeated description of the embodiment will not be given here.

[0093] Reference Figure 9 and Figure 10 , the flow control ring FCR may include a first portion FCR-1′ and a second portion FCR-2. The first portion FCR-1′ of the flow control ring FCR may be defined as a portion overlapping at least a portion of the support member TLD. Furthermore, the first portion FCR-1′ may extend to overlap at least a portion of the substrate support unit 150. Thus, the flow control ring FCR may be implemented in a “T” shape.

[0094] although Figure 9 and Figure 10 The first portion FCR-1′ is shown as being configured to overlap with the support TLD and the substrate supporting unit 150, but the first portion FCR-1′ may be configured to overlap only with the support TLD (see FIG. Figure 21 ). In this case, the flow control ring FCR will be implemented as "L".

[0095] The second portion FCR-2 of the flow control ring FCR may extend vertically from the first portion FCR-1′ along the side of the substrate support unit 150. Furthermore, the second portion FCR-2 of the flow control ring FCR may extend horizontally (circumferentially) along the side of the support member TLD. In other words, the second portion FCR-2 of the flow control ring FCR may extend between the substrate support unit 150 and the support member TLD.

[0096] By the configuration of the flow control ring FCR, the first channel C1 and the second channel C2 can be separated from each other in the reaction space 51. That is, the first channel C1 formed between the discharge unit 120 and the flow control ring FCR and the second channel C2 formed between the flow control ring FCR and the support TLD (or the outer ring OR on the support TLD) are separated from each other. Figure 12 )) can extend in the reaction space 51 without encountering each other.

[0097] In some embodiments, as Figure 9 and Figure 10 As shown, the first channel C1 and the second channel C2 may be separated by a flow control ring FCR and extend to the exhaust unit 120. In this case, the junction point of the first gas passing through the first channel C1 and the second gas passing through the second channel C2 will be the exhaust space 55 outside the reaction space 51.

[0098] The substrate support unit 150 may be configured to be vertically movable. For example, the substrate support unit 150 may be moved downward to load / unload a substrate in the lower space 57. Alternatively, the substrate support unit 150 may be moved upward to process a substrate in the reaction space 51. As the substrate support unit 150 moves upward and downward, the flow control ring FCR may contact the surface of the substrate support unit 150.

[0099] For example, when the substrate supporting unit 150 moves up and down, the lower surface of the first portion FCR-1' configured to overlap the substrate supporting unit 150 of the flow control ring FCR and the upper surface of the step of the substrate supporting unit 150 may contact each other. As a result, the reaction space 51 and the lower space 57 may communicate with the exhaust space 55 through the first channel C1 and the second channel C2, respectively, which are separated by the flow control ring FCR.

[0100] In some embodiments, the first portion FCR-1' of the flow control ring FCR may include an uneven structure Y. More specifically, the uneven structure Y may be formed in the first portion FCR-1' of the flow control ring FCR so as to overlap at least a portion of the upper surface of the step of the support member TLD. The uneven structure Y allows the second channel C2 to be formed between the first portion FCR-1' of the flow control ring FCR and the support member TLD.

[0101] In alternative embodiments, the first portion FCR-1' of the flow control ring FCR may not include an uneven structure. In this case, as the substrate support unit 150 moves up and down, the flow control ring FCR may also move up and down. As the flow control ring FCR moves up and down, a second channel C2 may be generated between the first portion FCR-1' and the upper surface of the step of the support member TLD. In either case, the first gas in the reaction space can be transferred to the exhaust unit via the first surface of the flow control ring FCR, and the second gas in the lower space can be transferred to the exhaust unit via the second surface of the flow control ring FCR.

[0102] In some embodiments, the flow control ring FCR may move up and down along with the vertical movement of the substrate support unit 150. Furthermore, the flow control ring FCR may slide relative to the support member TLD along with the vertical movement of the substrate support unit 150. In this case, the drainage efficiency of the first channel C1 and / or the drainage efficiency of the second channel C2 may vary depending on the degree of vertical movement of the substrate support unit 150.

[0103] exist Figure 11 and Figure 10 An exemplary configuration of the flow control ring FCR used in the embodiments of Figure 11 As shown in FIG. The flow control ring FCR having the first portion FCR-1′ and the second portion FCR-2 may have a shape corresponding to the shape of the substrate to be processed. For example, when the substrate to be processed is a circular wafer, the flow control ring may be implemented as a circle with a larger diameter. Figure 11 As shown, the flow control ring FCR may be implemented to have a "T"-shaped cross section. In addition, the first portion FCR-1'' of the flow control ring FCR may have an uneven structure Y, and the second gas in the lower space may be transferred to the discharge unit through the uneven structure Y.

[0104] Figures 12 to 14 1 is a view of a substrate processing apparatus according to some embodiments of the present inventive concept. The substrate processing apparatus according to the embodiment may be a variation of the substrate processing apparatus according to the above-described embodiment. Hereinafter, a repeated description of the embodiment will not be given here.

[0105] Reference Figure 12and Figure 13 The substrate processing apparatus may further include an outer ring OR disposed around the flow control ring FCR. In this case, a first portion FCR-1' of the flow control ring FCR may overlap at least a portion of the outer ring OR. Furthermore, a first channel C1 may be between the discharge unit 120 and the flow control ring FCR, and a second channel C2 may be between the outer ring OR and the flow control ring FCR. The outer ring OR may be on the support member TLD.

[0106] The flow control ring FCR may be configured to be slidable on the outer ring OR. For example, the lower surface of the flow control ring FCR or the upper surface of the outer ring OR may be surface-treated to have a relatively low roughness (eg, a roughness of 0.4 or less).

[0107] The second portion FCR-2 of the flow control ring FCR, ie, a portion extending in a vertical direction from the first portion FCR-1′ along the side of the substrate supporting unit 150 may have a surface inclined with respect to the substrate supporting unit 150 (see FIG. Figure 12 and 13 ). For example, the side surface of the substrate supporting unit 150 may extend in the vertical direction, and the side surface of the second portion FCR-2 of the flow control ring FCR may extend in a direction inclined with respect to the vertical direction. In another example, the side surface of the second portion FCR-2 of the flow control ring FCR may extend in the vertical direction, and the side surface of the substrate supporting unit 150 may extend in a direction inclined with respect to the vertical direction.

[0108] In this manner, by configuring the flow control ring FCR to slide on the outer ring OR and configuring the side surface of the second portion FCR-2 of the flow control ring FCR and the side surface of the substrate support unit 150 to be inclined relative to each other, the flow control ring FCR can move in the second direction as the substrate support unit 150 moves in the first direction. More specifically, when the substrate support unit 150 moves in the first direction, the substrate support unit 150 can contact the flow control ring FCR. The flow control ring FCR can move in the second direction (e.g., can slide in the horizontal direction) due to the force generated when the substrate support unit 150 continues to move in the first direction while in contact with the flow control ring FCR.

[0109] This force can be defined as the force of the substrate supporting unit pushing the flow control ring FCR. Since the flow control ring FCR is slidable on the outer ring OR, when the substrate supporting unit 150 moves up and down, the pushing force causes the flow control ring FCR to slide against the outer ring OR.

[0110] exist Figure 14 Shown in Figure 12 and Figure 13An exemplary configuration of a flow control ring FCR used in an embodiment of the present invention is shown. As described above, the flow control ring FCR may include a first portion FCR-1' extending to overlap the substrate support unit 150 and the outer ring OR, and a second portion FCR-2 extending vertically from the first portion. Furthermore, the second portion FCR-2 may be configured to have an inclined surface. For example, the inclined surface may be formed such that the inner diameter of one end portion closer to the first portion FCR-1' is smaller than the inner diameter of the other end portion farther from the first portion FCR-1'.

[0111] Figure 15 is a diagram of a substrate treating apparatus according to some embodiments of the inventive concept. Figure 16 yes Figure 15 1 is an enlarged view of a portion A in FIG. The substrate processing apparatus according to the embodiment may be a variation of the substrate processing apparatus according to the above-described embodiment. Hereinafter, a repeated description of the embodiment will not be given here.

[0112] Reference Figure 15 , a substrate (not shown) is mounted on the heating block 79. The heating block driver 710 in the lower space can vertically move the heating block 79. The loading and unloading of the substrate can be performed by the vertical movement of the heating block 79.

[0113] Gas supplied to the reactor is introduced into a reaction space 711 on a heating block 79 through a gas inlet 713 and a showerhead 72. A substrate is positioned on the heating block 79 (not shown). Process gas 716 is then exhausted after substrate processing (e.g., deposition) using the gas is complete (or during substrate processing). Process gas 716 is delivered to exhaust pipe 74 through the space between flow control ring 75 and exhaust pipe 74. Process gas 716 delivered to exhaust pipe 74 can be exhausted to an exhaust pump (not shown) via exhaust port 73 and reactor wall 71.

[0114] When the gas 715 is introduced into the reaction space 711 through the gas inlet 713, the filling gas 717 is introduced into the lower space 712 of the reactor through the filling gas inlet 714. Figure 15 As shown in area A of FIG, while the process gas 716 is discharged into the discharge space 76 in the discharge pipe 74, the filling gas 717 is supplied to the separation space between the heating block 79 and the flow control ring 75. By supplying the filling gas 717 to the separation space, the process gas 716 is prevented from being introduced into the reactor lower space 712. To achieve this prevention, an adjustment operation may be performed to balance the process pressure in the reaction space 711 and the pressure in the reactor lower space 712 to which the filling gas 717 is supplied.

[0115] Filling gas 717 introduced into the separation space between heating block 79 and flow control ring 75 can reduce exhaust efficiency. Specifically, after reacting, filling gas 717 introduced into the separation space collides with process gas 716, reducing exhaust efficiency. Furthermore, this gas collision occurs at the edge of the substrate. Consequently, gas collisions can affect the uniformity of the thin film being processed.

[0116] In more detail, Figure 16 In the figure, which shows a case where a heating block 79 is raised to form a reaction space 711 for substrate processing, collisions may occur between fill gas 717 and process gas 716 moving through the space between the heating block 79 and the flow control ring 75. This gas collision prevents the gases from being properly discharged into the exhaust pipe 74. Due to this poor exhaust flow in the substrate edge area, the uniformity of the thin film at the substrate edge is reduced. Therefore, the present invention seeks to disclose a configuration and apparatus for minimizing the impact of the fill gas on the processing in the reaction space.

[0117] Figure 17 1 is a view of a substrate processing apparatus according to some embodiments of the present inventive concept. The substrate processing apparatus according to the embodiment may be a variation of the substrate processing apparatus according to the above-described embodiment. Hereinafter, a repeated description of the embodiment will not be given here.

[0118] Reference Figure 17 To prevent the fill gas 717 from the lower space and the process gas 716 from the reaction space 711 from directly colliding near the edge of the substrate (i.e., the edge of the heating block 79), a flow control ring 75 is placed at the edge of the heating block 79. A first exhaust channel is formed between the flow control ring 75 and the exhaust pipe 74, through which the process gas 716 travels, and a second exhaust channel is formed between the flow control ring 75 and the outer ring 718, through which the fill gas 717 travels.

[0119] Therefore, if Figure 17 As shown in (b), direct collisions between process gas 716 and fill gas 717 around the substrate are prevented. Furthermore, because the corners of outer ring 718 have curved structures, fill gas 717 can be accelerated along the curved structure of outer ring 718, which forms the second exhaust channel, through the Coanda effect. The accelerated fill gas 717 can be efficiently discharged into exhaust space 76 of exhaust duct 74 while forming a laminar flow.

[0120] At the same time, the flow control ring 75 can move up and down together with the heating block 79. In this case, the height of the first exhaust channel formed between the flow control ring 75 and the exhaust pipe 74 can be adjusted according to the rising height of the heating block 79 and the flow control ring 75. Therefore, the exhaust efficiency of the process gas 716 discharged into the exhaust space 76 through the first exhaust channel can be controlled.

[0121] When the heat block 79 is lowered, the flow control ring 75 located on the heat block 79 can be lowered. When the lowering of the heat block 79 is continued for loading / unloading of substrates to be processed, the flow control ring 75 can be separated from the heat block 79, and the separated flow control ring 75 can be placed on the support member 750. The support member 750 can be fixed below the chamber CH. In an alternative embodiment, the support member 750 can be configured to be detachable below the chamber CH.

[0122] When the heating block 79 is raised, the flow control ring 75 placed on the support member 750 can be seated again on the heating block 79. Therefore, when the heating block 79 moves up and down, the flow control ring 75 on the support member 750 is separated from the support member 750, and the flow control ring 75 can move up and down together with the heating block 79.

[0123] Figure 18 is a diagram of a substrate treating apparatus according to some embodiments of the inventive concept. Figure 19 yes Figure 18 The substrate processing apparatus according to the embodiment may be a variation of the substrate processing apparatus according to the above-described embodiment. Hereinafter, a repeated description of the embodiment will not be given here.

[0124] Reference Figure 18 , the exhaust paths of the process gas 716 and the filling gas 717 are separated from each other. That is, the first exhaust channel for exhausting the process gas 716 and the second exhaust channel for exhausting the exhaust gas can be separated by the outer ring 718. Figure 18 As shown in FIG. 2B , the process gas 716 is discharged into the exhaust pipe 74 through a first exhaust channel formed between the exhaust pipe 74 and the outer ring 718 without colliding with the fill gas 717. The fill gas 717 is discharged into the exhaust pipe 74 through a second exhaust channel between the chamber wall (i.e., the support member) and the outer ring 718 without colliding with the process gas 716.

[0125] The flow control ring 75 may include: a first portion FCR-1″ disposed to overlap at least a portion of the substrate supporting unit including the heating block 79; a second portion FCR-2 extending from the first portion FCR-1″ in a vertical direction along a side of the substrate supporting unit; and a third portion FCR-3 extending from the second portion FCR-2 in a horizontal direction to overlap at least a portion of the outer ring 718.

[0126] The flow control ring 75 is provided at the edge of the heating block 79 and moves up and down together with the heating block 79. When the heating block 79 is raised to the substrate processing position, the flow control ring 75 and the outer ring 718 perform a face seal 719 to physically prevent collision between the reaction gas and the filling gas.

[0127] In more detail, as the heating block 79 rises, the lower surface of the first portion FCR-1” may contact the heating block 79, and the upper surface of the third portion FCR-3 may be connected to the lower surface of the outer ring 718. Therefore, as the heating block 79 continues to rise, the flow control ring FCR may also rise through the first portion FCR-1”, and the outer ring 718 may also rise through the third portion FCR-3. When the outer ring 718 is lifted by the accompanying rising action, a second discharge channel may be formed by separating between the chamber wall CH (i.e., the support member) and the outer ring 718.

[0128] When the heat block 79 descends, the lower surface of the outer ring 718 may contact the chamber wall CH (i.e., the support member), and the outer ring 718 may be located on the chamber wall CH. Then, as the heat block 79 continues to descend, the flow control ring 75 located on the heat block 79 may separate from the heat block 79, and the lower surface of the third portion FCR-3 may contact the upper surface of the support member 750. As a result, the flow control ring 75 separated from the heat block 79 will be placed on the support member 750.

[0129] according to Figure 18 An embodiment of Figure 17 In different embodiments, the heights of the first and second exhaust channels can be determined according to the degree to which the flow control ring 75 lifts the outer ring 718, that is, the height of the heating block 79. Therefore, the exhaust efficiency of the filling gas 717 or the process gas 716 can be controlled, and the lifting position of the heating block 79 can be determined to achieve optimal exhaust efficiency.

[0130] At the same time, Figure 18In (b), the side of outer ring 718 can be separated from the side of flow control ring 75. More specifically, the second portion FCR-2 of flow control ring 75 and outer ring 718 can be separated from each other to form a space. Due to this space, a blind spot 720 exists between outer ring 718 and flow control ring 75. Because no fill gas is supplied to the blind spot, some process gas exhausted from the reaction space remains. Figure 19 yes Figure 18 (b) A magnified view of the area surrounding the blind spot 720.

[0131] like Figure 19 As shown, in some embodiments, at least one of the exhaust conduit 74 and the outer ring 718 may include a curved structure. The curved structure may be configured to facilitate exhausting the process gas (e.g., reactant gas) in the separation space into the first exhaust channel. For example, the curved structure may have a certain radius of curvature.

[0132] Reference Figure 19 , the reaction gas discharged from the reaction space to the exhaust pipe 74 is discharged in about three forms. The flow in the form of "G1" is directly discharged from the reaction space into the exhaust space 76 ( Figure 18 ). Flow in the "G2" pattern flows along the outer wall of exhaust duct 74, is accelerated near the curved surface L of exhaust duct 74, and is directed into the exhaust channel. Flow in the "G3" pattern flows into blind spot 720, and then flows back into the exhaust channel due to suction in the exhaust space. Here, flow in the "G3" pattern is accelerated near the curved surface L' of outer ring 718 to be directed into the exhaust channel. In other words, the curved structure of outer ring 718 prevents residual gas and turbulence in the blind spot, allowing for faster and smoother exhaust and removal of process gas.

[0133] Figure 20 1 is a view of a substrate processing apparatus according to some embodiments of the present inventive concept. The substrate processing apparatus according to the embodiment may be a variation of the substrate processing apparatus according to the above-described embodiment. Hereinafter, a repeated description of the embodiment will not be given here.

[0134] Reference Figure 20, the exhaust duct 74 may include a first curved structure D1, and the outer ring 718 may include a second curved structure D2. In this case, the junction I between the first channel for discharging the process gas 716 and the second channel for discharging the fill gas 717 may be between the first curved structure D1 of the exhaust duct 74 and the second curved structure D2 of the outer ring 718. In this way, the corners of the outer ring 718 and the exhaust duct 74 exposed to the exhaust duct are curved. Consequently, the discharge of the fill gas 717 and the process gas 716 (e.g., reactant gas) can be accelerated along the curved surface of the outer ring 718 or the exhaust duct 74 by inducing the Coanda effect.

[0135] exist Figures 18 to 20 In the embodiment, to smoothly and quickly discharge the fill gas 717 and process gas 716, the corners of the exhaust duct and the outer ring that encounter the gases are curved to induce a Coanda effect. To achieve this, the curvature of the curved surface may preferably be R1 or greater (i.e., a radius of curvature of 1 mm or greater).

[0136] Figures 18 to 20 The technical features of the embodiment are as follows.

[0137] 1. The gap connecting the upper and lower spaces of the reactor is bypassed. That is, the gas movement from the upper part to the lower part and the gas movement from the lower part to the upper part can be blocked, and the lower part exhaust can be suppressed by immediately exhausting the lower gas.

[0138] 2. The distance between the existing flow control ring and the heating block (ie, the channel through which the filling gas in the lower space is exhausted) can be separated from the substrate to suppress process variations due to the lower gas.

[0139] 3. A plasma confinement effect can be obtained by arranging a flow control ring on the side of the heating block, and a uniform and stable plasma process can be performed by concentrating the plasma in the reaction space on the substrate.

[0140] 4. The flow control ring arranged on the side of the heating block can move according to the vertical movement of the heating block. Therefore, the width and volume of the discharge channel formed between the discharge pipe and the outer ring and between the outer ring and the chamber wall can be controlled.

[0141] In the above Figures 18 to 20 In an embodiment of the present invention, the exhaust gas flow is controlled by a structure in which the flow control ring is arranged on the side of the heating block (ie, in which the flow control ring is arranged to overlap with a portion of the heating block in the vertical direction). Figure 21A structure is shown in which a flow control ring is provided on the outer ring so as to overlap a portion of the outer ring. In this embodiment, the exhaust gas flow is controlled by a structure that prevents collision between the reaction gas and the filling gas around the heating block.

[0142] Reference Figure 21 The separation distance between the side of the heating block 79 and the flow control ring 75 is very narrow. For example, the separation distance can be configured to be within 0.2 mm. As a result, it is difficult for the fill gas 717 to enter the reaction space or for the process gas 716 to enter the lower space. On the other hand, the flow control ring 75 and the outer ring 718 are separated far enough from each other to allow gas to pass through, thereby forming an exhaust channel for the fill gas 717.

[0143] Therefore, if Figure 21 As shown, the process gas 716 and the filling gas 717 do not collide with each other around the heating block and can be discharged into the discharge space 76 through the corresponding discharge channels. Figure 21 By greatly reducing the separation distance between the side of the heating block 79 and the flow control ring 75, collisions between the process gas 716 and the fill gas 717 are minimized. However, another advantage of this structure is that it can promote self-alignment of the flow control ring 75 in the reaction space. For example, when the flow control ring 75 is asymmetrically arranged on the upper surface of the outer ring 718, that is, when the center of symmetry of the inner diameter of the flow control ring 75 does not coincide with the center of the heating block 79, when the heating block 79 is raised, the heating block 79 forms surface contact with a portion of the inner surface of the flow control ring 75, thereby applying a force in the horizontal direction relative to the flow control ring 75. Therefore, the center of symmetry of the inner diameter of the flow control ring 75 and the center of the heating block 79 can coincide.

[0144] Figure 22 Such a process is shown. Figure 22 The process of self-aligning the flow control ring 75 by the heat block 79 is shown.

[0145] -First Operation ( Figure 22 (a)): The heating block 79 rises.

[0146] - Second Operation ( Figure 22 (b)): The side of the heating block 79 is in contact with the inner side of the flow control ring 75.

[0147] -Third Operation ( Figure 22 (c) While the heating block 79 continues to rise in contact with the flow control ring 75, the flow control ring 75 begins to move. For example, the flow control ring 75 moves laterally (i.e., slides) against the outer ring 718 in surface contact on the upper surface of the step of the outer ring 718.

[0148] -Fourth Operation ( Figure 22 (d)): As the heating block 79 continues to rise in contact with the flow control ring 75, the self-alignment of the flow control ring 75 continues.

[0149] -Fifth Operation ( Figure 22 (e)): The heating block 79 is raised to the substrate processing position and the self-alignment of the flow control ring 75 is completed.

[0150] according to Figure 22 The control method of the substrate processing apparatus of the embodiment (particularly the self-alignment of the flow control ring) is particularly important in high-temperature processing (e.g., processing at temperatures exceeding 500°C). At high temperatures, due to thermal deformation of the heat block 79 and the flow control ring 75, the width of the gap between the heat block 79 and the flow control ring 75 depends on the side of the heat block 79 and the position of the flow control ring 75. Therefore, when the flow control ring 75 is fixed to the outer ring 718, filler gas or reactive gas may be introduced to specific locations in the gap, which may affect the uniformity of the thin film around the substrate.

[0151] according to Figure 22 In the embodiment, the flow control ring 75 is self-aligned by contact between the heat block 79 and the flow control ring 75, thereby preventing deformation caused by high temperatures and the resulting non-uniformity in processing. To maintain this structure, the sidewalls of the flow control ring 75 and the sidewalls of the outer ring 718 are spaced at regular intervals to promote alignment of the flow control ring 75 on the upper surface of the outer ring 718.

[0152] Figure 23 yes Figure 22 Figure 7 is a diagram of a flow control ring 75 used in a flow control ring.

[0153] Reference Figure 22 and Figure 23 The lower surface of flow control ring 75, i.e., the portion of flow control ring 75 that contacts the upper surface of outer ring 718, has an uneven structure Y that supports flow control ring 75 on outer ring 718 while providing a discharge passage for a filler gas such as nitrogen (N2). Furthermore, the surface roughness of the inner surface of the flow control ring may be 0.4 or less, so that the inner surface of flow control ring 75 contacts heating block 79, slides under the weight of the flow control ring, and self-alignment is achieved through the sliding.

[0154] It should be understood that the embodiments described herein should be considered in a descriptive sense only and not for purposes of limitation. The description of features or aspects in each embodiment should generally be considered to be applicable to other similar features or aspects in other embodiments. Although one or more embodiments have been described with reference to the accompanying drawings, it will be understood by those skilled in the art that various changes in form and details may be made without departing from the spirit and scope of this disclosure as defined by the appended claims.

Claims

1. A substrate processing device comprising: substrate supporting unit; a processing unit located on the substrate supporting unit; and a discharge unit connected to a reaction space between the substrate supporting unit and the processing unit, The first gas in the reaction space is discharged to the discharge unit through the first channel. The second gas in the lower space below the substrate supporting unit is discharged to the discharge unit through the second passage, and The first channel and the second channel are combined with each other on the lower surface of the discharge unit. wherein the first channel and the second channel intersect each other at a point outside the reaction space; wherein the first channel extends along the inner lower surface of the discharge unit; wherein a vertical axis extending through the second passage intersects an inner lower surface of the discharge unit; and The vertical axis and the horizontal axis extending through the first channel intersect at a point outside the reaction space, so that a collision between the first gas and the second gas in the edge region of the substrate can be prevented.

2. The substrate processing apparatus according to claim 1, wherein The discharge unit further comprises: a partition wall defining a side of the reaction space; an outer wall parallel to the dividing wall; and a connecting portion extending to connect the partition wall to the outer wall, Wherein, the first channel and the second channel are located below the partition wall, The first gas in the reaction space and the second gas in the lower space intersect each other outside the contact reaction space of the partition wall, so that turbulence in the substrate edge region can be prevented.

3. The substrate processing apparatus according to claim 1 , further comprising: a flow control ring surrounding the substrate support unit, wherein the first gas in the reaction space is discharged to the discharge unit through the first surface of the flow control ring, The second gas in the lower space below the substrate supporting unit is discharged to the discharge unit through the second surface of the flow control ring.

4. The substrate processing apparatus according to claim 3, The flow control ring overlaps at least a portion of the discharge unit below the discharge unit.

5. The substrate processing apparatus according to claim 3, further comprising: an outer ring surrounding the flow control ring, wherein the first channel is between the lower surface of the discharge unit and the upper surface of the flow control ring, and The second passage is between the inner surface of the outer ring and the outer surface of the flow control ring.

6. The substrate processing apparatus according to claim 5, further comprising: a support member configured to support the processing unit and the discharge unit; and The outer ring is located between the discharge unit and the support member.

7. The substrate processing apparatus according to claim 5, wherein: The substrate supporting unit is configured to be vertically movable, and The flow control ring is configured to move up and down according to vertical movement of the substrate supporting unit.

8. The substrate processing apparatus according to claim 1, further comprising a third channel connected to the first channel and the second channel, A T-shaped channel is formed below the discharge unit by the first channel, the second channel, and the third channel.

9. The substrate processing apparatus according to claim 5, wherein: The flow control ring comprises: a first portion overlapping at least a portion of the substrate supporting unit; and The second portion extends from the first portion along a side surface of the substrate supporting unit.

10. The substrate processing apparatus according to claim 9, wherein The flow control ring further comprises: A third portion extends from the second portion to overlap at least a portion of the discharge unit.

11. The substrate processing apparatus according to claim 5, wherein The flow control ring comprises: a first portion overlapping at least a portion of the outer ring; and The second portion extends from the first portion along a side surface of the substrate supporting unit.

12. The substrate processing apparatus according to claim 11, wherein The substrate supporting unit is configured to be vertically movable, and When the substrate supporting unit moves up and down, the flow control ring slides relative to the outer ring by a thrust of the substrate supporting unit.

13. The substrate processing apparatus according to claim 11, wherein The first portion of the flow control ring includes an uneven structure, and The second passage is formed between the first portion of the flow control ring and the outer ring according to the uneven structure.

14. The substrate processing apparatus according to claim 11, wherein The second portion of the flow control ring has a surface inclined with respect to the substrate supporting unit.

15. A substrate processing device comprising: substrate supporting unit; a processing unit located on the substrate supporting unit; a discharge unit connected to a reaction space between the substrate supporting unit and the processing unit; and a ring below the discharge unit and overlapping at least a portion of the discharge unit; The first gas in the reaction space is transferred to the exhaust unit through the first surface of the ring, and The second gas in the lower space below the substrate supporting unit is transferred to the exhaust unit through the second surface of the ring, The substrate processing equipment further comprises: a first passage between the reaction space and the discharge unit; and a second passage between the lower space and the discharge unit, wherein the first channel and the second channel are joined to each other on the inner lower surface of the discharge unit at a point outside the reaction space; wherein the first channel extends along an inner lower surface of the discharge unit; and wherein a vertical axis extending through the second passage intersects an inner lower surface of the discharge unit; and The vertical axis and the horizontal axis extending through the first channel intersect at a point outside the reaction space, so that a collision between the first gas and the second gas in the edge region of the substrate can be prevented.

16. The substrate processing apparatus according to claim 15, further comprising a third channel connected to the first channel and the second channel, A T-shaped channel is formed below the discharge unit by the first channel, the second channel, and the third channel.

17. A substrate processing apparatus, comprising: substrate supporting unit; a processing unit located on the substrate supporting unit; and a discharge unit connected to a reaction space between the substrate supporting unit and the processing unit, a first channel for flowing a first gas within the reaction space; as well as a second passage for flowing a second gas in a lower space below the substrate supporting unit, wherein the first channel and the second channel are connected at a point outside the reaction space, wherein the first channel extends along the inner lower surface of the discharge unit, and wherein a vertical axis extending through the second passage intersects an inner lower surface of the discharge unit; and The vertical axis and the horizontal axis extending through the first channel intersect at a point outside the reaction space, so that a collision between the first gas and the second gas in the edge region of the substrate can be prevented.

18. The substrate processing apparatus according to claim 17, further comprising a third channel connected to the first channel and the second channel, A T-shaped channel is formed below the discharge unit by the first channel, the second channel, and the third channel.

19. The substrate processing apparatus according to claim 17, wherein: The discharge unit includes: a partition wall defining a side surface of the reaction space; and The first gas and the second gas meet each other outside the surface of the partition wall in contact with the reaction space, The first gas in the reaction space and the second gas in the lower space intersect each other outside the contact reaction space of the partition wall, so that turbulence in the substrate edge region can be prevented.

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