Wafer processing device and wafer processing equipment

Abstract

The invention relates to a wafer processing device and wafer processing equipment. The wafer processing device comprises a base, a driving module, a heating module and a shielding unit. The driving module comprises a rotating piece, and the rotating piece is arranged on the base in a self-rotating mode; the heating module is movably arranged on the base along the radial direction of the wafer; the shielding unit is movably arranged on the base in the radial direction of the wafer, and the shielding unit is used for shielding heat of the heating module so as to limit the heating range of the heating module; wherein at least one of the heating module and the shielding unit is connected with the rotating piece, the rotating piece is configured to be used for synchronously driving the heating module and the shielding unit so that the heating module and the shielding unit can get close to or get away from the rotating piece in the radial direction of the wafer, and the moving directions of the heating module and the shielding unit are opposite. According to the wafer processing device, the structure is more integrated and simplified, the use is more convenient, and the influence on the production efficiency is avoided.

Description

Technical Field

[0001] The present application relates to the field of semiconductor equipment, and in particular to a wafer processing device and wafer processing equipment. Background Art

[0002] During the semiconductor manufacturing process, the expansion film on the back of the wafer is stretched during the wafer expansion process. This stretching causes the originally flat expansion film to become loose. Therefore, after the expansion process, the loose expansion film on the wafer needs to be heated to shrink it and restore its tension. In related technologies, heating elements are typically used to heat the expansion film. However, the heat from the heating element can affect the wafer itself and other adjacent components, so shielding plates are often used to limit the heating range of the heating element.

[0003] Current wafers come in varying sizes. To heat the relaxed expanded film on wafers of varying sizes, the heater and shielding plate must be switched in position based on the wafer size. In related art, when both a heater and a shielding plate are provided, these need to be switched individually, making their structure and use more complex. Summary of the Invention

[0004] The purpose of this application is to provide a wafer processing device and wafer processing equipment to solve the problems of complex structure and use of heating elements and shielding plates in related technologies.

[0005] In order to achieve the above-mentioned object, the present application provides a wafer processing device, which is used to heat-treat an expansion film attached to a wafer, and the wafer processing device includes:

[0006] base;

[0007] A driving module, comprising a rotating member, wherein the rotating member is rotatably disposed on the base;

[0008] a heating module, the heating module being movably disposed on the base along a radial direction of the wafer; and

[0009] a shielding unit, the shielding unit being movably disposed on the base along a radial direction of the wafer, the shielding unit being used to shield the heat of the heating module to limit a heating range of the heating module;

[0010] At least one of the heating module and the shielding unit is connected to the rotating member, and the rotating member is configured to synchronously drive the heating module and the shielding unit so that the heating module and the shielding unit move closer to or away from the rotating member along the radial direction of the wafer, wherein the movement directions of the heating module and the shielding unit are opposite.

[0011] As an optional embodiment, the moving path of the heating module has a first position and a second position.

[0012] The shielding unit is configured such that when the heating module moves to the first position, the shielding unit moves to the second position, and when the heating module moves to the second position, the shielding unit moves to the first position. Thus, when the heating module moves to the first position, the shielding unit can move to the second position, preventing the heat of the heating module at the first position from affecting the wafers within the second position or other components disposed adjacent to the second position. When the heating module moves to the second position, the shielding unit can move to the first position, preventing the heat of the heating module at the second position from affecting the wafers within the first position or other components disposed adjacent to the first position.

[0013] As an optional embodiment, the driving module includes a first transmission member, one end of which is connected to the rotating member, and the other end is connected to the heating module or the shielding unit. In this way, when the rotating member rotates, on the one hand, the rotational motion of the rotating member will be converted into the swing of the first transmission member, that is, when the rotating member rotates, the first transmission member will swing relative to the rotating member and the heating module. On the other hand, the rotational motion of the rotating member will be converted into the linear motion of the first transmission member along the radial direction of the wafer, that is, when the rotating member rotates, the rotational force of the rotating member will be converted into a pulling force or a thrust on the heating module. In this way, the rotating member can drive the heating module to perform linear motion along the radial direction of the wafer through the first transmission member, so that the heating module can approach or move away from the rotating member.

[0014] As an optional embodiment, the wafer processing device includes a synchronization module disposed on the base, the heating module and the shielding unit are respectively connected to the synchronization module, and the synchronization module is configured to control the heating module and the shielding unit to move in the opposite direction of the radial direction of the wafer when one of the heating module and the shielding unit moves in the radial direction of the wafer. Through the synchronization module, the rotating member can be indirectly connected to the shielding unit or the heating module. In this way, when the rotating member drives one of the heating module and the shielding unit to move through the first transmission member, the other of the heating module and the shielding unit can be driven to move through the synchronization module.

[0015] As an optional embodiment, the synchronization module includes a first synchronous pulley, a second synchronous pulley and a synchronous belt, the first synchronous pulley and the second synchronous pulley are rotatably provided on the base and are arranged at intervals on the moving path of the heating module;

[0016] The synchronous belt is mounted on the first and second synchronous pulleys, respectively, to form a first and second segment arranged opposite each other. The heating module is connected to one of the first and second segments, and the shielding unit is connected to the other of the first and second segments. In this way, the synchronous belt mounted on the first and second synchronous pulleys forms a closed loop structure. The two pulleys drive one of the first and second segments to move linearly and force the other of the first and second segments to move in the opposite direction. When the heating module moves linearly along the radial direction of the wafer, the shielding unit can move in the opposite direction.

[0017] As an optional embodiment, the driving module includes a second transmission member, one end of the second transmission member is connected to the rotating member, and the other end is connected to the shielding unit;

[0018] The end of the second transmission member connected to the rotating member and the end of the first transmission member connected to the rotating member are staggered in the circumferential direction of the rotating member, so that when the rotating member rotates, it pulls one of the first transmission member and the second transmission member and pushes the other of the first transmission member and the second transmission member. In this way, when the rotating member rotates, it can generate a pulling force on one of the first transmission member and the second transmission member to move closer to the rotating member, and can also generate a pushing force on the other of the first transmission member and the second transmission member to move away from the rotating member. In this way, the rotating member can drive the heating module and the shielding unit to perform linear motion along the radial direction of the wafer through the first transmission member and the second transmission member, and the movement directions of the heating module and the shielding unit are opposite.

[0019] As an optional embodiment, the base is provided with a bearing seat and a bearing mounted on the outside of the bearing seat, and the rotating member is constructed in an annular shape and mounted on the bearing, so that the rotating member can be rotatably mounted on the base. The bearing and the bearing seat ensure that the rotating member can be rotatably mounted on the base while minimizing friction during rotation of the rotating member. The rotating member can be provided with a shaft body, and multiple first transmission members are rotatably mounted on the shaft body, so that the first transmission members can be rotatably connected to the rotating member constructed in an annular shape.

[0020] As an optional embodiment, the wafer processing device includes a driving member, wherein:

[0021] The driving member is configured to drive the rotating member to rotate, and / or,

[0022] The driving member is configured to drive the heating module to move on the base along the radial direction of the wafer, and / or,

[0023] The driving member is configured to drive the shielding unit to move on the base along the radial direction of the wafer. In this way, the driving member can directly or indirectly provide power to the rotating member, so that the rotating member synchronously drives the shielding unit and the heating module.

[0024] As an optional embodiment, a plurality of heating modules and a plurality of shielding units are provided, and the plurality of heating modules and the plurality of shielding units are respectively arranged around the rotating member and connected to the rotating member, and the rotating member is configured to synchronously drive the plurality of heating modules and the shielding units to move radially of the wafer. In this way, during one rotation of the rotating member, the synchronization module can simultaneously drive the plurality of heating modules toward the rotating member or away from the rotating member, and can also simultaneously drive the plurality of shielding units toward the rotating member or away from the rotating member. In this way, the rotational motion of the rotating member can be converted into linear motion of the heating module and linear motion of the shielding unit, respectively. When multiple shielding units and multiple heating modules are provided, the operator does not need to individually adjust the positions of the multiple heating modules and the multiple shielding units. When multiple shielding units and heating modules are provided, the structure of the wafer processing device is more integrated and simplified, and the use of the wafer processing device is also more convenient, avoiding the impact on production efficiency.

[0025] On the other hand, the present application further provides a wafer processing device, the wafer processing device is used to heat treat an expansion film attached to the wafer, the edge of the expansion film is fixed on the wafer frame, and the wafer processing device includes:

[0026] a thermal expansion plate, used for carrying the expansion film;

[0027] The wafer processing apparatus as described in any one of the above; and

[0028] A driving device is connected to the base and is used to drive the base to rotate.

[0029] Compared with the prior art, the present invention has the following advantages:

[0030] The wafer processing device of the present application, through the rotating part, can simultaneously drive the heating module and the shielding unit to move in the radial direction of the wafer during one rotation of the rotating part, and the rotational motion of the rotating part can be converted into the linear motion of the heating module and the linear motion of the shielding unit respectively. When the heating module and the shielding unit are provided at the same time, the heating module and the shielding unit can be linked together, and the operator can make one of the heating module and the shielding unit close to the rotating part and the other away from the rotating part by only using the rotating part. Compared with the related art, the heating module and the shielding unit need to be switched by the operator separately. The wafer processing device of the present application, while ensuring that the expansion film of wafers of different sizes can be heated, the heating module and the shielding unit can also be switched by the rotating part at the same time, making the structure of the wafer processing device more integrated and simplified, and the operator does not need to adjust the position of the heating module and the shielding unit separately. The use of the wafer processing device is also more convenient, avoiding the impact on production efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following briefly introduces the drawings required for use in the embodiments. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0032] Figure 1 It is a structural schematic diagram of a wafer before wafer expansion in the related art;

[0033] Figure 2 It is a structural schematic diagram of a wafer processing device disclosed in an embodiment of the present application;

[0034] Figure 3 is a top view of a wafer processing apparatus disclosed in an embodiment of the present application;

[0035] Figure 4 Schematic diagram of the structure of the shielding unit and the heating module disclosed in the embodiment of the present application;

[0036] Figure 5-Figure 7 is a schematic diagram of the motion of the first transmission member and the second transmission member disclosed in the embodiment of the present application;

[0037] Figure 8 yes Figure 2 Enlarged view of part A;

[0038] Figure 9 is a schematic structural diagram of a driving module disclosed in an embodiment of the present application;

[0039] Figure 10 yes Figure 2Magnified view of part B.

[0040] Description of reference numerals:

[0041] 1-wafer processing device, 11-base, 111-first opening, 112-second opening, 113-first avoidance hole, 114-first mounting rod, 115-second mounting rod, 116-bearing, 117-bearing seat, 118-second avoidance hole, 12-drive module, 121-rotating member, 1211-axis, 122-first transmission member, 123-second transmission member, 13-heating module, 14-shielding unit, 15-synchronization module, 151-first synchronous pulley, 152-second synchronous pulley, 153- Synchronous belt, 1531-first section, 1532-second section, 16-mounting unit, 17-driving member, 171-handle, 18-locking module, 181-latch, 182-locking plate, 1821-first positioning hole, 183-latch seat, 1831-second positioning hole, 19-position detection module, 191-detection sensor, 192-trigger part, 193-mounting slide rail, 2-wafer, 21-expansion membrane, 22-wafer frame, 23-grain, 24-pitch, 3-first connecting platform, 31-second connecting platform. DETAILED DESCRIPTION

[0042] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of this application. When the following description refers to the drawings, unless otherwise indicated, the same numbers in different drawings represent the same or similar elements.

[0043] In this application, terms such as "upper," "lower," "left," "right," "front," "back," "inner," and "outer" indicate positions or locations based on the positions or locations shown in the accompanying drawings. These terms are primarily intended to better describe this application and its embodiments and are not intended to limit the devices, elements, or components indicated to having a specific orientation, or to being constructed or operated in a specific orientation.

[0044] Furthermore, some of the above terms may be used to express other meanings besides indicating a position or location. For example, the term "on" may also be used to indicate a dependency or connection in certain circumstances. Those skilled in the art will understand the specific meanings of these terms in this application based on the specific circumstances.

[0045] Furthermore, the terms "installed," "disposed," "provided with," "connected," and "connected" should be interpreted broadly. For example, they can refer to fixed connections, removable connections, or integral structures; mechanical connections or electrical connections; direct connections, indirect connections through an intermediary, or internal communication between two devices, elements, or components. Those skilled in the art will understand the specific meanings of these terms in this application based on the specific circumstances.

[0046] Furthermore, the terms "first," "second," and the like are primarily used to distinguish between different devices, elements, or components, which may or may not have the same specific type and configuration, and are not intended to indicate or imply the relative importance or quantity of the devices, elements, or components indicated. Unless otherwise specified, "plurality" means two or more.

[0047] Reference Figure 1 , Figure 1 This is a schematic diagram of the structure of wafer 2 before expansion in the related art. In certain production processes of semiconductor wafer 2, an expansion film 21 is usually adhered to the lower surface of wafer 2, and the edge of expansion film 21 is fixed to wafer frame 22. When wafer 2 is expanded, the expansion film 21 on the lower surface of wafer 2 is expanded and stretched. As the expansion film 21 is expanded and stretched, it exerts a tensile force on wafer 2, which is tightly attached to it. This can break the modified layer produced by laser hidden cutting on the saw path of wafer 2, separating wafer 2 into individual grains 23 along the path of the modified layer. Alternatively, wafer 2 separated by initial stretching through "cold expansion" can be stretched a second time to increase the spacing 24 between grains 23 on wafer 2. The originally flat expansion film 21 will become loose after being stretched. After the expansion process, the loose expansion film 21 between the wafer frame 22 and the wafer 2 cannot maintain the spacing 24 between the grains 23 obtained after the expansion, making it easy for the grains 23 on the expansion film 21 to collide with each other, resulting in defects such as edge chipping and scratches. Therefore, it is necessary to heat the loose expansion film 21 to shrink it and restore it to a taut state to maintain the spacing 24 between the grains 23.

[0048] Continue to refer to Figure 1 Generally speaking, the wafer 2 is constructed in a circular shape, and the wafer frame 22 is arranged around the wafer 2 and fixes the edge of the expansion film 21. Thus, in the related art, after the wafer expansion process, a heating element is usually used to heat the loose expansion film 21 in a ring shape between the wafer 2 and the wafer frame 22. The larger the size of the wafer 2, the farther the loose expansion film 21 that needs to be heated is from the center of the wafer 2 in the radial direction of the wafer 2. When the heating element is in use, the heat of the heating element may also affect the wafer 2 itself and other components arranged near the wafer 2. Therefore, a shielding plate is also needed to limit the heating range of the heating element.

[0049] Wafers 2 usually have different sizes. Taking 8-inch wafers 2 and 12-inch wafers 2 as examples, in order to be able to heat the relaxed expansion films 21 on wafers 2 of different sizes, and to be compatible with both 8-inch and 12-inch wafers 2 without changing the original structure, the positions of the heating element and the baffle plate need to be switched according to the different sizes of wafers 2, that is, the heating element and the baffle plate need to be moved along the radial direction of the wafer 2, so that the heating element and the baffle plate can be compatible with both 8-inch and 12-inch wafers 2. Specifically, when the wafer 2 is switched from 8 inches to 12 inches, the heating position needs to be moved along the radial direction of the wafer 2, toward the direction away from the center of the wafer 2, so that the heating element can correspond to the position of the expansion film 21. When the wafer 2 is switched from 12 inches to 8 inches, the heating position needs to be moved along the radial direction of the wafer 2, toward the direction close to the center of the wafer 2, so that the heating element can correspond to the position of the expansion film 21. Correspondingly, when the position of the heater changes, the position of the shielding plate also needs to change, limiting the heating range of the heater while ensuring that the shielding plate does not interfere with the normal heating of the heater. In the case where both the heater and the shielding plate are provided, when the specifications of the wafer 2 are changed, the heater and the shielding plate need to be switched separately, making the structure and use of the heater and the shielding plate more complicated, increasing equipment costs, and also affecting production efficiency.

[0050] In view of this, the present application provides a wafer processing device 1 and a wafer 2 heating device. The device, which utilizes a rotating member 121, can simultaneously drive the heating module 13 and the shielding unit 14 to move radially around the wafer 2 during a single rotation of the rotating member 121. This means that the rotational motion of the rotating member 121 can be converted into linear motion of the heating module 13 and linear motion of the shielding unit 14, respectively. When both the heating module 13 and the shielding unit 14 are provided, the heating module 13 and the shielding unit 14 can be moved in tandem. An operator can, simply by using the rotating member 121, move one of the heating module 13 and the shielding unit 14 closer to the rotating member 121 while simultaneously moving the other away from the rotating member 121. Compared with the related art, the heating module 13 and the shielding unit 14 need to be switched individually by the operator. The wafer processing device 1 of the present application, while ensuring that the expansion film 21 of wafers 2 of different sizes can be heated, the heating module 13 and the shielding unit 14 can also be switched at the same time by the rotating part 121, so that the structure in the wafer processing device 1 is more integrated and simplified, and the operator does not need to adjust the position of the heating module 13 and the shielding unit 14 individually. The use of the wafer processing device 1 is also more convenient, avoiding the impact on production efficiency.

[0051] The solution of this application will be described in detail below with reference to the accompanying drawings.

[0052] Please also refer to Figure 2 and Figure 3 ,in, Figure 2 It is a structural schematic diagram of the wafer processing device 1 disclosed in an embodiment of the present application; Figure 3 1 is a top view of a wafer processing device 1 disclosed in an embodiment of the present application. The present application discloses a wafer processing device 1 for heat-treating an expansion film 21 attached to a wafer 2. The wafer processing device 1 includes a base 11, a drive module 12, a heating module 13, and a shielding unit 14. The driving module 12 includes a rotating member 121, which is rotatably arranged on the base 11; the heating module 13 is movably arranged on the base 11 along the radial direction of the wafer 2; the shielding unit 14 is movably arranged on the base 11 along the radial direction of the wafer 2, and the shielding unit 14 is used to block the heat of the heating module 13 to limit the heating range of the heating module 13; wherein, at least one of the heating module 13 and the shielding unit 14 is connected to the rotating member 121, and the rotating member 121 is configured to synchronously drive the heating module 13 and the shielding unit 14 so that the heating module 13 and the shielding unit 14 are close to or away from the rotating member 121 along the radial direction of the wafer 2, wherein the moving directions of the heating module 13 and the shielding unit 14 are opposite.

[0053] exist Figure 2 In the figure, the heating module 13 is represented by a cube with dotted lines, which is only a schematic diagram of the position of the heating module 13 and does not represent the actual structure and size of the heating module 13. It can be understood that in the present application, the heating module 13 needs to meet the heating conditions for the expansion membrane 21. Furthermore, the present application does not limit the specific structure of the heating module 13, and any heating module 13 that can meet the heating conditions for the expansion membrane 21 can be used. It should be understood that in the present application, the heating of the expansion membrane 21 refers to heating the expansion membrane 21 of the wafer 2, that is, heating the expansion membrane 21 between the wafer frame 22 and the wafer 2.

[0054] The wafer processing device 1 of the present application, through the rotating member 121, can simultaneously drive the heating module 13 and the shielding unit 14 to move in the radial direction of the wafer 2 during a single rotation of the rotating member 121. The rotational motion of the rotating member 121 can be converted into linear motion of the heating module 13 and linear motion of the shielding unit 14. When the heating module 13 and the shielding unit 14 are both provided, the heating module 13 and the shielding unit 14 can be linked together. The operator can move one of the heating module 13 and the shielding unit 14 closer to the rotating member 121 and the other away from the rotating member 121 by simply using the rotating member 121. Compared with the related art, the heating module 13 and the shielding unit 14 need to be switched individually by the operator. The wafer processing device 1 of the present application, while ensuring that the expansion film 21 of wafers 2 of different sizes can be heated, the heating module 13 and the shielding unit 14 can also be switched at the same time by the rotating part 121, so that the structure in the wafer processing device 1 is more integrated and simplified, and the operator does not need to adjust the position of the heating module 13 and the shielding unit 14 individually. The use of the wafer processing device 1 is also more convenient, avoiding the impact on production efficiency.

[0055] When the wafer processing device 1 needs to heat the expansion film 21 of the wafer 2 with larger size, that is, when the size of the wafer 2 adapted by the wafer processing device 1 needs to be increased, for example, from adapting to an 8-inch wafer 2 to adapting to a 12-inch wafer 2, the rotating part 121 is driven to rotate at this time, and the rotating part 121 will drive the heating module 13 away from the rotating part 121 along the radial direction of the wafer 2, that is, away from the center of the circle of the wafer 2. At the same time, the shielding unit 14 will approach the rotating part 121 along the radial direction of the wafer 2, that is, close to the center of the circle of the wafer 2. In this way, the heating module 13 can heat the expansion film 21 of the wafer 2 with larger size, and the shielding unit 14 can also prevent the heat of the heating module 13 from affecting the wafer 2 itself.

[0056] When the wafer processing device 1 needs to heat the expansion film 21 of the wafer 2 with smaller size, that is, when the size of the wafer 2 adapted by the wafer processing device 1 needs to be reduced, for example, from adapting to a 12-inch wafer 2 to adapting to an 8-inch wafer 2, the rotating part 121 is driven to rotate at this time, and the rotating part 121 will drive the heating module 13 along the radial direction of the wafer 2 to approach the rotating part 121, that is, close to the center of the circle of the wafer 2. At the same time, the shielding unit 14 will move away from the rotating part 121 along the radial direction of the wafer 2, that is, away from the center of the circle of the wafer 2. In this way, the heating module 13 can heat the expansion film 21 of the wafer 2 with smaller size, and the shielding unit 14 can prevent the heat of the heating module 13 from affecting other components around the wafer 2.

[0057] The moving path of the heating module 13 can have a first position and a second position, and the shielding unit 14 can be configured as follows: when the heating module 13 moves to the first position, the shielding unit 14 moves to the second position, and when the heating module 13 moves to the second position, the shielding unit 14 moves to the first position. In this way, when the heating module 13 moves to the first position, the shielding unit 14 can move to the second position to prevent the heat of the heating module 13 located at the first position from affecting the wafer 2 within the range of the second position or other components arranged adjacent to the second position. When the heating module 13 moves to the second position, the shielding unit 14 can move to the first position to prevent the heat of the heating module 13 located at the second position from affecting the wafer 2 within the range of the first position or other components arranged adjacent to the first position.

[0058] In some embodiments, the shielding unit 14 can be located between the heating module 13 and the base 11. In this way, when the expansion film 21 is heated, the shielding unit 14 can also protect the wafer 2 and prevent the components falling from above the wafer 2 from damaging the wafer 2. Figure 4 On the moving path of the heating module 13, the base 11 has a first opening 111 and a second opening 112 spaced apart. The heat output of the heating module 13 is directed toward the base 11. The first position can correspond to the first opening 111, and the second position can correspond to the second opening 112. Taking the wafer processing apparatus 1 applied to 8-inch wafers 2 and 12-inch wafers 2 as an example, the position of the first opening 111 can correspond to the position of the expansion film 21 of the 12-inch wafer 2, and the position of the second opening 112 can correspond to the position of the expansion film 21 of the 8-inch wafer 2. In this way, the first position can correspond to the position of the expansion film 21 of the 12-inch wafer 2, and the second position can correspond to the position of the expansion film 21 of the 8-inch wafer 2. Alternatively, the position of the first opening 111 may correspond to the position of the expansion film 21 of the 8-inch wafer 2, and the position of the second opening 112 may correspond to the position of the expansion film 21 of the 12-inch wafer 2. In this way, the first position may correspond to the position of the expansion film 21 of the 8-inch wafer 2, and the second position may correspond to the position of the expansion film 21 of the 12-inch wafer 2. In this application, the first opening 111 corresponds to the position of the expansion film 21 of the 12-inch wafer 2, and the second opening 112 corresponds to the position of the expansion film 21 of the 8-inch wafer 2 as an example for explanation. Figure 4 ,exist Figure 4 In FIG, two wafers 2 are shown, wherein the upper wafer 2 is an 8-inch wafer 2 and the lower wafer 2 is a 12-inch wafer 2. It can be understood that Figure 4 The two wafers 2 shown are only for illustration to understand the positions of the first opening 111 and the second opening 112 , and do not mean that two wafers 2 are provided in the actual heating process of the expanded film 21 . Figure 4The positions of the 8-inch and 12-inch wafers 2 are shown by superimposing each other, but in actual application only a single wafer 2 is processed.

[0059] Furthermore, the shielding unit 14 can be understood as follows: when the heating module 13 moves to the first position, the shielding unit 14 shields the second opening 112; when the heating module 13 moves to the second position, the shielding unit 14 shields the first opening 111. When the heating module 13 moves to the second position and the shielding unit 14 shields the first opening 111, at this time, the heating module 13 can heat the expanded film 21 of the 8-inch wafer 2, and the shielding unit 14 moves to the outside of the wafer 2 to prevent the heat of the heating module 13 from affecting other components arranged near the wafer 2. When the heating module 13 moves to the first position and the shielding unit 14 shields the second opening 112, at this time, the heating module 13 can heat the expanded film 21 of the 12-inch wafer 2, and the shielding unit 14 moves into the wafer 2 to prevent the heat of the heating module 13 from affecting the wafer 2 itself.

[0060] In some embodiments, the driving module 12 may include a first transmission member 122, one end of which is connected to the rotating member 121, and the other end of which is connected to the heating module 13 or the shielding unit 14. For example, the first transmission member 122 is connected to the heating module 13 and the rotating member 121 respectively.

[0061] When the rotating member 121 rotates, it drives the first transmission member 122 to move. As described above, since the ends of the first transmission member 122 are rotatably connected to the rotating member 121 and the heating module 13, respectively, and the heating module 13 is movably disposed on the base 11 along the radial direction of the wafer 2, when the rotating member 121 rotates, on the one hand, the rotational motion of the rotating member 121 is converted into the swinging motion of the first transmission member 122. That is, when the rotating member 121 rotates, the first transmission member 122 swings relative to the rotating member 121 and the heating module 13. On the other hand, the rotational motion of the rotating member 121 is converted into the linear motion of the first transmission member 122 along the radial direction of the wafer 2. That is, when the rotating member 121 rotates, the rotational force of the rotating member 121 is converted into a pulling force or a pushing force on the heating module 13. In this way, the rotating member 121 can drive the heating module 13 to perform linear motion along the radial direction of the wafer 2 through the first transmission member 122, allowing the heating module 13 to move closer to or further away from the rotating member 121. In the actual application of the heating module 13, the rotation axis of the rotating part 121 can correspond to the center of the wafer 2. In this way, the heating module 13 is close to or away from the rotating part 121, which can be understood as the heating module 13 is close to or away from the center of the wafer 2.

[0062] In some embodiments, the wafer processing apparatus 1 may include a synchronization module 15 disposed on the base 11, and the heating module 13 and the shielding unit 14 are respectively connected to the synchronization module 15. The synchronization module 15 is configured to control the heating module 13 and the shielding unit 14 to move in the opposite direction in the radial direction of the wafer 2 when one of the heating module 13 and the shielding unit 14 moves in the radial direction of the wafer 2. The synchronization module 15 enables the rotary member 121 to be indirectly connected to the shielding unit 14 or the heating module 13. In this way, when the rotary member 121 drives one of the heating module 13 and the shielding unit 14 to move via the first transmission member 122, the synchronization module 15 can drive the other of the heating module 13 and the shielding unit 14 to move.

[0063] Specifically, the synchronization module 15 may include a first synchronous pulley 151, a second synchronous pulley 152, and a synchronous belt 153. The first synchronous pulley 151 and the second synchronous pulley 152 are rotatably mounted on the base 11 and spaced apart along the movement path of the heating module 13. The synchronous belt 153 is respectively mounted on the first synchronous pulley 151 and the second synchronous pulley 152 to form a first section 1531 and a second section 1532 that are oppositely disposed. The heating module 13 is connected to one of the first section 1531 and the second section 1532, and the shielding unit 14 is connected to the other of the first section 1531 and the second section 1532. In this way, the synchronous belt 153 mounted on the first synchronous pulley 151 and the second synchronous pulley 152 can form a closed loop structure. The two pulleys drive one of the first section 1531 and the second section 1532 to move linearly and force the other of the first section 1531 and the second section 1532 to move in the opposite direction. When the heating module 13 moves linearly along the radial direction of the wafer 2, the shielding unit 14 can move in the opposite direction. Figure 4 The synchronous belt 153 is formed into two sections in the vertical direction of the paper. For example, the section of the synchronous belt 153 away from the base 11 is the first section 1531, and the section of the synchronous belt 153 close to the base 11 is the second section 1532. In this case, the heating module 13 can be connected to the first section 1531, and the shielding unit 14 can be connected to the second section 1532. The heating module 13 is fixed to the first section 1531. The movement of the heating module 13 will pull the first section 1531 to move. The movement of the first section 1531 drives the second section 1532 to move in the opposite direction through the pulley.

[0064] It is understood that the first synchronous pulley 151, the second synchronous pulley 152 and the synchronous belt 153 can be mutually transmitted through gear meshing. For example, the first synchronous pulley 151 and the second synchronous pulley 152 can be gears, and correspondingly, the synchronous belt 153 can be provided with teeth. In this case, the first section 1531 and the second section 1532 can be understood as two racks. In this way, when the two synchronous pulleys rotate, the rotational motion of the gears can be converted into the linear motion of the two racks, thereby realizing transmission between the two synchronous pulleys and the synchronous belt 153. In some embodiments, the first synchronous pulley 151 and the second synchronous pulley 152 can also be sprockets, and correspondingly, the synchronous belt 153 is a chain. The synchronous belt 153 can mesh with the first synchronous pulley 151 and the second synchronous pulley 152 to realize transmission. In another embodiment, the first synchronous pulley 151 and the second synchronous pulley 152 may be rollers, and correspondingly, the synchronous belt 153 may be a belt. Friction may be used to transmit power between the synchronous belt 153 and the first synchronous pulley 151 and the second synchronous pulley 152 .

[0065] In addition to the synchronization module 15, which enables the rotating member 121 to synchronously drive the heating module 13 and the shielding unit 14, in other embodiments, the synchronization module 15 also includes a second transmission member 123, one end of the second transmission member 123 is rotatably connected to the rotating member 121, and the other end is rotatably connected to the shielding unit 14, wherein the end of the first transmission member 122 connected to the rotating member 121 and the end of the second transmission member 123 connected to the rotating member 121 are staggered on the rotating member 121, so that when the rotating member 121 rotates, it pulls one of the first transmission member 122 and the second transmission member 123, and pushes the other of the first transmission member 122 and the second transmission member 123.

[0066] When the rotating member 121 rotates, the rotating member 121 drives the second transmission member 123 to move. As described above, since the two ends of the second transmission member 123 are rotatably connected to the rotating member 121 and the shielding unit 14, respectively, and the shielding unit 14 is movably provided on the base 11 along the radial direction of the wafer 2. Based on this, when the rotating member 121 rotates, on the one hand, the rotational motion of the rotating member 121 is converted into the swinging of the second transmission member 123, that is, when the rotating member 121 rotates, the second transmission member 123 swings relative to the rotating member 121 and the shielding unit 14. On the other hand, the rotational motion of the rotating member 121 is converted into the linear motion of the second transmission member 123 along the radial direction of the wafer 2, that is, when the rotating member 121 rotates, the rotational force of the rotating member 121 is converted into a pulling force or a pushing force on the shielding unit 14.

[0067] Furthermore, one end of the first transmission member 122 connected to the rotating member 121 and one end of the second transmission member 123 connected to the rotating member 121 are staggered on the rotating member 121. In this way, when the rotating member 121 rotates, it can generate a pulling force on one of the first transmission member 122 and the second transmission member 123, so that it can approach the rotating member 121, and can also generate a thrust on the other of the first transmission member 122 and the second transmission member 123, so that it can move away from the rotating member 121. In this way, the rotating member 121 can drive the heating module 13 and the shielding unit 14 to move linearly along the radial direction of the wafer 2 through the first transmission member 122 and the second transmission member 123, and the moving directions of the heating module 13 and the shielding unit 14 are opposite. When there are multiple heating modules 13 and multiple shielding units 14, during one rotation of the rotating member 121, the rotating member 121 can make the multiple heating modules 13 approach the rotating member 121 or move away from the rotating member 121 at the same time, and can also make the multiple shielding units 14 approach the rotating member 121 or move away from the rotating member 121 at the same time.

[0068] For details, please refer to Figures 5 to 7 , Figures 5 to 7 1 is a schematic diagram of the movement of the first transmission member 122 and the second transmission member 123 disclosed in the embodiment of the present application. Figures 5 to 7 All are top-down perspectives. Figures 5 to 7 In the figure, the shielding unit 14, the heating module 13, the rotating member 121, the first transmission member 122 and the second transmission member 123 are only outlined by lines, and the shielding unit 14 is represented by a dotted outline.

[0069] by Figure 5 Taking the initial state of the wafer processing device 1 as an example, Figure 5 In the embodiment, the shielding unit 14 and the heating module 13 overlap with each other, and the shielding unit 14 is located below the heating module 13. When the wafer processing device 1 needs to heat the expansion film 21 of the 12-inch wafer 2, the heating module 13 needs to be away from the rotating member 121. At this time, the rotating member 121 can rotate along the first rotation direction. It can be understood that the first rotation direction here can be one of clockwise and counterclockwise. Figure 5 The paper direction is referenced. Figure 5 In the embodiment, the first rotation direction is clockwise. At this time, the rotating member 121 pushes the first transmission member 122 and pulls the second transmission member 123. In this way, the shielding unit 14 moves toward the rotating member 121 along the radial direction of the wafer 2, and the heating module 13 moves away from the rotating member 121 along the radial direction of the wafer 2. At this time, the state of the wafer processing device 1 changes from Figure 5 becomes Figure 6When the rotating member 121 continues to rotate along the first rotation direction, the rotating member 121 will continue to push the first transmission member 122 and continue to pull the second transmission member 123, so that the heating module 13 moves to a position where the expansion film 21 of the inch wafer 2 can be heated. This position can be the first position mentioned above. Correspondingly, the shielding unit 14 will move to the second opening 112 mentioned above. At this time, the state of the wafer processing device 1 will change from Figure 6 becomes Figure 7 .

[0070] In some embodiments, multiple heating modules 13 and shielding units 14 may be provided, respectively. These multiple heating modules 13 and shielding units 14 are respectively arranged around a rotating member 121. The rotating member 121 is configured to synchronously drive the multiple heating modules 13 and shielding units 14 to move radially relative to the wafer 2. Taking the example of a heating module 13 employing a synchronization module 15 and being connected to the rotating member 121, when there are multiple first transmission members 122 and multiple heating modules 13, during a single rotation of the rotating member 121, the rotating member 121 can simultaneously drive the multiple heating modules 13 toward or away from the rotating member 121, and can also simultaneously drive the multiple shielding units 14 toward or away from the rotating member 121. Thus, during a single rotation of the rotating member 121, the synchronization module 15 can simultaneously drive the multiple heating modules 13 toward or away from the rotating member 121, and can also simultaneously drive the multiple shielding units 14 toward or away from the rotating member 121. In this way, the rotational motion of the rotating part 121 can be converted into the linear motion of the heating module 13 and the linear motion of the shielding unit 14 respectively. When multiple shielding units 14 and multiple heating modules 13 are provided, the operator does not need to adjust the positions of the multiple heating modules 13 and the multiple shielding units 14 separately. When multiple shielding units 14 and heating modules 13 are provided, the structure in the wafer processing device 1 is more integrated and simplified, and the use of the wafer processing device 1 is also more convenient, avoiding the impact on production efficiency.

[0071] In some embodiments, the wafer processing apparatus 1 may include a mounting unit 16 movably disposed on the base 11. Figures 2 to 4For example, the mounting unit 16 can be constructed in a plate shape, and the heating module 13 is disposed on the mounting unit 16. Taking the example of the heating module 13 being connected to the rotating member 121 via the first transmission member 122, one end of the first transmission member 122 is rotatably connected to the rotating member 121, and the other end of the first transmission member 122 can be rotatably connected to the mounting unit 16. The mounting unit 16 can be constructed as a polygonal plate body, which provides a mounting space for the heating module 13. The first transmission member 122 can also be indirectly rotatably connected to the heating module 13 through the mounting unit 16. In this way, the rotating member 121 and the first transmission member 122 indirectly drive the heating module 13 to move radially of the wafer 2 through the mounting unit 16.

[0072] Specifically, the number of the heating modules 13 and the shielding unit 14 can be at least two. Optionally, in the present application, the number of the heating modules 13 and the shielding unit 14 is four. Figure 2 and Figure 3 , in the circumferential direction of the wafer 22, four heating modules 13 are spaced at equal intervals 24 and arranged around the rotating member 121, and are respectively arranged above, below, and on the left and right sides of the rotating member 121. When the rotating member 121 rotates in the first rotation direction, the rotational force of the rotating member 121 will be converted into a pulling force on the mounting unit 16 and a pushing force on the shielding unit 14, so that multiple mounting units 16 are close to the rotating member 121 at the same time, and multiple shielding units 14 are away from the rotating member 121 at the same time. When the rotating member 121 rotates in the second rotation direction, the rotational force of the rotating member 121 will be converted into a pushing force on the mounting unit 16 and a pulling force on the shielding unit 14, so that multiple mounting units 16 are away from the rotating member 121 at the same time, and multiple shielding units 14 are close to the rotating member 121 at the same time. It can be understood that the first rotation direction is one of the clockwise direction and the counterclockwise direction, the second rotation direction is the other of the clockwise direction and the counterclockwise direction, and the first rotation direction is opposite to the second rotation direction. Figure 3 The paper direction is referenced. Figure 3 , the first rotation direction is clockwise and the second rotation direction is counterclockwise.

[0073] exist Figure 3 In the figure, the mounting unit 16 and the first transmission member 122 each have two contours, one of which is a solid contour, at which time the mounting unit 16 is at a position away from the rotating member 121. The other is a dotted contour, at which time the mounting unit 16 is at a position close to the rotating member 121. When the rotating member 121 rotates in the first rotation direction, the mounting unit 16 and the first transmission member 122 can move from the position corresponding to the solid contour to the position corresponding to the dotted contour, and when the rotating member 121 rotates in the second rotation direction, the mounting unit 16 and the first transmission member 122 can move from the position corresponding to the dotted contour to the position corresponding to the solid contour. It can be understood that in Figure 3In order to facilitate the understanding of the installation unit 16 and the first transmission member 122, Figure 3 In the figure, the heating module 13 is not shown.

[0074] In some embodiments, the driving module 12 may include a driving member 17, which is configured to drive the rotating member 121 to rotate, and / or the driving member 17 is configured to drive the heating module 13 to move radially of the wafer 2 on the base 11, and / or the driving member 17 is configured to drive the shielding unit 14 to move radially of the wafer 2 on the base 11. In the case where there are multiple heating modules 13 and driving units, respectively, the driving member 17 can be configured to drive any heating module 13 and / or any shielding unit 14 to move radially of the wafer 2 on the base 11. In this way, the driving member 17 can directly or indirectly provide power to the rotating member 121, so that the rotating member 121 can synchronously drive the shielding unit 14 and the heating module 13.

[0075] When the driving member 17 drives the rotating member 121 to rotate, the rotating member 121 is the active member, the heating module 13 and the shielding unit 14 are the passive members, and the rotating member 121 actively drives the multiple heating modules 13 and the multiple shielding units 14 to switch positions. When the driving member 17 drives any heating module 13 and / or any shielding unit 14 to move radially along the wafer 2 on the base 11, the heating module 13 and / or shielding unit 14 connected to the driving member 17 is the active member, and the other heating modules 13, other shielding units 14, and the rotating member 121 are passive members. Taking the example of the driving member 17 connected to any heating module 13 as the active member, when the heating module 13 as the active member moves radially along the wafer 2, the heating module 13 as the active member will convert its own linear motion into the rotational motion of the rotating member 121, and the rotational motion of the rotating member 121 will then be converted into the linear motion of the other heating modules 13 and other shielding units 14.

[0076] Taking the rotating member 121 as an active member, in some embodiments, the driving member 17 may be a handle 171 provided on the rotating member 121, and the base 11 is provided with a first avoidance hole 113 for avoiding the handle 171, and the handle 171 extends toward the first avoidance hole 113 and extends outside the first avoidance hole 113. Figure 9 In this way, the operator can manually drive the handle 171 to manually drive the rotating member 121 to rotate, thereby switching the position of the heating module 13. This method of manually switching the position of the heating module 13 is suitable for scenarios where the switching frequency is not high. In other embodiments, when the switching frequency is high, the driving member 17 can be a drive motor connected to the rotating member 121. The operator can remotely control the drive motor to control the rotation of the rotating member 121, which is suitable for scenarios where the switching frequency is high.

[0077] Taking the heating module 13 as an active component as an example, in some embodiments, the driving component 17 can be a telescopic cylinder connected to the heating module 13, the telescopic cylinder is arranged on the base 11, and the telescopic cylinder has a telescopic rod extending along the radial direction of the wafer 2, and one section of the telescopic rod is connected to the heating module 13. In this way, when the telescopic rod is extended or retracted, it can drive the heating module 13 to move in a straight line. Furthermore, the cylinder body of the telescopic cylinder can be arranged on the side of the telescopic rod close to the rotating component 121, so that when the telescopic rod is retracted, the heating module 13 will be close to the rotating component 121, and when the telescopic rod is extended, the heating module 13 will be away from the rotating component 121. In addition to the telescopic cylinder, the driving component 17 can also be a driving motor, a screw and a nut seat. The output shaft of the driving motor drives the screw to rotate, and the nut seat is sleeved on the screw and connected to the rotating component 121, which can also realize that the heating module 13 acts as an active component and moves in the radial direction of the wafer 2.

[0078] It should be noted that when the driving member 17 drives the rotating member 121 to rotate, that is, when the rotating member 121 is the active member, in addition to the above-mentioned implementation of the driving member 17, the driving member 17 can also include other feasible embodiments, as long as it is ensured that the driving member 17 can drive the rotating member 121 to rotate, this application does not make specific restrictions on this. Correspondingly, when the driving member 17 drives any heating module 13 and / or any shielding unit 14 to move radially along the wafer 2 on the base 11, that is, when the heating module 13 and / or the shielding unit 14 is the active member, this application does not make specific restrictions on the implementation of the driving member 17, and it is sufficient to ensure that the driving member 17 can drive any heating module 13 to move radially along the wafer 2 on the base 11. It should be noted that in order to facilitate the understanding of this application, in this application, the part involving the rotation of the rotating member 121, unless otherwise specified, is understood and explained as if the driving member 17 drives the rotating member 121 to rotate, that is, the rotating member 121 is the active member.

[0079] In the case where the wafer processing device 1 includes a mounting unit 16, in some embodiments, a plurality of first mounting rods 114 and a plurality of second mounting rods 115 may be provided on the base 11, and the first mounting rods 114 and the second mounting rods 115 extend radially along the wafer 2 respectively; the plurality of first mounting rods 114 are arranged in parallel and at intervals, and are located on the left and right sides of the moving direction of the heating module 13, and the heating module 13 is slidably mounted on the first mounting rods 114; the plurality of second mounting rods 115 are arranged in parallel and at intervals, and are located on the left and right sides of the moving direction of the shielding unit 14, and the shielding unit 14 is slidably mounted on the second mounting rods 115. For details, please refer to Figure 8 , Figure 8 yes Figure 2In the enlarged view of section A, the multiple parallel first mounting rods 114 form a guide rail structure, effectively constraining the movement trajectory of the heating module 13, preventing lateral shifting and shaking of the heating module 13, and ensuring the stability of the heating module 13 during movement. Similarly, the multiple parallel second mounting rods 115 also form a guide rail structure, effectively constraining the movement trajectory of the shielding unit 14, preventing lateral shifting and shaking of the shielding unit 14, and ensuring the stability of the shielding unit 14 during movement.

[0080] As described above, when the base 11 is provided with the first mounting rod 114, the second mounting rod 115 and the synchronization module 15, the wafer processing device 1 may further include a first connecting platform 3 and a second connecting platform 31 connected to the heating module 13 and the shielding unit 14, respectively. The first connecting platform 3 is used to connect to the synchronization belt 153, and the second connecting platform 31 is used to connect to the corresponding mounting rod. When the mounting unit 16 is provided, the first connecting platform 3 and the second connecting platform 31 may be indirectly connected to the heating module 13 through the mounting unit 16. In some embodiments, the first connecting platform 3 and the second connecting platform 31 may also be connected to each other. Figure 8 , the mounting rod is close to the heating module 13 and the shielding unit 14, and the synchronization module 15 is away from the heating module 13 and the shielding unit 14. At this time, the second connecting platform 31 can be directly connected to the heating module 13 and the shielding unit 14, and the first connecting platform 3 is set on the second connecting platform 31 and connected to the synchronization belt 153 in the synchronization module 15.

[0081] In some embodiments, the base 11 may be provided with a bearing seat 117 and a bearing 116 sleeved on the bearing seat 117. The rotating member 121 is constructed in an annular shape and sleeved on the bearing 116, so that the rotating member 121 can be rotatably provided on the base 11. Figure 9 , Figure 9 This is a schematic diagram of the structure of the synchronization module 15 disclosed in an embodiment of the present application. The bearing 116 and bearing seat 117 ensure that the rotating member 121 can be rotatably disposed on the base 11 while minimizing friction during rotation of the rotating member 121. The rotating member 121 may be provided with a shaft 1211, and a plurality of first transmission members 122 are rotatably mounted on the shaft 1211, so that the first transmission members 122 can be rotatably connected to the annular rotating member 121.

[0082] In some embodiments, the wafer processing device 1 may further include a locking module 18, as further described in Figure 9The locking module 18 includes a latch 181, a plurality of locking plates 182, and a latch seat 183. The plurality of locking plates 182 are respectively arranged on the base 11 and are arranged around the rotating member 121. The locking plates 182 have a first positioning hole 1821. The latch seat 183 is connected to the rotating member 121 and has a second positioning hole 1831. The base 11 has a second avoidance hole 118 for avoiding the latch 181. The latch 181 is configured to pass through the second avoidance hole 118, the second positioning hole 1831, and the first positioning hole 1821 in sequence to lock the rotation angle of the rotating member 121. The locking module 18 can lock the rotating member 121 to prevent it from rotating when the position of the heating module 13 does not need to be changed. This prevents the heating module 13 from shifting while heating the expansion membrane 21, thereby ensuring the stability of the heating module 13 during use. The latch 181 can be connected to the locking plate 182 from the side of the base 11 away from the first transmission member 122. The latch 181 can first pass through the second avoidance hole 118, and then pass through the first positioning hole 1821 and the second positioning hole 1831 to prevent the first transmission member 122 from blocking the second positioning hole 1831 on the latch seat 183, making it difficult to install the latch 181. Figure 9 The latch seat 183 can also be partially accommodated in the second avoidance hole 118, utilizing the size of the base 11 itself, making the locking module 18 and the base 11 more compact. Figure 9 In the figure, the latch 181 has two outlines, one of which is a solid line outline. At this time, the latch 181 is inserted into the first positioning hole 1821 and the rotation angle of the rotating member 121 is fixed; the other is a dotted line outline. At this time, the latch 181 is not inserted into the first positioning hole 1821 and the rotation angle of the rotating member 121 is not fixed.

[0083] Specifically, taking the wafer processing device 1 applied to 8-inch wafer 2 and 12-inch wafer 2 as an example, when the heating module 13 moves to the position corresponding to the expansion membrane 21 of the 8-inch wafer 2, the pin 181 can pass through the second avoidance hole 118, the second positioning hole 1831 and the first positioning hole 1821 on the pin seat 183 in sequence. In this way, the position of the rotating part 121 is locked, and the wafer processing device 1 is fixed in the position for heating the expansion membrane 21 of the 8-inch wafer 2. When it is necessary to heat the expansion film 21 of the 12-inch wafer 2, the pin 181 can be pulled out first, the rotating part 121 can be rotated, and the heating module 13 can be moved to the position corresponding to the expansion film 21 of the 12-inch wafer 2. At this time, the pin 181 can be passed through the second avoidance hole 118, the second positioning hole 1831 and the first positioning hole 1821 on the other pin seat 183 in sequence. In this way, the position of the rotating part 121 is locked again, and the wafer processing device 1 is fixed in the position for heating the expansion film 21 of the 12-inch wafer 2.

[0084] The wafer processing apparatus 1 may further include a position detection module 19, which includes a detection sensor 191. The detection sensor 191 is configured to emit a signal indicating the radial position of the heating module 13 relative to the wafer 2. The signal from the detection sensor 191 allows an operator to determine the position of the heating module 13 and control the movement or stopping of the heating module 13.

[0085] In some embodiments, the position detection module 19 may further include a trigger unit 192, which may be specifically referred to in Figure 10 , Figure 10 yes Figure 2 An enlarged view of portion B in the figure; the detection sensor 191 is disposed on the base 11, and the trigger unit 192 is disposed on the heating module 13 and faces the detection sensor 191. The trigger unit 192 is configured such that when the trigger unit 192 passes by the detection sensor 191, the detection sensor 191 emits a signal. As described above, in the case where the wafer processing apparatus 1 is provided with the mounting unit 16, the trigger unit 192 can be disposed on the mounting unit 16. In the present application, one or more position detection modules 19 can be provided, and the multiple position detection modules 19 correspond to the multiple heating modules 13, respectively.

[0086] Taking the wafer processing device 1 applied to 8-inch wafer 2 and 12-inch wafer 2 as an example, the trigger part 192 can be configured as follows: when the heating module 13 moves to the position corresponding to the expansion membrane 21 of the 8-inch wafer 2 or the 12-inch wafer 2, the trigger part 192 passes through the detection sensor 191, causing the detection sensor 191 to send a signal. In this way, when the detection sensor 191 sends a signal, it indicates that the heating module 13 has been switched to the corresponding position at this time. The operator can stop the rotation of the rotating part 121 and fix the rotating part 121 to fix the position of the heating module 13.

[0087] The position detection module 19 may further include a mounting rail 193 extending along the movement path of the mounting unit 16. A plurality of detection sensors 191 are provided and slidably disposed on the mounting rail 193, so that the positions of the plurality of detection sensors 191 can be adjusted, and the positions at which the detection sensors 191 send signals can be adjusted. This further increases the applicability of the wafer processing apparatus 1. For example, the detection sensor 191 may send a signal when the heating module 13 moves to the position of the expansion film 21 for an 8-inch wafer 2 or a 10-inch wafer 2, or when the heating module 13 moves to the position of the expansion film 21 for an 8-inch or 12-inch wafer 2; or further, when the heating module 13 moves to the position of the expansion film 21 for a 10-inch or 12-inch wafer 2.

[0088] In some embodiments, the detection sensor 191 may be an optical sensor that can emit a light signal, and the trigger portion 192 may be a reflector that reflects the light signal. When the trigger portion 192 passes through the detection sensor 191 and the detection sensor 191 receives the reflected light signal, the detection sensor 191 is triggered and emits a corresponding signal. In other embodiments, in addition to optical sensors, an acoustic wave sensor that can emit sound waves may also be used. The trigger portion 192 may be a reflector that can emit sound wave signals. When the detection sensor 191 receives the sound wave signal reflected by the trigger portion 192, the position information of the trigger portion 192 can be obtained to obtain the position of the installation unit 16. In addition to the two embodiments mentioned above, the detection sensor 191 and the corresponding trigger portion 192 can also be designed as other feasible embodiments, and this application does not make specific limitations on this.

[0089] On the other hand, the present application also provides a heating device for heat treating an expansion film 21 on a wafer 2, wherein the edge of the expansion film 21 is fixed to a wafer frame 22. The heating device includes a heat expansion plate, a wafer processing device 1, and a drive device. The heat expansion plate is used to support the expansion film 21. The wafer processing device 1 is a wafer processing device 1 as described above and has all of its beneficial effects, which are not described in detail here. The drive device is connected to the base 11 and is used to drive the base 11 to rotate, thereby driving the multiple heating modules 13 to move along the circumference of the wafer 2.

[0090] Taking the heating device as an example, when heating the expanded film 21 of a 12-inch wafer 2, the latch 181 of the locking module 18 can sequentially penetrate the second avoidance hole 118, the second positioning hole 1831, and the first positioning hole 1821 of the locking plate 182 to fix the rotation angle of the rotating member 121, while maintaining the positions of the heating module 13 and the shielding unit 14. At this point, the heating module 13 can be in the first position, which corresponds to the position of the expanded film 21 of the 12-inch wafer 2. Correspondingly, the shielding unit 14 is in the second opening 112.

[0091] When it is necessary to process the 8-inch wafer 2, the latch 181 must be pulled out first to release the locking state of the rotating member 121, and then the rotating member 121 must be rotated by the driving module 12. As described above, the operator can manually drive the rotating member 121 to rotate by means of the handle 171. In this way, the multiple first transmission members 122 will respectively pull the multiple heating modules 13 so that the multiple heating modules 13 can approach the rotating member 121, that is, so that the multiple heating modules 13 are simultaneously close to the center of the wafer 2. Furthermore, through the synchronization module 15 or the second transmission member 123, the shielding unit 14 can move in the opposite direction to the heating module 13, that is, move in a direction away from the rotating member 121. When the heating module 13 moves a certain distance, the detection sensor 191 in the position detection module 19 can be triggered to send a signal that the heating module 13 has moved into position. At this time, the heating module 13 moves from the first position to the second position, and the second position corresponds to the position of the expansion film 21 of the 8-inch wafer 2. Correspondingly, the shielding unit 14 moves from the second opening 112 to the first opening 111. By detecting the signal of the sensor 191, the operator can stop the movement of the heating module 13 and the shielding unit 14. The pin 181 in the locking module 18 can be sequentially passed through the second avoidance hole 118, the second positioning hole 1831 and the first positioning hole 1821 on the other locking plate 182 to fix the rotation angle of the rotating part 121, so that the heating equipment can heat the expansion film 21 of the 8-inch wafer 2. Through the above process, the heating equipment can be compatible with both 8-inch and 12-inch wafers 2 and heat the expansion film 21 on the wafer 2.

[0092] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit them. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some or all of the technical features therein. These modifications or replacements do not deviate the essence of the corresponding technical solutions from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A wafer processing device, characterized in that: The wafer processing device (1) is used for heat-treating an expansion film (21) attached to a wafer (2), and the wafer processing device (1) comprises: base (11); A driving module (12) comprising a rotating member (121), wherein the rotating member (121) is rotatably disposed on the base (11); a heating module (13), the heating module (13) being movably arranged on the base (11) along the radial direction of the wafer (2); and a shielding unit (14), the shielding unit (14) being movably arranged on the base (11) along the radial direction of the wafer (2), the shielding unit (14) being used to shield the heat of the heating module (13) so as to limit the heating range of the heating module (13); At least one of the heating module (13) and the shielding unit (14) is connected to the rotating member (121), and the rotating member (121) is configured to synchronously drive the heating module (13) and the shielding unit (14) so that the heating module (13) and the shielding unit (14) move closer to or farther away from the rotating member (121) along the radial direction of the wafer (2), wherein the moving directions of the heating module (13) and the shielding unit (14) are opposite.

2. The wafer processing device according to claim 1, wherein: The heating module (13) has a first position and a second position on its moving path, The shielding unit (14) is configured such that when the heating module (13) moves to the first position, the shielding unit (14) moves to the second position; and when the heating module (13) moves to the second position, the shielding unit (14) moves to the first position.

3. The wafer processing device according to claim 1, wherein: The driving module (12) comprises a first transmission member (122), one end of the first transmission member (122) is connected to the rotating member (121), and the other end is connected to the heating module (13) or the shielding unit (14).

4. The wafer processing device according to claim 3, wherein: The wafer processing device (1) includes a synchronization module (15) arranged on the base (11), the heating module (13) and the shielding unit (14) are respectively connected to the synchronization module (15), and the synchronization module (15) is configured to control the heating module (13) and the shielding unit (14) to move in the opposite direction in the radial direction of the wafer (2) when one of the heating module (13) and the shielding unit (14) moves in the radial direction of the wafer (2).

5. The wafer processing device according to claim 4, wherein: The synchronization module (15) comprises a first synchronization pulley (151), a second synchronization pulley (152) and a synchronization belt (153), wherein the first synchronization pulley (151) and the second synchronization pulley (152) are rotatably arranged on the base (11) and are spaced apart on the moving path of the heating module (13); The synchronous belt (153) is respectively mounted on the first synchronous pulley (151) and the second synchronous pulley (152) to form a first section (1531) and a second section (1532) that are relatively arranged; the heating module (13) is connected to one of the first section (1531) and the second section (1532); and the shielding unit (14) is connected to the other of the first section (1531) and the second section (1532).

6. The wafer processing device according to claim 3, wherein: The driving module (12) comprises a second transmission member (123), one end of the second transmission member (123) is connected to the rotating member (121), and the other end is connected to the shielding unit (14); Wherein, one end of the second transmission member (123) connected to the rotating member (121) and one end of the first transmission member (122) connected to the rotating member (121) are staggered in the circumferential direction of the rotating member (121), so that when the rotating member (121) rotates, it pulls one of the first transmission member (122) and the second transmission member (123) and pushes the other of the first transmission member (122) and the second transmission member (123).

7. The wafer processing device according to claim 1, wherein: The base (11) is provided with a bearing seat (117) and a bearing (116) sleeved outside the bearing seat (117); the rotating member (121) is constructed in an annular shape and sleeved on the bearing (116), so that the rotating member (121) can be rotatably arranged on the base (11).

8. The wafer processing device according to any one of claims 1 to 7, characterized in that: The wafer processing device (1) further includes a driving member (17), wherein: The driving member (17) is configured to drive the rotating member (121) to rotate, and / or, The driving member (17) is configured to drive the heating module (13) to move along the radial direction of the wafer (2) on the base (11), and / or, The driving member (17) is configured to drive the shielding unit (14) to move on the base (11) along the radial direction of the wafer (2).

9. The wafer processing device according to claim 1, wherein: The heating modules (13) and the shielding units (14) are respectively provided in plurality, and the plurality of heating modules (13) and the plurality of shielding units (14) are respectively arranged around the rotating member (121) and connected to the rotating member (121), and the rotating member (121) is configured to synchronously drive the plurality of heating modules (13) and the shielding units (14) to move in the radial direction of the wafer (2).

10. A wafer processing equipment, characterized in that: The wafer processing equipment is used to perform heat treatment on an expansion film (21) attached to the wafer (2), wherein the edge of the expansion film (21) is fixed on a wafer frame (22), and the wafer processing equipment comprises: a thermal expansion plate for carrying the expansion film (21); The wafer processing apparatus (1) according to any one of claims 1 to 9; and A driving device is connected to the base (11) and is used to drive the base (11) to rotate.

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