Material annealing equipment and material annealing process

Abstract

The invention relates to the technical field of semiconductor manufacturing, in particular to material annealing equipment and a material annealing process, and the material annealing equipment comprises an annealing chamber, a thermal radiation source and a sample table; the annealing chamber is internally provided with an annealing cavity, the sample table is arranged at the bottom in the annealing cavity, the sample table is used for bearing a substrate to be annealed, and the thermal radiation source is arranged in the annealing cavity and faces the sample table to radiate and heat the substrate; a cooling part for reducing the surface temperature of the sample table is arranged in the sample table; the substrate is irradiated through the thermal radiation source to be rapidly heated, then the sample table is cooled through the cooling component, the substrate is rapidly cooled, the annealing efficiency is improved, the annealing time is shortened, and the problems that in the prior art, a material heating table annealing process usually needs long time and high temperature, the annealing efficiency is low, the material exposure time is long, and the annealing time is short are solved. And meanwhile, the temperature difference between the upper surface and the lower surface of the substrate is increased, the crystallization time is prolonged, and the annealing quality is improved.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor manufacturing, and in particular to a material annealing device and a material annealing process. Background Art

[0002] Semiconductors are materials with electrical conductivity between conductors and insulators at room temperature. They are widely used in integrated circuits, communications systems, photovoltaic power generation, lighting, high-power power conversion, and other fields. Annealing plays a key role in semiconductor manufacturing, primarily used to improve material properties, repair defects, manipulate electrical characteristics, and optimize device structures.

[0003] Existing material annealing equipment generally has an annealing cavity with an annealing table in the cavity. The material to be heated is placed on the annealing table and heated by a light source or a plasma source. The material is cooled on the annealing table to complete the annealing process.

[0004] However, existing material hot-stage annealing processes usually require a long time and high temperature, resulting in low annealing efficiency. In addition, the material exposure time can easily cause component contamination, affecting component yield. Summary of the Invention

[0005] The purpose of the present invention is to provide a material annealing device and a material annealing process to solve the technical problems in the prior art that the material hot plate annealing process usually requires a long time and high temperature, has low annealing efficiency, and has a long material exposure time, which easily causes sample contamination and affects the yield.

[0006] In a first aspect, the present invention provides a material annealing device comprising an annealing chamber, a thermal radiation source, and a sample stage; The annealing chamber has an annealing cavity, the sample stage is arranged at the bottom of the annealing cavity, the sample stage is used to support the substrate to be annealed, the heat radiation source is arranged in the annealing cavity, and the heat radiation source is arranged towards the sample stage to radiate and heat the substrate; The sample stage has a cooling component therein for reducing the surface temperature of the sample stage.

[0007] Furthermore, the cooling component includes a water cooling pipeline and an oil cooling pipeline; The water cooling pipeline is evenly coiled in the sample stage, and both ends of the water cooling pipeline are respectively connected to a cold water source; And / or, the cooling component further includes an oil cooling pipeline, the oil cooling pipeline is evenly coiled in the sample stage, and both ends of the oil cooling pipeline are respectively connected to an oil cooling source.

[0008] Furthermore, the material annealing equipment further comprises an atmosphere pipeline, an atmosphere source, a vacuum pump and a vacuum pipeline; One end of the atmosphere pipeline extends into the annealing cavity, and the other end of the atmosphere pipeline is connected to the atmosphere source to introduce gas into the annealing cavity. One end of the vacuum pipeline extends into the annealing cavity, and the other end of the vacuum pipeline is connected to the vacuum pump.

[0009] Furthermore, the material annealing equipment further comprises an air distribution device, which is arranged between the atmosphere pipeline and the atmosphere source, and comprises a pressure stabilizing chamber, a diverter pipe and an air distribution plate; The atmosphere source is connected to the air inlet of the pressure-stabilizing chamber. The pressure-stabilizing chamber is hollow. One end of the diverter tube extends into the pressure-stabilizing chamber. A plurality of air inlet holes are provided on the diverter tube to connect the diverter tube with the pressure-stabilizing chamber. The other end of the diverter tube is connected to the atmosphere pipeline. The air equalizing plate is provided at one end of the diverter tube close to the atmosphere pipeline.

[0010] Furthermore, the air distribution device further includes a plurality of air inlet branches; One end of the air inlet branch is connected to the air inlet of the pressure stabilizing chamber respectively, and the other end of each air inlet branch is connected to one of the atmosphere sources.

[0011] Furthermore, the material annealing equipment further includes a lifting assembly; The lifting assembly is arranged at the top of the annealing cavity, the heat radiation source is arranged at the bottom of the lifting assembly, and the lifting assembly is configured to be able to drive the heat radiation source to rise and fall.

[0012] Furthermore, the material annealing equipment further comprises an exhaust fan and an exhaust pipeline; A plurality of ventilation holes are provided on the top of the annealing chamber. The ventilation holes are connected to one end of the exhaust pipe, and the other end of the exhaust pipe is connected to the outside. A closing valve is provided on the exhaust pipe, and the exhaust fan is provided in the ventilation holes.

[0013] In a second aspect, a material annealing process, using the above-mentioned material annealing equipment, comprises the following steps: Step 1: Place the substrate to be annealed on the sample stage and seal the annealing cavity; Step 2: evacuating the annealing cavity through a vacuum line; Step 3: introducing annealing atmosphere into the vacuum annealing cavity through the atmosphere pipeline; Step 4: turning on the thermal radiation source to heat the substrate on the sample stage; Step 5: Turn off the heat radiation source, start the cooling component, and gradually cool the substrate.

[0014] Furthermore, after the annealing cavity is evacuated, an annealing atmosphere is introduced into the annealing cavity through an atmosphere pipeline.

[0015] Furthermore, when the substrate on the sample stage is heated at a constant temperature, the lifting component is driven according to the temperature to adjust the distance between the heat radiation source and the sample stage.

[0016] Furthermore, starting the cooling component to gradually cool the substrate includes: Cooling oil is introduced into the oil cooling pipeline. After the substrate is cooled to a specified temperature, cooling water is introduced into the water cooling pipeline. The temperature of the cooling oil is higher than the temperature of the cooling water.

[0017] Compared with the prior art, the present invention provides a material annealing equipment comprising an annealing chamber, a heat radiation source and a sample stage; the annealing chamber is provided with an annealing cavity, the sample stage is arranged at the bottom of the annealing cavity, the sample stage is used to carry a substrate to be annealed, the heat radiation source is arranged in the annealing cavity, and the heat radiation source is arranged toward the sample stage to radiate and heat the substrate; the sample stage is provided with a cooling component for reducing the surface temperature of the sample stage; the substrate is irradiated by the heat radiation source to rapidly heat the substrate, and then the sample stage is cooled by the cooling component, so that the substrate can be quickly cooled, the annealing efficiency is improved, and the annealing time is reduced, which solves the technical problems in the prior art that the material hot stage annealing process usually requires a long time and a high temperature, has low annealing efficiency, and has a long material exposure time, which easily causes sample contamination and affects the yield, while improving the temperature difference between the upper and lower surfaces of the substrate, increasing the crystallization time, and improving the annealing quality. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] In order to more clearly illustrate the specific embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the specific embodiments or the description of the prior art. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0019] Figure 1 A schematic diagram of the overall structure of the material annealing equipment provided in an embodiment of the present invention; Figure 2 A structural cross-sectional view of a sample stage in a material annealing device provided in an embodiment of the present invention; Figure 3 This is a structural cross-sectional view of the gas distribution device in the material annealing equipment provided by an embodiment of the present invention.

[0020] Reference numerals: 100. Annealing chamber; 110. Annealing cavity; 200, thermal radiation source; 300, sample stage; 310. Cooling components; 311. Water cooling pipeline; 312. Oil cooling pipeline; 410, atmosphere pipeline; 420, atmosphere source; 430, gas distribution device; 431, pressure stabilizing chamber; 432, diverter pipe; 433, gas equalizing plate; 434, air inlet branch; 500, lifting assembly; 600. Exhaust fan. DETAILED DESCRIPTION

[0021] To make the objectives, technical solutions, and advantages of the embodiments of the present invention more clear, the technical solutions of the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Generally, the components of the embodiments of the present invention described and shown in the drawings herein can be arranged and designed in various different configurations.

[0022] Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the invention as claimed, but rather merely represents selected embodiments of the present invention. All other embodiments derived by persons of ordinary skill in the art based on the embodiments of the present invention without creative effort shall fall within the scope of protection of the present invention.

[0023] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, it does not need to be further defined or explained in subsequent drawings.

[0024] In the description of the present invention, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," "outer," and the like, indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings, or are the orientations or positional relationships in which the product of the application is typically placed when in use. These terms are intended solely to facilitate the description of the present invention and to simplify the description, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, be constructed, or operate in a specific orientation. Therefore, they should not be construed as limitations on the present invention. Furthermore, the terms "first," "second," "third," and the like are used solely to distinguish descriptions and should not be construed as indicating or implying relative importance.

[0025] Furthermore, terms such as "horizontal," "vertical," and "overhanging" do not necessarily imply that a component must be absolutely horizontal or overhanging, but rather that it can be slightly tilted. For example, "horizontal" simply means that its direction is more horizontal than "vertical," and does not mean that the structure must be completely horizontal, but rather that it can be slightly tilted.

[0026] In the description of the present invention, it should also be noted that, unless otherwise expressly specified or limited, the terms "disposed," "installed," "connected," and "connected" should be understood in a broad sense. For example, they may refer to fixed connections, detachable connections, or integral connections; they may refer to mechanical connections or electrical connections; they may refer to direct connections or indirect connections through an intermediate medium; and they may refer to internal communication between two components. Those skilled in the art will understand the specific meanings of the above terms in the present invention based on the specific circumstances.

[0027] The following embodiments of the present invention are described in detail with reference to the accompanying drawings. In the absence of conflict, the following embodiments and features in the embodiments may be combined with each other.

[0028] Example 1 like Figures 1 to 3 As shown, an embodiment of the present invention provides a material annealing device, including an annealing chamber 100, a thermal radiation source 200 and a sample stage 300; the annealing chamber 100 has an annealing cavity 110, the sample stage 300 is arranged at the bottom of the annealing cavity 110, the sample stage 300 is used to carry a substrate to be annealed, the thermal radiation source 200 is arranged in the annealing cavity 110, and the thermal radiation source 200 is arranged toward the sample stage 300 to radiate and heat the substrate; the sample stage 300 has a cooling component 310 for reducing the surface temperature of the sample stage 300.

[0029] That is, the embodiment of the present invention provides a material annealing device, which irradiates the substrate with a thermal radiation source 200 to rapidly heat the substrate, and then cools the sample stage 300 through a cooling component 310, so that the substrate can be quickly cooled, thereby improving the annealing efficiency and reducing the annealing time. This solves the technical problems in the prior art that the material hot stage annealing process usually requires a long time and a high temperature, has low annealing efficiency, and is prone to component contamination during the material exposure time, thereby affecting the component yield. At the same time, the temperature difference between the upper and lower surfaces of the substrate is increased, the crystallization time is increased, and the annealing quality is improved.

[0030] Specifically, in this embodiment, the material annealing equipment is primarily used in the photovoltaic field, for example, for annealing materials such as crystalline silicon, perovskite, and nickel oxide compounds, particularly for annealing NiOx nickel oxide compounds supported on glass substrates. In this embodiment, the annealing chamber 100 is specifically configured as a square cabinet made of metal and tempered glass. A square annealing cavity 110 is provided within the annealing chamber 100. A sample stage 300 is fixed to the bottom of the annealing cavity 110. The sample stage 300 is generally square in shape and has a flat upper surface, making it convenient for supporting the substrates to be annealed. During annealing, multiple substrates are evenly arranged on the sample stage 300. A thermal radiation source 200 is mounted at the top of the annealing cavity, facing the sample stage 300. In this embodiment, the thermal radiation source 200 is configured as a heating lamp, capable of irradiating the substrates on the sample stage 300 at a constant temperature. Heating the substrates by irradiating them with the heating lamps offers the advantages of faster temperature rise and higher annealing temperatures, effectively avoiding heat loss. A cooling assembly is located within sample stage 300. This assembly may include cooling lines connected to an external cooling source. These lines are embedded within sample stage 300 and, by introducing refrigerant, lower the surface temperature of sample stage 300, thereby rapidly cooling the substrate and achieving rapid annealing of the material. Furthermore, because sample stage 300 is located below the substrate and thermal radiation source 200 is located above it, a significant temperature difference between the upper and lower surfaces of the substrate can be achieved during annealing, thereby increasing the annealing crystallization time and improving annealing quality.

[0031] Furthermore, the cooling component 310 includes a water cooling pipeline 311; the water cooling pipeline 311 is evenly coiled in the sample table 300, and the two ends of the water cooling pipeline 311 are respectively connected to the cold water source; and / or, the cooling component 310 also includes an oil cooling pipeline 312, the oil cooling pipeline 312 is evenly coiled in the sample table 300, and the two ends of the oil cooling pipeline 312 are respectively connected to the oil cooling source.

[0032] Specifically, in the photovoltaic field, the annealing of materials such as crystalline silicon, perovskite, and nickel oxide compounds is carried by a glass substrate. When the temperature difference between the upper and lower surfaces of the glass substrate is too large, it will cause direct cracking, thereby causing damage to the substrate. In this embodiment, the cooling component 310 includes two parts: a water-cooling pipeline 311 and an oil-cooling pipeline 312. The water-cooling pipeline 311 is arranged in a "snake" shape and is wound inside the sample stage 300. Its two ends are connected to the cold water source through pipelines, thereby realizing cold water circulation inside the sample stage 300. The oil-cooling pipeline 312 is also arranged in a "snake" shape and is wound inside the sample stage 300. Its two ends are connected to the oil cooling source through pipelines, thereby realizing oil circulation inside the sample stage 300. When cooling the substrate, it is necessary to first open the oil cooling line 312 to circulate hot oil within the sample stage 300 for initial cooling of the substrate. Then, the oil cooling line 312 is closed and the water cooling line 311 is opened to circulate cold water within the sample stage 300 for further cooling. This allows the substrate to be cooled in a gradient manner using both the water cooling line 311 and the oil cooling line 312, avoiding damage to the substrate caused by direct water cooling and improving annealing efficiency.

[0033] Furthermore, the material annealing equipment also includes an atmosphere pipeline 410, an atmosphere source 420, a vacuum pump and a vacuum pipeline; one end of the atmosphere pipeline 410 extends into the annealing cavity 110, and the other end of the atmosphere pipeline 410 is connected to the atmosphere source 420 to introduce gas into the annealing cavity 110, one end of the vacuum pipeline extends into the annealing cavity 110, and the other end of the vacuum pipeline is connected to the vacuum pump.

[0034] Specifically, a vacuum line is provided on the sidewall or floor of the annealing chamber 100, with one end extending into the annealing cavity 110 and the other end connected to a vacuum pump via a line. Thus, the annealing cavity can be evacuated by the vacuum pump, thereby enabling the material to be annealed in a vacuum environment. An atmosphere line 410 is provided on the sidewall or floor of the annealing chamber 100, with one end extending into the annealing cavity 110 and the other end connected to an atmosphere source 420 via a line, thereby introducing different atmospheres, such as nitrogen or oxygen, into the annealing cavity to regulate the gas composition in the cavity, thereby affecting the properties of the semiconductor material.

[0035] Furthermore, the material annealing equipment also includes an air distribution device 430, which is arranged between the atmosphere pipeline 410 and the atmosphere source 420, and the air distribution device 430 includes a pressure stabilizing chamber 431, a diverter pipe 432 and an air equalizing plate 433; the atmosphere source 420 is connected to the air inlet of the pressure stabilizing chamber 431, the pressure stabilizing chamber 431 is hollow, one end of the diverter pipe 432 extends into the pressure stabilizing chamber 431, and a plurality of air inlet holes are provided on the diverter pipe 432 to connect the diverter pipe 432 with the pressure stabilizing chamber 431, and the other end of the diverter pipe 432 is connected to the atmosphere pipeline 410, and the air equalizing plate 433 is arranged at one end of the diverter pipe 432 close to the atmosphere pipeline 410.

[0036] Specifically, the pressure stabilizing chamber is configured as a cylindrical or rectangular cavity. The cylindrical shape is more evenly stressed and is relatively easy to manufacture; the rectangular shape may have a higher space utilization rate. In order to ensure rapid pressure equalization, the length of the pressure stabilizing chamber is slightly smaller than the diameter. The atmosphere source is connected to the air inlet of the pressure stabilizing chamber, and the air inlet of the pressure stabilizing chamber is configured to be conical and contracted, thereby helping to guide the gas into the pressure stabilizing chamber smoothly and reduce eddies and impacts. A rectifier grid may also be provided at the air inlet to break up large-scale eddies and make the flow velocity distribution more uniform. In this embodiment, two equalizing flow tubes are provided, and a plurality of air inlet holes are provided on the equalizing flow tube, so that the diverter tube is connected to the pressure stabilizing chamber. The gas from the atmosphere source enters the pressure stabilizing chamber from the air inlet, and enters the diverter tube from the air inlet hole of the diverter tube. The other end of the diverter tube is connected to the atmosphere pipeline, that is, the gas enters the atmosphere pipeline through the pressure stabilizing chamber and the diverter tube. In this embodiment, the air balancing plate is configured as a circular plate with multiple small holes, which is fixed in the diversion pipe. By providing the air balancing plate, uneven flow at different air inlet holes can be compensated.

[0037] Preferably, the air distribution device further includes a plurality of air inlet branches; one end of the air inlet branch 413 is respectively connected to the air inlet of the pressure stabilizing chamber, and the other end of each air inlet branch 413 is connected to an atmosphere source 420.

[0038] Specifically, each air inlet branch 413 is connected to an atmosphere source 420, with a separate valve and flow meter between each air inlet branch 413 and the corresponding atmosphere source 420. All air inlet branches 413 are connected to the air inlet of the pressure stabilization chamber. This allows the corresponding atmosphere content to be set according to the process. After being uniformly mixed in the pressure stabilization chamber through the corresponding air inlet branch 413, it is then transported to the annealing chamber 110 through the atmosphere pipeline, precisely controlling the atmosphere within the annealing chamber and regulating the properties of the material to be annealed.

[0039] Furthermore, the material annealing equipment also includes a lifting assembly 500; the lifting assembly 500 is arranged at the top of the annealing cavity 110, and the thermal radiation source 200 is arranged at the bottom of the lifting assembly 500, and the lifting assembly 500 is configured to drive the thermal radiation source 200 to rise and fall.

[0040] Specifically, in this embodiment, the lifting assembly 500 is configured with an electric push rod as the power component, which is driven by a motor to extend and retract the electric push rod. A fixed plate is provided at the bottom of the lifting assembly 500, which is connected to the top plate of the annealing chamber 100 via bolts. The electric push rod is arranged vertically downward, and the thermal radiation source 200 is fixed to the telescopic end of the electric push rod, thereby rising and falling with the extension and retraction of the electric push rod. As a result, the height of the thermal radiation source 200 can be adjusted through the lifting assembly 500, thereby adjusting the distance between the thermal radiation source 200 and the substrate on the sample stage 300, and adjusting the heating efficiency of the thermal radiation source 200 in real time, thereby achieving the purpose of maintaining a constant temperature of the substrate.

[0041] Furthermore, the material annealing equipment also includes an exhaust fan 600 and an exhaust duct; a plurality of ventilation holes are provided on the top of the annealing chamber 100, the ventilation holes are connected to one end of the exhaust duct, and the other end of the exhaust duct is connected to the outside world. A closing valve is provided on the exhaust duct, and the exhaust fan 600 is provided in the ventilation holes.

[0042] Specifically, the top of the annealing chamber 100 is provided with a plurality of ventilation holes. In this embodiment, there are four ventilation holes. The ventilation holes are connected to one end of the exhaust pipe, the other end of which is connected to the outside world. An exhaust fan 600 is disposed in the ventilation holes. Thus, the exhaust fan 600 can exhaust the atmosphere within the annealing cavity 110 to facilitate the removal or arrangement of substrates by personnel. A sealing valve is provided on the exhaust pipe to ensure that the exhaust pipe is normally closed, so that the annealing cavity 110 can be evacuated or the atmosphere can be arranged.

[0043] Example 2 The present invention also provides a material annealing process, which uses the material annealing equipment in the above embodiment and includes the following steps: Step 1: Place the substrate to be annealed on the sample stage 300 and seal the annealing cavity 110; Step 2: evacuate the annealing cavity 110 through a vacuum line; Step 3: introducing annealing atmosphere into the vacuum annealing cavity 110 through the atmosphere pipe 410; Step 4: Turn on the thermal radiation source 200 to heat the substrate on the sample stage 300; Step 5: Turn off the heat radiation source 200 and start the cooling component 310 to gradually cool the substrate.

[0044] Specifically, the present embodiment provides a material annealing process. First, the annealing chamber 100 can be opened by opening the closed door to open the annealing cavity 110. The substrate carrying the material to be annealed is placed on the sample stage 300, and then the annealing cavity 110 is closed. According to the annealing requirements of the material, process parameters such as the annealing temperature, the temperature duration of each stage, and the cavity pressure are set. The breaker valve of the vacuum line is opened, and the annealing cavity 110 is evacuated by a vacuum pump. After the pressure in the antechamber reaches a preset value, in order to ensure that the atmosphere in the annealing cavity 110 can be properly adjusted, after evacuation, nitrogen or oxygen, etc., is introduced into the pressure stabilizing chamber through the various inlet branches 413 and the atmosphere source 420 according to the required atmosphere environment. After mixing, it is introduced into the annealing cavity 110, thereby regulating the gas composition in the cavity, thereby affecting the properties of the semiconductor material and achieving a better annealing effect. The thermal radiation source 200 is turned on to heat the substrate on the sample stage 300. After the substrate is heated to a preset temperature, the heat radiation source 200 is adjusted to maintain a constant substrate temperature. Finally, after maintaining the constant temperature for a preset time, the heat radiation source 200 is turned off, and the cooling component 310 is activated. The oil cooling pipe 312 and water cooling system in the cooling component 310 are sequentially operated, thereby achieving a gradient cooling of the substrate and achieving rapid cooling and annealing of the material.

[0045] Furthermore, when the substrate on the sample stage 300 is heated at a constant temperature, the lifting assembly 500 is driven according to the temperature to adjust the distance between the thermal radiation source 200 and the sample stage 300 .

[0046] Specifically, when the substrate on the sample stage 300 needs to be heated at a constant temperature, the heating efficiency of the thermal radiation source 200 needs to be adjusted. By extending and retracting the lifting assembly 500, the height of the thermal radiation source 200 can be adjusted, and then the distance between the thermal radiation source 200 and the sample stage 300 can be adjusted, thereby adjusting the heating efficiency of the thermal radiation source 200 and realizing constant temperature control of the substrate.

[0047] Furthermore, the cooling component 310 is started to cool the substrate in a gradient manner, including: introducing cooling oil into the oil cooling pipe 312, and after the substrate is cooled to a specified temperature, introducing cooling water into the water cooling pipe 311, wherein the temperature of the cooling oil is higher than the temperature of the cooling water.

[0048] Specifically, when the substrate is cooled, it is necessary to first open the oil cooling line 312, circulate hot oil in the sample stage 300, and perform preliminary cooling of the substrate. Then, the oil cooling line 312 is closed, and the water cooling line 311 is opened to circulate cold water in the sample stage 300 to further cool the substrate. In this way, the substrate can be gradually cooled by the two cooling lines of the water cooling line 311 and the oil cooling line 312, thereby avoiding damage to the substrate caused by direct water cooling of the substrate and improving the annealing efficiency. In other embodiments of the present application, after the temperature of the circulating cooling oil is lowered, the water cooling line 311 can be directly opened to circulate cold water in the sample stage 300, and the two can be cooled simultaneously to further improve the cooling efficiency.

[0049] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the above embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the above embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A material annealing device, characterized in that: It includes an annealing chamber (100), a thermal radiation source (200) and a sample stage (300); The annealing chamber (100) has an annealing cavity (110), the sample stage (300) is arranged at the bottom of the annealing cavity (110), and the sample stage (300) is used to carry a substrate to be annealed. The heat radiation source (200) is arranged in the annealing cavity (110), and the heat radiation source (200) is arranged toward the sample stage (300) to radiate and heat the substrate. The sample stage (300) has a cooling component (310) therein for reducing the surface temperature of the sample stage (300).

2. The material annealing equipment according to claim 1, characterized in that: The cooling component (310) includes a water cooling pipeline (311); The water cooling pipeline (311) is evenly coiled in the sample stage (300), and both ends of the water cooling pipeline (311) are respectively connected to a cold water source; And / or, the cooling component (310) further includes an oil cooling pipeline (312), the oil cooling pipeline (312) is evenly coiled inside the sample stage (300), and both ends of the oil cooling pipeline (312) are respectively connected to an oil cooling source.

3. The material annealing equipment according to claim 1, characterized in that: The material annealing equipment further includes an atmosphere pipeline (410), an atmosphere source (420), a vacuum pump and a vacuum pipeline; One end of the atmosphere pipeline (410) extends into the annealing cavity (110), and the other end of the atmosphere pipeline (410) is connected to the atmosphere source (420) to introduce gas into the annealing cavity (110). One end of the vacuum pipeline extends into the annealing cavity (110), and the other end of the vacuum pipeline is connected to the vacuum pump.

4. The material annealing equipment according to claim 3, characterized in that: The material annealing equipment further includes an air distribution device (430), the air distribution device (430) is arranged between the atmosphere pipeline (410) and the atmosphere source (420), and the air distribution device (430) includes a pressure stabilizing chamber (431), a diverter pipe (432) and an air distribution plate (433); The atmosphere source (420) is connected to the air inlet of the pressure-stabilizing chamber (431); the pressure-stabilizing chamber (431) is hollow; one end of the diverter tube (432) extends into the pressure-stabilizing chamber (431); a plurality of air inlet holes are provided on the diverter tube (432) so that the diverter tube (432) is in communication with the pressure-stabilizing chamber (431); the other end of the diverter tube (432) is in communication with the atmosphere pipeline (410); and the air equalizing plate (433) is provided at one end of the diverter tube (432) close to the atmosphere pipeline (410).

5. The material annealing equipment according to claim 4, characterized in that: The air distribution device further includes a plurality of air inlet branches (413); One end of the air inlet branch (413) is connected to the air inlet of the pressure stabilizing chamber (431), and the other end of each air inlet branch (413) is connected to one of the atmosphere sources (420).

6. The material annealing equipment according to any one of claims 1 to 5, characterized in that: The material annealing equipment further includes a lifting assembly (500); The lifting assembly (500) is arranged at the top of the annealing cavity (110), the heat radiation source (200) is arranged at the bottom of the lifting assembly (500), and the lifting assembly (500) is configured to be able to drive the heat radiation source (200) to rise and fall.

7. The material annealing equipment according to any one of claims 1 to 5, characterized in that: The material annealing equipment further includes an exhaust fan (600) and an exhaust pipeline; The top of the annealing chamber (100) is provided with a plurality of ventilation holes, the ventilation holes are connected to one end of the exhaust pipe, the other end of the exhaust pipe is connected to the outside, a closing valve is provided on the exhaust pipe, and the exhaust fan (600) is provided in the ventilation holes.

8. A material annealing process, using the material annealing equipment according to any one of claims 1 to 7, characterized in that: The following steps are involved: Step 1: placing the substrate to be annealed on the sample stage (300) and sealing the annealing cavity (110); Step 2: evacuating the annealing cavity (110) through a vacuum line; Step 3: introducing annealing atmosphere into the vacuum annealing cavity (110) through the atmosphere pipeline (410); Step 4: Turn on the thermal radiation source (200) to heat the substrate on the sample stage (300); Step 5: Turn off the heat radiation source (200), start the cooling component (310), and gradually cool the substrate.

9. The material annealing process according to claim 8, characterized in that: When the substrate on the sample stage (300) is heated at a constant temperature, the lifting component (500) is driven according to the temperature to adjust the distance between the thermal radiation source (200) and the sample stage (300).

10. The material annealing process according to claim 9, characterized in that: Starting the cooling component (310) to gradually cool the substrate comprises: Cooling oil is introduced into the oil cooling pipeline (312), and after the substrate is cooled to a specified temperature, cooling water is introduced into the water cooling pipeline (311), wherein the temperature of the cooling oil is higher than the temperature of the cooling water.

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