Measuring method and measuring device for measuring size of metal plate, and method for manufacturing

Abstract

The invention relates to a method and an apparatus for measuring the size of a metal plate, and a method for manufacturing a mask. The method for measuring the size of the metal plate may comprise: an arrangement step for arranging the metal plate such that the metal plate overlaps the support surface of the stage in plan view; a suction step for generating electric power for sucking the metal plate to the support surface; and a measurement step for measuring the size of the metal plate.

Description

Technical Field

[0001] Embodiments of the present disclosure relate to a method and apparatus for measuring the dimensions of a metal plate, and a method for manufacturing a mask. Background Art

[0002] In electronic devices such as smartphones and tablet PCs, the market demands high-definition display devices having, for example, a pixel density of 400 ppi or higher or 800 ppi or higher.

[0003] Organic EL display devices have attracted attention due to their good responsiveness, low power consumption and high contrast. As a method for forming components of an organic EL display device such as pixels and electrodes on a substrate, a vapor deposition method is known. In the vapor deposition method, a mask device is used. The mask device includes a mask including a plurality of through holes and a frame supporting the mask. The material passing through the plurality of through holes is attached to the substrate, thereby forming a layer constituting pixels, electrodes, etc. on the substrate. The accuracy of the shape and position of the layer formed on the substrate is affected by the accuracy of the shape and position of the through holes of the mask.

[0004] Prior art literature

[0005] Patent Literature

[0006] Patent Document 1: International Publication No. 2019 / 049600 Summary of the Invention

[0007] Problems to be solved by the invention

[0008] The metal plate constituting the mask may include a partially warped portion, which can hinder accurate mask inspection.

[0009] Means for solving problems

[0010] A method for measuring the size of a metal plate according to one embodiment of the present disclosure may include: a configuration step of configuring the metal plate so that the metal plate overlaps with a support surface of a workbench when viewed from above; an attraction step of generating electric power to attract the metal plate toward the support surface; and a measurement step of measuring the size of the metal plate.

[0011] Effects of the Invention

[0012] According to the present disclosure, the dimensions of a metal plate can be measured more accurately. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 This is a cross-sectional view showing an example of an organic device.

[0014] Figure 2 This is a plan view showing an example of an organic device group.

[0015] Figure 3 This is a cross-sectional view showing an example of a vapor deposition device.

[0016] Figure 4 It is a top view showing an example of a mask device.

[0017] Figure 5 It is a top view showing an example of a mask.

[0018] Figure 6 It is a cross-sectional view showing an example of a mask.

[0019] Figure 7 This is a diagram showing an example of a rolling process of a rolled base material.

[0020] Figure 8 It is a diagram showing a processing step of forming a plurality of through holes in a metal plate.

[0021] Figure 9 This is a diagram showing an example of a mask having local warpage.

[0022] Figure 10 This is a diagram showing an example of a mask having local warpage.

[0023] Figure 11 This is a diagram showing an example of a mask having local warpage.

[0024] Figure 12 This is a diagram showing an example of a measuring device.

[0025] Figure 13 This is a cross-sectional view showing an example of a suction device.

[0026] Figure 14 This is a diagram showing an example of a measuring device.

[0027] Figure 15 This is a cross-sectional view showing an example of a suction device. DETAILED DESCRIPTION

[0028] In this specification and the drawings, unless otherwise specified, terms such as "substrate", "base material", "plate", "sheet", and "film" indicating a material serving as the basis of a certain structure are not distinguished from each other merely by difference in name.

[0029] In this specification and the drawings, unless otherwise specified, terms such as "parallel" and "orthogonal" that specify shapes and geometric conditions and their degrees, or values of lengths and angles, are not limited to strict meanings, but are interpreted within a range that includes the degree to which the same function can be expected.

[0030] In this specification and the drawings, unless otherwise specified, when a structure, such as a component or region, is referred to as being "above" or "below," "on the upper side," or "below," or "above" or "below" another component or region, or other structure, this includes situations where the structure is in direct contact with the other structure. Furthermore, this includes situations where another structure is between the other structure, i.e., situations where the structure is in indirect contact with the other structure. Unless otherwise specified, the terms "above," "upper side," or "above," or "lower," "lower side," or "below" may be used with the up-down direction reversed.

[0031] In this specification and the drawings, unless otherwise specified, identical or similar reference numerals are assigned to identical parts or parts having identical functions, and duplicate descriptions thereof are omitted. Dimensional ratios in the drawings may differ from actual ratios, or portions of the structure may be omitted from the drawings for ease of explanation.

[0032] In this specification and the drawings, unless otherwise specified, one embodiment of this specification can be combined with other embodiments within the scope of no contradiction. Other embodiments can also be combined with each other within the scope of no contradiction.

[0033] In this specification and the drawings, unless otherwise specified, when a method such as a manufacturing method discloses multiple steps, other undisclosed steps may be performed between the disclosed steps. The order of the disclosed steps is arbitrary within the scope of no contradiction.

[0034] In this specification and the drawings, unless otherwise specified, ranges expressed using symbols such as "to" include the numerical values placed before and after the symbol. For example, the numerical range defined by the expression "34 to 38 mass %" is the same as the numerical range defined by the expression "34 mass % or more and 38 mass % or less."

[0035] In one embodiment of this specification, an example is described in which a mask is used to form an organic material or electrode on a substrate when manufacturing an organic EL display device. However, the use of the mask is not particularly limited, and this embodiment can be applied to masks for various purposes. For example, the mask of this embodiment can also be used to form a component of a device for displaying or projecting images and videos for expressing virtual reality, so-called VR, or augmented reality, so-called AR. For example, the mask of this embodiment can also be used to form a component of a display device other than an organic EL display device, such as an electrode of a liquid crystal display device. For example, the mask of this embodiment can also be used to form a component of a device other than a display device, such as an electrode of a pressure sensor.

[0036] A first aspect of the present disclosure is a measuring method for measuring the dimensions of a metal plate, the measuring method comprising:

[0037] an arrangement step of arranging the metal plate so that the metal plate overlaps the support surface of the workbench when viewed from above;

[0038] an attraction step of generating electricity to attract the metal plate toward the support surface; and

[0039] In the measuring step, the dimensions of the metal plate are measured.

[0040] A second aspect of the present disclosure may include the following aspect in the measurement method of the first aspect: the metal plate may constitute a mask, and the mask may include: a first end portion and a second end portion that are opposed to each other in the first direction; and a middle portion located between the first end portion and the second end portion and having a plurality of through holes formed therein.

[0041] A third aspect of the present disclosure may include the following aspect in the measuring method of the first or second aspect: the measuring step may include: a first measuring step of measuring a dimension of the metal plate in the first direction; and a second measuring step of measuring a dimension of the metal plate in a second direction perpendicular to the first direction.

[0042] A fourth aspect of the present disclosure may include the following aspects in the measuring method of the second aspect: Each of the plurality of through holes may have a size of 50 μm or less.

[0043] A fifth aspect of the present disclosure may include the following aspect in the measuring method of any one of the first to fourth aspects: The metal plate may have a thickness of 30 μm or less.

[0044] A sixth aspect of the present disclosure may include the following aspect in the measuring method of any one of the first to fifth aspects: The electric force may be Coulomb force or Johnson-Rabbec force.

[0045] The seventh aspect of the present disclosure may include the following aspects in the measuring method of the sixth aspect: The stage may be composed of an electrostatic chuck.

[0046] The eighth aspect of the present disclosure may include the following aspects in the measuring method of the sixth aspect: The attracting step may include: a charging step of charging the metal plate; and a step of attracting the charged metal plate toward the supporting surface using a conductor.

[0047] A ninth aspect of the present disclosure may include the following aspect in the measuring method of the eighth aspect: The charging step may be performed using a charging rod positioned above the metal plate and intersecting the metal plate in a plan view.

[0048] A tenth aspect of the present disclosure may include the following aspect in the measuring method of any one of the first to ninth aspects: The measuring step may include an observation step of observing the metal plate using a camera located above the metal plate.

[0049] The eleventh aspect of the present disclosure may include the following aspect in the measuring method of the tenth aspect: The observation step may include a step of detecting positions of a plurality of marks on the surface of the metal plate.

[0050] The twelfth aspect of the present disclosure may include the following aspect in the measuring method of any one of the first to eleventh aspects: The metal plate may be disposed on a glass plate.

[0051] The 13th aspect of the present disclosure may include the following aspects in the measuring method of the 12th aspect: The glass plate may have a thickness of 100 μm or more and 2000 μm or less.

[0052] A fourteenth aspect of the present disclosure is a method for manufacturing a mask, comprising:

[0053] The process of preparing metal sheets;

[0054] forming a plurality of through holes in the metal plate;

[0055] a step of cutting out the metal plate portion having the through-hole formed therein to obtain the mask; and

[0056] A step of measuring the dimensions of the mask using the measuring method of any one of the first to thirteenth aspects.

[0057] A fifteenth aspect of the present disclosure is a measuring device for measuring the dimensions of a metal plate, comprising:

[0058] a workbench comprising a support surface on which the metal plates overlap when viewed from above;

[0059] an attraction device that generates electricity to attract the metal plate toward the support surface; and

[0060] An observation device is provided for observing the metal plate.

[0061] According to a sixteenth aspect of the present disclosure, the measuring device according to the fifteenth aspect may include the following aspect: The suction device may include an electrostatic chuck functioning as the stage.

[0062] The seventeenth aspect of the present disclosure may include the following aspect in the measuring device of the fifteenth aspect: The attraction device may include a charging device for charging the metal plate and a conductor for attracting the charged metal plate toward the support surface.

[0063] According to an eighteenth aspect of the present disclosure, the measuring device according to the seventeenth aspect may include the following aspect: The charging device may include a charging rod located above the metal plate and intersecting the metal plate in a plan view.

[0064] A nineteenth aspect of the present disclosure may include the following aspect in the measuring device of any one of the fifteenth to eighteenth aspects: The observation device may include a camera located above the metal plate.

[0065] A nineteenth aspect of the present disclosure may include the following aspect in the measuring device of any one of the fifteenth to nineteenth aspects: The measuring device may include a glass plate that supports the metal plate.

[0066] One embodiment of the present disclosure will be described in detail with reference to the accompanying drawings. The embodiment described below is an example of the embodiment of the present disclosure, and the present disclosure is not to be construed as being limited to only these embodiments.

[0067] An organic device 100 including elements formed by using a mask will be described. Figure 1 1 is a cross-sectional view showing an example of the organic device 100 .

[0068] Organic device 100 includes a substrate 110 having a first surface 111 and a second surface 112, and a plurality of elements 115 located on first surface 111 of substrate 110. Elements 115 are, for example, pixels. Elements 115 may be arranged along the in-plane direction of first surface 111. Substrate 110 may include two or more types of elements 115. For example, substrate 110 may include a first element 115A and a second element 115B. Although not shown, substrate 110 may include a third element. First element 115A, second element 115B, and third element may be, for example, a red pixel, a blue pixel, and a green pixel.

[0069] The element 115 may include a first electrode 120, an organic layer 130 located on the first electrode 120, and a second electrode 140 located on the organic layer 130. The element formed using a mask may be the organic layer 130 or the second electrode 140. The element formed using a mask is also called a vapor-deposition layer.

[0070] The organic device 100 may include an insulating layer 160 located between two adjacent first electrodes 120 in a plan view. The insulating layer 160 may include, for example, polyimide. The insulating layer 160 may overlap with an end of the first electrode 120 in a plan view.

[0071] The organic device 100 may be an active matrix device. For example, although not shown, the organic device 100 may include switches electrically connected to each of the plurality of elements 115. The switches are, for example, transistors. The switches can control the on / off switching of the voltage or current to the corresponding element 115.

[0072] The substrate 110 can be an insulating plate-shaped member. The substrate 110 is preferably transparent, allowing light to pass through. Examples of materials for the substrate 110 include rigid, inflexible materials such as quartz glass, PYREX (registered trademark) glass, and synthetic quartz plates, as well as flexible materials such as resin films, optical resin plates, and thin glass. Alternatively, the substrate can be a laminate having a barrier layer on one or both sides of a resin film.

[0073] Element 115 is configured so as to achieve a certain function by applying a voltage between first electrode 120 and second electrode 140 or by flowing a current between first electrode 120 and second electrode 140. For example, if element 115 is a pixel of an organic EL display device, element 115 can emit light that forms an image.

[0074] The first electrode 120 includes a conductive material. For example, the first electrode 120 includes a metal, a conductive metal oxide, or another conductive inorganic material. The first electrode 120 may include a transparent and conductive metal oxide such as indium tin oxide (ITO) or indium zinc oxide (IZO).

[0075] Organic layer 130 comprises an organic material. When current flows through organic layer 130, organic layer 130 can exhibit certain functions. Examples of organic layer 130 include a light-emitting layer that emits light when current flows. Organic layer 130 can also comprise an organic semiconductor material. Properties such as the transmittance and refractive index of organic layer 130 can be adjusted as appropriate.

[0076] like Figure 1 As shown, organic layer 130 may include a first organic layer 130A and a second organic layer 130B. First organic layer 130A is contained in first element 115A. Second organic layer 130B is contained in second element 115B. Although not shown, organic layer 130 may also include a third organic layer contained in a third element. First organic layer 130A, second organic layer 130B, and third organic layer may be, for example, a red light-emitting layer, a blue light-emitting layer, and a green light-emitting layer.

[0077] When voltage is applied between the first electrode 120 and the second electrode 140, current flows through the organic layer 130. When the organic layer 130 is a light-emitting layer, light is emitted from the organic layer 130 and extracted to the outside from the second electrode 140 side or the first electrode 120 side.

[0078] The organic layer 130 may further include a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, a charge generation layer, and the like.

[0079] The second electrode 140 includes a conductive material such as a metal. The second electrode 140 is formed on the organic layer 130 by an evaporation method using a mask. As materials constituting the second electrode 140, platinum, gold, silver, copper, iron, tin, chromium, aluminum, indium, lithium, sodium, potassium, calcium, magnesium, indium tin oxide (ITO), indium zinc oxide (IZO), carbon, etc. can be used. These materials can be used alone or in combination of two or more. When using two or more, layers consisting of each material can be stacked. In addition, alloys containing two or more materials can also be used. For example, magnesium alloys such as MgAg, aluminum alloys such as AlLi, AlCa, and AlMg can be used. MgAg is also called magnesium silver. Magnesium silver is preferably used as the material of the second electrode 140. Alkali metal and alkaline earth metal alloys can also be used. For example, lithium fluoride, sodium fluoride, potassium fluoride, etc. can be used.

[0080] The second electrode 140 may be a common electrode. For example, the second electrode 140 of one element 115 may be electrically connected to the second electrode 140 of another element 115 .

[0081] The second electrode 140 may be composed of a single layer. For example, the second electrode 140 may be a layer formed by a vapor deposition process using a single mask.

[0082] Or, as Figure 1 As shown, the second electrode 140 may include a first layer 140A and a second layer 140B. The first layer 140A may be formed by a vapor deposition process using a first mask. The second layer 140B may be formed by a vapor deposition process using a second mask. In this way, the second electrode 140 can be formed using two or more masks. This increases the degree of freedom in the patterning of the second electrode 140 when viewed from above. For example, the organic device 100 may include a region where the second electrode 140 is not present when viewed from above. The region where the second electrode 140 is not present may have a higher transmittance than the region where the second electrode 140 is present.

[0083] like Figure 1 As shown, the end of the first layer 140A and the end of the second layer 140B may partially overlap, thereby electrically connecting the first layer 140A and the second layer 140B.

[0084] Although not shown, the second electrode 140 may include another layer such as a third layer. The other layer such as the third layer may be electrically connected to the first layer 140A and the second layer 140B.

[0085] In the following description, when describing the common structure of the first layer 140A, the second layer 140B, the third layer, etc. in the configuration of the second electrode 140 , the term and symbol “second electrode 140 ” are used.

[0086] In the method for manufacturing the organic device 100, it is possible to make Figure 2 An organic device group 102 is shown. The organic device group 102 includes two or more organic devices 100. For example, the organic device group 102 may include organic devices 100 arranged in a first direction D1 and a second direction D2. The second direction D2 intersects the first direction D1. The second direction D2 may also be orthogonal to the first direction D1. The two or more organic devices 100 may share a single substrate 110. For example, the organic device group 102 may be located on a single substrate 110 and include layers such as the first electrode 120, the organic layer 130, and the second electrode 140 that constitute the two or more organic devices 100. The organic devices 100 are obtained by dividing the organic device group 102.

[0087] As will be described later, the first direction D1 may be a direction in which a mask for manufacturing the organic device 100 extends.

[0088] The dimension A1 of the organic device 100 in the first direction D1 can be, for example, 10 mm or more, 30 mm or more, or 100 mm or more. The dimension A1 can be, for example, 200 mm or less, 500 mm or less, or 1000 mm or less. The range of the dimension A1 can be defined by a first group consisting of 10 mm, 30 mm, and 100 mm and / or a second group consisting of 200 mm, 500 mm, and 1000 mm. The range of the dimension A1 can be defined by a combination of any one of the values included in the first group and any one of the values included in the second group. The range of the dimension A1 can be defined by a combination of any two of the values included in the first group. The range of the dimension A1 can be defined by a combination of any two of the values included in the second group. For example, size A1 can be greater than 10 mm and less than 1000 mm, greater than 10 mm and less than 500 mm, greater than 10 mm and less than 200 mm, greater than 10 mm and less than 100 mm, greater than 10 mm and less than 30 mm, greater than 30 mm and less than 1000 mm, greater than 30 mm and less than 500 mm, greater than 30 mm and less than 200 mm, greater than 30 mm and less than 100 mm, greater than 100 mm and less than 1000 mm, greater than 100 mm and less than 500 mm, greater than 100 mm and less than 200 mm, greater than 200 mm and less than 1000 mm, greater than 200 mm and less than 500 mm, or greater than 500 mm and less than 1000 mm.

[0089] The dimension A2 of the organic device 100 in the second direction D2 can be, for example, 10 mm or more, 20 mm or more, or 50 mm or more. The dimension A2 can be, for example, 100 mm or less, 200 mm or less, or 500 mm or less. The range of the dimension A2 can be defined by the first group consisting of 10 mm, 20 mm, and 50 mm and / or the second group consisting of 100 mm, 200 mm, and 500 mm. The range of the dimension A2 can be defined by a combination of any one of the values included in the first group and any one of the values included in the second group. The range of the dimension A2 can be defined by a combination of any two of the values included in the first group. The range of the dimension A2 can be defined by a combination of any two of the values included in the second group. For example, the size A2 can be greater than 10 mm and less than 500 mm, greater than 10 mm and less than 200 mm, greater than 10 mm and less than 100 mm, greater than 10 mm and less than 50 mm, greater than 10 mm and less than 20 mm, greater than 20 mm and less than 500 mm, greater than 20 mm and less than 200 mm, greater than 20 mm and less than 100 mm, greater than 20 mm and less than 50 mm, greater than 50 mm and less than 500 mm, greater than 50 mm and less than 200 mm, greater than 50 mm and less than 100 mm, greater than 100 mm and less than 500 mm, greater than 100 mm and less than 200 mm, or greater than 200 mm and less than 500 mm.

[0090] The organic device group 102 includes a device region 103 where a plurality of organic devices 100 are located. The device region 103 has a size G12 in the first direction D1 and a size G22 in the second direction D2.

[0091] By increasing the size of the substrate 110, the dimensions G12 and G22 of the device region 103 can be increased. This increases the number of organic devices 100 formed on one substrate 110. This reduces the manufacturing cost of the organic device 100.

[0092] The dimension G11 of the substrate 110 in the first direction D1 may be, for example, greater than 1000 mm, greater than 1200 mm, greater than 1300 mm, or greater than 2100 mm. The dimension G11 may be, for example, less than 1200 mm, less than 1300 mm, less than 1900 mm, less than 2100 mm, or less than 2300 mm. The range of the dimension G11 may be defined by the first group consisting of 1000 mm, 1200 mm, 1300 mm, and 2100 mm and / or the second group consisting of 1200 mm, 1300 mm, 1900 mm, 2100 mm, and 2300 mm. The range of the dimension G11 may be defined by a combination of any one of the values included in the first group and any one of the values included in the second group. The range of the dimension G11 may be defined by a combination of any two of the values included in the first group. The range of the dimension G11 can be defined by a combination of any two of the values included in the above-mentioned Group 2. For example, the dimension G11 may be greater than or equal to 1000 mm and less than or equal to 2300 mm, greater than or equal to 1000 mm and less than or equal to 2100 mm, greater than or equal to 1000 mm and less than or equal to 1900 mm, greater than or equal to 1000 mm and less than or equal to 1300 mm, greater than or equal to 1000 mm and less than or equal to 1200 mm, greater than or equal to 1200 mm and less than or equal to 2300 mm, greater than or equal to 1200 mm and less than or equal to 2100 mm, greater than or equal to 1200 mm and less than or equal to 1300 mm, greater than or equal to 1300 mm and less than or equal to 2300 mm, greater than or equal to 1300 mm and less than or equal to 2100 mm, greater than or equal to 1300 mm and less than or equal to 1900 mm, greater than or equal to 1900 mm and less than or equal to 2300 mm, greater than or equal to 1900 mm and less than or equal to 2100 mm, or greater than or equal to 2300 mm.

[0093] The dimension G21 of the substrate 110 in the second direction D2 may be, for example, greater than 1200 mm, greater than 1300 mm, greater than 1500 mm, greater than 2000 mm, or greater than 2400 mm. The dimension G21 may be, for example, less than 1300 mm, less than 2300 mm, less than 2400 mm, or less than 2600 mm. The range of the dimension G21 may be defined by the first group consisting of 1200 mm, 1300 mm, 1500 mm, 2000 mm, and 2400 mm and / or the second group consisting of 1300 mm, 2300 mm, 2400 mm, and 2600 mm. The range of the dimension G21 may be defined by a combination of any one of the values included in the first group and any one of the values included in the second group. The range of the dimension G21 may be defined by a combination of any two of the values included in the first group. The range of the dimension G21 can be defined by a combination of any two of the values included in the second group described above. For example, the dimension G21 may be greater than 1200 mm and less than 2600 mm, greater than 1200 mm and less than 2400 mm, greater than 1200 mm and less than 2300 mm, greater than 1200 mm and less than 1500 mm, greater than 1200 mm and less than 1300 mm, greater than 1300 mm and less than 2600 mm, greater than 1300 mm and less than 2400 mm, greater than 1300 mm and less than 2300 mm, greater than 1300 mm and less than 1500 mm, greater than 1500 mm and less than 2600 mm, greater than 1500 mm and less than 2400 mm, greater than 1500 mm and less than 2300 mm, greater than 2000 mm and less than 2300 mm, greater than 2300 mm and less than 2600 mm, greater than 2300 mm and less than 2400 mm, or greater than 2400 mm and less than 2600 mm.

[0094] The specific numerical range of dimension G11 and the specific numerical range of dimension G21 can be combined. For example, dimension G11 may be between 1000 mm and 1200 mm, and dimension G21 may be between 1200 mm and 1300 mm. For example, dimension G11 may be between 1200 mm and 1300 mm, and dimension G21 may be between 2000 mm and 2300 mm. For example, dimension G11 may be between 2100 mm and 2300 mm, and dimension G21 may be between 2400 mm and 2600 mm.

[0095] Next, a method of forming elements such as the organic layer 130 and the second electrode 140 by a vapor deposition method using a mask will be described.

[0096] The vapor deposition method performed using mask 50 can be physical vapor deposition or chemical vapor deposition. Examples of physical vapor deposition include vacuum vapor deposition, ion plating, and sputtering. In both physical and chemical vapor deposition methods, a vapor deposition layer is formed at locations on the object that overlap with the through-holes of mask 50. The object is, for example, a substrate.

[0097] Figure 3 1 is a diagram showing an example of a vapor deposition device 10. The vapor deposition device 10 performs a vapor deposition process to deposit a vapor deposition material onto a substrate 110. Figure 3 In the illustrated example, the vapor deposition apparatus 10 performs vacuum vapor deposition.

[0098] like Figure 3 As shown, the evaporation device 10 may include a evaporation source 6, a heater 8, and a mask device 15 therein. The evaporation device 10 may also include an exhaust unit for creating a vacuum atmosphere within the evaporation device 10. The evaporation source 6 is, for example, a crucible. The evaporation source 6 contains a evaporation material 7 such as an organic material or a metal material. The heater 8 heats the evaporation source 6, causing the evaporation material 7 to evaporate in a vacuum atmosphere.

[0099] like Figure 3 As shown, the mask device 15 includes at least one mask 50. The mask device 15 may include a frame 40 that supports the mask 50. The frame 40 includes an opening 45. The mask 50 may extend so as to cross the opening 45 when viewed from above. The mask 50 is fixed to the frame 40. The frame 40 may include: a first frame surface 401 to which the mask 50 is fixed; and a second frame surface 402 located opposite to the first frame surface 401. The frame 40 may support the mask 50 in a stretched state in the direction of its surface to prevent the mask 50 from bending.

[0100] like Figure 3 As shown, the mask device 15 is arranged in the vapor deposition device 10 so that the mask 50 is opposite to the first surface 111 of the substrate 110. The mask 50 includes a plurality of through holes 56 for allowing the vapor deposition material 7 flying from the vapor deposition source 6 to pass. In the following description, the surface of the mask 50 facing the substrate 110 is referred to as the first surface 61. The surface of the mask 50 located on the opposite side of the first surface 61 is referred to as the second surface 62. A portion of the second surface 62 faces the first surface 401 of the frame.

[0101] like Figure 3 As shown, the evaporation device 10 may include a substrate rack 2 for holding a substrate 110. The substrate rack 2 may also be movable in the thickness direction of the substrate 110. The substrate rack 2 may also be movable in the surface direction of the substrate 110. The substrate rack 2 may be configured to control the tilt of the substrate 110. For example, the substrate rack 2 may include a plurality of chucks mounted on the outer edge of the substrate 110. Each chuck may be independently movable in the thickness direction and the surface direction of the substrate 110.

[0102] like Figure 3 As shown, the vapor deposition apparatus 10 may include a mask holder 3 that holds the mask device 15. The mask holder 3 may be movable.

[0103] By moving at least one of the substrate holder 2 and the mask holder 3 , the position of the mask 50 relative to the substrate 110 can be adjusted.

[0104] The vapor deposition device 10 may include a cooling plate 4. Figure 3 As shown, the cooling plate 4 may be disposed on the second surface 112 side of the substrate 110. The cooling plate 4 may have a flow path for circulating a refrigerant inside the cooling plate 4. The cooling plate 4 can suppress a temperature rise of the substrate 110 during the vapor deposition process.

[0105] The vapor deposition device 10 may include a magnet 5. Figure 3 As shown, the magnet 5 can be arranged on the second surface 112 side of the substrate 110. The magnet 5 can also be arranged on the surface of the cooling plate 4 away from the substrate 110. The magnet 5 can attract the mask 50 to the substrate 110 side by magnetic force. In this way, the gap between the mask 50 and the substrate 110 can be reduced or eliminated. In this way, the generation of shadows in the evaporation process can be suppressed. Shadow refers to the phenomenon that the evaporation material 7 enters the gap between the mask 50 and the substrate 110, thereby making the shape of the evaporation layer uneven. The shape of the evaporation layer refers to the thickness of the evaporation layer, the size of the evaporation layer when viewed from above, etc. An electrostatic chuck using electrostatic force can be used to attract the mask 50 to the substrate 110 side.

[0106] Figure 4 is a top view of the mask apparatus 15. The mask apparatus 15 may include a frame 40 and a plurality of masks 50 fixed to the frame 40. The frame 40 includes an opening 45 that overlaps with the plurality of masks 50. The frame 40 may have a rectangular outline extending in the first direction D1 and the second direction D2. The frame 40 may support the mask 50 while applying tension to the mask 50 in the first direction D1. The plurality of masks 50 may also be arranged in the second direction D2.

[0107] The mask 50 is fixed to the frame 40. When viewed from above, the mask 50 includes a first end 51, a second end 52, and a middle portion 53. The first end 51 and the second end 52 overlap with the sides of the frame 40 when viewed from above. The first end 51 and the second end 52 may also be opposed in the first direction D1. The middle portion 53 is located between the first end 51 and the second end 52 when viewed from above. The middle portion 53 overlaps with the opening 45 when viewed from above. The middle portion 53 includes a through-hole group 54. The middle portion 53 may also include a plurality of through-hole groups 54 arranged in the first direction D1.

[0108] The mask 50 will be described in detail. Figure 5is a top view illustrating an example of a mask 50. When viewed from above, the mask 50 may include a first side edge 501 and a second side edge 502 extending in a first direction D1; and a first end 503 and a second end 504. The first end 503 and the second end 504 are ends of the mask 50 in the first direction D1. The first side edge 501 and the second side edge 502 are ends of the mask 50 in the second direction D2.

[0109] The through-hole group 54 of the middle portion 53 includes a plurality of through-holes 56 that are regularly arranged in a plan view. The through-holes 56 may also be periodically arranged in two directions. For example, the through-holes 56 may be periodically arranged in the first direction D1 and the second direction D2.

[0110] One through-hole group 54 corresponds to one organic device 100. For example, the plurality of first organic layers 130A included in one organic device 100 are formed of a vapor-deposited material passing through the plurality of through-holes 56 of one through-hole group 54. The mask 50 includes at least one through-hole group 54. The mask 50 may also include two or more through-hole groups 54 arranged in the first direction D1.

[0111] like Figure 5 As shown, the middle portion 53 may include two or more first marks 57 arranged along the first side edge 501. The first marks 57 may be located between the first side edge 501 and the through-hole group 54 in the second direction D2. The middle portion 53 may include two or more second marks 58 arranged along the second side edge 502. The second marks 58 may be located between the second side edge 502 and the through-hole group 54 in the second direction D2.

[0112] When the through-hole group 54 has a quadrilateral outline, the first mark 57 and the second mark 58 may be arranged to correspond to corners of the outline of the through-hole group 54. For example, one first mark 57 or one second mark 58 may be arranged to correspond to one corner of the outline of the through-hole group 54.

[0113] The mask 50 may have a dimension L11, a dimension L12, a dimension L21, and a dimension L22. Dimension L11 is the distance between the two first marks 57 that are farthest apart in the first direction D1. Dimension L12 is the distance between the two second marks 58 that are farthest apart in the first direction D1. Dimension L21 is the distance between the first mark 57 closest to the first end 503 and the second mark 58 closest to the first end 503, in the second direction D2. Dimension L22 is the distance between the first mark 57 closest to the second end 504 and the second mark 58 closest to the second end 504, in the second direction D2. In the step of measuring the dimensions of the mask 50 described later, at least one of the dimensions L11, L12, L21, and L22 may be measured.

[0114] The first mark 57 and the second mark 58 are, for example, depressions formed on the first surface 61 or depressions formed on the second surface 62. The depth of the depression may be, for example, greater than 2 μm, greater than 3 μm, or greater than 5 μm. The depth of the depression may be, for example, less than 10 μm, less than 20 μm, or less than 30 μm. The range of the depth of the depression may be defined by the first group consisting of 2 μm, 3 μm, and 5 μm and / or the second group consisting of 10 μm, 20 μm, and 30 μm. The range of the depth of the depression may be defined by a combination of any one of the values included in the first group and any one of the values included in the second group. The range of the depth of the depression may be defined by a combination of any two of the values included in the first group. The range of the depth of the depression may be defined by a combination of any two of the values included in the second group. For example, the depth of the depression can be greater than 2 μm and less than 30 μm, greater than 2 μm and less than 20 μm, greater than 2 μm and less than 10 μm, greater than 2 μm and less than 5 μm, greater than 2 μm and less than 3 μm, greater than 3 μm and less than 30 μm, greater than 3 μm and less than 20 μm, greater than 3 μm and less than 10 μm, greater than 3 μm and less than 5 μm, greater than 5 μm and less than 30 μm, greater than 5 μm and less than 20 μm, greater than 5 μm and less than 10 μm, greater than 10 μm and less than 30 μm, greater than 10 μm and less than 20 μm, or greater than 20 μm and less than 30 μm.

[0115] The size of the first mark 57 and the second mark 58 when viewed from above may be larger than the dimension r of the through portion 564 of the through hole 56, which will be described later. The ratio of the size of the first mark 57 and the second mark 58 when viewed from above to the dimension r of the through portion 564 may be, for example, greater than 1.03, greater than 2.0, or greater than 5.0. The ratio of the size of the first mark 57 and the second mark 58 when viewed from above to the dimension r of the through portion 564 may be, for example, less than 5.0, less than 10, or less than 50. The range of the ratio of the size of the first mark 57 and the second mark 58 when viewed from above to the dimension r of the through portion 564 may be defined by the first group consisting of 1.03, 2.0, and 5.0 and / or the second group consisting of 5.0, 10, and 50. The range of the ratio of the size of the first mark 57 and the second mark 58 to the size r of the through portion 564 in a plan view can be defined by a combination of any one of the values included in the first group and any one of the values included in the second group. The range of the ratio of the size of the first mark 57 and the second mark 58 to the size r of the through portion 564 in a plan view can be defined by a combination of any two of the values included in the first group. The range of the ratio of the size of the first mark 57 and the second mark 58 to the size r of the through portion 564 in a plan view can be defined by a combination of any two of the values included in the second group. For example, the ratio of the size of the first mark 57 and the second mark 58 when viewed from above to the size r of the through portion 564 can be greater than 1.03 and less than 50, can be greater than 1.03 and less than 10, can be greater than 1.03 and less than 5.0, can be greater than 1.03 and less than 5.0, can be greater than 1.03 and less than 2.0, can be greater than 2.0 and less than 50, can be greater than 2.0 and less than 10, can be greater than 2.0 and less than 5.0, can be greater than 2.0 and less than 5.0, can be greater than 5.0 and less than 50, can be greater than 5.0 and less than 10, can be greater than 5.0 and less than 50, can be greater than 5.0 and less than 10, or can be greater than 10 and less than 50.

[0116] The outline of the mask 50 has a dimension M11 in the first direction D1. The dimension M11 may be, for example, greater than 600 mm, greater than 800 mm, or greater than 1000 mm. The dimension M11 may be, for example, less than 1200 mm, less than 1500 mm, or less than 2000 mm. The range of the dimension M11 may be defined by the first group consisting of 600 mm, 800 mm, and 1000 mm and / or the second group consisting of 1200 mm, 1500 mm, and 2000 mm. The range of the dimension M11 may be defined by a combination of any one of the values included in the first group and any one of the values included in the second group. The range of the dimension M11 may be defined by a combination of any two of the values included in the first group. The range of the dimension M11 may be defined by a combination of any two of the values included in the second group. For example, the size M11 can be greater than 600mm and less than 2000mm, greater than 600mm and less than 1500mm, greater than 600mm and less than 1200mm, greater than 600mm and less than 1000mm, greater than 600mm and less than 800mm, greater than 800mm and less than 2000mm, greater than 800mm and less than 1500mm, greater than 800mm and less than 1200mm, greater than 800mm and less than 1000mm, greater than 1000mm and less than 2000mm, greater than 1000mm and less than 1500mm, greater than 1000mm and less than 1200mm, greater than 1200mm and less than 2000mm, greater than 1500mm and less than 2000mm.

[0117] The outline of the mask 50 has a dimension M21 in the second direction D2. The dimension M21 may be, for example, greater than 50 mm, greater than 100 mm, or greater than 150 mm. The dimension M21 may be, for example, less than 200 mm, less than 300 mm, or less than 500 mm. The range of the dimension M21 may be defined by the first group consisting of 50 mm, 100 mm, and 150 mm and / or the second group consisting of 200 mm, 300 mm, and 500 mm. The range of the dimension M21 may be defined by a combination of any one of the values included in the first group and any one of the values included in the second group. The range of the dimension M21 may be defined by a combination of any two of the values included in the first group. The range of the dimension M21 may be defined by a combination of any two of the values included in the second group. For example, the size M21 can be greater than 50 mm and less than 500 mm, greater than 50 mm and less than 300 mm, greater than 50 mm and less than 200 mm, greater than 50 mm and less than 150 mm, greater than 50 mm and less than 100 mm, greater than 100 mm and less than 500 mm, greater than 100 mm and less than 300 mm, greater than 100 mm and less than 200 mm, greater than 100 mm and less than 150 mm, greater than 150 mm and less than 500 mm, greater than 150 mm and less than 300 mm, greater than 150 mm and less than 200 mm, greater than 200 mm and less than 500 mm, greater than 200 mm and less than 300 mm, or greater than 300 mm and less than 500 mm.

[0118] Next, the cross-sectional structure of the mask 50 will be described. Figure 6 3 is a cross-sectional view showing an example of the mask 50 .

[0119] The mask 50 includes a metal plate 60 and through-holes 56 penetrating the metal plate 60. The metal plate 60 includes a first surface 61 and a second surface 62. The through-holes 56 penetrate the metal plate 60 from the first surface 61 to the second surface 62.

[0120] The through-hole 56 may include a first recess 561, a second recess 562, and a connecting portion 563 connecting the first recess 561 and the second recess 562. The first recess 561 is located on the first surface 61 and is recessed toward the second surface 62. The second recess 562 is located on the second surface 62 and is recessed toward the first surface 61. The first recess 561 and the second recess 562 are connected at the connecting portion 563, thereby forming the through-hole 56. The first recess 561 is formed by processing the metal plate 60 from the first surface 61 side using etching, laser processing, or the like. The second recess 562 is formed by processing the metal plate 60 from the second surface 62 side using etching, laser processing, or the like.

[0121] The first recess 561 has a dimension r1 in a plan view. The second recess 562 has a dimension r2 in a plan view. Dimension r2 may be larger than dimension r1. For example, the outline of the second recess 562 may surround the outline of the first recess 561 in a plan view.

[0122] The connecting portion 563 is located between the first surface 61 and the second surface 62. The connecting portion 563 may have a continuous contour all around. The connecting portion 563 may define a through portion 564 having the smallest opening area of the through hole 56 when the mask 50 is viewed from above.

[0123] The dimension r of the through portion 564 may be, for example, greater than 10 μm, greater than 15 μm, greater than 20 μm, or greater than 25 μm. Furthermore, the dimension r of the through portion 564 may be, for example, less than 40 μm, less than 45 μm, less than 50 μm, or less than 55 μm. The range of the dimension r of the through portion 564 may be defined by the first group consisting of 10 μm, 15 μm, 20 μm, and 25 μm and / or the second group consisting of 40 μm, 45 μm, 50 μm, and 55 μm. The range of the dimension r of the through portion 564 may be defined by a combination of any one of the values included in the first group and any one of the values included in the second group. The range of the dimension r of the through portion 564 may be defined by a combination of any two of the values included in the first group. The range of the dimension r of the through portion 564 may be defined by a combination of any two of the values included in the second group. For example, the size r of the through portion 564 may be 10 μm to 55 μm, 10 μm to 50 μm, 10 μm to 45 μm, 10 μm to 40 μm, 10 μm to 25 μm, 10 μm to 20 μm, 10 μm to 15 μm, 15 μm to 55 μm, 15 μm to 50 μm, 15 μm to 45 μm, 15 μm to 40 μm, 15 μm to 25 μm, 15 μm to 20 μm, or 20 μm to 50 μm. 5μm or less, can be 20μm or more and 50μm or less, can be 20μm or more and 45μm or less, can be 20μm or more and 40μm or less, can be 20μm or more and 25μm or less, can be 25μm or more and 55μm or less, can be 25μm or more and 50μm or less, can be 25μm or more and 45μm or less, can be 25μm or more and 40μm or more, can be 40μm or more and 55μm or less, can be 40μm or more and 50μm or less, can be 40μm or more and 45μm or less, can be 45μm or more and 55μm or less, can be 45μm or more and 50μm or more and 55μm or less.

[0124] The dimension r of the through portion 564 is defined by the light transmitted through the through hole 56. Specifically, parallel light is incident on one of the first surface 61 or the second surface 62 of the mask 50 along the normal direction of the mask 50, passes through the through hole 56, and is emitted from the other of the first surface 61 or the second surface 62. The dimension r of the through portion 564 is the dimension of the area occupied by the emitted light in the surface direction of the mask 50.

[0125] Figure 6 , the second surface 62 of the metal plate 60 remains between two adjacent second recesses 562, but the present invention is not limited to this. Although not shown, etching may be performed so that two adjacent second recesses 562 are connected. In other words, a portion where the second surface 62 of the metal plate 60 does not remain between two adjacent second recesses 562 may exist.

[0126] The materials of the mask 50 and the frame 40 are described. As the main material of the mask 50 and the frame 40, an iron alloy containing nickel can be used. In addition to nickel, the iron alloy may further contain cobalt. For example, as the material of the metal plate of the mask 50, an iron alloy in which the total content of nickel and cobalt is greater than 28% by mass and less than 54% by mass, and the content of cobalt is greater than 0% by mass and less than 6% by mass can be used. As a result, the difference between the thermal expansion coefficient of the mask 50 and the frame 40 and the thermal expansion coefficient of the substrate 110 containing glass can be reduced. Therefore, it is possible to suppress the reduction in dimensional accuracy and positional accuracy of the layer formed on the substrate 110 by the evaporation process due to the thermal expansion of the mask 50 frame 40, the substrate 110, etc.

[0127] The total content of nickel and cobalt in the metal plate of the mask 50 can be 28% by mass or more and 38% by mass or less. In this case, specific examples of iron alloys containing nickel or nickel and cobalt include Invar, Super Invar, and Ultra Invar. Invar is an iron alloy containing 34% by mass or more and 38% by mass or less of nickel, and the remainder is iron and unavoidable impurities. Super Invar is an iron alloy containing 30% by mass or more and 34% by mass or less of nickel, cobalt, and the remainder is iron and unavoidable impurities. Super Invar is an iron alloy containing 28% by mass or more and 34% by mass or less of nickel, 2% by mass or more and 7% by mass or less of cobalt, 0.1% by mass or more and 1.0% by mass or less of manganese, 0.10% by mass or less of silicon, 0.01% by mass or less of carbon, and the remainder is iron and unavoidable impurities.

[0128] The total content of nickel and cobalt in the mask 50 can be 38% to 54% by mass. For example, the mask 50 can be made of an iron alloy containing 38% to 54% by mass of nickel, with the remainder being iron and unavoidable impurities. Such a mask 50 can be manufactured by plating.

[0129] During the vapor deposition process, if the temperatures of the mask 50, frame 40, and substrate 110 do not reach a high temperature, it is not necessary to set the thermal expansion coefficients of the mask 50 and frame 40 to the same value as the thermal expansion coefficient of the substrate 110. In this case, materials other than the above-mentioned iron alloys can be used as the material constituting the mask 50. For example, iron alloys other than the above-mentioned iron alloys containing nickel, such as iron alloys containing chromium, can be used. As iron alloys containing chromium, for example, iron alloys called so-called stainless steel can be used. In addition, alloys other than iron alloys, such as nickel and nickel-cobalt alloys, can also be used.

[0130] The thickness T0 of the mask 50 may be, for example, 8 μm or more, 10 μm or more, 13 μm or more, or 15 μm or more. In addition, the thickness T0 may be, for example, 20 μm or less, 30 μm or less, 40 μm or less, or 50 μm or less. The range of the thickness T0 may be defined by the first group consisting of 8 μm, 10 μm, 13 μm, and 15 μm and / or the second group consisting of 20 μm, 30 μm, 40 μm, and 50 μm. The range of the thickness T0 may be defined by a combination of any one of the values included in the first group and any one of the values included in the second group. The range of the thickness T0 may be defined by a combination of any two of the values included in the first group. The range of the thickness T0 may be defined by a combination of any two of the values included in the second group. For example, the thickness T0 may be 8 μm to 50 μm, 8 μm to 40 μm, 8 μm to 30 μm, 8 μm to 20 μm, 8 μm to 15 μm, 8 μm to 13 μm, 8 μm to 10 μm, 10 μm to 50 μm, 10 μm to 40 μm, 10 μm to 30 μm, 10 μm to 20 μm, 10 μm to 15 μm, 10 μm to 13 μm, 13 μm to 50 μm, or more. It can be above 13μm and below 40μm, above 13μm and below 30μm, above 13μm and below 20μm, above 13μm and below 15μm, above 15μm and below 50μm, above 15μm and below 40μm, above 15μm and below 30μm, above 15μm and below 20μm, above 20μm and below 50μm, above 20μm and below 40μm, above 20μm and below 30μm, above 30μm and below 50μm, above 30μm and below 40μm, or above 40μm and below 50μm.

[0131] By setting the thickness T0 to 50 μm or less, the deposition material 7 can be prevented from adhering to the wall surface of the through-hole 56 before passing through the through-hole 56. By setting the thickness T0 to 30 μm or less, the deposition material 7 can be further prevented from adhering to the wall surface. By preventing the deposition material 7 from adhering to the wall surface, the utilization efficiency of the deposition material 7 can be improved. By setting the thickness T0 to 8 μm or more, the strength of the mask 50 can be ensured, thereby preventing damage and deformation of the mask 50.

[0132] An example of a method for manufacturing the metal plate 60 will be described. First, a base material 64 for the metal plate is prepared. The base material 64 is produced by melting raw materials in a furnace. After the base material 64 is removed from the furnace, a grinding process can be performed to shave the surface of the base material 64.

[0133] Then, if Figure 7 As shown, a rolling process is performed on the base material 64. For example, the base material 64 is conveyed toward the rolling device 65 while applying tension to the base material 64 in the direction F. The rolling device 65 includes a pair of working rollers 66, 67. The base material 64 is rolled using the pair of working rollers 66, 67. By rolling, the thickness of the base material 64 is reduced, and the base material 64 is stretched along the direction F. By rolling, a metal plate 60 extending along the direction F and having a predetermined thickness T is obtained. The direction F in which the metal plate 60 extends is also called the rolling direction F. The rolling direction F can be parallel to the first direction D1 of the mask 50.

[0134] The rolling process may include a hot rolling process, a cold rolling process, etc. A heat treatment process for heating the metal plate 60 may be performed between the hot rolling process and the cold rolling process. An annealing process may be performed after the rolling process.

[0135] An example of a method for manufacturing mask 50 using metal plate 60 will be described. A resist film is applied to first surface 61 and second surface 62 of metal plate 60. The resist film is then exposed and developed. Through the exposure and development steps, a first resist pattern is formed on first surface 61, and a second resist pattern is formed on second surface 62. The first and second resist patterns each include openings corresponding to through-holes 56.

[0136] A first etching step is performed using an etching solution to etch the first surface 61. Through the first etching step, a plurality of first recesses 531 are formed on the first surface 61. The recesses constituting the first mark 57 and the second mark 58 may be formed on the first surface 61 simultaneously with the first recesses 531.

[0137] A second etching step is performed using an etching solution to etch the second surface 62. Through the second etching step, a plurality of second recesses 532 are formed on the second surface 62. The recesses constituting the first marks 57 and the second marks 58 may also be formed on the second surface 62 simultaneously with the second recesses 532. The recesses on the first surface 61 and the recesses on the second surface 62 are connected to form through-holes 56.

[0138] Through the first etching step and the second etching step, a plurality of through holes 56 are formed in the metal plate 60 .

[0139] Figure 85 is a plan view showing an example of a metal plate 60 having a plurality of through-holes 56. The mask 50 is obtained by partially cutting out the metal plate 60 having a plurality of through-holes 56. For example, the mask 50 is obtained by cutting out the region indicated by the dotted line from the metal plate 60.

[0140] like Figure 8 As shown, the region indicated by the dotted line may extend along the rolling direction F. That is, the first direction D1 may be parallel to the rolling direction F. Figure 8 As shown, two or more masks 50 can be taken out from the metal plate 60 in a direction perpendicular to the rolling direction F.

[0141] Figures 9-11 : is a diagram showing an example of the mask 50 taken out from the metal plate 60. The mask 50 may be partially warped. Figure 9 In the example shown, the first side edge 501 and the second side edge 502 of the mask 50 have undulating shapes extending along the first direction D1. Figure 10 and Figure 11 In the example shown, an undulating shape extending along the first direction D1 appears between the first side edge 501 and the second side edge 502. The cause of the local warping of the mask 50 is not particularly limited.

[0142] The method for manufacturing the mask 50 may include an inspection step of inspecting the mask 50. The inspection step may include, for example, a dimension measurement step of measuring the dimensions of the mask 50. The quality of the mask 50 may be determined based on the measured dimensions.

[0143] An example of a method of measuring the dimensions of the mask 50 will be described. Figure 12 This figure shows an example of a measuring device 80 for measuring the dimensions of a mask 50. The measuring device 80 includes at least a workbench 81 on which the mask 50 is placed, a suction device 82, and an observation device 89. The observation device 89 observes the mask 50 placed on the workbench 81. The observation device 89 may include, for example, a camera 891 positioned above the mask 50 placed on the workbench 81. The measuring device 80 may include a computer for controlling the processes performed by the measuring device 80.

[0144] The work table 81 is a table on which an observation object such as the mask 50 is placed. The work table 81 includes a support surface 811 on which the mask 50 overlaps when viewed from above. The support surface 811 may also be extended in the horizontal direction.

[0145] like Figure 12 As shown, the measuring device 80 may include a glass plate 87 positioned between the support surface 811 of the stage 81 and the mask 50 to support the mask 50. The glass plate 87 is disposed on the support surface 811 of the stage 81. The mask 50 may also be in contact with the glass plate 87.

[0146] The suction device 82 generates electricity to attract the mask 50 to the support surface 811. The electricity can make the mask 50 have a flatter shape. For example, the electricity can eliminate the undulations in the mask 50.

[0147] When the frame 40 of the masking device 15 applies tension to the mask 50, the mask 50 maintains high flatness. That is, when the mask 50 is in use, the mask 50 maintains high flatness. The sizing process is preferably performed with the mask 50 in a state close to that of use. Using the suction device 82 allows the sizing process to be performed with the mask 50 in a state close to that of use.

[0148] The power generated by the attraction device 82 is Coulomb force, Johnson-Rabbec force, etc. Figure 13 As shown, the attraction device 82 may include an electrostatic chuck 83 .

[0149] The electrostatic chuck 83 may include a first electrode layer 831 and a second electrode layer 832. The first electrode layer 831 and the second electrode layer 832 may be arranged in parallel in the in-plane direction of the support surface 811. The direction of the voltage applied to the first electrode layer 831 and the direction of the voltage applied to the second electrode layer 832 may be opposite. For example, a negative voltage may be applied to the first electrode layer 831 and a positive voltage may be applied to the second electrode layer 832. The electric charge in the mask 50 moves in a manner that attracts the first electrode layer 831 and the second electrode layer 832. Figure 13 As shown, positive charges are distributed on the mask 50 that overlaps with the first electrode layer 831 when viewed from above, and negative charges are distributed on the mask 50 that overlaps with the second electrode layer 832 when viewed from above. The charges on the first electrode layer 831 and the second electrode layer 832 and the charges on the mask 50 are attracted to each other, generating an electric force that attracts the mask 50 toward the support surface 811.

[0150] The glass plate 87 preferably has a small thickness. The smaller the thickness of the glass plate 87, the more it can suppress the reduction in power caused by the glass plate 87. The thickness of the glass plate 87 can be, for example, 100 μm or more, 200 μm or more, or 300 μm or more. The thickness of the glass plate 87 can be, for example, 500 μm or less, 1000 μm or less, or 2000 μm or less. The range of the thickness of the glass plate 87 can be defined by the first group consisting of 100 μm, 200 μm, and 300 μm and / or the second group consisting of 500 μm, 1000 μm, and 2000 μm. The range of the thickness of the glass plate 87 can be defined by a combination of any one of the values included in the first group and any one of the values included in the second group. The range of the thickness of the glass plate 87 can be defined by a combination of any two of the values included in the first group. The range of the thickness of the glass plate 87 can be defined by a combination of any two of the values included in the second group described above. The thickness of the glass plate 87 can be, for example, greater than 100 μm and less than 2000 μm, greater than 100 μm and less than 1000 μm, greater than 100 μm and less than 500 μm, greater than 100 μm and less than 300 μm, greater than 100 μm and less than 200 μm, greater than 200 μm and less than 2000 μm, greater than 200 μm and less than 1000 μm, greater than 200 μm and less than 500 μm, greater than 200 μm and less than 300 μm, greater than 300 μm and less than 2000 μm, greater than 300 μm and less than 1000 μm, greater than 300 μm and less than 500 μm, greater than 500 μm and less than 2000 μm, greater than 500 μm and less than 1000 μm, or greater than 1000 μm and less than 2000 μm.

[0151] The electrostatic chuck 83 may also function as the workbench 81. For example, the electrostatic chuck 83 may include a support surface 811. The support surface 811 may also be made of an inorganic material such as ceramics.

[0152] The measuring device 80 may include a moving device that moves the observation device 89 in a direction within the support surface 811. The moving device may include a first moving device 91 and a second moving device 92. The second moving device 92 can move the observation device 89 in a second direction D2. The second moving device 92 can support the observation device 89 above the mask 50. The first moving device 91 can move the second moving device 92 in the first direction D1. The first moving device 91 can support the second moving device 92 above the mask 50.

[0153] The observation device 89 observes the mask 50 at multiple positions in the first direction D1 and the second direction D2. The dimensions of the mask 50 are measured based on the observation results of the observation device 89. The observation device 89 may also include a light transmitter that emits light toward the support surface 811. The dimensions of the mask 50 can be calculated based on light reflected from the mask 50, the glass plate 87, or the support surface 811. For example, the dimensions of the mask 50 can be calculated based on light reflected from the first marking 57 and the second marking 58 on the mask 50.

[0154] An example of a measurement method using the measurement device 80 will be described.

[0155] The mask 50 placement step is performed. For example, the mask 50 is placed on the glass plate 87 and the glass plate 87 is placed on the support surface 811. If the mask 50 is thin, it is not easy to place the mask 50 directly on the support surface 811. Using the glass plate 87 facilitates the placement step. For example, deformation such as bending of the mask 50 can be suppressed.

[0156] Next, an attraction step is performed to generate an electric force to attract the mask 50 toward the support surface 811. For example, a negative charge is applied to the first electrode layer 831 of the electrostatic chuck 83, and a positive charge is applied to the second electrode layer 832. The electric force generated between the electrostatic chuck 83 and the mask 50 attracts the mask 50 toward the support surface 811. This electric force improves the flatness of the mask 50. For example, it eliminates any undulations in the mask 50.

[0157] Next, a measurement step is performed to measure the dimensions of the mask 50. The observation device 89 observes the mask 50 at a plurality of positions in the first direction D1 and the second direction D2. Since the mask 50 has high flatness, the accuracy of the measurement step is improved.

[0158] The measurement process may include a first measurement process and a second measurement process. The first measurement process measures the dimensions of the mask 50 in the first direction D1. For example, the first measurement process may calculate the aforementioned dimensions L11 and L12 of the mask 50 based on the detected positions of the first mark 57 and the second mark 58. The second measurement process measures the dimensions of the mask 50 in the second direction D2. For example, the second measurement process may calculate the aforementioned dimensions L21 and L22 of the mask 50 based on the detected positions of the first mark 57 and the second mark 58.

[0159] Next, a determination step can be performed. The determination step can determine the quality of the mask 50 based on the measured dimensions. For example, a mask 50 whose measured dimensions differ from the ideal dimensions by a threshold value or less can be determined as acceptable. Only masks 50 determined to be acceptable can be shipped.

[0160] During the manufacturing process of masking apparatus 15, a mask 50 that has been determined to be acceptable is used. When tension is applied to mask 50 to improve its flatness, it can achieve high dimensional accuracy. Therefore, in the state of masking apparatus 15, the positional accuracy of the plurality of through-holes 56 in mask 50 is improved. Consequently, the positional accuracy of the layer deposited on substrate 110 via mask 50 can be improved.

[0161] Various modifications may be made to the above-described embodiment. Other embodiments will be described with reference to the accompanying drawings as needed. In the following description and the accompanying drawings used in the following description, parts that can be configured similarly to the above-described embodiment are denoted by the same reference numerals as those used for the corresponding parts in the above-described embodiment, and duplicate descriptions are omitted. In cases where the effects obtained in the above-described embodiment are clearly also obtainable in other embodiments, their descriptions may be omitted.

[0162] Figure 14 1 is a diagram showing an example of a measuring device 80 for measuring the dimensions of the mask 50. The suction device 82 of the measuring device 80 may include a charging device 84 and a conductor 85.

[0163] The charging device 84 is used to charge the mask 50. The charging device 84 charges the mask 50, for example, by corona discharge. The charging device 84 can be located above the mask 50. When viewed from above, the charging device 84 can intersect the mask 50. The charging device 84 can be a charging rod. The charging rod can include multiple electrodes extending toward the mask 50. By applying voltage to the multiple electrodes, molecules in the air are charged. The charged molecules adhere to the mask 50, thereby charging the mask 50.

[0164] Conductor 85 is a conductive member. Conductor 85 can be made of a metal such as aluminum. Conductor 85 is located between mask 50 and stage 81. Conductor 85 can extend in the in-plane direction of support surface 811 so as to overlap mask 50 when viewed from above.

[0165] The suction device 82 may include an insulator 86 located between the mask 50 and the conductor 85. The insulator 86 may be a member that can move independently of the conductor 85. The insulator 86 may also be a layer having insulating properties formed on the surface of the conductor 85.

[0166] The measuring device 80 may include a glass plate 87 located between the conductor 85 and the mask 50. The glass plate 87 may function as an insulator 86. For example, although not shown, the glass plate 87 may be in contact with the conductor 85.

[0167] exist Figure 14 and Figure 15In the example shown, the attraction process includes a charging process of charging the mask 50 using the charging device 84. When the mask 50 is charged, charges having a polarity different from that generated in the mask 50 are generated in the conductor 85. For example, Figure 15 As shown, when mask 50 is positively charged, a negative charge is applied to conductor 85. The charges of conductor 85 and mask 50 attract each other, generating an electric force that pulls mask 50 toward support surface 811. This electric force improves the flatness of the shape of mask 50. Next, a measurement step is performed to measure the dimensions of mask 50. The high flatness of mask 50 improves the accuracy of the measurement step.

[0168] The measuring device 80 can be used to measure the dimensions of the metal plate 60 without the through-holes 56. The dimensions of the metal plate 60 can be calculated based on the positions of marks formed on the surface of the metal plate 60. The dimensions of the metal plate 60 can also be calculated based on the position of the outline of the metal plate 60.

Claims

1. A method for measuring the size of a metal plate, comprising: an arranging step of arranging the metal plate so that the metal plate overlaps with the support surface of the workbench when viewed from above; an attraction step of generating electricity to attract the metal plate toward the supporting surface; and In the measuring step, the dimensions of the metal plate are measured.

2. The assay method according to claim 1, wherein The metal plate constitutes a mask, The mask includes a first end portion and a second end portion facing each other in a first direction, and a middle portion located between the first end portion and the second end portion and having a plurality of through holes formed therein.

3. The assay method according to claim 2, wherein The measuring step includes a first measuring step of measuring a dimension of the metal plate in the first direction and a second measuring step of measuring a dimension of the metal plate in a second direction perpendicular to the first direction.

4. The assay method according to claim 2, wherein Each of the plurality of through holes has a size of 50 μm or less.

5. The measuring method according to any one of claims 1 to 4, wherein The metal plate has a thickness of 30 μm or less.

6. The measuring method according to any one of claims 1 to 4, wherein The electric force is Coulomb force or Johnson-Rabbich force.

7. The assay method according to claim 6, wherein The workbench is composed of an electrostatic chuck.

8. The assay method according to claim 6, wherein The attracting step includes: a charging step of charging the metal plate; and a step of attracting the charged metal plate toward the supporting surface using a conductor.

9. The assay method according to claim 8, wherein The charging step is performed by a charging rod located above the metal plate and intersecting the metal plate in a plan view.

10. The measuring method according to any one of claims 1 to 4, wherein The measuring step includes an observation step of observing the metal plate using a camera located above the metal plate.

11. The assay method according to claim 10, wherein The observation step includes a step of detecting positions of a plurality of marks on the surface of the metal plate.

12. The measuring method according to any one of claims 1 to 4, wherein In the arrangement step, the metal plate is arranged on the glass plate.

13. The assay method according to claim 12, wherein The glass plate has a thickness of 100 μm to 2000 μm.

14. A method for manufacturing a mask, comprising: The process of preparing metal sheets; forming a plurality of through holes in the metal plate; a step of cutting out the metal plate portion in which the through-hole is formed to obtain the mask; and A step of measuring the dimensions of the mask using the measuring method according to any one of claims 1 to 4.

15. A measuring device for measuring the size of a metal plate, comprising: a workbench comprising a support surface on which the metal plates overlap when viewed from above; an attraction device that generates electricity to attract the metal plate toward the support surface; and An observation device observes the metal plate.

16. The measuring device according to claim 15, wherein The suction device includes an electrostatic chuck functioning as the worktable.

17. The measuring device according to claim 15, wherein The attraction device includes: a charging device that charges the metal plate; and a conductor that attracts the charged metal plate toward the support surface.

18. The measuring device according to claim 17, wherein The charging device includes a charging rod located above the metal plate and crossing the metal plate when viewed from above.

19. The measuring device according to any one of claims 15 to 18, wherein The observation device includes a camera located above the metal plate. 20 . The measuring device according to claim 15 , further comprising a glass plate supporting the metal plate.

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