IGCT breakdown characteristic test platform and method

Abstract

The invention relates to the technical field of power electronic devices, in particular to an IGCT breakdown characteristic test platform and method, and the platform comprises a test working condition module, a device state monitoring module and a breakdown pre-judgment module. The test working condition module is connected with the IGCT and is used for adjusting the gate voltage of the IGCT, the voltage between the anode and the cathode and the junction temperature value; the device state monitoring module is connected with the IGCT and is used for acquiring the variable quantity of the conduction current of the IGCT, the crack characteristic signal of the IGCT and the variable quantity of the local hot spot temperature of the IGCT within a preset time interval; and the breakdown pre-judgment module is connected with the device state monitoring module and is used for generating a breakdown characteristic test result according to the variable quantity of the breakover current, the crack characteristic signal and the variable quantity of the local hot spot temperature, so that the test of the breakdown characteristic of the IGCT is realized.

Description

Technical Field

[0001] The present invention relates to the technical field of power electronic devices, and in particular to a testing platform and method for IGCT breakdown characteristics. Background Art

[0002] With the continuous development of renewable energy generation technologies, efficient and reliable transmission of renewable energy power has become a research hotspot. Since renewable energy generation is often located far from load centers, flexible direct current (HVDC) transmission technology has gained widespread application due to its significant advantages for long-distance, large-capacity power transmission. The core component of flexible HVDC transmission technology is the converter valve, which performs key functions such as AC / DC conversion, power flow control, and fault ride-through. Traditional converter valves utilize a cascaded system of press-fit IGBT (insulated gate bipolar transistor) power modules. Press-fit IGBTs offer advantages such as short-circuit protection and dual-sided heat dissipation, but their internal multi-chip parallel connection increases manufacturing costs and reduces device reliability. Compared to IGBTs, IGCTs (integrated gate-commutated thyristors) utilize a single-wafer structure, offering lower on-state voltage drop, higher reliability, and lower manufacturing costs. These advantages make IGCTs suitable for use in converter valves, reducing manufacturing costs. However, when IGCTs are used in converter valves, their breakdown characteristics impact their stable operation, necessitating testing of their breakdown characteristics. However, the prior art lacks a solution for testing the breakdown characteristics of IGCT devices. Summary of the Invention

[0003] The present invention provides an IGCT breakdown characteristic testing platform and method for testing the IGCT breakdown characteristic.

[0004] On one hand, the present invention provides a test platform for IGCT breakdown characteristics, including: a test condition module, a device state monitoring module and a breakdown prediction module;

[0005] The test condition module is connected to the IGCT and is used to adjust the gate voltage, the voltage between the anode and the cathode, and the junction temperature of the IGCT;

[0006] The device state monitoring module is connected to the IGCT and is used to obtain a change in the on-state current of the IGCT, a crack characteristic signal of the IGCT, and a change in the local hot spot temperature of the IGCT within a preset time interval;

[0007] The breakdown prediction module is connected to the device state monitoring module and is used to generate a breakdown characteristic test result according to the change in the on-current, the crack characteristic signal, and the change in the local hot spot temperature.

[0008] Optionally, the breakdown prediction module is specifically used to determine that the IGCT has a precursor risk of breakdown when the change in the on-current is greater than a preset current change threshold, and the crack characteristic signal indicates that there is a crack in the IGCT package, and the change in the local hot spot temperature is greater than a preset temperature change threshold, and generate a breakdown characteristic test result.

[0009] Optionally, it further includes a current limiting protection module; the current limiting protection module is connected in series in the loop between the first power supply unit and the IGCT;

[0010] The breakdown prediction module is connected to the current limiting protection module, and is used to start the current limiting protection module to limit the current value of the loop when it is determined that the IGCT has a precursory risk of breakdown.

[0011] Optionally, the current limiting protection module includes a current limiting element and an electronic switching device;

[0012] The current limiting element is connected in series with the electronic switch device and is connected in series in the loop;

[0013] The breakdown prediction module is connected to the electronic switch device and is used to disconnect the electronic switch device when it is determined that the IGCT has a precursory risk of breakdown, so that the current limiting element is connected to the circuit.

[0014] Optionally, the test condition module includes: a first power supply unit, a second power supply unit and a junction temperature control unit;

[0015] The first power supply unit is connected to the anode and cathode of the IGCT respectively, and is used to obtain and apply a corresponding first target voltage to the IGCT according to a first target voltage parameter;

[0016] The second power supply unit is connected to the gate of the IGCT, and is used to obtain and apply a corresponding second voltage to the gate of the IGCT according to a second target voltage parameter;

[0017] The junction temperature control unit is used to obtain and adjust the junction temperature value of the IGCT according to the target junction temperature parameter.

[0018] Optionally, it also includes: a machine learning module;

[0019] The device state monitoring module is connected to the machine learning module and is further used to collect the gate voltage, junction temperature, and voltage between the anode and cathode of the IGCT, and transmit the voltage between the anode and cathode, the gate voltage, the junction temperature, the change in the on-state current, the crack characteristic signal, the change in the local hot spot temperature, and the breakdown characteristic test result to the machine learning module;

[0020] The machine learning module is used to construct and train a prediction model with the gate voltage, junction temperature value and voltage between the anode and cathode of the IGCT as input and the breakdown characteristic test result as output, based on the voltage between the anode and cathode, the gate voltage, the junction temperature value, the change in the on-state current, the crack characteristic signal, the change in the local hot spot temperature and the breakdown characteristic test result.

[0021] Another aspect of the present invention provides a method for testing the breakdown characteristics of an IGCT, which is applied to the test platform described above, and the method comprises:

[0022] The test condition module adjusts the gate voltage, the voltage between the anode and the cathode, and the junction temperature of the IGCT;

[0023] The device state monitoring module obtains the change in the on-state current of the IGCT, the crack characteristic signal of the IGCT, and the change in the local hot spot temperature of the IGCT within a preset time interval;

[0024] The breakdown prediction module generates a breakdown characteristic test result according to the change in the on-current, the crack characteristic signal, and the change in the local hot spot temperature.

[0025] Optionally, the breakdown prediction module generates a breakdown characteristic test result according to the change in the on-state current, the crack characteristic signal, and the change in the local hotspot temperature, including:

[0026] When the change in the on-current is greater than a preset current change threshold, and the crack characteristic signal indicates that there is a crack in the IGCT package, and the change in the local hot spot temperature is greater than a preset temperature change threshold, the breakdown prediction module determines that the IGCT has a precursor risk of breakdown and generates a breakdown characteristic test result.

[0027] Optionally, it also includes:

[0028] When it is determined that the IGCT has a precursory risk of breakdown, the breakdown prediction module starts the current limiting protection module to limit the current value of the loop between the first power supply unit and the IGCT.

[0029] Optionally, it also includes:

[0030] The device state monitoring module collects the gate voltage, junction temperature, and voltage between the anode and cathode of the IGCT, and transmits the voltage between the anode and cathode, the gate voltage, the junction temperature, the change in the on-state current, the crack characteristic signal, the change in the local hot spot temperature, and the breakdown characteristic test result to the machine learning module;

[0031] The machine learning module constructs and trains a prediction model based on the gate voltage, junction temperature value, and voltage between the anode and cathode of the IGCT, and the voltage between the anode and cathode, the gate voltage, the junction temperature value, the change in the on-current, the crack characteristic signal, the change in the local hot spot temperature, and the breakdown characteristic test result, with the gate voltage, junction temperature value, and voltage between the anode and cathode of the IGCT as input and the breakdown characteristic test result as output.

[0032] It can be seen from the above technical solutions that the present invention has the following advantages:

[0033] The present invention provides a test platform for the breakdown characteristics of an IGCT, comprising: a test condition module, a device state monitoring module and a breakdown prediction module; the test condition module is connected to the IGCT and is used to adjust the gate voltage, the voltage between the anode and the cathode, and the junction temperature of the IGCT; the device state monitoring module is connected to the IGCT and is used to obtain, within a preset time interval, a change in the on-state current of the IGCT, a crack characteristic signal of the IGCT, and a change in the local hotspot temperature of the IGCT; the breakdown prediction module is connected to the device state monitoring module and is used to generate a breakdown characteristic test result based on the change in the on-state current, the crack characteristic signal, and the change in the local hotspot temperature.

[0034] In the present invention, a test condition module is connected to the IGCT and is used to adjust the gate voltage, the voltage between the anode and cathode, and the junction temperature of the IGCT. Therefore, the test condition module can construct test environments under different operating conditions to test the breakdown characteristics of the IGCT under different operating conditions. Furthermore, in the present invention, a device state monitoring module is used to obtain the change in the IGCT's on-state current, the IGCT's crack characteristic signal, and the change in the IGCT's local hotspot temperature within a preset time interval. A breakdown prediction module is connected to the device state monitoring module and is used to generate a breakdown characteristic test result based on the change in the on-state current, the crack characteristic signal, and the change in the local hotspot temperature. Thus, a breakdown characteristic test result corresponding to the test environment is obtained, and the breakdown characteristic of the IGCT is tested. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0036] Figure 1 A schematic structural diagram of a test platform for IGCT breakdown characteristics provided by an embodiment of the present invention;

[0037] Figure 2 Another structural schematic diagram of a test platform for IGCT breakdown characteristics provided by an embodiment of the present invention;

[0038] Figure 3 A schematic structural diagram of a current limiting protection unit provided in an embodiment of the present invention;

[0039] Figure 4 A flowchart of a method for testing the breakdown characteristics of an IGCT provided in an embodiment of the present invention. DETAILED DESCRIPTION

[0040] The embodiments of the present invention provide a testing platform and method for IGCT breakdown characteristics, which are used to test the IGCT breakdown characteristics.

[0041] In order to make the purpose, features, and advantages of the present invention more obvious and easy to understand, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the embodiments described below are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention.

[0042] See also Figure 1 An embodiment of the present invention provides a test platform for the breakdown characteristics of an IGCT, including: a test condition module 1, a device state monitoring module 2, and a breakdown prediction module 3; the test condition module 1 is connected to the IGCT and is used to adjust the gate voltage, the voltage between the anode and the cathode, and the junction temperature of the IGCT; the device state monitoring module 2 is connected to the IGCT and is used to obtain the change in the on-state current of the IGCT, the crack characteristic signal of the IGCT, and the change in the local hot spot temperature of the IGCT within a preset time interval; the breakdown prediction module 3 is connected to the device state monitoring module 2 and is used to generate a breakdown characteristic test result based on the change in the on-state current, the crack characteristic signal, and the change in the local hot spot temperature.

[0043] It should be noted that the junction temperature refers to the temperature of the PN junction inside the IGCT. In this embodiment, the test condition module 1 can be used to adjust the voltage between the anode and cathode of the IGCT, the gate voltage, and the junction temperature according to the actual test conditions to meet the corresponding test requirements.

[0044] The local hotspot temperature refers to the temperature at the highest point on the entire contact surface of the IGCT. The contact surface refers to the area on the IGCT housing that performs heat dissipation. For example, when an IGCT is used in a converter valve in a flexible DC-V converter system, the contact surface is the area where the IGCT housing contacts the heat dissipation device in the system.

[0045] It is understandable that the data obtained by the device state monitoring module 2 are all obtained under the test environment constructed by the test condition module 1. The device state monitoring module 2 can periodically obtain the change in the on-current of the IGCT, the crack characteristic signal and the change in the temperature of the local hot spot of the IGCT according to the set time interval. The crack characteristic signal is used to feedback whether a crack has appeared in the IGCT package. In one example, the method for obtaining the change in the on-current can be: at the starting point of the time interval, the on-current of the IGCT is obtained, and at the end point of the time interval, the on-current of the IGCT is obtained, and the on-current at the end point of the time is subtracted from the on-current at the starting point of the time interval to obtain the change in the on-current of the IGCT during the time interval. The method for obtaining the change in the local hot spot temperature is similar. The crack characteristic signal can be obtained by detecting the package of the IGCT.

[0046] The breakdown prediction module 3 is used to receive the change in the on-current, the crack characteristic signal, and the change in the local hot spot temperature transmitted by the device state monitoring module 2, and generate a breakdown characteristic test result. Among them, the breakdown characteristic test result includes the breakdown of the IGCT. It can be understood that the breakdown prediction module 3 can use the change in the on-current and the change in the local hot spot temperature to determine the change trend of the current and temperature of the IGCT, and can determine whether the IGCT package has cracks through the crack characteristic signal. Therefore, based on the change in the on-current, the change in the local hot spot temperature, and the crack characteristic signal, it can be judged whether the IGCT has a breakdown precursor, and then a breakdown characteristic test result including the existence of a breakdown precursor of the IGCT is generated, and the test of the current working condition is ended to obtain the breakdown characteristic of the IGCT corresponding to the current working condition. Therefore, in actual applications, by using the test condition module 1 to construct various operating conditions, and using the device state monitoring module 2 and the breakdown prediction module 3 to judge the breakdown risk of the IGCT under various operating conditions, the operating condition parameters that will cause the IGCT to break down under various operating conditions (i.e., the gate voltage of the IGCT, the voltage between the anode and the cathode, and the junction temperature value) are obtained, thereby providing an effective data basis for the breakdown risk warning of the IGCT actually used in the converter valve.

[0047] Therefore, in this embodiment, the test condition module 1 is connected to the IGCT and is used to adjust the gate voltage, the voltage between the anode and cathode, and the junction temperature of the IGCT. Therefore, the test condition module 1 can construct a test environment under different operating conditions to test the breakdown characteristics of the IGCT under different operating conditions. In addition, in the present invention, the device state monitoring module 2 is used to obtain the change in the IGCT's on-state current, the IGCT's crack characteristic signal, and the change in the IGCT's local hotspot temperature within a preset time interval; the breakdown prediction module 3 is connected to the device state monitoring module 2 and is used to generate a breakdown characteristic test result based on the change in the on-state current, the crack characteristic signal, and the change in the local hotspot temperature. Thus, the breakdown characteristic test result corresponding to the test environment is obtained, and the breakdown characteristic test of the IGCT is realized.

[0048] In one embodiment, the breakdown prediction module 3 is specifically used to determine that the IGCT has a precursor risk of breakdown when the change in the on-current is greater than a preset current change threshold, and the crack characteristic signal indicates that there is a crack in the IGCT package, and the change in the local hot spot temperature is greater than a preset temperature change threshold, and generate a breakdown characteristic test result.

[0049] It should be noted that when the change in on-current is greater than a preset current change threshold, it indicates that the on-current has a significant increasing trend. When the change in the local hotspot temperature is greater than a preset temperature change threshold, it indicates that the local hotspot temperature has a significant increasing trend. Therefore, when the on-current has a significant increasing trend, the local hotspot temperature has a significant increasing trend, and when the collected crack characteristic signal indicates that there is a crack in the IGCT package, it indicates that under the current operating conditions, the IGCT has a precursor risk of breakdown and is prone to breakdown. Therefore, the test is stopped and a breakdown characteristic test result is generated. The breakdown characteristic result may include risk information used to feedback that the IGCT has a precursor risk of breakdown.

[0050] It is understandable that the crack characteristic signals collected when there is a crack and when there is no crack in the IGCT package are different. Therefore, after obtaining the crack characteristic signal, it is possible to determine whether there is a crack in the IGCT package by comparing or analyzing the crack characteristic signal.

[0051] It is understandable that the current change threshold and the temperature change threshold can be obtained through theoretical calculation, or through experiments on IGCT, or based on experience.

[0052] In one embodiment, the device state monitoring module 2 includes a current acquisition unit, a temperature acquisition unit, and a crack signal acquisition unit. The current acquisition unit is connected to the IGCT and is used to acquire the IGCT's on-state current and calculate the change in the IGCT's on-state current. The temperature acquisition unit is used to acquire the IGCT's local hotspot temperature and calculate the change in the local hotspot temperature. The crack signal acquisition unit is used to acquire crack signature signals from the IGCT package. In one example, the temperature acquisition unit can be an infrared thermal imager, and the crack signal acquisition unit can be an acoustic emission sensor.

[0053] In one embodiment, see Figure 1-Figure 2 The test condition module 1 includes: a first power supply unit 11, a second power supply unit 12 and a junction temperature control unit 13; the first power supply unit 11 is respectively connected to the anode and cathode of the IGCT, and is used to obtain and apply a corresponding first target voltage to the IGCT according to the first target voltage parameter; the second power supply unit 12 is connected to the gate of the IGCT, and is used to obtain and apply a corresponding second voltage to the gate of the IGCT according to the second target voltage parameter; the junction temperature control unit 13 is used to obtain and adjust the junction temperature value of the IGCT according to the target junction temperature parameter.

[0054] It should be noted that the first target voltage parameter, the second target voltage parameter, and the target junction temperature parameter can be set accordingly based on the actual test conditions. Different operating conditions correspond to different first target voltage parameters, second target voltage parameters, and target junction temperature parameters. In actual applications, the corresponding first target voltage parameters, second target voltage parameters, and target junction temperature parameters can be set based on the test requirements of different operating conditions.

[0055] In this embodiment, the first power supply unit 11 obtains a first target voltage parameter and generates a first target voltage corresponding to the first target voltage parameter. The first target voltage is applied between the anode and cathode of the IGCT. The second power supply unit 12 obtains a second target voltage parameter and generates a second target voltage corresponding to the second target voltage parameter. The second target voltage is applied to the gate of the IGCT. The junction temperature control unit 13 obtains a target junction temperature parameter and adjusts the junction temperature of the IGCT based on the target junction temperature parameter so that the junction temperature of the IGCT meets the test requirements. Thus, the test operating conditions are established by the first power supply unit 11, the second power supply unit 12, and the junction temperature control unit 13.

[0056] In one embodiment, the first power supply unit 11 may be a multi-level programmable power supply. The first target voltage parameters may include voltage amplitude, dv / dt, waveform shape, repetition frequency, and duration. The waveform shape may be a sine wave, a square wave, or a triangular wave. The multi-level programmable power supply may generate a voltage waveform corresponding to the first target voltage parameters and apply it to both ends (i.e., the anode and cathode) of the IGCT.

[0057] In one embodiment, the target junction temperature parameters may include: a target junction temperature value and a target junction temperature change rate.

[0058] In one embodiment, the junction temperature control unit 13 adjusts the junction temperature of the IGCT by heating the water channel or the metal block. For example, the junction temperature control unit 13 may utilize a heater that automatically adjusts its heating power based on a set temperature target value and temperature change rate. The heater heats the IGCT by adjusting the water temperature in the heating water channel or the temperature of the metal block, thereby bringing the junction temperature of the IGCT to the desired junction temperature under the test conditions.

[0059] In one embodiment, the second power supply unit 12 is connected to the IGCT driver board, which is in turn connected to the gate of the IGCT. In this embodiment, the second power supply unit 12 regulates the gate voltage by supplying power to the IGCT driver board, thereby regulating the output voltage of the IGCT driver board. This achieves high-voltage isolation when regulating the gate voltage of the IGCT, further enhancing test safety.

[0060] In one embodiment, see Figure 1-Figure 2, further comprising a current limiting protection module 4; the current limiting protection module 4 is connected in series in the loop between the first power supply unit 11 and the IGCT;

[0061] The breakdown prediction module 3 is connected to the current limiting protection module 4 and is used to start the current limiting protection module 4 to limit the current value of the loop when it is determined that there is a risk of breakdown precursor of the IGCT.

[0062] It should be noted that when it is determined that there is a risk of precursor breakdown of the IGCT, the current limiting protection module 4 is started to reduce the loop current of the loop between the first power supply unit 11 and the IGCT, thereby avoiding the risk of IGCT breakdown causing damage to the loop, further improving the safety of the test.

[0063] In one embodiment, the current limiting protection module 4 includes a current limiting element and an electronic switch device;

[0064] The current limiting element is connected in series with the electronic switching device and in series in the circuit;

[0065] The breakdown prediction module 3 is connected to the electronic switch device and is used to disconnect the electronic switch device when it is determined that the IGCT has a risk of breakdown precursor, so that the current limiting element is connected to the circuit.

[0066] It should be noted that under normal circumstances, the electronic switching device is in a closed state, thereby bypassing the current limiting element. When it is determined that there is a risk of IGCT breakdown, the electronic switching device is disconnected and the current limiting element can be connected to the circuit to limit the current value in the circuit.

[0067] In one embodiment, see Figure 3 , the current limiting element can be a reactor.

[0068] In one embodiment, see Figure 3 , the electronic switching device can be an IGBT device.

[0069] In one embodiment, see Figure 1-Figure 2 , also includes: Machine Learning Module 5;

[0070] The device status monitoring module 2 is connected to the machine learning module 5 and is also used to collect the gate voltage, junction temperature and voltage between the anode and cathode of the IGCT, and transmit the voltage between the anode and cathode, gate voltage, junction temperature, change in on-state current, crack characteristic signal, change in local hot spot temperature and breakdown characteristic test results to the machine learning module 5;

[0071] The machine learning module 5 is used to construct and train a prediction model with the gate voltage, junction temperature value and voltage between the anode and cathode of the IGCT as input and the breakdown characteristic test result as output, based on the voltage between the anode and cathode, the gate voltage, the junction temperature value, the change in on-current, the crack characteristic signal, the change in local hot spot temperature and the breakdown characteristic test result.

[0072] It should be noted that the machine learning module 5 constructs a neural network model and uses the gate voltage, junction temperature value and voltage between the anode and cathode of the IGCT, and takes the voltage between the anode and cathode, gate voltage, junction temperature value, change in on-current, crack characteristic signal, change in local hot spot temperature and breakdown characteristic test results as training data to train the neural network model, thereby obtaining a prediction model with the gate voltage, junction temperature value and voltage between the anode and cathode of the IGCT as input and the breakdown characteristic test results as output, thereby obtaining breakdown boundary data under different voltage waveforms, different device junction temperatures and different gate supply voltages.

[0073] It can be understood that, based on the aforementioned embodiments, the gate voltage, junction temperature value and voltage between the anode and cathode of the IGCT affect the change in the on-state current, the crack characteristic signal and the change in the local hotspot temperature, and the change in the on-state current, the crack characteristic signal and the change in the local hotspot temperature affect the breakdown characteristic test results. Therefore, the neural network model is trained using training data so that the neural network model can feedback the mapping relationship between the gate voltage, junction temperature value and voltage between the anode and cathode of the IGCT and the breakdown characteristic test results, so that the trained neural network model can predict the breakdown precursor risk (i.e., breakdown boundary data) of the IGCT based on the input gate voltage, junction temperature value and voltage between the anode and cathode of the GCT.

[0074] It is understandable that this embodiment uses the gate voltage, junction temperature, and anode-cathode voltage of the IGCT under various operating conditions, as well as the corresponding changes in on-current, crack characteristic signals, changes in local hotspot temperature, and breakdown characteristic test results under various operating conditions as training data to train the constructed neural network model, so that the trained neural network model can predict the breakdown precursor risk (i.e., breakdown boundary data) of the IGCT under different operating conditions. Therefore, in actual operation, for engineering operation conditions, the operating parameters of the device (i.e., the gate voltage, junction temperature, and anode-cathode voltage of the IGCT) are tested in real time, combined with the breakdown boundary determined by the neural network and the reserved margin. When the operating parameters are close to the operating boundary, a breakdown risk is determined to exist and a breakdown alarm is output.

[0075] In one embodiment, the machine learning module 5 can also be connected to the first power supply unit 11, the second power supply unit 12, and the junction temperature control unit 13 to obtain the first target voltage, the second target voltage, and the junction temperature adjustment information output by the first power supply unit 11, the second power supply unit 12, and the junction temperature control unit 13 as training data for the neural network model to further enrich the training data samples and improve the training accuracy of the neural network model.

[0076] The above describes a test platform for the breakdown characteristics of an IGCT in an embodiment of the present application. The following describes a test method applied to the test platform for the breakdown characteristics of an IGCT.

[0077] See also Figure 4 , an embodiment of the present invention provides a method for testing the breakdown characteristics of an IGCT, comprising:

[0078] 101. The test condition module adjusts the gate voltage, the voltage between the anode and cathode, and the junction temperature of the IGCT;

[0079] 102. The device state monitoring module obtains a change in the on-state current of the IGCT, a crack characteristic signal of the IGCT, and a change in the local hot spot temperature of the IGCT within a preset time interval;

[0080] 103. The breakdown prediction module generates a breakdown characteristic test result according to the change in the conduction current, the crack characteristic signal, and the change in the local hot spot temperature.

[0081] In this embodiment, the test condition module adjusts the gate voltage, the voltage between the anode and the cathode, and the junction temperature of the IGCT to realize the construction of the test environment; the device state monitoring module obtains the change in the on-state current of the IGCT, the crack characteristic signal of the IGCT, and the change in the local hot spot temperature of the IGCT within a preset time interval to realize the monitoring of the state of the IGCT; the breakdown prediction module generates a breakdown characteristic test result based on the change in the on-state current, the crack characteristic signal, and the change in the local hot spot temperature, thereby obtaining the breakdown characteristic test result corresponding to the test environment and realizing the test of the breakdown characteristic of the IGCT.

[0082] In one embodiment, step 103 specifically includes:

[0083] When the change in on-current is greater than a preset current change threshold, and the crack characteristic signal indicates that there is a crack in the IGCT package, and the change in local hot spot temperature is greater than a preset temperature change threshold, the breakdown prediction module determines that the IGCT has a precursor risk of breakdown and generates a breakdown characteristic test result.

[0084] In one embodiment, it further includes:

[0085] 104. When it is determined that the IGCT has a precursory risk of breakdown, the breakdown prediction module activates the current limiting protection module to limit the current value of the loop between the first power supply unit and the IGCT.

[0086] In one embodiment, it further includes:

[0087] 105. The device status monitoring module collects the gate voltage, junction temperature, and voltage between the anode and cathode of the IGCT, and transmits the voltage between the anode and cathode, gate voltage, junction temperature, change in on-state current, crack characteristic signal, change in local hot spot temperature, and breakdown characteristic test results to the machine learning module;

[0088] 106. The machine learning module builds and trains a prediction model based on the gate voltage, junction temperature, and voltage between the anode and cathode of the IGCT, and the voltage between the anode and cathode, gate voltage, junction temperature, change in on-current, crack characteristic signal, change in local hot spot temperature, and breakdown characteristic test results. The model takes the gate voltage, junction temperature, and voltage between the anode and cathode of the IGCT as input and the breakdown characteristic test results as output.

[0089] In one embodiment, the test condition module includes: a first power supply unit, a second power supply unit, and a junction temperature control unit. Step 101 specifically includes:

[0090] 101. A first power supply unit obtains and applies a corresponding first target voltage to the IGCT according to a first target voltage parameter;

[0091] 1012. The second power supply unit obtains and applies a corresponding second voltage to the gate of the IGCT according to the second target voltage parameter;

[0092] 1013. The junction temperature control unit obtains and adjusts the junction temperature value of the IGCT according to the target junction temperature parameter.

[0093] The test platform and method provided by the present invention can realize breakdown characteristic testing under different voltage waveforms, different device junction temperatures, and different gate supply voltages. It can also use a neural network to train test data through a machine learning module, predict the breakdown characteristics under different working conditions, and generate derating recommendations, providing a test basis for the breakdown characteristics in actual engineering applications.

[0094] It is understandable that Figures 1 to 3 Any technical feature in any corresponding embodiment is also applicable to the embodiments of this application. Figure 4 The similarities in the corresponding embodiments will not be repeated here.

[0095] Those skilled in the art will clearly understand that, for the convenience and brevity of description, the specific working processes of the systems, devices and units described above can refer to the corresponding processes in the aforementioned method embodiments and will not be repeated here.

[0096] In the several embodiments provided in this application, it should be understood that the disclosed platform and method can be implemented in other ways. For example, the platform embodiments described above are merely schematic. For example, the division of modules or units is only a logical function division. In actual implementation, there may be other division methods, such as multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed can be an indirect coupling or communication connection through some interface, device or unit, which can be electrical, mechanical or other forms.

[0097] Units described as separate components may or may not be physically separate, and components shown as units may or may not be physical units, that is, they may be located in one place or distributed across multiple network units. Some or all of these units may be selected to achieve the purpose of this embodiment according to actual needs.

[0098] In addition, the functional units in various embodiments of the present invention may be integrated into a single processing unit, or each functional unit may exist as a separate physical unit, or two or more functional units may be integrated into a single processing unit. The aforementioned integrated units may be implemented in the form of hardware or software functional units.

[0099] If the integrated unit is implemented as a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the present invention, or the portion that contributes to the prior art, or all or part of the technical solution, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions for causing a computer device (which can be a personal computer, server, or network device, etc.) to execute all or part of the steps of the various embodiments of the method of the present invention. The aforementioned storage medium includes various media that can store program code, such as USB flash drives, mobile hard drives, read-only memories (ROMs), random access memories (RAMs), magnetic disks, or optical disks.

[0100] The terms "first," "second," "third," "fourth," and the like (if any) in the specification of the present application and the accompanying drawings are used to distinguish similar objects and are not necessarily used to describe a particular order or precedence. It should be understood that the terms used in this manner are interchangeable where appropriate, so that the embodiments of the present application described herein can, for example, be implemented in an order other than those illustrated or described herein. In addition, the terms "including" and "having," and any variations thereof, are intended to cover non-exclusive inclusions. For example, a process, method, system, product, or apparatus comprising a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units that are not explicitly listed or that are inherent to such process, method, product, or apparatus.

[0101] The above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit the same. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the various embodiments of the present invention.

Claims

1. A test platform for IGCT breakdown characteristics, characterized in that: include: Test condition module, device status monitoring module and breakdown prediction module; The test condition module is connected to the IGCT and is used to adjust the gate voltage, the voltage between the anode and the cathode, and the junction temperature of the IGCT; The device state monitoring module is connected to the IGCT and is used to obtain a change in the on-state current of the IGCT, a crack characteristic signal of the IGCT, and a change in the local hot spot temperature of the IGCT within a preset time interval; The breakdown prediction module is connected to the device state monitoring module and is used to generate a breakdown characteristic test result according to the change in the on-current, the crack characteristic signal, and the change in the local hot spot temperature.

2. The test platform according to claim 1, characterized in that: The breakdown prediction module is specifically configured to determine that the IGCT has a precursor risk of breakdown when the change in the on-current is greater than a preset current change threshold, the crack characteristic signal indicates that there is a crack in the IGCT package, and the change in the local hot spot temperature is greater than a preset temperature change threshold, and generate a breakdown characteristic test result.

3. The test platform according to claim 2, characterized in that: It also includes a current limiting protection module; the current limiting protection module is connected in series in the loop between the first power supply unit and the IGCT; The breakdown prediction module is connected to the current limiting protection module, and is used to start the current limiting protection module to limit the current value of the loop when it is determined that the IGCT has a precursory risk of breakdown.

4. The test platform according to claim 3, characterized in that: The current limiting protection module includes a current limiting element and an electronic switch device; The current limiting element is connected in series with the electronic switch device and is connected in series in the loop; The breakdown prediction module is connected to the electronic switch device and is used to disconnect the electronic switch device when it is determined that the IGCT has a precursory risk of breakdown, so that the current limiting element is connected to the circuit.

5. The test platform according to claim 4, characterized in that: The test condition module includes: a first power supply unit, a second power supply unit and a junction temperature control unit; The first power supply unit is connected to the anode and cathode of the IGCT respectively, and is used to obtain and apply a corresponding first target voltage to the IGCT according to a first target voltage parameter; The second power supply unit is connected to the gate of the IGCT, and is used to obtain and apply a corresponding second voltage to the gate of the IGCT according to a second target voltage parameter; The junction temperature control unit is used to obtain and adjust the junction temperature value of the IGCT according to the target junction temperature parameter.

6. The test platform according to claim 1, characterized in that: Also includes: Machine Learning Module; The device state monitoring module is connected to the machine learning module and is further used to collect the gate voltage, junction temperature, and voltage between the anode and cathode of the IGCT, and transmit the voltage between the anode and cathode, the gate voltage, the junction temperature, the change in the on-state current, the crack characteristic signal, the change in the local hot spot temperature, and the breakdown characteristic test result to the machine learning module; The machine learning module is used to construct and train a prediction model with the gate voltage, junction temperature value and voltage between the anode and cathode of the IGCT as input and the breakdown characteristic test result as output, based on the voltage between the anode and cathode, the gate voltage, the junction temperature value, the change in the on-state current, the crack characteristic signal, the change in the local hot spot temperature and the breakdown characteristic test result.

7. A method for testing the breakdown characteristics of an IGCT, characterized in that: Applied to the test platform according to any one of claims 1 to 6, the method comprises: The test condition module adjusts the gate voltage, the voltage between the anode and the cathode, and the junction temperature of the IGCT; The device state monitoring module obtains the change in the on-state current of the IGCT, the crack characteristic signal of the IGCT, and the change in the local hot spot temperature of the IGCT within a preset time interval; The breakdown prediction module generates a breakdown characteristic test result according to the change in the on-current, the crack characteristic signal, and the change in the local hot spot temperature.

8. The testing method according to claim 7, characterized in that: The breakdown prediction module generates a breakdown characteristic test result according to the change in the on-state current, the crack characteristic signal, and the change in the local hotspot temperature, including: When the change in the on-current is greater than a preset current change threshold, and the crack characteristic signal indicates that there is a crack in the IGCT package, and the change in the local hot spot temperature is greater than a preset temperature change threshold, the breakdown prediction module determines that the IGCT has a precursor risk of breakdown and generates a breakdown characteristic test result.

9. The testing method according to claim 8, characterized in that: Also includes: When it is determined that the IGCT has a precursory risk of breakdown, the breakdown prediction module starts the current limiting protection module to limit the current value of the loop between the first power supply unit and the IGCT.

10. The testing method according to claim 7, wherein: Also includes: The device state monitoring module collects the gate voltage, junction temperature, and voltage between the anode and cathode of the IGCT, and transmits the voltage between the anode and cathode, the gate voltage, the junction temperature, the change in the on-state current, the crack characteristic signal, the change in the local hot spot temperature, and the breakdown characteristic test result to the machine learning module; The machine learning module constructs and trains a prediction model based on the gate voltage, junction temperature value, and voltage between the anode and cathode of the IGCT, and the voltage between the anode and cathode, the gate voltage, the junction temperature value, the change in the on-current, the crack characteristic signal, the change in the local hot spot temperature, and the breakdown characteristic test result, with the gate voltage, junction temperature value, and voltage between the anode and cathode of the IGCT as input and the breakdown characteristic test result as output.

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