Low-sheet-resistance tungsten-copper electronic paste, preparation method thereof and application of low-sheet-resistance tungsten-copper electronic paste in preparation of metal electrode

Abstract

The invention discloses low-sheet-resistance tungsten-copper electronic paste, a preparation method thereof and application of the low-sheet-resistance tungsten-copper electronic paste in preparation of metal electrodes, and belongs to the technical field of electronic materials. The low-square-resistance tungsten-copper electronic paste comprises the following components: tungsten metal powder, copper-based powder, an organic carrier, a solid adhesive and an additive, wherein the copper-based powder refers to powder which can be reduced by reducing gas to generate metal copper. The copper-based powder in the tungsten-copper electronic paste provided by the invention is converted into copper through reducing gas in high-temperature sintering, so that an electrical conduction network with a copper conductive path is formed, the conductivity of the paste is improved, and the square resistance value of the whole conductive film layer is reduced; the tungsten-copper electronic paste can be combined with ceramic in a high-temperature sintering mode so as to prepare a low-square-resistance metal electrode, and the conductivity of the product is obviously improved compared with that of traditional high-temperature co-fired ceramic system paste. The preparation method provided by the invention is relatively simple, and high-cost and large-scale transformation is not needed.

Description

Technical Field

[0001] The present invention belongs to the technical field of electronic materials, and in particular relates to a low-tungsten copper electronic paste, a preparation method thereof, and an application thereof in the preparation of metal electrodes. Background Art

[0002] Electronic paste is an important direction for the development of contemporary advanced electronic materials. It can form circuit patterns on the surface of multilayer co-fired ceramics by screen printing or additive manufacturing, and then achieve electrical connectivity through high-temperature sintering. The performance of electronic paste has a huge impact on the performance of the entire integrated circuit. At present, due to its high sintering temperature, high-temperature co-fired ceramic systems can only use high-melting-point metals such as tungsten and molybdenum, and the conductive properties of these metals are far inferior to those of metals such as silver and copper. This results in the application of high-temperature co-fired ceramic systems in high-frequency, high-power devices and other fields. Therefore, there is an urgent need to improve the conductivity of electronic pastes in high-temperature co-fired ceramic systems. Summary of the Invention

[0003] In view of this, it is necessary for the present invention to provide a low-square-resistance tungsten-copper electronic paste and a preparation method thereof. The tungsten-copper electronic paste can be combined with ceramics by high-temperature sintering to prepare a low-square-resistance metal electrode. The conductivity of this product is significantly improved compared to the traditional high-temperature co-fired ceramic system paste.

[0004] In order to achieve the above object, the present invention adopts the following technical solutions:

[0005] The first object of the present invention is to provide a low-square-resistance tungsten-copper electronic paste. The tungsten-copper-based electronic paste comprises the following components in parts by mass:

[0006] 40-90 parts of tungsten metal powder,

[0007] 5-60 parts of copper-based powder,

[0008] 5-40 parts of organic carrier,

[0009] 0-5 parts of solid adhesive,

[0010] 0-5 parts of additives;

[0011] As a preferred technical solution, the copper-based powder refers to a powder that can be reduced to metallic copper by a reducing gas. Further preferably, the copper-based powder is copper oxide powder or cuprous oxide powder; the copper-based powder has a D50 of 20 nm to 15 μm, and the powder shape is spherical, quasi-spherical, flaky, or irregular.

[0012] As a preferred technical solution, the D50 of the tungsten metal powder is 20nm to 15um, and the powder shape is spherical, quasi-spherical, flaky or irregular.

[0013] As a preferred technical solution, the organic carrier includes a polymer resin and an organic solvent. Further, the polymer resin is at least one of epoxy resin, ethyl cellulose resin, polyvinyl butyral resin, polyvinyl alcohol resin, polyacrylic resin, polycarbonate resin, phenolic resin, and polyurethane resin; and the organic solvent is at least one of ethanol, ethyl acetate, acetone, butanone, isopropyl alcohol, n-butanol, isobutyl alcohol, butyl acetate, toluene, xylene, trimethylbenzene, terpineol, dimethyl phthalate, dibutyl phthalate, diethylene glycol butyl ether, ethylene glycol butyl ether, ethylene glycol butyl ether acetate, diethylene glycol butyl ether acetate, ethylene glycol phenyl ether, propylene glycol methyl ether acetate, dimethylethanolamine, triethanolamine, turpentine, N,N-dimethylformamide, N,N-dimethylacetamide, dimethyl sulfoxide, and DBE.

[0014] As a preferred technical solution, the solid adhesive is at least one of glass, oxide, and inorganic matter; wherein: the glass is at least one of Ca-Si based glass, B-Si based glass, Ca-B-Si based glass, Li-Si based glass, and Mg-Si based glass; the oxide is a metal oxide or a non-metal oxide, including aluminum oxide, silicon dioxide, etc.; the inorganic matter includes inorganic salts, etc.

[0015] As a preferred technical solution, the additive is a dispersant, a leveling agent or a thixotropic agent.

[0016] A second object of the present invention is to provide a method for preparing the low-square-resistance tungsten-copper electronic paste as described in the first object above, comprising the following steps:

[0017] The tungsten metal powder, copper-based powder, organic carrier, solid adhesive and additive are mixed evenly according to a proportion to form an initial tungsten-copper-based electronic paste mixed system; the initial tungsten-copper-based electronic paste mixed system is rolled by a three-roll mixer to form a low-square-resistance tungsten-copper electronic paste.

[0018] A third object of the present invention is to provide a method for preparing a low-square-resistance metal electrode using the low-square-resistance tungsten-copper electronic paste as described in the first object. The method comprises the following steps:

[0019] Low square resistance tungsten copper based electronic paste can be used to print circuit patterns on raw ceramic sheets by screen printing or additive manufacturing to form ceramic substrates with circuit patterns with line resolution ≥10um;

[0020] The ceramic substrate is placed in an atmosphere sintering furnace and sintered at a temperature of 1000-2000°C in a protective atmosphere. After sintering, the temperature is lowered. When the temperature drops to 400-600°C, a reducing gas is introduced into the atmosphere sintering furnace and the temperature is further lowered to room temperature to obtain a low-square-resistance metal electrode. Preferably, the protective atmosphere is an inert gas such as nitrogen or argon; and the reducing gas is hydrogen or carbon monoxide.

[0021] The present invention has the following beneficial effects:

[0022] The copper-based powder in the tungsten-copper electronic paste of the present invention is converted into copper by reducing gas during high-temperature sintering, thereby forming an electrical conduction network with copper conductive paths, thereby improving the conductive performance of the paste and reducing the square resistance of the overall conductive film layer; the polymer resin in the organic carrier in the paste can improve the printing performance of the paste; the solid adhesive component uses oxides and glass to reduce the sintering temperature of the overall material, and through high-temperature sintering, the electronic paste forms a good bonding force with the ceramic substrate to ensure that the conductive film layer does not fall off after sintering; the present invention provides a new idea and method for reducing the square resistance of the high-temperature co-fired ceramic system, and the related preparation process can also be compatible with the process of the existing high-temperature co-fired ceramic system. The preparation method is relatively simple and does not require high-cost and large-scale modifications. The square resistance of the low-square-resistance tungsten-copper electronic paste of the present invention is significantly lower than that of traditional high-temperature co-fired electronic pastes such as tungsten. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 Schematic diagram of the low-square-resistance tungsten-copper electronic paste of Example 1;

[0024] Figure 2 Schematic diagram of the printing effect of low-square-resistance tungsten-copper electronic paste in Example 1. DETAILED DESCRIPTION

[0025] The embodiments of the present invention are described in detail below. The embodiments described below are exemplary and are only used to explain the present invention, and are not to be construed as limiting the present invention.

[0026] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art of the present invention. The terms used in the specification of the present invention herein are only for the purpose of describing specific embodiments and are not intended to limit the present invention.

[0027] The first aspect of the present invention discloses a method for preparing a low-sheet-resistance tungsten-copper electronic paste. This method is primarily targeted at low-sheet-resistance electronic paste systems for use in high-temperature co-fired ceramic systems. The present invention utilizes tungsten powder and copper-containing powder, blended with an organic carrier and a solid binder component, to form the low-sheet-resistance tungsten-copper electronic paste.

[0028] The entire low-resistance tungsten-copper electronic paste preparation process is simple and fast, and no special powder processing steps such as coating or forming special structures are required.

[0029] In the present invention, copper-based powder refers to copper-containing powder that can be reduced to metallic copper in a reducing atmosphere. Specific examples include but are not limited to copper oxide powder, cuprous oxide powder, and the like.

[0030] The method for preparing the low-square-resistance tungsten-copper electronic paste described in the present invention mainly comprises the following steps:

[0031] Functional phase powder grinding

[0032] The specific grinding method is to place tungsten powder or copper-based powder, grinding liquid and grinding balls in a grinding container according to a certain formula ratio and grind for a certain time. Preferably, the formula ratio can be 1:1:1.

[0033] Preparation of organic solvents

[0034] The organic solvent is a mixed solvent, and the specific preparation method is to mix one or more solvents according to a certain formula ratio through sufficient mechanical stirring.

[0035] Dissolution of organic carrier

[0036] The specific preparation method is to dissolve the matrix polymer resin in a mixed solvent, and then heat and stir until a transparent solution or colloid is obtained with no obvious insoluble matter. The concentration of the organic carrier is between 0 wt% and 50 wt%, preferably 5 wt%.

[0037] Preparation of organic mixed carrier

[0038] The specific preparation method is to mix one or more organic carriers in a certain ratio by mechanical stirring or heating and stirring. Preferably, the ratio can be 1:1.

[0039] Preparation of inorganic mixed system

[0040] Specifically, one or more inorganic substances are mixed in a certain ratio through sufficient mechanical stirring.

[0041] Preparation of glass mixing system

[0042] Specifically, one or more glasses are mixed according to a certain formula ratio through sufficient mechanical stirring, then heated to above 1200°C, quenched, and finally ground into a powdered glass mixture system.

[0043] Preparation of solid bonding phase components

[0044] Specifically, one or more inorganic or glass mixtures are mixed in a specific proportion, mechanically stirred, and ground to produce a powdered solid adhesive phase component with a specific particle size distribution (20 nm to 15 μm). Preferably, the particle size of the solid adhesive phase component can be 500 nm.

[0045] Preparation of initial tungsten-copper based electronic paste mixture system

[0046] Specifically, tungsten metal powder, copper-based powder, one or more organic carriers, one or more solid adhesive phase components, and additives are mixed in a certain formula ratio through sufficient mechanical stirring, and then rolled into a paste-like mixed system with a certain viscosity using a three-roll mill, i.e., low-resistance tungsten-copper electronic paste.

[0047] A second aspect of the present invention provides a low-square-resistance tungsten-copper electronic paste, which is prepared by the preparation method described in the first aspect of the present invention.

[0048] Furthermore, the electronic circuits printed in the low-square-resistance tungsten-copper electronic paste can achieve a minimum square resistance of about 7 milliohms / □ after sintering. Compared with tungsten-based electronic paste (~15 milliohms / □), the conductivity is significantly improved, which will be detailed in the specific embodiments below.

[0049] The present invention is described below by means of specific examples. It should be noted that the following specific examples are for illustrative purposes only and do not limit the scope of the present invention in any way. In addition, unless otherwise specified, methods without specific conditions or steps are conventional methods, and the reagents and materials used are all commercially available.

[0050] Example 1 Preparation and Application Verification of Low Square Resistance Tungsten-Copper Electronic Paste 1

[0051] Weigh 100g of tungsten powder, 100g of pure water, and 100g of grinding balls into a ball mill, mill at a speed of 100r / min for 1h, and then filter and dry to obtain tungsten metal powder;

[0052] Weigh 100 g of copper oxide powder, 100 g of pure water, and 100 g of grinding balls into a ball mill, mill at a speed of 100 r / min for 1 h, and then filter and dry to obtain copper oxide powder;

[0053] Weigh 100 g of diethylene glycol butyl ether and 100 g of terpineol into a beaker and mechanically stir for 2 h to obtain a mixed solvent 1;

[0054] Weigh 15 g of polyvinyl alcohol and add it to 85 g of mixed solvent 1, heat and stir at 70° C. for 4 h to fully dissolve, to obtain organic vehicle 1;

[0055] Weigh 20 g of ethyl cellulose and add it to 80 g of xylene. Heat and stir at 50°C for 4 h to fully dissolve the mixture to obtain organic carrier 2.

[0056] Weigh 100 g of organic carrier 1 and 100 g of organic carrier 2, heat and stir at 50° C., and mix thoroughly to obtain an organic mixed carrier;

[0057] Weigh 100g of calcium carbonate and 60g of silicon dioxide, mix them uniformly using mechanical stirring, place the mixed powder in a crucible, heat to 1400°C, and then quench in water to obtain the initial Ca-Si-based glass system 1. Weigh 100g of the initial Ca-Si-based glass system 1 powder, 80g of pure water, and 80g of grinding balls into a ball mill, mill at 200 rpm for 1 hour, and then filter and dry to obtain the Ca-Si-based glass system 1 powder.

[0058] Weigh 83g of sodium carbonate and 60g of silicon dioxide, mix them uniformly using mechanical stirring, place the mixed powder in a crucible, heat to 1400°C, and then quench in water to obtain the initial Si-based glass mixed system 2. Weigh 100g of the initial Si-based glass mixed system 2 powder, 80g of pure water, and 80g of grinding balls into a ball mill, mill at 200 rpm for 1 hour, and then filter and dry to obtain the Si-based glass system 2 powder.

[0059] Weigh 100 g of Ca-Si based glass system 1 powder and 100 g of Si based glass system 2 powder, 200 g of pure water, and 200 g of grinding balls into a ball mill and mill at 200 rpm for 1 h. Then filter and dry to obtain a solid bonding phase component.

[0060] Weigh 40 g of tungsten metal powder, 40 g of copper oxide powder, 15 g of an organic mixed carrier, 4 g of a solid adhesive phase component, and 1 g of an organosilicon ether dispersant, and mechanically mix them at a speed of 200 r / min for 5 min to obtain 100 g of an initial tungsten-copper-based electronic paste mixed system 1;

[0061] 100g of the initial tungsten-copper-based electronic paste mixture system 1 was placed in a three-roll mill and rolled for 20 minutes to obtain a low-square-resistance tungsten-copper electronic paste 1, such as Figure 1 As shown;

[0062] The circuit pattern is printed on the green ceramic sheet by screen printing with low square resistance tungsten copper electronic paste. Figure 2As shown; then the green porcelain sheet with the pattern is dried, laminated and pressed to obtain the sample 1 to be fired;

[0063] Sample 1 was placed in an atmosphere sintering furnace, nitrogen was introduced, and the temperature was raised from room temperature to 600°C at a rate of 2°C / min, held for 2 hours, then raised to 1200°C at a rate of 2°C / min and held for 2 hours. The temperature was then lowered to 500°C at a rate of 2°C / min, the atmosphere was switched to hydrogen, and the temperature was then lowered to room temperature. This yielded a multilayer ceramic substrate 1. Testing revealed a sheet resistance of 8.5 milliohms / square.

[0064] Example 2 Preparation and Application Verification of Low Square Resistivity Tungsten-Copper Electronic Paste 2

[0065] Weigh 100g of tungsten powder, 100g of pure water, and 100g of grinding balls into a ball mill, mill at a speed of 100r / min for 1h, and then filter and dry to obtain tungsten metal powder;

[0066] Weigh 100 g of cuprous oxide powder, 100 g of pure water, and 100 g of grinding balls into a ball mill, mill at 100 rpm for 1 h, and then filter and dry to obtain cuprous oxide powder.

[0067] Weigh 100 g of N,N-dimethylformamide and 100 g of terpineol into a beaker and mechanically stir for 2 h to obtain mixed solvent 2;

[0068] Weigh 15 g of epoxy resin and add it to 85 g of mixed solvent 2. Heat and stir at 50°C for 4 h to fully dissolve the mixture to obtain organic vehicle 3.

[0069] Weigh 20 g of ethyl cellulose and add it to 80 g of toluene. Heat and stir at 50°C for 4 h to fully dissolve the mixture to obtain organic support 4.

[0070] Weigh 100 g of organic carrier 3 and 100 g of organic carrier 4, heat and stir at 50° C., and mix thoroughly to obtain an organic mixed carrier;

[0071] Weigh 62g of boric acid and 60g of silica, mix thoroughly using mechanical stirring, place the mixed powder in a crucible, heat to 1400°C, and then quench in water to obtain the initial B-Si-based glass system 1. Weigh 100g of the initial B-Si-based glass system 1 powder, 100g of ethanol, and 100g of grinding balls into a ball mill, mill at 200 rpm for 1 hour, and then filter and dry to obtain the B-Si-based glass system 1 powder.

[0072] 50 g of lithium carbonate, 104 g of silicon dioxide, 80 g of pure water, and 80 g of grinding balls were weighed and added to a ball mill, and the mixture was milled at a speed of 200 r / min for 1 h. The mixture was then filtered and dried to obtain an inorganic mixed system 1.

[0073] Weigh 100 g of B-Si based glass system 1 powder and 100 g of inorganic mixed system 1, 200 g of pure water, and 200 g of grinding balls into a ball mill and mill at 200 r / min for 1 h. Then filter and dry to obtain a solid adhesive phase component.

[0074] 36 g of tungsten metal powder, 44 g of cuprous oxide powder, 16 g of an organic mixed carrier, 3.5 g of a solid adhesive phase component, and 0.5 g of an organosilicon ether dispersant were weighed and mechanically mixed at a speed of 200 r / min for 5 min to obtain 100 g of an initial tungsten-copper-based electronic paste mixed system 2;

[0075] 100 g of the initial tungsten-copper-based electronic paste mixture system 2 was placed in a three-roll mill and rolled for 20 minutes to obtain a low-square-resistance tungsten-copper electronic paste 2;

[0076] A circuit pattern is printed on a green ceramic sheet using a low-square-resistance tungsten-copper electronic paste by screen printing; the green ceramic sheet with the pattern is then dried, laminated, and pressed to obtain a sample 2 to be fired;

[0077] Sample 2 was placed in an atmosphere sintering furnace, nitrogen was introduced, and the temperature was raised from room temperature to 600°C at a rate of 2°C / min, held for 2 hours, then raised to 1250°C at a rate of 2°C / min and held for 2 hours. The temperature was then lowered to 400°C at a rate of 2°C / min, the atmosphere was switched to hydrogen, and the temperature was then lowered to room temperature. This yielded a multilayer ceramic substrate 2. Testing revealed a sheet resistance of 7.0 milliohms / square.

[0078] Example 3 Preparation and Application Verification of Low Square Resistivity W-Cu Electronic Paste 3

[0079] Weigh 100g of tungsten powder, 100g of pure water, and 100g of grinding balls into a ball mill, mill at a speed of 200r / min for 1h, and then filter and dry to obtain tungsten metal powder;

[0080] Weigh 100 g of cuprous oxide powder, 100 g of pure water, and 100 g of grinding balls into a ball mill and mill at 200 rpm for 1 h. Then filter and dry to obtain cuprous oxide powder.

[0081] Weigh 100 g of diethylene glycol butyl ether and 100 g of turpentine in a beaker and mechanically stir for 2 h to obtain mixed solvent 3;

[0082] Weigh 10 g of polyurethane resin and add it to 90 g of mixed solvent 3, heat and stir at 50°C for 4 h to fully dissolve, and obtain organic vehicle 5;

[0083] Weigh 20 g of polyvinyl butyral resin and add it to 80 g of xylene. Heat and stir at 50°C for 4 h to fully dissolve the mixture, thereby obtaining an organic vehicle 6.

[0084] Weigh 100 g of organic carrier 5 and 100 g of organic carrier 6, heat and stir at 50° C., and mix thoroughly to obtain an organic mixed carrier;

[0085] 84g of magnesium carbonate and 60g of silicon dioxide were weighed and mixed uniformly using mechanical stirring. The mixed powder was placed in a crucible, heated to 1400°C, and then quenched in water to obtain the initial Mg-Si-based glass system 1. 100g of the initial Mg-Si-based glass system 1 powder, 100g of ethanol, and 100g of grinding balls were added to a ball mill and milled at 200 rpm for 1 hour. The mixture was then filtered and dried to obtain the Mg-Si-based glass system 1 powder.

[0086] Weigh 100g of calcium carbonate, 62g of boric acid, and 60g of silicon dioxide, mix thoroughly using mechanical stirring, place the mixed powder in a crucible, heat to 1400°C, and then quench in water to obtain the initial Ca-B-Si-based glass system 1. Weigh 100g of the initial Ca-B-Si-based glass system 1 powder, 80g of pure water, and 80g of grinding balls into a ball mill, mill at 200 rpm for 1 hour, and then filter and dry to obtain the Ca-B-Si-based glass system 1 powder.

[0087] Weigh 100 g of Mg-Si based glass system 1 powder and 100 g of Ca-B-Si based glass system 1 powder, 200 g of pure water, and 200 g of grinding balls into a ball mill and mill at 400 rpm for 1 h. Then filter and dry to obtain a solid bonding phase component.

[0088] Weigh 89.9 g of tungsten metal powder, 5 g of cuprous oxide powder, 0.1 g of a solid binder phase component, and 5 g of an organic mixed carrier, and mechanically mix them at a speed of 300 r / min for 10 min to obtain 100 g of an initial tungsten-copper-based electronic paste mixture system 3;

[0089] 100 g of the initial tungsten-copper-based electronic paste mixture system 3 was placed in a three-roll mill and rolled for 20 minutes to obtain a low-square-resistance tungsten-copper electronic paste 3;

[0090] A circuit pattern is printed on a green ceramic sheet using a low-square-resistance tungsten-copper electronic paste by screen printing; the green ceramic sheet with the pattern is then dried, laminated, and pressed to obtain a sample 3 to be fired;

[0091] The sample 3 to be fired was placed in an atmosphere sintering furnace, argon was introduced, and the temperature was raised from room temperature to 600°C at 2°C / min, kept at this temperature for 2 hours, and then raised to 1560°C at 2°C / min, kept at this temperature for 2 hours. The temperature was then lowered to 400°C at 2°C / min, switched to a carbon monoxide atmosphere, and then cooled to room temperature to obtain a multilayer ceramic substrate 3. After testing, the square resistance was

[0092] Comparative Example 1 (Using Tungsten-Copper Alloy Powder)

[0093] This comparative example 1 is substantially the same as Example 2, except that:

[0094] S': Modify "weigh 36g of tungsten metal powder and 44g of cuprous oxide powder" to "weigh 80g of tungsten-copper alloy powder containing 55% copper".

[0095] S": Place the sample to be fired in an atmosphere sintering furnace, introduce nitrogen and hydrogen mixed gas (5%), heat it from room temperature to 600℃ at 2℃ / min, keep it warm for 2h, then heat it to 1250℃ at 2℃ / min, keep it warm for 2h. Then cool it to 400℃ at 2℃ / min, and then cool it to room temperature to obtain a multilayer ceramic substrate 4. After testing, the square resistance is

[0096] Analysis of the results of Comparative Example 1: Since Comparative Example 1 adopts the tungsten-copper alloy powder route, when the sintering temperature is above the melting point of copper, copper loss is serious, resulting in poor effect of reducing square resistance.

[0097] The technical features of the above-mentioned embodiments can be combined arbitrarily. In order to make the description concise, not all possible combinations of the technical features in the above-mentioned embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0098] The above-described embodiments merely illustrate several implementations of the present invention, and while their descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the patent. It should be noted that a person skilled in the art would be able to make numerous variations and improvements without departing from the spirit of the present invention, all of which fall within the scope of protection of the present invention. Therefore, the scope of protection of the patent for this invention shall be determined by the appended claims.

Claims

1. A low square resistance tungsten copper electronic paste, characterized by: The tungsten-copper-based electronic paste comprises the following components in parts by mass: 40-90 parts of tungsten metal powder, 5-60 parts of copper-based powder, 5-40 parts of organic carrier, 0-5 parts of solid adhesive, 0-5 parts of additives; The copper-based powder refers to a powder that can be reduced to generate metallic copper by a reducing gas.

2. The low-square-resistance tungsten-copper electronic paste according to claim 1, characterized in that: The copper-based powder is copper oxide powder or cuprous oxide powder.

3. The low-square-resistance tungsten-copper electronic paste according to claim 1, characterized in that: The organic carrier includes a polymer resin and an organic solvent.

4. The low-square-resistance tungsten-copper electronic paste according to claim 3, characterized in that: The polymer resin is at least one of epoxy resin, ethyl cellulose resin, polyvinyl butyral resin, polyvinyl alcohol resin, polyacrylic resin, polycarbonate resin, phenolic resin, and polyurethane resin; the organic solvent is at least one of ethanol, ethyl acetate, acetone, butanone, isopropyl alcohol, n-butanol, isobutyl alcohol, butyl acetate, toluene, xylene, trimethylbenzene, terpineol, dimethyl phthalate, dibutyl phthalate, diethylene glycol butyl ether, ethylene glycol butyl ether, ethylene glycol butyl ether acetate, diethylene glycol butyl ether acetate, ethylene glycol phenyl ether, propylene glycol methyl ether acetate, dimethylethanolamine, triethanolamine, turpentine, N,N-dimethylformamide, N,N-dimethylacetamide, dimethyl sulfoxide, and DBE.

5. The low-square-resistance tungsten-copper electronic paste according to claim 1, characterized in that: The solid adhesive is at least one of glass, oxide, and inorganic matter.

6. The low-square-resistance tungsten-copper electronic paste according to claim 5, characterized in that: The glass is at least one of Ca-Si based glass, B-Si based glass, Ca-B-Si based glass, Li-Si based glass and Mg-Si based glass.

7. The low-square-resistance tungsten-copper electronic paste according to claim 1, characterized in that: The additive is a dispersant, a leveling agent or a thixotropic agent.

8. The method for preparing the low-square-resistance tungsten-copper electronic paste according to any one of claims 1 to 7, wherein: The following steps are involved: The tungsten metal powder, copper-based powder, organic carrier, solid adhesive and additive are uniformly mixed according to a proportion to form an initial tungsten-copper-based electronic paste mixed system; the initial tungsten-copper-based electronic paste mixed system is rolled to form a low-square-resistance tungsten-copper electronic paste.

9. Use of the low-square-resistance tungsten-copper electronic paste according to any one of claims 1 to 7 in the preparation of a low-square-resistance metal electrode, characterized in that: The method for preparing the low-square-resistance metal electrode comprises the following steps: Printing a circuit pattern on a green ceramic sheet using the low-square-resistance tungsten-copper electronic paste to obtain a ceramic substrate; The ceramic substrate is placed in an atmosphere sintering furnace and sintered at a temperature of 1000-2000°C in a protective atmosphere. After sintering, the temperature is lowered. When the temperature drops to 400-600°C, reducing gas is introduced into the atmosphere sintering furnace and the temperature is continued to drop to room temperature to obtain a low-square-resistance metal electrode.

10. Use of the low-square-resistance tungsten-copper electronic paste according to claim 9 in preparing a low-square-resistance metal electrode, characterized in that: The protective atmosphere is nitrogen or an inert gas; the reducing gas is hydrogen or carbon monoxide.

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