Preparation method of glass core plate, glass core plate and chip packaging structure

Abstract

The invention provides a preparation method of a glass core plate, the glass core plate and a chip packaging structure. Firstly, a glass substrate is provided, and then a substrate through hole penetrating through the glass substrate is formed in the glass substrate. Then, a buffer layer covering the surface of the glass substrate and filling the substrate through holes is manufactured, buffer layer through holes penetrating through the buffer layer in the substrate through holes are manufactured, the aperture of the buffer layer through holes is smaller than that of the substrate through holes, and the buffer layer is attached to the inner walls of the substrate through holes. Finally, conductive wires are manufactured in the buffer layer through holes, and the two opposite sides of the glass substrate are communicated through the conductive wires. Therefore, according to the scheme, the buffer layers are manufactured on the surface of the glass substrate and in the substrate through holes, and then the buffer layers in the substrate through holes are subjected to trepanning treatment, so that the preparation of the buffer layer of the glass core plate is completed, and the preparation effect of the buffer layer is improved.

Description

Technical Field

[0001] The present application relates to the field of semiconductor manufacturing, and more specifically, to a method for preparing a glass core board, a glass core board, and a chip packaging structure. Background Art

[0002] Currently, when a buffer layer is manufactured on a glass substrate having conductive through holes, the preparation effect of the buffer layer is not good. Summary of the Invention

[0003] In order to overcome the technical problems mentioned in the above technical background, an embodiment of the present application provides a method for preparing a glass core board, the method comprising: providing a glass substrate; making a substrate through-hole on the glass substrate that passes through the glass substrate; preparing a buffer layer covering the surface of the glass substrate and filling the through-holes of the substrate; Making a buffer layer through hole penetrating the buffer layer in the substrate through hole, wherein the aperture of the buffer layer through hole is smaller than the aperture of the substrate through hole, and the buffer layer is laminated to the inner wall of the substrate through hole; Conductive traces are fabricated in the through holes of the buffer layer, wherein the conductive traces connect two opposite sides of the glass substrate.

[0004] In a possible implementation, the step of forming a buffer layer covering the surface of the glass substrate and filling the substrate through-hole includes: The buffer layer is formed on the opposite surface of the glass substrate and in the through hole of the substrate by coating, dipping, spinning or laminating.

[0005] In a possible implementation, when the material of the buffer layer is a photosensitive material, the step of forming a buffer layer through hole penetrating the buffer layer in the substrate through hole includes: forming a negative photoresist layer on the glass substrate; Performing a windowing process on the negative photoresist layer to form an exposure window exposing the buffer layer in the substrate through-hole, wherein the size of the exposure window is smaller than the size of the substrate through-hole; The buffer layer in the substrate through hole is exposed through the exposure window to obtain a buffer layer through hole that penetrates the buffer layer in the substrate through hole.

[0006] In a possible implementation, when the material of the buffer layer is a non-photosensitive material, the step of forming a buffer layer through hole penetrating the buffer layer in the substrate through hole includes: forming a mask layer on the glass substrate; performing patterning on the mask layer to form a mask opening exposing the buffer layer in the substrate through-hole, wherein a size of the mask opening is smaller than a size of the substrate through-hole; The buffer layer in the substrate through hole is etched through the mask opening to obtain a buffer layer through hole that penetrates the buffer layer in the substrate through hole.

[0007] In a possible implementation, the step of forming a buffer layer through hole penetrating the buffer layer in the substrate through hole includes: A buffer layer through hole penetrating the buffer layer in the substrate through hole is made by laser or mechanical drilling.

[0008] In a possible implementation, the step of fabricating a conductive trace in the buffer layer through hole includes: forming a seed metal layer on the buffer layer, wherein the seed metal layer is at least located on the surface of the buffer layer in the through hole of the substrate; A metal conductive layer is grown on the seed metal layer, and the metal conductive layer is patterned to obtain conductive traces filled in the through holes of the buffer layer.

[0009] Another object of the present application is to provide a glass core board, comprising: A glass substrate, wherein the glass substrate includes a substrate through-hole penetrating the glass substrate; a buffer layer located at least within the substrate through-hole, wherein the buffer layer adheres to the inner wall of the substrate through-hole within the substrate through-hole and further forms a buffer layer through-hole within the substrate through-hole, wherein the aperture of the buffer layer through-hole is smaller than the aperture of the substrate through-hole; Conductive traces are filled in the through holes of the buffer layer, and the conductive traces connect two opposite sides of the glass substrate.

[0010] In a possible implementation, the material of the buffer layer includes a photosensitive material or a non-photosensitive material; In the substrate through-hole, the buffer layer has a thickness of 1 micron to 10 microns.

[0011] In a possible implementation, the glass core board further includes a seed metal layer; The seed metal layer is in contact with the inner wall of the through hole of the buffer layer, and the seed metal layer is located between the buffer layer and the conductive trace.

[0012] Another object of the present application is to provide a chip packaging structure, which is prepared by the preparation method of multiple glass core boards provided in the present application or includes multiple glass core boards provided in the present application.

[0013] Based on any one of the above aspects, the embodiments of the present application provide a method for preparing a glass core board, a glass core board, and a chip packaging structure, first, a glass substrate is provided, and then a substrate through-hole is made on the glass substrate to pass through the glass substrate. Next, a buffer layer is made to cover the surface of the glass substrate and fill the substrate through-hole, and then a buffer layer through-hole is made to pass through the buffer layer in the substrate through-hole, wherein the aperture of the buffer layer through-hole is smaller than the aperture of the substrate through-hole, and the inner wall of the substrate through-hole is bonded with the buffer layer. Finally, a conductive trace is made in the buffer layer through-hole, wherein the conductive trace connects the opposite sides of the glass substrate. In this way, the above scheme first makes a buffer layer in the substrate through-hole on the surface of the glass substrate, and then performs a hole-opening treatment on the buffer layer in the substrate through-hole, thereby completing the preparation of the buffer layer in the glass core board and improving the preparation effect of the buffer layer. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following is a brief introduction to the drawings required in the embodiments. It should be understood that the following drawings only show certain embodiments of the present application and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other relevant drawings can be obtained based on these drawings without paying any creative work.

[0015] Figure 1 A step diagram of a method for preparing a glass core board provided in this embodiment; Figure 2 for Figure 1 Corresponding process flow chart; Figure 3 for Figure 1 One of the sub-step flow diagrams of step S140; Figure 4 for Figure 3 Corresponding process flow chart; Figure 5 for Figure 1 The second sub-step flow diagram of step S140; Figure 6 for Figure 5 Corresponding process flow chart; Figure 7 for Figure 1 Schematic diagram of the sub-step flow of step S150; Figure 8 for Figure 7 Corresponding process flow chart; Figure 9 A schematic diagram of a glass core board provided in this embodiment; Figure 10 for Figure 9 A partial enlarged view of the dotted circle in the middle.

[0016] Icon: 1-glass core board, 10-glass substrate, 100-substrate through hole, 20-buffer layer, 200-buffer layer through hole, 30-conductive trace, 40-negative photoresist layer, 400-exposure window, 50-mask layer, 500-mask opening, 60-seed metal layer. DETAILED DESCRIPTION

[0017] To make the objectives, technical solutions, and advantages of the embodiments of the present application more clear, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the accompanying drawings of the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Generally, the components of the embodiments of the present application described and shown in the drawings herein can be arranged and designed in various different configurations.

[0018] Therefore, the following detailed description of the embodiments of the present application provided in the accompanying drawings is not intended to limit the scope of the present application for protection, but merely represents selected embodiments of the present application. All other embodiments obtained by persons of ordinary skill in the art based on the embodiments in the present application without creative work are within the scope of protection of the present application.

[0019] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, it does not need to be further defined or explained in subsequent drawings.

[0020] In the description of this application, it should be noted that the terms "upper" and "lower" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, or the orientations or positional relationships in which the product of this application is typically placed when in use. These terms are intended solely to facilitate the description of this application and simplify the description, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, be constructed, or operate in a specific orientation. Therefore, they should not be construed as limitations on this application. Furthermore, the terms "first" and "second" and the like are used solely for distinction and should not be construed as indicating or implying relative importance.

[0021] It should be noted that, in the absence of conflict, different features in the embodiments of the present application can be combined with each other.

[0022] In order to solve the technical problems mentioned in the above background technology, the inventors innovatively designed the following technical solutions, and the specific implementation solutions of this application will be described in detail with reference to the accompanying drawings.

[0023] See Figure 1 and Figure 2 , Figure 1 This is a step diagram of a method for preparing a glass core board 1 provided in this embodiment. Figure 2 for Figure 1The corresponding process diagram. The preparation method of the glass core board 1 includes: In step S110 , a glass substrate 10 is provided.

[0024] In this step, the glass substrate 10 may be pre-treated, including cleaning, drying, and surface activation of the glass substrate 10 .

[0025] In step S120 , a through-substrate hole 100 is formed on the glass substrate 10 so as to penetrate the glass substrate 10 .

[0026] In this step, a substrate through hole 100 penetrating the glass substrate 10 may be formed on the glass substrate 10 by laser or mechanical means.

[0027] In this embodiment, there are multiple through-substrate holes 100, which can be arranged on the glass substrate 10 at equal intervals. The specific arrangement of the through-substrate holes 100 on the glass substrate 10 is not specifically limited herein and should be selected based on actual circumstances. Furthermore, the spacing between two adjacent through-substrate holes 100 is also not specifically limited herein and can be selected based on actual circumstances.

[0028] In step S130 , a buffer layer 20 is formed to cover the surface of the glass substrate 10 and fill the substrate through-hole 100 .

[0029] In step S140 , a buffer layer through hole 200 is formed that penetrates the buffer layer 20 in the substrate through hole 100 . The aperture of the buffer layer through hole 200 is smaller than that of the substrate through hole 100 , and the buffer layer 20 is laminated to the inner wall of the substrate through hole 100 .

[0030] In this embodiment, a buffer layer 20 is first produced on the surface of the glass substrate 10 and in the substrate through hole 100, and then the buffer layer 20 in the substrate through hole 100 is opened to complete the production of the buffer layer 20 of the glass core board 1, thereby improving the preparation effect of the buffer layer 20.

[0031] In step S150 , a conductive trace 30 is fabricated in the buffer layer through hole 200 , wherein the conductive trace 30 connects two opposite sides of the glass substrate 10 .

[0032] In this step, the conductive traces 30 may be fabricated in the buffer layer through-holes 200 by electroplating, physical vapor deposition (PVD), or the like, to achieve the electrical performance of the glass core board 1 .

[0033] In this embodiment, the material of the conductive trace 30 is selected from metals with excellent conductive properties, such as copper, aluminum, gold, etc. The material type of the conductive trace 30 is not specifically limited here.

[0034] Furthermore, step S120 can be implemented in the following manner.

[0035] The buffer layer 20 is formed on the opposite surface of the glass substrate 10 and in the substrate through hole 100 by coating, dipping, spinning or laminating.

[0036] In this embodiment, the buffer layer 20 is formed on the opposite surfaces of the glass substrate 10 and in the substrate through-hole 100 in different ways. In one implementation of this embodiment, a coating method can be used. Specifically, the buffer layer 20 is formed by uniformly coating the buffer layer 20 material on the opposite surfaces of the glass substrate 10 and in the substrate through-hole 100. The coating method includes spraying, dipping, or brushing.

[0037] In another implementation of this embodiment, the buffer layer 20 may be formed by dipping. Specifically, the glass substrate 10 is completely immersed in a solution of the buffer layer 20 material. By controlling the dipping time and the temperature of the solution, the buffer layer 20 material forms a uniform coating on the opposite surfaces of the glass substrate 10 and in the substrate through-hole 100. The buffer layer 20 is then dried and cured to form the buffer layer 20.

[0038] In another implementation of this embodiment, spraying can also be used. Specifically, the solution or molten material of the buffer layer 20 material is sprayed in a mist form onto the opposite surface of the glass substrate 10 and the substrate through-hole 100 under the action of compressed air or other gas by a spray gun or nozzle to form the buffer layer 20.

[0039] In another implementation of this embodiment, spin coating can also be used. Specifically, a solution of the buffer layer 20 material is dropped onto the high-speed rotating glass substrate 10, and the centrifugal force is used to evenly distribute the solution of the buffer layer 20 material on the glass substrate 10 to form a thin film. The buffer layer 20 is then dried and cured.

[0040] In another implementation of this embodiment, lamination can be used to laminate the pre-prepared buffer layer 20 film to the glass substrate 10 by heating, pressurizing or using an adhesive to form the buffer layer 20 .

[0041] It is worth noting that the preparation method of the buffer layer 20 mainly depends on the material type of the buffer layer 20, and the specific preparation method is not specifically limited here.

[0042] Further, see Figure 3 and Figure 4 , Figure 3 for Figure 1 One of the sub-step flow diagrams of step S140, Figure 4 for Figure 3 Corresponding process flow chart When the material of the buffer layer 20 is a photosensitive material, step S140 can be implemented in the following manner.

[0043] In sub-step S141 , a negative photoresist layer 40 is formed on the glass substrate 10 .

[0044] In this embodiment, the photoresist can be divided into positive photoresist and negative photoresist. The exposed areas of the positive photoresist are dissolved and removed during the subsequent development process, while the unexposed areas are retained. The exposed areas of the negative photoresist are retained during the development process, while the unexposed areas are dissolved and removed.

[0045] In sub-step S142 , the negative photoresist layer 40 is subjected to a window opening process to form an exposure window 400 exposing the buffer layer 20 in the through-substrate hole 100 . The size of the exposure window 400 is smaller than the size of the through-substrate hole 100 .

[0046] In this step, the area of the exposure window 400 corresponding to the substrate through hole 100 on the mask is set as the non-exposure area, and the area of the other parts of the glass substrate 10 on the mask is the exposure area. In this case, the negative photoresist layer 40 is processed by exposure and development, so that the negative photoresist located in the exposure area on the mask undergoes chemical changes and is retained during the development process, and the negative photoresist located in the non-exposure area on the mask is removed to form the exposure window 400, thereby exposing the buffer layer 20 corresponding to the substrate through hole 100.

[0047] In sub-step S143 , the buffer layer 20 in the substrate through hole 100 is exposed through the exposure window 400 to obtain a buffer layer through hole 200 penetrating the buffer layer 20 in the substrate through hole 100 .

[0048] In this embodiment, since the buffer layer 20 itself is a photosensitive material, the buffer layer 20 exposed in the exposure window 400 can be directly exposed by an exposure machine. After exposure, the buffer layer 20 undergoes chemical changes, so that it is removed during the development process, thereby forming a buffer layer through hole 200 that penetrates the buffer layer 20 in the substrate through hole 100, thereby realizing the preparation of the buffer layer 20 of the glass core board 1.

[0049] Further, see Figure 5 and Figure 6 , Figure 5 for Figure 1 The second sub-step flow diagram of step S140 is as follows: Figure 6 for Figure 5 When the material of the buffer layer 20 is a non-photosensitive material, step S140 can also be implemented in the following manner.

[0050] In sub-step S141 ′, a mask layer 50 is formed on the glass substrate 10 .

[0051] In sub-step S142 ′, the mask layer 50 is patterned to form a mask opening 500 exposing the buffer layer 20 in the through-substrate hole 100 , wherein the size of the mask opening 500 is smaller than the size of the through-substrate hole 100 .

[0052] In this embodiment, the mask opening 500 exposes the buffer layer 20 in the substrate through-hole 100. The mask layer 50 surrounding the mask opening 500 protects areas not requiring etching from being affected by the etching process. The mask layer 50 can be a photoresist, a metal mask layer, a silicon dioxide (SiO2) mask layer, a silicon nitride (Si3N4) mask layer, or a polyimide (PI) mask layer. Metal mask layers are typically made of metal materials such as aluminum and chromium, which have excellent etching resistance and can protect areas of the glass substrate 10 not requiring etching. The silicon dioxide (SiO2) mask layer can be deposited using methods such as chemical vapor deposition (CVD) or physical vapor deposition (PVD), and exhibits excellent chemical stability and etching resistance. The silicon nitride (Si3N4) mask layer can be deposited using methods such as low-pressure chemical vapor deposition (LPCVD), and exhibits excellent chemical stability and etching resistance. The polyimide (PI) mask layer can be prepared by methods such as spin coating and has good thermal and chemical stability.

[0053] In sub-step S143 ′, the buffer layer 20 in the substrate through hole 100 is etched through the mask opening 500 to obtain a buffer layer through hole 200 penetrating the buffer layer 20 in the substrate through hole 100 .

[0054] In this embodiment, the manner of etching the buffer layer 20 in the substrate through hole 100 is different. In one implementation of this embodiment, dry etching can be used for etching. Dry etching uses high-energy particles in plasma to bombard the buffer layer 20 in the substrate through hole 100, causing the material in the bombarded area to undergo physical or chemical changes and be removed.

[0055] In one implementation of this embodiment, wet etching can be used for etching. Wet etching is to immerse the glass substrate 10 in a specific chemical solution, and the solution reacts chemically with the buffer layer 20, thereby dissolving and removing the buffer layer 20 located in the substrate through hole 100 at the mask opening 500.

[0056] Furthermore, step S140 can also be implemented in the following manner.

[0057] The buffer layer through hole 200 penetrating the buffer layer 20 in the substrate through hole 100 is made by laser or mechanical drilling.

[0058] In this embodiment, when a laser is used for drilling, a high-precision ultraviolet or CO2 laser is typically used to scan the surface of the buffer layer 20 at the substrate through-hole 100 with millisecond-level pulse accuracy. The high energy density of the focused laser beam instantly vaporizes the material of the buffer layer 20, forming a precise buffer layer through-hole 200. When a mechanical method is used for drilling, different mechanical materials can be selected depending on the material of the buffer layer 20. For example, a diamond drill bit or a carbide drill bit can be selected. The mechanical structure is then used to drill the buffer layer 20 at the substrate through-hole 100, forming a precise buffer layer through-hole 200.

[0059] Further, see Figure 7 and Figure 8 , Figure 7 for Figure 1 Schematic diagram of the sub-step flow of step S150, Figure 8 for Figure 7 Corresponding process flow chart. Step S150 can be implemented in the following manner.

[0060] In sub-step S151 , a seed metal layer 60 is formed on the buffer layer 20 , wherein the seed metal layer 60 is at least located on the surface of the buffer layer 20 in the substrate through hole 100 .

[0061] In this step, a seed metal layer 60 can be formed on the buffer layer 20 using physical vapor deposition (PVD) techniques, such as magnetron sputtering or DC magnetron sputtering. Before forming the seed metal layer 60, the surface of the buffer layer 20 needs to be plasma cleaned or chemically pretreated to remove impurities on the surface of the buffer layer 20, thereby improving the adhesion of the seed metal layer 60.

[0062] In sub-step S152 , a metal conductive layer is grown on the seed metal layer 60 , and the metal conductive layer is patterned to obtain conductive traces 30 filled in the buffer layer through-holes 200 .

[0063] In this step, electroplating is usually used to grow a metal conductive layer on the seed metal layer 60. Specifically, after the seed metal layer 60 is formed on the buffer layer 20, the glass substrate 10 is placed in an electroplating tank filled with an electroplating solution, with the seed metal layer 60 as a conductive pin, and an appropriate current density is applied. Under these conditions, the metal ions undergo a reduction reaction on the surface of the seed metal layer 60 and gradually deposit, thereby forming a metal conductive layer. The metal conductive layer can be patterned using photolithography or etching technology to obtain conductive traces 30, thereby realizing electrical interconnection of the glass core board 1 and ensuring that it has good electrical performance.

[0064] Based on the same inventive concept, another object of this application is to provide a glass core board 1, see Figure 9 , Figure 9 This is a schematic diagram of a glass core board 1 provided in this embodiment. The glass core board 1 includes a glass substrate 10, a buffer layer 20, and a conductive trace 30. The glass substrate 10 includes a substrate through-hole 100 extending therethrough. The buffer layer 20 is located at least within the substrate through-hole 100. Within the substrate through-hole 100, the buffer layer 20 adheres to the inner wall of the substrate through-hole 100. The buffer layer 20 also forms a buffer layer through-hole 200 within the substrate through-hole 100. The aperture of the buffer layer through-hole 200 is smaller than that of the substrate through-hole 100. The conductive trace 30 is filled within the buffer layer through-hole 200, connecting the two opposite sides of the glass substrate 10.

[0065] In this embodiment, a through-substrate hole 100 penetrating the glass substrate 10 can be formed on the glass substrate 10 by laser or mechanical means. The buffer layer through-hole 200 is formed by first forming a buffer layer 20 on the surface of the glass substrate 10 and within the through-substrate hole 100, and then performing a hole-forming process on the buffer layer 20 within the through-substrate hole 100. This method ensures the preparation effect of the buffer layer 20. The conductive traces 30 achieve electrical interconnection of the glass core board 1 to ensure its good electrical performance.

[0066] Furthermore, the material of the buffer layer 20 of this embodiment includes a photosensitive material or a non-photosensitive material. If the material of the buffer layer 20 is a photosensitive material, the buffer layer through hole 200 can be formed by exposure. Specifically, first, a negative photoresist layer 40 is made on the glass substrate 10. Then, the negative photoresist layer 40 is opened to form an exposure window 400 that exposes the buffer layer 20 in the substrate through hole 100. Finally, the buffer layer 20 in the substrate through hole 100 is exposed through the exposure window 400 to obtain a buffer layer through hole 200 that penetrates the buffer layer 20 in the substrate through hole 100. In this way, since the buffer layer 20 itself is a photosensitive material, the buffer layer 20 exposed in the exposure window 400 can be directly exposed by an exposure machine. After exposure, the buffer layer 20 undergoes a chemical change, so that it is removed during the development process, thereby forming a buffer layer through hole 200 that penetrates the buffer layer 20 in the substrate through hole 100, thereby realizing the preparation of the buffer layer 20 of the glass substrate 10.

[0067] If the buffer layer 20 is made of a non-photosensitive material, the buffer layer through-hole 200 can be formed by etching, laser, or mechanical means. Specifically, a mask layer 50 is first formed on the glass substrate 10. Then, the mask layer 50 is patterned to form a mask opening 500 that exposes the buffer layer 20 in the substrate through-hole 100. Finally, the buffer layer 20 in the substrate through-hole 100 is etched through the mask opening 500 to form a buffer layer through-hole 200 that penetrates the buffer layer 20 in the substrate through-hole 100. When the buffer layer through-hole 200 is formed by laser or mechanical means, it is not necessary to prepare the mask layer 50 in advance. High-precision ultraviolet light or a diamond drill bit combined with a mechanical structure can be used to directly open the hole.

[0068] In the through-substrate hole 100, see Figure 10 , Figure 10 for Figure 9 The thickness D of the buffer layer 20 is 1 μm to 10 μm. For example, the thickness D of the buffer layer 20 is 1 μm, 2 μm, 3 μm, 4 μm, 5 μm, 6 μm, 7 μm, 8 μm, 9 μm, and 10 μm.

[0069] It is worth noting that the specific thickness D of the buffer layer 20 of this embodiment is not specifically limited here and can be selected within the above range according to actual conditions.

[0070] Furthermore, the glass core board 1 further includes a seed metal layer 60 . The seed metal layer 60 is adhered to the inner wall of the buffer layer through hole 200 . The seed metal layer 60 is located between the buffer layer 20 and the conductive trace 30 .

[0071] In this embodiment, before making the conductive trace 30, it is first necessary to make a seed metal layer 60 on the buffer layer 20, wherein the seed metal layer 60 is at least located on the surface of the buffer layer 20 in the substrate through-hole 100, and then, a metal conductive layer is grown on the seed metal layer 60, and the metal conductive layer is patterned to obtain the conductive trace 30 filled in the buffer layer through-hole 200, thereby realizing the electrical interconnection of the glass core board 1.

[0072] Based on the same inventive concept, another object of the present application is to provide a chip packaging structure, which is prepared by the preparation method of multiple glass core boards 1 provided in the present application or includes multiple glass core boards 1 provided in the present application. According to the above-mentioned preparation method of the glass core board 1, the preparation effect of the buffer layer 20 is improved, the product quality of the glass core board 1 is guaranteed, and the product quality and market competitiveness of the chip packaging structure are guaranteed.

[0073] In summary, the present application provides a method for preparing a glass core board, a glass core board and a chip packaging structure. First, a glass substrate is provided, and then a substrate through-hole is made on the glass substrate to pass through the glass substrate. Next, a buffer layer is made to cover the surface of the glass substrate and fill the substrate through-hole, and then a buffer layer through-hole is made to pass through the buffer layer in the substrate through-hole, wherein the aperture of the buffer layer through-hole is smaller than the aperture of the substrate through-hole, and the inner wall of the substrate through-hole is bonded with the buffer layer. Finally, a conductive trace is made in the buffer layer through-hole, wherein the conductive trace connects the opposite sides of the glass substrate. In this way, the above scheme first makes a buffer layer in the substrate through-hole on the surface of the glass substrate, and then performs a hole-opening treatment on the buffer layer in the substrate through-hole, thereby completing the preparation of the buffer layer in the glass core board and improving the preparation effect of the buffer layer.

[0074] The above description is merely a preferred embodiment of the present application and is not intended to limit the present application. Various modifications and variations are possible for those skilled in the art. Any modifications, equivalent substitutions, or improvements made within the spirit and principles of the present application shall be included within the scope of protection of the present application.

Claims

1. A method for preparing a glass core board, characterized in that: The method comprises: providing a glass substrate; making a substrate through-hole on the glass substrate that passes through the glass substrate; preparing a buffer layer covering the surface of the glass substrate and filling the through-holes of the substrate; Making a buffer layer through hole penetrating the buffer layer in the substrate through hole, wherein the aperture of the buffer layer through hole is smaller than the aperture of the substrate through hole, and the buffer layer is laminated to the inner wall of the substrate through hole; Conductive traces are fabricated in the through holes of the buffer layer, wherein the conductive traces connect two opposite sides of the glass substrate.

2. The method for preparing a glass core board according to claim 1, wherein: The step of preparing a buffer layer covering the surface of the glass substrate and filling the substrate through-hole comprises: The buffer layer is formed on the opposite surface of the glass substrate and in the through hole of the substrate by coating, dipping, spinning or laminating.

3. The method for preparing a glass core board according to claim 1, wherein: When the material of the buffer layer is a photosensitive material, the step of forming a buffer layer through hole penetrating the buffer layer in the substrate through hole includes: forming a negative photoresist layer on the glass substrate; Performing a windowing process on the negative photoresist layer to form an exposure window exposing the buffer layer in the substrate through-hole, wherein the size of the exposure window is smaller than the size of the substrate through-hole; The buffer layer in the substrate through hole is exposed through the exposure window to obtain a buffer layer through hole that penetrates the buffer layer in the substrate through hole.

4. The method for preparing a glass core board according to claim 1, wherein: When the material of the buffer layer is a non-photosensitive material, the step of forming a buffer layer through hole penetrating the buffer layer in the substrate through hole includes: forming a mask layer on the glass substrate; performing patterning on the mask layer to form a mask opening exposing the buffer layer in the substrate through-hole, wherein a size of the mask opening is smaller than a size of the substrate through-hole; The buffer layer in the substrate through hole is etched through the mask opening to obtain a buffer layer through hole that penetrates the buffer layer in the substrate through hole.

5. The method for preparing a glass core board according to claim 1, wherein: The step of making a buffer layer through hole penetrating the buffer layer in the substrate through hole comprises: A buffer layer through hole penetrating the buffer layer in the substrate through hole is made by laser or mechanical drilling.

6. The method for preparing a glass core board according to claim 1, wherein: The step of making a conductive trace in the buffer layer through hole includes: forming a seed metal layer on the buffer layer, wherein the seed metal layer is at least located on the surface of the buffer layer in the through hole of the substrate; A metal conductive layer is grown on the seed metal layer, and the metal conductive layer is patterned to obtain conductive traces filled in the through holes of the buffer layer.

7. A glass core board, characterized in that: The glass core board comprises: A glass substrate, wherein the glass substrate includes a substrate through-hole penetrating the glass substrate; a buffer layer located at least within the substrate through-hole, wherein the buffer layer adheres to the inner wall of the substrate through-hole within the substrate through-hole and further forms a buffer layer through-hole within the substrate through-hole, wherein the aperture of the buffer layer through-hole is smaller than the aperture of the substrate through-hole; Conductive traces are filled in the through holes of the buffer layer, and the conductive traces connect two opposite sides of the glass substrate.

8. The glass core board according to claim 7, wherein: The material of the buffer layer includes a photosensitive material or a non-photosensitive material; In the substrate through-hole, the buffer layer has a thickness of 1 micron to 10 microns.

9. The glass core board according to claim 7, wherein: The glass core board further includes a seed metal layer; The seed metal layer is in contact with the inner wall of the through hole of the buffer layer, and the seed metal layer is located between the buffer layer and the conductive trace.

10. A chip packaging structure, characterized in that: The chip packaging structure includes a glass core board prepared by the method for preparing a glass core board according to any one of claims 1 to 6, or a glass core board according to any one of claims 7 to 9.

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