Semiconductor wafer chuck

Abstract

The present invention relates to the field of wafer processing technology, and discloses a semiconductor wafer chuck, comprising: a fixed ring provided with a limiting groove for clamping and fixing the wafer; a heat drying turntable, which is arranged on one side of the fixed ring, and an air gap is formed between the two; the heat drying turntable is provided with a heat source on a side away from the fixed ring, and a heating surface is formed on a side facing the fixed ring, and the heat generated by the heat source forms a heat radiation layer in the air gap; the center of the fixed ring and the disk center of the heat drying turntable are collinear; a driving source, whose power output end is connected to the heat drying turntable and the fixed ring; through the non-contact design of the heat source and the wafer, a heat radiation field is formed in conjunction with the relative rotation of the heat source, thereby achieving uniform control of the heat source temperature, ensuring the temperature stability of the wafer when heating and cooling, and preventing structural damage caused by uneven surface temperature of the wafer.

Description

Technical Field

[0001] The present invention relates to the technical field of wafer processing, in particular to a semiconductor wafer chuck. Background Art

[0002] Wafers are semiconductor components used in chip production, and their production process requires photolithography, during which they need to be heated and cooled.

[0003] In the wafer heating process, the heating of the photolithography part is in the field of low-temperature precision process, and its heating temperature is generally less than 400°C. At this time, due to considerations of thermal damage, its heating and cooling will adopt a hot plate contact heating method, which can enable heat to be directly transferred to the object through a metal plate (aluminum / copper) as a heat source. The thermal efficiency is over 85%, which is 30% more energy-efficient than radiation heating. However, in the existing contact heating process, the heat sources (such as electric heating wires) on the surface of the contact heating plate are irregularly arranged, and there are many spaces without heat sources. Therefore, the starting heating temperatures at different points on the wafer surface are not the same. When heating or cooling starts, this feature will produce local temperature differences on the wafer surface, thereby causing differences in the thermal expansion coefficients of different areas of the wafer, and the gaps will worsen unevenly, which will cause the problem of silicon wafer breakage caused by uneven wafer surface temperature. Summary of the Invention

[0004] To this end, the technical problem to be solved by the present invention is to overcome the problem in the prior art that when the wafer is contact-heated on a hot plate, the uneven surface heating or cooling may cause structural damage to the wafer, and provide a semiconductor wafer chuck that can radiate heat to the wafer surface through a non-contact heating field to achieve the effect of uniform surface temperature distribution when the wafer surface is heated or cooled.

[0005] In order to solve the above technical problems, the present invention provides a semiconductor wafer chuck, comprising:

[0006] A fixed collar, provided with a limiting groove for clamping and fixing the wafer;

[0007] A heat drying turntable is disposed on one side of the fixed collar with an air gap therebetween; a heat source is provided on a side of the heat drying turntable away from the fixed collar, and a heating surface is formed on a side of the heat drying turntable facing the fixed collar. Heat generated by the heat source forms a heat radiation layer within the air gap; the center of the fixed collar and the center of the heat drying turntable are collinear;

[0008] A driving source, the power output end of which is connected to the hot drying turntable and the fixed collar;

[0009] The driving source drives the fixed sleeve and the heat drying turntable to rotate synchronously and in opposite directions. The rotation speed of the heat drying turntable is 5-20RPM. The heat drying turntable rotates to evenly distribute the heat of the heat radiation layer.

[0010] In one embodiment of the present invention, a plurality of heating holes are provided on the heating surface of the heating turntable, and the plurality of heating holes are arranged in a linear array from the center of the heating turntable toward the edge of the heating turntable.

[0011] In one embodiment of the present invention, the semiconductor wafer chuck further comprises:

[0012] a reverse conjugate gear set connected to a power output end of the driving source, the reverse conjugate gear set comprising a driving gear and a plurality of driven gears each meshing with the driving gear; the driving source drives the driving gear to rotate, and when the driving gear rotates, each of the driven gears rotates about its own gear shaft;

[0013] A linkage workpiece, wherein a linkage groove is provided at the center of the linkage workpiece, a plurality of tooth grooves are provided in an annular array on the groove wall of the linkage groove, the reverse conjugate gear set is provided in the linkage groove, wherein each of the driven gears is meshed with the tooth groove;

[0014] The gear shaft of the driving gear is connected to the hot drying turntable, and the linkage workpiece is connected to the fixed collar.

[0015] In one embodiment of the present invention, both ends of the linkage workpiece are connected to telescopic rods, and the two telescopic rods are symmetrically arranged around the center of the linkage slot; the fixed collar is connected to the linkage workpiece via the telescopic rods;

[0016] The telescopic rod is capable of extension and retraction, and when the telescopic rod is extended and retracted, it drives the fixed collar to move toward or away from the hot drying turntable.

[0017] In one embodiment of the present invention, the telescopic rod is configured as an electric telescopic rod; the fixed collar is provided with a temperature sensor for detecting the temperature within the heat radiation layer; the electric telescopic rod performs telescopic action according to the temperature within the heat radiation layer obtained by the temperature sensor;

[0018] When the temperature in the heat radiation layer reaches a first calibration temperature, the electric telescopic rod contracts, driving the wafer to move toward the hot drying turntable;

[0019] When the hot drying turntable switches to the cooling mode and the temperature in the heat radiation layer reaches a second calibration temperature, the electric telescopic rod resets to drive the wafer to move away from the hot drying turntable, and the second calibration temperature is lower than the first calibration temperature.

[0020] In one embodiment of the present invention, a return spring is connected between the hot drying turntable and the gear shaft of the driving gear. When the center of the hot drying turntable is offset, the return spring produces elastic deformation and drives the center of the hot drying turntable to reset through the elastic force generated by its deformation.

[0021] In one embodiment of the present invention, the semiconductor wafer chuck further comprises:

[0022] base;

[0023] a driving cavity, provided in the base, for accommodating the linkage workpiece;

[0024] A limiting slideway is provided, wherein the telescopic rod passes through the driving cavity, and the end portion thereof passing through the driving cavity is slidably connected to the limiting slideway.

[0025] In one embodiment of the present invention, a accommodating cavity is provided at the center of the fixing ring, the limiting groove is located on the cavity wall of the accommodating cavity, an annular elastic member whose shape matches the inner wall of the limiting groove is fixed in the limiting groove, a notch for inserting the wafer is provided on the annular elastic member, and a pressing portion is provided on the annular elastic member, wherein when the wafer is inserted into the notch and touches the bottom of the groove of the annular elastic member, the elastic deformation of the groove bottom causes the pressing portion to abut against the surface of the wafer.

[0026] In one embodiment of the present invention, the annular elastic member further includes a buffer portion, which and the pressing portion simultaneously apply forces in opposite directions to the wafer surface, and the elastic modulus of the buffer portion material is greater than the elastic modulus of the pressing portion material.

[0027] In one embodiment of the present invention, the heat source is integrated with a heating wire water cooling dual system pipeline.

[0028] The above technical solution of the present invention has the following beneficial effects compared with the prior art:

[0029] The semiconductor wafer chuck described in the present invention includes a fixed ring for fixing the wafer and a heat drying turntable for heating. The heat drying turntable and the fixed ring are driven to rotate simultaneously by a driving source, and the heat drying turntable emits heat to form a uniform thermal field. At this time, the surface of the wafer on the fixed ring can be uniformly heated, thereby ensuring that the temperature of the wafer surface is uniform within the thermal radiation range when the temperature changes, and realizing a uniform heating and cooling operation process.

[0030] Among them, when the hot drying turntable is driven by the driving source, the heat emitted from the surface forms a heat radiation layer between the hot drying turntable and the fixed ring. After rotating for a period of time, the heat in the heat radiation layer forms a heat field with a circular cross-section under the action of centrifugal force. Its temperature is lower than the maximum temperature of the heat source and because of the constant heat transfer from the heat source, the temperature within the heat field gradually diffuses with the rotation. When the heat field is formed, its internal temperature tends to be constant, and the heat of the heat source with a smaller heating range is extended and confined to a larger area for stability through rotation. When the wafer enters the heat radiation layer horizontally, at any position, the surface temperature of the wafer at the same horizontal plane is the same. The closer to the heat source, the higher the surface temperature. Increasing the temperature of the heat source can increase the temperature of the heat radiation layer. By limiting the position of the wafer within the heat radiation layer, the heat of the same level in the heat radiation layer can cover every position on the wafer surface at the same time. Any point on the wafer surface is heated the same, achieving the effect of uniform heating at the beginning of heating and uniform cooling at the beginning of cooling. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] In order to make the contents of the present invention more clearly understood, the present invention is further described in detail below based on specific embodiments of the present invention in conjunction with the accompanying drawings.

[0032] Figure 1 This is a schematic structural diagram of a semiconductor wafer chuck in a preferred embodiment of the present invention;

[0033] Figure 2 A schematic cross-sectional view of a semiconductor wafer chuck according to a preferred embodiment of the present invention;

[0034] Figure 3 for Figure 2 A magnified schematic diagram of point A in the middle;

[0035] Figure 4 This is a schematic diagram of the interior of the driving cavity in a preferred embodiment of the present invention;

[0036] Figure 5 for Figure 4 A magnified schematic diagram of point B in the middle;

[0037] Figure 6 A schematic cross-sectional view of a fixing collar in a preferred embodiment of the present invention;

[0038] Figure 7 for Figure 6 Enlarged schematic diagram of point C in the middle;

[0039] Figure 8 A schematic diagram of the structure of a semiconductor wafer chuck in a preferred embodiment of the present invention Figure 2 .

[0040] Description of the accompanying drawings:

[0041] 1. Fixing ring; 11. Limiting groove; 12. Temperature sensor; 13. Accommodating cavity; 14. Annular elastic member; 141. Notch; 142. Pressing portion; 143. Buffer portion;

[0042] 2. Drying turntable; 21. Air gap; 22. Heating surface; 221. Drying holes; 23. Heat source;

[0043] 3. Driving source;

[0044] 4. Reverse conjugate gear set; 41. Driving gear; 411. Return spring; 42. Driven gear; 43. Linkage workpiece; 431. Linkage groove; 432. Tooth groove; 44. Telescopic rod;

[0045] 5. Base; 51. Driving cavity; 52. Limiting slide. DETAILED DESCRIPTION

[0046] The present invention will be further described below with reference to the accompanying drawings and specific embodiments so that those skilled in the art can better understand the present invention and implement it. However, the embodiments are not intended to limit the present invention.

[0047] The purpose of the embodiment of the present invention is to form a thermal field with uniform temperature at the same horizontal plane inside by rotating the hot drying turntable 2 before heating the wafer. At this time, the surface of the wafer is heated in the same way at any point on the surface at the same horizontal plane height, and the surface of the wafer is heated uniformly, thereby achieving the effect of uniform heating at the beginning of heating and uniform cooling at the beginning of cooling when performing high and low temperature testing of the wafer.

[0048] Reference Figure 1 、 2 , including a fixed collar 1, which is provided with a limiting groove 11 for clamping and fixing the wafer, and a heat drying turntable 2, which is arranged on one side of the fixed collar 1, and an air gap 21 is formed between the two; a heat source 23 is provided on the side of the heat drying turntable 2 away from the fixed collar 1, and a heating surface 22 is formed on the side facing the fixed collar 1. The heat generated by the heat source 23 forms a heat radiation layer in the air gap 21; the center of the fixed collar 1 and the center of the heat drying turntable 2 are collinear.

[0049] Reference Figure 1 、 2 The fixing ring 1 is made of rubber and is an annular part. Its size matches the wafer with heating and cooling. A limiting groove 11 is opened on the side wall of the fixing ring 1. When the wafer is placed on the fixing ring 1, it will be limited by the groove wall of the annular limiting groove 11 to prevent the wafer from shaking due to the vibration of the machine itself when the temperature is increased or decreased.

[0050] Reference Figure 1 、 2, 6, 7, a accommodating cavity 13 is provided in the center of the fixing ring 1, and the limiting groove 11 is located on the cavity wall of the accommodating cavity 13, and an annular elastic member 14 whose shape matches the inner wall of the limiting groove 11 is fixed in the limiting groove 11, and a notch 141 for inserting the wafer is provided on the annular elastic member 14, and a pressing portion 142 is provided on the annular elastic member 14, wherein when the wafer is inserted into the notch 141 and touches the bottom of the annular elastic member 14, the elastic deformation of the bottom of the groove pulls the pressing portion 142 to abut against the surface of the wafer, and the annular elastic member 14 also includes a buffer portion 143, which and the pressing portion 142 simultaneously apply forces in opposite directions to the wafer surface, and the elastic modulus of the material of the buffer portion 143 is greater than the elastic modulus of the material of the pressing portion 142.

[0051] Reference Figure 1 、 2 , 6, 7. An annular elastic member is fixed in the limiting groove 11. The shape of the annular elastic member 14 is the same as the shape of the inner wall of the limiting groove 11 and is fitted on the inner wall of the limiting groove 11. The annular elastic member 14 is bonded to the bottom of the limiting groove 11 by a colloid. A slot 141 for inserting the wafer is provided on the annular elastic member 14. When the wafer is placed, it is inserted into the slot 141 and will hit the bottom of the slot 141. The annular elastic member 14 is made of a material with high elastic deformation. When the side wall of the wafer hits, the deformation of the slot 141 will drive the pressing portion 142 to move toward the surface of the wafer, so that the pressing portion 142 is in contact with the surface of the wafer, applying pressure to fix the edge of the wafer and ensuring the stability of the wafer during rotation.

[0052] Reference Figure 1 、 2 , 6, 7, a buffer portion 143 is integrally formed opposite to the pressing portion 142. The material of the buffer portion 143 is different from that of the annular elastic member 14, and the elastic modulus of the material used is greater than the elastic modulus of the material of the pressing portion 142. When the pressing portion 142 abuts against the surface of the wafer, the buffer portion 143 will buffer the pressure generated by the pressing portion 142 through its own elastic deformation, thereby reducing the pressure of the pressing portion 142 on the wafer surface, so that the pressure generated by the pressing portion 142 is only partially applied to the wafer surface and does not affect the fixing effect of the wafer, thereby protecting the integrity of the wafer edge structure.

[0053] Reference Figure 1 、 2, 3, 4. A hot drying turntable 2 is provided below the fixed sleeve 1, wherein the hot drying turntable 2 is divided into a transfer part for conducting heat and a heat source 23 part. The heat source 23 generates heat through the power-on process, and heated metal copper wires are arranged in an array inside it. When the heat source 23 is energized, its heat will be transferred to the transfer part of the hot drying turntable 2. The part between the hot drying turntable 2 and the fixed sleeve 1 is an air gap 21. Heat is conducted through the air and dissipated in the direction of the fixed sleeve 1 through the transfer part and transferred to the air gap 21, forming a heat radiation layer. The heat is transferred to the surface of the wafer fixed on the fixed sleeve 1 through the principle of thermal radiation; in order to ensure that the position of the wafer on the fixed sleeve 1 and the heat on the surface of the hot drying turntable 2 can be evenly contacted, the centers of the fixed sleeve 1 and the hot drying turntable 2 are designed to be collinear during mechanical design to ensure that the side of the wafer facing the hot drying turntable 2 is evenly heated.

[0054] Reference Figure 1 、 2 , 3, 4. In another embodiment, the heat source 23 may be integrated with a dual system pipeline of a heating wire and water cooling, and the cooling effect of the heat source 23 itself may be accelerated during cooling by connecting the water circulation pump of the water cooling system to the outside.

[0055] Reference Figure 1 、 2 , 3, 4, the semiconductor wafer chuck also includes a driving source 3, whose power output end is connected to the hot drying turntable 2 and the fixed ring 1, the driving source 3 drives the fixed ring 1 and the hot drying turntable 2 to rotate synchronously and in opposite directions, the rotation speed of the hot drying turntable 2 is 5-20RPM, and the hot drying turntable 2 rotates to evenly distribute the heat of the heat radiation layer.

[0056] Reference Figure 1 、 2 , 3, 4. Drive source 3 provides the electric driving force, and its power output shaft can simultaneously drive the fixed collar 1 and the hot drying turntable 2 to rotate. During the rotation of the hot drying turntable 2, the heat dissipated by the heat source 23 diffuses within the heat radiation layer. Under the centrifugal force and circular motion, the heat is transformed from multiple small-scale heat concentrations into a heat radiation area with a circular cross-section. The characteristics of this heat radiation area are as follows: at the same horizontal height, the heat content of each point in the heat radiation layer at that height tends to be equal. The closer to the heat source 23, the higher the temperature, forming a heat radiation layer with a uniform temperature distribution. The maximum temperature generated by the heat source 23 is constant. After a period of time, the temperature of the area closest to the heat source 23 in the heat radiation layer approaches the temperature of the heat source 23 itself. At this point, heat transfer within the heat radiation layer stops, and temperature fluctuations reach a stable state. At this point, placing a wafer horizontally at any position in the heat radiation layer and rotating it can ensure that any point on the bottom surface of the wafer is heated uniformly, achieving a uniform heating and temperature increase effect. Conversely, when cooling, a uniform cooling effect can also be achieved.

[0057] Reference Figure 1 、 2 , 3, 4, the rotation directions of the hot baking turntable 2 and the fixed ring 1 are synchronized and opposite. When the heat radiation layer is initially formed, the energy of the internal heat source 23 is not completely diffused, and the heat range transferred to the wafer surface is affected by the arrangement of the heat source 23. There is no position where the copper wire is arranged in the heat source 23, and the heat transferred to the wafer surface at the corresponding position is less. At this time, the relative rotation can make each point on the wafer surface quickly and continuously switch its corresponding high heat point and low heat point of the heat source 23, and achieve dynamic balance under high-speed switching. Before the temperature in the heat radiation layer reaches a stable state, it prevents any point on the wafer surface from being baked at the high heat point of the heat source 23 for a long time, and forming a temperature difference with the position corresponding to the low heat point in advance, thereby causing the wafer to deform before the process starts, affecting the normal progress of subsequent heating and cooling.

[0058] Reference Figure 1 、 2 , 3, 4. The rotation speed of the hot baking turntable 2 is set to 5-20RPM to prevent its rotation speed from being too low to meet the conditions for the formation of the heat radiation layer, and the heat in the air gap 21 corresponding to the wafer is still uneven. If the rotation speed is too fast, the heat will be too dispersed under the centrifugal force, resulting in low heat in the air gap 21 corresponding to the wafer, and the temperature rising process requirements cannot be met.

[0059] Reference Figure 1 、 2 , 3, 4, the heating surface 22 of the hot drying turntable 2 is provided with a plurality of hot drying holes 221, and the plurality of hot drying holes 221 are arranged in a linear array from the center of the hot drying turntable 2 to the edge of the hot drying turntable 2.

[0060] Reference Figure 1 、 2 , 3, 4. Heat drying holes 221 are provided on the heating surface 22 of the heat drying turntable 2. The channels of the heat drying holes 221 directly reach the surface of the heat source 23. A copper wire heating pipe is integrated at the heat source 23 below the channel of each heat drying hole 221. The thermal conductivity of the air in the channel is much higher than the thermal conductivity of the material of the heat drying turntable 2 itself. By arranging the heat drying holes 221 in a linear array from the center of the heat drying turntable 2 to the edge of the heat drying turntable 2, the effect of a linear high-temperature area is achieved. At this time, when the heat drying turntable 2 is rotated, the temperature of the heat radiation zone in the initial state of its formation is higher and more uniform.

[0061] Reference Figure 3 、 4 5. The semiconductor wafer chuck further includes a reverse conjugate gear set 4, which is connected to the power output end of the driving source 3. The reverse conjugate gear set 4 includes a driving gear 41 and a plurality of driven gears 42 that are all engaged with the driving gear 41. The driving source 3 drives the driving gear 41 to rotate. When the driving gear 41 rotates, each driven gear 42 rotates around its own gear shaft.

[0062] Reference Figure 3 、 4 5. The reverse conjugate gear set 4 adopts a structural design in which a driving gear 41 is externally meshed with three driven gears 42. The driving gear 41 is fixed to the power output end of the driving source 3. When the driving source 3 is driven, the driving gear 41 rotates, and the three driven gears 42 meshing with it all rotate on their own. The rotation direction of the three driven gears 42 is opposite to that of the driving gear 41.

[0063] Reference Figure 3 、 4 5. The semiconductor wafer chuck further includes a linkage workpiece 43, a linkage groove 431 being provided at the center of the linkage workpiece 43, a plurality of tooth grooves 432 being provided in a ring array on the groove wall of the linkage groove 431, and a reverse conjugate gear set 4 being passed through the linkage groove 431, wherein each driven gear 42 is meshed with the tooth groove 432, the gear shaft of the driving gear 41 is connected to the hot drying turntable 2, and the linkage workpiece 43 is connected to the fixed collar 1.

[0064] Reference Figure 3 、 4 5. The linkage workpiece 43 is sleeved on the outside of the three driven gears 42. The tooth grooves 432 of the linkage grooves 431 are engaged with the gear teeth of the driven gears 42. When the driven gears 42 rotate, the linkage workpiece 43 and the driven gears 42 are driven to rotate in the same direction. The linkage workpiece 43 is connected to the fixed collar 1, thereby driving the fixed collar 1 and the wafer placed on the fixed collar 1 to rotate.

[0065] Reference Figure 3 、 4 , 5, 8, the two ends of the linkage workpiece 43 are respectively connected with a telescopic rod 44, and the two telescopic rods 44 are symmetrically arranged around the center of the linkage groove 431; the fixed collar 1 is connected to the linkage workpiece 43 through the telescopic rod 44. Among them, the telescopic rod 44 can be extended and retracted. When the telescopic rod 44 is extended and retracted, it drives the fixed ring 1 to move toward or away from the hot drying turntable 2. The telescopic rod 44 is set as an electric telescopic rod 44; a temperature sensor 12 is provided on the fixed ring 1, which is used to detect the temperature in the heat radiation layer; the detection process of the temperature sensor 12 is divided into a heating process and a cooling process. The electric telescopic rod 44 performs an extension and retraction action according to the temperature in the heat radiation layer obtained by the temperature sensor 12. In the heating process, when the temperature in the heat radiation layer reaches a first calibration temperature, the electric telescopic rod 44 contracts, driving the wafer to move toward the hot drying turntable 2; in the cooling process, when the hot drying turntable 2 switches to the cooling mode and the temperature in the heat radiation layer reaches a second calibration temperature, the electric telescopic rod 44 resets, driving the wafer to move away from the hot drying turntable 2, and the second calibration temperature is lower than the first calibration temperature.

[0066] Reference Figure 3 、4 , 5, 8, a return spring 411 is connected between the hot drying turntable 2 and the gear shaft of the driving gear 41. When the center of the hot drying turntable 2 is offset, the return spring 411 produces elastic deformation and drives the center of the hot drying turntable 2 to reset through the elastic force generated by its deformation.

[0067] Reference Figure 3 、 4 , 5, 8. During the heating or cooling process, the vibration of the machine body may cause the wafer to shift in position. Therefore, a reset spring 411 is connected between the gear shaft of the driving gear 41 and the bottom surface of the heat source 23 of the hot drying turntable 2. The axial direction of the reset spring 411 is collinear with the axial direction of the driving gear 41. When the vibration causes the hot drying turntable 2 to shift, the reset spring 411 will produce elastic deformation. Under the elastic driving force of the reset spring 411 itself, it will recover its deformation and drive the center of the hot drying turntable 2 to reset, ensuring that during the heating or cooling process, the position of the hot drying turntable 2 will not shift and affect the heating and cooling process of the wafer.

[0068] Reference Figure 1 、 2 , 4, 5, the semiconductor wafer chuck also includes a base 5; a driving cavity 51, which is opened in the base 5 and is used to accommodate the linkage workpiece 43; a limiting slide 52, the telescopic rod 44 passes through the driving cavity 51, and the end thereof passing through the driving cavity 51 is slidably connected to the limiting slide 52.

[0069] Reference Figure 1 、 2 , 4, 5, the base 5 is the base 5 of the semiconductor wafer chuck, which can support the above structure, and a driving cavity 51 is opened in the base 5, and the linkage workpiece 43 is slidably connected inside the driving cavity 51, and a limiting slide 52 is opened at the top of the driving cavity 51, and the telescopic rod 44 extends out of the end of the driving cavity 51 and its side wall abuts against the slide wall of the limiting slide 52. The supporting force of the side wall of the limiting slide 52 maintains the rotation stability when the linkage workpiece 43 drives the fixed ring 1 to rotate.

[0070] When using this device, place the wafer on the fixed collar 1 and clamp it in the annular elastic member 14. At this time, the pressing part 142 presses the wafer, turn on the electric heating switch of the heat source 23, start the driving source 3, and the power output end of the driving source 3 rotates, driving the hot drying turntable 2 and the fixed collar 1 to rotate simultaneously through the reverse conjugate gear set 4. The rotation directions of the two are opposite, and the temperature of the heat source 23 gradually increases and reaches a stable state. At this time, the heat emitted by the heat source 23 will generate a heat radiation layer in the air gap 21 between the fixed collar 1 and the hot drying turntable 2. The heat radiation layer gradually heats up. When the temperature of the heat radiation layer approaches the temperature of the heat source 23, the temperature flow in the heat radiation layer decreases and tends to be stable. At this time, under the signal transmission of the temperature sensor 12, the fixed ring 1 descends and drives the wafer close to the heat source 23. The wafer stops at a certain distance from the heat source 23 and starts to heat up. At this time, the temperature of each point on the layer at the same horizontal height of the heat radiation layer is the same, and the surface of the wafer is evenly heated. When the heating is completed, the water cooling pipe is started, and the temperature of the heat radiation layer drops evenly. When the temperature drops to the second calibration temperature, the temperature sensor 12 drives the telescopic rod 44 to recover, driving the wafer to return to its initial position, and the wafer is evenly cooled, ensuring that the surface heating and cooling conditions of the wafer are uniform during the heating and cooling processes, thereby maintaining the structural stability of the silicon wafer on the wafer surface.

[0071] Obviously, the above embodiments are merely examples for clarity of explanation and are not intended to limit the implementation methods. Those skilled in the art will appreciate that other variations or modifications can be made based on the above description. It is not necessary and impossible to enumerate all implementation methods here. Obvious variations or modifications arising therefrom remain within the scope of protection of the present invention.

Claims

1. A semiconductor wafer chuck, characterized in that: include, A fixed collar, provided with a limiting groove for clamping and fixing the wafer; A heat drying turntable is disposed on one side of the fixed collar with an air gap therebetween; a heat source is provided on a side of the heat drying turntable away from the fixed collar, and a heating surface is formed on a side of the heat drying turntable facing the fixed collar. Heat generated by the heat source forms a heat radiation layer within the air gap; the center of the fixed collar and the center of the heat drying turntable are collinear; A driving source, the power output end of which is connected to the hot drying turntable and the fixed collar; The driving source drives the fixed ring and the heat drying turntable to rotate synchronously and in opposite directions, the rotation speed of the heat drying turntable is 5-20RPM, and the heat drying turntable rotates to uniformly heat the heat radiation layer; The semiconductor wafer chuck further includes, a reverse conjugate gear set connected to a power output end of the driving source, the reverse conjugate gear set comprising a driving gear and a plurality of driven gears each meshing with the driving gear; the driving source drives the driving gear to rotate, and when the driving gear rotates, each of the driven gears rotates about its own gear shaft; A linkage workpiece, wherein a linkage groove is provided at the center of the linkage workpiece, a plurality of tooth grooves are provided in an annular array on the groove wall of the linkage groove, the reverse conjugate gear set is provided in the linkage groove, wherein each of the driven gears is meshed with the tooth groove; The gear shaft of the driving gear is connected to the hot drying turntable, and the linkage workpiece is connected to the fixed collar; Both ends of the linkage workpiece are connected to telescopic rods, and the two telescopic rods are symmetrically arranged around the center of the linkage slot; the fixed collar is connected to the linkage workpiece via the telescopic rods; The telescopic rod is capable of extension and retraction, and when the telescopic rod is extended and retracted, it drives the fixed collar to move toward or away from the hot drying turntable.

2. A semiconductor wafer chuck according to claim 1, characterized in that: The heating surface of the heat drying turntable is provided with a plurality of heat drying holes, and the plurality of heat drying holes are arranged in a linear array from the center of the heat drying turntable to the edge of the heat drying turntable.

3. The semiconductor wafer chuck according to claim 1, wherein: The telescopic rod is configured as an electric telescopic rod; a temperature sensor is provided on the fixed collar for detecting the temperature in the heat radiation layer; the electric telescopic rod performs telescopic action according to the temperature in the heat radiation layer obtained by the temperature sensor; When the temperature in the heat radiation layer reaches a first calibration temperature, the electric telescopic rod contracts, driving the wafer to move toward the hot drying turntable; When the hot drying turntable switches to the cooling mode and the temperature in the heat radiation layer reaches a second calibration temperature, the electric telescopic rod resets to drive the wafer to move away from the hot drying turntable, and the second calibration temperature is lower than the first calibration temperature.

4. The semiconductor wafer chuck according to claim 1, wherein: A return spring is connected between the hot drying turntable and the gear shaft of the driving gear. When the center of the hot drying turntable deviates, the return spring generates elastic deformation and drives the center of the hot drying turntable to return to its original position through the elastic force generated by the deformation.

5. The semiconductor wafer chuck according to claim 1, wherein: The semiconductor wafer chuck further includes, base; a driving cavity, provided in the base, for accommodating the linkage workpiece; A limiting slideway is provided, wherein the telescopic rod passes through the driving cavity, and the end portion thereof passing through the driving cavity is slidably connected to the limiting slideway.

6. The semiconductor wafer chuck according to claim 1, wherein: An accommodating cavity is provided at the center of the fixing ring, and the limiting groove is located on the cavity wall of the accommodating cavity. An annular elastic member whose shape matches the inner wall of the limiting groove is fixed in the limiting groove, and a notch for inserting the wafer is provided on the annular elastic member. A pressing portion is provided on the annular elastic member, wherein when the wafer is inserted into the notch and touches the bottom of the groove of the annular elastic member, the elastic deformation of the groove bottom causes the pressing portion to abut against the surface of the wafer.

7. The semiconductor wafer chuck according to claim 6, wherein: The annular elastic member further includes a buffer portion, which and the pressing portion simultaneously apply forces in opposite directions to the wafer surface, and the elastic modulus of the buffer portion material is greater than the elastic modulus of the pressing portion material.

8. The semiconductor wafer chuck according to claim 1, wherein: The heat source is integrated with a heating wire and water cooling dual system pipeline.

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