Film solid-state zinc ion battery based on magnetron sputtering and preparation method thereof

Abstract

The invention belongs to the technical field of electrochemical energy storage, and relates to a film solid zinc ion battery based on magnetron sputtering, which sequentially comprises a current collector layer, a zinc negative electrode layer, a gel electrolyte layer and a positive electrode layer, and an interface modification layer is arranged between the zinc negative electrode layer and the gel electrolyte layer. The zinc negative electrode layer, the interface modification layer and the positive electrode layer are deposited in a magnetron sputtering mode; the preparation method comprises the following steps: depositing a metal collector layer on a flexible substrate; depositing a zinc negative electrode film through magnetron sputtering; depositing an interface modification layer through magnetron sputtering; coating a gel electrolyte; depositing a positive electrode film through magnetron sputtering; packaging the battery device; the interface modification layer with high interface stability is constructed on the surface of the zinc negative electrode, so that dendritic crystal growth, interface corrosion and hydrogen evolution reaction can be effectively relieved, and the electrochemical performance and the structural stability of a flexible device in the multi-cycle and multi-bending process are improved.

Description

Technical Field

[0001] The present invention belongs to the technical field of electrochemical energy storage, and relates to a thin-film solid-state zinc ion battery based on magnetron sputtering and a preparation method thereof. Background Art

[0002] In recent years, the rapid development of emerging fields such as smart wearable devices, flexible displays, electronic skin, and flexible sensors has placed higher demands on energy supply units in flexible electronic systems. Traditional liquid electrolyte batteries have limitations in structural packaging, mechanical reliability, and device integration, making them difficult to adapt to the application needs of miniaturized and flexible electronic systems. As a response, thin-film batteries, with their thinness, light weight, bendability, and ability to integrate with flexible substrates, are becoming a core component of next-generation micro-energy solutions.

[0003] Especially in wearable and implantable devices with high safety requirements, thin-film solid-state zinc-ion batteries have attracted widespread attention due to their high safety, environmental friendliness and excellent electrochemical performance, and have become an important development direction for promoting the large-scale application of flexible energy devices.

[0004] However, zinc-ion batteries still face some key technical bottlenecks, especially in the long cycle process, which is prone to the generation of zinc dendrites and hydrogen evolution side reactions, leading to changes in the negative electrode morphology, electrolyte consumption, battery capacity attenuation and other problems. In order to alleviate the above problems, a lot of research has been carried out in the aspects of material structure and interface regulation. Common methods include the introduction of metal oxides, conductive polymers or interface layer structures to stabilize the zinc negative electrode. However, traditional coating methods often have problems such as insufficient film density, poor film uniformity and poor interface contact, making it difficult to achieve Zn 2+ Precise regulation of nucleation behavior.

[0005] Therefore, an interface regulation strategy designed for flexible thin-film solid-state zinc-ion batteries is needed to solve the above technical problems. Summary of the Invention

[0006] The technical solution adopted by the present invention to solve the technical problem is: a thin-film solid-state zinc ion battery based on magnetron sputtering, which includes: a current collector layer, a zinc negative electrode layer, a gel electrolyte layer and a positive electrode layer in sequence, and an interface modification layer is also provided between the zinc negative electrode layer and the gel electrolyte layer. The zinc negative electrode layer, the interface modification layer and the positive electrode layer are all deposited by magnetron sputtering.

[0007] Preferably, the interface modification layer includes: a metal interface layer, a metal oxide interface layer, and a metal nitride interface layer;

[0008] The target material of the metal interface layer includes one or more of Mg, Ca, Sr, Sc, Y, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Tc, Ru, Co, Rh, Cu, Ag, Cd, Al, In, Si, Ge, and Sn;

[0009] The target material of the metal oxide interface layer includes one or more of MgO, CaO, SrO, Sc2O3, Y2O3, TiO2, ZrO2, HfO2, V2O3, NbO2, TaO2, Cr2O3, MoO2, WO2, MnO2, Tc2O3, RuO2, Co3O2, Rh3O2, CuO, Ag2O, CdO, Al2O3, In2O3, SiO2, GeO2, and SnO2;

[0010] The target material of the metal nitride interface layer includes one or more of: Mg3N2, Ca3N2, Sr3N2, ScN, YN, Ti3N2, Zr3N2, Hf3N2, VN, Nb3N2, Ta3N2, CrN, Mo3N2, WN, Mn3N2, TcN, Ru3N2, CoN, RhN, Cu3N, Ag3N, CdN, AlN, InN, Si3N4, Ge3N4, Sn3N4.

[0011] Preferably, the thickness of the interface modification layer is 5 to 50 nm.

[0012] Preferably, the electrolyte system of the gel electrolyte layer includes: a PVA-ZnSO4 system and a PEO-ZnSO4 system.

[0013] Preferably, the material of the positive electrode layer includes: MnO2, VO2, NH4VO3; the positive electrode layer is enhanced in conductivity and reaction activity by doping or carbonization.

[0014] Preferably, the total thickness of the thin film solid-state zinc ion battery is less than 2 μm.

[0015] The present invention also discloses a method for preparing a thin-film solid-state zinc ion battery based on magnetron sputtering. The method is used to prepare the above-mentioned thin-film solid-state zinc ion battery based on magnetron sputtering, and the method comprises the following steps:

[0016] Step 1: Depositing a metal current collector layer as a conductive bottom layer on a flexible substrate by magnetron sputtering;

[0017] Step 2: depositing a metal zinc film on the current collector layer by magnetron sputtering to obtain a zinc negative electrode layer;

[0018] Step 3: Select a target material and deposit an interface modification layer on the surface of the zinc negative electrode layer by magnetron sputtering;

[0019] Step 4: preparing a gel electrolyte and coating it on the interface modification layer to form a gel electrolyte layer as an ion transmission channel;

[0020] Step 5: using magnetron sputtering to deposit MnO2 or ternary oxide material as a positive electrode active layer on the gel electrolyte layer as a positive electrode layer;

[0021] Step 6: Deposit a top current collector on the positive electrode layer, encapsulate and protect the entire structure, and obtain a flexible thin-film solid-state zinc-ion battery.

[0022] Preferably, in step 3, the magnetron sputtering parameters of the interface modification layer include: background vacuum degree of 0.1×10 - 4 Pa~9.9×10 -4 Pa, working gas pressure is 0.40-0.50 Pa, working bias voltage is 90 V, target material purity is ≥99.99%, target distance is 8-12 cm, sputtering temperature is 20-30° C., and sputtering time is 2-10 min.

[0023] The beneficial effects of the present invention are:

[0024] 1. The present invention can improve the density and uniformity of the film layer of zinc ion batteries. The interface layer structure formed by magnetron sputtering is continuous and dense, with controllable thickness, which can effectively reduce the Zn 2+ Dendrite risk during deposition.

[0025] 2. The sputtered film layer of the present invention is directly deposited on the surface of the zinc negative electrode under vacuum conditions, and has excellent adhesion and flexible compatibility; therefore, the present invention can improve the cycle stability and energy density of the zinc ion battery; through effective interface regulation, it can slow down the instability of the zinc negative electrode structure and the electrolyte consumption problems, thereby extending the battery life.

[0026] 3. The present invention is applicable to flexible electronic devices. The battery structure provided by the present invention has an overall thickness of less than 2 μm, has excellent flexibility and mechanical durability, and is easy to integrate with wearable devices. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1 This is a schematic structural diagram of a thin-film solid-state zinc ion battery based on magnetron sputtering and a preparation method thereof according to the present invention;

[0028] Figure 2 This is a flow chart of the magnetron sputtering process for the interface modification layer of the present invention;

[0029] Figure 3 This is a graph showing the experimental results of the effects of different interface modification layers of the present invention on the performance of zinc ion batteries. DETAILED DESCRIPTION

[0030] The following will provide a clear and complete description of the relevant technologies in the present invention in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the embodiments described are only part of the embodiments of the present invention, not all of them. All other embodiments obtained by ordinary technicians in this field based on the embodiments of the present invention without making any creative efforts shall fall within the scope of protection of the present invention.

[0031] refer to Figures 1 to 3 As shown, a thin film solid-state zinc ion battery based on magnetron sputtering in this specific embodiment includes, in sequence: a current collector layer, a zinc negative electrode layer, a gel electrolyte layer and a positive electrode layer, and an interface modification layer is further provided between the zinc negative electrode layer and the gel electrolyte layer. The zinc negative electrode layer, the interface modification layer and the positive electrode layer are all deposited by magnetron sputtering; the interface modification layer achieves grain densification by regulating the magnetron sputtering process parameters to enhance the bonding force and flexible compatibility with the zinc layer. The interface modification layer not only has excellent physical density and electrochemical stability, but also can form a space charge layer at the interface, regulate the migration channel of zinc ions and the local electric field distribution, thereby inhibiting the hydrogen evolution side reaction and dendrite formation from the interface mechanism. Therefore, the flexible thin film solid-state zinc ion battery of the present invention can achieve high safety, long life, high energy density and excellent flexibility, and is suitable for micro power sources, flexible wearable devices and other fields.

[0032] Furthermore, the interface modification layer includes: a metal interface layer, a metal oxide interface layer, and a metal nitride interface layer; the interface modification layer can be selected from one or more of the metal interface layer, the metal oxide interface layer, and the metal nitride interface layer according to actual needs, thereby obtaining different battery capacity retention rates;

[0033] The target material of the metal interface layer includes one or more of Mg, Ca, Sr, Sc, Y, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Tc, Ru, Co, Rh, Cu, Ag, Cd, Al, In, Si, Ge, and Sn;

[0034] The target material of the metal oxide interface layer includes one or more of MgO, CaO, SrO, Sc2O3, Y2O3, TiO2, ZrO2, HfO2, V2O3, NbO2, TaO2, Cr2O3, MoO2, WO2, MnO2, Tc2O3, RuO2, Co3O2, Rh3O2, CuO, Ag2O, CdO, Al2O3, In2O3, SiO2, GeO2, and SnO2;

[0035] The target material of the metal nitride interface layer includes one or more of: Mg3N2, Ca3N2, Sr3N2, ScN, YN, Ti3N2, Zr3N2, Hf3N2, VN, Nb3N2, Ta3N2, CrN, Mo3N2, WN, Mn3N2, TcN, Ru3N2, CoN, RhN, Cu3N, Ag3N, CdN, AlN, InN, Si3N4, Ge3N4, Sn3N4.

[0036] Furthermore, the thickness of the interface modification layer is 5 to 50 nm. The introduction of the ultra-thin interface modification layer deposited by magnetron sputtering can achieve uniform nucleation of Zn, growth direction induction and improved interface stability without significantly increasing the thickness of the device.

[0037] Furthermore, the electrolyte system of the gel electrolyte layer includes: PVA-ZnSO4 system, PEO-ZnSO4 system; PVA-ZnSO4 system or PEO-ZnSO4 system has high ionic conductivity and good flexible support characteristics, ensuring Zn 2+ The migration is smooth and the interface debonding problem caused by mechanical deformation is suppressed.

[0038] Furthermore, the material of the positive electrode layer includes: MnO2, VO2, NH4VO3; the positive electrode layer enhances electrical conductivity and reaction activity by doping or carbonization.

[0039] Furthermore, the total thickness of the flexible thin-film solid-state zinc-ion battery is less than 2 μm, which facilitates the integration of the flexible thin-film solid-state zinc-ion battery into a MEMS chip or a flexible wearable electronic device.

[0040] This embodiment further discloses a method for preparing a thin-film solid-state zinc ion battery based on magnetron sputtering. The method is used to prepare the above-mentioned thin-film solid-state zinc ion battery based on magnetron sputtering. The method comprises the following steps:

[0041] Step 1: Deposit a metal current collector layer, such as Cr, Pt or Au, as a conductive bottom layer on a flexible substrate (such as a PI film) by magnetron sputtering;

[0042] Step 2: Deposit a metallic zinc film on the current collector layer using magnetron sputtering, controlling deposition parameters (such as power, atmosphere, and deposition time) to obtain a dense and uniform Zn negative electrode film;

[0043] Step 3: Select an interface modification layer target and deposit a 5-50 nm thick interface modification layer on the surface of the zinc negative electrode layer by magnetron sputtering. The film structure and density can be controlled by adjusting the sputtering power, substrate temperature, and atmosphere composition (such as Ar / O2 or Ar / N2).

[0044] Step 4: Prepare a PVA-ZnSO4 gel electrolyte and evenly coat it on the interface modification layer to form a gel electrolyte layer as an ion transmission channel;

[0045] Step 5: Using magnetron sputtering to deposit MnO2 or ternary oxide material as a positive electrode active layer on the gel electrolyte layer as a positive electrode layer; constructing a complete battery structure;

[0046] Step 6: Deposit a top current collector (such as Au, Pt layer) on the positive electrode layer, encapsulate and protect the entire layer to obtain a complete flexible thin-film solid-state zinc-ion battery.

[0047] Furthermore, in step 3, the magnetron sputtering parameters of the interface modification layer include: the background vacuum degree is 0.1×10 -4 Pa~9.9×10 -4 Pa, working gas pressure is 0.40~0.50Pa, working bias is 90V, target material purity is ≥99.99%, target distance is 8~12cm, sputtering temperature is 20~30℃, and sputtering time is 2~10min; by constructing an interface modification layer with high interface stability on the surface of the zinc negative electrode, it can effectively alleviate dendrite growth, interface corrosion and hydrogen evolution reaction, and improve the electrochemical performance and structural stability of flexible devices in multiple cycles and multiple bending processes.

[0048] Example

[0049] Example 1: Ti metal modified layer enhances interface stability

[0050] This embodiment aims to suppress side reactions and dendrite growth at the Zn negative electrode interface by constructing a Ti metal modification layer.

[0051] Materials preparation:

[0052] A 25 μm-thick polyimide flexible substrate was ultrasonically cleaned in ethanol and deionized water for 15 minutes each, then air-dried and set aside. A Cu current collector layer (approximately 50 nm thick) and a Zn cathode layer (approximately 150 nm thick) were sequentially deposited using a magnetron sputtering system. The Cu and Zn layers were deposited using DC sputtering to enhance deposition rate control.

[0053] Ti modification layer deposition:

[0054] The purity of Ti target is 99.99%. -4 Under the conditions of 120W RF sputtering, a target-substrate distance of 10cm, an operating pressure of 0.5Pa, and a sputtering time of 5 minutes, a Ti modified layer with a thickness of about 15nm was obtained. The Ti layer covered the Zn surface, forming a complete and continuous metal interface film.

[0055] Battery assembly and testing:

[0056] PEO-ZnSO4 gel electrolyte was coated on the surface of the deposited Zn negative electrode, and then magnetron sputtering was used to prepare the MnO2 positive electrode and Pt electrode to prepare a flexible zinc ion thin film battery.

[0057] MnO2 modified layer deposition:

[0058] The purity of MnO2 target is 99.99%. -4 The RF sputtering was started under the conditions of 120W, 10cm target-substrate distance, 0.5Pa working pressure, 300℃ sputtering temperature and 30min sputtering time to obtain a MnO2 positive electrode layer with a thickness of about 1μm.

[0059] Example 2: Construction of dielectric AlN modified layer

[0060] In this embodiment, a high dielectric constant AlN dielectric layer is constructed to isolate electrons from direct contact with the electrolyte, reduce side reactions, and allow Zn 2+ Smooth migration.

[0061] Materials preparation:

[0062] A 25 μm-thick polyimide flexible substrate was ultrasonically cleaned in ethanol and deionized water for 15 minutes each, then air-dried and set aside. A Cu current collector layer (approximately 50 nm thick) and a Zn cathode layer (approximately 150 nm thick) were sequentially deposited using a magnetron sputtering system. The Cu and Zn layers were deposited using DC sputtering to enhance deposition rate control.

[0063] AlN modification layer deposition:

[0064] The purity of AlN target is 99.99%. -4 Under the conditions of 150W RF sputtering, a target-substrate distance of 10cm, an operating pressure of 0.5Pa, and a sputtering time of 5 minutes, a 25nm thick AlN modified layer was obtained. The AlN layer covered the Zn surface, forming a complete and continuous metal interface film.

[0065] Battery assembly and testing:

[0066] PEO-ZnSO4 gel electrolyte was coated on the surface of the deposited Zn negative electrode, and then magnetron sputtering was used to prepare the MnO2 positive electrode and Pt electrode to prepare a flexible zinc ion thin film battery.

[0067] MnO2 modified layer deposition:

[0068] The purity of MnO2 target is 99.99%. -4The RF sputtering was started under the conditions of 120W, 10cm target-substrate distance, 0.5Pa working pressure, 300℃ sputtering temperature and 30min sputtering time to obtain a MnO2 positive electrode layer with a thickness of about 1μm.

[0069] Example 3: MoO2 metal oxide regulates interface ion distribution

[0070] By constructing a conductive metal oxide MoO2 layer, the Zn 2+ The local deposition behavior of Zn anode is improved, and the uniformity of Zn negative electrode interface deposition is improved.

[0071] A 25 μm-thick polyimide flexible substrate was ultrasonically cleaned in ethanol and deionized water for 15 minutes each, then air-dried and set aside. A Cu current collector layer (approximately 50 nm thick) and a Zn cathode layer (approximately 150 nm thick) were sequentially deposited using a magnetron sputtering system. The Cu and Zn layers were deposited using DC sputtering to enhance deposition rate control.

[0072] MoO2 modified layer deposition:

[0073] The purity of MoO2 target is 99.99%. -4 Under the conditions of 150W RF sputtering, a target-substrate distance of 10cm, an operating pressure of 0.5Pa, and a sputtering time of 5 minutes, a MoO2 modified layer with a thickness of about 25nm was obtained. The MoO2 layer covered the Zn surface, forming a complete and continuous metal interface film.

[0074] Battery assembly and testing:

[0075] PEO-ZnSO4 gel electrolyte was coated on the surface of the deposited Zn negative electrode, and then magnetron sputtering was used to prepare the MnO2 positive electrode and Pt electrode to prepare a flexible zinc ion thin film battery.

[0076] MnO2 modified layer deposition:

[0077] The purity of MnO2 target is 99.99%. -4 The RF sputtering was started under the conditions of 120W, 10cm target-substrate distance, 0.5Pa working pressure, 300℃ sputtering temperature and 30min sputtering time to obtain a MnO2 positive electrode layer with a thickness of about 1μm.

[0078] Example 4: Cu-Mg bimetallic synergistic modification layer

[0079] The double-target co-sputtering technology is used to construct a Cu-Mg bimetallic composite modification layer on the Zn negative electrode to improve the electronic conductivity and Zn 2+ Affinity.

[0080] Materials preparation:

[0081] A 25 μm-thick polyimide flexible substrate was ultrasonically cleaned in ethanol and deionized water for 15 minutes each, then air-dried and set aside. A Cu current collector layer (approximately 50 nm thick) and a Zn cathode layer (approximately 150 nm thick) were sequentially deposited using a magnetron sputtering system. The Cu and Zn layers were deposited using DC sputtering to enhance deposition rate control.

[0082] Cu-Mg modification layer deposition:

[0083] The Cu target and Mg target were placed on both sides with power of 100 W and 80 W respectively, and RF co-sputtering was used. The gas pressure was 0.5 Pa and the vacuum degree was 4.0×10 -4 Pa, sputtering time 6min, synthesize a Cu-Mg composite layer with a thickness of about 20nm. Battery assembly and testing:

[0084] PEO-ZnSO4 gel electrolyte was coated on the surface of the deposited Zn negative electrode, and then magnetron sputtering was used to prepare the MnO2 positive electrode and Pt electrode to prepare a flexible zinc ion thin film battery.

[0085] MnO2 modified layer deposition:

[0086] The purity of MnO2 target is 99.99%. -4 The RF sputtering was started under the conditions of 120W, 10cm target-substrate distance, 0.5Pa working pressure, 300℃ sputtering temperature and 30min sputtering time to obtain a MnO2 positive electrode layer with a thickness of about 1μm.

[0087] Table 1

[0088]

[0089] As shown in Table 1, this embodiment conducts integrated innovation from the two dimensions of thin-film battery structure and interface science, and applies magnetron sputtering technology to the interface regulation of the Zn negative electrode surface in a breakthrough manner, significantly improving the long-standing problems of hydrogen evolution, short circuit and short life in thin-film solid-state zinc ion batteries.

[0090] The interface modification strategy of this embodiment not only improves the battery cycle life by more than 1,000 cycles, but is also applicable to battery systems with a thickness of less than 2 μm, meeting the dual challenges of safety and stability of next-generation miniaturized / flexible / integrated electronic devices.

[0091] In summary, the present invention can effectively alleviate dendrite growth, interface corrosion and hydrogen evolution reaction by constructing an interface modification layer with high interface stability on the surface of the zinc negative electrode, thereby improving the electrochemical performance and structural stability of flexible devices during multiple cycles and multiple bending processes.

[0092] It should be emphasized that the above are only preferred embodiments of the present invention and do not limit the present invention in any form. Any simple modifications, equivalent changes and modifications made to the above embodiments based on the technical essence of the present invention are still within the scope of the technical solution of the present invention.

Claims

1. A thin film solid-state zinc ion battery based on magnetron sputtering, characterized in that: The invention comprises, in sequence: a current collector layer, a zinc negative electrode layer, a gel electrolyte layer and a positive electrode layer; an interface modification layer is further provided between the zinc negative electrode layer and the gel electrolyte layer; the zinc negative electrode layer, the interface modification layer and the positive electrode layer are all deposited by magnetron sputtering.

2. A thin film solid-state zinc ion battery based on magnetron sputtering according to claim 1, characterized in that: The interface modification layer includes: a metal interface layer, a metal oxide interface layer, and a metal nitride interface layer; The target material of the metal interface layer includes one or more of Mg, Ca, Sr, Sc, Y, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Tc, Ru, Co, Rh, Cu, Ag, Cd, Al, In, Si, Ge, and Sn; The target material of the metal oxide interface layer includes one or more of MgO, CaO, SrO, Sc2O3, Y2O3, TiO2, ZrO2, HfO2, V2O3, NbO2, TaO2, Cr2O3, MoO2, WO2, MnO2, Tc2O3, RuO2, Co3O2, Rh3O2, CuO, Ag2O, CdO, Al2O3, In2O3, SiO2, GeO2, and SnO2; The target material of the metal nitride interface layer includes one or more of Mg3N2, Ca3N2, Sr3N2, ScN, YN, Ti3N2, Zr3N2, Hf3N2, VN, Nb3N2, Ta3N2, CrN, Mo3N2, WN, Mn3N2, TcN, Ru3N2, CoN, RhN, Cu3N, Ag3N, CdN, AlN, InN, Si3N4, Ge3N4, and Sn3N4.

3. The thin film solid-state zinc ion battery based on magnetron sputtering according to claim 1, characterized in that: The thickness of the interface modification layer is 5 to 50 nm.

4. The thin film solid-state zinc ion battery based on magnetron sputtering according to claim 1, characterized in that: The electrolyte system of the gel electrolyte layer includes: a PVA-ZnSO4 system and a PEO-ZnSO4 system.

5. The thin film solid-state zinc ion battery based on magnetron sputtering according to claim 1, characterized in that: The materials of the positive electrode layer include: MnO2, VO2, NH4VO3; the positive electrode layer is enhanced in conductivity and reaction activity by doping or carbonization.

6. The thin film solid-state zinc ion battery based on magnetron sputtering according to claim 1, characterized in that: The total thickness of the thin film solid-state zinc ion battery is less than 2 μm.

7. A method for preparing a thin film solid-state zinc ion battery based on magnetron sputtering, characterized in that: The preparation method is used to prepare a thin-film solid-state zinc ion battery based on magnetron sputtering according to any one of claims 1 to 6, and the preparation method comprises the following steps: Step 1: Depositing a metal current collector layer as a conductive bottom layer on a flexible substrate by magnetron sputtering; Step 2: depositing a metal zinc film on the current collector layer by magnetron sputtering to obtain a zinc negative electrode layer; Step 3: Select a target material and deposit an interface modification layer on the surface of the zinc negative electrode layer by magnetron sputtering; Step 4: preparing a gel electrolyte and coating it on the interface modification layer to form a gel electrolyte layer as an ion transmission channel; Step 5: using magnetron sputtering to deposit MnO2 or ternary oxide material as a positive electrode active layer on the gel electrolyte layer as a positive electrode layer; Step 6: Deposit a top current collector on the positive electrode layer and encapsulate and protect the entire structure to obtain a flexible thin-film solid-state zinc-ion battery.

8. The method for preparing a thin film solid-state zinc ion battery based on magnetron sputtering according to claim 7, characterized in that: In step 3, the magnetron sputtering parameters of the interface modification layer include: the background vacuum degree is 0.1×10 -4 Pa~9.9×10 -4 Pa, working gas pressure is 0.40-0.50 Pa, working bias voltage is 90 V, target material purity is ≥99.99%, target distance is 8-12 cm, sputtering temperature is 20-30° C., and sputtering time is 2-10 min.

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