Thermoelectric power generation module with high conversion efficiency and thermoelectric generator

Abstract

The invention discloses a thermoelectric power generation module with high conversion efficiency and a thermoelectric generator, and the thermoelectric power generation module comprises a lower layer ceramic substrate, a first middle layer ceramic substrate, a second middle layer ceramic substrate and an upper layer ceramic substrate which are sequentially arranged to form three interlayer regions. The copper electrodes are arranged between every two adjacent layers of ceramic substrates, the thermoelectric elements are arranged on the copper electrodes and are in one-to-one correspondence, the thermoelectric elements comprise thermoelectric P elements and thermoelectric N elements, and the thermoelectric P elements and the thermoelectric N elements are alternately arranged; the thermoelectric P element and the thermoelectric N element in the same interlayer region are connected in an electric series connection and thermal parallel connection manner; the thermoelectric P elements and the thermoelectric N elements in different interlayer regions are connected in a thermal series connection mode and are connected in an electric series connection or electric parallel connection mode; and the thermoelectric merit figure peak temperature zones of the thermoelectric elements in different interlayer regions are sequentially increased or decreased from the upper layer direction to the lower layer direction to form a temperature gradient, so that the power density has higher expandability.

Description

Technical Field

[0001] The present invention relates to the field of thermoelectricity, and in particular to a thermoelectric power generation module and a thermoelectric generator with high conversion efficiency. Background Art

[0002] The worldwide energy and environmental crisis urgently demands clean and sustainable energy sources. Thermoelectric generators, capable of directly converting heat into electricity, have the potential to provide a sustainable path to power harvesting from various industrial sectors at power levels ranging from microwatts to tens / hundreds of kilowatts, or even megawatts. Their impact could be widespread across numerous applications, including healthcare, wearable electronics, building monitoring, the Internet of Things, refrigeration, thermal management, space missions, transportation, and various industrial sectors, holding great promise in addressing the growing issue of energy sustainability. Currently, the price, toxicity, scarcity, and low efficiency of leading thermoelectric (TE) materials hinder their large-scale development. Thermoelectric energy conversion efficiency depends largely on the material's properties, which are quantified by the dimensionless figure of merit (ZT). Therefore, a central issue in thermoelectric material research is the continuous improvement of ZT values.

[0003] Over the past two decades, our fundamental understanding of electrical and thermal transport has improved. This understanding, aided by micro- and nanotechnology, has led to substantial performance enhancements in electrical and thermal (TE) materials. Bismuth telluride-based low-dimensional materials have emerged as promising candidates for TEs due to their ability to maintain low thermal conductivity and high electrical conductivity. Bismuth telluride-based TE generators, which are highly compatible with MEMS processing and exhibit low contamination (unlike Pb), are also increasingly being fabricated and reported.

[0004] Thermoelectric (TE) phenomena are also known as thermoelectricity. In 1822, Thomas Seebeck discovered the thermoelectromotive force effect (the principle of electricity generation using TE materials); in 1834, Jean Peltier discovered the cooling effect at the interface between two conductors of different materials in a current loop (the principle of refrigeration using TE materials). Several promising semiconductor TE materials were discovered in the 1950s. Materials with a ZT (Zorbital Temperature) ≥ 0.5 are generally referred to as TE materials. The higher the ZT, the higher the efficiency of the TE device. To overcome the lack of high-ZT TE materials, researchers have turned to the structural design of natural TE materials and the development of artificially synthesized TE materials—low-dimensional thermoelectric materials. Theoretical studies in mesoscopic physics have shown that, under the same operating conditions, low-dimensional thin-film TE materials exhibit higher ZT values than other bulk materials.

[0005] To date, there are three typical types of low-dimensional thin film TE materials: (1) quantum-dot structures, which use quantum-confinement effects to increase the density of states near the Fermi level, thereby improving the electrical conductivity of the material; (2) phonon-blocking / electron-transmitting superlattices, which reduce the lattice thermal conductivity (kL) of the material by introducing the so-called "acoustic-mismatch" between the superlattice components. Unlike conventional TE alloy materials, materials of this type of structure usually have significantly reduced carrier scattering rates, that is, they obtain high electrical conductivity; (3) thin film structure materials that use the thermonic effects in semiconductor heterostructures to improve the ZT value of the material. Hicks and Dresslhaus proposed that quantum well superlattices can significantly improve the ZT value of the material, and quantum wire superlattices can even bring about an even greater improvement.

[0006] The main materials used in thermoelectric power generation modules include bismuth intermetallic compounds such as bismuth telluride (Bi2Te3), lead telluride (PtTe), zinc antimonide (ZnSb), germanium, and iron silicide (FeSi2). Bi2Te3-based compounds, in particular, exhibit high ZT values at relatively low temperatures, increasing from room temperature to approximately 450K, and are currently the most widely used thermoelectric conversion materials. The research on novel low-dimensional TE structures holds significant theoretical and applied value. The discovery of high ZT materials (ZT > 4) will revolutionize the refrigeration, energy, and semiconductor microelectronics industries. Although quantum dots or superlattice materials can produce thermoelectric materials with dimensionless figures of merit exceeding 2, their application is limited by the complex process, high cost, and difficulty in mass production of devices made from these structures. Therefore, given the technical bottleneck of achieving significant improvements in thermoelectric material performance in the short term, developing thermoelectric devices that fully utilize effective temperature difference structures may be a more realistic path to the industrial application of thermoelectric materials. In the traditional structure of bismuth telluride-based TE generators, it is difficult for thermoelectric devices to effectively utilize the temperature difference between the external heat source and the cold end due to the thickness limitation in the direction perpendicular to the device plane, and their thermoelectric conversion capabilities cannot be exerted. In addition, the full temperature difference of a single thermoelectric element in a single-layer device will also lead to a decrease in its average thermoelectric figure of merit.

[0007] The disclosure of the above background technology content is only used to assist in understanding the concept and technical solution of this application. It does not necessarily belong to the prior art of this application, nor does it necessarily provide technical guidance. In the absence of clear evidence that the above content has been disclosed before the filing date of this application, the above background technology should not be used to evaluate the novelty and creativity of this application. Summary of the Invention

[0008] The purpose of the present invention is to provide a thermoelectric power generation module with high conversion efficiency, which adopts the design technology of laminated planar structure device, effectively utilizes regional temperature difference to carry out efficient waste heat recovery and power generation, and obtains high power density output.

[0009] In order to achieve the above object, the technical solution adopted by the present invention is as follows:

[0010] A high-conversion-efficiency thermoelectric power generation module comprises a lower ceramic substrate, a first intermediate ceramic substrate, a second intermediate ceramic substrate, and an upper ceramic substrate arranged from bottom to top, and further comprising a plurality of copper electrodes disposed between two adjacent ceramic substrates and thermoelectric elements disposed on the copper electrodes in a one-to-one correspondence, the thermoelectric elements comprising thermoelectric P elements and thermoelectric N elements, the thermoelectric P elements and the thermoelectric N elements being arranged alternately;

[0011] The lower ceramic substrate, the first intermediate ceramic substrate, the second intermediate ceramic substrate and the upper ceramic substrate form three interlayer regions, and the thermoelectric P elements and the thermoelectric N elements in the same interlayer region are connected in electrical series and thermal parallel.

[0012] Thermoelectric P elements and thermoelectric N elements in different interlayer regions are connected in thermal series and in electrical series or in electrical parallel.

[0013] The thermoelectric figure of merit peak temperature zones of thermoelectric elements in different interlayer regions increase or decrease in sequence from the upper layer to the lower layer.

[0014] Furthermore, based on any one of the technical solutions or a combination of multiple technical solutions described above, the thermoelectric figure of merit peak temperature zones of the thermoelectric elements in the three interlayer regions are 125°C-150°C, 85°C-100°C and 50°C-70°C respectively.

[0015] Furthermore, according to any one of the technical solutions or a combination of multiple technical solutions described above, the room temperature figures of merit of the thermoelectric P element and the thermoelectric N element are both greater than 1.0.

[0016] Furthermore, based on any one of the technical solutions or a combination of multiple technical solutions described above, the geometric factor of the thermoelectric P element and / or the thermoelectric N element is variable in the range of 0.17 cm-0.29 cm.

[0017] Furthermore, based on any one of the technical solutions or a combination of multiple technical solutions described above, the heights of the thermoelectric P elements and the thermoelectric N elements in different interlayer regions are the same or different, and the height difference between the thermoelectric P elements and the thermoelectric N elements in the same interlayer region is less than or equal to 0.8 μm.

[0018] Furthermore, based on any one of the technical solutions or a combination of multiple technical solutions described above, the thermoelectric P elements and the thermoelectric N elements in different interlayer regions are connected in electrical parallel, and an anti-backflow diode is connected in series to each interlayer region.

[0019] Furthermore, according to any one of the technical solutions or a combination of multiple technical solutions described above, the number of pairs of thermoelectric P elements and thermoelectric N elements in each interlayer region ranges from 71 to 241.

[0020] Furthermore, based on any one of the above technical solutions or a combination of multiple technical solutions, the optimization rules for the thermal resistance of the thermoelectric element, the thickness of the ceramic substrate, and the thickness of the copper electrode satisfy:

[0021] △T=J h (R c1 +R Cu1 +R p,n；1 +R Cu2 +R c2 +R Cu3 +R p,n；2 +R Cu4 +R c3 +R Cu5 +R p,n；3 +R Cu6 +R c4 ); where ΔT is the temperature difference between the upper and lower layers of the thermoelectric power generation module, J h is the heat flux density through the thermoelectric power generation module in the direction of temperature gradient, R c1 is the thickness of the lower ceramic substrate, R c2 is the thickness of the first intermediate layer ceramic substrate, R c3 is the thickness of the second intermediate layer ceramic substrate, R c4 is the thickness of the upper ceramic substrate; R Cu1 is the thickness of the copper electrode on the upper surface of the lower ceramic substrate, R Cu2 is the thickness of the copper electrode on the lower surface of the first intermediate layer ceramic substrate, R Cu3 is the thickness of the copper electrode on the upper surface of the first intermediate layer ceramic substrate, R Cu4 is the thickness of the copper electrode on the lower surface of the second intermediate layer ceramic substrate, R Cu5 is the thickness of the copper electrode on the upper surface of the second intermediate layer ceramic substrate, R Cu6 is the thickness of the copper electrode on the lower surface of the upper ceramic substrate; R p,n；1 is the thermal resistance of the thermoelectric element between the lower ceramic substrate and the first intermediate ceramic substrate, Rp,n；2 is the thermal resistance of the thermoelectric element between the first intermediate ceramic substrate and the second intermediate ceramic substrate, R p,n；3 is the thermal resistance corresponding to the thermoelectric element between the second intermediate ceramic substrate and the upper ceramic substrate.

[0022] Furthermore, based on any one of the above technical solutions or a combination of multiple technical solutions, the copper electrode is prepared on a ceramic substrate using a direct copper bonding process, and the ceramic substrate is made of 96 aluminum oxide or aluminum nitride material;

[0023] The two-dimensional plane size of the ceramic substrate ranges from 30 mm × 30 mm to 55 mm × 55 mm, and the thickness ranges from 0.5 mm to 0.75 mm;

[0024] The two-dimensional plane size of the copper electrode ranges from 1.2 mm×3.0 mm to 1.6 mm×4.0 mm, and the thickness ranges from 0.3 mm to 0.4 mm.

[0025] According to another aspect of the present invention, a thermoelectric generator is provided, comprising a plurality of thermoelectric power generation modules as described above.

[0026] The beneficial effects brought about by the technical solution provided by the present invention are as follows:

[0027] a. The design technology for stacked planar structure devices not only effectively utilizes regional temperature differences for efficient waste heat recovery and power generation, but also achieves high power density (electrical power output per square meter) that is unattainable with current photovoltaic technology;

[0028] b. The investment payback period of waste heat recovery equipment is short;

[0029] c. It has a wide range of uses and can be widely used in heat recovery in various fields such as industrial waste heat, geothermal energy, and deep-sea temperature difference energy, and then obtain ready-to-use power based on thermoelectric conversion. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments recorded in this application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0031] Figure 1 A schematic structural diagram of a thermoelectric power generation module provided as an exemplary embodiment of the present invention. DETAILED DESCRIPTION

[0032] In order to enable those skilled in the art to better understand the solutions of the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the embodiments described are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts should fall within the scope of protection of the present invention.

[0033] It should be noted that the terms "first", "second", etc. in the description and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that the numbers used in this way can be interchanged where appropriate, so that the embodiments of the present invention described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions. For example, a process, method, apparatus, product or device that includes a series of steps or units is not necessarily limited to those steps or units clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0034] In one embodiment of the present invention, a high conversion efficiency thermoelectric power generation module is provided, such as Figure 1 As shown, the thermoelectric power generation module includes a lower ceramic substrate 100, a first intermediate ceramic substrate 200, a second intermediate ceramic substrate 300 and an upper ceramic substrate 400 arranged from bottom to top. A circular hole can be provided at the center of the ceramic substrate to facilitate the installation and fixation of the power generation module in the generator set; the thermoelectric power generation module also includes a plurality of copper electrodes arranged between two adjacent layers of ceramic substrates and thermoelectric elements arranged on the copper electrodes and corresponding to each other. The thermoelectric elements include thermoelectric P elements 610 and thermoelectric N elements 620, and the thermoelectric P elements 610 and the thermoelectric N elements 620 are arranged alternately; the number of pairs of thermoelectric P elements 610 and thermoelectric N elements 620 in each interlayer region ranges from 71 to 241.

[0035] The copper electrode is prepared on a ceramic substrate using a direct bonded copper (DBC) process, the copper of the DBC is pure copper, and the ceramic substrate is made of 96 alumina or aluminum nitride material; the two-dimensional plane size of the ceramic substrate ranges from 30mm×30mm to 55mm×55mm, preferably 40mm×40mm, and the thickness ranges from 0.5mm to 0.75mm, preferably 0.75mm; the two-dimensional plane size of the copper electrode ranges from 1.2mm×3.0mm to 1.6mm×4.0mm, preferably 1.5mm×3.6mm, and the thickness ranges from 0.3mm to 0.4mm, preferably 0.3mm.

[0036] The lower ceramic substrate 100, the first intermediate ceramic substrate 200, the second intermediate ceramic substrate 300, and the upper ceramic substrate 400 form three interlayer regions. The thermoelectric P element 610 and the thermoelectric N element 620 in the same interlayer region are connected in electrical series and thermal parallel. Two copper bars 500 are led out from each interlayer region on both sides of the module as electrodes, which are led out from a copper electrode.

[0037] The thermoelectric P elements 610 and the thermoelectric N elements 620 in different interlayer regions are connected in thermal series and in electrical series or in parallel. If the electrical parallel connection is adopted, an anti-backflow diode is connected in series to each interlayer region.

[0038] The thermoelectric figure of merit peak temperature zones of thermoelectric elements in different interlayer regions increase or decrease in sequence from the upper layer to the lower layer.

[0039] Specifically, the thermoelectric figure of merit peak temperature zones of the thermoelectric elements in the three interlayer regions are 125°C-150°C, 85°C-100°C and 50°C-70°C respectively, the room temperature figure of merit coefficients of the thermoelectric P element 610 and the thermoelectric N element 620 are both greater than 1.0, and the geometric factors of the thermoelectric P element 610 and / or the thermoelectric N element 620 are variable in the range of 0.17cm-0.29cm.

[0040] The heights of the thermoelectric P elements 610 and the thermoelectric N elements 620 in different interlayer regions may be the same or different. The height difference between the thermoelectric P elements 610 and the thermoelectric N elements 620 in the same interlayer region is less than or equal to 0.8 μm.

[0041] In a specific embodiment, the optimization rules for the thermal resistance of the thermoelectric element, the thickness of the ceramic substrate, and the thickness of the copper electrode satisfy:

[0042] △T=J h (R c1 +R Cu1 +R p,n；1 +R Cu2 +R c2 +R Cu3 +R p,n；2 +R Cu4 +R c3 +R Cu5 +R p,n；3 +R Cu6 +R c4 ); where ΔT is the temperature difference between the upper and lower layers of the thermoelectric power generation module, J h is the heat flux density through the thermoelectric power generation module in the direction of temperature gradient, R c1 is the thickness of the lower ceramic substrate 100, R c2 is the thickness of the first intermediate ceramic substrate 200, R c3is the thickness of the second intermediate ceramic substrate 300, R c4 is the thickness of the upper ceramic substrate 400; R Cu1 is the thickness of the copper electrode on the upper surface of the lower ceramic substrate 100, R Cu2 is the thickness of the copper electrode on the lower surface of the first intermediate ceramic substrate 200, R Cu3 is the thickness of the copper electrode on the upper surface of the first intermediate ceramic substrate 200, R Cu4 is the thickness of the copper electrode on the lower surface of the second intermediate ceramic substrate 300, R Cu5 is the thickness of the copper electrode on the upper surface of the second intermediate ceramic substrate 300, R Cu6 is the thickness of the copper electrode on the lower surface of the upper ceramic substrate 400; R p,n；1 is the thermal resistance of the thermoelectric element between the lower ceramic substrate 100 and the first intermediate ceramic substrate 200, R p,n；2 is the thermal resistance of the thermoelectric element between the first intermediate ceramic substrate 200 and the second intermediate ceramic substrate 300, R p,n；3 is the thermal resistance corresponding to the thermoelectric element between the second intermediate ceramic substrate 300 and the upper ceramic substrate 400.

[0043] The high-conversion-efficiency thermoelectric power generation module provided by the embodiments of the present invention can achieve a high power density (electrical power output per square meter) output that is not achievable with current photovoltaic technology. Its thermoelectric conversion efficiency is greater than 6.0% @ ΔT = 80°C and 7.5% @ ΔT = 120°C. A specific numerical embodiment is as follows: The four-layer ceramic substrate (lower ceramic substrate 100, first intermediate ceramic substrate 200, second intermediate ceramic substrate 300, and upper ceramic substrate 400) is made of 96 aluminum oxide or aluminum nitride. The two-dimensional planar dimensions and thickness of the ceramic substrate are 40 mm * 40 mm and 0.75 mm, respectively. The copper of the DBC is pure copper. The planar dimensions and thickness of the copper electrode sheet are 1.5 mm * 3.6 mm and 0.3 mm, respectively. Each layer uses 161 pairs of P and N thermoelectric elements. The geometric factor of the P and N thermoelectric elements is 0.182cm. The height of each layer of thermoelectric elements is 1.24mm. The interlayer circuit connection adopts parallel connection to obtain low-voltage, high-current output signals to ensure the safety of equipment insulation wires and human body. The peak figure of merit of the thermoelectric elements in the three interlayer areas correspond to temperatures of 125℃, 85℃ and 50℃ respectively. The thermoelectric conversion efficiency of the module reaches 6.3%@ΔT=80℃ and 7.6%@ΔT=120℃.

[0044] According to another aspect of the present invention, a thermoelectric generator is provided, comprising a plurality of thermoelectric power generation modules as described above.

[0045] Ultimately, the potential difference is further expanded, thereby increasing power generation. It should be noted that the Seebeck effect belongs to the existing technology. The cause of the Seebeck effect can be simply explained as the carriers in the conductor moving from the hot end to the cold end under the temperature gradient and accumulating at the cold end, thereby forming a potential difference inside the material. At the same time, under the action of this potential difference, a reverse charge flow is generated. When the charge flow of thermal motion reaches a dynamic equilibrium with the internal electric field, a stable thermoelectric potential is formed at both ends of the semiconductor. There are two types of carriers in the semiconductor: electrons and holes.

[0046] The present invention provides a high-conversion-efficiency thermoelectric power generation module and thermoelectric generator utilizing an innovative device structure to achieve a bismuth telluride-based thermoelectric generator. This novel design concept utilizes the steep temperature gradient formed near the main heat flux, resulting in a more scalable power density compared to traditional single-layer planar bismuth telluride-based thermoelectric generators. The laminated planar structure of the thermoelectric device designed in this patent significantly enhances the performance of semiconductor thermoelectric devices and can be widely used in industrial applications such as energy conservation and emission reduction, waste heat recovery, deep-sea underwater monitoring, and high-power power platforms.

[0047] It should be noted that, in this document, relational terms such as first and second, etc., are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply the existence of any such actual relationship or order between these entities or operations. Moreover, the terms "comprises," "comprising," or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article, or device comprising a series of elements includes not only those elements, but also other elements not explicitly listed, or elements inherent to such process, method, article, or device. In the absence of further limitations, an element defined by the phrase "comprising a ..." does not exclude the presence of other identical elements in the process, method, article, or device comprising the element.

[0048] The above is only a specific implementation method of the present application. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the principles of the present application. These improvements and modifications should also be regarded as the scope of protection of the present application.

Claims

1. A thermoelectric power generation module with high conversion efficiency, characterized in that: The invention comprises a lower ceramic substrate, a first intermediate ceramic substrate, a second intermediate ceramic substrate, and an upper ceramic substrate arranged from bottom to top, and further comprises a plurality of copper electrodes disposed between two adjacent ceramic substrates and thermoelectric elements disposed on the copper electrodes and corresponding to each other, wherein the thermoelectric elements include thermoelectric P elements and thermoelectric N elements, and the thermoelectric P elements and the thermoelectric N elements are arranged alternately; The lower ceramic substrate, the first intermediate ceramic substrate, the second intermediate ceramic substrate and the upper ceramic substrate form three interlayer regions, and the thermoelectric P elements and the thermoelectric N elements in the same interlayer region are connected in electrical series and thermal parallel. Thermoelectric P elements and thermoelectric N elements in different interlayer regions are connected in thermal series and in electrical series or in electrical parallel. The thermoelectric figure of merit peak temperature zones of thermoelectric elements in different interlayer regions increase or decrease in sequence from the upper layer to the lower layer.

2. The high conversion efficiency thermoelectric power generation module according to claim 1, characterized in that: The thermoelectric figure of merit peak temperature zones of the thermoelectric elements in the three interlayer regions are 125° C.-150° C., 85° C.-100° C. and 50° C.-70° C. respectively.

3. The high conversion efficiency thermoelectric power generation module according to claim 1, characterized in that: The room temperature merit coefficients of the thermoelectric P element and the thermoelectric N element are both greater than 1.

0.

4. The thermoelectric power generation module with high conversion efficiency according to claim 1, characterized in that: The geometric factor of the thermoelectric P element and / or the thermoelectric N element can be varied within a range of 0.17 cm to 0.29 cm.

5. The thermoelectric power generation module with high conversion efficiency according to claim 1, characterized in that: The heights of the thermoelectric P elements and the thermoelectric N elements in different interlayer regions are the same or different, and the height difference between the thermoelectric P elements and the thermoelectric N elements in the same interlayer region is less than or equal to 0.8 μm.

6. The high conversion efficiency thermoelectric power generation module according to claim 1, characterized in that: The thermoelectric P elements and the thermoelectric N elements in different interlayer regions are connected in electrical parallel, and an anti-backflow diode is connected in series to each interlayer region.

7. The thermoelectric power generation module with high conversion efficiency according to claim 1, characterized in that: The number of pairs of thermoelectric P elements and thermoelectric N elements in each interlayer region ranges from 71 to 241.

8. The high conversion efficiency thermoelectric power generation module according to any one of claims 1 to 7, characterized in that: The optimization rules for the thermal resistance of the thermoelectric element, the thickness of the ceramic substrate, and the thickness of the copper electrode satisfy: △T=J h (R c1 +R Cu1 +R p,n；1 +R Cu2 +R c2 +R Cu3 +R p,n；2 +R Cu4 +R c3 +R Cu5 +R p,n；3 +R Cu6 +R c4 ); where ΔT is the temperature difference between the upper and lower layers of the thermoelectric power generation module, J h is the heat flux density through the thermoelectric power generation module in the direction of temperature gradient, R c1 is the thickness of the lower ceramic substrate, R c2 is the thickness of the first intermediate layer ceramic substrate, R c3 is the thickness of the second intermediate layer ceramic substrate, R c4 is the thickness of the upper ceramic substrate; R Cu1 is the thickness of the copper electrode on the upper surface of the lower ceramic substrate, R Cu2 is the thickness of the copper electrode on the lower surface of the first intermediate layer ceramic substrate, R Cu3 is the thickness of the copper electrode on the upper surface of the first intermediate layer ceramic substrate, R Cu4 is the thickness of the copper electrode on the lower surface of the second intermediate layer ceramic substrate, R Cu5 is the thickness of the copper electrode on the upper surface of the second intermediate layer ceramic substrate, R Cu6 is the thickness of the copper electrode on the lower surface of the upper ceramic substrate; R p,n；1 is the thermal resistance of the thermoelectric element between the lower ceramic substrate and the first intermediate ceramic substrate, R p,n；2 is the thermal resistance of the thermoelectric element between the first intermediate ceramic substrate and the second intermediate ceramic substrate, R p,n；3 is the thermal resistance corresponding to the thermoelectric element between the second intermediate ceramic substrate and the upper ceramic substrate.

9. The high conversion efficiency thermoelectric power generation module according to any one of claims 1 to 7, characterized in that: The copper electrode is prepared on a ceramic substrate using a direct copper bonding process, and the ceramic substrate is made of 96 aluminum oxide or aluminum nitride material; The two-dimensional plane size of the ceramic substrate ranges from 30 mm × 30 mm to 55 mm × 55 mm, and the thickness ranges from 0.5 mm to 0.75 mm; The two-dimensional plane size of the copper electrode ranges from 1.2 mm×3.0 mm to 1.6 mm×4.0 mm, and the thickness ranges from 0.3 mm to 0.4 mm.

10. A thermoelectric generator, characterized in that: The invention comprises a plurality of thermoelectric power generation modules according to any one of claims 1 to 9.

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