Radio frequency front-end module and electronic equipment

Abstract

The embodiment of the invention provides a radio frequency front-end module and electronic equipment. The radio frequency front end module comprises a substrate, a shielding structure and a radio frequency element. The substrate comprises one or more metal layers, the shielding structure is connected to the metal layers, the shielding structure comprises a shielding layer and a shielding side wall which are arranged above the substrate, the shielding side wall extends from the shielding layer to the substrate, and the radio frequency element is arranged on the metal layer of the substrate; wherein the one or more metal layers comprise a target metal layer, a hollowed-out area is formed on the target metal layer, the hollowed-out area is located between the projection of the radio frequency element on a target plane and the projection of the shielding side wall on the target plane, and the target plane is the plane where the target metal layer is located. The hollowed-out area can physically isolate the radio frequency element and the shielding structure, and mutual interference between the radio frequency element and the shielding structure is prevented. And a resonant cavity can be formed between the hollow area and the shielding structure, so that the out-of-band rejection effect of the radio frequency element is improved, and the performance of the radio frequency front-end module can be improved.

Description

Technical Field

[0001] The present application relates to the field of radio frequency technology, and in particular to a radio frequency front-end module and electronic equipment. Background Art

[0002] The continuous evolution of mobile communication technology is driving demand for RF front-end modules (RFFEs) with high frequency bands, large bandwidths, and complex modulation methods. Furthermore, with the rapid development of emerging fields such as the Internet of Things (IoT) and smart homes, RFFEs must also support more frequency bands and protocols to meet the needs of diverse application scenarios.

[0003] RF front-end modules are developing towards higher integration, lower power consumption, and superior performance, employing more advanced semiconductor processes and packaging technologies to enhance device integration and performance. Shielding structures can protect RF front-end modules from external high-frequency signals and potentially electromagnetic interference (EMI) from the external environment. However, interference between the shielding structure and some components within the RF front-end module can affect its performance. Summary of the Invention

[0004] The present application provides a radio frequency front-end module and an electronic device, which can prevent mutual interference between a shielding structure and components in the radio frequency front-end module and thus affect the performance of the radio frequency front-end module.

[0005] In a first aspect, an embodiment of the present application provides a radio frequency front-end module, the radio frequency front-end module comprising:

[0006] a substrate comprising one or more metal layers;

[0007] a shielding structure connected to the metal layer, the shielding structure comprising a shielding layer above the substrate and a shielding sidewall, the shielding sidewall extending from the shielding layer toward the substrate;

[0008] A radio frequency component is provided on the metal layer of the substrate;

[0009] The one or more metal layers include a target metal layer, a hollowed-out area is formed on the target metal layer, and the hollowed-out area is located between the projection of the RF element on the target plane and the projection of the shielding side wall on the target plane, and the target plane is the plane where the target metal layer is located.

[0010] In a second aspect, an embodiment of the present application provides an electronic device, which includes the aforementioned radio frequency front-end module.

[0011] The RF front-end module and electronic device provided in the embodiments of the present application include a substrate, a shielding structure, and a RF element; the substrate includes one or more metal layers, the shielding structure is connected to the metal layer, the shielding structure includes a shielding layer above the substrate and a shielding sidewall, the shielding sidewall extends from the shielding layer toward the substrate, and the RF element is arranged on the metal layer of the substrate; wherein, the one or more metal layers include a target metal layer, a hollowed-out area is formed on the target metal layer, and the hollowed-out area is located between the projection of the RF element on the target plane and the projection of the shielding sidewall on the target plane, and the target plane is the plane where the target metal layer is located. By providing a hollowed-out area in an area adjacent to the projection area of the RF element on the target metal layer, the RF element and the shielding structure, especially the RF element and the shielding sidewall, can be physically isolated to prevent mutual interference between the RF element and the shielding structure; and a resonant cavity can be formed between the hollowed-out area and the shielding structure, thereby improving the transmission characteristics of the RF element, improving the out-of-band suppression effect of the RF element, and further improving the isolation effect; thereby improving the performance of the RF front-end module.

[0012] It should be understood that the above general description and the following detailed description are merely exemplary and explanatory and do not limit the disclosure of the embodiments of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following is a brief introduction to the drawings required for use in the description of the embodiments. Obviously, the drawings described below are some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0014] Figure 1 is a schematic diagram of a radio frequency front-end module provided in an embodiment of the present application;

[0015] Figures 2 to 7 is a schematic diagram of a radio frequency front-end module in some embodiments of the present application;

[0016] Figures 8 and 9 is a schematic diagram of a grounding branch in a radio frequency front-end module in some embodiments of the present application;

[0017] Figures 10a to 12b is a schematic diagram of a grounding branch in some embodiments of the present application;

[0018] Figure 13 is a schematic diagram of grounding branches in other embodiments of the present application;

[0019] Figure 14 is a schematic diagram of the out-of-band suppression performance of the RF front-end module in some embodiments of the present application;

[0020] Figure 15 This is a schematic block diagram of an electronic device provided in an embodiment of the present application.

[0021] Description of reference numerals:

[0022] 10. Substrate; 11. Metal layer; 111. Target metal layer; 111a. First target metal layer; 111b. Second target metal layer; 1111. Hollow area; 1112. First metal area; 1113. Second metal area; 112. Ground layer; 113. Non-target metal layer; 101. Metal connection part; 12. Metal through hole; 13. Antenna port; 20. Shielding structure; 21. Shielding layer; 22. Shielding side wall; 30. RF component; 301. First RF component; 31. Antenna switch chip; 311. Output port; 32. RF power amplifier chip; 321. Bonding wire; 33. Filter; 34. Transformer; 341. First metal coil; 342. Second metal coil; 35. Low noise amplifier; 36. Controller.

[0023] 40. Grounding branch; 41. First grounding branch; 42. Second grounding branch; 43. Third grounding branch; 44. Fourth grounding branch; 45. Fifth grounding branch; 46. Sixth grounding branch; 47. Seventh grounding branch. DETAILED DESCRIPTION

[0024] The following will be combined with the drawings in the embodiments of this application to clearly and completely describe the technical solutions in the embodiments of this application. Obviously, the embodiments described are part of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of this application.

[0025] It should be understood that the present application can be implemented in various forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided to make the disclosure thorough and complete and to fully convey the scope of the present application to those skilled in the art. In the drawings, the dimensions and relative dimensions of layers and regions may be exaggerated for clarity. Like reference numerals denote like elements throughout.

[0026] In order to fully understand the present application, detailed structures and steps will be presented in the following description to illustrate the technical solutions proposed by the present application. The preferred embodiments of the present application are described in detail below. However, in addition to these detailed descriptions, the present application may also have other implementation methods.

[0027] The following describes some embodiments of the present application in detail with reference to the accompanying drawings. In the absence of conflict, the following embodiments and features therein may be combined with each other.

[0028] See also Figure 1 , Figure 1 This is a schematic block diagram of a radio frequency front-end module provided in an embodiment of the present application.

[0029] like Figure 1 As shown, the RF front-end module includes: a substrate 10 , a shielding structure 20 and a RF element 30 .

[0030] The substrate 10 of the RF front-end module includes one or more metal layers 11; when the substrate 10 includes multiple metal layers 11, adjacent metal layers 11 can be separated by an insulating dielectric layer (such as FR4, polyimide, ceramic, etc.) to reduce signal crosstalk and maintain electrical isolation.

[0031] The RF components 30 are disposed on the metal layer 11 of the substrate 10. For example, metal connecting lines (e.g., leads) may also be formed on the metal layer 11. RF components 30 and RF components 30, and RF components 30 and ports on the substrate 10 (e.g., power ports, signal input ports, and signal output ports 311) may be connected via respective metal connecting lines. For example, discrete devices and chips, chips and chips, and chips and ports may all be connected via respective metal connecting lines. In some embodiments, RF components 30 disposed on different metal layers 11 may also be connected via metal through-holes 12.

[0032] The shielding structure 20 includes a shielding layer 21 and a shielding sidewall 22 above the substrate 10. The shielding sidewall 22 extends from the shielding layer 21 toward the substrate 10. In some embodiments, the shielding layer 21 and the shielding sidewall 22 are an integral shielding structure 20. For example, Figure 1 See Figure 2 The shielding sidewalls 22 extend from at least one side of the shielding layer 21 toward the substrate 10. For example, the shielding sidewalls 22 extend from all four sides of the shielding layer 21 toward the substrate 10, and the shielding sidewalls 22 are formed on the four sides of the substrate 10. The shielding structure 20 is connected to the metal layer 11 and can shield interference signals between the RF component 30 and the outside of the RF front-end module. Exemplarily, the RF component 30 is disposed within the projection of the shielding structure 20 on the substrate 10, and the shielding structure 20 can provide electromagnetic shielding for the RF component 30.

[0033] Among them, Figures 1 to 4 As shown, the one or more metal layers 11 include a target metal layer 111, and a hollow area 1111 is formed on the target metal layer 111. The hollow area 1111 is located between the projection of the RF element 30 on the target plane and the projection of the shielding side wall 22 on the target plane. The target plane is the plane where the target metal layer 111 is located; wherein, Figure 1The substrate 10 shown includes two target metal layers 111, Figure 3 The substrate 10 shown includes a target metal layer 111 .

[0034] By setting a hollowed-out area 1111 on the target metal layer 111 in an area adjacent to the projection area of the RF element 30, the RF element 30 and the shielding structure 20, especially the RF element 30 and the shielding side wall 22, can be physically isolated to prevent mutual interference between the RF element 30 and the shielding structure 20; and a resonant cavity can be formed between the hollowed-out area 1111 and the shielding structure 20, thereby improving the transmission characteristics of the RF element 30, improving the out-of-band suppression effect of the RF element 30, and further improving the isolation effect; thereby improving the performance of the RF front-end module.

[0035] The RF component 30 may include discrete devices and / or chips (integrated circuits). In some embodiments, the RF component 30 includes a filter 33. Optionally, the filter 33 includes at least one of the following: an integrated passive device filter 33, an LC filter 33, a surface acoustic wave filter 33, a bulk acoustic wave filter 33, or a ceramic filter 33.

[0036] The filter 33 and the shielding structure 20 are prone to mutual interference, especially the mutual interference between the higher-power filter 33 and the shielding structure 20 is more serious; by providing the hollow area 1111, the mutual interference between the filter 33 and the shielding structure 20 can be prevented. Moreover, the filter 33 is mainly used to suppress the out-of-band radio frequency signal. By providing the hollow area 1111 on the target metal layer 111 around the projection area of the filter 33, the parasitic characteristics of the filter 33 looking at the ground layer 112 of the substrate 10 can be changed, so that the value of the inductance and / or capacitance inside the filter 33 changes slightly, thereby changing the overall transmission characteristics of the filter 33, and improving the out-of-band suppression characteristics of the filter 33. As an example, there is a group of LC circuits inside the filter 33 that resonate at a first frequency (such as 13 GHz). The first frequency is greater than three times the operating frequency of the filter 33 (such as 4.2 GHz), and the filter 33 has a suppression capability of -30 dB (decibel) for the first frequency. By setting the hollow area 1111, the value of the inductance and / or capacitance in the group of LC circuits can be changed. For example, increasing the value of the inductance in the group of LC circuits can make the group of LC circuits resonate at a second frequency. The second frequency is closer to three times the operating frequency of the filter 33 than the first frequency. For example, the second frequency is equal to 12.6 GHz, which can improve the suppression of the third harmonic by the filter 33.

[0037] In some embodiments, the filter 33 includes a transmitting filter and / or a receiving filter. A hollowed-out area 1111 may be provided at least in an area adjacent to the projection area of the transmitting filter on the target metal layer 111. The transmitting filter has a relatively high power, and providing the hollowed-out area 1111 may significantly improve the performance of the transmitting filter. Since the receiving filter has a relatively low power, the interference between the receiving filter and the shielding structure 20 is also relatively small. Therefore, the hollowed-out area 1111 may not be provided in an area adjacent to the projection area of the receiving filter on the target metal layer 111, thereby improving the spatial utilization of the target metal layer 111. Of course, this is not limited to this. For example, the hollowed-out area 1111 may also be provided in an area adjacent to the projection area of the receiving filter on the target metal layer 111.

[0038] In some embodiments, a hollowed-out region 1111 may be provided between the projections of two adjacent filters 33 on the metal layer, thereby improving the electrical isolation between the two adjacent filters 33. For example, a hollowed-out region 1111 may be provided between the projection of a transmit filter and the projection of a receive filter on at least one metal layer, thereby improving the electrical isolation between the transmit filter and the receive filter, thereby improving related indicators such as the isolation between the transmit and receive chains of the RF front-end module. For example, this may prevent signals in the transmit chain from interfering with signals in the receive chain.

[0039] In some embodiments, the RF component 30 includes one or more side edges, and a hollow area 1111 is provided between a projection of one or more side edges of the RF component 30 on the target plane and a projection of the shielding sidewall 22 on the target plane.

[0040] For example, Figure 1 or Figure 2 As shown, the target metal layer 111 is provided with a hollow area 1111 between the projection of the left side of the RF element 30 and the shielding side wall 22; Figure 3 or Figure 4 As shown, the target metal layer 111 is provided with a hollow area 1111 between the projection of the left side of the RF component 30 and the shielding side wall 22, and a hollow area 1111 is provided between the projection of the right side of the RF component 30 and the shielding side wall 22; Figure 5 or Figure 6 As shown, the target metal layer 111 is provided with a hollowed-out area 1111 between the projections of the four sides of the RF component 30 and the shielding sidewall 22. In some embodiments, the hollowed-out area 1111 can be provided on the sides where interference between the RF component 30 and the shielding structure 20 is more severe to isolate the interference between the RF component 30 and the shielding structure 20; if the hollowed-out area 1111 is not provided on some sides of the RF component 30, the occupancy of the target metal layer 111 can be reduced, which is conducive to the compact layout of the RF front-end module.

[0041] In some embodiments, a hollow area 1111 is provided around the outer side of the projection of the RF element 30 on the target plane. Figure 5 or Figure 6 As shown, the target metal layer 111 is provided with a hollowed-out area 1111 between the projections of the four sides of the RF component 30 and the shielding sidewall 22, and adjacent hollowed-out areas 1111 are connected, so that the hollowed-out areas 1111 corresponding to the four sides surround the outside of the projection of the RF component 30 on the target plane. This can improve the isolation effect of interference between the RF component 30 and the shielding structure 20, and can more significantly improve the transmission characteristics of the RF component 30, and enhance the out-of-band suppression effect of the RF component 30, such as the filter 33, thereby further improving the performance of the RF front-end module.

[0042] In some embodiments, as Figures 1 to 6 As shown, the hollowed-out area 1111 may be a rectangular area, but is not limited thereto. For example, the hollowed-out area 1111 may also be an arc-shaped area, an annular area, a broken-line area, etc. It should be noted that when the hollowed-out area 1111 is a rectangular area, the space utilization rate of the target metal layer 111 can be improved. For example, it can facilitate the provision of a metal area connected to the metal via 12 or a metal connection line on the target metal layer 111.

[0043] In some embodiments, as Figure 1 As shown, the width w of the hollowed-out region 1111 is greater than or equal to 30 microns, and / or the width w of the hollowed-out region 1111 is less than or equal to 50 microns. The width direction of the hollowed-out region 1111 is parallel to the direction extending from the side of the RF region toward the shielding sidewall 22. A width w of the hollowed-out region 1111 greater than or equal to 30 microns can ensure the isolation effect of interference between the RF component 30 and the shielding structure 20, and a width w of the hollowed-out region 1111 less than or equal to 50 microns can improve the space utilization of the target metal layer 111, for example, facilitating the provision of a metal region connected to the metal through-hole 12, a metal connection line, etc. on the target metal layer 111.

[0044] In some embodiments, as Figure 1As shown, the distance s between the projection of the RF element 30 on the target plane and the hollowed-out area 1111 is less than or equal to 100 microns. By arranging the hollowed-out area 1111 close to the RF element 30, the isolation effect of the hollowed-out area 1111 on the interference between the RF element 30 and the shielding structure 20 can be improved, and the hollowed-out area 1111 can more significantly improve the transmission characteristics of the RF element 30, improve the out-of-band suppression effect of the RF element 30 such as the filter 33, and thus better improve the performance of the RF front-end module. Exemplarily, the distance s between the projection of the RF element 30 on the target plane and the hollowed-out area 1111 is less than or equal to 30 microns.

[0045] Optional, such as Figure 3 As shown, the widths w of the hollowed-out regions 1111 corresponding to different sides of the RF component 30 can be the same or different. For example, the width w1 of the hollowed-out region 1111 corresponding to the left side of the RF component 30 can be the same as or different from the width w2 of the hollowed-out region 1111 corresponding to the right side of the RF component 30. For example, the widths w of the hollowed-out regions 1111 corresponding to different sides of the RF component 30 can be adjusted based on the interference strength between the different sides of the RF component 30 and the corresponding shielding sides and / or the positions of the inductors and / or capacitors in the RF component 30.

[0046] Optional, such as Figure 3 As shown, the distances s between the projections of different side edges of the RF element 30 on the target plane and the hollowed-out area 1111 can be the same or different. For example, the distance s1 between the projection of the left side edge of the RF element 30 on the target plane and the hollowed-out area 1111 and the distance s2 between the projection of the right side edge of the RF element 30 on the target plane and the hollowed-out area 1111 can be the same or different. For example, the distances s between the projections of different side edges of the RF element 30 on the target plane and the hollowed-out area 1111 can be adjusted based on the interference strength between the different side edges of the RF element 30 and the corresponding shielding side edges and / or the position of the inductor and / or capacitor in the RF element 30.

[0047] In some embodiments, as Figure 3 and Figure 4As shown, the target metal layer 111 includes a first metal region 1112 and a second metal region 1113. The first metal region 1112 at least partially overlaps with the projection of the RF component 30 on the target plane. The second metal region 1113 is located outside the projection of the RF component 30 on the target plane. A hollow region 1111 is formed between the first metal region 1112 and the second metal region 1113. The first metal region 1112 may include a ground plane below the RF component 30, which can reduce electromagnetic interference between the RF component 30 and other circuits, such as the filter 33, and prevent external electromagnetic interference from affecting the operation of the filter 33. The hollow region 1111 is formed between the first metal region 1112 and the second metal region 1113, so that the distance s between the projection of the RF component 30 on the target plane and the hollow region 1111 is greater than 0, thereby improving the hollow region 1111's ability to isolate interference between the RF component 30 and the shielding structure 20.

[0048] In some embodiments, the shielding structure 20 and the RF component 30 are connected to at least the same metal layer 11 . For example, the shielding structure 20 and the RF component 30 are directly connected to the same metal layer 11 , or the shielding structure 20 and the RF component 30 are indirectly connected to the same metal layer 11 .

[0049] For example, Figure 6 As shown, the metal layer 11 includes a ground layer 112, and the shielding structure 20 and the RF component 30 are both connected to the ground layer 112, that is, the shielding structure 20 and the RF component 30 are connected to the same ground. Figure 6 The RF component 30 is disposed on the metal layer 11 on the top layer of the substrate 10, and the ground layer 112 is the metal layer on the bottom layer of the substrate 10. For example, the shielding sidewall 22 extends from the shielding layer 21 to the substrate 10 and is connected to the ground layer 112 of the substrate 10. This allows the shielding structure 20 to prevent the RF signal of the RF component 30 between the shielding layer 21 and the ground layer 112 from interfering with the circuit outside the shielding structure 20, and also prevents the electromagnetic signal of the circuit outside the shielding structure 20 from interfering with the RF signal of the RF component 30. For example, the RF component 30 can be connected to the ground layer 112 via a metal through-hole 12.

[0050] When the shielding structure 20 and the RF element 30 are connected to at least the same metal layer 11, such as when both the shielding structure 20 and the RF element 30 are connected to the ground layer 112, the shielding structure 20 and the RF element 30 are likely to interfere with each other; the embodiment of the present application can isolate the interference between the shielding structure 20 and the RF element 30 by setting a hollow area 1111.

[0051] In some embodiments, the shielding structure 20 and the RF component 30 are connected to at least the same target metal layer 111. For example, the shielding structure 20 and the RF component 30 are directly connected to at least the same target metal layer 111, or the shielding structure 20 and the RF component 30 are indirectly connected to at least the same target metal layer 111. Exemplarily, the shielding structure 20 is directly or indirectly connected to the target metal layer 111, and the RF component 30 is directly or indirectly connected to the target metal layer 111. By providing a hollowed-out area 1111 in the target metal layer 111 connected to the shielding structure 20 and the RF component 30, interference between the shielding structure 20 and the RF component 30 can be isolated.

[0052] For example, Figure 7 As shown, the metal layer 11 further includes a non-target metal layer 113 , which is the metal layer 11 where the hollowed-out region 1111 is not formed.

[0053] The shielding structure 20 is indirectly connected to the target metal layer 111, which may include: the shielding structure 20 is connected to the target metal layer 111 through the non-target metal layer 113 and the metal through hole 12; Figure 7 As shown, the shielding structure 20 is connected to the non-target metal layer 113 (such as the ground layer 112), and the non-target metal layer 113 is connected to the target metal layer 111 through the metal via 12. The shielding structure 20 is directly connected to the target metal layer 111, which may include: the shielding structure 20 is directly connected to the target metal layer 111 without passing through the non-target metal layer 113. Alternatively, the shielding structure 20 is directly connected to the target metal layer 111 without passing through the non-target metal layer 113.

[0054] The RF element 30 is indirectly connected to the target metal layer 111, which may include: the RF element 30 is connected to the target metal layer 111 through the non-target metal layer 113 and the metal through hole 12; Figure 7 As shown, the RF component 30 is connected to the non-target metal layer 113 (e.g., the metal layer 11 above the target metal layer 111), and the non-target metal layer 113 is connected to the target metal layer 111 through the metal via 12. The RF component 30 is directly connected to the target metal layer 111, which may include: the RF component 30 is directly connected to the target metal layer 111 without passing through the non-target layer.

[0055] Optionally, the non-target metal layer 113 connecting the shielding structure 20 to the target metal layer 111 and the non-target metal layer 113 connecting the RF element 30 to the target metal layer 111 may be the same non-target metal layer 113; or the non-target metal layer 113 connecting the shielding structure 20 to the target metal layer 111 and the non-target metal layer 113 connecting the RF element 30 to the target metal layer 111 may be different non-target metal layers 113; Figure 7As shown, the non-target metal layer 113 connecting the shielding structure 20 with the target metal layer 111 is the ground layer 112 , and the non-target metal layer 113 connecting the RF component 30 with the target metal layer 111 is the metal layer 11 above the target metal layer 111 .

[0056] In some embodiments, the target metal layer 111 is connected to the ground layer 112 in the metal layer 11 via the metal via 12. That is, at least a portion of the metal area of the target metal layer 111 is a grounded metal area. Providing a hollowed-out area 1111 in the grounded target metal layer 111 can reduce the impact of the hollowed-out area 1111 on the layout of other circuits in the RF front module, thereby facilitating layout design.

[0057] Exemplarily, the total area of the metal regions on the target metal layer 111 connected to the ground layer 112 is greater than or equal to one-half of the total area of the target metal layer 111. Preferably, the total area of the metal regions on the target metal layer 111 connected to the ground layer 112 is greater than or equal to two-thirds of the total area of the target metal layer 111. That is, the target metal layer 111 is a metal layer 11 that is largely grounded. In the relatively large grounded metal regions on the target metal layer 111, the position and size of the hollowed-out region 1111 can be flexibly set so that the hollowed-out region 1111 can be located between the projection of the RF component 30 on the target plane and the projection of the shielding sidewall 22 on the target plane.

[0058] In some embodiments, see Figure 4 The metal layer 11 includes a ground layer 112, and the target metal layer 111 includes a first target metal layer 111a. The first target metal layer 111a is connected to the ground layer 112. The RF component 30 is connected to the first target metal layer 111a through a metal through-hole 12. The first target metal layer 111a is a grounded metal layer 11, and the RF component 30 is connected to the grounded metal area on the first target metal layer 111a. Providing a hollowed-out area 1111 in the first target metal layer 111a can improve the isolation effect between the RF component 30 and the shielding sidewall 22, and the hollowed-out area 1111 can more significantly improve the parasitic characteristics of the RF component 30 such as the filter 33 looking at the ground layer 112 of the substrate 10, so that the inductance and / or capacitance values inside the RF component 30 such as the filter 33 change slightly, thereby changing the overall transmission characteristics of the RF component 30 such as the filter 33, thereby improving the performance of the RF front-end module.

[0059] For example, Figure 6As shown, the RF component 30 is disposed on the metal layer 11 on the top layer of the substrate 10, and the ground layer 112 is the metal layer on the bottom layer of the substrate 10. The target metal layer 111 also includes a second target metal layer 111b. The second target metal layer 111b is connected to the ground layer 112, for example, via a through-hole. The second target metal layer 111b is located between the first target metal layer 111a and the ground layer 112. A hollowed-out region 1111 can be provided on at least one metal layer 11 between the first target metal layer 111a and the ground layer 112, thereby configuring the at least one metal layer 11 as the second target metal layer 111b. The hollowed-out region 1111 on the second target metal layer 111b and the first target metal layer 111a can improve the isolation between the RF component 30 and the shielding structure 20, and can significantly improve the parasitic characteristics of the RF component 30, such as the filter 33, when looking toward the ground layer 112 of the substrate 10, thereby improving the performance of the RF front-end module.

[0060] For example, the projection of the hollowed-out region 1111 on the second target metal layer 111b on the first target metal layer 111a at least partially overlaps with the hollowed-out region 1111 on the first target metal layer 111a. Figure 6 As shown, the projection of the hollowed-out region 1111 on the second target metal layer 111b on the first target metal layer 111a completely overlaps with the hollowed-out region 1111 on the first target metal layer 111a. This can improve the isolation between the RF component 30 and the shielding structure 20, and can significantly improve the parasitic characteristics of the RF component 30 and other RF components 30 looking toward the ground layer 112 of the substrate 10, thereby improving the performance of the RF front-end module.

[0061] Optionally, the second target metal layer 111b includes one or more. Figure 1 As shown, the target metal layer 111 close to the shielding layer 21 may be a first target metal layer 111a, and the other target metal layer 111 may be a second target metal layer 111b; or as shown in FIG. Figure 6 As shown, the second target metal layer 111b includes three. Figure 6 As shown, the second target metal layer 111b includes each metal layer 11 located between the first target metal layer 111a and the ground layer 112. This is not limiting; for example, some metal layers 11 located between the first target metal layer 111a and the ground layer 112 may not be provided with the hollowed-out regions 1111. The greater the number of second target metal layers 111b, the better the hollowed-out regions 1111 on each target metal layer 111 provide for isolating the RF component 30 from the shielding structure 20. This can also significantly improve the parasitic characteristics of the RF component 30, such as the filter 33, when looking toward the ground layer 112 of the substrate 10, thereby improving the performance of the RF front-end module.

[0062] In some embodiments, as Figure 6 As shown, the ground layer 112 does not have a hollowed-out area 1111 , so as to prevent the RF signal inside the RF front-end module from leaking through the ground layer 112 .

[0063] In some embodiments, as Figure 1 or Figure 4 As shown, there is at least one metal layer 11 between the target metal layer 111 and the metal layer 11 where the RF element 30 is located, and metal traces are formed on the at least one metal layer 11. The components of the RF front-end module can be connected through the metal traces on the at least one metal layer 11.

[0064] For example, the substrate 10 of the RF front-end module includes six metal layers 11 arranged from the top layer to the bottom layer, wherein the first metal layer 11 and the second metal layer 11 are mainly used to set components and metal traces, the sixth metal layer 11 is a ground layer 112, and the third metal layer 11 to the fifth metal layer 11 are metal layers 11 with a large amount of grounding; a hollow area 1111 can be set on one or more metal layers 11 in the third metal layer 11 to the fifth metal layer 11. Exemplarily, the RF element 30 is connected to the third metal layer 11 through the metal through hole 12, and the hollow area 1111 can be set on the third metal layer 11; optionally, a hollow area 1111 can also be set on the fourth metal layer 11 and / or the fifth metal layer 11.

[0065] In some embodiments, as Figure 5 、 Figure 6 or Figure 8 As shown, the shielding sidewall 22 is connected to the metal layer 11 through a grounding branch, there is a gap between adjacent grounding branches, and the grounding branches are grounded through the metal through-hole 12.

[0066] Please combine Figure 8 See Figure 9 , some grounding gaps are formed between adjacent grounding branches, that is, multiple grounding branches are independently and dispersedly connected to different positions of the shielding side wall 22. The shielding structure 20 is grounded through the grounding branches, which can enhance the electromagnetic shielding effect of the shielding structure 20 and efficiently transmit interference signals generated within the shielding structure 20 to the ground, preventing these interference signals from resonating within the shielding structure 20 and affecting the overall performance of the RF front-end module, thereby improving the out-of-band suppression performance of the RF front-end module.

[0067] For example, Figure 6 As shown, the hollowed-out area 1111 is at least arranged on a side of the projection of the RF component 30 on the target plane close to the ground branch, which can improve the isolation effect of the hollowed-out area 1111 on the RF component 30 and the shielding structure 20 .

[0068] The RF front-end module provided in some embodiments of the present application includes a substrate 10, a shielding structure 20, and a RF element 30; the substrate 10 includes one or more metal layers 11, the shielding structure 20 is connected to the metal layer 11, the shielding structure 20 includes a shielding layer 21 above the substrate 10 and a shielding side wall 22, the shielding side wall 22 extends from the shielding layer 21 toward the substrate 10, and the RF element 30 is arranged on the metal layer 11 of the substrate 10; wherein, the one or more metal layers 11 include a target metal layer 111, a hollow area 1111 is formed on the target metal layer 111, and the hollow area 1111 is located between the projection of the RF element 30 on the target plane and the projection of the shielding side wall 22 on the target plane, and the target plane is the plane where the target metal layer 111 is located. By setting a hollowed-out area 1111 on the target metal layer 111 in an area adjacent to the projection area of the RF element 30, the RF element 30 and the shielding structure 20, especially the RF element 30 and the shielding side wall 22, can be physically isolated to prevent mutual interference between the RF element 30 and the shielding structure 20; and a resonant cavity can be formed between the hollowed-out area 1111 and the shielding structure 20, thereby improving the transmission characteristics of the RF element 30, improving the out-of-band suppression effect of the RF element 30, and further improving the isolation effect; thereby improving the performance of the RF front-end module.

[0069] In some embodiments, as Figure 8 As shown, the RF front-end module includes a substrate 10 , a shielding structure 20 , a RF element 30 and a plurality of ground branches 40 .

[0070] In some embodiments, the shielding structure 20 may be an independent metal shielding structure 20 connected to the substrate 10. In other embodiments, a plastic packaging structure is provided on the substrate 10, and the shielding structure 20 is formed outside the plastic packaging structure. For example, the shielding structure 20 includes a metal coating formed outside the plastic packaging structure.

[0071] The RF component 30 may include discrete devices and chips (integrated circuits), wherein the discrete devices include but are not limited to a transformer 34 , and the chips include but are not limited to at least one of the following: an antenna switch chip 31 , an RF power amplifier chip 32 , and a filter 33 .

[0072] Please combine Figure 8 See Figure 9 The grounding branches 40 connect the metal layer 11 of the substrate and the shielding sidewall 22. The grounding branches 40 are grounded through the metal through-holes 12. There are gaps between adjacent grounding branches 40. Grounding gaps are formed between adjacent grounding branches 40, that is, multiple grounding branches 40 are independently connected to different positions of the shielding sidewall 22.

[0073] The grounding branch 40 can be disposed in a side region of the substrate 10, connected between the metal layer 11 and the shielding sidewall 22. Optionally, the grounding branch 40 can be a strip of metal connected between the metal layer 11 and the shielding sidewall 22, and can be a straight metal, a curved metal, or of course not limited thereto. For example, a zigzag metal can also be used.

[0074] In some embodiments, the grounding branch 40 and the metal via 12 may be directly or indirectly connected. For example, the metal via 12 and the grounding branch 40 may be spaced apart, and the grounding branch 40 may be first connected to the metal via 12 via a metal connection portion (e.g., a metal lead), and the metal via 12 may be grounded, thereby achieving grounding of the grounding branch 40 through the metal via 12.

[0075] For example, the substrate 10 includes a ground layer, and the ground branches 40 connected to different metal layers on the substrate are connected to the ground layer through metal through holes 12 on the corresponding metal layers on the substrate. It is understood that the metal through holes 12 can pass through any metal layer on the substrate to the ground layer.

[0076] For example, a metal layer 11 of the substrate 10 includes a grounding region (e.g., a metal pad) connected to a ground layer. A grounding branch 40 is connected to the grounding region, which is then connected to the ground layer via a metal via 12. For example, a corresponding connection on the first metal layer of the substrate includes a grounding branch, which is connected to a grounding region (e.g., a metal pad) of the first metal layer. The grounding region (e.g., a metal pad) is connected to the ground layer via a metal via 12.

[0077] It should be noted that although the shielding structure 20 can avoid the far-field radiation problem of the RF element 30 itself to a certain extent, the shielding structure 20 will also complicate the grounding environment of the RF front-end module and bring some unnecessary parasitic effects. In particular, some higher frequency bands are very sensitive to parasitic effects. Parasitic effects will cause the harmonics and out-of-band suppression characteristics of the entire RF front-end module to change, thereby affecting the performance of the RF front-end module.

[0078] The shielding structure 20 of the embodiment of the present application is grounded through a grounding branch 40 arranged on the side of the substrate 10. In addition to enhancing the electromagnetic shielding effect of the shielding structure 20, the interference signals generated inside the shielding structure 20 can also be efficiently transmitted to the ground, preventing these interference signals from forming resonance inside the shielding structure 20 and affecting the overall performance of the RF front-end module, thereby improving the out-of-band suppression performance of the RF front-end module; for example, it can prevent the situation where the resonant frequency corresponding to the interference signal is within the operating frequency band of the RF element 30, thereby preventing the various parameters of the RF element 30 from deteriorating, such as preventing the interference signal from affecting the load line of the RF element 30 or introducing high-order harmonics in the RF element 30.

[0079] In some embodiments, as Figure 9 As shown, the grounding metal through-hole 12 connected to the grounding branch 40 is arranged close to the corresponding grounding branch 40, or the metal through-hole 12 is at least partially arranged on the grounding branch 40; thereby, the connection path between the grounding branch 40 and the ground is shorter, and the interference signal can be transmitted to the ground more efficiently, and these interference signals can be prevented from forming resonance inside the shielding structure 20 more efficiently.

[0080] In some embodiments, as Figure 9 As shown, when there is a certain distance between the grounding branch 40 and the metal through-hole 12, the metal layer 11 further includes a metal connecting portion 101, which connects the grounding branch 40 and the metal through-hole 12, that is, the grounding branch 40 is connected to the metal through-hole 12 through the metal connecting portion 101, and the metal through-hole 12 is grounded.

[0081] Optionally, at least one grounding branch 40 is integrally provided with the grounded metal connection portion 101, or the grounding branch 40 is connected to the grounded metal connection portion 101. The grounding branch 40 can be grounded by utilizing the grounded metal connection portion 101 on the metal layer 11 of the substrate 10, for example, the number of metal through holes 12 on the substrate 10 can be reduced.

[0082] In some embodiments, the plurality of ground branches 40 are distributed on both sides of the substrate 10. The two sides may be two adjacent sides of the substrate (for example, the upper side and the left side of the substrate, or the upper side and the right side of the substrate, or the lower side and the right side of the substrate, or the lower side and the left side of the substrate), or two opposite sides of the substrate (for example, the upper side and the lower side of the substrate, or the left side and the right side of the substrate).

[0083] In some embodiments, a plurality of ground branches 40 are distributed on each side of the substrate 10. Figure 9 As shown, the substrate 10 is rectangular, and grounding branches 40 are provided on the four sides of the substrate 10. The interference signal generated inside the shielding structure 20 can be more comprehensively transmitted to the ground.

[0084] In some embodiments, the substrate 10 includes at least a first metal layer and a second metal layer. Figure 12a FIG. 4 is a schematic diagram of a grounding branch 40 on the first metal layer. Figure 12bFIG. 1 shows a schematic diagram of grounding branches 40 on the second metal layer. Grounding branches 40 are provided on at least four sides of the first metal layer. For example, grounding branches 40 may be provided on the left, bottom, top, and right sides of the first metal layer. Of course, this is not limiting. Grounding branches 40 may also be provided on at least three sides of the first metal layer. For example, grounding branches 40 may be provided on the left, bottom, and right sides of the first metal layer, or on the left, bottom, and top sides of the first metal layer.

[0085] It should be noted that the number of grounding branches on each side can be the same or different, and the area of the grounding branches on each side can be the same or different. For example, the number of grounding branches distributed on the left side of the substrate 10 is 3, and the number of grounding branches distributed on the right side of the substrate is 4.

[0086] In some embodiments, the length L and / or width W of the ground branch 40 is related to the operating frequency of the RF component 30; see Figure 9 The length L of the grounding branch 40 extends from the shielding sidewall 22 toward the grounding via, and the width W of the grounding branch 40 is perpendicular to the length L of the grounding branch 40. For example, the length L and / or width W of the grounding branch 40 are related to the operating frequency of the RF component 30 closest to the grounding branch 40. The grounding branch 40 can better transmit the interference signal corresponding to the RF component 30 to the ground, thereby improving the out-of-band suppression performance of the RF signal of the RF component 30.

[0087] By setting the length L and / or width W of the grounding branch 40 according to the operating frequency of the RF element 30, the grounding branch 40 can achieve out-of-band suppression of interference signals (for example, second harmonic signals, third harmonic signals, and fourth harmonic signals) with frequencies greater than the operating frequency of the RF element 30.

[0088] For example, the length L of the ground branch 40 is negatively correlated with the operating frequency of the RF element 30, and / or the width W of the ground branch 40 is negatively correlated with the operating frequency of the RF element 30. For example, the higher the operating frequency of the RF element 30, the smaller the length L and / or width W of the ground branch 40 corresponding to the RF element 30, and the higher the cutoff frequency corresponding to the ground branch 40, that is, the higher the frequency that can be suppressed by the ground branch 40.

[0089] For example, when the operating frequency band of the RF component 30 is within the range of [3.3 GHz, 5 GHz], the length L and / or the width W of the ground branch 40 is within the range of [0.2 mm, 3 mm].

[0090] In at least one embodiment, when the operating frequency band of the RF element 30 is in the range of [3.3 GHz, 5 GHz], the length L and / or width W of the ground branch 40 is in at least one range of [0.2 mm, 1 mm], [1 mm, 2 mm], [1 mm, 3 mm], and [2 mm, 3 mm].

[0091] For example, when the harmonic frequency band of the RF component 30 is in the range of [6.6 GHz, 20 GHz], the length L and / or the width W of the ground branch 40 is in the range of [0.2 mm, 3 mm].

[0092] In at least one embodiment, when the harmonic frequency band of the RF element 30 is in the range of [6.6 GHz, 20 GHz], the length L and / or width W of the ground branch 40 is in at least one range of [0.2 mm, 1 mm], [1 mm, 2 mm], [1 mm, 3 mm], and [2 mm, 3 mm].

[0093] The side elevation of the grounding branch 40 forms a rectangular resonant cavity with the surrounding metal and dielectric. By adjusting the length L and / or width W of the grounding branch 40, the resonant frequency of the resonant cavity can be adjusted so that the resonant frequency of the resonant cavity is outside the operating frequency band of the RF element 30 corresponding to the grounding branch 40, thereby preventing the RF signal of the RF element 30 from forming resonance in the resonant cavity and affecting the overall performance of the RF front-end module, for example, reducing the impact on other components in the RF front-end module.

[0094] In some embodiments, the plurality of grounding branches 40 include a first grounding branch 41 and a second grounding branch 42 distributed on opposite sides of the same metal layer 11 of the substrate 10, wherein the first grounding branch 41 and the second grounding branch 42 are not on the same virtual horizontal line, or the first grounding branch 41 and the second grounding branch 42 are not on the same virtual vertical line. Figure 10a , the first grounding branch 41 on the upper side of the substrate 10 and the second grounding branch 42 on the lower side are not on the same virtual horizontal line, and the first grounding branch 41 on the left side of the substrate 10 and the second grounding branch 42 on the right side are not on the same virtual vertical line. In other words, the grounding branches 40 on at least one virtual vertical line and / or at least one virtual horizontal line are asymmetrically arranged. The asymmetrically arranged grounding branches 40 can better suppress harmonics of even-order resonant frequencies, such as second and fourth harmonics, thereby improving the overall performance of the RF front-end module.

[0095] In some embodiments, the plurality of grounding branches 40 include a first grounding branch 41 and a second grounding branch 42, and the first grounding branch 41 and the second grounding branch 42 are distributed on both sides of the virtual central axis of one of the metal layers 11 of the substrate 10; wherein the projection of the first grounding branch 41 on the virtual central axis and the projection of the second grounding branch 42 on the virtual central axis do not completely overlap; or, the projection of the first grounding branch 41 on the virtual central axis and the projection of the second grounding branch 42 on the virtual central axis do not overlap. Figure 10b The projection of the first grounding branch 41 on the upper side of the substrate 10 on the horizontal virtual center axis and the projection of the second grounding branch 42 on the lower side on the horizontal virtual center axis do not overlap. The projection of the first grounding branch 41 on the left side of the substrate 10 on the vertical virtual center axis and the projection of the second grounding branch 42 on the right side on the vertical virtual center axis do not completely overlap. In other words, the grounding branches 40 on at least one virtual center axis are arranged asymmetrically. The asymmetrically arranged grounding branches 40 can better suppress harmonics of even-order resonant frequencies, such as second and fourth harmonics, thereby improving the overall performance of the RF front-end module.

[0096] In some embodiments, the plurality of grounding branches 40 include a first grounding branch 41 and a second grounding branch 42, and the first grounding branch 41 and the second grounding branch 42 are distributed on the same side of a virtual central axis of one of the metal layers 11 of the substrate 10. Figure 10c As shown, the first grounding branch 41 and the second grounding branch 42 are both distributed on the upper side of the virtual center axis. That is, the first grounding branch 41 and the second grounding branch 42 are asymmetrically arranged on the substrate 10, which can improve the performance of the first grounding branch 41 and the second grounding branch 42 in suppressing harmonics of even resonant frequencies, such as second harmonics or fourth harmonics, thereby improving the overall performance of the RF front-end module. In some embodiments, a grounding branch 40 is provided on at least one preset axis of at least one metal layer 11; the angle between the preset axis and one of the side edges of the substrate 10 is greater than or equal to 160 degrees and less than or equal to 180 degrees. As shown Figure 9 As shown, the first preset axis is parallel to a left side or a right side of the substrate 10 .

[0097] like Figure 9 As shown, a grounding branch 40 is provided at one end of the first predetermined axis, while no grounding branch 40 is provided at the other end of the first predetermined axis. In other words, the asymmetrical arrangement of the grounding branches 40 along the first predetermined axis can improve the ability of the grounding branches 40 to suppress harmonics of even-order resonant frequencies, such as the second harmonic and the fourth harmonic, thereby improving the overall performance of the RF front-end module.

[0098] In some embodiments, two grounding branches 40 are provided on at least one predetermined axis of at least one metal layer 11, and the two grounding branches 40 are asymmetric about the center of the predetermined axis; the angle between the predetermined axis and one side of the substrate 10 is greater than or equal to 160 degrees and less than or equal to 180 degrees; Figure 9 As shown, the second predetermined axis is parallel to the left or right side of the substrate 10, and the third predetermined axis is parallel to the upper or lower side of the substrate 10. That is, the asymmetrical arrangement of the grounding branches 40 on the predetermined axis can improve the performance of the grounding branches 40 in suppressing harmonics of even-order resonant frequencies, such as the second harmonic and the fourth harmonic, thereby improving the overall performance of the RF front-end module.

[0099] For example, the two grounding branches 40 are asymmetric about the center of the preset axis, including: the lengths L of the two grounding branches 40 on the preset axis are different, and / or the widths W of the two grounding branches 40 on the preset axis are different, and / or the areas of the two grounding branches 40 on the preset axis are different (when the grounding branches 40 are linear metal films, the area of the grounding branches 40 is equal to the product of the length L and the width W). Figure 9 As shown, a grounding branch 40 is provided at each end (eg, the first end and the second end) of the second preset axis. The grounding branch 40 at the first end and the grounding branch 40 at the second end of the second preset axis have different lengths L and widths W.

[0100] For example, the two grounding branches 40 are asymmetric about the center of the preset axis, including: the preset axis is parallel to the side of the substrate 10, and the positions of the two grounding branches 40 on the preset axis are asymmetric about the center of the preset axis. Figure 9 As shown, a grounding branch 40 is respectively provided at the first end (e.g., the left end) and the second end (e.g., the right end) of the third preset axis, and the positions of the two grounding branches 40 at the first end (e.g., the left end) and the second end (e.g., the right end) of the third preset axis are asymmetrical about the center of the third preset axis.

[0101] In some embodiments, the metal layer 11 includes a first metal layer and a second metal layer, and the number of RF elements 30 on the first metal layer is greater than the number of RF elements 30 on the second metal layer; wherein the number of grounding branches 40 connected to the first metal layer is greater than the number of grounding branches 40 connected to the second metal layer, and / or the sum of the areas of the grounding branches 40 connected to the first metal layer is greater than the sum of the areas of the grounding branches 40 connected to the second metal layer. The RF signal of the metal layer 11 having a larger number of RF elements 30 is richer and more diverse, and is more likely to form high-frequency harmonics; by providing a larger number and / or a larger area of grounding branches 40 on the first metal layer having a larger number of RF elements 30, the need to suppress the high-frequency harmonics of the first metal layer can be met, thereby ensuring that the RF front-end module has better performance.

[0102] In some embodiments, see Figure 11 , wherein at least one metal layer 11 includes a first region and a second region, and the number of RF elements 30 in the first region is greater than the number of RF elements 30 in the second region; wherein the number of ground branches 40 connected to the first region is greater than the number of ground branches 40 connected to the second region, and / or the sum of the areas of the ground branches 40 connected to the first region is greater than the sum of the areas of the ground branches 40 connected to the second region. The RF signal in the first region with a larger number of RF elements 30 is richer and more diverse, and is more likely to form high-frequency harmonics; by providing a larger number and / or a larger area of ground branches 40 in the first region with a larger number of RF elements 30, the need to suppress high-frequency harmonics in the first region can be met, thereby ensuring that the RF front-end module has better performance.

[0103] In some embodiments, as Figure 12a and Figure 12b As shown, the substrate 10 is provided with an antenna port 13, which is configured to be connected to an antenna. The grounding branch 40 includes a first grounding branch 41, which is disposed proximate to the antenna port 13. Exemplarily, the distance between the first grounding branch 41 and the antenna port 13 is less than or equal to a predetermined distance threshold, which ranges from 50 microns to 500 microns. Preferably, the predetermined distance threshold ranges from 100 microns to 200 microns; further, the predetermined distance threshold ranges from 100 microns to 150 microns.

[0104] The power of the RF signal of the antenna port 13 is relatively large, and a RF signal with a larger power is more likely to form high-frequency harmonics; by setting the first grounding branch 41 close to the antenna port 13, the suppression effect of the first grounding branch 41 on the high-frequency harmonics can be improved, thereby ensuring that the RF front-end module has better performance.

[0105] Figure 12aFIG. 1 is a schematic diagram showing the projection of the RF component 30 on the first metal layer of the substrate 10. Figure 12b FIG. 1 is a schematic diagram showing the projection of the RF component 30 on the second metal layer of the substrate 10 , wherein the first metal layer may be the first metal layer 11 on the top of the substrate 10 .

[0106] In some embodiments, as Figure 12a and Figure 12b As shown, the RF component 30 includes an antenna switch chip 31, which includes an output port 311. The output port 311 is configured to be connected to the antenna port 13 on the substrate 10. The grounding branch 40 includes a second grounding branch 42, which is disposed near the output port 311. Exemplarily, the distance between the second grounding branch 42 and the output port 311 is less than or equal to a preset distance threshold.

[0107] The power of the RF signal at the output port 311 of the antenna switch chip 31 is relatively large, and a RF signal with relatively large power is more likely to form high-frequency harmonics. By setting a second grounding branch 42 close to the output port 311 of the antenna switch chip 31, the suppression effect of the second grounding branch 42 on the high-frequency harmonics can be improved, thereby ensuring that the RF front-end module has better performance.

[0108] Optionally, the antenna port 13 is located close to the output port 311 of the antenna switch chip 31, or as shown in FIG. Figure 12a and Figure 12b As shown, when the antenna switch chip 31 is disposed on the substrate in a flip-flop manner, the output port 311 of the antenna switch chip 31 is directly connected to the antenna port 13 on the substrate 10, and the projection of the output port 311 of the switch chip on the substrate 10 at least partially overlaps with the antenna port 13. When the antenna switch chip 31 is disposed on the substrate using a WB package (Wire Bond Packaging), the output port 311 of the antenna switch chip 31 is connected to the antenna port 13 on the substrate 10 via a metal wire. By arranging the output port 311 on the antenna switch chip 31 adjacent to the antenna port 13 on the substrate 10, the transmission path length L of the RF signal can be reduced, thereby reducing transmission loss and parasitic impedance.

[0109] In some embodiments, as Figure 12a As shown, the RF element 30 includes an RF power amplifier chip 32, and the grounding branch 40 includes a third grounding branch 43. The third grounding branch 43 is arranged near the RF power amplifier chip 32. Exemplarily, the distance between the third grounding branch 43 and the output end of the RF power amplifier chip 32 is less than or equal to a preset distance threshold.

[0110] The power of the RF signal at the output end of the RF power amplifier chip 32 is relatively large, and a RF signal with a larger power is more likely to form high-frequency harmonics; by setting the third grounding branch 43 close to the output end of the RF power amplifier chip 32, the suppression effect of the third grounding branch 43 on the high-frequency harmonics can be improved, thereby ensuring that the RF front-end module has better performance.

[0111] Exemplarily, the RF power amplifier chip 32 is disposed on the first metal layer of the substrate 10, and a third grounding branch 43 may be disposed on the first metal layer. Optionally, if the RF power amplifier chip 32 is not disposed on the second metal layer of the substrate 10, the third grounding branch 43 may not be disposed on the second metal layer, for example, to facilitate the provision of other structures at corresponding locations on the metal layer 11. Alternatively, the third grounding branch 43 may be disposed on the second metal layer to enhance the suppression of high-frequency harmonics.

[0112] In some embodiments, as Figure 12a and Figure 12b As shown, the RF element 30 includes a filter 33 and an antenna switch chip 31, and the filter 33 and the antenna switch chip 31 are arranged near the first side of the substrate 10; the number of ground branches 40 on the first side of the substrate 10 is greater than the number of ground branches 40 on any other side of the substrate 10.

[0113] The RF signals output by the filter 33 and the antenna switch chip 31 have a large power. By setting a plurality of grounding branches 40 on the sides of the substrate 10 close to the filter 33 and the antenna switch chip 31, the suppression effect of these grounding branches 40 on the high-frequency harmonics at the sides of the substrate 10 close to the filter 33 and the antenna switch chip 31 can be improved, thereby ensuring that the RF front-end module has better performance.

[0114] In some embodiments, as Figure 13 As shown, the RF component 30 includes a first RF component 301, which is connected to the substrate 10 and / or other RF components 30 via a bonding wire 321. The grounding branch 40 includes a fourth grounding branch 44, which is disposed near the first RF component 301. Exemplarily, the distance between the fourth grounding branch 44 and the first RF component 301 is less than or equal to a preset distance threshold.

[0115] Illustratively, the first RF component 301 includes a RF power amplifier chip 32 ; at least on the metal layer 11 connected to the RF power amplifier chip 32 , a fourth ground branch 44 corresponding to the RF power amplifier chip 32 is provided.

[0116] Exemplarily, the first RF element 301 is disposed on the substrate 10 using a WB package (Wire Bond Packaging). For example, the top of the first RF element 301 is connected to the substrate 10 and / or the remaining RF elements 30 via a bonding wire 321. The height of the bonding wire 321 plus the height of the first RF element 301 will make the distance between the bonding wire 321 and the shielding layer 21 in the shielding structure 20 closer, making it easier for the power of the RF signal transmitted by the first RF element 301 to be coupled to the shielding structure 20 as an interference signal, and then conducted to the ground layer by the shielding structure 20, thereby deteriorating the performance of the RF front-end module. For example, the first RF element 301 includes an RF power amplifier chip 32. The power of the RF signal transmitted by the RF power amplifier chip 32 is relatively large. If the power of the RF signal transmitted by the RF power amplifier chip 32 is coupled to the shielding structure 20 as an interference signal via the bonding wire 321 and then conducted to the ground layer by the shielding structure 20, the performance of the RF front-end module will be deteriorated. For example: the ground layer connected to the filter 33 in the RF front-end module produces a large parasitic effect, which causes the out-of-band suppression performance of the filter 33 to deteriorate significantly, and further deteriorates the out-of-band suppression capability of the entire RF front-end module (especially the ability to suppress high-order harmonics).

[0117] In the embodiment of the present application, a fourth grounding branch 44 can be provided near the first RF element 301. The fourth grounding branch 44 can efficiently conduct the interference signal at the first RF element 301 and the bonding wire 321 to the ground, thereby preventing the interference signal from affecting the first RF element 301 and deteriorating the performance of the RF front-end module, thereby ensuring that the RF front-end module has better performance.

[0118] In some embodiments, as Figure 12a As shown, the RF component 30 includes a transformer 34, and the grounding branch 40 includes a fifth grounding branch 45, which is disposed close to the transformer 34. Exemplarily, the distance between the fifth grounding branch 45 and at least one transformer 34 is less than or equal to a preset distance threshold.

[0119] For example, the transformer 34 is connected to the output end of the RF power amplifier chip 32 to perform impedance matching on the RF signal at the output end of the RF power amplifier chip 32 .

[0120] Transformer 34 generates a strong magnetic field through a relatively large current. If transformer 34 includes a coil disposed on metal layer 11 of substrate 10, a relatively large current will flow on the coil surface due to the skin effect, generating a stronger magnetic field. The strong magnetic field generated by this current acts as an interference source and can be conducted through shielding structure 20 to the ground layer, degrading the performance of the RF front-end module. In particular, it can have a significant parasitic effect on the ground layer to which filter 33 is connected, significantly degrading the out-of-band suppression characteristics of filter 33 and, in turn, the out-of-band high-harmonic suppression capability of the entire RF front-end module.

[0121] The embodiment of the present application can set a fifth grounding branch 45 near the transformer 34, and the fifth grounding branch 45 can efficiently conduct the interference signal generated by the strong magnetic field to the ground, preventing the interference signal from causing the performance of the RF front-end module to deteriorate, thereby ensuring that the RF front-end module has better performance.

[0122] Exemplarily, the transformer 34 includes a first metal coil 341 and a second metal coil 342 formed on different metal layers 11, such as Figure 12a and Figure 12b As shown, the transformer 34 (taking the transformer 34 on the right side of the substrate 10 as an example) includes a first metal coil 341 formed on the first metal layer and a second metal coil 342 formed on the second metal layer. The inductance of the first metal coil 341 is greater than the inductance of the second metal coil 342. The fifth grounding branch 45 is provided at least on the metal layer 11 where the first metal coil 341 is located. Optionally, the fifth grounding branch 45 may or may not be provided on the metal layer 11 where the second metal coil 342 is located.

[0123] For example, Figure 12a and Figure 12b As shown, RF component 30 includes filter 33; transformer 34 corresponding to fifth grounding branch 45 is located near filter 33. The inductor integrated within filter 33 couples not only with shielding layer 21 of shielding structure 20, but also with transformer 34. The interference signals generated by this coupling are conducted through shielding structure 20 to the ground layer, causing performance degradation of the RF front-end module. By providing fifth grounding branch 45 at least near transformer 34 near filter 33, the performance of the RF front-end module can be significantly improved.

[0124] In some embodiments, as Figure 12bAs shown, the RF element 30 includes a low noise amplifier 35, and the grounding branch 40 includes a sixth grounding branch 46, and the sixth grounding branch 46 is arranged near the low noise amplifier 35. Exemplarily, the distance between the sixth grounding branch 46 and the low noise amplifier 35 is less than or equal to a preset distance threshold, and the range of the preset distance threshold includes 50 microns to 500 microns. Preferably, the range of the preset distance threshold includes 100 microns to 200 microns / mm; further, the range of the preset distance threshold includes 100 microns to 150 microns. The power of the RF signal input by the low noise amplifier 35 is relatively low, and the interference signal will have a more significant impact on the low noise amplifier 35. Setting the sixth grounding branch 46 close to the low noise amplifier 35 can efficiently transmit the interference signal to the ground, thereby preventing the interference signal from having an adverse effect on the low noise amplifier 35. Exemplarily, as Figure 12a and Figure 12b As shown, the low noise amplifier 35 is disposed on the first metal layer of the substrate 10 , and the sixth ground branch 46 can be disposed on the second metal layer so that the input line of the low noise amplifier 35 is disposed on the first metal layer.

[0125] In some embodiments, as Figure 12a and Figure 12b As shown, the RF front-end module further includes a controller 36, which is disposed on the substrate 10 and connected to at least one RF component 30. The controller 36 is configured to output a control signal to the at least one RF component 30. The grounding branch 40 includes a seventh grounding branch 47, which is disposed proximate to the controller 36. Exemplarily, the distance between the seventh grounding branch 47 and the controller 36 is less than or equal to a preset distance threshold.

[0126] Exemplarily, the controller 36 is connected to the RF power amplifier chip 32 and the antenna switch chip 31, and the controller 36 outputs control signals to the RF power amplifier chip 32 and the antenna switch chip 31, respectively, to control the working state of the power amplifier circuit in the RF power amplifier chip 32 and the working state of the switch unit in the antenna switch chip 31, respectively. The input signal (such as SCLCK signal, SDATA signal, etc.) received by the signal input end of the controller 36 will interfere with other RF components 30 and RF lines. Therefore, this embodiment sets a seventh grounding branch in an area close to the controller, and the distance between the seventh grounding branch 47 and the controller 36 is less than or equal to the preset distance threshold, thereby preventing the controller from interfering with other RF components 30 and RF lines.

[0127] In some embodiments, the substrate 10 includes a plurality of metal layers 11 and a dielectric layer between adjacent metal layers 11; the dielectric constant of the dielectric layer is less than or equal to a preset constant, for example, the preset constant is in the range of [2, 4]. The capacitance effect of a substrate 10 with a lower dielectric constant is weaker, and the electric field lines inside the substrate 10 are more dispersed, making it easy to radiate and leak electromagnetic interference to the surroundings. For an RF front-end module using a substrate 10 with a lower dielectric constant, the embodiments of the present application can more significantly improve the performance of the RF front-end module through the ground branch 40.

[0128] In some embodiments, the number of metal layers 11 on the substrate 10 is greater than or equal to 4. A substrate 10 with more metal layers 11 has more coupling paths, making electromagnetic coupling more likely, which in turn complicates the grounding environment and increases the difficulty of electromagnetic shielding. For RF front-end modules with a large number of metal layers 11 on the substrate 10, the embodiments of the present application can significantly improve the performance of the RF front-end module through the grounding branches 40.

[0129] The RF front-end module provided in some embodiments of the present application includes a substrate 10, a shielding structure 20, a RF element 30, and a plurality of grounding branches 40; the substrate 10 includes one or more metal layers 11; the shielding structure 20 includes a shielding layer 21 and a shielding sidewall 22 arranged above the substrate 10, and the shielding sidewall 22 extends from the shielding layer 21 toward the substrate 10; the RF element 30 is arranged on the substrate 10 and connected to the metal layer 11; and at least one RF element 30 is arranged within the projection of the shielding structure 20 on the substrate 10; the grounding branches 40 connect the metal layer 11 and the shielding sidewall 22, and the grounding branches 40 are grounded through metal through-holes 12, with gaps between adjacent grounding branches 40. The shielding structure 20 is grounded through the grounding branches 40 arranged on the side of the substrate 10, which can enhance the electromagnetic shielding effect of the shielding structure 20, and can also efficiently transmit the interference signals generated inside the shielding structure 20 to the ground, preventing these interference signals from forming resonance inside the shielding structure 20 and affecting the overall performance of the RF front-end module, thereby improving the out-of-band suppression performance of the RF front-end module. Please refer to Figure 14 Compared with the RF front-end module without the ground branch 40, the RF front-end module with the ground branch 40 has better out-of-band suppression performance.

[0130] Please refer to the above examples. Figure 15 ,like Figure 15 FIG2 is a schematic block diagram of an electronic device provided in an embodiment of the present application. The electronic device includes the aforementioned radio frequency front-end module.

[0131] The electronic device may be a communication device such as a mobile phone, a tablet computer, a vehicle-mounted terminal, or other communication device with communication functions. The embodiments of the present application do not limit the specific type of electronic device.

[0132] The specific principles and implementation methods of the electronic device provided in the embodiment of the present application are similar to those of the RF front-end module of the aforementioned embodiment and will not be repeated here.

[0133] It should be understood that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the present application.

[0134] It should be understood that when an element or layer is referred to as being "on," "adjacent to," "connected to," or "coupled to" another element or layer, it may be directly on, adjacent to, connected to, or coupled to the other element or layer, or there may be intervening elements or layers. Conversely, when an element is referred to as being "directly on," "directly adjacent to," "directly connected to," or "directly coupled to" another element or layer, there may be no intervening elements or layers. It should be understood that although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers, and / or parts, these elements, components, regions, layers, and / or parts should not be limited by these terms. These terms are merely used to distinguish one element, component, region, layer, or part from another element, component, region, layer, or part. Therefore, without departing from the teachings of the present application, the first element, component, region, layer, or part discussed below may be represented as a second element, component, region, layer, or part.

[0135] Spatially relative terms such as "under," "beneath," "below," "under," "above," "above," etc., may be used herein for convenience of description to describe the relationship of one element or feature shown in the figures to other elements or features. It should be understood that the spatially relative terms are intended to include different orientations of the device in use and operation in addition to the orientations shown in the figures. For example, if the device in the drawings is flipped, then the elements or features described as "under" or "beneath" or "beneath" the other elements will be oriented as "over" the other elements or features. Thus, the exemplary terms "under" and "under" may include both the upper and lower orientations. The device may be oriented otherwise (rotated 90 degrees or in other orientations) and the spatial descriptors used herein are interpreted accordingly.

[0136] The purpose of the terms used herein is only to describe specific embodiments and is not intended to limit the present application. When used herein, the singular forms "a", "an", and "the" are intended to include the plural forms, unless the context clearly indicates otherwise. It should also be understood that the terms "comprising" and / or "including", when used in this specification, determine the presence of the features, integers, steps, operations, elements and / or parts, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, parts and / or groups. When used herein, the term "and / or" includes any and all combinations of the relevant listed items.

[0137] The above description is merely a specific embodiment of the present application, but the scope of protection of the present application is not limited thereto. Any person skilled in the art can easily conceive of various equivalent modifications or substitutions within the technical scope disclosed in the present application, and such modifications or substitutions should be included in the scope of protection of the present application. Therefore, the scope of protection of the present application should be based on the scope of protection of the claims.

Claims

1. A radio frequency front-end module, characterized in that: The radio frequency front-end module includes: a substrate comprising one or more metal layers; a shielding structure connected to the metal layer, the shielding structure comprising a shielding layer above the substrate and a shielding sidewall, the shielding sidewall extending from the shielding layer toward the substrate; A radio frequency component is provided on the metal layer of the substrate; The one or more metal layers include a target metal layer, a hollowed-out area is formed on the target metal layer, and the hollowed-out area is located between the projection of the RF element on the target plane and the projection of the shielding side wall on the target plane, and the target plane is the plane where the target metal layer is located.

2. The RF front-end module according to claim 1, wherein: The target metal layer includes a first metal area and a second metal area, the first metal area at least partially overlaps with the projection of the RF component on the target plane, the second metal area is located outside the projection of the RF component on the target plane, and the hollow area is formed between the first metal area and the second metal area.

3. The RF front-end module according to claim 1, wherein: The shielding structure and the radio frequency component are connected to at least the same metal layer.

4. The RF front-end module according to claim 3, wherein: The metal layer includes a ground layer, and the shielding structure and the radio frequency element are both connected to the ground layer.

5. The RF front-end module according to claim 3, wherein: The shielding structure and the radio frequency component are connected to at least the same target metal layer.

6. The RF front-end module according to claim 5, wherein: The metal layer further includes a non-target metal layer, the non-target metal layer being a metal layer without forming the hollowed-out area; the shielding structure is connected to the non-target metal layer, and the non-target metal layer is connected to the target metal layer through a metal through-hole; or the shielding structure is directly connected to the target metal layer without passing through the non-target metal layer; The RF element is connected to the non-target metal layer, and the non-target metal layer is connected to the target metal layer; or the RF element is directly connected to the target metal layer without passing through the non-target layer.

7. The RF front-end module according to claim 1, wherein: The RF component includes one or more side edges, and the hollow area is provided between a projection of one or more side edges of the RF component on the target plane and a projection of the shielding side wall on the target plane.

8. The RF front-end module according to claim 1, wherein: The hollow area is arranged around the outer side of the projection of the radio frequency component on the target plane.

9. The RF front-end module according to any one of claims 1 to 8, wherein: The shielding sidewall is connected to the metal layer through a grounding branch, there is a gap between adjacent grounding branches, and the grounding branches are grounded through a metal through-hole.

10. The RF front-end module according to claim 9, wherein: The hollowed-out area is at least arranged on a side of a projection of the radio frequency component on the target plane close to the ground branch.

11. The radio frequency front-end module according to any one of claims 1 to 8, wherein: The metal layer includes a ground layer, the target metal layer includes a first target metal layer, and the first target metal layer is connected to the ground layer; The radio frequency component is connected to the first target metal layer through a metal through-hole.

12. The RF front-end module according to claim 11, wherein: The radio frequency component is arranged on the metal layer of the top layer of the substrate, and the ground layer is the metal layer of the bottom layer of the substrate; The target metal layer further includes a second target metal layer, the second target metal layer is connected to the ground layer, and the second target metal layer is located between the first target metal layer and the ground layer.

13. The RF front-end module according to claim 12, wherein: The second target metal layer includes one or more layers.

14. The RF front-end module according to claim 11, wherein: The ground layer is not formed with the hollowed-out area.

15. The radio frequency front-end module according to any one of claims 1 to 8, characterized in that: The target metal layer is connected to a ground layer in the metal layer through a metal through-hole.

16. The radio frequency front-end module according to claim 15, characterized in that: The total area of the metal regions on the target metal layer connected to the ground layer is greater than or equal to half of the total area of the target metal layer.

17. The radio frequency front-end module according to claim 15, wherein: The total area of the metal region where the target metal layer is connected to the ground layer is greater than or equal to two-thirds of the total area of the target metal layer.

18. The radio frequency front-end module according to any one of claims 1 to 8, characterized in that: There is at least one metal layer between the target metal layer and the metal layer where the radio frequency component is located, and a metal trace is formed on the at least one metal layer.

19. The radio frequency front-end module according to any one of claims 1 to 8, characterized in that: The width of the hollowed-out area is greater than or equal to 30 micrometers, and / or the width of the hollowed-out area is less than or equal to 50 micrometers.

20. The radio frequency front-end module according to any one of claims 1 to 8, characterized in that: A distance between a projection of the radio frequency component on the target plane and the hollowed-out area is less than or equal to 100 micrometers.

21. The radio frequency front-end module according to claim 20, characterized in that: The distance between the projection of the radio frequency component on the target plane and the hollowed-out area is less than or equal to 30 micrometers.

22. The radio frequency front-end module according to any one of claims 1 to 8, characterized in that: The radio frequency component includes a filter.

23. The radio frequency front-end module according to claim 22, wherein: The filter includes at least one of the following: an integrated passive device filter, an LC filter, a surface acoustic wave filter, a bulk acoustic wave filter, and a ceramic filter.

24. The radio frequency front-end module according to claim 9, wherein: The metal through-hole for grounding the grounding branch is arranged close to the corresponding grounding branch, or the metal through-hole is at least partially arranged on the grounding branch.

25. The radio frequency front-end module according to claim 24, characterized in that: The metal layer further includes a metal connection portion, the grounding branch is connected to the metal through-hole via the metal connection portion, and the metal through-hole is grounded.

26. The radio frequency front-end module according to claim 25, characterized in that: At least one of the grounding branches is integrally provided with the metal connection portion, or the grounding branch is connected to the metal connection portion.

27. An electronic device, characterized in that: The electronic device includes the radio frequency front-end module according to any one of claims 1 to 26.

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