Transduction device

Abstract

The invention provides a transduction device. The transduction device comprises a substrate; the plurality of transduction assemblies are arranged on the substrate, and each transduction assembly comprises a lower electrode, a lower electrode and an upper electrode; the oscillation assembly is arranged on the lower electrode and provided with an opening, and a cavity is formed between the lower electrode and the oscillation assembly; the upper electrode is arranged on the oscillation component, and the upper electrode and the lower electrode are overlapped in the overlooking direction; and the passivation layer is arranged on the oscillation assembly and the upper electrode and is arranged in the open hole of the oscillation assembly, and the passivation layer continuously extends from a position on the oscillation assembly to a position on the lower electrode through the open hole and the cavity.

Description

Technical Field

[0001] The present invention relates to a transducer device, in particular to a transducer device with an oscillating component. Background Art

[0002] Transducer devices, such as ultrasonic transducers, can measure the distance of objects by emitting and receiving ultrasonic waves. They are now widely used in drones, medical imaging, fingerprint recognition, ultrasonic microscopy and other fields.

[0003] However, the transducer devices on the market still have shortcomings such as complicated preparation process and poor device reliability.

[0004] Therefore, there is an urgent need to provide an improved transducer device in order to improve the previous defects. Summary of the Invention

[0005] The present invention provides a transducer device, comprising: a substrate; and a plurality of transducer components, arranged on the substrate, and each transducer component comprises: a lower electrode; an oscillation component, arranged on the lower electrode and having an opening, wherein a cavity is provided between the lower electrode and the oscillation component; an upper electrode, arranged on the oscillation component, wherein the upper electrode overlaps with the lower electrode in a top-view direction; and a passivation layer, arranged on the oscillation component and the upper electrode, and arranged in the opening of the oscillation component, wherein the passivation layer continuously extends from a position on the oscillation component to a position on the lower electrode through the opening and the cavity.

[0006] The present invention also provides a transducer device, comprising: a substrate; and a plurality of transducer components, arranged on the substrate, and each transducer component comprises: a lower electrode; an oscillation component, arranged on the lower electrode and having an opening, wherein a cavity is provided between the lower electrode and the oscillation component; an upper electrode, arranged on the oscillation component, wherein in a top view direction, the upper electrode overlaps with the lower electrode; a sealing layer, arranged on the oscillation component and covering the opening; and a passivation layer, arranged on the sealing layer, the oscillation component and the upper electrode. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] Figure 1A is a schematic diagram of a transducer device according to an embodiment of the present invention;

[0008] Figure 1B is a schematic top view of a transducer assembly according to an embodiment of the present invention;

[0009] Figure 1C for Figure 1B A schematic cross-sectional view of line segment A-A';

[0010] Figure 2 is a cross-sectional schematic diagram of a transducer assembly according to an embodiment of the present invention;

[0011] Figure 3 is a cross-sectional schematic diagram of a transducer assembly according to an embodiment of the present invention;

[0012] Figure 4 is a cross-sectional schematic diagram of a transducer assembly according to an embodiment of the present invention;

[0013] Figure 5 is a cross-sectional schematic diagram of a transducer assembly according to an embodiment of the present invention;

[0014] Figure 6A is a schematic diagram of a transducer device according to an embodiment of the present invention;

[0015] Figure 6B for Figure 6A Schematic diagram of the equivalent circuit of the energy conversion device;

[0016] Figure 6C for Figure 6A A cross-sectional schematic diagram of a transducer device;

[0017] Figure 7A is a schematic diagram of a transducer device according to an embodiment of the present invention;

[0018] Figure 7B for Figure 7A Schematic diagram of the equivalent circuit of the energy conversion device;

[0019] Figure 7C for Figure 7A Schematic cross-sectional view of the transducer device.

[0020] Description of reference numerals:

[0021] 100 substrates

[0022] 1 Transducer assembly

[0023] 11. Lower electrode

[0024] 12 Oscillation components

[0025] 13 Upper electrode

[0026] 131 strip electrodes

[0027] 14 Passivation layer

[0028] 14A Part 1

[0029] 14B Part 2

[0030] 15 Insulation layer

[0031] 16 Sealing layer

[0032] 17 Another insulation layer

[0033] 17A Part 1

[0034] 17B Part 2

[0035] 2 Circuit Layer

[0036] 21 Active Layer

[0037] 211 First Active Component

[0038] 212 Second active component

[0039] 22 Gate insulation layer

[0040] 23 Gate layer

[0041] 231 First Gate

[0042] 232 Second Gate

[0043] 24 Insulation layer

[0044] 25 electrode layer

[0045] 251 First Electrode

[0046] 252 second electrode

[0047] 253 Third Electrode

[0048] 26 buffer layer

[0049] 27 Flat Layer

[0050] C cavity

[0051] D1 first drive circuit

[0052] D2 Second drive circuit

[0053] DL drive line

[0054] E Electronic components

[0055] e1, e3 control terminal

[0056] e2, e4 first end

[0057] H1 opening

[0058] H2 Another opening

[0059] M Multitasking

[0060] P1 first pad

[0061] P2 second pad

[0062] PL power cord

[0063] RL Read Line

[0064] SL1 first scan line

[0065] SL2 second scan line

[0066] TFT1 first thin film transistor

[0067] TFT2 Second thin film transistor

[0068] T1, T2, T3, T4 thickness

[0069] X, Y direction

[0070] Z Downward direction DETAILED DESCRIPTION

[0071] The following describes the embodiments of the present invention through specific embodiments. Those skilled in the art will readily understand the other advantages and benefits of the present invention from the disclosure herein. The present invention may also be implemented or applied through other different embodiments, and the details in this specification may be modified and altered to accommodate different viewpoints and applications without departing from the spirit of the present invention.

[0072] It should be noted that, in this document, unless otherwise specified, "having a component" is not limited to having a single component, but may include one or more components. In addition, the use of ordinal numbers such as "first" and "second" in the specification and claims to modify claim components does not, by itself, imply or represent any previous ordinal number of the claim components, nor does it represent the order of a component in one claim with respect to another claim, or the order in terms of manufacturing methods. The use of such ordinal numbers is merely to clearly distinguish a component in one claim with a certain name from a component in another claim with the same name.

[0073] Throughout the present specification and the appended claims, certain words will be used to refer to specific components. It will be understood by those skilled in the art that electronic equipment manufacturers may refer to the same components by different names. This document does not intend to distinguish between components that have the same function but different names. In the following specification and claims, words such as "comprises", "contains", and "has" are open-ended words and should be interpreted as meaning "including but not limited to..." Therefore, when the terms "comprises", "contains" and / or "has" are used in the description of the present invention, they specify the existence of corresponding features, areas, steps, operations and / or components, but do not exclude the existence of one or more corresponding features, areas, steps, operations and / or components.

[0074] In this document, the terms "about," "approximately," "substantially," and "roughly" generally mean within 10%, within 5%, within 3%, within 2%, within 1%, or within 0.5% of a given value or range. The quantities given here are approximate quantities, that is, in the absence of specific instructions for "about," "approximately," "substantially," or "roughly," the meanings of "about," "approximately," "substantially," and "roughly" may still be implied. In addition, the terms "range from a first value to a second value" and "range between a first value and a second value" mean that the range includes the first value, the second value, and other values therebetween.

[0075] Unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It is understood that these terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with the background or context of the relevant art and the present invention and should not be interpreted in an idealized or overly formal manner unless specifically defined herein.

[0076] In addition, relative terms may be used in the embodiments, such as "below" or "bottom" and "above" or "top" to describe the relative relationship of one component of the drawings to another component. It is understood that if the device in the drawings is turned upside down, the component described on the "below" side will become the component on the "above" side. When a corresponding component (such as a film layer or area) is referred to as "on another component", it can be directly on the other component, or there can be other components between the two. On the other hand, when a component is referred to as "directly on another component", there is no component between the two. In addition, when a component is referred to as "on another component", the two have a top-down relationship in the top-down direction, and this component can be above or below the other component, and this top-down relationship depends on the orientation of the device.

[0077] In the present invention, any two values or directions used for comparison may have a certain degree of error. If a first value is equal to a second value, it implies that there may be an error of approximately 10% between the first and second values. If a first direction is perpendicular to a second direction, the angle between the first and second directions may be between 80 and 100 degrees. If a first direction is parallel to a second direction, the angle between the first and second directions may be between 0 and 10 degrees.

[0078] It should be noted that the technical solutions provided in the following different embodiments can be replaced, combined or mixed with each other to form another embodiment without violating the spirit of the present invention.

[0079] Figure 1AFIG. 1 is a schematic diagram of a transducer device according to an embodiment of the present invention. Figure 1B FIG. 1 is a schematic top view of a transducer assembly according to an embodiment of the present invention. Figure 1C for Figure 1B Schematic diagram of the cross section of the line segment A-A'. For the convenience of explanation, Figure 1B Some components are omitted.

[0080] In one embodiment of the present invention, Figure 1A As shown, the transducer device may include: a substrate 100; and a plurality of transducer components 1 disposed on the substrate 100. The plurality of transducer components 1 may be arranged along a direction (e.g., the X direction) on the substrate 100 to form a one-dimensional (1D) transducer device. In the present invention, the transducer device may include, for example, 64, 128, or more transducer components 1, but the present invention is not limited thereto.

[0081] In one embodiment of the present invention, Figure 1B and Figure 1C As shown, each transducer component 1 may include: a lower electrode 11; an oscillation component 12, which is arranged on the lower electrode 11 and has an opening H1, wherein a cavity C is provided between the lower electrode 11 and the oscillation component 12; an upper electrode 13, which is arranged on the oscillation component 12, wherein in the top-view direction Z, the upper electrode 13 overlaps with the lower electrode 11; and a passivation layer 14, which is arranged on the oscillation component 12 and the upper electrode 13, and is arranged in the opening H1 of the oscillation component 12, wherein the passivation layer 14 extends continuously from a position on the oscillation component 12 to a position on the lower electrode 11 through the opening H1 and the cavity C. In more detail, the passivation layer 14 may cover the oscillating component 12 and the upper electrode 13, thereby improving the reliability of the transducer component 1. In addition, the opening H1 of the oscillating component 12 may be connected to the cavity C, and the passivation layer 14 may fill the opening H1 of the oscillating component 12 and extend from the opening H1 into the cavity C. Part of the passivation layer 14 (for example, the passivation layer 14 disposed in the opening H1) may contact the lower electrode 11, so that the cavity C forms a closed structure. In one embodiment of the present invention, the passivation layer 14 is continuously disposed on the oscillating component 12 and the upper electrode 13, as well as in the opening H1 of the oscillating component 12.

[0082] In one embodiment of the present invention, Figure 1B As shown, the lower electrode 11 can be a full-surface electrode disposed on the substrate 100. The upper electrode 13 can be a patterned electrode. For example, the upper electrode 13 can include a plurality of strip electrodes 131. The plurality of strip electrodes 131 can be arranged, for example, along the X direction. Each strip electrode 131 can extend, for example, along the Y direction and be electrically connected to each other, but the present invention is not limited thereto.

[0083] In one embodiment of the present invention, Figure 1BAs shown, each transducer component 1 may further include a first pad P1 and a second pad P2, wherein the first pad P1 is electrically connected to the lower electrode 11, and the second pad P2 is connected to the upper electrode 13. Furthermore, the first pad P1 and the second pad P2 may be electrically connected to an external signal source (not shown), respectively. By controlling the voltages of the upper electrode 13 and the lower electrode 11 through the external signal source, the oscillating component 12 may vibrate between the cavities C, thereby emitting ultrasonic waves. Therefore, in one embodiment of the present invention, the transducer device may be an ultrasonic transducer device.

[0084] In one embodiment of the present invention, a conductor layer can be formed on a substrate using a suitable method, and the conductor layer can be patterned by a photolithography process to form a lower electrode 11. Next, a sacrificial layer (not shown) is formed on the lower electrode 11 using a suitable method; and an oscillating component 12 is formed on the sacrificial layer (not shown) using a suitable method, wherein the oscillating component 12 has an opening H1. Thereafter, another conductor layer is formed on the oscillating component 12 using a suitable method, and the other conductor layer is patterned by a photolithography process to form an upper electrode 13. Then, the sacrificial layer (not shown) is removed to provide a cavity C between the lower electrode 11 and the oscillating component 12. Subsequently, a passivation layer 14 is formed on the oscillating component 12 and the upper electrode 13, as well as in the opening H1 using a suitable method. Thereafter, another conductor layer is formed on the passivation layer 14 using a suitable method, and the other conductor layer is patterned by a photolithography process to form a first pad P1 and a second pad P2, thereby forming a structure as shown in FIG. Figure 1C The transducer component 1 shown. Among them, suitable methods may include electroplating, chemical plating, chemical vapor deposition, physical vapor deposition, sputtering, coating or a combination of the foregoing, but the present invention is not limited thereto. The "coating method" may be, for example, a dip coating method, a spin coating method, a roller coating method, a doctor blade coating method, a spray coating method or a combination of the foregoing, but the present invention is not limited thereto. In the present invention, the method for forming the opening H1 of the oscillation component 12 may be, for example, mechanical perforation, laser perforation, yellow light process or a combination thereof, but the present invention is not limited thereto. In the present invention, the method for removing the sacrificial layer may be, for example, wet etching or dry etching, but the present invention is not limited thereto. Through the above method, the present invention can achieve the effect of simplifying the preparation process of the transducer device.

[0085] In the present invention, the material of the substrate 100 may be glass, quartz, sapphire, ceramic, plastic, polycarbonate (PC), polyimide (PI), polypropylene (PP), polyethylene terephthalate (PET), polymethylmethacrylate (PMMA), other suitable materials or combinations thereof, but the present invention is not limited thereto. In the present invention, the upper electrode 13 and the lower electrode 11 may be made of the same or different materials, and the materials of the upper electrode 13 and the lower electrode 11 may each include gold, silver, copper, aluminum, titanium, chromium, nickel, molybdenum, tungsten, indium tin oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide (ITZO), indium gallium zinc oxide (IGZO) or combinations thereof, but the present invention is not limited thereto. In the present invention, the material of the sacrificial layer may include an organic material or an inorganic material, suitable materials such as molybdenum, aluminum, copper, amorphous silicon or polyimide (PI), but the present invention is not limited thereto. When a metal material is used as a sacrificial layer, for example, a wet etching process can be used to remove the sacrificial layer; when a non-metallic material is used as a sacrificial layer, for example, a dry etching process can be used to remove the sacrificial layer, but the present invention is not limited to this. In the present invention, the thickness of the sacrificial layer (equivalent to the thickness T1 of the cavity C) can be 0.1μm to 10μm (i.e., 0.1μm≦T1≦10μm), for example, 0.1μm to 5μm, 0.2μm to 3μm, 0.2μm to 1μm or 0.5μm to 1μm, but the present invention is not limited to this. Here, the "thickness of the cavity" can refer to, for example, the distance between the lower surface of the oscillation component 12 and the upper surface of the lower electrode 11.

[0086] In the present invention, the material of the oscillation component 12 may include amorphous silicon, silicon nitride, silicon oxide, silicon oxynitride or an organic compound (such as polyimide (PI), acrylic), but the present invention is not limited thereto. In addition, the oscillation component 12 may be a thin film composed of a single layer of material or a multilayer of material. In the present invention, the thickness T2 of the oscillation component 12 may be 0.1μm to 3μm (i.e., 0.1μm≦T2≦3μm), for example, 0.1μm to 2μm, 0.1μm to 1μm, 0.2μm to 0.5μm or 0.5μm to 2μm, but the present invention is not limited thereto. Here, the "thickness of the oscillation component" may refer to, for example, the distance between the upper surface of the oscillation component 12 and the lower surface of the oscillation component 12. In the present invention, the material of the passivation layer 14 may include silicon nitride, silicon oxide, silicon oxynitride or a combination thereof, but the present invention is not limited thereto. In the present invention, the thickness T3 of the passivation layer 14 may be 0.1 μm to 3 μm (i.e., 0.1 μm≦T3≦3 μm), for example, 0.1 μm to 2 μm, 0.1 μm to 1 μm, or 0.2 μm to 1 μm. Here, the "thickness of the passivation layer" may refer to, for example, the distance between the upper surface of the passivation layer 14 and the upper surface of the upper electrode 13; or may refer to the distance between the upper surface of the passivation layer 14 and the upper surface of the oscillation component 12. In the present invention, the first pad P1 and the second pad P2 may be prepared using the same or different materials, and the materials of the first pad P1 and the second pad P2 may each include gold, silver, copper, aluminum, titanium, chromium, nickel, molybdenum, tungsten, indium tin oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide (ITZO), indium gallium zinc oxide (IGZO), or a combination thereof, but the present invention is not limited thereto.

[0087] Figure 2 FIG. 1 is a cross-sectional diagram of a transducer assembly according to an embodiment of the present invention. Figure 2 The transducer components and Figure 1C Similar, except for the following differences.

[0088] In one embodiment of the present invention, after forming the passivation layer 14 on the oscillating component 12 and the upper electrode 13, the process may further include patterning the passivation layer 14 to form a Figure 2 The transducer assembly 1 shown. In more detail, as Figure 2 As shown, the passivation layer 14 may include a first portion 14A and a second portion 14B, wherein the first portion 14A and the second portion 14B are separated from each other. In the top view direction Z of the transducer component 1, the first portion 14A overlaps with the upper electrode 13, and the second portion 14B covers the opening H1. When the thickness of the passivation layer 14 is too large, the vibration effect of the oscillating component 12 may be affected. By designing the passivation layer 14 to include the first portion 14A and the second portion 14B separated from each other, the vibration effect of the oscillating component 12 can be improved.

[0089] In one embodiment of the present invention, the first portion 14A of the passivation layer 14 may cover the upper electrode 13, thereby improving the reliability of the transducer component 1. In one embodiment of the present invention, the projection of the first portion 14A of the passivation layer 14 on the substrate 100 may be larger than the projection of the upper electrode 13 on the substrate 100. In one embodiment of the present invention, the second portion 14B of the passivation layer 14 may fill the opening H1 of the oscillating component 12 and extend from the opening H1 into the cavity C, so that the cavity C forms a closed structure. In one embodiment of the present invention, in order to achieve the purpose of patterning the passivation layer 14, the materials of the oscillating component 12 and the passivation layer 14 are different. For example, the material of the oscillating component 12 may include amorphous silicon, and the material of the passivation layer 14 may include silicon nitride, but the present invention is not limited thereto.

[0090] In the present invention, other details of the transducer assembly 1 are as described above and are not repeated here. Furthermore, the materials and processes for components such as the substrate 100, the lower electrode 11, the oscillating assembly 12, the upper electrode 13, the passivation layer 14, the first pad P1, and the second pad P2 can also be referred to in the above description and are not repeated here.

[0091] Figure 3 FIG. 1 is a cross-sectional diagram of a transducer assembly according to an embodiment of the present invention. Figure 3 The transducer components and Figure 2 Similar, except for the following differences.

[0092] In one embodiment of the present invention, after the step of forming the lower electrode 11 and / or before the step of forming the sacrificial layer on the lower electrode 11, a step of forming an insulating layer 15 on the lower electrode 11 using a suitable method may be further included to form the following: Figure 3 The transducer assembly 1 shown. In more detail, as Figure 3 As shown, the transducer component 1 may further include an insulating layer 15 disposed between the upper electrode 13 and the lower electrode 11. When the oscillating component 12 is made of amorphous silicon and contacts the lower electrode 11 due to vibration, a short circuit may occur between the upper electrode 13 and the lower electrode 11. The insulating layer 15 disposed between the upper electrode 13 and the lower electrode 11 can prevent the short circuit from occurring.

[0093] In one embodiment of the present invention, Figure 3As shown, the insulating layer 15 can be disposed between the lower electrode 11 and the oscillation component 12. In one embodiment of the present invention, although not shown in the figure, the insulating layer 15 can also be disposed between the upper electrode 13 and the oscillation component 12. In one embodiment of the present invention, the passivation layer 14 can extend continuously from a position on the oscillation component 12 to a position on the insulating layer 15 through the opening H1 and the cavity C. In more detail, the passivation layer 14 can cover the oscillation component 12 and the upper electrode 13, thereby improving the reliability of the transducer component 1. In addition, the opening H1 of the oscillation component 12 can be connected to the cavity C, the passivation layer 14 can fill the opening H1 of the oscillation component 12 and extend from the opening H1 to the cavity C, and a portion of the passivation layer 14 (for example, the passivation layer 14 disposed in the opening H1) can be in contact with the insulating layer 15, so that the cavity C forms a closed structure.

[0094] In the present invention, other details of the transducer component 1 may be as described above, and will not be repeated here. In addition, the materials and processes of components such as the substrate 100, the lower electrode 11, the oscillation component 12, the upper electrode 13, the passivation layer 14, the first pad P1 and the second pad P2 can also refer to the above description, and will not be repeated here. In the present invention, the method for forming the insulating layer 15 may include chemical vapor deposition, physical vapor deposition, sputtering, coating or a combination of the foregoing, but the present invention is not limited thereto. The "coating method" may be, for example, dip coating, spin coating, roller coating, blade coating, spray coating or a combination of the foregoing, but the present invention is not limited thereto. In the present invention, the material of the insulating layer 15 may include silicon nitride, silicon oxide, silicon oxynitride or a combination thereof, but the present invention is not limited thereto.

[0095] Figure 4 FIG. 1 is a cross-sectional diagram of a transducer assembly according to an embodiment of the present invention. Figure 4 The transducer components and Figure 1C Similar, except for the following differences.

[0096] In one embodiment of the present invention, after removing the sacrificial layer, a step of forming a sealing layer 16 on the oscillating element 12 and covering the opening H1 may be further included. Next, a passivation layer 14 is formed on the sealing layer 16, the oscillating element 12 and the upper electrode 13, thereby forming a Figure 4 The transducer assembly 1 is shown.

[0097] In one embodiment of the present invention, Figure 4As shown, the transducer component 1 may include: a lower electrode 11; an oscillating component 12, which is arranged on the lower electrode 11 and has an opening H1, wherein a cavity C is provided between the lower electrode 11 and the oscillating component 12; an upper electrode 13, which is arranged on the oscillating component 12, wherein in the top-view direction Z of the transducer component 1, the upper electrode 13 overlaps with the lower electrode 11; a sealing layer 16, which is arranged on the oscillating component 12 and covers the opening H1; and a passivation layer 14, which is arranged on the sealing layer 16, the oscillating component 12 and the upper electrode 13.

[0098] In one embodiment of the present invention, after the step of forming the lower electrode 11 and / or before the step of forming the sacrificial layer on the lower electrode 11, the step of forming the insulating layer 15 on the lower electrode 11 using a suitable method may be further included. Figure 4 As shown, the transducer assembly 1 may further include an insulating layer 15 disposed between the upper electrode 13 and the lower electrode 11. More specifically, the insulating layer 15 may be disposed, for example, between the lower electrode 11 and the oscillating assembly 12 to prevent a short circuit between the upper electrode 13 and the lower electrode 11. In one embodiment of the present invention, although not shown in the figures, the insulating layer 15 may be disposed between the upper electrode 13 and the oscillating assembly 12.

[0099] In one embodiment of the present invention, Figure 4 As shown, the opening H1 of the oscillating component 12 can communicate with the cavity C, and the sealing layer 16 can fill the opening H1 of the oscillating component 12 and extend from the opening H1 into the cavity C, forming a closed structure of the cavity C. In one embodiment of the present invention, the sealing layer 16 continuously extends from a position on the oscillating component 12 to a position on the insulating layer 15 through the opening H1 and the cavity C. In the present invention, the provision of the sealing layer 16 can fill the opening H1 of the oscillating component 12 and maintain the ideal thickness of the passivation layer 14, thereby reducing the impact of the passivation layer 14 on the oscillating component 12 and improving the vibration effect of the oscillating component 12.

[0100] In the present invention, other details of the transducer component 1 can be as described above and will not be repeated here. In addition, the materials and processes of components such as the substrate 100, the lower electrode 11, the oscillation component 12, the upper electrode 13, the passivation layer 14, the first pad P1 and the second pad P2 can also refer to the above description and will not be repeated here. In the present invention, the method of forming the insulating layer 15 and the sealing layer 16 can each include chemical vapor deposition, physical vapor deposition, sputtering, coating or a combination of the foregoing, but the present invention is not limited to this. The "coating method" can be, for example, dip coating, spin coating, roller coating, doctor blade coating, spray coating or a combination of the foregoing, but the present invention is not limited to this. In the present invention, the material of the insulating layer 15 can include silicon nitride, silicon oxide, silicon oxynitride or a combination thereof, but the present invention is not limited to this. In the present invention, the material of the sealing layer 16 can include silicon nitride, silicon oxide, silicon oxynitride, an organic compound or a combination thereof, but the present invention is not limited to this. In the present invention, the thickness T4 of the sealing layer 16 may be 0.1 μm to 5 μm (i.e., 0.1 μm≦T4≦5 μm), for example, 0.1 μm to 3 μm, 0.5 μm to 3 μm, 0.5 μm to 2 μm, or 0.5 μm to 1 μm, but the present invention is not limited thereto. Here, the "thickness of the sealing layer" may refer to, for example, the distance between the upper surface of the sealing layer 16 and the upper surface of the oscillating component 12.

[0101] Figure 5 FIG. 1 is a cross-sectional diagram of a transducer assembly according to an embodiment of the present invention. Figure 5 The transducer components and Figure 4 Similar, except for the following differences.

[0102] In one embodiment of the present invention, after the step of forming the oscillating component 12, the step of forming another insulating layer 17 on the oscillating component 12 using a suitable method and patterning the other insulating layer 17 by a yellow light process may be further included. Then, the steps of forming the top electrode 13 on the other insulating layer 17, removing the sacrificial layer, forming the sealing layer 16 on the other insulating layer 17 and covering the opening H1, and forming the passivation layer 14 on the sealing layer 16, the oscillating component 12 and the top electrode 13 are respectively performed, thereby forming the following Figure 5 The transducer assembly 1 is shown.

[0103] In one embodiment of the present invention, Figure 5 As shown, the transducer component 1 may further include another insulating layer 17, which is disposed on the oscillating component 12, wherein the another insulating layer 17 includes a first portion 17A and a second portion 17B. In the top view direction Z of the transducer component 1, the first portion 17A of the another insulating layer 17 overlaps with the upper electrode 13, and the second portion 17B of the another insulating layer 17 overlaps with the sealing layer 16. In one embodiment of the present invention, as Figure 5As shown, the other insulating layer 17 has another opening H2. In the top view direction Z of the transducer assembly 1, the opening H1 of the oscillating assembly 12 overlaps with the other opening H2 of the other insulating layer 17. Therefore, the sealing layer 16 can fill the other opening H2 of the other insulating layer 17 and the opening H1 of the oscillating assembly 12, and extend from the other opening H2 and the opening H1 into the cavity C, forming a closed structure of the cavity C. In the present invention, the other insulating layer 17 can be used to improve the reliability of the transducer assembly 1.

[0104] In the present invention, other details of the transducer component 1 may be as described above, and will not be repeated here. In addition, the materials and processes of components such as the substrate 100, the lower electrode 11, the oscillation component 12, the upper electrode 13, the passivation layer 14, the insulating layer 15, the first pad P1 and the second pad P2 can also refer to the above description, and will not be repeated here. In the present invention, the method of forming another insulating layer 17 may include chemical vapor deposition, physical vapor deposition, sputtering, coating or a combination of the foregoing, but the present invention is not limited thereto. The "coating method" may be, for example, dip coating, spin coating, roller coating, blade coating, spray coating or a combination of the foregoing, but the present invention is not limited thereto. In the present invention, the material of another insulating layer 17 may include silicon nitride, silicon oxide, silicon oxynitride or a combination thereof, but the present invention is not limited thereto.

[0105] Figure 6A FIG. 1 is a schematic diagram of a transducer device according to an embodiment of the present invention. Figure 6B for Figure 6A Schematic diagram of the equivalent circuit of the transducer device. Figure 6C for Figure 6A Schematic cross-sectional view of the transducer device.

[0106] In one embodiment of the present invention, Figure 6A As shown, a plurality of transducer components 1 can be arranged in an array on a substrate 100 to form a two-dimensional (2D) transducer device. Figure 6A As shown, the transducer device may further include a first driving circuit D1 and a second driving circuit D2, which are respectively disposed on the substrate 100, wherein the first driving circuit D1 and the second driving circuit D2 are respectively electrically connected to one of the plurality of transducer components 1. In one embodiment of the present invention, although Figure 6A A first driving circuit D1 and a second driving circuit D2 are used as an example, but in other embodiments of the present invention, the transducer device may include multiple first driving circuits D1 and / or multiple second driving circuits D2, each electrically connected to one of the multiple transducer components 1.

[0107] In one embodiment of the present invention, Figure 6B and Figure 6CAs shown, the transducer device may further include a circuit layer 2, which is disposed between the plurality of transducer components 1 and the substrate 100, wherein the circuit layer 2 may include a first thin-film transistor TFT1 and a second thin-film transistor TFT2, and the first thin-film transistor TFT1 and the second thin-film transistor TFT2 are electrically connected to one of the plurality of transducer components 1. In more detail, the circuit layer 2 may include a first scan line SL1, a second scan line SL2, a drive line DL, and a read line RL, wherein the first scan line SL1 and the drive line DL are electrically connected to the control terminal e1 and the first terminal e2 of the first thin-film transistor TFT1, respectively, and the second scan line SL2 and the read line RL are electrically connected to the control terminal e3 and the first terminal e4 of the second thin-film transistor TFT2, respectively.

[0108] In one embodiment of the present invention, Figure 6B and Figure 6C As shown, the first drive circuit D1 is electrically connected to the first scan line SL1, and the second drive circuit D2 is electrically connected to the second scan line SL2. The first drive circuit D1 can control the first thin-film transistor TFT1 via the first scan line SL1, transmitting the signal of the drive line DL to the transducer component 1, causing the oscillating component 12 in the transducer component 1 to vibrate, thereby generating ultrasonic waves. The second drive circuit D2 can control the second thin-film transistor TFT2 via the second scan line SL2. When the oscillating component 12 in the transducer component 1 receives ultrasonic waves and vibrates, it can output the vibration signal to the read line RL, thereby reading and calculating the result.

[0109] In one embodiment of the present invention, Figure 6B and Figure 6C As shown, the transducer device may further include a power line PL electrically connected to the transducer component 1. In more detail, the power line PL can provide a DC bias to the upper electrode 13 of the transducer component 1 through the first pad P1 and / or the second pad P2. By controlling the voltage of the upper electrode 13 and the lower electrode 11, the oscillation component 12 can vibrate between the cavity C, thereby emitting ultrasonic waves.

[0110] In one embodiment of the present invention, Figure 6C The energy conversion component 1 is based on, for example Figure 1C The transducer assembly 1 shown is taken as an example, but the present invention is not limited thereto. In other embodiments of the present invention, although not shown in the figure, Figure 6C The transducer component 1 can also Figures 2 to 5 The details of the above-mentioned transducer assembly 1 can be as described above and will not be repeated here.

[0111] In one embodiment of the present invention, Figure 6AAs shown, the transducer device may further include an electronic component E disposed on the substrate 100, wherein the electronic component E may be electrically connected to the first drive circuit D1 and the second drive circuit D2, respectively. The electronic component E may, for example, be used to control or receive signals transmitted to the first drive circuit D1 and / or the second drive circuit D2. In one embodiment of the present invention, the electronic component E may be an integrated circuit (IC), but the present invention is not limited thereto.

[0112] In one embodiment of the present invention, Figure 6C As shown, the circuit layer 2 may include: an active layer 21, disposed on the substrate 100, and including a first active device 211 and a second active device 212; a gate insulating layer 22, disposed on the active layer 21; a gate layer 23, disposed on the gate insulating layer 22, and including a first gate 231 and a second gate 232; an insulating layer 24, disposed on the gate layer 23; and an electrode layer 25, disposed on the insulating layer 24, and including a first electrode 251, a second electrode 252, and a third electrode 253. The first electrode 251 and the second electrode 252 may be electrically connected to the first active device 211, respectively, and the second electrode 252 and the third electrode 253 may be electrically connected to the second active device 212, respectively. The first active device 211, the gate insulating layer 22, the first gate 231, the insulating layer 24, the first electrode 251, and the second electrode 252 may form a first thin film transistor TFT1. The second active component 212, the gate insulating layer 22, the second gate 232, the insulating layer 24, the second electrode 252, and the third electrode 253 can form a second thin-film transistor TFT2. In addition, the second electrode 252 can be electrically connected to one of the multiple transducer components 1, thereby transmitting the signal of the first thin-film transistor TFT1 to the transducer component 1, or receiving the signal output by the transducer component 1 to the second thin-film transistor TFT2, but the present invention is not limited to this. It should be noted that the structure of the first thin-film transistor TFT1 and the second thin-film transistor TFT2 in the drawings is only an example and can be adjusted to other stacked structures (such as dual-gate or top-gate transistors) as needed.

[0113] In the present invention, the material of the active layer 21 may include amorphous silicon, polycrystalline silicon (e.g., low-temperature polycrystalline silicon (LTPS)), or an oxide semiconductor (e.g., indium gallium zinc oxide (IGZO) or indium gallium oxide (IGO)), but the present invention is not limited thereto. In the present invention, the materials of the gate insulating layer 22 and the insulating layer 24 may each include silicon nitride, silicon oxide, silicon oxynitride, silicon carbonitride, or a combination thereof, but the present invention is not limited thereto. In the present invention, the materials of the gate layer 23 and the electrode layer 25 may each include a metal material, a metal oxide material, an alloy thereof, or a combination thereof, such as gold, silver, copper, palladium, platinum, ruthenium, aluminum, cobalt, nickel, titanium, molybdenum, manganese, indium zinc oxide (IZO), indium tin oxide (ITO), indium tin zinc oxide (ITZO), indium gallium zinc oxide (IGZO), or aluminum zinc oxide (AZO), but the present invention is not limited thereto.

[0114] In one embodiment of the present invention, Figure 6C As shown, the circuit layer 2 may include a buffer layer 26 disposed between the substrate 100 and the active layer 21. In one embodiment of the present invention, as shown in FIG. Figure 6C As shown, the circuit layer 2 may include a planar layer 27 disposed between the electrode layer 25 and the lower electrode 11. In the present invention, the materials of the buffer layer 26 and the planar layer 27 may each include silicon nitride, silicon oxide, silicon oxynitride, silicon carbonitride, or a combination thereof, but the present invention is not limited thereto.

[0115] Figure 7A FIG. 1 is a schematic diagram of a transducer device according to an embodiment of the present invention. Figure 7B for Figure 7A Schematic diagram of the equivalent circuit of the transducer device. Figure 7C for Figure 7A Schematic cross-sectional view of the transducer device.

[0116] In one embodiment of the present invention, Figure 7A As shown, a plurality of transducer components 1 can be arranged in an array on a substrate 100 to form a two-dimensional (2D) transducer device. Figure 7A As shown, the transducer device may further include a first driving circuit D1 and a multiplexer M (MUX), which are respectively disposed on the substrate 100, wherein the first driving circuit D1 and the multiplexer M are respectively electrically connected to one of the plurality of transducer components 1. Figure 7A A first driving circuit D1 and a multiplexer M are used as an example. However, in other embodiments of the present invention, the transducer device may include multiple first driving circuits D1 and / or multiplexers M, each electrically connected to one of the multiple transducer components 1.

[0117] In one embodiment of the present invention, Figure 7B and Figure 7CAs shown, the transducer device may further include a circuit layer 2 disposed between the plurality of transducer elements 1 and the substrate 100, wherein the circuit layer 2 may include a first thin-film transistor TFT1, the first thin-film transistor TFT1 being electrically connected to one of the plurality of transducer elements 1 and a multiplexer M. In more detail, the circuit layer 2 may include a first scan line SL1, a drive line DL, and a read line RL, wherein the first scan line SL1 and the multiplexer M are electrically connected to a control terminal e1 and a first terminal e2 of the first thin-film transistor TFT, respectively, and the drive line DL and the read line RL are electrically connected to the multiplexer M, respectively. The first drive circuit D1 may control the first thin-film transistor TFT1 via the first scan line SL1, and the multiplexer M may control or switch on the drive line DL or the read line RL to transmit or receive signals.

[0118] In one embodiment of the present invention, Figure 7B and Figure 7C As shown, the transducer device may further include a power line PL electrically connected to the transducer component 1. In more detail, the power line PL can provide a DC bias to the upper electrode 13 of the transducer component 1 through the first pad P1 and / or the second pad P2. By controlling the voltage of the upper electrode 13 and the lower electrode 11, the oscillation component 12 can vibrate between the cavity C, thereby emitting ultrasonic waves.

[0119] In one embodiment of the present invention, Figure 7C The energy conversion component 1 is based on, for example Figure 1C The transducer assembly 1 shown is taken as an example, but the present invention is not limited thereto. In other embodiments of the present invention, although not shown in the figure, Figure 7C The transducer component 1 can also Figures 2 to 5 The details of the above-mentioned transducer assembly 1 can be as described above and will not be repeated here.

[0120] In one embodiment of the present invention, Figure 7A As shown, the transducer device may further include an electronic component E disposed on the substrate 100, wherein the electronic component E may be electrically connected to the first drive circuit D1 and the multiplexer M, respectively. The electronic component E may be used, for example, to control or receive signals transmitted to the first drive circuit D1 and / or the multiplexer M. In one embodiment of the present invention, the electronic component E may be an integrated circuit (IC), but the present invention is not limited thereto.

[0121] In one embodiment of the present invention, Figure 7CAs shown, the circuit layer 2 may include: an active layer 21, disposed on the substrate 100 and including a first active component 211; a gate insulation layer 22, disposed on the active layer 21; a gate layer 23, disposed on the gate insulation layer 22 and including a first gate 231; an insulating layer 24, disposed on the gate layer 23; and an electrode layer 25, disposed on the insulating layer 24 and including a first electrode 251 and a second electrode 252. The first electrode 251 and the second electrode 252 may be electrically connected to the first active component 211, respectively. The first active component 211, the gate insulation layer 22, the first gate 231, the insulating layer 24, the first electrode 251, and the second electrode 252 may form a first thin-film transistor TFT1. Furthermore, the second electrode 252 may be electrically connected to one of the multiple transducer components 1, thereby transmitting a signal from the first thin-film transistor TFT1 to the transducer component 1 or receiving a signal output by the transducer component 1 to the first thin-film transistor TFT1, but the present invention is not limited to this. It should be noted that the structure of the first thin film transistor TFT1 in the drawings is merely an example and can be adjusted to other stacked structures (such as a dual-gate or top-gate transistor) according to needs.

[0122] In the present invention, the material of the active layer 21 may include amorphous silicon, polycrystalline silicon (e.g., low-temperature polycrystalline silicon (LTPS)), or an oxide semiconductor (e.g., indium gallium zinc oxide (IGZO) or indium gallium oxide (IGO)), but the present invention is not limited thereto. In the present invention, the materials of the gate insulating layer 22 and the insulating layer 24 may each include silicon nitride, silicon oxide, silicon oxynitride, silicon carbonitride, or a combination thereof, but the present invention is not limited thereto. In the present invention, the materials of the gate layer 23 and the electrode layer 25 may each include a metal material, a metal oxide material, an alloy thereof, or a combination thereof, such as gold, silver, copper, palladium, platinum, ruthenium, aluminum, cobalt, nickel, titanium, molybdenum, manganese, indium zinc oxide (IZO), indium tin oxide (ITO), indium tin zinc oxide (ITZO), indium gallium zinc oxide (IGZO), or aluminum zinc oxide (AZO), but the present invention is not limited thereto.

[0123] In one embodiment of the present invention, Figure 7C As shown, the circuit layer 2 may include a buffer layer 26 disposed between the substrate 100 and the active layer 21. In one embodiment of the present invention, as shown in FIG. Figure 7C As shown, the circuit layer 2 may include a planar layer 27 disposed between the electrode layer 25 and the lower electrode 11. In the present invention, the materials of the buffer layer 26 and the planar layer 27 may each include silicon nitride, silicon oxide, silicon oxynitride, silicon carbonitride, or a combination thereof, but the present invention is not limited thereto.

[0124] The above specific embodiments are to be construed as merely illustrative, and not limitative of the remainder of the disclosure in any way whatsoever.

Claims

1. A transducer device, characterized in that: Include: substrate; and A plurality of transducer components are disposed on the substrate, and each transducer component comprises: lower electrode; an oscillating component disposed on the lower electrode and having an opening, wherein a cavity is defined between the lower electrode and the oscillating component; an upper electrode disposed on the oscillating component, wherein the upper electrode overlaps with the lower electrode in a top view; and A passivation layer is disposed on the oscillation component and the upper electrode, and in the opening of the oscillation component, wherein the passivation layer extends continuously from a position on the oscillation component to a position on the lower electrode through the opening and the cavity.

2. The transducer device according to claim 1, characterized in that: The passivation layer is continuously arranged on the oscillating component and the upper electrode, and in the opening.

3. The transducer device according to claim 1, characterized in that: The oscillating component and the passivation layer are made of different materials.

4. The transducer device according to claim 1, characterized in that: The passivation layer includes a first portion and a second portion, the first portion and the second portion are separated from each other, wherein, in a top view direction, the first portion overlaps with the upper electrode, and the second portion covers the opening.

5. The transducer device according to claim 1, characterized in that: Each transducer assembly further includes an insulating layer disposed between the upper electrode and the lower electrode.

6. The transducer device according to claim 1, characterized in that: It also includes a circuit layer, which is arranged between the multiple transducer components and the substrate. The circuit layer includes a first thin film transistor and a second thin film transistor. The first thin film transistor and the second thin film transistor are electrically connected to one of the multiple transducer components.

7. The transducer device according to claim 6, characterized in that: The circuit layer includes a first scan line, a second scan line, a drive line and a read line, wherein the first scan line and the drive line are electrically connected to the control end and the first end of the first thin film transistor respectively, and the second scan line and the read line are electrically connected to the control end and the first end of the second thin film transistor respectively.

8. A transducer device, characterized in that: Include: substrate; and A plurality of transducer components are disposed on the substrate, and each transducer component comprises: lower electrode; an oscillating component disposed on the lower electrode and having an opening, wherein a cavity is defined between the lower electrode and the oscillating component; an upper electrode disposed on the oscillating component, wherein the upper electrode overlaps with the lower electrode in a top view; a sealing layer, disposed on the oscillating component and covering the opening; and A passivation layer is arranged on the sealing layer, the oscillating component and the upper electrode.

9. The energy conversion device according to claim 8, characterized in that: Each transducer assembly further includes an insulating layer disposed between the upper electrode and the lower electrode.

10. The energy conversion device according to claim 8, characterized in that: It also includes a circuit layer, which is arranged between the multiple transducer components and the substrate. The circuit layer includes a first thin film transistor and a second thin film transistor. The first thin film transistor and the second thin film transistor are electrically connected to one of the multiple transducer components.

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