Primary side inner phase shift modulation control method and device and electronic equipment
By adjusting the phase shift angle between the switch tubes and the pulse width of the voltage, the problem of resonant current oscillation in single-stage OBC control is solved, and a more stable control effect is achieved.
Patent Information
- Application Number
- CN202510693114.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-05-27
- Publication Date
- 2025-08-12
AI Technical Summary
In single-stage OBC control, when the AC voltage is near zero crossing, the resonant current oscillates due to the fixed duty cycle of the primary side, resulting in unstable control.
By adjusting the phase shift angle between the switch tubes, the pulse width and phase difference of the voltage, especially the pulse width of the input voltage of the primary resonant cavity, the resonant current oscillation of the interlaced parallel totem pole-type dual-source bridge circuit is reduced.
The resonant current waveform is optimized and the stability of single-stage OBC control is improved.
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Figure CN120474349A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the technical field of single-stage on-board chargers (OBCs), and in particular to a primary-side internal phase-shift modulation control method, device, and electronic equipment. Background Art
[0002] Currently, in existing single-stage OBC control, when the AC (alternating current) voltage is near zero, the primary-side duty cycle is fixed at 50%. This can cause the primary-side bridge arm voltage to suddenly change from positive to negative, while the secondary-side bridge arm voltage is zero. Under this condition, the resonant current will follow the primary-side voltage change, ultimately causing resonant current oscillation and leading to instability in the single-stage OBC control. Summary of the Invention
[0003] In view of this, an object of the present invention is to provide a primary-side phase-shift modulation control method, device and electronic device to optimize the resonant current waveform and improve the stability of single-stage OBC control.
[0004] In the first aspect, an embodiment of the present invention provides a primary side phase shift modulation control method, the method comprising: adjusting the pulse width of the voltage and the phase difference between different voltages based on the phase shift angle between the switching tubes; wherein the voltage comprises: the primary side resonant cavity input voltage and the secondary side resonant cavity output voltage; if the primary side resonant cavity input voltage has two working conditions of positive level and negative level within the target time length, adjusting the pulse width of the primary side resonant cavity input voltage to reduce the oscillation of the resonant current of the staggered parallel totem pole dual-source bridge circuit.
[0005] In an optional embodiment of the present application, the above method is applied to an interleaved parallel totem pole dual-source bridge circuit, and the switching tubes on the primary side of the interleaved parallel totem pole dual-source bridge circuit include: switching tube S1, switching tube S2, switching tube S3 and switching tube S4; the switching tubes on the secondary side of the interleaved parallel totem pole dual-source bridge circuit include: switching tube S5, switching tube S6, switching tube S7 and switching tube S8; the steps of adjusting the pulse width of the voltage and the phase difference between different voltages based on the phase shift angle between the switching tubes include: adjusting the pulse width of the primary resonant cavity input voltage based on the first phase shift angle between the switching tube S1 and the switching tube S4; adjusting the pulse width of the secondary resonant cavity output voltage based on the second phase shift angle between the switching tube S5 and the switching tube S8; and adjusting the phase difference between the primary resonant cavity input voltage and the secondary resonant cavity output voltage based on the phase shift angle between the primary and secondary bridges.
[0006] In an optional embodiment of the present application, the above method further includes: calculating the phase shift angle between the switch tube S5 and the switch tube S8 by the following formula: φss = π × Vcf / (n × Vdc (t)); wherein φss is the second phase shift angle, and Vcf is the bus capacitance C of the staggered parallel totem pole dual-source bridge circuit. f voltage, n is the transformer primary-to-secondary ratio of the staggered parallel totem pole dual-source bridge circuit, Vdc is the DC output side voltage of the staggered parallel totem pole dual-source bridge circuit, and Vdc is a function of time t.
[0007] In an optional embodiment of the present application, the above method also includes: within a switching cycle, the pulse width of the output voltage of the secondary resonant cavity exists in a 0-level state for a target duration; when the second phase shift angle meets the preset first condition, the input voltage of the primary resonant cavity exists in two working conditions of positive level and negative level within the target duration, and the resonant current oscillates within the target duration; the first condition is: 2×φps+φss<π; where φps is the phase shift angle between the primary and secondary bridges.
[0008] In an optional embodiment of the present application, after the above-mentioned step of the pulse width of the secondary side resonant cavity output voltage being in a 0-level state for a target duration within one switching cycle, the method further includes: when the second phase shift angle satisfies a preset second condition, the primary side resonant cavity input voltage only has one working condition of a positive level or a negative level within the target duration, and the resonant current does not oscillate within the target duration; the second condition is: 2×φps+φss≥π.
[0009] In an optional embodiment of the present application, the above-mentioned step of adjusting the pulse width of the primary resonant cavity input voltage includes: reducing the pulse width of the primary resonant cavity input voltage so that the falling edge of the primary resonant cavity input voltage coincides with the falling edge of the secondary resonant cavity output voltage.
[0010] In an optional embodiment of the present application, the above method also includes: determining the relationship between the first phase shift angle, the first phase shift angle and the phase shift angle between the primary and secondary bridges by the following formula: φpp=π-(φss+2×φps); wherein φpp is the first phase shift angle.
[0011] In an optional embodiment of the present application, the above method also includes: determining the reduced primary resonant cavity input voltage by the following formula: Uab = (φss + 2×φps) / π×Vcf; wherein Uab is the primary resonant cavity input voltage.
[0012] In the second aspect, an embodiment of the present invention also provides a primary side phase shift modulation control device, the device including: a voltage pulse width and phase difference adjustment module, which is used to adjust the voltage pulse width and the phase difference between different voltages based on the phase shift angle between the switching tubes; wherein the voltage includes: the primary side resonant cavity input voltage and the secondary side resonant cavity output voltage; the primary side resonant cavity input voltage adjustment module is used to adjust the pulse width of the primary side resonant cavity input voltage if the primary side resonant cavity input voltage has two working conditions of positive level and negative level within the target time length, so as to reduce the oscillation of the resonant current of the staggered parallel totem pole dual-source bridge circuit.
[0013] In a third aspect, an embodiment of the present invention further provides an electronic device comprising a processor and a memory, wherein the memory stores computer executable instructions that can be executed by the processor, and the processor executes the computer executable instructions to implement the above-mentioned primary side intra-phase shift modulation control method.
[0014] The embodiments of the present invention bring the following beneficial effects:
[0015] Embodiments of the present invention provide a primary-side phase-shift modulation control method, device, and electronic device. These methods adjust the voltage pulse width and the phase difference between different voltages based on the phase shift angle between switching transistors. The voltages include the primary resonant cavity input voltage and the secondary resonant cavity output voltage. If the primary resonant cavity input voltage is both positive and negative within a target duration, the pulse width of the primary resonant cavity input voltage is adjusted to reduce the oscillation of the resonant current in an interleaved parallel totem-pole dual-source bridge circuit. This approach optimizes the resonant current waveform and improves the stability of single-stage OBC control.
[0016] Other features and advantages of the present disclosure will be set forth in the following description, or some features and advantages may be inferred or unambiguously determined from the description, or may be learned by practicing the above-mentioned technology of the present disclosure.
[0017] In order to make the above-mentioned objectives, features and advantages of the present disclosure more obvious and easy to understand, preferred embodiments are given below and described in detail with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS
[0018] In order to more clearly illustrate the specific embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the specific embodiments or the description of the prior art. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.
[0019] Figure 1 A flow chart of a primary side phase shift modulation control method provided by an embodiment of the present invention;
[0020] Figure 2 A topological diagram of a staggered parallel totem pole DAB circuit provided in an embodiment of the present invention;
[0021] Figure 3 A schematic diagram of an oscillation waveform of the resonant current ir when Ucd is at level 0 provided in an embodiment of the present invention;
[0022] Figure 4 A flow chart of another primary side intra-phase shift modulation control method provided by an embodiment of the present invention;
[0023] Figure 5 A schematic diagram of the relationship between Uab and Ucd provided in an embodiment of the present invention;
[0024] Figure 6 A schematic diagram of a simulation waveform of the resonant current ir when 2×φps+φss=π is provided in an embodiment of the present invention;
[0025] Figure 7 A schematic diagram of a primary side internal phase shift strategy provided by an embodiment of the present invention;
[0026] Figure 8 A schematic diagram of a simulation waveform of the resonant current ir when φpp=π-(φss+2×φps) provided by an embodiment of the present invention;
[0027] Figure 9 A schematic structural diagram of a primary-side phase-shift modulation control device provided by an embodiment of the present invention;
[0028] Figure 10 A schematic structural diagram of an electronic device provided by an embodiment of the present invention. DETAILED DESCRIPTION
[0029] To make the objectives, technical solutions, and advantages of the embodiments of the present invention more clear, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the embodiments described are only part of the embodiments of the present invention, not all of them. All other embodiments obtained by ordinary technicians in this field based on the embodiments of the present invention without making any creative efforts shall fall within the scope of protection of the present invention.
[0030] Currently, in existing single-stage OBC control, when the AC (alternating current) voltage is near zero, the primary-side duty cycle is fixed at 50%. This can cause the primary-side bridge arm voltage to suddenly change from positive to negative, while the secondary-side bridge arm voltage is zero. Under this condition, the resonant current will follow the primary-side voltage change, ultimately causing resonant current oscillation and leading to instability in the single-stage OBC control.
[0031] Based on this, an embodiment of the present invention provides a primary-side phase-shift modulation control method, device, and electronic device, specifically providing a primary-side phase-shift modulation control strategy based on a single-stage OBC, which can reduce the equivalent duty cycle of the bus voltage output to the resonant converter by phase shifting φpp for a group of pairs of tubes that are simultaneously turned on on the primary side, wherein the duty cycle is equal to twice the primary-secondary bridge phase shift angle φps plus the secondary-side phase shift angle φss. This embodiment can solve the problem of resonant current oscillation near the zero-crossing point in single-stage OBC control by reducing the equivalent Uab voltage, because the primary-side duty cycle is fixed at 50%, thereby optimizing the resonant current waveform and improving the stability of single-stage OBC control.
[0032] To facilitate understanding of this embodiment, a primary-side intra-phase shift modulation control method disclosed in an embodiment of the present invention is first introduced in detail.
[0033] Example 1:
[0034] The embodiment of the present invention provides a primary side phase shift modulation control method, see Figure 1 The flowchart of a primary side inner phase shift modulation control method is shown, and the primary side inner phase shift modulation control method includes the following steps:
[0035] Step S102 , adjusting the pulse width of the voltage and the phase difference between different voltages based on the phase shift angle between the switching tubes; wherein the voltage includes: the primary resonant cavity input voltage and the secondary resonant cavity output voltage.
[0036] In this embodiment, the primary resonant cavity input voltage and the secondary resonant cavity output voltage, as well as the phase difference between the primary resonant cavity input voltage and the secondary resonant cavity output voltage, can be adjusted based on the phase shift angle between the switching tubes.
[0037] In some embodiments, the above method is applied to an interleaved parallel totem pole dual-source bridge circuit, where the primary side switches of the interleaved parallel totem pole dual-source bridge circuit include: switch tube S1, switch tube S2, switch tube S3, and switch tube S4; the secondary side switches of the interleaved parallel totem pole dual-source bridge circuit include: switch tube S5, switch tube S6, switch tube S7, and switch tube S8.
[0038] See also Figure 2 The topology diagram of a staggered parallel totem-pole DAB (Dual Active Bridge) circuit is shown. S1, S2, S3, S4, S5, S6, S7, and S8 are switching transistors that operate at high frequencies. N1 and N2 are synchronous rectifiers that operate at a low frequency of 50Hz depending on the positive or negative AC (alternating current) voltage. Vac represents the input AC voltage, iac represents the input AC current, and Uab represents the primary resonant cavity input voltage, Ucd represents the secondary resonant cavity output voltage, Vdc represents the DC output side voltage, Lf1 and Lf2 are boost inductors, Cf is the bus capacitor, Cr is the resonant capacitor, Lr is the resonant inductor, T1 is an ideal transformer, and n represents the transformer primary-to-secondary ratio.
[0039] Among them, the switch tubes S1, S2, S3, S4 and the synchronous rectifier tubes N1 and N2 form a staggered parallel PFC structure, and the switch tubes S1, S2, S3, S4, S5, S6, S7, and S8 form an LC structure, all of which output according to a 0.5 duty cycle. Since the duty cycle of the PFC part is 0.5, at this time C f The voltage on Vcf = 2×Vac.
[0040] In some embodiments, the pulse width of the primary resonant cavity input voltage can be adjusted based on the first phase shift angle between the switch tube S1 and the switch tube S4; the pulse width of the secondary resonant cavity output voltage can be adjusted based on the second phase shift angle between the switch tube S5 and the switch tube S8; and the phase difference between the primary resonant cavity input voltage and the secondary resonant cavity output voltage can be adjusted based on the phase shift angle between the primary and secondary bridges.
[0041] See also Figure 3 The figure shows an oscillation waveform diagram of the resonant current ir when Ucd is at level 0. The driving of each group of bridge arms is complementary. By adjusting the first phase shift angle φpp between the switch tube S1 and the switch tube S4, the pulse width of the primary side resonant cavity input voltage Uab can be adjusted. By adjusting the second phase shift angle φss between the switch tube S5 and the switch tube S8, the pulse width of the secondary side resonant cavity output voltage Ucd can be adjusted. By adjusting the primary and secondary phase shift angles φps, the phase difference between Uab and Ucd can be adjusted.
[0042] In some embodiments, the above method further includes: calculating the phase shift angle between the switch tube S5 and the switch tube S8 by the following formula: φss = π×Vcf / (n×Vdc(t)); wherein φss is the second phase shift angle, and Vcf is the bus capacitance C of the staggered parallel totem pole dual-source bridge circuit. f voltage, n is the transformer primary-to-secondary ratio of the staggered parallel totem pole dual-source bridge circuit, Vdc is the DC output side voltage of the staggered parallel totem pole dual-source bridge circuit, and Vdc is a function of time t.
[0043] φss varies based on the AC voltage phase k|sin(ωt)| and can be calculated using the following formula: φss = π × Vcf / (n × Vdc(t)). φss increases gradually with increasing AC voltage. φps can be controlled in a closed-loop manner based on the AC current. φps increases with power. When the power is fixed, φps also remains fixed.
[0044] In step S104 , if the primary resonant cavity input voltage has two operating conditions, positive and negative, within the target duration, the pulse width of the primary resonant cavity input voltage is adjusted to reduce the oscillation of the resonant current of the staggered parallel totem pole dual-source bridge circuit.
[0045] When φpp=0, the pulse width of Uab is the largest. In a switching cycle, when the AC voltage is relatively small, φss is small, and Ucd has a long 0-level state. At this time, two working conditions of Uab being positive and negative will appear at the same time, causing the resonant current ir to oscillate repeatedly during this period, such as Figure 3 shown.
[0046] At this time, this embodiment can adjust the pulse width of the primary resonant cavity input voltage Uab to reduce the oscillation of the resonant current ir, thereby optimizing the resonant current waveform and improving the stability of the single-stage OBC control.
[0047] An embodiment of the present invention provides a primary-side phase-shift modulation control method that adjusts the voltage pulse width and the phase difference between different voltages based on the phase shift angle between switching transistors. The voltages include the primary resonant cavity input voltage and the secondary resonant cavity output voltage. If the primary resonant cavity input voltage is in both positive and negative operating conditions within a target duration, the pulse width of the primary resonant cavity input voltage is adjusted to reduce the oscillation of the resonant current in an interleaved parallel totem-pole dual-source bridge circuit. This method optimizes the resonant current waveform and improves the stability of single-stage OBC control.
[0048] Example 2:
[0049] This embodiment provides another primary side phase shift modulation control method. This method is implemented on the basis of the above embodiment, focusing on the implementation of adjusting the pulse width of the primary side resonant cavity input voltage to reduce the oscillation of the resonant current of the staggered parallel totem pole dual source bridge circuit. Figure 4 The flowchart of another primary side inner phase shift modulation control method is shown, and the primary side inner phase shift modulation control method includes the following steps:
[0050] Step S402 , adjusting the pulse width of the voltage and the phase difference between different voltages based on the phase shift angle between the switching tubes; wherein the voltage includes: the primary resonant cavity input voltage and the secondary resonant cavity output voltage.
[0051] In step S404, if the primary resonant cavity input voltage has both positive and negative operating conditions within the target duration, the pulse width of the primary resonant cavity input voltage is reduced so that the falling edge of the primary resonant cavity input voltage coincides with the falling edge of the secondary resonant cavity output voltage, thereby reducing the oscillation of the resonant current of the interleaved parallel totem pole dual-source bridge circuit.
[0052] In some embodiments, within a switching cycle, the pulse width of the output voltage of the secondary resonant cavity exists in a 0-level state for a target duration; when the second phase shift angle meets a preset first condition, the input voltage of the primary resonant cavity exists in two operating conditions of positive and negative levels within the target duration, and the resonant current oscillates within the target duration; the first condition is: 2×φps+φss<π; where φps is the phase shift angle between the primary and secondary bridges.
[0053] See also Figure 5 The figure shows a schematic diagram of the relationship between Uab and Ucd. Within a switching period Ts, if φpp=0 is kept unchanged, since φss will slowly increase with the AC voltage within a sinusoidal period, there will be two situations where the falling edge of Ucd is before Uab and after Uab, respectively. The above two situations correspond to the two operating conditions of Uab's positive level and negative level, respectively.
[0054] In some embodiments, when the second phase shift angle satisfies a preset second condition, the primary resonant cavity input voltage only has one of a positive level or a negative level within a target time length, and the resonant current does not oscillate within the target time length; the second condition is: 2×φps+φss≥π.
[0055] like Figure 5 As shown, within a switching cycle Ts, if the falling edge of Uab is before the falling edge of Ucd or is consistent with the falling edge of Ucd, then Ucd is in the 0 level state and Uab will only have one direction level, that is, Uab only has one working condition of positive level or negative level.
[0056] like Figure 5 As shown in the figure, when φss increases from φss1 to φss2, the falling edge of Ucd moves from the left to the right of Uab. Ts represents a switching cycle, and the corresponding angle is 2π. By calculation, it can be seen that when 2×φps+φss=π, the falling edges of Uab and Ucd coincide. Figure 6 The schematic diagram of the simulation waveform of the resonant current ir when 2×φps+φss=π is shown in FIG. Figure 6 The figure shows the simulated waveforms of the current ir on the bus capacitance Cr and the resonant inductor Lr of the resonant cavity at this time.
[0057] contrast Figure 3 and Figure 6 It can be seen that when 2×φps+φss<π, Ucd is in the 0-level state, Uab will have two levels of positive voltage and negative voltage, and the resonant current ir will oscillate as the direction of Uab changes. When 2×φps+φss>=π, this problem does not exist, so the pulse width of Uab when 2×φps+φss<π can be adjusted to reduce the oscillation of ir and make the change of the resonant current ir in each switching cycle smoother.
[0058] In some embodiments, the relationship between the first phase shift angle, the first phase shift angle, and the primary-secondary bridge phase shift angle can be determined by the following formula: φpp=π-(φss+2×φps); where φpp is the first phase shift angle.
[0059] In some embodiments, the reduced primary resonant cavity input voltage can be determined by the following formula: Uab=(φss+2×φps) / π×Vcf; wherein Uab is the primary resonant cavity input voltage.
[0060] According to the topological model, Uab=(π-φpp) / π×Vcf. When 2×φps+φss is greater than π, let φpp=0, Uab=Vcf, and Figure 3 The same working conditions.
[0061] In order to reduce the resonant current ir when 2×φps+φss is less than or equal to π while ensuring stable output power, the pulse width of Uab can be reduced so that Uab coincides with the falling edge of Ucd. Let φpp=π-(φss+2×φps), and substitute it into the equation to get Uab=(φss+2×φps) / π×Vcf.
[0062] When φss is equal to 0, let Uab = Vcf × 2 × φps / π; when φss is greater than 0 and φss + 2 × φps is less than π, Uab slowly increases from Vcf × 2 × φps / π to Vcf; when φss + 2 × φps is equal to π, substitute into the calculation and let Uab = Vcf.
[0063] When 2×φps+φss is less than or equal to π, the primary side phase shift strategy of the switches S1, S2, S3, and S4 can be found in Figure 7 The schematic diagram of a primary side internal phase shift strategy is shown:
[0064] See also Figure 8 The schematic diagram of the simulation waveform of the resonant current ir when φpp=π-(φss+2×φps) is shown in FIG. Figure 8 The simulated waveforms of the current ir on the bus capacitance Cr and the resonant inductor Lr of the resonant cavity at this time are shown.
[0065] like Figure 8 As shown in the figure, when Ucd is at 0 level, Uab can only be at 0 level or in the same direction as Ucd's subsequent level. When Uab and Ucd are at 0 level, ir changes slowly. When Ucd is at 0 level but Uab is not at 0 level, ir begins to rise rapidly, and the secondary side begins to store energy for boosting. When both Uab and Ucd are at 0 level, ir drops rapidly, and the transformer stores energy and, together with Ucd, boosts the output voltage.
[0066] The above method provided by the embodiment of the present invention specifically provides a primary side phase shift modulation control strategy based on a single-stage OBC, which can adjust the pulse width of the voltage and the phase difference between different voltages based on the phase shift angle between the switching tubes; wherein the voltage includes: the primary side resonant cavity input voltage and the secondary side resonant cavity output voltage.
[0067] The above-mentioned method provided by an embodiment of the present invention can also, within a switching cycle, have the pulse width of the secondary resonant cavity output voltage exist in a zero-level state for a target duration; when the second phase-shift angle satisfies a preset first condition, the primary resonant cavity input voltage exists in two operating conditions, positive and negative, within the target duration, and the resonant current oscillates within the target duration; the first condition is: 2×φps+φss<π; where φps is the phase-shift angle between the primary and secondary bridges. When the second phase-shift angle satisfies a preset second condition, the primary resonant cavity input voltage exists in only one operating condition, positive or negative, within the target duration, and the resonant current does not oscillate within the target duration; the second condition is: 2×φps+φss≥π.
[0068] The above method provided by the embodiment of the present invention reduces the pulse width of the primary resonant cavity input voltage so that the falling edge of the primary resonant cavity input voltage coincides with the falling edge of the secondary resonant cavity output voltage if the primary resonant cavity input voltage exists in two operating conditions of positive level and negative level within the target time length, so as to reduce the oscillation of the resonant current of the staggered parallel totem pole dual-source bridge circuit.
[0069] The method provided in an embodiment of the present invention reduces the equivalent duty cycle of the bus voltage output to the resonant converter by shifting the primary-side transistor pairs simultaneously through a phase shift φpp, where the duty cycle is equal to twice the primary-secondary bridge phase shift angle φps plus the secondary-side phase shift angle φss. This embodiment solves the problem of resonant current oscillation near the zero-crossing point in single-stage OBC control by reducing the equivalent Uab voltage, due to the primary-side duty cycle being fixed at 50% when the AC voltage is near zero. This optimizes the resonant current waveform and improves the stability of single-stage OBC control.
[0070] Example 3:
[0071] Corresponding to the above method embodiment, the embodiment of the present invention provides a primary side phase shift modulation control device, see Figure 9 The structure diagram of a primary side inner phase shift modulation control device is shown, and the primary side inner phase shift modulation control device includes:
[0072] The voltage pulse width and phase difference adjustment module 91 is used to adjust the voltage pulse width and the phase difference between different voltages based on the phase shift angle between the switching tubes; wherein the voltage includes: the primary resonant cavity input voltage and the secondary resonant cavity output voltage;
[0073] The primary resonant cavity input voltage regulating module 92 is used to adjust the pulse width of the primary resonant cavity input voltage if the primary resonant cavity input voltage exists in two working conditions of positive level and negative level within the target time length, so as to reduce the oscillation of the resonant current of the staggered parallel totem pole dual-source bridge circuit.
[0074] An embodiment of the present invention provides a primary-side phase-shift modulation control device that adjusts the voltage pulse width and the phase difference between different voltages based on the phase shift angle between switching transistors. The voltages include the primary resonant cavity input voltage and the secondary resonant cavity output voltage. If the primary resonant cavity input voltage is in both positive and negative operating conditions within a target duration, the pulse width of the primary resonant cavity input voltage is adjusted to reduce the oscillation of the resonant current in an interleaved parallel totem pole dual-source bridge circuit. This approach optimizes the resonant current waveform and improves the stability of single-stage OBC control.
[0075] The above-mentioned device is applied to an interleaved parallel totem pole type dual-source bridge circuit. The primary side switching tubes of the interleaved parallel totem pole type dual-source bridge circuit include: switching tube S1, switching tube S2, switching tube S3 and switching tube S4; the secondary side switching tubes of the interleaved parallel totem pole type dual-source bridge circuit include: switching tube S5, switching tube S6, switching tube S7 and switching tube S8; the above-mentioned voltage pulse width and phase difference adjustment module is used to adjust the pulse width of the primary side resonant cavity input voltage based on the first phase shift angle between the switching tube S1 and the switching tube S4; adjust the pulse width of the secondary side resonant cavity output voltage based on the second phase shift angle between the switching tube S5 and the switching tube S8; and adjust the phase difference between the primary side resonant cavity input voltage and the secondary side resonant cavity output voltage based on the phase shift angle between the primary and secondary bridges.
[0076] The voltage pulse width and phase difference adjustment module is also used to calculate the phase shift angle between the switch tube S5 and the switch tube S8 by the following formula: φss = π × Vcf / (n × Vdc (t)); where φss is the second phase shift angle, and Vcf is the bus capacitance C of the staggered parallel totem pole dual-source bridge circuit. f voltage, n is the transformer primary-to-secondary ratio of the staggered parallel totem pole dual-source bridge circuit, Vdc is the DC output side voltage of the staggered parallel totem pole dual-source bridge circuit, and Vdc is a function of time t.
[0077] The above-mentioned primary resonant cavity input voltage regulation module is also used to ensure that the pulse width of the secondary resonant cavity output voltage is in a zero-level state for a target duration within a switching cycle; when the second phase shift angle meets the preset first condition, the primary resonant cavity input voltage exists in two operating conditions of positive and negative levels within the target duration, and the resonant current oscillates within the target duration; the first condition is: 2×φps+φss<π; where φps is the phase shift angle between the primary and secondary bridges.
[0078] The above-mentioned primary resonant cavity input voltage regulation module is also used to ensure that when the second phase shift angle meets the preset second condition, the primary resonant cavity input voltage only has one operating condition of positive level or negative level within the target time length, and the resonant current does not oscillate within the target time length; the second condition is: 2×φps+φss≥π.
[0079] The primary resonant cavity input voltage regulating module is used to reduce the pulse width of the primary resonant cavity input voltage so that the falling edge of the primary resonant cavity input voltage coincides with the falling edge of the secondary resonant cavity output voltage.
[0080] The above-mentioned primary resonant cavity input voltage regulation module is also used to determine the first phase shift angle, the relationship between the first phase shift angle and the primary-secondary bridge phase shift angle through the following formula: φpp=π-(φss+2×φps); where φpp is the first phase shift angle.
[0081] The above-mentioned primary resonant cavity input voltage regulation module is also used to determine the reduced primary resonant cavity input voltage through the following formula: Uab=(φss+2×φps) / π×Vcf; where Uab is the primary resonant cavity input voltage.
[0082] Those skilled in the art can clearly understand that, for the convenience and brevity of description, the specific working process of the primary-side intra-phase-shift modulation control device described above can refer to the corresponding process in the aforementioned embodiment of the primary-side intra-phase-shift modulation control method, and will not be repeated here.
[0083] Example 4:
[0084] The embodiment of the present invention further provides an electronic device for executing the above-mentioned primary side internal phase shift modulation control method; Figure 10 A structural schematic diagram of an electronic device is shown, which includes a memory 100 and a processor 101, wherein the memory 100 is used to store one or more computer instructions, and the one or more computer instructions are executed by the processor 101 to implement the above-mentioned primary side phase shift modulation control method.
[0085] Furthermore, Figure 10 The electronic device shown further includes a bus 102 and a communication interface 103 , and the processor 101 , the communication interface 103 and the memory 100 are connected via the bus 102 .
[0086] The memory 100 may include a high-speed random access memory (RAM), and may also include a non-volatile memory, such as at least one disk storage. The communication connection between the system network element and at least one other network element is achieved through at least one communication interface 103 (which may be wired or wireless), and the Internet, wide area network, local area network, metropolitan area network, etc. may be used. The bus 102 may be an ISA bus, a PCI bus, or an EISA bus. The bus can be divided into an address bus, a data bus, a control bus, etc. For ease of representation, Figure 10 Only one bidirectional arrow is used in the diagram, but this does not mean that there is only one bus or one type of bus.
[0087] The processor 101 may be an integrated circuit chip with signal processing capabilities. During implementation, each step of the above method can be completed by hardware integrated logic circuits in the processor 101 or software instructions. The above processor 101 may be a general-purpose processor, including a central processing unit (CPU), a network processor (NP), etc.; it may also be a digital signal processor (DSP), an application-specific integrated circuit (ASIC), a field-programmable gate array (FPGA), or other programmable logic devices, discrete gate or transistor logic devices, or discrete hardware components. It can implement or execute the various methods, steps, and logic block diagrams disclosed in the embodiments of the present invention. The general-purpose processor may be a microprocessor or any conventional processor. The steps of the method disclosed in conjunction with the embodiments of the present invention can be directly embodied as being executed by a hardware decoding processor, or executed by a combination of hardware and software modules in the decoding processor. The software module can be located in a storage medium well-known in the art, such as a random access memory, flash memory, read-only memory, programmable read-only memory, electrically erasable programmable memory, or register. The storage medium is located in the memory 100, and the processor 101 reads the information in the memory 100 and, in conjunction with its hardware, completes the steps of the method of the aforementioned embodiment.
[0088] An embodiment of the present invention also provides a computer-readable storage medium, which stores computer-executable instructions. When the computer-executable instructions are called and executed by a processor, the computer-executable instructions prompt the processor to implement the above-mentioned primary side phase shift modulation control method. The specific implementation can be found in the method embodiment and will not be repeated here.
[0089] The computer program product of the primary-side phase-shift modulation control method, device, and electronic device provided in the embodiments of the present invention includes a computer-readable storage medium storing program code. The instructions included in the program code can be used to execute the method in the previous method embodiment. The specific implementation can be found in the method embodiment and will not be repeated here.
[0090] Those skilled in the art will clearly understand that, for the convenience and brevity of description, the specific working process of the system and / or device described above can refer to the corresponding process in the aforementioned method embodiment and will not be repeated here.
[0091] In addition, in the description of the embodiments of the present invention, unless otherwise expressly specified or limited, the terms "mounted," "connected," and "connected" should be understood in a broad sense. For example, they may refer to fixed connections, detachable connections, or integral connections; they may refer to mechanical connections or electrical connections; they may refer to direct connections or indirect connections through an intermediate medium; and they may refer to internal communication between two components. Those skilled in the art will understand the specific meanings of the above terms in the present invention based on the specific circumstances.
[0092] If the functions are implemented in the form of software functional units and sold or used as independent products, they can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the present invention, or the part that contributes to the prior art, or the part of the technical solution, can be embodied in the form of a software product. The computer software product is stored in a storage medium and includes several instructions for enabling a computer device (which can be a personal computer, a server, or a network device, etc.) to execute all or part of the steps of the method described in each embodiment of the present invention. The aforementioned storage medium includes various media that can store program codes, such as a USB flash drive, a mobile hard disk, a read-only memory (ROM), a random access memory (RAM), a magnetic disk, or an optical disk.
[0093] In the description of the present invention, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings and are intended solely to facilitate and simplify the description of the present invention. They are not intended to indicate or imply that the devices or components referred to must have, be constructed, or operate in a specific orientation, and therefore should not be construed as limitations on the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.
[0094] Finally, it should be noted that the above-described embodiments are only specific implementation methods of the present invention, which are used to illustrate the technical solutions of the present invention, rather than to limit them. The scope of protection of the present invention is not limited thereto. Although the present invention has been described in detail with reference to the above-described embodiments, those skilled in the art should understand that any person skilled in the art can modify or easily conceive of changes to the technical solutions described in the above-described embodiments within the technical scope disclosed by the present invention, or replace some of the technical features therein with equivalents. Such modifications, changes, or replacements do not deviate from the spirit and scope of the technical solutions of the embodiments of the present invention, and should be included in the scope of protection of the present invention. Therefore, the scope of protection of the present invention should be based on the scope of protection of the claims.
Claims
1. A primary side phase shift modulation control method, characterized in that: The method comprises: Adjusting the pulse width of the voltage and the phase difference between different voltages based on the phase shift angle between the switching tubes; wherein the voltages include: the primary resonant cavity input voltage and the secondary resonant cavity output voltage; If the primary resonant cavity input voltage has two working conditions of positive level and negative level within the target time length, the pulse width of the primary resonant cavity input voltage is adjusted to reduce the oscillation of the resonant current of the staggered parallel totem pole dual-source bridge circuit.
2. The method according to claim 1, characterized in that Applicable to an interleaved parallel totem pole type dual-source bridge circuit, wherein the primary side switching tubes of the interleaved parallel totem pole type dual-source bridge circuit include: switching tube S1, switching tube S2, switching tube S3 and switching tube S4; the secondary side switching tubes of the interleaved parallel totem pole type dual-source bridge circuit include: switching tube S5, switching tube S6, switching tube S7 and switching tube S8; The step of adjusting the pulse width of the voltage and the phase difference between different voltages based on the phase shift angle between the switching tubes includes: Adjusting the pulse width of the primary resonant cavity input voltage based on a first phase shift angle between the switch tube S1 and the switch tube S4; Adjusting the pulse width of the output voltage of the secondary resonant cavity based on a second phase shift angle between the switch tube S5 and the switch tube S8; The phase difference between the primary resonant cavity input voltage and the secondary resonant cavity output voltage is adjusted based on the phase shift angle between the primary and secondary bridges.
3. The method according to claim 2, characterized in that The method further includes: calculating the phase shift angle between the switch tube S5 and the switch tube S8 by the following formula: φss=π×Vcf / (n×Vdc(t)); Wherein, φss is the second phase shift angle, Vcf is the bus capacitance C of the staggered parallel totem pole dual-source bridge circuit. f voltage, n is the primary-to-secondary transformation ratio of the transformer of the staggered parallel totem pole type dual-source bridge circuit, Vdc is the DC output side voltage of the staggered parallel totem pole type dual-source bridge circuit, and Vdc is a function of time t.
4. The method according to claim 3, characterized in that The method further comprises: In one switching cycle, the pulse width of the output voltage of the secondary resonant cavity is in a zero-level state for the target duration; When the second phase shift angle meets the preset first condition, the primary resonant cavity input voltage exists in two operating conditions of positive level and negative level within the target time length, and the resonant current oscillates within the target time length; the first condition is: 2×φps+φss<π; where φps is the phase shift angle between the primary and secondary bridges.
5. The method according to claim 4, characterized in that After the step of ensuring that the pulse width of the secondary resonant cavity output voltage is in a zero-level state for a target duration within a switching cycle, the method further includes: When the second phase shift angle satisfies a preset second condition, the primary resonant cavity input voltage has only one operating condition of a positive level or a negative level within the target time length, and the resonant current does not oscillate within the target time length; the second condition is: 2×φps+φss≥π.
6. The method according to claim 4, characterized in that The step of adjusting the pulse width of the primary resonant cavity input voltage comprises: The pulse width of the primary resonant cavity input voltage is reduced so that the falling edge of the primary resonant cavity input voltage coincides with the falling edge of the secondary resonant cavity output voltage.
7. The method according to claim 6, characterized in that The method further comprises: The relationship between the first phase shift angle, the first phase shift angle and the primary-secondary bridge phase shift angle is determined by the following formula: φpp=π-(φss+2×φps); wherein φpp is the first phase shift angle.
8. The method according to claim 6, characterized in that The method further comprises: The reduced primary resonant cavity input voltage is determined by the following formula: Uab=(φss+2×φps) / π×Vcf; wherein Uab is the primary resonant cavity input voltage.
9. A primary side internal phase shift modulation control device, characterized in that: The device comprises: A voltage pulse width and phase difference adjustment module, used to adjust the voltage pulse width and the phase difference between different voltages based on the phase shift angle between the switching tubes; wherein the voltage includes: the primary resonant cavity input voltage and the secondary resonant cavity output voltage; The primary resonant cavity input voltage regulation module is used to adjust the pulse width of the primary resonant cavity input voltage if the primary resonant cavity input voltage exists in two working conditions of positive level and negative level within the target time length, so as to reduce the oscillation of the resonant current of the staggered parallel totem pole dual-source bridge circuit.
10. An electronic device, characterized in that: The invention comprises a processor and a memory, wherein the memory stores computer executable instructions that can be executed by the processor, and the processor executes the computer executable instructions to implement the primary side phase shift modulation control method according to any one of claims 1 to 8.